Temperature measurement consistency correction method, device, equipment, medium and program product

Abstract

The invention provides a temperature measurement consistency correction method and device, equipment, a medium and a program product, and relates to the technical field of temperature measurement. The method comprises the following steps: acquiring first original temperature data and an original voltage signal value measured at a target measurement position of a to-be-measured object through a to-be-calibrated temperature measurement device under a preset temperature rise condition; generating a photoelectric conversion efficiency correction factor according to the first original temperature data and a correction function corresponding to the temperature measuring device to be calibrated; correcting the original voltage signal value by using the photoelectric conversion efficiency correction factor to obtain a corrected voltage signal value; and obtaining corrected temperature data based on the corrected voltage signal value. By introducing the photoelectric conversion efficiency correction factor sigma, the voltage signal value of the temperature measuring device to be calibrated is corrected, and the corrected temperature data is calculated through the corrected voltage signal value, so that the corrected temperature data is closer to the standard temperature, the accuracy of wafer temperature field control is improved, and the accuracy of wafer temperature field calibration is improved. Therefore, the quality of the wafer is improved.

Description

Technical Field

[0001] The present application relates to the field of temperature measurement technology, and in particular to a temperature measurement consistency correction method, device, equipment, medium and program product. Background Art

[0002] During the processing of semiconductor wafers, the uniformity of the temperature field on the wafer surface in the equipment reaction chamber and the accuracy of the temperature directly affect the quality of thin film deposition on the wafer surface. Therefore, at different process temperatures, and during the process of heating up or cooling down, the reaction chamber needs to use multiple non-contact temperature measuring devices to measure the temperature at different positions of the wafer in real time to achieve real-time control of the wafer surface temperature.

[0003] However, in actual applications, different temperature measuring devices may produce inconsistent measurement results for the same temperature due to factors such as hardware differences, environmental changes, and equipment aging, making it impossible to accurately control the wafer temperature field, resulting in poor product quality. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a temperature measurement consistency correction method, device, equipment, medium and program product, which are used to correct the temperature measured by the temperature measuring device to be calibrated, thereby improving the accuracy of wafer temperature field control and improving the quality of the wafer.

[0005] In a first aspect, an embodiment of the present application provides a temperature measurement consistency correction method, the method comprising: obtaining first original temperature data and original voltage signal values ​​measured at a target measurement position of an object to be measured by a temperature measuring device to be calibrated under preset temperature rising conditions; generating a photoelectric conversion efficiency correction factor according to the first original temperature data and a correction function corresponding to the temperature measuring device to be calibrated; the correction function is obtained by fitting temperature data collected at the same position point of the same object at multiple temperatures using the temperature measuring device to be calibrated and the standard temperature measuring device; correcting the original voltage signal value using the photoelectric conversion efficiency correction factor to obtain a corrected voltage signal value; and obtaining corrected temperature data based on the corrected voltage signal value.

[0006] The embodiment of the present application introduces a photoelectric conversion efficiency correction factor σ to correct the voltage signal value of the temperature measuring device to be calibrated, and obtains corrected temperature data through calculation using the corrected voltage signal value, so that the corrected temperature data is closer to the standard temperature, thereby improving the accuracy of wafer temperature field control and improving the quality of the wafer.

[0007] In some embodiments, the method also includes: using the temperature measuring device to be calibrated and the standard temperature measuring device to collect data at the same position of the same object at multiple temperatures, obtaining multiple second original temperature data collected by the temperature measuring device to be calibrated and multiple standard temperature data collected by the standard temperature measuring device; fitting according to the multiple second original temperature data and the multiple standard temperature data to obtain fitting coefficients; and constructing a correction function based on the fitting coefficients.

[0008] In the embodiment of the present application, the plurality of second original temperature data and the plurality of standard temperature data are respectively acquired by collecting the same position point of the same object at multiple temperatures using the temperature measuring device to be calibrated and the standard temperature measuring device, so that the measurement deviation of the temperature measuring device to be calibrated compared with the standard temperature measuring device can be accurately identified. Based on this, the fitting coefficients are obtained according to the plurality of second original temperature data and the plurality of standard temperature data, and the correction function is constructed according to the fitting coefficients, ensuring that the fitting polynomial is as close as possible to all actual data points, thereby providing the best approximation to the data and improving the reliability of the correction function.

[0009] In some embodiments, the correction function is as follows:

[0010] σ=a n *T n +a n-1 *T n-1 +a n-2 *T n-2 +…+a1*T 1 +a0

[0011] Wherein, σ represents the photoelectric conversion efficiency correction factor corresponding to the temperature measuring device to be calibrated, T represents the first original temperature data measured by the temperature measuring device to be calibrated, a0, a1…a n-1 , a n They represent the fitting coefficients of the polynomial, and n represents the degree of the polynomial.

[0012] The embodiment of the present application calculates the photoelectric conversion efficiency correction factor corresponding to the first original temperature data through a correction function. Since the correction function is constructed based on the fitting coefficient, and the fitting coefficient reflects the deviation relationship between the temperature measuring device to be calibrated and the standard temperature measuring device, the obtained photoelectric conversion efficiency correction factor conforms to the temperature measurement characteristics of the temperature measuring device to be calibrated, so that the corrected temperature data is closer to the standard temperature, thereby improving the accuracy of the wafer temperature field control to improve the quality of the wafer.

[0013] In some embodiments, the original voltage signal value is corrected by using the photoelectric conversion efficiency correction factor to obtain the corrected voltage signal value, including: correcting the original voltage signal by using a photoelectric conversion function to obtain the corrected voltage signal value; the photoelectric conversion function is as follows:

[0014] V′=σ*V

[0015] Wherein, V′ represents the corrected voltage signal value corresponding to the original voltage signal value, V represents the original voltage signal value, and σ represents the photoelectric conversion efficiency correction factor corresponding to the temperature measuring device to be calibrated.

[0016] The embodiment of the present application corrects the original voltage signal by utilizing a photoelectric conversion function to obtain a corrected voltage signal value. Since the photoelectric conversion function includes a photoelectric conversion efficiency correction factor, the corrected voltage signal value is closer to the standard voltage signal value, so that the corrected temperature data obtained based on the corrected voltage signal value is closer to the standard temperature, thereby improving the accuracy of wafer temperature field control and improving the quality of the wafer.

[0017] In some embodiments, obtaining the corrected temperature data based on the corrected voltage signal value includes: calculating the corrected temperature data using Planck's blackbody formula according to the corrected voltage signal value.

[0018] In the embodiment of the present application, the corrected temperature data obtained based on the corrected voltage signal value is closer to the standard temperature, thereby improving the accuracy of wafer temperature field control and improving the quality of the wafer.

[0019] In some embodiments, before obtaining the first original temperature data and original voltage signal value measured at the target measurement position of the object to be measured by the temperature measuring device to be calibrated under preset temperature rising conditions, the method also includes: obtaining the emissivity of the object to be measured; if the emissivity is not within the preset emissivity threshold range, re-determining the correction function of the temperature measuring device to be calibrated.

[0020] The embodiment of the present application takes into account that the temperature measuring device calculates the temperature based on the radiation intensity emitted by the object. Therefore, when the emissivity changes, even if the actual temperature of the object does not change, the radiation intensity measured by the temperature measuring device will be different, resulting in a large error in the final temperature measurement data. Therefore, in order to maintain the accuracy of the measurement result, when the emissivity is not within the preset emissivity threshold range, it is necessary to re-determine the correction function of the temperature measuring device to be calibrated to obtain a new correction factor to correct the voltage signal value of the temperature measuring device to be calibrated, thereby improving the accuracy of the wafer temperature field control and improving the quality of the wafer.

[0021] In a second aspect, an embodiment of the present application provides a temperature measurement consistency correction device, which includes: an acquisition module, used to obtain first original temperature data and original voltage signal values ​​measured at a target measurement position of an object to be measured by a temperature measuring device to be calibrated under preset temperature rising conditions; a generation module, used to generate a photoelectric conversion efficiency correction factor according to the first original temperature data and a correction function corresponding to the temperature measuring device to be calibrated; the correction function is obtained by fitting the temperature data collected at the same position point of the same object at multiple temperatures using the temperature measuring device to be calibrated and the standard temperature measuring device; a correction module, used to correct the original voltage signal value using the photoelectric conversion efficiency correction factor to obtain a corrected voltage signal value; an acquisition module, used to obtain corrected temperature data based on the corrected voltage signal value.

[0022] In a third aspect, an embodiment of the present application provides an electronic device, comprising: a processor, a memory, a storage medium and a bus, wherein the processor and the memory communicate with each other through the bus; the memory stores program instructions that can be executed by the processor, and the processor calls the program instructions to execute the method steps of the first aspect.

[0023] In a fourth aspect, an embodiment of the present application provides a non-transitory computer-readable storage medium, comprising: the computer-readable storage medium stores computer instructions, and the computer instructions enable the computer to execute the method steps of the first aspect.

[0024] In a fifth aspect, an embodiment of the present application provides a computer program product, including: a computer program, which executes the method steps of the first aspect when executed by a processor.

[0025] Other features and advantages of the present application will be described in the subsequent description, and in part will become apparent from the description, or will be understood by implementing the embodiments of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0027] Figure 1 A flow chart of a temperature measurement consistency correction method provided in an embodiment of the present application;

[0028] Figure 2 A temperature measurement diagram of a standard temperature measurement device provided in an embodiment of the present application;

[0029] Figure 3 A temperature measurement diagram of a temperature measurement device to be calibrated provided in an embodiment of the present application;

[0030] Figure 4 A schematic diagram of temperature measurement curves of a standard temperature measuring device before correction and a temperature measuring device to be calibrated provided in an embodiment of the application;

[0031] Figure 5 A photoelectric conversion efficiency correction factor fitting curve provided in an embodiment of the present application;

[0032] Figure 6 A corrected temperature curve provided in an embodiment of the present application;

[0033] Figure 7 A schematic diagram of a temperature measurement interval for maintaining temperature measurement consistency when emissivity changes provided in an embodiment of the present application;

[0034] Figure 8 A schematic diagram of the structure of a temperature measurement consistency correction device provided in an embodiment of the present application;

[0035] Fig. 9 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0036] The following embodiments of the technical solution of the present application are described in detail in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application, and are therefore only used as examples, and cannot be used to limit the scope of protection of the present application.

[0037] It should be noted that all technical and scientific terms used in this document have the same meanings as those generally understood by technicians in the technical field to which this application belongs; the terms used in this document are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

[0038] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0039] During the processing of semiconductor wafers, the uniformity of the temperature field on the wafer surface in the equipment reaction chamber and the accuracy of the temperature directly affect the quality of thin film deposition on the wafer surface. In addition, the non-uniformity of the temperature field on the wafer surface during the process of heating and cooling may also cause thermal stress inside the wafer, causing problems such as deformation, cracking, and flying wafers. Therefore, at different process temperatures, and during the process of heating or cooling, the reaction chamber needs to use multiple non-contact temperature measurement devices to measure the temperature of different positions of the wafer in real time to achieve real-time control of the wafer surface temperature.

[0040] When measuring temperature using a temperature measuring device, the thermal radiation emitted by the object to be measured is collected by the optical collecting element of the temperature measuring device to the photosensitive surface of the avalanche photodiode, and then converted into an electrical signal and output to the computer. The computer finally processes the electrical signal to display the temperature corresponding to the electrical signal. Therefore, the final temperature obtained is the temperature data obtained by further calculating the electrical signal of the temperature measuring device. When the computer calculates the temperature based on the electrical signal, it uses the Planck black body formula for calculation.

[0041] Among them, the output voltage V of the avalanche photodiode is proportional to the incident light intensity I of the photosensitive surface: V=k*I, where k is a fixed constant and I represents the incident light intensity of the photosensitive surface of the avalanche photodiode of the temperature measuring device.

[0042] However, in actual temperature measurement, due to hardware differences in various temperature measuring devices, such as: spectral response wavelength deviation caused by filters and avalanche photodiodes, the photoelectric conversion efficiency of avalanche photodiodes is not an ideal linear relationship, the thermal radiation collection rate of the optical measurement end is different, as well as environmental changes, equipment aging and other factors, all of which will lead to differences in the incident light intensity and photoelectric conversion efficiency of the photosensitive surface. As a result, different temperature measuring devices will output different voltage signals for semiconductor devices during heating or cooling or at different process temperature points, resulting in different final temperatures. As a result, the wafer temperature field cannot be accurately controlled, resulting in poor product quality.

[0043] Although some existing temperature measurement equipment has added the function of temperature measurement consistency correction, it is mainly in the form of emissivity correction under different temperature segments and fixed temperature difference compensation. In the case of emissivity correction under different temperature segments, the emissivity may be greater than 1, or may not conform to physical laws as the temperature changes, which may affect the process judgment of process personnel. The fixed temperature difference compensation method can only compensate at a specific temperature point, which is not conducive to continuous control of the temperature field on the wafer surface during the entire heating or cooling process; and when the temperature changes greatly before and after the process growth, the fixed temperature point compensation is difficult to adapt to the changes in the entire temperature segment, resulting in inaccurate temperature measurement and control.

[0044] In addition, when the object to be measured changes, it is necessary to re-correct the segmented emissivity within the entire temperature range or re-adjust the temperature difference at a fixed temperature point, which increases the complexity of the operation and the workload.

[0045] Based on this, an embodiment of the present application proposes a temperature measurement consistency correction method, which corrects the voltage signal value of the temperature measuring device to be calibrated by introducing a photoelectric conversion efficiency correction factor σ, and obtains the corrected temperature data through calculation of the corrected voltage signal value, so that the corrected temperature data is closer to the standard temperature, thereby improving the accuracy of wafer temperature field control and improving the quality of the wafer.

[0046] Figure 1 A flow chart of a temperature measurement consistency correction method provided in an embodiment of the present application. It can be understood that the temperature measurement consistency correction method provided in the embodiment of the present application can be applied to terminal devices (also referred to as electronic devices) and servers; wherein the terminal device can specifically be a smart phone, a tablet computer, a computer, a personal digital assistant (PDA), etc.; the server can specifically be an application server or a Web server. To facilitate understanding of the technical solution provided in the embodiment of the present application, the application scenario of the temperature measurement consistency correction method provided in the embodiment of the present application is introduced below, taking the server as the execution subject as an example.

[0047] like Figure 1 As shown, the method includes:

[0048] Step S101 : The server obtains first original temperature data and original voltage signal value measured at a target measurement position of an object to be measured by a temperature measuring device to be calibrated under a preset temperature rising condition.

[0049] The temperature measuring device to be calibrated may be a thermocouple type, a thermal resistor type, a semiconductor temperature sensor, etc. The specific type of the temperature measuring device to be calibrated may be set according to actual conditions.

[0050] Since semiconductor wafers are processed in a reaction chamber, and the temperature measuring device to be calibrated is usually arranged on the outer surface of the reaction chamber, and measures the object to be measured through the light aperture, the measurement method of the temperature measuring device to be calibrated is usually non-contact thermal radiation measurement.

[0051] The preset heating condition is a temperature range [T_start, T_end] pre-set based on user needs, where T_start is the starting temperature and T_end is the end temperature.

[0052] For example, the user needs to measure the temperature field changes on the wafer surface in a temperature rise environment with a temperature range of [800℃, 1600℃]. At this time, the temperature range of [800℃, 1600℃] is the preset temperature rise condition.

[0053] Based on the above content, it can be known that the temperature measuring device to be calibrated collects the thermal radiation emitted by the object to be measured onto the photosensitive surface of the avalanche photodiode through an optical collecting element, converts it into an electrical signal value, and transmits the electrical signal value to the server, so that the server calculates the corresponding temperature data based on the electrical signal value.

[0054] Therefore, after determining the temperature measuring device to be calibrated and the preset temperature rising conditions, the server obtains the first original temperature data and the original voltage signal value measured by the temperature measuring device to be calibrated at the target measurement position of the object to be measured under the preset temperature rising conditions.

[0055] The original voltage signal value is an electrical signal value directly measured by the temperature measuring device to be calibrated, and the first original temperature data is temperature data calculated based on the original voltage signal value.

[0056] Step S102, the server generates a photoelectric conversion efficiency correction factor according to the first original temperature data and a correction function corresponding to the temperature measuring device to be calibrated; the correction function is obtained by fitting the temperature data collected at the same position of the same object at multiple temperatures using the temperature measuring device to be calibrated and the standard temperature measuring device.

[0057] Before using the temperature measuring device to be calibrated to measure the object to be measured, a correction function of the temperature measuring device to be calibrated has been determined through experiments. The construction process of the correction function is shown in the following embodiment and will not be repeated here.

[0058] The correction function characterizes the relationship between the original temperature data measured by the temperature measuring device to be calibrated and the photoelectric conversion efficiency correction factor, wherein the original temperature data measured by the temperature measuring device to be calibrated is the independent variable of the correction function, and the photoelectric conversion efficiency correction factor is the dependent variable of the correction function.

[0059] Therefore, the server obtains the photoelectric conversion efficiency correction factor of the temperature measuring device to be calibrated by bringing the first original temperature data into the correction function.

[0060] Step S103: the server corrects the original voltage signal value using the photoelectric conversion efficiency correction factor to obtain a corrected voltage signal value.

[0061] Step S104: the server obtains corrected temperature data based on the corrected voltage signal value.

[0062] After determining the photoelectric conversion efficiency correction factor, the photoelectric conversion efficiency correction factor is multiplied with the original voltage signal to correct the original voltage signal value to obtain a corrected voltage signal value, and the corrected temperature data is calculated based on the corrected voltage signal value.

[0063] Optionally, after the photoelectric conversion efficiency correction factor is determined, the original voltage signal may be divided by the photoelectric conversion efficiency correction factor to correct the original voltage signal value.

[0064] The embodiment of the present application introduces a photoelectric conversion efficiency correction factor σ to correct the voltage signal value of the temperature measuring device to be calibrated, and obtains corrected temperature data through calculation using the corrected voltage signal value, so that the corrected temperature data is closer to the standard temperature, thereby improving the accuracy of wafer temperature field control and improving the quality of the wafer.

[0065] In some embodiments, the method also includes: using the temperature measuring device to be calibrated and the standard temperature measuring device to collect data at the same position of the same object at multiple temperatures, obtaining multiple second original temperature data collected by the temperature measuring device to be calibrated and multiple standard temperature data collected by the standard temperature measuring device; fitting according to the multiple second original temperature data and the multiple standard temperature data to obtain fitting coefficients; and constructing a correction function based on the fitting coefficients.

[0066] During the implementation process, it is necessary to obtain a plurality of standard temperature data of a standard temperature measuring device and a plurality of second original temperature data of the temperature measuring device to be calibrated through experiments in advance.

[0067] The test process is as follows:

[0068] Step 1: Determine the standard temperature measuring device and the temperature measuring device to be calibrated. If three temperature measuring devices are needed to measure the temperature of three different positions of the object to be measured, at this time, any one of the three can be used as the standard temperature measuring device, and the remaining two can be used as the temperature measuring devices to be calibrated. Alternatively, another temperature measuring device that meets the standard requirements can be selected as the standard temperature measuring device, and the three temperature measuring devices are all temperature measuring devices to be calibrated.

[0069] Step 2: Install the standard temperature measuring device. Install the standard temperature measuring device at the fixed measuring position of the equipment reaction chamber so that it can measure the data of the fixed measuring position of the object to be measured through the light aperture of the reaction chamber.

[0070] Figure 2 A temperature measurement diagram of a standard temperature measurement device provided in an embodiment of the present application, such as Figure 2 As shown, the object to be measured is a wafer, the wafer is placed in a reaction chamber, the fixed measurement position is the fixed measurement position A of the wafer, the black square is a standard temperature measuring device, and the standard temperature measuring device measures the fixed measurement position A of the wafer through the light aperture of the reaction chamber (where the arrow is located).

[0071] Step 3: Use the preset heating conditions to heat the reaction chamber and obtain the heating data of the standard temperature measuring device. After the reaction chamber is kept at a constant temperature of T_start with a fixed power P1, the temperature is raised to T_end with a heating power P, and the heating time is t seconds. Obtain the heating data of the standard temperature measuring device: multiple standard temperature data T1 of the standard temperature measuring device that changes with time from the starting temperature T_start to the end temperature T_end, the corresponding standard analog electrical signal value V1, and the heating time t.

[0072] Step 4: Disassemble the standard temperature measuring device and install the temperature measuring device to be calibrated. Install the temperature measuring device to be calibrated at the fixed measurement position of the equipment reaction chamber so that it can measure the data of the fixed measurement position of the object to be measured through the light aperture of the reaction chamber.

[0073] Figure 3 A temperature measurement diagram of a temperature measurement device to be calibrated provided in an embodiment of the present application, such as Figure 3 As shown, the object to be measured is a wafer, the wafer is placed in the reaction chamber, the fixed measurement position is the fixed measurement position A of the wafer, the black square is the temperature measuring device to be calibrated, and the temperature measuring device to be calibrated measures the fixed measurement position A of the wafer through the light aperture of the reaction chamber (the position where the arrow is located).

[0074] Step 5: Use the same heating conditions as the standard temperature measuring device to heat the reaction chamber and obtain the temperature data of the temperature measuring device to be calibrated. Similarly, use the fixed power P1 to keep the reaction chamber constant at temperature T_start, and then use the heating power P to heat the temperature to temperature T_end. The heating time is t seconds, that is, the heating environment is guaranteed to be consistent twice. Obtain the temperature data of the temperature measuring device to be calibrated: multiple second original temperature data T2 that change with time within t seconds and the corresponding original analog electrical signal value V2.

[0075] Since the standard temperature measuring device and the temperature measuring device to be calibrated have the same acquisition frequency, the amount of temperature data collected by the two is consistent within the same time, and the two heating environments are consistent, the measurement error caused by hardware differences under the same thermal radiation environment can be obtained.

[0076] Figure 4 A schematic diagram of a temperature measurement curve of a standard temperature measuring device before correction and a temperature measuring device to be calibrated provided in an embodiment of the application, such as Figure 4 As shown, there is a deviation between the standard temperature data and the second original temperature data, and the standard temperature data is greater than the second original temperature data.

[0077] Since the temperature measuring device outputs an electrical signal value, the temperature data is obtained by calculating the electrical signal. Therefore, the actual deviation relationship between the standard analog electrical signal value V1 of the standard temperature measuring device and the original analog electrical signal value V2 of the temperature measuring device to be calibrated can be calculated for each temperature point within time t, that is, the actual photoelectric conversion efficiency correction factor:

[0078] σ1=V1 / V2

[0079] Among them, σ1 is the real photoelectric conversion efficiency correction factor corresponding to a certain temperature point, V1 represents the standard analog electrical signal value measured by the standard temperature measuring device at a certain temperature point, and V2 represents the original analog electrical signal value measured by the temperature measuring device to be calibrated at a certain temperature point.

[0080] However, since the embodiment of the present application corrects the temperature in a temperature range, the deviation relationship of a single temperature point cannot characterize the continuity of the temperature deviation change in a temperature range. Therefore, a correction function is constructed to represent the deviation relationship between the original temperature measured by the temperature measuring device to be calibrated and the standard temperature in a certain temperature range.

[0081] That is, after obtaining a plurality of standard temperature data and a plurality of second original temperature data through experiments, polynomial fitting is performed according to the plurality of second original temperature data and the plurality of standard temperature data to obtain fitting coefficients, and a correction function is constructed according to the fitting coefficients, so that the deviation relationship determined by the correction function is consistent with the actual deviation relationship.

[0082] Figure 5 A photoelectric conversion efficiency correction factor fitting curve provided in the embodiment of the present application is as follows: Figure 5 As shown, the solid line is a curve composed of multiple real photoelectric conversion efficiency correction factors, and the dotted line is a fitting curve of the photoelectric conversion efficiency correction factor determined by the correction function, and the two curves are almost consistent.

[0083] Typically, the fitting coefficients are obtained by methods such as least squares or gradient descent.

[0084] Exemplarily, the process of obtaining the fitting coefficients by the least squares method is as follows:

[0085] Step 1: Collect data: Get multiple standard temperature data and multiple second original temperature data. These data are the basis for fitting, and the accuracy and reliability of the data need to be ensured.

[0086] Step 2: Select the model: Determine the fitting model to be used. The fitting model is: σ′=a n *(T′) n +a n-1 *(T′) n-1 +a n-2 *(T′) n-2+…+a1*(T′) 1 +a0, where σ′ represents the photoelectric conversion efficiency correction factor corresponding to the temperature measuring device to be calibrated, T′ represents the original temperature data measured by the temperature measuring device to be calibrated, a0, a1…a n-1 , a n They represent the fitting coefficients of the polynomial, and n represents the degree of the polynomial.

[0087] It should be noted that the above-mentioned fitting model is only an example of the present application, and in actual application, the fitting model can be specifically set according to the actual situation, and the present application does not make any specific limitation.

[0088] Step 3: Construct a deviation vector: Construct a deviation vector based on the actual deviations of the standard temperature measuring device and the temperature measuring device to be calibrated at each temperature point within time t. The deviation vector reflects the difference between the predicted value and the actual value.

[0089] Step 4: Minimize the square error: The goal of the least squares method is to minimize the sum of the squares of the deviation vector. By adjusting the model parameters, that is, the fitting coefficients, the deviation between the predicted value and the actual value is as small as possible.

[0090] Step 5: Solve the linear equations: In order to find the fitting coefficients that minimize the squared error, it is necessary to take the partial derivatives of the deviation vector with respect to the fitting coefficients and set these partial derivatives equal to zero, thereby obtaining a linear equation system about the fitting coefficients.

[0091] Step 6: Solve the linear equations about the fitting coefficients to obtain the optimal fitting coefficients.

[0092] Step 7: Verification and evaluation: Use the obtained fitting coefficients to construct a correction function and apply it to new data to verify the accuracy and reliability of the correction function.

[0093] For the preset temperature rise conditions [T_start, T_end], the final correction function constructed is as follows:

[0094] σ=a n *T n +a n-1 *T n-1 +a n-2 *T n-2 +…+a1*T 1 +a0

[0095] Wherein, σ represents the photoelectric conversion efficiency correction factor corresponding to the temperature measuring device to be calibrated, T represents the first original temperature data measured by the temperature measuring device to be calibrated, a0, a1…a n-1 , a n They represent the fitting coefficients of the polynomial, and n represents the degree of the polynomial.

[0096] After the fitting coefficients are determined, a correction function is constructed by the fitting coefficients to describe the relationship between the photoelectric conversion efficiency correction factor and the first original temperature data measured by the temperature measuring device to be calibrated, so as to predict the correction factor at any given temperature by the correction function.

[0097] It should be noted that the form of the correction function finally constructed corresponds to the pre-selected fitting model. Therefore, if the pre-selected fitting model is different, the correction function finally obtained is also different. Therefore, the correction function provided in the embodiment of the present application is only one of the options. In practical applications, the corresponding correction function can be constructed according to the actual situation, as long as it can show the relationship between the original temperature data of the temperature measuring device to be calibrated and the photoelectric conversion efficiency correction factor.

[0098] It should also be noted that for different temperature measuring devices to be calibrated, due to their differences from the standard temperature measuring device, the fitting coefficients finally determined may also be different. Therefore, each temperature measuring device to be calibrated corresponds to a set of fitting coefficients, and accordingly, each temperature measuring device to be calibrated corresponds to a correction function.

[0099] Optionally, to further improve the fitting effect, a multi-segment linear fitting method can be used to fit to obtain a multi-segment correction function. The multi-segment correction function still uses the original temperature data measured by the temperature measuring device to be calibrated as the independent variable and the photoelectric conversion efficiency correction factor as the dependent variable.

[0100] The specific process of obtaining the multi-segment correction function is as follows:

[0101] [T_start, T_end] is divided into [T_start, T_1], [T_1, T_2], [T_2, T_3], ..., [T_(n-1), T_end], and for each temperature interval, a corresponding sub-correction function is determined, and a multi-segment correction function is generated based on multiple sub-correction functions.

[0102] The multi-stage correction function is as follows:

[0103] For [T_start, T_1]: σ = a_0*T+b_0;

[0104] For [T_1, T_2]: σ = a_1*T+b_1;

[0105] For [T_2, T_3]: σ=a_2*T+b_2;

[0106] …

[0107] For [T_(n-1), T_end]: σ=a_(n-1)*T+b_(n-1).

[0108] Wherein, n is the number of sub-temperature intervals divided by the preset temperature segment, a_0, a_1, a_2, ..., a_(n-1) are the slopes of the linear functions in each sub-temperature interval, and b_0, b_1, b_2, ..., b_(n-1) are the intercepts of the linear functions in each sub-temperature interval. The slope and intercept of the linear function in each sub-temperature interval are determined by fitting based on the temperature data measured by the standard temperature measuring device and the temperature measuring device to be calibrated in the corresponding sub-temperature interval.

[0109] The value of n can be adjusted according to the actual fitting effect. The larger the n value is, the better the fitting effect is. However, too large a value of n will increase the complexity of the measurement work. Usually, the value of n is set specifically according to the actual effect.

[0110] The photoelectric conversion efficiency correction factor corresponding to the first original temperature data is calculated by using a correction function. Since the correction function is constructed based on a fitting coefficient, and the fitting coefficient reflects the deviation relationship between the temperature measuring device to be calibrated and the standard temperature measuring device, the obtained photoelectric conversion efficiency correction factor conforms to the temperature measurement characteristics of the temperature measuring device to be calibrated, so that the corrected temperature data is closer to the standard temperature, thereby improving the accuracy of wafer temperature field control and improving the quality of the wafer.

[0111] Finally, the performance of the correction function can be evaluated by calculating the error, correlation coefficient and other indicators of the corrected data.

[0112] In the embodiment of the present application, the plurality of second original temperature data and the plurality of standard temperature data are respectively acquired by collecting the same position point of the same object at multiple temperatures using the temperature measuring device to be calibrated and the standard temperature measuring device, so that the measurement deviation of the temperature measuring device to be calibrated compared with the standard temperature measuring device can be accurately identified. Based on this, the fitting coefficients are obtained according to the plurality of second original temperature data and the plurality of standard temperature data, and the correction function is constructed according to the fitting coefficients, ensuring that the fitting polynomial is as close as possible to all actual data points, thereby providing the best approximation to the data and improving the reliability of the correction function.

[0113] In some embodiments, the server corrects the original voltage signal value using the photoelectric conversion efficiency correction factor to obtain the corrected voltage signal value, including: the server corrects the original voltage signal using a photoelectric conversion function to obtain the corrected voltage signal value; the photoelectric conversion function is as follows:

[0114] V′=σ*V

[0115] Wherein, V′ represents the corrected voltage signal value corresponding to the original voltage signal value, V represents the original voltage signal value, and σ represents the photoelectric conversion efficiency correction factor corresponding to the temperature measuring device to be calibrated.

[0116] According to the above content, V=k*I, where k is a fixed constant and I represents the incident light intensity on the photosensitive surface of the avalanche photodiode of the temperature measuring device.

[0117] Therefore, the photoelectric conversion function can be written as: V′=σ*k*I.

[0118] Through the photoelectric conversion function, the corrected voltage signal value corresponding to the original voltage signal value measured by the temperature measuring device to be calibrated can be calculated.

[0119] The embodiment of the present application corrects the original voltage signal by utilizing a photoelectric conversion function to obtain a corrected voltage signal value. Since the photoelectric conversion function includes a photoelectric conversion efficiency correction factor, the corrected voltage signal value is closer to the standard voltage signal value, so that the corrected temperature data obtained based on the corrected voltage signal value is closer to the standard temperature, thereby improving the accuracy of wafer temperature field control and improving the quality of the wafer.

[0120] In some embodiments, the server obtains the corrected temperature data based on the corrected voltage signal value, including: the server calculates the corrected temperature data using Planck's blackbody formula according to the corrected voltage signal value.

[0121] Planck's blackbody radiation law describes the relationship between the electromagnetic wave energy radiated by a blackbody per unit area per unit time and the frequency and temperature. In temperature measurement, Planck's law can be used to calculate the temperature of an object based on its radiation energy.

[0122] Planck's blackbody formula is as follows:

[0123]

[0124] Among them, E(λ,T) represents the energy radiated by a black body at a specific wavelength λ and temperature T, that is, the black body radiation power, h is Planck's constant, c is the speed of light, κ is the Boltzmann constant, and e is the natural logarithm.

[0125] The corrected voltage signal value reflects the thermal radiation intensity of the object to be measured. The corrected voltage signal value is converted into radiation power to obtain the real radiation power E real Since the actual radiation power E of the actual object real is its emissivity ε and the blackbody radiation power E at the same temperature blackbody Therefore, it is necessary to convert the measured real radiation power into the equivalent blackbody radiation power, that is,

[0126] After converting the real radiation power into the equivalent blackbody radiation power, the corrected temperature data is solved based on the Planck blackbody formula. In the solution process, inverse operations are involved, which are usually implemented by numerical methods, such as the Newton-Raphson method or the bisection method.

[0127] Figure 6 A modified temperature curve provided in the embodiment of the present application, such as Figure 6 As shown, the corrected temperature data is consistent with the temperature data of the standard temperature measuring device.

[0128] In the embodiment of the present application, the corrected temperature data obtained based on the corrected voltage signal value is closer to the standard temperature, thereby improving the accuracy of wafer temperature field control and improving the quality of the wafer.

[0129] In some embodiments, before obtaining the first original temperature data and the original voltage signal value measured at the target measurement position of the object to be measured by the temperature measuring device to be calibrated under the preset temperature rising conditions, the method also includes: the server obtains the emissivity of the object to be measured; if the emissivity is not within the preset emissivity threshold range, the correction function of the temperature measuring device to be calibrated is re-determined.

[0130] Emissivity is the ratio of the surface radiation capacity of the object to be measured to the radiation capacity of an ideal black body, and is a dimensionless value between 0 and 1. It characterizes the ability of the surface of the object to be measured to radiate energy, and is related to the properties and surface state of the object to be measured.

[0131] When the emissivity changes, since the temperature measuring device calculates the temperature based on the radiation intensity emitted by the object, even if the actual temperature of the object does not change, the radiation intensity measured by the temperature measuring device will be different, and thus the final calculated temperature will also be different.

[0132] Therefore, if the emissivity changes, the temperature needs to be corrected again in order to maintain the accuracy of the measurement results.

[0133] When constructing the correction function, the present application determines it by polynomial fitting, thus providing a continuous correction function that can describe the relationship between the photoelectric conversion efficiency correction factor and the original temperature, that is, it can represent the change trend of the variable within a certain range. This means that at any temperature between the known data points, the corresponding photoelectric conversion efficiency correction factor can be predicted, so even if the emissivity changes, as long as the change is within a certain range, the correction function can still provide accurate predictions.

[0134] Optionally, when constructing the correction function, the present application can also use a multi-segment linear fitting method for fitting, and each sub-temperature interval corresponds to a correction function, and each correction function can describe the relationship between the photoelectric conversion efficiency correction factor and the original temperature. Therefore, the multi-segment correction function can still represent the change trend of the variable within a certain range. Therefore, even if the emissivity changes, as long as the change is within a certain range, the correction function can still provide accurate predictions.

[0135] Therefore, if the emissivity is not within the preset emissivity threshold range, it is necessary to redetermine the correction function to redetermine the photoelectric conversion efficiency correction factor.

[0136] The preset emissivity threshold interval is predetermined based on user needs.

[0137] Based on the above embodiments, it can be known that, assuming that the emissivity of the object to be measured is ε1, when the object to be measured is used as a reference, a correction function is obtained under the preset heating condition of [T_start, T_end], and the temperature measuring device to be calibrated is calibrated based on the correction function. During actual use, the calibrated temperature measuring device can maintain good temperature measurement consistency in the temperature range from the starting temperature T_start to the end temperature T_end.

[0138] In actual applications, different emissivity threshold intervals are determined based on different user needs. Since the emissivity will affect the final temperature measurement results, different emissivities will correspond to different temperature measurement intervals. Therefore, it is necessary to determine the relationship between the emissivity threshold interval and the temperature measurement interval.

[0139] Figure 7 A schematic diagram of a temperature measurement interval for maintaining temperature measurement consistency when the emissivity changes provided in an embodiment of the present application, such as Figure 7 As shown, when the emissivity of the object to be measured is between ε1-Δ and ε1+Δ, if one wants to maintain good consistency, the temperature measurement intervals are: [T_min1, T_max1] and [T_min2, T_max2].

[0140] At this time, if you want to make the emissivity maintain good temperature measurement consistency within the range of [ε1-Δ, ε1+Δ], you need to make the temperature measurement interval the intersection of [T_min1, T_max1] and [T_min2, T_max2], that is, [T_min2, T_max1].

[0141] Therefore, when predetermining the preset temperature rise condition, it is necessary to determine it based on the emissivity of the object to be measured and the corresponding temperature measurement range.

[0142] The embodiment of the present application takes into account that the temperature measuring device calculates the temperature based on the radiation intensity emitted by the object. Therefore, when the emissivity changes, even if the actual temperature of the object does not change, the radiation intensity measured by the temperature measuring device will be different, resulting in a large error in the final temperature measurement data. Therefore, in order to maintain the accuracy of the measurement result, when the emissivity is not within the preset emissivity threshold range, it is necessary to re-determine the correction function of the temperature measuring device to be calibrated to obtain a new correction factor to correct the voltage signal value of the temperature measuring device to be calibrated, thereby improving the accuracy of the wafer temperature field control and improving the quality of the wafer.

[0143] Figure 8 A schematic diagram of the structure of a temperature measurement consistency correction device provided in an embodiment of the present application is shown in FIG. Figure 8 As shown, the device includes: an acquisition module 801, a generation module 802, a correction module 803 and an acquisition module 804; wherein,

[0144] The acquisition module 801 is used to obtain the first original temperature data and the original voltage signal value measured at the target measurement position of the object to be measured by the temperature measuring device to be calibrated under the preset temperature rising conditions; the generation module 802 is used to generate the photoelectric conversion efficiency correction factor according to the first original temperature data and the correction function corresponding to the temperature measuring device to be calibrated; the correction function is obtained by fitting the temperature data collected at the same position point of the same object at multiple temperatures using the temperature measuring device to be calibrated and the standard temperature measuring device; the correction module 803 is used to correct the original voltage signal value using the photoelectric conversion efficiency correction factor to obtain the corrected voltage signal value; the acquisition module 804 is used to obtain the corrected temperature data based on the corrected voltage signal value.

[0145] On the basis of the above embodiment, the device also includes a construction module, which is used to use the temperature measuring device to be calibrated and the standard temperature measuring device to collect data at the same position of the same object at multiple temperatures, and obtain multiple second original temperature data collected by the temperature measuring device to be calibrated and multiple standard temperature data collected by the standard temperature measuring device; fit the multiple second original temperature data and the multiple standard temperature data to obtain fitting coefficients; and construct a correction function based on the fitting coefficients.

[0146] Based on the above embodiment, the correction function is as follows:

[0147] σ=a n *T n +a n-1 *T n-1 +a n-2 *T n-2 +…+a1*T 1 +a0

[0148] Wherein, σ represents the photoelectric conversion efficiency correction factor corresponding to the temperature measuring device to be calibrated, T represents the first original temperature data measured by the temperature measuring device to be calibrated, a0, a1…a n-1 , a n They represent the fitting coefficients of the polynomial, and n represents the degree of the polynomial.

[0149] On the basis of the above embodiment, the correction module 803 is specifically used to correct the original voltage signal through the photoelectric conversion function to obtain a corrected voltage signal value; the photoelectric conversion function is as follows:

[0150] V′=σ*V

[0151] Wherein, V′ represents the corrected voltage signal value corresponding to the original voltage signal value, V represents the original voltage signal value, and σ represents the photoelectric conversion efficiency correction factor corresponding to the temperature measuring device to be calibrated.

[0152] On the basis of the above embodiment, the obtaining module 804 is specifically used to calculate the corrected temperature data according to the corrected voltage signal value by using the Planck blackbody formula.

[0153] On the basis of the above embodiment, the device further comprises an emissivity acquisition module for acquiring the emissivity of the object to be measured; if the emissivity is not within a preset emissivity threshold range, a correction function of the temperature measuring device to be calibrated is re-determined.

[0154] It should be understood that the device corresponds to the above-mentioned temperature measurement consistency correction method embodiment and can execute the various steps involved in the above-mentioned method embodiment. The specific functions of the device can be found in the above description. To avoid repetition, the detailed description is appropriately omitted here. The device includes at least one software function module that can be stored in a memory in the form of software or firmware or solidified in the operating system (OS) of the device.

[0155] Fig. 9 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application, such as Fig. 9 As shown, the electronic device includes a processor 901 (processor), a memory 902 (memory) and a bus 903; wherein the processor 901 and the memory 902 communicate with each other through the bus 903. The processor 901 is used to call the program instructions in the memory 902 to execute the methods provided by the above-mentioned method embodiments.

[0156] The processor 901 can be an integrated circuit chip with signal processing capabilities. The above-mentioned processor 901 can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components. It can implement or execute various methods, steps and logic block diagrams disclosed in the embodiments of the present application. The general-purpose processor can be a microprocessor or the processor can also be any conventional processor, etc.

[0157] The memory 902 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable red-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, disk or optical disk.

[0158] This embodiment discloses a computer program product, which includes a computer program stored on a non-transitory computer-readable storage medium. The computer program includes program instructions. When the program instructions are executed by a computer, the computer can execute the methods provided by the above-mentioned method embodiments.

[0159] This embodiment provides a non-transitory computer-readable storage medium, which stores computer instructions, and the computer instructions enable the computer to execute the methods provided by the above-mentioned method embodiments.

[0160] In the embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interfaces, and the indirect coupling or communication connection of the devices or units can be electrical, mechanical or other forms.

[0161] In addition, the units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0162] Furthermore, the functional modules in the various embodiments of the present application may be integrated together to form an independent part, or each module may exist independently, or two or more modules may be integrated to form an independent part.

[0163] The above description is only an embodiment of the present application and is not intended to limit the protection scope of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A temperature measurement consistency correction method, characterized in that: The method comprises: Acquire first original temperature data and original voltage signal value measured at a target measurement position of the object to be measured by the temperature measuring device to be calibrated under a preset temperature rise condition; Generate a photoelectric conversion efficiency correction factor according to the first original temperature data and a correction function corresponding to the temperature measuring device to be calibrated; the correction function is obtained by fitting the temperature data collected at the same position of the same object at multiple temperatures using the temperature measuring device to be calibrated and the standard temperature measuring device; Correcting the original voltage signal value using the photoelectric conversion efficiency correction factor to obtain a corrected voltage signal value; Corrected temperature data is obtained based on the corrected voltage signal value.

2. The method according to claim 1, characterized in that The method further comprises: Using the temperature measuring device to be calibrated and the standard temperature measuring device to collect data from the same position of the same object at multiple temperatures, to obtain multiple second original temperature data collected by the temperature measuring device to be calibrated and multiple standard temperature data collected by the standard temperature measuring device; Perform fitting according to the plurality of second original temperature data and the plurality of standard temperature data to obtain fitting coefficients; The correction function is constructed based on the fitting coefficients.

3. The method according to claim 2, characterized in that The correction function is as follows: σ=a n *T n +a n-1 *T n-1 +a n-2 *T n-2 +…+a1*T 1 +a0 Wherein, σ represents the photoelectric conversion efficiency correction factor corresponding to the temperature measuring device to be calibrated, T represents the first original temperature data measured by the temperature measuring device to be calibrated, a0, a1…a n-1 , a n They represent the fitting coefficients of the polynomial, and n represents the degree of the polynomial.

4. The method according to claim 1, characterized in that The method of correcting the original voltage signal value by using the photoelectric conversion efficiency correction factor to obtain a corrected voltage signal value includes: Correcting the original voltage signal by using a photoelectric conversion function to obtain a corrected voltage signal value; The photoelectric conversion function is as follows: V′=σ*V Among them, V′ represents the corrected voltage signal value corresponding to the original voltage signal value, V represents the original voltage signal value, and σ represents the photoelectric conversion efficiency correction factor corresponding to the temperature measuring device to be calibrated.

5. The method according to claim 1, characterized in that The obtaining of corrected temperature data based on the corrected voltage signal value comprises: According to the corrected voltage signal value, the corrected temperature data is calculated using the Planck blackbody formula.

6. The method according to any one of claims 1 to 5, characterized in that: Before obtaining the first original temperature data and the original voltage signal value measured at the target measurement position of the object to be measured by the temperature measuring device to be calibrated under the preset temperature rise condition, the method further includes: Obtain the emissivity of the object to be measured; If the emissivity is not within the preset emissivity threshold range, the correction function of the temperature measuring device to be calibrated is re-determined.

7. A temperature measurement consistency correction device, characterized in that: The device comprises: An acquisition module, used for acquiring first original temperature data and original voltage signal value measured at a target measurement position of the object to be measured by the temperature measuring device to be calibrated under a preset temperature rise condition; A generating module, configured to generate a correction factor for photoelectric conversion efficiency according to the first original temperature data and a correction function corresponding to the temperature measuring device to be calibrated; the correction function is obtained by fitting the temperature data collected at the same position of the same object at multiple temperatures using the temperature measuring device to be calibrated and the standard temperature measuring device; A correction module, used to correct the original voltage signal value using the photoelectric conversion efficiency correction factor to obtain a corrected voltage signal value; An obtaining module is used to obtain corrected temperature data based on the corrected voltage signal value.

8. An electronic device, characterized in that: include: A processor and a memory, wherein the memory stores machine-readable instructions executable by the processor, and when the machine-readable instructions are executed by the processor, the method according to any one of claims 1 to 6 is performed.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer program instructions, and when the computer program instructions are executed by a processor, the method according to any one of claims 1 to 6 is executed.

10. A computer program product, characterized in that include: Computer program instructions, when executed by a processor, perform the method according to any one of claims 1 to 6.

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