Hemispherical harmonic oscillator nanogram-level lossless etching device based on electrochemical induction
Through chemical etching technology based on electrochemical induction and a combined distance control system for slide rail and micro-movement devices, the nanometer-level mass removal of hemispherical oscillator is achieved, solving the problem of difficult to achieve high-precision and damage-free processing in the prior art. Improves the stability and consistency of the oscillator performance.
Patent Information
- Application Number
- CN202411664710.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-20
- Publication Date
- 2025-02-18
AI Technical Summary
The prior art is difficult to achieve nanometer mass removal of hemispherical oscillator, and damage is easily introduced during processing, reducing the performance of the oscillator.
Using chemical etching technology based on electrochemical induction, combined with a combined distance control system for sliding rails and micromovement devices, the spherical latitude and latitude positioning of the oscillator is realized, and the double-layer tube design of the electrode head and the real-time observation of the electron microscope ensures high accuracy. and damage-free processing.
The nano-level mass removal of hemispherical oscillator is achieved, ensuring high precision and consistency in processing, avoiding damage, and improving the stability and quality factor of the oscillator performance.
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Figure CN119465365A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the field of precision machining, and in particular to a nanogram-level nondestructive etching machining device of a hemispherical resonator based on electrochemical induction. Background Art
[0002] The hemispherical resonant gyroscope is a high-precision gyroscope based on the principle of Coriolis precession. It is widely used in high-end fields such as aerospace and deep space exploration. The machining accuracy of the hemispherical resonator, the core component of the hemispherical resonant gyroscope, is crucial to the performance of the hemispherical resonant gyroscope. With the further improvement of gyroscope accuracy, ultra-precision machining methods based on grinding and polishing have approached their process limits, but it is still difficult to meet the requirements for gyroscope use. In order to break through this bottleneck, the industry uses a method of determining the area to remove mass to perform mass adjustment on the hemispherical resonator. The improvement in gyroscope accuracy has placed extremely high demands on the removal performance of the adjustment device, especially the need for a adjustment test bench with nanogram-level mass removal to complete.
[0003] Chinese patent CN109443336A discloses a "16-point side wall adjustment system and method for a metal cylindrical resonant gyroscope". The system includes a base plate, a resonator positioning test device and a high-precision milling device, which can simply and quickly adjust the frequency cracking of the resonator to ensure the symmetry of the resonator after adjustment. However, the use of milling will introduce processing damage and reduce the quality factor. Chinese patent CN105865430B discloses a "system and method for chemical etching-based integrated quartz cylindrical shell resonator shaping". The system includes a coarse adjustment lifting platform, a fine adjustment lifting platform, etc., and has the advantages of simple system, low cost, high shaping efficiency, and simple operation. It can effectively reduce the frequency cracking of the integrated quartz cylindrical shell resonator and correct the vibration mode deviation angle. However, the above method requires a large amount of etching liquid, and the minimum removal mass is only in the milligram level. Chinese patent CN115628730B discloses a "quartz hemispherical resonator adjustment method and adjustment device", which determines the adjustment position and mass removal through online detection of the quartz hemispherical resonator, and then performs mass removal adjustment on the quartz hemispherical resonator. However, the above device can only remove the position at the same latitude of the resonator, lacking latitude freedom. Summary of the invention
[0004] In order to solve the problems existing in the background technology, the present invention provides a nanogram-level non-destructive etching processing device for a hemispherical oscillator based on electrochemical induction, which can realize longitude and latitude positioning, and can achieve nanogram-level mass removal based on the principle of electrochemically induced chemical etching without introducing additional damage, thereby ensuring the stability and consistency of the oscillator performance.
[0005] The technical solution of the present invention is: a nanogram-level non-destructive etching processing device of a hemispherical resonator based on electrochemical induction, comprising a base, a semicircular slide rail base, a semicircular slide rail, a slide table, a force sensor, a transfer slide plate, a vertical slide rail, a micro-motion device, a magnetic table base, an electron microscope, an electrode head, a resonator clamp, a rotating table, a horizontal micro-motion table and a control cabinet;
[0006] The semicircular slide rail base includes a left base and a right base, the left base and the right base are respectively fixed on the left and right sides of the base, the left and right ends of the semicircular slide rail are respectively fixed on the left base and the right base, and the slide table is slidably connected to the semicircular slide rail.
[0007] The vertical slide is fixedly mounted on the slide table, the vertical slide is connected to the force sensor via the adapter slide, the adapter slide is slidably connected to the vertical slide, the force sensor is connected to the micro-motion device, and the micro-motion device is connected to the electrode head. The vertical slide and the micro-motion device control the distance between the electrode head and the resonator in a "contact-leave" manner.
[0008] The magnetic meter base is installed on the transfer slide, and an electron microscope is installed at the end of the magnetic meter base.
[0009] The horizontal micro-motion stage is installed on a base, the rotating stage is installed on the horizontal micro-motion stage, and the resonator holder is installed on the rotating stage.
[0010] The electrode head includes an electrode base, an electrode inner tube and an electrode sleeve. The electrode base is connected to the micro-motion device. The electrode base is connected to the electrode sleeve through a thread. The inside of the electrode sleeve is connected to the electrode inner tube through a thread. There is a gap between the electrode inner tube and the electrode sleeve.
[0011] The electrode inner tube is connected to an electrolyte pumping device.
[0012] The control cabinet is connected with the slide table, the force sensor, the transfer slide plate, the micro-motion device, the electron microscope, the electrode head and the rotating table respectively through control lines.
[0013] Furthermore, the planar shape of the slide is fan-shaped.
[0014] Compared with the prior art, this solution has at least the following advantages:
[0015] 1. The present invention has one vertical degree of freedom and two rotational degrees of freedom, and can be positioned according to the longitude and latitude of the spherical surface of the resonator, and can accurately position the spherical surface of the resonator in the vertical plane with the least degree of freedom of movement, thereby ensuring accuracy and efficiency during the processing.
[0016] 2. The present invention uses a combined distance control system of a slide rail and a micro-motion device to maintain high position accuracy while having a simple device structure. At the same time, an electron microscope is used to observe the processing area to further ensure high position accuracy of the electrode and the resonator and high precision and consistency of electrochemical processing.
[0017] 3. The present invention adopts an electrochemically induced chemical etching method, which can achieve nanogram-level mass removal on the spherical surface of the oscillator, ensuring high precision and high consistency in the processing of the oscillator. It can also achieve damage-free processing on the spherical surface of the oscillator without introducing new defects such as cracks and reducing the quality factor.
[0018] 4. The electrode of the present invention adopts a double-layer tube design, and the waste liquid from processing is sucked back into the casing, which reduces the pollution of the electrolyte to the resonator and the environment and does not reduce the quality factor. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 It is a structural schematic diagram of the present invention.
[0020] Figure 2 Schematic diagram of the electrode head.
[0021] In the figure: 1, base; 2, semicircular slide base; 3, semicircular slide; 4, force sensor; 5, adapter slide; 6, vertical slide; 7, micro-motion device; 8, magnetic table base; 9, electron microscope; 10, electrode head; 11, resonator holder; 12, rotating table; 13, horizontal micro-motion table, 201, left base; 202, right base; 601, electrode base; 602, electrode inner tube; 603, electrode sleeve. DETAILED DESCRIPTION
[0022] The present invention will be further described below in conjunction with the accompanying drawings. Figure 1-2 As shown, a nanogram-level non-destructive etching processing device based on electrochemical induction of a hemispherical resonator comprises a base 1, a semicircular slide rail base 2, a semicircular slide rail 3, a slide table, a force sensor 4, a transfer slide plate 5, a vertical slide rail 6, a micro-motion device 7, a magnetic table base 8, an electron microscope 9, an electrode head 10, a resonator holder 11, a rotating table 12, a horizontal micro-motion table 13 and a control cabinet;
[0023] The semicircular slide rail base 2 includes a left base 201 and a right base 202, and the left base 201 and the right base 202 are respectively fixed on the left and right sides of the base 1, and the left and right ends of the semicircular slide rail 3 are respectively fixed on the left base 201 and the right base 202, and the slide table is slidably connected to the semicircular slide rail 3.
[0024] The vertical slide rail 6 is fixedly mounted on the slide table, the vertical slide rail 6 is connected to the force sensor 4 via the adapter slide plate 5, the adapter slide plate 5 is slidably connected to the vertical slide rail 6, the force sensor 4 is connected to the micro-motion device 7, and the micro-motion device 7 is connected to the electrode head 10. The vertical slide rail 6 and the micro-motion device 7 control the distance between the electrode head 10 and the resonator in a "contact-leave" manner.
[0025] The magnetic meter base 8 is installed on the transfer slide 5, and an electron microscope 9 is installed at the end of the magnetic meter base 8.
[0026] The horizontal fine-motion stage 13 is mounted on the base 1 , the rotating stage 12 is mounted on the horizontal fine-motion stage 13 , and the resonator holder 11 is mounted on the rotating stage 12 .
[0027] The electrode head 10 includes an electrode base 601, an electrode inner tube 602 and an electrode sleeve 603. The electrode base 601 is connected to the micro-motion device 7. The electrode base 601 is connected to the electrode sleeve 603 by threads. The electrode sleeve 603 is connected to the electrode inner tube 602 by threads. There is a gap between the electrode inner tube 602 and the electrode sleeve 603.
[0028] The electrode inner tube 602 is connected to an electrolyte pumping device;
[0029] The control cabinet is connected to the slide table, the force sensor 4, the transfer slide plate 5, the micro-motion device 7, the electron microscope 9, the electrode head 10 and the rotating table 12 respectively through control lines.
[0030] Furthermore, the planar shape of the slide is fan-shaped.
[0031] The working principle of each component of the present invention is as follows:
[0032] The vertical slide rail 6 and the micro-motion device 7 control the distance between the electrode head 10 and the resonator in a "contact-leave" manner. Specifically, the force sensor 4 first determines whether the electrode is in contact with the resonator, and then controls the transfer slide 5 of the vertical slide rail 6 and the micro-motion device 7 to move in the opposite direction, ensuring the accuracy and consistency of the processing distance each time.
[0033] The electron microscope 9 can observe the relative position of the electrode head 10 and the resonator, determine the amount of electrolyte pumped out, and determine whether the processing process is stable, thereby ensuring the accuracy and consistency of each processing spacing.
[0034] The horizontal fine-motion stage 13 adjusts the position of the resonator on the horizontal plane so that the axis of the resonator is consistent with the axis of the electrode head 10, and the rotating stage 12 controls the rotation of the resonator, thereby performing mass removal at a certain longitude.
[0035] The resonator is processed by using the electrochemically induced chemical etching technology through the electrode head 10, and the mass removal at the nanogram level can be achieved by detecting the etching current and calculating the removed mass.
[0036] The electrolyte pumping device pumps a small amount of electrolyte to the tip of the electrode inner tube. The electrolyte pumping device can adjust the volume of the pumped electrolyte according to processing needs. The small amount of electrolyte pumped out forms droplets due to surface tension, and the droplets contact the spherical shell of the resonator.
[0037] Through the transfer slide 5 and the micro-motion device 7 of the vertical slide rail 6, the electrode head 10 and the resonator can have a motion range of 0 to 10 cm, and the micro-motion device 7 can maintain a spacing of 1 to 50 μm with sub-micron positioning accuracy, and electrochemically induced chemical etching is performed within this micro spacing. After the etching is completed, the droplet is sucked away from the resonator spherical shell through the annular gap formed by the electrode sleeve and the electrode inner tube.
[0038] These components work together to provide the necessary positioning, driving and control means for high-precision trimming of the hemispherical resonator.
[0039] The working method of the present invention comprises the following steps:
[0040] A. After the assembly of the present invention is completed, the slide table on the semicircular slide rail 3 is adjusted to the top of the semicircular slide rail 3 through the control cabinet. The electrode head 10 is controlled to descend until the electrode head 10 is basically flush with the center of the resonator holder 11. The magnetic table base 8 is manually adjusted so that the electron microscope 9 can clearly see the center of the electrode head 10 and the resonator holder 11 at the same time. At this time, the rotating table 12 is controlled to rotate at a constant speed. The coaxiality of the axis of the electrode head 10 and the axis of the resonator holder 11 is judged by the picture seen by the electron microscope 9. If they are obviously not coaxial, the horizontal micro-motion table 13 is manually adjusted to adjust the axis of the resonator holder 11 and the axis of the electrode head 10 to be coaxial.
[0041] B. Install the resonator on the resonator holder 11, and manually adjust the magnetic table seat 8 so that the electron microscope 9 can clearly see the electrode head 10. Enter the position coordinates of the point to be removed in the control cabinet, and the control cabinet automatically determines the position of the slider of the semicircular slide rail 3 according to the spherical latitude coordinates of the etching point, and determines the rotation angle of the rotating table 12 according to the spherical longitude coordinates of the etching point. Then lower the electrode head 10. When the distance between the electrode head 10 and the resonator spherical surface is about 0.5 to 1 mm, the electrode head 10 stops moving, and the micro-motion device 7 is controlled to slowly reduce the gap. At the same time, observe the reading of the force sensor 4 until the reading suddenly changes. At this time, the electrode head 10 has contacted the resonator spherical surface. Observe the picture sent back by the electron microscope 9, and after repeatedly confirming that the electrode head 10 is in contact with the resonator spherical surface, control the micro-motion device 7 to move to the required processing spacing.
[0042] C. Start the electrolyte pumping device. The electrolyte droplets flow out from the inner tube of the electrode and contact the spherical surface. Enter the removal mass of the position to be removed into the control cabinet. The control cabinet determines the power-on voltage and time according to the input removal mass to perform electrochemical etching. After the etching is completed, the droplets are sucked away from the resonator shell through the annular gap formed by the electrode sleeve and the inner tube of the electrode, completing one etching.
[0043] The present invention is not limited to this embodiment, and any equivalent concepts or changes within the technical scope disclosed by the present invention are included in the protection scope of the present invention.
Claims
1. A nanogram-level nondestructive etching processing device based on electrochemically induced hemispherical resonator, characterized in that: It comprises a base (1), a semicircular slide rail base (2), a semicircular slide rail (3), a slide table, a force sensor (4), a transfer slide plate (5), a vertical slide rail (6), a micro-motion device (7), a magnetic table base (8), an electron microscope (9), an electrode head (10), a resonator clamp (11), a rotating table (12), a horizontal micro-motion table (13) and a control cabinet; The semicircular slide rail base (2) comprises a left base (201) and a right base (202), wherein the left base (201) and the right base (202) are respectively fixed to the left and right sides of the base (1), and the left and right ends of the semicircular slide rail (3) are respectively fixed to the left base (201) and the right base (202), and the slide table is slidably connected to the semicircular slide rail (3); The vertical slide rail (6) is fixedly mounted on the slide table, the vertical slide rail (6) is connected to the force sensor (4) via the adapter slide plate (5), the adapter slide plate (5) is slidably connected to the vertical slide rail (6), the force sensor (4) is connected to the micro-motion device (7), and the micro-motion device (7) is connected to the electrode head (10); the vertical slide rail (6) and the micro-motion device (7) control the distance between the electrode head (10) and the resonator in a "contact-leave" manner; The magnetic meter base (8) is installed on the transfer slide (5), and an electron microscope (9) is installed at the end of the magnetic meter base (8); The horizontal fine-motion stage (13) is mounted on the base (1), the rotating stage (12) is mounted on the horizontal fine-motion stage (13), and the resonator holder (11) is mounted on the rotating stage (12); The electrode head (10) comprises an electrode base (601), an electrode inner tube (602) and an electrode sleeve (603); the electrode base (601) is connected to the micro-motion device (7); the electrode base (601) is connected to the electrode sleeve (603) via a thread; the inside of the electrode sleeve (603) is connected to the electrode inner tube (602) via a thread; and a gap is provided between the electrode inner tube (602) and the electrode sleeve (603); The electrode inner tube (602) is connected to an electrolyte pumping device; The control cabinet is respectively connected to the slide table, the force sensor (4), the transfer slide plate (5), the micro-motion device (7), the electron microscope (9), the electrode head (10) and the rotating table (12) through control lines.
2. According to claim 1, a nanogram-level non-destructive etching processing device based on electrochemically induced hemispherical resonator is characterized in that: The planar shape of the slide is fan-shaped.
Citation Information
Patent Citations
A Chemical Etching-Based Integrated Quartz Cylindrical Shell Resonator Shaping System and Method
CN105865430B
16-point trimming system and 16-point trimming method for side wall of metal cylindrical resonator gyro
CN109443336A
Quartz hemispherical harmonic oscillator tuning method and tuning device
CN115628730B