Method and device for detecting organic pollutants on wafer surface

Abstract

The invention discloses a method and a device for detecting organic pollutants on the surface of a wafer. The wafer comprises a substrate and a functional layer, the detection method comprises the following steps: carrying out thickness characterization on a functional layer of a preset area of a wafer to obtain a first thickness; ultraviolet light is adopted to irradiate the functional layer in the preset area, and surface treatment is conducted on the functional layer in the preset area; performing thickness characterization on the functional layer of the preset area of the wafer again to obtain a second thickness; and comparing an absolute value of a difference value between the first thickness and the second thickness with a first threshold value to judge whether organic pollutants exist on the surface of the functional layer of the wafer or not. By adopting the technical scheme, the organic pollutants on the surface of the wafer can be effectively detected.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a method and a device for detecting organic pollutants on a wafer surface. Background Art

[0002] With the continuous development of the semiconductor industry, semiconductor manufacturing technology has entered the nano era, and the quality requirements for the surface of semiconductor wafers are becoming higher and higher, requiring the wafer surface to be flat, smooth, and clean without contaminant particles.

[0003] It is difficult for existing film thickness testing equipment to characterize potential organic contamination films on the surface of silicon wafers when the film composition is unknown, which can easily cause yield loss in subsequent processing. Summary of the invention

[0004] The present invention provides a method and a device for detecting organic pollutants on the surface of a wafer, so as to effectively detect the organic pollutants on the surface of the wafer.

[0005] According to one aspect of the present invention, a method for detecting organic pollutants on a wafer surface is provided, wherein the wafer comprises a substrate and a functional layer; the detection method comprises:

[0006] Characterizing the thickness of the functional layer in a preset area of ​​the wafer to obtain a first thickness;

[0007] Irradiating the functional layer in the preset area with ultraviolet light to perform surface treatment on the functional layer in the preset area;

[0008] Characterizing the thickness of the functional layer in the preset area of ​​the wafer again to obtain a second thickness;

[0009] The absolute value of the difference between the first thickness and the second thickness is compared with a first threshold value to determine whether the organic pollutant exists on the surface of the functional layer of the wafer.

[0010] Optionally, an ellipsometer is used to characterize the thickness of the functional layer in a preset area of ​​the wafer;

[0011] The first threshold is greater than or equal to a maximum error value of the ellipsometer.

[0012] Optionally, characterizing the thickness of the functional layer in a preset area of ​​the wafer to obtain a first thickness includes:

[0013] A first scanning model is established according to the substrate, the functional layer and the transition layer, and a first target thickness is set; wherein the transition layer includes the functional layer and air, and the proportion of the functional layer is a first preset proportion;

[0014] Detecting the functional layer and the transition layer in the preset area to obtain the first thickness and the first actual spectrum;

[0015] Obtaining a first theoretical spectrum according to the first thickness and the first scanning model;

[0016] Determining whether a first degree of fit between the first theoretical spectrum and the first actual spectrum is greater than or equal to a second threshold;

[0017] If the first degree of fit is greater than or equal to the second threshold, the first thickness is output.

[0018] Optionally, if the first degree of fit is less than the second threshold, the first preset proportion is modified according to a first preset rule, and the step of establishing a first scanning model based on the substrate, the functional layer and the transition layer is returned to be executed.

[0019] Optionally, characterizing the thickness of the functional layer in the preset area of ​​the wafer again to obtain a second thickness includes:

[0020] Establishing a second scanning model according to the substrate and the functional layer, and setting a second target thickness;

[0021] Detecting the functional layer in the preset area to obtain the second thickness and the second actual spectrum;

[0022] obtaining a second theoretical spectrum according to the second thickness and the second scanning model;

[0023] Determining whether a second degree of fit between the second theoretical spectrum and the second actual spectrum is greater than or equal to a second threshold;

[0024] If the second degree of fit is greater than or equal to the second threshold, the second thickness is output.

[0025] Optionally, if the second degree of fit is less than the second threshold, a second scanning model is established based on the substrate, the functional layer and the transition layer, and a second target thickness is set, and the step of returning to execute detection of the functional layer in the preset area to obtain the second thickness and the second actual spectrum.

[0026] Optionally, the preset area includes a plurality of sub-areas; the absolute value of the difference between the first thickness and the second thickness of each sub-area is the thickness change value of each sub-area;

[0027] Comparing the absolute value of the difference between the first thickness and the second thickness with a first threshold value to detect whether the organic pollutant exists on the surface of the functional layer of the wafer, comprises:

[0028] The thickness variation value of each of the sub-regions is compared with the first threshold value to determine whether the organic pollutant exists on the surface of the functional layer of the wafer.

[0029] According to another aspect of the present invention, a device for detecting organic contaminants on a wafer surface is provided, wherein the wafer comprises a substrate and a functional layer; the detection device is used to perform the method for detecting organic contaminants on a wafer surface according to any embodiment of the present invention; the detection device comprises:

[0030] A first detection module is used to characterize the thickness of the functional layer in a preset area of ​​the wafer to obtain a first thickness;

[0031] a surface treatment module, used for irradiating the functional layer of the preset area with ultraviolet light to perform surface treatment on the functional layer of the preset area;

[0032] A second detection module is used to characterize the thickness of the functional layer in the preset area of ​​the wafer again to obtain a second thickness;

[0033] The judging module is used to compare the absolute value of the difference between the first thickness and the second thickness with a first threshold value to judge whether the organic pollutant exists on the surface of the functional layer of the wafer.

[0034] According to another aspect of the present invention, there is provided an electronic device, the electronic device comprising:

[0035] at least one processor; and a memory communicatively coupled to the at least one processor;

[0036] Among them, the memory stores a computer program that can be executed by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the method for detecting organic contaminants on the wafer surface described in any embodiment of the present invention.

[0037] According to another aspect of the present invention, a computer-readable storage medium is provided, wherein the computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to implement the method for detecting organic contaminants on a wafer surface as described in any embodiment of the present invention when executed.

[0038] The technical solution of the present invention can obtain thickness changes before and after ultraviolet light irradiation by performing a thickness characterization on the wafer before ultraviolet light irradiation and performing a thickness surface characterization on the wafer again after ultraviolet light irradiation, thereby realizing monitoring of organic pollutants on the wafer surface, which is beneficial to early detection of organic pollutants during the production process, and wafers with organic pollutants can be processed in time, which is beneficial to improving product quality and reducing yield loss; in addition, in the process of monitoring organic pollutants on the wafer surface, no damage is caused to the wafer itself, which is beneficial to the production and processing of the wafer in subsequent steps.

[0039] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0041] Figure 1 This is a flow chart of a method for detecting organic pollutants on a wafer surface provided in Embodiment 1 of the present invention;

[0042] Figure 2 This is a flow chart of a method for detecting organic pollutants on a wafer surface provided in Embodiment 2 of the present invention;

[0043] Figure 3 A schematic diagram of the structure of a device for detecting organic pollutants on a wafer surface provided in a third embodiment of the present invention;

[0044] Figure 4 A schematic diagram of the structure of an electronic device that can be used to implement an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0045] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0046] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0047] Embodiment 1

[0048] Figure 1 This is a flow chart of a method for detecting organic contaminants on a wafer surface provided in the first embodiment of the present invention. This embodiment can be applied to monitoring the presence or absence of organic contaminants in the production process of forming a functional layer on the wafer surface. The method can be performed by a detection device for organic contaminants on the wafer surface. The detection device can be implemented in the form of hardware and / or software, and the detection device can be configured in an automated production device. Figure 1 As shown, the method includes:

[0049] S1001, characterize the thickness of a functional layer in a preset area of ​​a wafer to obtain a first thickness.

[0050] Among them, the wafer includes a substrate and a functional layer. The substrate refers to the wafer used to make semiconductor devices and semiconductor circuits. The original material includes but is not limited to silicon. The functional layer can be a film layer used to form semiconductor devices and semiconductor circuits, or a film layer used to protect and space semiconductor devices and semiconductor circuits. The functional layer includes but is not limited to oxide layers, nitride layers, metal layers and other film layers. By forming multiple functional layers on the substrate, semiconductor devices and semiconductor circuits can be prepared on the substrate to realize functions such as information processing, data storage, and sensing.

[0051] The preset area may be a plurality of areas distributed at various positions of the wafer, or may be an area set based on past experience where organic pollutants are prone to appear.

[0052] If there are organic pollutants on the surface of the functional layer in the preset area, the first thickness is the sum of the thicknesses of the functional layer and the organic pollutants; if there are no organic pollutants on the surface of the functional layer in the preset area, the first thickness is the thickness of the functional layer.

[0053] S1002, irradiating the functional layer in the preset area with ultraviolet light to perform surface treatment on the functional layer in the preset area.

[0054] For example, ultraviolet light with a wavelength of 100nm-400nm can be used to irradiate the entire surface of the wafer for 5min-10min; or ultraviolet light with a wavelength of 100nm-400nm can be used to irradiate the surface of the functional layer in a preset area for 5min-10min. Ultraviolet light can destroy and decompose organic pollutants. After the organic pollutants on the surface of the wafer are irradiated by ultraviolet light, their chemical bonds are broken, resulting in a reduction in thickness, and even the thickness of some organic pollutants can be reduced to zero.

[0055] S1003 , characterize the thickness of the functional layer in the preset area of ​​the wafer again to obtain a second thickness.

[0056] The second thickness is the thickness of the functional layer in the preset area, or is the sum of the thickness of the functional layer in the preset area and the organic pollutant after thinning.

[0057] S1004 , comparing the absolute value of the difference between the first thickness and the second thickness with a first threshold value to determine whether there is organic contaminant on the surface of the functional layer of the wafer.

[0058] The first threshold value may be a value less than the thickness of the organic pollutant, or may be less than the change value of the organic pollutant thinning caused by ultraviolet light irradiation. For example, the thickness of the organic pollutant is generally about 1 nm, and the thickness of the organic pollutant after ultraviolet light irradiation may be about 0-0.7 nm for different organic pollutants, and the change value of the organic pollutant thinning caused by ultraviolet light irradiation is about 0.3 nm-1.0 nm, and the first threshold value may be a value less than 0.3 nm.

[0059] The absolute value of the difference between the first thickness and the second thickness is the change in the sum of the thicknesses of the functional layer and the organic pollutants after irradiation with ultraviolet light.

[0060] For example, if there are organic pollutants on the surface of the functional layer of the preset area, after ultraviolet light irradiation, the thickness of the organic pollutants will be reduced, so that the change value of the sum of the thickness of the functional layer and the organic pollutants is greater than the first threshold; if there are no organic pollutants on the surface of the functional layer of the preset area, after ultraviolet light irradiation, the thickness of the functional layer remains unchanged, and the change value of the thickness of the functional layer is less than the first threshold. In this way, when the absolute value of the difference between the first thickness and the second thickness is greater than the first threshold, it can be determined that there are organic pollutants on the surface of the functional layer of the preset area; when the absolute value of the difference between the first thickness and the second thickness is less than or equal to the first threshold, it can be determined that there are no organic pollutants on the surface of the functional layer of the preset area.

[0061] Among them, the thickness characterization of the functional layer of the preset area of ​​the wafer may make the first thickness obtained inaccurate because the composition of the organic contaminants is unknown. However, the purpose of the embodiment of the present invention is to monitor the thickness change. Even if the first thickness is not accurate, the thickness change can still be detected when organic contaminants are present, so as to achieve effective detection of organic contaminants.

[0062] In an optional implementation, an ellipsometer may be used to characterize the thickness of a functional layer in a preset area of ​​the wafer, and the first threshold is greater than or equal to a maximum error value of the ellipsometer.

[0063] Exemplarily, if the detection error of the ellipsometer is ±0.02nm, the first threshold value can be 0.02nm, or it can also be 0.1nm, 0.15nm, etc. In this way, when monitoring the change in the sum of the thickness of the functional layer and the organic contaminants after ultraviolet light irradiation, when judging whether there are organic contaminants on the surface of the functional layer of the wafer, the thickness change caused by the detection error of the ellipsometer can be excluded, and the thickness change caused by ultraviolet light irradiation can be effectively detected, and based on this, it can be judged whether there are organic contaminants on the surface of the functional layer of the wafer.

[0064] In the first embodiment of the present invention, by performing a thickness characterization on the wafer before ultraviolet light irradiation and performing a thickness surface characterization on the wafer again after ultraviolet light irradiation, the thickness change before and after ultraviolet light irradiation can be obtained, thereby realizing the monitoring of organic pollutants on the wafer surface, which is beneficial to the early detection of organic pollutants in the production process, and the wafers with organic pollutants can be processed in time, which is beneficial to improving the quality of the product and reducing the yield loss; in addition, in the process of monitoring the organic pollutants on the wafer surface, the wafer itself will not be damaged, which is beneficial to the production and processing of the wafer in subsequent steps.

[0065] Optionally, the preset area includes multiple sub-areas; the absolute value of the difference between the first thickness and the second thickness of each sub-area is the thickness change value of each sub-area; the absolute value of the difference between the first thickness and the second thickness is compared with a first threshold to detect whether there are organic contaminants on the surface of the functional layer of the wafer, including: comparing the thickness change value of each sub-area with the first threshold to determine whether there are organic contaminants on the surface of the functional layer of the wafer.

[0066] Exemplarily, when the thickness variation value of any one or more sub-regions is greater than the first threshold value, it can be considered that there are organic pollutants on the surface of the functional layer of the wafer, which is conducive to improving the accuracy of the detection result.

[0067] Embodiment 2

[0068] Figure 21 is a flow chart of a method for detecting organic contaminants on a wafer surface provided by the second embodiment of the present invention. Compared with the above embodiment, the second embodiment of the present invention refines how to characterize thickness. Figure 2 As shown, the method includes:

[0069] S2001. Establish a first scanning model according to the substrate, the functional layer and the transition layer, and set a first target thickness; wherein the transition layer includes the functional layer and air, and the proportion of the functional layer is a first preset proportion.

[0070] Among them, the first preset proportion is greater than zero and less than 1.

[0071] Exemplarily, the thickness characterization can be performed by an ellipsometer, and a transition layer is provided to replace the organic pollutants of unknown composition. The transition layer can be a mixture of the functional layer and air, which is beneficial to improving the accuracy of thickness detection.

[0072] Wherein, the first target thickness is set, and when performing actual thickness detection, the thickness detection can be performed near the first target thickness starting from the first target thickness, which is conducive to rapid detection.

[0073] S2002 , detecting the functional layer and the transition layer in the preset area to obtain a first thickness and a first actual spectrum.

[0074] The first actual spectrum is a spectrum obtained during the actual detection process, the first actual spectrum corresponds to the first thickness, and the first thickness is the sum of the thicknesses of the functional layer and the transition layer.

[0075] Exemplarily, a spectral scan is performed on the functional layer of a preset area to obtain a first thickness and a first actual spectrum. At this time, the first thickness obtained by detection may not be very accurate, and it is necessary to verify whether the first thickness obtained by detection is accurate through subsequent steps, thereby indirectly verifying whether the transition layer set in S2001 is reasonable.

[0076] S2003. Obtain a first theoretical spectrum according to the first thickness and the first scanning model.

[0077] S2004: Determine whether a first degree of fit between the first theoretical spectrum and the first actual spectrum is greater than or equal to a second threshold. If yes, execute S2005.

[0078] Exemplarily, if the first degree of fit between the first theoretical spectrum and the first actual spectrum is greater than or equal to the second threshold, it means that the first thickness detected is relatively accurate, the transition layer set in S2001 is relatively reasonable, and the transition layer set in S2001 can more accurately detect the thickness of the functional layer and the organic pollutants.

[0079] If the first degree of fit between the first theoretical spectrum and the first actual spectrum is less than the second threshold, it means that the first thickness detected is not very accurate, and the transition layer set in S2001 is not reasonable. In an optional implementation, the first preset proportion of the transition layer can be modified according to the first preset rule, and S2001 is returned to be executed until the first degree of fit between the first theoretical spectrum and the first actual spectrum is greater than or equal to the second threshold. The second preset rule can be to increase or decrease the preset change amount based on the original first preset proportion, and the preset change amount can be greater than zero and less than or equal to 0.2, and the modified first preset proportion is greater than or equal to zero and less than or equal to 1.

[0080] S2005. Output the first thickness.

[0081] S2006, irradiating the functional layer in the preset area with ultraviolet light to perform surface treatment on the functional layer in the preset area.

[0082] S2007: Establish a second scanning model according to the substrate and the functional layer, and set a second target thickness.

[0083] Exemplarily, thickness characterization can be performed using an ellipsometer. After ultraviolet light is set, organic pollutants on the surface of the wafer are destroyed and decomposed. At this time, there may no longer be organic pollutants on the surface of the functional layer in a preset area of ​​the wafer, or there may be fewer organic pollutants. A transition layer may not be set, and the thickness of the functional layer can be directly detected.

[0084] Wherein, the second target thickness is set, and when performing actual thickness detection, the thickness detection can be performed near the second target thickness starting from the second target thickness, which is conducive to rapid detection. The second target thickness can be the same as the first target thickness or different, and the embodiment of the present invention does not limit this.

[0085] S2008 , detecting the functional layer in the preset area to obtain a second thickness and a second actual spectrum.

[0086] The second actual spectrum is a spectrum obtained during the actual detection process, the second actual spectrum corresponds to the second thickness, and the second thickness is the thickness of the functional layer.

[0087] Exemplarily, a spectral scan is performed on the functional layer of a preset area to obtain a second thickness and a second actual spectrum. At this time, the second thickness obtained by detection may not be accurate, and it is necessary to verify whether the second thickness obtained by detection is accurate through subsequent steps.

[0088] S2009. Obtain a second theoretical spectrum according to the second thickness and the second scanning model.

[0089] S2010: Determine whether a second degree of fit between the second theoretical spectrum and the second actual spectrum is greater than a second threshold. If yes, execute S2011.

[0090] Exemplarily, if the second degree of fit between the second theoretical spectrum and the second actual spectrum is greater than or equal to a second threshold, it means that the second thickness detected is relatively accurate.

[0091] If the first degree of fit between the second theoretical spectrum and the second actual spectrum is less than the second threshold, it means that the second thickness detected is not accurate, and there may still be more organic pollutants on the surface of the functional layer in the preset area of ​​the wafer. In an optional embodiment, a second scanning model can be established based on the substrate, the functional layer and the transition layer, wherein the transition layer includes the functional layer and air, and the proportion of the functional layer is the second preset proportion, and then return to execute S2008 until the second degree of fit between the second theoretical spectrum and the second actual spectrum is greater than or equal to the second threshold.

[0092] If, after adding the transition layer to establish the second scanning model, the first degree of fit between the second theoretical spectrum and the second actual spectrum is still less than the second threshold, the second preset proportion of the transition layer can be modified according to the second preset rule, and the process returns to S2008 until the second degree of fit between the second theoretical spectrum and the second actual spectrum is greater than or equal to the second threshold. The second preset rule can be to increase or decrease a preset change amount based on the original first preset proportion, and the preset change amount can be greater than zero and less than or equal to 0.2, and the modified second preset proportion is greater than or equal to zero and less than or equal to 1.

[0093] S2011. Output the second thickness.

[0094] S2012: Compare the absolute value of the difference between the first thickness and the second thickness with a first threshold value to determine whether there is organic contaminant on the surface of the functional layer of the wafer.

[0095] For example, when characterizing the thickness of a functional layer of a wafer, if there are organic contaminants on the surface of the functional layer, the thickness value obtained by directly characterizing the thickness of the functional layer may differ greatly from the actual value. By setting a transition layer to replace the organic contaminants, the accuracy of the thickness characterization results can be improved, and the actual spectrum obtained by the detection result is fitted with the theoretical spectrum, which can be used to verify the detection result, thereby further improving the accuracy of the thickness characterization results.

[0096] In the second embodiment of the present invention, a transition layer is provided to replace organic pollutants, so that the accuracy of thickness characterization results can be improved, thereby improving the accuracy of detection results and effectively detecting organic pollutants on the wafer surface.

[0097] Embodiment 3

[0098] Figure 3 This is a schematic diagram of the structure of a device for detecting organic pollutants on a wafer surface provided by Embodiment 3 of the present invention. Figure 3As shown, the device comprises:

[0099] A first detection module 310 characterizes the thickness of a functional layer in a preset area of ​​a wafer to obtain a first thickness;

[0100] The surface treatment module 320 is used to irradiate the functional layer of the preset area with ultraviolet light to perform surface treatment on the functional layer of the preset area;

[0101] A second detection module 330 is used to characterize the thickness of the functional layer in the preset area of ​​the wafer again to obtain a second thickness;

[0102] The judgment module 340 is used to compare the absolute value of the difference between the first thickness and the second thickness with a first threshold value to judge whether there is organic contaminant on the surface of the functional layer of the wafer.

[0103] Optionally, the first detection module 310 includes:

[0104] A first modeling unit is used to establish a first scanning model according to the substrate, the functional layer and the transition layer, and set a first target thickness; wherein the transition layer includes the functional layer and air, and the proportion of the functional layer is a first preset proportion;

[0105] A first detection unit, used to detect the functional layer and the transition layer in a preset area to obtain a first thickness and a first actual spectrum;

[0106] A first calculation unit, used for obtaining a first theoretical spectrum according to the first thickness and the first scanning model;

[0107] The first judgment unit is used to judge whether a first fit between the first theoretical spectrum and the first actual spectrum is greater than or equal to a second threshold, and output a first thickness when the first fit is greater than or equal to the second threshold.

[0108] Optionally, the first detection module 310 further includes:

[0109] The first adjustment unit is used to modify the first preset proportion according to the first preset rule when the first fitting degree is less than the second threshold value, and return to the first modeling unit.

[0110] Optionally, the second detection module 330 includes:

[0111] A second modeling unit, used for establishing a second scanning model according to the substrate and the functional layer, and setting a second target thickness;

[0112] A second detection unit is used to detect the functional layer in a preset area to obtain a second thickness and a second actual spectrum;

[0113] A second calculation unit, used for obtaining a second theoretical spectrum according to a second thickness and a second scanning model;

[0114] The second judgment unit is used to judge whether a second fit between the second theoretical spectrum and the second actual spectrum is greater than or equal to a second threshold, and output a second thickness when the second fit is greater than or equal to the second threshold.

[0115] Optionally, the second detection module 330 further includes:

[0116] The second adjustment unit is used to establish a second scanning model according to the substrate, the functional layer and the transition layer, set a second target thickness, and return to the second detection unit.

[0117] Optionally, the preset area includes a plurality of sub-areas; the absolute value of the difference between the first thickness and the second thickness of each sub-area is the thickness change value of each sub-area;

[0118] The judgment module 340 is further used to compare the thickness change value of each sub-region with the first threshold value to judge whether there is organic contaminant on the surface of the functional layer of the wafer.

[0119] The device for detecting organic pollutants on the surface of a wafer provided by an embodiment of the present invention can execute the method for detecting organic pollutants on the surface of a wafer provided by any embodiment of the present invention, and has functional modules and beneficial effects corresponding to the execution method.

[0120] Embodiment 4

[0121] Figure 4 A schematic diagram of an electronic device that can be used to implement an embodiment of the present invention is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device may also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or required herein.

[0122] like Figure 4As shown, the electronic device 10 includes at least one processor 11, and a memory connected to the at least one processor 11, such as a read-only memory (ROM) 12, a random access memory (RAM) 13, etc., wherein the memory stores a computer program that can be executed by at least one processor, and the processor 11 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 12 or the computer program loaded from the storage unit 18 to the random access memory (RAM) 13. In the RAM 13, various programs and data required for the operation of the electronic device 10 can also be stored. The processor 11, the ROM 12, and the RAM 13 are connected to each other through a bus 14. An input / output (I / O) interface 15 is also connected to the bus 14.

[0123] A number of components in the electronic device 10 are connected to the I / O interface 15, including: an input unit 16, such as a keyboard, a mouse, etc.; an output unit 17, such as various types of displays, speakers, etc.; a storage unit 18, such as a disk, an optical disk, etc.; and a communication unit 19, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 19 allows the electronic device 10 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0124] The processor 11 may be a variety of general and / or special processing components with processing and computing capabilities. Some examples of the processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 11 executes the various methods and processes described above, such as the method for detecting organic contaminants on the surface of a wafer provided by any embodiment of the present invention.

[0125] In some embodiments, the method for detecting organic contaminants on the surface of a wafer may be implemented as a computer program, which is tangibly contained in a computer-readable storage medium, such as a storage unit 18. In some embodiments, part or all of the computer program may be loaded and / or installed on the electronic device 10 via the ROM 12 and / or the communication unit 19. When the computer program is loaded into the RAM 13 and executed by the processor 11, one or more steps of the method for detecting organic contaminants on the surface of a wafer described above may be performed. Alternatively, in other embodiments, the processor 11 may be configured to execute the method for detecting organic contaminants on the surface of a wafer provided by any embodiment of the present invention in any other appropriate manner (e.g., by means of firmware).

[0126] Various implementations of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various implementations can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a special purpose or general purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0127] Computer programs for implementing the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that when the computer program is executed by the processor, the functions / operations specified in the flow chart and / or block diagram are implemented. The computer program may be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0128] In the context of the present invention, a computer-readable storage medium may be a tangible medium that may contain or store a computer program for use by or in combination with an instruction execution system, device or equipment. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices or equipment, or any suitable combination of the foregoing. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0129] To provide interaction with a user, the systems and techniques described herein may be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or trackball) through which the user can provide input to the electronic device. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0130] The systems and techniques described herein may be implemented in a computing system that includes backend components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes frontend components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such backend components, middleware components, or frontend components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0131] A computing system may include a client and a server. The client and the server are generally remote from each other and usually interact through a communication network. The client and server relationship is generated by computer programs running on the corresponding computers and having a client-server relationship with each other. The server may be a cloud server, also known as a cloud computing server or cloud host, which is a host product in the cloud computing service system to solve the defects of difficult management and weak business scalability in traditional physical hosts and VPS services.

[0132] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0133] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for detecting organic pollutants on a wafer surface, characterized in that: The wafer includes a substrate and a functional layer; the detection method includes: Characterizing the thickness of the functional layer in a preset area of ​​the wafer to obtain a first thickness; irradiating the functional layer in the preset area with ultraviolet light to perform surface treatment on the functional layer in the preset area; Characterizing the thickness of the functional layer in the preset area of ​​the wafer again to obtain a second thickness; An absolute value of a difference between the first thickness and the second thickness is compared with a first threshold value to determine whether the organic pollutant exists on the surface of the functional layer of the wafer.

2. The method for detecting organic pollutants on the surface of a wafer according to claim 1, characterized in that: Using an ellipsometer, characterizing the thickness of the functional layer in a predetermined area of ​​the wafer; The first threshold is greater than or equal to a maximum error value of the ellipsometer.

3. The method for detecting organic pollutants on the surface of a wafer according to claim 2, characterized in that: Characterizing the thickness of the functional layer in a preset area of ​​the wafer to obtain a first thickness includes: A first scanning model is established according to the substrate, the functional layer and the transition layer, and a first target thickness is set; wherein the transition layer includes the functional layer and air, and the proportion of the functional layer is a first preset proportion; Detecting the functional layer and the transition layer in the preset area to obtain the first thickness and the first actual spectrum; Obtaining a first theoretical spectrum according to the first thickness and the first scanning model; Determining whether a first degree of fit between the first theoretical spectrum and the first actual spectrum is greater than or equal to a second threshold; If the first degree of fit is greater than or equal to the second threshold, the first thickness is output.

4. The method for detecting organic pollutants on the surface of a wafer according to claim 3, characterized in that: If the first degree of fit is less than the second threshold, the first preset proportion is modified according to a first preset rule, and the process returns to the step of establishing a first scanning model according to the substrate, the functional layer and the transition layer.

5. The method for detecting organic pollutants on the surface of a wafer according to claim 2, characterized in that: Characterizing the thickness of the functional layer in the preset area of ​​the wafer again to obtain a second thickness includes: Establishing a second scanning model according to the substrate and the functional layer, and setting a second target thickness; Detecting the functional layer in the preset area to obtain the second thickness and the second actual spectrum; obtaining a second theoretical spectrum according to the second thickness and the second scanning model; Determining whether a second degree of fit between the second theoretical spectrum and the second actual spectrum is greater than or equal to a second threshold; If the second degree of fit is greater than or equal to the second threshold, the second thickness is output.

6. The method for detecting organic pollutants on the surface of a wafer according to claim 5, characterized in that: If the second degree of fit is less than the second threshold, a second scanning model is established based on the substrate, the functional layer and the transition layer, and a second target thickness is set, and the step of returning to execute detection of the functional layer in the preset area to obtain the second thickness and the second actual spectrum.

7. The method for detecting organic pollutants on the surface of a wafer according to claim 1, characterized in that: The preset area includes a plurality of sub-areas; the absolute value of the difference between the first thickness and the second thickness of each sub-area is the thickness change value of each sub-area; Comparing the absolute value of the difference between the first thickness and the second thickness with a first threshold value to detect whether the organic pollutant exists on the surface of the functional layer of the wafer, comprises: The thickness variation value of each of the sub-regions is compared with the first threshold value to determine whether the organic pollutant exists on the surface of the functional layer of the wafer.

8. A device for detecting organic pollutants on a wafer surface, characterized in that: The wafer comprises a substrate and a functional layer; the detection device is used to perform the method for detecting organic pollutants on the surface of the wafer according to any one of claims 1 to 7; The detection device comprises: A first detection module is used to characterize the thickness of the functional layer in a preset area of ​​the wafer to obtain a first thickness; a surface treatment module, used for irradiating the functional layer of the preset area with ultraviolet light to perform surface treatment on the functional layer of the preset area; A second detection module is used to characterize the thickness of the functional layer in the preset area of ​​the wafer again to obtain a second thickness; The judging module is used to compare the absolute value of the difference between the first thickness and the second thickness with a first threshold value to judge whether the organic pollutant exists on the surface of the functional layer of the wafer.

9. An electronic device, characterized in that: The electronic device comprises: at least one processor; and a memory communicatively coupled to the at least one processor; Wherein, the memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the method for detecting organic contaminants on the wafer surface according to any one of claims 1-7.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to implement the method for detecting organic contaminants on a wafer surface according to any one of claims 1 to 7 when executed.

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