Thin film deposition apparatus and method

Abstract

The embodiment of the invention provides thin film deposition equipment and a thin film deposition method, and the thin film deposition equipment comprises a rotating disc which is arranged in a reaction cavity; the plurality of bearing tables are arranged on the rotating disc and are used for bearing pieces to be deposited and rotating along with the rotating disc when the rotating disc rotates; the rotating mechanism is connected between the rotating disc and the bearing table and used for driving the bearing table to perform self-rotation in the same direction as the rotating direction of the rotating disc; the control mechanism is connected with the rotating disc and the rotating mechanism and used for controlling the rotating disc to rotate at a first preset speed in the thin film deposition process and controlling the rotating mechanism to drive the bearing table to rotate at a second preset speed.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and relates to but is not limited to a thin film deposition device and method. Background Art

[0002] Thin film deposition technology has been widely used in today's semiconductor, electronics, machinery and other industrial fields. Thin film deposition technology includes physical vapor deposition and chemical vapor deposition. Among them, chemical vapor deposition technology is a method of using one or more gas phase compounds or single substances containing thin film elements to chemically react on the surface of the wafer to form a thin film.

[0003] In current chemical vapor deposition machines, due to the dense airflow and high gas flow rate at the exhaust port inside the machine, and the influence of the vacuum flow field effect, the reaction gas is sprayed into the interior of the chamber during the thin film deposition process and flows through the periphery of the wafer (i.e., the exhaust port) and is quickly extracted. As a result, the periphery of the prepared thin film is too thin, affecting the yield of the product. Summary of the invention

[0004] In view of this, an embodiment of the present disclosure provides a thin film deposition device and method.

[0005] In a first aspect, an embodiment of the present disclosure provides a thin film deposition device, comprising:

[0006] A rotating disk is arranged inside the reaction chamber;

[0007] A plurality of carrying platforms, arranged on the rotating disk, for carrying the objects to be deposited and rotating with the rotating disk when the rotating disk rotates;

[0008] A rotating mechanism, connected between the rotating disk and the carrying platform, and used to drive the carrying platform to rotate in the same direction as the rotating disk;

[0009] The control mechanism is connected to the rotating disk and the rotating mechanism, and is used to control the rotating disk to rotate at a first preset speed during the thin film deposition process, and to control the rotating mechanism to drive the supporting platform to rotate at a second preset speed.

[0010] In some embodiments, it further includes: an air extraction unit;

[0011] The exhaust unit is used to perform vacuum treatment on the reaction chamber through two exhaust pipes; the pipe openings of the two exhaust pipes are respectively arranged on both sides of the diameter direction of the rotating disk.

[0012] In some embodiments, it also includes:

[0013] An alignment mechanism, connected to the control mechanism, for automatically calibrating the object to be deposited to an initial angle before thin film deposition;

[0014] The control mechanism is further used to control the alignment mechanism to drive the object to be deposited to rotate by a preset angle after the object to be deposited is automatically calibrated to the initial angle.

[0015] In a second aspect, an embodiment of the present disclosure provides a thin film deposition method, which is applied to the thin film deposition device as described in the first aspect to deposit a thin film on a workpiece to be deposited, the method comprising:

[0016] Providing the object to be deposited;

[0017] When the first preset speed is controlled by the control mechanism to be greater than 0, a first dielectric layer is deposited on the surface of the object to be deposited; wherein the thickness of the first dielectric layer close to the exhaust pipe side is less than the thickness of the first dielectric layer away from the exhaust pipe side;

[0018] Automatically calibrating the to-be-deposited object formed with the first dielectric layer to the initial angle by the alignment mechanism;

[0019] The control mechanism controls the alignment mechanism to drive the object to be deposited to rotate by the preset angle;

[0020] When the first preset speed is controlled to be greater than 0 by the control mechanism, a second dielectric layer is deposited on the surface of the first dielectric layer after rotating the preset angle, so that the difference between the total thickness of the first dielectric layer and the second dielectric layer close to the exhaust pipe side and the total thickness of the first dielectric layer and the second dielectric layer away from the exhaust pipe side is within a preset range.

[0021] In some embodiments, the film includes a dielectric layer constituting a capacitor; the object to be deposited includes at least a first electrode layer; the first dielectric layer is formed on a surface of the first electrode layer; and the method further includes:

[0022] When the first preset speed is controlled by the control mechanism to be greater than 0, a third dielectric layer is formed on the surface of the second dielectric layer;

[0023] Wherein, the thickness of the third dielectric layer is less than the thickness of the first dielectric layer;

[0024] The first dielectric layer, the second dielectric layer, and the third dielectric layer constitute the dielectric layer.

[0025] In some embodiments, the thickness of the second dielectric layer is 1.1-1.2 times the thickness of the first dielectric layer; and the thickness of the first dielectric layer is less than 10 nm.

[0026] In some embodiments, the first dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer located on a surface of the first sub-dielectric layer; the thickness of the first sub-dielectric layer close to the exhaust pipe is smaller than the thickness of the first sub-dielectric layer away from the exhaust pipe, and the thickness of the second sub-dielectric layer close to the exhaust pipe is smaller than the thickness of the second sub-dielectric layer away from the exhaust pipe;

[0027] The thickness of the second sub-dielectric layer is greater than the thickness of the first sub-dielectric layer.

[0028] In some embodiments, when depositing the thin film, the method further comprises:

[0029] The second preset speed is controlled to be greater than 0 by the control mechanism.

[0030] In some embodiments, the first preset speed is controlled to be 1-5 rpm, the sum of the first preset speed and the second preset speed is 6-12 rpm, and the pressure of the reaction chamber is 1.5-2.5 Torr.

[0031] In a third aspect, an embodiment of the present disclosure provides a thin film deposition method, which is applied to the thin film deposition device as described in the first aspect to deposit a thin film on a to-be-deposited object, the method comprising:

[0032] Providing the object to be deposited;

[0033] When the second preset speed and the first preset speed are both controlled by the control mechanism to be greater than 0, a preset thin film is deposited on the surface of the object to be deposited.

[0034] The embodiment of the present disclosure provides a thin film deposition device and method, wherein the thin film deposition device includes: a rotating disk, arranged inside a reaction chamber; a plurality of carriers, arranged on the rotating disk, used to carry the object to be deposited and rotate with the rotating disk when the rotating disk rotates; a rotating mechanism, connected between the rotating disk and the carrier, used to drive the carrier to rotate in the same direction as the rotation direction of the rotating disk; a control mechanism, connected to the rotating disk and the rotating mechanism, used to control the rotating disk to rotate at a first preset speed during the thin film deposition process, and control the rotating mechanism to drive the carrier to rotate at a second preset speed. Since the thin film deposition device in the embodiment of the present disclosure includes a rotating mechanism connected between the rotating disk and the carrier, and the rotating mechanism can drive the carrier carrying the object to be deposited to rotate in the same direction as the rotation direction of the rotating disk, in this way, the rotating disk revolves and the carrier rotates during the thin film deposition process, which can reduce the influence of the airflow inside the reaction chamber on the deposition of the reactants, improve the uniformity of the film thickness of the deposited film, and thus improve the overall yield of the product. In one embodiment, when performing a multi-layer film deposition process, after depositing at least one layer of film, the deposited object is rotated by a preset angle before performing subsequent thin film deposition. The uneven film thickness in the same direction of different film layers can be used to compensate for the thickness, thereby achieving uniform film layers and improving yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In the accompanying drawings (which are not necessarily drawn to scale), like reference numerals may describe similar components in different views. Like reference numerals with different letter suffixes may represent different examples of similar components. The accompanying drawings generally illustrate various embodiments discussed herein by way of example and not limitation.

[0036] Figure 1 A schematic diagram of the airflow inside a deposition machine chamber;

[0037] Figure 2 For Figure 1 Thickness distribution of the film prepared in the chamber shown;

[0038] Figure 3 Schematic diagram of the structure of the thin film deposition device provided in the embodiment of the present disclosure Figure 1 ;

[0039] Figure 4 Schematic diagram of the structure of the thin film deposition device provided in the embodiment of the present disclosure Figure 2 ;

[0040] Figure 5 A schematic diagram of a thin film deposition method provided in an embodiment of the present disclosure;

[0041] Figure 6-Figure 10 A schematic diagram of a structure in a thin film deposition process provided by an embodiment of the present disclosure;

[0042] Fig.11 and Fig.12 A distribution diagram of leakage of the upper plate of the dielectric layer formed by different processes with the first dielectric layer and the second dielectric layer as the dielectric layer;

[0043] Fig.13 A schematic flow chart of another thin film deposition method provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0044] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0045] In the following description, a large number of details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0046] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0047] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on other elements or layers, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part discussed, it does not mean that the present disclosure necessarily has the first element, component, region, layer or part.

[0048] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0049] Figure 1 Schematic diagram of the air flow inside a deposition machine chamber. Figure 1 As shown, during the deposition process, the platform 10 carrying the wafer 101 in the chamber moves along Figure 1 Rotating clockwise in the direction indicated by the middle arrow, the gas extraction port 102 is arranged on both sides of the diameter direction of the machine 10, and is used to extract and process the gas inside the chamber in time. Therefore, during the deposition process, the gas extraction port 102 is always in working state. Since the airflow around the gas extraction port 102 is dense and the gas flow rate is large, due to the vacuum flow field effect, when the dielectric layer is deposited and formed, the gas is sprayed into and flows through the gas extraction port 102 on the periphery of the wafer 101, and will be quickly extracted. Therefore, the periphery of the prepared thin film has the problem of one side being thin, which affects the yield of the product.

[0050] Figure 2 For Figure 1 The thickness distribution of the film prepared in the chamber shown in FIG. Figure 2 As shown, in the thickness distribution diagram, the lower right part has a darker blue color, and the upper left part has a darker red color, which means that the thickness of the lower right part of the dielectric layer is thinner, and the thickness of the upper left part is thicker, which further illustrates that the thickness of the formed film is not uniform.

[0051] Based on this, the embodiment of the present disclosure provides a thin film deposition device and method, wherein the thin film deposition device includes: a rotating disk, arranged inside a reaction chamber; a plurality of carriers, arranged on the rotating disk, used to carry the parts to be deposited and rotate with the rotating disk when the rotating disk rotates; a rotating mechanism, connected between the rotating disk and the carrier, used to drive the carrier to rotate in the same direction as the rotation direction of the rotating disk; a control mechanism, connected to the rotating disk and the rotating mechanism, used to control the rotating disk to rotate at a first preset speed during the thin film deposition process, and control the rotating mechanism to drive the carrier to rotate at a second preset speed. Since the thin film deposition device in the embodiment of the present disclosure includes a rotating mechanism connected between the rotating disk and the carrier, and the rotating mechanism can drive the carrier carrying the parts to be deposited to rotate in the same direction as the rotation direction of the rotating disk, in this way, the rotating disk revolves and the carrier rotates during the thin film deposition process, which can reduce the influence of the airflow inside the reaction chamber on the deposition of reactants, improve the uniformity of the film thickness of the deposited film, and thus improve the overall yield of the product.

[0052] The thin film deposition device and method in the embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.

[0053] An embodiment of the present disclosure provides a thin film deposition device, please refer to Figure 3 and Figure 4 , Figure 3 and Figure 4 FIG. 2 shows a schematic diagram of the structure of a thin film deposition device provided by an embodiment of the present disclosure. Figure 3 and Figure 4 As shown, the thin film deposition device 20 includes:

[0054] The rotating disk 211 is disposed inside the reaction chamber 21;

[0055] A plurality of carriers 212 are disposed on the rotating disk 211 and are used to carry the objects to be deposited 214 and rotate with the rotating disk 211 when the rotating disk 211 rotates;

[0056] The rotating mechanism 213 is connected between the rotating disk 211 and the supporting platform 212, and is used to drive the supporting platform 212 to rotate in the same direction as the rotating disk 211;

[0057] The control mechanism 215 is connected to the rotating disk 211 and the rotating mechanism 213, and is used to control the rotating disk 211 to rotate at a first preset speed during the thin film deposition process, and control the rotating mechanism 213 to drive the supporting platform 212 to rotate at a second preset speed.

[0058] It should be noted that the thin film deposition device 20 in the embodiment of the present disclosure may be a chemical vapor deposition device, for example, an organic metal chemical vapor deposition device or a deposition device. High dielectric material layer .

[0059] In the disclosed embodiment, the main reaction process of the thin film deposition device 20 is carried out in the reaction chamber 21. The top of the reaction chamber 21 has an opening, so that the object to be deposited 214 can be placed on the carrier 212 through the opening or the object to be deposited 214 that has completed thin film deposition can be transported out of the reaction chamber 21 through the opening. The carrier 212 is located on the surface of the rotating disk 211, and the rotating disk 211 is arranged inside the reaction chamber 21. The structure of the rotating disk 211 can be, for example, a hollow cylinder or a bracket structure. The rotating disk 211 can rotate clockwise or counterclockwise in the reaction chamber 21 according to process requirements.

[0060] It should be noted that, usually, a plurality of carriers 212, for example, 6, are closely arranged on the rotating disk 211, so as to obtain a greater space utilization and deposition efficiency. Figure 3 and Figure 4 Two supporting platforms 212 are shown in the cross-sectional view.

[0061] It should also be noted that the object to be deposited 214 may be, for example, a wafer or other structure on which a thin film needs to be deposited. The object to be deposited 214 and the carrier 212 are usually fixed by adsorption, but not limited thereto.

[0062] In the disclosed embodiment, the rotating mechanism 213 is disposed between the rotating disk 211 and the carrier 212. The rotating mechanism 213 enables the carrier 212 to rotate relative to the rotating disk 211, that is, to realize the self-rotation of the carrier 212. Since the part to be deposited 214 is fixedly connected to the carrier 212, the rotating structure 213 can drive the carrier 212 and the part to be deposited 214 to self-rotate synchronously. It is worth noting that the self-rotation direction of the carrier 212 and the part to be deposited 214 is consistent with the rotation direction of the rotating disk 211. Here, the rotating mechanism 213 can be a rotating shaft.

[0063] It is worth noting that the thin film deposition device 20 provided in the embodiment of the present disclosure can, during the thin film deposition process, firstly, drive the rotating structure 213, the carrier 212 and the part to be deposited 214 to rotate synchronously through the rotation of the rotating disk 211, and at this time, the rotating structure 213, the carrier 212 and the part to be deposited 214 have the same rotation speed and rotation direction; secondly, the rotating structure 213 can further drive the carrier 212 and the part to be deposited 214 to rotate in the same direction as the rotating disk 211, and at this time, the total rotation speed of the carrier 212 and the part to be deposited 214 is greater than the rotation speed of the rotating disk 211. In this way, during the thin film deposition process, the rotating disk revolves while the carrier rotates, which can reduce the influence of the airflow inside the reaction chamber 21 on the deposition of the reactants, improve the uniformity of the film thickness of the deposited film, and thus improve the overall yield of the product.

[0064] In some embodiments, the thin film deposition equipment 20 also includes a gas supply system (not shown), and the upper part of the reaction chamber 21 is also provided with a nozzle, and the nozzle head is arranged opposite to the supporting platform 212. Therefore, the reaction gas entering the nozzle head can be sprayed toward the reaction chamber 21 through the nozzle hole on the nozzle head. After the reaction gas undergoes a chemical reaction under certain conditions, a thin film is formed on the surface of the deposited part 214.

[0065] In other embodiments, the thin film deposition apparatus 20 further includes a heating device (not shown), which is disposed below the rotating disk 211 and is used to heat the object to be deposited 214 on the surface of the carrier 212. Here, the rotation of the rotating disk 211 does not drive the rotation of the heating device, so that the object to be deposited 214 can be evenly heated during the deposition process.

[0066] In some embodiments, see Figure 3 and Figure 4 The thin film deposition device 20 further includes a control mechanism 215, which is disposed outside the reaction chamber 21. The control mechanism 215 may be, for example, a control cabinet including a signal receiving device, a control system, a display panel, and the like.

[0067] In the disclosed embodiment, the control mechanism 215 is connected to the rotating disk 211 and the rotating mechanism 213, and is used to control the revolution of the rotating disk 211 and the self-rotation of the rotating mechanism 213. For example, during the thin film deposition process, the rotating disk 211 is controlled to rotate at a first preset speed, and the rotating mechanism 213 is controlled to drive the carrier 212 to self-rotate at a second preset speed. It should be noted that when the control mechanism 215 controls the rotating disk 211 to rotate at the first preset speed, the carrier 212 and the object to be deposited 214 also have the first preset speed. When the control mechanism 215 controls the rotating mechanism 213 to drive the carrier 212 to self-rotate at the second preset speed, the carrier 212 and the object to be deposited 214 at this time not only have a revolution speed of the first preset speed, but also have a self-rotation speed of the second preset speed, that is, the rotation speed of the carrier 212 at this time is the sum of the first preset speed and the second preset speed.

[0068] It should also be noted that the second preset speed may be greater than the first preset speed, or less than or equal to the first preset speed. In the embodiment of the present disclosure, the specific magnitude relationship between the first preset speed and the second preset speed is not limited.

[0069] In some embodiments, please refer to Figure 3 and Figure 4 The thin film deposition device 20 further includes: a vacuum unit 216; the vacuum unit 216 is used to vacuum the reaction chamber 21 through two vacuum pipes; the pipe openings of the two vacuum pipes are respectively arranged on both sides of the diameter direction of the rotating disk 211.

[0070] Please refer to Figure 3 and Figure 4 In the embodiment of the present disclosure, the two exhaust pipes are respectively a first exhaust pipe 217 and a second exhaust pipe 218, wherein the exhaust ports of the first exhaust pipe 217 and the second exhaust pipe 218 are respectively arranged on both sides of the rotating disk 211 in the diameter direction thereof.

[0071] In the embodiment of the present disclosure, the first air extraction pipeline 217 and the second air extraction pipeline 218 can be connected to one air extraction unit 216, or can be connected to different air extraction units 216 respectively. Figure 3 and Figure 4 Only one exhaust unit 216 is shown as an example.

[0072] Here, the air extraction unit 216 may be a vacuum pump.

[0073] It should be noted that the gas extraction unit 216 can respectively vacuum the gas in the first area and the second area of ​​the reaction chamber 21 through the first gas extraction pipeline 217 and the second gas extraction pipeline 218. For example, the first area can be an O3 waste gas area, and the second area can be a source gas area.

[0074] In the disclosed embodiment, the exhaust unit 216 is disposed outside the reaction chamber 21 , and an exhaust port is provided on the reaction chamber 21 . The first exhaust pipe 217 and the second exhaust pipe 218 vacuum the gas inside the reaction chamber 21 through the exhaust port.

[0075] In some embodiments, since the gas inside the reaction chamber 21 needs to be continuously evacuated during the thin film deposition process, the airflow at the outlets of the first exhaust pipe 217 and the second exhaust pipe 218 is dense and the gas flow rate is large. During the thin film process, the reaction gas is sprayed into the reaction chamber and flows through the periphery of the deposited part (i.e., the exhaust port) and will be quickly exhausted, making the prepared film thinner near the exhaust port side.

[0076] In some embodiments, please refer to Figure 4 The thin film deposition device 20 also includes: an alignment mechanism 219, which is connected to the control mechanism 215 and is used to automatically calibrate the piece to be deposited 214 to an initial angle before thin film deposition; the control mechanism 215 is also used to control the alignment mechanism 219 to drive the piece to be deposited to rotate a preset angle after the piece to be deposited 214 is automatically calibrated to the initial angle.

[0077] In some embodiments, the thin film deposition apparatus 20 further includes an optical system, an optical element, and a light detector disposed in the transmission cavity 22 .

[0078] It should be noted that the alignment mechanism 219 can be an aligner or an automatic edge finder, and its principle is based on optical measurement technology, that is, a beam of light is irradiated on the surface of the part to be deposited 214, and then the reflected light is focused onto a light detector through optical elements. The light detector measures the intensity and position of the reflected light, and transmits this information to the control mechanism 215 for processing. The control mechanism 215 can determine the position and direction of the part to be deposited 214 through a series of calculations, thereby achieving alignment.

[0079] It should also be noted that the alignment mechanism 219 is arranged in the transmission chamber 22 outside the reaction chamber 21. Therefore, the alignment process occurs before each thin film deposition process, that is, each time deposition is performed on the surface of the object to be deposited 214, the object to be deposited 214 will first be transported to the transmission chamber 22, and after the position and direction of the object to be deposited 214 are calibrated by the alignment mechanism 219 in the transmission chamber 22, it will be transported to the reaction chamber 21 by the robot for thin film deposition.

[0080] The specific calibration process is described below by taking the object to be deposited 214 as a wafer as an example.

[0081] First, the wafer is placed on the alignment stage of the alignment mechanism 219 by a robot, and the alignment stage is moved into the field of view of the optical system; secondly, the position and intensity of the light source are controlled by the control mechanism 215 to illuminate the surface of the wafer, and the light detector measures the intensity and position of the reflected light. Finally, the control mechanism 215 determines the position and direction of the notch of the wafer based on the information of the reflected light, and transmits this information to the mechanical system. The control mechanism 215 controls the alignment mechanism 219 to align with the notch of the wafer, thereby realizing automatic calibration of the wafer to the initial angle. Here, the initial angle can be considered to be 0 degrees.

[0082] In the embodiment of the present disclosure, after the object to be deposited 214 is automatically calibrated to the initial angle, the control mechanism 215 can be used to control the alignment mechanism 219 to rotate to a preset angle, that is, the object to be deposited 214 is driven to rotate to a preset angle by the alignment mechanism 219. Here, the preset angle can be any angle less than 360 degrees, such as 30 degrees, 50 degrees, 90 degrees, 180 degrees, 270 degrees, etc.

[0083] Another embodiment of the present disclosure provides a thin film deposition method, which is applied to the above-mentioned embodiment. Figure 4 The thin film deposition apparatus 20 shown is used to deposit a thin film on a workpiece. Figure 5 A schematic diagram of a thin film deposition method provided in an embodiment of the present disclosure is provided. Figure 6-Figure 10 A schematic diagram of the structure of the thin film deposition process provided in the embodiment of the present disclosure, such as Figure 5-10As shown, the thin film deposition method includes the following steps S601 to S605:

[0084] First, refer to Figure 5 and Figure 6 , executing step S601, providing a to-be-deposited object 214;

[0085] Here, the object to be deposited 214 may be a wafer or other structure on which a thin film needs to be deposited.

[0086] Secondly, refer to Figure 5-Figure 7 , executing step S602, when the first preset speed is controlled to be greater than 0 by the control mechanism 215, a first dielectric layer 30 is deposited on the surface of the object to be deposited 214; wherein the thickness of the first dielectric layer 30 close to the exhaust pipe side is less than the thickness of the first dielectric layer 30 away from the exhaust pipe side;

[0087] It should be noted that the first dielectric layer 30 can be a single film, two films or multiple films. When the first dielectric layer 30 includes a single film, it can be formed by a single deposition process, and when the first dielectric layer 30 includes multiple films, it needs to be formed by multiple deposition processes.

[0088] The film formed in the embodiments of the present disclosure may be a dielectric layer constituting a capacitor, or may be other film layers. The following description is made by taking the formation of a dielectric layer of a capacitor as an example. In some embodiments, when forming the dielectric layer, the first preset speed is 1-5 revolutions per minute (rpm).

[0089] When forming the dielectric layer of the capacitor, the deposited part 214 includes at least a first electrode layer, and the first dielectric layer 30 is formed on the surface of the first electrode layer. Here, the first electrode layer is the upper electrode layer of the capacitor, and the material of the first electrode layer can be, for example, titanium nitride. The first dielectric layer 30 can be a high-K material layer, and the material of the first dielectric layer 30 can be, for example, zirconium oxide (ZrO2), HfO2, lanthanum oxide (La2O3), aluminum oxide (Al2O3) or hafnium oxynitride (HfON).

[0090] In the embodiment of the present disclosure, the first dielectric layer 30 includes a first sub-dielectric layer 301 and a second sub-dielectric layer 302 located on the surface of the first sub-dielectric layer 301. The specific formation process of the first dielectric layer 30 is as follows: first, a dielectric layer 301 is formed on the surface of the object to be deposited 214. Figure 6The first sub-dielectric layer 301 is formed, and then the deposited object 214 formed with the first sub-dielectric layer 301 is transferred out of the reaction chamber 21. Next, before forming the second sub-dielectric layer 302, the deposited object 214 formed with the first sub-dielectric layer 301 is transferred to the transmission chamber 22, and automatically calibrated to the initial angle by the alignment mechanism 219. Next, the deposited object 214 calibrated to the initial angle is transferred to the reaction chamber 21 to form the first sub-dielectric layer 301 on the surface of the first sub-dielectric layer 301. Figure 7 The second sub-dielectric layer 302 shown, the first sub-dielectric layer 301 and the second sub-dielectric layer 302 together constitute the first dielectric layer 30 .

[0091] In the embodiment of the present disclosure, since it is necessary to continuously evacuate the gas inside the reaction chamber 21 when forming the first sub-dielectric layer 301 and the second sub-dielectric layer 302, the gas at the outlet of the exhaust pipe (i.e., the first exhaust pipe 217 and the second exhaust pipe 218) is dense and has a high gas flow rate. The reaction gas forming the first sub-dielectric layer 301 and the second sub-dielectric layer 302 will be quickly extracted when flowing through the exhaust port, so that the prepared first sub-dielectric layer 301 and the second sub-dielectric layer 302 are relatively thin on the side close to the exhaust pipe (e.g., the first exhaust pipe 217) and relatively thick on the side away from the exhaust pipe, thereby making the formed first dielectric layer 30 relatively thin on the side close to the exhaust pipe and relatively thick on the side away from the exhaust pipe, that is, the thickness of the formed first dielectric layer 30 is uneven (e.g., Figure 7 shown).

[0092] It should be noted that, in the embodiment of the present disclosure, the thickness of the first dielectric layer 30 is less than 10 nanometers (nm), and the thickness of the second sub-dielectric layer 302 is greater than the thickness of the first sub-dielectric layer 301 .

[0093] It is worth noting that when forming the first dielectric layer 30, the rotation speed of the rotating disk 211 is greater than 0, and the rotation speeds of the carrier 212 and the object to be deposited 214 are equal to the rotation speed of the rotating disk 211. For example, when forming the first dielectric layer 30, the first preset speed for controlling the rotation of the rotating disk 211 may be 1-5 rpm, and at this time, the rotating disk 211 drives the carrier 212 and the object to be deposited 214 to rotate at the first preset speed of 1-5 rpm.

[0094] Next, please refer to Figure 5 , executing step S603, automatically calibrating the to-be-deposited object 214 formed with the first dielectric layer to an initial angle through the alignment mechanism 219;

[0095] Here, the initial angle may be 0 degrees. In the disclosed embodiment, after forming the second sub-dielectric layer 302 (i.e., the first dielectric layer 30), the to-be-deposited part 214 formed with the first dielectric layer 30 is transferred out of the reaction chamber 21, and then, before forming another film layer (e.g., the second dielectric layer), the to-be-deposited part 214 formed with the first dielectric layer 30 is transferred to the transmission chamber 22, and automatically calibrated to the initial angle by the alignment mechanism 219, i.e., the to-be-deposited part 214 formed with the first dielectric layer 30 is automatically calibrated to the initial zero degree.

[0096] It should be noted that the process of automatically calibrating to the initial angle can be understood by referring to the above embodiment, which will not be described in detail here.

[0097] Next, please refer to Figure 5 and Figure 8 , executing step S604, controlling the alignment mechanism 219 through the control mechanism 215 to drive the object to be deposited 214 to rotate a preset angle;

[0098] Here, the preset angle may be any angle smaller than 360 degrees, for example, 180 degrees.

[0099] In the embodiment of the present disclosure, after the object to be deposited 214 with the first dielectric layer 30 formed thereon is automatically calibrated to the initial angle by the alignment mechanism 219, the control mechanism 215 issues an instruction to rotate the alignment mechanism 219 180 degrees. During the rotation process, the alignment mechanism 219 drives the object to be deposited 214 with the first dielectric layer 30 formed thereon to rotate 180 degrees, that is, the object to be deposited 214 is formed as shown in FIG. Figure 8 The structure shown. Figure 8 It can be seen that the thickness of the rotated first dielectric layer 30 at the side close to the exhaust pipe (ie, the first exhaust pipe 217 ) is greater than the thickness at the side away from the exhaust pipe.

[0100] Finally, please refer to Figure 5 and Fig. 9 , execute step S605, and when the first preset speed is controlled to be greater than 0 by the control mechanism 215, the second dielectric layer 31 is deposited on the surface of the first dielectric layer 30 after rotating by the preset angle, so that the difference between the total thickness of the first dielectric layer 30 and the second dielectric layer 31 close to the exhaust pipe side and the total thickness of the first dielectric layer 30 and the second dielectric layer 31 away from the exhaust pipe side is within a preset range.

[0101] It should be noted that in the embodiment of the present disclosure, the second dielectric layer 31 and the first dielectric layer 30 may be made of the same material, such as zirconium oxide. In other embodiments, the second dielectric layer 31 and the first dielectric layer 30 may also be made of different materials.

[0102] It should also be noted that due to the formation of Fig. 9When the second dielectric layer 31 shown is formed, it is necessary to continuously evacuate the waste gas inside the reaction chamber 21. Therefore, the airflow at the outlet of the exhaust pipe (i.e., the first exhaust pipe 217 and the second exhaust pipe 218) is dense and the gas flow rate is large. The reaction gas forming the second dielectric layer 31 will be quickly drawn away when it flows through the outlet of the exhaust pipe, so that the prepared second dielectric layer 31 is relatively thin near the exhaust pipe side and relatively thick away from the exhaust pipe side, that is, the thickness of the formed second dielectric layer 31 is uneven. In this way, the difference between the total thickness of the first dielectric layer 30 and the second dielectric layer 31 near the exhaust pipe side and the total thickness of the first dielectric layer 30 and the second dielectric layer 31 away from the exhaust pipe side can be within a preset range.

[0103] In the embodiment of the present disclosure, the preset range may be, for example, 0.1-0.15 nm. That is, before forming the second dielectric layer 31, the first dielectric layer 30 is rotated 180 degrees, so that the total thickness of the first dielectric layer 30 and the second dielectric layer 31 formed is slightly different at the side close to the exhaust pipe and the side far from the exhaust pipe, that is, the total thickness of the first dielectric layer 30 and the second dielectric layer 31 becomes uniform.

[0104] It is worth noting that when forming the second dielectric layer 31, the rotation speed of the rotating disk 211 is greater than 0, and the rotation speeds of the carrier 212 and the object to be deposited 214 are equal to the rotation speed of the rotating disk 211. For example, when forming the second dielectric layer 31, the first preset speed for controlling the rotation of the rotating disk 211 may be 1-5 rpm, and at this time, the rotating disk 211 drives the carrier 212 and the object to be deposited 214 to rotate at the first preset speed of 1-5 rpm.

[0105] In the embodiment of the present disclosure, due to the influence of the thin film deposition equipment, the first dielectric layer 30 and the second dielectric layer 31 formed are both relatively thin near the exhaust pipe side and relatively thick away from the exhaust pipe side. However, in the embodiment of the present disclosure, before forming the second dielectric layer 31, the formed first dielectric layer 30 is rotated 180 degrees, so that the rotated first dielectric layer 30 is relatively thick near the exhaust pipe side and relatively thin away from the exhaust pipe side. In this way, when the second dielectric layer 31 is formed on the surface of the rotated first dielectric layer 30, the uneven thickness of the second dielectric layer 31 will compensate for the uneven thickness of the rotated first dielectric layer 30, so that the thickness of the first dielectric layer 30 and the second dielectric layer 31 formed in the end becomes uniform.

[0106] Fig.11 and Fig.12 The figure shows the distribution diagram of the leakage of the upper plate of the dielectric layer formed by different processes of the first dielectric layer and the second dielectric layer as the dielectric layer, wherein: Fig.11 The second dielectric layer 31 is formed without rotating the first dielectric layer 30. Fig.12The second dielectric layer 31 is formed when the first dielectric layer 30 is rotated 180 degrees. Fig.11 It can be seen that when the first dielectric layer 30 does not rotate, the second dielectric layer 31 formed has the same thickness distribution as the first dielectric layer 30, that is, the first dielectric layer 30 and the second dielectric layer 31 are both thinner near the exhaust pipe side and thicker away from the exhaust pipe side. Therefore, the first dielectric layer 30 and the second dielectric layer 31 serve as the dielectric layers of the capacitor, and the side near the exhaust pipe side (i.e. Fig.11 The lower right part of the middle part has serious leakage (i.e. darker color), and is far away from the exhaust pipe side (i.e. Fig.11 The upper left part of the figure has a smaller leakage current (i.e., the color is lighter). Fig.12 In the embodiment, when the first dielectric layer 30 is rotated 180 degrees, the non-uniformity of the thickness of the formed second dielectric layer 31 can compensate for the non-uniformity of the thickness of the first dielectric layer 30, that is, the thickness of the first dielectric layer 30 and the second dielectric layer 31 as a whole is relatively uniform. Therefore, the first dielectric layer 30 and the second dielectric layer 31 as the dielectric layer of the capacitor have a small overall leakage (i.e. Fig.12 The color is lighter and more uniform).

[0107] In some embodiments, the thickness of the second dielectric layer 31 is 1.1-1.2 times the thickness of the first dielectric layer 30. In other embodiments, the thickness of the second dielectric layer 31 may also be 1.4-1.5 times the thickness of the first dielectric layer. The inventors of the present application creatively discovered in their research that when the thickness of the second dielectric layer 31 is 1.1-1.2 times the thickness of the first dielectric layer 30, the leakage rate of the dielectric layer finally formed will be smaller.

[0108] In some embodiments, see Fig.10 After forming the second dielectric layer 31, the method further includes: when the first preset speed is controlled to be greater than 0 by the control mechanism 215, a third dielectric layer 32 is formed on the surface of the second dielectric layer 31; wherein the thickness of the third dielectric layer 32 is less than the thickness of the first dielectric layer 30; the first dielectric layer 30, the second dielectric layer 31 and the third dielectric layer 32 constitute a dielectric layer.

[0109] In some embodiments, the third dielectric layer 32 may be composed of a single film or multiple films. When the third dielectric layer 32 includes a single film, it may be formed by a single deposition process. When the third dielectric layer 32 includes multiple films, it may be formed by multiple deposition processes.

[0110] In the embodiment of the present disclosure, the third dielectric layer 32 as a part of the capacitor dielectric layer may include three layers of films, for example, aluminum oxide film, zirconium oxide film and aluminum oxide film. Among them, the first dielectric layer 30, the second dielectric layer 31, and the zirconium oxide film in the third dielectric layer 32 can be used as an inductive dielectric layer of the high-K dielectric layer, and the inductive dielectric layer has a high dielectric constant, but has severe leakage; the aluminum oxide film in the third dielectric layer 32 can be used as an anti-dielectric layer in the third dielectric layer 32, and the anti-dielectric layer is used to suppress the leakage of the inductive dielectric layer.

[0111] In some embodiments, the thickness of the third dielectric layer 32 is less than that of the first dielectric layer 30 . The thickness of the first dielectric layer 30 is less than 10 nm, that is, the thickness of the third dielectric layer 32 is less than 10 nm.

[0112] In the disclosed embodiment, the thickness distribution of the formed third dielectric layer 32 is consistent with the thickness distribution of the second dielectric layer 31 and the first dielectric layer 30, that is, the thickness is thinner near the exhaust pipe side and thicker away from the exhaust pipe side. However, since the thickness of the third dielectric layer 32 is very small, the third dielectric layer 32 contributes very little to the thickness of the entire dielectric layer, and therefore, the unevenness of the thickness of the third dielectric layer 32 can be ignored.

[0113] It is worth noting that when forming the third dielectric layer 32, the rotation speed of the rotating disk 211 is greater than 0, and the rotation speeds of the carrier 212 and the object to be deposited 214 are equal to the rotation speed of the rotating disk 211. For example, when forming the third dielectric layer 32, the first preset speed for controlling the rotation of the rotating disk 211 may be 1-5 rpm, and at this time, the rotating disk 211 drives the carrier 212 and the object to be deposited 214 to rotate at the first preset speed of 1-5 rpm.

[0114] It should be noted that, in the embodiment of the present disclosure, when forming the first dielectric layer 30, the second dielectric layer 31 and the third dielectric layer 32, the first preset rotation speeds of the rotating disk 211 are all equal, for example, 2 rpm or 4 rpm, and the second preset rotation speeds of the rotating mechanism 213 are all 0. That is to say, in the embodiment of the present disclosure, when forming the first dielectric layer 30, the second dielectric layer 31 and the third dielectric layer 32, there is only the revolution of the rotating disk 211, and there is no self-rotation of the supporting platform 212.

[0115] In some embodiments, when the dielectric layer is formed, the pressure of the reaction chamber 21 is 1.5-2.5 Torr.

[0116] In the embodiment of the present disclosure, when forming the dielectric layer, after forming the first dielectric layer 30, the first dielectric layer 30 and the deposited object 214 are rotated 180 degrees together, and then the second dielectric layer 31 is formed, and finally the third dielectric layer 32 is formed. Since the thickness of the second dielectric layer 31 is close to that of the first dielectric layer 30, the thickness distribution of the first dielectric layer 30 can be compensated by the thickness distribution of the second dielectric layer 31. In this way, a dielectric layer with uniform thickness can be obtained, thereby reducing the leakage of the capacitor.

[0117] Another embodiment of the present disclosure provides a thin film deposition method, which is applied to the above Figure 4 The thin film deposition device 20 shown is used to deposit a thin film on a workpiece. Figure 5 The thin film deposition method shown further includes the following steps:

[0118] When depositing a thin film, the second preset speed is controlled to be greater than 0 by the control mechanism 215 .

[0119] It should be noted that, in the embodiment of the present disclosure, when forming the first dielectric layer 30 and the second dielectric layer 31, the rotating disk 211 has a first preset speed, that is, the rotating disk 211 drives the carrier 212 and the deposited object 214 to rotate at the first preset speed. In addition, the rotating mechanism 213 also drives the carrier 212 and the deposited object 214 to self-rotate at the second preset speed. At this time, the total rotation speed of the carrier 212 and the deposited object 214 is the sum of the first preset speed and the second preset speed. In other words, in the embodiment of the present disclosure, while the rotating disk 211 revolves, the carrier 212 also self-rotates, so that the uniformity of the film thickness can be improved.

[0120] In some embodiments, the thin film deposition method further includes: controlling the sum of the first preset speed and the second preset speed to be no greater than 15rpm. The inventors of the present application creatively discovered in their research that when the sum of the first preset speed and the second preset speed is greater than 15rpm, there are too many particles in the first dielectric layer 30 or the second dielectric layer 31. Specifically, when forming the dielectric layer, if the sum of the revolution speed of the rotating disk 211 (i.e., the first preset speed) and the rotation speed of the carrier 212 (i.e., the second preset speed) is greater than 15rpm, the particles of the formed thin film will aggregate, the bonding force between the thin films will weaken, they will easily fall off, and the thickness of the formed thin film will be more uneven. Therefore, preferably, when depositing the thin film, the sum of the first preset speed and the second preset speed is controlled to be 6-12rpm.

[0121] It should also be noted that in the embodiment of the present disclosure, when the third dielectric layer 32 is subsequently formed, the second preset speed can also be controlled by the control mechanism 215 to be greater than 0, so as to further improve the uniformity of the thickness of the third dielectric layer 32. In other embodiments, when the third dielectric layer 32 is subsequently formed, the second preset speed can also be controlled to be equal to 0, because the thickness of the third dielectric layer 32 is small, and its contribution to the uniformity of the thickness of the entire dielectric layer can be ignored.

[0122] It is worth noting that when forming the third dielectric layer 32 , the sum of the first preset speed and the second preset speed may also be controlled to be 6-12 rpm.

[0123] In the embodiment of the present disclosure, during the entire process of forming the dielectric layer, the carrier is controlled to revolve at a first preset speed while the carrier is controlled to rotate at a second preset speed. Moreover, after forming the first dielectric layer 30, the first dielectric layer 30 and the deposited part 214 are rotated 180 degrees together, and then the second dielectric layer 31 is formed, and finally the third dielectric layer 32 is formed. In this way, on the one hand, the uniformity of the film thickness of the dielectric layer can be improved by the revolution of the rotating disk 211 and the rotation of the carrier 212, and on the other hand, the uniformity of the film thickness of the dielectric layer can be improved by compensating the thickness distribution of the first dielectric layer 30 through the thickness distribution of the second dielectric layer 31. In this way, a dielectric layer with uniform thickness can be obtained, which reduces the leakage of the capacitor.

[0124] Another embodiment of the present disclosure provides a thin film deposition method, which is applied to the above-mentioned embodiment Figure 4 The thin film deposition apparatus 20 shown is used to deposit a thin film on a workpiece. Fig.13 A schematic diagram of another thin film deposition method provided by an embodiment of the present disclosure is shown in FIG. Fig.13 As shown, the thin film deposition method includes the following steps S141 and S142:

[0125] Step S141, providing a part to be deposited 214;

[0126] Here, the object to be deposited 214 may be a wafer or other structure on which a thin film needs to be deposited.

[0127] Step S142 : When the second preset speed and the first preset speed are both controlled by the control mechanism 215 to be greater than 0, a preset thin film is deposited on the surface of the object to be deposited 214 to form a preset thin film.

[0128] It should be noted that the preset film formed in the embodiment of the present disclosure may be a dielectric layer constituting a capacitor, or may be any other required film layer. The following description will be made by taking the preset film as a dielectric layer of a capacitor as an example.

[0129] When forming the dielectric layer of the capacitor, the deposited object 214 at least includes a first electrode layer, and the preset thin film is formed on the surface of the first electrode layer, and the first electrode layer is the upper electrode layer of the capacitor. The first dielectric layer 30 can be a high-K material layer.

[0130] Here, the preset film may include a first dielectric layer, a second dielectric layer and a third dielectric layer, wherein the materials of the first dielectric layer, the second dielectric layer and the third dielectric layer are all high-K dielectric layers, such as zirconium oxide and / or aluminum oxide.

[0131] It should be noted that, during the process of forming the first dielectric layer, the second dielectric layer and the third dielectric layer, the rotating disk 211 revolves at a first preset speed greater than 0, and the supporting platform 212 rotates at a second preset speed greater than 0 while revolving with the rotating disk 211. In this way, the reaction gas can form a uniform film on the surface of the deposited piece 214, that is, the uniformity of the film thickness of the formed first dielectric layer, the second dielectric layer and the third dielectric layer is improved.

[0132] In the disclosed embodiment, the first preset speed can be controlled to be 1-5 rpm, and the ratio of the first preset speed to the second preset speed is 6-12 rpm. In this way, the formed film particles can be prevented from agglomerating, the bonding force between the films can be weakened, and the films can be easily detached, thereby making the formed film thickness more uniform.

[0133] In the disclosed embodiment, the first dielectric layer may include a first sub-dielectric layer and a second sub-dielectric layer located on the surface of the first sub-dielectric layer. The thickness of the first sub-dielectric layer is less than the thickness of the second sub-dielectric layer, the thickness of the third dielectric layer is less than the thickness of the first dielectric layer, and the thickness of the first dielectric layer is less than 10 nm. In one embodiment, the first sub-dielectric layer may be a zirconium oxide layer, and the second sub-dielectric layer may be a zirconium oxide layer.

[0134] In the disclosed embodiment, the thickness of the second dielectric layer is 1.1-1.2 times the thickness of the first dielectric layer. In other embodiments, the thickness of the second dielectric layer can also be 1.4-1.5 times the thickness of the first dielectric layer. In comparison, when the thickness of the second dielectric layer is 1.1-1.2 times the thickness of the first dielectric layer, the leakage rate of the dielectric layer finally formed will be smaller. In one embodiment, the second dielectric layer can be a zirconium oxide layer.

[0135] In one implementation, the third dielectric layer may be an aluminum oxide layer, a zirconium oxide layer, and an aluminum oxide layer stacked in sequence.

[0136] In some embodiments, when forming the first dielectric layer, the second dielectric layer, and the third dielectric layer, the pressure of the reaction chamber 21 is 1.5-2.5 Torr.

[0137] In the thin film deposition method provided by the embodiment of the present disclosure, when forming a preset thin film, the rotating disk 211 revolves at a first preset speed while the supporting platform 212 rotates at a second preset speed. In this way, the reaction gas can form a uniform film on the object to be deposited through the revolution of the rotating disk 211 and the rotation of the supporting platform 212, thereby improving the thickness uniformity of the prepared thin film.

[0138] The thin film deposition method provided in the embodiment of the present disclosure is similar to the thin film deposition method provided in the above-mentioned embodiment. For the technical features not fully disclosed in the embodiment of the present disclosure, please refer to the above-mentioned embodiment for understanding.

[0139] The capacitor of dynamic random access memory (DRAM) is generally composed of an upper electrode, a dielectric layer and a lower electrode. According to the capacitance calculation formula, the capacitance value is proportional to the area between the upper and lower electrodes and the dielectric layer. With the development of dynamic memory, the pursuit of high speed, high integration density, and low power consumption has become a trend. This will cause the area of ​​the storage unit to be reduced, and the amount of charge that the storage unit can store will be reduced, resulting in high read and write frequencies and increased energy consumption. And with the miniaturization of semiconductor device structure size, especially in the manufacturing process of dynamic random access memory with a critical size of less than 20 nanometers, the thickness of the oxide layer has approached the limit of the quantum tunneling effect, causing the leakage current to increase exponentially as the thickness of the oxide decreases.

[0140] Without increasing the oxide thickness, there are generally two ways to reduce capacitor leakage: one is to replace the anti-leakage material, and the other is to improve the thickness uniformity of the deposited film.

[0141] The disclosed embodiments utilize the optimization of the high dielectric material deposition process and the optimization of the deposition machine structure to improve the uniformity of high dielectric material deposition and reduce leakage caused by uneven deposition film thickness. Specifically, the reaction chamber flow field effect is improved by optimizing the high dielectric material deposition process and changing the deposition machine structure.

[0142] The disclosed embodiment specifically includes the following two aspects of improvement: first, using the non-uniform film thickness characteristics of different layers of high dielectric material films in the same direction to compensate (Compensate); second, using the change of the deposition machine structure to achieve the revolution and rotation of the rotating disk (main disk) and the carrier (stage), so that the reaction gas forms a uniform film on the wafer. In other words, fully utilizing the current film formation characteristics to optimize the deposition process and change the structure to achieve uniform film thickness and improve the overall product yield.

[0143] In some embodiments, the high dielectric material film generally includes 6 layers of thin films, namely, the first layer of ZrO2, the second layer of ZrO2, the third layer of ZrO2, the fourth layer of Al2O3, the fifth layer of ZrO2 and the sixth layer of Al2O3. In the disclosed embodiment, the third layer of ZrO2 is rotated 180° to compensate for the thinner area in the lower right corner of the first layer of ZrO2 and the second layer of ZrO2, thereby improving the deposition uniformity of the high dielectric material film. Here, the ratio of the thickness of the third layer of ZrO2 to the sum of the thickness of the first layer of ZrO2 and the second layer of ZrO2 is 1.1-1.2. The sum of the thickness of the first layer of ZrO2 and the second layer of ZrO2 is less than 10nm, and the thickness of the second layer of ZrO2 is greater than the thickness of the first layer of ZrO2, and the sum of the thickness of the fourth layer of Al2O3, the fifth layer of ZrO2, and the sixth layer of Al2O3 is less than the sum of the thickness of the first layer of ZrO2 and the second layer of ZrO2.

[0144] In some embodiments, the structure of the deposition machine is improved so that the main disk and the stage rotate synchronously. The rotation speed of the main disk is 1-5 rpm, and the rotation speed of the stage is 6-12 rpm. While the main disk revolves, the stage rotates to reduce the influence of the internal flow field on the deposition of reactants, improve the deposition step coverage, and achieve uniform film thickness of the entire wafer.

[0145] In some embodiments, while the main disk and the stage are rotated synchronously, the third ZrO2 layer can be rotated 180° to compensate for the thinner area at the lower right corner of the second ZrO2 layer and the third ZrO2 layer to achieve uniform film thickness across the wafer.

[0146] In the several embodiments provided in the present disclosure, it should be understood that the disclosed structures and methods can be implemented in a non-targeted manner. The structural embodiments described above are only schematic. For example, the division of units is only a logical function division. There may be other division methods in actual implementation, such as: multiple units or components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the components shown or discussed are coupled or directly coupled to each other.

[0147] The features disclosed in several method or structural embodiments provided in the present disclosure may be arbitrarily combined without conflict to obtain new method embodiments or structural embodiments.

[0148] The above are only some embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A thin film deposition device, characterized in that: include: A rotating disk is arranged inside the reaction chamber; A plurality of carrying platforms, arranged on the rotating disk, for carrying the objects to be deposited and rotating with the rotating disk when the rotating disk rotates; A rotating mechanism, connected between the rotating disk and the supporting platform, and used to drive the supporting platform to rotate in the same direction as the rotating disk; The control mechanism is connected to the rotating disk and the rotating mechanism, and is used to control the rotating disk to rotate at a first preset speed during the thin film deposition process, and to control the rotating mechanism to drive the supporting platform to rotate at a second preset speed.

2. The device according to claim 1, characterized in that Also includes: Extraction unit; The exhaust unit is used to perform vacuum treatment on the reaction chamber through two exhaust pipes; the pipe openings of the two exhaust pipes are respectively arranged on both sides of the diameter direction of the rotating disk.

3. The device according to claim 2, characterized in that Also includes: An alignment mechanism, connected to the control mechanism, for automatically calibrating the object to be deposited to an initial angle before thin film deposition; The control mechanism is further used to control the alignment mechanism to drive the object to be deposited to rotate by a preset angle after the object to be deposited is automatically calibrated to the initial angle.

4. A thin film deposition method, characterized in that: The thin film deposition apparatus according to claim 3 is used to deposit a thin film on a workpiece to be deposited, the method comprising: Providing the object to be deposited; When the first preset speed is controlled by the control mechanism to be greater than 0, a first dielectric layer is deposited on the surface of the object to be deposited; wherein the thickness of the first dielectric layer close to the exhaust pipe side is less than the thickness of the first dielectric layer away from the exhaust pipe side; Automatically calibrating the to-be-deposited object formed with the first dielectric layer to the initial angle by the alignment mechanism; The control mechanism controls the alignment mechanism to drive the object to be deposited to rotate by the preset angle; When the first preset speed is controlled to be greater than 0 by the control mechanism, a second dielectric layer is deposited on the surface of the first dielectric layer after rotating the preset angle, so that the difference between the total thickness of the first dielectric layer and the second dielectric layer close to the exhaust pipe side and the total thickness of the first dielectric layer and the second dielectric layer away from the exhaust pipe side is within a preset range.

5. The method according to claim 4, characterized in that The film includes a dielectric layer constituting a capacitor; The object to be deposited includes at least a first electrode layer; the first dielectric layer is formed on a surface of the first electrode layer; and the method further includes: When the first preset speed is controlled by the control mechanism to be greater than 0, a third dielectric layer is formed on the surface of the second dielectric layer; Wherein, the thickness of the third dielectric layer is less than the thickness of the first dielectric layer; The first dielectric layer, the second dielectric layer, and the third dielectric layer constitute the dielectric layer.

6. The method according to claim 5, characterized in that The thickness of the second dielectric layer is 1.1-1.2 times the thickness of the first dielectric layer; the thickness of the first dielectric layer is less than 10 nm.

7. The method according to claim 6, characterized in that The first dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer located on a surface of the first sub-dielectric layer; The thickness of the first sub-dielectric layer close to the exhaust pipe is smaller than the thickness of the first sub-dielectric layer away from the exhaust pipe, and the thickness of the second sub-dielectric layer close to the exhaust pipe is smaller than the thickness of the second sub-dielectric layer away from the exhaust pipe; The thickness of the second sub-dielectric layer is greater than the thickness of the first sub-dielectric layer.

8. The method according to any one of claims 4 to 7, characterized in that: When depositing a thin film, the method further includes: controlling the second preset speed to be greater than 0 by the control mechanism.

9. The method according to claim 8, characterized in that The first preset speed is controlled to be 1-5 rpm, the sum of the first preset speed and the second preset speed is 6-12 rpm, and the pressure of the reaction chamber is 1.5-2.5 Torr.

10. A thin film deposition method, characterized in that: The thin film deposition device according to any one of claims 1 to 3 is used to deposit a thin film on a workpiece to be deposited, the method comprising: Providing the object to be deposited; When the second preset speed and the first preset speed are both controlled by the control mechanism to be greater than 0, a preset thin film is deposited on the surface of the object to be deposited.

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