Preparation method of perovskite solar cell based on nicotinamide derivative material passivation

Abstract

A preparation method of a perovskite solar cell based on nicotinamide derivative material passivation relates to the technical field of solar cells, and the cell is of a P-I-N structure and sequentially comprises a transparent conductive substrate, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer, a buffer layer and a metal electrode from bottom to top. The invention provides a nicotinamide derivative material for the interface modification layer, the nicotinamide derivative material comprises 2-amino nicotinamide and 6-amino nicotinamide, and an isopropanol solution containing 2-amino nicotinamide and 6-amino nicotinamide is used for carrying out synergistic passivation treatment on the perovskite light absorption layer to prepare the interface modification layer. The defects on the surface of the perovskite thin film are reduced, the quality of the perovskite thin film is improved, carrier transport is promoted, and non-radiative recombination is effectively inhibited, so that the photoelectric conversion efficiency of the perovskite solar cell is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a method for preparing a perovskite solar cell passivated by a nicotinamide derivative material, including a method for preparing a wide bandgap perovskite solar cell passivated by 2-aminonicotinamide and 6-aminonicotinamide. Background Art

[0002] Hybrid organic-inorganic lead halide perovskites have made significant progress in the field of photovoltaic (PV) technology because of their excellent optoelectronic properties, including high absorption coefficient, long carrier lifetime and diffusion length. Wide-bandgap perovskite materials can be used as top cells in tandem cells to improve the utilization of the solar spectrum and further improve the photoelectric conversion efficiency. As the top cell in a tandem cell, its optimal bandgap range is 1.65-1.75 eV. However, due to the characteristics of perovskite materials, a large number of defects will inevitably form at the grain boundaries and surfaces during the film formation of multi-component perovskites. These defects may accelerate non-radiative recombination under high-voltage losses and are also the main reason for the reduction of the photoelectric conversion efficiency (PCE) of perovskite solar cells (PSCs). According to literature reports, the trap density on the surface of perovskite films is 1-2 orders of magnitude larger than that of the inner film. Because there are many deep-level traps (ion defects) at the interface, interface passivation is the most effective way to reduce non-radiative recombination losses.

[0003] In order to overcome the above problems, a large number of interface passivation strategies have been reported. 2+ Positive defects and halide negative defects are used to suppress non-radiative recombination losses, thereby further improving the PCE and stability of PSCs. For example, metal halides (such as KC1, NaF, RbF), organic small molecules (such as theophylline, 2-aminoterephthalic acid), and organic ammonium salts (such as phenylethylamine ammonium iodide (PEAI), 1-naphthylamine ammonium iodide (NMAI)). Although many double passivation molecules have been developed to reduce perovskite surface defects, most studies study molecules from the perspective of functional groups and study the passivation effect by changing the type of groups. However, there are limited studies on improving the passivation effect of double passivation molecules by changing the position of functional groups. In addition, only a single molecule is used for passivation, and the defects on the perovskite film have adsorption limits, resulting in insufficient coordination of defect sites.

[0004] In summary, the problems of passivation materials for organic-inorganic hybrid wide-bandgap perovskite solar cells can be summarized as follows: 1) For single-molecule passivation perovskite thin film, there is an adsorption limit for the suppressed defects, resulting in insufficient coordination of defect sites. 2) For dual-passivation molecular materials, most studies study the molecules from the perspective of functional groups and study the passivation effect by changing the type of groups. Studies on the passivation effect from the position of the groups are limited. Summary of the invention

[0005] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art and provide a method for preparing a perovskite solar cell based on passivation of a nicotinamide derivative material. The nicotinamide derivative material suitable for the interface modification layer includes 2-aminonicotinamide and 6-aminonicotinamide, and the perovskite light absorption layer is passivated using an isopropanol solution containing 2-aminonicotinamide and 6-aminonicotinamide, thereby reducing the defects on the surface of the perovskite film, improving the quality of the perovskite film, promoting carrier transport, and effectively inhibiting non-radiative recombination, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

[0006] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0007] A method for preparing a nicotinamide derivative material passivated perovskite solar cell, wherein the cell is a PIN structure, and comprises, from bottom to top, a transparent conductive substrate, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer, a buffer layer and a metal electrode; the band gap of the perovskite solar cell is 1.6 to 1.72 eV;

[0008] The perovskite light absorbing layer satisfies the following conditions simultaneously:

[0009] The perovskite light absorption layer is an organic-inorganic hybrid multi-halogen mixed perovskite;

[0010] The thickness of the perovskite light absorption layer is 500nm-1μm;

[0011] The interface modification layer material is 2-aminonicotinamide and 6-aminonicotinamide, and its chemical formula is shown in Formula 1 and Formula 2:

[0012]

[0013] The interface modification layer is obtained by passivating the perovskite absorption layer with a passivation solution containing 2-aminonicotinamide and 6-aminonicotinamide by scraping or spin coating.

[0014] In some embodiments, the transparent conductive substrate is selected from one of FTO conductive glass and ITO conductive glass.

[0015] In some embodiments, the material of the hole transport layer is selected from self-assembled monolayer, P3CT-N, NiO x One or more organic or inorganic hole transport materials;

[0016] The self-assembled monolayer comprises one or more of (2-(9H-carbazole-9-yl)ethyl)phosphonic acid, (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid, (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid, and (2-(7H-dibenzocarbazole-7-yl)ethyl)phosphonic acid self-assembled monolayer.

[0017] In some embodiments, the material of the electron transport layer is selected from PCBM, C 60 One of them.

[0018] In some embodiments, the material of the buffer layer is selected from one of BCP and SnO2.

[0019] In some embodiments, the metal electrode satisfies the following conditions simultaneously:

[0020] The metal electrode is a metal electrode prepared by a thermal evaporation process;

[0021] The thickness of the metal electrode is 50-120 nm.

[0022] In some embodiments, the metal electrode is preferably Ag, Cu, or Au.

[0023] In some embodiments, the method for preparing the interface modification layer comprises:

[0024] The perovskite light absorption layer is passivated by using a solution spin coating method with a solution containing 2-aminonicotinamide / 6-aminonicotinamide / 2-aminonicotinamide+6-aminonicotinamide isopropanol to obtain a passivated perovskite film;

[0025] The spin-coated perovskite film is subjected to a static treatment to obtain an interface modification layer.

[0026] In some embodiments, during the spin coating operation, the spin coating speed is 3000 r / min-8000 r / min, and the spin coating time is 20 s-90 s.

[0027] In some embodiments, the standing time of the standing treatment is 5 min-60 min.

[0028] Furthermore, the present invention provides an application of the interface modification layer prepared by the above method, which is suitable for perovskite-based tandem solar cells and at least includes the following structural devices:

[0029] 1) Inorganic perovskite / perovskite tandem solar cells;

[0030] 2) Inorganic perovskite / crystalline silicon tandem solar cells;

[0031] 3) Inorganic perovskite / copper indium gallium selenide tandem solar cells.

[0032] Advantages and positive effects of the present invention:

[0033] 1. The present invention proposes a method for preparing a perovskite solar cell based on passivation of a nicotinamide derivative material, which passivates the surface of the perovskite light absorption layer by mixing an isopropanol solution of 2-aminonicotinamide and 6-aminonicotinamide, effectively reducing the defects on the surface and grain boundaries of the wide-bandgap perovskite film, thereby improving the quality of the perovskite film.

[0034] 2. The present invention uses two isomers of bimolecular passivation materials, 2-aminonicotinamide and 6-aminonicotinamide, to passivate the perovskite light absorption layer, using the carbonyl group of the nicotinamide structure to react with the uncoordinated Pb in the perovskite. 2+ The ions form strong coordination, which effectively reduces the surface defects of perovskite, thereby promoting carrier transport, inhibiting non-radiative recombination, and improving the open circuit voltage and light conversion efficiency of perovskite solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 Schematic diagram of the structure of the perovskite solar cell described in Example 1; in the figure: 1 is a transparent conductive substrate, 2 is a hole transport layer, 3 is a perovskite light absorption layer, 4 is an interface modification layer, 5 is an electron transport layer, 6 is a buffer layer, and 7 is a metal electrode;

[0036] Figure 2 is the JV curve of the perovskite solar cell described in Example 1;

[0037] Figure 3 is the JV curve of the perovskite solar cell described in Example 2;

[0038] Figure 4 is the JV curve of the perovskite solar cell described in Example 3;

[0039] Figure 5 The JV curve of the perovskite solar cell described in Comparative Example 1;

[0040] Figure 6 XRD diagrams of the perovskite light absorption layer corresponding to Examples 1-3 and Comparative Example 1; DETAILED DESCRIPTION

[0041] The technical scheme of the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The following examples are provided in order to further understand the present invention better, are not limited to the best mode of implementation, and do not limit the content and protection scope of the present invention. If no specific experimental steps or conditions are indicated in the examples, the operation or conditions of the conventional experimental steps described in the documents in this area can be carried out. If the manufacturer is not indicated in the reagents or instruments used, they are all conventional reagent products that can be obtained commercially.

[0042] The perovskite solar cell based on nicotinamide derivative material passivation provided by the present invention has the following structure, which includes, from bottom to top, a transparent conductive substrate 1, a hole transport layer 2, a perovskite light absorption layer 3, an interface modification layer 4, an electron transport layer 5, a buffer layer 6 and a metal electrode 7. The thickness of the perovskite light absorption layer 3 is 500nm-1μm, and the following conditions are met at the same time: the perovskite light absorption layer 3 is an organic-inorganic hybrid multi-halogen mixed perovskite.

[0043] The interface modification layer 4 is obtained by passivating the perovskite absorption layer 3 by a passivation solution containing 2-aminonicotinamide and 6-aminonicotinamide by scraping or spin coating. The chemical formulas of 2-aminonicotinamide and 6-aminonicotinamide are shown in Formula 1 and Formula 2:

[0044]

[0045]

[0046] Example 1

[0047] The band gap of a PIN-type perovskite solar cell provided in this embodiment is about 1.68 eV, and the structure is as follows Figure 1 As shown, from bottom to top, it includes: a transparent conductive substrate, ph-2PACz (HTL), a perovskite light absorption layer, an interface modification layer, a PCBM (ETL), a BCP (buffer layer), and a silver electrode.

[0048] The preparation method comprises the following steps:

[0049] Step 1: Pretreatment of transparent conductive substrate: ultrasonically clean the ITO conductive glass with detergent, deionized water, acetone and isopropanol in sequence, blow dry with nitrogen, and treat with ultraviolet ozone for 15-20 minutes.

[0050] Step 2, preparing a hole transport layer: (1) spin coating a ph-2PACz solution on the ITO surface as a hole transport layer; (2) annealing at 100°C for 10 min.

[0051] Step 3, preparation of perovskite light absorption layer: (1) preparation of 1.5M MA y Csx FA 1-x-y Pb(I z Br 1-z )3 perovskite precursor solution; (2) preparing a perovskite wet film by a one-step doctor blade coating method using the perovskite precursor solution obtained in step (1); (4) annealing the obtained wet film for 30 minutes and cooling it to room temperature to obtain a perovskite light absorbing layer.

[0052] Step 4, preparing an interface modification layer: spin coating a 2-aminonicotinamide isopropanol solution on the surface of the perovskite as an interface modification layer, and spin coating a 2-aminonicotinamide isopropanol solution on the perovskite light absorption layer by spin coating, and let it stand for 10 minutes.

[0053] Step 5, preparing the electron transport layer: spin coating PCBM (PCBM / CB=20 mg / mL) on the surface of the interface modification layer as the electron transport layer at a spin coating speed of 2000 r / min.

[0054] Step 6, preparing a buffer layer: spin-coating BCP (BCP / IPA=0.5 mg / mL) as a buffer layer on the surface of the electron transport layer at a spin-coating speed of 5000 r / min.

[0055] Step 7, preparing a metal electrode: preparing a metal silver electrode on the surface of the buffer layer with a thickness of 80 nm.

[0056] Step 8, photovoltaic performance test: The effective area of ​​the perovskite solar cell device prepared by the above method is 0.0755cm 2 , at 100mW / cm 2 The measurement was performed under light intensity (AM 1.5G), the scanning interval was from 1.3V to 0V, and the scanning step was 0.02V.

[0057] The JV characteristic curve of the obtained perovskite solar cell is as follows Figure 2 As shown by Figure 2 It can be seen that the open circuit voltage of the perovskite solar cell is 1.17V, the fill factor is 77.43%, and the short circuit current density is 20.97mA / cm 2 , the photoelectric conversion efficiency is 19.10%.

[0058] Example 2

[0059] The band gap of a PIN-type perovskite solar cell provided in this embodiment is about 1.68 eV, and the structure is as follows Figure 1 As shown, from bottom to top, it includes: a transparent conductive substrate, ph-2PACz (HTL), a perovskite light absorption layer, an interface modification layer, a PCBM (ETL), a BCP (buffer layer), and a silver electrode.

[0060] The preparation method comprises the following steps:

[0061] Step 1: Pretreatment of transparent conductive substrate: ultrasonically clean the ITO conductive glass with detergent, deionized water, acetone and isopropanol in sequence, blow dry with nitrogen, and treat with ultraviolet ozone for 15-20 minutes.

[0062] Step 2, preparing a hole transport layer: (1) spin coating a ph-2PACz solution on the ITO surface as a hole transport layer; (2) annealing at 100°C for 10 min.

[0063] Step 3, preparation of perovskite light absorption layer: (1) preparation of 1.5M MA y Cs x FA 1-x-y Pb(I z Br 1-z )3 perovskite precursor solution; (2) preparing a perovskite wet film by a one-step doctor blade coating method using the perovskite precursor solution obtained in step (1); (4) annealing the obtained wet film for 30 minutes and cooling it to room temperature to obtain a perovskite light absorbing layer.

[0064] Step 4, preparing an interface modification layer: spin coating a 6-aminonicotinamide isopropanol solution on the surface of the perovskite as an interface modification layer, and spin coating a 6-aminonicotinamide isopropanol solution on the perovskite light absorption layer by spin coating, and let it stand for 10 minutes.

[0065] Step 5, preparing the electron transport layer: spin coating PCBM (PCBM / CB=20 mg / mL) on the surface of the interface modification layer as the electron transport layer at a spin coating speed of 2000 r / min.

[0066] Step 6, preparing a buffer layer: spin-coating BCP (BCP / IPA=0.5 mg / mL) as a buffer layer on the surface of the electron transport layer at a spin-coating speed of 5000 r / min.

[0067] Step 7, preparing a metal electrode: preparing a metal silver electrode on the surface of the buffer layer with a thickness of 80 nm.

[0068] Step 8, photovoltaic performance test: The effective area of ​​the perovskite solar cell device prepared by the above method is 0.0755cm 2 , at 100mW / cm 2 The measurement was performed under light intensity (AM 1.5G), the scanning interval was from 1.3V to 0V, and the scanning step was 0.02V.

[0069] The JV characteristic curve of the obtained perovskite solar cell is as follows Figure 3 As shown by Figure 3 It can be seen that the open circuit voltage of the perovskite solar cell is 1.18V, the fill factor is 82.59%, and the short circuit current density is 20.28mA / cm2 , the photoelectric conversion efficiency is 19.90%.

[0070] Example 3

[0071] The band gap of a PIN-type perovskite solar cell provided in this embodiment is about 1.68 eV, and the structure is as follows Figure 1 As shown, from bottom to top, it includes: a transparent conductive substrate, ph-2PACz (HTL), a perovskite light absorption layer, an interface modification layer, a PCBM (ETL), a BCP (buffer layer), and a silver electrode.

[0072] The preparation method comprises the following steps:

[0073] Step 1: Pretreatment of transparent conductive substrate: ultrasonically clean the ITO conductive glass with detergent, deionized water, acetone and isopropanol in sequence, blow dry with nitrogen, and treat with ultraviolet ozone for 15-20 minutes.

[0074] Step 2, preparing a hole transport layer: (1) spin coating a ph-2PACz solution on the ITO surface as a hole transport layer; (2) annealing at 100°C for 10 min.

[0075] Step 3, preparation of perovskite light absorption layer: (1) preparation of 1.5M MA y Cs x FA 1-x-y Pb(I z Br 1-z )3 perovskite precursor solution; (2) preparing a perovskite wet film by a one-step doctor blade coating method using the perovskite precursor solution obtained in step (1); (4) annealing the obtained wet film for 30 minutes and cooling it to room temperature to obtain a perovskite light absorbing layer.

[0076] Step 4, prepare an interface modification layer: spin-coat a 2-aminonicotinamide 6-aminonicotinamide mixed isopropanol solution on the surface of the perovskite as an interface modification layer, and spin-coat a 2-aminonicotinamide 6-aminonicotinamide mixed isopropanol solution on the perovskite light absorption layer by spin coating, and let stand for 10 minutes.

[0077] Step 5, preparing the electron transport layer: spin coating PCBM (PCBM / CB=20 mg / mL) on the surface of the interface modification layer as the electron transport layer at a spin coating speed of 2000 r / min.

[0078] Step 6, preparing a buffer layer: spin-coating BCP (BCP / IPA=0.5 mg / mL) as a buffer layer on the surface of the electron transport layer at a spin-coating speed of 5000 r / min.

[0079] Step 7, preparing a metal electrode: preparing a metal silver electrode on the surface of the buffer layer with a thickness of 80 nm.

[0080] Step 8, photovoltaic performance test: The effective area of ​​the perovskite solar cell device prepared by the above method is 0.0755cm 2 , at 100mW / cm 2 The measurement was performed under light intensity (AM 1.5G), the scanning interval was from 1.3V to 0V, and the scanning step was 0.02V.

[0081] The JV characteristic curve of the obtained perovskite solar cell is as follows Figure 4 As shown by Figure 4 It can be seen that the open circuit voltage of the perovskite solar cell is 1.20V, the fill factor is 81.09%, and the short circuit current density is 20.85mA / cm 2 , the photoelectric conversion efficiency is 20.36%.

[0082] Comparative Example 1

[0083] The band gap of a PIN-type perovskite solar cell provided in this comparative example is about 1.68 eV, and the structure is as follows Figure 1 As shown, from bottom to top, it includes: a transparent conductive substrate, ph-2PACz (HTL), a perovskite light absorption layer, an interface modification layer, a PCBM (ETL), a BCP (buffer layer), and a silver electrode.

[0084] The preparation method comprises the following steps:

[0085] Step 1: Pretreatment of transparent conductive substrate: ultrasonically clean the ITO conductive glass with detergent, deionized water, acetone and isopropanol in sequence, blow dry with nitrogen, and treat with ultraviolet ozone for 15-20 minutes.

[0086] Step 2, preparing a hole transport layer: (1) spin coating a ph-2PACz solution on the ITO surface as a hole transport layer; (2) annealing at 100°C for 10 min.

[0087] Step 3, preparation of perovskite light absorption layer: (1) preparation of 1.5M MA y Cs x FA 1-x-y Pb(I z Br 1-z )3 perovskite precursor solution; (2) preparing a perovskite wet film by a one-step doctor blade coating method using the perovskite precursor solution obtained in step (1); (4) annealing the obtained wet film for 30 minutes and cooling it to room temperature to obtain a perovskite light absorbing layer.

[0088] Step 5, preparing the electron transport layer: spin coating PCBM (PCBM / CB=20 mg / mL) on the surface of the interface modification layer as the electron transport layer at a spin coating speed of 2000 r / min.

[0089] Step 6, preparing a buffer layer: spin-coating BCP (BCP / IPA=0.5 mg / mL) as a buffer layer on the surface of the electron transport layer at a spin-coating speed of 5000 r / min.

[0090] Step 7, preparing a metal electrode: preparing a metal silver electrode on the surface of the buffer layer with a thickness of 80 nm.

[0091] Step 8, photovoltaic performance test: The effective area of ​​the perovskite solar cell device prepared by the above method is 0.0755cm 2 , at 100mW / cm 2 The measurement was performed under light intensity (AM 1.5G), the scanning interval was from 1.3V to 0V, and the scanning step was 0.02V.

[0092] The JV characteristic curve of the obtained perovskite solar cell is as follows Figure 5 As shown by Figure 5 It can be seen that the open circuit voltage of the perovskite solar cell is 1.17V, the fill factor is 72.50%, and the short circuit current density is 20.74mA / cm 2 , the photoelectric conversion efficiency is 17.61%.

[0093] The XRD patterns of the perovskite films obtained in Examples 1-3 and Comparative Example 1 are as follows: Figure 6 As shown, the use of interface modification layer passivation significantly improves the crystallization quality of perovskite films.

[0094] In summary, the present invention uses two isomers of bimolecular passivation materials, 2-aminonicotinamide and 6-aminonicotinamide, to synergistically passivate the perovskite light absorption layer, and utilizes the carbonyl group of the nicotinamide structure to react with the uncoordinated Pb in the perovskite. 2+ The ions form strong coordination, thereby more effectively reducing the surface defects of perovskite. It promotes carrier transport, inhibits non-radiative recombination, and improves the open circuit voltage and light conversion efficiency of perovskite solar cells. This method is simple to operate, easy to implement, has a high repetition rate, and has good application prospects.

[0095] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A perovskite solar cell passivated by nicotinamide derivative materials, characterized in that: The cell is a PIN structure, and comprises, from bottom to top, a transparent conductive substrate (1), a hole transport layer (2), a perovskite light absorption layer (3), an interface modification layer (4), an electron transport layer (5), a buffer layer (6) and a metal electrode (7); the band gap of the perovskite solar cell is 1.6 to 1.72 eV; The perovskite light absorbing layer (3) satisfies the following conditions at the same time: The perovskite light absorption layer (3) is an organic-inorganic hybrid multi-halogen mixed perovskite; The thickness of the perovskite light absorbing layer (3) is 500nm-1μm; The interface modification layer (4) is obtained by passivating the perovskite absorption layer (3) with a passivation solution containing 2-aminonicotinamide and 6-aminonicotinamide by means of scraping or spin coating.

2. The perovskite solar cell according to claim 1, characterized in that: The transparent conductive substrate (1) is selected from one of FTO conductive glass and ITO conductive glass.

3. The perovskite solar cell according to claim 1, characterized in that: The material of the hole transport layer (2) is selected from self-assembled monolayer, P3CT-N, NiO x One or more organic or inorganic hole transport materials; The self-assembled monolayer comprises one or more of (2-(9H-carbazole-9-yl)ethyl)phosphonic acid, (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid, (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid, and (2-(7H-dibenzocarbazole-7-yl)ethyl)phosphonic acid self-assembled monolayer.

4. The perovskite solar cell according to claim 1, characterized in that: The material of the electron transport layer (5) is selected from [6,6]phenyl C61-butyric acid methyl ester PC 61 BM, Fullerene C 60 One of them.

5. The perovskite solar cell according to claim 1, characterized in that: The material of the buffer layer (6) is selected from one of bathocuproin (BCP) and SnO2.

6. The perovskite solar cell according to claim 1, characterized in that: The metal electrode (7) satisfies the following conditions simultaneously: The metal electrode (7) is a metal electrode prepared by a thermal evaporation process; The thickness of the metal electrode (7) is 50-120 nm.

7. The method for preparing a perovskite solar cell according to any one of claims 1 to 6, characterized in that: The perovskite structure is a PIN type structure, which comprises, from bottom to top, a transparent conductive substrate (1), a hole transport layer (2), a perovskite light absorption layer (3), an interface modification layer (4), an electron transport layer (5), a buffer layer (6) and a metal electrode (7), wherein the perovskite light absorption layer (3) is an organic-inorganic hybrid multi-halogen mixed perovskite; The preparation method of the interface modification layer (4) comprises: The perovskite light absorption layer (3) is passivated by using a solution spin coating method, using a solution containing 2-aminonicotinamide / 6-aminonicotinamide / 2-aminonicotinamide+6-aminonicotinamide isopropanol to obtain a passivated perovskite film; The spin-coated perovskite film is subjected to a static treatment to prepare an interface modification layer (4).

8. The method for preparing a perovskite solar cell according to claim 7, characterized in that: In the spin coating operation, the spin coating speed is 3000r / min-8000r / min, and the spin coating time is 20s-90s.

9. The method for preparing a perovskite solar cell according to claim 7, characterized in that: The standing treatment has a standing time of 5 min to 60 min.

10. Application of the interface modification layer prepared by the method according to any one of claims 7 to 9, characterized in that: Applicable to perovskite-based tandem solar cells, including at least the following structural devices: 1) Inorganic perovskite / perovskite tandem solar cells; 2) Inorganic perovskite / crystalline silicon tandem solar cells; 3) Inorganic perovskite / copper indium gallium selenide tandem solar cells.

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