Curved surface ultrathin metal co-doping coating method based on common velocity deposition model

Abstract

The invention relates to the technical field of vacuum sputter coating, and discloses a curved surface ultrathin metal co-doping coating method based on a co-velocity deposition model.The method comprises the steps that firstly, the sputtering power of two target materials is determined according to the pre-generated film thickness, multi-sputtering-angle and multi-point silicon wafer pasting deposition is conducted on a workpiece, the deposition rate is measured, and the target materials are obtained; averaging the rates on the same horizontal radius band to obtain point rate distribution on the workpiece under the set sputtering angle; performing polynomial fitting on the point rate distribution to obtain a rate distribution curve under a set sputtering angle, and repeating the process for multiple times by changing the sputtering angle to obtain a rate distribution curve under multiple zenith angles; and finally, finding a group of weight factors enabling the rate variance to be minimum by taking the smooth horizontal linear uniform rate as a combination target, and distributing deposition time under different sputtering angles according to the combined uniform rate and the weight factors. According to the invention, efficient single sputtering or co-doping uniform coating on a large-area complex curved surface can be realized.

Description

Technical Field

[0001] The present application relates to the technical field of vacuum sputtering coating, and in particular to a method for curved surface ultra-thin metal co-doping coating based on a co-velocity deposition model. Background Art

[0002] Thin film coatings are widely used in aerospace, automobiles, machine tools, chemical machinery, shipbuilding, power equipment, hardware tools, medical equipment, standard parts manufacturing and other fields. In particular, with the development of 5G communication technology and new light, thin and flexible electronic devices, the frequency components of electromagnetic wave signals in space are becoming more and more complex, and there is an urgent need to develop wide-band electromagnetic shielding, that is, optically transparent conductive / electromagnetic shielding thin film coatings for visual observation. At the same time, with the change of application environment, planar electromagnetic films based on planar coating technology are increasingly unable to adapt to the complex and changeable device surface shapes. Therefore, there is an urgent need to develop curved transparent conductive / electromagnetic shielding technology. However, the existing vacuum coating technology and equipment are very difficult to process fine structures on curved surfaces, and there are problems such as low efficiency and high cost, and it is impossible to achieve large-area and high-performance curved transparent conductive / electromagnetic shielding structures. Therefore, there is an urgent need for a universal method for preparing uniform thin films on curved surfaces.

[0003] Qiu Yang and others from the China Building Materials Science Research Institute reported a method to improve the uniformity of the thickness distribution of ITO thin films on spherical substrate surfaces, and used a modified planetary tooling to verify the proposed method. The optimized tooling configuration and process parameters were used to achieve the evaporation of ITO conductive films on the surface of large-sized hemispherical glass substrates. The thickness of the ITO thin films on the hemispherical substrate surface showed a trend of gradually becoming thinner from the top center to the edge of the ball, and the change trend was similar to a linear change, and the uniformity of the film thickness distribution was greatly improved.

[0004] K. Pfeiffer et al. from the University of Jena in Germany reported a method for preparing tantalum pentoxide, aluminum oxide and silicon dioxide optical films on curved surfaces using atomic layer deposition technology. The results showed that the optical layer can be deposited on vertical and horizontal substrate surfaces with uniform thickness and the same optical properties. It has been successfully applied to curved aspheric glass lenses with a diameter of 50 mm and a center thickness of 25 mm.

[0005] The technical solution with patent application number 202210604681.7 discloses a magnetic field-assisted robot-coordinated multi-nozzle electrospray curved surface coating device, describing a curved surface coating device composed of a robotic arm, an energized solenoid, an ink cartridge and a nozzle, which can achieve uniform and efficient coating of nano-sized droplets on large-area complex curved surfaces.

[0006] The technical solution with patent application number 201920742030.8 discloses a coating device for large-area curved glass, and describes a device that utilizes a new type of programmable motion system to control the vertical lifting and horizontal movement of a lifting platform and the motion trajectory of an ion discharge source, thereby realizing a curved coating device for large-area curved glass.

[0007] Although the above achievements have achieved uniform coating on curved surfaces to a certain extent, the following problems still exist: Ⅰ. It is still difficult to achieve uniform deposition of transparent conductive films on curved surfaces using the above technologies. It is very difficult to uniformly deposit materials on curved surfaces and process fine structures. In particular, it is very difficult to uniformly deposit films on curved surface structures with large curvatures, and the available technologies are very limited.

[0008] Ⅱ. Although the atomic layer deposition technology commonly used in curved surface coating is expected to achieve pinhole-free, dense and conformal layer growth, the deposition rate of atomic layer deposition technology is slow, which is difficult to adapt to the needs of low-cost, mass production; more importantly, the precursors of atomic layer deposition technology are few and expensive, and it is difficult to deposit composite films with multiple materials, especially multi-layer films with uniform thickness. Therefore, there is an urgent need for a thin film deposition method with a faster deposition rate and more diverse deposition materials.

[0009] III. Most of the existing curved surface coating technologies and equipment can only be adapted to a single material. It is difficult to ensure the uniformity and performance of the film for the co-doped deposition of multiple materials. This limits the application of composite material co-doped metal films in curved surface transparent conductive / electromagnetic shielding technology. The development of curved surface coating equipment and technology suitable for co-doped films can greatly reduce the cost of curved surface transparent conductive / electromagnetic shielding devices and further improve their performance. Therefore, it has important research value.

[0010] In summary, the existing curved surface coating technology is difficult to achieve large-area uniform coating on complex curved surfaces, and does not have the ability to co-dope coating on curved surfaces. At the same time, issues such as deposition rate and cost have always hindered the further application of existing curved surface coating technology. Summary of the invention

[0011] The purpose of the present application is to provide a method for ultra-thin metal co-doping coating on a curved surface based on a common rate deposition model, so as to achieve uniform ultra-thin metal co-doping coating with a thickness of nanometer size on the curved surface.

[0012] In order to achieve the above purpose, the technical solutions adopted are as follows: A method for ultra-thin metal co-doping coating on a curved surface based on a common rate deposition model, the method comprising: Step 1: Determine the sputtering power of the two targets according to the pre-generated film thickness; Step 2: Deposit silicon wafers at multiple sputtering angles and multiple points on the rotating surface of the workpiece, measure the deposition rate, and average the rates on the same horizontal radius band to obtain the point rate distribution on the workpiece at the set sputtering angle; Step 3: Perform polynomial fitting on the point rate distribution to obtain the rate distribution curve under the set sputtering angle; Step 4: Change the sputtering angle and repeat steps 2 and 3 multiple times to obtain the rate distribution curves under multiple zenith angles; Step 5: Taking the uniform rate of the smooth horizontal straight line as the combination target, the weight factors are calculated using the range optimization method to find a set of weight factors that minimize the rate variance; Step 6: According to the combined uniform rate and weight factor, the deposition time at different sputtering angles is allocated, and finally a uniform co-doped ultra-thin metal film is deposited.

[0013] Furthermore, the revolution curved surface is a hemispherical, parabolic or conical revolution curved surface, the aspect ratio of the height of the revolution curved surface to the bottom diameter is in the range of 0.5-2, and the bottom diameter of the revolution curved surface is in the range of 30 mm-1500 mm.

[0014] Furthermore, the uniformly co-doped ultra-thin metal film includes a basic element and a doping element; wherein the atomic concentration of the basic element accounts for greater than or equal to 80%, and the total atomic concentration of the doping element accounts for less than or equal to 20%; the thickness of the uniformly co-doped ultra-thin metal film is less than or equal to 35 nm and greater than or equal to 5 nm; in step 1, two target materials are determined according to the basic element and the doping element.

[0015] Furthermore, the basic element is silver or copper, and the doping element is one of aluminum, titanium, nickel, chromium, germanium, nitrogen and oxygen, and a combination thereof.

[0016] Furthermore, in step 1, the sputtering power is controlled to a size that can just cause the target material to sputter out ions.

[0017] Further, in step 4, at 0-90 0 At least three sputtering angles are selected at equal intervals within the sputtering angle range as the set sputtering angles and steps 2 and 3 are repeated to obtain the rate distribution curves under multiple zenith angles.

[0018] Furthermore, the step 3 comprises: By recording Rate Point Value Perform polynomial fitting; where, x i It represents the zenith angle of any point on the surface relative to the vertex of the surface. y irepresents the sedimentation rate value at any zenith angle, i Represents the counter index, m Represents the total number of recorded sedimentation rate values; when performing polynomial fitting, follow Polynomial of order: ; In the formula, represents the standard sedimentation rate fitted at any zenith angle, , , and represents the power terms of any zenith angle, , , , and All represent coefficients of polynomials; The residual sum of squares between the fitted polynomial value and the measured data value follows the following formula: ; In the formula, It represents the residual sum of squares between the fitted value and the measured data value; The coefficients of the polynomial obey the following system of equations: ; In the formula, is the symbol of partial derivative.

[0019] Furthermore, the step 5 comprises: Based on the fitted rate curves at n different sputtering angles, by assigning different weight factors, the combined deposition rate satisfies the following formula: ; In the formula, is the combined deposition rate; w1, w2, w3 and w n Represent the weight factors at the first, second, third and nth sputtering angles, respectively, , , and Respectively represent the fitted rates at the first, second, third and nth sputtering angles; A range optimization method is used to obtain a combination of all weight factors at a set scanning interval, and a deposition rate after multiple combinations is determined; Calculation of deposition rate after multiple combinations Zenith Angle The deposition rate under The combined uniform rate is determined according to a set of weight factors when the rate variance of the combined deposition rate is the minimum value; wherein the calculation formula of the rate variance of the combined deposition rate is: ; In the formula, is the rate variance of the combined deposition rate, i is the counter index, is the deposition rate at any zenith angle, is the average deposition rate.

[0020] Furthermore, in step 6, the deposition time of the pre-generated film thickness at different sputtering angles satisfies the following formula: ; In the formula, t 1. t 2 and t n For the first, second and n Deposition time at sputtering angles, v is the combined uniform rate, h is the pre-generated film thickness.

[0021] The beneficial effects of this application are: 1. The co-rate deposition model of the present application assigns different weight factors to different deposition rates at multiple sputtering angles, finds a set of weight factors with the smallest composite rate variance through a range optimization method, and allocates deposition time at different sputtering angles accordingly. After multiple sputtering angle depositions, a uniform single-material thin film or co-doped thin film can be prepared on a large area of ​​a large-area curved surface structure, and can effectively reduce time and process costs.

[0022] 2. The coating method of the present application not only supports uniform sputtering film formation on large curvature surface structures under a single material, but also satisfies the co-doping surface film formation of multiple materials. This co-doping deposition mode can effectively solve the problems of discontinuity and non-conductivity of metal films caused by the island growth mode of general single metal ultra-thin films on non-metal substrates. By doping other materials during the deposition process, additional growth sites are provided, and the prepared metal-doped ultra-thin films have excellent surface roughness and optoelectronic properties, and are expected to be widely used in the field of transparent conductive / electromagnetic shielding.

[0023] 3. By precisely controlling the sputtering time, the present application can prepare curved ultra-thin doped films with a very small thickness or even a few nanometers. The difference in film thickness in different regions can even be less than 2 nm. It has excellent film thickness uniformity and can therefore achieve good transmittance and conductivity. This curved surface deposition method can be widely used in various complex curved surface thin film deposition fields and is expected to promote the development of transparent conductive / electromagnetic shielding devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A flow chart of a method for curved surface ultra-thin metal co-doping coating based on a common-rate deposition model according to an embodiment of the present application is shown.

[0025] Figure 2 A schematic diagram of the collection point rate data of a silicon wafer according to an embodiment of the present application is shown; in the figure, 1 is a complex curved surface, and 2 is a silicon wafer.

[0026] Figure 3 A schematic diagram of a multi-rate curve fitting uniform rate according to an embodiment of the present application is shown.

[0027] Figure 4 A schematic diagram of multiple depositions at multiple sputtering angles according to an embodiment of the present application is shown; in the figure, 3 is a sputtering head. DETAILED DESCRIPTION

[0028] The following describes the embodiments of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. The present application can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0029] The specific implementation of the present application is further described in detail below in conjunction with the drawings and examples.

[0030] The present application provides a method for ultra-thin metal co-doping coating on a curved surface based on a common deposition model, which is used to achieve uniform ultra-thin metal co-doping coating with a thickness of nanometer size on the curved surface. Figure 1 As shown, it is a flow chart of a curved surface ultra-thin metal co-doping coating method based on a common-rate deposition model. The curved surface ultra-thin metal co-doping coating method based on a common-rate deposition model includes the following steps 1 to 6.

[0031] Step 1: Determine the sputtering power of the two targets according to the pre-generated film thickness.

[0032] In this embodiment, the two target materials in step 1 are determined according to the specific component composition of the uniform co-doped ultra-thin metal film to be prepared.

[0033] In some embodiments, the uniformly co-doped ultra-thin metal film includes a base element and a doping element; wherein the atomic concentration of the base element is greater than or equal to 80%, and the total atomic concentration of the doping element is less than or equal to 20%; the thickness of the uniformly co-doped ultra-thin metal film is less than or equal to 35 nm and greater than or equal to 5 nm.

[0034] In some embodiments, the base element is silver or copper, and the doping element is one of aluminum, titanium, nickel, chromium, germanium, nitrogen and oxygen, and a combination thereof.

[0035] It should be noted that if the basic element is a metal single substance, the corresponding target material can be a structure composed of the metal single substance, such as a silver plate or a copper plate, etc., which is not specifically limited in this embodiment.

[0036] The doping element can be a combination of multiple elements, for example, a combination to form a metal oxide or metal nitride or alloy material, such as an oxide or nitride of metal aluminum, titanium, nickel, chromium and germanium, or an alloy material formed by at least two of aluminum, titanium, nickel, chromium and germanium. The target material corresponding to the doping element is prepared from a composition formed by the corresponding multiple elements.

[0037] Step 2: Deposit silicon wafers at multiple sputtering angles and multiple points on the rotating surface of the workpiece, measure the deposition rate, and average the rate on the same horizontal radius band to obtain the point rate distribution on the workpiece at the set sputtering angle.

[0038] In some embodiments, the curved surface of revolution is a hemispherical, parabolic or conical curved surface of revolution, the aspect ratio of the height to the bottom diameter is in the range of 0.5-2, and the bottom diameter is in the range of 30 mm-1500 mm.

[0039] Figure 2 A schematic diagram of collecting point rate data for silicon wafer pasting according to an embodiment of the present application is shown, by pasting a silicon wafer 2 at multiple points on a complex curved surface 1 to obtain deposition thicknesses in different areas, and by measuring the point rates corresponding to different silicon wafers, the discretized point rates can be fit into a deposition rate distribution curve along the curved surface generatrix, thereby obtaining the deposition thickness rate distribution of the curved surface sample at a specific sputtering angle.

[0040] Step 3: Perform polynomial fitting on the point rate distribution to obtain the rate distribution curve under the set sputtering angle.

[0041] In some embodiments, during the rate curve fitting process, for the recorded Rate Point Value ,in, xi It represents the zenith angle of any point on the surface relative to the vertex of the surface. y i represents the sedimentation rate value at any zenith angle, i Represents the counter index, m Represents the total number of recorded sedimentation rate values; when performing the polynomial fitting, follow Polynomial of order: ; In the formula, represents the standard sedimentation rate fitted at any zenith angle, , , and represents the power terms of any zenith angle, , , , and They all represent the coefficients of the polynomial.

[0042] The polynomial of order can characterize the rate distribution curve under a set deposition rate, in which the abscissa x Represents the zenith angle of any point on the surface relative to the vertex of the surface, the ordinate y Represents the deposition rate at this point. The residual sum of squares between the fitted polynomial value and the measured data value follows the following formula: ; In the formula, Represents the sum of squares of the residuals between the fitted values ​​and the observed data values.

[0043] The coefficients of the polynomial obey the following system of equations: ; In the formula, is the symbol of partial derivative.

[0044] Step 4: Change the sputtering angle and repeat steps 2 and 3 multiple times to obtain the rate distribution curves under multiple zenith angles.

[0045] Step 5: Taking the uniform rate of the smooth horizontal straight line as the combination target, the range optimization method is used to calculate the weight factors to find a set of weight factors that minimize the rate variance.

[0046] In some embodiments, the 0 The rate curves of three or more specific sputtering angles are selected at equal intervals within the sputtering angle range to combine to obtain a smooth horizontal straight line uniform rate.

[0047] In some embodiments, during the process of combining the rate curve weighting factors, for the fitted rate curves at the n different sputtering angles, , by assigning different weight factors , the combined deposition rate Satisfy the following formula: ; In the formula, is the combined deposition rate; w1, w2, w3 and w n Represent the weight factors at the first, second, third and nth sputtering angles, respectively, , , and Represent the fitted rates at the first, second, third and nth sputtering angles respectively.

[0048] Under ideal conditions of absolutely uniform film formation, the polynomial should be a constant, and The closer the value distribution is to this feature, the more uniform the film formation is.

[0049] Preferably, in the process of optimizing the weight factor, in order to obtain a stable combined deposition rate , the following process should be followed: First, a range optimization method is used to obtain all weight factors at a specific scanning interval. (value range is 0-1) combination, and then the combined rate calculate Zenith Angle The deposition rate at (0-90°) is then determined based on a set of weight factors when the combined rate variance is the minimum value to determine the uniform deposition rate during deposition. , where the rate variance is expressed as: ; In the formula, is the rate variance of the combined deposition rate, i is the counter index, is the deposition rate at any zenith angle, is the average deposition rate.

[0050] in for The average of the combined deposition rates, while the uniform deposition rate is the rate variance at its minimum value .

[0051] Figure 3FIG. 4 shows a schematic diagram of a multi-rate curve fitting uniform rate according to an embodiment of the present application. Figure 3 As shown in the figure, by using the range optimization method for the rate distribution curves at different sputtering angles obtained based on the above point rate collection, a set of weight factors can be obtained, so that the deposition rate of the new rate curve obtained by assigning and adding the corresponding weight factors has a minimum variance in different regions along the surface generatrix. At this time, a deposition scheme with optimal film thickness uniformity is obtained. This set of weight factors is called the standard factor, and the average rate of the corresponding composite rate curve is the standard deposition rate. Figure 3 , the horizontal axis represents the zenith angle in degrees, and the vertical axis represents the deposition rate in nm / s. The figure illustrates a rate curve at a target position of 0 degrees, a rate curve at a target position of 60 degrees, a rate curve at a target position of 75 degrees, and a weighted average rate curve.

[0052] Step 6: According to the combined uniform rate and weight factor, the deposition time at different sputtering angles is allocated, and finally a uniform co-doped ultra-thin metal film is deposited.

[0053] In some embodiments, during the deposition process of obtaining a uniform co-doped ultra-thin metal film, the pre-generated film thickness is The deposition time at different sputtering angles satisfies the following formula: ; In the formula, t 1. t 2 and t n For the first, second and n Deposition time at sputtering angles, v is the combined uniform rate, h is the pre-generated film thickness.

[0054] Figure 4 A schematic diagram of multiple depositions at multiple sputtering angles according to an embodiment of the present application is shown. Based on the standard factor (i.e., the optimal set of weight factors selected) and the standard deposition rate (the combined uniform rate) obtained from steps 1 to 6 above, the standard sputtering time at the required film thickness can be calculated according to the standard deposition rate. The sputtering time required at different sputtering angles can then be obtained by multiplying the standard factor. After that, by controlling the sputtering head to perform sputtering at multiple sputtering angles for 3 minutes and multiple times according to the allocated time, a single-material film or co-doped film with better film thickness uniformity on the curved surface can be obtained.

[0055] The above implementation modes are only used to illustrate the present application, and are not intended to limit the present application. Ordinary technicians in the relevant technical field may make various changes and modifications without departing from the spirit and scope of the present application. Therefore, all equivalent technical solutions also belong to the scope of the present application, and the scope of patent protection of the present application shall be limited by the claims.

Claims

1. A method for ultra-thin metal co-doping coating on curved surface based on a common deposition model, characterized in that: The method comprises: Step 1: Determine the sputtering power of the two targets according to the pre-generated film thickness; Step 2: Deposit silicon wafers at multiple sputtering angles and multiple points on the rotating surface of the workpiece, measure the deposition rate, and average the rates on the same horizontal radius band to obtain the point rate distribution on the workpiece at the set sputtering angle; Step 3: Perform polynomial fitting on the point rate distribution to obtain the rate distribution curve under the set sputtering angle; Step 4: Change the sputtering angle and repeat steps 2 and 3 multiple times to obtain the rate distribution curves under multiple zenith angles; Step 5: Taking the uniform rate of the smooth horizontal straight line as the combination target, the weight factors are calculated using the range optimization method to find a set of weight factors that minimize the rate variance; Step 6: According to the combined uniform rate and weight factor, the deposition time at different sputtering angles is allocated, and finally a uniform co-doped ultra-thin metal film is deposited.

2. The method for curved surface ultra-thin metal co-doping coating based on a common rate deposition model as claimed in claim 1, characterized in that: The revolution curved surface is a hemispherical, parabolic or conical revolution curved surface, the aspect ratio of the height of the revolution curved surface to the bottom diameter is in the range of 0.5-2, and the bottom diameter of the revolution curved surface is in the range of 30 mm-1500 mm.

3. The method for curved surface ultra-thin metal co-doping coating based on a common rate deposition model as claimed in claim 1, characterized in that: The uniform co-doped ultra-thin metal film includes a basic element and a doping element; wherein the atomic concentration of the basic element accounts for greater than or equal to 80%, and the total atomic concentration of the doping element accounts for less than or equal to 20%; the thickness of the uniform co-doped ultra-thin metal film is less than or equal to 35 nm and greater than or equal to 5 nm; in step 1, two target materials are determined according to the basic element and the doping element.

4. The method for curved surface ultra-thin metal co-doping coating based on a common rate deposition model as claimed in claim 3, characterized in that: The basic element is silver or copper, and the doping element is one of aluminum, titanium, nickel, chromium, germanium, nitrogen and oxygen, or a combination thereof.

5. The method for curved surface ultra-thin metal co-doping coating based on a common rate deposition model as claimed in claim 1, characterized in that: In step 1, the sputtering power is controlled to a size that can just cause the target material to sputter out ions.

6. The method for curved surface ultra-thin metal co-doping coating based on a common rate deposition model as claimed in claim 1, characterized in that: In step 4, at 0-90 0 At least three sputtering angles are selected at equal intervals within the sputtering angle range as the set sputtering angles and steps 2 and 3 are repeated to obtain the rate distribution curves under multiple zenith angles.

7. The method for curved surface ultra-thin metal co-doping coating based on a common rate deposition model as claimed in claim 1, characterized in that: The step 3 comprises: By recording Rate Point Value Perform polynomial fitting; where, x i It represents the zenith angle of any point on the surface relative to the vertex of the surface. y i represents the sedimentation rate value at any zenith angle, i Represents the counter index, m Represents the total number of recorded sedimentation rate values; when performing polynomial fitting, follow Polynomial of order: ； In the formula, represents the standard sedimentation rate fitted at any zenith angle, , , and represents the power terms of any zenith angle, , , , and All represent coefficients of polynomials; The residual sum of squares between the fitted polynomial value and the measured data value follows the following formula: ； In the formula, It represents the residual sum of squares between the fitted value and the measured data value; The coefficients of the polynomial obey the following system of equations: ； In the formula, is the symbol of partial derivative.

8. The method for curved surface ultra-thin metal co-doping coating based on a common rate deposition model as claimed in claim 1, characterized in that: The step 5 comprises: Based on the fitted rate curves at n different sputtering angles, by assigning different weight factors, the combined deposition rate satisfies the following formula: ； In the formula, is the combined deposition rate; w1, w2, w3 and w n Represent the weight factors at the first, second, third and nth sputtering angles, respectively, , , and Respectively represent the fitted rates at the first, second, third and nth sputtering angles; A range optimization method is used to obtain a combination of all weight factors at a set scanning interval, and a deposition rate after multiple combinations is determined; Calculation of deposition rate after multiple combinations Zenith Angle The deposition rate under The combined uniform rate is determined according to a set of weight factors when the rate variance of the combined deposition rate is the minimum value; wherein the calculation formula of the rate variance of the combined deposition rate is: ； In the formula, is the rate variance of the combined deposition rate, i is the counter index, is the deposition rate at any zenith angle, is the average deposition rate.

9. The method for curved surface ultra-thin metal co-doping coating based on a common rate deposition model as claimed in claim 8, characterized in that: In step 6, the deposition time of the pre-generated film thickness at different sputtering angles satisfies the following formula: ； In the formula, t 1. t 2 and t n For the first, second and n Deposition time at sputtering angles, v is the combined uniform rate, h is the pre-generated film thickness.

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