Flash lamp LED chip and preparation method thereof

Abstract

The invention provides a flash lamp LED chip and a preparation method thereof, and belongs to the field of semiconductor devices.The flash lamp LED chip comprises a base material provided with a driving circuit and an LED matrix arranged on the base material, the LED matrix comprises a first LED set arranged in the middle of the driving circuit and second LED sets arranged on the left side and the right side of the first LED set, and the first LED set is connected with the second LED set. The second LED group is arranged on the upper side and the lower side of the first LED group, the third LED group is arranged on the upper side and the lower side of the first LED group, the fourth LED group is located on the periphery of the first LED group and arranged between the second LED group and the third LED group, the driving circuit is used for controlling the multiple LED groups in the LED matrix, the first LED group and the fourth LED group are square in appearance, and the first LED group and the fourth LED group are arranged in parallel. And the second LED group and the third LED group are rectangular in appearance. The flash lamp LED chip provided by the invention solves the problem that a flash lamp in the prior art cannot effectively highlight a main body and effectively improve the contrast ratio of light and shade in shooting.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a flashlight LED chip and a preparation method thereof. Background Art

[0002] With the development of electronic devices such as mobile phones and tablet computers, electronic devices are constantly being updated and iterated while integrating more and more functions. Electronic devices are usually equipped with a camera module. In order to ensure that the camera module obtains a better shooting effect, a flash module is also configured on one side of the camera module. The flash module can provide fill light for the camera module's shooting, thereby enabling the camera module to complete shooting in dark environments (such as night, cloudy days, dimly lit basements, etc.).

[0003] The emergence of flash is essentially to cater to the needs of photography. Photography is actually an art of using light. First of all, light must shine on the film to take a photo. Secondly, only by controlling the light parameters such as specific intensity, angle, color temperature, etc. can a good photo be taken. The main functions of mobile phone flash are: first, fill light to make the main image clearly presented and enhance the contrast between light and dark; second, highlight the main body and highlight the key points through the distribution of light; third, dual-temperature flash can present a richer sense of atmosphere. Currently, flashes are usually based on single LED or dual-color temperature LED, and these two types of flashes in the existing technology can only perform simple fill light, and neither can effectively highlight the main body and effectively enhance the contrast between light and dark in shooting. Summary of the invention

[0004] Based on this, the purpose of the present invention is to provide a flash LED chip and a preparation method thereof, so as to solve the problem that the flash in the prior art cannot effectively highlight the subject and effectively improve the light and dark contrast of the shooting.

[0005] The present invention provides a flashlight LED chip, comprising a substrate provided with a driving circuit, and an LED matrix provided on the substrate, wherein the LED matrix comprises a first LED group centrally provided on the driving circuit, a second LED group provided on the left and right sides of the first LED group, a third LED group provided on the upper and lower sides of the first LED group, and a fourth LED group located outside the first LED group and provided between the second LED group and the third LED group, wherein the driving circuit is used to control the LED groups in the LED matrix to work individually or simultaneously.

[0006] The present invention provides an LED matrix on a substrate provided with a driving circuit, and the LED matrix includes a first LED group arranged in the center, a second LED group arranged on the left and right sides of the first LED group, a third LED group arranged on the upper and lower sides of the first LED group, and a fourth LED group arranged around the first LED group, so that the driving circuit can control multiple LED groups respectively, and then through the reasonable distribution of the LED groups and the individual control of each LED group, the switching of multiple lighting modes such as center lighting, surrounding lighting and four-side lighting is realized, so that the subject can be well highlighted according to the lighting requirements and the light-dark contrast during shooting can be improved. In addition, by providing multiple LED groups instead of multiple independent LEDs, the preparation and installation are simpler, and the difficulty of control required for mode switching is simplified. In addition, by reasonably arranging the LED groups, the LED matrix has the advantage of small size, thereby effectively utilizing the internal space of the mobile phone. Therefore, the present invention solves the problem that the flash in the prior art cannot effectively highlight the subject and effectively improve the light-dark contrast during shooting.

[0007] Preferably, the LED group includes a plurality of LED chips, and the ratio of the number of LED chips in the first LED group, the second LED group, the third LED group and the fourth LED group is (4-12):(2-6):(2-6):(1-3).

[0008] Preferably, the first LED group and the fourth LED group are in a square shape, and the second LED group and the third LED group are in a rectangular shape.

[0009] Preferably, the LED chips in the first LED group are arranged in a field shape, the LED chips in the second LED group and the third LED group are arranged vertically and horizontally respectively, and the single fourth LED group includes at least one LED chip.

[0010] The present invention also provides a method for preparing a flashlight LED chip, the method comprising:

[0011] Determine a corresponding preset row spacing according to the type of the LED group, and arrange the semiconductor to be packaged on the row plate according to the preset row spacing;

[0012] Coating a preset fluorescent glue on the arrangement plate and the packaged semiconductor to form a fluorescent glue layer;

[0013] Flip-chip via high-viscosity UV film;

[0014] Cutting is performed on the surface of the semi-finished product to obtain a cutting groove;

[0015] Filling the cutting groove with white glue to form an optical dam;

[0016] Determine a corresponding preset cutting tool and a preset cutting distance according to the type of the LED group, and perform cutting according to the preset cutting distance to obtain the corresponding LED group;

[0017] Arranging a plurality of different types of LED groups on a substrate provided with corresponding driving circuits according to a preset method to form an LED matrix;

[0018] Among them, the LED matrix includes a first LED group centrally arranged on the driving circuit, a second LED group arranged on the left and right sides of the first LED group, a third LED group arranged on the upper and lower sides of the first LED group, and a fourth LED group located in the first LED group and arranged between the second LED group and the third LED group. The driving circuit is used to control multiple LED groups in the LED matrix separately.

[0019] Preferably, the components of the preset fluorescent glue include: a first silica gel, a second silica gel, a first fluorescent powder, a second fluorescent powder, silica powder and an anti-settling powder, and the ratio of the first silica gel, the second silica gel, the first fluorescent powder, the second fluorescent powder, the silica powder and the anti-settling powder is (1.5-2.6): (7.8-8.9): (0.3-0.8): (9.2-10.3): (2.4-3.7): (0.15-2.5).

[0020] Preferably, the depth of the cutting groove is 90um-110um.

[0021] Preferably, the cutting tool corresponding to the fourth LED component is a blade with a width of 0.2 mm, and the cutting tool corresponding to other types of LED components is a blade with a width of 0.08 mm.

[0022] Preferably, the thickness of the fluorescent glue layer is 400um-500um.

[0023] Preferably, the LED group is composed of a plurality of LEDs, and the ratio of the number of LEDs in the first LED group, the second LED group, the third LED group and the fourth LED group is (4-12):(2-6):(2-6):(1-3). BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 Schematic diagram of the structure of the light-emitting layer in the flash LED chip in one embodiment of the present invention;

[0025] Figure 2 is a flow chart of a method for preparing a flashlight LED chip in one embodiment of the present invention;

[0026] Figure 3 is a flow chart of a method for preparing an LED group in one embodiment of the present invention;

[0027] Description of main component symbols:

[0028] The following specific implementation manner will further illustrate the present invention in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0029] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. Several embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0030] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0031] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0032] like Figure 1 As shown, the present invention discloses a partial structural schematic diagram of a flashlight LED chip, the flashlight LED chip includes a substrate 10 provided with a driving circuit, an LED matrix arranged on the substrate 10, the LED matrix includes a first LED group 20 centrally arranged on the driving circuit, a second LED group 30 arranged on the left and right sides of the first LED group 20, a third LED group 40 arranged on the upper and lower sides of the first LED group 20, and a fourth LED group 50 located in the first LED group 20 and arranged between the second LED group 30 and the third LED group 40, the driving circuit is used to control multiple LED groups in the LED matrix respectively.

[0033] In the present embodiment, the LED group is composed of a plurality of LEDs, and the ratio of the number of LEDs in the first LED group 20, the second LED group 30, the third LED group 40 and the fourth LED group 50 is (4-12): (2-6): (2-6): (1-3). Exemplarily, the ratio of the number of LEDs in the first LED group 20, the second LED group 30, the third LED group 40 and the fourth LED group 50 is 4:2:2:1, 6:3:3:2, 8:3:3:2, 10:4:4:3 or 12:5:5:2, but not limited thereto. By way of example and not limitation, in some optional embodiments, the first LED group 20 and the fourth LED group 50 are square in shape, the second LED group 30 and the third LED group 40 are rectangular in shape, the first LED group 20 is composed of a plurality of LEDs arranged in a field shape, the second LED group 30 and the third LED group 40 are respectively composed of a plurality of LEDs arranged vertically and horizontally, and the fourth LED group 50 is composed of a single LED. In specific implementation, the structural distribution and function can be achieved by setting the outer contour of the first LED group 20 to be circular, and the second LED group 30, the third LED group 40 and the fourth LED group 50 to be ring-shaped. However, the circular and ring-shaped LED groups do not use the arrangement of slices during production and manufacturing, and the cutting difficulty is increased, thereby increasing the production and manufacturing costs in disguise. In addition, the first LED group 20 can also adopt a rectangular design, but the light set in the long direction is more divergent in its length direction. Therefore, in specific implementation, the preferred first LED group 20 is set in a square, and the LEDs in the first LED group 20 are distributed in a field shape, which is convenient for production and manufacturing, and makes other LED groups also have regular outer contours, which is convenient for the position distribution arrangement of all LED groups, thereby achieving the effect of maximizing the use of space. In addition, the LEDs distributed in the field shape make the first LED group 20 emit light evenly, avoiding the situation of divergent light.

[0034] It can be understood that the present invention is provided with an LED matrix on a substrate 10 provided with a driving circuit, and the LED matrix includes a first LED group 20 arranged in the center, a second LED group 30 arranged on the left and right sides of the first LED group 20, a third LED group 40 arranged on the upper and lower sides of the first LED group 20, and a fourth LED group 50 arranged around the first LED group 20, so that the driving circuit can control multiple LED groups respectively, and then through the reasonable distribution of the LED groups and the individual control of each LED group, the switching of multiple light modes such as center light, surrounding light and four-side light can be realized, so that the subject can be well highlighted according to the lighting requirements and the light-dark contrast during shooting can be improved. In addition, by setting a plurality of LED groups instead of a plurality of independent LEDs, the preparation and installation are simpler, and the difficulty of control required for mode switching is simplified. In addition, by reasonably arranging the LED groups, the LED matrix has the advantage of small size, thereby effectively utilizing the internal space of the mobile phone. Therefore, the present invention solves the problem that the flash in the prior art cannot effectively highlight the subject and effectively improve the light-dark contrast during shooting.

[0035] Accordingly, refer to Figures 2 to 3 The present invention also discloses a method for preparing a flashlight LED chip, which is used to prepare the above-mentioned flashlight LED chip, wherein the preparation method comprises the following steps:

[0036] S100: preparing a plurality of LED groups of different types;

[0037] Preferably, at least a first LED group 20, a second LED group 30, a third LED group 40 and a fourth LED group 50 are included, wherein the ratio of the number of LEDs in the first LED group 20, the second LED group 30, the third LED group 40 and the fourth LED group 50 is (4-12):(2-6):(2-6):(1-3), and exemplarily, the ratio of the number of LEDs in the first LED group 20, the second LED group 30, the third LED group 40 and the fourth LED group 50 is 4:2:2:1, 6:3:3:2, 8:3:3:2, 10:4:4:3 or 12:5:5:2, but is not limited thereto.

[0038] S200: Arrange a plurality of different types of LED groups on a substrate 10 provided with corresponding driving circuits according to a preset method to form an LED matrix.

[0039] Specifically, S100 includes:

[0040] S101: determining a corresponding preset row spacing according to the type of the LED group, and placing the semiconductor to be packaged on the row plate according to the preset row spacing;

[0041] Specifically, the preset row spacings of the first LED group 20, the second LED group 30 and the third LED are the same, wherein the lateral spacing is 400um-500um, and exemplarily, the lateral spacing is 400um, 434um, 468um, 484um or 500um, but not limited thereto. The longitudinal spacing is 500um-600um, and exemplarily, the longitudinal spacing is 500um, 524um, 545um, 586um or 600um, but not limited thereto. The lateral spacing in the preset row spacing corresponding to the fourth LED group 50 is 550um-650um, and exemplarily, the lateral spacing in the preset row spacing corresponding to the fourth LED group 50 is 550um, 588um, 600um, 632um or 650um, but not limited thereto. The longitudinal spacing in the preset row spacing corresponding to the fourth LED group 50 is 600um-700um. Exemplarily, the longitudinal spacing in the preset row spacing corresponding to the fourth LED group 50 is 600um, 634um, 665um, 686um or 700um, but not limited thereto.

[0042] S102: coating a preset fluorescent glue on the wafer arrangement plate and the packaged semiconductor to form a fluorescent glue layer;

[0043] Specifically, the components of the preset fluorescent glue include: a first silica gel, a second silica gel, a first fluorescent powder, a second fluorescent powder, silica powder and an anti-settling powder, and the ratio of the first silica gel, the second silica gel, the first fluorescent powder, the second fluorescent powder, the silica powder and the anti-settling powder is (1.5-2.6): (7.8-8.9): (0.3-0.8): (9.2-10.3): (2.4-3.7): (0.15-2.5). For example, the first silica gel, the second silica gel, the first fluorescent powder, the second fluorescent powder, the silica powder and the anti-settling powder are (1.5-2.6): (7.8-8.9): (0.3-0.8): (9.2-10.3): (2.4-3.7): (0.15-2.5). The ratio of the glue, the first phosphor, the second phosphor, the silica powder and the anti-settling powder is 1.5:7.8:0.3:9.2:2.4:0.15, 2.2:8.1:0.5:9.4:3.1:0.19, 2.08:8.32:0.6344:9.724:3.12:0.028, 1.7:8.5:0.6:10.1:3.3:2.2 or 2.6:8.9:0.8:10.3:3.7:2.5, but not limited to this. The thickness of the fluorescent glue layer is 400um-500um, and the exemplary thickness of the fluorescent glue is 400um, 420um, 450um, 480um or 500um, but not limited to this. Among them, the first silica gel and the second silica gel can be methyl vinyl silicone resin modified in different proportions. In addition, the first phosphor can be RH630Q3 red powder, and the second phosphor can be UJB-G535A yellow-green powder. The high color gamut phosphors are mixed to provide an overall color gamut of the flash. In addition, silica powder is added to improve the temperature resistance of the fluorescent glue. The anti-settling powder can be DM-30.

[0044] S103: Flip-chip mounting through high-viscosity UV film;

[0045] Specifically, the semiconductor to be packaged is placed on the surface by flipping the chip through a high-viscosity UV film. In the process of chip industrialization, the use of high-viscosity UV film can significantly improve the quality of the Wafer processing technology and ensure the superiority of the flip-package production line. The characteristics of the high-viscosity UV film enable it to perform well in applications. It can provide better adhesion when thinning and cutting small chips, preventing the chip from breaking during the removal process. Through experimental comparison, the application effect of high-viscosity UV film in the flip-package production line is in line with expectations, and can effectively improve production efficiency and product quality.

[0046] S104: cutting the surface of the semi-finished product to obtain a cutting groove;

[0047] Specifically, the cutting groove is cut with a specific tool, and the cutting groove is formed by one cutting. The cross-sectional area of ​​the cutting groove gradually increases from bottom to top, and the depth of the cutting groove is 90um-110um. Exemplarily, the depth of the cutting groove is 90um, 95um, 100um, 105um or 110um, but not limited to this.

[0048] S105: Filling the cutting groove with white glue to form an optical dam.

[0049] Specifically, the white glue is composed of TiO2 and silica gel, wherein the proportion of TiO2 in the white glue is 20%-40%, and exemplary, the proportion of TiO2 in the white glue is 20%, 25%, 30%, 35% or 40%, but not limited thereto. Specifically, by adopting the CSP structure mode, TiO2 optical dams are made on four sides to improve the luminous brightness and luminous concentration.

[0050] S106: determining a corresponding preset cutting tool and a preset cutting gap according to the type of the LED group, and performing cutting according to the preset cutting gap to obtain the corresponding LED group;

[0051] Specifically, the first LED group 20, the second LED group 30 and the third LED group 40 are cut with a 0.08 mm blade, and the fourth LED group 50 is cut with a 0.2 mm blade. The lateral spacing in the preset cutting spacing corresponding to the first LED group 20 is 900um-1000um. For example, the lateral spacing in the preset cutting spacing corresponding to the first LED group 20 is 900um, 918um, 936um, 978um or 1000um, but not limited thereto. The longitudinal spacing in the preset cutting spacing corresponding to the first LED group 20 is 1000um-1100um. For example, the longitudinal spacing in the preset cutting spacing corresponding to the first LED group 20 is 1000um, 1030um, 1050um, 1090um or 1100um, but not limited thereto. The horizontal spacing in the preset cutting spacing corresponding to the second LED group 30 is 900um-1000um. For example, the horizontal spacing in the preset cutting spacing corresponding to the second LED group 30 is 900um, 928um, 936um, 988um or 1000um, but not limited thereto. The longitudinal spacing in the preset cutting spacing corresponding to the second LED group 30 is 500um-600um. For example, the longitudinal spacing in the preset cutting spacing corresponding to the second LED group 30 is 500um, 530um, 545um, 580um or 600um, but not limited thereto. The horizontal spacing in the preset cutting spacing corresponding to the third LED group 40 is 400um-500um. For example, the horizontal spacing in the preset cutting spacing corresponding to the third LED group 40 is 400um, 422um, 448um, 468um or 500um, but not limited thereto. The longitudinal spacing in the preset cutting spacing corresponding to the third LED group 40 is 1000um-1100um. For example, the longitudinal spacing in the preset cutting spacing corresponding to the third LED group 40 is 1000um, 1020um, 1060um, 1090um or 1100um, but not limited thereto. The transverse spacing in the preset cutting spacing corresponding to the fourth LED group 50 is 500um-6000um. For example, the transverse spacing in the preset cutting spacing corresponding to the fourth LED group 50 is 500um, 524um, 549um, 588um or 600um, but not limited thereto. The longitudinal spacing in the preset cutting spacing corresponding to the fourth LED group 50 is 600um-700um. For example, the longitudinal spacing in the preset cutting spacing corresponding to the fourth LED group 50 is 600um, 624um, 665um, 687um or 700um, but not limited thereto. In addition, by using different cutting tools for cutting according to the type of LED group, sufficient spacing between different LED groups is ensured, while frequently using thin and easily damaged blades, which increases blade wear, is avoided.

[0052] In summary, the flash LED chip and preparation method thereof in the embodiment of the present invention, by attaching 4 types of LED combinations with different structures on a substrate 10 with a designed driving circuit, and covering them with optical components to form a multifunctional LED flash module, can emit different lighting requirements in different driving modes, and highlight the realization of mode conversion of center lighting, surrounding lighting and four-side lighting; the flash LED matrix also has the characteristics of small size and high brightness, which is convenient for optical design and space utilization in mobile phones. Specifically, an LED matrix is ​​provided on a substrate 10 provided with a driving circuit, and the LED matrix includes a first LED group 20 arranged in the center, a second LED group 30 arranged on the left and right sides of the first LED group 20, a third LED group 40 arranged on the upper and lower sides of the first LED group 20, and a fourth LED group 50 arranged around the first LED group 20, so that the driving circuit can control multiple LED groups respectively, and then through the reasonable distribution of the LED groups and the individual control of each LED group, the switching of multiple lighting modes such as center lighting, surrounding lighting and four-side lighting is realized, so that the subject can be well highlighted according to the lighting requirements and the light-dark contrast during shooting can be improved. In addition, by providing multiple LED groups instead of multiple independent LEDs, the preparation and installation are simpler, and the difficulty of control required for mode switching is simplified. In addition, by reasonably arranging the LED groups, the LED matrix has the advantage of small size, thereby effectively utilizing the internal space of the mobile phone. Therefore, the present invention solves the problem that the flash in the prior art cannot effectively highlight the subject and effectively improve the light-dark contrast during shooting.

[0053] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples" or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0054] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A flash LED chip, characterized in that: It includes a substrate with a driving circuit and an LED matrix arranged on the substrate. The LED matrix includes a first LED group centrally arranged on the driving circuit, a second LED group arranged on the left and right sides of the first LED group, a third LED group arranged on the upper and lower sides of the first LED group, and a fourth LED group located outside the first LED group and arranged between the second LED group and the third LED group. The driving circuit is used to control the LED groups in the LED matrix to work individually or simultaneously.

2. The flash LED chip according to claim 1, characterized in that: The LED group includes a plurality of LED chips, and the ratio of the number of LED chips in the first LED group, the second LED group, the third LED group and the fourth LED group is (4-12):(2-6):(2-6):(1-3).

3. The flash LED chip according to claim 2, characterized in that: The first LED group and the fourth LED group have a square shape, and the second LED group and the third LED group have a rectangular shape.

4. The flash LED chip according to claim 3, characterized in that: The LED chips in the first LED group are arranged in a field shape, the LED chips in the second LED group and the third LED group are arranged vertically and horizontally respectively, and the fourth LED group alone includes at least one LED chip.

5. A method for preparing a flashlight LED chip, characterized in that: Used to prepare the flash LED chip according to any one of claims 1 to 4, the preparation method comprising: Determine a corresponding preset row spacing according to the type of the LED group, and arrange the semiconductor to be packaged on the row plate according to the preset row spacing; Coating a preset fluorescent glue on the arrangement plate and the packaged semiconductor to form a fluorescent glue layer; Flip-chip via high-viscosity UV film; Cutting is performed on the surface of the semi-finished product to obtain a cutting groove; Filling the cutting groove with white glue to form an optical dam; Determine a corresponding preset cutting tool and a preset cutting distance according to the type of the LED group, and perform cutting according to the preset cutting distance to obtain the corresponding LED group; Arranging a plurality of different types of LED groups on a substrate provided with corresponding driving circuits according to a preset method to form an LED matrix; Among them, the LED matrix includes a first LED group centrally arranged on the driving circuit, a second LED group arranged on the left and right sides of the first LED group, a third LED group arranged on the upper and lower sides of the first LED group, and a fourth LED group located in the first LED group and arranged between the second LED group and the third LED group. The driving circuit is used to control multiple LED groups in the LED matrix separately.

6. The method for preparing a flashlight LED chip according to claim 5, characterized in that: The components of the preset fluorescent glue include: a first silica gel, a second silica gel, a first fluorescent powder, a second fluorescent powder, silica powder and an anti-settling powder. The ratio of the first silica gel, the second silica gel, the first fluorescent powder, the second fluorescent powder, the silica powder and the anti-settling powder is (1.5-2.6): (7.8-8.9): (0.3-0.8): (9.2-10.3): (2.4-3.7): (0.15-2.5).

7. The method for preparing a flashlight LED chip according to claim 7, characterized in that: The depth of the cutting groove is 90um-110um.

8. The method for preparing a flashlight LED chip according to claim 8, characterized in that: The cutting tool corresponding to the fourth LED component is a blade with a width of 0.2 mm, and the cutting tool corresponding to other types of LED components is a blade with a width of 0.08 mm.

9. The method for preparing a flashlight LED chip according to claim 8, characterized in that: The thickness of the fluorescent glue layer is 400um-500um.

10. The method for preparing a flashlight LED chip according to claim 8, characterized in that: The LED group is composed of a plurality of LEDs, and the ratio of the number of LEDs in the first LED group, the second LED group, the third LED group and the fourth LED group is (4-12):(2-6):(2-6):(1-3).

Images