Integrated Micro-LED chip

Abstract

The integrated Micro-LED chip comprises a first sub-chip, a second sub-chip, a third sub-chip and a transparent conducting layer which are vertically and longitudinally stacked, the second sub-chip is arranged at the position between the height of the first sub-chip and the height of the third sub-chip, a first dielectric layer is arranged between the first sub-chip and the transparent conducting layer, and a second dielectric layer is arranged between the second sub-chip and the transparent conducting layer. A second dielectric layer is arranged between the first sub-chip and the second sub-chip, a third dielectric layer is arranged between the second sub-chip and the third sub-chip, and the projection of the third sub-chip in the horizontal direction does not intersect with the projection of the first sub-chip and the projection of the second sub-chip in the horizontal direction. The heat generated by the first sub-chip and the second sub-chip cannot be conducted downwards through the third sub-chip, the temperature rise of the third sub-chip is reduced, the light emitting performance of the third sub-chip is improved, and the service life of the third sub-chip is prolonged.

Description

Technical Field

[0001] The present invention belongs to the technical field of display, and in particular relates to an integrated Micro-LED chip. Background Art

[0002] Micro-LED display is a highly competitive next-generation display technology. It uses Micro-LED chips directly as the light-emitting pixel units of the display screen to achieve self-luminous display. Full-color display is an essential performance of display products. In recent years, with the continuous development of Micro-LED technology, the industrialization path of Micro-LED display has gradually become clear. The industry generally believes that near-eye displays such as AR display will become the first mass-produced application field of Micro-LED display. At present, the technical route of Micro-LED full-color display is divided into three categories: (1) Three-primary color Micro-LED chip array, using RGB three-primary color Micro-LED chips to arrange into pixel arrays to achieve full-color display. The characteristic of this solution is that all Micro-LED chips are used as light-emitting units, and no other light-emitting materials are required. This solution is mainly aimed at large-size, medium-resolution display applications such as televisions; (2) Blue light Micro-LED chip array combined with red and green light fluorescence conversion. Blue light Micro-LED chips are arranged into an array, and then according to the red, green and blue pixel points, red and green light fluorescent materials are coated on the upper surface of the Micro-LED chips corresponding to the red and green light pixels respectively. The fluorescent material absorbs the blue light emitted by the chip below it and converts it into red and green light in the form of photoluminescence. The pixel positions not coated with fluorescent material serve as blue light pixels, thereby realizing RGB full-color display. The main technical challenge of this solution is how to achieve a highly reliable and low-cost fluorescent conversion layer. (3) The three primary colors of red, green and blue Micro-LEDs are vertically stacked to form a full-color Micro-LED with a laminated structure. The red light Micro-LED epitaxial layer needs to be set at the bottom to ensure that the red light can pass through the blue and green epitaxial layers smoothly. The advantage is that the area of ​​a single pixel in the Micro-LED display can be reduced to achieve high-resolution display, which is especially suitable for near-eye display applications such as AR display.

[0003] The existing vertical stacked full-color Micro-LED technology solution faces the problem that the red light Micro-LED chip is seriously affected by the thermal effect. In the vertically stacked laminated structure single-chip full-color Micro-LED, the heat emitted by the blue and green light Micro-LEDs will be transferred to the substrate through the red light Micro-LED chip to achieve heat dissipation. However, the electro-optical conversion efficiency of the red light Micro-LED chip is low and the efficiency drops sharply with the increase of temperature. The existing vertical stacking structure will cause the red light Micro-LED chip to face many bottlenecks such as low efficiency, insufficient brightness, and wavelength red shift. Summary of the invention

[0004] In order to solve the above-mentioned technical problems in the prior art, the present application provides an integrated Micro-LED chip to solve the thermal effect problem faced by the red light Micro-LED chip.

[0005] The present invention proposes an integrated Micro-LED chip, including a first sub-chip, a second sub-chip, a third sub-chip and a transparent conductive layer stacked vertically, the second sub-chip is arranged at a position between the heights of the first sub-chip and the third sub-chip, a first dielectric layer is arranged between the first sub-chip and the transparent conductive layer, a second dielectric layer is arranged between the first sub-chip and the second sub-chip, a third dielectric layer is arranged between the second sub-chip and the third sub-chip, and there is no intersection between the horizontal projection of the third sub-chip and the horizontal projection of the first sub-chip and the second sub-chip. Through the specific sub-chip stacking structure and the dielectric layer setting, the horizontal projection of the third sub-chip has no intersection with other sub-chips, so that the heat generated by the first sub-chip and the second sub-chip will not be conducted downward through the third sub-chip, the temperature rise of the third sub-chip is reduced, the luminous performance and life of the third sub-chip are improved, and the heat dissipation and optical performance of the overall chip are improved.

[0006] In some specific embodiments, the first sub-chip, the second sub-chip and the third sub-chip all include an n-type electrode, an n-type semiconductor layer, a multi-quantum well light-emitting layer, a p-type semiconductor layer and a p-type electrode, and the multi-quantum well light-emitting layer is located between the n-type semiconductor layer and the p-type semiconductor layer. The first sub-chip is a blue light chip, the second sub-chip is a green light chip, and the third sub-chip is a red light chip.

[0007] In some specific embodiments, the p-type electrode of the first sub-chip passes through the second dielectric layer and the third dielectric layer and is exposed on the lower surface of the third dielectric layer, the p-type electrode of the second sub-chip passes through the third dielectric layer and is exposed on the lower surface of the third dielectric layer, and the p-type electrode of the third sub-chip is arranged on its bottom surface. The specific arrangement of the electrode penetrating the dielectric layer is conducive to the electrode connection and signal transmission of each sub-chip, and also facilitates the packaging and integration of the chip.

[0008] In some specific embodiments, the n-type electrodes of the first sub-chip, the second sub-chip and the third sub-chip are connected to the transparent conductive layer through the connecting electrode. The n-type electrodes of each sub-chip are connected to the transparent conductive layer through the connecting electrode, which ensures the electrical connectivity inside the chip and helps to achieve stable luminous performance.

[0009] In some specific embodiments, the transparent conductive layer is disposed on the top of the integrated Micro-LED chip, and the second sub-chip is disposed directly below the first sub-chip. The arrangement of the transparent conductive layer on the top and the second sub-chip directly below the first sub-chip optimizes the optical and electrical performance of the chip, and is beneficial to the emission of light and the overall structural stability of the chip.

[0010] In some specific embodiments, the width of the first sub-chip is smaller than the width of the second sub-chip so that at least part of the light emitted by the second sub-chip does not pass through the first sub-chip. The design that the width of the first sub-chip is smaller than the width of the second sub-chip can control the light propagation path, reduce unnecessary light interference, and improve optical performance.

[0011] In some specific embodiments, a buffer layer is provided in the n-type semiconductor layer of the first sub-chip and the second sub-chip, and the multi-quantum well light-emitting layer is composed of a chemical formula of Al x In y Ga z The p-type semiconductor layer is provided with an electron blocking layer, and the emission spectrum of the first sub-chip is a blue light band with a typical peak wavelength of 467nm, and the emission spectrum of the second sub-chip is a green light band with a typical peak wavelength of 532nm; the n-type semiconductor layer of the third sub-chip contains at least one layer of doped AlGaAs, and the multi-quantum well light-emitting layer is composed of a chemical formula of Al x Ga y In z The semiconductor layers of P with two different components and nanometer thickness are alternately stacked, and the p-type semiconductor layer contains at least one layer of doped AlGaAs, and the emission spectrum of the third sub-chip is a red light band with a typical peak wavelength of 625nm, wherein x+y+z=1, 0≤x≤1, 0≤y≤1, 0≤z≤1. The specific structure and parameter settings of the semiconductor layer and the light-emitting layer of each sub-chip can optimize the light-emitting performance of each sub-chip, so that it can achieve ideal light-emitting effects in the blue light, green light and red light bands respectively.

[0012] In some specific embodiments, the third sub-chip is provided with a fluorescence conversion layer, which covers the top surface of the n-type semiconductor layer and the sidewalls of the n-type semiconductor layer, the multi-quantum well light-emitting layer, and the p-type semiconductor layer. The multi-quantum well light-emitting layer is composed of a chemical formula of Al x In y Ga zThe N is composed of two semiconductor layers with different components and nanometer thickness alternately stacked, the p-type semiconductor layer also includes an electron blocking layer, and the fluorescence conversion layer is provided with a polymer substrate and a fluorescent material to convert the light emitted by the multi-quantum well light-emitting layer into red light. The third sub-chip is provided with a fluorescence conversion layer, which can further optimize the luminous effect of red light and improve the quality and stability of red light.

[0013] In some specific embodiments, the fluorescent material is a rare earth ion Eu 2+ Doped CaAlSiN3, Eu 2+ Doped with Ca 0.8 Li 0.2 Al 0.8 Si 1.2 N3, Eu 2+ Doped (Ca, Sr, Ba)2Si5N8:Eu 2+ Any one of: InP quantum dots, CdSe quantum dots, CdSe / ZnS core-shell structure quantum dots, perovskite structure CsPbX3 (X=Cl, Br, I) quantum dots; Mn 4+ Doped K2SiF6 phosphor, Mn 4+ Doped K2GeF6 phosphor, Mn 4+ Any one of the K2TiF6 phosphors doped with Pr 3+ Doped YAG phosphor; or a combination of any two of the above, or a combination of any three; the polymer substrate is silica gel.

[0014] In some specific embodiments, a redistribution layer is provided at the bottom of the integrated Micro-LED chip, and the p-type electrodes of the first sub-chip, the second sub-chip, and the third sub-chip are connected to the circuit layer in the redistribution layer and lead out electrodes arranged at equal intervals at the bottom of the Micro-LED chip. The redistribution layer is provided at the bottom and the electrodes are led out at equal intervals, which is beneficial to the packaging of the chip and the connection with the external circuit, and improves the practicality and compatibility of the chip.

[0015] An integrated Micro-LED chip of the present invention has the following technical effects:

[0016] 1. Improved heat dissipation performance: The heat generated by the first and second sub-chips will not be conducted downward through the third sub-chip, reducing the temperature rise of the third sub-chip and improving the luminous performance and life of the third sub-chip. At the same time, the number of interfaces on the heat conduction path of the first and second sub-chips is reduced, thereby reducing the thermal resistance of their heat dissipation channels, which is also conducive to reducing the temperature rise of the first and second sub-chips.

[0017] 2.Optimization of optical performance: The structure and material settings of each sub-chip enable it to achieve ideal luminous effects in the blue, green and red light bands respectively. The design of the width of the first sub-chip is smaller than the width of the second sub-chip, so that part of the luminous line emitted by the second sub-chip will not pass through the first sub-chip, reducing light interference. The third sub-chip is provided with a fluorescent conversion layer, which can further optimize the luminous effect of red light and improve the quality and stability of red light.

[0018] 3. Improved electrical performance and integration: The electrode settings of each sub-chip and the connection with the transparent conductive layer through the connecting electrodes ensure the electrical connectivity inside the chip, which helps to achieve stable luminous performance. The structural design of the chip, including the setting of the dielectric layer and the stacking method of the sub-chips, is conducive to the integration and packaging of the chip, and improves the practicality and compatibility of the chip. For example, the redistribution layer is set at the bottom and the electrodes are led out at equal spacing, which is conducive to the connection between the chip and the external circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate the embodiments and are used together with the description to explain the principles of the present invention. It will be easy to recognize other embodiments and many expected advantages of the embodiments because they become better understood by reference to the following detailed description. The elements of the drawings are not necessarily to scale with each other. The same reference numerals refer to corresponding similar parts.

[0020] Figure 1 is a schematic structural diagram of an integrated Micro-LED chip according to a first embodiment of the present invention;

[0021] Figure 2 is a schematic structural diagram of an integrated Micro-LED chip according to a second embodiment of the present invention;

[0022] Figure 3 is a schematic structural diagram of an integrated Micro-LED chip according to a third embodiment of the present invention;

[0023] Figure 4 is a schematic structural diagram of an integrated Micro-LED chip according to the fourth embodiment of the present invention. DETAILED DESCRIPTION

[0024] In the following detailed description, reference is made to the accompanying drawings, which form a part of the detailed description and are shown by illustrative specific embodiments in which the present invention can be put into practice. To this end, directional terms, such as "top", "bottom", "left", "right", "up", "down", etc., are used with reference to the orientation of the figures described. Because the parts of the embodiments can be positioned in several different orientations, directional terms are used for the purpose of illustration and are by no means limiting. It should be understood that other embodiments may be utilized or logical changes may be made without departing from the scope of the present invention. Therefore, the following detailed description should not be adopted in a limiting sense, and the scope of the present invention is defined by the appended claims.

[0025] Figure 1 FIG. 1 shows a schematic diagram of the structure of an integrated Micro-LED chip according to a first embodiment of the present invention. Figure 1 As shown, the integrated Micro-LED chip includes a first sub-chip 1, a second sub-chip 2, and a third sub-chip 3 stacked vertically and longitudinally. The first sub-chip 1, the second sub-chip 2, and the third sub-chip 3 all include an n-type electrode, an n-type semiconductor layer, a multi-quantum well light-emitting layer, a p-type semiconductor layer, and a p-type electrode, and the multi-quantum well light-emitting layer is located between the n-type semiconductor layer and the p-type semiconductor layer. The first sub-chip is a blue light chip, the second sub-chip is a green light chip, and the third sub-chip is a red light chip. The height of the second sub-chip 2 is between the height of the first sub-chip 1 and the height of the third sub-chip 3, and the projection of the third sub-chip 3 on the horizontal plane does not overlap with the projection of the first sub-chip 1 on the horizontal plane and the projection of the second sub-chip 2 on the horizontal plane.

[0026] In a specific embodiment, the integrated Micro-LED chip is also provided with a first dielectric layer 4, a second dielectric layer 5, a third dielectric layer 6 and a transparent conductive layer 7. The third dielectric layer 6 is arranged between the second sub-chip 2 and the third sub-chip 3, the second dielectric layer 5 is arranged between the first sub-chip 1 and the second sub-chip 2, and the first dielectric layer 4 is arranged between the first sub-chip 1 and the transparent conductive layer 7.

[0027] In a specific embodiment, the p-type electrode of the first sub-chip 1 passes through the second dielectric layer 5 and the third dielectric layer 6 in sequence, and exposes the lower surface of the third dielectric layer 6; the light emitted by the first sub-chip 1 can pass through the first dielectric layer 4 and the transparent conductive layer 7. The p-type electrode of the second sub-chip 2 passes through the third dielectric layer 6, and exposes the lower surface of the third dielectric layer 6; the light emitted by the second sub-chip 2 can pass through the first dielectric layer 4, the second dielectric layer 5 and the transparent conductive layer 7; the second dielectric layer 5 will absorb the light emitted by the first sub-chip 1. The p-type electrode of the third sub-chip 3 is located at its bottom, and the light emitted by the third sub-chip 3 can pass through the first dielectric layer 4, the second dielectric layer 5, the third dielectric layer 7, and the transparent conductive layer 7, and the third dielectric layer 6 will absorb the light emitted by the first sub-chip 1 and the second sub-chip 2.

[0028] In a specific embodiment, a connecting electrode 8 is further provided, and the connecting electrode 8 is connected to the n-type electrodes of the first sub-chip 1 , the second sub-chip 2 , and the third sub-chip 3 , and the connecting electrode 8 is conductively connected to the transparent conductive layer 7 .

[0029] In a specific embodiment, the transparent conductive layer is disposed on the top of the integrated Micro-LED chip, and the second sub-chip is disposed directly below the first sub-chip. The arrangement of the transparent conductive layer on the top and the second sub-chip directly below the first sub-chip optimizes the optical and electrical performance of the chip, which is beneficial to the emission of light and the overall structural stability of the chip.

[0030] In a specific embodiment, the n-type semiconductor layer of the first sub-chip 1 and the second sub-chip 2 further includes a buffer layer, and the multi-quantum well light-emitting layer is composed of a general chemical formula of Al x In y Ga z N (where x+y+z=1, 0≤x≤1, 0≤y≤1, 0≤z≤1) is composed of two semiconductor layers of different components and nanometer thickness alternately stacked, and the p-type semiconductor layer also includes an electron blocking layer; the first sub-chip 1 has a light-emitting spectrum in the blue light band, and the typical peak wavelength of the light-emitting spectrum is 467nm. The second sub-chip 3 has a light-emitting spectrum in the green light band, and the typical peak wavelength of the light-emitting spectrum is 532nm. The n-type semiconductor layer of the third sub-chip contains at least one layer of doped AlGaAs, and the multi-quantum well light-emitting layer has a chemical formula of Al x Ga y In z The third sub-chip is composed of two semiconductor layers of different components and nanometer thickness alternately stacked, wherein the p-type semiconductor layer contains at least one layer of doped AlGaAs. The emission spectrum of the third sub-chip is in the red light band, and the typical peak wavelength of the emission spectrum is 625nm.

[0031] Continue to refer Figure 2 , Figure 2 FIG. 4 shows a schematic diagram of the structure of an integrated Micro-LED chip according to a second embodiment of the present invention. Figure 2 As shown, in Figure 1 Based on the embodiment of the present invention, a fluorescence conversion layer 10 is provided on the third sub-chip, and the fluorescence conversion layer 10 covers the top surface of the n-type semiconductor layer and the side walls of the n-type semiconductor layer, the multi-quantum well light-emitting layer, and the p-type semiconductor layer. The multi-quantum well light-emitting layer is composed of a chemical formula of Al x In y Ga z The p-type semiconductor layer is composed of two semiconductor layers with different components and nanometer thickness, and the p-type semiconductor layer also includes an electron blocking layer. The fluorescence conversion layer 10 is provided with a polymer substrate and a fluorescent material, and the fluorescent material converts the light emitted by the multi-quantum well light-emitting layer into red light.

[0032] In a specific embodiment, the fluorescent material is a rare earth ion Eu 2+ Doped CaAlSiN3, Eu 2+ Doped with Ca 0.8 Li 0.2 Al 0.8 Si 1.2 N3, Eu 2+ Doped (Ca, Sr, Ba)2Si5N8:Eu 2+ Any one of: InP quantum dots, CdSe quantum dots, CdSe / ZnS core-shell structure quantum dots, perovskite structure CsPbX3 (X=Cl, Br, I) quantum dots; Mn 4+ Doped K2SiF6 phosphor, Mn 4+ Doped K2GeF6 phosphor, Mn 4+ Any one of the K2TiF6 phosphors doped with Pr 3+ Doped YAG phosphor; or a combination of any two of the above, or a combination of any three; the polymer substrate is silica gel.

[0033] Figure 3 FIG. 4 shows a schematic structural diagram of an integrated Micro-LED chip according to a third embodiment of the present invention. Figure 3 As shown, a redistribution layer 9 is also provided at the bottom of the integrated Micro-LED chip, and the p-type electrodes of the first sub-chip 1, the second sub-chip 2 and the third sub-chip 3 are connected to the circuit layer in the redistribution layer and lead out to electrodes arranged at equal intervals at the bottom of the Micro-LED chip. Figure 1 The embodiments are the same as those in the embodiments, and will not be repeated here.

[0034] Figure 4 FIG. 4 shows a schematic structural diagram of an integrated Micro-LED chip according to a fourth embodiment of the present invention. Figure 4 As shown, the width of the first sub-chip 1 is smaller than the width of the second sub-chip 2, so that part of the light emitted by the second sub-chip 2 will not pass through the first sub-chip 1. Figure 1 The embodiments are the same as those in the embodiments, and will not be repeated here.

[0035] The heat generated by the first sub-chip 1 and the second sub-chip 2 in the integrated Micro-LED chip of the present application will not be conducted downward through the third sub-chip 3, thereby reducing the temperature rise of the third sub-chip 3 and improving the luminous performance and life of the third sub-chip 3; at the same time, the number of interfaces on the heat conduction path of the first sub-chip 1 and the second sub-chip 2 is reduced, thereby reducing the thermal resistance of the heat dissipation channel, which is also beneficial to reducing the temperature rise of the first sub-chip 1 and the second sub-chip 2.

[0036] Obviously, those skilled in the art can make various modifications and changes to the embodiments of the present invention without departing from the spirit and scope of the present invention. In this way, if these modifications and changes are within the scope of the claims of the present invention and their equivalents, the present invention is also intended to cover these modifications and changes. The word "comprising" does not exclude the presence of other elements or steps not listed in the claims. The simple fact that certain measures are recorded in mutually different dependent claims does not indicate that the combination of these measures cannot be used to profit. Any reference numerals in the claims should not be considered to limit the scope.

Claims

1. Integrated Micro-LED chip, characterized in that: It includes a first sub-chip, a second sub-chip, a third sub-chip and a transparent conductive layer which are vertically stacked in a longitudinal direction, wherein the second sub-chip is arranged at a position between the heights of the first sub-chip and the third sub-chip, a first dielectric layer is arranged between the first sub-chip and the transparent conductive layer, a second dielectric layer is arranged between the first sub-chip and the second sub-chip, a third dielectric layer is arranged between the second sub-chip and the third sub-chip, and there is no intersection between the horizontal projection of the third sub-chip and the horizontal projection of the first sub-chip and the second sub-chip.

2. The integrated Micro-LED chip according to claim 1, characterized in that: The first sub-chip, the second sub-chip and the third sub-chip all include an n-type electrode, an n-type semiconductor layer, a multi-quantum well light-emitting layer, a p-type semiconductor layer and a p-type electrode, and the multi-quantum well light-emitting layer is located between the n-type semiconductor layer and the p-type semiconductor layer. The first sub-chip is a blue light chip, the second sub-chip is a green light chip, and the third sub-chip is a red light chip.

3. The integrated Micro-LED chip according to claim 2, characterized in that: The p-type electrode of the first sub-chip passes through the second dielectric layer and the third dielectric layer and is exposed at the lower surface of the third dielectric layer, the p-type electrode of the second sub-chip passes through the third dielectric layer and is exposed at the lower surface of the third dielectric layer, and the p-type electrode of the third sub-chip is arranged on its bottom surface.

4. The integrated Micro-LED chip according to claim 3, characterized in that: The n-type electrodes of the first sub-chip, the second sub-chip and the third sub-chip are connected to the transparent conductive layer through connecting electrodes.

5. The integrated Micro-LED chip according to claim 1, characterized in that: The transparent conductive layer is disposed on the top of the integrated Micro-LED chip, and the second sub-chip is disposed directly below the first sub-chip.

6. The integrated Micro-LED chip according to claim 5, characterized in that: The width of the first sub-chip is smaller than the width of the second sub-chip so that at least part of the light emitted by the second sub-chip does not pass through the first sub-chip.

7. The integrated Micro-LED chip according to claim 2, characterized in that: The n-type semiconductor layer of the first sub-chip and the second sub-chip is provided with a buffer layer, and the multi-quantum well light-emitting layer is composed of a chemical formula of Al x In y Ga z The first sub-chip is composed of two semiconductor layers with different components and thickness at the nanometer level, and an electron blocking layer is provided in the p-type semiconductor layer. The light emission spectrum of the first sub-chip is a blue light band with a typical peak wavelength of 467nm, and the light emission spectrum of the second sub-chip is a green light band with a typical peak wavelength of 532nm; the n-type semiconductor layer of the third sub-chip contains at least one layer of doped AlGaAs, and the multi-quantum well light-emitting layer is composed of a chemical formula of Al x Ga y In z P is composed of two semiconductor layers with different components and nanometer thickness alternately stacked, the p-type semiconductor layer contains at least one layer of doped AlGaAs, and the light emitting spectrum of the third sub-chip is a red light band with a typical peak wavelength of 625nm, wherein x+y+z=1, 0≤x≤1, 0≤y≤1, 0≤z≤1.

8. The integrated Micro-LED chip according to claim 2, characterized in that: The third sub-chip is provided with a fluorescence conversion layer, which covers the top surface of the n-type semiconductor layer and the side walls of the n-type semiconductor layer, the multi-quantum well light-emitting layer, and the p-type semiconductor layer. The multi-quantum well light-emitting layer is composed of a chemical formula of Al x In y Ga z N is formed by alternating stacking of two semiconductor layers with different components and nanometer thickness, the p-type semiconductor layer also includes an electron blocking layer, and the fluorescence conversion layer is provided with a polymer substrate and a fluorescent material to convert the light emitted by the multi-quantum well light-emitting layer into red light.

9. The integrated Micro-LED chip according to claim 8, characterized in that: The fluorescent material is rare earth ion Eu 2+ Doped CaAlSiN3, Eu 2+ Doped with Ca 0.8 Li 0.2 Al 0.8 Si 1.2 N3, Eu 2+ Doped (Ca, Sr, Ba)2Si5N8:Eu 2+ Any of: InP quantum dots, CdSe quantum dots, CdSe / ZnS core-shell structure quantum dots, perovskite structure CsPbX3 (X=Cl, Br, I) quantum dots; Mn 4+ Doped K2SiF6 phosphor, Mn 4+ Doped K2GeF6 phosphor, Mn 4+ Any of the K2TiF6 phosphors doped with Pr 3+ Doped YAG phosphor; or a combination of any two of the above, or a combination of any three of the above; the polymer substrate is silica gel.

10. The integrated Micro-LED chip according to claim 1, characterized in that: A redistribution layer is provided at the bottom of the integrated Micro-LED chip, and the p-type electrodes of the first sub-chip, the second sub-chip and the third sub-chip are connected to the circuit layer in the redistribution layer and electrodes arranged at equal intervals are led out at the bottom of the Micro-LED chip.

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