Perovskite solar cell, laminated cell, preparation methods of perovskite solar cell and laminated cell, and photovoltaic module

Abstract

The invention relates to a perovskite solar cell, a laminated cell and a preparation method thereof, and a photovoltaic module. The perovskite solar cell comprises a first electrode, a first carrier transport layer, a perovskite light absorption layer, an ultraviolet absorption layer, a second carrier transport layer and a transparent conductive electrode which are stacked, wherein the perovskite light absorption layer comprises a first passivation material; or a passivation layer is arranged between the perovskite light absorption layer and the ultraviolet absorption layer, and the passivation layer comprises a second passivation material. An ultraviolet absorption layer is arranged between a perovskite light absorption layer and a second carrier transmission layer, and a first passivation material is added in the perovskite light absorption layer, or a passivation layer containing a second passivation material is arranged between the perovskite light absorption layer and the ultraviolet absorption layer, so that surface defects of the perovskite light absorption layer can be effectively passivated, non-radiative recombination is inhibited, and the photoelectric conversion efficiency is improved. And the photoelectric conversion efficiency and the stability of the perovskite solar cell are improved.

Description

Technical Field

[0001] The present application relates to the field of photovoltaic technology, and in particular to a perovskite solar cell, a stacked cell and a preparation method thereof, and a photovoltaic module. Background Art

[0002] Perovskite solar cells have many excellent optoelectronic properties, such as adjustable band gap, easy preparation, excellent light absorption coefficient and long carrier diffusion length. In terms of efficiency, the photoelectric conversion efficiency of perovskite solar cells has increased rapidly, and in just a few years it has reached a level comparable to that of traditional silicon-based solar cells. Perovskite solar cells can also be combined with other solar cells to form stacked solar cells due to their adjustable band gap, such as crystalline silicon, copper indium gallium selenide, cadmium telluride and other batteries. In terms of application, perovskite solar cells can not only be used in large-scale photovoltaic power stations, but also have broad application prospects in portable electronic devices, wearable devices and other fields. For example, it is possible to provide continuous power supply for devices such as smartphones and smart watches in the future. However, traditional perovskite solar cells have poor stability performance.

[0003] Therefore, it is necessary to improve the traditional technology. Summary of the invention

[0004] Based on this, the present application provides a perovskite solar cell, a stacked cell and a preparation method thereof, and a photovoltaic module with good stability.

[0005] The technical solution of this application to solve the above technical problems is as follows.

[0006] In a first aspect, the present application provides a perovskite solar cell, comprising a stacked first electrode, a first carrier transport layer, a perovskite light absorption layer, an ultraviolet absorption layer, a second carrier transport layer and a transparent conductive electrode, wherein the perovskite light absorption layer comprises a first passivation material; or a passivation layer is provided between the perovskite light absorption layer and the ultraviolet absorption layer, and the passivation layer comprises a second passivation material.

[0007] In some of the embodiments, in the perovskite solar cell, the ultraviolet absorption layer includes a benzophenone ultraviolet absorption material; optionally, the benzophenone ultraviolet absorption material includes at least one of 2-hydroxybenzophenone, (2-hydroxy-4-methoxyphenyl) benzophenone, 2,4-dihydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-octyloxybenzophenone and 2,2'-dihydroxy-4,4'-dimethoxybenzophenone.

[0008] In some of the embodiments, in the perovskite solar cell, the first passivation material includes at least one of PMMA and an organic ammonium salt; optionally, the organic ammonium salt includes at least one of PEAI, OAI, PDADI, PEI and PECl.

[0009] In some of the embodiments, in the perovskite solar cell, the second passivation material includes at least one of PMMA, PDMS and PVDF.

[0010] In some of the embodiments, in the perovskite solar cell, the weight average molecular weight of the second passivation material is 100,000 Da to 350,000 Da.

[0011] In some of the embodiments, in the perovskite solar cell, the thickness of the perovskite light absorbing layer is 10 nm~100 μm, and the band gap is 0.9 eV~3.0 eV.

[0012] In some embodiments, in the perovskite solar cell, the perovskite light absorbing layer comprises ABX 3 , wherein A includes at least one of a monovalent organic cation and a monovalent inorganic cation, B includes a divalent metal cation, and X includes a monovalent anion.

[0013] In some embodiments, in the perovskite solar cell, the perovskite light absorbing layer satisfies at least one of the following characteristics:

[0014] (1) A includes Cs + , Rb + , CH 3 NH 3 + and CH 2 (NH 2 ) 2 + At least one of;

[0015] (2) B includes Pb 2+ , Cu 2+ 、Zn 2+ , Ga 2+ Sn 2+ and Ca 2+ At least one of;

[0016] (3) X includes I - Br - , Cl - 、F - and SCN - At least one of .

[0017] In some of the embodiments, in the perovskite solar cell, one of the first carrier transport layer and the second carrier transport layer is a hole transport layer, and the other is an electron transport layer.

[0018] In some embodiments, in the perovskite solar cell, the perovskite solar cell satisfies at least one of the following characteristics:

[0019] (1) The hole transport layer includes at least one of NiOx, F6TCNQ, PBCDT, 2PACz, MeO-2PACz, PTAA, PEDOT:PSS, F4TCNQ and Spiro-MeOTAD;

[0020] (2) The electron transport layer includes SnO 2 、C60、PCBM、TiO 2 , ICBA and ZnO.

[0021] A second aspect of the present application provides a method for preparing a perovskite solar cell, comprising the following steps:

[0022] Preparing a first carrier transport layer on the surface of the first electrode;

[0023] Preparing a perovskite light absorbing layer on a surface of the first carrier transport layer away from the first electrode;

[0024] Preparing an ultraviolet absorption layer on a surface of the perovskite light absorption layer away from the first carrier transport layer;

[0025] Sequentially preparing a second carrier transport layer and a transparent conductive electrode on a surface of the ultraviolet absorption layer away from the perovskite light absorption layer;

[0026] Wherein, the perovskite light absorbing layer includes a first passivation material, or, before the step of preparing the ultraviolet absorption layer, the step further includes preparing a passivation layer on a surface of the perovskite light absorbing layer away from the first carrier transport layer, and the passivation layer includes a second passivation material.

[0027] In some of the embodiments, in the method for preparing a perovskite solar cell, the method for preparing the ultraviolet absorption layer includes one of coating, scraping, evaporation and printing.

[0028] In some of the embodiments, in the method for preparing a perovskite solar cell, the concentration of the ultraviolet absorption solution for preparing the ultraviolet absorption layer is 0.1 mg / mL to 1 mg / mL.

[0029] In some embodiments, in the method for preparing a perovskite solar cell, the method satisfies one of the following characteristics:

[0030] (1) The perovskite light absorbing layer includes a first passivation material, and the concentration of the first passivation material in the precursor solution for preparing the perovskite light absorbing layer is 0.1 mg / mL to 0.5 mg / mL;

[0031] (2) In the step of preparing the passivation layer, the concentration of the passivation solution for preparing the passivation layer is 0.05 mg / mL to 1 mg / mL.

[0032] On one hand, the present application provides a stacked cell, including a top cell and a bottom cell, wherein the top cell includes the above-mentioned perovskite solar cell or the perovskite solar cell prepared by the above-mentioned preparation method.

[0033] In some embodiments, in the stacked cell, the bottom cell comprises a crystalline silicon cell.

[0034] On one hand, the present application provides a method for preparing a stacked battery, comprising the following steps:

[0035] Prepare a first carrier transport layer on the surface of the crystalline silicon cell;

[0036] Preparing a perovskite light absorbing layer on a surface of the first carrier transport layer away from the first electrode;

[0037] Preparing an ultraviolet absorption layer on a surface of the perovskite light absorption layer away from the first carrier transport layer;

[0038] Sequentially preparing a second carrier transport layer, a transparent conductive layer, and a second electrode on a surface of the ultraviolet absorption layer away from the perovskite light absorption layer;

[0039] Wherein, the perovskite light absorbing layer includes a first passivation material, or, before the step of preparing the ultraviolet absorption layer, the step further includes preparing a passivation layer on a surface of the perovskite light absorbing layer away from the first carrier transport layer, and the passivation layer includes a second passivation material.

[0040] On one hand, the present application provides a photovoltaic module, including the above-mentioned perovskite solar cell, the perovskite solar cell prepared by the above-mentioned preparation method, and the above-mentioned stacked cell prepared by the above-mentioned preparation method.

[0041] Compared with the prior art, the perovskite solar cell of the present application has the following beneficial effects:

[0042] The perovskite solar cell of the present application has an ultraviolet absorption layer arranged between the perovskite light absorption layer and the second carrier transport layer, and a first passivation material is added to the perovskite light absorption layer, or a passivation layer containing a second passivation material is arranged between the perovskite light absorption layer and the ultraviolet absorption layer, which can effectively passivate the surface defects of the perovskite light absorption layer, inhibit non-radiative recombination, and improve the photoelectric conversion efficiency and stability performance of the perovskite solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0044] Figure 1 A schematic diagram of the structure of a perovskite solar cell provided in one embodiment;

[0045] Figure 2 A schematic structural diagram of a perovskite solar cell provided in another embodiment.

[0046] Reference numerals:

[0047] 10a / 10b: Perovskite solar cell; 11: First electrode; 12: First carrier transport layer; 13: Perovskite light absorption layer; 14: Ultraviolet absorption layer; 15: Second carrier transport layer; 16: Transparent conductive electrode; 17: Passivation layer. DETAILED DESCRIPTION

[0048] References to embodiments of the present invention will now be provided in detail, one or more examples of which are described below. Each example is provided as an explanation rather than a limitation of the present invention. In fact, it will be apparent to those skilled in the art that various modifications and variations may be made to the present invention without departing from the scope or spirit of the present invention. For example, a feature illustrated or described as part of one embodiment may be used in another embodiment to produce a further embodiment.

[0049] Therefore, it is intended that the present invention covers such modifications and variations that fall within the scope of the appended claims and their equivalents. Other objects, features and aspects of the present invention are disclosed in or are obvious from the following detailed description. Those of ordinary skill in the art will appreciate that this discussion is only a description of exemplary embodiments and is not intended to limit the broader aspects of the present invention.

[0050] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used in the specification of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0051] The term "comprises", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements defined by the sentence "comprising one..." do not exclude the presence of other identical elements in the process, method, article or equipment including the elements. The indefinite articles "a kind of" and "an" before the elements or components of the present invention are not restrictive to the quantity requirements (i.e., the number of occurrences) of the elements or components. Therefore, "a" or "a kind of" should be interpreted as including one or at least one, and the elements or components in the singular form also include the plural form, unless the number clearly refers only to the singular form. The meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0052] The weight of the relevant components mentioned in the description of the embodiments of the present invention may not only refer to the specific content of each component, but also indicate the weight ratio between the components. Therefore, as long as the content of the relevant components is proportionally enlarged or reduced according to the description of the embodiments of the present invention, it is within the scope disclosed in the description of the embodiments of the present invention. Specifically, the weight described in the description of the embodiments of the present invention may be a mass unit known in the chemical industry such as μg, mg, g, kg, etc.

[0053] Except as shown in the operating examples or otherwise indicated, all numbers used in the specification and claims to indicate the amount of ingredients, physicochemical properties, etc. are understood to be adjusted by the term "about" in all cases. For example, therefore, unless otherwise indicated, the numerical parameters listed in the above specification and the attached claims are approximate values, and those skilled in the art can use the teachings disclosed herein to seek to obtain the desired properties and appropriately change these approximate values. The use of numerical ranges expressed as endpoints includes all numbers within the range and any range within the range, for example, 1 to 5 includes 1, 1.1, 1.3, 1.5, 2, 2.75, 3, 3.80, 4 and 5, etc.

[0054] Commonly used methods for preparing perovskite light-absorbing layers include the solution method. Studies have found that the perovskite light-absorbing layer prepared by the solution method has a large number of defects. These defects are concentrated on the surface of the perovskite, which in turn causes serious non-radiative recombination at the perovskite interface, affecting the performance of perovskite solar cells.

[0055] In the preparation process of lead-based perovskite light-absorbing layer, a little excess PbI is usually added 2 To achieve the effect of passivation defects to inhibit non-radiative recombination. The study found that excess PbI 2 The JV test caused greater hysteresis in the battery, and the PbI in the lead-based perovskite light-absorbing layer 2 When exposed to ultraviolet light, it undergoes photodegradation to produce undesirable metals Pb and I 2 , which in turn destroys the stability of perovskite solar cells. Moreover, the monovalent cations in the perovskite light-absorbing layer are easily affected by ultraviolet rays in sunlight and deprotonated, further leading to the degradation of perovskite.

[0056] The UV absorbing material is directly added to the perovskite precursor solution, or added to the anti-solvent for the preparation of the perovskite film. This has limited effect on improving the UV resistance of the perovskite light-absorbing layer. According to analysis, the carbon group in the UV absorbing material will form an intramolecular hydrogen bond with the hydroxyl group in the molecule. The intramolecular hydrogen bond absorbs ultraviolet energy and breaks the intramolecular hydrogen bond to achieve the effect of absorbing ultraviolet light. The UV absorbing material is directly added to the perovskite precursor solution, or added to the anti-solvent for the preparation of the perovskite film. Since the perovskite has a small grain size and a large grain boundary width when the annealing is completed, most of the UV absorbing material will enter the perovskite grain boundary. The carbon group of the UV absorbing material will react with the uncoordinated divalent metal cation halide (such as PbI 2 ) forms coordination bonds, which destroys the hydrogen bonds within the molecules of the ultraviolet absorbing material, making it unable to absorb ultraviolet energy and achieve the effect of absorbing ultraviolet rays.

[0057] See also Figure 1 In one embodiment of the present application, a perovskite solar cell 10a is provided, comprising a first electrode 11, a first carrier transport layer 12, a perovskite light absorption layer 13, an ultraviolet absorption layer 14, a second carrier transport layer 15 and a transparent conductive electrode 16 which are stacked, wherein the perovskite light absorption layer 13 comprises a first passivation material.

[0058] See also Figure 2 Another embodiment of the present application provides a perovskite solar cell 10b, including a stacked first electrode 11, a first carrier transport layer 12, a perovskite light absorption layer 13, an ultraviolet absorption layer 14, a second carrier transport layer 15 and a transparent conductive electrode 16, a passivation layer 17 is provided between the perovskite light absorption layer 13 and the ultraviolet absorption layer 14, and the passivation layer 17 includes a second passivation material.

[0059] The perovskite solar cell of the present application has an ultraviolet absorption layer arranged between the perovskite light absorption layer and the second carrier transport layer, and a first passivation material is added to the perovskite light absorption layer, or a passivation layer containing a second passivation material is arranged between the perovskite light absorption layer and the ultraviolet absorption layer, so as to effectively passivate the surface defects of the perovskite light absorption layer, inhibit non-radiative recombination, and improve the photoelectric conversion efficiency and stability performance of the perovskite solar cell.

[0060] It can be understood that the perovskite light absorbing layer includes a first passivation material, or a passivation layer 17 is provided between the perovskite light absorbing layer 13 and the ultraviolet absorption layer 14 , at least one of the two is selected.

[0061] It can be understood that UV absorbing materials can be divided into two categories: organic and inorganic. Organic UV absorbing materials are mainly some compounds containing aromatic structures, such as phenols, benzophenones, benzoic acids, etc. These compounds can absorb ultraviolet rays and convert them into heat energy to dissipate, playing a protective role. Inorganic UV absorbing materials are mainly some metal oxides, such as titanium dioxide, zinc oxide, etc. They absorb ultraviolet rays through their special crystal structure and energy level structure, thereby protecting the surface of the material from ultraviolet rays.

[0062] In some of these examples, in the perovskite solar cell, the UV absorbing layer includes a benzophenone-based UV absorbing material.

[0063] Furthermore, the benzophenone-based ultraviolet absorbing material contains a hydroxyl group.

[0064] Furthermore, the phenone-based UV absorbing material comprises a hydroxyl group adjacent to the ketone group.

[0065] In some of the examples, in the perovskite solar cell, the ultraviolet absorption layer includes at least one of 2-hydroxybenzophenone, (2-hydroxy-4-methoxyphenyl)phenyl ketone, 2,4-dihydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-octyloxybenzophenone and 2,2'-dihydroxy-4,4'-dimethoxybenzophenone.

[0066] In some of the examples, in the perovskite solar cell, the first passivation material includes at least one of PMMA and an organic ammonium salt. Further, the organic ammonium salt includes at least one of PEAI (phenethylammonium iodide), OAI (octylamine hydroiodide), PDADI (propylenediamine iodide), PEI (polyethyleneimine), and PECl.

[0067] In some of these examples, in the perovskite solar cell, the second passivation material includes at least one of PMMA (polymethyl methacrylate), PDMS (polydimethylsiloxane) and PVDF (polyvinylidene fluoride).

[0068] In some of these examples, in perovskite solar cells, the weight average molecular weight of the second passivation material is 100,000 Da to 350,000 Da.

[0069] It can be understood that the weight average molecular weight of the second passivation material includes but is not limited to 100000 Da, 120000 Da, 150000 Da, 180000 Da, 200000 Da, 220000 Da, 250000 Da, 300000 Da, and 350000 Da; in some examples, it can be within the range formed by any two of these point values ​​as end values, the same below.

[0070] In some of these examples, in perovskite solar cells, the weight average molecular weight of the second passivation material is 150,000 Da to 350,000 Da.

[0071] Optionally, the weight average molecular weight of the second passivation material is 180,000 Da to 200,000 Da.

[0072] By controlling the number average molecular weight of the second passivation material, it is effectively avoided that the polymer second passivation material affects the conductivity of the perovskite film, thereby avoiding affecting the electron transmission.

[0073] When the passivation material is polymethyl methacrylate, the hydrophobicity of the battery can also be improved.

[0074] In some of these examples, the perovskite solar cell has a perovskite light-absorbing layer comprising ABX 3 , wherein A includes at least one of a monovalent organic cation and a monovalent inorganic cation, B includes a divalent metal cation, and X includes a monovalent anion.

[0075] In some of these examples, perovskite solar cells contain Cs + , Rb + , CH 3 NH 3 + and CH 2 (NH 2 ) 2 + At least one of .

[0076] In some of these examples, in perovskite solar cells, B includes Pb 2+ , Cu 2+ 、Zn 2+ , Ga 2+ Sn 2+ and Ca 2+ At least one of .

[0077] In some of these examples, in perovskite solar cells, X includes I- Br - , Cl - 、F - and SCN - At least one of .

[0078] It can be understood that A, B, and X can each independently be one type, or can each independently be multiple types.

[0079] In some of these examples, perovskite solar cells have a perovskite light-absorbing layer with a thickness of 10 nm to 100 μm and a band gap of 0.9 eV to 3.0 eV.

[0080] It will be understood that the thickness of the perovskite light absorbing layer includes but is not limited to 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 1 μm, 10 μm, 50 μm, 100 μm, and the band gap includes but is not limited to 0.9 eV, 1 eV, 1.2 eV, 1.5 eV, 1.8 eV, 2 eV, 2.2 eV, 2.5 eV, 2.8 eV, and 3.0 eV.

[0081] In some of the examples, in the perovskite solar cell, one of the first carrier transport layer and the second carrier transport layer is a hole transport layer, and the other is an electron transport layer.

[0082] It is understood that the hole transport layer and the electron transport layer may independently include a single layer or multiple layers.

[0083] In some of these examples, the hole transport layer in the perovskite solar cell includes NiOx, (2,2'-(perfluoronaphthalene-2,6-diylidene)-dimalononitrile) (F6TCNQ), (2-(9H-carbazole-9-yl)ethyl)phosphonic acid (PBCDT), (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid (2PACz), (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid (MeO-2PACz). ), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4TCNQ) and at least one of 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-MeOTAD).

[0084] In some of these examples, the electron transport layer in the perovskite solar cell includes SnO 2, C60, PCBM ([6,6]-phenyl-C61-butyric acid isomethyl ester, [6,6]-phenyl-C71-butyric acid isomethyl ester), TiO 2 , ICBA (1',1',4',4'-tetrahydro-di[1,4]methanenaphthalene [1,2:2',3',56,60:2',3'][5,6]fullerene-C60) and at least one of ZnO.

[0085] In some of these examples, in the perovskite solar cell, the transparent conductive electrode includes but is not limited to at least one of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), indium zinc oxide (IZO), tungsten-doped indium oxide (IWO) and aluminum-doped zinc oxide (AZO).

[0086] In some of the examples, in the perovskite solar cell, the first electrode includes one of a transparent conductive electrode, a metal electrode, a carbon electrode, and a crystalline silicon electrode.

[0087] Optionally, the metal electrode includes at least one of gold (Au), silver (Ag), aluminum (Al) and copper (Cu).

[0088] Optionally, the carbon electrode comprises graphene.

[0089] In some of these examples, in perovskite solar cells, the thicknesses of the first electrode and the conductive transparent electrode are independently 1 nm~10 μm.

[0090] It can be understood that the thickness of the first electrode and the conductive transparent electrode independently include but are not limited to 1 nm, 20 nm, 50 nm, 80 nm, 100 nm, 120 nm, 150 nm, 180 nm, 200 nm, 1 μm, and 10 μm.

[0091] In some of these examples, in perovskite solar cells, a hole blocking layer is provided between an electrode adjacent to the electron transport layer and the electron transport layer.

[0092] In some of these examples, the hole-blocking layer in perovskite solar cells includes bathocuproin (BCP) and tin dioxide (SnO 2 ) at least one of the following.

[0093] An embodiment of the present application provides a method for preparing a perovskite solar cell, comprising the following steps:

[0094] Step S100: preparing a first carrier transport layer on the surface of the first electrode;

[0095] Step S110: preparing a perovskite light absorption layer on a surface of the first carrier transport layer away from the first electrode;

[0096] Step S120: preparing an ultraviolet absorption layer on a surface of the perovskite light absorption layer away from the first carrier transport layer;

[0097] In some of the examples, in step S120 , the method of preparing the ultraviolet absorption layer includes one of spin coating, scraper coating, evaporation and printing.

[0098] It can be understood that the ultraviolet absorbing layer is prepared by using an ultraviolet absorbing solution in a spin coating method, a doctor blade coating method, or the like.

[0099] In some of the examples, in step S120, the concentration of the ultraviolet absorption solution for preparing the ultraviolet absorption layer is 0.1 mg / mL to 1 mg / mL.

[0100] It will be appreciated that the concentration of the UV absorbing solution includes, but is not limited to, 0.1 mg / mL, 0.2 mg / mL, 0.3 mg / mL, 0.4 mg / mL, 0.5 mg / mL, 0.6 mg / mL, 0.7 mg / mL, 0.8 mg / mL, 0.9 mg / mL, and 1 mg / mL.

[0101] In some of the examples, in step S120, the concentration of the ultraviolet absorption solution for preparing the ultraviolet absorption layer is 0.1 mg / mL to 1 mg / mL.

[0102] Optionally, the concentration of the ultraviolet absorption solution is 0.5 mg / mL to 1 mg / mL. Further, the concentration of the ultraviolet absorption solution is 0.5 mg / mL to 0.8 mg / mL.

[0103] By controlling the concentration of the UV absorbing solution, the stability of the perovskite solar cell can be effectively improved without affecting the carrier transport. The UV absorbing material itself is not conductive and will also become a non-radiative recombination center. If an excessive amount of UV absorbing material is added, it will affect the carrier transport and reduce the efficiency of the cell.

[0104] Step S130: sequentially preparing a second carrier transport layer and a transparent conductive electrode on a surface of the ultraviolet absorption layer away from the perovskite light absorption layer;

[0105] The perovskite light absorbing layer includes a first passivation material, or, before the step of preparing the ultraviolet absorption layer, the step of preparing a passivation layer on a surface of the perovskite light absorbing layer away from the first carrier transport layer is also included, and the passivation layer includes a second passivation material.

[0106] First, a first passivation material is added when preparing the perovskite light-absorbing layer, or a passivation layer containing a second passivation material is prepared on the surface of the perovskite light-absorbing layer, and then an ultraviolet absorption layer is prepared. The ultraviolet absorption layer filters out ultraviolet rays in sunlight incident from the electrode side to prevent ultraviolet rays from damaging the perovskite film, while at the same time enabling the first passivation material or the second passivation material to fully exert its passivation effect.

[0107] In some of the examples, the perovskite light absorbing layer includes a first passivation material, and the concentration of the first passivation material in a precursor solution for preparing the perovskite light absorbing layer is 0.1 mg / mL to 0.5 mg / mL.

[0108] It is understood that the concentration of the first passivation material includes, but is not limited to, 0.1 mg / mL, 0.2 mg / mL, 0.3 mg / mL, 0.4 mg / mL, and 0.5 mg / mL.

[0109] In some of the examples, in the step of preparing a passivation layer on a surface of the perovskite light absorbing layer away from the first carrier transport layer, the passivation layer is prepared by a spin coating method.

[0110] In some of the examples, in the step of preparing a passivation layer on a surface of the perovskite light absorbing layer away from the first carrier transport layer, the concentration of the passivation solution for preparing the passivation layer is 0.1 mg / mL~1 mg / mL.

[0111] It will be appreciated that the concentration of the passivation solution includes, but is not limited to, 0.1 mg / mL, 0.2 mg / mL, 0.3 mg / mL, 0.4 mg / mL, 0.5 mg / mL, 0.6 mg / mL, 0.7 mg / mL, 0.8 mg / mL, 0.9 mg / mL, and 1 mg / mL.

[0112] Optionally, the concentration of the passivation solution for preparing the passivation layer is 0.1 mg / mL to 0.5 mg / mL.

[0113] By controlling the concentration of the passivation solution, the stability performance of perovskite solar cells can be effectively improved without affecting carrier transport.

[0114] It can be understood that the present application does not limit the preparation methods of the perovskite light absorbing layer, the first carrier transport layer, the second carrier transport layer, the hole blocking layer, the first electrode and the transparent conductive electrode, and independently includes but is not limited to at least one of spin coating, scraper coating, evaporation, printing, spraying, sputtering, spray pyrolysis and slit coating.

[0115] One embodiment of the present application provides the use of the above-mentioned perovskite solar cell or the perovskite solar cell prepared by the above-mentioned preparation method in the preparation of a tandem battery. Another embodiment of the present application provides a tandem battery, including a top battery and a bottom battery, wherein the top battery includes the above-mentioned perovskite solar cell or the perovskite solar cell prepared by the above-mentioned preparation method.

[0116] The stacked cell provided in the present application, the top cell includes the above-mentioned perovskite solar cell or the perovskite solar cell prepared by the above-mentioned preparation method, the perovskite solar cell is provided with an ultraviolet absorption layer between the perovskite light absorption layer and the second carrier transport layer, and a first passivation material is added to the perovskite light absorption layer, or a passivation layer containing a second passivation material is provided between the perovskite light absorption layer and the ultraviolet absorption layer, which can effectively passivate the surface defects of the perovskite light absorption layer, inhibit non-radiative recombination, and improve the photoelectric conversion efficiency and stability performance of the perovskite solar cell.

[0117] In some examples, in the stacked cell, the bottom cell comprises a crystalline silicon cell. Optionally, the crystalline silicon bottom cell has a velvet structure.

[0118] In some of the examples, in the stacked cell, the crystalline silicon cell includes a transparent conductive layer, p-type amorphous silicon, intrinsic amorphous silicon, a silicon substrate, intrinsic amorphous silicon, n-type amorphous silicon, and a transparent conductive layer stacked in sequence.

[0119] An embodiment of the present application provides a method for preparing a stacked battery, comprising the following steps:

[0120] Prepare a first carrier transport layer on the surface of the crystalline silicon cell;

[0121] Prepare a perovskite light absorbing layer on a surface of the first carrier transport layer away from the first electrode;

[0122] Prepare an ultraviolet absorption layer on the surface of the perovskite light absorption layer away from the first carrier transport layer;

[0123] A second carrier transport layer, a transparent conductive layer, and a second electrode are sequentially prepared on a surface of the ultraviolet absorption layer away from the perovskite light absorption layer;

[0124] The perovskite light absorbing layer includes a first passivation material, or, before the step of preparing the ultraviolet absorption layer, the step of preparing a passivation layer on a surface of the perovskite light absorbing layer away from the first carrier transport layer is also included, and the passivation layer includes a second passivation material.

[0125] One embodiment of the present application provides the use of the above-mentioned perovskite solar cell, the perovskite solar cell prepared by the above-mentioned preparation method, and the above-mentioned tandem battery prepared by the above-mentioned preparation method in the preparation of a photovoltaic module. Another embodiment of the present application provides a photovoltaic module, including the above-mentioned perovskite solar cell, the perovskite solar cell prepared by the above-mentioned preparation method, and the above-mentioned tandem battery prepared by the above-mentioned preparation method.

[0126] It can be understood that photovoltaic modules can be used in photovoltaic power stations, such as ground power stations, rooftop power stations, water power stations, etc., and can also be used in equipment or devices that use solar energy to generate electricity, such as user solar power supplies, solar street lights, solar cars, solar buildings, etc. It can also be understood that the application scenarios of photovoltaic systems include but are not limited to this, that is, photovoltaic systems can be used in all fields that require solar energy to generate electricity. Taking the photovoltaic power generation system network as an example, the photovoltaic system may include a photovoltaic array, a junction box and an inverter. The photovoltaic array can be an array combination of multiple photovoltaic modules. For example, multiple photovoltaic modules can form multiple photovoltaic arrays. The photovoltaic array is connected to the junction box. The junction box can converge the current generated by the photovoltaic array. The converged current flows through the inverter and is converted into the alternating current required by the mains power grid, and then connected to the mains network to achieve solar power supply.

[0127] The photovoltaic module provided in the present application can be used, but is not limited to, in portable electronic devices such as smart phones and smart watches, and electrical devices such as vehicles, ships or aircraft.

[0128] The embodiments of the present application provide an electric device, which may be, but is not limited to, a mobile phone, a tablet, a laptop, an electric toy, an electric tool, a battery car, an electric car, a ship, a spacecraft, etc. Among them, the electric toy may include a fixed or mobile electric toy, such as a game console, an electric car toy, an electric ship toy, and an electric airplane toy, etc., and the spacecraft may include an airplane, a rocket, a space shuttle, and a spacecraft, etc.

[0129] The present application is further described in detail below in conjunction with specific implementation methods, but the implementation methods of the present application are not limited thereto.

[0130] Example 1

[0131] (1) Polishing of N-type silicon wafers, the velvet depth is 300 nm;

[0132] (2) PECVD was used to prepare the front intrinsic amorphous silicon and n-type amorphous silicon, with a total thickness of 25 nm;

[0133] (3) PECVD was used to prepare the back intrinsic amorphous silicon and p-type amorphous silicon, with a total thickness of 20 nm;

[0134] (4) Prepare the front transparent conductive oxide layer ITO by sputtering with a thickness of 10 nm;

[0135] (5) Sputtering was used to prepare the back transparent conductive oxide layer IZO with a thickness of 130 nm;

[0136] (6) A NiOx layer with a thickness of 15 nm was prepared on the front side by sputtering;

[0137] (7) using a spin coating method to prepare a SAM layer on the surface of the NiOx layer prepared in step (6) away from the ITO layer, the SAM material is composed of 4PACz and MeO-2PACz, the solvent is IPA, and the concentration is 0.1 mg / mL ~1 mg / mL;

[0138] (8) Using the anti-solvent method, the perovskite light absorbing layer Cs is prepared on the surface of the SAM layer prepared in step (7) away from the NiOx layer. 0.25 FA 0.75 Pb(I 0.8 Br 0.2 ) 3 , the band gap is about 1.68ev;

[0139] (9) preparing a passivation layer on the surface of the perovskite light absorbing layer prepared in step (8) away from the SAM layer by spin coating, wherein the passivation material is polymethyl methacrylate (number average molecular weight is 180000 Da), the solvent is ethyl acetate, and the concentration of the passivation solution is 0.5 mg / mL;

[0140] (10) using a spin coating method to prepare an ultraviolet absorption layer on the surface of the passivation layer prepared in step (9) away from the perovskite light absorbing layer, the ultraviolet absorption material is 2-hydroxybenzophenone, the solvent is ethanol, and the concentration of the ultraviolet absorption solution is 0.80 mg / mL;

[0141] (11) C60 was prepared by thermal evaporation with a thickness of 12 nm;

[0142] (12) Preparation of SnO by atomic layer deposition 2 Hole blocking layer, thickness 15 nm;

[0143] (13) The IZO layer was prepared by magnetron sputtering with a thickness of 50 nm.

[0144] (14) The Ag electrode was prepared by thermal evaporation with a thickness of 150 nm to complete the battery preparation.

[0145] Example 2

[0146] The method is basically the same as Example 1, except that in step (10), the concentration of the ultraviolet absorption solution is 1 mg / mL.

[0147] Example 3

[0148] The method is basically the same as Example 1, except that steps (8) and (9) of Example 1 are replaced by the following steps:

[0149] The perovskite light absorbing layer Cs is prepared by the anti-solvent method on the surface of the SAM layer prepared in step (7) away from the NiOx layer. 0.25 FA 0.75 Pb(I 0.8 Br 0.2 ) 3 The precursor solution for preparing the perovskite light absorbing layer includes a passivation material, polymethyl methacrylate, and the concentration of the passivation material in the precursor solution is 0.5 mg / mL.

[0150] Example 4

[0151] The method is basically the same as Example 1, except that in step (5), the weight average molecular weight of polymethyl methacrylate is 350,000 Da.

[0152] Example 5

[0153] The method is basically the same as Example 1, except that in step (5), the concentration of the passivation solution is 1 mg / mL.

[0154] Example 6

[0155] The method is basically the same as Example 1, except that in step (6), the concentration of the ultraviolet absorption solution is 0.1 mg / mL.

[0156] Comparative Example 1

[0157] The method is basically the same as Example 4, except that step (10) is omitted and there is no ultraviolet absorption layer.

[0158] Comparative Example 2

[0159] The method is basically the same as Example 4, except that step (9) is omitted and there is no passivation layer.

[0160] Comparative Example 3

[0161] The method is basically the same as Example 4, except that steps (8) to (10) of Example 1 are replaced by the following steps:

[0162] The perovskite light absorbing layer Cs was prepared on the surface of the SAM layer away from the NiOx layer by the anti-solvent method. 0.25 FA 0.75 Pb(I 0.8 Br 0.2 ) 3, the precursor solution for preparing the perovskite light absorbing layer includes the ultraviolet absorbing material 2-hydroxybenzophenone, and the concentration of the ultraviolet absorbing material in the precursor solution is 0.8 mg / mL;

[0163] A passivation layer is prepared on the surface of the perovskite light absorbing layer prepared in step (4) away from the SAM layer by spin coating. The passivation material is polymethyl methacrylate, the solvent is ethyl acetate, and the concentration of the passivation solution is 0.5 mg / mL.

[0164] Comparative Example 4

[0165] The method is basically the same as Example 4, except that steps (9) to (10) of Example 1 are replaced by the following steps:

[0166] A passivation mixed layer was prepared on the surface of the perovskite light absorbing layer away from the SAM layer by spin coating. The passivation mixed solution for preparing the passivation mixed layer included a passivation material and an ultraviolet absorption material. The passivation material was polymethyl methacrylate, the ultraviolet absorption material was 2-hydroxybenzophenone, the solvent was ethyl acetate and ethanol, the concentration of the passivation material was 0.5 mg / mL, and the concentration of the ultraviolet absorption material was 0.8 mg / mL.

[0167] Comparative Example 5

[0168] The difference from Example 4 is that the ultraviolet absorption layer is disposed between C60 and the hole blocking layer. Steps (10) to (12) of Comparative Example 5 are as follows:

[0169] (10) The C60 layer was prepared by thermal evaporation with a thickness of 12 nm;

[0170] (11) A UV absorption layer was prepared on the surface of the C60 layer by a spin coating method. The UV absorption material was 2-hydroxybenzophenone, the solvent was ethanol, and the concentration of the UV absorption solution was 0.80 mg / mL.

[0171] (12) Preparation of SnO by atomic layer deposition 2 Hole blocking layer, thickness is 15 nm.

[0172] The stacked cells prepared in each embodiment and comparative example were subjected to performance tests of open circuit voltage, short circuit current density, fill factor and energy conversion efficiency. The IV curve was used for the test. The test conditions were: AM 1.5G standard solar spectrum, irradiance of 1000W / m 2 The experimental test results are shown in Table 1. PCE represents the energy conversion efficiency in %, Voc represents the open circuit voltage in V, and Jsc represents the short circuit current density in mA / cm 2 , FF stands for fill factor, the unit is %.

[0173] The stacked cells prepared in each embodiment and comparative example were subjected to a stability performance test, the test light intensity was 1 sun intensity, the test temperature was 23° C., the test humidity was <10%, and the energy conversion efficiency retention rate after 28 days was recorded.

[0174] The results are shown in Table 1.

[0175] Table 1

[0176]

[0177] As can be seen from Table 1, compared with Comparative Example 1, the stability of the perovskite solar cells prepared in each embodiment is better, and the perovskite solar cells prepared in the embodiment also maintain relatively high Voc, FF and PCE; wherein, compared with Example 6, the concentration of the ultraviolet absorption solution used in Example 1 and Step (10) of Example 2 brings about better stability, wherein the concentration of the ultraviolet absorption solution used in Example 1 is better; compared with Example 5, the concentration of the passivation solution used in Step (9) of Example 1 brings about better stability; compared with Example 4, the number average molecular weight of the passivation material used in Example 1 brings about better stability; compared with Example 4, Comparative Example 2 has no passivation layer, resulting in a decrease in FF and PCE; Comparative Example 3 adds ultraviolet absorption material to the perovskite light absorption layer, resulting in a certain decrease in Voc, FF and PCE; in Comparative Example 4, the ultraviolet absorption material and the passivation material are mixed together for use, resulting in a certain decrease in Voc, FF and PCE. In Comparative Example 5, the ultraviolet absorption layer is prepared between the C60 electron transport layer and the hole blocking layer SnO 2 The gap between them will hinder the extraction of carriers, resulting in a significant drop in Voc and FF.

[0178] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0179] The above-described embodiments only express several implementation methods of the present application, which is convenient for understanding the technical solution of the present application in detail, but it cannot be understood as limiting the scope of protection of the invention patent. It should be pointed out that for ordinary technicians in this field, without departing from the concept of the present application, several modifications and improvements can be made, which all belong to the scope of protection of the present application. It should be understood that the technical solutions obtained by those skilled in the art through logical analysis, reasoning or limited experiments on the basis of the technical solutions provided in the present application are all within the scope of protection of the claims attached to the present application. Therefore, the scope of protection of the patent of this application shall be based on the contents of the attached claims, and the description and drawings can be used to explain the contents of the claims.

Claims

1. A perovskite solar cell, characterized in that: It includes a first electrode, a first carrier transport layer, a perovskite light absorption layer, an ultraviolet absorption layer, a second carrier transport layer and a transparent conductive electrode which are stacked, wherein the perovskite light absorption layer includes a first passivation material; or a passivation layer is provided between the perovskite light absorption layer and the ultraviolet absorption layer, and the passivation layer includes a second passivation material.

2. The perovskite solar cell according to claim 1, characterized in that The ultraviolet absorption layer includes a benzophenone ultraviolet absorption material; optionally, the benzophenone ultraviolet absorption material includes at least one of 2-hydroxybenzophenone, (2-hydroxy-4-methoxyphenyl) benzophenone, 2,4-dihydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-octyloxybenzophenone and 2,2'-dihydroxy-4,4'-dimethoxybenzophenone.

3. The perovskite solar cell according to claim 1, characterized in that The first passivation material includes at least one of PMMA and an organic ammonium salt; optionally, the organic ammonium salt includes at least one of PEAI, OAI, PDADI, PEI and PECl.

4. The perovskite solar cell according to claim 3, characterized in that The second passivation material includes at least one of PMMA, PDMS and PVDF.

5. The perovskite solar cell according to claim 4, characterized in that The weight average molecular weight of the second passivation material is 100000 Da~350000 Da.

6. The perovskite solar cell according to any one of claims 1 to 5, characterized in that The thickness of the perovskite light-absorbing layer is 10 nm~100 μm, and the band gap is 0.9 eV~3.0 eV.

7. The perovskite solar cell according to any one of claims 1 to 5, characterized in that The perovskite light absorbing layer comprises ABX3, wherein A comprises at least one of a monovalent organic cation and a monovalent inorganic cation, B comprises a divalent metal cation, and X comprises a monovalent anion; optionally, the perovskite light absorbing layer satisfies at least one of the following characteristics: (1) A includes Cs + , Rb + 、CH3NH3 + and CH2(NH2)2 + At least one of; (2) B includes Pb 2+ , Cu 2+ 、Zn 2+ , Ga 2+ Sn 2+ and Ca 2+ At least one of; (3) X includes I - Br - , Cl - 、F - and SCN - At least one of .

8. The perovskite solar cell according to any one of claims 1 to 5, characterized in that One of the first carrier transport layer and the second carrier transport layer is a hole transport layer, and the other is an electron transport layer; Optionally, the hole transport layer comprises at least one of NiOx, F6TCNQ, PBCDT, 2PACz, MeO-2PACz, PTAA, PEDOT:PSS, F4TCNQ and Spiro-MeOTAD; and / or The electron transport layer includes at least one of SnO2, C60, PCBM, TiO2, ICBA and ZnO.

9. A method for preparing a perovskite solar cell, characterized in that: The following steps are involved: Preparing a first carrier transport layer on the surface of the first electrode; Preparing a perovskite light absorbing layer on a surface of the first carrier transport layer away from the first electrode; Preparing an ultraviolet absorption layer on a surface of the perovskite light absorption layer away from the first carrier transport layer; Sequentially preparing a second carrier transport layer and a transparent conductive electrode on a surface of the ultraviolet absorption layer away from the perovskite light absorption layer; Wherein, the perovskite light absorbing layer includes a first passivation material, or, before the step of preparing the ultraviolet absorption layer, the step further includes preparing a passivation layer on a surface of the perovskite light absorbing layer away from the first carrier transport layer, and the passivation layer includes a second passivation material.

10. The preparation method according to claim 9, characterized in that: The method for preparing the ultraviolet absorption layer includes one of coating, scraping, evaporation and printing.

11. The preparation method according to claim 9, characterized in that: The concentration of the ultraviolet absorption solution for preparing the ultraviolet absorption layer is 0.1 mg / mL to 1 mg / mL.

12. The preparation method according to any one of claims 9 to 11, characterized in that: The preparation method meets one of the following characteristics: (1) The perovskite light absorbing layer includes a first passivation material, and the concentration of the first passivation material in the precursor solution for preparing the perovskite light absorbing layer is 0.1 mg / mL to 0.5 mg / mL; (2) In the step of preparing the passivation layer, the concentration of the passivation solution for preparing the passivation layer is 0.05 mg / mL to 1 mg / mL.

13. A laminated battery, characterized in that: The invention comprises a top cell and a bottom cell, wherein the top cell comprises the perovskite solar cell according to any one of claims 1 to 8 or the perovskite solar cell prepared by the preparation method according to any one of claims 9 to 12.

14. The stacked battery according to claim 13, characterized in that: The bottom cell includes a crystalline silicon cell.

15. A method for preparing a laminated battery, characterized in that: The following steps are involved: Prepare a first carrier transport layer on the surface of the crystalline silicon cell; Preparing a perovskite light absorbing layer on a surface of the first carrier transport layer away from the first electrode; Preparing an ultraviolet absorption layer on a surface of the perovskite light absorption layer away from the first carrier transport layer; Sequentially preparing a second carrier transport layer, a transparent conductive layer, and a second electrode on a surface of the ultraviolet absorption layer away from the perovskite light absorption layer; Wherein, the perovskite light absorbing layer includes a first passivation material, or, before the step of preparing the ultraviolet absorption layer, the step further includes preparing a passivation layer on a surface of the perovskite light absorbing layer away from the first carrier transport layer, and the passivation layer includes a second passivation material.

16. A photovoltaic module, characterized in that: It includes a perovskite solar cell as described in any one of claims 1 to 9, a perovskite solar cell prepared by the preparation method as described in any one of claims 9 to 12, a stacked cell as described in any one of claims 13 to 14, or a stacked cell prepared by the preparation method as described in claim 15.

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