Microcrack-free semiconductor chip manufacturing method
By pre-forming a cutting channel window on the glass substrate and filling the buffer material, the problem of microcracks in the cutting process of semiconductor chip monomers is solved, and higher structural integrity and reliability are achieved.
Patent Information
- Application Number
- CN202411618155.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-13
- Publication Date
- 2025-02-14
AI Technical Summary
When making semiconductor chip monomers, microcracks are easily generated during the cutting process of the glass substrate, which affects the structural integrity and reliability of the chip.
A plurality of cutting path windows are pre-formed on the glass substrate, and buffer material is filled in the cutting path window, changing the traditional direct cutting method and providing a cutting path with a more uniform stress distribution.
It effectively avoids the occurrence of microcracks at the edge of the chip, improves the structural integrity and reliability of semiconductor chip monomers, and enhances the yield and performance stability.
Smart Images
Figure CN119446929A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of semiconductor chips, and in particular to a method for manufacturing a semiconductor chip without microcracks. Background Art
[0002] In the field of semiconductor manufacturing, semiconductor chips made on glass substrates are gradually gaining attention, and their unique properties show broad application prospects in the fields of microelectronics and optoelectronics. However, in the process of dividing the semiconductor chips on the entire glass substrate into individual chips, a technical challenge that cannot be ignored is that the edges of the semiconductor chips are prone to microcracks due to cutting stress.
[0003] This process, known as singulation, is a key step in semiconductor chip production. Compared with traditional silicon substrates, glass substrates differ in hardness and brittleness, which places higher demands on the cutting process. During the cutting process, the interaction between the tool and the substrate will produce significant stress, especially at the edge of the chip. If these stresses are not properly controlled, they can easily lead to microcracks. These microcracks not only affect the structural integrity of the chip, but may also have a serious impact on the subsequent electrical performance and reliability, such as increased leakage current and reduced voltage resistance.
[0004] There is currently no effective technical solution to the above problems. Summary of the invention
[0005] The purpose of the present application is to provide a method for manufacturing a semiconductor chip without microcracks, so as to avoid the occurrence of microcracks on a glass substrate when manufacturing a semiconductor chip monomer, thereby affecting the structural integrity and reliability of the semiconductor chip monomer.
[0006] The present application provides a method for manufacturing a semiconductor chip without microcracks, which is used to manufacture a semiconductor chip monomer having a glass substrate. The method for manufacturing a semiconductor chip without microcracks comprises the following steps: S1. Prepare a glass substrate; S2, forming a plurality of cutting path windows on the glass substrate, wherein the plurality of cutting path windows are evenly distributed on the glass substrate along a cutting reference line; S3, manufacturing a functional layer on the glass substrate to obtain a package; S4, cutting the package body along the cutting reference line to obtain a plurality of semiconductor chip units.
[0007] The method for manufacturing a semiconductor chip without microcracks of the present application changes the traditional direct cutting method. By forming multiple cutting path windows on a glass substrate before manufacturing a package body, a pre-cutting process of the glass substrate is achieved, providing a cutting path with more uniform stress distribution, and effectively solving the problem of microcracks generated when manufacturing a semiconductor chip monomer with a glass substrate, thereby improving the structural integrity and reliability of the semiconductor chip monomer.
[0008] The method for manufacturing a semiconductor chip without microcracks, wherein the method for manufacturing a semiconductor chip without microcracks further includes a step performed between steps S2 and S3: Fill all cutway windows with cushioning material.
[0009] The method for manufacturing a semiconductor chip without microcracks of the present application can effectively solve the adverse effects that the cutting path window may have on the functional layer by filling the buffer material in the cutting path window through step SA, so as to improve the overall quality and reliability of the semiconductor chip monomer, reduce the generation of microcracks, thereby improving the yield and performance stability of the semiconductor chip monomer, and fill and repair the microcracks generated when forming the cutting path window.
[0010] In the method for manufacturing a semiconductor chip without microcracks, the filling material includes one of resin, ABF, and PI.
[0011] The method for manufacturing a semiconductor chip without microcracks of the present application uses resin, ABF or PI as filling materials. These materials have good buffering properties and elasticity and can effectively absorb the stress and vibration generated during the cutting process.
[0012] In the method for manufacturing a semiconductor chip without microcracks, the cutting reference lines are distributed in a grid, and the four side lines of the grid in each of the cutting reference lines correspond to at least one long strip cutting path window.
[0013] In the method for manufacturing a semiconductor chip without microcracks, the cutting reference lines are distributed in a grid, and the four edges of the grid in each of the cutting reference lines correspond to a plurality of equidistant arrays of dot-shaped cutting path windows.
[0014] The method for manufacturing a semiconductor chip without microcracks, wherein step S2 comprises: S21, forming a plurality of cutting path windows on the glass substrate by laser cutting or chemical etching.
[0015] The method for manufacturing a semiconductor chip without microcracks, wherein step S2 comprises: S21', forming a modified layer on the glass substrate by laser modification, and removing the modified layer by chemical etching to form a plurality of cutting path windows on the glass substrate.
[0016] The method for manufacturing a semiconductor chip without microcracks, wherein the method for manufacturing a semiconductor chip without microcracks further comprises the following steps which are performed synchronously with step S2: S2', forming a plurality of through-glass holes on the glass substrate.
[0017] In the method for manufacturing a semiconductor chip without microcracks, the functional layer at least includes: a transistor layer, an interconnection layer and an insulating layer.
[0018] In the method for manufacturing a semiconductor chip without microcracks, step S4 is performed by cutting based on laser cutting, mechanical cutting or wire cutting.
[0019] In summary, the present application provides a method for manufacturing semiconductor chips without microcracks. The method effectively solves the problem of microcracks generated when manufacturing semiconductor chip monomers with a glass substrate by pre-forming a cutting path window on a glass substrate and filling a buffer material in the cutting path window. The method changes the traditional direct cutting method, realizes pre-cutting treatment of the glass substrate, and provides a cutting path with a more uniform stress distribution, which effectively solves the problem of microcracks generated when manufacturing semiconductor chip monomers with a glass substrate, thereby improving the structural integrity and reliability of the semiconductor chip monomer. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 A flow chart of a method for manufacturing a semiconductor chip without microcracks provided in some embodiments of the present application.
[0021] Figure 2 A flow chart of a method for manufacturing a semiconductor chip without microcracks provided in some other embodiments of the present application.
[0022] Figure 3 A flow chart of a method for manufacturing a semiconductor chip without microcracks provided in some other embodiments of the present application.
[0023] Figure 4 FIG. 1 is a schematic top view of a partial glass substrate after forming cutting street windows in some embodiments.
[0024] Figure 5 Schematic diagram of a top view of a partial glass substrate after forming cutting street windows in some other embodiments. DETAILED DESCRIPTION
[0025] The embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.
[0026] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.
[0027] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0028] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.
[0029] The disclosure below provides many different embodiments or examples to realize different structures of the present invention. In order to simplify the disclosure of the present invention, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplicity and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides various specific examples of processes and materials, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.
[0030] First, please refer to Figure 1 Some embodiments of the present application provide a method for manufacturing a semiconductor chip without microcracks, which is used to manufacture a semiconductor chip monomer having a glass substrate. The method for manufacturing a semiconductor chip without microcracks comprises the following steps: S1. Prepare a glass substrate; S2, forming a plurality of cutting path windows on the glass substrate, wherein the plurality of cutting path windows are evenly distributed on the glass substrate along a cutting reference line; S3, forming a functional layer on a glass substrate to obtain a package; S4, cutting the package body along the cutting reference line to obtain a plurality of semiconductor chip monomers.
[0031] Specifically, in order to avoid the generation of microcracks when manufacturing a semiconductor chip monomer with a glass substrate, an embodiment of the present application proposes a method for manufacturing a semiconductor chip without microcracks. The method solves the problem of microcracks by pre-forming a cutting path window on a glass substrate. The cutting path windows are evenly distributed along a cutting reference line. The distribution of the cutting path windows corresponds to the distribution of the cutting reference line. The cutting reference line provides a preset path for subsequent cutting. This method of pre-fabricating cutting path windows can reduce stress concentration during the cutting process, thereby reducing the risk of microcrack formation.
[0032] More specifically, the cutting reference line is a reference line used for cutting the package, that is, after cutting the package based on the cutting reference line in step S4, a plurality of semiconductor chip monomers meeting the expected size can be obtained, so the cutting reference line belongs to the preset path of the cutting behavior in step S4; the cutting path windows formed in step S2 of the method for manufacturing a semiconductor chip without microcracks in the embodiment of the present application are evenly distributed along the cutting reference line, and the cutting path windows can be openings or blind holes that completely penetrate the glass substrate, which is equivalent to pre-cutting the glass substrate. The pre-cutting behavior can effectively reduce the stress concentration in the cutting process of step S4, thereby reducing the risk of microcrack formation; secondly, the cutting path windows evenly distributed on the cutting reference line can ensure the structural stability of the glass substrate, and ensure that step S3 can smoothly manufacture the package based on the glass substrate.
[0033] More specifically, the process of manufacturing the package body in step S3 is a conventional process, and different manufacturing process flows can be configured according to different package body structures, so it will not be described in detail here.
[0034] More specifically, in the process of cutting the package along the cutting reference line, since the cutting path window already exists on the glass substrate of the package, the stress transfer and distribution during the cutting process are more uniform, effectively avoiding micro cracks at the edge of the chip.
[0035] More specifically, this method changes the traditional direct cutting method by pre-processing the glass substrate before cutting, effectively solving the problem that glass substrate semiconductor chips are prone to microcracks during the cutting process. The cutting path window formed in step S2 plays a role in stress release, thereby improving the structural integrity and reliability of the semiconductor chip unit.
[0036] The method for manufacturing a semiconductor chip without microcracks in the embodiment of the present application changes the traditional direct cutting method. By forming multiple cutting path windows on the glass substrate before manufacturing the package body, the glass substrate is pre-cut, providing a cutting path with more uniform stress distribution, and effectively solving the problem of microcracks generated when manufacturing a semiconductor chip monomer with a glass substrate, thereby improving the structural integrity and reliability of the semiconductor chip monomer.
[0037] In some preferred embodiments, Figure 2 As shown, the method for manufacturing a semiconductor chip without microcracks further includes a step performed between step S2 and step S3: SA. Fill all cutting path windows with buffer material.
[0038] Specifically, after the cutting path window is formed and before the functional layer is produced, filling the cutting path window with buffer material is a key step. The main functions of this step are: 1. Protecting the cutting path window to prevent possible material infiltration or contamination during the subsequent production of the functional layer, ensuring smooth production of the functional layer; providing a smooth surface. After filling the buffer material, a smoother surface can be provided for the subsequent production of the functional layer, which is beneficial to improving the quality and uniformity of the functional layer; 2. Reducing stress. The buffer material can absorb and disperse stress to a certain extent, reducing the stress impact of the cutting path window on the surrounding area, thereby reducing the risk of microcracks; 3. Enhancing structural stability. Filling the buffer material can enhance the stability of the overall structure and provide better support in subsequent processing; 4. Repairing microcracks: Fill and repair the microcracks generated when the cutting path window is formed, which solves most of the edge microcrack problems.
[0039] More specifically, the method for manufacturing a semiconductor chip without microcracks in the embodiment of the present application can effectively solve the adverse effects that the cutting path window may have on the functional layer by filling the buffer material in the cutting path window through step SA, so as to improve the overall quality and reliability of the semiconductor chip unit, reduce the generation of microcracks, thereby improving the yield and performance stability of the semiconductor chip unit, and fill and repair the microcracks generated when forming the cutting path window.
[0040] In some preferred embodiments, the filling material includes one of resin, ABF, PI and other filling materials.
[0041] Specifically, the method for manufacturing a semiconductor chip without microcracks in the embodiment of the present application uses resin, ABF or PI as filling materials. These materials have good buffering properties and elasticity and can effectively absorb the stress and vibration generated during the cutting process.
[0042] More specifically, resin materials have good fluidity and filling properties, and can well fill the gaps in the cutting path window. ABF (Ajinomoto Build-up Film) is a high-performance insulating material with excellent heat resistance and mechanical strength. PI (polyimide) has excellent high temperature resistance and chemical stability. All three materials can play a buffering role in the cutting process, reduce stress concentration, and thus reduce the risk of microcracks; in addition, these materials can fill and repair the microcracks generated when forming the cutting path window, thus solving most of the edge microcrack problems.
[0043] More specifically, in the embodiment of the present application, the filling material is preferably PI.
[0044] In some preferred embodiments, the cutting reference lines are distributed in a grid, such as Figure 4 As shown, the four side lines of the grid in each cutting reference line at least correspond to forming a long strip cutting path window.
[0045] Specifically, Figure 4 As shown, the dotted lines in the figure are cutting reference lines, which include multiple staggered longitudinal reference lines and transverse reference lines, and these longitudinal reference lines and transverse reference lines form multiple areas for distinguishing the positions of each semiconductor chip monomer; in this embodiment, before executing the cutting behavior of step S4, there is at least one long strip cutting road window around the position corresponding to each semiconductor chip monomer in the package for separation.
[0046] More specifically, the method for manufacturing a semiconductor chip without microcracks in the embodiment of the present application can effectively disperse the stress generated during the cutting process and reduce the risk of microcrack formation by forming long cutting road windows on the four sides of the grid. The cutting road windows that match the grid-shaped distributed cutting reference lines can ensure the straightness and verticality of subsequent cutting actions, improve cutting accuracy, and ensure uniform stress distribution when cutting to obtain semiconductor chip monomers, and the processing quality of each edge is consistent and crack-free.
[0047] More specifically, the design of the long strip cutting lane windows allows the number and size of the windows to be adjusted according to actual needs to accommodate different chip sizes and cutting requirements.
[0048] It should be noted that the length direction of the long strip cutting path window is parallel to the longitudinal reference line or the transverse reference line where the long strip cutting path window is located.
[0049] In some other embodiments, the cutting reference lines are distributed in a grid, such as Figure 5 As shown, the four side lines of the grid in each cutting reference line correspond to a plurality of equally spaced arrays of dot-shaped cutting path windows.
[0050] Specifically, Figure 5 As shown, the dot-dashed line in the figure is the cutting reference line; in this embodiment, before executing the cutting behavior of step S4, the surroundings of the locations corresponding to each semiconductor chip monomer in the package body are separated by a plurality of equidistant arrays of dot-shaped cutting road windows.
[0051] More specifically, the method for manufacturing a semiconductor chip without microcracks in an embodiment of the present application can provide sufficient guidance for cutting by forming a plurality of equidistant arrays of dot-shaped cutting road windows on the four sides of the grid, thereby reducing stress concentration during the cutting process and thus reducing the risk of microcracks. Compared with the long strip-shaped cutting road windows, the dot-shaped cutting road windows can further reduce stress concentration, which is beneficial to preventing the generation and expansion of microcracks. The design of an equidistant array of multiple cutting road windows can ensure stability and consistency during the cutting process, which helps to improve the yield rate of semiconductor chips.
[0052] In some preferred embodiments, step S2 comprises: S21, forming a plurality of cutting path windows on the glass substrate by laser cutting or chemical etching.
[0053] Specifically, step S21 is actually a cutting behavior performed based on the distribution of the cutting reference line and the shape of the cutting road window, so that the corresponding cutting road windows can be evenly distributed on the cutting reference line and the shape meets the expected requirements.
[0054] More specifically, the method for manufacturing a semiconductor chip without microcracks in an embodiment of the present application can form multiple cutting path windows on a glass substrate by laser cutting or chemical etching. These processing methods can accurately control the shape and size of the cutting path windows, which helps to reduce the stress concentration generated in the subsequent cutting process, thereby reducing the probability of microcracks. Laser cutting has the advantages of high precision and non-contact, and can form clear and smooth cutting path windows on a glass substrate. Chemical etching can form a cutting path window with a specific shape and depth by selectively dissolving the glass material.
[0055] In some more preferred embodiments, step S2 comprises: S21', forming a modified layer on the glass substrate by laser modification, and removing the modified layer by chemical etching to form a plurality of cutting path windows on the glass substrate.
[0056] Specifically, step S21 ′ is actually a cutting action performed based on the distribution of the cutting reference line and the shape of the cutting road window, so that the corresponding cutting road windows can be evenly distributed on the cutting reference line and the shape meets the expected requirements.
[0057] More specifically, the method for manufacturing a microcrack-free semiconductor chip in an embodiment of the present application adopts a two-step process to form a cutting path window; first, a modified layer is formed on the glass substrate through laser modification treatment, and the laser modification treatment can accurately control the position and size of the modified area, so that the subsequently formed cutting path window is more precise; secondly, the modified layer is removed through chemical etching treatment, and chemical etching can selectively remove the modified layer without causing damage to the unmodified glass substrate, thereby forming the required cutting path window.
[0058] More specifically, this two-step processing method can better control the shape and quality of the cutting path window compared to directly using methods such as laser cutting or chemical etching. The laser modification process can produce microstructural changes inside the glass substrate without causing obvious damage to the surface, and the subsequent chemical etching process can smoothly remove the modified layer to form a smooth cutting path window edge. This method can effectively reduce the stress concentration generated during the cutting process, thereby reducing the risk of microcracks; secondly, after the preliminary modification based on the laser, the chemical etching process can repair the microcracks caused by the laser modification, so that there are almost no microcracks in the process of forming the cutting path window, which helps to accurately cut along the cutting reference line in the final cutting step to obtain a semiconductor chip monomer without microcracks.
[0059] In some preferred embodiments, Figure 3 As shown, the method for manufacturing a semiconductor chip without microcracks further includes the following steps which are performed synchronously with step S2: SB. A plurality of through-glass holes are formed on the glass substrate.
[0060] Specifically, the manufacturing process of semiconductor chip monomers often requires the production of glass through holes to achieve device bonding or to produce a redistribution layer, so it is necessary to produce glass through holes; in the process of manufacturing a semiconductor chip without microcracks, the step of forming multiple glass through holes is performed simultaneously with the step of forming a cutting path window on a glass substrate, and the formation of the cutting path window and the glass through hole can be achieved on the glass substrate at the same time, thereby improving production efficiency; this method reduces the step of separately forming glass through holes by optimizing the process flow, reduces production costs, and improves the overall quality and reliability of the chip.
[0061] More specifically, step S2 and step S2' are preferably performed using the same processing means, such as laser modification processing and chemical etching processing to form cutting street windows and glass through holes, so as to improve the consistency and processing efficiency of product processing.
[0062] In some preferred embodiments, the functional layer includes at least: a transistor layer, an interconnect layer and an insulating layer.
[0063] Specifically, the transistor layer, interconnect layer and insulation layer in the functional layer play different roles in the semiconductor chip. The transistor layer is responsible for realizing the basic electronic functions of the chip, the interconnect layer is used to connect different circuit parts, and the insulation layer is used to isolate different circuit areas to prevent electrical interference. The combination of these layers ensures the functional integrity and performance stability of the semiconductor chip.
[0064] More specifically, the functional layer can be formed by metallization and patterning, organic dielectric layer lamination, solder resist ink and surface anti-oxidation treatment.
[0065] In some preferred embodiments, step S4 is performed by cutting based on laser cutting, mechanical cutting or wire cutting.
[0066] Specifically, laser cutting uses a high-energy laser beam to cut, which can achieve high precision and low heat-affected zone; mechanical cutting uses a precise mechanical knife or resin knife to cut, which can control the cutting force and cutting path; wire cutting uses electric spark discharge machining, which is suitable for precision cutting of high-hardness materials. These cutting methods each have their own advantages. By choosing the appropriate cutting method, the cutting accuracy can be improved, thereby improving the quality and reliability of semiconductor chips.
[0067] In summary, the embodiments of the present application provide a method for manufacturing a semiconductor chip without microcracks. The method effectively solves the problem of microcracks generated when manufacturing a semiconductor chip monomer with a glass substrate by pre-forming a cutting path window on a glass substrate and filling a buffer material in the cutting path window. The method changes the traditional direct cutting method, realizes pre-cutting of the glass substrate, and provides a cutting path with a more uniform stress distribution, which effectively solves the problem of microcracks generated when manufacturing a semiconductor chip monomer with a glass substrate, thereby improving the structural integrity and reliability of the semiconductor chip monomer.
[0068] In the description of this specification, the description with reference to the terms "one embodiment", "certain embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.
[0069] The above are only some embodiments of the present invention. For those skilled in the art, several modifications and improvements can be made without departing from the creative concept of the present invention, which all belong to the protection scope of the present invention.
Claims
1. A method for manufacturing a semiconductor chip without microcracks, for manufacturing a semiconductor chip monomer having a glass substrate, characterized in that: The method for manufacturing a semiconductor chip without microcracks comprises the following steps: S1. Prepare a glass substrate; S2, forming a plurality of cutting path windows on the glass substrate, wherein the plurality of cutting path windows are evenly distributed on the glass substrate along a cutting reference line; S3, manufacturing a functional layer on the glass substrate to obtain a package; S4, cutting the package body along the cutting reference line to obtain a plurality of semiconductor chip units.
2. The method for manufacturing a semiconductor chip without microcracks according to claim 1, characterized in that: The method for manufacturing a semiconductor chip without microcracks further includes a step performed between steps S2 and S3: Fill all cutway windows with cushioning material.
3. The method for manufacturing a semiconductor chip without microcracks according to claim 2, characterized in that: The filling material includes one of resin, ABF and PI.
4. The method for manufacturing a semiconductor chip without microcracks according to claim 1, characterized in that: The cutting reference lines are distributed in a grid, and the four side lines of the grid in each of the cutting reference lines at least correspond to forming a long strip cutting path window.
5. The method for manufacturing a semiconductor chip without microcracks according to claim 1, characterized in that: The cutting reference lines are distributed in a grid, and the four side lines of the grid in each of the cutting reference lines correspond to a plurality of equally spaced arrays of dot-shaped cutting path windows.
6. The method for manufacturing a semiconductor chip without microcracks according to claim 1, characterized in that: Step S2 includes: S21, forming a plurality of cutting path windows on the glass substrate by laser cutting or chemical etching.
7. The method for manufacturing a semiconductor chip without microcracks according to claim 1, characterized in that: Step S2 includes: S21', forming a modified layer on the glass substrate by laser modification, and removing the modified layer by chemical etching to form a plurality of cutting path windows on the glass substrate.
8. The method for manufacturing a semiconductor chip without microcracks according to claim 1, characterized in that: The method for manufacturing a semiconductor chip without microcracks further includes the following steps which are performed simultaneously with step S2: S2', forming a plurality of through-glass holes on the glass substrate.
9. The method for manufacturing a semiconductor chip without microcracks according to claim 1, characterized in that: The functional layer includes at least: a transistor layer, an interconnect layer and an insulating layer.
10. The method for manufacturing a semiconductor chip without microcracks according to claim 1, characterized in that: Step S4 is to perform cutting based on laser cutting, mechanical cutting or wire cutting.