Preceding-stage pipeline assembly and semiconductor processing device

Abstract

The invention discloses a preceding-stage pipeline assembly and a semiconductor processing device, and relates to the technical field of semiconductors. The preceding-stage pipeline assembly is used for exhausting processing modules of two cavities, and comprises two air inlets, a first pipeline, a second pipeline, a third pipeline and a fourth pipeline, and each air inlet can be communicated with an extraction opening of the corresponding cavity in a matched mode; one ends of the two exhaust pipelines are respectively provided with the air inlets, and the directions of the two exhaust pipelines are consistent, so that the flowing directions of fluid in the two exhaust pipelines are consistent; the three-way unit comprises two inflow ports and an outflow port; and one ends of the two connecting pipelines are connected with the two exhaust pipelines respectively, the other ends of the two connecting pipelines are connected with the two inflow ports of the three-way unit respectively, and the outflow port of the three-way unit can be communicated to an exhaust device. According to the invention, the directions of the exhaust pipelines of the preceding-stage pipeline assemblies matched with the extraction openings of the two chambers are consistent, so that the consistency of substrate processing is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a front-stage pipeline component and a semiconductor processing device. Background Art

[0002] Semiconductor manufacturing processes include dozens of processes such as lithography, etching, thin film deposition, cleaning, annealing, and ion implantation. Among them, lithography, etching, and thin film deposition are the three most core processes. Deposition objects include various barrier layers, dielectric layers, various metal films, etc. The deposition process usually involves a variety of reaction gas reactants undergoing chemical reactions in a low-pressure chamber, and the reaction products are deposited on the target substrate to form a uniform and dense film. The deposition quality will directly affect the performance and yield of semiconductor devices. During the deposition process, it is necessary to continuously introduce reaction gases into the reaction chamber while exhausting the reaction chamber through an exhaust device to extract reaction byproducts from the reaction chamber and maintain the reaction chamber at a certain low pressure. The front-stage pipeline assembly is used to exhaust the reaction chamber, one end of which is connected to the exhaust port of the reaction chamber, and the other end is directly or indirectly connected to the exhaust device for exhaust. Since the exhaust method will affect the flow and distribution of the reaction gas in the reaction chamber, the design of the front-stage pipeline assembly is very important.

[0003] In addition, in order to pursue higher production efficiency, current deposition equipment and etching equipment mostly use dual-chamber processing devices. The dual-chamber setting brings higher requirements to the layout of the front-stage pipeline components, which not only needs to consider the position of the connection with the reaction chamber, but also needs to consider the layout of the front-stage pipeline components to achieve high-quality process processing and consistency of substrate processing in different reaction chambers.

[0004] The background description provided by the present invention is for the purpose of generally presenting the background of the present disclosure. The description in this background section and the description that could not be determined as prior art at the time of filing the application are neither explicitly nor implicitly admitted to be prior art for the present disclosure. Summary of the invention

[0005] The present invention provides a front-stage pipeline component and semiconductor processing equipment. The front-stage pipeline component improves the consistency of substrate deposition in different reaction chambers by making the flow direction of fluid in an exhaust pipeline connected to a chamber exhaust port consistent.

[0006] In order to achieve the above-mentioned object of the invention, the present invention provides a front-stage pipeline assembly on one hand:

[0007] A front-stage duct assembly for exhausting a processing module having two chambers, the front-stage duct assembly comprising:

[0008] Two air inlets, each of which can be matched and communicated with the air extraction port of each chamber;

[0009] Two exhaust pipes, one end of each of the two exhaust pipes is provided with the air inlet, and the two exhaust pipes run in the same direction so that the flow direction of the fluid therein is consistent;

[0010] A three-way unit including two inflow ports and one outflow port;

[0011] Two connecting pipes, one end of the two connecting pipes is respectively connected to the two exhaust pipes, and the other end is respectively connected to the two inlet ports of the three-way unit, and the outlet port of the three-way unit can be connected to the exhaust device.

[0012] Optionally, a pipe protrusion is arranged at the connection between the exhaust pipe and the connecting pipe.

[0013] Optionally, the side wall of the exhaust pipe is provided with an opening connected to the connecting pipe, and the exhaust pipe continues to extend after passing through the opening and forms the pipe protrusion.

[0014] Optionally, the end surface of the pipeline protrusion is arc-shaped or plane-shaped.

[0015] Optionally, the cross-sectional shape of the exhaust pipe and the connecting pipe is polygonal or annular.

[0016] Optionally, the connecting pipe comprises a first connecting pipe section and a second connecting pipe section, and the connection between the first connecting pipe section and the second connecting pipe section is at an angle or an arc-shaped bend.

[0017] Optionally, the angle is a right angle.

[0018] Optionally, flow directions of the fluid in the first connecting pipe section and the second connecting pipe section are perpendicular to each other.

[0019] Optionally, flow directions of the fluid in the exhaust pipe and the connecting pipe are perpendicular to each other.

[0020] Optionally, the three-way unit is T-shaped.

[0021] Optionally, the front-stage pipeline assembly is configured symmetrically.

[0022] Optionally, the azimuth angles of the exhaust ports of each chamber relative to the base for supporting the wafer in the chamber are equal.

[0023] On the other hand, the present application also provides a semiconductor processing device:

[0024] A semiconductor processing device, comprising two chambers arranged on the left and right, characterized in that the azimuth angles of the gas extraction ports of each chamber relative to a base for carrying a wafer in the chamber are equal, and the gas extraction ports are connected to an exhaust device through a front-stage pipeline, and the front-stage pipeline comprises:

[0025] Two air inlets, each of which can be matched and communicated with the air extraction port of each chamber;

[0026] Two exhaust pipes, one end of the two exhaust pipes is respectively configured with the air inlet, and the directions of the two exhaust pipes are consistent so that the flow directions of the fluids therein are consistent.

[0027] Optionally, a support seat for carrying the substrate is provided in the chamber, and the exhaust pipe is parallel to the upper surface of the support seat.

[0028] Optionally, the upper surface of the support seat is centrally symmetrical, and an extension line of the center line of the exhaust duct intersects with a center vertical line of the upper surface.

[0029] Optionally, the center line of the exhaust duct is perpendicular to the side of the chamber where the air extraction port is located.

[0030] Optionally, each of the exhaust ports and the substrate transfer port of each of the chambers are respectively arranged on opposite sides of the chamber.

[0031] Optionally, each chamber further comprises an air pumping ring, and the air pumping port is arranged on the air pumping ring.

[0032] Optionally, the front-stage pipeline further comprises: a three-way unit including two inflow ports and one outflow port;

[0033] Two connecting pipes, one end of the two connecting pipes is respectively connected to the two exhaust pipes, and the other end is respectively connected to the two inlet ports of the three-way unit, and the outlet port of the three-way unit can be connected to the exhaust device.

[0034] Optionally, a pipe protrusion is arranged at the connection between the exhaust pipe and the connecting pipe.

[0035] Optionally, the side wall of the exhaust pipe is provided with an opening connected to the connecting pipe, and the exhaust pipe continues to extend after passing through the opening and forms the pipe protrusion.

[0036] Optionally, the cross-sectional area of ​​the exhaust pipe is larger than the cross-sectional area of ​​the connecting pipe.

[0037] Optionally, the distance between the opening and the air suction port is 25-60 mm.

[0038] The beneficial effect of the present invention is that the present invention makes the exhaust ports of each chamber located on the same side of each chamber, and the exhaust pipes of the front-stage pipe assembly matched with the chamber exhaust ports have the same direction, that is, when exhausting, the flow direction of the fluid flowing out of the exhaust port and flowing through the exhaust pipe is consistent to improve the consistency of substrates processed in a processing module with two chambers. In addition, the present application further configures a pipe protrusion at the connection between the exhaust pipe of the front-stage pipe assembly and its connecting pipe, and the pipe protrusion creates turbulence in the exhaust pipe to reduce the impact on the distribution of the reaction gas in the chamber when exhausting through the exhaust port on one side of the chamber, thereby improving the uniformity of the distribution of the reaction gas on the substrate surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 is a schematic diagram of a semiconductor processing cluster device;

[0040] Figure 2 is a front view schematic diagram of a deposition processing device in the background art;

[0041] Figure 3 is a schematic top view of a deposition processing device in the background art;

[0042] Figure 4 It is a schematic diagram of a deposition processing device in the background technology after deposition processing on a substrate;

[0043] Figure 5 It is a front view schematic diagram of a deposition processing device and a front-stage pipeline assembly thereof provided by one embodiment of the present invention;

[0044] Figure 6-7 It is a side view schematic diagram of a deposition processing device and a front-stage pipeline assembly thereof provided by an embodiment of the present invention;

[0045] Figure 8 is a top view schematic diagram of a deposition processing device and a front-stage pipeline assembly thereof provided by an embodiment of the present invention; DETAILED DESCRIPTION

[0046] The following is a further detailed description of the gas delivery device, atomic layer deposition equipment and the method of use thereof proposed in the present invention in combination with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects that can be produced by the present invention and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present invention.

[0047] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0048] The deposition processing device is used to process substrates such as semiconductor wafers in semiconductor processes, such as depositing insulating dielectric layers, metal layers in metal interconnects, etc. in chip manufacturing processes. During the deposition process, the substrate is placed on a support seat in the chamber of the deposition processing device, and the process gases required for the deposition process are introduced into the chamber. These gases react on the surface of the substrate and generate a target film layer. In order to avoid the side reactants generated by the reaction from affecting the deposition and to ensure the vacuum environment required for the deposition, it is necessary to set an exhaust port on the chamber to evacuate the chamber. The front-stage pipeline assembly is a key component for matching, connecting and evacuating the exhaust port. It can be understood that not only deposition equipment has such a demand, but some other semiconductor processing devices also have similar demands, such as semiconductor etching processing devices. Therefore, the present invention can also be used for these types of processing equipment.

[0049] And as semiconductor devices are used more and more widely in life, the demand for semiconductor devices is also increasing. Therefore, in order to improve production efficiency, the application of dual-chamber deposition processing devices is increasing.

[0050] In order to improve the level of automation, multiple semiconductor processing devices are usually integrated into a semiconductor processing system tool, and each of the multiple semiconductor processing devices can be configured to perform one or more corresponding processes on a substrate. Figure 1 As shown, it is a semiconductor processing system tool. In the present invention, the semiconductor processing device is described as a deposition processing device, that is, the semiconductor processing performed in the reaction chamber is a deposition process. The semiconductor processing system tool includes a deposition processing device 10 with a dual chamber, a transfer module (TM) 20 and a front-end module (EFEM) 30. The deposition processing device 10 has two processing chambers 11 arranged in parallel. The number of deposition processing devices 10 is 3, which are arranged on three sides of the transfer module 20, and the front-end module 30 is arranged on the other side of the transfer module 20. The substrate to be processed is loaded into the chamber of the deposition processing device 10 through the port of the loading station of the equipment front-end module 30 through the transfer module 20. In some embodiments, there is only one deposition processing device 10, and other types of processing devices, such as etching processing devices, can be arranged on the other two sides of the transfer module 20. After the substrate is processed by the deposition processing device 10, it can be directly taken out by the transfer module 20 and transferred to the etching processing device for etching processing.

[0051] See also Figure 2-3 , is a schematic diagram of the structure of a deposition processing device 100 in the background technology of the present invention. The two chambers 110 of the deposition processing device 100 are arranged in parallel, and in order to simplify the structure of the device, the two chambers 110 share a front-stage pipeline assembly 130. In order to facilitate the arrangement, the exhaust ports of the two chambers 110 are arranged opposite to each other, and the front-stage pipeline assembly 130 is arranged between the two chambers 110. The front-stage pipeline assembly 130 is T-shaped, and the exhaust ports of the two chambers 110 are connected through a transverse pipeline, and are connected to the exhaust device through a vertical pipeline in the middle position of the transverse pipeline. The connection includes direct connection and indirect connection. During the deposition process, the substrate 120 is placed in the chamber 110, the reaction gas is introduced into the chamber, and a thin film is deposited on the surface of the substrate 120. During the deposition process, the exhaust device exhausts the chamber 110 through the front-stage pipeline assembly 130, extracts the reaction byproducts from the chamber 110, and maintains the chamber 110 in the vacuum environment required for the deposition process.

[0052] See also Figure 4, which is a schematic diagram of a thin film on a substrate 120 after deposition in a parallel chamber 110. Since the exhaust ports of the two chambers 110 of the same deposition processing device are arranged relative to each other, that is, the exhaust of the two chambers 110 is symmetrical about the symmetry line between the two chambers 110, for one chamber, since the exhaust port is arranged on one side of the chamber, the distances of airflows at different positions in the chamber to reach the exhaust port are different, resulting in that the exhaust will affect the distribution of the reaction gas in the chamber 110. Therefore, without considering the influence of other factors on the distribution of the reaction gas, the symmetrical exhaust method will lead to a symmetrical distribution of the reaction gas in the chamber 110. The thin film deposited on the substrate will be affected by the distribution of the reaction gas, and it is difficult to achieve completely uniform growth of the thin film. The result of such an exhaust method is that the thin films deposited on the two substrates 120 are also symmetrical about the symmetry line, that is, the thin films on the two substrates processed simultaneously are mirror-symmetrical. In the semiconductor manufacturing process, there may often be dozens or even hundreds of processing steps. After the deposition process, there are usually plasma etching, continued deposition and other processes. When performing these processes, it is expected that the substrate to be processed maintains consistency with other substrates. When these substrates are further processed, targeted adjustments can be made according to their surface morphology, thereby reducing the adverse effects of uneven deposited films on subsequent processes or final products. Of course, there are other benefits to consistency between substrates, which are not described in detail here, but it can be understood that ensuring consistency between substrates is an important goal of substrate processing. However, the thin film deposited on the substrate 120 in the background technology is mirror-symmetrical, which destroys the consistency between substrates, so it is necessary to improve the deposition processing device.

[0053] like Figure 5-8 As shown in FIG. 2 , a deposition processing device 200 and a front-stage pipeline assembly 230 thereof provided by the present invention are shown. Similarly, the deposition processing device 200 is arranged on one side of the transmission module 20, and the deposition processing device 200 is provided with a substrate transmission port on the side opposite to the transmission module 20. The deposition processing device 200 also includes two chambers 210 arranged on the left and right, each chamber 210 is provided with a gas extraction port, and the gas extraction ports 211 of different chambers 210 are arranged on the same side of the chamber 210, as shown in FIG. Figure 5 In some embodiments, the chamber 210 further includes an exhaust ring arranged around the substrate, and the exhaust port 211 is arranged on the exhaust ring. Optionally, the exhaust port 211 is arranged on the outer wall of the chamber. At the same time, the inner wall of the exhaust ring is evenly provided with exhaust holes to improve the exhaust uniformity.

[0054] In addition, the front-stage pipeline assembly 230 includes two air inlets 231 and two exhaust pipes 232 corresponding to the air inlets 231, the two air inlets 231 are configured by the two exhaust pipes 232 and the directions of the two exhaust pipes 232 are consistent, each air inlet 231 is connected to the exhaust port 211 of each chamber 210, and when the chamber 210 is evacuated, the flow direction of the reaction gas in the two exhaust pipes 232 is also consistent. By making the azimuth angle of the exhaust port of each chamber equal relative to the base for carrying the wafer in the chamber, and making the exhaust pipes 232 connected to the exhaust port 211 consistent, the exhaust of the two chambers 210 is guaranteed to be consistent, thereby ensuring the consistency of the distribution of the reaction gas in the chamber 210, avoiding the mirror symmetry of the thin film deposited due to the symmetrical setting, and improving the consistency between substrates. In order to reduce the influence of exhaust on the uniformity of the reaction gas in the chamber and further improve the exhaust uniformity, the front-stage pipeline assembly 230 is optionally configured in a bilaterally symmetrical manner.

[0055] In addition, the front-stage pipeline assembly 230 also includes a three-way unit 234 and two-way connecting pipelines 233 respectively connected to the exhaust pipeline 232, and the three-way unit 234 includes two inlet ports 2341 and an outlet port 2342; one end of the two-way connecting pipeline 233 is respectively connected to the two-way exhaust pipeline, and the other end is respectively connected to the two inlet ports 2341 of the three-way unit 234, and the outlet port 2342 of the three-way unit 234 is used to connect to the exhaust device. By converging the two-way exhaust pipelines 232 into one through the three-way unit 234, and then exhausting through one exhaust device, it is possible to avoid using multiple exhaust devices or multiple exhaust pipelines connected to the exhaust device, reduce the volume of the deposition processing device, and facilitate the arrangement of the front-stage pipeline assembly 230, and also provide more space for the maintenance of the subsequent deposition processing device. Optionally, the three-way unit 234 is T-shaped, and the T-shaped design can make the fluids in the two-way connecting pipelines 233 flow relative to each other during exhaust, blocking each other, so as to balance the exhaust rate of the two-way connecting pipelines 233.

[0056] In order to reduce the influence of the exhaust gas on the distribution of the reaction gas in the chamber 210 caused by the exhaust gas on one side of the chamber 210, a pipe protrusion 235 is arranged at the connection between the exhaust pipe 232 and the connecting pipe 233. The pipe protrusion includes a space connected to the interior of the front-stage pipe assembly 230. The existence of the space causes the fluid generated during the exhaust gas to collide when flowing through the connection between the exhaust pipe 232 and the connecting pipe 233. The collision can affect the exhaust gas flow at the exhaust port 211, reduce the flow rate in the central area of ​​the exhaust port 211, and thus improve the uniformity of the exhaust gas in each area of ​​the chamber 210 when the exhaust gas is exhausted through the exhaust port 211. Optionally, the side wall of the exhaust pipe 232 is provided with an opening 2321, which refers to the side wall of the pipe in the circumferential direction, rather than specifically the side walls on both sides in the vertical direction. The connecting pipe 233 is connected to the exhaust pipe 232 through the opening 2321. After passing through the opening 2321, the exhaust pipe 232 continues to extend a distance along its direction to form the pipe protrusion 235. Optionally, the distance between the opening 2321 and the air extraction port is 35-70 mm, optionally, 50 mm. The natural formation of the pipe protrusion 235 by the exhaust pipe 232 can reduce the assembly process. Optionally, the distance that the exhaust pipe 232 continues to extend after passing through the opening 2321 is 5-15 mm, optionally, the extension distance is 7 mm. The shape of the end face of the pipe protrusion 235 can be designed according to the arrangement of the front-stage pipe assembly 230 and the chamber 210 to guide the airflow to form turbulence. Optionally, the shape of the end face is an arc surface or a plane. In some other embodiments, the pipe protrusion 235 can also be a component that is concave in the direction of the exhaust pipe 232 of the front-stage pipe assembly 230, as long as it can cause the airflow to collide and create turbulence, and the present invention is not limited thereto.

[0057] The turbulent flow produced is not only related to the end face shape of the pipeline protrusion 235, but also to the cross-sectional shape of the exhaust pipeline 232 and the connecting pipeline 233. Optionally, the cross-sectional shape can be polygonal or annular. Optionally, the cross-sectional shape of the exhaust pipeline 232 is polygonal, and the cross-sectional shape of the connecting pipeline 233 is annular. By adjusting the polygonal shape of the cross-sectional shape of the exhaust pipeline 232, the flow rate in the central area and the flow rate in the edge area of ​​the cross-sectional shape of the exhaust pipeline 232 can be adjusted, thereby improving the uniformity of the exhaust of the chamber 210. For example, the area of ​​the middle part of the polygonal cross-sectional shape is smaller than the area on both sides, thereby reducing the flow rate in the middle area of ​​the pipeline. Optionally, the cross-sectional area of ​​the exhaust pipeline 232 is larger than the cross-sectional area of ​​the connecting pipeline 233. Such a setting can reduce the area of ​​the connection when the airflow flows from the exhaust pipeline 232 to the connecting pipeline 233, thereby reducing the influence of the exhaust of the connecting pipeline 233 on the turbulence in the exhaust pipeline 232, and ensuring the effect of the turbulence in the exhaust pipeline 232.

[0058] The connecting pipe 233 also includes a first connecting pipe section 2331 and a second connecting pipe section 2332, and the connection between the first connecting pipe section 2331 and the second connecting pipe section 2332 is at an angle or an arc angle. Optionally, the connection is an arc angle. When it is an arc angle, the fluid that collides with the pipe protrusion 235 can be rectified when flowing through the arc angle to reduce the collision intensity and avoid the pipe vibration that may be caused by the air flow collision. When the connection between them is at an angle, the flow rate of the fluid will be slowed down when it flows through. By reducing the flow rate at this place, the effect of the turbulence created by the pipe protrusion 235 on the air extraction at the air extraction port 211 can be further increased. Optionally, the angle is a right angle. In a specific implementation, the shape of the connection between the first connecting pipe segment 2331 and the second connecting pipe segment 2332 can be designed according to actual needs, but optionally, it should be ensured that the flow direction of the fluid in the first connecting pipe segment 2331 and the second connecting pipe segment 2332 is vertical. Optionally, the first connecting pipe segment 2331 is configured in the vertical direction and the second connecting pipe segment 2332 is configured in the horizontal direction.

[0059] Furthermore, optionally, in order to increase the effect of turbulence on the exhaust at the exhaust port 211 and to make the exhaust of the chamber 210 through the front-stage pipe assembly 230 more uniform, the flow directions of the fluid in the exhaust pipe 232 and the connecting pipe 233 are perpendicular to each other.

[0060] It is easy to understand that the quality of thin film deposition on the substrate 220 is also related to the position of the substrate 220 relative to the gas extraction port 211 and the front-stage pipeline assembly 230. During the process, the substrate 220 is supported by a support seat (not shown in the figure) inside the chamber. In order to reduce the influence of the exhaust gas on the distribution of the reaction gas on the upper surface of the substrate, the exhaust pipe 232 is parallel to the upper surface of the support seat. In addition, optionally, the upper surface of the support seat is centrally symmetrical, and the extension line of the center line of the exhaust pipe passes through the center O of the upper surface of the support seat (ideally, the center O coincides with the center of the substrate) to improve the uniformity of the exhaust gas.

[0061] It can be seen that the present invention sets the exhaust ports of each chamber on the same side of the chamber and makes the exhaust pipes of the front-stage pipe assembly matched with the exhaust ports have the same direction, so as to improve the consistency between substrates when depositing thin films in the deposition processing equipment with dual chambers, and provide convenience for the processing of subsequent processes. In addition, the present invention also configures a pipe protrusion at the connection between the exhaust pipe of the front-stage pipe assembly and the connecting pipe to generate airflow collision when the fluid flows through, and controls the airflow velocity by artificially creating turbulence, so as to increase the uniformity of air extraction through the exhaust port.

[0062] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A front-stage duct assembly for exhausting a processing module having two chambers, the front-stage duct assembly comprising: Two air inlets, each of which can be matched and communicated with the air extraction port of each chamber; Two exhaust pipes, one end of each of the two exhaust pipes is provided with the air inlet, and the two exhaust pipes run in the same direction so that the flow direction of the fluid therein is consistent; A three-way unit including two inflow ports and one outflow port; Two connecting pipes, one end of the two connecting pipes is respectively connected to the two exhaust pipes, and the other end is respectively connected to the two inlet ports of the three-way unit, and the outlet port of the three-way unit can be connected to the exhaust device.

2. The front-stage pipeline assembly according to claim 1, characterized in that: A pipeline protrusion is arranged at the connection point between the exhaust pipeline and the connecting pipeline.

3. The front-stage pipeline assembly according to claim 2, characterized in that: The side wall of the exhaust pipe is provided with an opening connected to the connecting pipe, and the exhaust pipe continues to extend after passing through the opening to form the pipe protrusion.

4. The front-stage pipeline assembly according to claim 3, characterized in that: The end surface of the pipeline protrusion is arc-shaped or plane-shaped.

5. The front-stage pipeline assembly according to claim 1, characterized in that: The cross-sectional shapes of the exhaust pipe and the connecting pipe are polygonal or annular.

6. The front-stage pipeline assembly according to claim 1, characterized in that: The connecting pipe comprises a first connecting pipe section and a second connecting pipe section, and the connection between the first connecting pipe section and the second connecting pipe section is at an angle or an arc-shaped bend.

7. The front-stage pipeline assembly according to claim 6, characterized in that: The angle is a right angle.

8. The front-stage pipeline assembly according to claim 6, characterized in that: The flow directions of the fluid in the first connecting pipe section and the second connecting pipe section are perpendicular to each other.

9. The front-stage pipeline assembly according to any one of claims 1 to 8, characterized in that: The flow directions of the fluid in the exhaust pipe and the connecting pipe are perpendicular to each other.

10. The front-stage pipeline assembly according to claim 9, characterized in that: The three-way unit is T-shaped.

11. The front-stage pipeline assembly according to claim 10, characterized in that: The front-stage pipeline assembly is configured symmetrically.

12. The front-stage pipeline assembly according to claim 1, characterized in that: The azimuth angles of the gas extraction ports of the chambers relative to the base for carrying the wafer in the chambers are equal.

13. A semiconductor processing device, comprising two chambers arranged on the left and right, characterized in that: The gas extraction ports of each chamber have the same azimuth angle relative to a base for carrying wafers in the chamber, and the gas extraction ports are connected to an exhaust device through a front-stage pipeline assembly, and the front-stage pipeline assembly includes: Two air inlets, each of which can be matched and communicated with the air extraction port of each chamber; Two exhaust pipes, one end of the two exhaust pipes is respectively provided with the air inlet, and the directions of the two exhaust pipes are consistent so that the flow direction of the gas therein is consistent.

14. A semiconductor processing device according to claim 13, characterized in that: A support seat for carrying a substrate is provided in the chamber, and the exhaust pipe is parallel to the upper surface of the support seat.

15. A semiconductor processing device according to claim 14, characterized in that: The upper surface of the support seat is centrally symmetrical, and an extension line of the center line of the exhaust pipe intersects with a central vertical line of the upper surface.

16. A semiconductor processing device according to claim 14, characterized in that: The center line of the exhaust duct is perpendicular to the side of the chamber where the air extraction port is located.

17. A semiconductor processing device according to claim 13, characterized in that: Each of the exhaust ports and the substrate transfer port of each of the chambers are respectively arranged on opposite sides of the chamber.

18. A semiconductor processing device according to claim 13, characterized in that: Each chamber further comprises an air pumping ring, and the air pumping port is arranged on the air pumping ring.

19. A semiconductor processing device according to any one of claims 13 to 18, characterized in that: The front-stage pipeline further comprises: a three-way unit, comprising two inflow ports and one outflow port; Two connecting pipes, one end of the two connecting pipes is respectively connected to the two exhaust pipes, and the other end is respectively connected to the two inlet ports of the three-way unit, and the outlet port of the three-way unit can be connected to the exhaust device.

20. The foreline assembly according to claim 19, characterized in that: A pipeline protrusion is arranged at the connection point between the exhaust pipeline and the connecting pipeline.

21. The front stage pipeline assembly according to claim 20, characterized in that: The side wall of the exhaust pipe is provided with an opening connected to the connecting pipe, and the exhaust pipe continues to extend after passing through the opening to form the pipe protrusion.

22. The foreline assembly according to claim 21, characterized in that: The cross-sectional area of ​​the exhaust pipe is larger than the cross-sectional area of ​​the connecting pipe.

23. The foreline assembly according to claim 22, characterized in that: The distance between the opening and the air extraction port is 25-60 mm.

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