Passive and passive trigger pulse generation circuit

Abstract

The invention relates to a passive and passive trigger pulse generation circuit. The circuit comprises a charging loop and a discharging loop, the charging loop charges the energy storage capacitor; the discharge loop comprises a voltage sensitive component, after the voltage at the two ends of the energy storage capacitor reaches the set voltage value of the voltage sensitive component, the energy storage capacitor discharges through the discharge loop, and the power pulse is loaded to the load to form the power pulse. A control mode of a power pulse and a circuit topological structure principle are innovated, a passive mode is adopted, passive triggering is carried out, and the voltage of a power source is utilized (high voltage can be directly used for charging an energy storage capacitor without being converted into low voltage to charge the energy storage capacitor) to be matched with the characteristic of a passive voltage sensitive component (generally used for circuit protection traditionally); and outputting a power pulse signal.

Description

Technical Field

[0001] The invention relates to a pulse generator, in particular to a passive, sourceless triggered pulse generating circuit. Background Art

[0002] Power pulse generation technology is widely used in many fields such as high-energy physics, industrial processing, medical treatment, radar communication and electromagnetic pulse weapons. With the continuous advancement of technology, a variety of power pulse generation methods have emerged, including pulse forming line method, pulse compression method, field flux compression method, etc., which can generate power pulses.

[0003] The generation of power pulses also requires corresponding triggering methods. Commonly used triggering methods are as follows: mechanical triggering, using switches with mechanical contacts such as relays or reed switches to transmit pulse signals to the target load; solid-state switch triggering, using IGBT, MOSFET, and thyristor trigger (SCR) as trigger carriers to control the generation of power pulses by quickly switching on and off the control signal. Among them, semiconductor switching technology is currently the most commonly used pulse control solution and is very popular in various applications. It requires direct control of the generation and release of high-voltage pulses through external switches or circuit logic, that is, using a low-voltage signal as a trigger signal. After the controlled unit works, a high-voltage pulse is output. This method has fast switching speed, short response time, stable pulse timing, and it is relatively easy to control low-voltage pulse signals. Regardless of the method, the pulse triggering method relies more on active control signals. Such as Figure 1 shown.

[0004] Under existing technical conditions, the technology for realizing short pulse triggering of solid-state switch tubes is relatively complex and has many influencing factors. The following difficulties need to be solved: 1) Parasitic capacitance effect: Parasitic capacitance inside the switch tube and in its package (such as gate-source capacitance Cgs, gate-drain capacitance Cgd and drain-source capacitance Cds) will limit its switching speed. During the switching process, these capacitors need to be charged and discharged, resulting in switching delays and energy loss.

[0005] 2) Gate drive capability: The switching speed is directly affected by the gate drive circuit capability. If the drive circuit cannot provide enough current to quickly charge and discharge the gate capacitance, the switching time will be prolonged, affecting the overall performance.

[0006] 3) Thermal effect: If the heat generated during high-speed switching cannot be dissipated in time, the junction temperature of the MOS tube will increase, thereby affecting its performance stability and even causing permanent damage.

[0007] 4) Switching noise: During high-speed switching, the rapid changes in current and voltage will generate electromagnetic interference (EMI) and radio frequency interference (RFI), which may have an adverse effect on other circuit parts.

[0008] 5) Changes in threshold voltage: The threshold voltage (Vth) of the switch tube is affected by factors such as process parameters and temperature changes. Even a slight change may significantly affect the switching characteristics and increase the complexity of the design. Summary of the invention

[0009] The invention provides a passive, sourceless triggered pulse generating circuit.

[0010] The technical solution of the present invention: A passive, passively triggered pulse generating circuit, the circuit comprising a charging circuit and a discharging circuit; the charging circuit charges an energy storage capacitor; the discharging circuit comprises a voltage sensitive component, after the voltage across the energy storage capacitor reaches the set voltage value of the voltage sensitive component, the energy storage capacitor discharges through the discharging circuit and loads a power pulse onto a load to form a power pulse.

[0011] The above technical solution is further refined, the charging circuit is composed of a high-voltage power supply, an energy storage capacitor, a diode or a discharge load; the discharge circuit is composed of an energy storage capacitor, voltage-sensitive components, a current-limiting resistor, and a discharge load; the diode is connected in parallel with the discharge load.

[0012] The above technical solution is further refined, the charging circuit is composed of a high-voltage power supply, an energy storage resistor, and a current limiting resistor; the discharging circuit is composed of an energy storage capacitor, voltage-sensitive components, a current limiting resistor, and a discharge load.

[0013] The above technical solution is further refined, and the voltage sensitive component is a ceramic gas discharge tube or a glass discharge tube or a semiconductor discharge tube.

[0014] The advantages of the present invention are reasonable design and ingenious conception. It innovates the control method of power pulses and the principle of circuit topology structure, adopts a passive method and passive triggering, and uses the voltage of the power source itself (high voltage can be directly used to charge the energy storage capacitor without converting it into low voltage to charge the energy storage capacitor) in combination with the characteristics of passive voltage-sensitive components (traditionally used for circuit protection) to output power pulse signals. It does not require complex switch signal control circuits, does not need to consider various parasitic parameters, has the ability to turn on quickly, and the switch is resistive on-off, the on-off current is relatively high, and there is no need to consider thermal effects. The system design is simple and reliable, and is suitable for product miniaturization design. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a commonly used power pulse control method.

[0016] Figure 2 It is a passive, passively triggered pulse generating circuit topology (Example 1).

[0017] Figure 3 It is a passive, passively triggered pulse generating circuit topology (Example 2). DETAILED DESCRIPTION Example

[0018] like Figure 1 As shown, a passive, passively triggered pulse generating circuit, wherein a high voltage power supply, an energy storage capacitor C1, a diode D1 and a discharge load Z1 constitute a charging circuit; an energy storage capacitor C1, a voltage sensitive component SW1, a current limiting resistor R1 and a discharge load Z1 constitute a discharge circuit; The (DC) high-voltage power supply output voltage is U1, the trigger voltage of the voltage-sensitive component SW1 is USW, and the voltage across the energy storage capacitor C1 is UC (initially zero). After the high-voltage power supply is turned on, the energy storage capacitor C1 is charged through the diode D1 or the discharge load Z1. When UC is greater than USW, the voltage-sensitive component SW1 is broken down and turned on. After the conduction, the voltage across the voltage-sensitive component SW1 is approximately short-circuited. Since the current-limiting resistor R1 is mainly used for current limiting, the voltage across the energy storage capacitor C1 is mainly loaded on the discharge load Z1, and a fast-on and off power pulse is generated across the discharge load Z1. When the voltage across the energy storage capacitor C1 is consumed to the turn-off voltage of the voltage-sensitive component SW1, the high-voltage power supply continues to charge the energy storage capacitor C1, and then continues to generate power pulses in the above manner. Example

[0019] like Figure 2 As shown, a passive, passively triggered pulse generating circuit, wherein: a high voltage power supply, an energy storage capacitor C1, and a current limiting resistor R1 form a charging circuit, and an energy storage capacitor C1, a current limiting resistor R1, a discharge load Z1, and a voltage sensitive component SW1 form a discharge circuit; The (DC) high-voltage power supply output voltage is U1, the trigger voltage of the voltage-sensitive component SW1 is USW, and the voltage across the energy storage capacitor C1 is UC (initially zero). After the high-voltage power supply is turned on, the energy storage capacitor C1 is charged through the current limiting resistor R1. When UC is greater than USW, the voltage-sensitive component SW1 is broken down and turned on. After the conduction, the voltage across the voltage-sensitive component SW1 is approximately short-circuited. Since the current limiting resistor R1 is mainly used for current limiting, the voltage across the energy storage capacitor C1 is mainly loaded on the discharge load Z1, and a fast on-off power pulse is generated across the discharge load Z1. When the voltage across the energy storage capacitor C1 is consumed to the turn-off voltage of the voltage-sensitive component SW1, the high-voltage power supply continues to charge the energy storage capacitor C1, and then continues to generate power pulses in the above manner.

[0020] The above are only preferred embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the invention. Therefore, the protection scope of the present invention should be based on the protection scope defined by the claims.

Claims

1. A passive, passively triggered pulse generating circuit, characterized in that: The circuit includes a charging circuit and a discharging circuit; The charging circuit charges the energy storage capacitor; The discharge circuit includes a voltage-sensitive component. After the voltage across the energy storage capacitor reaches a set voltage value of the voltage-sensitive component, the energy storage capacitor discharges through the discharge circuit and loads a power pulse onto the load to form a power pulse.

2. A passive, passively triggered pulse generating circuit according to claim 1, characterized in that: The charging circuit is composed of a high-voltage power supply, an energy storage capacitor, a diode and a discharge load, wherein the diode is connected in parallel with the discharge load; The discharge circuit is composed of an energy storage capacitor, voltage sensitive components, a current limiting resistor, and a discharge load.

3. A passive, passively triggered pulse generating circuit according to claim 1, characterized in that: The charging circuit is composed of a high-voltage power supply, an energy storage resistor, and a current limiting resistor; The discharge circuit is composed of an energy storage capacitor, voltage sensitive components, a current limiting resistor, and a discharge load.

4. A passive, passively triggered pulse generating circuit according to claim 1, characterized in that: The voltage sensitive component is a ceramic gas discharge tube, a glass discharge tube or a semiconductor discharge tube.

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