Silicon carbide substrate manufacturing method and silicon carbide substrate manufacturing tool
By processing grooves on the side of the graphite substrate and surrounding isolation barriers and fixed tooling to grow silicon carbide substrates, the problems of long processing time, high cost and unstable cutting quality caused by traditional cutting methods are solved, and the process is simplified and shortened Production time and cost-reducing effects.
Patent Information
- Application Number
- CN202411571279.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-06
- Publication Date
- 2025-02-18
AI Technical Summary
Traditional silicon carbide substrate manufacturing methods require the use of grinding wheels to cut high-hard silicon carbide, resulting in long processing time, high cost and unstable cutting quality, affecting the performance of electronic components.
The grooves are processed on the side of the graphite substrate, and the isolation barrier and fixed tooling are surrounded. The inner side of the fixed tooling is provided with a projection matching the grooves, which is used to grow a silicon carbide substrate, and then the graphite substrate and tooling are removed to obtain two silicon carbide substrate.
It simplifies process difficulty, shortens production time, reduces production costs, improves cutting quality, and enhances the performance of electronic components.
Smart Images
Figure CN119480626A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to electronic component manufacturing technology, and in particular to a silicon carbide substrate manufacturing method and a silicon carbide substrate manufacturing tool. Background Art
[0002] Polycrystalline silicon carbide (SiC) substrates are increasingly used in the manufacture of electronic components due to their advantages such as low cost, low resistivity, high thermal conductivity, and thermal expansion coefficient comparable to that of 4H single crystals. Generally, the traditional method for manufacturing silicon carbide substrates is to grow polycrystalline silicon carbide on the surface of a disc-shaped graphite substrate, and silicon carbide is deposited on the entire surface of the graphite substrate. After the growth is completed, the curved side surface of the graphite substrate is cut by a grinding wheel to remove the silicon carbide on the side surface. Then, the graphite substrate is cut from the middle to be divided into two parts, and the graphite substrates in the two parts are removed by physical or chemical treatment methods to obtain a polycrystalline silicon carbide substrate.
[0003] The above solution requires the use of a grinding wheel to cut high-hardness silicon carbide, which takes a long time to cut, consumes a lot of processing time, and is costly. The uneven cutting quality will affect the performance of electronic components supported by the silicon carbide substrate. Summary of the invention
[0004] In order to solve one of the above-mentioned technical defects, a method for manufacturing a silicon carbide substrate and a silicon carbide substrate manufacturing tool are provided in an embodiment of the present application.
[0005] According to a first aspect of an embodiment of the present application, a method for manufacturing a silicon carbide substrate is provided, comprising:
[0006] machining grooves on the side of the graphite substrate;
[0007] Enclosing the isolation baffle on the side of the graphite substrate;
[0008] The fixing tool is arranged around the outside of the isolation baffle; the inner side of the fixing tool is provided with a protrusion matching the groove, and the protrusion is inserted into the groove to press the isolation baffle onto the graphite substrate;
[0009] Silicon carbide is grown on the upper and lower surfaces of a graphite substrate surrounded by an isolation baffle and a fixing tool;
[0010] After the growth of silicon carbide is completed, the fixing tooling and isolation baffles on the side of the graphite substrate are removed;
[0011] The graphite matrix is removed to obtain two silicon carbide substrates.
[0012] According to the second aspect of an embodiment of the present application, a silicon carbide substrate manufacturing tool is provided, comprising: two semicircular toolings; the ends of the two toolings are butted together to surround the outside of a graphite substrate; the inner side surface of the tooling is provided with a protrusion that matches the groove provided on the outer side surface of the graphite substrate, and the protrusion can be inserted into the groove through an isolation baffle.
[0013] The technical solution provided in the embodiment of the present application is as follows: first, a groove is machined on the side of the graphite substrate; an isolation baffle is surrounded on the side of the graphite substrate; a fixing tool is surrounded on the outside of the isolation baffle; the inner side of the fixing tool is provided with a protrusion matching the groove, and the protrusion is inserted into the groove to press the isolation baffle onto the graphite substrate; silicon carbide is grown on the upper and lower surfaces of the graphite substrate surrounded by the isolation baffle and the fixing tool; after the growth of silicon carbide is completed, the fixing tool and isolation baffle on the side of the graphite substrate are removed; the graphite substrate is removed to obtain two silicon carbide substrates, and there is no need to cut off the hard silicon carbide material with a grinding wheel, thereby simplifying the process difficulty, shortening the production time, and greatly reducing the production cost. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:
[0015] Figure 1 A flow chart of a method for manufacturing a silicon carbide substrate provided in an embodiment of the present application;
[0016] Figure 2 An exploded view of a graphite substrate, an isolation baffle, and a fixing tool in a method for manufacturing a silicon carbide substrate provided in an embodiment of the present application;
[0017] Figure 3 A schematic diagram of the structure in which a fixed tool presses an isolation baffle against a side of a graphite substrate in a method for manufacturing a silicon carbide substrate provided in an embodiment of the present application;
[0018] Figure 4 A schematic diagram of the structure of growing silicon carbide on the upper and lower surfaces of a graphite substrate in a method for manufacturing a silicon carbide substrate provided in an embodiment of the present application;
[0019] Figure 5 A schematic diagram of the structure of removing the isolation baffle and the fixing tool in the method for manufacturing a silicon carbide substrate provided in an embodiment of the present application;
[0020] Figure 6 A schematic diagram of the structure of obtaining a silicon carbide substrate by removing a graphite substrate in the method for manufacturing a silicon carbide substrate provided in an embodiment of the present application;
[0021] Figure 7A schematic diagram of the structure of the fixing tool provided in an embodiment of the present application.
[0022] Reference numerals:
[0023] 1-graphite substrate; 11-groove; 2-isolation baffle; 3-fixing tool; 31-protrusion; 4-silicon carbide. DETAILED DESCRIPTION
[0024] In order to make the technical solutions and advantages in the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than an exhaustive list of all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.
[0025] The present embodiment provides a method for manufacturing a silicon carbide substrate, which can manufacture a silicon carbide substrate based on a graphite substrate, and the implementation process is relatively simple, the process time is short, the efficiency is high and the cost is low.
[0026] like Figure 1 As shown, the method for manufacturing a silicon carbide substrate provided in this embodiment includes:
[0027] Step 101: Processing a groove on the side of the graphite substrate.
[0028] The graphite substrate 1 is generally in the shape of a disk, with circular upper and lower surfaces and arc-shaped side surfaces. A groove 11 is machined on the side surface of the graphite substrate 1, and the shape of the groove 11 can be various, for example, the cross section of the groove 11 is rectangular, arc-shaped, trapezoidal, V-shaped, etc., and the V-shaped is used as an example in the accompanying drawings of this embodiment.
[0029] The number of the grooves 11 can be one, two or more than three. The drawings of this embodiment take one groove 11 as an example. The groove 11 is an annular groove arranged along the circumference of the graphite substrate 1 and is located in the middle of the side surface of the graphite substrate 1.
[0030] Step 102: surround the side of the graphite substrate with an isolation baffle.
[0031] Step 103, a fixing tool is arranged around the outside of the isolation baffle; a protrusion matching the groove is arranged on the inner side of the fixing tool, and the protrusion is inserted into the groove to press the isolation baffle onto the graphite substrate.
[0032] like Figure 2 and Figure 3 As shown, in the above two steps, an isolation baffle 2 is placed on the side of the graphite substrate 1. The isolation baffle 2 is used to isolate the graphite substrate 1 and the fixed tooling so that the two do not react and can be separated smoothly in the subsequent separation step.
[0033] The fixing tool 3 is placed outside the isolation baffle 2, and a protrusion 31 is provided on the inner side of the fixing tool 3. The shape and size of the protrusion 31 match the groove 11 on the graphite substrate 1. The fixing tool 3 can be arranged around the outer side of the graphite substrate 1 and the protrusion 31 is inserted into the groove 11, so that the isolation baffle 2 is pressed between the graphite substrate 1 and the fixing tool 3. The protrusion 31 matches the shape of the above-mentioned groove 11. In this embodiment, the protrusion 31 is also V-shaped and is located in the middle of the inner side of the fixing tool 3.
[0034] Step 104: growing silicon carbide on the upper surface and the lower surface of the graphite substrate surrounded by the isolation baffle and the fixing fixture.
[0035] like Figure 4 As shown, after the isolation baffle 2 and the fixing fixture 3 are clamped, silicon carbide is grown on the upper surface and the lower surface of the graphite substrate 1.
[0036] One implementation method is: put a graphite substrate 1 surrounded by an isolation baffle 2 and a fixing tool 3 into a reaction furnace, then control the temperature in the furnace at 1200°C-1400°C, introduce methyltrichlorosilane CH3SiCl3 gas, hydrogen H2, and argon Ar into the reaction furnace, and specifically grow silicon carbide 4 on the upper and lower surfaces of the graphite substrate 1 in a 1350°C environment.
[0037] Step 105: After the growth of silicon carbide is completed, the fixing fixture and isolation baffle on the side of the graphite substrate are removed.
[0038] like Figure 5 As shown, after the above step 104, the graphite substrate 1 with silicon carbide grown thereon is taken out of the reaction furnace, cooled to room temperature, and then the fixing tool 3 and the isolation baffle 2 on the side of the graphite substrate 1 are removed. Due to the existence of the isolation baffle 2, the fixing tool 3 can be directly separated from the graphite substrate 1, which is simple and easy to implement.
[0039] Step 106: remove the graphite matrix to obtain two silicon carbide substrates.
[0040] This step can be performed in a variety of physical or chemical ways. One implementation method is: putting a graphite substrate 1 with silicon carbide 4 on the surface into a muffle furnace, and then introducing oxygen O2 into the muffle furnace. The graphite substrate is converted into carbon dioxide under high temperature environment, and the graphite substrate 1 is removed to obtain two silicon carbide substrates, such as Figure 6 shown.
[0041] The technical solution provided in this embodiment is as follows: first, a groove is machined on the side of the graphite substrate; an isolation baffle is surrounded on the side of the graphite substrate; a fixed tool is surrounded on the outside of the isolation baffle; the inner side of the fixed tool is provided with a protrusion matching the groove, and the protrusion is inserted into the groove to press the isolation baffle onto the graphite substrate; silicon carbide is grown on the upper and lower surfaces of the graphite substrate surrounded by the isolation baffle and the fixed tool; after the growth of silicon carbide is completed, the fixed tool and isolation baffle on the side of the graphite substrate are removed; the graphite substrate is removed to obtain two silicon carbide substrates, and there is no need to cut off the hard silicon carbide material with a grinding wheel, thereby simplifying the process difficulty, shortening the production time, and greatly reducing the production cost.
[0042] The isolation baffle 2 can be made of a deformable flexible sheet made of a material that does not react with the graphite substrate 1 and the fixing fixture, such as graphite paper.
[0043] Based on the above technical solution, the size of the isolation baffle 2 is larger so that the upper and lower ends of the isolation baffle 2 can be bent outward to cover the upper and lower surfaces of the fixed tooling 3, thereby shielding the fixed tooling 3 to prevent subsequent processes from damaging the surface of the fixed tooling.
[0044] Furthermore, the thickness of the fixture 3 is smaller than the thickness of the graphite substrate 1 , so that the fixture 3 will not block the flow of gas during the growth of silicon carbide, allowing the gas to fully contact the upper and lower surfaces of the graphite substrate 1 .
[0045] like Figure 7 As shown, this embodiment also provides an implementation of a fixing fixture 3, which is two semicircular fixtures, which surround the outside of the graphite substrate 1, and the two ends of the two semicircular fixtures are butted. In order to apply a pressing force to the graphite paper, a pressing member can be additionally used to press the two semicircular fixtures close to each other.
[0046] The inner side of the fixing tool 3 is provided with a protrusion 31 , the cross section of which is V-shaped and is located in the middle of the inner side of the semicircular tool, corresponding to the groove 11 on the side of the graphite substrate 1 , and the protrusion 31 is inserted into the groove 11 through the graphite paper 2 .
[0047] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0048] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0049] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0050] Although the preferred embodiments of the present application have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the present application.
[0051] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.
Claims
1. A method for manufacturing a silicon carbide substrate, characterized in that: include: machining grooves on the side of the graphite substrate; Enclosing the isolation baffle on the side of the graphite substrate; The fixing tool is arranged around the outside of the isolation baffle; the inner side of the fixing tool is provided with a protrusion matching the groove, and the protrusion is inserted into the groove to press the isolation baffle onto the graphite substrate; Silicon carbide is grown on the upper and lower surfaces of a graphite substrate surrounded by an isolation baffle and a fixing tool; After the growth of silicon carbide is completed, the fixing tooling and isolation baffles on the side of the graphite substrate are removed; The graphite matrix is removed to obtain two silicon carbide substrates.
2. The method according to claim 1, characterized in that: Silicon carbide is grown on the upper and lower surfaces of a graphite substrate surrounded by an isolation baffle and a fixing tool, comprising: Putting the graphite substrate surrounded by isolation baffles and fixing fixtures into the reaction furnace; Control the temperature in the furnace at 1200℃-1400℃; Methyltrichlorosilane gas, hydrogen gas and argon gas are introduced into the reaction furnace to grow silicon carbide on the upper surface and the lower surface of the graphite substrate.
3. The method according to claim 1, characterized in that The graphite substrate is removed to obtain two silicon carbide substrates including: The graphite substrate with silicon carbide on the surface is placed in a muffle furnace; Oxygen is introduced into the muffle furnace to remove the graphite matrix to obtain two silicon carbide substrates.
4. The method according to claim 1, characterized in that: The isolation baffle is graphite paper.
5. The method according to claim 1, characterized in that The groove is an annular groove surrounding the side surface of the graphite substrate.
6. The method according to claim 5, characterized in that The cross section of the groove is "V"-shaped and is located in the middle of the side surface of the graphite substrate.
7. The method according to claim 6, characterized in that The fixed fixtures are two semicircular fixtures; the two semicircular fixtures surround the outside of the graphite substrate, and the two ends of the two semicircular fixtures are butt-jointed; The cross section of the protrusion is "V"-shaped and is located in the middle of the inner side of the semicircular tooling.
8. The method according to claim 1, characterized in that The thickness of the fixing tool is smaller than the thickness of the graphite substrate.
9. A silicon carbide substrate manufacturing tool, characterized in that: include: Two semicircular toolings; the ends of the two toolings are butt-jointed and used to surround the outside of the graphite substrate; the inner side of the tooling is provided with a protrusion matching the groove arranged on the outer side of the graphite substrate, and the protrusion can be inserted into the groove through the isolation baffle.
10. The manufacturing tool according to claim 9, characterized in that: The cross section of the protrusion is "V"-shaped and is located in the middle of the inner side of the semicircular tooling.