Laser-induced periodic structure enhanced photoelectric detector and preparation method thereof

Abstract

The embodiment of the invention relates to the technical field of photoelectric detection, in particular to a laser-induced periodic structure enhanced photoelectric detector and a preparation method thereof, and the photoelectric detector comprises a substrate layer, a grating template layer, a bottom surface metal layer, a semiconductor layer and a surface metal layer from bottom to top; injection light is injected into the surface metal layer, surface plasmon polariton resonance is excited due to the nano grating structure of the surface metal layer, the absorption efficiency of the injection light is improved, and a wrinkle-shaped nano grating structure is arranged among the bottom surface metal layer, the semiconductor layer and the surface metal layer; the bottom surface metal layer, the semiconductor layer and the surface metal layer form a Fabry-Perot cavity structure, and after injected light enters a cavity, standing waves are formed in the cavity and interact with a material to generate an intra-cavity resonance enhancement effect; by adjusting the period of the grating structure of the grating template layer and the thickness of the semiconductor layer, multi-wavelength selection of the photoelectric detector can be realized. The photoelectric detector is simple and convenient to prepare, can be flexibly regulated and controlled and is suitable for batch production.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of photoelectric detection technology, and in particular to a laser-induced periodic structure-enhanced photoelectric detector and a method for preparing the same. Background Art

[0002] Photodetectors, as an important device that can convert optical signals into electrical signals, are widely used in optical communications, sensor detection, infrared guidance and other fields. In order to meet the diverse needs of photoelectric detection, the structures of various photodetectors have been widely studied. Among them, Schottky photodetectors have the advantages of simple structure and fast response speed, and have become an important research direction in the field of optoelectronics. However, due to the internal light emission effect, Schottky detectors are usually limited in key performance indicators such as quantum efficiency, cutoff wavelength and dark current. Especially for optical signals in the infrared band, as the energy of infrared photons decreases, the blocking effect of the Schottky barrier on hot carrier photoemission becomes obvious, which greatly reduces the detection capability of the Schottky photodetector.

[0003] The performance of Schottky photodetectors can be improved by designing and optimizing the surface or internal structure of photodetectors, such as microcavities, waveguides, metal nanoantennas, surface plasmons, and light-trapping structures to enhance light absorption. This functionalized special structure is usually achieved using conventional nanofabrication techniques, such as photolithography, electron beam lithography, and nanoimprinting. However, these conventional nanofabrication techniques still have certain limitations for the manufacture and application of photodetectors. Although photolithography and electron beam lithography techniques can accurately achieve complex structures in small areas, their manufacturing efficiency is extremely low and the cost is too high, making them unsuitable for industrial mass production of photodetectors. Although nanoimprinting can prepare nanostructures through template transfer, thereby achieving batch preparation, the imprinting template will inevitably produce losses due to the direct pressure involved in the process, and may also reduce the fidelity of the design structure and even damage the substrate material and structure. In addition, the fixed templates used in nanoimprinting technology also lack flexibility and scalability. Summary of the invention

[0004] In view of this, the embodiments of the present application propose a laser-induced periodic structure enhanced photodetector and a preparation method thereof, which can solve the technical problems of low quantum efficiency and complex preparation process of thermal electron photodetectors, can realize flexible regulation of the absorption characteristics of photodetectors, is easy to prepare, and is suitable for large-scale batch production.

[0005] In order to achieve the above-mentioned purpose, the present application proposes a laser-induced periodic structure enhanced photodetector, the photodetector comprising: a substrate layer (1), a grating template layer (2), a bottom metal layer (3), a semiconductor layer (4) and a surface metal layer (5) from bottom to top; due to the structural transfer of the grating template layer (2), the bottom metal layer (3), the semiconductor layer (4) and the surface metal layer (5) deposited above the grating template layer (2) also have a nano-grating structure; when injected light is injected into the surface metal layer (5), the nano-grating structure of the surface metal layer (5) excites surface plasmon resonance, thereby enhancing the local electric field, thereby enhancing the injected light. The invention relates to a method for improving the absorption efficiency of light, and a wrinkled nano-grating structure is provided between the bottom metal layer (3), the semiconductor layer (4) and the surface metal layer (5) to improve the efficiency of hot electron injection; the bottom metal layer (3), the semiconductor layer (4) and the surface metal layer (5) constitute a metal-semiconductor-metal structure and form a Fabry-Perot cavity structure; after the injected light enters the Fabry-Perot cavity structure, a standing wave is formed in the cavity, interacting with the material to generate an intracavity resonance enhancement effect, thereby improving the generation rate of photogenerated carriers; and by adjusting the period of the grating structure of the grating template layer (2) and the thickness of the semiconductor layer (4), multi-wavelength selection of the photodetector can be achieved.

[0006] In order to achieve the above-mentioned purpose, the present application also proposes a method for preparing a photodetector with laser-induced periodic structure enhancement, comprising: cleaning a substrate as a substrate layer (1), and preparing a template precursor layer (6) on the substrate layer (1); using a pulsed laser to scan and irradiate the grating template precursor layer (6) to generate a laser-induced surface periodic structure to form a grating template layer (2); preparing a metal material on the grating template layer (2) to form a bottom metal layer (3); preparing a semiconductor material on the bottom metal layer (3) to form a semiconductor layer (4); preparing a metal material on the semiconductor layer (4) to form a surface metal layer (5), thereby completing the preparation of the photodetector.

[0007] In order to achieve the above-mentioned purpose, the present application also proposes a preparation device for a photodetector with laser-induced periodic structure enhancement, including: a substrate cleaning module, used to clean the substrate as a substrate layer; a template precursor layer preparation module, used to prepare a template precursor layer on the substrate layer; a grating template layer preparation module, used to use a pulsed laser scanning to irradiate the grating template precursor layer to generate a laser-induced surface periodic structure to form a grating template layer; a bottom metal layer preparation module, used to prepare a metal material on the grating template layer to form a bottom metal layer; a semiconductor layer preparation module, used to prepare a semiconductor material on the bottom metal layer to form a semiconductor layer; a surface metal layer preparation module, used to prepare a metal material on the semiconductor layer to form a surface metal layer, thereby completing the preparation of the photodetector.

[0008] In order to achieve the above objectives, the present application also proposes a computer-readable storage medium storing a computer program, which, when executed by a processor, can implement the method for preparing a laser-induced periodic structure enhanced photodetector as described above.

[0009] The present application proposes a laser-induced periodic structure-enhanced photodetector and a preparation method thereof. Due to the structural transfer of the grating template layer, the bottom metal layer, the semiconductor layer and the surface metal layer deposited above the grating template layer also have a nano-grating structure. The bottom metal layer, the semiconductor layer and the surface metal layer constitute a metal-semiconductor-metal structure, which not only constitutes a Fabry-Perot cavity to achieve resonant absorption enhancement, but also fully utilizes the laser-induced periodic surface grating as an enhancement structure to excite surface plasmon resonance, thereby enhancing the intensity of the interaction between light and matter. The wrinkled nano-grating structure increases the absorption area of ​​the photodetector surface for the injected light, as well as the interaction area between light and matter, effectively enhancing the absorption efficiency of the injected light, the thermal electron generation rate and the transition rate, thereby greatly improving the detection efficiency of the photodetector. In the process of preparing photodetectors, periodic surface enhanced structures are generated by a non-contact self-organization method of pulsed lasers, which can be prepared on substrates of various materials. The structure has high quality, strong robustness, high efficiency, low cost, and a simple method, making it suitable for large-scale batch production. By changing the pulsed laser parameters, the surface periodic structure and the wavelength bandwidth of the photodetector absorption spectrum can be flexibly controlled, greatly enhancing the universality of photodetectors.

[0010] Optionally, the material of the substrate layer (1) is silicon, glass or aluminum oxide, the precursor of the grating template layer (2) is amorphous silicon, the material of the bottom metal layer (3) and the surface metal layer (5) is gold or silver, and the material of the semiconductor layer (4) is titanium dioxide.

[0011] Optionally, the thickness of the precursor of the grating template layer (2) is 50nm to 300nm, the thickness of the bottom metal layer (3) is 100nm, the thickness of the semiconductor layer (4) is 100nm to 200nm, and the thickness of the surface metal layer (5) is 10nm to 30nm.

[0012] Optionally, the template precursor layer (6), the bottom metal layer (3), the semiconductor layer (4) and the surface metal layer (5) are prepared by physical vapor deposition, atomic layer deposition or electron beam evaporation.

[0013] Optionally, the pulse laser is a femtosecond pulse laser, a picosecond pulse laser, or a nanosecond pulse laser.

[0014] Optionally, when preparing a template precursor layer (6) on a substrate layer (1), silicon is plated on the substrate layer (1) using a high vacuum magnetron sputtering thin film deposition technique as the template precursor layer (6); when preparing a bottom metal layer (3) on a grating template layer (2), gold is deposited using a high vacuum magnetron sputtering thin film deposition technique to form a bottom metal layer (3); when preparing a semiconductor layer (4) on the bottom metal layer (3), titanium dioxide is deposited using a high vacuum magnetron sputtering thin film deposition technique as the semiconductor layer (4); and when preparing a surface metal layer (5) on the semiconductor layer (4), gold is deposited using a high vacuum magnetron sputtering thin film deposition technique as the surface metal layer (5).

[0015] Optionally, after the preparation of the photodetector is completed, electrodes are respectively drawn out from the bottom metal layer (3) and the surface metal layer (5), so that the injected light is irradiated to the surface metal layer (5), and the performance of the photodetector is tested. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the related technologies, the drawings required for use in the embodiments of the present application or the related technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 is a schematic structural diagram of a laser-induced periodic structure-enhanced photodetector provided in one embodiment of the present application;

[0018] Figure 2 is a flow chart of a method for preparing a laser-induced periodic structure enhanced photodetector provided in another embodiment of the present application;

[0019] Figure 3 is a schematic diagram of the formation of a photodetector during the preparation process provided in another embodiment of the present application;

[0020] Figure 4 is a schematic diagram of a reflection spectrum of a laser-induced periodic structure-enhanced photodetector provided in one embodiment of the present application;

[0021] Figure 5 is a schematic diagram of a reflection spectrum of another laser-induced periodic structure-enhanced photodetector provided in an embodiment of the present application;

[0022] Figure 6 It is a structural schematic diagram of a device for preparing a laser-induced periodic structure enhanced photodetector provided in another embodiment of the present application. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the embodiments of the present application will be described in detail below in conjunction with the accompanying drawings. In the various embodiments of the present application, many technical details are proposed in order to make the reader better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical scheme claimed in the present application can also be implemented. The division of the following embodiments is only for the convenience of description, and the specific implementation mode of the present application should not constitute any limitation. The various embodiments can be combined with each other and referenced to each other under the premise of no contradiction.

[0024] An embodiment of the present application proposes a photodetector with laser-induced periodic structure enhancement. The implementation details of the photodetector with laser-induced periodic structure enhancement proposed in this embodiment are described in detail below. The following content is only the implementation details provided for the convenience of understanding and is not necessary for the implementation of this solution.

[0025] The specific structure of a laser-induced periodic structure enhanced photodetector proposed in this embodiment is as follows: Figure 1 As shown, it includes: from bottom to top: a substrate layer 1, a grating template layer 2, a bottom metal layer 3, a semiconductor layer 4 and a surface metal layer 5.

[0026] Due to the structural transfer of the grating template layer 2, the bottom metal layer 3, the semiconductor layer 4 and the surface metal layer 5 deposited on the grating template layer 2 also have a nano-grating structure. That is, the nano-grating structure of the grating template layer 2 is transferred from bottom to top to the bottom metal layer 3, the semiconductor layer 4 and the surface metal layer 5.

[0027] The injected light is injected into the surface metal layer 5, and the surface plasmon resonance is excited due to the nano-grating structure of the surface metal layer 5, thereby enhancing the local electric field, and further improving the absorption efficiency of the injected light. At the same time, there is a wrinkled nano-grating structure between the bottom metal layer 3, the semiconductor layer 4 and the surface metal layer 5, which is used to improve the efficiency of hot electron injection, thereby improving the quantum efficiency and detection rate of the photodetector.

[0028] The bottom metal layer 3, the semiconductor layer 4 and the surface metal layer 5 constitute a metal-semiconductor-metal structure and form a Fabry-Perot cavity structure. After the injected light is injected into the Fabry-Perot cavity structure, a standing wave is formed in the cavity, thereby interacting with the material to produce an intracavity resonance enhancement effect, thereby increasing the generation rate of photogenerated carriers and further improving the quantum efficiency and detection rate of the photodetector.

[0029] In addition, by adjusting the period of the grating structure of the grating template layer 2 and the thickness of the semiconductor layer 4 (that is, adjusting the cavity length of the Fabry-Perot cavity), multi-wavelength selection of the photodetector can be achieved.

[0030] In one example, the material of the substrate layer 1 is silicon, glass (silicon dioxide) or aluminum oxide (sapphire), the precursor of the grating template layer 2 is amorphous silicon, the material of the bottom metal layer 3 and the surface metal layer 5 is gold or silver, and the material of the semiconductor layer 4 is titanium dioxide.

[0031] In one example, the thickness of the precursor of the grating template layer 2 is 50nm to 300nm, the thickness of the bottom metal layer 3 is 100nm, the thickness of the semiconductor layer 4 is 100nm to 200nm, and the thickness of the surface metal layer 5 is 10nm to 30nm.

[0032] In this embodiment, due to the structural transfer of the grating template layer, the bottom metal layer, the semiconductor layer and the surface metal layer deposited above the grating template layer also have a nano-grating structure. The bottom metal layer, the semiconductor layer and the surface metal layer constitute a metal-semiconductor-metal structure, which not only constitutes a Fabry-Perot cavity to achieve resonant absorption enhancement, but also uses the laser-induced periodic surface grating as an enhancement structure to excite surface plasmon resonance, thereby enhancing the intensity of the interaction between light and matter. The wrinkled nano-grating structure increases the absorption area of ​​the photodetector surface for the injected light and the interaction area of ​​light and matter, effectively enhancing the absorption efficiency of the injected light, the thermal electron generation rate and the transition rate, and greatly improving the detection rate of the photodetector.

[0033] Correspondingly, another embodiment of the present application proposes a method for preparing a photodetector with laser-induced periodic structure enhancement. The implementation details of the method for preparing a photodetector with laser-induced periodic structure enhancement proposed in this embodiment are described in detail below. The following content is only the implementation details provided for the convenience of understanding and is not necessary for the implementation of this solution.

[0034] The specific process of the method for preparing a laser-induced periodic structure enhanced photodetector proposed in this embodiment is as follows: Figure 2 As shown, during the preparation process, the photodetector can be formed as follows Figure 3 As shown, the preparation method comprises:

[0035] S1, cleaning a substrate as a substrate layer, and preparing a template precursor layer on the substrate layer.

[0036] In a specific implementation, the substrate is first cleaned to form the substrate layer 1 , and then silicon is plated on the substrate layer 1 using a high vacuum magnetron sputtering thin film deposition technique to form the template precursor layer 6 .

[0037] S2, using pulsed laser scanning to irradiate the grating template precursor layer to generate a laser-induced surface periodic structure to form a grating template layer.

[0038] In a specific implementation, the template precursor layer 6 is the precursor of the grating template layer 2 . To form the grating template layer 2 , it is necessary to use a pulsed laser to scan and irradiate the grating template precursor layer 6 to generate a laser-induced surface periodic structure, thereby forming the grating template layer 2 .

[0039] In one example, the pulse laser used may be a femtosecond pulse laser, a picosecond pulse laser, a nanosecond pulse laser, or the like.

[0040] S3, preparing a metal material on the grating template layer to form a bottom metal layer.

[0041] In a specific implementation, after the grating template layer 2 is prepared, it is necessary to use a high vacuum magnetron sputtering thin film deposition technology to deposit gold on the grating template layer 2 to form a bottom metal layer 3.

[0042] S4, preparing a semiconductor material on the bottom metal layer to form a semiconductor layer.

[0043] In a specific implementation, after the bottom metal layer 3 is prepared, it is necessary to use a high vacuum magnetron sputtering thin film deposition technology to deposit titanium dioxide on the bottom metal layer 3 to form a semiconductor layer 4.

[0044] S5, preparing a metal material on the semiconductor layer to form a surface metal layer, thereby completing the preparation of the photodetector.

[0045] In a specific implementation, after the semiconductor layer 4 is prepared, it is necessary to use a high vacuum magnetron sputtering thin film deposition technology to deposit gold on the semiconductor layer 4, thereby forming a surface metal layer 5 to complete the preparation of the photodetector.

[0046] In one example, the template precursor layer 6, the bottom metal layer 3, the semiconductor layer 4 and the surface metal layer 5 can be prepared by physical vapor deposition, atomic layer deposition or electron beam evaporation.

[0047] In one example, after the preparation of the photodetector is completed, it is necessary to lead out electrodes from the bottom metal layer 3 and the surface metal layer 5 respectively, so that the injected light is irradiated to the surface metal layer 5, and the performance of the photodetector is tested. If the performance test passes, the prepared photodetector can be shipped out of the factory, otherwise, it needs to be reworked or discarded.

[0048] In the present embodiment, in the process of preparing the photodetector, the periodic surface enhanced structure is generated by a non-contact self-organization method of a pulsed laser, and can be prepared on substrates of various materials, and has high structural quality, strong robustness, high efficiency, low cost, and a simple method, which is suitable for large-scale batch production. By changing the pulsed laser parameters, the surface periodic structure and the wavelength bandwidth of the photodetector absorption spectrum and other characteristics can be flexibly controlled, which greatly enhances the universality of the photodetector.

[0049] The step division of the above methods is only for clear description. When implemented, they can be combined into one step or some steps can be split and decomposed into multiple steps. As long as they include the same logical relationship, they are all within the scope of protection of this application; adding insignificant modifications to the algorithm or process or introducing insignificant designs without changing the core design of the algorithm and process are all within the scope of protection of this application.

[0050] In another embodiment, the process of preparing a photodetector is as follows: first, the substrate is cleaned as a substrate layer, and 100nm of silicon is plated on the substrate layer as a precursor layer using a high vacuum magnetron sputtering thin film deposition technology; then, a pulsed laser is used to scan and irradiate the grating template precursor layer to generate a laser-induced surface periodic structure with an amplitude of 20nm and a period of 800nm, which serves as a grating template layer; then, 100nm of gold is deposited on the grating template layer using a high vacuum magnetron sputtering thin film deposition technology to form a bottom metal layer; 170nm of titanium dioxide is deposited on the bottom metal layer using a high vacuum magnetron sputtering thin film deposition technology as a semiconductor layer; finally, 20nm of gold is deposited on the semiconductor layer using a high vacuum magnetron sputtering thin film deposition technology as a surface metal layer to complete the preparation of the photodetector.

[0051] During the test, electrodes are drawn out from the bottom metal layer and the surface metal layer respectively, so that the injected light is irradiated onto the surface of the surface metal layer. Figure 4 is a schematic diagram of the reflection spectrum of the photodetector prepared in this embodiment. Figure 4 It can be seen that the reflectivity of the photodetector prepared in this embodiment to 875nm near-infrared light is as low as about 0%, which can achieve tunable perfect absorption photodetection of the detection light wavelength.

[0052] In another embodiment, the process for preparing a photodetector is as follows: first, the substrate is cleaned as a substrate layer, and 100nm of silicon is plated on the substrate layer as a precursor layer using a high vacuum magnetron sputtering thin film deposition technique; then, a pulsed laser is used to scan and irradiate the grating template precursor layer to generate a laser-induced surface periodic structure with an amplitude of 28nm and a period of 875nm, which serves as a grating template layer; then, 100nm of gold is deposited on the grating template layer using a high vacuum magnetron sputtering thin film deposition technique to form a bottom metal layer; 185nm of titanium dioxide is deposited on the bottom metal layer using a high vacuum magnetron sputtering thin film deposition technique as a semiconductor layer; finally, 15nm of gold is deposited on the semiconductor layer using a high vacuum magnetron sputtering thin film deposition technique as a surface metal layer to complete the preparation of the photodetector.

[0053] During the test, electrodes are drawn out from the bottom metal layer and the surface metal layer respectively, so that the injected light is irradiated onto the surface of the surface metal layer. Figure 5 is a schematic diagram of the reflection spectrum of the photodetector prepared in this embodiment. Figure 5 It can be seen that the reflectivity of the photodetector prepared in this embodiment to 950nm near-infrared light is as low as about 0%, which can achieve tunable perfect absorption photodetection of the detection light wavelength.

[0054] Correspondingly, another embodiment of the present application proposes a device for preparing a photodetector with laser-induced periodic structure enhancement. The implementation details of the device for preparing a photodetector with laser-induced periodic structure enhancement proposed in this embodiment are specifically described below. The following content is only for the convenience of understanding the implementation details provided, and is not necessary for implementing this embodiment. Figure 6 This is a specific structural schematic diagram of a device for preparing a laser-induced periodic structure enhanced photodetector proposed in this embodiment, including: a substrate cleaning module 601, a template precursor layer preparation module 602, a grating template layer preparation module 603, a bottom metal layer preparation module 604, a semiconductor layer preparation module 605 and a surface metal layer preparation module 606.

[0055] The substrate cleaning module 601 is used to clean the substrate as the substrate layer.

[0056] The template precursor layer preparation module 602 is used to prepare a template precursor layer on the substrate layer.

[0057] The grating template layer preparation module 603 is used to use pulsed laser scanning to irradiate the grating template precursor layer to generate a laser-induced surface periodic structure to form a grating template layer.

[0058] The bottom metal layer preparation module 604 is used to prepare metal material on the grating template layer to form a bottom metal layer.

[0059] The semiconductor layer preparation module 605 is used to prepare semiconductor material on the bottom metal layer to form a semiconductor layer.

[0060] The surface metal layer preparation module 606 is used to prepare metal materials on the semiconductor layer to form a surface metal layer, thereby completing the preparation of the photoelectric detector.

[0061] It is worth mentioning that all modules involved in this embodiment are logic modules. In practical applications, a logic unit can be a physical unit, a part of a physical unit, or a combination of multiple physical units. In addition, in order to highlight the innovative part of this application, this embodiment does not introduce units that are not closely related to solving the technical problems proposed by this application, but this does not mean that there are no other units in this embodiment.

[0062] It is not difficult to find that this embodiment is a system embodiment corresponding to the above method embodiment, and this embodiment can be implemented in conjunction with the above method embodiment. The relevant technical details and technical effects mentioned in the above embodiments are still valid in this embodiment, and in order to reduce repetition, they are not repeated here. Accordingly, the relevant technical details mentioned in this embodiment can also be applied in the above embodiments.

[0063] Another embodiment of the present application provides a computer-readable storage medium storing a computer program. When the computer program is executed by a processor, it can implement a method for preparing a photodetector with laser-induced periodic structure enhancement as described in the above method embodiments.

[0064] That is, those skilled in the art can understand that all or part of the steps in the above-mentioned embodiment method can be completed by instructing the relevant hardware through a program, and the program is stored in a storage medium, including a number of instructions to enable a device (which can be a single-chip microcomputer, chip, etc.) or a processor to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, ROM (Read-Only Memory), RAM (Random Access Memory), disk or optical disk and other media that can store program codes.

[0065] Those skilled in the art will appreciate that the above embodiments are specific embodiments for implementing the present application, and in actual applications, various changes may be made thereto in form and detail without departing from the spirit and scope of the present application.

Claims

1. A laser-induced periodic structure enhanced photodetector, characterized in that: include: From bottom to top, a substrate layer (1), a grating template layer (2), a bottom metal layer (3), a semiconductor layer (4) and a surface metal layer (5); Due to the structural transfer of the grating template layer (2), the bottom metal layer (3), the semiconductor layer (4) and the surface metal layer (5) deposited on the grating template layer (2) also have a nano-grating structure; The injected light is injected into the surface metal layer (5), and the surface plasmon resonance is excited due to the nano-grating structure of the surface metal layer (5), thereby enhancing the local electric field, thereby improving the absorption efficiency of the injected light. At the same time, there is a wrinkled nano-grating structure between the bottom metal layer (3), the semiconductor layer (4) and the surface metal layer (5), so as to improve the efficiency of hot electron injection; The bottom metal layer (3), the semiconductor layer (4) and the surface metal layer (5) form a metal-semiconductor-metal structure and a Fabry-Perot cavity structure. After light is injected into the Fabry-Perot cavity structure, a standing wave is formed in the cavity, interacting with the material to generate an intracavity resonance enhancement effect, thereby increasing the generation rate of photogenerated carriers. By adjusting the period of the grating structure of the grating template layer (2) and the thickness of the semiconductor layer (4), multi-wavelength selection of the photodetector can be achieved.

2. The laser-induced periodic structure enhanced photodetector according to claim 1, characterized in that: The material of the substrate layer (1) is silicon, glass or aluminum oxide, the precursor of the grating template layer (2) is amorphous silicon, the material of the bottom metal layer (3) and the surface metal layer (5) is gold or silver, and the material of the semiconductor layer (4) is titanium dioxide.

3. The laser-induced periodic structure enhanced photodetector according to claim 2, characterized in that: The thickness of the precursor of the grating template layer (2) is 50nm to 300nm, the thickness of the bottom metal layer (3) is 100nm, the thickness of the semiconductor layer (4) is 100nm to 200nm, and the thickness of the surface metal layer (5) is 10nm to 30nm.

4. A method for preparing a laser-induced periodic structure enhanced photodetector, characterized in that: include: Cleaning the substrate to form a substrate layer (1), and preparing a template precursor layer (6) on the substrate layer (1); Using pulsed laser scanning to irradiate the grating template precursor layer (6) to generate a laser-induced surface periodic structure to form a grating template layer (2); Preparing a metal material on the grating template layer (2) to form a bottom metal layer (3); Preparing a semiconductor material on the bottom metal layer (3) to form a semiconductor layer (4); A metal material is prepared on the semiconductor layer (4) to form a surface metal layer (5), thereby completing the preparation of the photoelectric detector.

5. The method for preparing a laser-induced periodic structure enhanced photodetector according to claim 4, characterized in that: The template precursor layer (6), the bottom metal layer (3), the semiconductor layer (4) and the surface metal layer (5) are prepared by physical vapor deposition, atomic layer deposition or electron beam evaporation.

6. The method for preparing a laser-induced periodic structure enhanced photodetector according to claim 5, characterized in that: The pulse laser is a femtosecond pulse laser, a picosecond pulse laser, or a nanosecond pulse laser.

7. The method for preparing a laser-induced periodic structure enhanced photodetector according to claim 6, characterized in that: When preparing the template precursor layer (6) on the substrate layer (1), specifically using a high vacuum magnetron sputtering thin film deposition technology to plate silicon on the substrate layer (1) as the template precursor layer (6); When preparing the bottom metal layer (3) on the grating template layer (2), gold is deposited by high vacuum magnetron sputtering thin film deposition technology to form the bottom metal layer (3); When preparing the semiconductor layer (4) on the bottom metal layer (3), titanium dioxide is deposited as the semiconductor layer (4) by using a high vacuum magnetron sputtering thin film deposition technique; When preparing the surface metal layer (5) on the semiconductor layer (4), gold is deposited as the surface metal layer (5) by using a high vacuum magnetron sputtering thin film deposition technique.

8. The method for preparing a laser-induced periodic structure enhanced photodetector according to any one of claims 4 to 7, characterized in that: After the preparation of the photodetector is completed, electrodes are respectively drawn out from the bottom metal layer (3) and the surface metal layer (5), so that the injected light is irradiated to the surface metal layer (5), and the performance of the photodetector is tested.

9. A device for preparing a laser-induced periodic structure enhanced photodetector, characterized in that: include: A substrate cleaning module, used for cleaning a substrate as a substrate layer; A template precursor layer preparation module, used for preparing a template precursor layer on a substrate layer; A grating template layer preparation module is used to irradiate the grating template precursor layer by using pulsed laser scanning to generate a laser-induced surface periodic structure to form a grating template layer; A bottom metal layer preparation module is used to prepare metal material on the grating template layer to form a bottom metal layer; A semiconductor layer preparation module is used to prepare semiconductor materials on the bottom metal layer to form a semiconductor layer; The surface metal layer preparation module is used to prepare metal materials on the semiconductor layer to form a surface metal layer and complete the preparation of the photoelectric detector.

10. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, it can implement the method for preparing a laser-induced periodic structure enhanced photodetector as claimed in any one of claims 4 to 8.

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