Wafer photoresist removing device and method

Abstract

The embodiment of the invention provides a wafer photoresist removing device and method, and relates to the technical field of semiconductors, and the device comprises a groove body which is used for placing a liquid medium, and the liquid medium is used for removing a photoresist layer on the surface of a wafer; the clamp is arranged in the groove body and is used for placing a wafer to be degummed, so that the wafer to be degummed is soaked in the liquid medium; the heating pad is arranged on the outer side of the bottom of the tank body and is used for heating the liquid medium; and the ultrasonic device is arranged on the outer side of the side wall of the groove body and is used for transmitting ultrasonic energy to the liquid medium, so that the adhesive layer on the surface of the wafer to be degummed is removed under the combined action of the liquid medium, the heat energy and the ultrasonic energy. According to the scheme, the glue layer on the surface of the wafer to be degummed is removed under the combined action of the liquid medium, the heat energy and the ultrasonic energy, the removal efficiency of the glue on the surface of the wafer is improved, and the wafer processing rate is increased.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a wafer degumming device and method. Background Art

[0002] In the semiconductor process, debonding is a crucial step. The purpose of debonding is to remove the excess glue layer on the surface of the wafer so that the wafer can enter the next process in a clean state.

[0003] At present, there are two main methods of degumming in the semiconductor industry: 1. Wet debonding: The adhesive layer on the wafer surface has a strong adhesion to the wafer surface, and the adhesive layer is not easy to fall off. Therefore, the wafer with the adhesive layer is placed in an organic solvent to soak it to soften, dissolve or decompose the adhesive layer on the wafer surface. However, this method usually has a long cycle and a low rate. 2. Dry debonding: This method is mainly plasma debonding, which usually removes the glue layer by reacting oxygen nuclei with the glue layer in a plasma environment. The oxygen atoms react chemically with the glue layer to generate carbon monoxide, carbon dioxide and water. The generated gas is pumped away, thereby completing the removal of the glue layer on the wafer surface. However, this method is currently relatively expensive. Summary of the invention

[0004] In view of this, an embodiment of the present invention provides a wafer degumming device to solve the technical problem of low degumming efficiency in the prior art wet degumming. The device comprises: The tank body 1 is used to place a liquid medium, and the liquid medium is used to remove the glue layer on the surface of the wafer; A fixture 2 is arranged in the tank body 1 and is used to place the wafer 0 to be debonded so that the wafer 0 to be debonded is immersed in the liquid medium; A heating pad 4 is placed on the outside of the bottom of the tank body 1 and is used to heat the liquid medium; The ultrasonic device 3 is placed on the outer side of the side wall of the trough body 1 and is used to transmit ultrasonic energy to the liquid medium, so that the glue layer on the surface of the wafer 0 to be debonded is removed under the combined action of the liquid medium, thermal energy and ultrasonic energy.

[0005] The embodiment of the present invention also provides a wafer degumming method to solve the technical problem of low degumming efficiency in the prior art wet degumming. The method comprises: A liquid medium is placed in the tank, and the liquid medium is used to remove the glue layer on the surface of the wafer; Placing the wafer to be debonded on a fixture in the tank body so that the wafer to be debonded is immersed in the liquid medium; Heating the liquid medium by a heating pad disposed on the outer side of the bottom of the tank; Ultrasonic energy is transmitted to the liquid medium by an ultrasonic device disposed outside the side wall of the tank body, and the adhesive layer on the surface of the wafer to be debonded is removed under the combined action of the liquid medium, thermal energy and ultrasonic energy.

[0006] Compared with the prior art, at least one of the above-mentioned technical solutions adopted in the embodiments of this specification can achieve beneficial effects that include at least: it is proposed to place a liquid medium in the trough body 1, and to set a heating pad on the outer side of the bottom of the trough body 1 to heat the liquid medium. At the same time, an ultrasonic device 3 is set on the outer side of the side wall of the trough body 1 to transmit ultrasonic energy to the liquid medium. After the wafer 0 to be debonded is placed on the clamp 2 in the trough body 1, the wafer 0 to be debonded is immersed in the liquid medium, so that the liquid medium, heat energy and ultrasonic energy (ultrasonic oscillation) work together to remove the glue layer on the surface of the wafer 0 to be debonded, which is beneficial to improve the efficiency of removing the colloid on the wafer surface and improve the wafer processing rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0008] Figure 1 It is a structural schematic diagram of a wafer degumming device provided by an embodiment of the present invention; Figure 2 It is a structural schematic diagram of a wafer degumming device including a float level gauge provided by an embodiment of the present invention; Figure 3 is a schematic structural diagram of the bottom of a tank body provided by an embodiment of the present invention; Figure 4 It is a flow chart of a wafer degumming method provided by an embodiment of the present invention.

[0009] Reference numerals: 0. Wafer to be debonded; 1. Trough; 2. Clamp; 3. Ultrasonic device; 4. Heating pad; 5. First float level gauge; 6. Second float level gauge; 7. Third float level gauge; 8. Overflow pipe; 9. Drain port; 10. Reserved interface; 11. Thermocouple; 12. Bottom surface; 301. Ultrasonic transducer; 302. Ultrasonic generator; 303. Isolation cover; 304. Cover plate. DETAILED DESCRIPTION

[0010] The embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0011] The following describes the implementation methods of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The present application can also be implemented or applied through other different specific implementation methods, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that, in the absence of conflict, the following embodiments and the features in the embodiments can be combined with each other. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without making creative work belong to the scope of protection of the present application.

[0012] In an embodiment of the present invention, a wafer degumming device is provided, such as Figure 1 , Figure 3 As shown, the device comprises: The tank body 1 is used to place a liquid medium, and the liquid medium is used to remove the glue layer on the surface of the wafer; A fixture 2 is arranged in the tank body 1 and is used to place the wafer 0 to be debonded so that the wafer 0 to be debonded is immersed in the liquid medium; A heating pad 4 is placed on the outside of the bottom of the tank body 1 and is used to heat the liquid medium; The ultrasonic device 3 is placed on the outer side of the side wall of the trough body 1 and is used to transmit ultrasonic energy to the liquid medium, so that the glue layer on the surface of the wafer 0 to be debonded is removed under the combined action of the liquid medium, thermal energy and ultrasonic energy.

[0013] Depend on Figure 1 As shown, in an embodiment of the present invention, it is proposed to place a liquid medium in a trough body 1, and to set a heating pad on the outer side of the bottom of the trough body 1 to heat the liquid medium. At the same time, an ultrasonic device 3 is set on the outer side of the side wall of the trough body 1 to transmit ultrasonic energy to the liquid medium. After the wafer 0 to be debonded is placed on the clamp 2 in the trough body 1, the wafer 0 to be debonded is immersed in the liquid medium, so that the glue layer on the surface of the wafer 0 to be debonded is removed under the triple action of the liquid medium, the heat energy and the ultrasonic energy, which is beneficial to improve the efficiency of removing the colloid on the wafer surface and improve the wafer processing rate.

[0014] During specific implementation, the tank body 1 may be made of metal.

[0015] In specific implementation, the ultrasonic device 3 can be any device or equipment that can output ultrasonic energy. In order to easily output ultrasonic energy, Figure 1 As shown, it is proposed that the ultrasonic device 3 includes: An ultrasonic transducer 301 is arranged on the outer side of the side wall of the tank body 1 and is used to transmit ultrasonic energy to the liquid medium; The ultrasonic generator 302 is connected to the ultrasonic transducer 301 via a cable, and is used to drive the ultrasonic transducer 301 .

[0016] In specific implementation, after the ultrasonic generator 302 is powered on, the start and stop of the ultrasonic transducer and the frequency and power adjustment can be controlled through the operation panel of the ultrasonic generator 302, and can also be remotely transmitted to the host computer for start and stop control. The power supply of the ultrasonic generator 302 is 220V~50Hz.

[0017] In a specific implementation, in order to achieve uniform and omnidirectional transmission of ultrasonic energy to the liquid medium, it is proposed that the number of the ultrasonic transducers 301 is multiple and uniformly arranged on the outer side of the side wall of the tank body 1.

[0018] When implementing it, Figure 1 As shown, the tank body 1 can be an octagonal structure, and the ultrasonic transducers 301 are evenly arranged on four mutually spaced outer sides of the tank body 1 (that is, there is an outer side surface without ultrasonic transducer 301 between every two outer side surfaces with ultrasonic transducers 301), and four ultrasonic transducers 301 can be arranged on each of the four mutually spaced outer side surfaces, that is, 16 ultrasonic transducers 301 can be installed on the entire tank body 1.

[0019] In specific implementation, the plurality of ultrasonic transducers 301 support batch operation, intermittent operation or simultaneous operation, and can adapt to different process conditions. For example, taking 16 ultrasonic transducers 301 as an example, for the four mutually spaced outer side surfaces on which the ultrasonic transducers 301 are set, the ultrasonic transducers 301 on every two or more outer side surfaces can work in batches, intermittently or simultaneously, or any one or more of the 16 ultrasonic transducers 301 on the four mutually spaced outer side surfaces can work in batches, intermittently or simultaneously. For example, if one ultrasonic transducer 301 on each outer side surface works in the same batch at the same time, then the four ultrasonic transducers 301 on each outer side surface work in different batches respectively, such as the ultrasonic transducers 301 on the four outer side surfaces are numbered ABCD, EFGH, IJKL, MNOP respectively, and only one ultrasonic transducer 301 on each outer side surface is in working state at the same time, which can be AEIM working, or BFJN or / CGKO or / DHLP working.

[0020] In specific implementation, the working states of the plurality of ultrasonic transducers 301 such as batch operation, intermittent operation or simultaneous operation can be controlled by adding relays or software control devices to the wiring of the ultrasonic transducers 301 .

[0021] In a specific implementation, a plurality of the ultrasonic transducers 301 are connected in parallel to the ultrasonic generator 302. Specifically, each preset ultrasonic transducer 301 may lead out one positive and one negative wire, which are connected to the corresponding terminals of the ultrasonic generator. Taking 16 ultrasonic transducers 301 as an example, each 8 ultrasonic transducers 301 may lead out one positive and one negative wire, which are connected to the corresponding terminals of the ultrasonic generator.

[0022] In a specific implementation, in order to isolate and protect the ultrasonic transducer 301, as Figure 1 , Figure 3 As shown, it is proposed that the ultrasonic device 3 also includes: The isolation cover 303 is used to cover the ultrasonic transducer 301. The isolation cover 303 is provided with a detachable cover plate 304 to facilitate the maintenance of the ultrasonic transducer 301. When the cover plate 304 is covered, nitrogen is introduced through the reserved interface 10 on the isolation cover 303 to provide atmosphere protection for the ultrasonic transducer 301.

[0023] In specific implementation, in order to monitor the temperature of the liquid medium in the tank body 1 in real time, so that the temperature of the liquid medium can be controlled within a preset temperature range suitable for removing the glue layer, such as Figure 1 As shown, the above device also includes: Thermocouple 11 is arranged on the side wall of the tank body 1 and is used to monitor the temperature of the liquid medium. When the temperature of the liquid medium is monitored to be higher or lower than the preset temperature range, the working state of the heating pad 4 is controlled by a control component implemented in the form of hardware and / or software to control the start and stop of the heating pad 4, power change, etc.

[0024] In specific implementation, in order to ensure that the liquid level in the tank body 1 is always at a reasonable height, Figure 2 As shown, it is proposed that the above device also includes: The first float level gauge 5 is arranged at a first height inside the side wall of the tank body 1, and is used to monitor the minimum liquid level of the liquid medium; that is, the minimum liquid level of the liquid medium allowed for the wafer degumming device to work normally. If the first float level gauge 5 detects that the liquid level of the liquid medium is lower than the minimum liquid level, the control component is triggered to control the heating pad 4 not to heat; A second float level gauge 6 is provided at a second height inside the side wall of the tank body 1, and is used to monitor the working liquid level of the liquid medium; that is, to ensure that the wafer degumming device can work normally, the liquid medium needs to be kept within the working liquid level range, and the working liquid level range can be determined according to specific needs; The third float level gauge 7 is arranged at a third height on the inner side of the side wall of the tank body 1, and is used to monitor the maximum liquid level of the liquid medium, wherein the first height is less than the second height, and the second height is less than the third height; that is, the maximum liquid level of the liquid medium allowed for the normal operation of the wafer degumming device. If the third float level gauge 7 detects that the liquid level of the liquid medium is higher than the maximum liquid level, the liquid level of the liquid medium is higher than the orifice of the overflow pipe 8 at this time. It may be that the orifice of the overflow pipe 8 is blocked by foreign matter, so that the liquid medium cannot be discharged through the orifice of the overflow pipe 8 in time, resulting in an excessively high liquid level, and at this time, the wafer degumming device is triggered to power off or send out an alarm message; The overflow pipe 8 is used to discharge the liquid medium through the overflow pipe when the liquid level of the liquid medium is higher than the working liquid level, and the nozzle height of the overflow pipe is higher than the working liquid level and lower than the third height; for example, when the liquid medium is maintained within the working liquid level range, placing the wafer 0 to be debonded into the liquid medium will cause the liquid level to rise. At this time, the liquid level is higher than the working liquid level range and lower than the third height, and the liquid medium can be discharged through the overflow pipe 8 to ensure that the liquid level of the liquid medium is maintained within the working liquid level range.

[0025] During specific implementation, the size of the fixture 2 can support 2-12 inch wafers to improve equipment compatibility.

[0026] In a specific implementation, the heating pad 4 may be an electric heating pad, which heats the liquid medium after being powered on.

[0027] When implementing it, Figure 3 As shown, the bottom surface 12 of the tank body 1 is an inclined surface, and the discharge port 9 is arranged at the lowest position of the bottom surface 12 , which can ensure that the liquid in the tank body 1 can be completely emptied through the discharge port 9 .

[0028] In a specific implementation, the liquid medium may be any liquid used to remove the adhesive layer on the surface of the wafer, such as a chemical solution, an organic solvent, and the like.

[0029] Based on the same inventive concept, a wafer degumming method is also provided in the embodiment of the present invention, as described in the following embodiment. Since the principle of solving the problem by the wafer degumming method is similar to that of the wafer degumming device, the implementation of the wafer degumming method can refer to the implementation of the wafer degumming device, and the repeated parts will not be repeated.

[0030] Figure 4 Flow chart of the wafer degumming method according to an embodiment of the present invention. Figure 4As shown, the method includes: Step S401: placing a liquid medium in the tank, wherein the liquid medium is used to remove the adhesive layer on the surface of the wafer; Step S402: placing the wafer to be debonded on a fixture in the tank body so that the wafer to be debonded is immersed in the liquid medium; Step S403: heating the liquid medium by means of a heating pad disposed on the outer side of the bottom of the tank; Step S404: transmitting ultrasonic energy to the liquid medium through an ultrasonic device disposed outside the side wall of the tank body, and removing the adhesive layer on the surface of the wafer to be debonded under the combined action of the liquid medium, thermal energy and ultrasonic energy.

[0031] The embodiment of the present invention achieves the following technical effects: it proposes placing a liquid medium in a trough body 1, and arranging a heating pad on the outer side of the bottom of the trough body 1 to heat the liquid medium; at the same time, an ultrasonic device 3 is arranged on the outer side of the side wall of the trough body 1 to transmit ultrasonic energy to the liquid medium; after the wafer to be debonded is placed on the clamp 2 in the trough body 1, the wafer to be debonded is immersed in the liquid medium, so that the glue layer on the surface of the wafer to be debonded is removed under the triple action of the liquid medium, the heat energy and the ultrasonic energy, which is beneficial to improving the efficiency of removing the colloid on the wafer surface and improving the wafer processing rate.

[0032] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the embodiments of the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A wafer degumming device, characterized in that: include: A tank body (1) is used to place a liquid medium, wherein the liquid medium is used to remove a glue layer on the surface of the wafer; A clamp (2) is arranged in the tank body (1) and is used to place the wafer (0) to be debonded, so that the wafer (0) to be debonded is immersed in the liquid medium; A heating pad (4) is placed on the outside of the bottom of the tank (1) and is used to heat the liquid medium; An ultrasonic device (3) is disposed on the outer side of the side wall of the tank body (1) and is used to transmit ultrasonic energy to the liquid medium, so that the adhesive layer on the surface of the wafer (0) to be debonded is removed under the combined action of the liquid medium, thermal energy and ultrasonic energy.

2. The wafer debonding device according to claim 1, characterized in that: The ultrasonic device (3) comprises: An ultrasonic transducer (301) is arranged on the outside of the side wall of the tank body (1) and is used to transmit ultrasonic energy to the liquid medium; An ultrasonic generator (302) is connected to the ultrasonic transducer (301) via a cable and is used to drive the ultrasonic transducer (301).

3. The wafer degumming device according to claim 2, characterized in that: The ultrasonic transducers (301) are multiple in number and are evenly arranged on the outside of the side wall of the tank body (1).

4. The wafer debonding device according to claim 3, characterized in that: The tank body (1) is an octagonal structure, and the ultrasonic transducers (301) are evenly arranged on four mutually spaced outer sides of the tank body (1), with four ultrasonic transducers (301) being arranged on each of the outer sides.

5. The wafer debonding device as claimed in claim 3, characterized in that: The plurality of ultrasonic transducers (301) support batch operation, intermittent operation or simultaneous operation.

6. The wafer debonding device according to claim 3, characterized in that: The plurality of ultrasonic transducers (301) are connected in parallel to the ultrasonic generator (302).

7. The wafer debonding device according to claim 2, characterized in that: The ultrasonic device (3) further comprises: An isolation cover (303) is used to cover the ultrasonic transducer (301); the isolation cover (303) is provided with a detachable cover plate (304); when the cover plate (304) is covered, nitrogen is introduced through a reserved interface (10) on the isolation cover (303) to provide atmosphere protection for the ultrasonic transducer (301).

8. The wafer degumming device according to any one of claims 1 to 7, characterized in that: Also includes: A first float liquid level gauge (5), arranged at a first height inside the side wall of the tank body (1), and used for monitoring the lowest liquid level of the liquid medium; A second float liquid level gauge (6), arranged at a second height inside the side wall of the tank body (1), and used for monitoring the working liquid level of the liquid medium; a third float liquid level gauge (7), arranged at a third height on the inner side of the side wall of the tank body (1), and used to monitor the maximum liquid level of the liquid medium, wherein the first height is smaller than the second height, and the second height is smaller than the third height; An overflow pipe (8) is used to discharge the liquid medium through the overflow pipe when the liquid level of the liquid medium is higher than the working liquid level, and the pipe mouth of the overflow pipe is higher than the working liquid level and lower than the third height.

9. The wafer debonding device according to any one of claims 1 to 7, characterized in that: The bottom surface (12) of the tank body (1) is an inclined surface, and the discharge port (9) is arranged at the lowest position of the bottom surface (12).

10. A wafer debonding method, characterized in that: include: A liquid medium is placed in the tank, and the liquid medium is used to remove the glue layer on the surface of the wafer; Placing the wafer to be debonded on a fixture in the tank body so that the wafer to be debonded is immersed in the liquid medium; Heating the liquid medium by a heating pad disposed on the outer side of the bottom of the tank; Ultrasonic energy is transmitted to the liquid medium by an ultrasonic device disposed outside the side wall of the trough body, and the adhesive layer on the surface of the wafer to be debonded is removed under the joint action of the liquid medium, thermal energy and ultrasonic energy.

Images