Detection equipment and detection method

Abstract

The invention provides detection equipment and a detection method, and the detection method comprises the steps: carrying out multiple times of testing on a test transistor based on a signal input unit, gradually increasing or reducing the voltage of a test signal for controlling the on-off of the test transistor in the multiple times of testing, and outputting a test signal flowing through the test transistor each time by a light-emitting unit; the image acquisition unit acquires the gray scale brightness value of the light-emitting unit every time; according to the detection method, the display effect of the array substrate is obtained through the light-emitting unit, the gray-scale brightness curve is obtained through the image acquisition unit when the light-emitting unit is displayed (lightened), and the characteristic of the array substrate is represented on the basis of the gray-scale brightness curve. The gray scale brightness curve is used as a standard for representing the characteristics of the array substrate, so that the detection efficiency is improved, the result is direct and real, and the detection accuracy is improved.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a detection device and a detection method. Background Art

[0002] With the development of semiconductor technology, organic light-emitting diode (OLED) display devices are widely used in display devices such as televisions, computers, and mobile phones. During the production process of OLED, the thin film transistor (TFT) array substrate needs to be inspected to see if there are defects that affect the OLED display.

[0003] At present, the detection method of the array substrate is to characterize the characteristics of the thin film transistor (TFT) array substrate by testing the current, voltage and resistance parameters. However, there are problems such as indirect and unclear characterization and slow response speed. In addition, for the lighting condition of the display device (OLED), it is necessary to wait until the entire organic light emitting diode display device (OLED) manufacturing process is completed before detection, which makes the detection efficiency low. Summary of the invention

[0004] In view of this, the purpose of the present disclosure is to provide a detection device and a detection method. The detection method uses the grayscale brightness curve as a standard for characterizing the characteristics of the array substrate, which not only improves the detection efficiency, but also provides direct and true results, which is conducive to improving the detection accuracy.

[0005] Based on the above purpose, the present disclosure discloses a testing device for testing an array substrate, wherein the array substrate has a non-display area, and a test component is arranged in the non-display area. The testing device includes:

[0006] A signal input unit, electrically connected to the input terminal of the test component, and used to output a test signal to the test component, wherein the voltage of the test signal is adjustable;

[0007] A light emitting unit, electrically connected to the output end of the test assembly, and configured to output a light signal;

[0008] An image acquisition unit, used to acquire the grayscale brightness value of the light signal output by the light-emitting unit under different test signals;

[0009] The data processing unit is electrically connected to the image acquisition unit, generates a grayscale brightness curve from the grayscale brightness values ​​under different test signals, and characterizes the characteristics of the array substrate based on the grayscale brightness curve.

[0010] In one embodiment, the test component includes a test transistor and / or a test resistor.

[0011] The characteristics of the array substrate include characteristics of a test transistor and / or characteristics of a test resistor;

[0012] The data processing unit characterizes the characteristics of the test transistor and / or the characteristics of the test resistor based on the grayscale brightness curve.

[0013] In one embodiment, it further includes a current detection unit, which is electrically connected to the output end of the test component and is used to obtain the current value output by the test component each time;

[0014] The data processing unit is electrically connected to the current detection unit. The data processing unit generates a current curve based on current values ​​under different test signals. The data processing unit characterizes the characteristics of the array substrate based on the current curve.

[0015] In one embodiment, the test transistor includes a plurality of electrodes to be tested, and the plurality of electrodes to be tested include a gate, a source, and a drain;

[0016] Wherein, the signal input unit is electrically connected to the gate of the test transistor;

[0017] The light emitting unit is arranged in series between the source and the drain of the test transistor, and the light emitting unit is connected to the test transistor via a probe.

[0018] In one embodiment, a voltage sensing unit is further included, which is electrically connected to the output end of the test component, and the voltage sensing unit is used to obtain the voltage value output by the test component under different test signals.

[0019] Based on the same inventive concept, the present disclosure provides a detection method, which comprises the following steps:

[0020] Based on the signal input unit, the test signal is output to the test component multiple times, the voltage of each test signal is adjustable, the number of times N of outputting the test signal is determined according to the voltage difference ΔV of the test signal and the amount of each voltage change ΔV', and the calculation formula of the number of times N of outputting the test signal is N=ΔV / ΔV', where N is an integer greater than 1;

[0021] The light emitting unit outputs a light signal;

[0022] The image acquisition unit obtains the grayscale brightness value of the light signal output by the light emitting unit under different test signals;

[0023] The data processing unit generates a grayscale brightness curve based on the grayscale brightness values ​​under different test signals, and characterizes the characteristics of the array substrate based on the grayscale brightness curve.

[0024] In one embodiment, the outputting the test signal to the test component multiple times based on the signal input unit specifically includes:

[0025] The signal input unit outputs the test signal to the test transistor multiple times; and / or the signal input unit outputs the test signal to the test resistor multiple times;

[0026] The characteristic of the array substrate characterized based on the grayscale brightness curve specifically includes:

[0027] The data processing unit characterizes the characteristics of the test transistor and / or the characteristics of the test resistor based on the grayscale brightness curve.

[0028] In one embodiment, the data processing unit characterizes the characteristics of the test transistor based on the grayscale brightness curve, specifically including:

[0029] The data processing unit tests the parameters of the test transistor based on the grayscale brightness curve;

[0030] It is determined whether the parameter of the test transistor is within a threshold range. If so, the test transistor is not defective; if not, the test transistor is defective.

[0031] In one embodiment, the data processing unit characterizes the test resistance characteristics based on the grayscale brightness curve, specifically including:

[0032] The data processing unit characterizes the test resistor characteristics based on the actual grayscale brightness value in the grayscale brightness curve;

[0033] It is determined whether the actual grayscale brightness value is within the target grayscale brightness value range. If so, the test resistor is not defective; if not, the test resistor is defective.

[0034] In one embodiment, the current detection unit obtains the current value output by the test component under different test signals, and the data processing unit generates a current curve using the current value under different test signals. The data processing unit characterizes the characteristics of the array substrate based on the grayscale brightness curve and / or the current curve.

[0035] Compared with the prior art, the detection method provided by the present invention can quickly respond to the lighting (display) effect of the array substrate through the light-emitting unit. The image acquisition unit acquires the grayscale brightness value of the light-emitting unit. The data processing unit generates a grayscale brightness curve based on the grayscale brightness value. The grayscale brightness curve is used as a standard for characterizing the characteristics of the array substrate. This not only improves the detection efficiency, but also provides direct and true results, which is conducive to improving the detection accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions in the present disclosure or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0037] Figure 1It is a schematic diagram of a detection device in the prior art;

[0038] Figure 2 is a structural schematic diagram of an array substrate;

[0039] Figure 3 A schematic diagram of a detection device is provided for the first aspect of the present application;

[0040] Figure 4 A schematic diagram of a detection device is provided for the third aspect of the present application;

[0041] Figure 5 A schematic diagram of the detection method process is provided for the second aspect of this application;

[0042] Figure 6 The fourth aspect of the present application provides a schematic diagram of the detection method process. DETAILED DESCRIPTION

[0043] In order to make the objectives, technical solutions and advantages of the present disclosure more clearly understood, the present disclosure is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0044] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the embodiments of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0045] See also Figure 1 The inventors of the present application have discovered the following problems in the relevant technology during their long-term practical work: for the detection of array substrates, the current parameters, voltage parameters and test resistance parameters output during the test are currently used to characterize the characteristics of the array substrates. The characterization is not direct and obvious, the response speed is slow, and it is impossible to directly characterize the lighting condition of the array substrate.

[0046] Figure 1A schematic diagram of a detection device in the prior art, in which different test voltages are applied to the input end (gate) of the switching transistor for multiple times, and the characteristics of the array substrate are judged according to the current curve output by the switching transistor. However, the inventors have found through research that after the detection is completed using the above method, it cannot directly and effectively reflect the lighting condition of the array substrate, and judging the lighting effect of the array substrate by current parameters requires a large amount of data calculation and empirical analysis, during which errors in empirical judgment and errors in coefficient calculation may occur, thereby affecting the detection effect.

[0047] Next, the detection device and detection method proposed in the present disclosure are described in conjunction with the accompanying drawings.

[0048] like Figure 2 The structural schematic diagram of the array substrate is shown.

[0049] The detection device is used to detect the array substrate 100, wherein the array substrate 100 has a display area AA and a non-display area NA, a test component 110 (Test Element Group, TEG) is arranged in the non-display area NA, the test component includes a test transistor and a test resistor, a driving transistor and a resistor (here the resistor may include a line resistance between adjacent metal lines or a contact resistance between adjacent metal layers) are arranged in the display area AA, the test transistor has the same structure as the driving transistor, and the test resistor has the same structure as the resistor, so the test results of the test transistor and the test resistor can reflect the performance of the driving transistor and the resistor. The detection device in the present disclosure mainly detects the test component area (TEG area) in the non-display area of ​​the array substrate.

[0050] like Figure 3 Shown is a schematic diagram of the detection equipment proposed in the first aspect of the present application.

[0051] The detection device includes a signal input unit (not shown in the drawings), a light-emitting unit 10, an image acquisition unit 20 and a data processing unit (not shown in the drawings), wherein the signal input unit is electrically connected to the input end of the test component, and is used to output a test signal to the test component, and the voltage of the test signal is adjustable (specifically, the voltage of the test signal is gradually increased or decreased); the light-emitting unit 10 is electrically connected to the output end of the test component, and is used to output a light signal; the image acquisition unit 20 is used to collect the grayscale brightness value of the light signal output by the light-emitting unit under different test signals; the data processing unit is electrically connected to the image acquisition unit, and the data processing unit generates a grayscale brightness curve from the grayscale brightness values ​​under different test signals, and characterizes the characteristics of the array substrate based on the grayscale brightness curve.

[0052] It should be noted that the light emitting unit 10 in the embodiment is an OLED display device, and the image acquisition unit is a high-precision grayscale recognition camera.

[0053] In this embodiment, since the test component in this embodiment includes a test transistor TFT and a test resistor R, the detection device detects the test transistor TFT and the test resistor R respectively, and can also detect the test transistor TFT and the test transistor at the same time. The detection device and the test component are connected through probes, that is, the detection device needs three probes when detecting the test transistor TFT, and needs two probes when detecting the test resistor R. When the detection device has five probes, the test transistor TFT and the test resistor R can be detected at the same time. Here, two light-emitting units and two image acquisition units 20 are required, and the outer sides of each light-emitting unit 20 and the image acquisition unit need to be protected. The protective cover is used to block to avoid light signal interference between the two and affect the detection accuracy. The characteristics of the array substrate include the characteristics of the test transistor TFT and the characteristics of the test resistor R; the data processing unit characterizes the characteristics of the test transistor TFT and / or the characteristics of the test resistor based on the grayscale brightness curve. By testing the characteristics of the test resistor R, the characteristics of the test transistor TFT can be more accurately analyzed. For example, during the characteristic test of the test transistor TFT, when the test data is abnormal, if the characteristics of the test resistor R are normal, the influence of the test resistor R on the characteristics of the test transistor TFT can be eliminated, thereby making a more accurate analysis of the test data of the characteristics of the test transistor TFT.

[0054] In one embodiment, the data processing unit characterizes the characteristics of the test transistor based on the grayscale brightness curve, specifically including: the data processing unit characterizes the characteristics of the test transistor based on the grayscale brightness curve; determines whether the parameters of the test transistor are within a threshold range, if so, the test transistor is not defective, if not, the test transistor is defective, specifically, the characteristics of the test transistor specifically include the following parameters, such as threshold voltage (Vth), cut-off current (Ioff), source voltage (Vss), etc., wherein the threshold voltage generally refers to the input voltage corresponding to the midpoint of the turning zone where the output current in the transfer characteristic curve changes sharply with the input voltage. In the present disclosure, the grayscale brightness value of the light-emitting unit is used to characterize the characteristics of the array substrate, and the grayscale brightness value of the light-emitting unit is proportional to the current value output in the test transistor, that is, the larger the grayscale brightness value of the light-emitting unit, the larger the current output in the test transistor. The cut-off current usually refers to the leakage current passed by the test transistor when it is in the off state. The cut-off current in the present disclosure is the leakage current passed by the test transistor when the light-emitting unit is not lit. When the leakage current is within the threshold leakage current range, it can be judged that the test transistor is not defective; when the leakage current is not within the threshold leakage current range, it can be judged that the test transistor is defective. In this embodiment, the characteristics of the test transistor are characterized by the brightness grayscale curve, which not only has a fast detection speed but also has direct and true results, which is beneficial to improving the detection accuracy.

[0055] In this embodiment, the test transistor includes multiple electrodes to be tested, and the multiple motors to be tested include a gate G, a source S, and a drain D; wherein the signal input unit is electrically connected to the gate G of the test transistor; the light-emitting unit 10 is arranged in series between the source 2 and the drain D of the test transistor, and the light-emitting unit and the test transistor are connected through a probe; the signal input unit is connected to the gate G of the test transistor through a probe, and further, a voltage detection unit V is also connected in series between the source S and the drain D of the test transistor, and the voltage detection unit V is used to obtain the voltage parameters of the output of the test transistor each time.

[0056] In one embodiment, the data processing unit characterizes the characteristics of the test resistor R based on the grayscale brightness curve, specifically including: the data processing unit characterizes the characteristics of the test resistor R based on the actual grayscale brightness value in the grayscale brightness curve; determines whether the actual grayscale brightness value is within the target grayscale brightness value range, if so, the test resistor R is not defective, if not, the test resistor R is defective, wherein the target grayscale brightness value refers to the grayscale brightness value of the light-emitting unit collected by the image acquisition unit when the test resistor is a standard resistor; the actual grayscale brightness value refers to the grayscale brightness value of the light-emitting unit collected by the image acquisition unit during the test, and the voltage of the test signal of the target grayscale brightness value and the actual grayscale brightness value is the same. In this embodiment, to determine whether the test resistor is qualified, it is not necessary to test the specific parameters of the test resistor, but to determine whether the test resistor is qualified by the brightness grayscale value of the light-emitting unit. This design can avoid coefficient calculation errors and improve the efficiency of resistance characteristic detection.

[0057] In one embodiment, the detection device also includes a sensing voltage unit V, which is electrically connected to the output end of the test component. The sensing voltage unit V is used to obtain the voltage value output by the test component under different test signals. For example, when the detection device is connected to a test transistor, the sensing voltage unit is used to obtain the voltage value output by the test transistor under different test signals. For example, when the detection device is connected to a test resistor, the sensing voltage unit is used to obtain the voltage value output by the test resistor under different test signals.

[0058] like Figure 5 The figure shows a flow chart of the detection method proposed in the second aspect of the present application. The present disclosure provides a detection method of the above detection device, which includes the following steps:

[0059] Based on the signal input unit, the test signal is output to the test component multiple times, the voltage of each test signal is adjustable (such as the voltage is gradually increased or decreased), the number of times N of outputting the test signal is determined according to the voltage difference ΔV of the test signal and the amount of each voltage change ΔV', and the calculation formula of the number of times N of outputting the test signal is N=ΔV / ΔV', where N is an integer greater than 1;

[0060] The voltage at both ends of the test signal is generally -10V→10V, that is, the voltage difference of the test signal ΔV=20 (that is, [10-(-10)]), and the amount of voltage change ΔV' each time is 1V, so N=[10-(-10)] / 1=20 times. During the test, the voltage at both ends of the test signal can also be selected as -15V→15V or -20V→20V, and the amount of voltage change each time ΔV' can also be 0.5V or 1.5V. The voltage at both ends of the test signal and the amount of voltage change each time are determined according to the actual situation during the test, and no special requirements are made here.

[0061] It should be noted that, in the present embodiment, the multiple outputs of the test signal to the test component based on the signal input unit specifically include: the multiple outputs of the test signal to the test transistor based on the signal input unit; and / or the multiple outputs of the test signal to the test resistor based on the signal input unit, which can be specifically manifested as the detection device detecting the test transistor TFT and the test resistor R respectively, or detecting the test transistor TFT and the test transistor at the same time, the detection device and the test component are connected by probes, that is, the detection device needs three probes when detecting the test transistor TFT, and needs two probes when detecting the test resistor R, when the detection device has five probes, the test transistor TFT and the test resistor R can be detected at the same time, here two light-emitting units and two image acquisition units 20 are needed, and the outer side of each light-emitting unit and the image acquisition unit needs to be shielded by a protective cover to avoid light signal interference between the two and affect the detection accuracy.

[0062] The light emitting unit outputs a light signal;

[0063] The image acquisition unit obtains the grayscale brightness value of the light signal output by the light emitting unit under different test signals;

[0064] The data processing unit generates a grayscale brightness curve based on the grayscale brightness values ​​under different test signals, and characterizes the characteristics of the array substrate based on the grayscale brightness curve.

[0065] It should be noted that the detection method in this embodiment can quickly respond to the lighting (display) effect of the array substrate through the light-emitting unit, the image acquisition unit collects the grayscale brightness value of the light-emitting unit, and the data processing unit generates a grayscale brightness curve based on the grayscale brightness value. The grayscale brightness curve is used as a standard for characterizing the characteristics of the array substrate, which not only improves the detection efficiency, but also makes the results direct and true, which is conducive to improving the detection accuracy.

[0066] In this embodiment, the data processing unit characterizes the characteristics of the test transistor and / or the characteristics of the test resistor based on the grayscale brightness curve, and characterizes the characteristics of the array substrate by the characteristics of the test transistor and the characteristics of the test resistor, which is conducive to improving the accuracy of detection. Further, the data processing unit characterizes the characteristics of the test transistor based on the grayscale brightness curve, specifically including: the data processing unit characterizes the characteristics of the test transistor based on the grayscale brightness curve; determines whether the parameters of the test transistor are within the threshold range, if so, the test transistor is not defective, and if not, the test transistor is defective. Characterizing the characteristics of the test transistor by the brightness grayscale curve not only has a fast detection speed, but also has direct and true results, which is conducive to improving the accuracy of detection. Furthermore, the data processing unit characterizes the characteristics of the test resistor based on the grayscale brightness curve, specifically including: the data processing unit characterizes the characteristics of the test resistor based on the actual grayscale brightness value in the grayscale brightness curve; determines whether the actual grayscale brightness value is within the target grayscale brightness value range, if so, the test resistor is not defective, if not, the test resistor is defective, and determines whether the test resistor is qualified without testing the specific parameters of the test resistor, but rather determines whether the test resistor is qualified through the brightness grayscale value of the light-emitting unit. This design can avoid coefficient calculation errors and improve the efficiency of resistor characteristic detection.

[0067] like Figure 3 Shown is a schematic diagram of the detection device proposed in the third aspect of this application.

[0068] The detection device includes a signal input unit (not shown in the drawings), a light-emitting unit 10, an image acquisition unit 20, a current detection unit A and a data processing unit (not shown in the drawings), wherein the signal input unit is electrically connected to the input end of the test component, and is used to output a test signal to the test component, and the voltage of the test signal is adjustable (such as the voltage is gradually increased or decreased); the light-emitting unit 10 is electrically connected to the output end of the test component, and is used to output a light signal; the image acquisition unit 20 is used to collect the grayscale brightness value of the light signal output by the light-emitting unit under different test signals; the current detection unit is electrically connected to the output end of the test component, and is used to obtain the current value output by the test component under different test signals; the data processing unit is electrically connected to the image acquisition unit and the current detection unit, respectively, and the data processing unit generates a grayscale brightness curve from the grayscale brightness values ​​under different test signals, and the data processing unit generates a current curve based on the current values ​​under different test signals, and characterizes the characteristics of the array substrate based on the grayscale brightness curve and / or the current curve.

[0069] It should be noted that, in this embodiment, the light-emitting unit 10 and the current detection unit A are respectively connected to the test component through probes, such as the light-emitting unit 10 and the current detection unit A are respectively connected through probe test transistors, such as the light-emitting unit 10 and the current detection unit A are respectively connected through probe test resistors.

[0070] In this embodiment, the current curve and the grayscale brightness curve are used together to characterize the characteristics of the array substrate, which plays a double protection role. For example, when the grayscale brightness curve is used as the standard to characterize the characteristics of the array substrate, when the characteristics of the array substrate are abnormal, if the current curve is used as the standard to characterize the basic characteristics of the array, the characteristics of the array substrate are normal, then it can be explained that an error has occurred in a certain link of the detection device during the detection process, and the detection device needs to be tested and modified. Such a design is conducive to improving the accuracy of detection.

[0071] like Figure 6 What is shown is a schematic diagram of the detection method process proposed in the fourth aspect of this application.

[0072] The detection method in this embodiment comprises the following steps:

[0073] Based on the signal input unit, the test signal is output to the test component multiple times, the voltage of each test signal is adjustable (such as the voltage is gradually increased or decreased), the number of times N of outputting the test signal is determined according to the voltage difference ΔV of the test signal and the amount of each voltage change ΔV', and the calculation formula of the number of times N of outputting the test signal is N=ΔV / ΔV', where N is an integer greater than 1;

[0074] The light emitting unit outputs a light signal;

[0075] The image acquisition unit obtains the grayscale brightness value of the light signal output by the light emitting unit under different test signals;

[0076] The current detection unit obtains the current value output by the test component under different test signals;

[0077] The data processing unit generates a grayscale brightness curve from grayscale brightness values ​​under different test signals, generates a current curve from current values ​​under different test signals, and characterizes the characteristics of the array substrate based on the grayscale brightness curve and / or the current curve.

[0078] It should be noted that, in this embodiment, the grayscale brightness curve and the current curve are used to jointly characterize the characteristics of the array substrate, which plays a double guarantee role and is conducive to improving the accuracy of detection.

[0079] The embodiments of the present disclosure are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present disclosure should be included in the scope of protection of the present disclosure.

[0080] It should be noted that the above describes some embodiments of the present disclosure. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the above embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0081] The embodiments of the present disclosure are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present disclosure should be included in the scope of protection of the present disclosure.

Claims

1. A testing device for testing an array substrate, wherein the array substrate has a non-display area, and a test component is arranged in the non-display area, characterized in that: include: A signal input unit, electrically connected to the input terminal of the test component, and used to output a test signal to the test component, wherein the voltage of the test signal is adjustable; A light emitting unit, electrically connected to the output end of the test assembly, and configured to output a light signal; An image acquisition unit, used for acquiring grayscale brightness values ​​of light signals output by the light emitting unit under different test signals; The data processing unit is electrically connected to the image acquisition unit, generates a grayscale brightness curve based on the grayscale brightness values ​​under different test signals, and characterizes the characteristics of the array substrate based on the grayscale brightness curve.

2. The detection device according to claim 1, characterized in that: The test component includes a test transistor and / or a test resistor; The characteristics of the array substrate include characteristics of a test transistor and / or characteristics of a test resistor; The data processing unit characterizes the characteristics of the test transistor and / or the characteristics of the test resistor based on the grayscale brightness curve.

3. The detection device according to claim 1, characterized in that: It also includes a current detection unit, which is electrically connected to the output end of the test component and is used to obtain the current value output by the test component; The data processing unit is electrically connected to the current detection unit. The data processing unit generates a current curve based on current values ​​under different test signals. The data processing unit characterizes the characteristics of the array substrate based on the current curve.

4. The detection device according to claim 1, characterized in that: The test transistor includes a plurality of electrodes to be tested, and the plurality of electrodes to be tested include a gate, a source and a drain; Wherein, the signal input unit is electrically connected to the gate of the test transistor; The light emitting unit is arranged in series between the source and the drain of the test transistor, and the light emitting unit is connected to the test transistor via a probe.

5. The detection device according to claim 1, characterized in that: It also includes a voltage sensing unit, which is electrically connected to the output end of the test component, and the voltage sensing unit is used to obtain the voltage value output by the test component under different test signals.

6. A detection method, characterized in that: The steps include: Based on the signal input unit, the test signal is output to the test component multiple times, the voltage of the test signal is adjustable each time, the number of times N of outputting the test signal is determined according to the voltage difference ΔV of the test signal and the amount of voltage change ΔV' each time, and the calculation formula of the number of times N of outputting the test signal is N=ΔV / ΔV', where N is an integer greater than 1; The light emitting unit outputs a light signal; The image acquisition unit acquires the grayscale brightness value of the light signal output by the light emitting unit under different test signals; The data processing unit generates a grayscale brightness curve based on the grayscale brightness values ​​under different test signals, and characterizes the characteristics of the array substrate based on the grayscale brightness curve.

7. The detection method according to claim 6, characterized in that: The method of outputting the test signal to the test component multiple times based on the signal input unit specifically includes: The signal input unit outputs the test signal to the test transistor multiple times; and / or the signal input unit outputs the test signal to the test resistor multiple times; The characteristic of the array substrate characterized based on the grayscale brightness curve specifically includes: The data processing unit characterizes the characteristics of the test transistor and / or the characteristics of the test resistor based on the grayscale brightness curve.

8. The detection method according to claim 7, characterized in that: The data processing unit characterizes the characteristics of the test transistor based on the grayscale brightness curve, specifically including: The data processing unit tests the parameters of the test transistor based on the grayscale brightness curve; It is determined whether the parameter of the test transistor is within a threshold range. If so, the test transistor is not defective; if not, the test transistor is defective.

9. The detection method according to claim 7, characterized in that: The data processing unit characterizes the test resistance characteristics based on the grayscale brightness curve and specifically includes: The data processing unit characterizes the test resistor characteristics based on the actual grayscale brightness value in the grayscale brightness curve; It is determined whether the actual grayscale brightness value is within the target grayscale brightness value range. If so, the test resistor is not defective; if not, the test resistor is defective.

10. The detection method according to claim 6, characterized in that: The current detection unit obtains the current value output by the test component under different test signals, and the data processing unit generates a current curve from the current value under different test signals. The data processing unit characterizes the characteristics of the array substrate based on the grayscale brightness curve and / or the current curve.

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