Display panel and manufacturing method thereof

Abstract

The invention discloses a display panel and a manufacturing method thereof. The display panel comprises a substrate and pixel units. The pixel unit is arranged on the substrate, and the pixel unit comprises a power generation structure. The power generation structure comprises a first electrode, a second electrode and a transparent semiconductor layer. The first electrode includes a metal reflective layer. The second electrode is disposed on the first electrode, and the second electrode includes a transparent conductive layer. The transparent semiconductor layer is arranged between the first electrode and the second electrode, and the transparent semiconductor layer is electrically connected with the first electrode and the second electrode.

Description

Technical Field

[0001] The present invention relates to a display panel and a manufacturing method thereof, and in particular to a display panel with picture display function and power generation function and a manufacturing method thereof. Background Art

[0002] Display panels have been widely used in various electronic products such as notebooks, smart phones, wearable devices, smart watches and car displays to provide more convenient information transmission and display due to their thin and light appearance, low power consumption and no radiation pollution. Display panels that use external light (such as ambient light) as light sources (such as reflective display panels or semi-transmissive semi-reflective display panels) have the effect of protecting the user's eyes and have the advantages of low energy consumption and / or low heat generation. Therefore, the industry is committed to developing such display panels. Summary of the invention

[0003] The object of the present invention is to provide a display panel that displays images by reflecting external light and generates electricity by absorbing external light, so that the display panel can display images and generate electricity. In addition, the present invention also provides a manufacturing method for providing the display panel.

[0004] To solve the above technical problems, the present invention provides a display panel, which includes a substrate and a pixel unit. The pixel unit is arranged on the substrate, and the pixel unit includes a power generation structure. The power generation structure includes a first electrode, a second electrode and a transparent semiconductor layer. The first electrode includes a metal reflective layer. The second electrode is arranged on the first electrode, and the second electrode includes a transparent conductive layer. The transparent semiconductor layer is arranged between the first electrode and the second electrode, and the transparent semiconductor layer is electrically connected to the first electrode and the second electrode.

[0005] To solve the above technical problems, the present invention also provides a method for manufacturing a display panel, the display panel includes a pixel unit, the pixel unit includes a power generation structure, and the manufacturing method of the display panel includes: forming a first electrode of the power generation structure on a substrate, wherein the first electrode includes a metal reflective layer; forming a transparent semiconductor layer of the power generation structure on the first electrode; and forming a second electrode of the power generation structure on the transparent semiconductor layer, wherein the second electrode includes a transparent conductive layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 FIG. 1 is a schematic cross-sectional view of a display panel according to a first embodiment of the present invention.

[0007] Figure 2 FIG. 1 is a cross-sectional schematic diagram of a pixel unit of a display panel according to a first embodiment of the present invention.

[0008] Figure 3 FIG. 1 is a schematic cross-sectional view of a pixel unit of a display panel having a first conductive layer with a multi-layer structure according to a first embodiment of the present invention.

[0009] Figure 4 FIG. 1 is a schematic diagram showing the reflectivity of the first conductive layer of a display panel for light of various wavelengths according to an embodiment of the present invention.

[0010] Figure 5 FIG. 1 is a schematic diagram showing the absorptivity of a transparent semiconductor layer of a display panel for light of various wavelengths according to an embodiment of the present invention.

[0011] Figure 6 FIG. 1 is a schematic diagram showing the absorptivity of a transparent semiconductor layer of a display panel for light of various wavelengths according to another embodiment of the present invention.

[0012] Figure 7 The display panel of the first embodiment of the present invention is shown as follows: Figure 6 A schematic cross-sectional view of a transparent semiconductor layer is shown.

[0013] Figure 8 FIG. 1 is a schematic cross-sectional view of a display panel according to a variation of the first embodiment of the present invention.

[0014] Fig. 9 FIG. 1 is a cross-sectional schematic diagram of a pixel unit of a display panel according to a variation of the first embodiment of the present invention.

[0015] Fig.10 FIG. 1 is a cross-sectional schematic diagram of a display panel according to a second embodiment of the present invention.

[0016] Fig.11 FIG. 1 is a cross-sectional schematic diagram of a pixel unit of a display panel according to a second embodiment of the present invention.

[0017] Fig.12 FIG. 1 is a schematic top view of a conductive layer of a pixel unit of a display panel according to a second embodiment of the present invention.

[0018] Fig.13 FIG. 1 is a schematic cross-sectional view of a display panel according to a third embodiment of the present invention.

[0019] Fig.14 FIG. 1 is a schematic cross-sectional view of a pixel unit of a display panel according to a third embodiment of the present invention.

[0020] Fig.15 FIG. 1 is a schematic top view of a power generation structure of a plurality of pixel units of a display panel according to a third embodiment of the present invention.

[0021] Fig.16FIG. 4 is a cross-sectional schematic diagram of a pixel unit of a display panel according to a fourth embodiment of the present invention.

[0022] Fig.17 , Fig.18 , Fig.19 and Fig. 20 FIG. 1 is a schematic diagram showing the structure of a display panel in different stages according to a method for manufacturing the display panel according to an embodiment of the present invention.

[0023] Explanation of reference numerals: 100, 100', 200, 300, 400-display panel; 110-first substrate; 110S-surface; 120-circuit element layer; 130-power generation structure; 140-display medium layer; 150-second substrate; AS, AS'-array substrate structure; BL-light of backlight module; BM-shading layer; CF-color conversion layer; CN-channel layer; CT1, CT2, OCT, SCL1, SCL2-conductive layer; DE-drain; E1-first electrode; E2-second electrode; E3-third electrode; Eop-common electrode; GE-gate; IN1, IN2, IN 3. IN4-insulating layer; Li-near-infrared light; Lo-external light; Lr, Lr'-reflected light; Lv-visible light; OP-opening; OS-opposite substrate structure; PCL, TCL1, TCL2, TCL'-transparent conductive layer; RA-reflective area; RL-metal reflective layer; SB-substrate; SE-source; SM-semiconductor layer; SP, SP'-pixel unit; SPa-display area; SPb-peripheral area; SW-switching element; TA-penetration area; TH, TH'-perforation; TSM-transparent semiconductor layer; TSMo-transparent semiconductor material layer; UR-user; X, Y, Z-direction. DETAILED DESCRIPTION

[0024] In order to enable those skilled in the art to further understand the present invention, the preferred embodiments of the present invention are listed below, and the components of the present invention and the effects to be achieved are described in detail with the accompanying drawings. It should be noted that the drawings are simplified schematic diagrams, and therefore, only the components and combination relationships related to the present invention are shown to provide a clearer description of the basic architecture or implementation method of the present invention, while the actual components and layout may be more complex. In addition, for the convenience of explanation, the components shown in the drawings of the present invention are not drawn in proportion to the actual number, shape, and size, and the detailed proportions can be adjusted according to the design requirements.

[0025] In the present specification and claims, the words "include", "contain", "have" and the like are open-ended words, and therefore should be interpreted as "including but not limited to..." Therefore, when the terms "include", "contain" and / or "have" are used in the description of the present invention, they specify the existence of corresponding features, regions, steps, operations and / or components, but do not exclude the existence of one or more corresponding features, regions, steps, operations and / or components.

[0026] In the specification and claims of the present invention, when "A1 component is formed by B1", it means that the formation of A1 component exists with the presence of B1 or uses B1, and the formation of A1 component does not exclude the existence or use of one or more other features, regions, steps, operations and / or components.

[0027] In the present specification and claims, the term "horizontal direction" refers to a direction parallel to a horizontal plane, the term "horizontal plane" refers to a surface parallel to directions X and Y in the drawings, and the term "vertical direction" refers to a direction parallel to direction Z in the drawings, and directions X, Y, and Z are perpendicular to each other (i.e., the horizontal direction is perpendicular to direction Z). In the specification and claims, the term "top view" refers to the viewing result along the vertical direction. In the specification and claims, the term "section" refers to the viewing result of a structure cut along the vertical direction and viewed from the horizontal direction.

[0028] In the present specification and claims, the term "overlap" refers to the overlap of two components in the direction Z, and unless otherwise specified, the term "overlap" includes partial overlap or full overlap, wherein the two components may be in direct contact with each other or there may be a spacer between the two components.

[0029] In the present specification and claims, the term "approximately" is generally interpreted as being within plus or minus 10% of a given value, or within plus or minus 5%, plus or minus 3%, plus or minus 2%, plus or minus 1% or plus or minus 0.5% of a given value.

[0030] The ordinal numbers used in the specification and claims of the present invention, such as "first", "second", etc., are used to modify the elements. They do not imply or represent any previous ordinal numbers of the element (or elements), nor do they represent the order of one element and another element, or the order of the manufacturing method. The use of these ordinal numbers is only used to make the element with a certain name clearly distinguishable from another element with the same name. The same words may not be used in the claims and the specification. Accordingly, the first component in the specification may be the second component in the claims.

[0031] It should be noted that the following embodiments may replace, reorganize, or mix features in different embodiments to complete other embodiments without departing from the spirit of the present invention. Features between embodiments may be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other.

[0032] In the present invention, the display device includes a display panel, and the display panel can use external light as a light source for displaying a picture. External light enters the display panel from the side of the display panel facing the user, and the display panel reflects the external light to display the corresponding picture, wherein the above-mentioned external light may be, for example, ambient light (such as sunlight), but is not limited thereto. In some embodiments, the display device may also include a front light module, and the above-mentioned external light may also include light provided by the front light module, wherein the front light module is arranged on the side of the display panel facing the user. For example, the display panel may be a reflective display panel, wherein the reflective display panel uses the above-mentioned external light as a light source for displaying a picture, but is not limited thereto. For example, the display panel may be a transflective display panel, and the display device may also include a backlight module, wherein the transflective display panel, in addition to using the above-mentioned external light as a light source for displaying a picture, may also use the light provided by the backlight module as another light source for displaying a picture, wherein the backlight module is arranged on the side of the display panel facing away from the user, but is not limited thereto. In addition, examples of the display panel may be a liquid crystal display panel (LCD Panel), an electrophoretic display panel (ELECtrophoretic Display Panel), an electrowetting display panel (ELECTROWETTING DISPLAY PANEL) or other suitable display panels, but are not limited thereto.

[0033] The display panel may be a color display panel or a monochrome display panel according to the requirements, and the display panel may include the required structure according to the color it displays. Accordingly, the display panel may include a plurality of pixels, and a pixel may include at least one pixel unit. In some embodiments, if the display panel is a color display panel, a pixel may include a plurality of pixel units (i.e., a plurality of pixel units constitute a pixel), and each pixel unit is a sub-pixel, for example, a plurality of pixel units include a green sub-pixel, a red sub-pixel, and a blue sub-pixel, but not limited thereto, and the number and color of the pixel units included in the pixel may be changed according to the requirements. In some embodiments, if the display panel is a monochrome display panel, a pixel may include a pixel unit (i.e., a pixel unit is a pixel), but not limited thereto. The number, arrangement, and shape of pixels and pixel units may be adjusted according to the requirements.

[0034] Please refer to Figure 1 and Figure 2 , Figure 1 FIG. 1 is a schematic cross-sectional view of a display panel according to a first embodiment of the present invention. Figure 2 FIG. 2 is a cross-sectional schematic diagram of a pixel unit of a display panel according to a first embodiment of the present invention. Figure 1 and Figure 2 As shown, the display panel 100 includes a first substrate 110 and a second substrate 150 disposed opposite to each other, wherein the first substrate 110 and the second substrate 150 can be respectively a hard substrate or a flexible substrate, and can include, for example, glass, plastic, quartz, sapphire, polymer (such as polyimide (PI), polyethylene terephthalate (PET)), other suitable materials or combinations thereof according to their types, but not limited thereto. It should be noted that the materials, shapes and sizes of the first substrate 110 and the second substrate 150 can be the same or different. In addition, in Figure 1 and Figure 2 In the embodiment, the normal direction of the first substrate 110 and the second substrate 150 is parallel to the direction Z. In the present embodiment, the pixel unit SP is disposed on the surface 110S of the first substrate 110 , and the direction Z is a direction perpendicular to the surface 110S of the first substrate 110 .

[0035] like Figure 1 and Figure 2As shown, the display panel 100 includes a display medium layer 140, which is disposed between the first substrate 110 and the second substrate 150. The display medium layer 140 may include a suitable material according to the type of the display panel 100. In the present embodiment, the display panel 100 may be a reflective liquid crystal display panel, so the display medium layer 140 may include, for example, liquid crystal molecules, but is not limited thereto. In other embodiments, the display medium layer may include an electrophoretic material or other suitable display medium material, but is not limited thereto. The display medium material included in the display medium layer 140 may be adjusted in any suitable manner to adjust the state of the portion of the display medium layer 140 corresponding to each pixel unit SP, thereby correspondingly adjusting the light transmittance in each pixel unit SP. For example, in some embodiments, the state of the display medium layer 140 may be controlled by an electric field (e.g., an electric field generated between a pixel electrode and a common electrode) and / or an electrical signal.

[0036] In the present invention, the electrodes used to control the state of the display medium layer 140 can be designed according to the requirements. For example, the multiple electrodes used to control the display medium layer 140 can be arranged on opposite sides of the display medium layer 140 (that is, part of the electrodes (such as pixel electrodes) are arranged between the display medium layer 140 and the first substrate 110, and part of the electrodes (such as common electrodes) are arranged between the display medium layer 140 and the second substrate 150, so that the display medium layer 140 is arranged between these electrodes (such as pixel electrodes and common electrodes)), but it is not limited to this. For example, the multiple electrodes used to control the display medium layer 140 can be arranged on the same side of the display medium layer 140 (such as pixel electrodes and common electrodes can be arranged between the display medium layer 140 and the first substrate 110), but it is not limited to this. In some embodiments, each pixel unit SP may include at least two electrodes for controlling the display medium layer 140, so that the state of the display medium material corresponding to the pixel unit SP in the display medium layer 140 can be adjusted according to the electrical signal (e.g., grayscale signal) received by the electrode, thereby adjusting the light transmittance of each pixel unit SP. In the following, the two electrodes (e.g., the pixel electrode and the common electrode) for controlling the state of the display medium layer 140 can be arranged on opposite sides of the display medium layer 140, but the present invention is not limited thereto.

[0037] like Figure 1 and Figure 2As shown, the circuit element layer 120 is disposed on the first substrate 110 and is located between the display medium layer 140 and the first substrate 110. The circuit element layer 120 may include at least one conductive layer, at least one insulating layer, at least one semiconductor layer, or a combination thereof, to form electronic components in the circuit element layer 120. Examples of materials for the conductive layer may include metals, transparent conductive materials (e.g., indium tin oxide (ITO), indium zinc oxide (IZO), etc.), other suitable conductive materials, or a combination thereof, and examples of materials for the insulating layer may include inorganic insulating materials (e.g., silicon oxide (SiO x ), Silicon Nitride (SiN y ), silicon oxynitride (SiO x N y )), organic insulating materials (such as photosensitive resins), other suitable insulating materials or combinations thereof, examples of materials for the semiconductor layer may include polysilicon, amorphous silicon, metal-oxide semiconductor semiconductors, other suitable semiconductor materials or combinations thereof, but are not limited thereto. For example, in Figure 2 In the embodiment, the conductive layer CT1, the insulating layer IN1, the semiconductor layer SM, the conductive layer CT2, the insulating layer IN2, and the insulating layer IN3 are sequentially disposed on the first substrate 110, wherein the conductive layer CT1 and the conductive layer CT2 may be metal conductive layers, and the insulating layer IN3 may be a flat layer, but is not limited thereto. In some embodiments, the display panel 100 may not include the insulating layer IN3.

[0038] The circuit element layer 120 may include any suitable electronic components and may be formed by the film layers in the circuit element layer 120 described above. Figure 2 In the circuit element layer 120, the switch element SW is disposed in the pixel unit SP, wherein the switch element SW can be a top gate thin film transistor, a bottom gate thin film transistor, a dual gate thin film transistor or other suitable switch elements ( Figure 2 The switch element SW in the embodiment is a bottom-gate thin film transistor. For example, the conductive layer CT1 may include the gate GE of the switch element SW, the insulating layer IN1 may include the gate insulating layer of the switch element SW, the semiconductor layer SM may include the channel layer CN of the switch element SW, and the conductive layer CT2 may include the source SE and the drain DE of the switch element SW, but the invention is not limited thereto. Figure 2 Although only one switch element SW is shown to be disposed in the pixel unit SP, the number of switch elements SW in the pixel unit SP can be designed according to requirements.

[0039] In some embodiments, the circuit element layer 120 may further include a scan line and a data line, wherein the scan line may be used to transmit a switch signal to control the on and off of the switch element SW, and the data line may be used to transmit an electrical signal (e.g., a grayscale signal) related to adjusting the state of the display medium layer 140. For example, the scan line may be electrically connected to the gate GE of the switch element SW, and the scan line and the gate GE may be formed by the same film layer (i.e., the conductive layer CT1 may include the scan line), and the data line may be electrically connected to the source SE of the switch element SW, and the data line and the source SE may be formed by the same film layer (i.e., the conductive layer CT2 may include the data line), but the present invention is not limited thereto.

[0040] In the present invention (such as Figure 1 and Figure 2 As shown in the figure, the display panel 100 includes a conductive layer SCL1 (or may be referred to as a first conductive layer), which is disposed between the first substrate 110 and the second substrate 150, wherein the conductive layer SCL1 serves as a light reflection layer of the display panel 100 and reflects the external light Lo, so that the display panel 100 can use the external light Lo as a light source for display, so that the user UR can see the display picture. In order to make the conductive layer SCL1 have a good reflection effect on the external light Lo, the conductive layer SCL1 may be a single-layer structure or a multi-layer structure including a metal reflection layer, wherein the metal reflection layer is used to reflect the external light Lo. In some embodiments, the material of the metal reflection layer may include a metal material with high reflectivity, such as silver, aluminum or other suitable metal materials. Specifically, the pixel unit SP has a display area SPa, and the display area SPa of the pixel unit SP is used to display the picture. The display area SPa has a reflection area RA, and the reflection area RA of the pixel unit SP reflects a part of the external light Lo to form a corresponding picture. The conductive layer SCL1 is disposed in the reflection area RA in the display area SPa, wherein the conductive layer SCL1 includes a metal reflection layer and is used to reflect the external light Lo to display the corresponding picture.

[0041] For example, see Figure 3 , Figure 3 FIG. 1 is a cross-sectional schematic diagram of a pixel unit of a display panel according to a first embodiment of the present invention, wherein the first conductive layer (conductive layer SCL1) is a multi-layer structure. Figure 3As shown, the conductive layer SCL1 may be a multi-layer structure, and include two transparent conductive layers TCL1, TCL2 (e.g., each of the transparent conductive layers TCL1, TCL2 may include indium tin oxide, indium zinc oxide or other suitable transparent conductive materials, and the materials of the transparent conductive layers TCL1, TCL2 may be the same as or different from each other) and a metal reflective layer RL disposed between the two transparent conductive layers TCL1, TCL2 in the direction Z (i.e., the two transparent conductive layers TCL1, TCL2 and the metal reflective layer RL are stacked on each other), but is not limited thereto. In other embodiments, the conductive layer SCL1 may be a multi-layer structure, and the conductive layer SCL1 may include one of the transparent conductive layers TCL1, TCL2 and the metal reflective layer RL. In still other embodiments, the conductive layer SCL1 may be a single-layer structure, and the conductive layer SCL1 may include the metal reflective layer RL.

[0042] Please refer to Figure 3 and Figure 4 , Figure 4 FIG. 1 is a schematic diagram showing the reflectivity of the first conductive layer of a display panel according to an embodiment of the present invention for light of different wavelengths, wherein the corresponding Figure 4 The conductive layer SCL1 of the embodiment includes Figure 3 The two transparent conductive layers TCL1 and TCL2 and the metal reflective layer RL disposed between the two transparent conductive layers TCL1 and TCL2 are shown. The materials of the two transparent conductive layers TCL1 and TCL2 are indium tin oxide. The thickness of the transparent conductive layer TCL2 close to the display medium layer 140 is about 50 angstroms. The thickness of the transparent conductive layer TCL1 away from the display medium layer 140 is about 80 angstroms, the material of the metal reflective layer RL is silver, and the thickness of the metal reflective layer RL is about 1500 angstroms. Figure 4 As shown, the conductive layer SCL1 has a high reflectivity for the external light Lo, wherein the reflectivity of the conductive layer SCL1 for the light with a wavelength of 380 nanometers (nm) to 780 nanometers can be greater than or equal to 75%, and the reflectivity for the light with a longer wavelength range (e.g., a wavelength of 550 nanometers to 780 nanometers) can be greater than or equal to 95%. Accordingly, the conductive layer SCL1 can generate a reflected light Lr with sufficient light intensity by reflecting the external light Lo, so that the display panel 100 can use the reflected light Lr to display the picture. In this embodiment, as Figure 1 and Figure 2 As shown, since the external light Lo and the reflected light Lr can penetrate the second substrate 150 , the second substrate 150 is a light-transmissive substrate.

[0043] In the present invention, the display panel 100 includes a power generation structure 130 disposed between the first substrate 110 and the second substrate 150, wherein the power generation structure 130 is used to absorb a portion of the external light Lo and convert it into photocurrent. Figure 1 and Figure 2 As shown, the power generation structure 130 of the pixel unit SP is located in the reflective area RA of the display area SPa, and the power generation structure 130 may include a first electrode E1, a transparent semiconductor layer TSM and a second electrode E2, wherein the transparent semiconductor layer TSM is disposed between the first electrode E1 and the second electrode E2 and electrically connects the first electrode E1 and the second electrode E2, and the second electrode E2 is disposed between the transparent semiconductor layer TSM and the display medium layer 140. In some embodiments, other film layers (such as a hole transport layer and / or an electron transport layer) may be disposed between the transparent semiconductor layer TSM and the first electrode E1 and / or between the transparent semiconductor layer TSM and the second electrode E2, but the present invention is not limited thereto. In the present invention, the transparent semiconductor layer TSM may be referred to as a photoactive layer. The transparent semiconductor layer TSM may absorb a portion of the external light Lo and convert it into a photocurrent, and the photocurrent may be stored in a battery (or capacitor) (not shown) in the display device through the first electrode E1 and the second electrode E2, so as to achieve the effect of charging the display device.

[0044] like Figure 1 and Figure 2 As shown, the conductive layer SCL1 disposed between the first substrate 110 and the second substrate 150 includes the first electrode E1 of the power generation structure 130. Figure 1 and Figure 2 As shown, the display panel 100 further includes a conductive layer SCL2 (or may be referred to as a second conductive layer) disposed between the first substrate 110 and the second substrate 150, and the conductive layer SCL2 includes the second electrode E2 of the power generation structure 130, wherein the conductive layer SCL2 includes a transparent conductive layer, and the transparent conductive layer includes a transparent conductive material (such as indium tin oxide, indium zinc oxide, etc.), so that the external light Lo and the reflected light Lr can penetrate the conductive layer SCL2. Since the transparent semiconductor layer TSM is disposed between the first electrode E1 and the second electrode E2, the transparent semiconductor layer TSM is disposed between the conductive layer SCL1 and the conductive layer SCL2.

[0045] In the present invention, the transparent semiconductor layer TSM may include any suitable material and may be a single-layer structure or a multi-layer structure, wherein the transparent semiconductor layer TSM may absorb external light Lo (e.g., visible light, infrared light, and / or ultraviolet light) of a specific range of wavelengths according to the material included, so as to convert a portion of the external light Lo into photocurrent to generate electricity. In some embodiments, the transparent semiconductor layer TSM may be a multi-layer structure, and the transparent semiconductor layer TSM has a PN junction so that the transparent semiconductor layer TSM can perform photoelectric conversion.

[0046] In some embodiments, the transparent semiconductor layer TSM may include PCBM (phenyl C61-butyric acidmethyl ester), P3HT (poly (3-hexylthiophene)), transition metal dichalcogenide (TMD), other suitable metal compounds or combinations thereof to absorb a portion of the visible light in the external light Lo and convert it into photocurrent. Under some material selections, the transparent semiconductor layer TSM can absorb not only part of the visible light, but also part of the infrared light and / or part of the ultraviolet light. Please refer to Figure 5 , Figure 5 A schematic diagram is shown showing the absorptivity of this type of transparent semiconductor layer for light of various wavelengths, wherein the transparent semiconductor layer TSM includes PCBM and P3HT. Figure 5 In the invention, the transparent semiconductor layer TSM including PCBM and P3HT has a high absorption rate for light with a wavelength of 400 nm to 650 nm. For example, if the visible light band is defined as a wavelength of 450 nm to 650 nm, and the near-infrared (NIR) band is defined as a wavelength of 650 nm to 1400 nm, then Figure 5 The transparent semiconductor layer TSM including PCBM and P3HT has a high absorptivity for light in the visible light band, and has an absorption peak in the visible light band (the absorption peak is located at a wavelength of about 520 nanometers), and has a low absorptivity in the near infrared light band. In this article, this type of transparent semiconductor layer TSM can be referred to as a visible light absorption type transparent semiconductor layer.

[0047] according to Figure 4 and Figure 5 Since the transparent semiconductor layer TSM including PCBM and P3HT has a high absorptivity for light with a wavelength of 400 nm to 650 nm, and the reflectivity of the conductive layer SCL1 for light with a wavelength of 400 nm to 650 nm is greater than or equal to 80% (e.g., 80% to 95% or higher), Figure 1 and Figure 2As shown, when the external light Lo is incident on the transparent semiconductor layer TSM, the transparent semiconductor layer TSM will perform photoelectric conversion on part of the external light Lo to form a photocurrent (e.g., perform photoelectric conversion on part of the visible light in the external light Lo), because the conductive layer SCL1 includes a metal reflective layer (i.e., the first electrode E1 of the power generation structure 130 includes a metal reflective layer, such as Figure 3 The metal reflective layer RL of the power generation structure 130 is formed, so the remaining external light Lo that passes through the transparent semiconductor layer TSM will be reflected by the first electrode E1 of the power generation structure 130 to form reflected light Lr. Then, the reflected light Lr will be incident on the transparent semiconductor layer TSM, so that the transparent semiconductor layer TSM will perform photoelectric conversion on part of the reflected light Lr to form a photocurrent (e.g., perform photoelectric conversion on part of the visible light in the reflected light Lr), and the remaining reflected light Lr that passes through the transparent semiconductor layer TSM will pass through the second electrode E2 of the power generation structure 130 to be transmitted to the user UR, so that the user UR can see the display screen. Accordingly, the configuration of the conductive layer SCL1 can also improve the utilization rate of the external light Lo of the display panel 100 and increase the photocurrent generated by the power generation structure 130.

[0048] The present invention also provides another type of transparent semiconductor layer TSM to perform photoelectric conversion on light of different wavelength bands. In some embodiments, the transparent semiconductor layer TSM may include, for example, carbon 60 (C60), silicon naphthalocyanine (SiNc), titanium oxide (e.g., titanium dioxide (TiO2)), nickel oxide (NiO) or a combination thereof to absorb a portion of the infrared light (e.g., near-infrared light) in the external light Lo, and then convert it into photocurrent. In some cases, in addition to absorbing part of the infrared light, the transparent semiconductor layer TSM may also absorb part of the visible light (e.g., a small amount of visible light). For example, the transparent semiconductor layer TSM may include two sublayers, one of which includes carbon 60, nickel oxide or a combination thereof, and the other sublayer includes silicon nitride, titanium oxide or a combination thereof, but is not limited thereto. Please refer to Figure 6 , Figure 6 A schematic diagram showing the absorptivity of this type of transparent semiconductor layer for light of various wavelengths. Figure 6 In the embodiment, the transparent semiconductor layer TSM has an absorption peak in a band greater than 650 nanometers (e.g., it has a high absorption rate for light with a wavelength greater than 650 nanometers and less than or equal to 850 nanometers), and, compared with the absorption rate of the transparent semiconductor layer TSM in a band greater than 650 nanometers, the absorption rate of the transparent semiconductor layer TSM in a band less than 650 nanometers is relatively much smaller. Therefore, this type of transparent semiconductor layer TSM can absorb a portion of the infrared light (e.g., near-infrared light) in the external light Lo and a small amount of visible light. Specifically, this type of transparent semiconductor layer TSM has a high absorption rate for light in the near-infrared light band, and has an absorption peak in the near-infrared light band (e.g., Figure 6The absorption peak of the transparent semiconductor layer TSM is located in the wavelength range of about 700 nanometers to 800 nanometers, but not limited thereto), and has a low absorption rate in the visible light band. In this article, this type of transparent semiconductor layer TSM can be referred to as a near-infrared light absorption type transparent semiconductor layer.

[0049] according to Figure 4 and Figure 6 Since this type of transparent semiconductor layer TSM has a high absorption rate for light in the near-infrared light band, and the reflectivity of the conductive layer SCL1 for light with a wavelength greater than 650 nanometers can be greater than 95%, when the external light Lo is incident on the transparent semiconductor layer TSM, the transparent semiconductor layer TSM will perform photoelectric conversion on part of the external light Lo to form a photocurrent (e.g., perform photoelectric conversion on part of the near-infrared light in the external light Lo), and the remaining external light Lo that has passed through the transparent semiconductor layer TSM will be reflected by the first electrode E1 of the power generation structure 130 to form a reflected light Lr. Then, the reflected light Lr will be incident on the transparent semiconductor layer TSM, so that the transparent semiconductor layer TSM will perform photoelectric conversion on part of the reflected light Lr to form a photocurrent (e.g., perform photoelectric conversion on part of the near-infrared light in the reflected light Lr), and the remaining reflected light Lr that has passed through the transparent semiconductor layer TSM will be transmitted to the user UR through the second electrode E2 of the power generation structure 130, so that the user UR can see the display screen.

[0050] Please refer to Figure 7 , Figure 7 A cross-sectional view of a display panel 100 having a transparent semiconductor layer TSM mainly absorbing near infrared light is shown. Figure 7 The thick line in the figure represents visible light Lv, and the thin line represents near-infrared light Li. Figure 7 As shown in FIG. 1 , since the transparent semiconductor layer TSM mainly performs photoelectric conversion on the near-infrared light Li, the near-infrared light Li is greatly absorbed, and the transparent semiconductor layer TSM only absorbs a small amount of visible light Lv, the attenuation of the visible light Lv in the transparent semiconductor layer TSM can be reduced, thereby increasing the light intensity of the visible light Lv in the reflected light Lr, and improving the contrast of the display screen, and also reducing the thermal effect of the near-infrared light Li of the external light Lo on the display panel 100. It should be noted that, as Figure 6 , Figure 7 As shown, since this type of transparent semiconductor layer TSM has a high absorption rate for light in the near-infrared light band and a low absorption rate in the visible light band, most of the near-infrared light Li in the external light Lo is absorbed by the transparent semiconductor layer TSM and photoelectrically converted, while most of the visible light Lv in the external light Lo is reflected by the conductive layer SCL1. Figure 7 Only the visible light Lv portion of the reflected light Lr is shown, and the near-infrared light Li portion of the reflected light Lr is omitted.

[0051] In addition, in the present invention (such as Figure 1 , Figure 2 As shown, since the conductive layer SCL1 with good light reflection effect includes the first electrode E1 of the power generation structure 130, and the power generation structure 130 in the pixel unit SP is located in the reflection area RA of the display area SPa of the pixel unit SP, that is, the first electrode E1 of the power generation structure 130 not only serves as the light reflection layer of the display panel 100 to reflect the external light Lo to display the corresponding picture, but also can be used as the electrode of the power generation structure 130. Therefore, the number of film layers required for the display panel 100 can be reduced, thereby reducing the cost of the display panel 100 including the power generation structure 130.

[0052] In the present invention, the power generation structure 130 may be disposed at any suitable position between the first substrate 110 and the second substrate 150. In some embodiments, Figure 1 and Figure 2 As shown, the power generation structure 130 can be disposed between the circuit element layer 120 including the switch element SW and the display medium layer 140 (i.e., the circuit element layer 120 is between the first substrate 110 and the power generation structure 130). Therefore, the circuit element layer 120, the conductive layer SCL1, the transparent semiconductor layer TSM and the conductive layer SCL2 can be disposed between the first substrate 110 and the display medium layer 140. The first electrode E1 of the power generation structure 130 is disposed between the circuit element layer 120 and the transparent semiconductor layer TSM. The second electrode E2 of the power generation structure 130 is disposed between the display medium layer 140 and the transparent semiconductor layer TSM, but is not limited thereto. The first electrode E1 of the power generation structure 130 includes a metal reflective layer (such as Figure 3 The first electrode E1 of the power generation structure 130, in addition to being the electrode of the power generation structure 130, can also reflect the external light Lo so that the transparent semiconductor layer TSM performs a second photoelectric conversion and reflects the external light Lo to transmit to the user UR so that the user UR can see the corresponding picture, and the second electrode E2 of the power generation structure 130 is a light-transmitting electrode and includes a transparent conductive layer, so the external light Lo can penetrate the second electrode E2 to reach the transparent semiconductor layer TSM, and the reflected light Lr can penetrate the second electrode E2 to transmit to the user UR. In addition, the transparent semiconductor layer TSM of the power generation structure 130 is a light-transmitting photoactive layer, so the external light Lo not absorbed by the transparent semiconductor layer TSM can be transmitted to the first electrode E1 and reflected by the first electrode E1 to form the reflected light Lr, and the reflected light Lr not absorbed by the transparent semiconductor layer TSM can be transmitted to the second electrode E2 and penetrate the second electrode E2 to transmit to the user UR.

[0053] like Figure 1 and Figure 2As shown, the array substrate structure AS of the display panel 100 includes a first substrate 110 , a circuit element layer 120 , a conductive layer SCL1 , a transparent semiconductor layer TSM and a conductive layer SCL2 .

[0054] In some embodiments, the switch element SW may be electrically connected to the first electrode E1 or the second electrode E2 of the power generation structure 130 ( Figure 1 and Figure 2 Take the first electrode E1 of the power generation structure 130 coupled to the switching element SW as an example), so that the first electrode E1 or the second electrode E2 serves as a pixel electrode to receive a grayscale signal, thereby adjusting the state of the display medium layer 140. Because the first electrode E1 or the second electrode E2 of the power generation structure 130 can serve as an electrode of the power generation structure 130 in addition to being a pixel electrode, in some embodiments, one of the first electrode E1 and the second electrode E2 of the power generation structure 130 can serve as a pixel electrode of the corresponding pixel unit SP to receive a grayscale signal during the picture display period of the display panel 100, and as an electrode of the power generation structure 130 of the corresponding pixel unit SP to generate a photocurrent during the charging period of the display panel 100, that is, the grayscale signal and the photocurrent are received in different time periods to reduce the mutual influence between the display function and the charging function. For example, in Figure 2 In the embodiment, the first electrode E1 of the power generation structure 130 can be electrically connected to the drain electrode DE of the switch element SW through the through hole TH of the insulating layer IN3 and the insulating layer IN2, so that the first electrode E1 serves as a pixel electrode to receive the grayscale signal, but the present invention is not limited thereto. For example (not shown), the second electrode E2 of the power generation structure 130 can be electrically connected to the drain electrode DE of the switch element SW, so that the second electrode E2 serves as a pixel electrode to receive the grayscale signal, but the present invention is not limited thereto.

[0055] In some embodiments (such as Figure 1 and Figure 2 As shown in FIG. 1 , since the first electrode E1 or the second electrode E2 of the power generation structure 130 can be electrically connected to the switch element SW and serve as a pixel electrode, the power generation structure 130 can be disposed in the pixel unit SP. Figure 1 and Figure 2 As shown), the power generation structure 130 may occupy most of the area of ​​the pixel unit SP (eg, the area ratio of the power generation structure 130 to the pixel unit SP may be greater than or equal to 0.5 and less than or equal to 1), but is not limited thereto.

[0056] like Figure 1As shown, the display panel 100 may include a conductive layer OCT, which is disposed on the second substrate 150, so that the conductive layer OCT is disposed between the display medium layer 140 and the second substrate 150, wherein the conductive layer OCT is transparent and includes a transparent conductive material (such as indium tin oxide, indium zinc oxide, etc.), so that the external light Lo and the reflected light Lr can penetrate the conductive layer OCT. In some embodiments, the conductive layer OCT may include a common electrode Eop, wherein the electric field generated by the common electrode Eop and the pixel electrode can be used to adjust the state of the display medium layer 140. For example, the common electrode Eop of the conductive layer OCT can receive a common signal, but is not limited to this. In addition, as Figure 1 As shown, the opposite substrate structure OS of the display panel 100 includes a second substrate 150 and a conductive layer OCT, and the display medium layer 140 exists between the array substrate structure AS and the opposite substrate structure OS.

[0057] like Figure 1 As shown, the external light Lo of this embodiment is incident on the display panel 100 from the side of the second substrate 150 opposite to the display medium layer 140. Therefore, the external light Lo will pass through the opposite substrate structure OS, the display medium layer 140, the conductive layer SCL2 and the transparent semiconductor layer TSM (the transparent semiconductor layer TSM performs photoelectric conversion) in sequence. Then, the reflected light Lr formed by the reflection of the conductive layer SCL1 will pass through the transparent semiconductor layer TSM (the transparent semiconductor layer TSM performs photoelectric conversion again), the conductive layer SCL2, the display medium layer 140 and the opposite substrate structure OS in sequence, and finally be emitted from the display panel 100 to display the picture.

[0058] In the present invention, the display panel 100 may also include other required film layers, elements and / or structures according to needs. In some embodiments, when the display panel 100 is a color display panel, the display panel 100 may also include a color conversion layer, which is arranged between the first substrate 110 and the second substrate 150 to convert or filter light (such as white light) into light of different colors, wherein the color conversion layer may include a color filter, a quantum dot (Quantum Dot, QD) material, a fluorescence material, a phosphorescence material, other suitable materials or any combination thereof, but not limited thereto. In some embodiments, the color conversion layer may be included in the opposing substrate structure OS. For example, the color conversion layer may be arranged between the second substrate 150 and the conductive layer OCT and between the second substrate 150 and the display medium layer 140 (that is, the conductive layer OCT is arranged between the color conversion layer and the display medium layer 140), but not limited thereto.

[0059] In some embodiments, the display panel 100 may further include a light shielding layer having light shielding properties, disposed between the first substrate 110 and the second substrate 150, wherein the light shielding layer may include, for example, black photoresist, black ink, black resin, black pigment, metal, other suitable materials or combinations thereof. In some embodiments, the light shielding layer may be included in the opposing substrate structure OS to shield lower layer elements (e.g., opaque elements or wiring) or areas with poor display effects to enhance the display effect of the display panel 100, but is not limited thereto. In other embodiments, the light shielding layer may be included in the array substrate structure AS. In addition, in some embodiments, the light shielding layer may have a plurality of openings to define a display area SPa of the pixel unit SP.

[0060] The display panel of the present invention is not limited to the above-mentioned embodiments. Other embodiments will be disclosed below. However, in order to simplify the description and highlight the differences between each embodiment and the above-mentioned embodiments, the present invention uses the same reference numerals to mark the same elements and will not repeat the repeated parts.

[0061] Please refer to Figure 8 and Fig. 9 , Figure 8 FIG. 2 is a cross-sectional schematic diagram of a display panel according to a variation of the first embodiment of the present invention. Fig. 9 FIG. 2 is a cross-sectional schematic diagram of a pixel unit of a display panel according to a variation of the first embodiment of the present invention. Figure 8 and Fig. 9As shown, the difference between this variant embodiment and the first embodiment is that the display area SPa of the pixel unit SP' of the display panel 100' of this variant embodiment also has a penetration area TA, and the pixel unit SP' also includes a transparent conductive layer TCL'. For example, the transparent conductive layer TCL' may include indium tin oxide, indium zinc oxide or other suitable transparent conductive materials. The array substrate structure AS' of the display panel 100' includes a first substrate 110, a circuit element layer 120, a conductive layer SCL1, a transparent semiconductor layer TSM, a conductive layer SCL2 and a transparent conductive layer TCL'. The transparent conductive layer TCL' can be electrically connected to the drain DE of the switching element SW through the through hole TH of the insulating layer IN3 and the insulating layer IN2, so that the transparent conductive layer TCL' serves as a pixel electrode to receive a grayscale signal to adjust the state of the display medium layer 140, but is not limited thereto. The transparent conductive layer TCL' is located in the reflective area RA and the penetration area TA of the display area SPa of the pixel unit SP'. In the reflective area RA, the first electrode E1 of the power generation structure 130 is arranged above the transparent conductive layer TCL' and is electrically connected to each other. Therefore, in addition to being an electrode of the power generation structure 130, the first electrode E1 can also be used as a pixel electrode to receive grayscale signals. In the penetrating area TA, the light BL of the backlight module can pass through the transparent conductive layer TCL' and be transmitted to the user UR, so that the user UR can see the corresponding display screen. The rest of this variant embodiment can refer to the description of the first embodiment and will not be repeated here. In this variant embodiment, the display panel 100' can be a semi-transmissive and semi-reflective liquid crystal display panel, but is not limited to this.

[0062] Please refer to Figures 10 to 12 , Fig.10 FIG. 2 is a cross-sectional schematic diagram of a display panel according to a second embodiment of the present invention. Fig.11 FIG. 2 is a cross-sectional schematic diagram of a pixel unit of a display panel according to a second embodiment of the present invention. Fig.12 FIG. 2 is a schematic top view of a conductive layer of a pixel unit of a display panel according to a second embodiment of the present invention. Figures 10 to 12As shown, the difference between this embodiment and the first embodiment is that the conductive layer SCL1 of the display panel 200 of this embodiment further includes a third electrode E3 (i.e., the conductive layer SCL1 includes the third electrode E3 and the first electrode E1 of the power generation structure 130), and the power generation structure 130 is located in the peripheral area SPb of the pixel unit SP, wherein the third electrode E3 is located in the reflective area RA of the display area SPa of the pixel unit SP, the third electrode E3 and the first electrode E1 of the power generation structure 130 are separated from each other and are not electrically connected (electrically insulated) to each other, and the switch element SW (e.g., the drain DE) is electrically connected to the third electrode E3 but not electrically connected (electrically insulated) to the first electrode E1. Therefore, the third electrode E3 is arranged in the pixel unit SP as a pixel electrode and receives a grayscale signal to adjust the state of the display medium layer 140, and the first electrode E1 is used to transmit the photocurrent generated by the power generation structure 130. The conductive layer SCL1 may be a single-layer structure or a multi-layer structure including a metal reflective layer, wherein the metal reflective layer is used to reflect the external light Lo. Therefore, the third electrode E3 and the first electrode E1 of the power generation structure 130 each include a metal reflective layer (such as Figure 3 The third electrode E3 not only serves as a pixel electrode to adjust the state of the display medium layer 140, but also can reflect external light Lo to form reflected light Lr, and the reflected light Lr can be transmitted to the user UR so that the user UR can see the corresponding picture. The first electrode E1 of the power generation structure 130 can reflect external light Lo to form reflected light Lr', so that the transparent semiconductor layer TSM can perform a second photoelectric conversion.

[0063] In this embodiment, in order to prevent the potential of the first electrode E1 and / or the second electrode E2 of the power generation structure 130 from affecting the state of the display medium layer 140 in the area corresponding to the power generation structure 130 and causing poor visual effects of the picture, the light shielding layer BM located in the opposite substrate structure OS can be arranged in the peripheral area SPb of the pixel unit SP, and the light shielding layer BM overlaps the power generation structure 130 in the direction Z (the normal direction of the first substrate 110), thereby improving the quality of the display picture. It should be noted that although the light shielding layer BM overlaps the power generation structure 130 in the direction Z, since part of the external light Lo will be incident on the display panel 200 obliquely, the power generation structure 130 will still receive the external light Lo and generate photocurrent.

[0064] According to the above, the third electrode E3 of the present embodiment is used as a reflective structure for reflecting the external light Lo so that the display panel 200 displays the picture. In some embodiments, the third electrode E3 may occupy most of the area of ​​the pixel unit SP (e.g., the area ratio of the third electrode E3 to the pixel unit SP may be greater than or equal to 0.5 and less than or equal to 1) to improve the reflective effect of the third electrode E3 and enhance the brightness of the display panel 200.

[0065] like Figures 10 to 12 As shown, in the conductive layer SCL1, the third electrode E3 and the first electrode E1 of the power generation structure 130 can be disposed in the same pixel unit SP, and the third electrode E3 and the first electrode E1 can be disposed according to requirements. Fig.12 In the embodiment, the first electrode E1 is disposed around the third electrode E3, so that the power generation structure 130 is disposed around the third electrode E3 (eg, the power generation structure 130 surrounds the third electrode E3), but the present invention is not limited thereto. Figures 10 to 12 As shown, the pixel unit SP may have a display area SPa and a peripheral area SPb located around the display area SPa, the third electrode E3 is disposed in the display area SPa, and the power generation structure 130 is disposed in the peripheral area SPb, wherein the display area SPa does not overlap the light shielding layer BM in the direction Z, and the peripheral area SPb overlaps the light shielding layer BM in the direction Z. For example, in a top view, the area of ​​the third electrode E3 may be larger than the area of ​​the power generation structure 130, so as to improve the reflection effect of the third electrode E3 and enhance the brightness of the display panel 200.

[0066] Please refer to Figures 13 to 15 , Fig.13 FIG. 2 is a cross-sectional schematic diagram of a display panel according to a third embodiment of the present invention. Fig.14 FIG. 2 is a cross-sectional schematic diagram of a pixel unit of a display panel according to a third embodiment of the present invention. Fig.15 FIG. 2 is a schematic top view of a power generation structure of a plurality of pixel units of a display panel according to a third embodiment of the present invention. Figures 13 to 15 As shown, the difference between this embodiment and the first embodiment is that the display panel 300 of this embodiment further includes a transparent conductive layer PCL and an insulating layer IN4, the insulating layer IN4 is arranged between the power generation structure 130 and the transparent conductive layer PCL, and the transparent conductive layer PCL is arranged between the insulating layer IN4 and the display medium layer 140 (that is, the transparent conductive layer PCL is arranged between the power generation structure 130 and the display medium layer 140), wherein the transparent conductive layer PCL includes a transparent conductive material (such as indium tin oxide, indium zinc oxide, etc.), and the insulating layer IN4 is a light-transmitting insulating material, so that the external light Lo and the reflected light Lr can penetrate the transparent conductive layer PCL and the insulating layer IN4. It should be noted that the transparent conductive layer PCL and the insulating layer IN4 belong to the array substrate structure AS.

[0067] exist Fig.13 and Fig.14In the embodiment, the transparent conductive layer PCL may include a third electrode E3, the third electrode E3 and the power generation structure 130 are separated from each other and are not electrically connected to each other (electrically insulated), and the switch element SW (e.g., the drain electrode DE) is electrically connected to the third electrode E3 but is not electrically connected to (electrically insulated from) the first electrode E1. Therefore, the third electrode E3 is disposed in the pixel unit SP as a pixel electrode and receives a grayscale signal to adjust the state of the display medium layer 140, while the first electrode E1 is used to transmit the photocurrent generated by the power generation structure 130.

[0068] like Fig.13 and Fig.14 As shown, the configuration of the third electrode E3 of the transparent conductive layer PCL and the power generation structure 130 can be designed according to the requirements. Fig.13 and Fig.14 In the embodiment, the third electrode E3 and the power generation structure 130 can be arranged in the same pixel unit SP, and the third electrode E3 and the power generation structure 130 can overlap in the direction Z, but not limited thereto. The insulating layer IN4, the insulating layer IN3 and the insulating layer IN2 have a through hole TH', and the through hole TH' penetrates the insulating layer IN4, the insulating layer IN3 and the insulating layer IN2. The third electrode E3 can be electrically connected to the drain DE of the switch element SW through the through hole TH'. The first electrode E1 of the power generation structure 130 includes a metal reflective layer (such as Figure 3 The first electrode E1 of the power generation structure 130, in addition to being the electrode of the power generation structure 130, can also reflect the external light Lo to allow the transparent semiconductor layer TSM to perform a second photoelectric conversion and reflect the external light Lo to transmit it to the user UR so that the user UR can see the corresponding picture. The second electrode E2 of the power generation structure 130 is a light-transmitting electrode and includes a transparent conductive layer. Therefore, the external light Lo can pass through the transparent conductive layer PCL, the insulating layer IN4 and the second electrode E2 to reach the transparent semiconductor layer TSM, and the reflected light Lr can pass through the second electrode E2, the insulating layer IN4, the transparent conductive layer PCL, the display medium layer 140 and the opposite substrate structure OS to transmit to the user UR.

[0069] like Fig.14 and Fig.15 As shown, the power generation structures 130 of the plurality of pixel units SP may be coupled to each other to increase the area of ​​the power generation structure 130. For example, the first electrodes E1 (i.e., the conductive layer SCL1) of the power generation structures 130 of the plurality of pixel units SP may be coupled to each other, the transparent semiconductor layers TSM of the plurality of pixel units SP may be coupled to each other, and / or the second electrodes E2 (i.e., the conductive layer SCL2) of the power generation structures 130 of the plurality of pixel units SP may be coupled to each other, but the present invention is not limited thereto. The power generation structure 130 may have an opening OP in the pixel unit SP, and the opening OP overlaps the through hole TH' in the direction Z.

[0070] like Fig.13 and Fig.14 As shown, since the third electrode E3 receiving the grayscale signal is not electrically connected to the power generation structure 130, and the third electrode E3 is arranged between the power generation structure 130 and the display medium layer 140 in the direction Z, the potentials of the first electrode E1 and the second electrode E2 of the power generation structure 130 will not affect the state of the display medium layer 140, so as to improve the quality of the display image of the display panel 300.

[0071] Please refer to Fig.16 , Fig.16 FIG. 4 is a cross-sectional schematic diagram of a pixel unit of a display panel according to a fourth embodiment of the present invention. Fig.16 As shown, the difference between this embodiment and the first embodiment lies in the location of the power generation structure 130 of the display panel 400 of this embodiment. Fig.16 As shown, the power generation structure 130 can be disposed between the second substrate 150 and the display medium layer 140, so that the conductive layer SCL1, the transparent semiconductor layer TSM and the conductive layer SCL2 can be disposed between the second substrate 150 and the display medium layer 140, wherein the first electrode E1 of the power generation structure 130 is disposed between the second substrate 150 and the transparent semiconductor layer TSM, and the second electrode E2 of the power generation structure 130 is disposed between the transparent semiconductor layer TSM and the display medium layer 140. Fig.16 In the embodiment, the power generation structure 130 (ie, the conductive layer SCL1, the transparent semiconductor layer TSM and the conductive layer SCL2) may be disposed between the conductive layer OCT and the second substrate 150. Accordingly, the opposite substrate structure OS may include the second substrate 150, the conductive layer SCL1, the transparent semiconductor layer TSM, the conductive layer SCL2 and the conductive layer OCT.

[0072] exist Fig.16 In the embodiment, the common electrode Eop in the conductive layer OCT may be separated from the power generation structure 130 and not electrically connected to each other (electrically insulated). Therefore, an insulating material may exist between the common electrode Eop and the power generation structure 130. For example, Fig.16 As shown, when the display panel 400 is a color display panel, the color conversion layer CF may be disposed between the common electrode Eop and the power generation structure 130 and between the power generation structure 130 and the display medium layer 140 (the color conversion layer CF is included in the opposite substrate structure OS) to convert the color of light and separate the common electrode Eop from the power generation structure 130. For example (not shown), when the display panel 400 is a monochrome display panel, an insulating layer may be disposed between the common electrode Eop and the power generation structure 130 (this insulating layer is included in the opposite substrate structure OS).

[0073] In addition, the display panel 400 further includes a transparent conductive layer PCL having a third electrode E3, which is disposed between the circuit element layer 120 and the display medium layer 140, wherein the transparent conductive layer PCL includes a transparent conductive material (e.g., indium tin oxide, indium zinc oxide, etc.) so that the external light Lo and the reflected light Lr can penetrate the transparent conductive layer PCL. In this embodiment, the switch element SW (e.g., the drain electrode DE) is electrically connected to the third electrode E3 of the transparent conductive layer PCL, so the third electrode E3 serves as a pixel electrode and receives a grayscale signal to adjust the state of the display medium layer 140. It should be noted that the array substrate structure AS may include a first substrate 110, a circuit element layer 120 and a transparent conductive layer PCL.

[0074] like Fig.16 As shown, in this embodiment, the external light Lo is incident on the display panel 400 from the side of the first substrate 110 opposite to the display medium layer 140. Therefore, the external light Lo will pass through the array substrate structure AS, the display medium layer 140, the conductive layer OCT, the color conversion layer CF, the conductive layer SCL2 and the transparent semiconductor layer TSM (the transparent semiconductor layer TSM performs photoelectric conversion on part of the external light Lo). Then, the reflected light Lr formed by the reflection of the conductive layer SCL1 passes through the transparent semiconductor layer TSM (the transparent semiconductor layer TSM performs photoelectric conversion on part of the reflected light Lr), the conductive layer SCL2, the color conversion layer CF, the conductive layer OCT, the display medium layer 140 and the array substrate structure AS in sequence, and finally exits the display panel 400 to display the picture. In this embodiment, as Fig.16 As shown, since the external light Lo and the reflected light Lr can penetrate the first substrate 110 , the first substrate 110 is a light-transmissive substrate.

[0075] It should be noted that the transparent semiconductor layer TSM of the power generation structure 130 of the display panel of the second embodiment, the third embodiment and the fourth embodiment can be the visible light absorption type transparent semiconductor layer or the near infrared light absorption type transparent semiconductor layer described above. The visible light absorption type transparent semiconductor layer and the near infrared light absorption type transparent semiconductor layer can refer to the relevant description of the first embodiment, and will not be repeated here.

[0076] Please refer to Figures 17 to 20 , Figures 17 to 20 FIG. 4 is a schematic diagram of the structure of a display panel 400 at different stages of a manufacturing method according to an embodiment of the present invention, wherein Figures 17 to 20 Only the formation of the power generation structure 130 is shown. It should be noted that the manufacturing method of the present invention is not limited to the following text and drawings. In some embodiments, any other suitable steps may be added before or after one of the existing steps of the manufacturing method, and / or some steps may be performed simultaneously or separately.

[0077] In the following manufacturing methods, the film layer and / or structure formation process may include, for example, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), coating process, other suitable processes or combinations thereof. The patterning process may include, for example, a photolithography process, a combination of a photolithography process and an etching process, any other suitable process or combinations thereof, wherein the etching process may be a wet etching process, a dry etching process, any other suitable etching process or combinations thereof.

[0078] like Fig.17 As shown, a conductive layer SCL1 is formed on a substrate SB, wherein the substrate SB may include the first substrate 110 or the second substrate 150 of the above-mentioned embodiment. For example, the substrate SB may include the first substrate 110 and the circuit element layer 120 disposed on the first substrate 110 (such as the first embodiment, the second embodiment or the third embodiment), or the substrate SB may include the second substrate 150 (such as the fourth embodiment), but is not limited thereto. In this step, a first conductive material layer is formed on the substrate SB by a forming process, and the first conductive material layer is patterned to complete the formation of the conductive layer SCL1 having the first electrode E1. For example, in the second embodiment, after the first conductive material layer is formed on the circuit element layer 120, the first conductive material layer is patterned to form the conductive layer SCL1, wherein the conductive layer SCL1 includes the first electrode E1 and the third electrode E3 (that is, the first conductive material layer is patterned to form the first electrode E1 and the third electrode E3).

[0079] like Fig.18 and Fig.19 As shown, a transparent semiconductor layer TSM is formed on the conductive layer SCL1. For example, in this step, a transparent semiconductor material layer TSMo is formed on the conductive layer SCL1 (eg, Fig.18 As shown), and the transparent semiconductor material layer TSMo is patterned to complete the formation of the transparent semiconductor layer TSM (as shown Fig.19 For example, the transparent semiconductor material layer TSMo may be formed by a coating process, but is not limited thereto.

[0080] like Fig. 20As shown, a conductive layer SCL2 is formed on the transparent semiconductor layer TSM. For example, in this step, a second conductive material layer is formed on the transparent semiconductor layer TSM by a forming process, and the second conductive material layer is patterned to complete the formation of the conductive layer SCL2 having the second electrode E2. Accordingly, a power generation structure 130 having the first electrode E1, the transparent semiconductor layer TSM and the second electrode E2 is formed according to the above process.

[0081] In summary, since the display panel of the present invention displays images by reflecting external light, and the display panel has a power generation structure and can absorb external light to generate electricity, the display panel can have both image display function and power generation function.

[0082] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A display panel, characterized in that: include: a substrate; as well as A plurality of pixel units are arranged on the substrate, each of the pixel units comprises a power generation structure, and the power generation structure comprises: a first electrode, wherein the first electrode comprises a metal reflective layer; a second electrode disposed on the first electrode, wherein the second electrode comprises a transparent conductive layer; and A transparent semiconductor layer is disposed between the first electrode and the second electrode, and the transparent semiconductor layer is electrically connected to the first electrode and the second electrode.

2. The display panel according to claim 1, wherein: Each of the pixel units has a display area, the display area has a reflective area, and each of the power generation structures is located in the reflective area of ​​the display area of ​​the corresponding pixel unit, wherein the reflective area of ​​each pixel unit reflects a portion of external light to form a corresponding picture, and the transparent semiconductor layer is used to convert another portion of the external light into a photocurrent.

3. The display panel according to claim 2, wherein: One of the first electrode and the second electrode of each of the power generation structures serves as a pixel electrode of the corresponding pixel unit during the image display period of the display panel.

4. The display panel according to claim 2, wherein: The multiple pixel units are arranged on a surface of the substrate, and each of the pixel units also includes a pixel electrode, an insulating layer and a display medium layer, wherein in each of the pixel units, the pixel electrode is located between the display medium layer and the power generation structure in a direction perpendicular to the surface of the substrate, the insulating layer is located between the power generation structure and the pixel electrode in the direction perpendicular to the surface of the substrate, and the pixel electrode and the power generation structure are electrically insulated from each other.

5. The display panel according to claim 1, wherein: Each of the pixel units has a display area and a peripheral area, the display area has a reflective area, and each of the power generation structures is located in the corresponding peripheral area.

6. The display panel according to claim 5, wherein: Each of the pixel units also includes a pixel electrode, and each of the pixel electrodes is located in the reflective area of ​​the display area of ​​the corresponding pixel unit, wherein in each of the pixel units, the first electrode and the pixel electrode belong to the same conductive layer, and the first electrode and the pixel electrode are electrically insulated from each other.

7. The display panel according to claim 1, wherein: The display panel also includes another substrate, and each of the pixel units also includes a circuit element layer, a pixel electrode and a display medium layer, the circuit element layer includes a thin film transistor, and the pixel electrode is electrically connected to the thin film transistor, wherein in each of the pixel units, the circuit element layer and the pixel electrode are arranged between the other substrate and the display medium layer, and the power generation structure is located between the substrate and the display medium layer.

8. The display panel according to claim 1, wherein: The display panel is a reflective display panel or a semi-transmissive and semi-reflective display panel.

9. The display panel according to claim 1, wherein: The transparent semiconductor layer has an absorption peak in the visible light band.

10. The display panel according to claim 1, wherein: The transparent semiconductor layer has an absorption peak in a wavelength band greater than 650 nanometers.

11. A method for manufacturing a display panel, characterized in that: The display panel includes a plurality of pixel units, each of the pixel units includes a power generation structure, and the manufacturing method of the display panel includes the following steps: Forming a first electrode of the power generation structure on a substrate, wherein the first electrode includes a metal reflective layer; A transparent semiconductor layer forming the power generation structure is on the first electrode; as well as A second electrode of the power generation structure is formed on the transparent semiconductor layer, wherein the second electrode includes a transparent conductive layer.

12. The method for manufacturing a display panel according to claim 11, wherein: It also includes forming a circuit element layer on the substrate, the circuit element layer includes a thin film transistor, and the step of forming the circuit element layer is performed before the step of forming the first electrode of the power generation structure, wherein after the first electrode of the power generation structure is formed, the first electrode is located on the circuit element layer.

13. The method for manufacturing a display panel according to claim 12, wherein: The invention also includes forming a pixel electrode on the circuit element layer, wherein the steps of forming the first electrode of the power generation structure and forming the pixel electrode include: forming a conductive material layer on the circuit element layer; and The conductive material layer is patterned to form the first electrode and the pixel electrode.

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