Module structure of SIC power device and motor controller

Abstract

The invention belongs to the technical field of semiconductor heat dissipation materials, and discloses a module structure of an SIC power device and a motor controller. The module structure comprises a TPAK module, a heat dissipation bottom plate and an insulating film arranged between the TPAK module and the heat dissipation bottom plate. The TPAK module comprises a plurality of TPAK devices which are arranged according to a preset parallel connection mode, the insulating film is provided with a plurality of hollow areas, the positions and the sizes of the hollow areas are matched with those of the TPAK devices on the TPAK module, and the surface, close to the insulating film, of the heat dissipation bottom plate is provided with a plurality of sintering platforms. The TPAK device is connected with the sintering platform on the heat dissipation bottom plate through a hollow area arranged on the insulating film; the surface, away from the insulating film, of the heat dissipation bottom plate is provided with a pin area and a sealing area, the center of the pin area is provided with a reinforcing rib in a protruding mode, the reinforcing rib and the heat dissipation bottom plate are of an integrated structure, and the periphery of the reinforcing rib is provided with pin structures which are arranged in a pairwise crossed mode. The heat dissipation effect of the module structure can be improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor heat dissipation materials, and in particular to a module structure of a SIC power device and a motor controller. Background Art

[0002] Power devices refer to semiconductor devices that have the ability to handle high voltage and high current. They are the core components of new energy vehicle motor controllers and are used for the conversion and control of electric energy. In the field of new energy vehicles, common power devices mainly include diodes, thyristors, metal oxide semiconductor field effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). Although the application of power devices in the field of new energy vehicles has made significant progress, its development still faces many technical challenges. The existing motor controllers developed using MOS tubes and IGBT modules have a limited applicable voltage range and fail to meet the needs of high voltage; at the same time, due to the design of the structure and layout, the heat dissipation effect of the power device is poor, and the heat generated by the power device during operation is not taken away in time. Summary of the invention

[0003] To this end, the embodiments of the present application provide a module structure of a SIC power device and a motor controller, thereby improving the heat dissipation performance of the module.

[0004] In a first aspect, the present application provides a module structure of a SIC power device.

[0005] This application is achieved through the following technical solutions:

[0006] A module structure of a SIC power device, comprising:

[0007] A TPAK module, a heat dissipation base plate, and an insulating film disposed between the TPAK module and the heat dissipation base plate;

[0008] The TPAK module includes a plurality of TPAK devices arranged in a preset parallel form.

[0009] The insulating film is provided with a plurality of hollow areas, and the positions and sizes of the hollow areas match the TPAK devices on the TPAK module.

[0010] Several sintering platforms are arranged on the surface of the heat dissipation base plate close to the insulating film, and the TPAK device is connected to the sintering platform on the heat dissipation base plate through the hollow area opened on the insulating film;

[0011] A pinfin area and a sealing area are arranged on the surface of the heat dissipation base plate away from the insulating film. A reinforcing rib protrudes from the center of the pinfin area to form an integrated structure with the heat dissipation base plate. Pinfin structures arranged crosswise in pairs are arranged in the pinfin area except for the reinforcing ribs. The pinfin area is provided with a plurality of water guiding bosses.

[0012] In a preferred example of the present application, it can be further configured that at least one sensor mounting hole is provided on the surface of the heat dissipation base plate close to the insulating film.

[0013] In a preferred example of the present application, it can be further configured that a disturbance boss is provided on the outer side of the reinforcing rib, and the edge of the disturbance boss is in a repeatedly bent wave shape.

[0014] In a preferred example of the present application, it can be further configured that the pinfin structure is a water drop-shaped structure, and the pinfin structure gradually narrows from one end in the water inlet direction to one end in the water outlet direction.

[0015] In a preferred example of the present application, it can be further configured that the pinfin structure is an elliptical structure, and the ratio of the short axis to the long axis of the elliptical structure is 0.6 to 0.7.

[0016] In a preferred example of the present application, it can be further configured that the pinfin structure is a lemon-shaped structure.

[0017] In a preferred example of the present application, it can be further configured that a circle of transition platforms is provided on the periphery of the pinfin area, and the width of the transition platform is 0.5 mm and the height is 0.2 mm.

[0018] In a preferred example of the present application, it can be further configured that the insulating film is a polyimide film, and the polyimide film includes a film layer and a glue layer;

[0019] The adhesive layer is attached to the heat dissipation base plate, and the film layer is attached to the TPAK module.

[0020] In a preferred example of the present application, it can be further configured that the TPAK devices on the TPAK module are arranged in any of the following ways:

[0021] One parallel layout, two parallel layout, three parallel layout or four parallel layout.

[0022] In a second aspect, the present application provides a motor controller.

[0023] This application is achieved through the following technical solutions:

[0024] A motor controller comprises the module structure as described in the first aspect.

[0025] In summary, compared with the prior art, the technical solution provided in the embodiment of the present application has at least the following beneficial effects:

[0026] The module structure proposed in this application includes a TPAK module, a heat dissipation base plate, and an insulating film arranged between the TPAK module and the heat dissipation base plate; the TPAK module includes a plurality of TPAK devices arranged in a preset parallel form, a plurality of hollow areas are provided on the insulating film, the position and size of the hollow areas match the TPAK devices on the TPAK module, a plurality of sintering platforms are provided on the surface of the heat dissipation base plate close to the insulating film, and the TPAK devices are connected to the sintering platforms on the heat dissipation base plate through the hollow areas provided on the insulating film; a pinfin area and a sealing area are provided on the surface of the heat dissipation base plate away from the insulating film, and a reinforcing rib protrudes from the center of the pinfin area to form an integral structure with the heat dissipation base plate, and a pinfin structure arranged in pairs is provided in the position other than the reinforcing rib in the pinfin area. The module structure can improve the high power demand of the module through multi-tube parallel TPAK devices, and meet the demand of the high voltage platform when applied to the motor controller; the design of the pinfin area of ​​the heat dissipation base plate not only improves the heat dissipation performance, can promptly take away the heat generated by the power module, but also enhances the mechanical stability of the entire module, which helps to reduce the external physical pressure and vibration. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A schematic structural diagram of a module structure of a SIC power device provided in one embodiment of the present application;

[0028] Figure 2 A schematic diagram of the structure of a heat dissipation base plate provided in an embodiment of the present application;

[0029] Figure 3 A schematic diagram of the structure of a pinfin structure provided in one embodiment of the present application;

[0030] Figure 4 A schematic structural diagram of a water drop-shaped pinfin structure provided in one embodiment of the present application;

[0031] Figure 5 A schematic structural diagram of an elliptical pinfin structure provided in one embodiment of the present application;

[0032] Figure 6 A schematic structural diagram of a lemon-shaped pinfin structure provided in one embodiment of the present application;

[0033] Figure 7 A schematic diagram of a parallel layout of TPAK devices provided in an embodiment of the present application;

[0034] Figure 8 A schematic diagram of a parallel layout of two TPAK devices provided in an embodiment of the present application;

[0035] Fig. 9 A schematic diagram of a structure of three parallel TPAK devices provided in an embodiment of the present application;

[0036] Fig.10 A schematic diagram of a structure of a four-parallel layout of TPAK devices provided in an embodiment of the present application;

[0037] Description of reference numerals:

[0038] TPAK module-1, insulating film-2, heat dissipation base plate-3, TPAK device-101, hollow area-201, sintering platform-301, pinfin area-302, sealing area-303, pinfin structure-304, reinforcing rib-305, water guide boss-306, sensor mounting hole-4, disturbance boss-5. DETAILED DESCRIPTION

[0039] This specific embodiment is merely an explanation of the present application and is not a limitation of the present application. After reading this specification, those skilled in the art may make modifications to the present embodiment without any creative contribution as needed, but such modifications are protected by the patent law as long as they are within the scope of the claims of the present application.

[0040] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0041] In addition, the term "and / or" in this application is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this application, unless otherwise specified, generally indicates that the associated objects before and after are in an "or" relationship.

[0042] In this application, the terms "first", "second", etc. are used to distinguish identical or similar items with basically the same effects and functions. It should be understood that there is no logical or temporal dependency between "first", "second", and "nth", nor is there any limitation on quantity and execution order.

[0043] The embodiments of the present application are further described in detail below in conjunction with the accompanying drawings. Figure 1 and 2 As shown, the present application proposes a module structure of a SIC power device, the module structure comprising:

[0044] A TPAK module 1, a heat dissipation base plate 3 and an insulating film 2 arranged between the TPAK module and the heat dissipation base plate; the TPAK module 1 includes a plurality of TPAK devices 101 arranged in a preset parallel form, a plurality of hollow areas 201 are provided on the insulating film 2, and the position and size of the hollow areas 201 match the TPAK devices 101 on the TPAK module 1; a plurality of sintering platforms 301 are provided on the surface of the heat dissipation base plate 3 close to the insulating film 2, and the TPAK devices 101 are connected to the sintering platforms 301 on the heat dissipation base plate 3 through the hollow areas 201 provided on the insulating film 2; a pinfin area 302 and a sealing area 303 are provided on the surface of the heat dissipation base plate 3 away from the insulating film 2, a reinforcing rib 305 which forms an integral structure with the heat dissipation base plate 3 is protruded from the center of the pinfin area 302, and pinfin structures 304 arranged in pairs are arranged around the reinforcing rib 305.

[0045] Specifically, the TPAK device 101 on the TPAK module 1 includes an upper bridge TPAK and a lower bridge TPAK, which are connected by a copper busbar, and the copper busbars are bonded by laser welding technology to make the connection points more firm and reliable, while reducing contact resistance and parasitic inductance. The TPAK device 101 adopts SIC TPAK, which has source, gate and drain terminals. The substrate of the TPAK module 1 adopts an AMB (Active Metal Brazing Ceramic Substrate) ceramic substrate, which uses active metal solder to achieve bonding between copper foil and ceramic substrate, and has the characteristics of small parasitic parameters, low thermal resistance and high current density.

[0046] The insulating film 2 is made of high temperature resistant insulating material, and is used for insulation between the pins of the TPAK device 101 and the heat dissipation base plate 3. Specifically, the insulating film 2 can be made of a polyimide film (PI), which includes a film layer and a glue layer; wherein the glue layer faces the heat dissipation base plate 3, the film layer faces the TPAK module 1, and the insulating film 2 is attached to the heat dissipation base plate 3 through the glue layer. Specifically, the polyimide film also meets the following conditions: the withstand voltage coefficient is not less than 240KV / mm, that is, the polyimide film per millimeter thickness can withstand a voltage of up to 240KV without being broken down, the temperature resistance coefficient is not less than 200°C, the total thickness of the insulating film is 75μm, the thickness of the film layer is 50μm, and the thickness of the glue layer is 25μm.

[0047] The positions on the insulating film 2 corresponding to the TPAK device 101 and the sintering platform 301 of the TPAK module 1 need to be hollowed out to form a hollow area 201, and the size of the hollow area 201 is the same as the size of the TPAK device 101 and the size of the sintering platform 301 on the heat dissipation base plate 3. The hollow area 201 matching the shape and position of the TPAK device 101 and the sintering platform 301 is manufactured on the insulating film 2 to ensure that the connection between the TPAK device 101 and the sintering platform 301 will not be affected by the insulating film 2. In order to ensure that the TPAK device 101 can better transfer the generated heat to the heat dissipation base plate 3, the bottom of the TPAK device 101 and the sintering platform 301 are connected by sintering silver or reflow soldering. The sintering platform 301 is set on the side close to the insulating film 2. In order to reduce thermal resistance and not affect the bonding of the insulating film 2, the height of the preferred sintering platform 301 is 0.1mm.

[0048] A pinfin area 302 and a sealing area 303 are provided on the surface of the heat dissipation base plate 3 away from the insulating film 2. The pinfin area 302 is located in the middle area of ​​the heat dissipation base plate 3, and the area surrounding the pinfin area 302 belongs to the sealing area 303. The pinfin area 302 is formed by a mold; the sealing area 303 is machined, such as milling, to ensure the roughness and flatness of the sealing surface. Machining can accurately remove materials and only process the required parts, which can reduce unnecessary material removal and improve material utilization.

[0049] The pinfin area 302 is used to install the pinfin structure 304, which is a pin-fin structure for heat dissipation, which improves the heat conduction efficiency by increasing the surface area of ​​the heat dissipation base. The pinfin structure 304 protrudes from the heat dissipation base 3 and can directly contact the coolant in the cooling system, thereby increasing the flow of coolant flowing through the heat dissipation base 3 and improving the heat dissipation efficiency. Good heat dissipation performance helps to reduce the operating temperature of the power module, thereby improving the reliability and life of the module. Preferably, the heat dissipation base 3 is made of AL6063-T5 aluminum alloy material, and the density of AL6063-T5 is 2.71kg / m 3 , the thermal conductivity is about 209W / mK. AL6063-T5 aluminum alloy has high thermal conductivity, and its low density can also reduce the weight of the heat dissipation base plate 3. At the same time, its relatively low price can reduce costs.

[0050] In order to ensure that the heat dissipation base plate 3 has sufficient strength, a reinforcing rib 305 is set in the middle position of the pinfin area 302 of the heat dissipation base plate 3. The reinforcing rib 305 is set along the length direction of the heat dissipation base plate 3. Specifically, the reinforcing rib 305 is set on the back of the gap area between the upper row of sintering bosses and the lower row of sintering bosses. The reinforcing rib 305 is an integral structure with the heat dissipation base plate 3 and has the same material as the heat dissipation base plate 3. The existence of the reinforcing rib 305 plays a role in structural reinforcement. At the same time, it can also effectively divert the coolant of the cooling system, so that the coolant flows more evenly from the bottom of the TPAK module 1 to achieve better heat dissipation effect. By changing the flow direction of the coolant and increasing the flow path through the reinforcing rib 305, it is helpful to achieve more uniform heat exchange and reduce the formation of hot spot areas. The pinfin area 302 is provided with a plurality of water guide bosses 306. Preferably, the number of water guide bosses 306 is set to 4, evenly distributed around the reinforcing rib. At the end of the radiator, the fluid may form a vortex and generate bubbles during the flow, which will reduce the heat exchange efficiency because the fluid in the vortex area hardly flows and the bubbles hinder the heat exchange, and the heat cannot be effectively transferred. The water guide boss can help destroy the formation of vortices and promote the movement of bubbles, making the fluid flow more uniform and orderly, thereby improving the heat exchange efficiency.

[0051] In addition, the sealing area 303 of the heat dissipation base plate 3 is also provided with locking bolt holes and positioning pins, which are used to fix the heat dissipation base plate 3 through the locking bolt holes and positioning pins when the module structure is applied on the MCU.

[0052] In some embodiments, Figure 2 and 3 As shown, the gap area of ​​the sintering platform 301 is provided with at least one sensor mounting hole 4. The sensor mounting hole 4 is used to install an NTC temperature sensor, which is used to test the temperature of the heat dissipation base plate 3 corresponding to the TPAK device 101. The number of sensor mounting holes 4 can be set according to the temperature measurement requirements, and is generally set in the gap position between the two parallels according to the layout arrangement of the TPAK device.

[0053] In some preferred embodiments, such as Figure 2 and 3 As shown, a disturbance boss 5 is arranged outside the reinforcing rib 305, and the edge of the disturbance boss 5 is in a wave shape with repeated bends. The wave-shaped disturbance boss 5 can generate more fluid dynamic disturbances, which helps to disrupt the flow layer of the coolant, thereby improving the heat exchange efficiency. When the coolant flows through the disturbance boss 5, the wave-shaped edge forces the fluid to form a vortex, increasing the contact area and contact time between the fluid and the heat dissipation base plate, thereby improving the heat transfer efficiency.

[0054] In some preferred embodiments, Figure 3and Figure 4 As shown, the pinfin structure 304 is a water drop-shaped structure, and the pinfin structure 304 gradually narrows from one end of the water inlet direction to one end of the water outlet direction. It should be noted that the flow direction of the coolant in the cooling system is along the length direction of the heat dissipation base plate 3, and the left side can be set as the water inlet direction and the right side as the water outlet direction; the right side can also be set as the water inlet direction and the left side as the water outlet direction. The water drop-shaped structure can generate more fluid dynamic disturbances during the flow of the coolant. When the coolant flows through the water drop-shaped structure, this disturbance helps to disrupt the flow layer of the coolant, thereby improving the heat exchange efficiency.

[0055] In some preferred embodiments, Figure 5 As shown, the pinfin structure 304 is an elliptical structure, and the ratio of the short axis to the long axis of the elliptical structure is 0.6 to 0.7. Specifically, the long axis of the elliptical pinfin structure 304 is arranged along the water flow direction of the water inlet direction and the water outlet direction, and the short axis is arranged along the direction perpendicular to the water flow.

[0056] In some preferred embodiments, Figure 6 As shown, the pinfin structure 304 is a lemon-shaped structure. The lemon-shaped pinfin may generate more disturbances when the fluid flows, and this disturbance helps to disrupt the flow layer of the coolant and improve the heat exchange efficiency. The fluid disturbance can increase the chance of the fluid contacting the heat dissipation surface and improve the heat dissipation effect.

[0057] In some preferred embodiments, a transition platform is provided around the pinfin area, and the width of the transition platform is 0.5 mm and the height is 0.2 mm. The transition platform refers to a platform processed around the pinfin area, which can reduce the processing difficulty and increase the water flow disturbance.

[0058] Specifically, Figures 7 to 10 As shown, the TPAK devices 101 on the TPAK module 1 are arranged in any of the following ways: one parallel layout, two parallel layout, three parallel layout or four parallel layout. Figure 7 For TPAK devices 101 according to a parallel layout, Figure 8 For TPAK device 101, follow the two parallel layout, Fig. 9 For TPAK device 101, follow the three-parallel layout. Fig.10 The TPAK device 101 is arranged in four parallel connections. The topology layout of the TPAK module 1 is flexible, and the one-parallel, two-parallel, three-parallel, and four-parallel layout design of the TPAK can be flexibly implemented according to power requirements, thereby meeting the requirements of different currents and voltages, such as 340A / 750V, 400A / 750V, and 250A / 1200V, which can meet the high-voltage platform requirements of the 800V motor controller.

[0059] Another embodiment of the present application also provides a motor controller, which includes the above-mentioned module structure.

[0060] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0061] Those skilled in the art can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional units and modules is used as an example. In actual applications, the above-mentioned functions can be distributed and completed by different functional units and modules as needed, that is, the internal structure of the system described in the present application is divided into different functional units or modules to complete all or part of the functions described above.

Claims

1. A module structure of a SIC power device, characterized in that: include: A TPAK module, a heat dissipation base plate, and an insulating film disposed between the TPAK module and the heat dissipation base plate; The TPAK module includes a plurality of TPAK devices arranged in a preset parallel form. The insulating film is provided with a plurality of hollow areas, and the positions and sizes of the hollow areas match the TPAK devices on the TPAK module. Several sintering platforms are arranged on the surface of the heat dissipation base plate close to the insulating film, and the TPAK device is connected to the sintering platform on the heat dissipation base plate through the hollow area opened on the insulating film; A pinfin area and a sealing area are arranged on the surface of the heat dissipation base plate away from the insulating film. A reinforcing rib protrudes from the center of the pinfin area to form an integrated structure with the heat dissipation base plate. Pinfin structures arranged crosswise in pairs are arranged in the pinfin area except for the reinforcing ribs. The pinfin area is provided with a plurality of water guiding bosses.

2. The module structure of the SIC power device according to claim 1, characterized in that: At least one sensor mounting hole is arranged on the surface of the heat dissipation base plate close to the insulating film.

3. The module structure of the SIC power device according to claim 1, characterized in that: A disturbance boss is arranged on the outer side of the reinforcing rib, and the edge of the disturbance boss is in a repeatedly bent wave shape.

4. The module structure of the SIC power device according to claim 1, characterized in that: The pinfin structure is a water drop-shaped structure, and the pinfin structure gradually narrows from one end in the water inlet direction to one end in the water outlet direction.

5. The module structure of the SIC power device according to claim 1, characterized in that: The pinfin structure is an elliptical structure, and the ratio of the short axis to the long axis of the elliptical structure is 0.6 to 0.

7.

6. The module structure of the SIC power device according to claim 1, characterized in that: The pinfin structure is a lemon-shaped structure.

7. The module structure of the SIC power device according to any one of claims 4 to 6, characterized in that: A circle of transition platforms is arranged around the pinfin area, and the width and height of the transition platforms are 0.5 mm and 0.2 mm respectively.

8. The module structure of the SIC power device according to claim 1, characterized in that: The insulating film is a polyimide film, and the polyimide film comprises a film layer and a glue layer; The adhesive layer is attached to the heat dissipation base plate, and the film layer is attached to the TPAK module.

9. The module structure of the SIC power device according to claim 1, characterized in that: The TPAK devices on the TPAK module are arranged in any of the following ways: One parallel layout, two parallel layout, three parallel layout or four parallel layout.

10. A motor controller, characterized in that: The motor controller comprises a module structure as described in any one of claims 1 to 9.

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