Insulation structure and electronic device

Abstract

The invention provides an insulation structure and an electronic device, the insulation structure comprises a first substrate, a first conductor and a first groove, and the first substrate comprises a first surface and a second surface which are oppositely arranged; the first conductor is arranged on the first surface and / or the second surface; the first groove and at least one first conductor are positioned on the same surface, and the first groove is adjacent to the first conductor; wherein a first conductive layer is arranged on the surface of the first groove, and the first conductive layer is electrically connected with the first conductor. According to the insulation structure, by means of the first conductive layer electrically connected with the first conductor, a'three-phase point 'with concentrated field intensity in the junction area of the first conductor, the first substrate and the insulation medium is transferred to the end, away from the first conductor, of the first groove; and meanwhile, the equivalent thickness of the end part of the first conductor is increased, so that the potential line change trend of the end part of the first conductor is slowed down, the electric field intensity at the position is reduced, and the insulation reliability is improved.

Description

Technical Field

[0001] The present application relates to the technical field of electrical equipment, and in particular to an insulation structure and an electronic device. Background Art

[0002] In recent years, the technology of the electronic industry has been increasingly advanced, and various electronic devices have developed rapidly in the direction of small size, lightness, modularization, and high voltage. While electronic devices are developing rapidly, they have also encountered various problems. For example, in energy storage systems of 1500V and higher levels, the reliability of the medium-voltage auxiliary power supply gradually decreases with the increase of the voltage level. The reason for the above problems is that the insulation structure of some electronic devices in the medium-voltage auxiliary power supply is prone to partial discharge and accelerated aging. Specifically, the insulation structure in the related art generally includes a substrate and a conductor arranged on the substrate. The edge tip of the conductor close to the substrate is prone to severe electric field distortion, which leads to partial discharge and even insulation breakdown, accelerating the aging of the insulation structure and seriously affecting the service life of the insulation structure. Summary of the invention

[0003] In order to overcome the above-mentioned defects under the relevant technology, the purpose of the present application is to provide an insulating structure and an electronic device. The present application can improve the problem of electric field distortion at the end of the insulating structure, reduce the probability of local discharge, delay the insulation aging process, and help to improve the service life of the insulating structure.

[0004] In one aspect, the present application provides an insulation structure, comprising:

[0005] A first substrate, the first substrate comprising a first surface and a second surface arranged opposite to each other;

[0006] A first conductor, wherein the first conductor is disposed on the first surface and / or the second surface;

[0007] a first groove, wherein the first groove and at least one of the first conductors are located on the same plane and are adjacent to the first conductor;

[0008] A first conductive layer is disposed on the surface of the first groove, and the first conductive layer is electrically connected to the first conductor.

[0009] In a possible implementation manner, a first connection layer is further provided on the first substrate, and the first conductor is connected to the first conductive layer through the first connection layer.

[0010] In a possible implementation manner, the first connection layer is a part of the first conductive layer, wherein the first conductive layer is electrically connected to the first conductor after extending out of the first groove.

[0011] In a possible implementation, the device further includes a second conductor and a second groove, wherein the first conductor, the first groove, the second conductor and the second groove are all located on the same surface, and the second groove is adjacent to the second conductor;

[0012] A second conductive layer is disposed on the surface of the second groove, and the second conductive layer is electrically connected to the second conductor; and the potential of the first conductor is different from the potential of the second conductor.

[0013] In a possible implementation manner, a second conductor is further included, wherein the second conductor is disposed adjacent to the first substrate, and a potential of the first conductor is different from a potential of the second conductor.

[0014] In a possible implementation, the invention further includes a second conductor and a second groove, wherein the first conductor and the first groove are arranged on the first surface, the second conductor and the second groove are arranged on the second surface, and the second groove is arranged adjacent to the second conductor;

[0015] A second conductive layer is disposed on the surface of the second groove, and the second conductive layer is electrically connected to the second conductor; and the potential of the first conductor is different from the potential of the second conductor.

[0016] In a possible implementation manner, a heat sink is further included, and the heat sink is disposed on the second surface.

[0017] In a possible implementation, the device further includes a second conductor and a heat sink, wherein the first conductor and the first groove are arranged on the first surface, the second conductor is arranged on the second surface, and the potential of the first conductor is different from the potential of the second conductor;

[0018] The heat sink is disposed on the second surface, and a projection of the first conductor on the first surface is located within a projection range of the second conductor and / or the heat sink on the first surface.

[0019] In a possible implementation, there are a plurality of the first conductors, and the plurality of the first conductors are connected in series and / or in parallel, wherein the first groove is disposed adjacent to an outer side of an outermost first conductor.

[0020] In a possible implementation, the method further includes:

[0021] a second substrate, the second substrate comprising a third surface and a fourth surface opposite to each other;

[0022] a second conductor, the second conductor being disposed on the third surface and / or the fourth surface;

[0023] a second groove, wherein the second groove and at least one of the second conductors are located on the same plane and are adjacent to the second conductor;

[0024] The potential of the first conductor is different from the potential of the second conductor; a second conductive layer is disposed on the surface of the second groove, and the second conductive layer is electrically connected to the second conductor.

[0025] In a possible implementation manner, a second connection layer is further provided on the second substrate, and the second conductor is connected to the second conductive layer through the second connection layer.

[0026] In a possible implementation manner, the second connection layer is a part of the second conductive layer, wherein the second conductive layer is electrically connected to the second conductor after extending out of the second groove.

[0027] In a possible implementation manner, the first conductor and the first groove are both disposed on the first surface, and the first groove includes a side wall and a bottom wall.

[0028] In a possible implementation manner, the thickness of the first conductor located on the side wall and the bottom wall is the same.

[0029] In a possible implementation manner, the side wall is perpendicular to the bottom wall.

[0030] In a possible implementation manner, the side wall and the bottom wall are connected via an arc transition section.

[0031] In a possible implementation manner, in a cross section perpendicular to the first substrate, the bottom wall and the side walls on both sides thereof jointly form an arc shape.

[0032] In a possible implementation manner, a shielding structure is disposed in the first groove.

[0033] In a possible implementation manner, the shielding structure is a conductive wire, and the conductive wire is connected to the side wall of the first conductive layer away from the first conductive body.

[0034] In a possible implementation manner, a side of the wire away from the bottom wall is higher than the first surface.

[0035] In a possible implementation manner, the shielding structure is a conductive protrusion, and the conductive protrusion is located on the first conductive layer on the bottom wall surface.

[0036] In a possible implementation manner, the conductive protrusion extends in a direction away from the bottom wall, and a side of the conductive protrusion away from the bottom wall is higher than the first surface.

[0037] In one possible implementation, the shielding structure is a conductive shielding cover, which includes a main body and a bending portion. The main body is arranged parallel to the first surface and shields a portion of the opening of the first groove. The first end of the main body is electrically connected to the first conductor and / or the first conductive layer, and the second end of the main body is connected to the bending portion, and the bending portion is bent toward the first groove.

[0038] In a possible implementation manner, the main body is arranged higher than the first surface.

[0039] In a possible implementation manner, a side of the first groove close to the first conductor is spaced apart from the first conductor by a preset distance.

[0040] In a possible implementation, the preset distance is between 0 mm and 0.3 mm.

[0041] In a possible implementation manner, the first conductive layer is a metal layer or a semiconductive layer.

[0042] In a possible implementation manner, the first substrate is a solid insulating plate.

[0043] In a possible implementation manner, the solid insulating board is a printed circuit board or a ceramic board.

[0044] In a possible implementation manner, an insulating medium is further included, and the insulating medium wraps the insulating structure.

[0045] On the other hand, the present application provides an electronic device, comprising any of the above-mentioned insulating structures.

[0046] In a possible implementation, the electronic device includes any one of a transformer, an inductor, a PCB-based busbar, and a power device packaging module.

[0047] The present application provides an insulating structure and an electronic device, wherein the insulating structure comprises a first substrate, a first conductor and a first groove, wherein the first substrate comprises a first surface and a second surface arranged oppositely; the first conductor is arranged on the first surface and / or the second surface; the first groove is located on the same surface as at least one first conductor and is adjacent to the first conductor; wherein a first conductive layer is arranged on the surface of the first groove, and the first conductive layer is electrically connected to the first conductor. The insulating structure of the present application utilizes the first conductive layer electrically connected to the first conductor to transfer the "triple point" where the field strength of the first conductor, the first substrate and the insulating medium are concentrated to the end of the first groove away from the first conductor; at the same time, the equivalent thickness of the end of the first conductor is increased, so that the change trend of the potential line at the end of the first conductor is slowed down, the electric field strength here is reduced, the electric field distortion problem at the end of the first conductor in the insulating structure is improved, and the insulation reliability is improved. It can be seen from the above description that the present application can improve the problem of electric field distortion at the end of the insulating structure, reduce the probability of partial discharge, delay the insulation aging process, and help to improve the service life of the insulating structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related technologies, the following is a brief introduction to the drawings required for use in the embodiments or the related technical descriptions. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0049] Figure 1 It is a structural diagram of an insulation structure in the related art;

[0050] Figure 2 It is a structural diagram of another insulating structure in the related art;

[0051] Figure 3 A structural diagram of another insulating structure in the related art;

[0052] Figure 4 It is a structural diagram of another insulation structure in the related art;

[0053] Figure 5 A simplified structural diagram of an insulation structure provided in one embodiment of the present application;

[0054] Figure 6 A simplified structural diagram of an insulation structure provided in another embodiment of the present application;

[0055] Figure 7 A simplified structural diagram of an insulation structure provided in yet another embodiment of the present application;

[0056] Figure 8A simplified structural diagram of an insulation structure provided in yet another embodiment of the present application;

[0057] Fig. 9 A simplified structural diagram of an insulation structure provided in yet another embodiment of the present application;

[0058] Fig.10 A simplified structural diagram of an insulation structure provided in yet another embodiment of the present application;

[0059] Fig.11 A simplified structural diagram of an insulation structure provided in yet another embodiment of the present application;

[0060] Fig.12 A simplified structural diagram of an insulation structure provided in yet another embodiment of the present application;

[0061] Fig.13 A simplified structural diagram of an insulation structure provided in yet another embodiment of the present application;

[0062] Fig.14 A simplified structural diagram of a first substrate provided in one embodiment of the present application;

[0063] Fig.15 A simplified structural diagram of a first substrate provided in another embodiment of the present application;

[0064] Fig.16 A simplified structural diagram of a first substrate provided in yet another embodiment of the present application;

[0065] Fig.17 A simplified structural diagram of an insulation structure provided in yet another embodiment of the present application;

[0066] Fig.18 A simplified structural diagram of an insulation structure provided in yet another embodiment of the present application;

[0067] Fig.19 A simplified structural diagram of an insulation structure provided in yet another embodiment of the present application;

[0068] Fig. 20 A simplified structural diagram of an electronic device provided in one embodiment of the present application.

[0069] Reference numerals:

[0070] 10-substrate; 20-conductor; 30-round wire; 40-flat wire;

[0071] 100 - first substrate; 101 - first surface; 102 - second surface; 110 - first groove; 111 - side wall; 112 - bottom wall; 113 - arc transition section; 120 - second groove;

[0072] 200- a first conductor;

[0073] 300- a first conductive layer;

[0074] 400-first connection layer;

[0075] 500- second conductor;

[0076] 600- second conductive layer;

[0077] 700 - second substrate; 701 - third surface; 702 - fourth surface;

[0078] 810-conducting wire; 820-conductive protrusion; 830-conductive shielding cover; 831-main body; 832-bending part;

[0079] 1000-heat sink; 2000-power device;

[0080] X-first direction; Y-second direction. DETAILED DESCRIPTION

[0081] First, it should be noted that in the description of this embodiment, the first direction X and the second direction Y are two directions perpendicular to each other in a plane, wherein the first direction X may be, for example, a vertical direction, and the second direction Y may be, for example, a horizontal direction.

[0082] Figure 1 This is a simplified diagram of an insulation structure in the related art. Figure 1 The insulating structure in the related art includes a substrate 10 and a conductor 20 disposed on the substrate 10. In a plane parallel to the first direction X and the second direction Y, the projection shape of the conductor 20 is substantially trapezoidal. The edge tip of the conductor 20 close to the first substrate ( Figure 1 Because the thickness at points A and B is relatively thin (usually only tens of um thick), the equipotential lines change relatively quickly and the field strength is relatively concentrated; at the same time, this is also the "triple point" area where the three materials "conductor-substrate-insulating medium" meet, which further aggravates the local electric field distortion in this area, making local discharge prone to occur and even leading to insulation breakdown, accelerating the aging of the insulation structure and seriously affecting the service life of the insulation structure.

[0083] In order to alleviate the above problems, the related art also provides several improved insulation structures.

[0084] Figure 2 FIG. 1 is a schematic diagram of another insulating structure in the related art. Figure 2 As shown, the insulation structure is Figure 1A round wire 30 is welded on the basis of the insulating structure shown. Specifically, the round wire 30 is welded on the surface of the conductor 20 facing away from the substrate 10. The insulating structure can alleviate the phenomenon of electric field distortion at the edge tip of the conductor 20 to a certain extent, but it has high requirements on the welding accuracy of the round wire 30, and the electric field control effect at the edge tip of the conductor 20 may be affected if the welding position of the round wire 30 is not appropriate. In addition, this solution also increases the volume of the insulating structure.

[0085] Figure 3 FIG. 1 is a schematic diagram of another insulating structure in the related art. Figure 3 As shown, the insulation structure is Figure 1 A flat wire 40 is introduced on the basis of the insulating structure shown. Specifically, the flat wire 40 is welded on the surface of the conductor 20 facing away from the substrate 10. The insulating structure can also alleviate the phenomenon of electric field distortion at the edge tip of the conductor 20 to a certain extent, but after the flat wire 40 is introduced, a new tip will be formed at the end of the flat wire 40, which will also cause electric field distortion, affecting the service life of the insulating structure. In order to improve the electric field at the edge tip of the conductor 20, the thickness of the flat wire 40 is required to be thick enough, which will make the volume of the insulating structure larger.

[0086] Figure 4 FIG. 1 is a schematic diagram of another insulating structure in the related art. Figure 4 As shown, the insulation structure is Figure 1 The thickness of the conductor 20 is directly increased on the basis of the insulation structure shown. This insulation structure has a poor effect on improving the electric field distortion at the edge tip of the conductor 20 (for example, increasing the thickness of the conductor 20 from 1oz to 6oz can only reduce the end electric field by 13%), and the process is relatively complex and the implementation cost is relatively high during the specific implementation.

[0087] In view of this, the embodiment of the present application aims to provide an insulating structure and an electronic device, by providing a groove and providing a conductive layer on the inner surface of the groove, the end of the conductor is electrically connected to the conductive layer, so as to transfer the "triple point" where the field strength is concentrated in the interface area of ​​the three materials "conductor-substrate-insulating medium" to the end of the conductive layer away from the conductor; at the same time, the equivalent thickness of the end of the conductor is increased, the equipotential line changes relatively smoothly, the electric field strength here is reduced, the electric field distortion problem at the end of the conductor in the insulating structure is improved, and the insulation reliability is improved. In addition, the insulating structure of this embodiment does not lead to an increase in volume.

[0088] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments.

[0089] Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0090] Figure 5 A simplified structural diagram of an insulation structure provided in one embodiment of the present application.

[0091] Please refer to Figure 5 , this embodiment provides an insulation structure, including:

[0092] A first substrate 100, the first substrate 100 comprises a first surface 101 and a second surface 102 arranged opposite to each other;

[0093] At least one first conductor 200, the first conductor 200 is disposed on the first surface 101 and / or the second surface 102;

[0094] At least one first groove 110, the first groove 110 and at least one first conductive body 200 are located on the same surface and are adjacent to the first conductive body 200;

[0095] The surface of the first groove 110 is provided with a first conductive layer 300, and the first conductive layer 300 is electrically connected to the first conductor 200. The first conductive layer 300 may be, for example, a metal layer or a semiconductive layer.

[0096] Exemplarily, the first substrate 100 of the present embodiment may be a solid insulating board, which may be, for example, a printed circuit board or a ceramic board. The first substrate 100 includes a first surface 101 and a second surface 102 arranged opposite to each other along a first direction X, and the first conductor 200 and the first groove 110 may be both arranged on the first surface 101; wherein the first groove 110 may be arranged on both sides of the first conductor 200 along the second direction Y. The first conductive layer 300 may be formed in the first groove 110 by deposition; the first conductive layer 300 may be a metal layer or a semi-conductive layer; preferably, the first conductive body 200 may be a copper foil with a thickness of <1 mm, such as a copper foil with a thickness of 35 um, 70 um, etc. used in a typical printed circuit board. The end of the first conductive layer 300 is electrically connected to the first conductive body 200. Specifically, the first conductive layer 300 and the first conductive body 200 may be directly connected or indirectly connected through an intermediate medium, and the connection method may be, for example, welding.

[0097] In this embodiment, first grooves 110 are provided at both ends of the first conductor 200, and the ends of the first conductor 200 are electrically connected to the first conductive layer 300 in the first grooves 110, so that the "triple point" ( Figure 5 C and D in the middle) to the end of the first groove 110 away from the first conductor 200 ( Figure 5 At the same time, the equivalent thickness of the end of the first conductor 200 is increased, so that the change trend of the potential line at the end of the first conductive layer 300 is slowed down, the electric field strength there is reduced, the electric field distortion problem at the end of the first conductor 200 in the insulation structure is improved, and the insulation reliability is improved.

[0098] From the above description, it can be seen that this embodiment can improve the problem of electric field distortion at the end of the insulation structure, reduce the probability of partial discharge, delay the insulation aging process, and help to increase the service life of the insulation structure. In addition, the above solution will not increase the volume of the insulation structure.

[0099] exist Figure 5 In the structure shown, the position of the first groove 110 is exactly in contact with the first conductor 200, so the first conductive layer 300 in the first groove 110 can be directly connected to the first conductor 200. This structure requires high process precision.

[0100] In other possible implementations, the side of the first groove 110 close to the first conductor 200 may be separated from the first conductor 200 by a preset distance. In other words, the first groove 110 is not directly connected to the first conductor 200, and the first conductive layer 300 is electrically connected to the first conductor 200 through an intermediate medium. This structure can reduce the process difficulty while ensuring a good end electric field improvement effect, and avoid damaging the first conductor 200 during the processing of the first groove 110.

[0101] Figure 6 This is a simplified structural diagram of an insulation structure provided by another embodiment of the present application. Figure 6 In a possible implementation manner, a first connection layer 400 is further provided on the first substrate 100 of this embodiment, and the first conductor 200 is connected to the first conductive layer 300 through the first connection layer 400 .

[0102] Exemplarily, the first connection layer 400 is disposed on both sides of the first conductor 200 along the second direction Y, so as to respectively connect the first conductive layers 300 on both sides. The first connection layer 400 can be connected to the first conductor 200 and the first conductive layer 300 by welding, so as to achieve electrical connection between the first conductor 200 and the first conductive layer 300. The first connection layer 400 can be, for example, a conductive metal layer such as a copper layer, an aluminum layer, or a semiconductive layer.

[0103] In a possible implementation, the first connection layer 400 may also be a part of the first conductive layer 300; that is, the first connection layer 400 is integrally formed with the first conductive layer 300. The first conductive layer 300 extends out of the first groove 110 and is electrically connected to the first conductive body 200.

[0104] In this embodiment, the preset distance may be between 0 mm and 0.3 mm; that is, the length of the first connection layer 400 in the second direction Y is between 0 mm and 0.3 mm. The preset distance can reduce the difficulty of processing the first groove 110 and protect the first conductor 200 from being accidentally damaged, and can also ensure the improvement effect of the first groove 110 on the electric field at the edge tip of the first conductor 200.

[0105] Figure 7 This is a simplified structural diagram of an insulation structure provided in yet another embodiment of the present application. Figure 7 In a possible implementation manner, the present embodiment further includes a second conductor 500 and a second groove 120 , the first conductor 200 , the first groove 110 , the second conductor 500 , and the second groove 120 are all located on the same surface, and the second groove 120 is adjacent to the second conductor 500 .

[0106] A second conductive layer 600 is disposed on the surface of the second groove 120, and the second conductive layer 600 is electrically connected to the second conductive body 500. The potential of the first conductive body 200 is different from the potential of the second conductive body 500.

[0107] Exemplarily, the second conductor 500 and the second conductive layer 600 may also be connected via a connecting layer (not shown in the figure), and the connecting layer may be, for example, a conductive metal layer such as a copper layer, an aluminum layer, or a semiconductive layer. In a possible implementation, the connecting layer may also be a part of the second conductive layer 600; that is, the connecting layer and the second conductive layer 600 are integrally formed. The second conductive layer 600 and the second connecting layer may be, for example, a conductive metal layer such as a copper layer, an aluminum layer, or a semiconductive layer.

[0108] Exemplarily, the first conductor 200, the first groove 110, the second conductor 500 and the second groove 120 of the present embodiment can all be arranged on the first surface 101; wherein, the first groove 110 can be arranged on both sides of the first conductor 200 along the second direction Y, and the second groove 120 can be arranged on both sides of the second conductor 500 along the second direction Y. The first conductive layer 300 and the second conductive layer 600 can both be metal layers or semi-conductive layers. The first conductive layer 300 and the second conductive layer 600 can both be formed in the corresponding grooves by deposition. The end of the first conductive layer 300 is electrically connected to the first conductive body 200, and the end of the second conductive layer 600 is electrically connected to the second conductive body 500; both can be directly connected or indirectly connected through an intermediate medium; the specific connection method can be, for example, welding.

[0109] Since the potential of the first conductor 200 is different from the potential of the second conductor 500 , the above structure can reduce the high field strength at the end of the conductor in the area where the first conductor 200 and the second conductor 500 face each other.

[0110] Figure 8 This is a simplified structural diagram of an insulation structure provided in another embodiment of the present application. Figure 8 In a possible implementation manner, the present embodiment further includes a second conductor 500 , the second conductor 500 is disposed adjacent to the first substrate 100 , and the potential of the first conductor 200 is different from the potential of the second conductor 500 .

[0111] Exemplarily, the second conductor 500 in this embodiment can be, for example, a magnetic core in a magnetic element, and the dotted line is the symmetry axis of the second conductor 500. The second conductor 500 is disposed adjacent to the first substrate 100 along the second direction Y, that is, the second conductor 500 is disposed with a gap between the first conductor 200 disposed on the first substrate 100. Since the potential of the first conductor 200 is different from the potential of the second conductor 500, the first groove 110 is disposed on both sides of the first conductor 200 along the second direction Y, and the first conductive layer 300 is disposed in the first groove 110, which can reduce the high field strength of the end of the first conductor 200 to the second conductor 500.

[0112] Fig. 9 This is a simplified structural diagram of an insulation structure provided in another embodiment of the present application. Fig. 9 In a possible implementation, the present embodiment further includes a second conductor 500 and a second groove 120 , the first conductor 200 and the first groove 110 are arranged on the first surface 101 , the second conductor 500 and the second groove 120 are arranged on the second surface 102 , and the second groove 120 is adjacent to the second conductor 500 .

[0113] A second conductive layer 600 is disposed on the surface of the second groove 120 , and the second conductive layer 600 is electrically connected to the second conductive body 500 ; the potential of the first conductive body 200 is different from the potential of the second conductive body 500 .

[0114] By way of example, in this embodiment, a plurality of mutually electrically connected first conductors 200 and a plurality of mutually electrically connected second conductors 500 are respectively provided on the first surface 101 and the second surface 102 of the first substrate 100. Specifically, the first conductors 200 and the first grooves 110 can both be provided on the first surface 101, and in the second direction Y, the first grooves 110 are located outside the outermost first conductors 200. The second conductors 500 and the second grooves 120 can both be provided on the second surface 102, and in the second direction Y, the second grooves 120 are located outside the outermost second conductors 500. The arrangement of the first conductive layer 300 and the second conductive layer 600 in their respective grooves is the same as that described in the above embodiment, and will not be repeated here.

[0115] In this embodiment, there can be multiple first conductors 200 and multiple second conductors 500. When multiple first conductors 200 are connected in parallel, since the potentials of multiple first conductors 200 are the same, the first groove 110 can be only adjacent to the outer side of the outermost first conductor 200. When multiple second conductors 500 are connected in parallel, the second groove 120 can be only adjacent to the outer side of the outermost second conductor 500. In other embodiments of the present case, when multiple first conductors 200 are connected in series, along the second direction Y, the first groove 110 can be opened on both sides of each first conductor 200, or when multiple second conductors 500 are connected in series, the second groove 120 can be opened on both sides of each second conductor 500, and the present case is not limited thereto.

[0116] In this embodiment, since the potential of the first conductor 200 is different from that of the second conductor 500, a first groove 110 is set on the outer side of the first conductor 200, and a first conductive layer 300 is set in the first groove 110, which can reduce the high field strength at the end of the first conductor 200; a second groove 120 is set on the outer side of the second conductor 500, and a second conductive layer 600 is set in the second groove 120, which can reduce the high field strength at the end of the second conductor 500.

[0117] Fig.10 This is a simplified structural diagram of an insulation structure provided in another embodiment of the present application. Fig.10 In a possible implementation manner, this embodiment further includes a heat sink 1000 , and the heat sink 1000 is disposed on the second surface 102 .

[0118] By way of example, in this embodiment, a plurality of first conductors 200 are disposed on the first surface 101 of the first substrate 100. The plurality of first conductors 200 are spaced apart from each other along the second direction Y. Each first conductor 200 can be connected to a power device 2000, and specifically can be connected to the backplane or PIN pin of the power device 2000. In this embodiment, the potentials of the plurality of first conductors 200 can be different from each other. Both sides of each first conductor 200 are provided with a first groove 110, and a first conductive layer 300 electrically connected to the corresponding first conductor 200 is disposed in the first groove 110. The heat sink 1000 is disposed on the second surface 102 and electrically connected to the second conductor 500. The first conductor 200 on the first surface 101 and the second conductor 500 on the second surface 102 have different potentials.

[0119] It can be understood that when some of the first conductors 200 among the multiple first conductors 200 are connected in parallel, the potentials of the first conductors 200 connected in parallel are the same. At this time, it is only necessary to set the first groove 110 and the first conductive layer 300 outside the outermost first conductor 200 among the first conductors 200 connected in parallel.

[0120] In this embodiment, the first groove 110 is arranged on the outer side of the first conductor 200, and the first conductive layer 300 is arranged in the first groove 110, which can reduce the high field strength at the end of the first conductor 200 and the end of the second conductor 500. Since the potentials of different first conductors 200 are also different from each other, the first groove 110 is arranged on both sides of each first conductor 200, and the first conductive layer 300 is arranged in the first groove 110, which can reduce the high field strength at the ends of two adjacent first conductors 200; the second groove 120 is arranged on the outer side of the second conductor 500, and the second conductive layer 600 is arranged in the second groove 120, which can reduce the high field strength at the end of the second conductor 500.

[0121] Fig.11 This is a simplified structural diagram of an insulation structure provided in another embodiment of the present application. Fig.11 , Fig.11 and Fig.10 The difference between the embodiments shown is that, further, in this embodiment, the projection of the first conductor 200 on the first surface 101 is located within the projection range of the second conductor 500 and / or the heat sink 1000 on the first surface 101. At this time, in the first direction X, the first conductor 200 and the second conductor 500 are not directly opposite to each other, and there is no need to set a metallized groove structure on both sides of the second conductor 500.

[0122] Fig.12 This is a simplified structural diagram of an insulation structure provided in another embodiment of the present application. Fig.12 , and Fig.11 The difference between the shown embodiments is that Fig.12 Only the case where one first conductive body 200 is included is shown.

[0123] Fig.13 This is a simplified structural diagram of an insulation structure provided in another embodiment of the present application. Fig.13 In a possible implementation manner, this embodiment further includes:

[0124] A second substrate 700, the second substrate 700 includes a third surface 701 and a fourth surface 702 opposite to each other;

[0125] at least one second conductor 500, the second conductor 500 being disposed on the third surface 701 and / or the fourth surface 702;

[0126] at least one second groove 120, the second groove 120 and at least one second conductor 500 are located on the same surface and are adjacent to the second conductor 500;

[0127] The potential of the first conductor 200 is different from that of the second conductor 500. A second conductive layer 600 is disposed on the surface of the second groove 120, and the second conductive layer 600 is electrically connected to the second conductor 500. The second conductive layer 600 may be, for example, a metal layer or a semiconductive layer.

[0128] By way of example, this embodiment may be two planar winding structures in a planar magnetic element, and both the first substrate 100 and the second substrate 700 may be solid insulating plates, which may be, for example, printed circuit boards or ceramic plates. A plurality of first conductors 200 connected in series may be provided on the second surface 102 of the first substrate 100 to form a first winding, and along the second direction Y, first grooves 110 may be provided on both sides of the outermost first conductors 200, and a first conductive layer 300 electrically connected to the first conductors 200 may be provided in the first grooves 110. A plurality of second conductors 500 connected in series may be provided on the third surface 701 of the second substrate 700 to form a second winding, and along the second direction Y, second grooves 120 may be provided on both sides of the outermost second conductors 500, and a second conductive layer 600 electrically connected to the second conductors 500 may be provided in the second grooves 120.

[0129] Through the above structure, this embodiment can reduce the high electric field strength at the end of the first conductor 200 and the end of the second conductor 500 .

[0130] Furthermore, a second connection layer (not shown in the figure) is also provided on the second substrate 700 , and the second conductor 500 is connected to the second conductive layer 600 via the second connection layer.

[0131] Exemplarily, the second connection layer is disposed on both sides of the second conductor 500 along the second direction Y so as to respectively connect the second conductive layers 600 on both sides. The second connection layer can be connected to the second conductor 500 and the second conductive layer 600 by welding so as to achieve electrical connection between the second conductor 500 and the second conductive layer 600. The second connection layer can be, for example, a conductive metal layer such as a copper layer or an aluminum layer or a semiconductive layer.

[0132] In a possible implementation, the second connection layer of this embodiment is a part of the second conductive layer 600; that is, the second connection layer and the second conductive layer 600 are integrally formed. The second conductive layer 600 extends out of the second groove 120 and is electrically connected to the second conductor 500.

[0133] Fig.14 This is a simplified structural diagram of the first substrate provided in one embodiment of the present application. Please continue to refer to Figure 5 and Fig.14 In this embodiment, the first conductor 200 and the first groove 110 are both disposed on the first surface 101 , and the first groove 110 includes a side wall 111 and a bottom wall 112 .

[0134] Exemplarily, the first groove 110 of this embodiment includes two side walls 111 parallel to the first direction X and a bottom wall 112 parallel to the second direction Y, the side walls 111 are perpendicular to the bottom wall 112, and the projection of the first groove 110 in the plane formed by the first direction X and the second direction Y is a square with an opening on one side.

[0135] The arrangement of the first groove 110 improves the electric field distortion problem at the edge tip of the first conductor 200. However, the first conductive layer 300 at both ends of the sidewall 111 of the first groove 110 is a new electric field concentration area (refer to Figure 5 In order to further improve the insulation reliability of the product, it is necessary to improve these two new end electric field concentration problems.

[0136] Fig.15 This is a simplified structural diagram of the first substrate provided in another embodiment of the present application. Fig.15 In this embodiment, the side wall 111 and the bottom wall 112 are connected by an arc transition section 113.

[0137] Compared to Fig.14 The embodiment shown is beneficial to improving the electric field concentration problem of the first conductive layer 300 at the connecting portion of the side wall 111 and the bottom wall 112, further reducing the probability of partial discharge, and improving the reliability of the insulation structure.

[0138] Fig.16 This is a schematic diagram of the structure of the first substrate provided in another embodiment of the present application. Fig.16 In this embodiment, in a cross section perpendicular to the first substrate 100 , the bottom wall 112 and the side walls 111 on both sides thereof together form an arc shape.

[0139] Compared to Fig.15 The embodiment shown is conducive to further improving the electric field concentration problem of the first conductive layer 300 at the connecting portion of the side wall 111 and the bottom wall 112, so that the electric field distribution at the end of the first conductive layer 300 is more uniform, and the reliability of the insulation structure is further improved.

[0140] In the above embodiment, the thickness of the first conductive body 200 located on the side wall 111 and the bottom wall 112 may be the same.

[0141] It should be noted that the structure of the second groove 120 in this embodiment may also adopt any of the above-mentioned structures of the first groove 110 , which will not be described in detail in this embodiment.

[0142] Fig.17 A simplified structural diagram of an insulation structure provided in yet another embodiment of the present application; Fig.18 A simplified structural diagram of an insulation structure provided in yet another embodiment of the present application; Fig.19 This is a simplified structural diagram of an insulation structure provided in another embodiment of the present application. Figure 17-Figure 19 In this embodiment, a shielding structure is disposed in the first groove 110 to improve the electric field at the end of the first conductive layer 300 at the end of the side wall 111 of the first groove 110 away from the bottom wall 112 .

[0143] In a possible implementation, Fig.17 As shown, the shielding structure is a conductive wire 810 , and the conductive wire 810 is connected to a side wall 111 of the first conductive layer 300 away from the first conductive body 200 .

[0144] For example, the wire 810 in this embodiment can be a copper wire or an aluminum wire, etc. The wire 810 is disposed at one end away from the first conductor 200 in the second direction Y and connected to the side wall 111 of the first groove 110. Furthermore, the side of the wire 810 away from the bottom wall 112 is higher than the first surface 101 to obtain a better electric field improvement effect.

[0145] Through the above structure, this embodiment can increase the equivalent width of the first conductive layer 300 on the side away from the first conductor 200, so that the equipotential lines of the first conductive layer 300 at the end portion of the side wall 111 on the side away from the first conductor 200 in the second direction Y change smoothly, thereby avoiding field strength concentration, reducing the probability of local discharge, delaying the insulation aging process, and helping to improve the service life of the insulation structure.

[0146] In a possible implementation, Fig.18As shown, the shielding structure is a conductive protrusion 820 , and the conductive protrusion 820 is located on the first conductive layer 300 on the surface of the bottom wall 112 .

[0147] For example, the conductive protrusion 820 of this embodiment may be located in the middle of the bottom wall 112 in the second direction Y; the material of the conductive protrusion 820 may be the same as the material of the first conductive layer 300. The conductive protrusion 820 may be formed on the first conductive layer 300 by deposition. Furthermore, the conductive protrusion 820 extends in a direction away from the bottom wall 112, and the side of the conductive protrusion 820 away from the bottom wall 112 is higher than the first surface 101, thereby achieving a better high-field shielding effect.

[0148] Through the above structure, this embodiment can optimize the field strength distribution in the first conductive layer 300, so that the equipotential line of the first conductive layer 300 at the end portion of the side wall 111 on the side away from the first conductor 200 changes more smoothly, avoiding field strength concentration, further reducing the probability of local discharge, delaying the insulation aging process, and helping to improve the service life of the insulation structure.

[0149] In a possible implementation, Fig.19 As shown, the shielding structure is a conductive shielding cover 830, which includes a main body 831 and a bending portion 832. The main body 831 is arranged parallel to the first surface 101 and shields a portion of the opening of the first groove 110. The first end of the main body 831 is electrically connected to the first conductor 200 and / or the first conductive layer 300, and the second end of the main body 831 is connected to the bending portion 832, and the bending portion 832 is bent toward the inside of the first groove 110.

[0150] Exemplarily, the conductive shielding cover 830 of this embodiment can be formed by bending copper sheets, aluminum sheets and other materials; the main body 831 is arranged along the second direction Y and covers part of the opening of the first groove 110, and the main body 831 electrically connects the bent portion 832 with the first conductor 200 and / or the first conductive layer 300.

[0151] Through the above structure, this embodiment can improve the field strength distribution in the first conductive layer 300, so that the equipotential line of the first conductive layer 300 at the end portion of the side wall 111 on the side away from the first conductor 200 changes more smoothly, avoiding field strength concentration, further reducing the probability of local discharge, delaying the insulation aging process, and helping to improve the service life of the insulation structure.

[0152] Furthermore, the main body 831 of this embodiment is arranged higher than the first surface 101, thereby achieving a better high-field strength shielding effect.

[0153] This embodiment also includes an insulating medium, which wraps the insulating structure.

[0154] Exemplarily, the insulating medium can be a gas material such as air or inert gas, which is suitable for products with lower voltage levels and lower insulation and safety requirements; it can also be a solid material such as potting glue with better insulation performance, and the potting glue can be used to build a fully potted structure to block the creepage path, which is suitable for products with higher voltage levels and power density requirements.

[0155] This embodiment further provides an electronic device, comprising the insulating structure of any of the above embodiments.

[0156] Specifically, the electronic device of this embodiment includes any one of a transformer, an inductor, a PCB-based busbar, and a power device packaging module.

[0157] Fig. 20 A simplified structural diagram of an electronic device provided in one embodiment of the present application; wherein, Figure 7 The cross-sectional view of the AA section is shown. In one possible implementation, when the insulation structure is applied to a magnetic element, the insulation structure can be a planar transformer, and the first conductor 200 is a spiral structure winding coil (e.g., primary side), with at least 1 turn. The second conductor 500 can be another winding (e.g., secondary side) in the magnetic element, and the insulation structure can be used to reduce the high field strength at the ends of the two windings facing each other.

[0158] Optionally, the magnetic element may include a magnetic core (such as Figure 8 As shown), or without a magnetic core (as shown Fig. 9 and Fig.13 The electronic device may be a transformer or an inductor.

[0159] For example, Figure 8 As shown, the second conductor 500 may be a magnetic core, in which case the insulating structure may be used to reduce the high field strength at the end of the winding conductive layer to the magnetic core.

[0160] For example, the first conductor 200 and the second conductor 500 may be located on different insulating substrates (eg, Fig.13 It can also be located on both sides of the same insulating substrate (such as Fig. 9 As shown); it can also be located in different layers of the same insulating substrate.

[0161] In a possible implementation, when the insulating structure is applied to a PCB-based busbar, the first conductor 200 and the second conductor 500 may be conductors connected to different potential points in the circuit system, such as the first conductor 200 connected to the positive electrode of the circuit system, and the second conductor 500 connected to the negative electrode of the circuit system. In this embodiment, the number of different conductors located on each side of the insulating substrate is not limited, nor is the number of identical conductors located on each side of the insulating substrate.

[0162] For example, Figure 7 As shown, the first conductor 200 and the second conductor 500 may be located on the same side of the insulating substrate. This embodiment is more suitable when the potential difference between the first conductor 200 and the second conductor 500 is small, that is, when the insulation requirement is low.

[0163] In other possible implementations, the first conductor 200 and the second conductor 500 may also be located on opposite sides of the insulating substrate. This embodiment is suitable for when the potential difference between the first conductor 200 and the second conductor 500 is large and the insulation requirement is high. The two conductive layers are located on opposite sides to fully utilize the insulation capacity of the insulating substrate and avoid the problem of the busbar size being too large due to the high insulation safety distance requirement when the two conductive layers are located on one side.

[0164] In addition, the first conductor 200 and the second conductor 500 may also be located on different layers of the insulating substrate, for example, more than two potentials are integrated in a PCB-based busbar.

[0165] In a possible implementation, when the insulating structure is applied to a power device packaging module, the first conductor 200 is used for fixing and installing the power device, and is connected to the metal back plate or pin of the power device. The second conductor 500 can be located on the other side of the insulating substrate and connected to the heat sink 1000. The insulating structure can be used to reduce the high field strength (such as the high field strength) at the ends of the conductors opposite to the first conductor 200 and the second conductor 500. Fig.10 As shown). It should be noted that, since the number of devices that can be installed on an insulating substrate is unlimited, it can be N (N≥1), and the number of corresponding conductors located on the same side of the insulating substrate is not less than N. When N devices are in parallel (used to improve the current carrying capacity of the device), the corresponding multiple conductors are at the same potential. At this time, the area between any two conductive layers of the multiple conductors does not need to be provided with a metallized groove structure, and only a metallized groove structure needs to be provided in the vicinity of the outer end of the outermost conductor to improve the electric field distortion problem at the end of the outermost conductor.

[0166] like Fig.10 As shown, when N devices are connected in series, the insulating structure may further include a plurality of first conductors 200 with different potentials disposed on the same side of the insulating substrate, and at this time, first grooves 110 and first conductive layers 300 are disposed on both sides of each first conductor 200. The insulating structure may be used to reduce the high field strength at the ends of the first conductors 200 with different potentials.

[0167] like Fig.11 and 12As shown, the projection of the first conductor 200 on the first surface 101 can be located within the projection range of the second conductor 500 and / or the heat sink 1000 on the first surface 101. At this time, in the first direction X, the end of the first conductor 200 is not directly opposite to the end of the second conductor 500. At the same time, the existence of the heat sink makes the equivalent thickness of the end of the second conductor 500 larger, and there is no electric field distortion problem. It is unnecessary to set a metallized groove structure on both sides of the second conductor 500.

[0168] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0169] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0170] It should be noted that in the description of this application, the terms "first" and "second" are only used to facilitate the description of different components, and cannot be understood as indicating or implying a sequential relationship, relative importance, or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features.

[0171] The various embodiments or implementation methods in the present application are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0172] In the description of the present application, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present application. In the present application, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0173] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An insulation structure, characterized in that: include: A first substrate, the first substrate comprising a first surface and a second surface arranged opposite to each other; a first conductor, the first conductor being disposed on the first surface and / or the second surface; a first groove, wherein the first groove and the first conductor are located on the same plane and are adjacent to the first conductor; A first conductive layer is disposed on the surface of the first groove, and the first conductive layer is electrically connected to the first conductor.

2. The insulation structure according to claim 1, characterized in that: A first connecting layer is also provided on the first substrate, and the first conductor is connected to the first conductive layer through the first connecting layer.

3. The insulation structure according to claim 2, characterized in that: The first connection layer is a part of the first conductive layer, wherein the first conductive layer is electrically connected to the first conductor after extending out of the first groove.

4. The insulation structure according to claim 1, characterized in that: It also includes a second conductor and a second groove, wherein the first conductor, the first groove, the second conductor and the second groove are all located on the same surface, and the second groove is adjacent to the second conductor; A second conductive layer is disposed on the surface of the second groove, and the second conductive layer is electrically connected to the second conductor; and the potential of the first conductor is different from the potential of the second conductor.

5. The insulation structure according to claim 1, characterized in that: The device further includes a second conductor, which is disposed adjacent to the first substrate, and a potential of the first conductor is different from a potential of the second conductor.

6. The insulation structure according to claim 1, characterized in that: It also includes a second conductor and a second groove, wherein the first conductor and the first groove are arranged on the first surface, the second conductor and the second groove are arranged on the second surface, and the second groove is arranged adjacent to the second conductor; A second conductive layer is disposed on the surface of the second groove, and the second conductive layer is electrically connected to the second conductor; and the potential of the first conductor is different from the potential of the second conductor.

7. The insulation structure according to claim 6, characterized in that: A heat sink is also included, and the heat sink is arranged on the second surface.

8. The insulation structure according to claim 1, characterized in that: It also includes a second conductor and a heat sink, wherein the first conductor and the first groove are arranged on the first surface, the second conductor is arranged on the second surface, and the potential of the first conductor is different from the potential of the second conductor; The heat sink is disposed on the second surface, and a projection of the first conductor on the first surface is located within a projection range of the second conductor and / or the heat sink on the first surface.

9. The insulation structure according to claim 1, characterized in that: There are a plurality of the first conductors, which are connected in series and / or in parallel, wherein the first groove is disposed adjacent to the outer side of the outermost first conductor.

10. The insulation structure according to claim 1, characterized in that: Also includes: a second substrate, the second substrate comprising a third surface and a fourth surface opposite to each other; a second conductor, the second conductor being disposed on the third surface and / or the fourth surface; a second groove, wherein the second groove and at least one of the second conductors are located on the same plane and are adjacent to the second conductor; The potential of the first conductor is different from the potential of the second conductor; a second conductive layer is provided on the surface of the second groove, and the second conductive layer is electrically connected to the second conductor.

11. The insulation structure according to claim 10, characterized in that: A second connecting layer is also provided on the second substrate, and the second conductor is connected to the second conductive layer through the second connecting layer.

12. The insulation structure according to claim 11, characterized in that: The second connecting layer is a part of the second conductive layer, wherein the second conductive layer is electrically connected to the second conductor after extending out of the second groove.

13. The insulation structure according to claim 1, characterized in that: The first conductor and the first groove are both arranged on the first surface, and the first groove includes a side wall and a bottom wall.

14. The insulation structure according to claim 13, characterized in that: The first conductor located on the side wall and the bottom wall has the same thickness.

15. The insulation structure according to claim 13, characterized in that: The side wall is perpendicular to the bottom wall.

16. The insulation structure according to claim 13, characterized in that: The side wall and the bottom wall are connected via an arc transition section.

17. The insulation structure according to claim 13, characterized in that: In a cross section perpendicular to the first substrate, the bottom wall and the side walls on both sides thereof jointly form an arc shape.

18. The insulation structure according to claim 13, characterized in that: A shielding structure is arranged in the first groove.

19. The insulation structure according to claim 18, characterized in that: The shielding structure is a conductive wire connected to the side wall of the first conductive layer away from the first conductive body.

20. The insulation structure according to claim 19, characterized in that A side of the wire away from the bottom wall is higher than the first surface.

21. The insulation structure according to claim 18, characterized in that The shielding structure is a conductive protrusion, and the conductive protrusion is located on the first conductive layer on the bottom wall surface.

22. The insulation structure according to claim 21, characterized in that The conductive protrusion extends in a direction away from the bottom wall, and a side of the conductive protrusion away from the bottom wall is higher than the first surface.

23. The insulation structure according to claim 18, characterized in that The shielding structure is a conductive shielding cover, which includes a main body and a bending portion. The main body is arranged parallel to the first surface and shields part of the opening of the first groove. The first end of the main body is electrically connected to the first conductor and / or the first conductive layer, and the second end of the main body is connected to the bending portion, and the bending portion is bent toward the first groove.

24. The insulation structure according to claim 23, characterized in that: The main body is arranged higher than the first surface.

25. The insulation structure according to claim 1, characterized in that A side of the first groove close to the first conductor is spaced apart from the first conductor by a preset distance.

26. The insulation structure according to claim 25, characterized in that The preset distance is between 0 mm and 0.3 mm.

27. The insulation structure according to claim 1, characterized in that The first conductive layer is a metal layer or a semiconductive layer.

28. The insulation structure according to claim 1, characterized in that The first substrate is a solid insulating plate.

29. The insulation structure according to claim 28, characterized in that The solid insulating board is a printed circuit board or a ceramic board.

30. The insulation structure according to claim 1, characterized in that An insulating medium is also included, and the insulating medium wraps the insulating structure.

31. An electronic device, characterized in that: Comprising the insulation structure as claimed in any one of claims 1-30.

32. The electronic device according to claim 31, characterized in that: The electronic device includes any one of a transformer, an inductor, a PCB-based busbar and a power device packaging module.

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