Method for manufacturing panel with high anti-aging performance and liquid crystal display panel

Abstract

The invention discloses a panel manufacturing method with high anti-aging performance and a liquid crystal display panel, and the method comprises the steps: obtaining all first pixels adjacent to a first switching through hole in a first color film substrate, and removing the pixels located outside an effective display area in the first pixels to obtain a second color film substrate; obtaining VITO of a specified area around a second switching through hole in the first thin film transistor substrate, and removing the VITO of the specified area to obtain a second thin film transistor substrate; and electrically connecting the second color film substrate with the second thin film transistor substrate through the first switching through hole and the second switching through hole to obtain the thin film transistor display panel. The moving distance of ions from the color film substrate side to the thin film transistor substrate side is greatly increased, the corrosion time is greatly prolonged, the load generated by the GOA output line due to the fact that ions are attracted and the heating value of the Gout line through hole position are reduced, and the corrosion time of the through hole ITO on the Gout line is prolonged.

Description

Technical Field

[0001] The present invention relates to the technical field of anti-aging of liquid crystal displays, and in particular to a method for manufacturing a panel with high anti-aging performance and a liquid crystal display panel. Background Art

[0002] Usually, the liquid crystal display panel is composed of a color filter substrate (CF), a thin film transistor substrate (TFT), a liquid crystal (LC) sandwiched between the color filter substrate and the thin film transistor substrate, and a sealant frame. Its molding process generally includes: the front-end array process (thin film, yellow light, etching and film stripping), the middle-end box (Cell) process (TFT substrate and CF substrate bonding) and the back-end module assembly process (driver IC and printed circuit board pressing). Among them, the front-end array process is mainly to form the TFT substrate to control the movement of liquid crystal molecules; the middle-end cell process is mainly to add liquid crystal between the TFT substrate and the CF substrate; the back-end module assembly process is mainly to press the driver IC and integrate it with the printed circuit board, thereby driving the liquid crystal molecules to rotate and display images.

[0003] For TFT-LCD displays designed with 6mask technology, clients have aging reliability test items. At present, the 85℃x85%RHx240H aging reliability test items basically show via corrosion, ink leakage and other phenomena. To solve this problem, all manufacturers basically use frame glue materials with better sealing and waterproof properties, but limited by the characteristics of the material itself, this problem cannot be completely solved. The reason is that, for TFT-LCDs currently designed with 6mask technology, the RGB pixels on the CF substrate side are very close to the GOA transfer vias on the TFT substrate side, and even partially overlap. Since the output voltage of the GOA circuit is negative most of the time, it will attract the positive ions in the RGB of the CF substrate to the TFT substrate side, thereby forming an electrolytic cell on the TFT substrate side, corroding the ITO on the GOA via. Summary of the invention

[0004] The existing TFT-LCD displays designed with the 6-mask process cannot pass the aging reliability test because the RGB pixels on the CF substrate side are very close to or even partially overlap the GOA transfer vias on the TFT substrate side, resulting in corrosion and ink leakage in the GOA transfer vias on the TFT substrate side.

[0005] In view of the above problems, a panel manufacturing method and a liquid crystal display panel with high anti-aging performance are proposed. By removing pixels outside the effective display area near the first transfer via in the first color filter substrate, only the pixels in the effective display area are retained, and the movement distance of ions from the color filter substrate side to the thin film transistor substrate side is greatly increased, and the corrosion time will be greatly prolonged. By removing VITO in a specified area around the second transfer via in the first thin film transistor substrate, the fixed electric field between the second transfer via position of the Gout line and the VITO is reduced; at the same time, the load of the Gout line due to attracting ions is reduced, the heat generated at the via position of the Gout line is reduced, and the corrosion time of the via ITO on the Gout line is prolonged.

[0006] In a first aspect, a method for manufacturing a panel with high anti-aging performance comprises:

[0007] Step 100, obtaining all first pixels adjacent to the first transfer via in the first color filter substrate, removing pixels outside the effective display area from the first pixels, and obtaining a second color filter substrate;

[0008] Step 200, obtaining VITO of a specified area around the second transfer via in the first thin film transistor substrate, removing the VITO of the specified area, and obtaining a second thin film transistor substrate;

[0009] Step 300: electrically connect the second color filter substrate to the second thin film transistor substrate through the first transfer via hole and the second transfer via hole to obtain a thin film transistor display panel.

[0010] In conjunction with the method for manufacturing a panel with high anti-aging performance according to the first aspect of the present invention, in a first possible implementation manner, step 100 includes:

[0011] Step 110: obtain the first color filter substrate, and make a first transfer via hole at a connection position between the first color filter substrate and the first thin film transistor substrate;

[0012] Step 120 : Acquire a first pixel near the first transfer via hole, where the first pixel includes a pixel located in an effective display area and a pixel in a non-effective display area.

[0013] In combination with the first possible implementation of the first aspect of the present invention, in a second possible implementation, step 100 further includes:

[0014] Step 130, uniformly coating photoresist on the first color filter substrate;

[0015] Step 140: Remove pixels in the non-effective display area by using photolithography.

[0016] In combination with the second possible implementation manner of the first aspect of the present invention, in a third possible implementation manner, step 140 includes:

[0017] Step 141, obtaining a first mask of a specified pattern, and using the first mask to expose the color filter substrate;

[0018] Step 142, developing the exposed area with a developer to obtain pixels of the exposed area;

[0019] Step 143, removing pixels in the exposure area by etching;

[0020] Step 144 , removing the remaining photoresist to obtain the second color filter substrate.

[0021] In conjunction with the method for manufacturing a panel with high anti-aging performance described in the first aspect of the present invention, in a fourth possible implementation manner, the step 200 includes:

[0022] Step 210: obtain the first thin film transistor substrate, and make a second transfer via hole at a connection position between the first thin film transistor substrate and the first color filter substrate;

[0023] Step 220: Obtain the VITO of a specified area around the second transfer via.

[0024] In combination with the fourth possible implementation manner of the first aspect of the present invention, in a fifth possible implementation manner, step 200 further includes:

[0025] Step 230, uniformly coating photoresist on the first thin film transistor substrate;

[0026] Step 240: Remove VITO in a specified area by photolithography.

[0027] In combination with the fifth possible implementation manner of the first aspect of the present invention, in a sixth possible implementation manner, step 240 includes:

[0028] Step 241, obtaining a first mask of a specified pattern, and using the second mask to expose the thin film transistor substrate;

[0029] Step 242, developing the exposed area with a developer to obtain VITO of the exposed area;

[0030] Step 243, removing the VITO in the exposure area by etching;

[0031] Step 244 , removing the remaining photoresist to obtain the second thin film transistor substrate.

[0032] In a second aspect, a liquid crystal display panel with high anti-aging performance adopts the method for manufacturing a panel with high anti-aging performance described in the first aspect, comprising:

[0033] A second color film substrate;

[0034] a second thin film transistor substrate;

[0035] A first transfer via and a second transfer via;

[0036] The second color filter substrate is electrically connected to the second thin film transistor substrate through a first transfer via hole and a second transfer via hole;

[0037] The second color filter substrate is obtained by acquiring all first pixels adjacent to the first transfer via in the first color filter substrate and removing pixels located outside the effective display area from among the first pixels;

[0038] The second thin film transistor substrate is obtained by obtaining VITO of a specified area around the second transfer via hole in the first thin film transistor substrate and removing the VITO of the specified area.

[0039] In conjunction with the liquid crystal display panel with high anti-aging performance described in the second aspect of the present invention, in a first possible implementation manner, the second color filter substrate is further:

[0040] The first color filter substrate is obtained, a first transfer via hole is made at a connection position between the first color filter substrate and the first thin film transistor substrate, a first pixel near the first transfer via hole is obtained, the first pixel includes a pixel located in an effective display area and a pixel in an ineffective display area, photoresist is uniformly coated on the first color filter substrate, and the pixel in the ineffective display area is removed by photolithography.

[0041] get.

[0042] In conjunction with the liquid crystal display panel with high anti-aging performance described in the second aspect of the present invention, in a first possible implementation manner, the second thin film transistor substrate is further provided by:

[0043] Obtain the first thin film transistor substrate, make a second transfer via hole at the connection position between the first thin film transistor substrate and the first color filter substrate, obtain VITO of a specified area around the second transfer via hole, evenly coat photoresist on the first thin film transistor substrate, and remove VITO of the specified area by photolithography

[0044] get.

[0045] By implementing the panel manufacturing method and liquid crystal display panel with high anti-aging performance described in the present invention, pixels located outside the effective display area near the first transfer via hole in the first color filter substrate are removed, and only pixels in the effective display area are retained, thereby greatly increasing the movement distance of ions from the color filter substrate side to the thin film transistor substrate side, and the time for corrosion to occur will be greatly extended. By removing VITO in a specified area around the second transfer via hole in the first thin film transistor substrate, the fixed electric field between the second transfer via hole position of the Gout line and VITO is reduced; at the same time, the load of the Gout line generated by attracting ions is reduced, the heat generated at the via hole position of the Gout line is reduced, and the time for the ITO of the via hole on the Gout line to corrode is extended. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to more clearly illustrate the scheme in the present application, a brief introduction is given below to the drawings required for use in the description of the embodiments of the present application. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0047] Figure 1 It is a flow chart of an embodiment of a method for manufacturing a panel with high anti-aging performance of the present application;

[0048] Figure 2 yes Figure 1 A flowchart of a specific implementation of S100;

[0049] Figure 3 yes Figure 2 A flowchart of a specific implementation method after S120;

[0050] Figure 4 yes Figure 3 A flowchart of a specific implementation of S140;

[0051] Figure 5 yes Figure 1 A flowchart of a specific implementation of S200;

[0052] Figure 6 yes Figure 5 A flowchart of a specific implementation method after S220;

[0053] Figure 7 yes Figure 6 A flowchart of a specific implementation of S240;

[0054] Figure 8 (a)- Figure 8 (b) Pixel distribution diagrams near the transfer via before and after pixel removal;

[0055] Fig. 9 (a)- Fig. 9 (b) VITO distribution diagrams near the transfer vias before and after VITO removal;

[0056] Figure 10-11 Schematic diagrams of pixel distribution near the transfer via before and after pixel removal. DETAILED DESCRIPTION

[0057] The following will be combined with the accompanying drawings in the invention to clearly and completely describe the technical solutions in the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, other embodiments obtained by ordinary technicians in this field without creative work are all within the scope of protection of the present invention.

[0058] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0059] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used in the specification of the application are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

[0060] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0061] Glossary

[0062] mask: mask

[0063] TFT-LCD: Thin Film Transistor Liquid Crystal Display

[0064] GOA: Array substrate gate drive circuit

[0065] Gout: Output line of array substrate gate drive circuit

[0066] VITO: Transparent common electrode layer

[0067] Vcom: Common electrode terminal

[0068] CF: color filter substrate

[0069] The existing TFT-LCD displays designed with the 6-mask process cannot pass the aging reliability test because the RGB pixels on the CF substrate side are very close to or even partially overlap the GOA transfer vias on the TFT substrate side, resulting in corrosion and ink leakage in the GOA transfer vias on the TFT substrate side.

[0070] For TFT-LCD displays designed with 6-mask process, the Gout output voltage of the thin film transistor (TFT) substrate is -10V for a long time, while the Vcom voltage of VITO is -1.5V for a long time. A fixed negative voltage difference is generated between Gout and Vcom, which attracts metal cations in the RGB on the color film substrate (CF) side. As the metal ions move in the electric field between Gout and Vcom, an electrolytic cell is formed. The ITO on the Gout via undergoes a reduction reaction with the metal cations, resulting in the corrosion of the ITO on the Gout. This results in the failure of the reliability test.

[0071] In view of the above problems, a panel manufacturing method with high anti-aging performance and a liquid crystal display panel are proposed.

[0072] In the first aspect, a method for manufacturing a panel with high anti-aging performance is provided. Figure 1 , Figure 1 This is a flow chart of an embodiment of a method for manufacturing a panel with high anti-aging performance of the present application; it includes:

[0073] Step 100: Obtain all first pixels adjacent to the first transfer via 102 in the first color filter substrate, remove the pixels outside the effective display area among the first pixels, and obtain a second color filter substrate.

[0074] In this embodiment, the first color filter substrate is a color filter substrate designed and produced using a 6-mask process, and it is necessary to remove pixels near the transfer vias to prevent ions from forming an electrolytic pool on the TFT substrate side.

[0075] In a preferred embodiment, if Figure 2 , Figure 2 yes Figure 1A flowchart of a specific implementation of S100; step 100 includes: step 110, obtaining a first color filter substrate, and making a first transfer via 102 at a connection position between the first color filter substrate and the first thin film transistor substrate; step 120, obtaining a first pixel near the first transfer via 102, the first pixel including a pixel located in an effective display area and a pixel in an ineffective display area.

[0076] In this embodiment, the first transfer via 102 is located on the CF side and is mainly used to connect with the second transfer via 103 to achieve the connection between the CF substrate and the TFT substrate.

[0077] In order to avoid corrosion problems, in this embodiment, pixels in the non-effective display area near the first transfer via 102 are removed.

[0078] In a preferred embodiment, if Figure 3 , Figure 3 yes Figure 2 A flowchart of a specific implementation after S120 in step 100; step 100 also includes: step 130, uniformly coating photoresist on the first color filter substrate; step 140, removing pixels in the non-effective display area by photolithography.

[0079] In this embodiment, the pixels near the transfer hole are removed by photolithography. Specifically, Figure 4 , Figure 4 yes Figure 3 A flowchart of a specific implementation of S140 in FIG. 1 ; step 140 includes:

[0080] Step 141, obtain a first mask of a specified pattern, and use the first mask to expose the color filter substrate; Step 142, use a developer to develop the exposed area to obtain pixels in the exposed area; Step 143, use an etching method to remove the pixels 101 in the exposed area; Step 144, remove the remaining photoresist to obtain a second color filter substrate.

[0081] like Figure 8 (a)- Figure 8 (b) Figure 8 (a)- Figure 8 (b) are the pixel distribution diagrams near the transfer via before and after the pixel is removed; in this embodiment, the first mask is transparent to the first transfer via 102 and the pixels near it (non-effective display area), allowing light to pass through, so that the photoresist can initiate a chemical reaction in these areas. The exposed area is dissolved with a developer to expose the pixel layer, and then the pixels in the exposed area are etched with an etching solution to remove the pixels 101 in these areas, such as Figure 10-11 ,like Figure 10-11 Schematic diagrams of pixel distribution near the transfer via before and after pixel removal.

[0082] In this embodiment, the pixel 101 close to the GOUT line of GOA is dug out, and only the pixel for display in the AA area is retained. In this way, the moving distance of ions from the CF side to the TFT side increases from 3um to about 100um, and the corrosion time will be greatly extended.

[0083] Step 200 : obtaining VITO in a specified area around the second transfer via 103 in the first thin film transistor substrate, and removing the VITO in the specified area to obtain a second thin film transistor substrate.

[0084] In this embodiment, the thin film transistor substrate is designed using a 6-mask process, and the VITO near the transfer via hole needs to be removed to prevent ions from forming an electrolytic cell on the thin film transistor substrate side.

[0085] In a preferred embodiment, if Figure 5 , Figure 5 yes Figure 1 A flowchart of a specific implementation of S200; step 200 includes: step 210, obtaining a first thin film transistor substrate, and making a second transfer via 103 at the connection position between the first thin film transistor substrate and the first color filter substrate; step 220, obtaining VITO of a specified area around the second transfer via 103.

[0086] In this embodiment, the second transfer via 103 is a transfer via located on the TFT side, and is mainly used to connect with the first transfer via 102 to achieve the connection between the CF substrate and the TFT substrate.

[0087] In order to avoid corrosion problems, in this embodiment, the VITO around the second transfer via 103 is removed.

[0088] In a preferred embodiment, if Figure 6 , Figure 6 yes Figure 5 A flowchart of a specific implementation after S220 in step 200; step 200 also includes: step 230, uniformly coating a photoresist on the first thin film transistor substrate; step 240, removing VITO in a specified area by photolithography.

[0089] In this embodiment, the pixels near the transfer hole are removed by photolithography. Specifically, Figure 7 , Figure 7 yes Figure 6Flow chart of a specific implementation of S240 in the embodiment; Step 240 includes: Step 241, obtaining a first mask of a specified pattern, and using a second mask to expose the thin film transistor substrate; Step 242, using a developer to develop the exposed area to obtain VITO of the exposed area; Step 243, removing the VITO of the exposed area by etching; Step 244, removing the remaining photoresist to obtain a second thin film transistor substrate, such as Fig. 9 (a)- Fig. 9 (b) Fig. 9 (a)- Fig. 9 (b) Distribution diagram of VITO104 near the transfer via before and after VITO removal.

[0090] Step 300, electrically connect the second color filter substrate to the second thin film transistor substrate through the first transfer via 102 and the second transfer via 103 to obtain a thin film transistor display panel. By removing the pixels outside the effective display area near the first transfer via 102 in the first color filter substrate, only the pixels in the effective display area are retained, and the moving distance of ions from the color filter substrate side to the thin film transistor substrate side is greatly increased, and the time for corrosion to occur will be greatly prolonged. By removing the VITO in the specified area around the second transfer via 103 in the first thin film transistor substrate, the fixed electric field between the position of the second transfer via 103 of the Gout line and the VITO is reduced; at the same time, the load of the Gout line due to attracting ions is reduced, and the heat generated at the position of the Gout line via is reduced, so that the time for the ITO of the via on the Gout line to corrode is prolonged.

[0091] In the second aspect, a liquid crystal display panel with high anti-aging performance adopts a panel manufacturing method with high anti-aging performance of the first aspect, including a second color filter substrate, a second thin film transistor substrate; a first transfer via 102 and a second transfer via 103; the second color filter substrate is electrically connected to the second thin film transistor substrate through the first transfer via 102 and the second transfer via 103; the second color filter substrate is obtained by obtaining all first pixels adjacent to the first transfer via 102 in the first color filter substrate and removing pixels located outside the effective display area of ​​the first pixels; the second thin film transistor substrate is obtained by obtaining VITO of a specified area around the second transfer via 103 in the first thin film transistor substrate and removing the VITO of the specified area.

[0092] Furthermore, the second color filter substrate is further provided by:

[0093] A first color filter substrate is obtained, and a first transfer via 102 is made at a connection position between the first color filter substrate and the first thin film transistor substrate. A first pixel near the first transfer via 102 is obtained. The first pixel includes a pixel located in an effective display area and a pixel located in an ineffective display area. Photoresist is uniformly coated on the first color filter substrate, and the pixels in the ineffective display area are removed by photolithography.

[0094] Furthermore, the second thin film transistor substrate is further obtained by obtaining the first thin film transistor substrate, making a second transfer via 103 at the connection position between the first thin film transistor substrate and the first color filter substrate, obtaining VITO of a specified area around the second transfer via 103, uniformly coating photoresist on the first thin film transistor substrate, and removing VITO of a specified area by photolithography.

[0095] The panel manufacturing method and liquid crystal display panel with high anti-aging performance of the present invention are implemented. By removing the pixels located outside the effective display area near the first transfer via 102 in the first color filter substrate and retaining only the pixels in the effective display area, the movement distance of ions from the color filter substrate side to the thin film transistor substrate side is greatly increased, and the time for corrosion to occur is greatly prolonged. By removing the VITO in a specified area around the second transfer via 103 in the first thin film transistor substrate, the fixed electric field between the position of the second transfer via 103 of the Gout line and the VITO is reduced; at the same time, the load of the Gout line generated by attracting ions is reduced, the heat generated at the position of the Gout line via is reduced, and the time for the ITO of the via on the Gout line to corrode is prolonged.

[0096] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for manufacturing a panel with high anti-aging performance, characterized in that: include: Step 100, obtaining all first pixels adjacent to the first transfer via in the first color filter substrate, removing pixels outside the effective display area from the first pixels, and obtaining a second color filter substrate; Step 200, obtaining the VI TO of a specified area around the second transfer via in the first thin film transistor substrate, removing the VI TO of the specified area, and obtaining a second thin film transistor substrate; Step 300: electrically connect the second color filter substrate to the second thin film transistor substrate through the first transfer via hole and the second transfer via hole to obtain a thin film transistor display panel.

2. The method for manufacturing a panel with high anti-aging performance according to claim 1, characterized in that: The step 100 comprises: Step 110: obtain the first color filter substrate, and make a first transfer via hole at a connection position between the first color filter substrate and the first thin film transistor substrate; Step 120 : Acquire a first pixel near the first transfer via hole, where the first pixel includes a pixel located in an effective display area and a pixel in a non-effective display area.

3. The method for manufacturing a panel with high anti-aging performance according to claim 2, characterized in that: The step 100 further includes: Step 130, uniformly coating photoresist on the first color filter substrate; Step 140: Remove pixels in the non-effective display area by using photolithography.

4. The method for manufacturing a panel with high anti-aging performance according to claim 3, characterized in that: The step 140 includes: Step 141, obtaining a first mask of a specified pattern, and using the first mask to expose the color filter substrate; Step 142, developing the exposed area with a developer to obtain pixels of the exposed area; Step 143, removing pixels in the exposure area by etching; Step 144 , removing the remaining photoresist to obtain the second color filter substrate.

5. The method for manufacturing a panel with high anti-aging performance according to claim 1, characterized in that: The step 200 comprises: Step 210: obtain the first thin film transistor substrate, and make a second transfer via hole at a connection position between the first thin film transistor substrate and the first color filter substrate; Step 220: Obtain the VI TO of a specified area around the second transfer via.

6. The method for manufacturing a panel with high anti-aging performance according to claim 5, characterized in that: The step 200 further includes: Step 230, uniformly coating photoresist on the first thin film transistor substrate; Step 240: Remove the VITO in the specified area by photolithography.

7. The method for manufacturing a panel with high anti-aging performance according to claim 6, characterized in that: The step 240 includes: Step 241, obtaining a first mask of a specified pattern, and using the second mask to expose the thin film transistor substrate; Step 242, developing the exposed area with a developer to obtain the VI TO of the exposed area; Step 243, removing the VI TO in the exposed area by etching; Step 244 , removing the remaining photoresist to obtain the second thin film transistor substrate.

8. A liquid crystal display panel with high anti-aging performance, using the method for manufacturing a panel with high anti-aging performance according to any one of claims 1 to 7, characterized in that: include: A second color film substrate; a second thin film transistor substrate; A first transfer via and a second transfer via; The second color filter substrate is electrically connected to the second thin film transistor substrate through a first transfer via hole and a second transfer via hole; The second color filter substrate is obtained by acquiring all first pixels adjacent to the first transfer via in the first color filter substrate and removing pixels located outside the effective display area from among the first pixels; The second thin film transistor substrate is obtained by obtaining the VI TO of a specified area around the second transfer via hole in the first thin film transistor substrate and removing the VI TO of the specified area.

9. The liquid crystal display panel with high anti-aging performance according to claim 8, characterized in that: The second color film substrate is further provided by: The first color filter substrate is obtained, a first transfer via hole is made at a connection position between the first color filter substrate and the first thin film transistor substrate, a first pixel near the first transfer via hole is obtained, the first pixel includes a pixel located in an effective display area and a pixel in an ineffective display area, photoresist is uniformly coated on the first color filter substrate, and the pixel in the ineffective display area is removed by photolithography. get.

10. The liquid crystal display panel with high anti-aging performance according to claim 8, characterized in that: The second thin film transistor substrate is further provided by: The first thin film transistor substrate is obtained, a second transfer via hole is made at a connection position between the first thin film transistor substrate and the first color filter substrate, a VI TO of a specified area around the second transfer via hole is obtained, a photoresist is uniformly coated on the first thin film transistor substrate, and the VI TO of the specified area is removed by photolithography. get.

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