Substrate alignment method

Abstract

The invention provides a substrate alignment method. In an exposure device or the like, alignment is performed with high precision for a multi-pattern substrate having improved mounting density. In an exposure device (10), a set of alignment marks (L, L ', LL) can be formed on a substrate (W) in spaces (SS) provided in the vicinity of the four corners of individual substrate regions (CS) of gaps (dicing spaces, SM) of the individual substrate regions (CS), the set of alignment marks (L, L', LL) being composed of dot-like marks (M) arranged in a cross-shaped or L-shaped manner or dot-like marks (M) arranged so as to surround the individual substrate regions (CS).

Description

Technical Field

[0001] The present invention relates to alignment of an apparatus such as an exposure apparatus and a laser processing apparatus for performing pattern formation and processing on a substrate. Background Art

[0002] Exposure apparatuses utilize an exposure method for forming a plurality of patterns on a single substrate. For example, there is known a technique for producing IC package substrates such as FC-BGA substrates by cutting them out from a single printed wiring board according to multiple patterns.

[0003] The manufacturing process of such IC packaging substrates includes a build-up process in which the process of forming a circuit pattern is repeated multiple times and then the layers are built up. Therefore, each cut-out portion (hereinafter referred to as a single-piece substrate) requires precise positioning relative to the pattern of the underlying layer.

[0004] As an alignment method for a substrate having a plurality of single-piece substrates (exposure regions), for example, there is known a method in which an alignment mark of each exposure region is measured by a dedicated measuring device that reads the alignment mark independently of the exposure device (see Patent Document 1). Therefore, in the pre-exposure stage, the measuring device measures the alignment mark provided in each exposure region of the substrate having a plurality of exposure regions arranged therein.

[0005] As another alignment method, there is known a method in which a connection pad or the like formed in each exposure area is photographed as an alignment mark (representative mark) and the positional deviation amount of each exposure area is detected by template matching (see Patent Documents 2 and 3).

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 10-64804

[0007] Patent Document 2: Japanese Patent Application Publication No. 2013-58520

[0008] Patent Document 3: Japanese Patent Application Publication No. 2017-67992

[0009] When the number of patterns formed on one substrate increases due to an increase in the size of the substrate, it takes time to separately measure the alignment marks of each pattern area using a dedicated measuring device, which reduces the productivity of the substrate.

[0010] On the other hand, the miniaturization of the pattern formed in each exposure area affects not only the wiring but also the connection pads, etc. Moreover, as the mounting density of the substrate increases, the interval between adjacent exposure areas inevitably becomes narrower. Therefore, in the method of extracting the connection pads, etc. as alignment marks and performing template matching, it is easy to extract wrong alignment marks, making it difficult to perform alignment with high precision.

[0011] Such a problem occurs not only in an exposure device that performs alignment but also in a laser processing device and the like. Summary of the invention

[0012] Therefore, a multi-pattern substrate with an increased mounting density also requires high-precision alignment.

[0013] The alignment method as one embodiment of the present invention can be performed in an exposure device, a laser processing device, a dedicated measuring device, etc., and can be applied to a multi-pattern substrate having a plurality of rectangular pattern regions set therein. In the multi-pattern substrate, gaps are provided between the rectangular pattern regions.

[0014] In the alignment method of the present invention, for a multi-pattern substrate having a plurality of rectangular pattern regions, collective alignment marks are formed at least for spaces near the four corners of each rectangular pattern region. Here, "space" refers to the gap portion located near the four corners in the gap between the pattern regions.

[0015] In the alignment method of the present invention, a multi-pattern substrate is photographed, representative positions of collective alignment marks are measured based on image data obtained by the photographing, and pattern formation positions of each rectangular pattern area are determined based on the measured representative positions of the collective alignment marks.

[0016] Furthermore, the set alignment mark includes a plurality of dot marks intersecting in a cross shape along the boundary lines of the plurality of rectangular pattern regions or a plurality of dot marks arranged in an L shape.

[0017] As described above, the collective alignment mark can be formed at least in the space near the four corners of each rectangular pattern area, and there are various methods for forming it in other areas. For example, a plurality of dot marks crossing in a cross shape or a plurality of dot marks arranged in an L shape can be formed only near the four corners. In addition, the collective alignment mark can be formed in a manner that a plurality of dot marks surround each rectangular pattern area.

[0018] In the alignment method, the average value of the positions of the plurality of dot marks included in the image data can be measured as the representative position of the collective alignment mark. In this case, if there are dot marks that do not have a complementary symmetrical positional relationship in the image data, such dot marks can be excluded and the average value can be calculated.

[0019] On the other hand, in the alignment method, two straight lines that intersect each other along the arrangement of dot marks included in the image data may be defined, and the intersection of the two straight lines may be measured as the representative position of the collective alignment mark.

[0020] There are various methods for extracting the collective alignment mark. For example, dot marks arranged in a cross shape, an L shape, or a matrix shape can be extracted from the image data obtained by shooting. Such extraction of dot marks can prevent the erroneous extraction of dot marks that do not constitute the collective alignment mark.

[0021] There are various methods for determining the pattern forming position. For example, for each rectangular pattern area, the pattern forming position of each rectangular pattern area may be determined based on the positions of at least two set alignment marks located on the diagonal line among the set alignment marks at the four corners.

[0022] The method for manufacturing a substrate of the present invention comprises the following steps: forming a pattern on a multi-pattern substrate aligned by the above-mentioned alignment method; and cutting out individual substrates formed corresponding to each pattern area from the multi-pattern substrate.

[0023] In another embodiment of the alignment mark forming method of the present invention, with respect to a multi-pattern substrate having a plurality of rectangular pattern areas, a collective alignment mark formed at least in the space near the four corners of each rectangular pattern area is set, and the set collective alignment mark is formed on the multi-pattern substrate, wherein the collective alignment mark includes a plurality of dot marks arranged in a cross shape or in an L shape along the boundary lines of the plurality of rectangular pattern areas.

[0024] Furthermore, in an alignment method which is one embodiment of the present invention, a multi-pattern substrate having a collective alignment mark formed thereon by the above-mentioned alignment mark forming method is photographed, a representative position of the collective alignment mark is measured based on image data obtained by the photographing, and a pattern formation position of each rectangular pattern area is determined based on the measured representative position of the collective alignment mark.

[0025] As a procedure of one embodiment of the present invention, the following steps are performed in an exposure device or a laser processing device: with respect to a multi-pattern substrate having a plurality of rectangular pattern areas, a collective alignment mark formed at least in the space near the four corners of each rectangular pattern area is set; and the set collective alignment mark is formed on the multi-pattern substrate, wherein the collective alignment mark includes a plurality of dot marks arranged in a cross shape or in an L shape along the boundary lines of the plurality of rectangular pattern areas.

[0026] Furthermore, a program as one embodiment of the present invention enables the following steps to be performed in an exposure device or a measuring device capable of measuring alignment marks: a multi-pattern substrate forms a collective alignment mark by executing the above-mentioned program, a representative position of the collective alignment mark is measured based on image data obtained by photographing the multi-pattern substrate; and a pattern formation position of each rectangular pattern area is determined based on the measured representative position of the collective alignment mark.

[0027] According to the present invention, in an exposure apparatus or the like, even a multi-pattern substrate with an improved mounting density can be aligned with high precision. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a schematic block diagram of the exposure apparatus according to this embodiment.

[0029] Figure 2 : is a flowchart of the formation process of the set alignment mark.

[0030] Figure 3 FIG. 1 is a diagram showing an example of a substrate W on which collective alignment marks are formed.

[0031] Figure 4 1 is a flowchart showing an alignment processing step including position measurement of a set of alignment marks.

[0032] Figure 5 is a diagram showing an extraction area.

[0033] Figure 6 The following are diagrams showing two calculation methods for obtaining the representative position of the collective alignment mark.

[0034] Description of symbols

[0035] 10: exposure device; 20: control unit; 30: measurement unit; 40: image processing unit; 50: exposure unit; 60: imaging unit; W: substrate. DETAILED DESCRIPTION

[0036] Hereinafter, the exposure apparatus according to the present embodiment will be described with reference to the drawings.

[0037] Figure 1 This is a schematic block diagram of the exposure apparatus according to this embodiment.

[0038] Here, the exposure device 10 is configured as a maskless exposure device, and has an exposure unit 50, and the exposure unit 50 is provided with a light modulation element array (here, DMD (Digital Micro-mirror Device)). The control unit 20 of the exposure device 10 controls the operation of the exposure device 10, and the program related to the control of the exposure process, etc. is pre-stored in a memory not shown.

[0039] The scanning mechanism 80 provided on the gantry 70 can move the stage 90 on which the substrate W is mounted in the main scanning direction (X direction) and the sub scanning direction (Y direction). The stage 90 defines the main scanning direction (X direction) and the sub scanning direction (Y direction) as mutually perpendicular coordinate systems.

[0040] The exposure unit 50 has the above-mentioned light modulator array, illumination optical system, and projection optical system. Illumination light emitted from a light source unit (not shown) is irradiated to the workbench 90 via the illumination optical system, light modulator array, and projection optical system. In the DMD in which micro mirrors are arranged in a matrix, each micro mirror is selectively turned on / off controlled, and the light reflected by the micro mirror in the on state is projected onto the substrate W as pattern light.

[0041] The drawing data (vector data) sent from the control unit 20 is converted into raster data and then sent to the DMD. The position coordinates of the stage 90 are measured by a linear encoder or laser interferometer (not shown), and pattern light is projected according to the position of the stage 90, that is, the position of the substrate W.

[0042] As the scanning mechanism 80 moves the stage 90 in the main scanning direction (X direction) at a predetermined speed, each micromirror of the DMD is controlled to be turned on / off, thereby projecting pattern light according to the position of the substrate W.

[0043] As an exposure method, exposure can be performed while moving the workbench 90 continuously or intermittently, and overlapping exposure (multiple exposure) can also be performed. The exposure unit 50 is configured to be tilted at a slight angle relative to the main scanning direction (X direction), thereby being able to form a pattern with a resolution below the cell size.

[0044] Here, the substrate W is a multi-patterned substrate of an FC-BGA substrate, for example, a multi-layer substrate based on buildup in which circuit patterns of a 60mm×60mm single-piece substrate (FC-BGA substrate) are arranged in an 8×8 matrix on a 520mm×520mm rectangular substrate.

[0045] The exposure device 10 performs an exposure process to form a pattern on the substrate, and the pattern includes a circuit pattern for each single-piece substrate area and an insulating pattern formed in an insulating layer between layers. After the exposure process, the gap between the single-piece substrates (also called a cutting space) can be cut to obtain a semiconductor packaging substrate.

[0046] The exposure device 10 has an alignment function and includes a measuring unit 30, an image processing unit 40, and an imaging unit 60. The imaging unit 60 is composed of, for example, a CCD camera, and can be moved in a main scanning direction (X direction) and a sub-scanning direction (Y direction) by a driving mechanism (not shown).

[0047] The image processing unit 40 extracts alignment marks described below from the image data obtained by the imaging unit 60. The measuring unit 30 measures the positions of the extracted alignment marks. The control unit 20 determines the exposure positions of the individual substrate regions in the exposure process based on the measured positions of the alignment marks to perform alignment.

[0048] As described later, in this embodiment, the alignment mark for positioning the substrate W is formed in the gap (cut space) of the single-piece substrate region, and the alignment mark is composed of a plurality of dot marks as elements (hereinafter referred to as a collective alignment mark).

[0049] The exposure device 10 can form the collective alignment mark. Regarding the formation of the collective alignment mark, the substrate W can be exposed only to form the collective alignment mark, and the substrate W can also be exposed together with the process of exposing the lower layer pattern (base pattern) of the stack.

[0050] Figure 2 1 is a flowchart of the formation process of the collective alignment mark. After the substrate W is mounted on the workbench 90, the control unit 20 executes the process based on a program stored in a memory not shown. Alternatively, the formation process of the collective alignment mark may be performed after the alignment marks for GA (Global Alignment) pre-formed at the four corners of the substrate W are measured and aligned.

[0051] First, the specification of the collective alignment mark to be formed on the substrate W is determined (S101). The specification of the collective alignment mark includes the size and arrangement of the alignment mark. These specifications are determined based on the number and size of the single-piece substrate areas set for the substrate W, the distance interval between the single-piece substrate areas (cutting space width), etc.

[0052] Figure 3 1 is a diagram showing an example of a substrate W on which a collective alignment mark is formed. Figure 3 (A) Figure 3 (B) shows the set of alignment marks.

[0053] like Figure 3 As shown in FIG. 1 , on the substrate W, the single-chip substrate regions CS are arranged in a matrix at a predetermined pitch corresponding to the semiconductor package. Here, the single-chip substrate regions CS are set to match the grid defined by the XY coordinate system, and a lower layer pattern (base pattern) is formed. Figure 3 Only four individual substrate regions CS are shown in the figure, but in reality, a large number of several hundred individual substrate regions CS are arranged along the vertical and horizontal directions of the substrate W.

[0054] The interval (pitch) K of the gap SM provided as the cutting space between the single-chip substrate regions CS is set according to the size of the single-chip substrate region CS, the required mounting density of the substrate W, etc. For example, in the aforementioned example of the FC-BGA substrate, the interval K is approximately 2 mm to 3 mm.

[0055] exist Figure 3 In the case of (A), a collective alignment mark L is formed in a space SS near the four corners of each single-chip substrate region CS in the gap SM between the single-chip substrate regions CS. The collective alignment mark L is composed of a plurality of dot marks M arranged in a cross shape and is arranged along the boundary line BL of the single-chip substrate region CS.

[0056] Here, a total of 9 dot marks M along the X direction and the Y direction are arranged in a cross shape. However, the number of dot marks arranged in the X direction and the Y direction and their total count are not limited to this. As long as the dot marks M are arranged in a mutually symmetrical positional relationship relative to the cross position (center position), it will suffice. In other words, as long as the dot marks M are arranged in a cross shape in a manner having a complementary symmetrical positional relationship. In this case, a structure in which the dot marks M are not provided at the cross position may also be adopted. On the other hand, a collective alignment mark LL consisting of the dot marks M arranged in an L shape may also be formed.

[0057] exist Figure 3 In (B), there is a Figure 3 (A) A different form of collective alignment mark L'. The collective alignment mark L' is composed of dot marks M surrounding each single-chip substrate area CS. However, in the collective alignment mark L', Figure 3 Like the collective alignment mark L shown in (A), the collective alignment mark L1 (L2) includes dot marks M arranged in a cross shape (or L shape) at the four corners of each individual substrate region CS.

[0058] Figure 3 (A) Figure 3 The dot marks M shown in (B) are configured as follows: each of the dot marks has a roughly circular outline and has a size of roughly the same diameter (e.g., 100 μm) less than the width K of the gap SM between the single-chip substrate regions CS. Furthermore, the dot marks M are arranged at a constant pitch (e.g., about several hundred μm) relative to the XY coordinate system.

[0059] In this embodiment, the form (type) of the collective alignment mark L to be formed on the substrate W is set according to the alignment mark specification (S102). Figure 3 The collective alignment mark L (LL) or collective alignment mark L' shown in (A) and (B) is formed on the substrate W. However, it is also possible to configure a form in which a collective alignment mark other than these can be selected. Alternatively, it is also possible to configure a form in which only Figure 3 In this case, the form of the collective alignment mark can be set without the need for a user's selection operation or the like.

[0060] Then, based on the drawing data corresponding to the set collective alignment mark, an exposure process for forming the collective alignment mark L is performed (S103). As described above, the exposure process can also be performed together with the circuit pattern formation for the single-chip substrate area CS. After the exposure process, a Cu pattern in the shape of a dot mark is formed on the substrate W through a development process and an etching process, thereby forming the collective alignment mark L. The exposure process of the collective alignment mark L can be performed based on the drawing data sent from an external computer connected to the exposure device 10. Alternatively, the exposure process can also be performed based on the drawing data related to the collective alignment mark stored in advance in a memory (not shown) of the exposure device 10.

[0061] Next, use Figures 4 to 6 The exposure device 10 can capture the image of the alignment mark through the imaging unit 60. Figure 3 The collective alignment marks formed on the substrate W by the exposure process shown are subjected to alignment mark extraction processing by the image processing unit 40. Furthermore, the exposure device 10 measures the positions of the collective alignment marks by the measurement unit 300 to perform alignment.

[0062] Figure 4 1 is a flowchart showing an alignment processing step including position measurement of a set of alignment marks.

[0063] When the imaging unit 60 captures the image of the substrate W, image data is acquired (S201, S202). Then, image processing is performed to extract the collective alignment marks (dot marks) from the image data (S203).

[0064] Through the above-mentioned alignment mark forming process, the collective alignment mark is formed on the substrate W. On the other hand, for example, when a pattern is formed on the single-piece substrate region CS while the collective alignment mark is formed, a pattern having a shape and size similar to a dot mark is sometimes formed near the boundary line BL of the single-piece substrate region CS. In order to exclude such a mark similar to the collective alignment mark, an area for extracting the collective alignment mark (hereinafter referred to as the extraction area) is specified here.

[0065] Figure 5 is a diagram showing the extraction area. Figure 5 In (A), the collective registration mark L composed of dot marks M arranged in a cross shape is extracted from the image data based on the extraction area TA. Thereby, the similar mark Mo at a close distance to the collective registration mark L can be excluded.

[0066] Able to follow Figure 2The extraction area TA is defined by the set alignment mark L set in step 102. Here, the cross-shaped extraction area TA corresponding to the set alignment mark L is defined by 7 dot marks M arranged along the X and Y directions, a total of 13. Here, the extraction area TA is set in a manner that matches the grid GR that sets the above-mentioned single-chip substrate area CS.

[0067] In addition, Figure 3 In the case where the collective alignment mark LL is composed of dot marks M arranged in an L shape as shown in (A), an L-shaped extraction area can be set. Figure 5 As shown in (B) of FIG. 8 , extraction areas TA′ arranged in a matrix are defined in accordance with the grid GR.

[0068] After the extraction process of the collective alignment mark is performed, a position (hereinafter referred to as a representative position) serving as a reference of the collective alignment mark is obtained (S204). Here, the representative position of the collective alignment mark can be obtained by any of the following two calculation methods.

[0069] Figure 6 The figure shows two calculation methods for obtaining the representative position of the set alignment mark. As one of the calculation methods, the following calculation method (hereinafter referred to as the average value calculation method) is prepared: the position coordinates (X, Y coordinates) of each dot mark M are calculated, and the average value is obtained as the representative position. In addition, the following calculation method (hereinafter referred to as the intersection calculation method) is prepared: the straight lines x and y along the X and Y directions of the dot mark M are specified, and the intersection CP of the straight lines x and y is obtained as the representative position (refer to Figure 6 (A)).

[0070] In the average calculation method, the coordinates of the center of gravity of each dot mark are obtained, and the average value is calculated as the representative position (refer to Figure 6 As described above, the dot marks arranged in a cross shape are arranged in the same number along the X direction and the Y direction so that the representative position of the set alignment mark can be calculated. That is, the arrangement is symmetrical with the cross position as the center.

[0071] In addition, since the dot-shaped marks are substantially circular, the centroid position substantially coincides with the center position. Also, image processing for obtaining the centroid position of each dot-shaped mark in image data is well-known image processing, and its description is omitted here.

[0072] In the intersection calculation method, first, the center of gravity position coordinates of each dot mark are obtained. Then, the straight lines x and y along the XY direction are specified based on the obtained center of gravity position coordinates of each dot mark. Then, the intersection point CP of the specified straight lines x and y is calculated as the representative position of the collective alignment mark.

[0073] The average calculation method is for Figure 3 The collective alignment mark L in which the dot marks M are arranged in a cross shape and the collective alignment mark L' in which the dot marks M are arranged in a manner surrounding each single-chip substrate area CS are effective. Figure 3 Any set of alignment marks shown in (A) and (B) is also effective. The operator can select the calculation method according to the form of the set alignment mark. Alternatively, the exposure device 10 can be configured to automatically set the calculation method.

[0074] However, for Figure 2 The substrate W subjected to the exposure process for forming alignment marks may have some dot marks missing due to contamination, damage, or pattern disappearance due to grinding of the substrate W after the exposure process. In addition, the dot marks may not be extracted during image processing due to the illumination state of the imaging unit 60 during imaging, deviation in the diameter of the dot marks, uneven thickness of the photoresist applied from above the dot marks, and the like.

[0075] exist Figure 6 (B) shows the collective alignment marks LA and LB where some of the dot marks are missing or cannot be extracted. In order to cope with this situation, the representative position of the collective alignment mark is calculated by excluding some of the dot marks.

[0076] Specifically, in the case of the average value calculation method, the average value is calculated by excluding the dot marks (see reference symbol M') that are symmetrically positioned with respect to the cross position. That is, the average value is calculated by excluding the dot marks that do not have a complementary symmetrical positional relationship.

[0077] In the case of the intersection calculation method, missing or unextractable dot marks are excluded to define straight lines x and y along the XY directions, and the intersection point is calculated as a representative position.

[0078] After calculating the representative position of the collective alignment mark, the exposure position of each single-chip substrate region CS is calculated (S205). Here, the exposure position of each single-chip substrate region CS is obtained based on the representative positions of all four collective alignment marks formed in the space SS near the four corners of each single-chip substrate region CS. However, without considering scaling, etc., the exposure position of each single-chip substrate region CS can be obtained based on the representative positions of at least two collective alignment marks located on the diagonal line. The exposure position of each single-chip substrate region CS can also be obtained based on the representative positions of three collective alignment marks.

[0079] Based on the exposure positions of each single-chip substrate area obtained, alignment (correction) corresponding to the deviation of the actually measured exposure position relative to the designed exposure position of the single-chip substrate area is performed. Specifically, correction processing of the drawing data is performed. Then, exposure processing (S206) is performed to form a pattern at the exposure position corrected by the alignment. In addition, the processing of steps S202 to S205 can be configured to be processed in the control unit 20 or the like based on the execution of the program.

[0080] As described above, in the exposure device 10 of the present embodiment, on the substrate W, collective alignment marks L, L', LL can be formed in the space SS set near the four corners of the single-piece substrate area in the gap (cutting space) SM of each single-piece substrate area CS. The collective alignment marks L, L', LL are composed of dot marks M arranged in a cross shape or an L shape or dot marks M arranged in a manner to surround each single-piece substrate area CS.

[0081] Furthermore, in the exposure device 10, the exposure position of each individual substrate region can be determined by imaging the collective alignment mark L and measuring (calculating) the representative position of the collective alignment mark L. Then, alignment can be performed based on the determined exposure position, and exposure processing can be executed.

[0082] When the mounting density of the single-piece substrate area CS relative to the substrate W is to be increased, the gap SM between the single-piece substrate areas CS is limited in space. However, since a plurality of dot-shaped marks M are formed, the alignment marks can be formed in a narrow space while having a recognizable size, and the alignment marks can be reliably extracted. Furthermore, even if the diameters of the dot-shaped marks M vary to some extent when they are arranged, alignment is performed based on the position of their center of gravity, so that the influence on the alignment accuracy can be suppressed.

[0083] The collective alignment mark L in which the dot marks M are arranged in a cross shape or an L shape is set in the space SS near the four corners outside the single-chip substrate area CS, rather than being set inside the single-chip substrate area CS. Therefore, the positions of the four corners of the single-chip substrate area CS can be accurately obtained according to the accuracy of the arrangement (formation position) of the dot marks M, and as a result, high-precision alignment can be performed. In addition, even if the dot marks are missing or a part of the dot marks are excluded due to the extraction process based on image data, in any of the average value calculation method and the intersection calculation method, the exposure position can be appropriately obtained by performing the mark exclusion process, etc.

[0084] Since the alignment mark is not provided in the single-chip substrate area CS, the circuit pattern can be formed near the boundary line BL of the single-chip substrate area CS, and a high-density processing circuit pattern can be formed. In addition, since a method of extracting connection pads or the like as alignment marks is not adopted, high-precision alignment can be performed regardless of the circuit form of various patterns formed in each single-chip substrate area CS. In addition, the image processing for extracting the alignment mark is not complicated, which helps to improve productivity.

[0085] Since the dot marks M are formed along the boundary line BL of the rectangular single-chip substrate region CS, the size and number of arrangement of the dot marks M can be appropriately set according to the specifications, characteristics, manufacturing conditions, etc. of the substrate W. On the other hand, since the semiconductor package of the single-chip substrate region CS is cut out in the manufacturing process of the substrate W, the formation of the collective alignment mark L does not affect the quality of the semiconductor package.

[0086] The substrate W is not limited to a resin substrate for printed wiring, and a silicon wafer or the like may be used as a substrate for forming and aligning the collective alignment mark. In this case, the collective alignment mark is formed on the scribe line of the silicon wafer. Furthermore, the collective alignment mark may be formed and aligned on a substrate other than an FC-BGA substrate, such as a dummy wafer of FO-WLP. A multi-pattern substrate, i.e., a substrate having a plurality of rectangular pattern areas arranged in a matrix at predetermined intervals, may be used as an object.

[0087] In this embodiment, the formation and alignment of the collective alignment mark are both performed in the exposure device, but the formation and alignment of the collective alignment mark may be performed between different exposure devices. In addition, the collective alignment mark may be formed by processing by a laser processing device. Alternatively, the position measurement and alignment of the collective alignment mark may be performed by a dedicated measurement device for detecting the alignment mark.

Claims

1. An alignment method, For a multi-pattern substrate having a plurality of rectangular pattern regions, a collective alignment mark is formed at least in the spaces near the four corners of each rectangular pattern region. photographing the multi-patterned substrate, Determining the representative position of the collective alignment mark based on the image data obtained by photographing, The pattern forming position of each rectangular pattern area is determined according to the measured representative position of the collective alignment mark, It is characterized in that The collective alignment mark includes a plurality of dot marks arranged in a cross shape or an L shape along the boundary lines of the plurality of rectangular pattern regions.

2. The alignment method according to claim 1, characterized in that: An average value of the positions of the plurality of dot marks included in the image data is measured as a representative position of the collective alignment mark.

3. The alignment method according to claim 2, characterized in that: In the image data, dot marks that do not have a complementary symmetrical positional relationship are excluded.

4. The alignment method according to claim 1, characterized in that: Two straight lines that intersect each other along the arrangement of the dot-shaped marks included in the image data are defined, and the intersection of the two straight lines is measured as a representative position of the collective registration mark.

5. The alignment method according to claim 1, characterized in that: Dot marks arranged in a cross shape, an L shape, or a matrix shape are extracted from image data obtained by photographing.

6. The alignment method according to claim 1, characterized in that: The collective alignment mark is formed in such a manner that the plurality of dot-shaped marks surround each rectangular-shaped pattern area.

7. The alignment method according to claim 1, characterized in that: For each rectangular pattern region, the pattern forming position of each rectangular pattern region is determined based on the positions of at least two collective alignment marks located on the diagonal line among the collective alignment marks at the four corners.

8. A method for manufacturing a substrate, characterized in that: The manufacturing method of the substrate comprises the following steps: forming a pattern on the multi-pattern substrate aligned by the alignment method according to any one of claims 1 to 7; and Individual substrates formed corresponding to the pattern regions are cut out from the multi-pattern substrate.

9. A method for forming an alignment mark, Regarding a multi-pattern substrate having a plurality of rectangular pattern regions, a collective alignment mark is formed at least in spaces near four corners of each rectangular pattern region. forming the set collective alignment mark on the multi-pattern substrate, It is characterized in that The collective alignment mark includes a plurality of dot marks arranged in a cross shape or an L shape along the boundary lines of the plurality of rectangular pattern regions.

10. An alignment method, characterized in that: photographing a multi-pattern substrate on which collective alignment marks are formed by the alignment mark forming method according to claim 9, The representative position of the collective alignment mark is determined based on the image data obtained by shooting. The pattern forming position of each rectangular pattern area is determined according to the measured representative position of the collective alignment mark.

11. A storage medium storing a program for causing an exposure device or a laser processing device to execute the following steps: Regarding a multi-pattern substrate having a plurality of rectangular pattern regions, a collective alignment mark is formed at least in spaces near four corners of each rectangular pattern region; and forming the set collective alignment mark on the multi-pattern substrate, It is characterized in that The collective alignment mark includes a plurality of dot marks arranged in a cross shape or an L shape along the boundary lines of the plurality of rectangular pattern regions.

12. A storage medium storing a program, characterized in that: The program causes the following steps to be performed in an exposure device or a measuring device capable of measuring an alignment mark: forming a collective alignment mark on a multi-pattern substrate by executing the program of claim 11, and determining a representative position of the collective alignment mark based on image data obtained by photographing the multi-pattern substrate; as well as The pattern forming position of each rectangular pattern area is determined according to the measured representative position of the collective alignment mark.

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