Preparation method of heating film and heating film

Through multi -step treatment of copper substrate, high -efficiency and stable heating membranes are prepared, the problem of high production costs in existing technologies is solved, and the effect of reducing costs and improving performance is achieved.

CN119372631APending Publication Date: 2025-01-28SHENZHEN SHENGHONGYUN TECH CO LTD

Patent Information

Application Number
CN202411961102.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2025-01-28

AI Technical Summary

Technical Problem

The existing heating film preparation process requires precise control of the layer thickness and formula ratio of the material, and the production cost is relatively high.

Method used

By pre -processing, sedimentary treatment, transfer treatment, printing, cutting treatment, and electrical connection treatment of copper substrates, the target heating film is prepared.

Benefits of technology

Improve the heat efficiency and stability of the heating film, while reducing energy consumption while reducing production costs.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention provides a preparation method of a heating film and the heating film. The method comprises the following steps: providing a copper base material; the copper base material is pretreated, and the pretreated copper base material is obtained; carrying out deposition treatment on the pretreated copper base material to obtain a copper base material with a thin film; transferring the copper base material with the film to obtain a first film; carrying out printing treatment on the first thin film to obtain a second thin film; cutting the second film according to a preset cutting condition to obtain a third film; and performing electrical connection processing on the third film to obtain a target heating film. The heating efficiency and the stability of the heating film can be improved, and the production cost can be reduced while the energy consumption is reduced.
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Description

Technical Field

[0001] The present invention relates to the technical field of heating films, and also to a method for preparing a heating film and the heating film. Background Art

[0002] The heating film is a planar heating element composed of an electrical insulating material and a heating resistor material encapsulated therein. The heating film is a new type of electric heating element that has emerged in recent years. It is manufactured by absorbing the characteristics of two electric heating elements, semiconductor materials with a large positive temperature coefficient and conductive coatings. It is mainly used for indoor heating and maintaining ambient temperature. When working, it converts electrical energy into thermal energy and transmits the thermal energy to the outside mainly in the form of radiation. The existing heating film preparation process requires precise control of the layer thickness and formula ratio of the material, and also requires special equipment and manufacturing processes, and the production cost is relatively high. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide a method for preparing a heating film and a heating film, so as to reduce the production cost of the heating film.

[0004] In order to solve the above technical problems, the technical solution of the present invention is as follows:

[0005] A first aspect of the present invention provides a method for preparing a heating film, comprising:

[0006] Provide copper substrate;

[0007] Pre-treating the copper substrate to obtain a pre-treated copper substrate;

[0008] Performing deposition treatment on the pretreated copper substrate to obtain a copper substrate with a thin film;

[0009] Performing transfer treatment on the copper substrate with the thin film to obtain a first thin film;

[0010] Performing printing on the first film to obtain a second film;

[0011] Cutting the second film according to preset cutting conditions to obtain a third film;

[0012] The third film is subjected to electrical connection treatment to obtain a target heating film.

[0013] Optionally, pre-treating the copper substrate to obtain a pre-treated copper substrate comprises:

[0014] Get the preset cropping parameters;

[0015] According to the preset cutting parameters, placing the copper substrate into a cutting device for cutting to obtain a cut copper substrate;

[0016] The cut copper substrate is subjected to a groove engraving process to obtain a pretreated copper substrate.

[0017] Optionally, the cut copper substrate is subjected to a groove process to obtain a pretreated copper substrate, comprising:

[0018] Cleaning the cut copper substrate to obtain a cleaned copper substrate;

[0019] Annealing the cleaned copper substrate to obtain an annealed copper substrate;

[0020] Performing an oxidation layer removal treatment on the annealed copper substrate to obtain a copper substrate after the oxidation layer is removed;

[0021] According to preset groove engraving parameters, the copper substrate after the oxide layer is removed is placed in a groove engraving device for groove engraving treatment to obtain a pretreated copper substrate.

[0022] Optionally, the pretreated copper substrate is subjected to a deposition treatment to obtain a copper substrate with a thin film, comprising:

[0023] Obtaining preset deposition processing parameters;

[0024] According to the preset deposition processing parameters, placing the pretreated copper substrate into a deposition device for deposition processing to obtain a deposited copper substrate;

[0025] The deposited copper substrate is cooled according to preset cooling parameters to obtain a copper substrate with a thin film.

[0026] Optionally, the copper substrate with the thin film is subjected to a transfer treatment to obtain a first thin film, comprising:

[0027] providing a transfer medium and a transfer substrate;

[0028] Coating the copper substrate with the thin film according to the transfer medium to obtain the copper substrate with the transfer medium;

[0029] Etching the copper substrate with the transfer medium to obtain an original thin film;

[0030] A transfer process is performed based on the transfer substrate and the original film to obtain a first film.

[0031] Optionally, printing the first film to obtain the second film comprises:

[0032] Provide printing screens and printing silver paste;

[0033] The printing silver paste is printed on the first film according to the printing screen and preset printing parameters to obtain a second film.

[0034] Optionally, the second film is cut according to a preset cutting condition to obtain a third film, comprising:

[0035] Provide protective film;

[0036] Cutting the protective film to obtain a target protective film;

[0037] According to the target protective film and the second thin film, a second thin film with a protective film is obtained;

[0038] Cutting the second film with the protective film according to preset cutting conditions to obtain a cut second film;

[0039] The cut second film is polished to obtain a third film.

[0040] Optionally, the third film is subjected to electrical connection processing to obtain a target heating film, comprising:

[0041] Provide target terminals;

[0042] According to the target terminal and the third film, a third film with a terminal is obtained;

[0043] The third film with terminals is subjected to insulation treatment to obtain a target heating film.

[0044] Optionally, the method further includes:

[0045] Get test parameters;

[0046] Testing the target heating film according to the test parameters to obtain test results;

[0047] A qualified heating film is determined based on the preset test qualification conditions and the test results.

[0048] A second aspect of the present invention provides a heating film, which is prepared by the heating film preparation method as described in any one of the above.

[0049] The above solution of the present invention includes at least the following beneficial effects:

[0050] The above scheme of the present invention obtains a copper substrate with a thin film by pre-treating the provided copper substrate and then performing deposition treatment, and then transferring, printing, cutting and other treatments are performed on the copper substrate with the thin film, and finally the obtained third thin film is electrically connected to obtain a target heating film, which can not only improve the heating efficiency and stability of the heating film, but also reduce production costs while reducing energy consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 It is a schematic flow chart of a method for preparing a heating film in an embodiment of the present invention. DETAILED DESCRIPTION

[0052] The exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present invention and to enable the scope of the present invention to be fully communicated to those skilled in the art.

[0053] like Figure 1 As shown, an embodiment of the present invention provides a method for preparing a heating film, comprising the following steps:

[0054] Step 101, providing a copper substrate;

[0055] Step 102, pre-treating the copper substrate to obtain a pre-treated copper substrate;

[0056] Step 103, performing a deposition treatment on the pretreated copper substrate to obtain a copper substrate with a thin film;

[0057] Step 104, performing transfer processing on the copper substrate with the thin film to obtain a first thin film;

[0058] Step 105, printing the first film to obtain a second film;

[0059] Step 106, cutting the second film according to preset cutting conditions to obtain a third film;

[0060] Step 107, performing electrical connection processing on the third film to obtain a target heating film.

[0061] The preparation method of the heating film of the embodiment of the present invention is to obtain a copper substrate with a thin film by pre-treating the provided copper substrate and then performing a deposition treatment, and then transferring, printing, cutting and other treatments on the copper substrate with the thin film, and finally electrically connecting the obtained third thin film to obtain the target heating film, which can not only improve the heating efficiency and stability of the heating film, but also reduce production costs while reducing energy consumption.

[0062] In an optional embodiment of the present invention, step 101 includes:

[0063] Step 1011, providing a plurality of original copper substrates;

[0064] Specifically, multiple original copper substrates with different electrical conductivity, thermal conductivity, performance and materials can be provided. For example, the multiple original copper substrates provided include original copper substrates made of red copper, brass, bronze, copper-plated and other materials, which are convenient for subsequent screening according to the situation to meet different needs and product performance requirements.

[0065] Step 1012: Screen the multiple original copper substrates to obtain copper substrates.

[0066] Specifically, the copper substrate should have good electrical and thermal conductivity to ensure that the heating film can efficiently transfer current and heat when working. At the same time, the copper substrate should also have a certain mechanical strength and corrosion resistance to withstand the mechanical stress and environmental corrosion that the heating film may be subjected to during use. According to the above requirements, the preset standards that can be set include: electrical conductivity greater than or equal to (Ω·m) (represents the conductivity of the material per meter length) Siemens (S)), thermal conductivity greater than or equal to 401W / (m·K), able to resist corrosion such as acid, alkali, salt, etc. Here, preset standards can also be set according to user needs, such as user needs to select copper plate as the copper substrate. According to the preset standard, a target copper substrate that meets the requirements and is used for subsequent heating film production can be screened out from multiple original copper substrates. If the obtained copper substrate is a copper plate, screening the multiple original copper substrates provided is conducive to improving product qualification rate and product quality.

[0067] In an optional embodiment of the present invention, step 102 includes:

[0068] Step 1021, obtaining preset cropping parameters;

[0069] Specifically, the preset cutting parameters may include length, width, shape, etc., which provide a basis for the subsequent cutting of the provided copper substrate to meet the required length, width, shape, etc., and are also conducive to improving production efficiency.

[0070] Step 1022, according to the preset cutting parameters, placing the copper substrate into a cutting device for cutting to obtain a cut copper substrate;

[0071] Specifically, the preset cutting parameters can be converted into control parameters that can be recognized by the cutting equipment, so that the cutting equipment can cut the copper substrate according to the preset cutting parameters to obtain the cut copper substrate with the required length, width, shape, etc.

[0072] Step 1023, performing a groove process on the cut copper substrate to obtain a pre-treated copper substrate.

[0073] In an optional embodiment of the present invention, step 1023 includes:

[0074] Step 10231, cleaning the cut copper substrate to obtain a cleaned copper substrate;

[0075] Specifically, the cut copper substrate can be placed in an ultrasonic cleaning device, and the cavitation, acceleration and straight-forward flow effects of ultrasound in the liquid can be used to directly and indirectly affect the liquid and dirt, so that the dirt layer can be dispersed, emulsified and peeled off to achieve the purpose of removing oil, dust and other impurities on the surface of the copper substrate, which will help the subsequent processes (such as coating, printing, etc.) to proceed smoothly and improve the quality of the heating film.

[0076] Step 10232, annealing the cleaned copper substrate to obtain an annealed copper substrate;

[0077] Specifically, the cleaned copper substrate can be annealed according to preset annealing parameters, such as a preset annealing parameter including: annealing temperature range of 400°C to 650°C, holding time of 1 hour to 10 hours, etc. The annealing process includes: slowly heating the cleaned copper substrate to 400°C to 650°C, and during the heating process, slowly heating up the material to avoid heating up the material too fast or too slowly to prevent problems such as internal stress and grain growth; keeping at 400°C to 650°C for 1 hour to 10 hours to recrystallize the internal structure of the copper substrate, refine the grains, adjust the structure, and eliminate structural defects. The length of the holding time directly affects the organizational morphology and performance of the copper substrate; after annealing, the copper substrate is cooled to room temperature.

[0078] Step 10233, performing an oxidation layer removal treatment on the annealed copper substrate to obtain a copper substrate after the oxidation layer is removed;

[0079] Specifically, before the oxidation layer removal treatment is performed, the surface of the annealed copper substrate can be cleaned and degreased to ensure that the surface of the copper substrate is clean and free of impurities during the oxidation layer removal treatment; the cleaned copper substrate is then immersed in a preset solution (such as sulfuric acid, hydrochloric acid or a mixed acid), and the oxidation layer removal treatment is performed according to preset oxidation removal parameters. Here, the preset oxidation removal parameters may include: a concentration range of the preset solution of 5% to 30%, an immersion temperature of room temperature to 80°C, and an immersion time of 10 minutes to 40 minutes, so as to improve the speed and effect of oxidation layer removal.

[0080] Step 10234, according to preset groove engraving parameters, the copper substrate after the oxide layer is removed is placed in a groove engraving device for groove engraving treatment to obtain a pretreated copper substrate.

[0081] Specifically, since the distribution of current in the conductor is affected by the shape and size of the conductor, the groove can change the current distribution on the surface of the copper substrate, so that the current can flow more concentratedly through a specific area, thereby generating more heat. Therefore, the copper substrate after the oxide layer is removed can be grooved according to preset groove parameters such as shape, position, length, width and depth to improve the performance of subsequent products. Here, the copper substrate can be grooved by laser etching or mechanical cutting, and the groove processing parameters are determined according to the hardness, thickness, shape, depth and width of the copper substrate. For example, the groove processing parameters when using laser etching include: a laser power range of 20 watts to 450 watts, a cutting speed of 6 mm / s to 30 mm / s, and a feed rate of 2 microns to 40 microns. The specific groove processing parameters can be selected according to the actual selected groove processing method, the size of the copper substrate, the size and shape of the groove, etc.

[0082] In an optional embodiment of the present invention, step 103 includes:

[0083] Step 1031, obtaining preset deposition processing parameters;

[0084] Specifically, the deposition process is to perform chemical vapor deposition growth on the copper substrate to form a graphene film. Here, the preset deposition process parameters include: vacuum degree is to Pa, reaction temperature range is 800℃ to 1100℃, gas flow rate range is 50 to 500 ml / min, and growth time range is 10 to 60 minutes.

[0085] Step 1032, placing the pretreated copper substrate into a deposition device for deposition according to the preset deposition processing parameters to obtain a deposited copper substrate;

[0086] Specifically, the deposition process includes: placing the pre-treated copper substrate in the center of a quartz tube in a deposition device (such as a reaction furnace); evacuating the deposition device to a vacuum degree of to Pa to remove air and other impurity gases in the deposition equipment; then introduce argon gas to raise the pressure in the deposition equipment to normal pressure, and repeat the gas replacement operation 3 to 5 times to ensure that there is almost no impurity gas such as oxygen in the deposition equipment; raise the temperature of the deposition equipment to 800°C to 1100°C, and during the heating process, continue to introduce argon gas, and keep the flow rate at 50 to 500 ml / min to maintain the inert atmosphere of the deposition equipment; when the temperature reaches the set value (such as 1020°C or 1035°C), introduce a mixed gas flow of carbon source gas (such as methane), hydrogen and argon gas, and methane decomposes under the action of high temperature and metal catalyst (copper) to produce carbon atoms, which are adsorbed and diffused on the surface of the copper substrate and gradually form a graphene layer; the growth time is 10 to 60 minutes, preferably 20 minutes, and the growth time can be determined according to the thickness and quality requirements of the required graphene. For the growth of single-layer graphene, the growth time can be shorter (such as 10 minutes), and in order to obtain a thicker graphene layer or higher quality, the growth time can be extended (such as 2 hours).

[0087] Step 1033 , cooling the deposited copper substrate according to preset cooling parameters to obtain a copper substrate with a thin film.

[0088] Specifically, after the growth process is completed, the introduction of carbon source gas and hydrogen is stopped, and argon gas is continued to be introduced, and the temperature of the deposition equipment is lowered to room temperature. The introduction of argon gas is maintained during the cooling process to prevent the graphene from being oxidized. When the temperature of the deposition equipment drops to room temperature, the argon gas is turned off, the quartz tube is opened, and the copper substrate on which graphene is grown, that is, the copper substrate with a thin film, is taken out.

[0089] In an optional embodiment of the present invention, step 104 includes:

[0090] Step 1041, providing a transfer medium and a transfer substrate;

[0091] Specifically, the transfer medium can assist the transfer of graphene on the copper substrate with the thin film from the copper substrate to the transfer substrate, and the transfer medium can be polymethyl methacrylate (PMMA); the transfer substrate is the carrier of the heating film, which provides the necessary mechanical strength and stability so that the heating film can maintain its shape and structure and is not easily deformed or damaged. The transfer substrate can be polyester resin (PET).

[0092] Step 1042, coating the copper substrate with the thin film according to the transfer medium to obtain the copper substrate with the transfer medium;

[0093] Specifically, a layer of transfer medium is coated on the surface of the copper substrate on which graphene is grown (i.e., the copper substrate with a thin film). This layer of medium will serve as a temporary support between the graphene and the copper substrate, helping the graphene to remain intact during the transfer process.

[0094] Step 1043, etching the copper substrate with the transfer medium to obtain an original thin film;

[0095] Specifically, an etching device is used to etch a copper substrate with a transfer medium to release graphene. During the etching process, the copper substrate will be gradually dissolved, while the graphene as the original film remains in place due to the support of the transfer medium.

[0096] Step 1044 , performing transfer processing on the transfer substrate and the original film to obtain a first film.

[0097] Specifically, the dried original film, i.e., graphene (with transfer medium), is closely attached to the transfer substrate by hot pressing and rolling to ensure good contact between the graphene and the transfer substrate. The pressing parameters during hot pressing include: temperature of 100°C to 200°C, pressure of 5MPa to 30MPa, and time of 8 minutes to 1 hour, that is, the original film is placed in a hot pressing device and hot pressed at a temperature of 100°C to 200°C and a pressure of 5MPa to 30MPa for 8 minutes to 1 hour to obtain a first film. The first film can be cleaned and dried to ensure that its surface is clean and free of impurities.

[0098] In an optional embodiment of the present invention, step 105 includes:

[0099] Step 1051, providing a printing screen and printing silver paste;

[0100] Specifically, according to the application requirements, the shape (such as circular, oval, rectangular, etc.), size (such as 3 mm to 20 mm in diameter) and position of the silver paste electrode are designed, and the corresponding printing screen is made so as to accurately print the silver paste electrode on the first film. The layout is determined according to the shape, size and position of the silver paste electrode, and the layout is transferred to a substrate (such as quartz, glass or metal plate) to obtain a printing screen. Printing silver paste may include silver powder, organic glue (or elastomeric resin), organic solvent and dispersant, among which silver powder is the main conductive component of printing silver paste, and has a great influence on the conductivity, stability and other properties of printing silver paste; organic glue (or elastomeric resin) provides adhesion and elasticity of printing silver paste, so that printing silver paste can fit closely with substrate and maintain conductivity when stretched or bent, and elastomeric resin can be any one of polyurethane elastomer resin, nitrile rubber, butyl rubber, acrylic rubber and vinylidene fluoride copolymer; organic solvent is used to dissolve and disperse silver powder and organic glue to form uniform silver paste, and organic solvent can be selected from any one of dipropylene glycol methyl ether, dibasic acid ester, diethylene glycol ethyl ether acetate, diethylene glycol butyl ether acetate, pine alcohol and diethylene glycol butyl ether; dispersant is used to improve the dispersibility of silver powder in organic solvent, prevent silver powder from agglomerating, and improve the stability and fluidity of silver paste, and dispersant includes polyester containing branched structure, copolymer containing acidic group, graft copolymer containing epoxy group and acrylic graft copolymer, etc.

[0101] Step 1052: Print the printing silver paste on the first film according to the printing screen and preset printing parameters to obtain a second film.

[0102] Specifically, the preset printing parameters include a printing speed of 150mm / s to 300mm / s, a printing pressure of 50N to 100N, and a printing thickness of 6 to 10μm. The printing process includes: fixing the printing screen on the printing machine to ensure that the screen is flat and has no deformation; evenly applying a layer of printing silver paste on the printing screen to ensure that the printing silver paste covers the entire pattern area; using a scraper to scrape the printing silver paste at a speed of 150mm / s to 300mm / s and a pressure of 50N to 100N to transfer it to the first film through the opening of the screen; placing the printed first film in a drying device for drying, and obtaining the second film after drying.

[0103] In an optional embodiment of the present invention, step 106 includes:

[0104] Step 1061, providing a protective film;

[0105] Specifically, the protective film provided is an insulating protective film, such as polyethylene (PE), polypropylene (PP), polyester (PET), etc. The color of the protective film can be transparent or colored, and the use of a colored protective film can improve the accuracy of subsequent cutting of the second film.

[0106] Step 1062, cutting the protective film to obtain a target protective film;

[0107] Specifically, according to the shape and size (such as length, width, diameter, etc.) of the second film, a cutting tool is used to cut the provided protective film into corresponding shapes and sizes to ensure that the protective film can completely cover the second film.

[0108] Step 1063, obtaining a second film with a protective film according to the target protective film and the second film;

[0109] Specifically, the target protective film is placed on the second film to ensure that it completely covers the effective area of ​​the second film, and the target protective film is firmly attached to the second film using an adhesive or tape, and then a roller or scraper is used to gently roll or scrape the target protective film to remove bubbles and ensure that it fits tightly with the second film, so as to obtain the second film with a protective film. The purpose of attaching the protective film to the second film is to protect the final product heating film from damage by the external environment, such as scratches, impacts, ultraviolet radiation, etc., and to prevent pollutants such as dust and oil from adhering to the heating film, thereby affecting its performance and life.

[0110] Step 1064, cutting the second film with the protective film according to preset cutting conditions to obtain a cut second film;

[0111] Specifically, the preset cutting conditions include cutting paths and cutting parameters, and the cutting parameters include: laser power of 50W to 3000W, cutting speed of 5mm / s to 50mm / s, and feed amount of 0.01mm to 0.5mm. Among them, the cutting parameters can be determined according to the cutting equipment used, the material of the second film, etc. For example, if a laser cutting equipment with a power of 300W is used and the second film is a carbon crystal heating film with a thickness of 1mm, the cutting parameters may include: laser power of 300W, cutting speed of 50mm / s, and feed amount of 0.05mm.

[0112] The cutting path can be drawn using a drawing tool based on the specific application requirements of the heating film, including its size (such as length, width or diameter), shape, power, heating area, working environment, etc., and then the original cutting path and cutting parameters are converted into control parameters that can be recognized by the cutting device and input into the cutting device, so that the cutting device cuts the second film with the protective film according to the control parameters to obtain the cut second film.

[0113] Step 1065 , grinding the cut second film to obtain a third film.

[0114] Specifically, tools such as sandpaper and a grinder may be used to remove burrs and flash from the cut edge of the second film to ensure that the third film has a flat and smooth appearance.

[0115] In an optional embodiment of the present invention, step 107 includes:

[0116] Step 1071, providing a target terminal;

[0117] Specifically, the appropriate terminal type and specification can be selected according to the current carrying capacity and application requirements of the heating film to ensure that the terminals have good conductivity and mechanical strength, as well as appropriate size and shape, so as to facilitate the connection between the final product heating film and the external circuit.

[0118] Step 1072, obtaining a third film with a terminal according to the target terminal and the third film;

[0119] Specifically, the target terminal can be firmly connected to the preset position of the third film by welding to obtain the third film with the terminal. The terminal is installed on the third film to realize the electrical connection between the heating film and the external circuit or power supply, so as to transmit electrical energy to the heating film to generate heat. Through the external terminal, the current can be flexibly distributed to different areas of the heating film to achieve a more uniform heating effect.

[0120] Step 1073, performing insulation treatment on the third film with terminals to obtain a target heating film.

[0121] Specifically, insulating materials such as insulating paint, insulating tape, etc. can be coated around the terminals to prevent current leakage and short circuit. The terminal insulation treatment is to prevent safety hazards such as current leakage, short circuit or electric shock, and ensure the safety of the heating film during use. Through insulation treatment, the terminals can be protected from environmental factors such as moisture and corrosion, thereby improving the durability and service life of the heating film.

[0122] In an optional embodiment of the present invention, the method further comprises:

[0123] Step 108, obtaining test parameters;

[0124] Specifically, it is necessary to set appropriate test parameters according to the expected demand data of the heating film, such as design specifications and application requirements. For example, the expected demand data of the heating film include: working voltage of 220V, rated power of 100W, heating film material of carbon crystal, application requirements of the heating film for home heating equipment, requiring uniform heating, safe and reliable, then according to the formula I=P / U, the working current of the heating film at rated power can be calculated: about 0.45A. In order to ensure the performance and safety of the heating film in actual applications, the set test parameters should include the normal working current of the heating film, and leave a certain margin to cope with possible current fluctuations. Therefore, the test parameters include: the minimum test current is 0.3A (about 67% of the normal working current to ensure normal operation at lower currents), and the maximum test current is 0.6A (about 1.3 times the normal working current to simulate possible current fluctuations and overload conditions).

[0125] Step 109, testing the target heating film according to the test parameters to obtain a test result;

[0126] Specifically, the test current in the test parameters is applied to the target heating film, and an ammeter is used to monitor the current value. At the same time, a resistance tester is used to monitor the resistance change of the target heating film, and the temperature change, resistance change and whether any abnormal situation occurs during the test of the target heating film are recorded. The recorded result is the test result.

[0127] Step 1010, determining a qualified heating film according to preset test qualification conditions and the test results.

[0128] Specifically, the preset test qualification conditions may include: current stability: within the set test current range, the current value of the target heating film should remain stable, and no significant fluctuations or mutations should occur; resistance change: as the test current increases, the resistance value of the target heating film should not change significantly, indicating that it has good current carrying capacity; during the test, the target heating film should not have abnormal conditions such as burning, short circuit, and open circuit. If the test results meet the preset test qualification conditions, the corresponding target heating film is a qualified heating film. By setting the preset test qualification conditions to screen the target heating film and obtain a qualified heating film, it is beneficial to improve the final quality of the heating film and user satisfaction.

[0129] A specific embodiment of the method for preparing the heating film of the embodiment of the present invention includes:

[0130] Step 111, providing a copper substrate;

[0131] Provide multiple original copper substrates of different types and materials. According to different needs, they are screened according to the preset standards of conductivity, thermal conductivity and corrosion resistance to obtain the copper substrate for the subsequent production of heating film.

[0132] Step 112, preprocessing;

[0133] The provided copper substrate is cut and then cleaned using ultrasonic cleaning equipment to remove oil, dust and other impurities on the surface of the copper substrate. The copper substrate is then annealed and the oxide layer is removed. Grooves are engraved on the copper substrate to change the current distribution on the surface of the copper substrate and improve the heating efficiency of the final product.

[0134] Step 113, deposition process;

[0135] According to preset deposition processing parameters, the pretreated copper substrate is placed in a deposition device for deposition processing, so that a graphene film is formed on the copper substrate. After the growth process is completed, it is cooled to obtain a copper substrate with a film.

[0136] Step 114, transfer processing;

[0137] A layer of transfer medium is coated on the surface of the copper substrate on which graphene is grown (i.e., the copper substrate with a thin film), and the copper substrate with the transfer medium is etched using an etching device to release the graphene. The graphene is then transferred to the transfer substrate using hot pressing to form a first thin film.

[0138] Step 115, printing process;

[0139] The silver paste is printed on the first film by screen printing, so that the first film has a conductive function, thereby forming a second film.

[0140] Step 116, cutting process;

[0141] A protective film is pasted on the second film to protect the final product heating film from damage by the external environment, such as scratches, impacts, ultraviolet radiation, etc. It can also prevent pollutants such as dust and oil from adhering to the heating film, thereby affecting its performance and life. The second film is then cut into a third film of a size and shape that meets the application requirements according to the preset cutting conditions.

[0142] Step 117, electrical connection processing.

[0143] Terminals are installed on the third film to facilitate the connection between the final product heating film and the external circuit. According to needs, the manufactured heating film can be tested, and qualified heating films can be screened and packaged to improve user satisfaction.

[0144] The preparation method of the heating film in the embodiment of the present invention uses a current test to inspect the heating film after it is manufactured, ensuring that only qualified heating films are packaged and sent to customers, which can not only improve the quality of the final product, but also improve user satisfaction; it is suitable for application scenarios with high requirements for transparency and performance.

[0145] An embodiment of the present invention further provides a heating film, which is prepared by using the method for preparing the heating film as described in any one of the above embodiments.

[0146] The heating film of the embodiment of the present invention is prepared by the method in the above embodiment. The heating film can conduct electricity quickly and generate heat when power is supplied, and has good thermal conductivity. This excellent conductivity helps to reduce energy consumption and improve energy utilization efficiency. The heating film can radiate most of the heat into the external environment, reducing pollution to the environment.

[0147] It should be noted that, in the method of the present invention, it is obvious that each component or each step can be decomposed and / or recombined. These decompositions and / or recombinations should be regarded as equivalent solutions of the present invention. In addition, the steps of performing the above series of processes can naturally be performed in chronological order according to the order of description, but do not necessarily need to be performed in chronological order. Some steps can be performed in parallel, crosswise or independently of each other.

[0148] It should be noted that, in the above-mentioned embodiments, the terms "include", "comprise" or any other variant thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "include one..." do not exclude the existence of other identical elements in the process, method, article or device including the element. In addition, it should be pointed out that the scope of the methods and devices in the implementation of the above-mentioned embodiments is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in the opposite order according to the functions involved, for example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0149] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for preparing a heating film, characterized in that: include: Provide copper substrate; Pre-treating the copper substrate to obtain a pre-treated copper substrate; Performing deposition treatment on the pretreated copper substrate to obtain a copper substrate with a thin film; Performing transfer treatment on the copper substrate with the thin film to obtain a first thin film; Performing printing on the first film to obtain a second film; Cutting the second film according to preset cutting conditions to obtain a third film; The third film is subjected to electrical connection treatment to obtain a target heating film.

2. The method for preparing a heating film according to claim 1, characterized in that: Pre-treating the copper substrate to obtain a pre-treated copper substrate comprises: Get the preset cropping parameters; According to the preset cutting parameters, placing the copper substrate into a cutting device for cutting to obtain a cut copper substrate; The cut copper substrate is subjected to a groove engraving process to obtain a pretreated copper substrate.

3. The method for preparing the heating film according to claim 2, characterized in that: The cut copper substrate is subjected to grooving treatment to obtain a pretreated copper substrate, comprising: Cleaning the cut copper substrate to obtain a cleaned copper substrate; Annealing the cleaned copper substrate to obtain an annealed copper substrate; Performing an oxidation layer removal treatment on the annealed copper substrate to obtain a copper substrate after the oxidation layer is removed; According to preset groove engraving parameters, the copper substrate after the oxide layer is removed is placed in a groove engraving device for groove engraving treatment to obtain a pretreated copper substrate.

4. The method for preparing a heating film according to claim 1, characterized in that: The pretreated copper substrate is subjected to a deposition treatment to obtain a copper substrate with a thin film, comprising: Obtaining preset deposition processing parameters; According to the preset deposition processing parameters, placing the pretreated copper substrate into a deposition device for deposition processing to obtain a deposited copper substrate; The deposited copper substrate is cooled according to preset cooling parameters to obtain a copper substrate with a thin film.

5. The method for preparing a heating film according to claim 1, characterized in that: The copper substrate with the thin film is subjected to transfer treatment to obtain a first thin film, comprising: providing a transfer medium and a transfer substrate; Coating the copper substrate with the thin film according to the transfer medium to obtain the copper substrate with the transfer medium; Etching the copper substrate with the transfer medium to obtain an original thin film; A transfer process is performed based on the transfer substrate and the original film to obtain a first film.

6. The method for preparing a heating film according to claim 1, characterized in that: Printing the first film to obtain a second film comprises: Provide printing screens and printing silver paste; The printing silver paste is printed on the first film according to the printing screen and preset printing parameters to obtain a second film.

7. The method for preparing a heating film according to claim 1, characterized in that: The second film is cut according to a preset cutting condition to obtain a third film, comprising: Provide protective film; Cutting the protective film to obtain a target protective film; According to the target protective film and the second thin film, a second thin film with a protective film is obtained; Cutting the second film with the protective film according to preset cutting conditions to obtain a cut second film; The cut second film is polished to obtain a third film.

8. The method for preparing a heating film according to claim 1, characterized in that: The third film is subjected to electrical connection processing to obtain a target heating film, comprising: Provide target terminals; According to the target terminal and the third film, a third film with a terminal is obtained; The third film with terminals is subjected to insulation treatment to obtain a target heating film.

9. The method for preparing a heating film according to claim 1, characterized in that: Also includes: Get test parameters; Testing the target heating film according to the test parameters to obtain test results; A qualified heating film is determined based on the preset test qualification conditions and the test results.

10. A heating film, characterized in that: The heating film is prepared by the method for preparing the heating film according to any one of claims 1 to 9.

Citation Information

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