Polishing pad, polishing equipment and polishing pad shape adjusting method

Abstract

The invention relates to a polishing pad, polishing equipment and a shape adjusting method of the polishing pad. The polishing pad comprises a plurality of lifting columns and a plurality of supporting columns, the polishing layer is arranged on the tops of the multiple lifting columns, and the polishing layer comprises first areas in one-to-one correspondence with the multiple lifting columns and second areas adjacent to the first areas; the control structure is used for controlling the lifting columns to ascend and descend so as to change the height difference between the first area and the second area. The polishing pad comprises a plurality of lifting columns capable of moving up and down and a polishing layer, the polishing layer comprises first areas in one-to-one correspondence with the lifting columns and second areas located outside the first areas, and orthographic projections of the lifting columns on the polishing layer are located in the corresponding first areas. The height difference between the first area and the second area can be changed by controlling lifting of the lifting column, so that the shape of the polishing pad is changed, silicon wafers of different types can be machined correspondingly, and the production efficiency is improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor product manufacturing, and in particular to a polishing pad, a polishing device and a polishing pad morphology adjustment method. Background Art

[0002] The final polishing equipment is used to mirror the surface of the silicon wafer, which can control the final flatness of the silicon wafer, the quality level of surface particles and metal, etc. Among the many auxiliary materials of the final polishing equipment, the material and structure of the polishing pad play an important role in controlling the morphology and flatness of the silicon wafer.

[0003] In order to meet the quality requirements of different types of silicon wafers, the current general polishing pads need to process different silicon wafers during different life cycles of the polishing pads, which seriously affects the production and operation efficiency. Summary of the invention

[0004] In order to solve the above technical problems, the present invention provides a polishing pad, a polishing device and a polishing pad morphology adjustment method to solve the problem of processing different silicon wafers during different life cycles of the polishing pad, which affects production efficiency.

[0005] In order to achieve the above-mentioned purpose, the technical solution adopted in the embodiment of the present invention is: a polishing pad, comprising:

[0006] Multiple lifting columns;

[0007] A polishing layer, disposed on top of the plurality of lifting columns, the polishing layer comprising a first area corresponding to the plurality of lifting columns one by one, and a second area adjacent to the first area;

[0008] The control structure is used to control the lifting and lowering of the plurality of lifting columns to change the height difference between the first area and the second area.

[0009] Optionally, the polishing layer is made of elastic material, and the deformation amount of the corresponding first area is adjusted by lifting and lowering the lifting column.

[0010] Optionally, the first area is constructed as a hollow structure, and the height of the portion of the lifting column extending out of the corresponding hollow structure can be adjusted by lifting and lowering the lifting column.

[0011] Optionally, the control structure includes:

[0012] A receiving unit, used for receiving flatness information of a silicon wafer to be polished;

[0013] A processing unit, configured to obtain a height difference between the first region and the second region according to flatness information of the silicon wafer to be polished;

[0014] The lifting part is used to control the plurality of lifting columns to lift and lower according to the height difference between the first area and the second area.

[0015] Optionally, it further includes a base, and the plurality of lifting columns are arranged on the base, and the control structure is used to control the base to perform lifting movement to drive the plurality of lifting columns to perform lifting movement.

[0016] Optionally, the lifting column is made of ceramic.

[0017] Optionally, the cross-section of the lifting column is a regular geometric shape including a square and a rectangle.

[0018] Optionally, the thickness of the polishing layer is 1.5-2.5 mm, and the height of the lifting column is 4-5 mm.

[0019] An embodiment of the present invention further provides a polishing device, comprising a fixed plate and a polishing pad disposed on the fixed plate, wherein the polishing pad is the above-mentioned polishing pad.

[0020] Optionally, a receiving cavity is provided in the fixed plate, and a groove communicating with the receiving cavity is provided on the surface of the fixed plate.

[0021] The embodiment of the present invention further provides a polishing pad profile adjustment method, which is applied to the above-mentioned polishing pad, comprising:

[0022] Obtaining flatness information of the silicon wafer to be polished;

[0023] Acquire a height difference between a first region and a second region of the polishing pad according to the flatness information;

[0024] The lifting and lowering of the plurality of lifting columns are controlled to adjust the height of the first area so that the topography of the polishing pad matches the flatness information of the silicon wafer to be polished.

[0025] Optionally, obtaining a height difference between a first area and a second area of ​​the polishing pad according to the flatness information specifically includes:

[0026] Acquire the life of a polishing pad matching the silicon wafer to be polished according to the flatness information of the silicon wafer to be polished;

[0027] According to the corresponding relationship between the life of the polishing pad and the morphology of the polishing pad, the morphology of the polishing pad matching the silicon wafer to be polished is obtained;

[0028] According to the morphology of the polishing pad, a height difference between a first area and a second area of ​​the polishing pad is obtained.

[0029] The beneficial effects of the present invention are as follows: the polishing pad provided in this embodiment includes a plurality of lifting columns and a polishing layer that can be lifted and lowered, the polishing layer includes a first area corresponding to the plurality of lifting columns one by one and a second area located outside the first area, the orthographic projections of the plurality of lifting columns on the polishing layer are located in the corresponding first area, and the height difference between the first area and the second area can be changed by controlling the lifting and lowering of the lifting columns, thereby changing the morphology of the polishing pad, so that different types of silicon wafers can be processed and production efficiency can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A schematic diagram showing the early stage of the life of polishing in the related art;

[0031] Figure 2 A schematic diagram showing the end of the life of a polishing process in the related art;

[0032] Figure 3 A schematic diagram showing a polishing pad in an embodiment of the present invention;

[0033] Figure 4 A schematic diagram showing a polishing layer in an embodiment of the present invention;

[0034] Figure 5 A schematic diagram showing a polishing pad in an embodiment of the present invention;

[0035] Figure 6 A partial structural schematic diagram of a polishing device in an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0037] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one", "one" or "the" do not indicate quantity restrictions, but indicate that there is at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Similar words such as "connect" or "connected" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0038] The features such as "parallel", "perpendicular", and "same" used in the embodiments of the present disclosure include the features such as "parallel", "perpendicular", and "same" in a strict sense, as well as the cases where "approximately parallel", "approximately perpendicular", "approximately the same", etc. include certain tolerances, taking into account the tolerances associated with the measurement of specific quantities (e.g., the limitations of the measurement system), and represent the acceptable deviation range for a specific value determined by ordinary technicians in the field. For example, "approximately" can mean within one or more standard deviations, or within 3% or 5% of the value.

[0039] In addition, in this document, unless otherwise defined, the terms "substantially", "substantially", "approximately" and "about" are used to describe and explain small changes. When used with an event or situation, these terms can cover situations where the event or situation occurs exactly, and can also cover situations where the event or situation occurs approximately. For example, when used with a numerical value, these terms can include a range of variation of less than or equal to 10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, less than or equal to ±0.05%. The term "substantially coplanar" can refer to two surfaces being arranged along the same plane in the micrometer range, for example, arranged along the same plane within 40μm, 30μm, 20μm, 10μm or 1μm.

[0040] Before integrated circuit manufacturing, semiconductor wafers need to be polished to improve the flatness of the wafers. The final polishing of semiconductor wafers is to use slurry and polishing pads (PAD) on the final polishing machine to perform final polishing on the front side of 300mm wafers in a chemical mechanical reaction to improve the roughness, flatness and nano-morphology of the front side and remove particles. The final polishing determines the final flatness and nano-morphology of the wafer. Generally, the final polishing removal amount is about 1um. The polishing liquid is generally alkaline silica, and other additives such as polymers are added to it.

[0041] Among the many auxiliary materials of the final polishing equipment, the material and structure of the polishing pad play an important role in controlling the morphology and flatness of the silicon wafer. In order to meet the quality requirements of different types of silicon wafers, the current general polishing pad needs to process different silicon wafers during different life cycles of the polishing pad, which seriously affects the production and operation efficiency. Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of the polishing pad at the beginning of its life. Figure 2 is a schematic diagram of a polishing pad at the end of its life. As the number of processes increases, the raised portion 10 on the surface of the polishing pad is continuously worn away; Figure 1 and Figure 2 For comparison, Figure 2 The raised portion 10 of the polishing pad in the middle is severely worn. The polishing pad at the beginning of its life is suitable for processing polishing sheets. Figure 2 Polishing pads at the end of their life are suitable for processing epitaxial wafers.

[0042] refer to Figure 3-Figure 5 In view of the above problems, this embodiment provides a polishing pad, comprising:

[0043] A plurality of lifting columns 2;

[0044] A polishing layer 1 is disposed on top of the plurality of lifting columns 2, and the polishing layer 1 includes a first area 11 corresponding to the plurality of lifting columns 2 one by one, and a second area 12 adjacent to the first area 11;

[0045] The control structure is used to control the lifting and lowering of the plurality of lifting columns 2 to change the height difference between the first area 11 and the second area 12 .

[0046] The multiple first areas 11 on the polishing layer 1 are arranged in one-to-one correspondence with the multiple lifting columns 2. In the direction perpendicular to the polishing layer 1, the first areas 11 completely cover the corresponding lifting columns 2. The lifting columns 2 rise toward the polishing layer 1 to increase the height difference between the first areas 11 and the second areas 12. The lifting columns 2 descend in the direction away from the polishing layer 1 to reduce the height difference between the first areas 11 and the second areas 12, thereby adjusting and changing the surface morphology of the polishing layer 1, that is, changing the morphology of the polishing pad, so as to flexibly adjust different types of silicon wafers and improve production efficiency.

[0047] It should be noted that the shape of the cross section of the polishing layer 1 is consistent with the shape of the silicon wafer to be polished. For example, if a silicon wafer is generally circular, then the shape of the cross section of the polishing layer 1 is circular.

[0048] The polishing pad generally includes a substrate and a raised portion located on the substrate, and the end surface of the raised portion constitutes a polishing surface. As the number of processing times increases, the raised portion is continuously worn, that is, the height of the raised portion is continuously reduced, that is, the height difference between the raised portion and the surface of the substrate is reduced. In this embodiment, the lifting and lowering of the lifting column 2 is controlled according to the flatness information of the silicon wafer to be processed, so that the height of the first area 11 can be adjusted, so that the corresponding polishing pad morphology matching with different types of silicon wafers can be formed to improve production efficiency.

[0049] It should be noted that the second region 12 is the region on the surface of the polishing layer 1 excluding the first region 11 .

[0050] Exemplarily, the plurality of lifting columns 2 are arranged in an array, but the present invention is not limited thereto.

[0051] refer to Figure 3 In an exemplary embodiment, the polishing layer 1 is made of elastic material, and the deformation amount of the corresponding first area 11 is adjusted by lifting and lowering the lifting column 2 .

[0052] When the lifting column 2 moves upward toward the polishing layer 1, the corresponding first area will be lifted up, so that the first area 11 is protruded, thereby increasing the height difference between the first area 11 and the second area 12, and the surfaces of multiple first areas 11 constitute polishing surfaces.

[0053] refer to Figure 5 In this embodiment, a substrate 4 is further provided on a side of the polishing layer 1 close to the lifting columns 2, and through holes corresponding to a plurality of the lifting columns 2 are provided on the substrate 4, and the lifting columns 2 can be arranged through the through holes.

[0054] Exemplarily, the material of the substrate 4 may be ceramic, but is not limited thereto.

[0055] The polishing layer 1 is attached to a side of the substrate 4 away from the lifting column 2 via an adhesive layer.

[0056] refer to Figure 4 In an exemplary embodiment, the first area 11 is constructed as a hollow structure, and the height of the portion of the lifting column 2 extending out of the corresponding hollow structure is adjusted by lifting and lowering the lifting column 2.

[0057] The plurality of lifting columns 2 can be inserted into the corresponding hollow structure of the first area 11 and extend from the corresponding hollow structure. The end surfaces of the plurality of lifting columns 2 exposed in the first area 11 constitute polished surfaces, and the portions of the lifting columns 2 exposed in the hollow structure constitute the height difference between the first area 11 and the second area 12.

[0058] In this embodiment, the polishing layer 1 may be made of ceramic.

[0059] In an exemplary embodiment, the control structure includes:

[0060] A receiving unit, used for receiving flatness information of a silicon wafer to be polished;

[0061] A processing unit, configured to obtain a height difference between the first region 11 and the second region 12 according to flatness information of the silicon wafer to be polished;

[0062] The lifting part is used to control the lifting of the plurality of lifting columns 2 according to the height difference between the first area 11 and the second area 12 .

[0063] By adopting the above solution, the morphology corresponding to the polishing pad can be obtained according to the flatness information of the silicon wafer to be polished, that is, the height difference between the first area 11 and the second area 12, that is, the height of the part of the lifting column 2 exposed on the surface of the polishing layer 1, can be obtained by calculation. Therefore, the lifting and lowering of the lifting column 2 can be controlled according to this data to form the desired morphology of the polishing pad.

[0064] In an exemplary embodiment, the processing unit includes:

[0065] a first processing unit, the first processing unit being used to obtain the life of a polishing pad matching the silicon wafer to be polished according to the flatness information of the silicon wafer to be polished, and to obtain the morphology of the corresponding polishing pad according to the corresponding relationship between the life of the polishing pad and the morphology of the polishing pad;

[0066] The second processing unit is used to obtain the height of the first area 11 according to the obtained morphology of the polishing pad, that is, to obtain the height difference between the first area 11 and the second area 12.

[0067] It should be noted that the correspondence between the flatness information of the silicon wafer to be processed and the life of the polishing pad is pre-set and stored, and the correspondence between the life of the polishing pad and the morphology of the polishing pad is pre-set and stored. After obtaining the flatness information of the silicon wafer to be polished, the morphology of the matching polishing pad can be obtained according to the corresponding correspondence, and then the height of the first area 11 can be obtained according to calculation.

[0068] refer to Figure 5 In an exemplary embodiment, the polishing pad further comprises a base 3, a plurality of lifting columns 2 are arranged on the base 3, and the control structure is used to control the base 3 to perform lifting movement to drive the plurality of lifting columns 2 to perform lifting movement.

[0069] By adopting the above solution, the plurality of lifting columns 2 can perform synchronous lifting motion to improve the accuracy of adjusting the shape of the polishing pad.

[0070] In an exemplary embodiment, a plurality of lifting columns 2 are fixedly disposed on the base 3 to improve the connection stability between the base 3 and the lifting columns 2 .

[0071] In an exemplary embodiment, a plurality of lifting columns 2 are detachably disposed on the base 3 , which can facilitate replacement and maintenance of the lifting columns 2 .

[0072] Exemplarily, the lifting column 2 and the base 3 may be connected by a snap-fitting manner, but the present invention is not limited thereto.

[0073] In an exemplary embodiment, the lifting part includes a lifting cylinder and clamping members arranged on opposite sides of the base 3. Under the action of the lifting cylinder, the clamping members drive the base 3 to perform lifting movements, thereby driving the plurality of lifting columns 2 to perform lifting movements.

[0074] In an exemplary embodiment, the plurality of lifting columns 2 may also perform independent lifting movements.

[0075] refer to Figure 5 In an exemplary embodiment, the polishing pad further includes a support frame 101, the support frame 101 includes a bottom plate and side plates arranged around the bottom plate, the side plates are supported on the edge of the polishing layer 1 on the side close to the lifting column 2, the lifting column 2 is arranged in a accommodating cavity formed by the bottom plate and the side plates, and the control structure 102 is arranged between the lifting column 2 and the bottom plate to control the lifting and lowering of the lifting column 2.

[0076] For example, in an embodiment where the polishing layer 1 is made of elastic material, a substrate 4 is disposed on one side of the polishing layer 1 close to the lifting column 2, and the support frame 101 is supported on the edge of the substrate 4. The control structure 102 is disposed between the base 3 and the bottom plate.

[0077] In an exemplary embodiment, the lifting column 2 is made of ceramic.

[0078] Ceramic materials have the characteristics of high mechanical strength and good wear resistance. They can reduce wear during the polishing process, friction with the polishing pad and wafer, thereby increasing the use time, reducing the number of replacements, and improving production efficiency.

[0079] In an exemplary embodiment, the cross section of the lifting column 2 is a regular geometric shape including a square and a rectangle.

[0080] It should be noted that the cross section of the lifting column 2 is the radial cross section of the lifting column 2 .

[0081] It should be noted that the cross-sectional shape of the lifting column 2 is not limited to a square or a rectangle, but may also be a circle, a polygon, etc. It may also be an irregular geometric shape.

[0082] In an exemplary embodiment, the cross-section of the lifting column 2 is in the shape of a square, and the side length of the square is 8 mm, but the present invention is not limited thereto.

[0083] In an exemplary embodiment, the end face of the lifting column 2 close to the polishing layer 1 is a planar structure, and the end face of the lifting column 2 close to the polishing layer 1 is parallel to the radial direction of the lifting column 2, so that the end faces of multiple lifting columns 2 close to the polishing layer 1 are located in the same plane, so that in an embodiment in which a hollow structure is set in the first area 11, the end faces of multiple lifting columns 2 close to the polishing layer 1 together constitute a polishing surface for polishing a silicon wafer to be polished, or when the polishing layer 1 is a solid structure, the sides of multiple first areas 11 away from the lifting columns 2 are located in the same plane to jointly constitute a polishing surface for polishing a silicon wafer to be polished.

[0084] In an exemplary embodiment, the polishing layer 1 has a thickness of 1.5-2.5 mm, and the lifting column 2 has a height of 4-5 mm, but the present invention is not limited thereto.

[0085] In some embodiments, the polishing layer 1 has a thickness of 2 mm, and the maximum height of the portion of the lifting column 2 that can extend out of the polishing layer 1 is 2 mm, but the present invention is not limited thereto.

[0086] refer to Figure 6 The embodiment of the present invention further provides a polishing device, including a fixed plate 5 and a polishing pad arranged on the fixed plate 5, and the polishing pad is the above-mentioned polishing pad.

[0087] It should be noted that Figure 6 It is a schematic diagram, which only shows the positional relationship between the polishing pad and the fixed plate, and does not fully show the overall structure of the polishing equipment.

[0088] Exemplarily, the polishing device further includes a control unit 7 for controlling the polishing pad to perform polishing, and an operating unit 8 for human-computer interaction. The receiving unit and the processing unit in the control structure of the polishing pad can be integrated with the control unit 7.

[0089] When polishing a silicon wafer to be polished, a staff member inputs the flatness information of the silicon wafer to be polished through the operating unit 8, and transmits it to the control unit 7 through the transmission unit 9. The receiving unit receives the flatness information, and the processing unit obtains the height difference between the first area 11 and the second area 12 according to the flatness information. The lifting unit controls the lifting and lowering of the lifting column 2 according to the height difference between the first area 11 and the second area 12, so as to adjust the morphology of the polishing pad to match the morphology of the silicon wafer.

[0090] In an exemplary embodiment, a rotation driving structure 6 for controlling the rotation of the fixed plate 5 is disposed at the bottom of the fixed plate 5 .

[0091] In an exemplary embodiment, a receiving cavity is disposed in the fixed plate 5 , and a groove 51 communicating with the receiving cavity is disposed on the surface of the fixed plate 5 .

[0092] The final polishing of the semiconductor wafer is to use a polishing slurry and a polishing pad (PAD) on the final polishing machine to perform a final polishing on the front side of a 300 mm wafer by a chemical mechanical reaction to improve the roughness, flatness and nano-morphology of the front side and remove particles. The polishing slurry will enter the receiving chamber from the groove 51 to avoid pollution to the environment.

[0093] The embodiment of the present invention further provides a polishing pad profile adjustment method, which is applied to the above-mentioned polishing pad, comprising:

[0094] Obtaining flatness information of the silicon wafer to be polished;

[0095] Acquire a height difference between a first region and a second region of the polishing pad according to the flatness information;

[0096] The lifting and lowering of the plurality of lifting columns are controlled to adjust the height of the first area so that the topography of the polishing pad matches the flatness information of the silicon wafer to be polished.

[0097] In an exemplary embodiment, obtaining a height difference between a first area and a second area of ​​the polishing pad according to the flatness information specifically includes:

[0098] Acquire the life of a polishing pad matching the silicon wafer to be polished according to the flatness information of the silicon wafer to be polished;

[0099] According to the corresponding relationship between the life of the polishing pad and the morphology of the polishing pad, the morphology of the polishing pad matching the silicon wafer to be polished is obtained;

[0100] According to the morphology of the polishing pad, a height difference between a first area and a second area of ​​the polishing pad is obtained.

[0101] There are a few points to note:

[0102] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.

[0103] (2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced, that is, these drawings are not drawn according to the actual scale. It is understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, the element may be "directly" "on" or "under" the other element or there may be intermediate elements.

[0104] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to obtain new embodiments.

[0105] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A polishing pad, characterized in that: include: Multiple lifting columns; A polishing layer, disposed on top of the plurality of lifting columns, the polishing layer comprising a first area corresponding to the plurality of lifting columns one by one, and a second area adjacent to the first area; The control structure is used to control the lifting and lowering of the plurality of lifting columns to change the height difference between the first area and the second area.

2. The polishing pad according to claim 1, characterized in that The polishing layer is made of elastic material and is raised and lowered by the lifting column to adjust the deformation amount of the corresponding first area.

3. The polishing pad according to claim 1, characterized in that The first area is constructed as a hollow structure, and the height of the portion of the lifting column extending out of the corresponding hollow structure can be adjusted by lifting and lowering the lifting column.

4. The polishing pad according to claim 1, characterized in that The control structure includes: A receiving unit, used for receiving flatness information of a silicon wafer to be polished; A processing unit, configured to obtain a height difference between the first region and the second region according to flatness information of the silicon wafer to be polished; The lifting part is used to control the plurality of lifting columns to lift and lower according to the height difference between the first area and the second area.

5. The polishing pad according to claim 1, characterized in that It also includes a base, and the plurality of lifting columns are arranged on the base. The control structure is used to control the base to perform lifting movement to drive the plurality of lifting columns to perform lifting movement.

6. The polishing pad according to claim 1, characterized in that The material of the lifting column is ceramic.

7. The polishing pad according to claim 1, characterized in that The cross section of the lifting column is a regular geometric shape including a square and a rectangle.

8. The polishing pad according to claim 1, characterized in that The thickness of the polishing layer is 1.5-2.5 mm, and the height of the lifting column is 4-5 mm.

9. A polishing device, characterized in that: The invention comprises a fixed plate and a polishing pad arranged on the fixed plate, wherein the polishing pad is the polishing pad according to any one of claims 1 to 8.

10. The polishing device according to claim 9, characterized in that: An accommodating cavity is arranged in the fixed plate, and a groove communicating with the accommodating cavity is arranged on the surface of the fixed plate.

11. A method for adjusting the morphology of a polishing pad, applied to the polishing pad according to any one of claims 1 to 8, characterized in that: include: Obtaining flatness information of the silicon wafer to be polished; Acquire a height difference between a first area and a second area of ​​the polishing pad according to the flatness information; The lifting and lowering of the plurality of lifting columns are controlled to adjust the height of the first area so that the topography of the polishing pad matches the flatness information of the silicon wafer to be polished.

12. The polishing pad profile adjustment method according to claim 11, characterized in that: Acquiring a height difference between a first area and a second area of ​​the polishing pad according to the flatness information specifically includes: Acquire the life of a polishing pad matching the silicon wafer to be polished according to the flatness information of the silicon wafer to be polished; According to the corresponding relationship between the life of the polishing pad and the morphology of the polishing pad, the morphology of the polishing pad matching the silicon wafer to be polished is obtained; According to the morphology of the polishing pad, a height difference between a first area and a second area of ​​the polishing pad is obtained.

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