Gas distribution assembly and substrate processing equipment

Abstract

The invention belongs to the technical field of semiconductor manufacturing equipment, and particularly relates to a gas distribution assembly and substrate processing equipment, the gas distribution assembly is used for the substrate processing equipment, the substrate processing equipment comprises a base and a reaction cavity, the reaction cavity is used for containing a substrate, the base is used for bearing the substrate, and the gas distribution assembly is used for distributing gas to the surface of the substrate. The gas distribution assembly comprises at least one output module, the output module comprises a gas chamber, at least one gas inlet and pulse valves located between the gas chamber and the gas inlet, the gas chamber is connected with the at least one gas inlet, and the pulse valves are in one-to-one correspondence with the gas inlets and located at the ends, connected with the gas chamber, of the gas inlets. The volume of the gas inlet is obviously reduced relative to the sum of the interior of the whole gas distribution assembly and the pipeline, the gas displacement is reduced, and the gas exhaust difficulty is reduced, so that the residual gas in the reaction cavity is reduced, the mixing of the gas introduced into the reaction cavity when the pulse valve is opened twice is reduced, and the film forming quality and the product yield are improved.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor manufacturing equipment, and specifically relates to a gas distribution component and substrate processing equipment. Background Art

[0002] Substrate processing equipment includes gas distribution components, reaction chambers and bases. Substrates include wafers for making chips and substrates for making display panels. Substrate processing includes dry etching, thin film deposition and dry cleaning. Thin film deposition includes chemical vapor deposition (CVD), physical vapor deposition (PVD) and atomic layer deposition (ALD).

[0003] When the substrate processing device is working, the substrate is carried on the base 10, the reaction chamber 20 accommodates the substrate, and the gas distribution assembly 30 is connected to the gas source 40 to pass gas into the reaction chamber 20 to perform the above-mentioned substrate processing on the substrate. Figure 1 The substrate processing equipment is used for preparing film layers by ALD, wherein the gas distribution assembly 30 includes a nozzle 31, the nozzle 31 is connected to the gas source 40 via a pipeline, and a control valve 32 is arranged on the pipeline to control the connection between the gas source 40 and the nozzle 31. When the existing substrate processing equipment is working, different types of gases, such as the first gas and the second gas, need to be alternately introduced into the reaction chamber 20. Since the control valve 32 is arranged on the pipeline, the gas remaining in the pipeline and the nozzle 31 at the rear end of the control valve 32 needs to be discharged before changing the gas. The gas to be discharged is large and easy to remain, resulting in mixing between the gases introduced successively within a period T, such as Figure 2 After the mixed first gas and second gas undergo a chemical reaction in the gaseous state, the product is deposited on the substrate surface, which reduces the uniformity of the atomic layer deposition film. Summary of the invention

[0004] The purpose of the present application is to provide a gas distribution component and substrate processing equipment to improve film quality and product yield.

[0005] In order to achieve the above object, the present application provides a gas distribution assembly for a substrate processing device, the substrate processing device comprising a susceptor and a reaction chamber, the reaction chamber is used to accommodate a substrate, the susceptor is used to carry the substrate, the gas distribution assembly is used to distribute gas to the surface of the substrate, the gas distribution assembly comprises:

[0006] At least one output module, the output module comprises an air chamber, at least one air inlet, and a pulse valve located between the air chamber and the air inlet, the air chamber is connected to the at least one air inlet, the pulse valve corresponds to the air inlet one by one and is located at one end of the air inlet connected to the air chamber, when the gas distribution assembly comprises a plurality of air inlets, the plurality of air inlets are distributed in a plane or a curved surface;

[0007] The distributing gas to the surface of the substrate includes: when the pulse valve is opened, the gas in the gas chamber is transported to the reaction chamber through the gas inlet.

[0008] Optionally, the switching frequency of the pulse valve is greater than or equal to 100 Hz.

[0009] Optionally, the switching frequency of the pulse valve can be adjusted.

[0010] Optionally, the pulse valve comprises a diaphragm layer and an actuator, and the diaphragm layer can be deformed or displaced under the action of the actuator to realize the opening or closing of the pulse valve;

[0011] The pulse valve is opened when the diaphragm layer is away from the end of the air inlet connected to the air chamber so that the air chamber is communicated with the air inlet, and the pulse valve is closed when the diaphragm layer seals the end of the air inlet connected to the air chamber.

[0012] Optionally, the depth of the air inlet is less than 5 mm.

[0013] Optionally, the output module further includes an air pressure control unit, and the air pressure control unit is used to control the air pressure in the air chamber.

[0014] Optionally, the gas distribution assembly further comprises an input module, and the input module is used to connect to a gas source device;

[0015] The air pressure control unit includes an air pressure sensor and a flow controller, wherein the flow controller is arranged between the input module and the air chamber, and the air pressure sensor is used to detect the air pressure in the air chamber and output a pressure signal;

[0016] The flow controller is configured to adjust the gas flow delivered from the input module to the air chamber in response to the pressure signal, including increasing the intake flow when the air pressure value corresponding to the pressure signal is lower than a preset value, and reducing the intake flow when the air pressure value corresponding to the pressure signal is higher than a preset value.

[0017] Optionally, at least part of the output module further includes a plasma generator, and the plasma generator is disposed in the gas chamber.

[0018] Optionally, the plasma generator comprises two working electrodes that are opposite to each other and spaced apart, both of the two working electrodes comprise a discharge electrode, and at least one of the working electrodes further comprises a dielectric film, and the dielectric film is arranged on the opposite side of the discharge electrode;

[0019] The two working electrodes are configured such that at least part of the gas in the gas chamber can pass between the two working electrodes.

[0020] Optionally, at least part of the gas chamber includes an evaporation chamber, the evaporation chamber is used to accommodate a solid or liquid evaporation source, and the evaporation chamber has an opening facing the pulse valve.

[0021] Optionally, a plurality of the output modules include the evaporation chamber, and the pulse valve between at least two of the output modules having the evaporation chamber can be independently switched.

[0022] Optionally, the gas distribution assembly includes a plurality of input modules, and the input modules are used to connect to a gas source device;

[0023] Each of the input modules is connected to at least one of the output modules, and each of the output modules is connected to one of the input modules;

[0024] Between at least two of the plurality of input modules, the pulse valve of the output module connected thereto can be opened and closed independently.

[0025] Optionally, the gas distribution assembly includes a shower head, and the end of the gas inlet is located on a terminal surface of the shower head.

[0026] Optionally, the terminal surface is a plane, a convex surface or a concave surface, and the planar or curved distribution of the plurality of air inlets includes that the ends of the air inlets are distributed on the terminal surface.

[0027] Optionally, for each of the input modules, the ends of the air inlets of the output modules connected thereto are evenly distributed on the terminal surface of the shower head.

[0028] Optionally, the multiple input modules include a first input module and a second input module, and the pulse valve of the output module connected to the first input module and the second input module can be independently switched;

[0029] In the output module connected to the first input module, the air inlets are distributed in a first strip area, and in the output module connected to the second input module, the air inlets are distributed in a second strip area;

[0030] The first strip-shaped areas and the second strip-shaped areas are alternately arranged on a plane along a ring line, and the first strip-shaped areas and the second strip-shaped areas extend in a radial direction of the ring line.

[0031] Optionally, the gas distribution assembly further includes an exhaust port disposed between the first strip-shaped area and the second strip-shaped area, the exhaust port being used to connect to an exhaust device to exhaust the gas in the reaction chamber, and the exhaust port being in the shape of a strip extending radially along the ring line.

[0032] Optionally, the air inlet and the air outlet are radial.

[0033] The present application also provides a substrate processing device, comprising:

[0034] A reaction chamber, used to accommodate a substrate;

[0035] A base, used for supporting the substrate;

[0036] The gas distribution assembly is used to distribute gas to the surface of the substrate.

[0037] The gas distribution assembly and substrate processing equipment disclosed in the present application have the following beneficial effects:

[0038] In the present application, a gas distribution assembly is used for a substrate processing device, the substrate processing device includes a base and a reaction chamber, the reaction chamber is used to accommodate a substrate, the base is used to carry a substrate, the gas distribution assembly is used to distribute gas to the surface of the substrate, the gas distribution assembly includes at least one output module, the output module includes an air chamber, at least one air inlet, and a pulse valve located between the air chamber and the air inlet, the air chamber is connected to at least one air inlet, the pulse valve corresponds to the air inlet one by one and is located at one end of the air inlet connected to the air chamber. The volume of the air inlet is significantly reduced relative to the interior of the entire gas distribution assembly and the pipeline, which reduces the exhaust volume and the difficulty of exhaust, thereby reducing the residual gas in the reaction chamber, reducing the mixing between the gases introduced into the reaction chamber when the pulse valves are opened twice in succession, and improving the film formation quality and the yield of the product.

[0039] Other features and advantages of the present application will become apparent from the following detailed description, or may be learned in part by the practice of the present application.

[0040] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and together with the specification are used to explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0042] Figure 1 This is a schematic diagram of the structure of the existing substrate processing equipment

[0043] Figure 2 It is a schematic diagram of the states of the first gas and the second gas in the existing reaction chamber.

[0044] Figure 3 It is a schematic diagram of the structure of the gas distribution assembly in an embodiment of the present application.

[0045] Figure 4 It is a schematic diagram of the connection between multiple air inlets and air chambers in an embodiment of the present application.

[0046] Figure 5 It is a schematic diagram of the structure of the substrate processing equipment in the embodiment of the present application.

[0047] Figure 6 Schematic diagram of the state of the first gas and the second gas in the reaction chamber in an embodiment of the present application.

[0048] Fig. 7A It is a schematic diagram of the pulse valve closing in the embodiment of the present application.

[0049] Figure 7B It is a schematic diagram of the opening of the pulse valve in the embodiment of the present application.

[0050] Fig. 8A It is a schematic diagram of a horizontally placed plasma generator in an embodiment of the present application.

[0051] Figure 8B It is a schematic diagram of a vertically mounted plasma generator in an embodiment of the present application.

[0052] Fig. 9 Schematic diagram of an air chamber with an evaporation chamber in an embodiment of the present application.

[0053] Fig. 10A It is a schematic diagram of a substrate processing device with a planar shower head in an embodiment of the present application.

[0054] Fig. 10B It is a schematic diagram of a substrate processing device having a convex shower head in an embodiment of the present application.

[0055] Fig. 10C It is a schematic diagram of a substrate processing device having a concave shower head in an embodiment of the present application.

[0056] Fig.11 It is a schematic diagram of a batch substrate processing equipment in an embodiment of the present application.

[0057] Fig.12 yes Fig.11 Schematic diagram of the AA section expansion.

[0058] Description of reference numerals:

[0059] 100. Gas distribution assembly;

[0060] 110, input module; 110a, first input module; 110b, second input module; 120, output module; 120a, first output module; 120b, second output module; 121, air chamber; 1211, evaporation chamber; 122, air inlet; 123, pulse valve; 1231, diaphragm layer; 1232, actuator; 124, air pressure control unit; 1241, air pressure sensor; 1242, flow controller; 125, plasma generator; 1251, discharge electrode; 1252, dielectric film; 126, temperature controller; 127, shower head; 1271, terminal surface; 128, exhaust port;

[0061] 101, first strip area; 102, second strip area; 103, gap;

[0062] 200, base; 301, reaction chamber; 400, gas source device; 500, exhaust device; 900, substrate. DETAILED DESCRIPTION

[0063] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be more comprehensive and complete and fully convey the concept of the example embodiments to those skilled in the art.

[0064] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present application. However, those skilled in the art will appreciate that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps, etc. can be adopted. In other cases, known methods, devices, realizations or operations are not shown or described in detail to avoid blurring the various aspects of the application.

[0065] The present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be understood as limiting the present application.

[0066] See also Figure 3 and Figure 4 , the present application embodiment provides a gas distribution assembly 100. Figure 5 The gas distribution assembly 100 is used in a substrate processing device. The substrate processing device includes a base 200 and a reaction chamber 301. The reaction chamber 301 is used to accommodate a substrate 900. The base 200 is at least partially located in the reaction chamber 301. The base 200 is used to support the substrate 900. The gas distribution assembly 100 is used to distribute gas to the surface of the substrate 900. The gas distribution assembly 100 is connected to the gas source device 400. The gas raw material in the gas source device 400 is transmitted to the surface of the substrate 900 exposed in the reaction chamber 301 through the gas distribution assembly 100. The substrate processing device also includes an exhaust device 500, which is connected to the reaction chamber 301 and is used to exhaust the gas in the reaction chamber 301.

[0067] For example, the substrate processing equipment is used for ALD, evaporation and other processes, but is not limited thereto and depends on the specific circumstances.

[0068] For example, the substrate 900 is a single crystal silicon wafer, but not limited thereto. The substrate 900 may also be any substrate for carrying a semiconductor integrated circuit known to those skilled in the art, and the present application does not limit it. For example, the substrate 900 may include a semiconductor material, for example, at least one of silicon (for example, single crystal silicon Si), silicon germanium (SiGe), germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), and silicon carbide (SiC). In some embodiments, the substrate 900 may be a single-layer structure, for example, a single-layer structure made of at least one of silicon, germanium, gallium arsenide, etc., but not limited thereto. The substrate 900 may also be a multi-layer structure, for example, a laminate of silicon and silicon germanium, a laminate of silicon and silicon carbide, a composite substrate of silicon on insulator, germanium on insulator, or silicon germanium on insulator, etc. In other embodiments, the substrate 900 may also be an insulating substrate. The insulating substrate may be made of a non-conductive material such as glass, plastic or sapphire wafer, or the base 900 may also be an insulating dielectric material such as silicon dioxide (SiO 2 ) or silicon nitride (SiN).

[0069] The present application does not specifically limit the type of gas distributed by the gas distribution assembly 100 to the surface of the substrate 900. For example, the gas distribution assembly 100 can be connected to a gas source device 400 for providing a gas raw material, the gas raw material can be a process gas or a purge gas, the gas source device 400 includes, for example, a gas storage device or a gas preparation device, the gas raw material can also be at least partially ionized gas, that is, the gas source device 400 can also be a RMS (Remote Plasma Source), and the gas raw material can include plasma, but is not limited thereto, depending on the specific situation.

[0070] In addition, the gas raw material can be distributed directly by the gas distribution component 100, but is not limited to this. It can also be distributed after being heated, cooled or mixed in the gas distribution component 100. It can also be distributed after being (again) ionized into plasma in the gas distribution component 100 (to be explained in subsequent embodiments), depending on the specific situation.

[0071] See also Figures 3 to 5 As shown, the gas distribution assembly 100 includes at least one output module 120, the output module 120 includes a gas chamber 121, at least one gas inlet 122, and a pulse valve 123 located between the gas chamber 121 and the gas inlet 122. The gas chamber 121 is connected to at least one gas inlet 122. The pulse valve 123 corresponds to the gas inlet 122 one by one and is located at one end of the gas inlet 122 connected to the gas chamber 121. The gas inlet 122 is distributed on a plane or a curved surface. Distributing the process gas to the surface of the substrate 900 includes that when the pulse valve 123 is opened, the process gas in the gas chamber 121 is transported from the gas inlet 122 to the reaction chamber 301.

[0072] Generally, the gas distribution assembly 100 further includes an input module 110, the input module 110 is used to connect to the gas source device 400, the output module 120 is correspondingly connected to the corresponding input module 110, and the connection between the input module 110 and the output module 120 includes that the input module 110 is connected to the gas chamber 121. Figure 3 As shown, one input module 110 can be connected to at least one output module 120. It can be understood that one output module 120 is connected to one input module 110. Thus, the gas raw material in the gas source device 400 is transmitted from the input module 110 to the corresponding connected output module 120, and then transmitted to the surface of the substrate 900 exposed in the reaction chamber 301.

[0073] Figure 3In the illustrated embodiment, the gas distribution assembly 100 includes a plurality of input modules 110, and one input module 110 is connected to a plurality of output modules 120, but is not limited thereto. In some embodiments, the gas distribution assembly 100 includes an input module 110, and one or more output modules 120 are connected to the same input module 110. In some embodiments, the input modules 110 and the output modules 120 are connected in a one-to-one correspondence. In some embodiments, the number of output modules 120 connected to each input module 110 may be the same or different, depending on the specific circumstances.

[0074] The output module 120 includes an air chamber 121, at least one air inlet 122, and a pulse valve 123 located between the air chamber 121 and the air inlet 122. The air chamber 121 is connected to at least one air inlet 122. The pulse valve 123 corresponds to the air inlet 122 one by one and is located at the end where the air inlet 122 is connected to the air chamber 121, that is, the front end of the pulse valve 123 is connected to the air chamber 121, and the rear end of the pulse valve 123 is directly connected to the air inlet 122. Preferably, the air chamber 121 can be directly connected to the front end of the pulse valve 123, but it is not limited thereto, and other components can be arranged between the air chamber 121 and the front end of the pulse valve 123.

[0075] In some embodiments, an air chamber 121 is connected to an air inlet 122, such as Figure 3 As shown, but not limited thereto, one air chamber 121 may also be connected to multiple air inlets 122, such as Figure 4 As shown, the number of gas inlets 122 connected to each gas chamber 121 can be the same or different, depending on the specific situation. In the gas distribution component 100, the multiple gas inlets 122 are distributed in a planar manner, for example, distributed in a plane. Distributing the process gas to the surface of the substrate 900 includes that when the pulse valve 123 is opened, the process gas in the gas chamber 121 is transported from the gas inlet 122 to the reaction chamber 301, that is, the gas distribution component 100 introduces gas into the reaction chamber 301 in a planar manner through the multiple gas inlets 122, thereby distributing the gas to the substrate 900 in a planar manner.

[0076] It should be noted that the multiple gas inlets 122 in the gas distribution assembly 100 can be distributed in a planar manner to distribute gas to the substrate 900 in a planar manner, but is not limited thereto. The multiple gas inlets 122 can also be distributed in a curved surface. The specific curved surface distribution method will be described in subsequent embodiments.

[0077] In the existing substrate processing equipment, the control valve 32 is set on the pipeline. Before changing the gas, it is necessary to discharge the gas remaining in the pipeline and the nozzle 31 at the rear end of the control valve 32. The gas to be discharged is large and easy to remain, resulting in mixing between the gases introduced successively within a cycle T. After the mixed first gas and the second gas undergo a chemical reaction in the gaseous state, the product is deposited on the substrate surface, reducing the uniformity of the atomic layer deposition film.

[0078] In this embodiment, when the pulse valve 123 is opened, the gas in the gas chamber 121 is transported to the reaction chamber 301 through the gas inlet 122, so that the gas distribution assembly 100 distributes the gas to the surface of the substrate 900; when the pulse valve 123 is closed, the gas at the front end of the pulse valve 123, including but not limited to the gas in the gas chamber 121, cannot enter the reaction chamber 301, and since the rear end of the pulse valve 123 is directly connected to the gas inlet 122, the rear end of the pulse valve 123 only has the gas inlet 122. Figures 1 to 5 As shown, the volume of the air inlet 122 is much smaller than the interior of the entire gas distribution assembly 100 and the pipeline, and because the substrate processing equipment is in working condition, the reaction chamber 301 is always exhausted by negative pressure. By reducing the volume outside the reaction chamber 301, the exhaust volume is reduced, and the exhaust difficulty is reduced, thereby reducing the residual gas in the reaction chamber 301 and reducing the mixing between the gases introduced into the reaction chamber 301 when the pulse valve 123 is opened twice in succession, thereby improving the film formation quality and the product yield.

[0079] In some embodiments, the switching frequency of the pulse valve 123 is greater than or equal to 100 Hz, that is, the switching period is less than or equal to 10 milliseconds. Optionally, the switching frequency is less than or equal to 10 kHz. For example, the switching period of the pulse valve 123 is 10 milliseconds, 1 millisecond, and 10 microseconds. The switching period of the pulse valve 123 is less than or equal to 10 milliseconds, that is, the pulse valve 123 can achieve high-frequency switching.

[0080] The gas distribution assembly 100 can be configured such that each time the pulse valve 123 is opened, the gas is uniformly distributed to the surface of the substrate 900 through the multiple gas inlets 122. However, due to the fact that the exhaust device 500 connected to the reaction chamber 301 is always open, the temperature distribution of the substrate 900, and the reaction consumption, the uniformity of the gas concentration distribution in the reaction chamber 301 decreases as the switching cycle is prolonged during one switching cycle. Therefore, the pulse valve 123 can realize high-frequency switching, and the gas in the reaction chamber 301 can be discharged and refreshed in a very short time, so as to avoid the uniformity of the gas concentration distribution in the reaction chamber 301 decreasing due to the extension of the switching cycle, and improve the overall uniformity of the process gas distribution in the reaction chamber 301, thereby making the substrate 900 processed uniformly.

[0081] In addition, when two or more gases are alternately introduced into the gas distribution assembly 100, the pulse valve 123 can realize high-frequency switching, which can improve the processing efficiency of the substrate 900. For example, the process implemented by the substrate processing equipment is ALD, and the pulse valve 123 of the gas distribution assembly 100 is switched at a high frequency to alternately provide two different process gases to the substrate 900, which can improve the deposition efficiency of ALD.

[0082] Optionally, the switching frequency of the pulse valve 123 can be adjusted. Thus, the switching frequency of the pulse valve 123 can be specifically set according to the process conditions of the specific substrate 900 treatment.

[0083] In some embodiments, the pulse valve 123 includes a diaphragm layer 1231 and an actuator 1232, and the diaphragm layer 1231 can be deformed or displaced under the action of the actuator 1232 to realize the opening or closing of the pulse valve 123. That is, the pulse valve 123 includes a diaphragm valve, and the diaphragm valve can realize millisecond or even microsecond switching (for example, the switching cycle is 10 microseconds to 10 milliseconds), thereby improving the processing uniformity of the substrate 900 and improving the deposition efficiency.

[0084] The diaphragm layer 1231 can be deformed or displaced under the action of the actuator 1232. For example, the actuator 1232 and the diaphragm layer 1231 are formed as one body, and the actuator 1232 vibrates to drive the diaphragm layer 1231 to deform or displace, or the actuator 1232 and the diaphragm layer 1231 are formed separately, and the actuator 1232 vibrates to hit or press the diaphragm layer 1231 to deform the diaphragm layer 1231, but it is not limited to this, as long as the actuator 1232 can cause the diaphragm layer 1231 to alternately open or close one end of the air inlet 122 connected to the air chamber 121. Optionally, the diaphragm layer 1231 can be a metal film, such as stainless steel, and the actuator 1232 is, for example, a piezoelectric element actuator or an electromagnetic actuator, but it is not limited to this, as long as the diaphragm layer 1231 can be deformed, the actuator 1232 can be controlled to drive the diaphragm layer 1231 to move at a high frequency.

[0085] The pulse valve 123 corresponds to the air inlet 122 one by one and is located at one end of the air inlet 122 connected to the air chamber 121. The pulse valve 123 is opened including the end of the diaphragm layer 1231 away from the air inlet 122 connected to the air chamber 121 so that the air chamber 121 is connected to the air inlet 122. The pulse valve 123 is closed including the end of the diaphragm layer 1231 that blocks the air inlet 122 connected to the air chamber 121. For example, see Fig. 7A When the pulse valve 123 is closed, the diaphragm layer 1231 covers and seals the end of the gas inlet 122 connected to the gas chamber 121, and the gas in the gas chamber 121 cannot enter the reaction chamber 301 through the gas inlet 122; see the attached Figure 7B When the pulse valve 123 is opened, the diaphragm layer 1231 is at least away from one end of the gas chamber 121 connected to the gas inlet 122, so that the gas chamber 121 is connected to the gas inlet 122, and the gas in the gas chamber 121 enters the reaction chamber 301 through the gas inlet 122. The gas flow path is shown by the arrow in the figure.

[0086] It should be noted that the pulse valve 123 may include a diaphragm valve, but is not limited thereto. The pulse valve 123 may also include other electrically controlled valves as long as they can achieve millisecond or even microsecond high-speed switching.

[0087] In some embodiments, the depth of the air inlet 122 is less than 5 mm. Preferably, the depth of the air inlet 122 is less than 3 mm; preferably, the depth of the air inlet 122 is less than 1 mm. It can be understood that the smaller the volume of the air inlet 122, the smaller the volume outside the reaction chamber 301, the smaller the amount of exhaust required between two consecutive air intakes in the reaction chamber 301, the lower the exhaust difficulty, the shorter the exhaust time, the less residual gas in the reaction chamber 301, and the less mixing between the gases introduced into the reaction chamber 301 when the pulse valve 123 is opened twice. Therefore, by setting the depth of the air inlet 122 to be less than 5 mm, such as the depth of the air inlet 122 is 1-5 mm, or the depth of the air inlet 122 is 1-3 mm, the film quality can be improved.

[0088] In some embodiments, the output module 120 further includes an air pressure control unit 124, which is used to control the air pressure in the air chamber 121. It can be understood that before the pulse valve 123 is opened, the reaction chamber 301 is in a stable negative pressure state. After the pulse valve 123 is opened, the amount of gas input into the reaction chamber 301 through the air inlet 122 is related to the air pressure difference between the air chamber 121 and the reaction chamber 301. The pulse valve 123 is intermittently opened or closed, and the gas in the air chamber 121 is input into the reaction chamber 301 through the air inlet 122. The air pressure in the air chamber 121 is adjusted by the air pressure control unit 124, which can reduce the air pressure fluctuation in the air chamber 121, so that the single air intake amount of the air inlet 122 is stable. Therefore, the air intake of multiple air inlets 122 in the gas distribution assembly 100 can be uniform by controlling the air pressure in the air chamber 121, which is conducive to uniform and stable distribution of gas to the surface of the substrate 900.

[0089] See also Figure 3 As shown, the gas distribution assembly 100 also includes an input module 110 for connecting to the gas source device 400, and the air pressure control unit 124 includes an air pressure sensor 1241 and a flow controller 1242. The flow controller 1242 is arranged between the input module 110 and the air chamber 121. The air pressure sensor 1241 is used to detect the air pressure in the air chamber 121 and output a pressure signal. The flow controller 1242 is configured to be able to adjust the gas flow delivered from the input module 110 to the air chamber 121 in response to the pressure signal.

[0090] The air pressure sensor 1241 may be disposed on the air chamber 121, but is not limited thereto, as long as it can detect the air pressure in the air chamber 121 and output a pressure signal. Figure 3In the illustrated embodiment, the air pressure control unit 124 further includes a feedback circuit for transmitting a pressure signal to the flow controller 1242, but is not limited thereto. The pressure signal may also be transmitted by, for example, wireless communication, as long as the pressure signal can be transmitted to the flow controller 1242. The flow controller 1242 may include, for example, an adjustable valve disposed on a pipeline connecting the air chamber 121 and the input module 110, but is not limited thereto, as long as the gas flow delivered from the input module 110 to the air chamber 121 can be adjusted in response to the pressure signal.

[0091] The flow controller 1242 controls the flow between the input module 110 and the air chamber 121 in real time according to the air pressure in the air chamber 121, that is, the intake flow rate is increased when the air pressure value corresponding to the pressure signal is lower than the preset value, and the intake flow rate is reduced when the air pressure value corresponding to the pressure signal is higher than the preset value, thereby controlling the air pressure in the air chamber 121 and stabilizing it, thereby improving the reaction uniformity in the reaction chamber 301.

[0092] See also Figure 3 , Fig. 8A and Figure 8B As shown, at least part of the output module 120 further includes a plasma generator 125, which is disposed in the gas chamber 121. By disposing the plasma generator 125 in the gas chamber 121, the plasma generator 125 can ionize the gas raw material, and the input module 110 does not need to be connected to a plasma source, and the output module 120 can provide plasma, which can reduce the cost and volume of the substrate processing equipment; or the input module 110 is connected to a plasma source, that is, the gas source device 400 is a plasma source, and the gas raw material can be ionized again in the gas chamber 121, and then input into the reaction chamber 301 through the gas inlet 122 and distributed to the surface of the substrate 900.

[0093] See also Fig. 8A and Figure 8B As shown, the plasma generator 125 includes two working electrodes that are opposite and spaced apart, both of which include a discharge electrode 1251, and at least one of the working electrodes further includes a dielectric film 1252, which is disposed on the opposite side of the discharge electrode 1251. In other words, the plasma generator 125 is a dielectric barrier discharge (DBD) plasma generator 125.

[0094] Optionally, the dielectric film 1252 is formed on the entire outer surface of the discharge electrode 1251 .

[0095] The two discharge electrodes 1251 can be connected to a high frequency voltage source. The two working electrodes are configured so that at least part of the gas in the gas chamber 121 can pass between the two working electrodes. For example, the two working electrodes are disposed on the side walls of the gas chamber 121, and the gas can pass through the space between the two working electrodes to be ionized, and then enter the reaction chamber 301 through the gas inlet 122 when the pulse valve 123 is opened. Fig. 8A As shown; or two working electrodes are successively arranged on the gas flow path in the gas chamber 121, and both working electrodes include hollow parts, for example, the two working electrodes are formed into a ring or a mesh, etc., and the gas can pass through the hollow part of one working electrode, pass into the space between the two working electrodes to be ionized, pass through the hollow part of the other working electrode, and then pass into the reaction chamber 301 through the gas inlet 122 when the pulse valve 123 is opened, as shown Figure 8B As shown; but not limited to this, as long as the gas can pass between the two electrodes.

[0096] It should be noted that the plasma generator 125 can be a dielectric barrier discharge plasma generator 125, and the two working electrodes are connected to a high-frequency power supply, but it is not limited to this. Other types of plasma generators 125 can also be set in the output module 120, as long as they can ionize the gas to generate plasma.

[0097] In addition, it should be noted that a plasma generator 125 is disposed in the gas chamber 121 of the gas distribution assembly 100 , and this application does not specifically limit whether the substrate processing equipment including the gas distribution assembly 100 also includes other plasma generators 125 .

[0098] See also Fig. 9 In the illustrated embodiment, at least part of the gas chamber 121 includes an evaporation chamber 1211, which is used to accommodate a solid or liquid evaporation source, and has an opening facing the pulse valve 123. Thus, the gas distribution assembly 100 can be used to evaporate a thin film on the substrate 900.

[0099] In some embodiments, the gas chamber 121 of the plurality of output modules 120 includes an evaporation chamber 1211, and the pulse valve 123 between at least two output modules 110 having the evaporation chamber 1211 can be independently switched. For example, the plurality of output modules 120 include a first output module 120a and a second output module 120b, and the pulse valve 123 between the first output module 120a and the second output module 120b can be independently switched. Thus, the evaporation chambers 1211 of the first output module 120a and the second output module 120b accommodate different evaporation sources, and the composite film can be evaporated on the substrate 900. It can be understood that the composite film can be a film formed by alternating stacking of two materials, but it is not limited thereto. The plurality of output modules 120 can include the first to Nth output modules, and the pulse valves 123 between them can be independently switched. The gas distribution assembly 100 can be used to evaporate a composite film of N materials alternately stacked on the substrate 900, where N≥3.

[0100] Optionally, the gas distribution assembly 100 further includes a temperature controller 126, which is used to control the temperature of an evaporation source contained in the evaporation chamber 1211 so that the evaporation source undergoes a physical reaction and / or a chemical reaction to generate gas, and the gas is input into the reaction chamber 301 through the gas inlet 122 when the pulse valve 123 is opened.

[0101] Compared with the solution of directly introducing gas through the input module 110, the structure of the gas distribution assembly 100 is simpler by preparing gas in the gas chamber 121. In addition, directly preparing gas in the gas chamber 121 is suitable for providing chemically unstable gas and gas that is not easy to store. In some embodiments, the gas chamber 121 includes an evaporation chamber 1211, and a plasma generator 125 is disposed in the gas chamber 121, so that the gas distribution assembly 100 can be used for a plasma-assisted evaporation process.

[0102] In one embodiment provided in the present application, the gas distribution assembly 100 includes a plurality of input modules 110, the input modules 110 are used to connect to the gas source device 400, each input module 110 is connected to at least one output module 120, each output module 120 is connected to one input module 110, and the pulse valve 123 of the output module 120 connected to at least two input modules 110 among the plurality of input modules 110 can be independently switched. Thus, the gas distribution assembly 100 can alternately introduce different gases into the reaction chamber 301 by controlling the pulse valves 123 of the output modules 120 connected to the at least two input modules 110 to be switched alternately.

[0103] In one embodiment, the gas distribution assembly 100 includes a plurality of input modules 110, and between each input module 110, the pulse valve 123 of the output module 120 connected thereto can be independently switched; or the plurality of input modules 110 can be divided into a plurality of groups, each group can include one or more input modules 110, and between each group of input modules 110, the pulse valve 123 of the output module 120 connected thereto can be independently switched; but not limited thereto, as long as between at least two input modules 110, the pulse valve 123 of the output module 120 connected thereto can be independently switched.

[0104] For example, Figure 3 , Figure 5 As shown, the gas distribution component 100 includes two input modules 110, namely a first input module 110a and a second input module 110b. The gas source device 400 connected to the first input module 110a provides the first gas, and the gas source device 400 connected to the second input module 110b provides the second gas. Within a cycle period T, the pulse valve 123 of the output module 120 connected to the first input module 110a is controlled to open at time t1 and closed at time t2; the pulse valve 123 of the output module 120 connected to the second input module 110b is controlled to open at time t3 and closed at time t4, so that the gas distribution component 100 can alternately introduce the first gas and the second gas into the reaction chamber 301.

[0105] Due to the use of the gas distribution assembly 100 provided in the embodiment of the present application, the volume at the rear end of the pulse valve 123 is significantly reduced, the exhaust volume is reduced, and the exhaust difficulty is reduced, thereby reducing the residual gas in the reaction chamber 301, reducing the mixing between the gases introduced into the reaction chamber 301 when the pulse valve 123 is opened twice in succession, and reducing the mixing rate between the first gas and the second gas. Figure 6 As shown, the pulse valve 123 can realize high-frequency switching, thereby preventing the uniformity of the gas concentration distribution in the reaction chamber 301 from decreasing due to the extension of the switching cycle, thereby improving the overall uniformity of the process gas distribution in the reaction chamber 301, and thus improving the film formation quality and product yield.

[0106] For example, the substrate processing device includes a gas distribution assembly 100, and the substrate processing device is used to perform atomic layer deposition on a substrate 900. For example, when atomic layer deposition of a titanium nitride (TiN) film layer is performed, the first gas is titanium chloride (TiCl4), and the second gas is ammonia (NH3), wherein the output module 120 connected to the first input module 110a and the output module 120 connected to the second input module 110b alternately input TiCl4 and NH3 to the reaction chamber 301, which can achieve atomic layer deposition of a TiN film layer on the surface of the substrate 900, improve the uniformity of the film thickness, and improve the deposition efficiency.

[0107] For example, a plasma generator 125 is disposed in the gas chamber 121 of the output module 120 for introducing the second gas. The plasma generator 125 can ionize at least a portion of the second gas to generate plasma, thereby achieving plasma-assisted atomic layer deposition and further improving the efficiency of atomic layer deposition.

[0108] It should be noted that the substrate processing equipment includes a gas distribution assembly 100, and the substrate processing equipment is used to perform atomic layer deposition on the substrate 900. The film layer of the atomic layer deposition is not limited to TiN, and the specific film layer can be determined according to the situation. A plasma generator 125 can be set in any gas chamber 121 connected to any input module 110 in the multiple input modules 110 to achieve plasma-assisted atomic layer deposition and further improve the efficiency of atomic layer deposition. For example, a plasma generator 125 is set in each gas chamber 121, or a plasma generator 125 is set in all gas chambers 121 connected to some input modules 110 in the multiple input modules 110, or a plasma generator 125 is set in some gas chambers 121 in the multiple gas chambers 121 connected to an input module 110, depending on the situation. It should be understood that the above embodiments are only exemplary descriptions, and the plasma generator 125 can also have other settings, and the specific embodiments are no longer exhaustive.

[0109] See also Figures 10A-10C In the illustrated embodiment, the gas distribution assembly 100 includes a shower head 127, and the gas inlet 122 is located in the shower head 127. It is understood that the terminal surface 1271 of the shower head 127 can be a plane, and the gas inlet 122 is located in the shower head 127. For example, the gas inlet 122 is a through hole in the shower head 127, and the diaphragm layer 1231 covers one end of the through hole connected to the gas chamber 121, and the end of the through hole is located on the terminal surface 1271 of the shower head 127.

[0110] In one embodiment, the ends of all the air inlets 122 are evenly distributed on the terminal surface 1271 of the shower head 127, for example, in an array or an annular arrangement. In one embodiment, all the air inlets 122 have the same size, but this is not limited to the size of the air inlets 122. The sizes of the air inlets 122 may be partially the same or completely different. The distribution of the air inlets 122 may not be uniform, and may be set based on the process performed by the substrate processing equipment.

[0111] In some embodiments, the plurality of input modules 110 include a first input module 110a and a second input module 110b, both of which are used to connect to the gas source device 400, and the first input module 110a and the second input module 110b are respectively connected to at least one output module 120, and each output module 120 is connected to one of the first input module 110a and the second input module 110b, and between the first input module 110a and the second input module 110b, the pulse valve 123 of the output module 120 connected thereto can be independently switched, wherein the output module 120 connected to the first input module 110a, the end of its air inlet 122 is evenly distributed on the terminal surface 1271 of the spray head 127, and the output module 120 connected to the second input module 110b, the end of its air inlet 122 is evenly distributed on the terminal surface 1271 of the spray head 127. Thus, the gas distribution assembly 100 can be used to uniformly and alternately introduce two gases into the reaction chamber 301, but this is not limited to the above. The number of input modules 110 can be greater than two. For each input module 110, the end of the gas inlet 122 of the output module 120 connected thereto is uniformly distributed on the terminal surface 1271 of the shower head 127, depending on the specific situation.

[0112] See also Figures 10A-10C The gas distribution assembly 100 is applied to a substrate processing device, and the substrate processing device includes the gas distribution assembly 100 and a base 200 for carrying a substrate 900. Optionally, the base 200 can move to approach or move away from the gas distribution assembly 100. The reaction chamber 301 includes a space between the base 200 and the terminal surface 1271. Generally, the reaction chamber 301 is connected to the exhaust device 500 (combined with Figure 5 As shown), the exhaust device 500 provides negative pressure to exhaust the gas in the reaction chamber 301. The arrow in the figure indicates the gas flow direction when the exhaust device 500 exhausts the gas in the reaction chamber 301. The gas exhausted by the exhaust device 500 includes the gas in the reaction chamber 301 and the gas inlet 122.

[0113] For example, the terminal surface 1271 is a flat surface, a convex surface or a concave surface, respectively. Fig. 10A , Fig. 10B as well as Fig. 10C As shown, the end of the air inlet 122 is located on the terminal surface 1271, so that the end of the air inlet 122 is distributed on a plane or a curved surface.

[0114] It can be understood that when the ends of the gas inlets 122 are distributed on the convex surface or the concave surface, the extension directions of the plurality of gas inlets 122 are parallel to each other. Optionally, when the gas distribution device 100 is applied to a substrate processing device, the extension directions of the plurality of parallel gas inlets 122 are perpendicular to the surface of the substrate 900 supported by the base 200, such as Fig. 10A and Fig. 10C In some embodiments, the extension direction of the plurality of air inlets 122 is perpendicular to the section of the terminal surface 1271 at the intersection with the terminal surface 1271, as shown in FIG. Fig. 10B As shown, but not limited thereto, in some embodiments, the extension direction of the air inlet 122 can be specifically set according to the process performed by the substrate processing equipment.

[0115] For example, the reaction chamber 301 is connected to the exhaust device 500, including that the shower head 127 and the outer edge of the base 200 form a circumferential gap 103, and the exhaust device 500 is connected to the reaction chamber 301 through the gap 103, and the exhaust device 500 can exhaust the gas in the reaction chamber 301 from the gap 103. In some embodiments, the substrate processing equipment further includes a chamber body accommodating the reaction chamber 301, and the exhaust device 500 is connected to the chamber body and is connected to the reaction chamber 301 through the gap 103.

[0116] like Fig. 10A In the embodiment shown, the terminal surface 1271 of the shower head 127 is a plane, and the structure is simple. Fig. 10B In the embodiment shown, the terminal surface 1271 of the shower head 127 is set as a convex surface, which can increase the width of the gap 103 without increasing the volume of the reaction chamber 301, reduce the exhaust volume while improving the exhaust efficiency, and further reduce the mixing degree between the gases introduced into the reaction chamber 301 twice. Fig. 10C In the illustrated embodiment, the terminal surface 1271 of the shower head 127 is a concave surface, which can increase the residence time of the gas in the reaction chamber 301 and improve the gas utilization rate; in addition, it can be understood that when exhausting the gas in the reaction chamber 301, the narrower the gap 103 is, the lower the exhaust efficiency of the exhaust device 500 is.

[0117] It should be noted that when the terminal surface 1271 of the shower head 127 is a convex surface or a concave surface, there is no specific limitation on whether the convex surface or the concave surface is regular, as long as it is a convex surface or a concave surface as a whole.

[0118] See also Figure 3 , Fig.11 and Fig.12In the illustrated embodiment, the gas distribution assembly 100 includes a plurality of input modules 110, and the plurality of input modules 110 include a first input module 110a and a second input module 110b. Between the first input module 110a and the second input module 110b, the pulse valve 123 of the output module 120 connected thereto can be independently switched. In the output module 120 connected to the first input module 110a, the gas inlet 122 is distributed in the first strip region 101, and in the output module 120 connected to the second input module 110b, the gas inlet 122 is distributed in the second strip region 102. The first strip region 101 and the second strip region 102 are alternately arranged on a plane along a ring line, and the first strip region 101 and the second strip region 102 extend radially along the ring line, and the ring line can be passed through Fig.11 It can be understood that the first strip region 101 and the second strip region 102 extend in the radial direction of the ring line, including extending substantially in the radial direction of the ring line.

[0119] For example, see Fig.11 , the first strip area 101 and the second strip area 102 are rectangular, but not limited thereto. In some embodiments, the first strip area 101 and the second strip area 102 may be fan-shaped, or the radially extending sides of the first strip area 101 and the second strip area 102 along the ring line may be curves. The shapes and sizes of the first strip area 101 and the second strip area 102 may be the same or different, depending on the specific situation. The extension direction between the first strip area 101 and the second strip area 102 may not be along the radial direction of the ring line, and the extension directions of the two may be the same or different.

[0120] Optionally, the width of the first strip region 101 and the second strip region 102 on the ring line is smaller than the base 900. Optionally, the distribution range of the air inlets 122 in the first strip region 101 and the second strip region 102 has a radial length along the ring line greater than the base 900.

[0121] Optionally, in the output module 120 connected to the first input module 110a, the air inlets 122 are arranged in the first strip area 101, for example, radially along the ring line, in a single row, equidistantly arranged, or in a matrix arrangement; in the output module 120 connected to the second input module 110b, the air inlets 122 are arranged in the second strip area 102, radially along the ring line, in a single row, equidistantly arranged, or in a matrix arrangement. Optionally, the arrangement of the air inlets 122 in the first strip area 101 and the arrangement of the air inlets 122 in the second strip area 102 may be the same or different. Optionally, the arrangement of the air inlets 122 in the first strip area 101 and the arrangement of the air inlets 122 in the second strip area 102 may be uniform or uneven. This application does not make specific limitations.

[0122] In the gas distribution assembly 100 , the plurality of input modules 110 may further include a third input module to an Nth input module and an output module 120 connected thereto, where N>3, which is not specifically limited in the present application.

[0123] In one embodiment, see Fig.11 and Fig.12 The gas distribution assembly 100 further includes an exhaust port 128 disposed between the first strip region 101 and the second strip region 102, and the exhaust port 128 is used to connect the exhaust device 500 to exhaust the gas in the reaction chamber 301. Optionally, an exhaust port 128 is disposed between each pair of adjacent first strip regions 101 and second strip regions 102. Optionally, the exhaust port 128 is also in the shape of a strip or fan extending radially along the ring line. Optionally, the width of the strip exhaust port 128 along the ring line is smaller than the substrate 900. Optionally, the length of the strip exhaust port 128 along the radial direction of the ring line is greater than the substrate 900.

[0124] Fig.11 The gas distribution assembly 100 of the illustrated embodiment can be applied to a substrate processing device, which is a batch processing device. The substrate processing device includes a base 200, and the base 200 can carry a plurality of substrates 900 along a ring line. In the substrate processing device, the base 200 and the gas distribution assembly 100 can rotate relative to each other. For example, the base 200 is configured to rotate, or the gas distribution assembly 100 can rotate, or the two can rotate relative to each other or rotate in the same direction but at different speeds.

[0125] For example, when the substrate processing equipment is working, the gas distribution assembly 100 and the base 200 rotate relative to each other, the first input module 110a inputs the first gas, and the second input module 110b inputs the second gas. For an area on the substrate 900 carried on the base 200, the first strip area 101, the exhaust port 128, the second strip area 102, and the exhaust port 128 are periodically opposite, so that the area is periodically: the first gas is distributed, the first gas is removed, the second gas is distributed, and the first gas is removed. As a result, substrate 900 processing processes such as ALD, ALE, and evaporation can be performed on the surface of the substrate 900 in batches, and the rear end volume of the pulse valve 123 is significantly reduced, which reduces the exhaust volume and the exhaust difficulty, thereby reducing the residual gas in the reaction chamber 301, reducing the mixing between the gases introduced into the reaction chamber 301 when the pulse valve 123 is opened twice in succession, reducing the mixing rate between the first gas and the second gas, and improving the processing uniformity.

[0126] Furthermore, the exhaust port 128 and the gas inlet 122 are both radial, so that when the gas distribution device is applied to the substrate processing equipment, the size of the exhaust port 128 and the gas inlet 122 close to the base 200 is larger than the size of the end away from the base 200. In this way, gas diversion can be achieved, the difficulty of gas discharge from the reaction chamber 301 can be reduced, and the mixing degree of the first gas and the second gas can be further reduced. For example, the exhaust port 128 and the gas inlet 122 are both radial, including that the entire inner wall of the exhaust port 128 and the gas inlet 122 is radial, or the head end of the exhaust port 128 and the gas inlet 122 is columnar, and only the inner wall of the end is radial. Optionally, at least part of the radial inner wall ends of the exhaust port 128 and the gas inlet 122 are connected.

[0127] The present application also provides a substrate processing device, including a reaction chamber 301 for accommodating a substrate 900 ; a base 200 for carrying the substrate 900 , and the gas distribution assembly 100 disclosed above for distributing gas to the surface of the substrate 900 .

[0128] The substrate processing equipment can be used for evaporation, atomic layer deposition of thin films, or atomic layer etching, but is not limited to this. This application does not specifically limit the process performed by the substrate processing equipment.

[0129] The substrate processing apparatus of the present application can be arranged horizontally, that is, the susceptor 200 and the gas distribution assembly 100 are arranged horizontally, and the susceptor 200 and the gas distribution assembly 100 are arranged vertically. The susceptor 200 is arranged horizontally, that is, the susceptor 200 can carry the substrate 900 horizontally.

[0130] Optionally, the substrate processing apparatus of the present application can be arranged tilted or vertically, that is, the susceptor 200 and the gas distribution assembly 100 are arranged tilted or vertically, respectively, and the gas inlet surface of the gas distribution assembly 100 is arranged facing the surface of the susceptor 200 that supports the substrate 900. The susceptor 200 is arranged tilted or vertically, that is, the susceptor 200 can tilt or vertically hold the substrate 900. In this way, the footprint of the substrate processing apparatus can be reduced, and the cost can be reduced.

[0131] The terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the feature. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0132] In this application, unless otherwise clearly specified and limited, the terms "assembly", "connection" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0133] In the description of this specification, the description with reference to the terms "some embodiments", "exemplarily", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0134] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application. Therefore, any changes or modifications made in accordance with the claims and description of the present application should fall within the scope of the patent of this application.

Claims

1. A gas distribution assembly for a substrate processing device, the substrate processing device comprising a susceptor and a reaction chamber, the reaction chamber is used to accommodate a substrate, the susceptor is used to carry the substrate, the gas distribution assembly is used to distribute gas to the surface of the substrate, characterized in that: The gas distribution assembly comprises: At least one output module, the output module comprises an air chamber, at least one air inlet, and a pulse valve located between the air chamber and the air inlet, the air chamber is connected to the at least one air inlet, the pulse valve corresponds to the air inlet one by one and is located at one end of the air inlet connected to the air chamber, when the gas distribution assembly comprises a plurality of air inlets, the plurality of air inlets are distributed in a plane or a curved surface; The distributing gas to the surface of the substrate includes: when the pulse valve is opened, the gas in the gas chamber is transported to the reaction chamber through the gas inlet.

2. The gas distribution assembly according to claim 1, characterized in that The switching frequency of the pulse valve is greater than or equal to 100 Hz.

3. The gas distribution assembly according to claim 2, characterized in that The switching frequency of the pulse valve can be adjusted.

4. The gas distribution assembly according to claim 2, characterized in that The pulse valve comprises a diaphragm layer and an actuator, and the diaphragm layer can be deformed or displaced under the action of the actuator to realize the opening or closing of the pulse valve; The pulse valve is opened when the diaphragm layer is away from the end of the air inlet connected to the air chamber so that the air chamber is communicated with the air inlet, and the pulse valve is closed when the diaphragm layer seals the end of the air inlet connected to the air chamber.

5. The gas distribution assembly according to claim 1, characterized in that The depth of the air inlet is less than 5 mm.

6. The gas distribution assembly according to claim 1, characterized in that The output module also includes an air pressure control unit, which is used to control the air pressure in the air chamber.

7. The gas distribution assembly according to claim 6, characterized in that The gas distribution assembly further comprises an input module, and the input module is used to connect to a gas source device; The air pressure control unit includes an air pressure sensor and a flow controller, wherein the flow controller is arranged between the input module and the air chamber, and the air pressure sensor is used to detect the air pressure in the air chamber and output a pressure signal; The flow controller is configured to adjust the gas flow delivered from the input module to the air chamber in response to the pressure signal, including increasing the intake flow when the air pressure value corresponding to the pressure signal is lower than a preset value, and reducing the intake flow when the air pressure value corresponding to the pressure signal is higher than a preset value.

8. The gas distribution assembly according to claim 1, characterized in that At least part of the output module further includes a plasma generator, which is disposed in the gas chamber.

9. The gas distribution assembly according to claim 8, characterized in that The plasma generator comprises two working electrodes that are opposite and spaced apart, both of the two working electrodes comprise a discharge electrode, and at least one of the working electrodes further comprises a dielectric film, and the dielectric film is disposed on the opposite side of the discharge electrode; The two working electrodes are configured such that at least part of the gas in the gas chamber can pass between the two working electrodes.

10. The gas distribution assembly according to any one of claims 1-6, 8, and 9, characterized in that: At least part of the gas chamber comprises an evaporation chamber, wherein the evaporation chamber is used to accommodate a solid or liquid evaporation source, and the evaporation chamber has an opening facing the pulse valve.

11. The gas distribution assembly according to claim 10, characterized in that A plurality of the output modules include the evaporation chamber, and the pulse valve between at least two of the output modules having the evaporation chamber can be opened and closed independently.

12. The gas distribution assembly according to any one of claims 1 to 9, characterized in that: The gas distribution assembly includes a plurality of input modules, and the input modules are used to connect to a gas source device; Each of the input modules is connected to at least one of the output modules, and each of the output modules is connected to one of the input modules; Between at least two of the plurality of input modules, the pulse valve of the output module connected thereto can be opened and closed independently.

13. The gas distribution assembly according to claim 12, characterized in that The gas distribution assembly comprises a shower head, and the end of the gas inlet is located on a terminal surface of the shower head.

14. The gas distribution assembly according to claim 13, characterized in that The terminal surface is a plane, a convex surface or a concave surface, and the plurality of air inlets are distributed on a plane or a curved surface, including that the ends of the air inlets are distributed on the terminal surface.

15. The gas distribution assembly according to claim 13, characterized in that For each of the input modules, the ends of the air inlets of the output modules connected thereto are evenly distributed on the terminal surface of the shower head.

16. The gas distribution assembly according to claim 12, characterized in that The plurality of input modules include a first input module and a second input module, and the pulse valve of the output module connected to the first input module and the second input module can be opened and closed independently; In the output module connected to the first input module, the air inlets are distributed in a first strip area, and in the output module connected to the second input module, the air inlets are distributed in a second strip area; The first strip-shaped areas and the second strip-shaped areas are alternately arranged on a plane along a ring line, and the first strip-shaped areas and the second strip-shaped areas extend in a radial direction of the ring line.

17. The gas distribution assembly according to claim 16, characterized in that The gas distribution assembly further includes an exhaust port disposed between the first strip-shaped area and the second strip-shaped area, the exhaust port being used to connect to an exhaust device to exhaust the gas in the reaction chamber, and the exhaust port being in the shape of a strip extending radially along the ring line.

18. The gas distribution assembly according to claim 17, characterized in that The air inlet and the air outlet are radial.

19. A substrate processing device, characterized in that: include: A reaction chamber, used to accommodate a substrate; A base, used for supporting the substrate; The gas distribution assembly according to any one of claims 1 to 18, used to distribute gas to the surface of the substrate.

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