Integrated processing equipment and integrated processing method of wafer

Abstract

The invention discloses wafer integrated processing equipment and an integrated processing method. The integrated processing equipment of the wafer comprises a pretreatment cavity used for carrying out plasma pretreatment on a substrate; the cobalt deposition cavity is used for performing cobalt deposition treatment on the substrate; the aluminum nitride cavity is used for carrying out aluminum nitride deposition treatment on the wafer; the oxygen-doped silicon carbide cavity is used for performing oxygen-doped silicon carbide deposition treatment on the wafer; and the transmission device is connected with the pretreatment cavity, the cobalt deposition cavity, the aluminum nitride cavity and the oxygen-doped silicon carbide cavity, and is used for driving the wafer to flow among the pretreatment cavity, the cobalt deposition cavity, the aluminum nitride cavity and the oxygen-doped silicon carbide cavity in a vacuum environment. According to the invention, the wafer processing process is integrated in the same platform equipment, the wafer can continue to enter the aluminum nitride cavity for deposition in a vacuum state after cobalt deposition treatment, and then enters the oxygen-doped silicon carbide cavity for deposition, so that cobalt can be prevented from being exposed in an air environment, and the risks of surface oxidation and particle pollution are reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor element processing, and in particular to an integrated processing device and an integrated processing method for a wafer. Background Art

[0002] As the integration of chips increases, the size of semiconductor components decreases, and the area of ​​the conductive structure copper (Cu) on the semiconductor components decreases, which will cause the current density to increase, thereby enhancing the electromigration ability; and the dielectric layer on the semiconductor component is made of ultra-low-k dielectric material, which may contain multiple pores, and the diffusion coefficient of copper atoms in the dielectric layer is large, which can easily cause line short circuits due to the diffusion of copper in the dielectric layer. In advanced semiconductor processes, in order to avoid copper diffusion, cobalt (Co) with high density and low resistivity is used as a metal barrier layer. The resistivity of cobalt is about 3 times that of copper, and the electron mobility is about half of that of copper. Therefore, cobalt, as a metal layer material, constitutes short-range connections between transistors and within transistors. The improved interconnection lines will help the semiconductor industry overcome line problems and further reduce the size of transistors.

[0003] As the semiconductor process advances to smaller nanometers, not only the number of metal wiring layers is increasing, but the distance between wires is also shrinking. When electronic signals are transmitted between metal wiring layers with a large number of layers, resistance-capacitance delay (RC Delay) will occur, which will seriously reduce the speed of semiconductor components. Therefore, reducing the resistance-capacitance delay time, increasing the operating speed of semiconductor components, and reducing the impact of the barrier layer on the increase in resistance are the main reasons for using cobalt in advanced processes. In summary, cobalt can be combined with aluminum nitride and oxygen-doped silicon carbide at a thinner thickness. Its excellent density can prevent the diffusion of copper, and its low resistance can reduce resistance-capacitance delay.

[0004] However, in the process of cobalt deposition-aluminum nitride deposition-oxygen-doped silicon carbide deposition, after the cobalt deposition process is carried out on the cobalt deposition machine and before it reaches the aluminum nitride deposition machine, a separate ammonia plasma treatment chamber is required to perform surface treatment on the cobalt to facilitate the subsequent adsorption and deposition of aluminum nitride, which consumes transportation costs and has high production costs. In addition, it is easy to be exposed to the air during transportation, and there is a risk of surface oxidation and particle contamination. Summary of the invention

[0005] The purpose of the present invention is to provide an integrated processing device and an integrated processing method for wafers, aiming to solve the problems of high transportation cost and production cost in the processing process of cobalt deposition-aluminum nitride deposition-oxygen-doped silicon carbide deposition on wafers in the prior art.

[0006] In order to solve the above technical problems, the object of the present invention is achieved through the following technical solutions: providing an integrated processing device for wafers, comprising:

[0007] A pretreatment chamber, used for performing plasma pretreatment on the substrate;

[0008] A cobalt deposition chamber, used for performing cobalt deposition processing on a substrate and obtaining a wafer;

[0009] An aluminum nitride chamber, used for performing aluminum nitride deposition processing on wafers;

[0010] An oxygen-doped silicon carbide chamber is used to perform oxygen-doped silicon carbide deposition processing on wafers;

[0011] The transmission device is connected to the pretreatment chamber, the cobalt deposition chamber, the aluminum nitride chamber and the oxygen-doped silicon carbide chamber, and is used to drive the wafer to flow among the pretreatment chamber, the cobalt deposition chamber, the aluminum nitride chamber and the oxygen-doped silicon carbide chamber under a vacuum environment.

[0012] Furthermore, the integrated processing equipment of the wafer also includes:

[0013] A loading device, connected to the transmission device and used to temporarily store substrates to be deposited and wafers after deposition;

[0014] The front-end control device is located at one end of the loading device away from the transmission device and serves as the control center of the entire equipment.

[0015] Furthermore, a transmission cavity and a transmission mechanism are provided inside the transmission device;

[0016] The transmission cavity is respectively connected to the loading device, the pretreatment chamber, the cobalt deposition chamber, the aluminum nitride chamber and the oxygen-doped silicon carbide chamber;

[0017] The transmission mechanism is used to use the transmission cavity as a transfer hub to drive the wafer to flow between the loading device, the pretreatment chamber, the cobalt deposition chamber, the aluminum nitride chamber and the oxygen-doped silicon carbide chamber.

[0018] Furthermore, the integrated processing equipment of the wafer also includes:

[0019] A plurality of electrically controlled valves are respectively arranged at the connecting points between the transmission cavity and the loading device, the pretreatment chamber, the cobalt deposition chamber, the aluminum nitride chamber and the oxygen-doped silicon carbide chamber and are used to control the opening and closing of each connecting point.

[0020] Furthermore, the integrated processing equipment of the wafer also includes:

[0021] A ventilation component is connected to the transmission cavity and is used to circulate ventilation inside the transmission cavity under a vacuum environment to reduce the oxygen content in the transmission cavity.

[0022] Furthermore, the ventilation component comprises:

[0023] an air inlet channel connected to the transmission cavity and used to input gas into the transmission cavity;

[0024] An outlet channel connected to the transmission cavity and used for the transmission cavity to output gas;

[0025] The air extraction member is connected to an end of the air outlet channel away from the transmission cavity.

[0026] Furthermore, the ventilation component also includes an oxygen detector, which is arranged on the air outlet channel and is used to detect the oxygen content of the gas extracted through the air outlet channel during cyclic ventilation.

[0027] Furthermore, the ventilation component also includes a valve component, which is arranged on the air outlet channel and is used to control the opening and closing of the air outlet channel and the oxygen detector.

[0028] The embodiment of the present invention further provides a wafer integrated processing method, which is applied to the wafer integrated processing equipment as described above.

[0029] Controlling the transmission device to drive the substrate to the pretreatment chamber for plasma purge treatment to remove metal oxides on the surface of the substrate;

[0030] Controlling the transmission device to drive the substrate after the plasma purging process to be transmitted to the cobalt deposition chamber for cobalt deposition process, and obtaining a wafer;

[0031] Controlling the transmission device to drive the wafer after the cobalt deposition process to the aluminum nitride chamber for aluminum nitride deposition process;

[0032] The transmission device is controlled to drive the wafer after the aluminum nitride deposition process to be transmitted to the oxygen-doped silicon carbide chamber for oxygen-doped silicon carbide deposition process to obtain a wafer with a multi-layer film formed thereon.

[0033] An embodiment of the present invention further provides a wafer integrated processing method, which is applied to the wafer integrated processing equipment as described above, comprising:

[0034] The pumping member is operated at low power, so that the air inlet channel inputs oxygen-free gas into the transmission cavity at a low rate, and the gas in the transmission cavity is pumped out through the air outlet channel;

[0035] detecting the oxygen content of the gas extracted through the gas outlet channel by the oxygen detector;

[0036] When it is detected that the oxygen content exceeds the standard, the electric control valve is controlled to close and the wafer transmission is stopped, and the vacuum element is controlled to operate at high power to allow high-rate ventilation in the transmission cavity until it is detected that the oxygen content meets the standard and then switches back to low-power operation.

[0037] The beneficial effects of the embodiments of the present invention are as follows: the processing technology of cobalt deposition-aluminum nitride deposition-oxygen-doped silicon carbide deposition of the wafer is integrated into the same platform equipment, and the wafer can continue to be in a vacuum state after the cobalt deposition treatment to be transferred to the aluminum nitride chamber for aluminum nitride deposition, and after the aluminum nitride deposition treatment, the wafer can continue to be in a vacuum state to be transferred to the oxygen-doped silicon carbide chamber for oxygen-doped silicon carbide deposition; the whole process can avoid cobalt exposure to the air environment, reducing the risk of surface oxidation and particle contamination. And after the integrated processing, the time consumption of transporting from the cobalt deposition machine to the aluminum nitride machine and the oxygen-doped silicon carbide machine is saved, and the transportation cost and time are reduced, which has the advantages of optimizing the efficiency of chamber use, optimizing the process and saving costs. In addition, the footprint of the wafer integrated processing equipment is reduced, and the footprint of the dust-free processing site is also reduced.

[0038] During the process, the embodiment of the present invention also monitors the oxygen concentration of the wafer transmission environment and designs the logic control of the wafer transmission, so as to ensure that the transmission environment of the wafer meets the standards when it flows and interacts between the chambers, so as to achieve quality control of the wafer after deposition reaction. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0040] Figure 1 A schematic structural diagram of an integrated wafer processing device provided by an embodiment of the present invention;

[0041] Figure 2 Schematic diagram of the process of integrated processing method of wafer provided by the embodiment of the present invention Figure 1 ;

[0042] Figure 3 Schematic diagram of the process of integrated processing method of wafer provided by the embodiment of the present invention Figure 2 .

[0043] Description of the symbols in the figure:

[0044] 1. Front-end control device; 2. Loading device; 3. Pretreatment chamber; 4. Cobalt deposition chamber; 5. Aluminum nitride chamber; 6. Oxygen-doped silicon carbide chamber; 7. Transmission device; 8. Electric control valve; 9. Air inlet channel; 10. Air outlet channel; 11. Vacuum element; 12. Oxygen detector; 13. Air inlet source; 14. Automatic valve; 15. Manual valve. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0046] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0047] It should also be understood that the terms used in this specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention and the appended claims, the singular forms "a", "an" and "the" are intended to include plural forms unless the context clearly indicates otherwise.

[0048] It should be further understood that the term "and / or" used in the present description and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0049] See also Figure 1 , an embodiment of the present invention provides an integrated processing device for wafers, comprising:

[0050] A pretreatment chamber 3, used for performing ion pretreatment on the substrate;

[0051] A cobalt deposition chamber 4, used for performing cobalt deposition processing on a substrate and obtaining a wafer;

[0052] An aluminum nitride chamber 5, used for performing aluminum nitride deposition processing on the wafer;

[0053] The oxygen-doped silicon carbide chamber 6 is used for performing oxygen-doped silicon carbide deposition processing on the wafer;

[0054] The transmission device 7 is connected to the pretreatment chamber 3, the cobalt deposition chamber 4, the aluminum nitride chamber 5 and the oxygen-doped silicon carbide chamber 6, and is used to drive the wafer to flow between the pretreatment chamber 3, the cobalt deposition chamber 4, the aluminum nitride chamber 5 and the oxygen-doped silicon carbide chamber 6 under a vacuum environment.

[0055] In this embodiment, the surface of the substrate has a metal and dielectric material structure, which is the raw material of the wafer. The substrate is transferred to the pretreatment chamber 3 by the transmission device 7 for plasma pretreatment to remove the metal oxide on the surface of the substrate, and then returned to the transmission device 7. The transmission device 7 then transfers the substrate after the plasma pretreatment to the cobalt deposition chamber 4 for cobalt deposition treatment to obtain a wafer, and the wafer returns to the transmission device 7; and so on, the subsequent aluminum nitride deposition treatment and oxygen-doped silicon carbide deposition treatment are realized, thereby completing the cobalt deposition-aluminum nitride deposition-oxygen-doped silicon carbide deposition process of the wafer, and obtaining a wafer with a multilayer thin film formed.

[0056] In this embodiment, the processing technology of cobalt deposition-aluminum nitride deposition-oxygen-doped silicon carbide deposition of the wafer is integrated into the same platform equipment, and the entire processing process is carried out in a vacuum state, which can avoid cobalt exposure to the air environment and reduce the risk of surface oxidation and particle contamination of the wafer. In addition, after the integrated processing, the time consumption of transporting from the cobalt deposition machine to the aluminum nitride machine and the oxygen-doped silicon carbide machine is saved, and the transportation cost and time are reduced, which has the advantages of optimizing the efficiency of cavity use, optimizing the process and saving costs. In addition, the footprint of the wafer integrated processing equipment is reduced, and the footprint of the dust-free processing site is also reduced.

[0057] In one embodiment, the integrated processing equipment for wafers also includes a loading device 2 and a front-end control device 1; the loading device 2 is connected to the transmission device 7 and is used to temporarily store substrates to be deposited and wafers after deposition; the front-end control device 1, the front-end control device 1 and the loading device 2 are away from one end of the transmission device 7 and serve as the control center of the entire equipment, which can control the entire process of wafer processing.

[0058] In one embodiment, a transmission cavity and a transmission mechanism are provided inside the transmission device 7; the transmission cavity is respectively connected to the loading device 2, the pretreatment chamber 3, the cobalt deposition chamber 4, the aluminum nitride chamber 5 and the oxygen-doped silicon carbide chamber 6; the transmission mechanism is used to use the transmission cavity as a transfer hub to drive the wafer to flow between the loading device 2, the pretreatment chamber 3, the cobalt deposition chamber 4, the aluminum nitride chamber 5 and the oxygen-doped silicon carbide chamber 6.

[0059] In this embodiment, the transmission device 7 can be designed as a pentagon as a whole, and the loading device 2, the pretreatment chamber 3, the cobalt deposition chamber 4, the aluminum nitride chamber 5 and the oxygen-doped silicon carbide chamber 6 are respectively connected to one side of the pentagon and are respectively connected to the transmission cavity.

[0060] In this embodiment, the transmission device 7 as a whole can be designed in a hexagonal shape, and the loading device 2, the pretreatment chamber 3, the cobalt deposition chamber 4, the aluminum nitride chamber 5 and the oxygen-doped silicon carbide chamber 6 are respectively connected to one side of the pentagon and are respectively connected to the transmission cavity, wherein an aluminum nitride chamber 5 is added to the sixth side of the hexagon. The time required for the aluminum nitride deposition process is longer than that required for the processes of other chambers. Therefore, two aluminum nitride chambers 5 can be set and distributed adjacent to each other, which can improve the utilization efficiency of other chambers.

[0061] In one embodiment, the integrated processing equipment for wafers further includes:

[0062] A plurality of electrically controlled valves 8 are respectively arranged at the connecting points between the transmission cavity and the loading device 2, the pretreatment chamber 3, the cobalt deposition chamber 4, the aluminum nitride chamber 5 and the oxygen-doped silicon carbide chamber 6 and are used to control the opening and closing of each connecting point.

[0063] In this embodiment, in order to ensure the process independence of the loading device 2 and each cavity, an electrically controlled valve 8 is set at each connection point between the transmission cavity and the loading device 2 and each cavity, and the connection state of each connection point is controlled by opening and closing the electrically controlled valve 8; it can be understood that when the transmission cavity needs to transfer films with the loading device 2 and each cavity, the corresponding electrically controlled valve 8 is opened, and the electrically controlled valve 8 is closed at other times.

[0064] In one embodiment, the integrated processing equipment for wafers further includes:

[0065] The ventilation component is connected to the transmission cavity and is used to circulate ventilation inside the transmission cavity under a vacuum environment to reduce the oxygen content in the transmission cavity.

[0066] In this embodiment, the deposition process of the wafer needs to be carried out in a vacuum environment with extremely low oxygen content (i.e., an operating environment of <1 Torr), so a ventilation component is provided to circulate and ventilate the interior of the transmission cavity in the vacuum environment.

[0067] Specifically, the ventilation component includes an air inlet channel 9, an air outlet channel 10 and an exhaust component 11; the air inlet channel 9 is connected to the transmission cavity and is used to input gas into the transmission cavity; the air outlet channel 10 is connected to the transmission cavity and is used to output gas from the transmission cavity; the exhaust component 11 is connected to one end of the air outlet channel 10 away from the transmission cavity.

[0068] More specifically, one end of the air inlet channel 9 is connected to the transmission cavity, and the other end of the air inlet channel 9 is connected to an external air inlet source 13, and the air inlet source 13 is used to provide oxygen-free gas such as hydrogen; one end of the air outlet channel 10 is connected to the transmission cavity, and the other end of the air outlet channel 10 is connected to an external suction member 11 (i.e., a suction pump). Based on this, while maintaining the transmission cavity in a vacuum environment, the suction function of the suction member 11 is utilized to allow the air inlet channel 9 to input oxygen-free gas into the transmission cavity, while the air outlet channel 10 draws out the gas in the transmission cavity, thereby achieving ventilation and reducing the oxygen content in the transmission cavity.

[0069] In one embodiment, the ventilation component further includes an oxygen detector 12, which is disposed on the gas outlet channel 10. The oxygen detector 12 is used to detect the oxygen content of the gas extracted through the gas outlet channel 10 during cyclic ventilation.

[0070] In this embodiment, during the deposition process of the wafer, it is necessary to monitor the oxygen content in the transmission cavity in real time, so the ventilation component is kept running during the process, and the method of detecting the oxygen content in the transmission cavity can be to set an oxygen detector 12, and the oxygen detector 12 can be directly set in the transmission cavity for detection, and can be set in the gas outlet channel 10 to detect the extracted gas. This embodiment is preferably set in the gas outlet channel 10, because the transmission device 7 will be exposed to the outside air during maintenance, which will affect the operation of the oxygen detector 12.

[0071] It is understandable that in the present embodiment, during the wafer deposition process, the oxygen concentration of the wafer transmission environment needs to be monitored. When the oxygen detector 12 detects that the oxygen content exceeds the standard, the electric control valve 8 can be controlled to close and stop the wafer transmission work, which can avoid the risk of surface oxidation and particle contamination of the wafer; and by increasing the operating power of the exhaust component 11, the ventilation speed in the transmission cavity can be accelerated, so that the oxygen content in the transmission cavity drops rapidly, and the process is resumed after reaching the standard. Based on this, it is ensured that the transmission environment of the wafer meets the standard when it circulates and interacts between the cavities, so as to achieve quality control of the wafer after the deposition reaction.

[0072] In one embodiment, the ventilation component further includes a valve component, which is disposed on the gas outlet channel 10 and is used to control the opening and closing of the gas outlet channel 10 and the oxygen detector 12 .

[0073] In this embodiment, the valve components may include an automatic valve 14 and a manual valve 15. During the wafer deposition process, the automatic valve 14 and the manual valve 15 are both kept in a normally open state. When the transmission device 7 needs to be maintained, the automatic valve 14 and the manual valve 15 are both closed to disconnect the transmission space of the transmission device 7 from the oxygen detector 12, thereby stopping the oxygen concentration detection.

[0074] See also Figure 2The embodiment of the present invention further provides a wafer integrated processing method, which is applied to the above wafer integrated processing equipment, including:

[0075] S201, controlling the transmission device 7 to drive the substrate to the pretreatment chamber 3 for plasma purging treatment to remove metal oxides on the surface of the substrate;

[0076] S202, controlling the transmission device 7 to drive the substrate after the plasma purging process to be transmitted to the cobalt deposition chamber 4 for cobalt deposition process, and obtaining a wafer;

[0077] S203, controlling the transmission device 7 to drive the wafer after the cobalt deposition process to be transferred to the aluminum nitride chamber 5 for aluminum nitride deposition process;

[0078] S204, controlling the transmission device 7 to drive the wafer after the aluminum nitride deposition process to be transferred to the oxygen-doped silicon carbide chamber 6 for oxygen-doped silicon carbide deposition process to obtain a wafer with a multi-layer thin film formed thereon.

[0079] In this embodiment, based on the process of steps S201 to S204, the processing technology of cobalt deposition-aluminum nitride deposition-oxygen-doped silicon carbide deposition of the wafer is integrated into the same platform equipment, and the entire processing process is carried out in a vacuum state, which can avoid cobalt exposure to the air environment and reduce the risk of surface oxidation and particle contamination of the wafer. In addition, after the integrated processing, the time consumption of transporting from the cobalt deposition machine to the aluminum nitride machine and the oxygen-doped silicon carbide machine is saved, and the transportation cost and time are reduced, which has the advantages of optimizing the efficiency of chamber use, optimizing the process and saving costs. In addition, the footprint of the wafer integrated processing equipment is reduced, and the footprint of the dust-free processing site is also reduced.

[0080] See also Figure 3 The embodiment of the present invention further provides a wafer integrated processing method, which is applied to the above wafer integrated processing equipment, including:

[0081] S301, operating the exhaust member 11 at low power, so that the air inlet channel 9 inputs oxygen-free gas into the transmission cavity at a low rate, and the gas in the transmission cavity is extracted through the air outlet channel 10;

[0082] S302, detecting the oxygen content of the gas extracted through the gas outlet channel 10 by the oxygen detector 12;

[0083] S303. When it is detected that the oxygen content exceeds the standard, the electronically controlled valve 8 is controlled to close and the wafer transmission is stopped, and the vacuum element 11 is controlled to operate at high power to allow high-rate ventilation in the transmission cavity until it is detected that the oxygen content meets the standard and then switches back to low-power operation.

[0084] In this embodiment, based on the process of steps S301 to S303, in this embodiment, during the deposition process of the wafer, the oxygen concentration of the wafer transmission environment needs to be monitored. When the oxygen detector 12 detects that the oxygen content exceeds the standard (higher than 0.5ppm concentration), the electric control valve 8 can be controlled to close and stop the wafer transmission work, which can avoid the risk of surface oxidation and particle contamination of the wafer; and by increasing the operating power of the exhaust component 11, the ventilation speed in the transmission cavity can be accelerated, so that the oxygen content in the transmission cavity drops rapidly, and the process is resumed after reaching the standard (lower than 0.3ppm concentration). Based on this, it is ensured that the transmission environment of the wafer meets the standard when it circulates and interacts between the cavities, so as to achieve quality control of the wafer after the deposition reaction.

[0085] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the method described above can refer to the corresponding process in the aforementioned device embodiment, and will not be repeated here.

[0086] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. An integrated processing device for wafers, characterized in that: include: A pretreatment chamber, used for performing plasma pretreatment on the substrate; A cobalt deposition chamber, used for performing cobalt deposition processing on a substrate and obtaining a wafer; An aluminum nitride chamber, used for performing aluminum nitride deposition processing on wafers; An oxygen-doped silicon carbide chamber is used to perform oxygen-doped silicon carbide deposition processing on wafers; The transmission device is connected to the pretreatment chamber, the cobalt deposition chamber, the aluminum nitride chamber and the oxygen-doped silicon carbide chamber, and is used to drive the wafer to flow among the pretreatment chamber, the cobalt deposition chamber, the aluminum nitride chamber and the oxygen-doped silicon carbide chamber under a vacuum environment.

2. The integrated wafer processing equipment according to claim 1, characterized in that: Also includes: A loading device, connected to the transmission device and used to temporarily store substrates to be deposited and wafers after deposition; The front-end control device is located at one end of the loading device away from the transmission device and serves as the control center of the entire equipment.

3. The integrated processing equipment for wafers according to claim 2, characterized in that: The transmission device is provided with a transmission cavity and a transmission mechanism inside; The transmission cavity is respectively connected to the loading device, the pretreatment chamber, the cobalt deposition chamber, the aluminum nitride chamber and the oxygen-doped silicon carbide chamber; The transmission mechanism is used to use the transmission cavity as a transfer hub to drive the wafer to flow between the loading device, the pretreatment chamber, the cobalt deposition chamber, the aluminum nitride chamber and the oxygen-doped silicon carbide chamber.

4. The integrated processing equipment for wafers according to claim 3, characterized in that: Also includes: A plurality of electrically controlled valves are respectively arranged at the connecting points between the transmission cavity and the loading device, the pretreatment chamber, the cobalt deposition chamber, the aluminum nitride chamber and the oxygen-doped silicon carbide chamber and are used to control the opening and closing of each connecting point.

5. The integrated wafer processing equipment according to claim 4, characterized in that: Also includes: A ventilation component is connected to the transmission cavity and is used to circulate ventilation inside the transmission cavity under a vacuum environment to reduce the oxygen content in the transmission cavity.

6. The integrated wafer processing equipment according to claim 5, characterized in that: The ventilation component comprises: an air inlet channel connected to the transmission cavity and used to input gas into the transmission cavity; An outlet channel connected to the transmission cavity and used for outputting gas from the transmission cavity; The air extraction member is connected to an end of the air outlet channel away from the transmission cavity.

7. The integrated wafer processing equipment according to claim 6, characterized in that: The ventilation component also includes an oxygen detector, which is arranged on the air outlet channel and is used to detect the oxygen content of the gas extracted through the air outlet channel during cyclic ventilation.

8. The integrated wafer processing equipment according to claim 7, characterized in that: The ventilation component also includes a valve component, which is arranged on the air outlet channel and is used to control the opening and closing of the air outlet channel and the oxygen detector.

9. A wafer integrated processing method, applied to the wafer integrated processing equipment according to any one of claims 1 to 8, characterized in that: include: Controlling the transmission device to drive the substrate to the pretreatment chamber for plasma purge treatment to remove metal oxides on the surface of the substrate; Controlling the transmission device to drive the substrate after the plasma purging process to be transmitted to the cobalt deposition chamber for cobalt deposition process, and obtaining a wafer; Controlling the transmission device to drive the wafer after the cobalt deposition process to the aluminum nitride chamber for aluminum nitride deposition process; The transmission device is controlled to drive the wafer after the aluminum nitride deposition process to the oxygen-doped silicon carbide chamber for oxygen-doped silicon carbide deposition process to obtain a wafer with a multi-layer film formed thereon.

10. A wafer integrated processing method, applied to the wafer integrated processing equipment according to any one of claims 7 to 8, characterized in that: include: The pumping member is operated at low power, so that the air inlet channel inputs oxygen-free gas into the transmission cavity at a low rate, and the gas in the transmission cavity is pumped out through the air outlet channel; detecting the oxygen content of the gas extracted through the gas outlet channel by the oxygen detector; When it is detected that the oxygen content exceeds the standard, the electric control valve is controlled to close and the wafer transmission is stopped, and the vacuum element is controlled to operate at high power to allow high-rate ventilation in the transmission cavity until it is detected that the oxygen content meets the standard and then switches back to low-power operation.

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