Wafer adsorption device, magnetron sputtering coating equipment and coating system

Abstract

The invention discloses a wafer adsorption device, magnetron sputtering coating equipment and a coating system, and belongs to the technical field of coating equipment.The wafer adsorption device comprises a supporting table, the adsorption face of the supporting table is smooth and used for bearing a wafer; a plurality of negative pressure air holes are formed in the adsorption surface of the supporting table, and when a wafer falls on the adsorption surface of the supporting table, the negative pressure air holes are completely covered; the side, outside the adsorption face, of the supporting table is connected with a vacuum assembly in a sealed mode, a vacuum cavity is formed in the vacuum assembly, and the vacuum cavity communicates with the vacuum environment through a negative pressure air hole. The device further comprises a driving assembly which is connected with the vacuum assembly. And the driving assembly operates to increase or decrease the volume of the vacuum cavity. The driving assembly operates to enlarge the volume of the closed vacuum cavity, so that the pressure of the vacuum cavity is reduced to form negative pressure with the vacuum environment, and the wafer is stably adsorbed on the adsorption surface of the supporting table under the action of the negative pressure without generating the negative pressure by other systems such as an external air exhaust system.

Description

Technical Field

[0001] The present invention relates to the technical field of coating equipment, and in particular to a wafer adsorption device, a magnetron sputtering coating equipment and a coating system. Background Art

[0002] Magnetron sputtering is a type of physical vapor deposition that can be used to prepare multiple materials such as metals, semiconductors, and insulators. During the coating process, the wafer is kept stable by adsorption technology to improve the coating accuracy. Adsorption technology includes electrostatic adsorption and vacuum adsorption, among which vacuum adsorption technology is a direction worthy of research.

[0003] In the prior art, a Chinese patent document with publication number CN115241118A discloses a wafer adsorption stage gas circuit, including a stage, a product placement area for placing product rounds is arranged on the upper surface of the stage, an adsorption area is also arranged on the upper surface of the stage, a negative pressure adsorption gas circuit is arranged on the stage, one end of the negative pressure adsorption gas circuit is arranged in the adsorption area, and the other end is connected to a negative pressure source through a pipeline, the negative pressure adsorption gas circuit includes an adsorption groove arranged on the upper surface of the adsorption area, the adsorption groove is connected to a vertical negative pressure channel arranged on the stage, and the vertical negative pressure channel is connected to a negative pressure source through a pipeline. The wafer adsorption stage gas circuit adsorbs the wafer through the negative pressure source.

[0004] For example, a Chinese patent document with publication number CN118571823A in the prior art discloses a wafer tray and a thin film deposition device, wherein the wafer tray comprises: a planar substrate, disposed on the upper surface of the wafer tray, provided with a first exhaust hole and a groove connected to the first exhaust hole, for vacuum adsorbing the wafer located on the planar substrate under high pressure conditions to inhibit the formation of a thin film on the back side thereof; and an electrode mesh, disposed under a certain plate of the planar substrate, for electrostatically adsorbing the wafer under low pressure conditions to inhibit and / or eliminate warping of the wafer.

[0005] It can be seen from the above-mentioned prior art that most of the existing wafer adsorption devices rely on a negative pressure source outside the vacuum environment to generate negative pressure to adsorb the wafer, and require a complex vacuum pressure detection system to balance the internal and external pressures of the vacuum environment, and the operation logic is complex. Summary of the invention

[0006] The purpose of the present invention is to provide a wafer adsorption device, a magnetron sputtering coating equipment and a coating system, so as to solve the problem that most wafer adsorption devices in the prior art rely on a negative pressure source outside the vacuum environment to generate negative pressure to adsorb the wafer, and require a complex vacuum pressure detection system to balance the internal and external pressures of the vacuum environment, and the operating logic is complex.

[0007] In order to achieve the above-mentioned purpose, the present invention provides a wafer adsorption device, which is placed in a vacuum environment and includes a support platform, whose adsorption surface is smooth for carrying wafers; the support platform is provided with a plurality of negative pressure pores on the adsorption surface, and when the wafer falls on the adsorption surface of the support platform, the negative pressure pores are completely covered; the support platform is sealed and connected with a vacuum component on one side outside the adsorption surface, and a vacuum cavity is provided inside the vacuum component, and the vacuum cavity is connected with the vacuum environment through the negative pressure pores; it also includes a driving component, and the driving component is connected to the vacuum component; the operation of the driving component increases or decreases the volume of the vacuum cavity.

[0008] Furthermore, the vacuum component includes a tubular elastic shell, and the vacuum chamber is located inside the elastic shell; the drive component is sealed and connected to the elastic shell, and the drive component drives the elastic shell to stretch or shrink.

[0009] Furthermore, the driving assembly includes a linear module, a linear slider is slidably connected to the linear module, and the linear slider is connected to the power element; a sealing end cover is connected to one side of the linear slider, and the sealing end cover is sealingly connected to the end of the elastic shell.

[0010] Furthermore, the elastic shell is of segmented design, including a first shell body and a second shell body, both of which are sealed and connected to the interconnection plate and communicated through the interconnection plate; the second shell body is connected to the adsorption surface through the negative pressure pores, and the first shell body is connected to the driving assembly.

[0011] Furthermore, the interconnection plate is installed with an isolation valve, the isolation valve is connected to a valve tube, one end of the valve tube is connected to the vacuum environment, and the other end is connected to the vacuum chamber, and the isolation valve controls the opening and closing of the valve tube.

[0012] Furthermore, a liquid cooling channel is provided inside the support platform, and the liquid cooling channel is isolated from the negative pressure air holes; the liquid cooling channel is connected to a water inlet pipe and a water outlet pipe for the inflow and outflow of cooling liquid.

[0013] Furthermore, the water inlet pipeline and the water outlet pipeline are arranged through the vacuum chamber and are isolated and sealed from the vacuum chamber.

[0014] Furthermore, a bracket is installed at a corresponding position of the support platform, and the bracket is used to hold up the wafer; the bracket is connected to a lifting component, and the lifting component drives the bracket to move up and down so that the wafer leaves or falls on the adsorption surface.

[0015] Furthermore, it also includes a vacuum electrode, which is electrically connected to the bracket.

[0016] The present invention also provides a magnetron sputtering coating device, comprising a machine platform, a machine base, a machine cover and the above-mentioned wafer adsorption device, wherein the machine base is installed on the machine platform, the machine base and the machine cover are connected and can form the vacuum environment inside after the two are combined, and the wafer adsorption device is partially placed in the vacuum environment; the machine cover is installed with a magnetic field cathode assembly; the machine base is provided with a sample inlet.

[0017] Furthermore, a support plate is installed on one side of the base, and a rib plate is correspondingly installed on the same side of the machine cover, and the rib plate and the support plate are rotatably connected via a rotating shaft and a shaft seat; a buffer component is connected between the rib plate and the support plate, and the buffer component provides buffering when the machine cover is flipped open.

[0018] Furthermore, the machine cover and the machine base are provided with a deviation correction device, the deviation correction device is located on a side relative to the rotating shaft, and the deviation correction device is used for docking and resetting the machine cover and the machine base when they are combined.

[0019] Furthermore, the machine platform is connected to the machine base via a leveling component, and the leveling component adjusts the lateral position and / or longitudinal position of the machine base.

[0020] The present invention also provides a coating system, comprising a transmission module and several of the above-mentioned magnetron sputtering coating devices, wherein the several magnetron sputtering coating devices are arranged around the transmission module; the transmission module is provided with a carrying part for carrying a wafer sample, the carrying part is circular when viewed from a top view, and the sample entrance is arranged in a straight line direction pointing to the center of the carrying part.

[0021] Compared with the existing known technology, the technical solution provided by the present invention has the following beneficial effects: A wafer adsorption device of the present invention, the vacuum component maintains the same pressure between the vacuum chamber and the vacuum environment through negative pressure pores. The adsorption surface of the tray is smooth, and when the wafer falls onto the adsorption surface of the tray, the negative pressure pores on the adsorption surface of the tray are completely covered, so that the vacuum chamber inside the vacuum component is isolated from the vacuum environment to form a closed vacuum chamber. The driving component is connected to the vacuum component, and the volume of the closed vacuum chamber is expanded by the operation of the driving component, so that the pressure of the closed vacuum chamber is reduced to form a negative pressure with the vacuum environment. Under the action of the negative pressure, the wafer is stably adsorbed on the adsorption surface of the tray. This device utilizes its own vacuum environment, and does not require other external exhaust systems to generate negative pressure. The operating logic is simpler and safer, and the internal and external pressures can be balanced without a complex vacuum pressure detection system.

[0022] In addition, the operation of the driving component increases or decreases the volume of the vacuum chamber. On the one hand, it can adjust the adsorption force of the tray on the wafer to meet the application of different scenarios; on the other hand, the driving component changes the volume of the vacuum chamber. When the adsorption force on the wafer is reduced, the wafer can be quickly taken and placed, thereby improving the coating efficiency.

[0023] It will be apparent that elements or features described above in the context of a single embodiment may be used alone or in combination in other embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In the drawings, the sizes and proportions do not represent the sizes and proportions of actual products. The drawings are merely illustrative, and some non-essential elements or features are omitted for clarity.

[0025] Figure 1 is a schematic structural diagram of a coating system in an embodiment of the present invention (viewed from above); Figure 2 is a schematic structural diagram of a coating device in an embodiment of the present invention; Figure 3 It is a structural schematic diagram of a machine platform and a machine base in an embodiment of the present invention; Figure 4 Schematic diagram of the machine base and the machine cover in the open state in the embodiment of the present invention; Figure 5 2 is a schematic diagram of the structure of a wafer adsorption device according to an embodiment of the present invention; Figure 6 Schematic diagram of the side view structure of the wafer adsorption device in the embodiment of the present invention Figure 7 Schematic diagram of the external structure of the support platform and the vacuum assembly in an embodiment of the present invention; Figure 8 yes Figure 7 A schematic diagram of a top view structure; Fig. 9 yes Figure 8 Sectional view at AA in the middle; Fig.10 is an enlarged cross-sectional view of the support platform in an embodiment of the present invention; Fig.11 is a schematic diagram of the structure of an isolation valve and a valve pipe in an embodiment of the present invention; Fig.12 is a schematic structural diagram of a bracket in an embodiment of the present invention; Fig.13 is a schematic structural diagram of a leveling assembly in an embodiment of the present invention; Fig.14 It is a schematic diagram of the connection structure between the machine base and the leveling assembly in an embodiment of the present invention.

[0026] Description of Reference Numerals 100, support platform; 101, adsorption surface; 110, negative pressure air hole; 120, liquid cooling channel; 130, water inlet pipeline; 140, water outlet pipeline; 150, bracket; 151, support ring; 152, support foot; 153, support plate; 154, support shaft; 155, insulating column; 160, lifting assembly; 161, lifting cylinder; 162, lifting bellows; 200, vacuum assembly; 210, vacuum chamber; 211, first cavity; 212, second cavity; 220, elastic shell; 221, first outer shell; 222, second outer shell; 230, barrier; 300, driving assembly; 310, linear module; 320, linear slider; 330, power element; 340, sealing end cover; 350, guide rod; 400, interconnection plate; 410, communication gas path; 420, isolation valve; 421, valve pipe; 430, vacuum electrode; 440, adjustment plate; 450, adjustment stud; 500, machine platform; 510, machine base; 511, support plate; 512, shaft seat; 513, rotating shaft; 514, sample inlet; 520, machine cover; 521, magnetic field cathode assembly; 522, rib plate; 530, buffer; 540, leveling assembly; 541, crossbeam; 542, leveling block; 543, leveling stud; 544, first adjusting foot cup; 545, second adjusting foot cup; 546, adjusting bolt; 551, correction plate; 552, correction pin; 600, transmission module; 610, bearing part. DETAILED DESCRIPTION

[0027] The present invention will be described in detail below with reference to the accompanying drawings. What is described here is only a preferred embodiment of the present invention, and those skilled in the art can think of other ways to implement the present invention based on the preferred embodiment, and other ways also fall within the scope of the present invention.

[0028] Example Reference Figure 1-Figure 14 , this embodiment provides a coating system, including a plurality of magnetron sputtering coating devices and a transmission module 600, and the plurality of magnetron sputtering coating devices are arranged around the transmission module 600. The transmission module 600 is used to carry and transmit wafer samples, and the wafer sample carrying portion 610 of the transmission module 600 is circular as a whole when viewed from a top view, and the plurality of coating devices are arranged in a scattered circular pattern. Each coating device is provided with a sample inlet 514, and the sample inlet 514 is arranged in a straight line direction pointing to the center of the carrying portion 610 of the transmission module 600. Compared with the existing transmission module 600 with a quadrilateral, hexagonal, octagonal or other shape of the carrying portion 610 structure, it can optimize the design space and reduce the floor space.

[0029] Among them, magnetron sputtering coating equipment is the core component of wafer coating, which is used to provide a vacuum environment. Specifically, Figure 2 , Figure 3 and Figure 4As shown, the magnetron sputtering coating equipment includes a machine platform 500, a machine base 510, a machine cover 520 and a wafer adsorption device. The machine base 510 is installed on the machine platform 500. The machine base 510 and the machine cover 520 are connected and a vacuum environment can be formed inside the two after they are combined. Specifically, the machine cover 520 and the machine base 510 are split-type designs. The machine base 510 and the machine cover 520 are rotatably connected by a rotating shaft 513. After breaking the vacuum, the machine cover 520 can be turned around the rotating shaft 513 to open the machine base 510. The wafer adsorption device is placed in a vacuum environment, that is, the wafer adsorption device is placed in a vacuum environment as a whole, and the parts or components of the wafer adsorption device that play an adsorption role can also be placed in a vacuum environment. Other parts or parts that do not affect the vacuum degree and do not play an adsorption role can be set outside the vacuum environment. The machine cover 520 is installed with a magnetic field cathode assembly 521. The magnetic field cathode assembly 521 is installed in the magnetic field cathode assembly 521 as the core component of this coating equipment and the target material, that is, the material to be deposited into a thin film. When high voltage is applied between the cathode and the anode, the argon gas is ionized to form plasma. The plasma is bound by the magnetic field in the magnetic field cathode assembly 521 and focused on the target surface. The plasma freely hits the target surface, causing the material particles to break away and move freely to the wafer surface to form a uniform film structure. The machine base 510 is provided with a sample inlet 514, and the wafer sample enters the coating device through the sample inlet 514.

[0030] During the coating process, the wafer is kept stable by the wafer adsorption device to improve the coating accuracy. In the prior art, the wafer is usually adsorbed by electrostatic adsorption or vacuum adsorption, and most of the domestic methods use vacuum adsorption solutions. Similarly, most traditional vacuum adsorption solutions rely on external negative pressure sources to generate negative pressure to adsorb the wafer, which has great limitations, so it is necessary to improve the existing vacuum adsorption solutions.

[0031] In some embodiments, Figure 5 , Figure 6 and Figure 7As shown, the wafer adsorption device is placed in a vacuum environment, including a support 100, whose adsorption surface 101 is smooth for carrying wafers. The adsorption surface 101 is the upper surface of the support 100, which is in direct contact with the wafer. And because the adsorption surface 101 is smooth enough, the tightness of the combination between the wafer and the adsorption surface 101 can be guaranteed when the wafer contacts the adsorption surface 101. The support 100 is provided with a plurality of negative pressure air holes 110 on the adsorption surface 101, and when the wafer falls on the adsorption surface 101 of the support 100, the negative pressure air holes 110 are completely covered; the negative pressure air holes 110 extend to the interior of the support 100, and can be set through the support 100, or form a gas channel inside the support 100. The negative pressure air holes 110 are in a lattice shape, a row shape or a ring shape on the adsorption surface 101. Specifically in this embodiment, the negative pressure air holes 110 are in a multi-circle ring shape, and the maximum outer diameter of the ring is smaller than the diameter of the wafer. The support platform 100 is sealed with a vacuum component 200 on one side outside the adsorption surface 101. Specifically, the vacuum component 200 is arranged on the side opposite to the adsorption surface 101, that is, on the lower side of the support platform 100. A vacuum chamber 210 is arranged inside the vacuum component 200. The vacuum chamber 210 is connected to the vacuum environment through the negative pressure pores 110, and the pressure of the vacuum chamber 210 is consistent with that of the vacuum environment. The wafer adsorption device also includes a driving component 300, which is connected to the vacuum component 200; the operation of the driving component 300 increases or decreases the volume of the vacuum chamber 210.

[0032] Through the above technical solution, when the wafer falls on the adsorption surface 101 of the cradle 100, the negative pressure pores 110 are completely covered, so that the vacuum chamber 210 inside the vacuum component 200 is completely isolated from the vacuum environment to form a closed chamber environment. The adsorption surface 101 is smooth enough to make the wafer fit completely with the adsorption surface 101, ensuring that the vacuum chamber 210 is completely isolated from the vacuum environment outside the vacuum chamber 210, and ensuring that the internal pressure of the vacuum chamber 210 is not disturbed by the external environment. The driving component 300 is operated to expand the volume of the closed vacuum chamber 210, and the pressure of the closed vacuum chamber 210 is correspondingly reduced to form a negative pressure with the vacuum environment. Under the action of the negative pressure, the wafer is stably adsorbed on the adsorption surface 101 of the cradle 100. It can be seen that the device changes the internal pressure of the vacuum chamber 210 by changing the volume of the vacuum chamber 210 to form a negative pressure with the vacuum environment of the device, without the need to generate negative pressure with the help of other external exhaust systems, the operation logic is simpler and safer, and the internal and external pressures can be balanced without a complex vacuum pressure detection system. In addition, the operation of the driving component 300 increases or decreases the volume of the vacuum chamber 210. On the one hand, it can adjust the adsorption force of the support 100 on the wafer to meet the application of different scenarios; on the other hand, the driving component 300 changes the volume of the vacuum chamber 210. When the adsorption force on the wafer is reduced, the wafer can be quickly taken and placed, thereby improving the coating efficiency.

[0033] It can be understood that the driving component 300 can change the volume of the vacuum chamber 210 of the vacuum component 200 by changing its shape from the outside of the vacuum component 200, so that the external shape expands or compresses to expand or shrink the volume of the vacuum chamber 210; the volume of the vacuum chamber 210 can also be changed directly from the inside of the vacuum component 200.

[0034] In one embodiment, if Figure 8 and Fig. 9 As shown, the vacuum assembly 200 includes a tubular elastic shell 220, and the vacuum chamber 210 is located inside the elastic shell 220; the driving assembly 300 is sealed and connected to the elastic shell 220, and the driving assembly 300 drives the elastic shell 220 to stretch or shrink. Specifically, the driving assembly 300 includes a linear module 310, and a linear slider 320 is slidably connected to the side of the linear module 310 facing the elastic shell 220 through a slide rail, and a guide rod 350 is provided in the length direction of the linear module 310. The linear slider 320 is sleeved on the guide rod 350 through a guide hole, which can improve the structural stability and movement stability of the linear slider 320. The linear slider 320 is connected to the output end of the power element 330. Specifically, the power element 330 is a cylinder, and the output end of the cylinder is connected to the bottom of the linear slider 320. When the cylinder stretches or shrinks, it drives the linear slider 320 to move back and forth along the length direction of the linear module 310. The linear slider 320 is connected to a sealing end cover 340 on the side facing the elastic shell 220. The sealing end cover 340 and the end of the elastic shell 220 are sealed and connected by a rubber ring or the sealing end cover 340 and the elastic shell 220 are both metal parts, and the two are welded. It should be noted that in addition to the cylinder, the power element 330 can also use hydraulic cylinders, electric cylinders and other components that can provide linear motion output. The elastic shell 220 adopts a bellows structure. The bellows has good structural strength and can also be retracted and retracted, which can drive the volume of the vacuum chamber 210 to change. Moreover, the vacuum bellows, as a connecting pipe fitting, is itself composed of a metal wave plate, which can achieve certain stretching, compression, bending and other functions, and can be used as an excellent vacuum moving component, which can ensure the isolation of the air pressure inside and outside the metal wave plate.

[0035] Furthermore, Fig. 9As shown, the elastic housing 220 is a segmented design, including a first housing 221 and a second housing 222, both of which are sealed and connected to the interconnection plate 400 and communicated through the interconnection plate 400. The first housing 221 and the second housing 222 are both bellows structures, and the ends of the first housing 221 and the second housing 222 are sealed and connected to the interconnection plate 400 through rubber rings and bolts. Specifically, the interconnection plate 400 is provided with a communication gas path 410, and the vacuum chamber 210 includes a first cavity 211 and a second cavity 212, the first cavity 211 is located inside the first housing 221, and the second cavity 212 is located inside the second housing 222, and the first cavity 211 and the second cavity 212 are communicated through the communication gas path 410. The first outer shell 221 is located below the second outer shell 222. The second outer shell 222 is connected to the adsorption surface 101 through the negative pressure pores 110. The first outer shell 221 is connected to the driving assembly 300. Specifically, the sealing end cover 340 is connected to the lower end of the first outer shell 221 to seal the first outer shell 221 so that the first cavity 211 maintains a vacuum degree.

[0036] It should be noted that in order to increase the volume variation range of the vacuum assembly 200 and thus expand the variation range of the magnitude of the wafer adsorption force, the position of the linear module 310 can be adjusted. Figure 6 As shown, an adjustment plate 440 is provided below the interconnection plate 400, and the upper end of the linear module 310 is connected to the lower side of the adjustment plate 440. The adjustment plate 440 and the interconnection plate 400 are connected by three adjustment studs 450, and the length of the adjustment studs 450 can adjust the spacing and parallelism between the adjustment plate 440 and the interconnection plate 400. The linear module 310 is installed on the lower side of the adjustment plate 440, and the linear module 310 can change the upper and lower positions as the position of the adjustment plate 440 changes.

[0037] After the wafer has been adsorbed and coated on the support 100, it is necessary to take the wafer away from the support 100. Before this, the negative pressure environment of the vacuum chamber 210 needs to be broken, so that the vacuum chamber 210 is connected with the external vacuum environment for pressure interaction, so that the pressure of the vacuum chamber 210 and the external vacuum environment are balanced, so that the wafer can be easily taken away. Figure 7 and Fig.11As shown, the interconnection board 400 is installed with an isolation valve 420, and the isolation valve 420 is connected to a valve pipe 421. One end of the valve pipe 421 is connected to the vacuum environment, and the other end is connected to the vacuum chamber 210. The isolation valve 420 controls the opening and closing of the valve pipe 421. When the isolation valve 420 is opened, the vacuum chamber 210 communicates and interacts with the vacuum environment through the valve pipe 421, so that the pressure of the vacuum chamber 210 and the vacuum environment is balanced, thereby facilitating the removal of the wafer. In some other embodiments, the vacuum assembly 200 includes a rigid shell, and the vacuum chamber 210 is arranged inside the rigid shell. The rigid shell can be a metal shell such as a stainless steel shell, an aluminum alloy shell, etc., or a non-metallic shell such as a ceramic shell. The drive assembly 300 is arranged inside the rigid shell, including a cylinder and a piston. The piston is connected to the output end of the cylinder, and the piston is in sealed contact with the inner wall of the rigid shell. The telescopic movement of the cylinder drives the piston to move in the rigid shell, thereby changing the volume of the vacuum chamber 210 in the rigid shell.

[0038] Wafer coating is a process in which atoms with kinetic energy are deposited on the wafer surface when bombarding the target. Heat is accumulated during coating. In order to ensure the stability of the deposited film, the wafer needs to be cooled synchronously. A continuously flowing coolant is introduced into the support 100. Through the principle of heat conduction, the coolant is transferred from the high temperature area to the low temperature area. Fig. 9 and Fig.10 As shown, by setting a liquid cooling channel 120 inside the support 100, the transferred heat is continuously taken away, so that the wafer is cooled. Furthermore, the liquid cooling channel 120 and the negative pressure air hole 110 are isolated from each other to avoid mutual interference between the liquid cooling channel 120 and the negative pressure air hole 110; the liquid cooling channel 120 is connected to the water inlet pipe 130 and the water outlet pipe 140 for the inflow and outflow of the cooling liquid. The water inlet pipe 130 and the water outlet pipe 140 are set through the vacuum chamber 210 and are isolated and sealed from the vacuum chamber 210. Fig. 9 It can be seen that a circle of baffles 230 is arranged on the periphery of the water inlet pipe 130 and the water outlet pipe 140 , and there is a distance between the baffles 230 and the elastic shell 220 , and the baffles 230 play a role in isolating and protecting the water inlet pipe 130 and the water outlet pipe 140 .

[0039] The wafer is input into the process chamber module through the transmission module 600, so that the center of the wafer is relatively coincident with the center of the pallet 100. However, during the wafer transmission process, the wafer will shift slightly and absorb impurities. Therefore, the operation sequence is the steps of wafer input, wafer loading, wafer cleaning, wafer placement, wafer absorption, coating, cooling, etc.

[0040] It is understandable that the wafer is not directly loaded on the pallet 100 when it is loaded, but a carrier is required to carry the wafer first. Fig.12As shown, a bracket 150 is installed at the corresponding position of the support platform 100, and the bracket 150 is used to hold up the wafer. The bracket 150 includes a support ring 151, and the support ring 151 is vertically connected to four legs 152 along its circumferential direction. The four legs 152 are evenly spaced and a guide slope is set at the upper end of each leg 152. The four points on the outer edge of the wafer are constrained by the guide slope, and the wafer itself falls under the influence of gravity. The guide slope is set with a special bevel to correct the position of the wafer during the falling process of the wafer, and the position of the wafer is also positioned when it falls to the bottom of the guide slope. It is convenient for the wafer to be accurately guided and positioned when it is placed on the legs 152, so that the center of the wafer is concentric with the center of the support ring 151. The bracket 150 is connected to the lifting assembly 160, and the lifting assembly 160 drives the bracket 150 to move up and down so that the wafer leaves or falls on the adsorption surface 101. Specifically, a support plate 153 is fixedly connected to one side of the support ring 151, and a support shaft 154 is connected to the lower end of the support plate 153. The support shaft 154 is connected to the output end of the lifting assembly 160. The operation of the lifting assembly 160 drives the support ring 151 to move up and down, so that the support ring 151 and the wafer fall on or leave the adsorption surface 101 of the support platform 100. The adsorption surface 101 is also a circular surface, and the center of the support ring 151 is concentric with the center of the adsorption surface 101. It should be noted that the lifting assembly 160 includes a lifting cylinder 161 and a lifting bellows 162. The output end of the lifting cylinder 161 is connected to the support shaft 154, and the lifting bellows 162 is sleeved on the outside of the support shaft 154. The upper end of the lifting bellows 162 is fixedly connected to the lower side of the interconnection plate 400, and the lower end is fixedly connected to the support shaft 154.

[0041] After the wafer is loaded, it is necessary to clean the impurities adsorbed on the wafer before coating, and the cleaning work requires charge support. The cleaning work requires the use of active particles in the plasma, such as ions, electrons, etc., to impact the surface of the wafer to be cleaned, peeling off the pollutants or microparticles adsorbed on the surface or reacting with organic matter on the surface of the wafer to generate volatile gases, which are discharged with the vacuum pump system, thereby achieving the purpose of cleaning the wafer surface. The wafer adsorption device also includes a vacuum electrode 430, which is installed on the interconnection board 400, and the vacuum electrode 430 is electrically connected to the bracket 150 through a wire. Specifically, the vacuum electrode 430 is fed with a negative voltage from the non-vacuum side, which is a DC or RF voltage with a power of 0-300W, and is transmitted to the support plate 153, the support ring 151, the support leg 152 and the wafer 3 in sequence through a wire; a fixed flow of high-purity argon gas is then introduced into the vacuum environment, and the vacuum system pumping speed is controlled to achieve the function of controlling the vacuum environment pressure, and the vacuum environment pressure is maintained in the range of 0.1Pa-10Pa. At this time, the concentration of argon ions in the cavity is appropriate and easy to ionize. The ionized argon gas is used to generate high-speed moving argon ions, which continuously bombard the wafer on the bracket 150 to play a cleaning role. It should be noted that the support plate 153 and the support shaft 154 are both made of metal materials, and the two are fixedly connected by an insulating column 155. The insulating column 155 is made of ceramic material, and the insulating column 155 electrically isolates the support plate 153 and the support shaft 154. Plasma cleaning requires the formation of an electric field difference. When argon gas is introduced into nearby charged objects, it will be ionized to produce positively charged argon ions. Conductive objects are negatively charged, and argon ions are attracted by the positive charge and focus near the wafer, forming a high-density plasma. The ceramic effect electrically isolates the charged objects from the non-cleaning objects. The charged objects are grounded to form an electric field difference.

[0042] After the coating device completes the wafer coating operation, it may be necessary to clean the inside of the cover 520 and the base 510, or replace the magnetic field cathode assembly 521 on the cover 520. Figure 2 and Figure 4As shown, the cover 520 is rotatably connected to the base 510, and the cover 520 can be flipped open. Specifically, a support plate 511 is installed on one side of the base 510, and a rib plate 522 is correspondingly installed on the same side of the cover 520. The rib plate 522 is rotatably connected to the support plate 511 through a rotating shaft 513 and a shaft seat 512, wherein the shaft seat 512 is installed on the upper side of the support plate 511, and the cover 520 can be flipped open around the axial direction of the rotating shaft 513. A buffer 530 is connected between the rib plate 522 and the support plate 511, and the buffer 530 provides buffering when the cover 520 is flipped open. The buffer 530 uses a gas spring, and the cover 520 is folded around the shaft seat 512 for 0-90 degrees. At this time, the gas spring cylinder and the support rod are in an extended state and no resistance is generated; when the cover 520 is turned and moved to 90-180 degrees, it is subject to gravity in a downward direction. At this time, the gravity acceleration is large. At this time, the gas spring cylinder and the support rod are in a slowly retracted state. The gas spring gas is compressed to produce damping, so that the cover 520 slowly falls to ensure safety. After folding 90 degrees and 180 degrees, the through hole on the rib plate 522 coincides with the through hole on the support plate 511, and fixing pins are inserted into the through holes of the two so that their positions are relatively fixed and in a stable state. Folding the cover 520 90 degrees is convenient for replacing and cleaning parts in the base 510; folding the cover 520 180 degrees makes the target material of the magnetic field cathode assembly 521 face upward, and the screws used to fix the target material are removed and the target material is disassembled and replaced using a lifting tool such as a crane.

[0043] Furthermore, in order to ensure the sealing performance of the cover 520 and the base 510 after they are combined, the cover 520 and the base 510 are provided with a correction device, which is located on one side relative to the rotating shaft 513 and is used for docking and resetting the cover 520 and the base 510 when they are combined. Figure 4 As shown, the correcting device includes a correcting plate 551 and a correcting pin 552. The correcting plate 551 is installed on the base 510, and the correcting pin 552 is installed on the cover 520. The correcting plate 551 is provided with an arc guide groove for use with the correcting pin 552, and is used to correct the misalignment problem caused by the mechanical matching gap when the cover 520 and the base 510 are closed. This structural coordination greatly improves the stability of the flip cover structure and the airtightness of the vacuum environment in the base 510.

[0044] It should be noted that in the coating system, the number of coating devices can be set to one or more, generally multiple, and four in the present embodiment. Multiple coating devices can deposit multiple materials at the same time to match the requirements of different process coatings. This design allows different coating materials to be deposited simultaneously or sequentially, thereby realizing the preparation of multiple film layers of multiple materials. The sample inlet 514 of the coating device and the transmission module 600 form an interconnected space. In order to facilitate the transportation of the wafer from the transmission module 600 to the sample inlet 514, a robotic arm is usually used for transmission. In order to improve the transmission efficiency and simplify the movement trajectory of the robotic arm, it is prioritized to ensure that the supporting portion 610 of the transmission module 600 and the sample inlet 514 are located in the same plane. Therefore, before the wafer sample is transmitted, the position of the sample inlet 514 of each coating device needs to be adjusted. Therefore, if Figure 2 and Figure 3 As shown, the machine platform 500 is connected to the machine base 510 via a leveling assembly 540, and the leveling assembly 540 adjusts the lateral position and / or longitudinal position of the machine base 510. Specifically, as Fig.13 and Fig.14 As shown, the leveling assembly 540 includes a crossbeam 541, which is installed on the upper side of the machine platform 500. The crossbeam 541 is provided with a T-slot along the length direction, and a leveling block 542 is provided in the T-slot. The length of the leveling block 542 is less than the length of the crossbeam 541, and the height of the leveling block 542 is less than the depth of the T-slot. The upper end of the leveling block 542 is connected with a leveling stud 543, and the upper end of the leveling stud 543 is installed with the bottom of the machine base 510 through a second adjustment foot cup 545, and the lower end of the leveling stud 543 is connected with the leveling block 542. The position of the second adjustment foot cup 545 relative to the crossbeam 541 is adjusted, and then the longitudinal position of the machine base 510 is adjusted. The lower part of the leveling stud 543 is threadedly connected with a first adjustment foot cup 544, and the first adjustment foot cup 544 can adjust the compression of the leveling block 542 in the T-slot. Adjusting bolts 546 are respectively provided at both ends of the length of the crossbeam 541. Under the premise that the leveling block 542 is loose relative to the T-slot, by adjusting the length of the adjusting bolts 546 relative to the two ends of the leveling block 542, the leveling block 542 can be pushed to move laterally in the T-slot, thereby changing the lateral position of the machine base 510. The so-called "lateral" refers to the direction parallel to the horizontal plane, and the "longitudinal" refers to the direction perpendicular to the horizontal plane. It should be noted that in this embodiment, two groups of leveling components 540 are provided, which are installed on opposite sides of the machine platform 500 to support the machine base 510. Four corresponding leveling studs 543 are provided, and each group of leveling components 540 is provided with two leveling studs 543. The four leveling studs 543 form a four-point support for the machine base 510, which has better stability.

[0045] In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "front", "rear", "left", "right", "up", "down", "top", "bottom", "inside", "outside", etc. are based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0046] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0047] The protection scope of the present invention is limited only by the claims. With the help of the teachings of the present invention, those skilled in the art will easily recognize that alternative structures of the structures disclosed in the present invention can be used as feasible alternative embodiments, and the embodiments disclosed in the present invention can be combined to generate new embodiments, which also fall within the scope of the appended claims.

Claims

1. A wafer adsorption device, placed in a vacuum environment, comprising a support platform (100), whose adsorption surface (101) is smooth and used for carrying wafers; the support platform (100) is provided with a plurality of negative pressure air holes (110) on the adsorption surface (101), and when the wafer falls on the adsorption surface (101) of the support platform (100), the negative pressure air holes (110) are completely covered; characterized in that: The support platform (100) is sealedly connected to a vacuum component (200) on one side outside the adsorption surface (101); a vacuum chamber (210) is provided inside the vacuum component (200); the vacuum chamber (210) is communicated with the vacuum environment via a negative pressure pore (110); and further comprises a drive component (300) connected to the vacuum component (200); the drive component (300) is operated to increase or decrease the volume of the vacuum chamber (210).

2. The wafer adsorption device according to claim 1, characterized in that: The vacuum component (200) comprises a tubular elastic shell (220), and the vacuum chamber (210) is located inside the elastic shell (220); the drive component (300) is sealedly connected to the elastic shell (220), and the drive component (300) drives the elastic shell (220) to stretch or contract.

3. The wafer adsorption device according to claim 2, characterized in that: The driving assembly (300) comprises a linear module (310), a linear slider (320) being slidably connected to the linear module (310), and the linear slider (320) being connected to a power element (330); a sealing end cover (340) being connected to one side of the linear slider (320), and the sealing end cover (340) being sealingly connected to an end of the elastic housing (220).

4. The wafer adsorption device according to claim 2, characterized in that: The elastic shell (220) is of segmented design, comprising a first shell body (221) and a second shell body (222), both of which are sealed and connected to the interconnection plate (400) and communicated through the interconnection plate (400); the second shell body (222) is connected to the adsorption surface (101) through the negative pressure pores (110), and the first shell body (221) is connected to the driving assembly (300).

5. The wafer adsorption device according to claim 4, characterized in that: The interconnection plate (400) is installed with an isolation valve (420), the isolation valve (420) is connected to a valve pipe (421), one end of the valve pipe (421) is connected to the vacuum environment, and the other end is connected to the vacuum chamber (210), and the isolation valve (420) controls the opening and closing of the valve pipe (421).

6. The wafer adsorption device according to claim 1, characterized in that: A liquid cooling channel (120) is provided inside the support platform (100), and the liquid cooling channel (120) and the negative pressure air hole (110) are isolated from each other; the liquid cooling channel (120) is connected to a water inlet pipeline (130) and a water outlet pipeline (140) for the inflow and outflow of cooling liquid.

7. The wafer adsorption device according to claim 6, characterized in that: The water inlet pipeline (130) and the water outlet pipeline (140) are arranged through the vacuum chamber (210) and are isolated and sealed from the vacuum chamber (210).

8. The wafer adsorption device according to claim 1, characterized in that: A bracket (150) is installed at a corresponding position of the support platform (100), and the bracket (150) is used to hold up a wafer; the bracket (150) is connected to a lifting component (160), and the lifting component (160) drives the bracket (150) to move up and down so that the wafer leaves or falls on the adsorption surface (101).

9. The wafer adsorption device according to claim 8, characterized in that: It also includes a vacuum electrode (430), wherein the vacuum electrode (430) is electrically connected to the bracket (150).

10. A magnetron sputtering coating device, characterized in that: The invention comprises a machine platform (500), a machine base (510), a machine cover (520) and a wafer adsorption device according to any one of claims 1 to 9, wherein the machine base (510) is installed on the machine platform (500), the machine base (510) and the machine cover (520) are connected and form the vacuum environment inside after the two are combined, and the wafer adsorption device is placed in the vacuum environment; the machine cover (520) is installed with a magnetic field cathode assembly (521); and the machine base (510) is provided with a sample inlet (514).

11. The magnetron sputtering coating device according to claim 10, characterized in that: A support plate (511) is installed on one side of the machine base (510), and a rib plate (522) is installed on the same side of the machine cover (520) correspondingly; the rib plate (522) and the support plate (511) are rotatably connected via a rotating shaft (513) and a shaft seat (512); a buffer component (530) is connected between the rib plate (522) and the support plate (511), and the buffer component (530) provides buffering when the machine cover (520) is flipped open.

12. The magnetron sputtering coating device according to claim 11, characterized in that: The machine cover (520) and the machine base (510) are provided with a deviation correction device, the deviation correction device is located on one side relative to the rotating shaft (513), and the deviation correction device is used for docking and resetting the machine cover (520) and the machine base (510) when they are combined.

13. The magnetron sputtering coating device according to claim 10, characterized in that: The machine platform (500) is connected to the machine base (510) via a leveling component (540), and the leveling component (540) adjusts the lateral position and / or longitudinal position of the machine base (510).

14. A coating system, characterized in that: It comprises a transmission module (600) and a plurality of magnetron sputtering coating devices as described in any one of claims 10 to 13, wherein the plurality of magnetron sputtering coating devices are arranged around the transmission module (600); the transmission module (600) is provided with a carrying portion (610) for carrying a wafer sample, the carrying portion (610) is circular when viewed from a top view, and the sample inlet (514) is arranged in a straight line direction pointing to the center of the carrying portion (610).

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