Scattering parameter de-embedding method, device and equipment

Abstract

The invention discloses a scattering parameter de-embedding method, device and equipment, and relates to the technical field of semiconductors. The method comprises the following steps: obtaining n de-embedding test structural members; constructing a first ABCD matrix and a second ABCD matrix according to the first admittance and the second admittance; according to the third admittance, the fourth admittance and the length of each transmission line in the n transmission lines, constructing n third ABCD matrixes; the third admittance is the admittance between the unit length transmission line and the ground in the equivalent pi-type circuit corresponding to the unit length transmission line, and the fourth admittance is the admittance of the unit length transmission line; and according to the first ABCD matrix, the second ABCD matrix and the n third ABCD matrixes, solving to obtain a de-embedded ABCD matrix of the to-be-tested device, and converting the ABCD matrix of the to-be-tested device into scattering parameters. According to the embodiment of the invention, scattering parameter de-embedding can be more efficiently and flexibly realized, so that the overall scattering parameter de-embedding efficiency and precision can be effectively improved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and in particular relates to a scattering parameter de-embedding method, device and equipment. Background Art

[0002] Usually, since the characteristics of the DUT (Device Under Test) cannot be directly tested, an external connector or a transmission line is required to connect to the PAD (pad) to form the original device. Among them, PAD usually refers to the pad or contact point on the chip. The DUT and the above interconnection structure together constitute the original device, which is then connected to the measurement equipment for specific testing.

[0003] In the actual test process, it is usually necessary to de-embed the scattering parameters (S parameters) of the original device in order to obtain the required scattering parameters that meet the characteristics of the DUT. De-embedding is the process of eliminating the interconnection structure of the original device to obtain the DUT, so it is necessary to obtain the information of these interconnection structures through testing and calculation. However, when de-embedding the scattering parameters of the original device, there are often problems such as low efficiency, poor flexibility and low accuracy of scattering parameter de-embedding.

[0004] Based on this, the industry is still in urgent need of a new scattering parameter de-embedding solution to more efficiently and flexibly de-embed the scattering parameters of the original device, so as to obtain more accurate DUT scattering parameters. Summary of the invention

[0005] The embodiments of the present application provide a scattering parameter de-embedding method, apparatus, and device, which can more efficiently and flexibly implement scattering parameter de-embedding, thereby effectively improving the overall scattering parameter de-embedding efficiency and accuracy.

[0006] In a first aspect, an embodiment of the present application provides a scattering parameter de-embedding method, the scattering parameter de-embedding method comprising:

[0007] Obtain n de-embedding test structures, each of which includes a first GSG pad, a second GSG pad, and a transmission line, the transmission line is used to connect the first GSG pad and the second GSG pad that are spaced apart, and n is a positive integer greater than or equal to 2;

[0008] According to the first admittance and the second admittance, a first ABCD matrix corresponding to the first GSG pad and a second ABCD matrix corresponding to the second GSG pad are constructed; the first admittance is the admittance between the G pad and the S pad in the first GSG pad or the admittance between the G pad and the S pad in the second GSG pad, and the second admittance is the admittance between the transmission line and the S pad in the first GSG pad or the admittance between the transmission line and the S pad in the second GSG pad;

[0009] According to the third admittance, the fourth admittance and the length of each transmission line in the n transmission lines, n third ABCD matrices corresponding to the n transmission lines are constructed one by one; the third admittance is the admittance between the unit length transmission line and the ground in the equivalent π-type circuit corresponding to the unit length transmission line, the fourth admittance is the admittance of the unit length transmission line, the unit length transmission line is a target unit length transmission line obtained by dividing the transmission line, and the n transmission lines correspond one by one to the n de-embedding test structures;

[0010] According to the first ABCD matrix, the second ABCD matrix and n third ABCD matrices, the ABCD matrix of the device under test after de-embedding is obtained, and the ABCD matrix of the device under test is converted into scattering parameters.

[0011] In some possible implementations, a first ABCD matrix corresponding to the first GSG pad and a second ABCD matrix corresponding to the second GSG pad are constructed according to the first admittance and the second admittance, including:

[0012] According to the first admittance and the second admittance, the first ABCD matrix is ​​constructed as:

[0013] Among them, Y1 is the first admittance, Y2 is the second admittance;

[0014] According to the first admittance and the second admittance, the second ABCD matrix is ​​constructed as follows:

[0015]

[0016] In some possible implementations, n third ABCD matrices corresponding to the n transmission lines are constructed according to the third admittance, the fourth admittance, and the length of each transmission line in the n transmission lines, including:

[0017] According to the third admittance and the fourth admittance, the third ABCD matrix corresponding to the target transmission line is constructed as follows:

[0018]

[0019] Wherein, Y3 is the third admittance, Y4 is the fourth admittance, L0 is the target unit length, L is the length of the target transmission line, and the target transmission line is any one of the n transmission lines.

[0020] In some possible implementations, before solving the ABCD matrix of the device under test after de-embedding according to the first ABCD matrix, the second ABCD matrix, and n third ABCD matrices, and converting the ABCD matrix of the device under test into scattering parameters, the scattering parameter de-embedding method further includes:

[0021] Obtaining scattering parameters of n de-embedded test structures and original devices, where the original devices include the device under test;

[0022] Converting the scattering parameters of the n de-embedded test structures into ABCD matrices respectively, to obtain n fourth ABCD matrices corresponding to the n de-embedded test structures one by one; and converting the scattering parameters of the original device into ABCD matrices, to obtain a fifth ABCD matrix;

[0023] According to the first ABCD matrix, the second ABCD matrix and n third ABCD matrices, the ABCD matrix of the device under test after de-embedding is obtained by solving, and the ABCD matrix of the device under test is converted into scattering parameters, including:

[0024] According to the first ABCD matrix, the second ABCD matrix, n third ABCD matrices, n fourth ABCD matrices and the fifth ABCD matrix, the ABCD matrix of the device under test after de-embedding is obtained, and the ABCD matrix of the device under test is converted into scattering parameters.

[0025] In some possible implementations, solving the ABCD matrix of the de-embedded device under test according to the first ABCD matrix, the second ABCD matrix, n third ABCD matrices, n fourth ABCD matrices, and the fifth ABCD matrix includes:

[0026] According to the first ABCD matrix, the second ABCD matrix, n third ABCD matrices and n fourth ABCD matrices, n first target equation groups are constructed;

[0027] According to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix, a second target equation group is constructed;

[0028] According to the n first target equation groups, the admittance values ​​of the first admittance, the second admittance, the third admittance and the fourth admittance are obtained by solving;

[0029] According to the admittance values ​​of the first admittance, the second admittance, the third admittance and the fourth admittance, the second target equation group is solved to obtain the ABCD matrix of the device under test.

[0030] In some possible implementations, n first target equation groups are constructed based on the first ABCD matrix, the second ABCD matrix, n third ABCD matrices, and n fourth ABCD matrices, including:

[0031] According to the first ABCD matrix, the second ABCD matrix, the i-th third ABCD matrix among the n third ABCD matrices and the i-th fourth ABCD matrix among the n fourth ABCD matrices, the i-th first target equation group among the n first target equation groups is constructed as follows:

[0032]

[0033] Wherein, the value of i is any integer in the range of 2 to n; [Mi] is the i-th fourth ABCD matrix, [P Left ] is the first ABCD matrix, [P Right ] is the second ABCD matrix, is the i-th third ABCD matrix.

[0034] In some possible implementations, a second target equation group is constructed based on the first ABCD matrix, the second ABCD matrix, and the fifth ABCD matrix, including:

[0035] According to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix, the second target equation group is constructed as follows:

[0036] [A raw ]=[P Left ]×[L Left ]×[A DUT ]×[L Right ]×[P Right ]

[0037] Among them, [A raw ] is the fifth ABCD matrix, [P Left ] is the first ABCD matrix, [P Right ] is the second ABCD matrix, [A DUT ] is the ABCD matrix of the device under test; [L Left ] is the sixth ABCD matrix, which is the ABCD matrix corresponding to the transmission line of the first length in the original device; [L Right ] is the seventh ABCD matrix, which is the ABCD matrix corresponding to the second length of the transmission line in the original device, and the first length L Left With the second length L Right The sum of is the total length of the transmission line in the original device.

[0038] In some possible implementations, before constructing the second target equation group according to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix, the scattering parameter de-embedding method further includes:

[0039] Based on the third admittance, the fourth admittance and the first length, the sixth ABCD matrix is ​​constructed as follows:

[0040]

[0041] Based on the third admittance, the fourth admittance and the second length, the seventh ABCD matrix is ​​constructed as follows:

[0042]

[0043] Among them, L Left is the first length, L Right is the second length, Y3 is the third admittance, Y4 is the fourth admittance, and L0 is the target unit length.

[0044] Based on the same inventive concept, in a second aspect, an embodiment of the present application provides a scattering parameter de-embedding device, the scattering parameter de-embedding device comprising:

[0045] A first acquisition module is used to acquire n de-embedding test structures, each of which includes a first GSG pad, a second GSG pad, and a transmission line, the transmission line is used to connect the first GSG pad and the second GSG pad that are spaced apart, and n is a positive integer greater than or equal to 2;

[0046] A first construction module is used to construct a first ABCD matrix corresponding to the first GSG pad and a second ABCD matrix corresponding to the second GSG pad according to the first admittance and the second admittance; the first admittance is the admittance between the G pad and the S pad in the first GSG pad or the admittance between the G pad and the S pad in the second GSG pad, and the second admittance is the admittance between the transmission line and the S pad in the first GSG pad or the admittance between the transmission line and the S pad in the second GSG pad;

[0047] The second construction module is used to construct n third ABCD matrices corresponding to the n transmission lines one by one according to the third admittance, the fourth admittance and the length of each transmission line in the n transmission lines; the third admittance is the admittance between the unit length transmission line and the ground in the equivalent π-type circuit corresponding to the unit length transmission line, the fourth admittance is the admittance of the unit length transmission line, the unit length transmission line is a target unit length transmission line obtained by dividing the transmission line, and the n transmission lines correspond to the n de-embedding test structures one by one;

[0048] The first solving module is used to solve the ABCD matrix of the device under test after de-embedding according to the first ABCD matrix, the second ABCD matrix and n third ABCD matrices, and convert the ABCD matrix of the device under test into scattering parameters.

[0049] In a third aspect, an embodiment of the present application provides a scattering parameter de-embedding device, the scattering parameter de-embedding device comprising:

[0050] a processor and a memory storing computer program instructions;

[0051] When the processor executes the computer program instructions, the scattering parameter de-embedding method provided in any one of the above embodiments of the present application is implemented.

[0052] In a fourth aspect, an embodiment of the present application provides a computer storage medium, on which computer program instructions are stored. When the computer program instructions are executed by a processor, a scattering parameter de-embedding method as provided in any one of the above-mentioned embodiments of the present application is implemented.

[0053] In a fifth aspect, an embodiment of the present application provides a computer program product. When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device executes a scattering parameter de-embedding method as provided in any one of the above-mentioned embodiments of the present application.

[0054] The embodiment of the present application provides a scattering parameter de-embedding method, device and equipment, which obtains n de-embedding test structures, and then constructs a first ABCD matrix corresponding to the first GSG pad and a second ABCD matrix corresponding to the second GSG pad according to the first admittance and the second admittance; the first admittance is the admittance between the G pad and the S pad in the first GSG pad or the admittance between the G pad and the S pad in the second GSG pad, and the second admittance is the admittance between the transmission line and the S pad in the first GSG pad or the admittance between the transmission line and the S pad in the second GSG pad. And, according to the third admittance, the fourth admittance and the length of each transmission line in the n transmission lines, construct n third ABCD matrices corresponding to the n transmission lines one by one; the third admittance is the admittance between the unit length transmission line and the ground in the equivalent π-type circuit corresponding to the unit length transmission line, the fourth admittance is the admittance of the unit length transmission line, and the unit length transmission line is the target unit length transmission line obtained by dividing the transmission line. Finally, the ABCD matrix of the de-embedded device under test is obtained according to the first ABCD matrix, the second ABCD matrix and n third ABCD matrices, and the ABCD matrix of the device under test is converted into scattering parameters.

[0055] It can be seen from the above description that a scattering parameter de-embedding method, device and equipment of the embodiment of the present application provides multiple de-embedding test structures, and then divides the transmission line in the de-embedding test structure into multiple unit length transmission lines to construct an equivalent circuit of admittance, and constructs the first ABCD matrix corresponding to the corresponding GSG pad, the second ABCD matrix and the third ABCD matrix corresponding to the transmission line according to the equivalent first admittance, the second admittance, the third admittance and the fourth admittance, respectively, so that finally according to the first ABCD matrix, the second ABCD matrix and the n third ABCD matrices, the ABCD matrix of the device under test after de-embedding is jointly solved to complete the de-embedding process. Through the scattering parameter de-embedding method, device and equipment of the embodiment of the present application, the scattering parameter de-embedding of the transmission line and the GSG pad of any length can be realized more flexibly and accurately, so as to effectively improve the overall scattering parameter de-embedding efficiency and accuracy. In addition, the de-embedding test structure in the embodiment of the present application is simple, the wafer occupies a small area, and at the same time, it can fully achieve the effect of reducing the cost of scattering parameter de-embedding. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the technical solution of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0057] Figure 1 is a schematic structural diagram of an original device provided in an embodiment of the present application;

[0058] Figure 2 is a flowchart of a scattering parameter de-embedding method provided in an embodiment of the present application;

[0059] Figure 3 is a structural schematic diagram of a de-embedding test structure provided by an embodiment of the present application;

[0060] Figure 4 is a schematic diagram of an equivalent circuit of a de-embedding test structure provided in an embodiment of the present application;

[0061] Figure 5 is a schematic diagram of simulation results of a scattering parameter de-embedding method provided in an embodiment of the present application;

[0062] Figure 6 is a schematic diagram of simulation results of a scattering parameter de-embedding method provided by another embodiment of the present application;

[0063] Figure 7 is a structural schematic diagram of a scattering parameter de-embedding device provided in an embodiment of the present application;

[0064] Figure 8It is a schematic diagram of the structure of a scattering parameter de-embedding device provided in one embodiment of the present application. DETAILED DESCRIPTION

[0065] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, rather than to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by illustrating the examples of the present application.

[0066] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "include..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0067] It should be noted that in the embodiments of the present application, certain software, components, models and other existing solutions in the industry may be mentioned, and they should be regarded as exemplary. Their purpose is only to illustrate the feasibility of implementing the technical solution of the present application, but it does not mean that the applicant has or will necessarily use the solution.

[0068] As mentioned in the background technology section, the original device currently needs to go through the de-embedding process to obtain the characteristics of the DUT. De-embedding is the process of removing the interconnection structure of the original device to obtain the DUT, so the information of these interconnection structures needs to be obtained through testing and calculation. Figure 1 , Figure 1 Schematic diagram of the structure of the original device provided by an embodiment of the present application. Figure 1 As shown, the transmission lines LLeft and PADleft are cascaded on the left side of the DUT, and LRight and PADRight are cascaded on the right side. Therefore, it is necessary to obtain the relevant scattering parameter information of LLeft, LRight, PADleft, and PADRight to complete the de-embedding of the scattering parameters of the original device, thereby obtaining the required DUT scattering parameters.

[0069] Existing de-embedding solutions mainly include OPEN-SHORT (open circuit-short circuit), L-2L de-embedding and TRL (Thru Reflect Line, through reflection delay calibration) and other de-embedding methods. However, the above de-embedding methods have the following problems: First, OPEN-SHORT (open circuit-short circuit) is a lumped parameter de-embedding algorithm. This characterization method is only valid when the frequency is low. When the frequency is high, the de-embedding accuracy of this method is not ideal; second, L-2L is a de-embedding algorithm commonly used in the field of microwave radio frequency. The disadvantage of L-2L is that it needs to provide transmission lines with lengths of L and 2L respectively, and the length limit is large. For transmission lines of other lengths, this method is not applicable. Third, TRL (Thru Reflect Line, through reflection delay calibration) is a common calibration algorithm in the field of microwave radio frequency, but the TRL algorithm has restrictions on the frequency range and cannot cover the full frequency band calibration. In addition, it has many structures and will occupy a large amount of wafer area, thereby increasing the cost. At the same time, the calculation is more complicated.

[0070] Therefore, the industry is still in urgent need of a new scattering parameter de-embedding solution to more efficiently and flexibly de-embed the scattering parameters of the original device, so as to obtain more accurate DUT scattering parameters.

[0071] In view of the above, in order to solve the problems in the prior art, the embodiments of the present application provide a scattering parameter de-embedding method, device and apparatus. It should be noted that the embodiments provided in the present application are not intended to limit the scope of the present application.

[0072] The following first introduces the scattering parameter de-embedding method provided in the embodiment of the present application.

[0073] Figure 2 A schematic diagram of a scattering parameter de-embedding method according to an embodiment of the present application is shown. The scattering parameter de-embedding method is applied to an electronic device, which may include a server or a user terminal. Figure 2 As shown, the scattering parameter de-embedding method includes the following steps:

[0074] S210, obtaining n de-embedding test structures, each of which includes a first GSG pad, a second GSG pad, and a transmission line, the transmission line is used to connect the first GSG pad and the second GSG pad that are spaced apart, and n is a positive integer greater than or equal to 2;

[0075] S220, constructing a first ABCD matrix corresponding to the first GSG pad and a second ABCD matrix corresponding to the second GSG pad according to the first admittance and the second admittance; the first admittance is the admittance between the G pad and the S pad in the first GSG pad or the admittance between the G pad and the S pad in the second GSG pad, and the second admittance is the admittance between the transmission line and the S pad in the first GSG pad or the admittance between the transmission line and the S pad in the second GSG pad;

[0076] S230, constructing n third ABCD matrices corresponding to the n transmission lines one-to-one according to the third admittance, the fourth admittance and the length of each transmission line in the n transmission lines; the third admittance is the admittance between the unit-length transmission line and the ground in the equivalent π-type circuit corresponding to the unit-length transmission line, the fourth admittance is the admittance of the unit-length transmission line, the unit-length transmission line is a target unit-length transmission line obtained by dividing the transmission line, and the n transmission lines correspond to the n de-embedding test structures one-to-one;

[0077] S240, solving the ABCD matrix of the device under test after de-embedding according to the first ABCD matrix, the second ABCD matrix and n third ABCD matrices, and converting the ABCD matrix of the device under test into scattering parameters.

[0078] The embodiment of the present application provides a scattering parameter de-embedding method, which obtains n de-embedding test structures, and then constructs a first ABCD matrix corresponding to the first GSG pad and a second ABCD matrix corresponding to the second GSG pad according to the first admittance and the second admittance; the first admittance is the admittance between the G pad and the S pad in the first GSG pad or the admittance between the G pad and the S pad in the second GSG pad, and the second admittance is the admittance between the transmission line and the S pad in the first GSG pad or the admittance between the transmission line and the S pad in the second GSG pad. And, according to the third admittance, the fourth admittance and the length of each transmission line in the n transmission lines, construct n third ABCD matrices corresponding to the n transmission lines one by one; the third admittance is the admittance between the unit length transmission line and the ground in the equivalent π-type circuit corresponding to the unit length transmission line, the fourth admittance is the admittance of the unit length transmission line, and the unit length transmission line is the target unit length transmission line obtained by dividing the transmission line. Finally, the ABCD matrix of the de-embedded device under test is obtained according to the first ABCD matrix, the second ABCD matrix and n third ABCD matrices, and the ABCD matrix of the device under test is converted into scattering parameters.

[0079] It can be seen from the above description that a scattering parameter de-embedding method of an embodiment of the present application provides multiple de-embedding test structures, and then divides the transmission line in the de-embedding test structure into multiple unit length transmission lines to construct an equivalent circuit of admittance, and constructs the first ABCD matrix corresponding to the corresponding GSG pad, the second ABCD matrix and the third ABCD matrix corresponding to the transmission line according to the equivalent first admittance, the second admittance, the third admittance and the fourth admittance, respectively, so that finally according to the first ABCD matrix, the second ABCD matrix and the n third ABCD matrices, the ABCD matrix of the device under test after de-embedding is jointly solved to complete the de-embedding process. Through the scattering parameter de-embedding method of the embodiment of the present application, the scattering parameter de-embedding of the transmission line and the GSG pad of any length can be realized more flexibly and accurately, so as to effectively improve the overall scattering parameter de-embedding efficiency and accuracy. In addition, the de-embedding test structure in the embodiment of the present application is simple, the wafer occupies a small area, and at the same time, it can fully achieve the effect of reducing the cost of scattering parameter de-embedding.

[0080] The specific implementation of the above steps 210 to 240 is described in detail below.

[0081] In S210, in a specific implementation, n de-embedding test structures are obtained, each of which includes a first GSG pad, a second GSG pad, and a transmission line, the transmission line is used to connect the first GSG pad and the second GSG pad that are spaced apart, and n is a positive integer greater than or equal to 2.

[0082] In order to facilitate the understanding of the de-embedding test structure provided in this application, please refer to the following Figure 3 , Figure 3 is a schematic diagram of the structure of a de-embedding test structure provided by an embodiment of the present application. Figure 3 As shown, two or more may be pre-made. Figure 2 The de-embedding test structures shown in the figure each consist of a GSG (Ground Signal Ground) PAD on the left, a transmission line Line and a GSG PAD on the right.

[0083] The left GSG PAD in the same de-embedding test structure may correspond to the first GSG pad, and the right GSG PAD in the same de-embedding test structure may correspond to the second GSG pad. Figure 3 For L1, L2 or Ln, the lengths of the transmission lines in different de-embedding test structures may be different, and no strict limitation is imposed here.

[0084] In S220, during specific implementation, a first ABCD matrix corresponding to the first GSG pad and a second ABCD matrix corresponding to the second GSG pad are constructed based on the first admittance and the second admittance.

[0085] The above-mentioned first admittance is the admittance between the G pad and the S pad in the first GSG pad or the admittance between the G pad and the S pad in the second GSG pad, and the second admittance is the admittance between the transmission line and the S pad in the first GSG pad or the admittance between the transmission line and the S pad in the second GSG pad.

[0086] In the present embodiment, the admittance between the G pad and the S pad of the above-mentioned GSG pad is equivalent to the above-mentioned first admittance, and the admittance of the part between the above-mentioned S pad and the above-mentioned transmission line is equivalent to the above-mentioned second admittance, so that the connection relationship between the pads and the transmission lines can be fully considered when constructing the above-mentioned first ABCD matrix and the second ABCD matrix, so that the obtained first ABCD matrix and the second ABCD matrix have higher accuracy, which in turn helps to more accurately realize the subsequent extraction of scattering parameters of the pads and transmission lines, so as to obtain accurate scattering parameters of the device under test after de-embedding.

[0087] In S230, during specific implementation, n third ABCD matrices corresponding to the n transmission lines are constructed according to the third admittance, the fourth admittance and the length of each of the n transmission lines.

[0088] The third admittance is the admittance between the unit length transmission line and the ground in the equivalent π-type circuit corresponding to the unit length transmission line. The fourth admittance is the admittance of the unit length transmission line. The unit length transmission line is the target unit length transmission line obtained by dividing the transmission line. The n transmission lines correspond one-to-one to the n de-embedding test structures.

[0089] In this embodiment, the transmission line is divided into transmission lines according to the target unit length, and then an equivalent π-type circuit of the divided unit length transmission line is constructed. Based on the third admittance and the fourth admittance in the equivalent π-type circuit of the unit length transmission line, n third ABCD matrices corresponding to n transmission lines in n de-embedded test structures are constructed.

[0090] In this way, the embodiment of the present application fully overcomes the shortcomings of the traditional L-2L de-embedding solution. By using 2 or more transmission lines with GSG pads of any different lengths, the scattering parameters of the transmission lines and GSG pads of any length in the original period can be extracted in the subsequent process, thereby effectively improving the overall scattering parameter de-embedding efficiency and accuracy.

[0091] In order to facilitate understanding of the specific construction methods of the first ABCD matrix, the second ABCD matrix and the n third ABCD matrices of the present application, please refer to the following Figure 4 , Figure 4 is a schematic diagram of an equivalent circuit of a de-embedding test structure provided in an embodiment of the present application. Figure 4 As shown, Y1 is the first admittance, Y2 is the second admittance, Y3 is the third admittance, and Y4 is the fourth admittance.

[0092] Combination Figure 4 The first GSG pad P shown in Left , the second GSG pad P Right The equivalent circuit of the first ABCD matrix corresponding to the first GSG pad and the second ABCD matrix corresponding to the second GSG pad constructed according to the first admittance and the second admittance may include:

[0093] According to the first admittance and the second admittance, the first ABCD matrix is ​​constructed as shown in formula (1):

[0094]

[0095] Among them, Y1 is the first admittance, Y2 is the second admittance;

[0096] According to the first admittance and the second admittance, the second ABCD matrix is ​​constructed as shown in formula (2):

[0097]

[0098] And, continue to combine Figure 4 As shown, Figure 4 The length of the target transmission line Line is L, and the length of the unit length transmission line Line0 is the target unit length L0. Figure 4 The equivalent π-type circuit of the unit length transmission line Line0 shown in the figure, the n third ABCD matrices corresponding to the n transmission lines are constructed according to the third admittance, the fourth admittance and the length of each transmission line in the n transmission lines, and specifically may include:

[0099] According to the third admittance and the fourth admittance, the third ABCD matrix corresponding to the target transmission line is constructed and can be seen in formula (3):

[0100]

[0101] Wherein, Y3 is the third admittance, Y4 is the fourth admittance, L0 is the target unit length, L is the length of the target transmission line, and the target transmission line is any one of the n transmission lines.

[0102] In this embodiment, the target transmission line Line with a length of L is equivalent to a cascade of L / L0 unit-length transmission lines Line0 with a length of L0, where L0 is a target unit length of any custom length. Therefore, the third ABCD matrix corresponding to the target transmission line Line can be obtained according to the equivalent π-type circuit corresponding to the unit-length transmission line Line0.

[0103] In this way, when it is necessary to extract scattering parameters of transmission lines of different lengths in the original device to complete de-embedding in the future, the ABCD matrix of transmission lines of different lengths can be constructed according to the equivalent π-type circuit corresponding to the above-mentioned unit length transmission line Line0, so as to flexibly and efficiently complete the scattering parameter extraction corresponding to the transmission line without being restricted by the actual length of the transmission line in the original device.

[0104] In S240, during specific implementation, the ABCD matrix of the de-embedded device under test is obtained by solving the first ABCD matrix, the second ABCD matrix and the n third ABCD matrices, and the ABCD matrix of the device under test is converted into scattering parameters.

[0105] According to some embodiments of the present application, optionally, before solving the ABCD matrix of the device under test after de-embedding according to the first ABCD matrix, the second ABCD matrix and n third ABCD matrices, and converting the ABCD matrix of the device under test into scattering parameters, the scattering parameter de-embedding method may further include:

[0106] Obtaining scattering parameters of n de-embedded test structures and original devices, where the original devices may include a device under test;

[0107] Converting the scattering parameters of the n de-embedded test structures into ABCD matrices respectively, to obtain n fourth ABCD matrices corresponding to the n de-embedded test structures one by one; and converting the scattering parameters of the original device into ABCD matrices, to obtain a fifth ABCD matrix;

[0108] Solving the ABCD matrix of the de-embedded device under test according to the first ABCD matrix, the second ABCD matrix, and n third ABCD matrices, and converting the ABCD matrix of the device under test into scattering parameters may include:

[0109] According to the first ABCD matrix, the second ABCD matrix, n third ABCD matrices, n fourth ABCD matrices and the fifth ABCD matrix, the ABCD matrix of the device under test after de-embedding is obtained, and the ABCD matrix of the device under test is converted into scattering parameters.

[0110] In a specific implementation, a vector network analyzer may be used to measure the scattering parameters of the n de-embedded test structures and the scattering parameters of the original device, thereby obtaining the scattering parameters of the n de-embedded test structures and the original device.

[0111] The original device includes a device under test (DUT), a transmission line and a GSG pad cascaded on one side of the DUT, and a transmission line and a GSG pad cascaded on the other side of the DUT. The two GSG pads in the original device may be equivalent to the first GSG pad and the second GSG pad, and the transmission line used in the original device has substantially the same material properties as the transmission line in the n de-embedded test structures, such as the size of the cross section of the transmission line, the material used for the transmission line, the process of the transmission line, etc.

[0112] After obtaining the scattering parameters of the n de-embedded test structures and the original device, the scattering parameters of the n de-embedded test structures are respectively converted into ABCD matrices to obtain n fourth ABCD matrices corresponding to the n de-embedded test structures, and the n fourth ABCD matrices are respectively [M1], [M2]…[Mn]. And, the scattering parameters of the original device are converted into ABCD matrices to obtain a fifth ABCD matrix, and the fifth ABCD matrix is ​​[A raw ].

[0113] In this way, the ABCD matrix of the de-embedded device under test can be obtained based on the first ABCD matrix, the second ABCD matrix, n third ABCD matrices, n fourth ABCD matrices and the fifth ABCD matrix, thereby converting the obtained ABCD matrix of the device under test into scattering parameters to achieve scattering parameter de-embedding.

[0114] According to some embodiments of the present application, optionally, more specifically, in order to fully realize the solution of the ABCD matrix of the device under test, the above-mentioned solution to obtain the ABCD matrix of the de-embedded device under test according to the first ABCD matrix, the second ABCD matrix, the n third ABCD matrices, the n fourth ABCD matrices and the fifth ABCD matrix may include:

[0115] According to the first ABCD matrix, the second ABCD matrix, n third ABCD matrices and n fourth ABCD matrices, n first target equation groups are constructed;

[0116] According to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix, a second target equation group is constructed;

[0117] According to the n first target equation groups, the admittance values ​​of the first admittance, the second admittance, the third admittance and the fourth admittance are obtained by solving;

[0118] According to the admittance values ​​of the first admittance, the second admittance, the third admittance and the fourth admittance, the second target equation group is solved to obtain the ABCD matrix of the device under test.

[0119] More specifically, the n first target equation groups constructed according to the first ABCD matrix, the second ABCD matrix, the n third ABCD matrices and the n fourth ABCD matrices may include:

[0120] According to the first ABCD matrix, the second ABCD matrix, the i-th third ABCD matrix among the n third ABCD matrices and the i-th fourth ABCD matrix among the n fourth ABCD matrices, the i-th first target equation group among the n first target equation groups is constructed, as shown in formula (4):

[0121]

[0122] Wherein, the value of i is any integer in the range of 2 to n; [Mi] is the i-th fourth ABCD matrix, [P Left ] is the first ABCD matrix, [P Right ] is the second ABCD matrix, is the i-th third ABCD matrix.

[0123] Specifically, taking the first, second and nth first objective equation groups as examples, the constructed first objective equation groups can be referred to the following equations (5), (6) and (7) respectively:

[0124]

[0125] Among them, [M1] is the first fourth ABCD matrix, is the first third ABCD matrix, and L1 is the length of the transmission line of the first de-embedding test structure among the above n de-embedding test structures.

[0126]

[0127] Among them, [M2] is the second fourth ABCD matrix, is the second third ABCD matrix, and L2 is the length of the transmission line of the second de-embedding test structure among the above n de-embedding test structures.

[0128]

[0129] Where [Mn] is the nth fourth ABCD matrix, is the nth third ABCD matrix, and Ln is the length of the transmission line of the nth de-embedding test structure among the above n de-embedding test structures.

[0130] By analogy, the above n first target equation groups can be obtained. Since each first target equation group is an ABCD matrix equation, and each de-embedded test structure is symmetrical, four equations can be decomposed from one first target equation group. Through two or more first target equation groups, the unknowns in the above first target equation group can be solved: the first admittance Y1, the second admittance Y2, the third admittance Y3, and the fourth admittance Y4.

[0131] Among them, when solving the above unknowns, the fsolve() function of MATLAB software can be used for solving, and this embodiment does not make strict restrictions here.

[0132] According to some embodiments of the present application, optionally, considering the interconnection structure between the device under test, the transmission line and the GSG pad between the actual original devices, the second target equation group constructed according to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix may include:

[0133] According to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix, the second target equation group is constructed as shown in formula (8):

[0134] [A raw ]=[P Left ]×[L Left ]×[A DUT ]×[L Right ]×[P Right ] (8)

[0135] Among them, [A raw ] is the fifth ABCD matrix, [P Left ] is the first ABCD matrix, [P Right ] is the second ABCD matrix, [A DUT ] is the ABCD matrix of the device under test; [L Left ] is the sixth ABCD matrix, which is the ABCD matrix corresponding to the transmission line of the first length in the original device; [L Right ] is the seventh ABCD matrix, which is the ABCD matrix corresponding to the second length of the transmission line in the original device, and the first length L Left With the second length L Right The sum of is the total length of the transmission line in the original device.

[0136] According to some embodiments of the present application, optionally, before constructing the second target equation group according to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix, the scattering parameter de-embedding method may further include:

[0137] Based on the third admittance, the fourth admittance and the first length, the sixth ABCD matrix is ​​constructed as shown in formula (9):

[0138]

[0139] Based on the third admittance, the fourth admittance and the second length, the seventh ABCD matrix is ​​constructed as shown in formula (10):

[0140]

[0141] Among them, L Left is the first length, L Right is the second length, Y3 is the third admittance, Y4 is the fourth admittance, and L0 is the target unit length.

[0142] In this embodiment, the ABCD matrix corresponding to the unit length transmission line [Line0] is determined according to the third admittance and the fourth admittance. On this basis, combined with the transmission line lengths on both sides of the DUT in the actual original device, the ABCD matrices corresponding to the transmission lines on both sides are determined: the sixth ABCD matrix [L Left ], and the seventh ABCD matrix [L Right ].

[0143] Thus, when the second target equation group is solved according to the admittance values ​​of the first admittance, the second admittance, the third admittance and the fourth admittance, the actual first ABCD matrix [P Left ] and the second ABCD matrix [P Right ].

[0144] And, based on the third admittance Y3 obtained by solving, and the admittance value of the fourth admittance Y4 and the ABCD matrix [Line0] corresponding to the unit length transmission line. In this way, based on the ABCD matrix [Line0] corresponding to the unit length transmission line, combined with the transmission line lengths on both sides of the DUT in the actual original device, the sixth ABCD matrix [L Left ], and the seventh ABCD matrix [L Right ].

[0145] Thus, the fifth ABCD matrix [A raw ] is the ABCD matrix corresponding to the scattering parameters of the original device obtained by the test, which is also a known quantity. In this case, the fifth ABCD matrix [A raw ] and the first ABCD matrix obtained by solving [P Left ], the second ABCD matrix [P Right ], the sixth ABCD matrix [L Left], and the seventh ABCD matrix [L Right ] into the second target equation group, the ABCD equation of the device under test DUT [A DUT ], and then [A DUT ] is converted into scattering parameters, thereby efficiently and accurately completing the scattering parameter de-embedding of the transmission line and GSG pad of any length in the original device, and solving for the required DUT scattering parameters.

[0146] In order to facilitate understanding of the scattering parameter de-embedding method provided by the above embodiment, the above method is described below with reference to a specific simulation embodiment. Figure 5 is a schematic diagram of simulation results of a scattering parameter de-embedding method provided in an embodiment of the present application; Figure 6 It is a schematic diagram of simulation results of a scattering parameter de-embedding method provided in another embodiment of the present application.

[0147] exist Figure 5 In the present invention, de-embedding test structures with transmission line lengths of 400um and 280um are used, and the aforementioned target unit length L0=280um is set to perform actual tests, scattering de-embedding calculations and simulation tests. Figure 5 The solid lines in the figure show the scattering parameter curves of the transmission line obtained by measurement at different frequencies (shown by the solid line, corresponding to Line measuredeembed), the scattering parameter curve of the transmission line obtained by simulation using the scattering parameter de-embedding method of an embodiment of the present application (shown by the dotted line, corresponding to Line simulated), and the scattering parameter curve of the transmission line and the GSG pad interconnection structure obtained by actual measurement (shown by the dot-dash line, corresponding to Line measure with GSG).

[0148] like Figure 5 It can be seen from the displayed results that the scattering parameter curve obtained by solving the scattering parameter de-embedding method provided in the embodiment of the present application is basically consistent with the scattering parameter curve determined by simulation, which can verify that the scattering parameter de-embedding method provided in the embodiment of the present application has a more accurate scattering parameter de-embedding effect.

[0149] exist Figure 6 In the present invention, de-embedding test structures with transmission line lengths of 400 um and 280 um are used, and the aforementioned target unit length L0=280 um is set to perform actual testing and scattering de-embedding calculations. Figure 6 The solid line in shows the scattering parameter curve of the 160um transmission line and GSG pad interconnection structure obtained based on the solution of the present application at different frequencies (shown by the solid line, corresponding to Calculate 160um Line with_GSG), Figure 6The dotted line in FIG. 1 shows the scattering parameter curve of the 160um transmission line and GSG pad interconnection structure obtained by actual measurement at different frequencies (the dotted line corresponds to Measure 160um Line with GSG).

[0150] like Figure 6 It can be seen from the displayed results that the scattering parameter curve obtained by the scattering parameter de-embedding method provided in the embodiment of the present application is basically consistent with the scattering parameter curve obtained by actual measurement. It can be verified that the scattering parameter de-embedding method provided in the embodiment of the present application can effectively calculate the scattering parameters of the transmission line and GSG pad, and has a relatively accurate scattering parameter de-embedding effect.

[0151] In general, the embodiment of the present application overcomes the shortcomings of the traditional L-2L method. By using two or more transmission lines with GSG pads of any length, the scattering parameter extraction of any length of transmission line and GSG pad can be realized. The test is relatively flexible and simple. The de-embedding algorithm of the embodiment of the present application is simple and the de-embedding accuracy is high, which can effectively improve the overall scattering parameter de-embedding efficiency and accuracy. In addition, the de-embedding test structure in the embodiment of the present application is simple, the wafer occupies a small area, and at the same time, it can fully achieve the effect of reducing the scattering parameter de-embedding cost.

[0152] It should be added that the scattering parameter de-embedding method of the embodiment of the present application can be used for symmetrical or asymmetrical DUT structures. In addition, the above embodiment of the present application can also be applied to de-embedding scenarios such as coaxial de-embedding calibration, and the specific application scenario of the scattering parameter de-embedding of the present application is not strictly limited.

[0153] Based on the scattering parameter de-embedding method provided in the above embodiment, for the same inventive concept, the present application also provides a scattering parameter de-embedding device corresponding to the above scattering parameter de-embedding method. Figure 7 The scattering parameter de-embedding device is introduced in detail.

[0154] Figure 7 A schematic structural diagram of a scattering parameter de-embedding device provided in an embodiment of the present application is shown.

[0155] Figure 7 The scattering parameter de-embedding device 700 shown comprises:

[0156] A first acquisition module 710 is used to acquire n de-embedding test structures, each of which includes a first GSG pad, a second GSG pad, and a transmission line, the transmission line is used to connect the first GSG pad and the second GSG pad that are spaced apart, and n is a positive integer greater than or equal to 2;

[0157] A first construction module 720 is used to construct a first ABCD matrix corresponding to the first GSG pad and a second ABCD matrix corresponding to the second GSG pad according to the first admittance and the second admittance; the first admittance is the admittance between the G pad and the S pad in the first GSG pad or the admittance between the G pad and the S pad in the second GSG pad, and the second admittance is the admittance between the transmission line and the S pad in the first GSG pad or the admittance between the transmission line and the S pad in the second GSG pad;

[0158] The second construction module 730 is used to construct n third ABCD matrices corresponding to the n transmission lines one by one according to the third admittance, the fourth admittance and the length of each transmission line in the n transmission lines; the third admittance is the admittance between the unit length transmission line and the ground in the equivalent π-type circuit corresponding to the unit length transmission line, the fourth admittance is the admittance of the unit length transmission line, the unit length transmission line is a target unit length transmission line obtained by dividing the transmission line, and the n transmission lines correspond to the n de-embedding test structures one by one;

[0159] The first solving module 740 is used to solve the ABCD matrix of the de-embedded device under test according to the first ABCD matrix, the second ABCD matrix and n third ABCD matrices, and convert the ABCD matrix of the device under test into scattering parameters.

[0160] It can be seen from the above description that a scattering parameter de-embedding device provided in an embodiment of the present application provides a plurality of de-embedding test structures by setting corresponding functional modules, and then divides the transmission line in the de-embedding test structure into a plurality of unit length transmission lines to construct an equivalent circuit of admittance, and respectively constructs the first ABCD matrix corresponding to the corresponding GSG pad, the second ABCD matrix and the third ABCD matrix corresponding to the transmission line according to the equivalent first admittance, the second admittance, the third admittance and the fourth admittance, so that finally, according to the first ABCD matrix, the second ABCD matrix and the n third ABCD matrices, the ABCD matrix of the device under test after de-embedding is jointly solved to complete the de-embedding process. Through the scattering parameter de-embedding device of the embodiment of the present application, the scattering parameter de-embedding of the transmission line and the GSG pad of any length can be realized more flexibly and accurately, so as to effectively improve the overall scattering parameter de-embedding efficiency and accuracy. In addition, the de-embedding test structure in the embodiment of the present application is simple, the wafer occupies a small area, and at the same time, it can fully achieve the effect of reducing the cost of scattering parameter de-embedding.

[0161] According to some embodiments of the present application, optionally, the first construction module 720 may include:

[0162] The first construction submodule can be used to construct a first ABCD matrix according to the first admittance and the second admittance:

[0163] Among them, Y1 is the first admittance, Y2 is the second admittance;

[0164] The second construction submodule can be used to construct a second ABCD matrix according to the first admittance and the second admittance:

[0165]

[0166] According to some embodiments of the present application, optionally, the second construction module 730 may include: constructing a third ABCD matrix corresponding to the target transmission line according to the third admittance and the fourth admittance:

[0167]

[0168] Wherein, Y3 is the third admittance, Y4 is the fourth admittance, L0 is the target unit length, L is the length of the target transmission line, and the target transmission line is any one of the n transmission lines.

[0169] According to some embodiments of the present application, optionally, before solving the ABCD matrix of the device under test after de-embedding according to the first ABCD matrix, the second ABCD matrix and n third ABCD matrices, and converting the ABCD matrix of the device under test into scattering parameters, the scattering parameter de-embedding device may further include:

[0170] A second acquisition module may be used to acquire scattering parameters of n de-embedded test structures and original devices, where the original devices may include a device to be tested;

[0171] The first conversion module may be used to convert the scattering parameters of the n de-embedded test structures into ABCD matrices respectively, to obtain n fourth ABCD matrices corresponding to the n de-embedded test structures one by one; and convert the scattering parameters of the original device into the ABCD matrix, to obtain a fifth ABCD matrix;

[0172] The first solving module 740 may include: solving the ABCD matrix of the de-embedded device under test according to the first ABCD matrix, the second ABCD matrix, n third ABCD matrices, n fourth ABCD matrices and the fifth ABCD matrix, and converting the ABCD matrix of the device under test into scattering parameters.

[0173] According to some embodiments of the present application, optionally, solving the ABCD matrix of the de-embedded device under test according to the first ABCD matrix, the second ABCD matrix, n third ABCD matrices, n fourth ABCD matrices and the fifth ABCD matrix may include:

[0174] The third construction submodule can be used to construct n first target equation groups according to the first ABCD matrix, the second ABCD matrix, n third ABCD matrices and n fourth ABCD matrices;

[0175] The fourth construction submodule can be used to construct a second target equation group according to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix;

[0176] A first solving submodule can be used to solve the admittance values ​​of the first admittance, the second admittance, the third admittance and the fourth admittance according to the n first target equation groups;

[0177] The second solving submodule can be used to solve the second target equation group to obtain the ABCD matrix of the device under test according to the admittance values ​​of the first admittance, the second admittance, the third admittance and the fourth admittance.

[0178] According to some embodiments of the present application, optionally, the third construction submodule may be specifically used to construct the i-th first target equation group among the n first target equation groups according to the first ABCD matrix, the second ABCD matrix, the i-th third ABCD matrix among the n third ABCD matrices, and the i-th fourth ABCD matrix among the n fourth ABCD matrices:

[0179]

[0180] Wherein, the value of i is any integer in the range of 2 to n; [Mi] is the i-th fourth ABCD matrix, [P Left ] is the first ABCD matrix, [P Right ] is the second ABCD matrix, is the i-th third ABCD matrix.

[0181] According to some embodiments of the present application, optionally, the fourth construction submodule may be specifically used to construct a second target equation group according to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix:

[0182] [A raw ]=[P Left ]×[L Left ]×[A DUT ]×[L Right ]×[P Right ]

[0183] Among them, [A raw ] is the fifth ABCD matrix, [P Left ] is the first ABCD matrix, [P Right ] is the second ABCD matrix, [A DUT] is the ABCD matrix of the device under test; [L Left ] is the sixth ABCD matrix, which is the ABCD matrix corresponding to the transmission line of the first length in the original device; [L Right ] is the seventh ABCD matrix, which is the ABCD matrix corresponding to the second length of the transmission line in the original device, and the first length L Left With the second length L Right The sum of is the total length of the transmission line in the original device.

[0184] According to some embodiments of the present application, optionally, before constructing the second target equation group according to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix, the scattering parameter de-embedding device may further include:

[0185] The third construction module can be used to construct a sixth ABCD matrix based on the third admittance, the fourth admittance and the first length:

[0186]

[0187] The fourth construction module can be used to construct a seventh ABCD matrix based on the third admittance, the fourth admittance and the second length:

[0188]

[0189] Among them, L Left is the first length, L Right is the second length, Y3 is the third admittance, Y4 is the fourth admittance, and L0 is the target unit length.

[0190] Based on the scattering parameter de-embedding method provided in the above embodiment, for the same inventive concept, the present application also provides a scattering parameter de-embedding device corresponding to the above scattering parameter de-embedding method. Figure 8 The scattering parameter de-embedding equipment is introduced in detail.

[0191] See below Figure 8 , Figure 8 It is a schematic diagram of the structure of a scattering parameter de-embedding device provided in one embodiment of the present application.

[0192] The scattering parameter de-embedding device may include a processor 801 and a memory 802 storing computer program instructions.

[0193] Specifically, the processor 801 may include a central processing unit (CPU), or an application specific integrated circuit (ASIC), or may be configured to implement one or more integrated circuits of the embodiments of the present application.

[0194] The memory 802 may include a large capacity memory for data or instructions. By way of example and not limitation, the memory 802 may include a hard disk drive (HDD), a floppy disk drive, a flash memory, an optical disk, a magneto-optical disk, a magnetic tape, or a universal serial bus (USB) drive or a combination of two or more of these. In appropriate cases, the memory 802 may include a removable or non-removable (or fixed) medium. In appropriate cases, the memory 802 may be inside or outside the integrated gateway disaster recovery device. In a specific embodiment, the memory 802 is a non-volatile solid-state memory.

[0195] The memory may include read-only memory (ROM), random access memory (RAM), magnetic disk storage media devices, optical storage media devices, flash memory devices, electrical, optical or other physical / tangible memory storage devices. Thus, typically, the memory includes one or more tangible (non-transitory) computer-readable storage media (e.g., memory devices) encoded with software including computer-executable instructions, and when the software is executed (e.g., by one or more processors), it is operable to perform the operations described with reference to the method according to an aspect of the present disclosure.

[0196] The processor 801 implements any one of the scattering parameter de-embedding methods in the above embodiments by reading and executing computer program instructions stored in the memory 802 .

[0197] In one example, the data scattering parameter de-embedding device may further include a communication interface 803 and a bus 810. Figure 8 As shown, the processor 801, the memory 802, and the communication interface 803 are connected via a bus 810 and communicate with each other.

[0198] The communication interface 803 is mainly used to implement communication between various modules, devices, units and / or equipment in the embodiments of the present application.

[0199] The bus 810 includes hardware, software, or both, coupling the components of the scattering parameter de-embedding device to each other. By way of example and not limitation, the bus may include an accelerated graphics port (AGP) or other graphics bus, an enhanced industry standard architecture (EISA) bus, a front side bus (FSB), a hypertransport (HT) interconnect, an industry standard architecture (ISA) bus, an infinite bandwidth interconnect, a low pin count (LPC) bus, a memory bus, a micro channel architecture (MCA) bus, a peripheral component interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a serial advanced technology attachment (SATA) bus, a video electronics standard association local (VLB) bus, or other suitable buses or a combination of two or more of the above. Where appropriate, the bus 810 may include one or more buses. Although the embodiments of the present application describe and illustrate specific buses, the present application contemplates any suitable bus or interconnect.

[0200] The scattering parameter de-embedding device executes the scattering parameter de-embedding method in the embodiment of the present application, thereby realizing the scattering parameter de-embedding method described in the embodiment of the present application.

[0201] In addition, in combination with the scattering parameter de-embedding method in the above embodiment, the embodiment of the present application can provide a computer storage medium for implementation. The computer storage medium stores computer program instructions; when the computer program instructions are executed by a processor, any one of the scattering parameter de-embedding methods in the above embodiment is implemented.

[0202] Based on the scattering parameter de-embedding method in the above embodiment, an embodiment of the present application provides a computer program product. When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device executes the scattering parameter de-embedding method provided in any one of the above embodiments of the present application.

[0203] It should be clear that the present application is not limited to the specific configuration and processing described above and shown in the figures. For the sake of simplicity, a detailed description of the known method is omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of the present application is not limited to the specific steps described and shown, and those skilled in the art can make various changes, modifications and additions, or change the order between the steps after understanding the spirit of the present application.

[0204] The functional blocks shown in the above-described block diagram can be implemented as hardware, software, firmware or a combination thereof. When implemented in hardware, it can be, for example, an electronic circuit, an application specific integrated circuit (ASIC), appropriate firmware, a plug-in, a function card, etc. When implemented in software, the elements of the present application are programs or code segments that are used to perform the required tasks. The program or code segment can be stored in a machine-readable medium, or transmitted on a transmission medium or a communication link by a data signal carried in a carrier wave. "Machine-readable medium" can include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROM, flash memory, erasable ROM (EROM), floppy disks, CD-ROMs, optical disks, hard disks, optical fiber media, radio frequency (RF) links, etc. The code segment can be downloaded via a computer network such as the Internet, an intranet, etc.

[0205] It should also be noted that the exemplary embodiments mentioned in this application describe some methods or systems based on a series of steps or devices. However, this application is not limited to the order of the above steps, that is, the steps can be performed in the order mentioned in the embodiment, or in a different order from the embodiment, or several steps can be performed simultaneously.

[0206] Aspects of the present disclosure are described above with reference to the flowchart and / or block diagram of the method, device (system) and computer program product according to the embodiment of the present disclosure. It should be understood that each box in the flowchart and / or block diagram and the combination of each box in the flowchart and / or block diagram can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device to produce a machine so that these instructions executed by the processor of the computer or other programmable data processing device enable the implementation of the function / action specified in one or more boxes of the flowchart and / or block diagram. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor, or a field programmable logic circuit. It can also be understood that each box in the block diagram and / or flowchart and the combination of boxes in the block diagram and / or flowchart can also be implemented by dedicated hardware that performs a specified function or action, or can be implemented by a combination of dedicated hardware and computer instructions.

[0207] The above is only a specific implementation of the present application. Those skilled in the art can clearly understand that for the convenience and simplicity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the protection scope of the present application is not limited to this. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in this application, and these modifications or replacements should be included in the protection scope of this application.

Claims

1. A scattering parameter de-embedding method, characterized in that: The method comprises: Obtain n de-embedding test structures, each of which includes a first GSG pad, a second GSG pad, and a transmission line, wherein the transmission line is used to connect the first GSG pad and the second GSG pad that are spaced apart, and n is a positive integer greater than or equal to 2; According to the first admittance and the second admittance, a first ABCD matrix corresponding to the first GSG pad and a second ABCD matrix corresponding to the second GSG pad are constructed; the first admittance is the admittance between the G pad and the S pad in the first GSG pad or the admittance between the G pad and the S pad in the second GSG pad, and the second admittance is the admittance between the transmission line and the S pad in the first GSG pad or the admittance between the transmission line and the S pad in the second GSG pad; According to the third admittance, the fourth admittance and the length of each of the n transmission lines, n third ABCD matrices corresponding to the n transmission lines are constructed; the third admittance is the admittance between the unit length transmission line and the ground in the equivalent π-type circuit corresponding to the unit length transmission line, the fourth admittance is the admittance of the unit length transmission line, the unit length transmission line is a target unit length transmission line obtained by dividing the transmission line, and the n transmission lines correspond to the n de-embedding test structures one by one; The ABCD matrix of the de-embedded device under test is obtained by solving the first ABCD matrix, the second ABCD matrix and the n third ABCD matrices, and the ABCD matrix of the device under test is converted into scattering parameters.

2. The method according to claim 1, characterized in that The constructing, according to the first admittance and the second admittance, a first ABCD matrix corresponding to the first GSG pad and a second ABCD matrix corresponding to the second GSG pad comprises: According to the first admittance and the second admittance, the first ABCD matrix is ​​constructed as follows: Wherein, Y1 is the first admittance, and Y2 is the second admittance; According to the first admittance and the second admittance, the second ABCD matrix is ​​constructed as follows:

3. The method according to claim 1, characterized in that The n third ABCD matrices corresponding to the n transmission lines are constructed one-to-one according to the third admittance, the fourth admittance and the length of each of the n transmission lines, including: According to the third admittance and the fourth admittance, the third ABCD matrix corresponding to the target transmission line is constructed as follows: Wherein, Y3 is the third admittance, Y4 is the fourth admittance, L0 is the target unit length, L is the length of the target transmission line, and the target transmission line is any one of the n transmission lines.

4. The method according to claim 1, characterized in that: Before solving the ABCD matrix of the de-embedded device under test according to the first ABCD matrix, the second ABCD matrix and the n third ABCD matrices, and converting the ABCD matrix of the device under test into scattering parameters, the method further includes: Acquire scattering parameters of the n de-embedded test structures and original devices, wherein the original devices include the device under test; Converting the scattering parameters of the n de-embedded test structures into ABCD matrices respectively to obtain n fourth ABCD matrices corresponding to the n de-embedded test structures one by one; and converting the scattering parameters of the original device into ABCD matrices to obtain a fifth ABCD matrix; The step of solving the ABCD matrix of the de-embedded device under test according to the first ABCD matrix, the second ABCD matrix and the n third ABCD matrices, and converting the ABCD matrix of the device under test into scattering parameters includes: According to the first ABCD matrix, the second ABCD matrix, the n third ABCD matrices, the n fourth ABCD matrices and the fifth ABCD matrix, the ABCD matrix of the device under test after de-embedding is obtained, and the ABCD matrix of the device under test is converted into scattering parameters.

5. The method according to claim 4, characterized in that The step of solving the de-embedded ABCD matrix of the device under test according to the first ABCD matrix, the second ABCD matrix, the n third ABCD matrices, the n fourth ABCD matrices and the fifth ABCD matrix comprises: According to the first ABCD matrix, the second ABCD matrix, the n third ABCD matrices and the n fourth ABCD matrices, n first target equation groups are constructed; Constructing a second target equation group according to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix; Solving the n first target equation groups to obtain the admittance values ​​of the first admittance, the second admittance, the third admittance and the fourth admittance; The second target equation group is solved according to the admittance values ​​of the first admittance, the second admittance, the third admittance and the fourth admittance to obtain the ABCD matrix of the device under test.

6. The method according to claim 5, characterized in that The n first target equation groups are constructed according to the first ABCD matrix, the second ABCD matrix, the n third ABCD matrices and the n fourth ABCD matrices, including: According to the first ABCD matrix, the second ABCD matrix, the i-th third ABCD matrix among the n third ABCD matrices and the i-th fourth ABCD matrix among the n fourth ABCD matrices, the i-th first target equation group among the n first target equation groups is constructed as follows: Wherein, the value of i is any integer in the range of 2 to n; [Mi] is the i-th fourth ABCD matrix, [P Left ] is the first ABCD matrix, [P Right ] is the second ABCD matrix, is the i-th third ABCD matrix.

7. The method according to claim 5, characterized in that The second target equation group is constructed according to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix, including: According to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix, the second target equation group is constructed as follows: [A raw ]=[P Left ]×[L Left ]×[A DUT ]×[L Right ]×[P Right ] Among them, [A raw ] is the fifth ABCD matrix, [P Left ] is the first ABCD matrix, [P Right ] is the second ABCD matrix, [A DUT ] is the ABCD matrix of the device under test; [L Left ] is a sixth ABCD matrix, and the sixth ABCD matrix is ​​the ABCD matrix corresponding to the transmission line of the first length in the original device; [L Right ] is the seventh ABCD matrix, the seventh ABCD matrix is ​​the ABCD matrix corresponding to the second length of the transmission line in the original device, the first length L Left With the second length L Right The sum of is the total length of the transmission line in the original device.

8. The method according to claim 7, characterized in that Before constructing a second target set of equations according to the first ABCD matrix, the second ABCD matrix and the fifth ABCD matrix, the method further includes: Based on the third admittance, the fourth admittance and the first length, the sixth ABCD matrix is ​​constructed as: Based on the third admittance, the fourth admittance and the second length, the seventh ABCD matrix is ​​constructed as: Among them, L Left is the first length, L Right is the second length, Y3 is the third admittance, Y4 is the fourth admittance, and L0 is the target unit length.

9. A scattering parameter de-embedding device, characterized in that: The device comprises: A first acquisition module is used to acquire n de-embedding test structures, each of which includes a first GSG pad, a second GSG pad, and a transmission line, wherein the transmission line is used to connect the first GSG pad and the second GSG pad that are spaced apart, and n is a positive integer greater than or equal to 2; A first construction module is used to construct a first ABCD matrix corresponding to the first GSG pad and a second ABCD matrix corresponding to the second GSG pad according to a first admittance and a second admittance; the first admittance is the admittance between the G pad and the S pad in the first GSG pad or the admittance between the G pad and the S pad in the second GSG pad, and the second admittance is the admittance between the transmission line and the S pad in the first GSG pad or the admittance between the transmission line and the S pad in the second GSG pad; A second construction module is used to construct n third ABCD matrices corresponding to the n transmission lines one by one according to the third admittance, the fourth admittance and the length of each of the n transmission lines; the third admittance is the admittance between the unit length transmission line and the ground in the equivalent π-type circuit corresponding to the unit length transmission line, the fourth admittance is the admittance of the unit length transmission line, the unit length transmission line is a target unit length transmission line obtained by dividing the transmission line, and the n transmission lines correspond to the n de-embedding test structures one by one; The first solving module is used to solve the ABCD matrix of the de-embedded device under test according to the first ABCD matrix, the second ABCD matrix and the n third ABCD matrices, and convert the ABCD matrix of the device under test into scattering parameters.

10. A scattering parameter de-embedding device, characterized in that: The device comprises: a processor and a memory storing computer program instructions; When the processor executes the computer program instructions, the scattering parameter de-embedding method according to any one of claims 1 to 8 is implemented.

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