Structures and methods for integration by metal contact and fluid channel

Abstract

The invention relates to structures and methods for integration through metal contacts and fluid channels. The technical solution may provide for convective cooling of heat generating circuitry through fluid channels formed below the circuitry and alongside through substrate vias (TSVs). Multiple portions of a TSV may be etched vertically inside a surface of a first substrate, wherein each of the portions of the TSV may be spaced from other portions of the TSV by a set pitch. A plurality of fluid channels may be etched in the same first substrate, each of the plurality of fluid channels may be located between one or more of the portions of the TSVs. A second substrate including a set of mating portions of a TSV may be bonded to the surface of the first substrate to seal the plurality of fluid channels along the surface of the first substrate and complete TSV formation. The plurality of fluid channels may dissipate heat from the circuit in thermal contact with the first substrate.

Description

[0001] Cross-reference to related patent applications

[0002] This application claims the benefit of and priority to U.S. Provisional Application No. 63 / 514,860, filed on July 21, 2023, the entirety of which is incorporated herein by reference. Technical Field

[0003] The present disclosure generally relates to systems and methods for forming semiconductor devices, including but not limited to integrating semiconductor devices with metal contacts and fluid channels. Background Art

[0004] Semiconductor devices can be designed in a variety of ways and for a variety of applications. Semiconductor devices can generate heat, which, unless dissipated, can adversely affect the performance of these devices. Depending on the design, semiconductor devices can be integrated with other circuits or systems. Summary of the invention

[0005] Integrating circuits, such as semiconductor integrated circuits (ICs), into packages or systems can be challenging, particularly when dealing with high power density ICs that generate heat that may not be adequately dissipated by air cooling alone. Such heat generating circuits may be powered or connected to vertically oriented conductive contacts, sometimes referred to as through substrate vias or TSVs, that may be disposed beneath the circuits. Due to being disposed beneath the circuits, TSVs may occupy space in the material beneath the circuits, thereby obstructing or interfering with structures that may be used to efficiently dissipate heat from the circuits. The technical solutions disclosed herein overcome these challenges by implementing fluid channels that provide fluid convection cooling beneath the heat generating circuits, while facilitating the placement of TSVs alongside the channels for providing electrical connectivity to the circuits. For example, the technical solutions provide an improved and efficient heat transfer path for dissipating heat from a circuit to a fluid that moves via one or more channels or passages disposed parallel to the plane of the circuit, thereby providing efficient cooling to the circuits, while also reserving space for the TSVs to be orthogonally disposed alongside the fluid channels.

[0006] One aspect of the present technical solution relates to a system. The system may include a plurality of electrical contacts etched vertically relative to a surface of a first substrate. Each of the plurality of electrical contacts may be separated from each other of the plurality of electrical contacts. The system may include a plurality of fluid channels etched along the surface of the first substrate. Each of the plurality of fluid channels may be etched between one or more of the plurality of electrical contacts. The system may include a second substrate bonded to the surface of the first substrate to seal the plurality of fluid channels along the surface of the first substrate. The plurality of fluid channels may dissipate heat from a circuit in thermal contact with the first substrate.

[0007] The plurality of fluid channels may be sealed between at least the first substrate and the second substrate to facilitate fluid movement through the plurality of channels to convect the heat away from the circuit (e.g., dissipate via convection). The system may include a plurality of fins formed in the first substrate. Each of the plurality of fins may be separated from each other of the plurality of fins by a fluid channel in the plurality of fluid channels. Each respective fin of the plurality of fins may surround two or more of the plurality of electrical contacts. Each respective two or more electrical contacts of each respective fin may extend vertically along the height of each respective fin.

[0008] The system may include a device die including the circuit having an interconnect layer on a first surface of the device die. A second surface of the device die may be bonded to a second surface of the first substrate to conduct the heat from the circuit to a fluid moving through the plurality of fluid channels via the second surface of the device die and the second surface of the first substrate.

[0009] The system may include a second plurality of electrical contacts etched vertically relative to a surface of the second substrate. The surface of the second substrate may be joined to the surface of the first substrate to axially align and couple each of the second plurality of electrical contacts with at least one of the plurality of electrical contacts of the first substrate. The circuit may be configured to communicate a plurality of electrical signals via the plurality of electrical contacts and the second plurality of electrical contacts that are electrically continuous with the plurality of electrical contacts.

[0010] The system may include an inlet port for inputting a fluid into the plurality of fluid channels. The system may include an outlet port for outputting the fluid from the plurality of fluid channels. The system may include a device configured to move the fluid through the plurality of fluid channels and out of the outlet port via the inlet port. The fluid may be input via the inlet port at a first temperature and output via the outlet port at a second temperature higher than the first temperature.

[0011] The system can include a second plurality of fluid channels etched along a surface of the second substrate bonded to the first substrate. Each of the second plurality of fluid channels can be aligned with each respective fluid channel of the plurality of fluid channels to form a plurality of combined fluid channels.

[0012] Each combined channel of the plurality of combined fluid channels may include a cross-section whose height includes the sum of the height of the corresponding channel of the plurality of channels and the height of the corresponding channel of the second plurality of channels. The cross-section may have a width corresponding to a width of one of the corresponding channels of the plurality of channels or a width of the corresponding channel of the second plurality of channels.

[0013] Each of the second plurality of fluid channels can be etched between one or more of a second plurality of electrical contacts etched vertically relative to the surface of the second substrate. Each of the second plurality of electrical contacts can be aligned with a corresponding one of the plurality of electrical contacts of the first substrate.

[0014] One aspect of the technical solution relates to a method. The method may include etching a plurality of electrical contacts perpendicularly relative to a surface of a first substrate. Each of the plurality of electrical contacts may be spaced apart from each other of the plurality of electrical contacts. The method may include etching a plurality of fluid channels along the surface of the first substrate. Each of the plurality of fluid channels may be etched between one or more of the plurality of electrical contacts. The method may include bonding a second substrate to the surface of the first substrate to seal the plurality of fluid channels along the surface of the first substrate. The method may include providing thermal contact between an electrical circuit and the first substrate to facilitate the plurality of fluid channels to dissipate heat from the electrical circuit.

[0015] The method may include sealing the plurality of fluid channels between at least the first substrate and the second substrate to facilitate fluid movement through the plurality of channels to convect the heat away from the circuit (e.g., dissipate via convection). The method may include forming a plurality of fins in the first substrate. Each fin of the plurality of fins may be separated from each other fin of the plurality of fins by a fluid channel in the plurality of fluid channels. The method may include surrounding two or more of the plurality of electrical contacts by each fin of the plurality of fins. The respective two or more electrical contacts surrounded by each respective fin may extend vertically along the height of each respective fin.

[0016] The method may include bonding a second surface of a device die to a second surface of the first substrate. The bonding may be performed to conduct the heat from the circuit to a fluid moving through the plurality of fluid channels via the second surface of the device die and the second surface of the first substrate. The device die may include the circuit having an interconnect layer on a first surface of the device die.

[0017] The method may include vertically etching a second plurality of electrical contacts relative to a surface of the second substrate and axially aligning each of the second plurality of electrical contacts with at least one of the plurality of electrical contacts of the first substrate. The method may include joining the surface of the second substrate with the surface of the first substrate to couple each of the second plurality of electrical contacts with the at least one of the plurality of electrical contacts of the first substrate. The circuit may be configured to communicate a plurality of electrical signals via the plurality of electrical contacts and the second plurality of electrical contacts that are electrically continuous with the plurality of electrical contacts.

[0018] The method may include etching an inlet port to input a fluid into the plurality of fluid channels and etching an outlet port to output the fluid from the plurality of fluid channels. The method may include moving the fluid by a device through the inlet port, through the plurality of fluid channels, and out of the outlet port, the fluid being input through the inlet port at a first temperature and being output through the outlet port at a second temperature higher than the first temperature.

[0019] The method may include etching a second plurality of fluid channels along a surface of the second substrate to be bonded to the first substrate. The method may include aligning each of the second plurality of fluid channels with each corresponding fluid channel of the plurality of fluid channels to form a plurality of combined fluid channels. Each combined channel of the plurality of combined fluid channels may include a cross-section whose height includes the sum of the height of the corresponding channel of the plurality of channels and the height of the corresponding channel of the second plurality of channels. The cross-section may have a width corresponding to a width of one of the corresponding channels of the plurality of channels or a width of the corresponding channel of the second plurality of channels.

[0020] The method may include etching a second plurality of electrical contacts etched vertically relative to the surface of the second substrate. Each of the second plurality of electrical contacts may be aligned with a corresponding one of the plurality of electrical contacts of the first substrate. The method may include etching a second plurality of fluid channels along the surface of the second substrate to be bonded to the first substrate. Each of the second plurality of fluid channels may be etched between one or more of the second plurality of electrical contacts.

[0021] One aspect of the present technical solution relates to a device for cooling a circuit. The device may include a first semiconductor substrate having a first metal component extending from a first surface of the first semiconductor substrate toward an interior of the first semiconductor substrate. The first semiconductor substrate may include a channel etched into the first surface of the first semiconductor substrate and along the first surface of the first semiconductor substrate. The device may include a second semiconductor substrate having a second metal component extending from the first surface of the second semiconductor substrate toward an interior of the second semiconductor substrate. The device may include an interface along which the first surface of the first semiconductor substrate is bonded to the first surface of the second semiconductor substrate to seal a fluid inside the channel between the first semiconductor substrate and the second semiconductor substrate and to form a metal path from the first metal component coupled to the second metal component. The device may include a device die in thermal contact with the first semiconductor substrate via a second interface, the device die being bonded to the second surface of the first semiconductor substrate along the second interface to dissipate heat generated by a circuit in the device die to the fluid in the channel and electrically connect the metal path to the circuit.

[0022] The device may include a plurality of channels including the channel. The plurality of channels may be etched along the first surface of the first substrate. The device may include an inlet port to facilitate input of the fluid into the plurality of channels. The device may include an outlet port to facilitate output of the fluid from the plurality of channels. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] These and other aspects and features of the present embodiments will become apparent to those of ordinary skill in the art after reviewing the following description of specific embodiments in conjunction with the accompanying drawings.

[0024] Figure 1 is an example of a system including a device on a packaging substrate according to aspects of the present technical solution.

[0025] Figure 2 Various views illustrating example devices or structures having cooling fluid channels next to TSVs according to aspects of the present technical solution.

[0026] Figure 3 Additional views illustrating example devices or structures having convective cooling fluid channels next to TSVs using, for example, a stacked wafer arrangement in accordance with aspects of the present technology solution.

[0027] Figure 4 An example of a device or structure having inlet and outlet ports for a fluid channel for convective cooling according to aspects of the present technical solution is described.

[0028] Figure 5 is an example process flow for making or manufacturing an example device or structure including fluid channels next to TSVs according to aspects of the present technical solution.

[0029] Figure 6 is a continuation of an example process flow for making or manufacturing an example device or structure including fluid channels next to TSVs according to aspects of the present technical solution.

[0030] Figure 7 An example of a structure or an apparatus according to aspects of the present technical solution is described.

[0031] Figure 8 An example of a structure or an apparatus according to aspects of the present technical solution is described.

[0032] Fig. 9 is an example of a structure or device using a fluid moving device to move fluid through a convective cooling fluid channel according to aspects of the present technical solution.

[0033] Fig.10 An example flow chart illustrating a method for providing forced fluid convection cooling to a heat generating circuit via one or more channels disposed alongside a vertically oriented passageway. DETAILED DESCRIPTION

[0034] The present embodiment will now be described in detail with reference to the accompanying drawings, which are provided as illustrative examples of the embodiments to enable those skilled in the art to practice embodiments and alternatives that are obvious to those skilled in the art. The following figures and examples are not intended to limit the scope of the present embodiment to a single embodiment, but other embodiments are possible in a manner that interchanges some or all of the described or illustrated elements or elements that are obvious to those skilled in the art. Certain elements of the present embodiment may be implemented partially or completely using known components, that is, only those parts of such known components that are necessary to understand the present embodiment will be described, and detailed descriptions of other parts of such known components will be omitted to avoid blurring the present embodiment. The embodiments described in the illustrated context of the known components should not be limited thereto. For example, as will be apparent to those skilled in the art, unless otherwise specified herein, the embodiments described as being implemented in a semiconductor substrate should not be limited to this implementation, but they may be included in embodiments implemented in various types of substrates and other materials. In this specification, embodiments showing a single component should not be considered restrictive; on the contrary, the present disclosure is intended to cover other embodiments including multiple identical components, and vice versa, unless otherwise explicitly stated herein. Furthermore, applicant does not intend that any term in the specification or claims be assigned a rare or special meaning unless expressly so set forth.In addition, the present embodiments encompass current and future known equivalents of the known components mentioned herein by way of illustration.

[0035] Integrating heat generating circuits, such as semiconductor integrated circuits (ICs), into a package or system can be a challenge. When designing high power density ICs, it can be advantageous to use forced convection cooling to extract the heat generated by the IC, particularly in higher power ICs that tend to generate heat that cannot be adequately cooled by air alone. In addition, high power ICs may also receive their electrical signals (e.g., power supply lines or electrical signal lines) through conductive contacts that may be partially oriented vertically relative to the plane of the substrate of the IC. Such vertically oriented contacts may also be referred to as through substrate vias (TSVs) and may be routed through the material beneath the IC. Since the material beneath the IC may be used by a large number of TSVs, it may be difficult to provide a path for adequate heat dissipation and cooling of the IC through the same material. In such a configuration, it may be beneficial to simultaneously maximize heat transfer through the material beneath the IC while also promoting electrical connectivity with the IC.

[0036] The present technical solution provided herein overcomes these challenges by utilizing etching and substrate bonding techniques to provide fluid channels for forced convection cooling next to TSVs that can be formed in a vertical orientation to provide electrical connectivity to high power ICs. In doing so, the present technical solution can both improve the heat transfer coefficient of the fluid pumped through the fluid channels under the IC while facilitating or improving the density TSVs laid out to the IC in the same material under the IC. The present technical solution can utilize, for example, hybrid bonding (e.g., at the interface between different substrates (e.g., dies, wafers, interposers, or other material stacks) to form a parallel array of fluid channels (e.g., a parallel channel array network) of cooling fluid that surrounds and seals the inside of one or more channels.

[0037] Figure 1 An example device, structure, or system 100 of the present technology solution is illustrated, wherein a die or die stack 105 may be provided in a die stack structure 110 supported on a cold plate 215, which may be mounted on a packaging substrate 115. The example system 100 may include a packaging substrate 115 coupled to and in thermal or physical contact with the cold plate 215. Thermal and / or physical contact may be formed between the die 105 and an interposer 120. The cold plate 215 may include one or more substrates, interposers, or dies that may form the die stack structure 110 along with the die 105, which may include a circuit 210 that generates heat. The die structure 110 may include any number of layers formed by any combination of substrates, interposers, and dies. Through metal contacts or vias (e.g., TSVs) and one or more channels (e.g., fluid channels) for conducting fluid to provide convective cooling to the circuits 210 in the die 105 may be integrated in the material between at least a portion of the die 105 and at least a portion of the cold plate 215. The present technology solution may include a package substrate 115 on which any number of heat generating circuits or devices (e.g., die 105) are supported.

[0038] The die 105 may include any semiconductor component including an electronic circuit 210 (e.g., an integrated circuit) that can be fabricated on or within a piece of semiconductor material. The die 105 may include any substrate material, such as a semiconductor substrate, including, for example, a silicon substrate, a gallium arsenide substrate, a silicon carbide substrate, a gallium nitride substrate, or any other substrate for circuit fabrication. The die 105 may include, for example, any one or more circuits implemented in or on or within a substrate, such as a processor, a controller, a power supply, an analog and / or digital circuit with any combination of logic gates and active or passive electronic components (e.g., resistors, capacitors, inductors), a circuit for performing arithmetic functions, a memory cell, a flip-flop and latch circuit, or a clock circuit system for a processing unit or system. The die 105 may include a single physical portion of a semiconductor substrate that has been processed to include one or more circuits and is configured for connection to contact lines (e.g., via pads or vias) and interfacing with other devices, components, or systems.

[0039] The cold plate 215 may include an interposer 120 or a die having a material (e.g., a substrate) inside which high density electrical connections and signal routing between circuits (e.g., ICs) or semiconductor die may be formed within a single package. The interposer of the cold plate 215 may include, for example, a silicon interposer, such as a thin layer of silicon material with a network of interconnects or any other semiconductor substrate material. The interposer may include, for example, a semiconductor interposer for 2.5D or 3D integration, which may be configured or used to stack multiple dies 105 on top of each other (e.g., to form a die stacking structure 110). 2.5D integration may include placing multiple integrated circuits on an interposer or substrate and may utilize through silicon vias (TSVs) for vertical electrical connections. 2.5D integration may use an underlying structure that is assembled, such as having multiple circuits side-by-side together on a common substrate. 3D integration may include a structure in which multiple integrated circuits 210 are stacked on top of each other, such as processors, memories, logic, or sensors. The cold plate 215 may include any or all of the functionality of the interposer 120. Once assembled, the cold plate 215 may include fluid channels. The cold plate 215 may interconnect multiple circuit elements (eg, memory, logic, and sensors).

[0040] The interposer, substrate, or die of the cold plate 215 may include, for example, one or more metal contacts and channels integrated therein. The cold plate 215 may include one or more substrates or dies mounted, coupled, integrated, or formed on top of each other, thereby forming the die stacking structure 110. Any of the substrates, interposers, or dies 105 in the die stacking structure 110 may include metal contacts and channels (e.g., channels that may be integrated therein, such as on top of any die 105, below any die 105, or in between any of the dies 105 (e.g., to cool their corresponding ICs) Figure 2). The present technical solution may be applicable to the system 100 or any part thereof, such as under or over any top die 105, any bottom die 105, or within any layer of the die stack structure 110, including any material in between the die 105, such as one or more interposers 120.

[0041] Figure 2 An example device, system, or structure 200 is provided for integration via metal contacts for electrical connectivity and fluid channels for thermal management. Example 200 illustrates features of device or system 200 using cross-sectional view 202, view across BB cross section (e.g., plan view) 204, and view across AA cross section 206. System or structure 200 may include multiple substrates joined together to provide cooling of a circuit or device via fluid channels while also facilitating metal vias routed underneath the circuit or device and including at least a portion that is vertically oriented (e.g., perpendicular) relative to the plane of die 105 or device layer 205.

[0042] View 202 illustrates a cross-sectional view of a structure or device 200 having a device layer 205 having one or more circuits 210 in a die 105, which is mounted, attached, bonded, or otherwise coupled on top of a cold plate 215 via a bonding interface 220. Substrate (e.g., wafer) bonding may include any precise and permanent attachment of two or more substrates (e.g., semiconductor wafers) to form a single integrated structure (e.g., structure 200 or die stack structure 110). Substrate bonding or substrate surface bonding may not necessarily include surfaces directly bonding to each other (e.g., placing them in direct physical and / or thermal contact). Instead, substrate or material bonding may occur through intervening layers, materials.

[0043] The cold plate 215 may be formed of a first substrate 260 bonded to a second substrate via another bonding interface 220. The first substrate 260 and the second substrate 265 may include through substrate vias (TSVs) 245 that may be run vertically or perpendicularly relative to the plane of the die 105 or the substrates 260 and 265. The first substrate 260 between the die 105 on top and the second substrate 260 below may include one or more fluid channels 250 through which a fluid 255 may move or propagate in order to provide fluid-based convection cooling to the circuit 210. The first bonding interface 220 (e.g., between the die 105 and the first substrate 260) and the second bonding interface 220 (e.g., between the first substrate 260 and the second substrate 265) may be represented or described using BB cross-sectional lines, according to which the view 204 is presented.

[0044] The die 105 (which may also be referred to as the device die 105) may include a device layer 205, which may include any number of circuits 210. The device layer 205 (which may also be referred to as an interconnect layer) may include a layer of the die 105 (e.g., a semiconductor substrate) in which an integrated circuit (e.g., 210) may be formed. The device layer 205 may include a layer of the die 105 that represents a plane in which the circuit(s) 210 are implemented or disposed (e.g., on top of a top surface of the die). The device layer 205 may be on the top surface of the die 105, below or within the die 105 (e.g., within a substrate of the die), at the bottom surface of the die 105, or in any combination of materials between the top surface, the bottom surface, or the top and bottom surfaces of the die 105.

[0045] Circuit 210 may include any combination of interconnected electronic components or conductive and semiconductive materials or features configured to perform a specific electrical function. Circuit 210 may include any combination of electrical or electronic components, features for creating, processing, controlling, regulating, receiving, or transmitting electrical signals. Circuit 210 may include digital logic circuits, analog circuits, microprocessor circuits, radio frequency (RF) circuits, power management circuits, sensor circuits, memory circuitry, or any other circuitry implemented in die 105. Circuit 210 may generate heat during its operation, which, unless dissipated, for example, via fluid channels 250 in cold plate 215, may adversely affect the operation of circuit 210 or any other adjacent circuitry.

[0046] The fluid channel 250 (also referred to as the channel 250) may include any pathway or conduit designed to allow a fluid (e.g., a liquid or a gas) to flow to provide cooling. The fluid channel 250 may include a groove etched in a substrate (e.g., a first substrate 260) via wafer bonding (e.g., along the bonding interface 220), which is sealed by another substrate (e.g., a second substrate 260). Etching may include any selective removal of material from the surface of a substrate, such as by using a dry or wet etching process to create a pattern (e.g., holes for TSVs, trench lines for channels, or any other shape or feature) by removing material from the surface of the substrate. The fluid channel 250 may enclose a fluid 255 (e.g., a liquid or a gas) on all sides, providing only an inlet and an outlet through which the fluid 255 may be moved, forced, pressed, or pushed to flow through the fluid channel 250. The fluid channel 250 may be configured to facilitate or provide cooling underneath the die 105 or its circuitry 210. Channels 250 may be arranged in a parallel array, oriented in a plane parallel to the plane of die 105 , allowing for a multi-channel cooling system beneath die 105 .

[0047] The cooling fins 240 may be formed as a two-dimensional array of fins and struts to facilitate fluid flow and heat transfer. The dimensions of these fins may be the same or different on different axes and they may be irregularly shaped as desired. The channels 250 may also be arranged to form a channel (e.g., a single flow path) under the die (e.g., a serpentine path), forming, for example, a zigzag pattern with one or more turns or changes in direction to span or cover an area under the circuit. The channels 250 may also be arranged to effectively flow through the entire area of ​​the die or only a portion thereof. The channels 250 may contain any combination of topological structures, such as one or more channels 250 having any type of shape or route (including straight lines, curvatures, the same or different widths, heights, or lengths).

[0048] The channels 250 may be etched or machined into the substrate 260 and / or the substrate 265. The channels 250 may be configured or designed to form a network of channels through which a cooling fluid 255 (e.g., a liquid coolant or a gas) may flow. The channel network may include a single channel 250, a plurality of parallel channels 250, an array or grid of channels 250, a single serpentine, winding, or curvilinear (e.g., curved, zigzag, or s-shaped) channel having straight channel segments and curved channel portions to cover or span an area or volume, or any arrangement, shape, or orientation beneath the die 105.

[0049] In some examples, the serpentine (e.g., single) channel may or may not form a fin. In some instances, the design may include an array of fins. For example, the design may include a single row of fins. The design may include an array of fins that may not be orthogonal relative to the TSVs. For example, the design may include one or more staggered 2-D fin arrays that are offset and may have a hexagonal or non-periodic lattice, or be uniquely spaced.

[0050] When the circuit 210 in the die 105 generates heat during operation, a cooling fluid 255 may be circulated through the channel 250. Since its initial temperature is lower than the temperature of the surrounding materials (e.g., substrates 260 and / or 265), the fluid 255 may absorb heat as it passes under the die 105. Heat may be transported away from the die 105 via the fluid heated in the process and removed from the structure 200. The fluid channel 250 may include a path of any shape, such as a straight or curved channel, a rectangular or circular channel; the cross-section may also have any shape, such as a square, rectangular, trapezoidal, hexagonal, circular, elliptical, or any other shape of the cross-section of the interior of the channel 250. If the etched channel walls extend into more than one substrate, some alignment offset across the bonding interface may be tolerated as long as it does not affect the fluid flow.

[0051] Fluid 255 may include any fluid, such as a gas or liquid, used to cool structure 200 or its components and features. Fluid 255 may include water or air, a fluorocarbon liquid, an oil (such as mineral oil), or a refrigerant. Gases may be under pressure, but the pressure is not so high as to cause mechanical failure. Since fluid 255 may be pumped, pushed, or moved through one or more channels 250 via a fluid moving device (e.g., a cooling pump or fan device), fluid 255 may be replenished in channels 250.

[0052] Through substrate vias (TSVs) 245 (also referred to as vias 245) may include any conductive material, electrical contact, or conductive path inside one or more semiconductor substrates. TSVs 245 may be one or more (e.g., interconnect) electrical contacts that provide a path for electrical signals routed under and coupled to die 105. TSVs 245 may include a metal material deposited or filled inside a hole or through hole of one or more substrates (e.g., 105, 120, 260, or 265) to provide a conductive path. Vias 245 may be oriented or arranged in a vertical direction relative to die 105 and / or substrates 260 or 265. TSVs 245 may be formed by etching vertically oriented (e.g., downward) holes or cavities in first substrate 260 and second substrate 265 and filling each of the holes or cavities with a conductive material (e.g., copper, nickel, or tungsten, or any other electrical conductor).

[0053] TSV 245 can be formed by combining a first portion of a TSV from a first substrate 260 with a second portion of a TSV from a second substrate 265. The two portions of the TSV from the two substrates can be aligned (e.g., coaxially and end-to-end) to connect them to each other using substrate bonding. For example, the two substrates can be bonded using one or more zero-gap bonding techniques (e.g., zero-gap hybrid bonding), in which two surfaces or substrates are joined together at a minimum gap or spacing, such as where any spacing or gap is limited to the nanometer scale or atomic (e.g., sub-nanometer) scale. Zero-gap bonding can connect two or more materials, some of which include one or more electrical conductors and / or one or more electrical insulators. For example, zero-gap bonding can be used to contact or bond an insulator material and a conductor material. The conductor can be made of more than one material (including, for example, a conductive barrier). The insulator can also be composed of multiple insulating material layers.

[0054] The TSVs may be directly connected to each other, or one or more of them may have metal bonding pads formed over them using zero-gap bonding structures and methods. Thus, TSV 245 may include a first portion of a via routed through first substrate 260 and a second portion of a via routed through second substrate 260. The two portions of TSV 245 may be coaxially aligned with each other to form a single straight via (e.g., a metal column or row) that is seamlessly connected to each other by alignment and / or melting or bonding. TSV 245 may be formed using multiple parts or portions that may be axially aligned (e.g., co-linear, oriented in the same line or direction, and end-to-end in contact), or may be misaligned but electrically coupled, connected, or bridged using metal pads or horizontal metal contacts or lines. For example, the axial alignment may be off-center while also being sufficient to form an electrical connection to conduct electrical signals.

[0055] The cooling fins 240 may include any protrusions, ribs, protrusions, surface roughness, or extended structures for dissipating heat by increasing the surface area exposed to the cooling fluid to promote heat transfer. The cooling fins 240 may include any heat dissipation structure designed or used to improve heat transfer from itself to the cooling medium (e.g., cooling fluid). The cooling fins 240 may include any combination of substrate materials, such as the first substrate 260 or the second substrate 265. Each of the substrates 260 or 265 may include a semiconductor substrate (e.g., silicon, gallium arsenide, silicon carbide), glass, or ceramic. The cooling fins 240 may include TSVs 245. The cooling fins 240 may include protruding structures exposed to the cooling fluid 255 or in physical or thermal contact with the cooling fluid 255 along one or more sides of the fins.

[0056] Thermal contact may include any connection, path, or interface between two materials or objects that facilitates heat transfer, whether in direct physical contact or through an intervening thermally insulating structure or medium. For example, thermal contact may or may not include direct thermal contact or physical contact. For example, thermal contact may include an intervening layer or barrier of a film of thermally insulating material through which heat can still be conducted or dissipated.

[0057] For example, the cooling fin 240 may include a protrusion or projection of the substrate 260 or 265 that is surrounded by the fluid 255 flowing in the one or more channels 250 on one or more adjacent or opposite sides thereof. The cooling fin 240 may include a surface area that is in physical or thermal contact with the fluid 255 in the one or more channels 250. The cooling fin 240 may include a substrate material having a high thermal conductivity (e.g., between about 50 W / m*K and 400 W / m*K, or greater than 400 W / m*K) that promotes improved heat transfer. The cooling fin 240 may include one or more TSVs 245 that are vertically arranged through the substrate material (e.g., along the height of the cooling fin) and act as conduits for efficiently transferring heat from the electronic components to the substrate. The cooling fin 240 may include one or more passages that may extend through the fin, or be embedded, perforated, or passed through by the one or more passages. For example, the cooling fin 240 may include a plurality of TSVs 245 that pass through or extend through the cooling fin 240, extending along the height of the TSVs 245. The TSVs 245 may include a thermally conductive material and facilitate heat dissipation from the cooling fin 240 to the fluid 255.

[0058] The bonding interface 220 may be used to attach, connect, link, couple, or bond the die 105 (e.g., device layer 205 or integrated circuit 210) to a substrate (e.g., 260 or 265) in which the cooling fins 240 and fluid channels 250 may be formed. The bonding interface 220 may be created via wafer bonding of a substrate (e.g., die 105 or substrate 260 or 265), such as, for example, permanently attaching two semiconductor wafers together into a single integrated structure. The bonding interface 220 may be implemented at the atomic or molecular level, such as using direct bonding, adhesive bonding, or fusion bonding. The structure 200 may be formed by wafer bonding the die 105 to one surface of a first substrate 260 and wafer bonding the second substrate 265 to another surface of the first substrate 260 to form a cold plate 215 having a first substrate 260 and a second substrate 265 for the die 105 and its circuit 210. The bonding interface 220 may be formed using any number of techniques. For example, the bonding interface 220 can be implemented using surface activation that uses an oxide layer on one or more surfaces to promote bonding. The bonding interface 220 can be implemented using direct bonding.

[0059] While view 202 shows an example where the surface of the die 105 with the device layer 205 is turned away from the cold plate 215, it should be understood that the die 105 may be oriented face-up or face-down relative to the cold plate 215, depending on the design. For example, the die 105 may have the surface of the device layer 205 and circuit 210 turned toward and engaged with the cold plate 215. In this configuration, the channel 250 may be placed closer to the circuit 210, thereby reducing the thermal resistance between the circuit 210 and the channel 250. For example, the die 105 may have the surface of the device layer 205 and the surface 210 turned away from the cold plate 215 and the opposite side of the die 105 engaged with the cold plate 215. In this configuration, the back plate of the die 105 may be in closer thermal contact with the channel 250 than the device layer 205.

[0060] Figure 2 View 204 provides a view across the BB cross-sectional line from view 202. View 204 may correspond to a top view of the device, system, or structure 200 showing a planar arrangement of parallel arrays of channels and TSVs 245 arranged in rows or columns within the cooling fins 240 and passing through the cooling fins 240 along the height of the cooling fins 240.

[0061] As illustrated in view 204, the present technical solution facilitates arranging or providing TSVs 245 beside the cooling fins 240 (e.g., in the middle of the cooling fins 240). Any number of TSVs 245 may be provided or arranged on both sides (e.g., left or right) of each channel 250 or in the middle of any two channels 250, and the TSVs 245 may be oriented or arranged in a direction orthogonal or perpendicular to the plane along which the fluid channels 250 are provided.

[0062] View 204 illustrates a network or structure of fluid channels 250 having one or more inlet ports 225 and outlet ports 230. The inlet ports and outlet ports may provide passages for fluid 255 to enter or exit the fluid channels 250. For example, the inlet ports 225 may be provided on one end of the one or more channels 250, while the outlet ports 230 may be provided on the other end (e.g., the opposite end or path) of the one or more channels 250. The inlet ports 225 or outlet ports 230 may be arranged, formed by etching or drilling, and may include openings or cross-sections that are circular, rectangular, elongated, or any other shape.

[0063] View 206 provides a cross-sectional access along line AA shown in view 204, showing a cross section along a row (e.g., across multiple columns of TSVs 245). View 206 provides a different view of the cooling fins 240 having TSVs 245 running vertically through the cooling fins 240 and along the height of the cooling fins 240. Each TSV 245 may be separated from the channel 250 by a layer or sheet of substrate material (e.g., substrate 260 or 265) forming the cooling fins 240.

[0064] The present technical solution may use a hybrid bonding surface to connect multiple wafers together and align and form TSVs 245 and channels 250, such as by coaxially aligning different parts or sections of TSVs 245 (e.g., from different substrates) and making electrical contact with the different parts or sections. The present technical solution may also align and bring together (e.g., seal) fluid channels 250 between two or more different substrates. The system 200 may use cooling fins 240 or other features (e.g., between channels 250) to allow one or more TSVs 245 to pass through the layers of channels 250, lay out or place one or more TSVs 245 through the layers of channels 250 (e.g., in the middle of individual channels 250). The present technical solution may use a hybrid bonding surface to connect different wafer substrates together, and TSVs 245 may be formed, etched or drilled through cooling fins (e.g., fin structures) to promote more efficient heat dissipation and cooling.

[0065] The present technology solution may include or utilize any zero-gap bonding that allows electrical connection of through-substrate vias. For example, fusion bonding or hybrid copper bonding techniques may be used to bond, couple, or connect portions of metal vias into TSVs 245. For example, one or more TSVs 245 extending orthogonally through a portion of a cold plate 215 that includes fluid channels 250 (e.g., a planar array of fluid channels 250) may provide a die-side connection to circuitry 210 at device layer 205. Examples of contacts on the circuitry 210 side may include other TSVs 245 and copper bonding / landing pads to which TSVs 245 from the cold plate 215 may connect or electrically couple.

[0066] In the cold plate 215, the wafers (e.g., substrates 260 and 265) may be bonded so that the TSVs 245 may make contact with other TSVs, or may be connected to other conductive structures, such as landing pads or fan-out layers. For example, a pad or other structure may be used as a conductive interface to connect two offset TSVs 245. The cold plate 215 may be made of silicon or any material (e.g., glass, ceramic, or electrical insulator) or structure that allows the TSVs 245 to be electrically isolated from each other. The material used for the TSVs 245 may have a high thermal conductivity (e.g., a metal such as copper, tungsten, nickel). If low thermal conductivity materials remain sufficiently thermally conductive and if heat transfer can occur across them, such structures may be used as thin insulating layers (e.g., 20 nm film thickness).

[0067] Figure 3 Various examples of structures, devices, or systems that include additional design features or variations are described, such as system, device, or structure 200. Figure 2 Example 200 in Example 300 may include a fluid channel 250 built in a stacked substrate to facilitate the flow of a fluid 255. Example 300 may be illustrated using cross-sectional views 302, 304, and 306. While Example 300 illustrates a dual wafer substrate design with a single bonding interface, the present technical solution allows for more complex flow paths to be constructed by stacking any number of additional wafers or materials on top of each other.

[0068] View 302 illustrates a cross-sectional view of a bonded first substrate 260 and a second substrate 265 (e.g., in a cold plate 215) having TSVs 245 and fluid channels 250, wherein one of the TSVs 245 includes an electrical lead that enables a lateral shift or spatial offset between two portions of the TSV 245. As shown, for example, in the right TSV 245, a first portion of the TSV 245 in the first substrate 260 may be offset laterally (e.g., to the left) from a second portion of the TSV 245 in the second substrate 265. To provide an electrical connection between the two portions of the TSV 245, a TSV pad 305 (e.g., a landing pad) may be provided. The TSV pad 305 may include a flat area (e.g., a pad) made of a conductive material or trace (e.g., copper) that may be used to provide electrical continuity between a first portion of the TSV 245 (e.g., in the first substrate 260) and a second portion of the TSV 245 (e.g., in the second substrate 265). TSV connector 305 may include any shape or size to facilitate connection between portions of TSV 245. For example, TSV pad 305 may include a length corresponding to a portion of fluid channel 250 that TSV 245 avoids by shifting a portion thereof to one side, thereby facilitating electrical contact (e.g., by providing a metal via) while also not interrupting fluid channel 250 along which TSV 245 passes.

[0069] As shown in cross-sectional view 304, die 105 may be oriented face-down so that electrical input or output pads of circuit 210 are exposed to TSVs 245 of device layer 205 from first substrate 260 below die 105 upward toward die 105. Device layer 205 may have any number of electrical input or output pads that may be axially aligned with TSVs 245 and bonded to their corresponding TSVs 245 via bonding pads 310. Bonding pads 310 may include any conductive features or surfaces corresponding to input or output signals or power lines of circuit 210 to be connected by TSVs 245. In some embodiments, bonding pads 310 may be formed on the surface bonded at bonding interface 220 to facilitate improved electrical contact between portions of the TSVs being formed. TSVs 245 of cold plate 215 may make contact with bonding pads 310 on device die and be connected using, for example, copper bonding. In this configuration, cold plate 215 may be placed as close to die 105 as possible (e.g., in close physical contact).

[0070] The signal density of the TSVs 245 may be based on or related to the diameter of the TSVs 245 and the process integration practices for TSV placement as used in the field. For example, the TSVs 245 may have a diameter between 1um and 50um, such as a 10um diameter. The TSVs 245 may be distributed along the cooling fins 240 at a pitch between 10um and 1000um. For example, given an example metal density specification, a 5um diameter TSV 245 may have a 45um pitch, which may be centered along the cooling fins 240. In some aspects, the cooling fins 240 may include multiple columns of TSVs 245 of any size (e.g., diameter) and distributed according to any pitch. As TSV integration specifications evolve to allow for smaller pitches, those new specifications may be used.

[0071] The channel 250 may be constructed to have any height or width. For example, the height of the fluid channel 250 may be between 10um and 1000um, such as 300um. For example, the TSV 245 may be designed such that its diameter is approximately 9 to 14 times smaller than its height, such as having an aspect ratio between 8:1 and 15:1. The channel 250 may have a cross-section that may be sized and shaped to minimize fluid impedance and cold plate pressure drop. For example, the width of the channel 250 (e.g., the size parallel to the plane of the die 105 or the bonding interface 220) may be between 10um and 5000um, such as on the order of 50um and 200um.

[0072] The cooling fins 240 may have a width that may be designed to be wide enough to accommodate the TSVs 245 (e.g., to provide a bonding surface), but also narrow enough to maximize the number of fins packed into a device or to maximize the cross-section of the channel 250 and the flow rate of the fluid 255. For example, if the TSVs are designed to be 10um in diameter, the cooling fins 240 may have a width between 50um and 100um. The arrangement, shape, and distribution of the cooling fins 240 may be such that they maximize the passing area of ​​the TSVs 245 and maximize fluid conductivity. High conduction flow (e.g., fluid flux) and high TSV density may be mutually optimized. For example, for higher heat transfer characteristics, the surface area of ​​the channel 250 and the flow rate of the fluid 255 may be larger, thereby limiting the area or number of the TSVs 245. For example, when the number of TSVs 245 is large, the cross-section of the channel 250 and the flux of the fluid 255 may be reduced, thereby allowing a larger area of ​​the TSVs 245.

[0073] As shown in cross-sectional view 306, when the channel cross section is a limiting factor (e.g., a larger fluid flux is desired), the surface area of ​​the fluid channel 250 can be increased by combining channels from two substrates. For example, the channel height can be increased by etching channels into the first substrate 260 and the second substrate 265 and then aligning the etched portions of the channel 250 to form a channel with doubled height (e.g., combined channel 315). The combined channel 315 can include a channel formed by two channels 250 of the same size and shape (e.g., mirror images of each other). Such two channels on the two surfaces of the substrates 260 and 265 can be formed into a single combined channel 315 by joining the two etched sides of the two substrates so that the two portions of the combined channel 315 are aligned.

[0074] The present technical solution can create a combined channel 315 with a larger cross section by thickening the wafer substrate or etching the channel deeper. The present technical solution can use multiple (e.g., three or more) wafer substrates to be bonded together and etched through the intermediate wafer to produce a combined fluid channel 315 with a larger cross section. For example, the combined channel 315 may include one or more intermediate substrates that are completely drilled through or etched through to be placed between the top substrate and the bottom substrate to provide the bottom inner surface and the top inner surface of the channel. These stacking solutions can also be used to reduce the TSV pitch by reducing the diameter of the TSV used for connection. Since the channel thickness surrounding the intermediate substrate can be smaller, the TSV may not have to be as deep. Therefore, for a given aspect ratio, the TSV diameter can be reduced and therefore the minimum pitch can also be reduced.

[0075] Figure 44 is an example system, device or structure 400 having inlet and outlet ports shown from a plan view 402 perspective showing a cross-sectional line BB and from a cross-sectional view 404 across the line BB. The device or structure 400 may include any functionality or features of the example structures 200 and 300 and vice versa. The example structure 400 may include a plurality of fluid channels 250 for passing a fluid 255 and providing convective cooling.

[0076] like Figure 4 As shown in the plan view 402 of FIG. 404 , one or more inlet ports 225 and one or more outlet ports 230 may be created, formed or provided. The present technical solution may be part of a system including any number of inlet ports 225 and outlet ports 230. As shown in views 402 and 404 , cross section BB shows the configuration of the inlet ports 225 and outlet ports 230 for the fluid.

[0077] As shown in 404, the configuration may include etching, positioning or placing the inlet port 225 and the outlet port 230 from the bottom or top wafer or both. For example, the inlet and outlet ports 225 and 230 may be etched from the surface of the first substrate 260 bonded to the die 105 (e.g., on either side of the die 105) downward toward the channel 250. Cross-section BB from views 402 and 404 shows the ports in the first substrate 260, but the inlet and outlet ports 225 and 230 may be provided in or through the second substrate 265 or any combination of the first and second substrates 260 and 265. In some designs, more than two ports may be used.

[0078] In one aspect, the present technical solution relates to a system, device, or structure including any combination of the features described in Examples 100 to 400. The system, device, or structure may include one or more electrical contacts (e.g., TSVs 245) that may be etched vertically relative to a surface of a first substrate 260. Each of the plurality of electrical contacts (e.g., TSVs 245) may be separated from each other of the plurality of electrical contacts (e.g., TSVs 245). The system, device, or structure may include a plurality of fluid channels 250 etched along the surface of the first substrate 260. Each of the plurality of fluid channels 250 may be etched between one or more of the plurality of electrical contacts (e.g., TSVs 245). The system, device, or structure may include a second substrate 265 that may be bonded to the surface of the first substrate 260 to seal one or more (e.g., multiple) fluid channels 250, which may be formed or etched along the surface of the first substrate 260 (e.g., next to the cooling fins 240 formed by the substrates 260 and / or 265). The one or more fluid channels 250 may dissipate heat generated by the circuit 210 using a cooling fluid 255 moving within the channel 250 , where the heat may be conducted to the one or more channels 250 via a thermal path provided by the die 105 and the thermally conductive materials of the substrates 260 and 265 .

[0079] One or more (e.g., multiple) fluid channels 250 may be sealed between at least the first substrate 260 and the second substrate 265 to facilitate movement of the fluid 255 through the one or more channels 250 in order to transfer heat away from the circuit 210. For example, the fluid 255 moving through the channels 250 may be at a first temperature (e.g., 5 or 20 degrees Celsius) that is lower than the temperature of the circuit 210 (e.g., 100 degrees Celsius). Heat from the circuit 210 may be conducted away from the circuit 210 through the materials of the die 105 and / or substrates 260 / 265 and through any bonding interface 220 to be conducted to the cooling channels 240 and then transferred to the fluid 255 moving through the one or more channels 250.

[0080] The system, device, or structure may include a plurality of cooling fins 240 that may be formed in a first substrate 260. Each of the plurality of cooling fins 240 may be separated from each other of the plurality of cooling fins 240 by one or more of the plurality of fluid channels 250. Each respective fin 240 of the plurality of fins may include, surround, or enclose one or more of the plurality of electrical contacts (e.g., 245). One or more electrical contacts (e.g., TSVs 245) may extend vertically along the height of each respective fin 240. For example, the plurality of TSVs 245 may be spaced apart from each other along the length of the cooling fins 240 at a set separation distance (e.g., every 10um, 20um, 50um, 70um, or 100um, 200um, or 300um).

[0081] The system, device, or structure may include a device die 105 including a circuit 210 having an interconnect layer on a first surface of the device die 105. The interconnect layer may include any combination of metal contacts or vias for the circuit 210. The second surface of the device die 105 may be bonded to the second surface of the first substrate 260 to conduct heat from the circuit 210 through the second surface of the device die 105 and the second surface of the first substrate 260. For example, a second plurality of electrical contacts (e.g., TSVs 245) may be etched vertically relative to the surface of the second substrate 265. The surface of the second substrate 265 may be bonded to the surface of the first substrate 260 to axially align and couple each of the second plurality of electrical contacts (e.g., 245) with at least one of the plurality of electrical contacts (e.g., 245) of the first substrate. For example, each individual of the TSVs 245 of the first substrate 260 may be coupled with each individual TSV 245 of the second substrate. The circuit 210 can be configured to communicate a plurality of electrical signals through a plurality of electrical contacts (eg, 245 ) and a second plurality of electrical contacts (eg, 245 ) that are electrically continuous with the plurality of electrical contacts (eg, 245 ).

[0082] The system, device, or structure may include an inlet port 225 to input a fluid 255 into the plurality of fluid channels 250 and an outlet port 230 to output the fluid 255 from the plurality of fluid channels 250. The system or structure may include a device (e.g., FMD 910) that may be configured to move, push, or force the fluid 255 through the plurality of fluid channels 250 and out of the outlet port 230 via the inlet port 225. The fluid 255 may be input to the channels 250 via the inlet port 225 at a first temperature (e.g., at 10° C., which may be a temperature below a temperature threshold, such as 20° C.). The fluid 255 may be output via the outlet port 230 at a second temperature (e.g., 70° C.), which may be higher than the first temperature and higher than a second temperature threshold (e.g., 50° C.), wherein the second temperature threshold is higher than the first temperature threshold to facilitate heat transfer from the circuit 210 to the fluid 255.

[0083] The system, device, or structure may include a second plurality of fluid channels 250 that may be etched along a surface of a second substrate 265. The second substrate 265 may be bonded to the first substrate 260. The second substrate 265 may have its second plurality of fluid channels 250 aligned with (e.g., mirrored with) the plurality of channels 250 etched in the first substrate 260. For example, each of the second plurality of fluid channels 250 in the second substrate 265 may be aligned with each respective fluid channel 250 in the plurality of fluid channels 250 in the first substrate 260 to form a plurality of combined fluid channels (e.g., 315). For example, each combined channel 315 in the plurality of combined channels 315 may include a height having a height of a respective channel 250 from the first plurality of channels 250 and a respective height of a respective channel 250 from the second plurality of channels 250.

[0084] For example, each combined channel 315 in the plurality of combined fluid channels 315 may include a cross-section whose height includes the sum of the height of a corresponding channel 250 in the plurality of channels (e.g., in the first substrate 260) and the height of a corresponding channel 250 in the second plurality of channels (e.g., in the second substrate 265). The cross-section may have a width corresponding to the width of one of the corresponding channels 250 in the plurality of channels 250 or the width of the corresponding channel 250 in the second plurality of channels 250.

[0085] Each of the second plurality of fluid channels 250 may be etched between one or more of the second plurality of electrical contacts (e.g., portions of TSVs 245 or TSVs 510) that may be etched vertically relative to the surface of the second substrate 265. Each of the second plurality of electrical contacts (e.g., portions of TSVs 245 or TSVs 510) may be aligned with a corresponding one of the plurality of electrical contacts (e.g., portions of TSVs 245 or TSVs 510) of the first substrate 260.

[0086] Figure 5 An example 500 of a method or process flow for manufacturing or forming a device, system, or structure, such as example devices, systems, or structures 100-400, is illustrated. The process flow may include forming or manufacturing fluid channels 250 for passing fluid to convectively cool circuit 210 alongside TSVs 245, which may be formed to facilitate electrical connectivity with circuit 210. Example manufacturing flow 500 may be shown using cross-sectional views 502, 504, 506, and 508.

[0087] At view 502, the manufacturing process may include one or more manufacturing tasks including depositing a silicon-based dielectric, and patterning and etching a TSV hole 505 to form a portion of a TSV 510 inside the first substrate 260. The portion of the TSV 510 may include a portion of a TSV 245 that is later connected or combined with other portions of the TSV 510 (e.g., via wafer bonding and / or metal bonding techniques) to form a complete or full TSV 245. For example, a mask may be used to expose the surface of the substrate and one or more TSV holes 505 may be etched into the substrate. The TSV hole 505 may include any hole (e.g., elongated, shaped as a post or cylinder, and oriented vertically relative to the top surface) used to form a portion of the TSV 245 therein. The TSV hole 505 may include a hole etched into the substrate 260 to have an aspect ratio of width to diameter between 8:1 and 15:1 (e.g., 10:1). The TSV hole 505 may be etched into the first substrate 260 according to a pattern. The result may include etched TSV holes inside the material of the first substrate 260 for portions of the TSV 510 .

[0088] At view 504, the manufacturing process may include depositing an isolation layer and a seed layer into a TSV hole 505 to form a portion of a TSV 510 (also referred to as a TSV part or TSV portion). A portion of a TSV 510 may include a portion of a TSV 245 within a single substrate. Portions of TSV 510 may be combined to form TSV 245. The manufacturing process for forming a portion of TSV 510 may include depositing a TSV metal (e.g., copper) and stabilizing the metal (as desired), thereby filling the TSV hole 505 with a conductive material to form a portion of TSV 510. For example, the manufacturing process may include adding more than two substrate layers (e.g., multiple intervening substrates with their aligned portions of TSV 510) to form an elongated TSV 245 that passes through three or more substrates or dies.

[0089] At view 506, the first substrate 260 (e.g., with TSV 245) can be patterned and etched for fluid channels 250. For example, using masking and patterning, the fluid channels 250 can be etched along and between portions of TSV 510. The etching process can include a dry process for design flexibility, or it can include a wet process. In some implementations, anisotropic profiles can be used with either dry or wet etching techniques. In some implementations, the channels 250 can be etched after etching TSV trenches and / or creating portions of TSV 510 in the substrate. In some implementations, the channels 250 can be etched before etching TSV holes and / or creating portions of TSV 510 in the substrate.

[0090] At view 508, a second portion of TSV 510 may be created using second substrate 265 (e.g., aligned with and connected to the first portion of TSV 510 from views 502 and 504). At 508, the manufacturing process may include an option where a second substrate 265 (e.g., a wafer that will become a handle wafer) may add routing metal into some TSV locations. For example, metal may be added or removed for some TSVs 245. Inlet and outlet feeds may be etched into any combination of the second or first substrate (not shown), depending on the fluid flow path.

[0091] In one example, lateral metal may be included as a feature or part of an interposer in a die stack structure or cold plate. The placement of the lateral metal may be independent of the TSVs. Some TSVs may be connected to the TSVs. For example, such metal layers may be on either side of a cold plate or either substrate of a die (e.g., device) and they may not interfere with the bonding process.

[0092] Figure 6 A method or process flow 600 is described, which may be Figure 5 600 is a continuation of method or process flow 500, and wherein the two substrates may be combined by wafer bonding with the substrate features created in process flow 500. Method or process flow 600 may include actions or techniques for aligning and bonding the first and second substrates 260 and 265 to create the cold plate 215. For example, alignment may be included as part of the bonding process. For example, method 600 may include actions or manufacturing steps performed according to views 602, 604, 606, and 608.

[0093] At view 602, the method or process may include bonding a first substrate 260 (e.g., a fluid channel wafer) to a second substrate 265 (e.g., a handle wafer) based on surface activation, as well as other bonding techniques. For example, the first and second substrates may be bonded (e.g., permanently attached to each other) via direct bonding, hybrid bonding, adhesive bonding, or fusion bonding. The bonding process may or may not use external pressure to draw the substrates together. In some examples, the amount of force applied during bonding may include sufficient force to bring the surfaces into contact to achieve bond formation, but not more than this amount to avoid causing excessive warping or bending.

[0094] At view 604, the second substrate 265 may be thinned or reduced in thickness. For example, a process flow may be utilized to thin the handle wafer, such as back grinding, chemical mechanical polishing (CMP), or dry etching. For example, the process may undergo uBump metallization, where metal bumps or pads may be provided on the substrate surface and the thinning may be performed using temporary bonding and mounting to a carrier. This process may be repeated (e.g., cycled) until the desired substrate thickness is achieved.

[0095] At view 606, the process may perform substrate grinding to remove portions of the first substrate 260 covering the TSVs 245. The grinding process of the back side of the first substrate 260 may be performed until the TSVs 245 are exposed on the top surface. The process may include preparing the surface for bonding. Depending on the process, the cold plate wafer or device wafer may be segmented (e.g., singulated) into individual pieces (not shown) prior to bonding.

[0096] At view 608, the process may include bonding a device having a die 105 on top of a first substrate 260 of a cold plate 215. The method may include releasing the handling wafer and temporary bonding as desired. The resulting structure may include, for example, a die 105 with a surface of the device layer 205 facing the TSVs 245 routed through the cold plate 215 and coupled to the TSVs 245. One or more trenches 250 may be routed between the TSVs 245. For example, view 608 may correspond to a single trench 250 routed in a curved, meandering, or zigzag pattern among the TSVs 245. For example, view 608 may correspond to multiple trenches 250 routed in parallel with each other among the TSVs 245.

[0097] Figure 7An example 700 of a system, structure, or device that is a single substrate cold plate 215. It should be understood that the structure and bonding may include wafer-to-wafer bonding, die-to-wafer bonding, or die-to-die bonding in any orientation and involving any number of layers (e.g., substrates, dies, interposers). The example device, system, or structure 700 may be implemented, for example, according to the examples illustrated in cross-sectional views 702 and 704. The present technology solution may include making the cold plate 215 from a single substrate (e.g., substrate 260) where the surface of the die 105 may be used to seal the channel 250 instead of another intervening substrate. Thus, the cold plate 215 may include a single monolithic substrate (e.g., first substrate 260) and a structure in which the thermal resistance between the device layer 205 (e.g., with circuit 210) and the fluid 255 is minimized or reduced because the cooling fluid 255 may be in direct physical and thermal contact with the device die 105 and / or the surface of the device layer 205, thereby improving heat transfer from the circuit 210 to the fluid 255.

[0098] As shown in view 702, a device stack 705 may include multiple (e.g., a pair) of dies 105, e.g., with their own circuits 210, where the dies 105 are stacked on top of each other. TSVs 245 and channels 250 of a cold plate 215 may be below the device stack 705 for providing convective cooling to the device stack 705. The device stack 705 may include a single die 105 that may constitute the bottom half of 705, e.g., in a face-up configuration relative to its device layer 205. The thermal resistance between the device stack 705 and the cold plate 215 may be lower than the thermal resistance of any intervening substrate or layer. Using a single wafer cold plate 215, a fluid may be in direct contact with an interconnect or device layer. The interconnect or device layer surface may be sufficiently flat to enable bonding.

[0099] As shown in view 704, bonding pads 310 may be provided because circuit 210 may be turned downward to face cold plate 215, thereby allowing TSV 245 to be electrically coupled with electrical contacts of circuit 210. Device layer 205 is comprised of substrate embedded circuit elements and may additionally include interconnects between the circuit elements. Since the device layer may be turned toward the cold plate (also referred to as a face-down configuration), thermal resistance between fluid channel 250 and device layer 205 may be minimized because inclusion of die 105 or as part of device layer 205 may be used to provide coverage of channel 250 (e.g., sealing channel 250). In such examples, device layer 205 of die 105 may be in direct physical and thermal contact with fluid 255 flowing through fluid channel 250. In such configurations, device layer 205 may have a chemically inert surface in contact with fluid channel 250. Common chemically inert surfaces may include silicon-based dielectrics, such as silicon oxide or silicon nitride.

[0100] Figure 8An example 800 of a system, structure, or device according to an embodiment of the present technology solution is illustrated. The example 800 may include minimizing the cold plate to device distance of a multi-substrate cold plate design due to fabrication techniques and geometry. For a 50um wide channel 250, the distance 805 between the interior of the fluid channel 250 and the die 105 may be between 0 and 300um, such as, for example, 50um. An example distance 805 may be between 50 and 200um.

[0101] Hybrid bonding can be a technique for connecting two surfaces including both an isolation dielectric and a metal pad. Hybrid bonding can form a physical isolation seal to prevent the conductive material from being exposed to the cooling fluid. Hybrid bonding can minimize the number of materials to which the fluid is exposed, which can minimize the possibility of side reactions that can affect system reliability and performance through corrosion reactions and accumulation of corrosion products. This approach can maximize the contact area available for making metal connections. This design freedom should enable high connection density.

[0102] Fig. 9 900 is an example of a system, structure, or device having a cold plate with microfluidic channels for backside cooling. A die 105 (e.g., a top die or a chip on a wafer) may be disposed on a package substrate 115 along with one or more components 905. The components 905 may include other circuits, such as a die 105 having various processors, memory, and similar features. The example system 900 may include a fluid moving device 910 for pushing, forcing, or moving a fluid 255 through a fluid channel 250 below the die 105 via a fluid inlet line (FIL) 915. Once the fluid 255 is moved through the channel 250, thereby absorbing heat from the die 105, the fluid 255 may be output from the fluid channel 250 via a fluid outlet line (FOL) 920 and brought back to the FMD 910.

[0103] The fluid moving device (FMD) 910 may include any combination of hardware and software for moving fluid through the channels 250. The FMD 910 may include any mechanical or electromechanical system designed to push, move, transport, or propel a fluid (e.g., a gas or liquid) through one or more fluid channels 250. The FMD 910 may be configured to move fluid via a fluid outlet line 920 and a fluid inlet line 915, which may be used to couple fluid into and out of the fluid channels 250. The fluid moving device 910 may be configured to move fluid using a pressure differential provided by gravity (e.g., using an overhead fluid tank). The FMD 910 may include a micropump that may use a mechanism such as piezoelectric, electrostatic, or mechanical actuation to create a fluid flow through the channels 250. The FMD 910 may include a fan or gas or air blower, such as a fan that uses rotating blades to create air movement in the electronic system to create airflow through the fluid channel 250 to promote gas-based convection cooling. The FMD 910 may include a heat exchanger (e.g., a refrigeration device) to cool the fluid moving through the FIL 915 and the FOL 920 to reduce the temperature of the fluid 255 and improve heat transfer. The FMD 910 may include a fluid inlet line 915 that couples the fluid 255 to the inlet port 225 at a first (e.g., lower or cooler) temperature and receives the fluid 255 from the fluid outlet line 920 via the outlet port 230 at a second (e.g., higher or warmer) temperature. The FMD 910 may include a water or liquid cooling circulation system with a heat exchange system to cool the fluid 255 received from the cold plate 215 and insert the cooled fluid 255 back into the cold plate 215.

[0104] The present technical solution may include a recessed cold plate with components on the interposer of the plate and a fluid channel 250 in the package substrate with the top die 105. The present technical solution may include a hybrid bonding interface at the channel surface with TSVs on at least one side. For example, the solution may include a channel within at least one side of the fluid channel including the bonding interface. The solution may include a shape of the cooling fin that enables multiple TSVs to pass through. The present technical solution may use TSVs to connect or bond pads at the channel hybrid bonding interface. The use of TSVs outside the microchannel area (outside the fins) may be implemented, for example, to couple to other circuits or substrates.

[0105] Fig.10 is an example flow chart of a method 1000 for providing forced fluid convection cooling to a heat generating circuit via one or more trenches disposed next to a vertically oriented via (eg, TSV). The method 1000 may include, for example, using a method from a combination of Figures 1 to 9Actions 1005 to 1020 implemented by any combination of features of the described example structures, devices, or systems. At 1005, the method may include etching a contact into a first substrate. At 1010, the method may include etching a fluid channel into the first substrate. At 1015, the method may include bonding the first substrate to a second substrate to seal the fluid channel and form a passage. At 1020, the method may include providing thermal contact between the circuit and the fluid within the fluid channel.

[0106] At 1005, the method may include etching contacts into the first substrate. The method may include etching a plurality of electrical contacts (e.g., portions of through substrate vias or TSVs). The electrical contacts may be etched into the first substrate perpendicularly relative to a surface of the first substrate. Each of the plurality of electrical contacts (e.g., each portion of the TSV etched within the first substrate) may be separated from each other of the plurality of electrical contacts (e.g., portions of the TSV etched in the first substrate).

[0107] The portion of the TSV may be formed by etching one or more trenches, holes, cavities, or pillars for the portion of the TSV to be formed vertically downward (e.g., orthogonal to the plane of the surface). Each trench, hole, cavity, or pillar etched into the first substrate may be oriented or formed vertically relative to the surface of the first substrate into which the portion of the TSV is etched or formed. Each etched cavity, trench, hole, or pillar may be cylindrical and have a cross-section that is circular, triangular, square, rectangular, hexagonal, decagonal, or any other shape. Each etched cavity, trench, or hole may have a diameter of about 5 to 20 um (e.g., along the cross-section of the etched opening) and may have a depth of about 50 to 300 um (e.g., along the vertically oriented height of the portion of the TSV formed in the first substrate). The aspect ratio of the height to width of the portion of the TSV may be between 1:8 and 1:15, for example, 1:10. The trenches (e.g., openings, holes, cavities, or cylinders) etched for the electrical contacts in the first substrate may be filled with an electrical conductor (e.g., copper, aluminum, silver, or any other highly conductive material).

[0108] Portions of the TSVs may be etched in a row and according to the pitch (e.g., set separation distance) of the portions of the TSVs to be formed in the first substrate. The pitch may be equal for all TSVs or may vary and correspond to an average distance between the TSVs. Portions of the TSVs may be formed within portions of the first substrate that will contain cooling fins exposed to or interfaced with cooling fluid in the fluid channel. Portions of the TSVs may be etched along a plurality of columns, each column corresponding to a cooling fin of a plurality of cooling fins to be formed in the first substrate.

[0109] A second plurality of electrical contacts (e.g., second plurality of portions of TSVs) to be combined with portions of TSVs from the first substrate may be etched within the second substrate. For example, the second plurality of portions of TSVs (e.g., as trenches, holes, cavities, or pillars) may be etched perpendicularly relative to the surface of the second substrate and may be organized in columns or rows at the same pitch (e.g., separation distance) and have the same diameter and depth as the diameter and depth of the portions of TSVs in the first substrate. The second plurality of electrical contacts are perpendicular relative to the surface of the second substrate and may be arranged to reflect or match the size, shape, and arrangement of the portions of TSVs formed in the first substrate. The second plurality of electrical contacts formed or etched in the second substrate may match, correspond to, or be a mirror image of the plurality of portions of electrical contacts formed or etched in the first substrate. The trenches (e.g., openings, holes, cavities, or cylinders) etched for the electrical contacts in the second substrate may be filled with an electrical conductor (e.g., copper, aluminum, tungsten, or any other highly conductive material).

[0110] For example, the bonding surface may be compatible with hybrid bonding or other surfaces. For example, the bonding surface may be the top surface of the TSV, or may be a dedicated layer formed for bonding. The surface below this surface may use integrated circuit metallization, such as a metallization layer, pad, or contact.

[0111] At 1010, the method may include etching fluid channels into a first substrate. The method may include etching one or more channels along a surface of the first substrate. The method may include etching a plurality of fluid channels along the surface of the first substrate, each of the plurality of fluid channels being etched between one or more of a plurality of electrical contacts. For example, the one or more fluid channels may be etched as elongated grooves, holes, openings, or cylinders that form or are etched beside (e.g., on either side or near) portions of electrical contacts (e.g., portions of TSVs) within the first substrate. For example, the one or more fluid channels may be etched as elongated linear grooves that are etched beside (e.g., on either side) one or more columns of portions of TSVs etched into the first substrate.

[0112] The method may include forming a plurality of fins in a first substrate. Each fin in the plurality of fins may include a protrusion from a surface (e.g., having a shape and configuration) configured to promote convection of heat to a fluid within a fluid channel. For example, each cooling fin may be separated from each other cooling fin in the plurality of cooling fins by a fluid channel in the plurality of fluid channels.

[0113] Each cooling fin of the plurality of cooling fins may surround, include, or have two or more electrical contacts (e.g., portions of TSVs) of the plurality of electrical contacts passing therethrough (e.g., along the height of the cooling fin). For example, the respective two or more electrical contacts (e.g., portions of TSVs) that may be surrounded by each respective fin may extend vertically along the height of each respective fin. For example, portions of TSVs may pass vertically through each of the cooling fins such that a portion of the first substrate material surrounds a pillar, cavity, or elongated portion of an electrical conductor (e.g., copper) of the TSV along all sides except a top surface or a bottom surface (e.g., where portions of the TSV may be connected to other portions of the TSV to form the TSV and / or couple with a circuit).

[0114] The method may include creating inlet ports to input fluids into the plurality of fluid channels and etching outlet ports to output fluids from the plurality of fluid channels. For example, the inlet ports may be etched or drilled vertically or horizontally relative to the channels to allow fluids to be input into the fluid channels. For example, the output ports may be etched or drilled vertically or horizontally relative to the channels to allow fluids to be input into the fluid channels.

[0115] The method may include coupling a device configured to move a fluid through an inlet port and through a plurality of fluid channels and out of an outlet port to the inlet port. For example, a fluid moving device (e.g., a liquid pump with a heat exchanger for moving liquid fluid or a fan device for moving air) may be coupled via a fluid input line and a fluid output line to force the fluid to move through the fluid channels through the input port and the output port. The fluid moving device may input the fluid into the inlet port at a first temperature (e.g., a temperature below a first temperature threshold) and may output the fluid through the outlet port at a second temperature above the first temperature.

[0116] At 1015, the method may include bonding the first substrate to the second substrate to seal the fluid channels and form the vias. The method may include bonding the second substrate to the surface of the first substrate to seal the plurality of fluid channels along the surface of the first substrate. For example, the first substrate may be bonded to the second substrate using any technique such as surface activation, contact bonding (e.g., direct bonding, hybrid bonding, anodic bonding, or metal bonding), or using annealing (e.g., a heating process) to bond the two substrates together.

[0117] The method may include sealing a plurality of fluid channels between at least a first substrate and a second substrate to facilitate fluid movement through the plurality of channels to convect heat away from the circuit. For example, a groove of a channel etched in a first substrate may be sealed with a second substrate bonded to the first substrate, thereby creating a fluid channel sealed on all sides except for inputs and outputs (e.g., an inlet or input port and an outlet or output port) of the fluid channel.

[0118] The method may include axially aligning each of the second plurality of electrical contacts with at least one of the plurality of electrical contacts of the first substrate. The method may include engaging a surface of the second substrate with a surface of the first substrate to couple each of the second plurality of electrical contacts with at least one of the plurality of electrical contacts of the first substrate. The heat generating circuit may be configured to communicate (e.g., send and receive) a plurality of electrical signals via the plurality of electrical contacts and a second plurality of electrical contacts that are electrically continuous with the plurality of electrical contacts.

[0119] The method may include etching a second plurality of fluid channels along a surface of a second substrate to be bonded to the first substrate. Each of the second plurality of fluid channels may match each of the first plurality of fluid channels etched in the first substrate. The fluid channels in the first substrate and the fluid channels in the second substrate may be mirror images of each other and may have the same arrangement and the same features that reflect each other across an axis of a bonding interface between the two substrates.

[0120] The method may include aligning each of the second plurality of fluid channels with each corresponding fluid channel in the plurality of fluid channels to form a plurality of combined fluid channels. Each combined channel in the plurality of combined fluid channels may include a cross-section whose height includes the sum of the height of the corresponding channel in the plurality of channels and the height of the corresponding channel in the second plurality of channels. The cross-section may have a width corresponding to the width of one of the corresponding channels in the plurality of channels or the width of the corresponding channel in the second plurality of channels.

[0121] The method may include etching a second plurality of electrical contacts etched perpendicularly relative to a surface of the second substrate. Each of the second plurality of electrical contacts may be aligned with a corresponding one of the plurality of electrical contacts of the first substrate. The method may include etching a second plurality of fluid channels along a surface of the second substrate to be bonded to the first substrate. For example, each of the second plurality of fluid channels may be etched between one or more of the second plurality of electrical contacts.

[0122] At 1020, the method may include providing thermal contact between the circuit and the fluid within the fluid channel. The method may include providing thermal contact between the circuit and the first substrate to facilitate the plurality of fluid channels to dissipate heat from the circuit. For example, each of the device die, the first substrate, and the second substrate may include a thermal conductor material (e.g., having a thermal conductivity greater than 50 W / m*K). The bonding interface between the device die and the first substrate and the second bonding interface between the first substrate and the second substrate may each facilitate efficient heat conduction to the fluid channel.

[0123] The method may include bonding a second surface of the device die to a second surface of the first substrate to conduct heat from the circuit to a fluid moving, forcing, or pushing through the channel. The method may include bonding the surfaces of the two substrates to form a bonding interface along which heat is conducted between the circuit and the fluid in the fluid channel. The method may bond the device die to the first substrate and bond the first substrate to the second substrate to allow heat to be conducted across the bonding interface between the device die and the first substrate and across the bonding interface between the first substrate and the second substrate. A cold plate may be formed using the first substrate and the second substrate to conduct heat from the circuit to the fluid moving through the plurality of fluid channels via the device die, via a surface of the device die, and a second surface of the first substrate. The device die may include a circuit having an interconnect layer on a first surface of the device die.

[0124] In some examples, the channel may be implemented using only a single substrate (e.g., a first substrate) and the channel may be sealed using a device die (e.g., a device layer of the device die). In this configuration, the heat generating circuit may be covered with a protective layer of material (e.g., an oxide layer) that may be aligned and arranged to be in direct physical contact with a cooling fluid flowing through the fluid channel to facilitate convective cooling directly from the device die.

[0125] When an element is referred to herein as being "connected" or "coupled" to another element, it is understood that the element may be directly connected or coupled to the other element, or that there may be intervening elements between the connected or coupled elements. Conversely, when an element is referred to as being "directly connected" or "directly coupled" to another element, it is understood that there may be no intervening elements in the "direct" connection between the elements. However, the presence of a direct connection does not exclude other connections in which there may be intervening elements.

[0126] When an element is referred to herein as being in "thermal contact" with another element, it is understood that the element may be in direct or physical contact or coupling with the other element, or there may be intervening materials, layers, objects, or elements between the two elements. Conversely, when an element is referred to as being in "direct thermal contact" with another element, it is understood that there are no intervening elements in the "direct" connection between the elements. However, the presence of direct thermal contact does not exclude other thermal contacts in which there may be intervening elements.

[0127] When an element is referred to herein as being "disposed" below or above a particular element, it is understood that the element may be located or positioned directly above or below the other element, or that there may be intervening elements between the two elements. Conversely, when an element is referred to as being "directly disposed" above or below another element, it is understood that there are no intervening elements in a "direct" arrangement between the elements. However, the presence of a direct arrangement does not exclude other arrangements in which there may be intervening elements.

[0128] References to "or" may be interpreted as inclusive such that any term described using "or" may indicate any of a single, more than one, and all of the described terms. References to at least one of a combined list of terms may be interpreted as inclusive OR to indicate any of a single, more than one, and all of the described terms. For example, reference to "at least one of 'A' and 'B'" may include only 'A', only 'B', and both 'A' and 'B'. Such references used in conjunction with "includes" or other open terms may include additional items.

[0129] It should be noted that certain paragraphs of the present disclosure may reference terms (e.g., "first" and "second") related to transmission spatial streams, sounding frames, responses, and subsets of devices for the purpose of identifying or distinguishing one from another or one from others. These terms are not intended to relate entities (e.g., first substrate and second substrate) only in time or according to sequence, although in some cases, these entities may include such a relationship. These terms also do not limit the number of possible entities (e.g., delay circuits, filters, peak detectors) that may operate within a system or environment. It should be understood that the systems described above may provide multiple components of any or each of those components and that those components may be provided on independent structures or devices, or in some embodiments, provided on multiple structures or devices in a distributed system.

[0130] Although the foregoing written description of the methods and systems enables one of ordinary skill in the art to make and use embodiments thereof, one of ordinary skill in the art will understand and appreciate variations, combinations, and equivalents of the specific embodiments, methods, and examples presented herein. Therefore, the methods and systems should not be limited to the above-described embodiments, methods, and examples, but rather to all embodiments and methods within the scope and spirit of the present disclosure.

Claims

1. A system comprising: a plurality of electrical contacts etched into the surface of the first substrate, each of the plurality of electrical contacts being spaced apart from each other of the plurality of electrical contacts; a plurality of fluid channels etched along the surface of the first substrate, each of the plurality of fluid channels etched between one or more of the plurality of electrical contacts; a second substrate bonded to the surface of the first substrate to seal the plurality of fluid channels along the surface of the first substrate; and The plurality of fluid channels dissipate heat from an electrical circuit in thermal contact with the first substrate.

2. The system of claim 1, wherein the plurality of fluid channels are sealed between at least the first substrate and the second substrate to facilitate movement of fluid through the plurality of channels to convect the heat away from the circuit.

3. The system according to claim 1, comprising: A plurality of fins are formed in the first substrate, each of the plurality of fins being separated from each other of the plurality of fins by a fluid channel in the plurality of fluid channels, wherein each respective fin in the plurality of fins surrounds two or more of the plurality of electrical contacts, and the two or more electrical contacts extend vertically along the height of each respective fin.

4. The system according to claim 1, comprising: A device die comprising the circuit having an interconnect layer on a first surface of the device die, wherein a second surface of the device die is bonded with a second surface of the first substrate with zero clearance to facilitate conduction of the heat from the circuit through the second surface of the device die and the second surface of the first substrate.

5. The system according to claim 1, comprising: a second plurality of electrical contacts etched relative to a surface of the second substrate, wherein the surface of the second substrate engages the surface of the first substrate to axially align and couple each of the second plurality of electrical contacts with at least one of the plurality of electrical contacts of the first substrate; and Wherein the circuit is configured to communicate a plurality of electrical signals through the plurality of electrical contacts and a second plurality of electrical contacts that are electrically continuous with the plurality of electrical contacts.

6. The system according to claim 1, comprising: an inlet port for inputting fluid into the plurality of fluid channels; and An outlet port is used to output the fluid from the plurality of fluid channels.

7. The system according to claim 6, comprising: A device configured to move the fluid through the plurality of fluid channels and out of the outlet port via the inlet port, the fluid being input via the inlet port at a first temperature and output via the outlet port at a second temperature higher than the first temperature.

8. The system according to claim 1, comprising: A second plurality of fluid channels are etched along a surface of the second substrate bonded to the first substrate, wherein each of the second plurality of fluid channels is aligned with each respective fluid channel of the plurality of fluid channels to form a plurality of combined fluid channels.

9. A system according to claim 8, wherein each combined channel of the plurality of combined fluid channels comprises a cross-section whose height comprises the sum of the height of a corresponding channel of the plurality of channels and the height of a corresponding channel of the second plurality of channels, and the cross-section has a width corresponding to the width of one of the corresponding channels of the plurality of channels or the width of the corresponding channel of the second plurality of channels.

10. The system of claim 8, wherein each of the second plurality of fluid channels is etched between one or more of a second plurality of electrical contacts etched perpendicularly relative to the surface of the second substrate, each of the second plurality of electrical contacts being aligned with a corresponding one of the plurality of electrical contacts of the first substrate.

11. A method comprising: etching a plurality of electrical contacts in a surface of a first substrate, each of the plurality of electrical contacts being spaced apart from each other of the plurality of electrical contacts; etching a plurality of fluid channels along the surface of the first substrate, each of the plurality of fluid channels being etched between one or more of the plurality of electrical contacts; A second substrate is bonded to the surface of the first substrate to seal the plurality of fluid channels along the surface of the first substrate to provide thermal contact between the circuit and the first substrate to facilitate the plurality of fluid channels to dissipate heat from the circuit.

12. The method according to claim 11, comprising: The plurality of fluid channels are sealed between at least the first substrate and the second substrate to facilitate movement of fluid through the plurality of channels to convect the heat away from the circuit.

13. The method according to claim 11, comprising: forming a plurality of fins in the first substrate, each fin of the plurality of fins being separated from each other fin of the plurality of fins by a fluid channel of the plurality of fluid channels; and Two or more electrical contacts among the plurality of electrical contacts are surrounded by each fin among the plurality of fins, and the respective two or more electrical contacts surrounded by each respective fin extend vertically along the height of the respective fin.

14. The method according to claim 11, comprising: A second surface of a device die is joined with a second surface of the first substrate with zero clearance to facilitate conduction of the heat from the circuit to a fluid moving through the plurality of fluid channels via the second surface of the device die and the second surface of the first substrate, wherein the device die includes the circuit having an interconnect layer on the first surface of the device die.

15. The method according to claim 11, comprising: etching a second plurality of electrical contacts vertically relative to a surface of the second substrate; axially aligning each of the second plurality of electrical contacts with at least one of the plurality of electrical contacts of the first substrate; and The surface of the second substrate is joined to the surface of the first substrate to couple each of the second plurality of electrical contacts with the at least one of the plurality of electrical contacts of the first substrate, wherein the circuit is configured to communicate a plurality of electrical signals through the plurality of electrical contacts and the second plurality of electrical contacts that are electrically continuous with the plurality of electrical contacts.

16. The method according to claim 11, comprising: etching inlet ports to input fluid into the plurality of fluid channels; etching an outlet port to allow the fluid to be output from the plurality of fluid channels; and A device is coupled to the inlet port, the device configured to move the fluid through the inlet port, through the plurality of fluid channels, and out of the outlet port, the fluid being input into the inlet port at a first temperature and output through the outlet port at a second temperature higher than the first temperature.

17. The method according to claim 11, comprising: etching a second plurality of fluid channels along a surface of the second substrate to be bonded to the first substrate; Each of the second plurality of fluid channels is aligned with each corresponding fluid channel of the plurality of fluid channels to form a plurality of combined fluid channels, wherein each combined channel of the plurality of combined fluid channels comprises a cross-section whose height comprises the sum of the height of the corresponding channel of the plurality of channels and the height of the corresponding channel of the second plurality of channels, and the cross-section has a width corresponding to the width of one of the corresponding channels of the plurality of channels or the width of the corresponding channel of the second plurality of channels.

18. The method according to claim 11, comprising: etching a second plurality of electrical contacts etched vertically relative to the surface of the second substrate, each of the second plurality of electrical contacts being aligned with a corresponding one of the plurality of electrical contacts of the first substrate; A second plurality of fluid channels are etched along a surface of the second substrate to be bonded to the first substrate, wherein each of the second plurality of fluid channels is etched between one or more of the second plurality of electrical contacts.

19. A device for cooling a circuit, comprising: A first semiconductor substrate having a first metal component extending from a first surface of the first semiconductor substrate toward an interior of the first semiconductor substrate and a trench etched into and along the first surface of the first semiconductor substrate; a second semiconductor substrate having a second metal component extending from a first surface of the second semiconductor substrate toward an interior of the second semiconductor substrate; an interface along which the first surface of the first semiconductor substrate is joined to the first surface of the second semiconductor substrate to seal a fluid inside the channel between the first semiconductor substrate and the second semiconductor substrate and to form a metal via from the first metal component coupled to the second metal component; and A device die is in thermal contact with the first semiconductor substrate via a second interface, the device die being bonded to a second surface of the first semiconductor substrate along the second interface to dissipate heat generated by circuits in the device die to the fluid in the channel and to electrically connect the metal vias to the circuits.

20. The device according to claim 19, comprising: a plurality of channels, including the channels, etched along the first surface of the first substrate; an inlet port for facilitating input of the fluid into the plurality of channels; and An outlet port is provided to facilitate output of the fluid from the plurality of channels.

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