Plasma processing apparatus and method for controlling charge amount

Abstract

The plasma processing apparatus includes a plasma processing chamber, a substrate supporting portion, a ground frame, a power storage portion, a rectifying and smoothing portion, a power supply output connector, and a power receiving coil. The ground frame is grounded and surrounds the substrate support portion together with the plasma processing chamber. The power storage unit and the rectification smoothing unit are disposed in a space surrounded by the ground frame. The rectification smoothing part comprises a power supply input connector and a rectification circuit. The power supply input connector is provided to be accessible from the outside of the ground frame. The rectifier circuit includes a diode bridge connected between the power supply input connector and the power storage unit. The power supply output connector is connected to the power receiving coil and is detachable with respect to the power supply input connector.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to U.S. Provisional Patent Application No. 63 / 356,713, filed on June 29, 2022, and entitled “Plasma Processing Apparatus,” the entire contents of which are incorporated herein by reference. Technical Field

[0003] Exemplary embodiments of the present invention relate to a plasma processing apparatus and a method for controlling a stored amount of electricity. Background Art

[0004] A plasma processing device is used in plasma processing. The plasma processing device includes a chamber and a substrate support table (mounting table) arranged in the chamber. The substrate support table has a base (lower electrode) and an electrostatic chuck for holding the substrate. A temperature regulating element (such as a heater) for regulating the temperature of the substrate is provided inside the electrostatic chuck. In addition, a filter is provided between the temperature regulating element and the power supply for the temperature regulating element, and the filter can attenuate or block the high-frequency noise entering from the high-frequency electrode and / or other electrical components in the chamber to the power supply line and / or signal line and other lines. The following patent document 1 describes such a plasma processing device.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2015-173027 Summary of the invention

[0008] Technical problem to be solved by the invention

[0009] An exemplary embodiment of the present invention provides a technique for controlling the amount of electricity stored in a power storage unit of a plasma processing apparatus.

[0010] Means for solving technical problems

[0011] In an exemplary embodiment, a plasma processing device is provided. The plasma processing device includes a plasma processing chamber, a substrate support, a high-frequency power supply, an electrode or an antenna, an electric power consumption component, a ground frame, a power storage unit, a rectifier and smoothing unit, a power supply output connector, and a power receiving coil. The substrate support unit is arranged in the plasma processing chamber. The high-frequency power supply can generate high-frequency electric power. The electrode or antenna is electrically connected to the high-frequency power supply and can receive high-frequency electric power to generate plasma from gas in the plasma processing chamber. The electric power consumption component is arranged in the plasma processing chamber or in the substrate support unit. The ground frame is grounded and surrounds the substrate support unit together with the plasma processing chamber. The power storage unit is arranged in a space surrounded by the ground frame and is electrically connected to the electric power consumption component. The rectifier and smoothing unit is arranged in a space surrounded by the ground frame. The rectifier and smoothing unit includes a power supply input connector and a rectifier circuit. The power supply input connector includes a first power supply input terminal and a second power supply input terminal, which are arranged to be accessible from the outside of the ground frame. The rectifier circuit includes a diode bridge connected between the power supply input connector and the power storage unit. The power supply output connector includes a first power supply output terminal and a second power supply output terminal that can be electrically connected to the first power supply input terminal and the second power supply input terminal, and is detachable relative to the power supply input connector. The power receiving coil is arranged outside the ground frame, electrically connected to the power supply output connector, and can receive electric power from the power feeding coil through electromagnetic induction coupling.

[0012] Effects of the Invention

[0013] According to an exemplary embodiment, a technology capable of controlling the amount of power stored in a power storage unit of a plasma processing apparatus can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a diagram for explaining a configuration example of a plasma processing system.

[0015] Figure 2 This is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0016] Figure 3 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment.

[0017] Figure 4 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment.

[0018] Figure 5 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0019] Figure 6 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0020] Figure 7 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0021] Figure 8 FIG. 1 is a diagram showing a power feeding unit according to an exemplary embodiment.

[0022] Fig. 9 It is a diagram showing a power feeding coil unit and a power receiving coil unit according to an exemplary embodiment.

[0023] Fig.10 It is a diagram showing a power feeding coil unit and a power receiving coil unit according to an exemplary embodiment.

[0024] Fig.11 It is a diagram showing a power feeding coil unit and a power receiving coil unit according to an exemplary embodiment.

[0025] Fig.12 It is a diagram showing the impedance characteristics of the power receiving coil unit according to an exemplary embodiment.

[0026] Fig.13 is a diagram showing an RF filter according to an exemplary embodiment.

[0027] Fig.14 FIG. 1 is a diagram showing a rectifying and smoothing unit according to an exemplary embodiment.

[0028] Fig.15 is a diagram showing an RF filter according to an exemplary embodiment.

[0029] Fig.16 FIG. 1 is a diagram showing a communication unit of a power feeding unit and a communication unit of a rectifying and smoothing unit according to an exemplary embodiment.

[0030] Fig.17 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0031] Fig.18 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0032] Fig.19 FIG. 1 is a diagram showing a communication section of a power feeding section and a communication section of a rectifying and smoothing section according to another exemplary embodiment.

[0033] Fig. 20 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0034] Fig.21 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0035] Fig. 22 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0036] Fig.23 (a) and Fig.23 (b) are diagrams showing a power storage unit according to an exemplary embodiment.

[0037] Fig.24 is a diagram showing a voltage controlled converter according to an exemplary embodiment.

[0038] Fig.25 FIG. 1 is a diagram showing a constant voltage control unit according to an exemplary embodiment.

[0039] Fig.26 It is a diagram showing a constant voltage control unit according to another exemplary embodiment.

[0040] Fig. 27 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0041] Fig.28 It is a diagram for explaining charging of a power storage unit of a plasma processing apparatus according to still another exemplary embodiment.

[0042] Fig.29 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0043] Fig.30 Yes means Fig.29 FIG. 1 is a diagram showing a state in which a rectifying and smoothing unit of a plasma processing device is connected to a power receiving coil unit.

[0044] Fig.31 Yes means Fig.29 FIG. 1 is a diagram showing a state in which a rectifying and smoothing unit of a plasma processing apparatus is connected to a DC regulated power supply.

[0045] Fig.32 (a) is a timing chart of an example of the voltage of the power storage unit, Fig.32 (b) is a timing chart showing an example of the current supplied to the power storage unit.

[0046] Fig.33 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0047] Fig.34 This is a diagram showing a state in which a rectifying and smoothing unit and a power receiving coil unit of a plasma processing apparatus according to still another exemplary embodiment are connected.

[0048] Fig.35 This is a diagram showing a state in which a rectifying and smoothing unit of a plasma processing apparatus according to still another exemplary embodiment is connected to a DC regulated power supply.

[0049] Fig.36 It is a diagram showing a state in which a rectifying and smoothing section of a plasma processing apparatus according to still another exemplary embodiment is connected to a discharge unit.

[0050] Fig.37 This is a timing chart showing an example of the voltage of the power storage unit.

[0051] Fig.38 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0052] Fig.39 FIG. 1 is a diagram showing a configuration related to discharge of a power storage unit in a plasma processing apparatus according to still another exemplary embodiment.

[0053] Fig.40 FIG. 1 is a diagram showing a configuration related to discharge of a power storage unit in a plasma processing apparatus according to still another exemplary embodiment.

[0054] Fig.41 This is a timing chart showing an example of the voltage of the power storage unit. DETAILED DESCRIPTION

[0055] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, in each of the drawings, the same reference numerals are given to the same or corresponding parts.

[0056] Figure 1 : is a diagram for illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generating portion 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has: at least one gas supply port for supplying at least one processing gas to the plasma processing space; and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to the gas supply portion 20 described later, and the gas exhaust port is connected to the exhaust system 40 described later. The substrate support portion 11 is arranged in the plasma processing space and has a substrate supporting surface for supporting a substrate.

[0057] The plasma generating unit 12 is capable of generating plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP: Capacitively Coupled Plasma), an inductively coupled plasma (ICP: Inductively Coupled Plasma), an ECR plasma (Electron-Cyclotron-Resonance Plasma: Electron Cyclotron Resonance Plasma), a helicon wave excited plasma (HWP: Helicon Wave Plasma) or a surface wave plasma (SWP: Surface Wave Plasma), etc. In addition, various types of plasma generating units including an AC (Alternating Current: Alternating Current) plasma generating unit and a DC (Direct Current: Direct Current) plasma generating unit may be used. In one embodiment, the AC signal (AC electric power) used in the AC plasma generating unit has a frequency in the range of 100kHz to 10GHz. Therefore, the AC signal includes an RF (Radio Frequency: Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100kHz to 150MHz.

[0058] The control unit 2 is capable of processing computer-executable commands, which are used to cause the plasma processing device 1 to perform the various steps described in the present invention. The control unit 2 is capable of controlling the various elements of the plasma processing device 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing device 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 is capable of reading a program from the storage unit 2a2 and performing various control actions by executing the read program. The program may be pre-stored in the storage unit 2a2 or acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read and executed from the storage unit 2a2 by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0059] Next, a configuration example of a capacitive coupling type plasma processing apparatus will be described as an example of the plasma processing apparatus 1 . Figure 2 This is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0060] A capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is capable of introducing at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0061] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has: a central area 111a for supporting a substrate W; and an annular area 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular area 111b of the main body 111 surrounds the central area 111a of the main body 111 when viewed from above. The substrate W is arranged on the central area 111a of the main body 111, and the ring assembly 112 is arranged on the annular area 111b of the main body 111 in a manner surrounding the substrate W on the central area 111a of the main body 111. Therefore, the central area 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular area 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0062] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode (also called an adsorption electrode, a chuck electrode, or a clamping electrode) 1111b arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component, may also have an annular area 111b. In this case, the ring assembly 112 may be arranged on the annular electrostatic chuck or the annular insulating component, or may be arranged on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF / DC electrode coupled to the RF power supply 31 and / or DC power supply 32 described later may be arranged in the ceramic component 1111a. In this case, at least one RF / DC electrode can function as a lower electrode. In the case where a bias RF signal and / or DC signal described later is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. In addition, the conductive component of the base 1110 and at least one RF / DC electrode may function as a plurality of lower electrodes. In addition, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0063] The ring assembly 112 includes one or more ring-shaped components. In one embodiment, the one or more ring-shaped components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0064] In addition, the substrate support portion 11 may include a temperature regulating module for regulating at least one of the electrostatic chuck 1111, the ring assembly 112 and the substrate to a target temperature. The temperature regulating module may include a heater, a heat transfer medium, a flow path 1110a or a combination thereof. A heat transfer fluid such as salt water or gas may flow in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic part 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may include a heat transfer gas supply portion for supplying a heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0065] The shower head 13 can introduce at least one processing gas from the gas supply part 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a can be introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes at least one upper electrode. In addition, the gas introduction part may include, in addition to the shower head 13, one or more side gas injection parts (SGI: Side Gas Injector) installed in one or more openings formed on the side wall 10a.

[0066] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is capable of supplying at least one process gas from the gas source 21 corresponding to each other to the shower head 13 via the flow controller 22 corresponding to each other. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Moreover, the gas supply unit 20 may include at least one flow modulation device for modulating or pulsing the flow of at least one process gas.

[0067] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 can supply at least one RF signal (RF electric power) to at least one lower electrode and / or at least one upper electrode. Thus, plasma can be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, and ion components in the formed plasma can be introduced (attracted) to the substrate W.

[0068] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and can generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a can generate a plurality of source RF signals with different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0069] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is capable of generating a bias RF signal (bias RF electric power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF generating unit 31b may be capable of generating a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0070] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and is capable of generating a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and is capable of generating a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0071] In various embodiments, the first DC signal and the second DC signal may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse may have a pulse waveform in the shape of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and at least one lower electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. In the case where the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, the first DC generator 32a and the second DC generator 32b may be provided in addition to the RF power supply 31, or the first DC generator 32a may be provided instead of the second RF generator 31b.

[0072] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s can be adjusted by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0073] In addition, in a capacitive coupling type plasma processing apparatus 1, an upper electrode is arranged in such a manner that a plasma processing space is located between the upper electrode and the substrate support portion 11. A high-frequency power source such as the first RF generating portion 31a is electrically connected to the upper electrode or the lower electrode in the substrate support portion 11. In the case where the plasma processing apparatus 1 is an inductive coupling type plasma processing apparatus, an antenna is arranged in such a manner that a plasma processing space is located between the antenna and the substrate support portion 11. A high-frequency power source such as the first RF generating portion 31a is electrically connected to the antenna. In the case where the plasma processing apparatus 1 is a plasma processing apparatus that generates plasma using surface waves such as microwaves, the antenna is arranged in such a manner that a plasma processing space is located between the antenna and the substrate support portion 11. A high-frequency power source such as the first RF generating portion 31a is electrically connected to the antenna via a waveguide.

[0074] Various exemplary embodiments of plasma processing apparatuses are described below. Each of the plasma processing apparatuses described below can supply power to at least one power consuming component in the chamber 10 by wireless power supply (electromagnetic induction coupling) and can have the same structure as the plasma processing apparatus 1 .

[0075] Figure 3 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment. Figure 3 The plasma processing apparatus 100A shown in FIG. 1 includes at least one high frequency power source 300, a power receiving coil unit 140, a power storage unit 160, and at least one power consumption component 240 (see FIG. 1 ). Fig.25 and Fig.26 The plasma processing apparatus 100A may further include a power feeding unit 120 , a power feeding coil unit 130 , a rectifying and smoothing unit 150 , a constant voltage control unit 180 (an example of a voltage control unit), a ground frame 110 , and a matching unit 301 .

[0076] At least one high frequency power source 300 includes a first RF generating section 31a and / or a second RF generating section 31b. At least one high frequency power source 300 is electrically connected to the substrate supporting section 11 via a matching section 301. The matching section 301 includes at least one impedance matching circuit.

[0077] The ground frame 110 includes the chamber 10 and is electrically grounded. The ground frame 110 electrically separates the space 110h (RF-Hot space) inside it from the space 110a (atmospheric space) outside. The ground frame 110 surrounds the substrate support portion 11 arranged in the space 110h. In the plasma processing device 100A, the rectification and smoothing portion 150, the power storage portion 160 and the constant voltage control portion 180 are arranged in the space 110h. In addition, in the plasma processing device 100A, the feeding portion 120, the feeding coil portion 130 and the receiving coil portion 140 are arranged in the space 110a. In addition, the space 110h includes a decompression space (vacuum space) and a non-decompression space (non-vacuum space). The decompression space is the space inside the chamber 10, and the non-decompression space is the space outside the chamber 10. The substrate support portion 11 and the substrate W are arranged in the decompression space. The rectifying and smoothing unit 150 , the power storage unit 160 , and the constant voltage control unit 180 are arranged in the non-decompression space.

[0078] The equipment arranged in the space 110a, namely the feeding unit 120, the feeding coil unit 130 and the receiving coil unit 140, etc., is covered by a metal shell formed of a metal such as aluminum, and the metal shell is grounded. Thus, it is possible to suppress the leakage of high-frequency noise caused by high-frequency electric power such as the first RF signal (source RF signal) and / or the second RF signal (bias RF signal). The metal shell and each power supply line have an insulation distance between them. In addition, in the following description, the high-frequency electric power such as the first RF signal and / or the second RF signal, that is, the high-frequency electric power transmitted to the feeding unit 120, is sometimes referred to as high-frequency noise, common mode noise or conductive noise.

[0079] The power feeding unit 120 is electrically connected between the AC power source 400 (e.g., industrial frequency AC power source) and the power feeding coil unit 130. The power feeding unit 120 can receive the frequency of the AC power from the AC power source 400, convert the frequency of the AC power into a transmission frequency, and thereby generate AC power having the transmission frequency, that is, transmission AC power.

[0080] The feeding coil unit 130 includes a feeding coil 131 (see Fig. 9 The power feeding coil 131 is electrically connected to the power feeding unit 120 . The power feeding coil 131 can receive the transmission AC power from the power feeding unit 120 and wirelessly transmit the transmission AC power to the power receiving coil 141 .

[0081] The power receiving coil unit 140 includes a power receiving coil 141 (see Fig. 9). The receiving coil 141 is electromagnetically inductively coupled to the feeding coil 131. Electromagnetic inductive coupling includes magnetic field coupling and electric field coupling. In addition, magnetic field coupling includes magnetic field resonance (also called magnetic resonance). The distance between the receiving coil 141 and the feeding coil 131 is set to be able to suppress common mode noise (conductive noise). In addition, the distance between the receiving coil 141 and the feeding coil 131 is set to be a distance that can supply power. The distance between the receiving coil 141 and the feeding coil 131 is set so that the attenuation of high-frequency electric power (i.e., high-frequency noise) between the receiving coil 141 and the feeding coil 131 becomes less than a threshold value, and the electric power from the feeding coil 131 can be received in the receiving coil 141. The threshold value of the attenuation amount is set to a value that can fully prevent damage or malfunction of the feeding unit 120. The threshold value of the attenuation amount is, for example, -20 dB. The transmission AC power received by the receiving coil unit 140 is output to the rectification and smoothing unit 150.

[0082] The rectifying and smoothing unit 150 is electrically connected between the power receiving coil unit 140 and the power storage unit 160. The rectifying and smoothing unit 150 generates DC power by performing full-wave rectification and smoothing on the AC power transmitted from the power receiving coil unit 140. The DC power generated by the rectifying and smoothing unit 150 is stored in the power storage unit 160. The power storage unit 160 is electrically connected between the rectifying and smoothing unit 150 and the constant voltage control unit 180. In addition, the rectifying and smoothing unit 150 may generate DC power by performing half-wave rectification and smoothing on the AC power transmitted from the power receiving coil unit 140.

[0083] The rectifying and smoothing unit 150 and the feeding unit 120 are electrically connected to each other via the signal line 1250. The rectifying and smoothing unit 150 sends an instruction signal to the feeding unit 120 via the signal line 1250. The instruction signal is a signal for instructing the feeding unit 120 to supply the transmitted AC power or stop the supply of the transmitted AC power. The instruction signal may include a state signal, an abnormality detection signal, and a cooling control signal for the feeding coil unit 130 and the receiving coil unit 140. The state signal is a voltage detector 155v (refer to Fig.14 ) and current detector 155i (refer to Fig.14 ) The value of the voltage, current, electric power and / or phase detected by the power supply 120. The abnormality detection signal is a signal for transmitting the failure of the rectification and smoothing unit 150 and / or the occurrence of temperature abnormality to the power supply 120. The cooling control signal is used to control the cooling mechanism provided in the power supply coil unit 130 and the power receiving coil unit 140. The cooling control signal controls the speed of the fan in the case of air cooling, for example. In addition, in the case of liquid cooling, the flow rate and / or temperature of the refrigerant are controlled.

[0084] The constant voltage control unit 180 applies a voltage to at least the power consumption component 240 using the electric power stored in the power storage unit 160. The constant voltage control unit 180 can control the application of the voltage to at least the power consumption component 240 and the stop thereof.

[0085] In the plasma processing apparatus 100A, the power receiving coil 141 can function as a filter for high-frequency noise caused by high-frequency electric power such as the first RF signal and / or the second RF signal, thereby suppressing the high-frequency noise from being transmitted to the power supply outside the plasma processing apparatus.

[0086] Reference Figure 4 . Figure 4 FIG. 1 is a diagram schematically showing another exemplary embodiment of a plasma processing apparatus. Figure 4 The plasma processing apparatus 100B shown will be described from the viewpoint of differences from the plasma processing apparatus 100A.

[0087] The plasma processing apparatus 100B further includes a voltage control converter 170. The voltage control converter 170 is a DC-DC converter, and is connected between the power storage unit 160 and the constant voltage control unit 180. The voltage control converter 170 can be configured to input a constant output voltage to the constant voltage control unit 180 even when a voltage fluctuation occurs in the power storage unit 160. In addition, the voltage fluctuation in the power storage unit 160 may occur as a voltage drop corresponding to the stored electric power, for example, when the power storage unit 160 is formed of an electric double layer.

[0088] Reference Figure 5 . Figure 5 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Figure 5 The plasma processing apparatus 100C shown will be described from the viewpoint of differences from the plasma processing apparatus 100B.

[0089] The plasma processing apparatus 100C further includes an RF filter 190. The RF filter 190 is connected between the rectifying and smoothing section 150 and the feeding section 120. The RF filter 190 constitutes a portion of the signal line 1250. The RF filter 190 has a characteristic of suppressing the transmission of high-frequency electric power (high-frequency noise) via the signal line 1250. That is, the RF filter 190 includes a low-pass filter having a high impedance to high-frequency noise (conductive noise) but having a characteristic of passing an indication signal of a relatively low frequency.

[0090] In the plasma processing device 100C, the power storage unit 160, the voltage control converter 170 and the constant voltage control unit 180 are formed as one body (integrated). That is, the power storage unit 160, the voltage control converter 170 and the constant voltage control unit 180 are all arranged in a single metal shell, or formed on a single circuit board. As a result, the lengths of a pair of power supply lines (positive line and negative line) connecting the power storage unit 160 and the voltage control converter 170 to each other are shortened. In addition, the lengths of a pair of power supply lines (positive line and negative line) connecting the power storage unit 160 and the voltage control converter 170 to each other can be made equal to each other. In addition, the lengths of a pair of power supply lines (positive line and negative line) connecting the voltage control converter 170 and the constant voltage control unit 180 to each other can be shortened. In addition, the lengths of a pair of power supply lines connecting the voltage control converter 170 and the constant voltage control unit 180 to each other can be made equal to each other. Therefore, it is possible to suppress malfunction and damage of the device caused by normal mode noise (potential difference between the positive line and the negative line). Furthermore, when other metal bodies are provided around the shell in the chamber 10 for shielding electromagnetic fields, the single shell may not be made of metal.

[0091] Reference Figure 6 . Figure 6 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Figure 6 The plasma processing apparatus 100D shown will be described from the viewpoint of differences from the plasma processing apparatus 100C.

[0092] The plasma processing apparatus 100D does not include the RF filter 190. In the plasma processing apparatus 100D, the rectifying and smoothing section 150 includes a communication section 151 as a wireless section. The communication section 151 is arranged in the non-decompression space. In addition, the feeding section 120 includes a communication section 121 as a wireless section. The communication section 121 is arranged in the space 110a. The above-mentioned instruction signal is transmitted between the rectifying and smoothing section 150 and the feeding section 120 using the communication section 151 and the communication section 121. The details of the communication section 121 and the communication section 151 will be described later.

[0093] Reference Figure 7 . Figure 7 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Figure 7 The plasma processing apparatus 100E shown will be described from the viewpoint of differences from the plasma processing apparatus 100D.

[0094] The plasma processing apparatus 100E further includes an RF filter 200. The RF filter 200 is connected between the power receiving coil unit 140 and the rectifying and smoothing unit 150. The RF filter 200 has a characteristic of reducing or blocking high frequency noise transmitted from the power receiving coil unit 140 to the power feeding coil 131 and the power feeding unit 120. The details of the RF filter 200 will be described later.

[0095] The structures of various components for wireless power supply in the plasma processing apparatus according to various exemplary embodiments will be described in detail below.

[0096] [Structure of the power feeding unit]

[0097] Figure 8 1 is a diagram showing a feeder according to an exemplary embodiment. As described above, the feeder 120 can receive the frequency of the AC power from the AC power source 400 and convert the frequency of the AC power into a transmission frequency, thereby generating a transmission AC power having the transmission frequency.

[0098] In one embodiment, the feeder 120 includes a control unit 122, a rectifying and smoothing unit 123, and an inverter 124. The control unit 122 is composed of a processor such as a CPU or a programmable logic device such as an FPGA (Field-Programmable Gate Array).

[0099] The rectifying and smoothing unit 123 includes a rectifying circuit and a smoothing circuit. The rectifying circuit includes, for example, a diode bridge. The smoothing circuit includes, for example, a line capacitor. The rectifying and smoothing unit 123 generates a DC power by performing full-wave rectification and smoothing on the AC power from the AC power supply 400. In addition, the rectifying and smoothing unit 123 may also generate a DC power by performing half-wave rectification and smoothing on the AC power from the AC power supply 400.

[0100] The inverter 124 generates a transmission AC power having a transmission frequency from the DC power output by the rectifying and smoothing section 123. The inverter 124 is, for example, a full-bridge inverter including a plurality of triacs or a plurality of switching elements (e.g., FETs). The inverter 124 generates the transmission AC power by ON / OFF control of the plurality of triacs or the plurality of switching elements by the control section 122. The transmission AC power output from the inverter 124 is output to the feeding coil section 130.

[0101] The feeding section 120 may further include a voltage detector 125v, a current detector 125i, a voltage detector 126v, and a current detector 126i. The voltage detector 125v detects a voltage value between a pair of power supply lines connecting the rectifying and smoothing section 123 and the inverter 124 to each other. The current detector 125i detects a current value between the rectifying and smoothing section 123 and the inverter 124. The voltage detector 126v detects a voltage value between a pair of power supply lines connecting the inverter 124 and the feeding coil section 130 to each other. The current detector 126i detects a current value between the inverter 124 and the feeding coil section 130. The voltage value detected by the voltage detector 125v, the current value detected by the current detector 125i, the voltage value detected by the voltage detector 126v, and the current value detected by the current detector 126i are notified to the control section 122.

[0102] The feeding unit 120 includes the above-mentioned communication unit 121. The communication unit 121 includes a driver 121d, a transmitter 121tx, and a receiver 121rx. The transmitter 121tx is a transmitter of a wireless signal or a transmitter of an optical signal. The receiver 121rx is a receiver of a wireless signal or a receiver of an optical signal. The communication unit 121 drives the transmitter 121tx through the driver 121d, and outputs the signal from the control unit 122 from the transmitter 121tx as a wireless signal or an optical signal. The signal output from the transmitter 121tx is transmitted to the communication unit 151 (see FIG. 151 ) described later. Fig.14 ) is received. In addition, the communication unit 121 receives a signal such as the above-mentioned instruction signal from the communication unit 151 through the receiver 121rx, and inputs the received signal to the control unit 122 via the driver 121d. The control unit 122 controls the inverter 124 in accordance with the instruction signal received from the communication unit 151 via the communication unit 121, the voltage value detected by the voltage detector 125v, the current value detected by the current detector 125i, the voltage value detected by the voltage detector 126v, and the current value detected by the current detector 126i, thereby switching the output and stopping of the transmission of AC power.

[0103] [Power feeding coil section and power receiving coil section]

[0104] Reference Figures 9 to 11 . Figures 9 to 11 Each of the figures shows a power feeding coil unit and a power receiving coil unit according to an exemplary embodiment. Fig. 9As shown, the feeding coil unit 130 may include a resonant capacitor 132a and a resonant capacitor 132b in addition to the feeding coil 131. The resonant capacitor 132a is connected between one of a pair of power supply lines that connect the feeding unit 120 and the feeding coil unit 130 to each other and one end of the feeding coil 131. The resonant capacitor 132b is connected between the other of the pair of power supply lines and the other end of the feeding coil 131. The feeding coil 131, the resonant capacitor 132a and the resonant capacitor 132b constitute a resonant circuit for the transmission frequency. That is, the feeding coil 131, the resonant capacitor 132a and the resonant capacitor 132b have a resonant frequency that is substantially consistent with the transmission frequency. In addition, the feeding coil unit 130 may not include any of the resonant capacitor 132a and the resonant capacitor 132b.

[0105] like Fig.10 and Fig.11 As shown, the feeding coil unit 130 may further include a metal shell 130g. The metal shell 130g has an open end and is grounded. The feeding coil 131 is arranged in the metal shell 130g in a manner to ensure the insulation distance. The feeding coil unit 130 may further include a heat sink 134, a ferrite component 135 and a thermally conductive sheet 136. The heat sink 134 is arranged in the metal shell 130g and supported by the metal shell 130g. The ferrite component 135 is arranged on the heat sink 134. The thermally conductive sheet 136 is arranged on the ferrite component 135. The feeding coil 131 is arranged on the thermally conductive sheet 136 and is opposite to the receiving coil 141 across the open end of the metal shell 130g. As shown in FIG. Fig.11 As shown, a resonant capacitor 132a and a resonant capacitor 132b may also be housed in the metal housing 130g.

[0106] like Fig. 9 As shown, the power receiving coil unit 140 includes a power receiving coil 141. The power receiving coil 141 can be electromagnetically inductively coupled with the power feeding coil 131. In addition to the power receiving coil 141, the power receiving coil unit 140 may include a resonant capacitor 142a and a resonant capacitor 142b. The resonant capacitor 142a is connected between one of a pair of power supply lines extending from the power receiving coil unit 140 and one end of the power receiving coil 141. The resonant capacitor 142b is connected between the other of the pair of power supply lines and the other end of the power receiving coil 141. The power receiving coil 141, the resonant capacitor 142a, and the resonant capacitor 142b constitute a resonant circuit for the transmission frequency. That is, the power receiving coil 141, the resonant capacitor 142a, and the resonant capacitor 142b have a resonant frequency that is substantially consistent with the transmission frequency. In addition, the power receiving coil unit 140 may not include any of the resonant capacitor 142a and the resonant capacitor 142b.

[0107] like Fig.10 and Fig.11As shown, the power receiving coil unit 140 may further include a metal shell 140g. The metal shell 140g has an open end and is grounded. The power receiving coil 141 is arranged in the metal shell 140g in a manner to ensure the insulation distance. The power receiving coil unit 140 may further include a spacer 143, a heat sink 144, a ferrite component 145 and a thermally conductive sheet 146. The spacer 143 is arranged in the metal shell 140g and is supported by the metal shell 140g. The spacer 143 will be described later. The heat sink 144 is arranged on the spacer 143. The ferrite component 145 is arranged on the heat sink 144. The thermally conductive sheet 146 is arranged on the ferrite component 145. The power receiving coil 141 is arranged on the thermally conductive sheet 146, and is opposite to the power feeding coil 131 across the open end of the metal shell 140g. As shown in FIG. Fig.11 As shown, a resonant capacitor 142a and a resonant capacitor 142b may also be housed in the metal housing 140g.

[0108] The spacer 143 is formed of a dielectric and is provided between the power receiving coil 141 and the metal casing 140g (ground). The spacer 143 can provide a spatial parasitic capacitance between the power receiving coil 141 and the ground.

[0109] [Impedance characteristics of the power receiving coil]

[0110] Reference Fig.12 . Fig.12 It is a diagram showing the impedance characteristics of the power receiving coil unit according to an exemplary embodiment. Fig.12 140g represents the impedance characteristics of the power receiving coil unit 140 according to the thickness of the spacer 143. The thickness of the spacer 143 corresponds to the distance between the heat sink 144 and the metal housing 140g. Fig.12 As shown, the power receiving coil unit 140 can adjust the frequency f according to the thickness of the spacer 143. H and frequency f L Therefore, according to the power receiving coil unit 140, high impedance can be provided at the frequencies of two high-frequency electric powers used in the plasma processing device, such as the first RF signal and the second RF signal. In addition, high impedance can be obtained in the power receiving coil unit 140, so the loss of high-frequency electric power can be suppressed, and a high processing rate (for example, etching rate) can be obtained.

[0111] [RF filter 200]

[0112] Reference Fig.13 . Fig.13 FIG. 1 is a diagram showing an RF filter according to an exemplary embodiment. Fig.13As shown, the RF filter 200 is connected between the power receiving coil unit 140 and the rectifying and smoothing unit 150. The RF filter 200 includes an inductor 201a, an inductor 201b, a terminal capacitor 202a, and a terminal capacitor 202b. One end of the inductor 201a is connected to the resonant capacitor 142a, and the other end of the inductor 201a is connected to the rectifying and smoothing unit 150. One end of the inductor 201b is connected to the resonant capacitor 142b, and the other end of the inductor 201b is connected to the rectifying and smoothing unit 150. The terminal capacitor 202a is connected between one end of the inductor 201a and the ground. The terminal capacitor 202b is connected between one end of the inductor 201b and the ground. The inductor 201a and the terminal capacitor 202a form a low-pass filter. In addition, the inductor 201b and the terminal capacitor 202b form a low-pass filter. The RF filter 200 can provide high impedance at the frequencies of two high frequency electric powers used in a plasma processing device, such as the first RF signal and the second RF signal, thereby suppressing the loss of high frequency electric power and achieving a high processing rate (eg, etching rate).

[0113] [Rectifier and Smoothing Department]

[0114] Reference Fig.14 . Fig.14 1 is a diagram showing a rectifying and smoothing unit of an exemplary embodiment. In one embodiment, the rectifying and smoothing unit 150 includes a control unit 152, a rectifying circuit 153, and a smoothing circuit 154. The rectifying circuit 153 is connected between the power receiving coil unit 140 and the smoothing circuit 154. The smoothing circuit 154 is connected between the rectifying circuit 153 and the power storage unit 160. The control unit 152 is composed of a processor such as a CPU or a programmable logic device such as an FPGA (Field-Programmable Gate Array). In addition, the control unit 152 may be the same as the control unit 122 or different.

[0115] The rectifier circuit 153 outputs power generated by full-wave rectifying the AC power from the power receiving coil unit 140. The rectifier circuit 153 is, for example, a diode bridge. Alternatively, the rectifier circuit 153 may output power generated by half-wave rectifying the AC power from the power receiving coil unit 140.

[0116] The smoothing circuit 154 generates DC power by smoothing the power from the rectifying circuit 153. The smoothing circuit 154 may include an inductor 1541a, a capacitor 1542a, and a capacitor 1542b. One end of the inductor 1541a is connected to one of a pair of inputs of the smoothing circuit 154. The other end of the inductor 1541a is connected to the positive output (V OUT+The positive output of the rectifying and smoothing unit 150 is connected via a positive line 160p (see Fig.23 (a) and Fig.23 (b)) is connected to one end of each of one or more capacitors of the power storage unit 160.

[0117] One end of the capacitor 1542a is connected to one of the pair of inputs of the smoothing circuit 154 and one end of the inductor 1541a. The other end of the capacitor 1542a is connected to the other of the pair of outputs of the smoothing circuit 154 and the negative output (V OUT- The negative output of the rectifying and smoothing unit 150 is connected via a negative line 160m (see Fig.23 (a) and Fig.23 (b)) is connected to the other end of each of the one or more capacitors of the power storage unit 160. One end of the capacitor 1542b is connected to the other end of the inductor 1541a. The other end of the capacitor 1542b is connected to the other of the pair of outputs of the smoothing circuit 154 and the negative output (V OUT- )connect.

[0118] The rectifying and smoothing unit 150 may further include a voltage detector 155v and a current detector 155i. The voltage detector 155v detects a voltage value between a positive output and a negative output of the rectifying and smoothing unit 150. The current detector 155i detects a current value between the rectifying and smoothing unit 150 and the power storage unit 160. The voltage value detected by the voltage detector 155v and the current value detected by the current detector 155i are notified to the control unit 152. The control unit 152 generates the above-mentioned instruction signal in accordance with the electric power stored in the power storage unit 160. For example, when the electric power stored in the power storage unit 160 is less than the first threshold value, the control unit 152 generates an instruction signal for instructing the feeding unit 120 to supply power, that is, output and transmit AC electric power. The first threshold value is, for example, the electric power consumption of a load such as the electric power consumption component 240. In addition, it may be a value obtained by multiplying the electric power consumption of the load such as the electric power consumption component 240 by a certain value (for example, a value in a range of 1 to 3) in consideration of a margin. On the other hand, when the electric power stored in the power storage unit 160 is greater than the second threshold value, the control unit 152 generates an instruction signal for instructing the power feeding unit 120 to stop supplying power, that is, to stop outputting and transmitting AC electric power. The second threshold value is a value that does not exceed the limit storage electric power of the power storage unit 160. The second threshold value is, for example, a value obtained by multiplying the limit storage electric power of the power storage unit 160 by a certain value (for example, a value less than 1).

[0119] The rectifying and smoothing section 150 includes the above-mentioned communication section 151. The communication section 151 includes a driver 151d, a transmitter 151tx, and a receiver 151rx. The transmitter 151tx is a transmitter of a wireless signal or a transmitter of an optical signal. The receiver 151rx is a receiver of a wireless signal or a receiver of an optical signal. The communication section 151 drives the transmitter 151tx through the driver 151d, so that a signal from the control section 122 such as an instruction signal is output from the transmitter 151tx as a wireless signal or an optical signal. The signal output from the transmitter 151tx is received by the communication section 121 of the feeding section 120. In addition, the communication section 151 receives a signal from the communication section 121 through the receiver 151rx, and inputs the received signal to the control section 152 via the driver 151d.

[0120] [RF filter 190]

[0121] Reference Fig.15 . Fig.15 FIG. 1 is a diagram showing an RF filter 190 according to an exemplary embodiment. Fig.15 As shown, the signal line 1250 may include a first signal line electrically connecting the signal output (Tx) of the feed section 120 with the signal input (Rx) of the rectifying and smoothing section 150, and a second signal line electrically connecting the signal input (Rx) of the feed section 120 with the signal output (Tx) of the rectifying and smoothing section 150. The signal line 1250 may include a signal line connecting the first reference voltage terminal (VCC) of the feed section 120 with the first reference voltage terminal (VCC) of the rectifying and smoothing section 150, and a signal line connecting the second reference voltage terminal (GND) of the feed section 120 with the second reference voltage terminal (GND) of the rectifying and smoothing section 150. The signal line 1250 may be a shielded cable covered by a shield of ground potential. In this case, the plurality of signal lines constituting the signal line 1250 may be covered by the shield one by one, or may be covered by the shield together. The RF filter 190 provides a low-pass filter to each of the plurality of signal lines constituting the signal line 1250. The low-pass filter may be an LC filter including an inductor and a capacitor. The inductor of the low-pass filter constitutes a portion of the corresponding signal line. The capacitor is connected between one end of the inductor connected to the feeder 120 and the ground. By using the RF filter 190, it is possible to suppress the transmission of high-frequency electric power (high-frequency noise) via the signal line 1250 between the rectifying and smoothing unit 150 and the feeder 120.

[0122] [Communication section of the power feeding section and communication section of the rectifying and smoothing section]

[0123] Reference Figure 16 to Figure 18 . Fig.16 FIG. 1 is a diagram showing a communication unit of a power feeding unit and a communication unit of a rectifying and smoothing unit according to an exemplary embodiment. Fig.17 and Fig.18 Each of the figures schematically shows a plasma processing apparatus according to another exemplary embodiment. Figure 6 , Figure 7 , Fig.16 , Fig.17 and Fig.18 As shown, the communication unit 121 and the communication unit 151 can be configured to transmit signals such as the above-mentioned indication signal between each other via wireless communication. Communication via wireless communication can also be performed by optical communication. In the case where the communication unit 121 and the communication unit 151 transmit signals between them via wireless communication, the communication unit 121 and the communication unit 151 can be arranged in any position as long as there is no obstruction between them. According to the examples shown in these figures, the RF filter 190 is not required. In addition, in the case including Figure 16 to Figure 18 In various exemplary embodiments of the examples shown, the signal line 1250 may be a shielded cable covered by a shield at ground potential. In this case, the plurality of signal lines constituting the signal line 1250 may be covered by the shield individually or together.

[0124] Reference Figure 19 to Figure 22 . Fig.19 FIG. 1 is a diagram showing a communication section of a power feeding section and a communication section of a rectifying and smoothing section according to another exemplary embodiment. Figure 20 to Figure 22 Each of the figures schematically shows a plasma processing apparatus according to another exemplary embodiment. Figure 19 to Figure 22 As shown in the figure, the communication unit 121 and the communication unit 151 can be configured to transmit a signal (optical signal) such as the above-mentioned instruction signal between each other via the optical fiber 1260, that is, by optical fiber communication. In the case where the communication unit 121 and the communication unit 151 transmit signals between them via the optical fiber 1260, the communication unit 121 and the communication unit 151 can be arranged at any position as long as the bending radius of the optical fiber 1260 is within the allowable range. In the examples shown in these figures, the RF filter 190 is also not required.

[0125] [Electricity storage unit]

[0126] Reference Fig.23 (a) and Fig.23 (b). Fig.23 (a) and Fig.23 (b) and (c) are diagrams showing a power storage unit according to an exemplary embodiment. Fig.23 As shown in (a), the power storage unit 160 includes a capacitor 161. The capacitor 161 is connected between a pair of power supply lines, that is, a positive line 160p and a negative line 160m. The positive line 160p is connected from the positive output (V OUT+) extends toward the load. The negative line 160m extends from the negative output (V OUT- ) extends toward the load. Capacitor 161 may be a polarized capacitor. Capacitor 161 may also be a double-layer battery or a lithium-ion battery.

[0127] like Fig.23 As shown in (b), the storage unit 160 may include a plurality of capacitors 161. The plurality of capacitors 161 are connected in series between the positive line 160p and the negative line 160m. The plurality of capacitors 161 may have the same electrostatic capacitance as each other, or may have electrostatic capacitances different from each other. Each of the plurality of capacitors 161 may be a polarized capacitor. Each of the plurality of capacitors 161 may also be an electric double layer battery or a lithium ion battery. The storage unit 160 needs to be used under the condition that the total value of the input voltage corresponding thereto and the line potential difference caused by normal mode noise is lower than the allowable input voltage. In the case where the storage unit 160 includes a plurality of capacitors 161 connected in series, the allowable input voltage of the storage unit 160 becomes higher. Therefore, according to Fig.23 In the example shown in (b), the noise resistance of the power storage unit 160 is improved.

[0128] [Voltage Control Converter]

[0129] Reference Fig.24 . Fig.24 1 is a diagram showing a voltage control converter according to an exemplary embodiment. The voltage control converter 170 is a DC-DC converter. The voltage control converter 170 is connected between the power storage unit 160 and the constant voltage control unit 180. The positive line 160p is connected to the positive input (V IN+ ) is connected. The negative line 160m is connected to the negative input (V IN- ) connection. The positive output (V OUT+ ) and the positive input (V IN+ ) is connected. The negative output (V OUT- ) and the negative input (V IN- )connect.

[0130] The voltage control converter 170 may include a control unit 172, a low pass filter 173, a transformer 174, and a capacitor 175. The low pass filter 173 may include an inductor 1731a, a capacitor 1732a, and a capacitor 1732b. One end of the inductor 1731a is connected to the positive input (V IN+ ) is connected. The other end of the inductor 1731a is connected to one end of the primary side coil of the transformer 174. One end of the capacitor 1732a is connected to one end of the inductor 1731a and the positive input (VIN+ ) is connected. The other end of the capacitor 1732a is connected to the negative input (V IN- ) is connected. One end of the capacitor 1732b is connected to the other end of the inductor 1731a. The other end of the capacitor 1732b is connected to the negative input (V IN- )connect.

[0131] The transformer 174 includes a primary coil 1741, a secondary coil 1742, and a switch 1743. The other end of the primary coil 1741 is connected to the negative input (V IN- ) is connected. One end of the secondary side coil 1742 is connected to one end of the capacitor 175 and the positive output (V OUT+ The other end of the secondary coil 1742 is connected to the other end of the capacitor 175 and the negative output (V OUT- )connect.

[0132] The driver 1744 is connected to the switch 1743. The driver 1744 turns the switch 1743 on and off. When the switch 1743 is closed, that is, when the other end of the primary side coil 1741 and the negative input (V IN- ) is in the on state, the other end of the primary side coil 1741 is connected to the negative input (V IN- ) is connected, and the DC power from the voltage control converter 170 is supplied to the constant voltage control unit 180. On the other hand, when the switch 1743 is turned off, that is, the other end of the primary side coil 1741 is connected to the negative input (V IN- ) is in a non-conducting state, the other end of the primary side coil 1741 is connected to the negative input (V IN- ) is disconnected, and the supply of DC power from the voltage control converter 170 to the constant voltage control unit 180 is cut off.

[0133] The voltage control converter 170 may further include a voltage detector 176v and a current detector 176i. The voltage detector 176v detects a voltage value between both ends of the secondary side coil 1742 or a voltage value between the positive output and the negative output of the voltage control converter 170. The current detector 176i measures a current value between the other end of the secondary side coil 1742 and the negative output of the voltage control converter 170. The voltage value detected by the voltage detector 176v and the current value detected by the current detector 176i are notified to the control unit 172. In addition, the control unit 172 may be the same as or different from at least one of the control unit 122 and the control unit 152.

[0134] When the voltage value detected by the voltage detector 176v is greater than the threshold value, the control unit 172 controls the driver 1744 to cut off the supply of DC power from the voltage control converter 170 to the constant voltage control unit 180. The voltage value between the positive output and the negative output of the voltage control converter 170 is the sum of the output voltage value of the voltage control converter 170 and the line potential difference caused by the normal mode noise. In this embodiment, it is possible to suppress the damage of the load of the voltage control converter 170 caused by the overvoltage caused by the line potential difference caused by the normal mode noise.

[0135] [Constant pressure control unit]

[0136] Reference Fig.25 and Fig.26 . Fig.25 and Fig.26 The constant voltage control unit 180 is connected between the power storage unit 160 and at least one power consumption component 240 and can control the application of voltage (application of DC voltage) to at least one power consumption component 240 and stop thereof.

[0137] The constant voltage control unit 180 includes a control unit 182 and at least one switch 183. The positive input (V IN+ ) is connected to the power consumption component 240 via the switch 183. The negative input (V IN- ) is connected to the electric power consumption component 240. The switch 183 is controlled by the control unit 182. When the switch 183 is closed, the DC voltage from the constant voltage control unit 180 is applied to the electric power consumption component 240. When the switch 183 is opened, the application of the DC voltage from the constant voltage control unit 180 to the electric power consumption component 240 is stopped. In addition, the control unit 182 may be the same as or different from at least any one of the control unit 122, the control unit 152, and the control unit 172.

[0138] exist Fig.25 and Fig.26 In the illustrated embodiment, the plasma processing apparatus includes a plurality of power consumption components 240. The constant voltage control unit 180 includes a control unit 182 and a plurality of switches 183. The positive input (V IN+ ) is connected to a plurality of power consumption components 240 via a plurality of switches 183. The negative input (V IN- ) is connected to multiple power consumption components 240.

[0139] exist Fig.25 and Fig.26In the illustrated embodiment, the plurality of electric power consumption components 240 may include a plurality of heaters (resistance heating elements). The plurality of heaters may be disposed within the substrate support portion 11. Fig.25 In the illustrated embodiment, a plurality of resistors 260 are arranged near each of the plurality of heaters. Each of the plurality of resistors 260 has a resistance value that changes according to temperature. Each of the plurality of resistors 260 is, for example, a thermistor. Each of the plurality of resistors 260 is connected in series with a reference resistor (not shown). The constant voltage control unit 180 includes a plurality of measuring units 184. Each of the plurality of measuring units 184 can apply a reference voltage to the series connection of a corresponding resistor among the plurality of resistors 260 and a reference resistor to detect a voltage value between both ends of the resistor. Each of the plurality of measuring units 184 notifies the control unit 182 of the detected voltage value. The control unit 182 determines the temperature of the area where the corresponding heater among the plurality of heaters is arranged from the notified voltage value, and controls the application of the DC voltage to the corresponding heater so that the temperature of the area approaches the target temperature. In addition, an optical fiber thermometer may be arranged instead of the plurality of resistors 260. In this case, wiring between the plurality of resistors 260 and the plurality of measuring units 184 is not required, and therefore, the influence of high-frequency conductive noise on the electric power consumption component 240 can be eliminated.

[0140] exist Fig.26 In the illustrated embodiment, the constant voltage control unit 180 includes a voltage detector 185v and a plurality of current detectors 185i. The voltage detector 185v detects the voltage value applied to each of the plurality of heaters. The plurality of current detectors 185i measure the value of the current supplied to the corresponding heater among the plurality of heaters, that is, the current value. The plurality of measuring units 184 determine the resistance value of the corresponding heater among the plurality of heaters based on the current value detected by the corresponding current detector among the plurality of current detectors 185i and the voltage value detected by the voltage detector 185v. The control unit 182 determines the temperature of each of the plurality of areas where the plurality of heaters are respectively configured based on the resistance value detected by each of the plurality of heaters. The control unit 182 controls the application of the DC voltage to each of the plurality of heaters so that the temperature of each of the plurality of areas approaches the target temperature.

[0141] [Method for controlling the amount of power stored in the power storage unit]

[0142] Reference Fig. 27 . Fig. 27 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Fig. 27 The plasma processing device 100G shown in FIG. Figure 7 The following will describe the differences of the plasma processing apparatus 100E shown.

[0143] In the plasma processing apparatus 100G, the power storage unit 160 is not integrated with the voltage control converter 170 and the constant voltage control unit 180. In addition, in the plasma processing apparatus 100G, the power storage unit 160 includes a pair of input switches 160SI and a pair of output switches 160SO. The power storage unit 160 is connected to the rectifying and smoothing unit 150 via the pair of input switches 160SI. The power storage unit 160 is connected to the voltage control converter 170 via the pair of output switches 160SO. The other structures of the plasma processing apparatus 100G are the same as the corresponding structures of the plasma processing apparatus 100E.

[0144] Next, a method for controlling the amount of electricity stored in the electricity storage unit 160 in the plasma processing apparatus 100G is described. The method for controlling the amount of electricity stored includes a method for charging the electricity storage unit 160 when the electricity storage unit 160 is loaded on the plasma processing apparatus 100G. When the electricity storage unit 160 is loaded on the plasma processing apparatus 100G, the connection of the electricity storage unit 160 to the rectifying and smoothing unit 150 is established by setting the pair of input switches 160SI to the ON state (conducting state). In addition, the connection of the electricity storage unit 160 to the voltage control converter 170 is established by setting the pair of output switches 160SO to the ON state (conducting state).

[0145] Then, the processing in the initial charging mode is performed. In the initial charging mode, the storage unit 160 is charged by wireless power supply using the feeding unit 120, the feeding coil unit 130 and the receiving coil unit 140. At this time, the feeding unit 120 operates in the initial charging mode. When the voltage value of the storage unit 160 detected by the voltage detector 155v reaches a specified value, the control unit 152 of the rectification and smoothing unit 150 sends a signal indicating that charging is completed to the feeding unit 120 via the communication unit 151 and the communication unit 121. When receiving the signal indicating that charging is completed, the control unit 122 of the feeding unit 120 shifts from the initial charging mode to the normal operation mode.

[0146] Below, refer to Fig.28 . Fig.28 1 is a diagram for explaining charging of the power storage unit of the plasma processing apparatus according to another exemplary embodiment. In a charging method according to another embodiment, the power storage unit 160 may be charged before being loaded into the plasma processing apparatus 100G and then loaded into the plasma processing apparatus 100G.

[0147] Specifically, if Fig.28As shown, before loading into the plasma processing apparatus 100G, the power storage unit 160 can be connected to the DC regulated power supply 510 via a pair of input switches 160SI. The positive electrode of the power storage unit 160 can be connected to the positive output of the DC regulated power supply 510 via one of the pair of input switches 160SI and a reverse current prevention diode. When charging the power storage unit 160, the pair of input switches 160SI are set to the ON state, and the pair of output switches 160SO are set to the OFF state (non-conductive state). After the charging of the power storage unit 160 is completed, the pair of input switches 160SI are set to the OFF state.

[0148] Then, the charged power storage unit 160 is mounted on the plasma processing apparatus 100G, connected to the rectifying and smoothing unit 150 via the pair of input switches 160SI, and connected to the voltage control converter 170 via the pair of output switches 160SO. Then, the pair of input switches 160SI and the pair of output switches 160SO are set to the ON state.

[0149] The method for controlling the amount of electricity stored in the electricity storage unit 160 may further include a method for discharging the electricity storage unit 160. In the method for discharging the electricity storage unit 160 of the plasma processing apparatus 100G, a pair of input switches 160SI and a pair of output switches 160SO are set to an OFF state (non-conductive state). Next, the electricity storage unit 160 is removed from the plasma processing apparatus 100G. Then, outside the plasma processing apparatus 100G, the electric power of the electricity storage unit 160 is released (discharged) to a dummy load or the like connected to the electricity storage unit 160.

[0150] Below, refer to Figure 29 to Figure 31 . Fig.29 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment. Fig.30 Yes means Fig.29 FIG. 1 is a diagram showing a state in which a rectifying and smoothing unit of a plasma processing device is connected to a power receiving coil unit. Fig.31 Yes means Fig.29 The figure shows the state where the rectifying and smoothing part of the plasma processing device is connected to the DC regulated power supply. Fig.29 The plasma processing device 100H shown in FIG. Fig. 27 The following will describe the differences of the plasma processing apparatus 100G shown in FIG.

[0151] In the plasma processing apparatus 100H, the rectifying and smoothing unit 150 further includes a display 156 , a driver 156 d , and a power input connector 157 .

[0152] The power input connector 157 is provided to be accessible from the outside of the ground frame 110. That is, the ground frame 110 is provided with an opening 110w for enabling access to the power input connector 157 from the outside of the ground frame 110. The power input connector 157 includes a first power input terminal 1571 and a second power input terminal 1572. Fig.30 and Fig.31 In the example, the first power supply input terminal 1571 and the second power supply input terminal 1572 are each a female terminal, but may also be a male terminal.

[0153] As described above, in the rectifying and smoothing unit 150 , the rectifying circuit 153 includes a diode bridge. The rectifying circuit 153 is connected between the power supply input connector 157 and the power storage unit 160 . The rectifying circuit 153 is connected to the power storage unit 160 via the smoothing circuit 154 .

[0154] like Fig.30 As shown, the plasma processing device 100H further includes a power supply output connector 450. The power supply output connector 450 includes a first power supply output terminal 451 and a second power supply output terminal 452, which are detachable relative to the power supply input connector 157. The first power supply output terminal 451 and the second power supply output terminal 452 can be electrically connected to the first power supply input terminal 1571 and the second power supply input terminal 1572. The first power supply output terminal 451 and the second power supply output terminal 452 are electrically connected to the first power supply input terminal 1571 and the second power supply input terminal 1572 through the opening 110w. Therefore, the power supply output connector 450 may further include an insulating component 453. The first power supply output terminal 451 and the second power supply output terminal 452 penetrate the insulating component 453 and protrude from the insulating component 453. The insulating component 453 is located between the first power supply output terminal 451 and the second power supply output terminal 452 and the ground frame 110, respectively, when the first power supply output terminal 451 and the second power supply output terminal 452 are connected to the first power supply input terminal 1571 and the second power supply input terminal 1572.

[0155] The power receiving coil unit 140 is arranged outside the ground frame 110, that is, in the space 110a, and is connected to the power supply output connector 450. That is, the power receiving coil 141 is connected to the first power supply output terminal 451 and the second power supply output terminal 452. The RF filter 200 may be connected between the power receiving coil 141 and the first power supply output terminal 451 and the second power supply output terminal 452.

[0156] When the power receiving coil unit 140 is mounted on the plasma processing apparatus 100H, the power output connector 450 is connected to the power input connector 157. Thus, the power receiving coil unit 140 disposed outside the ground frame 110 is connected to the power storage unit 160 via the power output connector 450, the power input connector 157 and the rectifying and smoothing unit 150. Fig.30 In the example shown, the power receiving coil unit 140 is formed integrally with the power feeding coil unit 130. A fan 134f is installed on the power receiving coil unit 140 and the power feeding coil unit 130 for cooling them. Fig.30 In the example shown, the fan 134f is installed on the left side of the power receiving coil unit 140 and the power feeding coil unit 130, but the position where the fan 134f is installed is not limited to Fig.30 The fan 134f may be installed on the right side of the power receiving coil unit 140 and the power feeding coil unit 130, or may be installed below.

[0157] The ground frame 110 of the plasma processing device 100H may further include an optical window 110v. The optical window 110v is located between the display 156 and the space outside the ground frame 110 so that the display 156 can be viewed from the outside of the ground frame 110. The optical window 110v can be opened and closed by a metal shielding member 110c. When the power receiving coil unit 140 is electrically connected to the rectifying and smoothing unit 150, the optical window 110v is closed by the shielding member 110c. When the optical window 110v is closed by the shielding member 110c, the shielding member 110c is electrically connected to the ground frame 110.

[0158] Below, except Figure 29 to Figure 31 In addition, refer to Fig.32 (a) and Fig.32 (b) of the present invention describes a method for controlling the amount of electricity stored in the electricity storage unit 160 of the plasma processing apparatus 100H. Fig.32 (a) is a timing chart of an example of the voltage of the power storage unit, Fig.32 (b) is a timing chart of an example of the current supplied to the power storage unit. The method of controlling the storage amount of the power storage unit 160 includes a method of charging the power storage unit 160 .

[0159] In the method of charging the power storage unit 160 of the plasma processing apparatus 100H, the power output connector 450 is removed from the power input connector 157 , and the power receiving coil unit 140 is removed from the plasma processing apparatus 100H.

[0160] Furthermore, in the charging method of the power storage unit 160 of the plasma processing apparatus 100H, as shown in FIG. Fig.31As shown, a power supply unit 500 is used to charge the power storage unit 160. The power supply unit 500 includes a DC regulated power supply 510 and a power supply connector 520. The power supply connector 520 includes a first power supply terminal 521 and a second power supply terminal 522, and is detachable relative to the power supply input connector 157. The first power supply terminal 521 and the second power supply terminal 522 are connected to the DC regulated power supply 510 arranged outside the ground frame 110, that is, in the space 110a. The first power supply terminal 521 and the second power supply terminal 522 can be electrically connected to the first power supply input terminal 1571 and the second power supply input terminal 1572.

[0161] In the charging method of the power storage unit 160 of the plasma processing apparatus 100H, as shown in FIG. Fig.31 As shown, the first power supply terminal 521 and the second power supply terminal 522 are connected to the first power supply input terminal 1571 and the second power supply input terminal 1572. The first power supply terminal 521 and the second power supply terminal 522 are electrically connected to the first power supply input terminal 1571 and the second power supply input terminal 1572 through the opening 110w. Therefore, the power supply connector 520 may also include an insulating component 523. The first power supply terminal 521 and the second power supply terminal 522 pass through the insulating component 523 and protrude from the insulating component 523. In a state where the first power supply terminal 521 and the second power supply terminal 522 are connected to the first power supply input terminal 1571 and the second power supply input terminal 1572, the insulating component 523 is located between the first power supply terminal 521 and the second power supply terminal 522 and the ground frame 110 respectively.

[0162] Next, in the charging method of the power storage unit 160 of the plasma processing apparatus 100H, power is supplied from the DC regulated power supply 510 to the power storage unit 160 to charge the power storage unit 160. In addition, the initial setting value of the current supplied from the DC regulated power supply 510 to the power storage unit 160 is Fig.32 The current value I shown in (b) SET .

[0163] The charging state of the power storage unit 160 is monitored by the control unit 152. When the power storage unit 160 is charged, the control unit 152 may use the voltage detector 155v to monitor the voltage value of the power storage unit 160. In addition, when the power storage unit 160 is charged, the control unit 152 may use the current detector 155i to monitor the value of the current flowing from the DC regulated power supply 510 to the power storage unit 160 (i.e., the current value).

[0164] like Fig.32 (a) and Fig.32 As shown in (b), the control unit 152 may monitor the voltage value of the storage unit 160, and when the voltage value of the storage unit 160 reaches the set voltage value V SET Time point t Aor time point T A After that, the time point t E Alternatively, the control unit 152 may monitor the voltage value of the storage unit 160 and the current value from the DC regulated power supply 510 to the storage unit 160, and when the voltage value of the storage unit 160 reaches the set voltage value V SET Time point t A After that, when the current value reaches the threshold value I TH Time point t E , the charging of the power storage unit 160 is completed (ie, stopped). Threshold I TH For example, it is set to a value required for starting the control unit 152. TH For example, it may be set to 0.5 A. Alternatively, the control unit 152 may send a signal to stop the power supply of the DC regulated power supply 510 to the DC regulated power supply 510 through communication between the communication unit 121 and the communication unit 151 , thereby stopping the charging of the power storage unit 160 .

[0165] The control unit 152 can display the charging state of the power storage unit 160 through the display 156. The display 156 may include a semiconductor light emitting element (i.e., an LED). The control unit 152 can control the driver 156d to cause the display 156 to display the charging state of the power storage unit 160. In addition, in this case, the optical window 110v is opened so that the display 156 can be viewed from the outside of the ground frame 110.

[0166] The display 156 can indicate whether the charging of the storage unit 160 is completed by lighting or extinguishing the LED. Alternatively, the display 156 can indicate the charging state of the storage unit 160 by the color of the LED. For example, the display 156 can indicate that the voltage value of the storage unit 160 is a voltage value at which the rectifying and smoothing unit 150 can operate by emitting green light. In addition, the display 156 can indicate that the voltage value of the storage unit 160 is a voltage value at which the rectifying and smoothing unit 150 can operate, but there is room for charging by emitting orange light. In addition, the display 156 can indicate that the voltage value of the storage unit 160 is a voltage value at which the rectifying and smoothing unit 150 cannot operate, and charging is required by emitting red light. Alternatively, the display 156 can include a 7-segment LED, and a numerical value indicating the voltage value of the storage unit 160 can be displayed by the 7-segment LED. In addition, when the display 156 is used, the charging of the storage unit 160 can be manually stopped by the operator when it is completed.

[0167] In the plasma processing apparatus 100H, the first power supply input terminal 1571 and the second power supply input terminal 1572 are connected to the power storage unit 160 via the diode bridge of the rectifier circuit 153 of the rectifier-smoothing unit 150. Therefore, in order to charge the power storage unit 160, the DC regulated power supply 510 can be electrically connected to the power storage unit 160 without using a reverse current prevention circuit. In addition, after the charging of the power storage unit 160 is completed, when the power receiving coil unit 140 is electrically connected to the rectifier-smoothing unit 150 (see Fig.30 ), the first power supply input terminal 1571 and the second power supply input terminal 1572 are not charged. Therefore, it is possible to prevent the operator from getting an electric shock.

[0168] Below, refer to Figure 33 to Figure 36 . Fig.33 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment. Fig.34 This is a diagram showing a state in which a rectifying and smoothing unit and a power receiving coil unit of a plasma processing apparatus according to still another exemplary embodiment are connected.

[0169] Fig.35 This is a diagram showing a state in which a rectifying and smoothing unit of a plasma processing apparatus according to still another exemplary embodiment is connected to a DC regulated power supply. Fig.36 FIG. 1 is a diagram showing a state in which a rectifying and smoothing section of a plasma processing device according to another exemplary embodiment is connected to a discharge unit. Fig.33 The plasma processing device 100J shown in FIG. Fig.29 The following will describe the differences of the plasma processing apparatus 100H shown in FIG.

[0170] like Fig.34 As shown, in the plasma processing apparatus 100J, the rectifying and smoothing unit 150 includes a driver 156d and a power supply input connector 157, similarly to the rectifying and smoothing unit 150 of the plasma processing apparatus 100H. Fig.34 As shown, the plasma processing apparatus 100J includes the power output connector 450 similarly to the plasma processing apparatus 100H. In the plasma processing apparatus 100J, the rectifying and smoothing unit 150 further includes a display 1561 , a display 1562 , and a discharge output connector 158 .

[0171] As in the case of the plasma processing apparatus 100H, when the power receiving coil unit 140 is mounted on the plasma processing apparatus 100J, the power output connector 450 is connected to the power input connector 157. Thus, the power receiving coil unit 140 disposed outside the ground frame 110 is connected to the power storage unit 160 via the power output connector 450, the power input connector 157 and the rectifying and smoothing unit 150. Fig.34In the example shown, the power receiving coil unit 140 is formed integrally with the power feeding coil unit 130. A fan 134f is installed on the power receiving coil unit 140 and the power feeding coil unit 130 for cooling them. Fig.34 In the example shown, the fan 134f is installed on the right side of the power receiving coil unit 140 and the power feeding coil unit 130, but the position where the fan 134f is installed is not limited to Fig.34 The fan 134f may be installed above the power receiving coil unit 140 and the power feeding coil unit 130, or may be installed below.

[0172] In the plasma processing apparatus 100J, the power supply output connector 450 may further include an insulating portion 454. The insulating portion 454 is formed of an insulating material. In the case where the first discharge output terminal 1581 and the second discharge output terminal 1582 are each a female terminal, the insulating portion 454 may be a pair of insulating pins inserted into each of the first discharge output terminal 1581 and the second discharge output terminal 1582. Alternatively, the insulating portion 454 may be an insulating cap covering the first discharge output terminal 1581 and the second discharge output terminal 1582.

[0173] Below, except Figure 33 to Figure 36 In addition, refer to Fig.32 (a) and Fig.32 (b) and Fig.37 , a method for controlling the amount of power stored in the power storage unit 160 of the plasma processing apparatus 100J is described. Fig.37 This is a timing chart showing an example of the voltage of the power storage unit.

[0174] The method for controlling the amount of electricity stored in the electricity storage unit 160 of the plasma processing apparatus 100J includes a method for charging the electricity storage unit 160. In the method for charging the electricity storage unit 160 of the plasma processing apparatus 100J, the power output connector 450 is removed from the power input connector 157, and the power receiving coil unit 140 is removed from the plasma processing apparatus 100H.

[0175] Furthermore, in the charging method of the power storage unit 160 of the plasma processing apparatus 100J, as shown in FIG. Fig.35 As shown, a power supply unit 500 is used. As described above with respect to charging of the power storage unit 160 of the plasma processing apparatus 100H, the power supply unit 500 includes a DC stabilized voltage power supply 510 and a power supply connector 520 .

[0176] In the charging method of the power storage unit 160 of the plasma processing apparatus 100J, as shown in FIG. Fig.35As shown, the first power supply terminal 521 and the second power supply terminal 522 are connected to the first power supply input terminal 1571 and the second power supply input terminal 1572. The first power supply terminal 521 and the second power supply terminal 522 are electrically connected to the first power supply input terminal 1571 and the second power supply input terminal 1572 through the opening 110w.

[0177] Next, in the method of charging the power storage unit 160 of the plasma processing apparatus 100J, power is supplied from the DC regulated power supply 510 to the power storage unit 160 to charge the power storage unit 160 .

[0178] The charging state of the power storage unit 160 is monitored by the control unit 152. When the power storage unit 160 is charged, the control unit 152 may use the voltage detector 155v to monitor the voltage value of the power storage unit 160. In addition, when the power storage unit 160 is charged, the control unit 152 may use the current detector 155i to monitor the value of the current flowing from the DC regulated power supply 510 to the power storage unit 160 (i.e., the current value).

[0179] like Fig.32 (a) and Fig.32 As shown in (b), the control unit 152 may monitor the voltage value of the storage unit 160, and when the voltage value of the storage unit 160 reaches the set voltage value V SET Time point t A or time point T A After that, the time point t E Alternatively, the control unit 152 may monitor the voltage value of the storage unit 160 and the current value from the DC regulated power supply 510 to the storage unit 160, and when the voltage value of the storage unit 160 reaches the set voltage value V SET Time point t A After that, when the current value reaches the threshold value I TH Time point t E , completing (ie, stopping) charging of the power storage unit 160. Alternatively, the control unit 152 sends a signal to stop the power supply of the DC regulated power supply 510 to the DC regulated power supply 510 through communication with the communication unit 121 and the communication unit 151, thereby stopping charging.

[0180] The control unit 152 can display the charging state of the power storage unit 160 through the display 1561. The display 1561 can include a semiconductor light emitting element (i.e., LED) similarly to the display 156 in the plasma processing apparatus 100H. The control unit 152 can control the driver 156d so that the display 1561 displays the charging state of the power storage unit 160. In this case, the insulating member 523 can be formed of an optically transparent material so that the display 1561 can be viewed from the outside of the ground frame 110. The display of the charging state of the power storage unit 160 in the display 1561 can be the same as the display of the display 156 in the plasma processing apparatus 100H.

[0181] In one embodiment, the power supply unit 500 may further include a tester 530. In addition, the power supply connector 520 may include a pair of tester terminals 524. The pair of tester terminals 524 can be connected to the first discharge output terminal 1581 and the second discharge output terminal 1582, and can also disconnect the first discharge output terminal 1581 and the second discharge output terminal 1582. In a state where the first power supply terminal 521 and the second power supply terminal 522 are connected to the first power supply input terminal 1571 and the second power supply input terminal 1572, the pair of tester terminals 524 are connected to the first discharge output terminal 1581 and the second discharge output terminal 1582. On the other hand, when the first power supply terminal 521 and the second power supply terminal 522 are separated from the first power supply input terminal 1571 and the second power supply input terminal 1572, the pair of tester terminals 524 are separated from the first discharge output terminal 1581 and the second discharge output terminal 1582.

[0182] The tester 530 monitors the voltage value of the power storage unit 160 when the pair of tester terminals 524 are connected to the first discharge output terminal 1581 and the second discharge output terminal 1582. Therefore, when the power storage unit 160 is charged from the DC regulated power supply 510, the charging state of the power storage unit 160 can be monitored by the tester 530.

[0183] In the plasma processing apparatus 100J, the first power supply input terminal 1571 and the second power supply input terminal 1572 are connected to the power storage unit 160 via the diode bridge of the rectifier circuit 153 of the rectifier-smoothing unit 150. Therefore, in order to charge the power storage unit 160, the DC regulated power supply 510 can be electrically connected to the power storage unit 160 without using a reverse current prevention circuit. In addition, after the charging of the power storage unit 160 is completed, when the power receiving coil unit 140 is electrically connected to the rectifier-smoothing unit 150 (see Fig.34 ), the first power supply input terminal 1571 and the second power supply input terminal 1572 are not charged. Therefore, it is possible to prevent the operator from getting an electric shock.

[0184] The method for controlling the amount of electricity stored in the electricity storage unit 160 of the plasma processing apparatus 100J includes a method for discharging the electricity storage unit 160. In the method for discharging the electricity storage unit 160 of the plasma processing apparatus 100J, the power output connector 450 is removed from the power input connector 157, and the power receiving coil unit 140 is removed from the plasma processing apparatus 100H.

[0185] Furthermore, in the discharge method of the power storage unit 160 of the plasma processing apparatus 100J, as shown in FIG. Fig.36 As shown, a discharge unit 600 is used. The discharge unit 600 includes a discharge load 610 and a discharge connector 620. The discharge unit 600 may further include a fan 630. The fan 630 is provided to cool the discharge load 610.

[0186] The discharge connector 620 includes a first discharge terminal 621 and a second discharge terminal 622, and is detachable from the discharge output connector 158. The first discharge terminal 621 and the second discharge terminal 622 are connected to the discharge load 610 disposed outside the ground frame 110, that is, in the space 110a. The first discharge terminal 621 and the second discharge terminal 622 can be electrically connected to the first discharge output terminal 1581 and the second discharge output terminal 1582. The first discharge terminal 621 can be connected to the discharge load 610 via a switch 624.

[0187] In the discharge method of the power storage unit 160 of the plasma processing apparatus 100J, as shown in FIG. Fig.36 As shown, the first discharge terminal 621 and the second discharge terminal 622 are connected to the first discharge output terminal 1581 and the second discharge output terminal 1582 when the switch 624 is set to the OFF state (i.e., the non-conductive state). The first discharge terminal 621 and the second discharge terminal 622 are electrically connected to the first discharge output terminal 1581 and the second discharge output terminal 1582 through the opening 110w. Therefore, the discharge connector 620 may further include an insulating member 623. The first discharge terminal 621 and the second discharge terminal 622 penetrate the insulating member 623 and protrude from the insulating member 623. When the first discharge terminal 621 and the second discharge terminal 622 are connected to the first discharge output terminal 1581 and the second discharge output terminal 1582, the insulating member 623 is located between the first discharge terminal 621 and the second discharge terminal 622 and the ground frame 110.

[0188] Next, in the method of discharging power storage unit 160 , switch 624 is set to an ON state (ie, a conducting state). Thus, the electric power of power storage unit 160 can be released (discharged) to discharge load 610 .

[0189] like Fig.37As shown, during the discharge of the power storage unit 160, the voltage value of the power storage unit 160 increases from the voltage value V at the start of the discharge of the power storage unit 160. S The discharge of the power storage unit 160 is reduced when the voltage value of the power storage unit 160 reaches the threshold value V TH Time point t F Finished and stopped. Threshold V TH For example, the threshold value V is set to a value that does not cause any influence on the human body and does not start the control unit 152. TH For example, it can be set to 2.5 V. After the discharge of the power storage unit 160 is completed, the switch 624 is set to the OFF state, and the discharge unit 600 is removed from the plasma processing apparatus 100J.

[0190] The control unit 152 can display the discharge state of the storage unit 160 through the display 1562. The display 1562 may include a semiconductor light emitting element (i.e., an LED). The control unit 152 can control the driver 156d so that the display 1562 displays the discharge state of the storage unit 160. In this case, the insulating component 523 can be formed of an optically transparent material so that the display 1562 can be viewed from the outside of the ground frame 110. In addition, the display 1562 can also be configured so that when the discharge of the storage unit 160 is completed, its operation becomes impossible and is extinguished. In addition, the plasma processing device 100J can also have a single display that can be used in the same way as the display 1561 and the display 1562 instead of the display 1561 and the display 1562.

[0191] According to the plasma processing apparatus 100J, the power storage unit 160 can be discharged to the discharge load 610 disposed outside the ground frame 110 while the power storage unit 160 is mounted on the plasma processing apparatus 100J. Therefore, an operator can be prevented from being electrocuted during the operation for discharging the power storage unit 160.

[0192] Below, refer to Fig.38 and Fig.39 . Fig.38 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment. Fig.39 FIG. 1 is a diagram showing a configuration related to discharge of a power storage unit in a plasma processing apparatus according to another exemplary embodiment. Fig.38 The plasma processing device 100K shown in FIG. Figure 7 The following will describe the differences of the plasma processing apparatus 100E shown.

[0193] like Fig.38As shown, the plasma processing apparatus 100K further includes a discharge load 65, a plurality of switches 66, and a display 67. The discharge load 65 is a load provided only for the purpose of discharging the power storage unit 160, that is, a discharge-only load, or at least one of the plurality of power consumption components 240 described above (for example, at least one heater). The discharge load 65 is configured to be separated from the ground frame 110 by an insulating distance or more. The plurality of switches 66 may be provided in the non-decompression space of the space 110h in a manner that can be accessed from the outside of the ground frame 110. In addition, the display 67 may be provided to be viewable from the outside of the ground frame 110.

[0194] like Fig.39 As shown, one end of discharge load 65 is connected to one of a pair of power supply lines (for example, positive line 160p) connecting rectification and smoothing unit 150 and power storage unit 160. The other end of discharge load 65 is connected to the other of the pair of power supply lines (for example, negative line 160m).

[0195] The plurality of switches 66 include a discharge mode switch 660 and a switch 662 (or a direct mode switch). In addition, the display 67 includes a display unit 670 and a display unit 672. The display unit 670 and the display unit 672 are each a discharge state display unit capable of indicating the discharge state of the power storage unit 160, and may be an LED.

[0196] The discharge mode switch 660 and the display unit 670 are connected in series with the control unit 152. In addition, the switch 662 is connected between one of a pair of power supply lines (for example, the positive line 160p) connecting the rectifying and smoothing unit 150 and the power storage unit 160 to each other and the discharge load 65. The display unit 672 is connected in parallel with the power storage unit 160 and the discharge load 65.

[0197] exist Fig.39 In the illustrated embodiment, the discharge mode switch 660 can be set to the ON state as a hardware interlock when an abnormality occurs in the plasma processing apparatus 100K. Alternatively, the discharge mode switch 660 can be manually set to the ON state by the operator for the discharge of the power storage unit 160. When the discharge mode switch 660 is set to the ON state, the switch 662 can be manually set to the ON state by the operator, or can be set to the ON state by the control of the control unit 2 or the control unit 152. When the discharge of the power storage unit 160 is completed, the discharge mode switch 660 and the switch 662 can be manually set to the OFF state by the operator, or can be set to the OFF state by the control of the control unit 2 or the control unit 152. In addition, the switch 662 can also be shared with the discharge mode switch 660.

[0198] exist Fig.39In the illustrated embodiment, the method for controlling the amount of electricity stored in the electricity storage unit 160 of the plasma processing apparatus 100K includes a method for discharging the electricity storage unit 160. The discharge of the electricity storage unit 160 is started by setting the discharge mode switch 660 and the switch 662 to the ON state. When the discharge mode switch 660 and the switch 662 are set to the ON state, the electric power of the electricity storage unit 160 can be released (discharged) to the discharge load 65.

[0199] During the discharge of the power storage unit 160, the voltage value of the power storage unit 160 increases from the voltage value V at the start of the discharge of the power storage unit 160. S Reduce (refer to Fig.37 ). The discharge of the storage unit 160 is stopped when the voltage value of the storage unit 160 reaches the threshold value V TH Time point t F After the discharge of the power storage unit 160 is completed, the discharge mode switch 660 and the switch 662 are set to the OFF state.

[0200] Display unit 670 and display unit 672, like display 1562, display the discharge state of storage unit 160 (e.g., light emission of LED) during the discharge of storage unit 160. Display unit 670 and display unit 672 may be configured so that when the discharge of storage unit 160 is completed, their operation becomes impossible and they are turned off.

[0201] exist Fig.39 In the illustrated embodiment, the electric power of the power storage unit 160 is released to the discharge load 65, but the electric power of the power storage unit 160 may be released to a load other than the discharge load 65. For example, the electric power of the power storage unit 160 may be released to at least one of the plurality of electric power consumption components 240.

[0202] Below, refer to Fig.40 . Fig.40 FIG. 1 is a diagram showing a configuration related to discharge of a power storage unit in a plasma processing apparatus according to still another exemplary embodiment. Fig.40 The structure related to the discharge of the power storage unit 160 shown in FIG. 1 can be adopted in the plasma processing apparatus 100K. Fig.40 implementation method, from relative to Fig.39 The embodiments are described from different perspectives.

[0203] exist Fig.40 In the embodiment of the present invention, the discharge load 65 may be a discharge-only load. Fig.40In the embodiment, the plurality of switches 66 include a discharge mode switch 660, a switch 661 (a primary discharge mode switch), and a switch 662 (a direct mode switch or a secondary discharge mode switch). In addition, the display 67 includes a display unit 67a (a direct discharge mode display unit), a display unit 67b (a two-stage discharge mode display unit), a display unit 671 (a primary discharge state display unit), and a display unit 672 (a direct mode discharge state display unit or a secondary discharge state display unit). The display unit 67a, the display unit 67b, the display unit 671, and the display unit 672 may each be an LED.

[0204] The discharge mode switch 660 is connected to the control unit 152. The display unit 67a and the display unit 67b are connected in parallel between the discharge mode switch 660 and the control unit 152. The switch 661 and the display unit 671 are connected in series with the control unit 152. In addition, the switch 662 is connected between one of a pair of power supply lines (for example, the positive line 160p) connecting the rectifying and smoothing unit 150 and the power storage unit 160 to each other and the discharge load 65. The display unit 672 is connected in parallel with the discharge load 65 relative to the power storage unit 160.

[0205] exist Fig.40 In the illustrated embodiment, the discharge mode switch 660 may be set to the ON state as a hardware interlock when an abnormality occurs in the plasma processing apparatus 100K. Alternatively, the discharge mode switch 660 may be manually set to the ON state by an operator to discharge the power storage unit 160 .

[0206] When the discharge mode switch 660 is set to the ON state, the discharge mode switch 660 is selectively connected to one of the display unit 67a and the display unit 67b. When the discharge mode switch 660 is connected to the display unit 67a, the switch 662 is set to the ON state. Fig.39 In the embodiment of the present invention, the discharge of the power storage unit 160 using only the discharge load 65 (i.e., direct mode discharge) is performed. In this case, the display unit 67a displays (e.g., the light emission of the LED) indicating that the direct mode discharge is being performed. In addition, the display unit 672 displays (e.g., the light emission of the LED) indicating that the direct mode discharge is being performed.

[0207] When the discharge mode switch 660 is connected to the display unit 67b, discharge in the two-stage discharge mode is performed. In this case, the display unit 67b displays (e.g., LED lights up) indicating that discharge in the two-stage discharge mode is being performed. In the discharge in the two-stage discharge mode, in the first stage, the switch 661 is set to the ON state, and the electric power of the storage unit 160 is released to at least one of the plurality of electric power consumption components 240 (e.g., at least one heater). At this time, the display unit 671 displays (e.g., LED lights up) indicating that the first stage of discharge is being performed.

[0208] In the discharge in the two-stage discharge mode, in the second stage, the switch 661 is set to the OFF state, and the switch 662 is set to the ON state, and the electric power of the storage unit 160 is released to the discharge load 65. At this time, the display unit 672 displays (for example, the LED lights up) indicating that the second stage of discharge is in progress.

[0209] exist Fig.40 In the embodiment of the present invention, the states of the discharge mode switch 660, the switch 661, and the switch 662 can be switched manually by the operator, or can be switched by the control of the control unit 2 or the control unit 152. In addition, the switch 661 can also be used in conjunction with the conversion of the discharge mode switch 660 to the two-stage discharge mode. In addition, the switch 662 can also be used in conjunction with the conversion of the discharge mode switch 660 to the direct discharge mode. That is, the discharge mode switch 660 can also serve as at least one of the switch 661 and the switch 662.

[0210] exist Fig.40 In the embodiment shown, the method for controlling the amount of electricity stored in the electricity storage unit 160 of the plasma processing apparatus 100K includes a method for discharging the electricity storage unit 160. As described above, the discharge of the electricity storage unit 160 includes a direct mode discharge and a two-stage discharge mode. Fig.41 , a method of discharging power storage unit 160 in the two-step discharge mode will be described. Fig.41 This is a timing chart showing an example of the voltage of the power storage unit.

[0211] By switching the discharge mode switch 660 to the selection of the two-stage discharge mode (connection with the display unit 67b), and setting the switch 661 to the ON state, the discharge method in the two-stage discharge mode is started. Then, the first stage of discharge is performed. In the first stage of discharge, the electric power of the storage unit 160 is released to at least one of the above-mentioned multiple electric power consumption components 240 (for example, at least one heater).

[0212] During the discharge of the power storage unit 160, the voltage value of the power storage unit 160 is as follows: Fig.41 The voltage V at the start of discharge of the power storage unit 160 is shown in FIG.S The discharge of the power storage unit 160 in the first stage is completed and stopped at time point t1 when the voltage value of the power storage unit 160 reaches the threshold value V1. The threshold value V1 is set to a value at which the charge of the power storage unit 160 cannot be discharged to the power consumption component 240. The threshold value V1 can be set to an input lower limit voltage value of the voltage control converter, for example.

[0213] Next, the switch 661 is set to the OFF state, and the switch 662 is set to the ON state. Then, the second stage of discharge is performed. In the second stage of discharge, the electric power of the power storage unit 160 is released to the discharge load 65.

[0214] In the second stage of the discharge of the power storage unit 160, the voltage value of the power storage unit 160 is as follows: Fig.41 The discharge of the power storage unit 160 in the second stage is completed and stopped at the time point t2 when the voltage value of the power storage unit 160 reaches the threshold value V2. After the discharge of the power storage unit 160 in the second stage is completed, the discharge mode switch 660 and the switch 662 are set to the OFF state. The threshold value V2 is set to a value that cannot start the control unit 152 and does not affect the human body. The threshold value V TH For example, it can be set to 2.5V.

[0215] exist Fig.40 and Fig.41 In the illustrated embodiment, the electric power of the power storage unit 160 is released to at least one of the plurality of electric power consumption components 240 in the first stage of discharge, and is released to the discharge load 65 in the second stage of discharge, but the release (discharge) of the electric power of the power storage unit 160 is not limited to this example. The electric power of the power storage unit 160 may be released to the discharge load 65 in the first stage of discharge, and may be released to at least one of the plurality of electric power consumption components 240 in the second stage of discharge. In addition, the electric power of the power storage unit 160 may be released to at least one of the plurality of electric power consumption components 240 and the discharge load 65 at the same time only in a specific period.

[0216] As described above, when the first stage of discharge is being performed, the display unit 671 displays that the first stage of discharge is being performed (for example, the LED emits light). The display unit 671 may be turned off at time t1. In addition, when the second stage of discharge is being performed, the display unit 672 displays that the second stage of discharge is being performed (for example, the LED emits light). The display unit 672 may be turned off at time t2.

[0217] Various exemplary embodiments have been described above, but the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and changes may be made. In addition, elements in different embodiments may be combined to form other embodiments.

[0218] Here, various exemplary embodiments included in the present invention are described in the following [E1] to [E14].

[0219] [E1]

[0220] A plasma processing device, characterized in that it comprises:

[0221] a plasma processing chamber;

[0222] a substrate support disposed within the plasma processing chamber;

[0223] A high frequency power source capable of generating high frequency electrical power;

[0224] an electrode or antenna electrically connected to the high frequency power source and capable of receiving the high frequency electric power to generate plasma from a gas in the plasma processing chamber;

[0225] an electric power consumption component disposed in the plasma processing chamber or in the substrate support;

[0226] a ground frame which is grounded and surrounds the substrate support portion together with the plasma processing chamber;

[0227] an electric storage unit electrically connected to the electric power consumption component and arranged in a space surrounded by the ground frame;

[0228] a rectifying and smoothing unit arranged in the space surrounded by the ground frame, comprising: a power supply input connector including a first power supply input terminal and a second power supply input terminal and arranged to be accessible from the outside of the ground frame, and a rectifying circuit including a diode bridge connected between the power supply input connector and the power storage unit;

[0229] a power supply output connector detachable from the power supply input connector, comprising a first power supply output terminal and a second power supply output terminal electrically connectable to the first power supply input terminal and the second power supply input terminal; and

[0230] The power receiving coil is arranged outside the ground frame, is electrically connected to the power supply output connector, and can receive electric power from the power feeding coil through electromagnetic induction coupling.

[0231] [E2]

[0232] The plasma processing device according to E1 is characterized in that:

[0233] The rectifying and smoothing unit further includes a discharge output connector that is accessible from the outside of the ground frame.

[0234] The discharge output connector includes a first discharge output terminal and a second discharge output terminal respectively connected to two power supply lines connecting the power storage unit and the rectifier circuit to each other.

[0235] [E3]

[0236] The plasma processing apparatus according to E1 or E2, further comprising a discharge-only load electrically connected to the power storage unit via a switch.

[0237] [E4]

[0238] The plasma processing device according to E2 or E3 is characterized in that the rectifying and smoothing unit also includes a display that is arranged to be visible from the outside of the ground frame, and the display can display the discharge state of the power storage unit.

[0239] [E5]

[0240] The plasma processing device according to E4 is characterized in that:

[0241] The rectifying and smoothing unit further comprises:

[0242] a voltage detector capable of detecting a voltage value of the power storage unit; and

[0243] A control unit is configured to control the display so as to display a discharge state of the power storage unit based on the voltage value detected by the voltage detector.

[0244] [E6]

[0245] The plasma processing device according to E4 or E5 is characterized in that the display includes a semiconductor light emitting element.

[0246] [E7]

[0247] The plasma processing device according to any one of E1 to E4, characterized in that:

[0248] The rectifying and smoothing unit further comprises:

[0249] a display configured to be viewed from outside the ground frame;

[0250] a voltage detector capable of detecting a voltage value of the power storage unit; and

[0251] A control unit is configured to control the display so as to display a charging state of the power storage unit based on the voltage value detected by the voltage detector.

[0252] [E8]

[0253] The plasma processing device according to E7 is characterized in that the display includes a semiconductor light emitting element.

[0254] [E9]

[0255] The plasma processing apparatus according to any one of E4 to E8, characterized in that:

[0256] The ground frame comprises:

[0257] an optical window that enables viewing of the display from outside the ground frame; and

[0258] A metal shielding component capable of opening and closing the optical window.

[0259] [E10]

[0260] The plasma processing apparatus according to any one of E1 to E9, wherein the rectifying and smoothing unit further includes a smoothing circuit electrically connected between the rectifying circuit and the power storage unit.

[0261] [E11]

[0262] A method for controlling the amount of stored electricity, characterized in that:

[0263] A plasma processing device to which the method for controlling the amount of stored electricity can be applied includes:

[0264] a plasma processing chamber;

[0265] a substrate support disposed within the plasma processing chamber;

[0266] A high frequency power source capable of generating high frequency electrical power;

[0267] an electrode or antenna electrically connected to the high frequency power source and capable of receiving the high frequency electric power to generate plasma from a gas in the plasma processing chamber;

[0268] an electric power consumption component disposed in the plasma processing chamber or in the substrate support;

[0269] a ground frame which is grounded and surrounds the substrate support portion together with the plasma processing chamber;

[0270] an electric storage unit electrically connected to the electric power consumption component and arranged in a space surrounded by the ground frame;

[0271] a rectifying and smoothing unit arranged in the space surrounded by the ground frame, comprising: a power supply input connector including a first power supply input terminal and a second power supply input terminal and arranged to be accessible from the outside of the ground frame, and a rectifying circuit including a diode bridge connected between the power supply input connector and the power storage unit;

[0272] a power supply output connector detachable from the power supply input connector, comprising a first power supply output terminal and a second power supply output terminal electrically connectable to the first power supply input terminal and the second power supply input terminal; and

[0273] a power receiving coil, which is arranged outside the ground frame, is electrically connected to the power supply output connector, and can receive electric power from the power feeding coil through electromagnetic induction coupling,

[0274] The method for controlling the amount of stored electricity comprises:

[0275] A step of connecting a first power supply terminal and a second power supply terminal connected to a DC regulated power supply arranged outside the ground frame to the first power supply input terminal and the second power supply input terminal; and

[0276] A step of supplying power from the DC regulated power supply to the power storage unit.

[0277] [E12]

[0278] The method for controlling the amount of stored electricity according to E11 is characterized in that:

[0279] The rectifying and smoothing unit further includes a discharge output connector that is accessible from the outside of the ground frame.

[0280] The discharge output connector includes a first discharge output terminal and a second discharge output terminal respectively connected to two power supply lines connecting the power storage unit and the rectifier circuit to each other.

[0281] The method for controlling the amount of stored electricity also includes:

[0282] A step of connecting a first discharge terminal and a second discharge terminal connected to a discharge load disposed outside the ground frame to the first discharge output terminal and the second discharge output terminal; and

[0283] The step of releasing the electric power of the power storage unit to the discharge load.

[0284] [E13]

[0285] The method for controlling the amount of stored electricity according to E11 is characterized in that:

[0286] The plasma processing apparatus further includes a discharge-only load electrically connected to the power storage unit via a switch.

[0287] The method for controlling the amount of stored electricity also includes:

[0288] a step of conducting the power storage unit and the discharge-only load by using the switch; and

[0289] The step of releasing the electric power of the power storage unit to the discharge-only load.

[0290] [E14]

[0291] The method for controlling the amount of stored electricity according to E11 is characterized in that:

[0292] The plasma processing apparatus further includes a discharge-only load electrically connected to the power storage unit via a switch.

[0293] The method for controlling the amount of stored electricity also includes:

[0294] a step of releasing the electric power of the electric power storage unit by supplying the electric power of the electric power storage unit to the electric power consumption component;

[0295] a step of conducting the power storage unit and the discharge-only load by using the switch; and

[0296] The step of releasing the electric power of the power storage unit to the discharge-only load.

[0297] It should be understood from the above description that the various embodiments of the present invention are described in this specification for the purpose of illustration, and various changes can be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limited, and the true scope and spirit are represented by the attached claims.

[0298] Description of Reference Numerals

[0299] 1… plasma processing apparatus, 10… chamber, 11… substrate supporting portion, 110… ground frame, 120… power feeding portion, 130… power feeding coil portion, 131… power feeding coil, 140… power receiving coil portion, 141… power receiving coil, 150… rectifying and smoothing portion, 160… power storage portion, 170… voltage control converter, 180… constant voltage control portion, 240… power consumption component, 300… high frequency power supply.

Claims

1. A plasma processing device, characterized in that: include: a plasma processing chamber; a substrate support disposed within the plasma processing chamber; A high frequency power source capable of generating high frequency electrical power; an electrode or antenna electrically connected to the high frequency power source and capable of receiving the high frequency electric power to generate plasma from a gas in the plasma processing chamber; an electric power consumption component disposed in the plasma processing chamber or in the substrate support; a ground frame which is grounded and surrounds the substrate support portion together with the plasma processing chamber; an electric storage unit electrically connected to the electric power consumption component and arranged in a space surrounded by the ground frame; a rectifying and smoothing unit arranged in the space surrounded by the ground frame, comprising: a power supply input connector including a first power supply input terminal and a second power supply input terminal and arranged to be accessible from the outside of the ground frame, and a rectifying circuit including a diode bridge connected between the power supply input connector and the power storage unit; a power supply output connector detachable from the power supply input connector, comprising a first power supply output terminal and a second power supply output terminal electrically connectable to the first power supply input terminal and the second power supply input terminal; and The power receiving coil is arranged outside the ground frame, is electrically connected to the power supply output connector, and can receive electric power from the power feeding coil through electromagnetic induction coupling.

2. The plasma processing device according to claim 1, wherein: The rectifying and smoothing unit further includes a discharge output connector that is accessible from the outside of the ground frame. The discharge output connector includes a first discharge output terminal and a second discharge output terminal respectively connected to two power supply lines connecting the power storage unit and the rectifier circuit to each other.

3. The plasma processing apparatus according to claim 1, wherein: The invention further includes a discharge-only load electrically connected to the power storage unit via a switch.

4. The plasma processing apparatus according to claim 2, wherein: The rectifying and smoothing unit further includes a display provided so as to be visible from the outside of the ground frame, and the display is capable of displaying a discharge state of the power storage unit.

5. The plasma processing device according to claim 4, characterized in that: The rectifying and smoothing unit further comprises: a voltage detector capable of detecting a voltage value of the power storage unit; and A control unit is configured to control the display so as to display a discharge state of the power storage unit based on the voltage value detected by the voltage detector.

6. The plasma processing apparatus according to claim 4, wherein: The display includes a semiconductor light emitting element.

7. The plasma processing apparatus according to claim 1, wherein: The rectifying and smoothing unit further comprises: a display configured to be viewed from outside the ground frame; a voltage detector capable of detecting a voltage value of the power storage unit; and A control unit is configured to control the display so as to display a charging state of the power storage unit based on the voltage value detected by the voltage detector.

8. The plasma processing apparatus according to claim 7, wherein: The display includes a semiconductor light emitting element.

9. The plasma processing apparatus according to any one of claims 4 to 8, characterized in that: The ground frame comprises: an optical window that enables viewing of the display from outside the ground frame; and A metal shielding component capable of opening and closing the optical window.

10. The plasma processing apparatus according to claim 1, wherein: The rectifying and smoothing unit further includes a smoothing circuit electrically connected between the rectifying circuit and the power storage unit.

11. A method for controlling the amount of stored electricity, characterized in that: A plasma processing device to which the method for controlling the amount of stored electricity can be applied includes: a plasma processing chamber; a substrate support disposed within the plasma processing chamber; A high frequency power source capable of generating high frequency electrical power; an electrode or antenna electrically connected to the high frequency power source and capable of receiving the high frequency electric power to generate plasma from a gas in the plasma processing chamber; an electric power consumption component disposed in the plasma processing chamber or in the substrate support; a ground frame which is grounded and surrounds the substrate support portion together with the plasma processing chamber; an electric storage unit electrically connected to the electric power consumption component and arranged in a space surrounded by the ground frame; a rectifying and smoothing unit arranged in the space surrounded by the ground frame, comprising: a power supply input connector including a first power supply input terminal and a second power supply input terminal and arranged to be accessible from the outside of the ground frame, and a rectifying circuit including a diode bridge connected between the power supply input connector and the power storage unit; a power supply output connector detachable from the power supply input connector, comprising a first power supply output terminal and a second power supply output terminal electrically connectable to the first power supply input terminal and the second power supply input terminal; and a power receiving coil, which is arranged outside the ground frame, is electrically connected to the power supply output connector, and can receive electric power from the power feeding coil through electromagnetic induction coupling, The method for controlling the amount of stored electricity comprises: A step of connecting a first power supply terminal and a second power supply terminal connected to a DC regulated power supply arranged outside the ground frame to the first power supply input terminal and the second power supply input terminal; and A step of supplying power from the DC regulated power supply to the power storage unit.

12. The method for controlling the amount of stored electricity according to claim 11, characterized in that: The rectifying and smoothing unit further includes a discharge output connector that is accessible from the outside of the ground frame. The discharge output connector includes a first discharge output terminal and a second discharge output terminal respectively connected to two power supply lines connecting the power storage unit and the rectifier circuit to each other. The method for controlling the amount of stored electricity also includes: A step of connecting a first discharge terminal and a second discharge terminal connected to a discharge load disposed outside the ground frame to the first discharge output terminal and the second discharge output terminal; and The step of releasing the electric power of the power storage unit to the discharge load.

13. The method for controlling the amount of stored electricity according to claim 11, wherein: The plasma processing apparatus further includes a discharge-only load electrically connected to the power storage unit via a switch. The method for controlling the amount of stored electricity also includes: a step of conducting the power storage unit and the discharge-only load by using the switch; and The step of releasing the electric power of the power storage unit to the discharge-only load.

14. The method for controlling the amount of stored electricity according to claim 11, wherein: The plasma processing apparatus further includes a discharge-only load electrically connected to the power storage unit via a switch. The method for controlling the amount of stored electricity also includes: a step of releasing the electric power of the electric power storage unit by supplying the electric power of the electric power storage unit to the electric power consumption component; a step of conducting the power storage unit and the discharge-only load by using the switch; and The step of releasing the electric power of the power storage unit to the discharge-only load.

Images