Light emitting diode and manufacturing method of light emitting diode
By stacking a fluorescent layer, a silicon atom layer and an epitaxial structure on the substrate of the light emitting diode, the stability problem caused by long-term irradiation of the organic silicone is solved, and higher stability and luminous flux retention are achieved.
Patent Information
- Application Number
- CN202411283964.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-13
- Publication Date
- 2025-02-07
AI Technical Summary
After long-term exposure to silicone, existing light emitting diodes lead to changes in molecular structure, cracking and carbonization, which leads to fall off of fluorescent structures and uneven light-out surfaces, large attenuation of luminous flux, and poor stability.
By layering the fluorescent layer, silicon atom layer and epitaxial structure in sequence on the substrate of the light emitting diode, long-term irradiation of organic silicone is avoided, and a silicon atom layer is added to ensure the smooth progress of epitaxial growth.
The stability of the light emitting diode is improved, the fluorescent structure falls off and the attenuation of luminous flux is avoided, and the normal progress of epitaxial growth is ensured.
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Figure CN119403322A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of light-emitting devices, and in particular to a light-emitting diode and a method for manufacturing the light-emitting diode. Background Art
[0002] Light-emitting diodes are semiconductor light-emitting devices that can be used in display, lighting and other display fields.
[0003] The related art provides a light emitting diode, which includes: a light emitting diode chip, organic silica gel and a fluorescent material, wherein the fluorescent material is adhered to the light emitting surface of the light emitting diode chip through the organic silica gel.
[0004] For the light-emitting diodes with the above structure, long-term exposure of the light-emitting diode chip to organic silicone causes changes in its molecular structure, which in turn causes a series of problems such as cracking and carbonization resulting in the falling off of the fluorescent structure of the light-emitting diode, and uneven light-emitting surface resulting in large luminous flux attenuation, resulting in poor stability of the light-emitting diode. Summary of the invention
[0005] The embodiments of the present disclosure provide a light emitting diode and a method for manufacturing the light emitting diode, which can improve the stability of the light emitting diode. The technical solution is as follows:
[0006] On the one hand, an embodiment of the present disclosure provides a light emitting diode, the light emitting diode comprising: a substrate, a fluorescent layer, a silicon atomic layer and an epitaxial structure;
[0007] The fluorescent layer, the silicon atomic layer and the epitaxial structure are sequentially stacked on the substrate.
[0008] Optionally, the epitaxial structure is a blue light epitaxial structure, and the fluorescent layer is a mixed fluorescent layer of red fluorescent material and green fluorescent material.
[0009] Optionally, the red fluorescent material is a nitride red fluorescent material, and the green fluorescent material is an aluminate green fluorescent material.
[0010] Optionally, the thickness of the fluorescent layer is D, 25<D<30μm.
[0011] Optionally, the light emitting diode further comprises:
[0012] A DBR reflective layer covers the epitaxial structure.
[0013] Optionally, the epitaxial structure comprises: a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence;
[0014] The fluorescent layer and the silicon atomic layer are located between the substrate and the first semiconductor layer.
[0015] On the other hand, the present disclosure also provides a method for manufacturing a light emitting diode, the method comprising:
[0016] Making a fluorescent layer;
[0017] Disposing the fluorescent layer on a substrate;
[0018] forming a silicon atomic layer on the surface of the fluorescent layer;
[0019] An epitaxial structure is fabricated on the silicon atomic layer.
[0020] Optionally, the step of making the fluorescent layer includes:
[0021] Mixing red fluorescent material and green fluorescent material in proportion, and adding GaN powder as a bonding additive to obtain a fluorescent layer raw material mixture;
[0022] Pressing the fluorescent layer raw material mixture through a mold at high temperature to melt the surface of the GaN powder in the fluorescent layer raw material mixture to form a fluorescent stick;
[0023] The fluorescent stick is subjected to the steps of slicing, grinding, grinding, polishing and cutting in sequence to obtain the fluorescent layer.
[0024] Optionally, the step of pressing the fluorescent layer raw material mixture through a mold at high temperature includes:
[0025] The fluorescent layer raw material mixture is pressed by a mold in an environment with a temperature of 2200-2500° C. for 20-30 seconds.
[0026] Optionally, the step of disposing the fluorescent layer on a substrate comprises:
[0027] In an environment where the ultrasonic frequency is 30-40 kHz and the temperature is 2200-2500° C., the fluorescent layer is disposed on the substrate by welding for a duration of 5-10 ms.
[0028] The technical solution provided by the embodiments of the present disclosure has the following beneficial effects:
[0029] In the disclosed embodiment, the fluorescent layer is arranged between the substrate and the epitaxial structure. Compared with the related art that uses organic silicone to paste fluorescent materials on the light-emitting surface of the light-emitting diode chip, the light-emitting diode is irradiated with organic silicone for a long time to change its molecular structure, thereby avoiding a series of problems such as cracking and carbonization causing the fluorescent structure of the light-emitting diode to fall off, and uneven light-emitting surface causing large light flux attenuation, thereby improving the stability of the light-emitting diode. In addition, a layer of silicon atoms is formed on the surface of the fluorescent layer to ensure the smooth progress of subsequent epitaxial growth, so that the epitaxial growth is not affected after the fluorescent layer is added. BRIEF DESCRIPTION OF THE DRAWINGS
[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0031] Figure 1 is a structural schematic diagram of a light emitting diode provided by an embodiment of the present disclosure;
[0032] Figure 2 is a schematic structural diagram of another light emitting diode provided by an embodiment of the present disclosure;
[0033] Figure 3 is a flow chart of a method for manufacturing a light emitting diode provided by an embodiment of the present disclosure;
[0034] Figure 4 This is a flow chart of another method for manufacturing a light emitting diode provided in an embodiment of the present disclosure.
[0035] The reference numerals are as follows:
[0036] 100: substrate; 200: fluorescent layer; 300: silicon atomic layer; 400: epitaxial structure; 500: DBR reflective layer; 101: first semiconductor layer; 102: active layer; 103: second semiconductor layer; 104: first DBR reflective layer; 105: first electrode; 106: second electrode; 107: second DBR reflective layer; 108: first electrode pad; 109: second electrode pad; 110: first through hole; 111: second through hole; 112: third through hole; 113: fourth through hole. DETAILED DESCRIPTION
[0037] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.
[0038] Figure 1 is a schematic diagram of the structure of a light emitting diode provided by an embodiment of the present disclosure. Figure 1 , the light emitting diode comprises: a substrate 100, a fluorescent layer 200, a silicon atom layer 300 and an epitaxial structure 400;
[0039] The fluorescent layer 200 , the silicon atomic layer 300 , and the epitaxial structure 400 are sequentially stacked on the substrate 100 .
[0040] In the disclosed embodiment, the fluorescent layer is arranged between the substrate and the epitaxial structure. Compared with the related art that uses organic silicone to paste fluorescent materials on the light-emitting surface of the light-emitting diode chip, the light-emitting diode is irradiated with organic silicone for a long time to change its molecular structure, thereby avoiding a series of problems such as cracking and carbonization causing the fluorescent structure of the light-emitting diode to fall off, and uneven light-emitting surface causing large light flux attenuation, thereby improving the stability of the light-emitting diode. In addition, a layer of silicon atoms is formed on the surface of the fluorescent layer to ensure the smooth progress of subsequent epitaxial growth, so that the epitaxial growth is not affected after the fluorescent layer is added.
[0041] In a possible implementation of the present disclosure, the epitaxial structure 400 is a blue light epitaxial structure, and the fluorescent layer 200 is a mixed fluorescent layer of red fluorescent material and green fluorescent material.
[0042] In this implementation, a red and green inorganic mixed fluorescent layer is added between the blue light epitaxial structure and the substrate. The epitaxial structure emits blue light to excite the red and green mixed fluorescent substances in the fluorescent layer, so that the light-emitting diode emits white light.
[0043] In this implementation, on the one hand, the use of blue light plus red and green fluorescent layers can make the white light more realistic and natural. On the other hand, the blue light epitaxial structure is simpler to implement, which facilitates the production of the entire light-emitting diode.
[0044] Exemplarily, the red fluorescent material is a nitride red fluorescent material, and the green fluorescent material is an aluminate green fluorescent material.
[0045] In this implementation, the fluorescent layer is made of the above two inorganic substances, which has the advantages of simple preparation of fluorescent substances and high strength of constituent materials.
[0046] In addition, compared to the related art solution of setting a fluorescent layer after the LED is manufactured, the embodiment of the present disclosure moves the white light synthesis process forward to the chip LED manufacturing stage, which can effectively shorten the finished product packaging process cycle, reduce the tolerance between fluorescent layers through a more sophisticated polishing process, improve the color consistency and concentration of the finished package, and improve the yield of the finished package.
[0047] Exemplarily, the mixing ratio C of the nitride red fluorescent material and the aluminate green fluorescent material can be determined according to the color temperature of the light emitted by the epitaxial structure. For example, at a color temperature of 6500K, C=1:50; for another example, at a color temperature of 3000K, C=1:25.
[0048] In other possible implementations, the epitaxial structure 400 can also be an epitaxial structure of other colors, such as red light, green light or yellow light, and the corresponding fluorescent layer is also a fluorescent layer corresponding to these light colors, so that the light emitted by these epitaxial structures becomes white after passing through.
[0049] In the embodiment of the present disclosure, the thickness of the fluorescent layer 200 is D, 25<D<30 μm.
[0050] Exemplarily, the thickness D of the fluorescent layer 200 is 28 μm.
[0051] In this implementation, using the fluorescent layer with the above thickness can ensure the color conversion effect of the fluorescent layer on the one hand, and on the other hand, it will not be too thick to cause the thickness of the entire light emitting diode to be too large.
[0052] Figure 2 is a schematic diagram of the structure of another light emitting diode provided by an embodiment of the present disclosure. Figure 2 , light emitting diodes also include:
[0053] A distributed Bragg reflector (DBR) reflective layer 500 , wherein the DBR reflective layer 500 covers the epitaxial structure 400 .
[0054] In this implementation, the DBR reflective layer is provided so that the light is reflected, passes through the fluorescent layer, and is emitted from the substrate side.
[0055] See again Figure 2 , the epitaxial structure 400 includes: a first semiconductor layer 101, an active layer 102, and a second semiconductor layer 103 stacked in sequence;
[0056] The fluorescent layer 200 and the silicon atom layer 300 are located between the substrate 100 and the first semiconductor layer 101 .
[0057] like Figure 2 As shown, the first semiconductor layer 101 , the active layer 102 and the second semiconductor layer 103 form a step structure, and the step surface is located in the first semiconductor layer 101 .
[0058] like Figure 2 As shown, the DBR reflective layer 500 includes a first DBR reflective layer 104 and a second DBR reflective layer 107 .
[0059] In the embodiment of the present disclosure, the first DBR reflective layer 104 has a first through hole 110 and a second through hole 111 . The first through hole 110 penetrates the first DBR reflective layer 104 and communicates with the first semiconductor layer 101 . The second through hole 111 penetrates the first DBR reflective layer 104 and communicates with the second semiconductor layer 103 .
[0060] The light emitting diode further includes a first electrode 105 , a second electrode 106 , a first electrode pad 108 and a second electrode pad 109 .
[0061] The first DBR reflective layer 104 covers the stepped structure.
[0062] The first electrode 105 penetrates the first DBR reflective layer 104 (ie, through a first through hole) and is connected to the first semiconductor 101 . The second electrode 106 penetrates the first DBR reflective layer 104 (ie, through a second through hole) and is connected to the second semiconductor layer 103 .
[0063] The second DBR reflective layer 107 covers the first DBR reflective layer 104 , the first electrode 105 and the second electrode 106 .
[0064] In the disclosed embodiment, the second DBR reflective layer 107 has a third through hole 112 and a fourth through hole 113 . The third through hole 112 penetrates the second DBR reflective layer 107 and communicates with the first electrode 105 . The fourth through hole 113 penetrates the second DBR reflective layer 107 and communicates with the second electrode 106 .
[0065] The first electrode pad 108 penetrates the second DBR reflective layer 107 (ie, through the third through hole) and is connected to the first electrode 105 , and the second electrode pad 109 penetrates the second DBR reflective layer 107 (ie, through the fourth through hole) and is connected to the second electrode 106 .
[0066] In the embodiment of the present disclosure, the substrate 100 may be a sapphire substrate.
[0067] Optionally, a transparent conductive layer may be further disposed between the second semiconductor layer 103 and the second electrode 106 .
[0068] In the embodiment of the present disclosure, the first semiconductor layer 101 may be an N-type semiconductor layer, the active layer 102 may be a multi-quantum well layer, and the second semiconductor layer 103 may be a P-type semiconductor layer.
[0069] Exemplarily, the first semiconductor layer 101 is an N-type GaN layer, the active layer 102 is an InGaN / GaN layer, and the second semiconductor layer 103 is a P-type GaN layer.
[0070] In another example, the first semiconductor layer 101 may be a P-type semiconductor layer, the active layer 102 may be a multi-quantum well layer, and the second semiconductor layer 103 may be an N-type semiconductor layer.
[0071] In the embodiment of the present disclosure, the transparent conductive layer may be an indium tin oxide (ITO) layer.
[0072] In the embodiment of the present disclosure, the first DBR reflective layer 104 and the second DBR reflective layer 107 may be a DBR structure formed by alternating SiO 2 and Ti 3 O 5 in multiple periods.
[0073] In the embodiment of the present disclosure, the first electrode 105 and the second electrode 106 include a Cr layer, an Al layer, a Ti layer, a Ni layer, a Pt layer, and an Au layer stacked in sequence.
[0074] In the embodiment of the present disclosure, the first electrode pad 108 and the second electrode pad 109 include a Ti layer, an Al layer, a Ti layer, an Al layer, a Ti layer, a Pt layer, and an AuSn layer stacked in sequence.
[0075] In one example, when the first semiconductor layer 101 is an N-type semiconductor layer, the first electrode 105 is an N-electrode, and the first electrode pad 108 is an N-electrode pad; when the second semiconductor layer 103 is a P-type semiconductor layer, the second electrode 106 is a P-electrode, and the second electrode pad 109 is a P-electrode pad.
[0076] In another example, when the first semiconductor layer 101 is a P-type semiconductor layer, the first electrode 105 is a P-electrode, and the first electrode pad 108 is a P-electrode pad; when the second semiconductor layer 103 is an N-type semiconductor layer, the second electrode 106 is an N-electrode, and the second electrode pad 109 is an N-electrode pad.
[0077] It should be noted that the above epitaxial structure is only an example, and in other embodiments, the epitaxial structure may further include other layers, such as a current blocking layer, a silver mirror layer, etc. The embodiment of the present disclosure does not limit the structure of the epitaxial structure.
[0078] Figure 3 A method for manufacturing a light emitting diode is provided in an embodiment of the present disclosure. Figure 3 The method steps include:
[0079] S11. Making a fluorescent layer.
[0080] S12, disposing the fluorescent layer on a substrate.
[0081] Illustratively, the substrate may be a sapphire substrate.
[0082] S13, forming a silicon atomic layer on the surface of the fluorescent layer.
[0083] S14, fabricating an epitaxial structure on the silicon atomic layer.
[0084] Illustratively, the epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence.
[0085] In the embodiment of the present disclosure, the first semiconductor layer may be an N-type semiconductor layer, the active layer may be a multi-quantum well layer, and the second semiconductor layer may be a P-type semiconductor layer.
[0086] Exemplarily, the first semiconductor layer is an N-type GaN layer, the active layer is an InGaN / GaN layer, and the second semiconductor layer is a P-type GaN layer.
[0087] In another example, the first semiconductor layer may be a P-type semiconductor layer, the active layer may be a multi-quantum well layer, and the second semiconductor layer may be an N-type semiconductor layer.
[0088] In the disclosed embodiment, the fluorescent layer is arranged between the substrate and the epitaxial structure. Compared with the related art that uses organic silicone to paste fluorescent materials on the light-emitting surface of the light-emitting diode chip, the light-emitting diode is irradiated with organic silicone for a long time to change its molecular structure, thereby avoiding a series of problems such as cracking and carbonization causing the fluorescent structure of the light-emitting diode to fall off, and uneven light-emitting surface causing large light flux attenuation, thereby improving the stability of the light-emitting diode. In addition, a layer of silicon atoms is formed on the surface of the fluorescent layer to ensure the smooth progress of subsequent epitaxial growth, so that the epitaxial growth is not affected after the fluorescent layer is added.
[0089] Figure 4 This is a flow chart of another method for manufacturing a light emitting diode provided in an embodiment of the present disclosure. Figure 4 The method steps include:
[0090] S21. Making a fluorescent layer.
[0091] In the embodiment of the present disclosure, step S21 may include:
[0092] In the first step, red fluorescent material and green fluorescent material are mixed in proportion, and GaN powder is added as a bonding additive to obtain a fluorescent layer raw material mixture.
[0093] Exemplarily, red fluorescent material and green fluorescent material are mixed in proportion according to color temperature requirements, and GaN powder (particle size 4-6 μm) of about 2% of the fluorescent mixture mass is added as a bonding additive to obtain a fluorescent layer raw material mixture.
[0094] For example, the brightness of GaN powder is 5μm.
[0095] Exemplarily, the mixing ratio C of the nitride red fluorescent material and the aluminate green fluorescent material can be determined according to the color temperature of the light emitted by the epitaxial structure. For example, at a color temperature of 6500K, C=1:50; for another example, at a color temperature of 3000K, C=1:25.
[0096] The second step is to press the fluorescent layer raw material mixture through a mold at high temperature to melt the surface of the GaN powder in the fluorescent layer raw material mixture to form a fluorescent stick.
[0097] Exemplarily, the fluorescent layer raw material mixture is pressed by a mold in an environment with a temperature of 2200 to 2500° C. for 20 to 30 seconds.
[0098] For example, the fluorescent layer raw material mixture is pressed by a mold under a temperature of 2400° C. for 25 seconds.
[0099] The third step is to sequentially slice, grind, grind, polish and cut the fluorescent stick to obtain the fluorescent layer.
[0100] Among them, the purpose of grinding is to reduce thinning, the purpose of grinding and polishing is to reduce roughness, and cutting is used for fluorescent layer molding.
[0101] In the implementation of the present disclosure, preparing the fluorescent layer by the above-mentioned solution can ensure both the fluorescent effect and the quality of the fluorescent layer.
[0102] S22, disposing the fluorescent layer on a substrate.
[0103] Illustratively, the substrate may be a sapphire substrate.
[0104] In the embodiment of the present disclosure, the step of disposing the fluorescent layer on the substrate includes:
[0105] In an environment where the ultrasonic frequency is 30-40 kHz and the temperature is 2200-2500° C., the fluorescent layer is disposed on the substrate by welding for a duration of 5-10 ms.
[0106] For example, the fluorescent layer is disposed on the substrate by welding in an environment with an ultrasonic frequency of 35 kHz and a temperature of 2400° C., and the duration is 8 ms.
[0107] In this implementation, the combination effect of the fluorescent layer and the substrate can be ensured by welding without affecting the fluorescent effect of the fluorescent layer.
[0108] S23. Forming a silicon atomic layer on the surface of the fluorescent layer.
[0109] Exemplarily, hydrogen (H2) is used as a carrier gas to carry silicon tetrachloride (SiCl4) or trichlorosilane (SiHCl3) into a reaction chamber, and a chemical reaction is carried out in the reaction chamber to cause a reduction reaction of the silicon-containing reaction gas. The generated silicon atoms are deposited on the surface of the fluorescent layer, and the silicon atom layer can ensure the normal progress of subsequent epitaxial growth.
[0110] Among them, the chemical reaction occurring on the surface of the fluorescent layer is one of the following:
[0111] SiCl4+2H2=Si+4HCl;
[0112] SiHCl3+H2=Si+3HCl.
[0113] Among them, HCl is a gas, so only Si atoms are left attached to the surface of the fluorescent layer to form a silicon atomic layer.
[0114] S24, sequentially fabricating a first semiconductor layer, an active layer, and a second semiconductor layer on the surface of the silicon atomic layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer form a step structure.
[0115] In the embodiment of the present disclosure, the first semiconductor layer is an N-type GaN layer, the active layer is an InGaN / GaN layer, and the second semiconductor layer is a P-type GaN layer.
[0116] In one example, step S24 includes:
[0117] The first step is to grow the first semiconductor layer.
[0118] Wherein, the first semiconductor layer is an N-type GaN layer.
[0119] For example, a Metal Organic Chemical Vapor Deposition (MOCVD) device is used to grow an N-type GaN layer on the surface of the fluorescent layer.
[0120] In the disclosed embodiment, the growth of the semiconductor layer can be achieved by using Veeco K465i or C4 or RB MOCVD equipment or AIXTRON metal organic compound chemical vapor deposition equipment. High purity H2 (hydrogen) or high purity N2 (nitrogen) or a mixture of high purity H2 and high purity N2 is used as a carrier gas, high purity NH3 is used as an N source, trimethyl gallium (TMGa) and triethyl gallium (TEGa) are used as gallium sources, trimethyl indium (TMIn) is used as an indium source, silane (SiH4) is used as an N-type dopant, trimethyl aluminum (TMAl) is used as an aluminum source, and bis(cyclopentadienyl) magnesium (CP2Mg) is used as a P-type dopant.
[0121] The second step is to grow the active layer.
[0122] Among them, the active layer is an InGaN / GaN layer.
[0123] Exemplarily, an InGaN / GaN layer is grown on the surface of the N-type GaN layer using MOCVD equipment.
[0124] The third step is to grow the second semiconductor layer.
[0125] Wherein, the second semiconductor layer is a P-type GaN layer.
[0126] Exemplarily, a P-type GaN layer is grown on the surface of the InGaN / GaN layer using MOCVD equipment.
[0127] In the fourth step, the first semiconductor layer, the active layer and the second semiconductor layer are patterned to form a step structure.
[0128] Exemplarily, an inductively coupled plasma (ICP) etching technique is used to pattern the first semiconductor layer, the active layer, and the second semiconductor layer stacked sequentially in the epitaxial structure to form a step structure.
[0129] S25, manufacturing a transparent conductive layer, wherein the transparent conductive layer is located on the surface of the second semiconductor layer.
[0130] In one example, step S25 includes:
[0131] The transparent conductive film is formed by magnetron sputtering technology, and the transparent conductive film is patterned by etching technology to obtain a transparent conductive layer.
[0132] Wherein, the transparent conductive layer is an ITO layer.
[0133] S26 , manufacturing a first DBR reflective layer, wherein the first DBR reflective layer covers the step structure and the transparent conductive layer.
[0134] In an example, the first DBR reflective layer may be a DBR structure formed by alternating SiO2 and Ti3O5 in multiple periods.
[0135] In one example, step S26 includes: depositing a first DBR reflective film; forming a first through hole and a second through hole in the first DBR reflective film by a patterning technique to obtain a first DBR reflective layer.
[0136] S27, manufacturing a first electrode and a second electrode, wherein the first electrode penetrates the first DBR reflective layer and is connected to the first semiconductor layer, and the second electrode penetrates the first DBR reflective layer and is connected to the second semiconductor layer.
[0137] In one example, step S27 includes:
[0138] The first electrode is manufactured in the first through hole by using electron beam evaporation technology, and the second electrode is manufactured in the second through hole.
[0139] In the embodiment of the present disclosure, when using electron beam evaporation technology to evaporate electrodes or pads, a photoresist mask pattern can be first formed, and the photoresist mask pattern has through grooves corresponding to the arrangement positions of the electrodes or pads; then the metal stack of the electrodes or pads is deposited; finally, the photoresist mask pattern and the metal stack on the surface of the photoresist mask pattern are removed, leaving the metal stack in the through grooves as the electrodes or pads.
[0140] In the embodiment of the present disclosure, the first electrode and the second electrode include a Cr layer, an Al layer, a Ti layer, a Ni layer, a Pt layer, and an Au layer stacked in sequence.
[0141] S28. Make a second DBR reflective layer, wherein the second DBR reflective layer covers the first DBR reflective layer, the first electrode and the second electrode.
[0142] In an example, the second DBR reflective layer may be a DBR structure formed by alternating SiO2 and Ti3O5 in multiple periods.
[0143] In one example, step S28 includes: depositing a second DBR reflective film; forming a third through hole and a fourth through hole in the second DBR reflective film by a patterning technique to obtain a second DBR reflective layer.
[0144] S29, manufacturing a first electrode pad and a second electrode pad, wherein the first electrode pad penetrates the second DBR reflective layer and is connected to the first electrode, and the second electrode pad penetrates the second DBR reflective layer and is connected to the second electrode.
[0145] In one example, step S29 includes:
[0146] The first electrode pad is manufactured in the third through hole and the second electrode pad is manufactured in the fourth through hole by using electron beam evaporation technology.
[0147] In the embodiment of the present disclosure, the first electrode pad and the second electrode pad include a Ti layer, an Al layer, a Ti layer, an Al layer, a Ti layer, a Pt layer, and an AuSn layer stacked in sequence.
[0148] The above description is only an optional embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.
Claims
1. A light emitting diode, characterized in that: The light emitting diode comprises: a substrate (100), a fluorescent layer (200), a silicon atom layer (300) and an epitaxial structure (400); The fluorescent layer (200), the silicon atomic layer (300) and the epitaxial structure (400) are sequentially stacked on the substrate (100).
2. The light emitting diode according to claim 1, characterized in that: The epitaxial structure (400) is a blue light epitaxial structure, and the fluorescent layer (200) is a mixed fluorescent layer of red fluorescent material and green fluorescent material.
3. The light emitting diode according to claim 2, characterized in that: The red fluorescent material is a nitride red fluorescent material, and the green fluorescent material is an aluminate green fluorescent material.
4. The light emitting diode according to any one of claims 1 to 3, characterized in that: The thickness of the fluorescent layer (200) is D, 25<D<30μm.
5. The light emitting diode according to any one of claims 1 to 3, characterized in that: The light emitting diode further comprises: A DBR reflective layer (500), wherein the DBR reflective layer (500) covers the epitaxial structure (400).
6. The light emitting diode according to any one of claims 1 to 3, characterized in that: The epitaxial structure (400) comprises: a first semiconductor layer (101), an active layer (102) and a second semiconductor layer (103) stacked in sequence; The fluorescent layer (200) and the silicon atomic layer (300) are located between the substrate (100) and the first semiconductor layer (101).
7. A method for manufacturing a light emitting diode, characterized in that: The method comprises: Making a fluorescent layer; Disposing the fluorescent layer on a substrate; forming a silicon atomic layer on the surface of the fluorescent layer; An epitaxial structure is fabricated on the silicon atomic layer.
8. The method according to claim 7, characterized in that The method of making the fluorescent layer comprises: Mixing red fluorescent material and green fluorescent material in proportion, and adding GaN powder as a bonding additive to obtain a fluorescent layer raw material mixture; Pressing the fluorescent layer raw material mixture through a mold at high temperature to melt the surface of the GaN powder in the fluorescent layer raw material mixture to form a fluorescent stick; The fluorescent stick is subjected to the steps of slicing, grinding, grinding, polishing and cutting in sequence to obtain the fluorescent layer.
9. The method according to claim 8, characterized in that The step of pressing the fluorescent layer raw material mixture by a mold at high temperature comprises: The fluorescent layer raw material mixture is pressed by a mold in an environment with a temperature of 2200-2500° C. for 20-30 seconds.
10. The method according to any one of claims 7 to 9, characterized in that: The step of disposing the fluorescent layer on the substrate comprises: In an environment where the ultrasonic frequency is 30-40 kHz and the temperature is 2200-2500° C., the fluorescent layer is disposed on the substrate by welding for a duration of 5-10 ms.