Substrate cleaning apparatus and substrate cleaning method

Abstract

Provided is a substrate cleaning device capable of performing efficient self-cleaning of a cleaning tool in a short time. The substrate cleaning apparatus includes: a cleaning tool configured to contact a surface of a substrate to clean the substrate; the self-cleaning part is used for being in contact with a cleaning tool to perform self-cleaning on the cleaning tool; a cleaning tool rotating mechanism for rotating the cleaning tool; and a cleaning tool holding mechanism that holds the cleaning tool, can press the cleaning tool against the substrate, and can press the cleaning tool against the self-cleaning member. Furthermore, the substrate cleaning apparatus is provided with a control unit that controls the pressing force of the cleaning tool on the self-cleaning member such that the self-cleaning torque at which the cleaning tool rotation mechanism rotates the cleaning tool becomes a predetermined torque when the cleaning tool is self-cleaned. The predetermined torque is a torque greater than or equal to a substrate cleaning torque when the cleaning tool rotates the cleaning tool when the cleaning tool cleans the substrate.

Description

[0001] This application is a divisional application of the following application:

[0002] Filing date of original application: February 18, 2019

[0003] Application number of the original application: 201980019193.6

[0004] Title of the invention of the original application: Substrate cleaning device and substrate cleaning method Technical Field

[0005] The invention relates to a substrate cleaning device and a substrate cleaning method. Background Art

[0006] In the manufacturing process of semiconductor equipment, various films with different physical properties are formed on a silicide substrate, and fine metal wiring is formed by performing various processes on these films. For example, in the Damascus wiring formation process, a wiring groove is formed in the film, and a metal such as Cu is buried in the wiring groove. After that, the excess metal is removed by chemical mechanical polishing (CMP) to form metal wiring. Generally speaking, a CMP device (polishing device) for grinding a substrate is equipped with a substrate cleaning device for cleaning the ground substrate. The cleaning of the substrate is carried out by rotating the substrate while contacting a cleaning tool such as a roller sponge or a pen sponge with the substrate.

[0007] As the substrate is cleaned with a cleaning tool, abrasive particles or grinding chips (hereinafter collectively referred to as "processing chips") used in CMP accumulate on the surface and inside of the cleaning tool. Therefore, in order to remove such processing chips from the cleaning tool, the cleaning tool is self-cleaned regularly. The self-cleaning of the cleaning tool is performed by rotating the cleaning tool while bringing the cleaning tool into contact with a self-cleaning component such as a brush or a plate. In addition, before using a newly replaced brush to clean the polished substrate, a process similar to the above-mentioned self-cleaning is also performed for the purpose of initializing the brush. Hereinafter, these are collectively referred to as self-cleaning.

[0008] For example, such self-cleaning of the cleaning tool is performed for a shorter time between substrates (cleaning of each substrate), and for a longer time between batches (cleaning of a specified number of substrates in each batch) and during the run-in process. In addition, ultrapure water is often used as the cleaning liquid in the self-cleaning between substrates, and chemical liquid is also used as the cleaning liquid in the self-cleaning between batches and the run-in process.

[0009] Prior art literature

[0010] Patent Literature

[0011] Patent Document 1: Japanese Patent Application Publication No. 2005-12238

[0012] Technical problem to be solved by the invention

[0013] Since the self-cleaning of the cleaning tool is performed during or between the processing steps of the substrate, if the time taken for self-cleaning becomes longer, the time efficiency of the overall processing of the substrate will be reduced. On the other hand, if the self-cleaning effect of the cleaning tool is reduced due to the self-cleaning being performed in a short time, the processing debris remaining in the cleaning tool will contaminate the substrate.

[0014] In order to improve the self-cleaning effect, it is considered to adjust the rotation speed of the cleaning tool or the temperature of the cleaning liquid. That is, the higher the rotation speed of the cleaning tool, the higher the contact frequency between the cleaning tool and the contact part of the self-cleaning component, and the more efficient the self-cleaning of the cleaning tool. In addition, the higher the temperature of the cleaning liquid, the easier it is for the grinding chips to be discharged into the cleaning liquid, and the more efficient the self-cleaning of the cleaning tool.

[0015] In addition, the effect of self-cleaning is affected by the friction between the cleaning tool and the self-cleaning component. If the friction between the cleaning tool and the self-cleaning component is insufficient, the processing debris cannot be discharged from the cleaning tool, and thus a sufficient self-cleaning effect cannot be obtained. On the other hand, if the friction between the cleaning tool and the self-cleaning component is too large, it may become a cause of wear and degradation of the cleaning tool. Moreover, according to the research of the inventors, it is clear that the pressing of the cleaning tool, the rotation speed, and the temperature of the cleaning liquid affect the friction between the cleaning tool and the self-cleaning component in various forms. Summary of the invention

[0016] The present invention is made in view of at least part of the above problems, and one object of the present invention is to provide a substrate cleaning device or a substrate cleaning method that can perform efficient self-cleaning of a cleaning tool in a short time. In addition, one object of the present invention is to provide a substrate cleaning device or a substrate cleaning method that can perform self-cleaning of a cleaning tool by pressing the cleaning tool against a self-cleaning component with an appropriate pressing force.

[0017] Technical means for solving technical problems

[0018] (Method 1) According to method 1, the following substrate cleaning device is proposed, and the substrate cleaning device comprises: a cleaning tool, the cleaning tool is used to contact the surface of the substrate to clean the substrate; a self-cleaning part, the self-cleaning part is used to contact the cleaning tool to self-clean the cleaning tool; a cleaning tool rotating mechanism, the cleaning tool rotating mechanism is used to rotate the cleaning tool; a cleaning tool holding mechanism, the cleaning tool holding mechanism holds the cleaning tool, can press the cleaning tool against the substrate, and can press the cleaning tool against the self-cleaning part; and a control unit, the control unit controls the pressing force of the cleaning tool against the self-cleaning part in such a way that the torque of the cleaning tool rotating mechanism to rotate the cleaning tool when the cleaning tool contacts the self-cleaning part becomes a prescribed torque, and the prescribed torque is a torque greater than the torque of the cleaning tool rotating mechanism to rotate the cleaning tool when the cleaning tool cleans the substrate. According to method 1, the cleaning tool can be pressed against the self-cleaning part with an appropriate pressing force, so that the cleaning tool can be self-cleaned.

[0019] (Method 2) According to method 2, the following substrate cleaning device is proposed, which comprises: a cleaning tool, which is used to contact with the surface of a substrate to clean the substrate; a self-cleaning component, which is used to contact with the cleaning tool to self-clean the cleaning tool; a cleaning tool rotating mechanism, which is used to rotate the cleaning tool; a cleaning tool holding mechanism, which holds the cleaning tool and can press the cleaning tool against the substrate and the self-cleaning component; and a control unit, when the cleaning tool contacts the self-cleaning component, the control unit controls the cleaning tool holding mechanism so that when the cleaning tool rotates at a first rotation speed, the cleaning tool is pressed against the self-cleaning component with a first pressing force, and the control unit controls the cleaning tool holding mechanism so that when the cleaning tool rotates at a second rotation speed greater than the first rotation speed, the cleaning tool is pressed against the self-cleaning component with a second pressing force greater than the first pressing force. The second method is based on the following discovery: the friction between the cleaning tool and the self-cleaning member tends to decrease as the rotation speed of the cleaning tool increases. According to the second method, the cleaning tool can be pressed against the self-cleaning member with an appropriate pressing force, thereby performing self-cleaning on the cleaning tool.

[0020] (Method 3) According to method 3, the following substrate cleaning device is proposed, which comprises: a cleaning tool, which is used to contact with the surface of a substrate to clean the substrate; a self-cleaning part, which is used to contact with the cleaning tool to self-clean the cleaning tool; a cleaning tool rotating mechanism, which is used to rotate the cleaning tool; a cleaning tool holding mechanism, which holds the cleaning tool and can press the cleaning tool against the substrate and the self-cleaning part; and a control unit, when the cleaning tool contacts the self-cleaning part in a liquid or accompanied by the supply of liquid, the control unit controls the cleaning tool holding mechanism so that when the liquid is at a first temperature, the cleaning tool is pressed against the self-cleaning part with a first pressing force, and the control unit controls the cleaning tool holding mechanism so that when the liquid is at a second temperature higher than the first temperature, the cleaning tool is pressed against the self-cleaning part with a second pressing force greater than the first pressing force. The third method is based on the following discovery: the higher the temperature of the liquid used in self-cleaning, the smaller the friction between the cleaning tool and the self-cleaning component. According to the third method, the cleaning tool can be pressed against the self-cleaning component with an appropriate pressing force, thereby performing self-cleaning on the cleaning tool.

[0021] (Method 4) According to method 4, the following substrate cleaning device is proposed, and the substrate cleaning device comprises: a cleaning tool, the cleaning tool is used to contact the surface of the substrate to clean the substrate; a first self-cleaning component, the first self-cleaning component is formed of a first material, and is used to contact the cleaning tool to self-clean the cleaning tool; and a second self-cleaning component is formed of a second material, and is used to contact the cleaning tool to self-clean the cleaning tool, and one of the first self-cleaning component and the second self-cleaning component is selected based on an external input, and the cleaning tool is self-cleaned by contacting the selected self-cleaning component. According to method 4, the self-cleaning component can be selected based on the external input, thereby performing self-cleaning of the cleaning tool. As a result, efficient self-cleaning of the cleaning tool can be performed in a short time.

[0022] (Method 5) According to method 5, the following substrate cleaning device is proposed, which comprises: a cleaning tool, which is used to contact the surface of a substrate to clean the substrate; a first self-cleaning component, which is formed of a first material and is used to contact the cleaning tool to self-clean the cleaning tool; and a second self-cleaning component, which is formed of a second material and is used to contact the cleaning tool to self-clean the cleaning tool, and the cleaning tool is self-cleaned by contacting the cleaning tool with the second self-cleaning component after contacting the cleaning tool with the first self-cleaning component. Thus, the self-cleaning effect of the cleaning tool can be improved.

[0023] (Method 6) According to method 6, in the substrate cleaning device of method 4 or 5, the first material is a material having a larger hydrogen bonding component in surface free energy and a smaller dispersion force component than the second material when the cleaning tool is self-cleaned. According to method 6, firstly, the first self-cleaning part can be used to remove the processing debris having a larger hydrogen bonding component in surface free energy such as abrasive particles from the cleaning tool, and then the second self-cleaning part can be used to remove the processing debris having a larger dispersion force component in surface free energy such as organic complexes from the cleaning tool.

[0024] (Method 7) According to method 7, in the substrate cleaning device of any one of methods 4 to 6, the first material is an inorganic oxide-based material or a first organic polymer-based material having a polar group in its molecular structure, and the second material is a non-polar second organic polymer-based material.

[0025] (Method 8) According to method 8, in the substrate cleaning device of any one of methods 1 to 7, the self-cleaning of the cleaning tool includes a short-time self-cleaning of a first time and a long-time self-cleaning of a second time longer than the first time, ultrapure water is used in the short-time self-cleaning, and liquid medicine can also be used in the long-time self-cleaning, and when the liquid medicine is used, a rinse treatment with ultrapure water is performed. In either case, the liquid temperature can be increased to improve the cleaning effect. In addition, when ultrapure water is used for rinsing after the liquid medicine is used, although there is a case where the cleaning torque changes before and after rinsing, in this case, the pressing force or the rotation speed is adjusted so that the torque is equal to or higher than the torque during crystal cleaning.

[0026] (Mode 9) According to Mode 9, the substrate cleaning device of any one of Modes 1 to 8 comprises: a liquid tank that stores liquid and accommodates the self-cleaning component; and a vibrating unit that applies ultrasonic vibration to the liquid.

[0027] (Mode 10) According to Mode 10, in any one of Modes 1 to 9, the substrate cleaning device further comprises a spraying unit that sprays gas or liquid toward the cleaning tool when the cleaning tool is self-cleaned.

[0028] (Method 11) According to method 11, the following substrate cleaning method is proposed, the substrate cleaning method comprising: a substrate cleaning step, in which a cleaning tool is rotated and brought into contact with the surface of a substrate, thereby cleaning the substrate; and a self-cleaning step, in which the cleaning tool is rotated and brought into contact with a self-cleaning component, thereby self-cleaning the cleaning tool, wherein in the self-cleaning step, the pressing force of the cleaning tool against the self-cleaning component is controlled in such a way that the torque for rotating the cleaning tool becomes a prescribed torque, the prescribed torque being a torque greater than the torque for cleaning the substrate when the cleaning tool is rotated in the substrate cleaning step. According to method 11, the cleaning tool can be pressed against the self-cleaning component with an appropriate pressing force, thereby self-cleaning the cleaning tool.

[0029] (Method 12) According to method 12, the following substrate cleaning method is proposed, and the substrate cleaning method includes: a substrate cleaning step, in which a cleaning tool is rotated and brought into contact with the surface of a substrate, thereby cleaning the substrate; and a self-cleaning step, in which the cleaning tool is rotated and brought into contact with a self-cleaning component, thereby self-cleaning the cleaning tool, wherein in the self-cleaning step, when the cleaning tool rotates at a first rotation speed, the cleaning tool is pressed against the self-cleaning component with a first pressing force, and when the cleaning tool rotates at a second rotation speed greater than the first rotation speed, the cleaning tool is pressed against the self-cleaning component with a second pressing force greater than the first pressing force. According to method 12, the cleaning tool can be pressed against the self-cleaning component with an appropriate pressing force, thereby self-cleaning the cleaning tool.

[0030] (Method 13) According to method 13, the following substrate cleaning method is proposed, and the substrate cleaning method includes: a substrate cleaning step, in which a cleaning tool is rotated and brought into contact with the surface of a substrate, thereby cleaning the substrate; and a self-cleaning step, in which the cleaning tool is rotated and brought into contact with a self-cleaning component in a liquid or accompanied by the supply of a liquid, thereby self-cleaning the cleaning tool, in which, when the liquid is at a first temperature, the cleaning tool is pressed against the self-cleaning component with a first pressing force, and when the liquid is at a second temperature higher than the first temperature, the cleaning tool is pressed against the self-cleaning component with a second pressing force greater than the first pressing force. According to method 13, the cleaning tool can be pressed against the self-cleaning component with an appropriate pressing force, thereby self-cleaning the cleaning tool.

[0031] (Method 14) According to method 14, the following substrate cleaning method is proposed, and the substrate cleaning method includes: a substrate cleaning step, rotating a cleaning tool and bringing the cleaning tool into contact with the surface of a substrate, thereby cleaning the substrate; a selection step, selecting one of a first self-cleaning component formed of a first material and a second self-cleaning component formed of a second material based on an external input; and a self-cleaning step, rotating the cleaning tool and bringing the cleaning tool into contact with the self-cleaning component selected in the selection step, thereby performing self-cleaning on the cleaning tool. According to method 14, the self-cleaning component can be selected based on the external input, thereby performing self-cleaning of the cleaning tool. As a result, efficient self-cleaning of the cleaning tool can be performed in a short time.

[0032] (Method 15) According to method 15, the following substrate cleaning method is proposed, and the substrate cleaning method includes: a substrate cleaning step, in which a cleaning tool is rotated and brought into contact with the surface of a substrate, thereby cleaning the substrate; a first self-cleaning step, in which the cleaning tool is rotated and brought into contact with a first self-cleaning component formed of a first material, thereby self-cleaning the cleaning tool; and a second self-cleaning step, in which, after the first self-cleaning step, the cleaning tool is rotated and brought into contact with a second self-cleaning component formed of a second material, thereby self-cleaning the cleaning tool. According to method 15, two self-cleaning components are used to perform self-cleaning of the cleaning tool. Thereby, the self-cleaning effect of the cleaning tool can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a plan view showing a schematic structure of a substrate processing apparatus including a substrate cleaning apparatus according to an embodiment.

[0034] Figure 2 It is a perspective view showing a schematic structure of a substrate cleaning device according to an embodiment.

[0035] Figure 3 It is a perspective view showing a schematic structure of a substrate cleaning device according to another example.

[0036] Figure 4 It is a diagram schematically showing the self-cleaning of the pen-shaped component.

[0037] Figure 5 It is a diagram schematically showing self-cleaning of a roller-shaped component.

[0038] Figure 6 This is a flowchart showing an example of a process for setting a target pressing force during self-cleaning executed by the control unit of the first embodiment.

[0039] Figure 7 This is a flowchart showing an example of a process for setting a target pressing force during self-cleaning executed by the control unit of the second embodiment.

[0040] Figure 8 : is a diagram showing an example of the relationship between the rotation speed Ns, the temperature Tc, and the target pressing force Pp*.

[0041] Fig. 9 This is a diagram showing an example of a liquid tank and a self-cleaning member according to a third embodiment.

[0042] Fig.10 This is a flowchart showing an example of a self-cleaning member selection process executed by the control unit according to the third embodiment.

[0043] Fig.11 This is a flowchart showing an example of the self-cleaning process executed by the control unit according to the fourth embodiment. DETAILED DESCRIPTION

[0044] Hereinafter, the embodiments of the present invention will be described with reference to the accompanying drawings. In the accompanying drawings described below, the same or equivalent components are marked with the same symbols and repeated descriptions are omitted. The substrate cleaning device of this embodiment can be used as a part of a substrate processing device for processing substrates such as semiconductor wafers.

[0045] (First Embodiment)

[0046] Figure 1 1 is a diagram showing a simplified structure of a substrate processing device including a substrate cleaning device according to an embodiment. Figure 1 As shown, the substrate processing apparatus 10 includes a housing 110 and a loading port 112 disposed adjacent to the housing 110. The loading port 112 can be loaded with a plurality of substrates Wf (see Figure 2 The SMIF port and FOUP are closed containers that can store substrate boxes and maintain an environment independent of the external space.

[0047] The housing 110 contains: Figure 1 The embodiment shown includes four polishing units 114a to 114d, a first cleaning unit 116 and a second cleaning unit 118 for cleaning the polished substrate Wf, and a drying unit 120 for drying the cleaned substrate Wf. Figure 1 In the illustrated example, the polishing units 114 a to 114 d are arranged along the longitudinal direction of the substrate processing apparatus 10 , and the cleaning units 116 , 118 and the drying unit 120 are arranged in parallel with the polishing units 114 a to 114 d .

[0048] A first transport robot 122 is disposed between the loading port 112 and the polishing unit 114a and the drying unit 120 located on the loading port 112 side. In addition, a transport unit 124 is disposed between the polishing units 114a to 114d and the cleaning units 116, 118 and the drying unit 120. The first transport robot 122 receives the substrate Wf before polishing from the loading port 112 and transfers the substrate Wf before polishing to the transport unit 124, or receives the dried substrate Wf taken out from the drying unit 120 from the transport unit 124.

[0049] The polishing units 114a to 114d are regions for performing polishing (planarization) of the substrate Wf. Since the polishing units 114a to 114d are not the core of the present invention, detailed description thereof will be omitted.

[0050] A second conveying robot 126 is disposed between the first cleaning unit 116 and the second cleaning unit 118, and the second conveying robot 126 performs the transfer of substrates WF between these first cleaning units 116 and the second cleaning units 118. In addition, a third conveying unit 128 is disposed between the second cleaning unit 118 and the drying unit 120, and the third conveying unit 128 performs the transfer of substrates Wf between these second cleaning units 118 and the drying unit 120. In addition, a control unit 50 for controlling the operation of each machine of the substrate processing device 10 is disposed inside the housing 110. In the present embodiment, the control unit 50 is disposed inside the housing 110. However, it is not limited to such an example, and the control unit 50 may also be disposed outside the housing 110. In the present embodiment, the control unit 50 has an input unit 52 for receiving external input. Here, the external input includes mechanical operation performed by the user and input of a signal from an external device by wire or wireless.

[0051] The cleaning units 116 and 118 of this embodiment clean the substrate Wf by rotating a cleaning tool described later while contacting the surface of the substrate Wf. In addition, the cleaning units 116 and 118 may also use a two-fluid jet cleaning device that cleans the surface of the substrate Wf by two-fluid jets in conjunction with the cleaning tool.

[0052] As an example of the drying unit 120, the substrate Wf is dried by spraying IPA vapor from a nozzle (not shown) toward the rotating substrate Wf. Alternatively, the drying unit 120 may rotate the substrate Wf at high speed to dry the substrate Wf by centrifugal force.

[0053] Figure 2 It is a perspective view showing a schematic structure of a substrate cleaning device according to an embodiment. Figure 3 : is a three-dimensional diagram showing a simplified structure of a substrate cleaning device involved in another example. As shown in the figure, the substrate cleaning device 20 (substrate cleaning units 116, 118) has a substrate rotating mechanism for holding and rotating the substrate Wf (in this embodiment, refer to the supporting member 40 described later) and a cleaning liquid supply unit 42 for supplying a cleaning liquid to the substrate Wf. The cleaning liquid in this embodiment includes: a rinse liquid such as ultrapure water (DIW); ammonia hydrogen peroxide (SC1), hydrochloric acid hydrogen peroxide (SC2), sulfuric acid hydrogen peroxide (SPM), sulfuric acid plus water, fluoric acid and other liquids. Unless otherwise specified in this embodiment, the cleaning liquid means any one of the rinse liquid and the liquid.

[0054] The substrate Wf rotates with its central axis (the axis passing through the center O and perpendicular to the surface of the substrate Wf) as the rotation axis. In the present embodiment, although the method in which the surface of the substrate Wf extends in the horizontal direction and the rotation axis extends in the plumb direction is mainly described, it is not limited to this. The substrate rotation mechanism of the present embodiment has four support members 40 that support the outer periphery of the substrate Wf. The support member 40 is, for example, a spindle, a chuck, etc. The substrate Wf can be rotated by rotating the spindle, the chuck, etc.

[0055] The substrate cleaning device 20 includes: a cleaning tool 11 that contacts the substrate Wf to clean the substrate Wf; a cleaning tool rotating mechanism 31 that rotates the cleaning tool; and a cleaning tool holding mechanism 32 that holds the cleaning tool 11. As the cleaning tool 11, a pen-shaped member 11A (see FIG. 1A ) that rotates about a rotation axis that is substantially perpendicular to the surface of the substrate Wf can be used. Figure 2 ). In addition, as the cleaning tool 11, a roller-shaped member 11B (see Figure 2 , Figure 3 ).

[0056] When the pen-shaped member 11A is used as the cleaning tool 11, the cleaning tool rotating mechanism 31 rotates the cleaning tool 11 around a rotation axis that is substantially perpendicular to the surface of the substrate Wf. When the roller-shaped member 11B is used as the cleaning tool 11, the cleaning tool rotating mechanism 31 rotates the cleaning tool 11 around a rotation axis that is parallel to the surface of the substrate Wf. As the cleaning tool rotating mechanism 31, various mechanisms can be used, and as an example, a DC motor and a connecting rod mechanism can be used.

[0057] The cleaning tool holding mechanism 32 can move the cleaning tool 11 and the cleaning tool rotating mechanism 31 vertically relative to the surface of the substrate Wf to press the cleaning tool 11 against the substrate Wf or move the cleaning tool 11 away from the substrate Wf. As the cleaning tool holding mechanism 32, various mechanisms can be used, and as an example, a motor drive mechanism or a cylinder using a spherical screw can be used. In addition, the cleaning tool holding mechanism 32 can move the cleaning tool 11 and the cleaning tool rotating mechanism 31 parallel to the surface of the substrate Wf to change the contact portion between the cleaning tool 11 and the substrate Wf or move the cleaning tool 11 to a standby position not shown in the figure.

[0058] In addition, Figure 2 In the example shown, the pen-shaped member 11A is disposed on the upper surface ( Figure 2 The roller-shaped member 11B cleans the lower surface ( Figure 2 In addition, Figure 3In the example shown, the roller-shaped member 11B cleans the front and back surfaces of the substrate Wf. However, as long as the cleaning tool 11 contacts the surface of the substrate Wf to clean the substrate Wf, the substrate cleaning device 20 is not limited to Figure 2 or Figure 3 Example.

[0059] When the cleaning tool 11 is replaced and a new cleaning tool 11 is used, the cleaning tool 11 is broken in. The cleaning tool 11 may be dry in the initial state, and if it is used directly for the cleaning process, there is a concern that the substrate Wf may be damaged. In addition, when it is provided in a wet state, there are cases where particles that cause contamination are attached to the sponge itself. Therefore, the initial break-in is performed by immersing it in water and softening it to remove the particles. The cleaning process is performed using the cleaning tool 11 that has been broken in, and the substrate Wf is checked for reverse contamination after cleaning. Reverse contamination refers to the contamination of the cleaned substrate Wf by the cleaning tool 11. In the case where reverse contamination occurs, this reverse contamination check is important because it will have a serious adverse effect on the subsequent processing process.

[0060] In addition, as the substrate Wf is cleaned by the cleaning tool 11, the processing scraps when grinding the substrate Wf accumulate on the surface and inside of the cleaning tool 11. Therefore, the self-cleaning of the cleaning tool 11 is performed regularly. The self-cleaning is performed by making the cleaning tool 11 contact the self-cleaning component 60. The self-cleaning of the cleaning tool 11 is a shorter time (first time) between substrates (cleaning of each substrate), and a longer time (second time) between batches (cleaning of a specified number of substrates in each batch). In addition, in the present embodiment, in the self-cleaning between substrates, pure water (DIW) and the like are used as liquids used in self-cleaning. On the other hand, in the self-cleaning between batches, ultrapure water is used after using liquid medicines such as ammonia hydrogen peroxide (SC1), hydrochloric acid hydrogen peroxide (SC2), sulfuric acid hydrogen peroxide (SPM), sulfuric acid plus water, and fluoric acid. However, it is not limited to such an example, and liquid medicines may also be used in the self-cleaning between substrates, and liquid medicines may not be used in the self-cleaning between batches. In addition, the following "self-cleaning" includes "running-in".

[0061] Figure 4 1A is a diagram schematically showing the self-cleaning of the pen-shaped component 11A. Figure 5 1B is a diagram schematically showing the self-cleaning of the roller-shaped member 11B. Figure 4 and Figure 5As shown, the self-cleaning component 60 is arranged in the liquid tank 62. The self-cleaning component 60 is formed of inorganic oxide materials such as quartz plates and sapphire plates, or is formed of organic polymer materials with good chemical resistance and low dissolution such as PTFE, PVDF, PFA, PPS, PEEK, and PMMA. In addition, the liquid tank 62 stores liquid 64 such as ultrapure water (DIW) or ammonia hydrogen peroxide (SC1), hydrochloric acid hydrogen peroxide (SC2), sulfuric acid hydrogen peroxide (SPM), sulfuric acid and water, or fluoric acid. Preferably, a clean liquid is supplied to the liquid tank 62 by a liquid transfer mechanism 65 or the liquid inside is circulated while being cleaned. In addition, it is preferred that the temperature of the liquid 64 stored in the liquid tank 62 can be adjusted by a temperature regulating mechanism 66. As the temperature regulating mechanism 66, for example, a heater can be used. In addition, the substrate cleaning device 20 can also have a vibrating unit 67, which applies ultrasonic vibration to the liquid tank 62 when the cleaning tool 11 performs self-cleaning. In addition, the substrate cleaning apparatus 20 may include a spraying unit 68 that sprays gas or liquid toward the cleaning tool 11 when the cleaning tool 11 performs self-cleaning.

[0062] In addition, Figure 4 and Figure 5 In the example shown, the self-cleaning member 60 is arranged in the liquid tank 62. However, the present invention is not limited to such an example, and the liquid tank 62 may not be provided. However, even in the case where the liquid tank 62 is not provided, the self-cleaning of the cleaning tool 11 may be performed while the liquid 64 is supplied by the liquid transfer mechanism 65, that is, for example, the liquid 64 continuously flows. In addition, even in such a case, the temperature of the liquid 64 may be adjusted by the temperature adjustment mechanism 66.

[0063] like Figure 4 As shown, when the pen-shaped member 11A is self-cleaned, the cleaning tool rotating mechanism 31 rotates the pen-shaped member 11A, and the cleaning tool holding mechanism 32 presses the pen-shaped member 11A against the self-cleaning member 60. Figure 4 Although the example in which the surface of the self-cleaning component 60 is perpendicular to the rotation axis of the pen-shaped component 11A is shown, it is not limited to such an example. Figure 5 As shown in FIG. 1 , when the roller-shaped member 11B is self-cleaned, the cleaning tool rotating mechanism 31 rotates the roller-shaped member 11B, and the cleaning tool holding mechanism 32 presses the roller-shaped member 11B against the self-cleaning member 60. Figure 5 In the example shown, the surface of the self-cleaning member 60 is inclined with respect to the vertical direction, and the roller-shaped member 11B moves in the vertical direction to contact the self-cleaning member, but the present invention is not limited to such an example.

[0064] Figure 6 1 is a flowchart showing an example of a process for setting a target pressing force during self-cleaning performed by the control unit 50 of the embodiment. This process is performed every predetermined time (e.g., every several tens of msec) when the cleaning tool 11 is brought into contact with the self-cleaning member 60, that is, when the cleaning tool 11 is self-cleaning.

[0065] When the process starts, first the control unit 50 reads the output torque Tr of the cleaning tool rotating mechanism 31 (S12). The output torque Tr is the torque at which the cleaning tool rotating mechanism 31 rotates the cleaning tool 11 when the cleaning tool 11 contacts the self-cleaning component 60, and can be detected based on the current value flowing in the unillustrated motor of the cleaning tool rotating mechanism 31, for example. In addition, the output torque Tr can also be used by the torque command issued by the control unit 50 to the cleaning tool rotating mechanism 31.

[0066] Next, the control unit 50 sets the target pressing force Pp* (S14) for pressing the cleaning tool 11 against the self-cleaning component 60 based on the output torque Tr and the specified target torque Tr*, and then terminates this process. Here, the target torque Tr* is a predetermined specified torque, and is also a torque above the torque (torque during substrate cleaning) acting on the cleaning tool 11 when the cleaning tool 11 cleans the substrate Wf. The target torque Tr* can also be set by external input. In addition, as an example of setting the target pressing force Pp*, it can be based on the difference between the output torque Tr and the target torque Tr*, by using a PI operation using a proportional gain Gp and an integral gain Gi, or a PID operation using a proportional gain Gp, an integral gain Gi and a differential gain Gd. When this process ends, the control unit 50 controls the cleaning tool holding mechanism 32 so that the cleaning tool 11 is pressed against the self-cleaning component 60 with the target pressing force Pp*.

[0067] The friction between the cleaning tool 11 and the self-cleaning part 60 varies not only by the pressing force Pp of the cleaning tool 11 on the self-cleaning part 60, but also by the wear of the cleaning tool 11, the rotation speed (rotation speed Ns) of the cleaning tool 11, the type and temperature Tc of the liquid 64, and the material and shape of the self-cleaning part 60. When the friction between the cleaning tool 11 and the self-cleaning part 60 is insufficient, there is a concern that the self-cleaning of the cleaning tool 11 cannot obtain a sufficient effect. In such a case, due to the insufficient self-cleaning of the cleaning tool 11, the reverse contamination of the substrate Wf is generated, which will have an adverse effect on the subsequent processing process or cause the time and cost required for the running-in inspection to increase. On the other hand, when the friction between the cleaning tool 11 and the self-cleaning part 60 is too large, it becomes the cause of the deterioration of the cleaning tool 11 due to wear. In this regard, in the substrate cleaning device 20 of the present embodiment, the pressing force of the cleaning tool 11 on the self-cleaning part 60 is controlled in such a way that the output torque Tr of the cleaning tool rotating mechanism 31 when the cleaning tool 11 contacts the self-cleaning part 60 becomes a prescribed torque above the torque during substrate cleaning. Thus, by adopting a torque that does not deteriorate the cleaning tool 11 as the predetermined torque, the cleaning tool 11 can be pressed against the self-cleaning member 60 with an appropriate pressing force, thereby performing self-cleaning on the cleaning tool 11 .

[0068] In addition, according to the substrate cleaning device 20 of this embodiment, the target torque Tr* is a torque greater than the torque during substrate cleaning. That is, the target torque Tr* is a torque greater than the torque acting on the cleaning tool 11 when the cleaning tool 11 accumulates processing scraps. By using such a target torque Tr*, the processing scraps can be appropriately removed from the cleaning tool 11 in a short time.

[0069] (Second Embodiment)

[0070] The substrate processing apparatus 10 of the second embodiment has the same structure as the substrate processing apparatus 10 of the first embodiment, and the repeated description is omitted. Figure 6 The processing shown is executed Figure 7 The target pressure setting process during self-cleaning shown in the embodiment is different from the substrate processing apparatus 10 of the first embodiment. When the cleaning tool 11 is brought into contact with the self-cleaning member 60, that is, when the cleaning tool 11 is self-cleaned, the control unit 50 executes the setting process every predetermined time (for example, every several tens of milliseconds). Figure 7 Processing shown.

[0071] When this process starts, the control unit 50 reads the rotation speed Ns of the cleaning tool 11 and the temperature Tc of the liquid 64 (S22). The rotation speed Ns of the cleaning tool 11 can use a detection value detected by a sensor (not shown) that detects the rotation speed Ns of the cleaning tool 11, or a detection value detected by a sensor (not shown) that detects the rotation speed of the cleaning tool rotating mechanism 31. In addition, the rotation speed Ns of the cleaning tool 11 can also use a rotation speed instruction issued to the cleaning tool rotating mechanism 31. The temperature Tc of the liquid 64 can use a detection value from a temperature sensor (not shown) provided in the liquid tank 62. In addition, the temperature of the liquid 64 can also use a temperature instruction from the temperature adjustment mechanism 66.

[0072] Next, the control unit 50 sets a target pressing force Pp* (S24) for pressing the cleaning tool 11 against the self-cleaning component 60 based on the rotation speed Ns and the temperature Tc, and then ends the process. In the process of S24, the target pressing force Pp* is set with a tendency that the larger the rotation speed Ns is, the larger the target pressing force Pp* is, and the higher the temperature Tc of the liquid 64 is, the larger the target pressing force Pp* is. Figure 8 is a diagram showing an example of the relationship between the rotation speed Ns, the temperature Tc, and the target pressing force Pp*. Figure 8 In the example, the target pressing force Pp* increases linearly as the rotation speed Ns or the temperature Tc increases, but it is not limited to this example. For example, it can also be that the target pressing force Pp* increases in stages as the rotation speed Ns or the temperature Tc increases, and the relationship between the rotation speed Ns or the temperature Tc and the target pressing force Pp* can also be expressed as a curve. As an example, the relationship between the rotation speed Ns and the temperature Tc and the target pressing force Pp* is set in advance as a mapping through experiments, etc., and the processing of S24 can be performed based on the mapping and the read rotation speed Ns and temperature Tc. However, it is not limited to such an example, and it can also be that the control unit 50 sets the target pressing force Pp* by various methods based on the rotation speed Ns and the temperature Tc. When the present processing is terminated, the control unit 50 controls the cleaning tool holding mechanism 32 so that the cleaning tool 11 is pressed against the self-cleaning component 60 with the target pressing force Pp*.

[0073] According to the research of the inventor, it is found that the larger the rotation speed Ns of the cleaning tool 11 is, the smaller the friction between the cleaning tool 11 and the self-cleaning part 60 is. Therefore, according to the substrate cleaning device 20 of the second embodiment, when the cleaning tool 11 rotates at the first rotation speed Ns1, the cleaning tool 11 is pressed against the self-cleaning part 60 with the first pressing force Pp1. In addition, when the cleaning tool 11 rotates at the second rotation speed Ns2 (Ns2>Ns1) greater than the first rotation speed Ns1, the cleaning tool 11 is pressed against the self-cleaning part 60 with the second pressing force Pp2 (Pp2>Pp1) greater than the first pressing force Pp1. Thus, it is possible to suppress the following situation: when the rotation speed Ns of the cleaning tool 11 is large, the friction between the cleaning tool 11 and the self-cleaning part 60 is insufficient and a sufficient effect cannot be obtained. That is, according to the substrate cleaning device 20 of the second embodiment, the cleaning tool 11 can be pressed against the self-cleaning part 60 with an appropriate pressing force, so that the cleaning tool 11 is self-cleaned.

[0074] In addition, according to the research of the present inventor, it is found that the higher the temperature Tc of the liquid 64, the smaller the friction between the cleaning tool 11 and the self-cleaning part 60. Therefore, according to the substrate cleaning device 20 of the second embodiment, when the temperature Tc of the liquid 64 is the first temperature Tc1, the cleaning tool 11 is pressed against the self-cleaning part 60 with the first pressing force Pp1. In addition, when the temperature Tc of the liquid 64 is the second temperature Tc2 (Tc2>Tc1) higher than the first temperature Tc1, the cleaning tool 11 is pressed against the self-cleaning part 60 with the second pressing force Pp2 (Pp2>Pp1) greater than the first pressing force Pp1. Thus, the following situation can be suppressed: when the temperature of the liquid 64 is high, the friction between the cleaning tool 11 and the self-cleaning part 60 is insufficient and a sufficient effect cannot be obtained. That is, according to the substrate cleaning device 20 of the second embodiment, the cleaning tool 11 can be pressed against the self-cleaning part 60 with an appropriate pressing force, so that the cleaning tool 11 can be self-cleaned.

[0075] In addition, in the substrate cleaning device 20 of the second embodiment, although the target pressing force Pp* is set based on the rotation speed Ns of the cleaning tool 11 and the temperature Tc of the liquid 64, the target pressing force Pp* may be set based on one of the rotation speed Ns and the temperature Tc. In addition, it is also possible to set the target pressing force Pp* based on other parameters instead of or in addition to this. As an example, it is also possible to set the target pressing force Pp* in a manner that the more times the cleaning tool 11 cleans the substrate Wf, the greater the target pressing force Pp*. In addition, it is also possible to set the target pressing force Pp* to a value greater than the target pressing force Pp* when ultrapure water is used as the liquid 64 when a liquid with a surfactant added is used. In addition, it is also possible to set the target pressing force Pp* based on the material of the self-cleaning component 60. In addition, it is also possible to set the target pressing force Pp* in a manner that the longer the contact time between the cleaning tool 11 and the self-cleaning component 60, the greater or smaller the target pressing force Pp*.

[0076] (Third Embodiment)

[0077] The substrate cleaning device 20 of the third embodiment is different from the substrate cleaning device 20 of the first embodiment in that the self-cleaning component 60 includes a first component (first self-cleaning component) 60A formed of a first material and a second component (second self-cleaning component) 60B formed of a second material, and the other structures are the same as the substrate cleaning device 20 of the first embodiment. Here, the first material is, for example, an inorganic oxide-based material or an organic polymer-based material (first organic polymer-based material) having a large hydrogen bonding component of the surface free energy due to the presence of polar groups in the molecular structure. In addition, the second material is, for example, an organic polymer-based material (second organic polymer-based material) having a large dispersion force component of the surface free energy due to the absence of polar groups in the molecular structure.

[0078] Fig. 9 1 is a diagram showing an example of a liquid tank and a self-cleaning component involved in the third embodiment. As shown in the figure, in the third embodiment, a first component 60A and a second component 60B are arranged in a liquid tank 62. However, the first component 60A and the second component 60B are not limited to such an example, and may also be arranged in a separate liquid tank 62. In addition, the liquid tank 62 may not be provided. However, even in the case where the liquid tank 62 is not provided, it may be that the liquid 64 is supplied by the liquid transfer mechanism 65, that is, for example, the liquid 64 flows continuously while the self-cleaning of the cleaning tool 11 is performed.

[0079] Fig.101 is a flowchart showing an example of a self-cleaning component selection process performed by the control unit 50 of the third embodiment. As an example, this process is performed when the substrate cleaning device 20 is started or when the input unit 52 receives an external input. When this process is performed, the control unit 50 determines whether the first component 60A is selected (S42) through the external input. As an example, this process can be performed by referring to a specified area of ​​the memory of the control unit 50, which is not shown. Then, when the first component 60A is selected (S42: Yes), the control unit 50 sets the first component 60A as the self-cleaning component, and then ends this process. On the other hand, when the first component 60A is not selected (S42: No), the control unit 50 sets the second component 60B as the self-cleaning component, and then ends this process. Then, the control unit 50 uses the self-cleaning component 60 selected by this process to perform self-cleaning of the cleaning tool 11.

[0080] It can be imagined that the appropriate material of the self-cleaning component 60 for self-cleaning the cleaning tool 11 is different depending on the processing scraps accumulated in the cleaning tool 11. For example, when the processing scraps with a large amount of hydrogen bonding components in the surface free energy such as abrasive grains are taken as the object, it is considered to be preferable to use the first component 60A formed by an inorganic oxide material or an organic polymer material having a polar group in the molecular structure as the self-cleaning component 60. In addition, when the processing scraps with a large amount of dispersion force components in the surface free energy such as an organic complex are taken as the object, it is considered to be preferable to use the second component 60B formed by an organic polymer material without a polar group in the molecular structure as the self-cleaning component 60. In this regard, according to the substrate cleaning device 20 of the third embodiment, since the self-cleaning component 60 is selected based on external input, the self-cleaning of the cleaning tool 11 can be performed by an appropriate self-cleaning component 60. As a result, efficient self-cleaning of the cleaning tool can be performed in a short time.

[0081] In addition, there are inorganic oxide materials such as quartz whose hydrogen bonding component of the surface free energy is greatly reduced as the temperature rises. Therefore, when the liquid 64 is heated at the same time, since materials such as PMMA are both organic polymer materials and have polar groups in their molecular structures, materials with a large hydrogen bonding component at high temperatures can also be used for cleaning tools that treat waste with a large amount of hydrogen bonding components as the object. In other words, when the cleaning tool 11 is self-cleaned, the first component 60A can also be formed of a material with a large amount of hydrogen bonding components and a small amount of dispersion force components in the surface free energy compared to the second component 60B.

[0082] (Fourth Embodiment)

[0083] The substrate cleaning apparatus 20 of the fourth embodiment has the same structure as the substrate cleaning apparatus 20 of the third embodiment. The substrate cleaning apparatus 20 of the fourth embodiment is different from the substrate cleaning apparatus 20 of the third embodiment in that the cleaning tool 11 is in contact with both the first member 60A and the second member 60B.

[0084] Fig.11 4 is a flowchart showing an example of a self-cleaning process performed by the control unit 50 of the fourth embodiment. This process is performed when the cleaning tool 11 is self-cleaned. When the self-cleaning process is performed, the control unit 50 first performs the self-cleaning process performed by the first component 60A by causing the cleaning tool 11 to rotate while contacting the first component 60A (S52). Then, the control unit 50 performs the self-cleaning process performed by the second component 60B by causing the cleaning tool 11 to rotate while contacting the second component 60B (S54), and then ends this process.

[0085] According to the fourth embodiment, the cleaning tool 11 is rotated while contacting the first part 60A formed of an anode oxide material or an organic polymer material having a polar group in the molecular structure, and then the cleaning tool 11 is rotated while contacting the second part 60B formed of an organic polymer material without a polar group in the molecular structure, thereby performing self-cleaning of the cleaning tool 11. Thus, firstly, the processing scraps with a large amount of hydrogen bonding components of the surface free energy such as abrasive particles can be removed from the cleaning tool 11, and then the processing scraps with a large amount of dispersive force components of the surface free energy such as organic complexes can be removed from the cleaning tool 11. By such a method, efficient self-cleaning of the cleaning tool can be performed in a short time.

[0086] Although the embodiments of the present invention have been described above, the embodiments of the invention described above are intended to facilitate understanding of the present invention rather than to limit the present invention. It is self-evident that the present invention includes equivalents obtained by changes and improvements within the scope of the gist of the present invention. In addition, within the scope that can solve at least part of the above-mentioned problems, or within the scope that at least part of the effects are achieved, any combination of the embodiments and variations can be performed, and any combination or omission of the components described in the scope of the present invention and the specification can be performed.

[0087] The present invention claims priority based on Japanese Patent Application No. 2018-048217 filed on March 15, 2018. The entire disclosure of Japanese Patent Application No. 2018-048217, including the specification, claims, drawings, and abstract, is incorporated herein by reference. The entire disclosure of Japanese Patent Application No. 2005-012238 (Patent Document 1), including the specification, claims, drawings, and abstract, is incorporated herein by reference.

[0088] Explanation of symbols

[0089] 10…Substrate processing equipment

[0090] 11…Cleaning tools

[0091] 11A…Pen-type parts

[0092] 11B…Roller type parts

[0093] 20…Substrate cleaning device

[0094] 31…Cleaning tool rotating mechanism

[0095] 32…Cleaning tool holding mechanism

[0096] 40…Supporting parts

[0097] 42…Cleaning fluid supply unit

[0098] 50…Control Department

[0099] 52…Input

[0100] 60…Self-cleaning parts

[0101] 60A…First component (first self-cleaning component)

[0102] 60B…Second component (second self-cleaning component)

[0103] 62…Liquid Tank

[0104] 64…Liquid

[0105] 65…Liquid transfer mechanism

[0106] 66…Temperature regulating mechanism

[0107] 67…Vibration

[0108] 68… ejection portion.

Claims

1. A substrate cleaning device, characterized in that: have: A cleaning tool, the cleaning tool being used to contact with the surface of the substrate to clean the substrate; A self-cleaning component, the self-cleaning component is used to contact the cleaning tool to perform self-cleaning on the cleaning tool; A cleaning tool rotating mechanism, the cleaning tool rotating mechanism is used to rotate the cleaning tool; a cleaning tool holding mechanism, which holds the cleaning tool, can press the cleaning tool against the substrate, and can press the cleaning tool against the self-cleaning component; as well as A control unit, which reads the temperature of the liquid when the cleaning tool contacts the self-cleaning part in the liquid or with the supply of liquid, and controls the cleaning tool holding mechanism so that when the read temperature is a first temperature, the cleaning tool is pressed against the self-cleaning part with a first pressing force, and controls the cleaning tool holding mechanism so that when the read temperature is a second temperature higher than the first temperature, the cleaning tool is pressed against the self-cleaning part with a second pressing force greater than the first pressing force.

2. The substrate cleaning device according to claim 1, characterized in that: When the cleaning tool contacts the self-cleaning component, the control unit controls the cleaning tool holding mechanism so that when the cleaning tool rotates at a first rotation speed, the cleaning tool is pressed against the self-cleaning component with a pressing force at the first rotation speed, and the control unit controls the cleaning tool holding mechanism so that when the cleaning tool rotates at a second rotation speed greater than the first rotation speed, the cleaning tool is pressed against the self-cleaning component with a pressing force at the second rotation speed greater than the pressing force at the first rotation speed.

3. The substrate cleaning device according to claim 1, characterized in that: The self-cleaning component has: A first self-cleaning component, the first self-cleaning component is formed of a first material and is used for contacting the cleaning tool to perform self-cleaning on the cleaning tool; as well as a second self-cleaning component, the second self-cleaning component is formed of a second material and is used for contacting the cleaning tool to perform self-cleaning on the cleaning tool; The first material is a material having a larger hydrogen bonding component and a smaller dispersion force component in surface free energy than the second material when the cleaning tool is self-cleaned. One of the first self-cleaning component and the second self-cleaning component is selected based on an external input, and the cleaning tool is self-cleaned by bringing the cleaning tool into contact with the selected self-cleaning component.

4. The substrate cleaning device according to claim 1, characterized in that: The self-cleaning component has: A first self-cleaning component, the first self-cleaning component is formed of a first material and is used for contacting the cleaning tool to perform self-cleaning on the cleaning tool; as well as a second self-cleaning component, the second self-cleaning component is formed of a second material and is used for contacting the cleaning tool to perform self-cleaning on the cleaning tool; The first material is an inorganic oxide material or a first organic polymer material having a polar group in its molecular structure. The second material is a non-polar second organic polymer material, One of the first self-cleaning component and the second self-cleaning component is selected based on an external input, and the cleaning tool is self-cleaned by bringing the cleaning tool into contact with the selected self-cleaning component.

5. The substrate cleaning device according to claim 1, characterized in that: The self-cleaning component has: A first self-cleaning component, the first self-cleaning component is formed of a first material and is used for contacting the cleaning tool to perform self-cleaning on the cleaning tool; as well as a second self-cleaning component, the second self-cleaning component is formed of a second material and is used for contacting the cleaning tool to perform self-cleaning on the cleaning tool; The first material is a material having a larger hydrogen bonding component and a smaller dispersion force component in surface free energy than the second material when the cleaning tool is self-cleaned. The cleaning tool is self-cleaned by bringing the cleaning tool into contact with the second self-cleaning component after bringing the cleaning tool into contact with the first self-cleaning component.

6. The substrate cleaning device according to claim 1, characterized in that: The self-cleaning component has: A first self-cleaning component, the first self-cleaning component is formed of a first material and is used for contacting the cleaning tool to perform self-cleaning on the cleaning tool; as well as a second self-cleaning component, the second self-cleaning component is formed of a second material and is used for contacting the cleaning tool to perform self-cleaning on the cleaning tool; The first material is an inorganic oxide material or a first organic polymer material having a polar group in its molecular structure. The second material is a non-polar second organic polymer material, The cleaning tool is self-cleaned by bringing the cleaning tool into contact with the second self-cleaning component after bringing the cleaning tool into contact with the first self-cleaning component.

7. The substrate cleaning device according to any one of claims 1 to 6, characterized in that: The self-cleaning of the cleaning tool is a short self-cleaning of a first time and a long self-cleaning of a second time longer than the first time. Ultrapure water is used in the short-time self-cleaning, and ultrapure water is used for rinsing after the chemical liquid treatment in the long-time self-cleaning, or only ultrapure water treatment is performed.

8. The substrate cleaning device according to any one of claims 1 to 6, characterized in that: have: a liquid tank storing liquid and accommodating the self-cleaning component; and A vibrating unit applies ultrasonic vibration to the liquid.

9. The substrate cleaning device according to any one of claims 1 to 6, characterized in that: The cleaning tool further includes a spraying portion for spraying gas or liquid toward the cleaning tool when the cleaning tool is self-cleaned.

10. A substrate cleaning method, characterized in that: include: a substrate cleaning step of rotating the cleaning tool and bringing the cleaning tool into contact with the surface of the substrate, thereby cleaning the substrate; as well as a self-cleaning step, wherein the cleaning tool is rotated and brought into contact with a self-cleaning component in a liquid or with the supply of a liquid, thereby self-cleaning the cleaning tool; In the self-cleaning step, the temperature of the liquid is read, and when the read temperature is a first temperature, the cleaning tool is pressed against the self-cleaning part with a first pressing force, and when the read temperature is a second temperature higher than the first temperature, the cleaning tool is pressed against the self-cleaning part with a second pressing force greater than the first pressing force.

11. The substrate cleaning method according to claim 10, characterized in that: In the self-cleaning step, when the cleaning tool rotates at a first rotational speed, the cleaning tool is pressed against the self-cleaning part with a pressing force at the first rotational speed, and when the cleaning tool rotates at a second rotational speed greater than the first rotational speed, the cleaning tool is pressed against the self-cleaning part with a pressing force at the second rotational speed greater than the pressing force at the first rotational speed.

12. The substrate cleaning method according to claim 10, characterized in that: The self-cleaning step comprises: A selecting step of selecting one of a first self-cleaning member formed of a first material and a second self-cleaning member formed of a second material based on an external input; and a step of rotating the cleaning tool and bringing the cleaning tool into contact with the self-cleaning component selected in the selecting step, thereby performing self-cleaning on the cleaning tool; The first material is a material having a larger hydrogen bonding component and a smaller dispersion force component in surface free energy than the second material when the cleaning tool is self-cleaned.

13. The substrate cleaning method according to claim 10, characterized in that: The self-cleaning step comprises: a first self-cleaning step of rotating the cleaning tool and bringing the cleaning tool into contact with a first self-cleaning member formed of a first material, thereby performing self-cleaning on the cleaning tool; and a second self-cleaning step, after the first self-cleaning step, rotating the cleaning tool and bringing the cleaning tool into contact with a second self-cleaning component formed of a second material, thereby self-cleaning the cleaning tool; The first material is a material having a larger hydrogen bonding component and a smaller dispersion force component in surface free energy than the second material when the cleaning tool is self-cleaned.

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