Intelligent power module

By adding an auxiliary circuit for IGBT to open the IGBT in the intelligent power module to control the conduction and closing of the IGBT, the switching loss problem caused by the IGBT during the high-speed turn-off process is solved, and the effect of reducing losses and improving reliability is achieved.

CN119401792AInactive Publication Date: 2025-02-07FOSHAN VANADIUM SOUND TECH CO LTD +2
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Patent Information

Application Number
CN202411978152.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-31
Publication Date
2025-02-07
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

In the existing intelligent power modules, the IGBT will inevitably cause switching losses during high-speed on-off. Although there is a push-pull circuit that increases the gate driving capability, the on-delay cannot be reduced, resulting in a large turn-on loss.

Method used

An intelligent power module was designed to add an auxiliary circuit for IGBT to open. Through the combination of rectifier bridge circuit, auxiliary circuit, inverter circuit, PFC circuit and driver IC circuit, the conduction and closing of the IGBT is controlled, reducing the opening delay time and loss.

Benefits of technology

By adding auxiliary circuits, the loss of the IGBT during the opening process is effectively reduced, the overall loss problem of the IGBT is reduced, and the reliability of the system is improved.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention relates to the technical field of intelligent power modules, and provides an intelligent power module which comprises a rectifier bridge circuit, an auxiliary circuit, an inverter circuit, a PFC circuit and a driving IC circuit. The rectifier bridge circuit is used for connecting an alternating current power supply, converting the alternating current power supply into a direct current power supply and supplying the direct current power supply to the inverter circuit to realize frequency conversion; the input end of the auxiliary circuit is used for being connected with a first power supply voltage, and the output end of the auxiliary circuit is connected with the input end of the inverter circuit and used for controlling on and off of the inverter circuit; the output end of the inverter circuit is connected with the driving IC circuit, the input end of the PFC circuit is connected with the input end of the inverter circuit, and the output end of the PFC circuit is connected to the driving IC circuit. According to the intelligent power module, the auxiliary circuit for opening the IGBT is additionally arranged, so that the problem of loss generated in the opening process of the IGBT is well solved, the overall loss problem of the IGBT is reduced, and the reliability is high.
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Description

Technical Field

[0001] The present invention relates to the technical field of intelligent power modules, and in particular to an intelligent power module. Background Art

[0002] Intelligent Power Module (IPM) is a power drive product that combines power electronics and integrated circuit technology. It has the advantages of high current, low saturation voltage and high withstand voltage of GTR (high power transistor), and the advantages of high input impedance, high switching frequency and low driving power of MOSFET (field effect transistor). In addition, IPM integrates logic, control, detection and protection circuits, which is easy to use. It not only reduces the size of the system and shortens the development time, but also enhances the reliability of the system, adapting to the development direction of today's power devices.

[0003] With the development of power electronics technology, IGBT intelligent power modules (IPM) are being used more and more widely. In high-power applications, IGBTs increase gate drive capabilities by push-pull power during high-speed turn-on and turn-off.

[0004] However, in existing applications, the switching loss of IGBT is inevitable. Although there is a push-pull circuit to increase the gate drive, the turn-on delay cannot be reduced, which will cause turn-on loss to the IGBT. The IGBT can only be turned on after the voltage applied to the gate reaches the threshold voltage. This process has a turn-on delay, resulting in relatively large turn-on loss. Summary of the invention

[0005] The present invention provides an intelligent power module, aiming to solve the problem of relatively large turn-on loss caused by IGBT turn-on delay in the existing intelligent power module.

[0006] An embodiment of the present invention provides an intelligent power module, comprising: a rectifier bridge circuit, an auxiliary circuit, an inverter circuit, a PFC circuit and a driver IC circuit; the rectifier bridge circuit is used to connect an AC power supply, and convert the AC power supply into a DC power supply and supply the DC power supply to the inverter circuit to achieve frequency conversion; the input end of the auxiliary circuit is used to connect a first power supply voltage, the output end of the auxiliary circuit is connected to the input end of the inverter circuit, and is used to control the on and off of the inverter circuit; the output end of the inverter circuit is connected to the driver IC circuit, the input end of the PFC circuit is connected to the input end of the inverter circuit, and the output end of the PFC circuit is connected to the driver IC circuit.

[0007] Preferably, the auxiliary circuit includes a first MOS tube, a second MOS tube and a third MOS tube, the source of the first MOS tube is respectively connected to the source of the second MOS tube and the source of the third MOS tube and connected to the first power supply voltage, the gate of the first MOS tube is respectively connected to the gate of the second MOS tube and the gate of the third MOS tube, the gate of the first MOS tube is also used to receive an external control signal, and the external control signal is output through the drain of the first MOS tube to control the on and off of the inverter circuit.

[0008] Preferably, the inverter circuit comprises: a first IGBT tube, a second IGBT tube, a third IGBT tube, a fourth IGBT tube, a fifth IGBT tube and a sixth IGBT tube; The drain of the first IGBT tube is connected to the drain of the third IGBT tube and the drain of the fifth IGBT tube respectively, the gate of the first IGBT tube is connected to the drain of the first MOS tube, the gate of the third IGBT tube is connected to the drain of the second MOS tube, and the gate of the fifth IGBT tube is connected to the drain of the third MOS tube; The source of the first IGBT tube is connected to the drain of the second IGBT tube, the source of the third IGBT tube is connected to the drain of the fourth IGBT tube, the source of the fifth IGBT tube is connected to the drain of the sixth IGBT tube; the source of the second IGBT tube is connected to the source of the fourth IGBT tube and the source of the sixth IGBT tube respectively; The gate of the second IGBT tube, the gate of the fourth IGBT tube and the gate of the sixth IGBT tube are respectively connected to the driving IC circuit.

[0009] Preferably, the PFC circuit includes: a seventh IGBT tube, a first resistor and a first diode, the gate of the seventh IGBT tube is connected to the driving IC circuit through the first resistor, the source of the seventh IGBT tube is connected to the second power supply voltage, the drain of the seventh IGBT tube is connected to the anode of the first diode, and the cathode of the first diode is connected to the drain of the first IGBT tube.

[0010] Compared with the prior art, the beneficial effect of the present invention is that the rectifier bridge circuit is used to connect the AC power supply, and the AC power supply is converted into a DC power supply and supplied to the inverter circuit to achieve frequency conversion; the input end of the auxiliary circuit is used to connect the first power supply voltage, and the output end of the auxiliary circuit is connected to the input end of the inverter circuit, which is used to control the conduction and shutdown of the inverter circuit; the output end of the inverter circuit is connected to the driver IC circuit, the input end of the PFC circuit is connected to the input end of the inverter circuit, and the output end of the PFC circuit is connected to the driver IC circuit. In this way, by adding an auxiliary circuit for turning on the IGBT, the loss problem generated by the IGBT during the turning-on process is greatly improved, the overall loss problem of the IGBT is reduced, and the reliability is high. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The present invention will be described in detail below in conjunction with the accompanying drawings. The above and other aspects of the present invention will become clearer and easier to understand through the detailed description made in conjunction with the following drawings. In the accompanying drawings: Figure 1 is a schematic diagram of the structure of an intelligent power module provided by an embodiment of the present invention; Figure 2 is a control logic diagram of an intelligent power module provided by an embodiment of the present invention; Figure 3 This is a partial enlargement of Figure 1. Figure 1 ; Figure 4 This is a partial enlargement of Figure 1. Figure 2 ; Figure 5 This is a partial enlargement of Figure 1. Figure 3 .

[0012] Among them, 1. rectifier bridge circuit, 2. auxiliary circuit, 21. first MOS tube, 22. second MOS tube, 23. third MOS tube, 3. inverter circuit, 4. PFC circuit, 5. driver IC circuit, DETAILED DESCRIPTION

[0013] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0014] Combined with Figure 1-Figure 5As shown, an embodiment of the present invention provides an intelligent power module, including: a rectifier bridge circuit 1, an auxiliary circuit 2, an inverter circuit 3, a PFC circuit 4 and a driver IC circuit 5; the rectifier bridge circuit 1 is used to connect an AC power supply, and convert the AC power supply into a DC power supply and supply it to the inverter circuit 3 to achieve frequency conversion; the input end of the auxiliary circuit 2 is used to connect a first power supply voltage (+20V), and the output end of the auxiliary circuit 2 is connected to the input end of the inverter circuit 3, and is used to control the on and off of the inverter circuit 3; the output end of the inverter circuit 3 is connected to the driver IC circuit 5, the input end of the PFC circuit 4 is connected to the input end of the inverter circuit 3, and the output end of the PFC circuit 4 is connected to the driver IC circuit 5.

[0015] Specifically, the rectifier bridge circuit 1 is used to connect the AC power supply, the input end of the auxiliary circuit 2 is used for supply voltage, the output end of the auxiliary circuit 2 is connected to the input end of the inverter circuit 3, and is used to control the on and off of the inverter circuit 3; the output end of the inverter circuit 3 is connected to the driver IC circuit 5, the input end of the PFC circuit 4 is connected to the input end of the inverter circuit 3, and the output end of the PFC circuit 4 is connected to the driver IC circuit 5. In this way, by adding the auxiliary circuit 2 for turning on the IGBT, the loss problem generated by the IGBT during the turning-on process is greatly improved, the overall loss problem of the IGBT is reduced, and the reliability is high.

[0016] The boost circuit and the drive IC circuit 5 are controlled by the MCU, and the drive IC circuit 5 and the inverter circuit 3 are mutually controlled.

[0017] In this embodiment, the auxiliary circuit 2 includes a first MOS transistor 21, a second MOS transistor 22 and a third MOS transistor 23. The source of the first MOS transistor 21 is respectively connected to the source of the second MOS transistor 22 and the source of the third MOS transistor 23 and connected to the first power supply voltage. The gate of the first MOS transistor 21 is respectively connected to the gate of the second MOS transistor 22 and the gate of the third MOS transistor 23. The gate of the first MOS transistor 21 is also used to receive an external control signal, and the external control signal is output through the drain of the first MOS transistor 21 to control the on and off of the inverter circuit 3.

[0018] In this embodiment, the inverter circuit 3 includes: a first IGBT tube Q1, a second IGBT tube Q2, a third IGBT tube Q3, a fourth IGBT tube Q4, a fifth IGBT tube Q5 and a sixth IGBT tube Q6; The drain of the first IGBT tube Q1 is connected to the drain of the third IGBT tube Q3 and the drain of the fifth IGBT tube Q5 respectively, the gate of the first IGBT tube Q1 is connected to the drain of the first MOS tube 21, the gate of the third IGBT tube Q3 is connected to the drain of the second MOS tube 22, and the gate of the fifth IGBT tube Q5 is connected to the drain of the third MOS tube 23; The source of the first IGBT tube Q1 is connected to the drain of the second IGBT tube Q2, the source of the third IGBT tube Q3 is connected to the drain of the fourth IGBT tube Q4, the source of the fifth IGBT tube Q5 is connected to the drain of the sixth IGBT tube Q6; the source of the second IGBT tube Q2 is connected to the source of the fourth IGBT tube Q4 and the source of the sixth IGBT tube Q6 respectively; The gate of the second IGBT tube Q2 , the gate of the fourth IGBT tube Q4 , and the gate of the sixth IGBT tube Q6 are connected to the driving IC circuit 5 , respectively.

[0019] In this embodiment, the PFC circuit 4 includes: a seventh IGBT tube Q7, a first resistor R1 and a first diode D1, the gate of the seventh IGBT tube Q7 is connected to the drive IC circuit 5 through the first resistor R1, the source of the seventh IGBT tube Q7 is connected to the second power supply voltage (-VCC), the drain of the seventh IGBT tube Q7 is connected to the anode of the first diode D1, and the cathode of the first diode D1 is connected to the drain of the first IGBT tube Q1.

[0020] In this embodiment, an auxiliary circuit is added to the gate side of the IGBT, which makes it easier for the gate circuit to quickly reach the threshold voltage of the IGBT and realize the conduction of the IGBT, which can reduce the turn-on delay time and reduce the turn-on loss. When the IGBT is turned on, the boost signal is triggered first, and the boost signal is given to the first MOS tube to the third MOS tube to turn on the MOS tube. At this time, the 20V voltage will be directly and quickly supplied to the gate side of the IGBT. After the IGBT gate obtains the 20V voltage, it quickly reaches the threshold voltage for conduction. At this time, the IGBT will immediately reach the threshold turn-on voltage to realize the conduction of the IGBT tube. A detection circuit is designed. When the detection circuit detects that UGE is greater than the threshold voltage, the boost signal is turned off. In the three-in-one intelligent power module, the addition of an auxiliary circuit can better reduce the turn-on loss and reduce the heating problem caused by the loss.

[0021] In the three-in-one module, the boost signal (Boost signa) is controlled by an external control signal to control the conduction of the three MOS on the upper bridge. The external voltage quickly reaches the conduction threshold voltage, and the IGBT can be turned on quickly, reducing the heat problem caused by losses.

[0022] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, article or device. In the absence of more restrictions, an element defined by the sentence "includes a ..." does not exclude the existence of other identical elements in the process, article or device including the element.

[0023] The embodiments of the present invention are described above in conjunction with the accompanying drawings. What is disclosed is only the preferred embodiment of the present invention. However, the present invention is not limited to the above-mentioned specific implementation manner. The above-mentioned specific implementation manner is only illustrative rather than restrictive. Under the enlightenment of the present invention, ordinary technicians in this field can also make many forms and equivalent changes without departing from the scope of protection of the purpose of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. An intelligent power module, characterized in that: include: Rectifier bridge circuit, auxiliary circuit, inverter circuit, PFC circuit and driver IC circuit; The rectifier bridge circuit is used to connect an AC power supply, convert the AC power supply into a DC power supply and supply the DC power supply to the inverter circuit to achieve frequency conversion; the input end of the auxiliary circuit is used to connect a first power supply voltage, and the output end of the auxiliary circuit is connected to the input end of the inverter circuit to control the on and off of the inverter circuit; the output end of the inverter circuit is connected to the drive IC circuit, the input end of the PFC circuit is connected to the input end of the inverter circuit, and the output end of the PFC circuit is connected to the drive IC circuit.

2. The intelligent power module according to claim 1, characterized in that: The auxiliary circuit includes a first MOS tube, a second MOS tube and a third MOS tube, the source of the first MOS tube is respectively connected to the source of the second MOS tube and the source of the third MOS tube and connected to the first power supply voltage, the gate of the first MOS tube is respectively connected to the gate of the second MOS tube and the gate of the third MOS tube, the gate of the first MOS tube is also used to receive an external control signal, and the external control signal is output through the drain of the first MOS tube to control the on and off of the inverter circuit.

3. The intelligent power module according to claim 2, characterized in that: The inverter circuit comprises: a first IGBT tube, a second IGBT tube, a third IGBT tube, a fourth IGBT tube, a fifth IGBT tube and a sixth IGBT tube; The drain of the first IGBT tube is connected to the drain of the third IGBT tube and the drain of the fifth IGBT tube respectively, the gate of the first IGBT tube is connected to the drain of the first MOS tube, the gate of the third IGBT tube is connected to the drain of the second MOS tube, and the gate of the fifth IGBT tube is connected to the drain of the third MOS tube; The source of the first IGBT tube is connected to the drain of the second IGBT tube, the source of the third IGBT tube is connected to the drain of the fourth IGBT tube, the source of the fifth IGBT tube is connected to the drain of the sixth IGBT tube; the source of the second IGBT tube is connected to the source of the fourth IGBT tube and the source of the sixth IGBT tube respectively; The gate of the second IGBT tube, the gate of the fourth IGBT tube and the gate of the sixth IGBT tube are respectively connected to the driving IC circuit.

4. The intelligent power module according to claim 3, characterized in that: The PFC circuit includes: a seventh IGBT tube, a first resistor and a first diode, the gate of the seventh IGBT tube is connected to the drive IC circuit through the first resistor, the source of the seventh IGBT tube is connected to a second power supply voltage, the drain of the seventh IGBT tube is connected to the anode of the first diode, and the cathode of the first diode is connected to the drain of the first IGBT tube.

Citation Information

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