Component with radiator structure and manufacturing method thereof

Abstract

The present invention is a heat sink structure-equipped component (34) having a substrate member (31) on which an integrated circuit part (10) is formed, and a heat sink structure part (9) formed on the integrated circuit part (10), the heat sink structure-equipped component (34) being characterized in that the integrated circuit part (10) has a concavo-convex shape, and the heat sink structure part (9) is formed on the integrated circuit part (10). The heat sink structure part (9) has a convex-concave shape formed on the diamond layer (6) and fitted to the convex-concave shape of the integrated circuit part (10). Or a silicon substrate (8) on which a diamond layer (6) is formed, wherein a convex-concave shape that fits into the convex-concave shape of the integrated circuit part (10) is formed on the silicon substrate (8); the concave-convex shape of the heat sink structure portion (9) is fitted to the concave-convex shape of the integrated circuit portion (10), and the heat sink structure portion (9) is bonded to the substrate member (31), thereby providing a more effective heat dissipation structure.

Description

Technical Field

[0001] The present invention relates to a component with a heat sink structure and a method for manufacturing the same. The present invention provides a more efficient structure and means for semiconductor substrates and semiconductor devices, especially when diamond with high thermal conductivity is used as a heat sink material for semiconductor elements with improved performance. Background Art

[0002] As we enter the IoT (Internet of Things) era, the capacity (processing power, data storage capacity) of data centers continues to expand and improve through the active use of the cloud. With the improvement of performance, it is believed that the problem of heat generation from components has become more important than before. In fact, as shown in Non-Patent Document 1, one component consumes about 600W of electricity, and the thermal control associated with this becomes important.

[0003] In Non-Patent Document 1, a Compite Tile (computing chip block) and an HBM (High Band pass Memory) are connected to a heat sink (Integrated Heat Spreader) via an intermediate material (Thermal Interface Material).

[0004] On the other hand, in anticipation of 5G, solid-state power amplifiers that are easy to achieve compactness and lightness are widely used as high-frequency amplifiers for mobile communication base stations and satellite communication systems. As mentioned above, in these amplifiers, the temperature inside the element rises due to self-heating during amplification, which causes the element characteristics and reliability to deteriorate, which is a problem.

[0005] As a specific solution, a commonly used method is to connect a metal with high thermal conductivity, such as copper, to a component (heating element) (heat sink), make fins on the metal, and cool it by air cooling or cooling material (water cooling, etc.) to control the temperature rise. According to non-patent document 2, if we focus on thermal conductivity (unit W / mK), diamond has a high thermal conductivity of 1000-2000 compared to copper, so diamond is very effective as a heat dissipation material for components.

[0006] In fact, focusing on this high thermal conductivity, it has been proposed to use it as a heat dissipation material for semiconductor elements. Patent Document 1 discloses that diamond or a material containing diamond having high thermal conductivity is attached to the back surface of a semiconductor element.

[0007] Patent Document 2 discloses a method of growing or attaching diamond in an integrated circuit package that integrates semiconductor elements.

[0008] Furthermore, focusing on the heat conduction mechanism of diamond itself, Patent Document 3 discloses a method of controlling the isotopes of carbon constituting diamond to increase thermal conductivity.

[0009] As described above, heat dissipation (heat sink) using diamond has attracted much attention due to its high thermal conductivity. There are also methods for increasing the thermal conductivity of diamond to the limit, such as Patent Document 3, but in practice, how to contact diamond with semiconductor elements is a technical problem.

[0010] Patent document 2 discloses growing diamond on an integrated circuit, or bonding diamond grown on another substrate. However, the growth of diamond, whether single crystal or polycrystalline, requires a temperature of 800°C or more and plasma, and there are many limitations in terms of device protection when growing diamond on a semiconductor integrated circuit.

[0011] by Figure 6 Based on this, a heat sink formed on an integrated circuit using diamond will be described.

[0012] Figure 6 This is an explanatory diagram including the structure of a general cooling device.

[0013] like Figure 6 As shown, in a structure 134 including a conventional cooling device, a heat sink (cooling device) metal 101 is formed via an intermediate material (dummy silicone) 102 on a laminated body including a core (Core) 103 such as a CPU (central processing unit), Cash / HBM 104-1, 104-2, or an integrated circuit supporting substrate 105 such as a PCB (printed circuit board).

[0014] Thus, for current integrated circuits, the mainstream structure is to stack the core such as CPU and memory such as flash memory or HBM on silicon or other substrates. Therefore, the height varies depending on the component (CPU or memory, etc.), so the height after integration also varies. Generally speaking, Figure 6 In order to eliminate the step difference, after laminating dummy silicon or other materials, a metal such as Cu is bonded as a heat sink, or diamond as disclosed in Patent Document 2 is bonded.

[0015] Prior art literature

[0016] Patent Literature

[0017] Patent Document 1: Japanese Patent Application Publication No. 2004-158726

[0018] Patent Document 2: Japanese Patent Application No. 2005-500668

[0019] Patent Document 3: Japanese Patent Application Publication No. 2021-119602

[0020] Non-patent literature

[0021] Non-patent literature 1: ISSCC2022, Wilfred Gomes, et. al., “2.1 Ponte Vecchio; A Multi-Tile 3D Stacked Processor for Exascale Computing”

[0022] Non-patent document 2: AIST / Distributed Thermophysical Property Database (https: / / tpds.db.aist.go.jp / opendata / metal_tc.html) Summary of the invention

[0023] 1. Technical issues to be resolved

[0024] In high-performance CPUs / GPUs (graphics processing units) / NPUs (network processing units) used in data centers, which are becoming more integrated as their performance and functionality advance, heat dissipation measures are extremely important in order to prevent component malfunctions and reliability degradation.

[0025] The technical problem of the present invention is to provide a more efficient heat dissipation structure and a method for manufacturing the heat dissipation structure which can be simply formed without causing damage to the integrated circuit.

[0026] The present invention is made to solve the above-mentioned technical problems, and provides a more efficient structure and means when diamond having high thermal conductivity is used as a heat dissipation material for semiconductor elements with advanced performance.

[0027] (II) Technical solution

[0028] The present invention is completed in order to achieve the above-mentioned purpose, and provides a component with a heat sink structure, which has a substrate component and a heat sink structure part, the substrate component is formed with an integrated circuit part, and the heat sink structure part is formed on the integrated circuit part. The component with the heat sink structure is characterized in that the integrated circuit part forms a concave-convex shape, and the heat sink structure part is: a convex-concave shape that is embedded in the concave-convex shape of the integrated circuit part is formed on a diamond layer; or a silicon substrate is formed with a diamond layer, and a convex-concave shape that is embedded in the concave-convex shape of the integrated circuit part is formed on the silicon substrate, so that the convex-concave shape of the heat sink structure part is embedded in the concave-convex shape of the integrated circuit part, and the heat sink structure part is attached to the substrate component.

[0029] According to such a component with a heat sink structure, it is possible to manufacture an element with higher heat dissipation efficiency. Specifically, when diamond (heat sink) for heat dissipation is stacked on an integrated circuit, a shape matching the concave and convex of the integrated circuit is made on the diamond previously stacked on another substrate and then bonded.

[0030] By using diamond, it is expected that the heat dissipation characteristics can be improved by utilizing the high thermal conductivity of diamond. In addition, diamond grown on a silicon substrate can be used to remove or partially remove the silicon substrate before bonding. By using a silicon substrate that is easy to process as a material, the heat dissipation characteristics can be maintained even if the integrated circuit has unevenness.

[0031] At this time, it can be set as: in the component with a heat sink structure as described above, it is characterized in that the heat sink structure part is a wafer, the substrate part is a wafer with the integrated circuit part, and the component with a heat sink structure is formed by bonding the wafers to each other.

[0032] In the case of wafer-to-wafer bonding, by processing the silicon (thickness and shape in the XY direction) in accordance with the integrated circuits pre-fabricated on the silicon substrate, efficient bonding can be performed, and a high heat dissipation structure can be easily formed.

[0033] At this time, it can be set as: in the component with a heat sink structure as described above, it is characterized in that the heat sink structure part is a chip, the substrate part is a wafer having the integrated circuit part, and the component with a heat sink structure is formed by bonding the chip and the wafer.

[0034] As a chip-to-wafer method, a diamond-grown silicon substrate is cut into the size of an integrated circuit (diamond chip) and arranged. A small piece of the diamond chip is prepared in advance, attached to the concave part of the integrated circuit, and then the diamond-grown silicon substrate is attached on it to cover the entire integrated circuit, and finally the silicon is removed. This production method can easily form a high heat dissipation structure without damaging the integrated circuit.

[0035] At this time, it can be set as follows: in the component with a heat sink structure as described above, it is characterized in that the heat sink structure part is a chip, the substrate component is a chip, and the component with a heat sink structure is formed by bonding the chips to each other.

[0036] In a chip-to-chip method, a silicon substrate on which diamonds have been grown is cut into the size of an integrated circuit (diamond chip) and arranged, a shape matching the integrated circuit is prepared on the diamond chip by photolithography or other methods and attached, and then the silicon substrate on which diamonds have been grown is attached thereto in a manner covering the entire integrated circuit, and finally the silicon is removed.

[0037] Through this manufacturing method, a high heat dissipation structure can be simply formed without causing damage to the integrated circuit.

[0038] At this time, it can be set as follows: in the component with a heat sink structure as described above, it is characterized in that the diamond layer is a CVD (chemical vapor deposition) diamond layer.

[0039] By growing diamond by CVD on a silicon substrate, a structure with high heat dissipation performance can be easily formed.

[0040] The present invention is completed in order to achieve the above-mentioned purpose, and provides a method for manufacturing a component with a heat sink structure, characterized in that it has the following steps: preparing a substrate component with an integrated circuit part and having a concave-convex shape; preparing a silicon substrate with a diamond layer; forming a convex-concave shape on the diamond layer that fits into the concave-convex shape of the integrated circuit part, or forming a convex-concave shape on the silicon substrate that fits into the concave-convex shape of the integrated circuit part; and, after fitting the convex-concave shape of the diamond layer into the concave-convex shape of the integrated circuit part and bonding them, removing the silicon substrate on the surface and forming a heat sink structure part composed only of the diamond layer on the substrate component, or fitting and bonding the convex-concave shape of the silicon substrate into the concave-convex shape of the integrated circuit part to form a heat sink structure part composed of the diamond layer and the silicon substrate.

[0041] A heterogeneous substrate on which diamond is grown is prepared as the heat sink, and a convex-concave shape that fits into the concave-convex shape of the integrated circuit part is formed on the diamond layer of the substrate, or the silicon part is thinned in advance and then the silicon is processed to match the shape of the integrated circuit.

[0042] When the silicon portion is thinned, the thickness thereof can be matched with the concavo-convex of the integrated circuit in advance, so that the heat sink and the elements of the integrated circuit can be brought into close contact, thereby achieving efficient heat conduction.

[0043] In addition, for the silicon processing, the usual photolithography technology and the subsequent etching technology can be directly used. In addition, there are various methods for processing the thin-filmed wafer, such as a method of attaching a dummy substrate to the diamond side in advance, or a method of leaving thicker silicon only on the outer periphery of the silicon in advance, etc., and the method is not limited here.

[0044] By processing silicon in advance in this way, the silicon layer between the diamond and the integrated circuit can be made as thin as possible, thereby forming an efficient heat sink.

[0045] This manufacturing method can easily form a high heat dissipation structure without causing damage to the integrated circuit.

[0046] At this time, preferably, in the convex-concave shape forming step, at least a portion of the silicon substrate is removed to form the convex-concave shape in accordance with the convex-concave shape of the integrated circuit portion.

[0047] This manufacturing method can easily form a high heat dissipation structure without causing damage to the integrated circuit.

[0048] At this time, it can be set as: in the manufacturing method of the component with a heat sink structure as mentioned above, it is characterized in that it also includes the following steps: the silicon substrate formed with the diamond layer is cut into small pieces to form diamond chips, and in the step of forming the heat sink structure part, the diamond chips are arranged and the heat sink structure part is adhered to the substrate part in a manner that the convex and concave shape of the diamond layer or the silicon substrate is embedded in the concave and convex shape of the integrated circuit part.

[0049] This manufacturing method can easily form a high heat dissipation structure without causing damage to the integrated circuit.

[0050] At this time, after the step of forming the heat sink structure, the following steps may be further performed: attaching another silicon substrate on which a diamond layer is grown so that the silicon substrate is located on the surface side and covers all the diamond chips arranged on the substrate component; and removing the silicon substrate.

[0051] This manufacturing method can easily form a high heat dissipation structure without causing damage to the integrated circuit.

[0052] At this time, the following steps can also be included: cutting the silicon substrate on which the diamond layer is formed into small pieces to form a diamond chip; and cutting the substrate component on which the integrated circuit part is formed into small pieces to form a chip with an integrated circuit. In the step of forming the heat sink structure, after arranging the chips with the integrated circuit, the diamond chip is adhered in such a way that the convex and concave shapes are embedded in the concave and convex shapes of the integrated circuit part, thereby forming the heat sink structure on the substrate component.

[0053] This manufacturing method can easily form a high heat dissipation structure without causing damage to the integrated circuit.

[0054] At this time, it can be set as follows: in the manufacturing method of a component with a heat sink structure as mentioned above, after the process of forming the heat sink structure part, the following process can be further included: attaching another silicon substrate on which a diamond layer is grown in such a manner that the silicon substrate is placed on the surface side and covers all the diamond chips arranged on the substrate component; and removing the silicon substrate.

[0055] This manufacturing method can easily form a high heat dissipation structure without causing damage to the integrated circuit.

[0056] (III) Beneficial effects

[0057] As described above, in the component with a heat dissipation structure of the present invention, the use of diamond can achieve improvement in heat dissipation characteristics due to the high thermal conductivity of diamond.

[0058] In addition, if it is a method for manufacturing a component with a heat dissipation structure, a diamond layer can be formed without damaging the integrated circuit, and a high heat dissipation structure can be simply formed. In addition, a diamond material grown on a silicon substrate can be used, and a large-diameter substrate can be used. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] Figure 1 It is an explanatory diagram of a component with a heat dissipation structure according to the present invention.

[0060] Figure 2 It is an explanatory diagram of a method for manufacturing a component with a heat dissipation structure according to the present invention.

[0061] Figure 3 It is an explanatory diagram of a method for manufacturing a component with a heat dissipation structure according to the present invention, and is a diagram showing wafer-to-wafer bonding.

[0062] Figure 4 It is an explanatory diagram of a method for manufacturing a component with a heat dissipation structure according to the present invention, and is a diagram showing bonding of a chip to a wafer.

[0063] Figure 5 It is an explanatory diagram of a method for manufacturing a component with a heat dissipation structure according to the present invention, and is a diagram showing chip-to-chip bonding.

[0064] Figure 6 This is an explanatory diagram including the structure of a general cooling device. DETAILED DESCRIPTION

[0065] Embodiments of the present invention will be described below, but the present invention is not limited to these embodiments.

[0066] As described above, it is required to develop a simple method for manufacturing an integrated circuit that has high thermal conductivity and does not cause damage thereto.

[0067] Therefore, the inventors of the present invention have repeatedly studied the above-mentioned problems and found that by using a heat sink structure of an integrated circuit using diamond grown on a silicon substrate and a method for manufacturing the same, a simple method for manufacturing the heat sink having high thermal conductivity and causing no damage to the integrated circuit can be realized, thereby completing the present invention.

[0068] (First embodiment)

[0069] The following side reference Figure 1 The component with a heat sink structure according to the first embodiment of the present invention will be described.

[0070] (Components with heat sink structure)

[0071] Figure 1 An explanatory diagram showing a component with a heat sink structure according to the present invention.

[0072] like Figure 1 As shown, the component with a heat sink structure 34 of the present invention includes: a substrate component 31 on which an integrated circuit portion 10 is formed, and a heat sink structure portion 9 formed on the integrated circuit portion 10 .

[0073] (Substrate parts)

[0074] The substrate member 31 is composed of the substrate 5 and the integrated circuit portion 10 formed on the substrate 5 .

[0075] The substrate 5 is an integrated circuit supporting substrate such as a silicon substrate, a laminate, or a PCB.

[0076] For example, the substrate member 31 is composed of a 300 mmφ silicon substrate and an integrated circuit such as a CPU formed on the silicon substrate.

[0077] (Integrated Circuit Department)

[0078] The integrated circuit unit 10 is composed of a core (Core) 3 such as a CPU and Cash / HBM 4 - 1 and 4 - 2 .

[0079] Cash / HBM 4-2 is stacked and formed on Cash / HBM 4-1, and is provided to protrude from the portion only of the core 3. Thus, the integrated circuit portion 10 is formed into a concavo-convex shape.

[0080] (Radiator structure)

[0081] The heat sink structure portion 9 is a silicon substrate 8 on which a diamond layer 6 is formed, and a convex-concave shape that fits into the concave-convex shape of the integrated circuit portion 10 is formed on the silicon substrate 8 .

[0082] Depend on Figure 1It can be seen that a through hole is formed in the silicon substrate 8 and the diamond layer 6 is in contact with the Cash / HBM 4-2. In other words, the silicon substrate 8 is processed in a hollowed-out manner.

[0083] In the component with heat sink structure 34 , the convex-concave shape of the heat sink structure portion 9 is fitted into the concave-convex shape of the integrated circuit portion 10 , and the heat sink structure portion 9 is fitted into the substrate member 31 .

[0084] (Diamond layer)

[0085] Various synthesis methods are known for the diamond layer 6. For semiconductor substrate applications, there is a CVD (Chemical Vapor Deposition) method using microwave plasma or hot filament, etc. Among them, the hot filament method is preferred because it is applicable to large-diameter substrates.

[0086] The so-called hot filament method is a method in which a substrate is placed in a reduced-pressure reaction vessel, and while methane and hydrogen are introduced as gases, an electric current is applied to a tungsten or titanium filament disposed on the substrate to generate high heat, thereby dispersing and activating the gas to grow diamond.

[0087] (Method for manufacturing component with heat sink structure)

[0088] Next, refer to Figure 2 Next, a method for manufacturing a component with a heat sink structure according to a first embodiment of the present invention will be described.

[0089] Figure 2 An explanatory diagram showing a method for manufacturing a component with a heat sink structure according to the present invention.

[0090] like Figure 2 As shown, the method for manufacturing a component with a heat sink structure of the present invention comprises: a substrate component preparation step, a diamond layer formation silicon substrate preparation step, a convex-concave shape formation step, and a heat sink structure formation step.

[0091] (Substrate component preparation process)

[0092] This is a step of preparing the substrate member 31 having the concavo-convex shape on which the integrated circuit portion 10 is formed.

[0093] For example, the preparation can be performed by forming an integrated circuit on a silicon substrate using a common method such as photolithography.

[0094] (Diamond layer formation silicon substrate preparation process)

[0095] This is a step of preparing the silicon substrate 7 on which the diamond layer 6 is formed.

[0096] A diamond heterogeneous substrate grown on a silicon substrate by CVD method is prepared.

[0097] The silicon substrate 7 on which the diamond layer 6 is formed is a diamond layer-formed silicon substrate 32 .

[0098] (Concave and convex shape forming process)

[0099] This is a step of forming a concave-convex shape that fits into the concave-convex shape of the integrated circuit portion 10 on the silicon substrate 7. The silicon substrate 7 is processed into a silicon substrate 8.

[0100] For example, in the convex-concave shape forming step, the convex-concave shape is formed by removing at least a portion of the silicon substrate 7 in accordance with the convex-concave shape of the integrated circuit portion 10 .

[0101] First, the silicon substrate 7 is thinned (determined based on the step height of the integrated circuit), and silicon is removed by photolithography in accordance with the shape of the integrated circuit.

[0102] The silicon substrate 8 after the diamond layer 6 is formed and processed is formed into a convex-concave shape to form a substrate 33 .

[0103] (Heat sink structure forming process)

[0104] This is a step of fitting the convex-concave shape of the silicon substrate 8 into the concave-convex shape of the integrated circuit portion 10 and bonding them together to form the heat sink structure portion 9 composed of the diamond layer 6 and the silicon substrate 8 on the substrate member 31 .

[0105] At this time, for example, the surface of the silicon substrate 8 may be activated by plasma, or the bonding may be performed using an adhesive, for example.

[0106] Figure 3 It is an explanatory diagram of a method for manufacturing a component with a heat sink structure according to the present invention, and is a diagram showing wafer-to-wafer bonding.

[0107] like Figure 3 As shown, the heat sink structure 9 is a wafer, and the substrate member 31 is a wafer having an integrated circuit portion, and the wafers are bonded to each other.

[0108] (Second embodiment)

[0109] A component with a heat sink structure according to a second embodiment of the present invention will be described below.

[0110] The heat sink component according to the second embodiment of the present invention has the same configuration as the first embodiment except that the heat sink structure portion 9 has a concave-convex shape formed on the diamond layer 6 to fit into the integrated circuit portion 10 .

[0111] In addition, the method for manufacturing a component with a heat sink structure according to the second embodiment of the present invention has the same structure as the first embodiment except for the following differences: the convex-concave shape forming step is a step of forming a convex-concave shape on the diamond layer that is embedded in the concave-convex shape of the integrated circuit part, and the step of forming the heat sink structure part is a step of embedding and bonding the convex-concave shape of the diamond layer to the concave-convex shape of the integrated circuit part, removing the surface silicon substrate, and forming a heat sink structure part consisting only of the diamond layer on the substrate part.

[0112] In addition, the silicon substrate can be removed by etching, grinding, or polishing.

[0113] (Third Embodiment)

[0114] The following describes a method for manufacturing a component with a heat sink structure according to a third embodiment of the present invention.

[0115] Figure 4 It is an explanatory diagram of a method for manufacturing a component with a heat sink structure according to a third embodiment of the present invention, and is a diagram showing bonding of a chip to a wafer.

[0116] like Figure 4 As shown, the heat sink structure part 9 is a chip, and the substrate component 31 is a wafer having an integrated circuit part, and the chip and the wafer are bonded together.

[0117] The method for manufacturing a component with a heat sink structure according to the third embodiment of the present invention has the same configuration as that of the first embodiment except that the chip is bonded to the wafer.

[0118] The first embodiment is an example of wafer-to-wafer, but it can also be chip-to-wafer. Although the integrated circuit is in the shape of a wafer, the diamond bonded to it is different from the first embodiment. The following method is used: bare chips (chips) are prepared in advance as a cooling device, and they are arranged and bonded on the integrated circuit (the bonding method can be the surface activation of the diamond bare chip or the bonding material). In this case, by thinning the silicon substrate on which the diamond is grown in advance, efficient heat dissipation can be achieved.

[0119] In this case, it is possible to arbitrarily select which surface, the diamond surface or the silicon surface, is to be bonded to the integrated circuit.

[0120] The method for manufacturing a component with a heat sink structure according to the third embodiment of the present invention further includes the step of cutting the silicon substrate 8 on which the diamond layer 6 is formed into small pieces to form diamond chips 35 .

[0121] In the process of forming a heat sink structure 9 on a substrate component 31 by fitting and bonding the convex-concave shape of the diamond layer 6 or the silicon substrate 8 to the concave-concave shape of the integrated circuit portion 10, the diamond chips 35 are arranged and the heat sink structure 9 is bonded to the substrate component 31 in such a manner that the convex-concave shape of the diamond layer 6 or the silicon substrate 8 fits into the concave-convex shape of the integrated circuit portion 10.

[0122] Thus, the chip-to-wafer bonding substrate 36 is manufactured.

[0123] Furthermore, after the process of forming the heat sink structure part 9 on the substrate part 31 by fitting and bonding the convex and concave shapes of the diamond layer 6 or the silicon substrate 8 to the concave and convex shapes of the integrated circuit part 10, it is preferably provided with the following steps: attaching another silicon substrate on which a diamond layer has been grown in such a manner that the silicon substrate is arranged on the surface side and covers all the diamond chips arranged on the substrate part, and removing the silicon substrate.

[0124] In this way, a larger diamond substrate can be further bonded thereon to cover the entirety.

[0125] (Fourth Embodiment)

[0126] A method for manufacturing a component with a heat sink structure according to a fourth embodiment of the present invention will be described below.

[0127] Figure 5 This is a diagram for explaining a method for manufacturing a component with a heat sink structure according to the present invention, and is a diagram showing chip-to-chip bonding.

[0128] like Figure 5 As shown, the heat sink structure 9 is a chip, and the substrate component 31 is a chip, and the chips are bonded to each other.

[0129] The method for manufacturing a component with a heat sink structure according to the fourth embodiment of the present invention has the same configuration as that of the first embodiment except that chip-to-chip bonding is used.

[0130] The first embodiment is an example of wafer-to-wafer, and the third embodiment is an example of chip-to-wafer, but chip-to-chip may also be used.

[0131] This is a method in which an integrated circuit chip and a bare chip (chip) for a cooling device are prepared in advance, and the bare chips (chips) are arranged and bonded on the integrated circuit chip (the bonding method may be surface activation of the diamond bare chip or bonding material). In this case, efficient heat dissipation can also be achieved by thinning the silicon substrate on which diamonds have been grown in advance.

[0132] The method for manufacturing a component with a heat sink structure according to the fourth embodiment of the present invention further comprises the steps of cutting the silicon substrate 8 with the diamond layer 6 into small pieces to form diamond chips 35 and cutting the substrate component with the integrated circuit part into small pieces to form a chip 37 with an integrated circuit.

[0133] In the process of forming a heat sink structure 9 on a substrate component by fitting and bonding the convex-concave shape of the diamond layer 6 or the silicon substrate 8 to the concave-convex shape of the integrated circuit part, the diamond chips 35 are arranged and the heat sink structure 9 is bonded to the substrate component 31 in such a way that the convex-concave shape of the diamond layer 6 or the silicon substrate 8 fits into the concave-convex shape of the integrated circuit part.

[0134] In this way, the die-to-die bonding substrate 38 is produced.

[0135] Furthermore, after the process of forming the heat sink structure part 9 on the substrate part 31 by fitting and bonding the convex and concave shapes of the diamond layer 6 or the silicon substrate 8 to the concave and convex shapes of the integrated circuit part 10, it is preferably provided with the following steps: attaching another silicon substrate on which a diamond layer has been grown in such a manner that the silicon substrate is arranged on the surface side and covers all the diamond chips arranged on the substrate part, and removing the silicon substrate.

[0136] Example

[0137] Hereinafter, the present invention will be specifically described with reference to Examples, but the present invention is not limited to these Examples.

[0138] (Example 1)

[0139] A diamond layer was formed on a 300 mm φ silicon substrate using a hot filament method.

[0140] Diamond is microcrystalline and its thickness is 0.05mm.

[0141] Using such a silicon wafer, the silicon on the side opposite to the surface on which the diamond is formed is ground to be thinned. At this time, the outer peripheral portion of the silicon is left at its original thickness to enable photolithography.

[0142] Photolithography is performed to form a convex-concave structure.

[0143] It is bonded to the wafer with the integrated circuit to produce the heat sink structure.

[0144] (Example 2)

[0145] A diamond layer was formed on a 300 mm φ silicon substrate using a hot filament method.

[0146] Diamond is microcrystalline and its thickness is 0.05mm.

[0147] Such a silicon wafer is used and cut into appropriate sizes, the silicon on the side opposite to the surface on which the diamond is formed is ground to be thinned and chipped, and then a photolithography process is performed to form a convex-concave structure.

[0148] It is bonded to the wafer with the integrated circuit to produce the heat sink structure.

[0149] It can be seen from the performance evaluation test of the integrated circuit that even if a heat sink structure is produced, it will not cause damage to the integrated circuit, and the heat sink structure has high heat dissipation efficiency.

[0150] The present invention is not limited to the above-described embodiments. The above-described embodiments are illustrative, and any scheme having substantially the same structure and achieving the same function and effect as the technical concept described in the claims of the present invention is included in the technical scope of the present invention.

Claims

1. A component with a heat sink structure, comprising a substrate component and a heat sink structure portion, wherein the substrate component is formed with an integrated circuit portion, and the heat sink structure portion is formed on the integrated circuit portion, wherein the component with a heat sink structure is characterized in that: The integrated circuit portion is formed into a concave-convex shape, The heat sink structure is: a diamond layer is formed with a convex-concave shape that fits into the concave-convex shape of the integrated circuit part; or a silicon substrate is formed with a diamond layer, and a convex-concave shape is formed on the silicon substrate that fits into the concave-convex shape of the integrated circuit part, The convex-concave shape of the heat sink structure portion is fitted into the concave-convex shape of the integrated circuit portion, and the heat sink structure portion is bonded to the substrate member.

2. The component with a heat sink structure according to claim 1, characterized in that: The heat sink structure part is a wafer, the substrate component is a wafer having the integrated circuit part, and the component with the heat sink structure is formed by bonding the wafers to each other.

3. The component with a heat sink structure according to claim 1, characterized in that: The heat sink structure part is a chip, the substrate component is a wafer having the integrated circuit part, and the component with the heat sink structure is formed by bonding the chip and the wafer.

4. The component with a heat sink structure according to claim 1, characterized in that: The heat sink structure part is a chip, the substrate component is a chip, and the component with the heat sink structure is formed by bonding the chips to each other.

5. The component with a heat sink structure according to any one of claims 1 to 4, characterized in that: The diamond layer is a CVD diamond layer.

6. A method for manufacturing a component with a heat sink structure, characterized in that: It has the following processes: preparing a substrate member having an integrated circuit portion formed thereon and having a concavo-convex shape; preparing a silicon substrate on which a diamond layer is formed; forming a convex-concave shape fitting into the concave-convex shape of the integrated circuit portion on the diamond layer, or forming a convex-concave shape fitting into the concave-convex shape of the integrated circuit portion on the silicon substrate; and, After the convex-concave shape of the diamond layer is embedded and adhered to the concave-convex shape of the integrated circuit part, the silicon substrate on the surface is removed to form a heat sink structure part consisting only of the diamond layer on the substrate part, or the convex-concave shape of the silicon substrate is embedded and adhered to the concave-convex shape of the integrated circuit part to form a heat sink structure part consisting of the diamond layer and the silicon substrate.

7. The method for manufacturing a component with a heat sink structure according to claim 6, characterized in that: In the convex-concave shape forming step, the convex-concave shape is formed by removing at least a portion of the silicon substrate in accordance with the convex-concave shape of the integrated circuit portion.

8. The method for manufacturing a component with a heat sink structure according to claim 6 or 7, characterized in that: The method further comprises the steps of: cutting the silicon substrate on which the diamond layer is formed into small pieces to form diamond chips; In the step of forming the heat sink structure, the diamond chips are arranged and the heat sink structure is bonded to the substrate member so that the convex and concave shapes of the diamond layer or the silicon substrate fit into the concave and convex shapes of the integrated circuit portion.

9. The method for manufacturing a component with a heat sink structure according to claim 8, characterized in that: After the step of forming the heat sink structure, the following steps are also included: Attaching another silicon substrate on which a diamond layer is grown so that the silicon substrate is placed on the surface side and covers all the diamond chips arranged on the substrate member; and The silicon substrate is removed.

10. The method for manufacturing a component with a heat sink structure according to claim 6 or 7, characterized in that: It also has the following processes: cutting the silicon substrate having the diamond layer formed thereon into small pieces to form diamond chips; and, The substrate component with the integrated circuit part is cut into small pieces to form a chip with an integrated circuit. In the step of forming the heat sink structure, after arranging the chips with integrated circuits, the diamond chips are bonded so that the convex and concave shapes fit into the concave and convex shapes of the integrated circuit parts, thereby forming the heat sink structure on the substrate member.

11. The method for manufacturing a component with a heat sink structure according to claim 10, characterized in that: After the step of forming the heat sink structure, the following steps are further included: Attaching another silicon substrate on which a diamond layer is grown so that the silicon substrate is placed on the surface side and covers all the diamond chips arranged on the substrate member; and The silicon substrate is removed.

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