Composite conductor and preparation method and preparation device thereof

Abstract

The invention discloses a composite conductor and a preparation method and device thereof, and relates to the technical field of conductors. The preparation method of the composite conductor comprises the following steps: providing a conductor, wherein the conductor comprises a plurality of conductive metals and a plurality of graphene coating layers combined on the surfaces of the plurality of conductive metals; pouring a metal melt on the surface of the conductor, and connecting the metal melt with at least one conductive metal to form a first conductive layer; and preparing a first graphene deposition layer on the surface of the first conductive layer to form a first conductor, thereby obtaining the composite conductor. According to the preparation method of the composite conductor provided by the invention, the continuity of the graphene in the composite conductor can be improved, the content of the graphene in the composite conductor is increased, the uniform distribution of the graphene in the composite conductor is promoted, the graphene can fully play a role in improving the performance of the composite conductor, and the electrical conductivity and thermal conductivity of the composite conductor are improved; by adopting the mode of pouring the metal melt, the damage of the subsequent extrusion process to the uniform, ordered and continuous distribution structure of the graphene can be reduced, the cost is low, and the operation is simple.

Description

Technical Field

[0001] The present application relates to the field of conductor technology, and in particular to a composite conductor and a preparation method and a preparation device thereof. Background Art

[0002] Graphene has excellent properties such as high electrical conductivity, high thermal conductivity, high strength, high flexibility, strong chemical inertness, and excellent gas barrier properties. It is widely used in various fields, especially in the field of conductor technology. Graphene can significantly improve the electrical conductivity of metals (for example, copper, copper alloys, etc.). At present, there are two main technical routes for compounding metals with graphene:

[0003] The first is to mix graphene with molten metal in the hope of evenly distributing graphene in the metal, and then applying the excellent properties of graphene to the metal to improve the metal's electrical conductivity, thermal conductivity or corrosion resistance. However, adding graphene directly to molten metal is difficult to achieve uniform and orderly dispersion in the molten metal due to its low density, poor wettability with the metal matrix and easy agglomeration. In practice, graphene is more likely to agglomerate after being mixed into molten metal, which ultimately leads to a reduction in the comprehensive performance of the metal and graphene mixed material, and the inability to exert the excellent performance of graphene.

[0004] The second method is to deposit graphene on the metal surface and prepare the required metal material through a series of processes such as pressing, hot pressing, sintering, etc. Although this method can increase the graphene content to a certain extent, the orderly distribution of graphene is destroyed through subsequent processing, and the graphene is scattered in the metal body, unable to form a continuous graphene conductor structure, and the improvement of metal conductivity is limited.

[0005] Therefore, how to prepare graphene-copper composite conductors with high conductivity needs further improvement. Summary of the invention

[0006] In view of this, the present application provides a composite conductor and a preparation method and a preparation device thereof, aiming to prepare a composite conductor with high conductivity.

[0007] The embodiment of the present application is implemented as follows: a method for preparing a composite conductor comprises:

[0008] A conductor is provided, the conductor comprising a conductive metal and a graphene coating layer bonded to a surface of the conductive metal; the conductive metal comprises a first conductive metal, a second conductive metal, ... an Nth conductive metal arranged along a first direction, N being an integer ≥ 2; the graphene coating layer comprises a first graphene coating layer, a second graphene coating layer, ... an Nth graphene coating layer respectively corresponding to coating the first conductive metal, the second conductive metal, ... the Nth conductive metal;

[0009] Pouring a molten metal on the conductor, the molten metal connects one or more of the first conductive metal, the second conductive metal, ... the Nth conductive metal to form a first conductive layer;

[0010] A first graphene deposition layer is prepared on the surface of the first conductive layer to form a first conductor to obtain a composite conductor.

[0011] In some embodiments of the present application, the first conductive metal, the second conductive metal, and the Nth conductive metal are in the form of a tube, a rod, a strip, a sheet, or a wire, and have an outer diameter or thickness of 0.003 mm to 0.2 mm, and are made of one or more of copper, silver, a copper alloy, and a silver alloy;

[0012] The material of the metal melt is one or more of copper melt, copper alloy melt, silver melt, and silver alloy melt; the temperature is 1000° C. to 1300° C.;

[0013] The number of layers of the first graphene coating layer, the second graphene coating layer, ... the Nth graphene coating layer are 1 to 10 layers respectively.

[0014] In some embodiments of the present application, a direction of pouring the molten metal into the conductor is parallel to the first direction, or perpendicular to the first direction.

[0015] In some embodiments of the present application, after forming the first conductive layer and the first conductor, it also includes pouring molten metal on the first conductor, the molten metal connects one or more of the first conductive metal, the second conductive metal...the Nth conductive metal to form a second conductive layer, and preparing a second graphene deposition layer on the surface of the second conductive layer to form a second conductor...pouring molten metal on the N-1th conductor to form an Nth conductive layer, and preparing an Nth graphene deposition layer on the surface of the Nth conductive layer to form an Nth conductor, and the composite conductor includes the first conductor, the second conductor...the Nth conductor, wherein N is an integer ≥2.

[0016] In some embodiments of the present application, one or more of the first graphene coating layer, the second graphene coating layer...the Nth graphene coating layer is connected to one or more of the first graphene deposition layer, the second graphene deposition layer...the Nth graphene deposition layer.

[0017] In some embodiments of the present application, the thicknesses of the first conductive layer, the second conductive layer...the Nth conductive layer are respectively 0.01 mm to 2 mm; the number of layers of the first graphene deposition layer, the second graphene deposition layer...the Nth graphene deposition layer is respectively 1 to 10 layers.

[0018] In some embodiments of the present application, the thickness of the composite conductor is 0.02 mm to 20 mm.

[0019] In some embodiments of the present application, the first conductive metal, the second conductive metal...the Nth conductive metal are arranged closely along the first direction, and form a bundle conductor with the corresponding first graphene coating layer, the second graphene coating layer...the Nth graphene coating layer; the outer diameter of the bundle conductor is 1 mm to 20 mm.

[0020] In some embodiments of the present application, the first conductive metal, the second conductive metal...the Nth conductive metal are arranged at intervals along the first direction, and form an array conductor with the corresponding first graphene coating layer, the second graphene coating layer...the Nth graphene coating layer.

[0021] In some embodiments of the present application, the process of casting the conductor also includes a first cooling process.

[0022] In some embodiments of the present application, the first cooling includes introducing a first cooling gas; the first cooling gas includes one or more of nitrogen, helium, neon, argon, krypton, xenon, and radon; the temperature of the first cooling gas is 900° C. to 1000° C., and the volume flow rate is 300 sccm to 400 sccm; the time for introducing the first cooling gas is 20s to 80s; or

[0023] The first cooling includes placing in a coolant.

[0024] In some embodiments of the present application, after preparing the first graphene deposition layer, a second cooling process is further performed to obtain a composite conductor.

[0025] In some embodiments of the present application, the second cooling includes introducing a second cooling gas; the second cooling gas includes one or more of nitrogen, helium, neon, argon, krypton, xenon, and radon; the temperature of the second cooling gas is 500° C. to 600° C.; the time for introducing the second cooling gas is 10s to 30s; or

[0026] The second cooling includes placing in a coolant.

[0027] Correspondingly, an embodiment of the present application also provides a preparation device for a composite conductor, which is applied to the above-mentioned preparation method, including a mold, the mold containing a conductor, the conductor including a conductive metal and a graphene coating layer bonded to the surface of the conductive metal; the conductive metal includes a first conductive metal, a second conductive metal...an N-th conductive metal, N is an integer ≥2, and the first conductive metal, the second conductive metal...an N-th conductive metal are arranged along a first direction; the graphene coating layer includes a first graphene coating layer, a second graphene coating layer...an N-th graphene coating layer respectively corresponding to coating the first conductive metal, the second conductive metal...an N-th conductive metal.

[0028] In some embodiments of the present application, one end of the conductor is fixedly connected to the bottom wall of the mold; the density of the first conductive metal, the second conductive metal, and the Nth conductive metal in the longitudinal section of the mold is 10 2 Pieces / cm 2 ~10 5 Pieces / cm 2 ;or

[0029] The two ends of the conductor are fixedly connected to the side wall of the mold; the density of the first conductive metal, the second conductive metal, and the Nth conductive metal in the cross section of the mold is 10 2 Pieces / cm 2 ~10 5 Pieces / cm 2 .

[0030] In some embodiments of the present application, the mold has an injection port, and the injection port is arranged on the top wall and / or side wall of the mold near the top wall.

[0031] In some embodiments of the present application, the preparation device further includes a ventilation cooling pipe for introducing cooling gas or cooling liquid, and the ventilation cooling pipe is connected to the bottom wall and / or side wall of the mold.

[0032] Correspondingly, an embodiment of the present application further provides a composite conductor, which is prepared by the above-mentioned preparation method or the above-mentioned preparation device.

[0033] In some embodiments of the present application, the composite conductor includes a first metal layer, a first graphene deposition layer, a second metal layer, a second graphene deposition layer, ... an Nth metal layer, and an Nth graphene deposition layer which are stacked, and the first metal layer, the second metal layer, ... the Nth metal layer are respectively obtained by cooling the metal melt poured for the first time, the second time, ... the Nth time;

[0034] The composite conductor also includes a conductor interspersed in the first metal layer, the first graphene deposition layer, the second metal layer, the second graphene deposition layer...the Nth metal layer, the Nth graphene deposition layer along a direction perpendicular to the stacking direction, and the first graphene coating layer, the second graphene coating layer...the Nth graphene coating layer in the conductor are interconnected with the first graphene deposition layer, the second graphene deposition layer...the Nth graphene deposition layer to form a continuous graphene structure.

[0035] In some embodiments of the present application, the composite conductor includes a first metal layer, a first graphene deposition layer, a second metal layer, a second graphene deposition layer, ... an Nth metal layer, and an Nth graphene deposition layer which are stacked, and the first metal layer, the second metal layer, ... the Nth metal layer are respectively obtained by cooling the metal melt poured for the first time, the second time, ... the Nth time;

[0036] The composite conductor also includes a conductor interspersed in the first metal layer, the second metal layer,...the Nth metal layer along a direction parallel to the stacking direction, one or more of the first graphene coating layer, the second graphene coating layer...the Nth graphene coating layer in the conductor, and one or more of the first graphene deposition layer, the second graphene deposition layer...the Nth graphene deposition layer interspersed.

[0037] The present application provides a method for preparing a composite conductor, wherein the conductor includes a conductive metal and a graphene coating layer, a metal melt is poured on the surface of the conductor, and a graphene deposition layer is prepared to obtain a composite conductor. The provision of the graphene deposition layer and the graphene coating layer can improve the continuity of graphene in the composite conductor, increase the content of graphene in the composite conductor, promote the uniform distribution of graphene in the composite conductor, and facilitate the full play of the role of graphene in improving the performance of the composite conductor, improve the electrical conductivity and thermal conductivity of the composite conductor, and adopt the method of pouring metal melt to reduce the damage to the uniform, orderly and continuously distributed structure of graphene by subsequent extrusion and other processes, and the preparation method has low production cost, simple processing operation, is applicable to conductive metals of various shapes, and can be widely promoted and applied. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0039] Figure 1 is a flow chart of a method for preparing a composite conductor provided in an embodiment of the present application;

[0040] Figure 2 It is a schematic diagram of a mold of a device for preparing a composite conductor provided in an embodiment of the present application;

[0041] Figure 3 It is a schematic diagram of a mold of another composite conductor preparation device provided in an embodiment of the present application;

[0042] Figure 4 It is a schematic diagram of a mold of another composite conductor preparation device provided in an embodiment of the present application;

[0043] Figure 5 is a schematic diagram of the cross-sectional structure of the composite conductor provided in an embodiment of the present application without the metal layer;

[0044] Figure 6 It is a schematic diagram of the three-dimensional structure of the composite conductor provided in the embodiment of the present application without the metal layer.

[0045] Reference numerals:

[0046] 10 - mold; 20 - liquid injection port; 30 - conductor; 40 - graphene coating layer; 50 - graphene deposition layer. DETAILED DESCRIPTION

[0047] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0048] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0049] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0050] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0051] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0052] The technical solution of this application is as follows:

[0053] First, as Figure 1 As shown, the present embodiment provides a method for preparing a composite conductor, comprising:

[0054] S11. Provide a conductor 30, the conductor 30 includes a conductive metal and a graphene coating layer 40 bonded to the surface of the conductive metal; the conductive metal includes a first conductive metal, a second conductive metal...an N-th conductive metal arranged along a first direction, N is an integer ≥2; the graphene coating layer 40 includes a first graphene coating layer, a second graphene coating layer...an N-th graphene coating layer respectively corresponding to coating the first conductive metal, the second conductive metal...an N-th conductive metal.

[0055] In some embodiments, the conductive metal may be in the form of a tube, a rod, a ribbon, a sheet, or a wire.

[0056] In some embodiments, the conductive metal may be made of one or more of copper, silver, copper alloy, and silver alloy.

[0057] In some embodiments, the number of layers of the first graphene coating layer, the second graphene coating layer, and the Nth graphene coating layer is 1 to 10 layers, for example, 4 to 7 layers, 5 to 6 layers, etc. Further, the thickness of the single-layer graphene can be 0.334 nm. In other words, the thickness of the first graphene coating layer, the second graphene coating layer, and the Nth graphene coating layer can be 0.334 nm to 3.34 nm, respectively.

[0058] In some embodiments, the graphene coating layer 40 is deposited on the surface of the conductive metal by vapor deposition.

[0059] In some embodiments, providing the conductor 30 includes: providing a conductive metal, introducing a first carrier gas and a first carbon source gas into the surface of the conductive metal, allowing the conductive metal to react with the first carbon source gas, and growing a graphene coating layer 40 on the surface of the conductive metal to obtain the conductor 30.

[0060] In some embodiments, the diameters of the first conductive metal, the second conductive metal, ... the Nth conductive metal are respectively 0.003 mm to 0.2 mm, for example, 0.005 mm to 0.18 mm, 0.008 mm to 0.16 mm, 0.01 mm to 0.15 mm, 0.05 mm to 0.12 mm, 0.08 mm to 0.1 mm, etc.

[0061] In some embodiments, the first carrier gas includes one or more of hydrogen, argon, helium, neon, krypton, xenon, radon, and nitrogen. It is understood that the introduction of the first carrier gas can prevent the first carbon source gas from reacting with oxygen in the air to generate carbon dioxide and water, and can also prevent the conductive metal from oxidizing with oxygen.

[0062] In some embodiments, the volume flow rate of the first carrier gas is 1 sccm to 1000 sccm, for example, 50 sccm to 900 sccm, 100 sccm to 800 sccm, 200 sccm to 700 sccm, 300 sccm to 600 sccm, 400 sccm to 500 sccm, etc.

[0063] In some embodiments, the first carbon source gas includes one or more of methane, ethane, ethylene, and acetylene.

[0064] In some embodiments, the volume flow rate of the first carbon source gas is 1 sccm to 50 sccm, for example, 5 sccm to 45 sccm, 10 sccm to 40 sccm, 15 sccm to 35 sccm, 20 sccm to 30 sccm, 25 sccm to 28 sccm, etc.

[0065] In some embodiments, the temperature of the reaction between the conductive metal and the first carbon source gas is 1000°C to 1060°C, for example, 1005°C to 1055°C, 1010°C to 1050°C, 1015°C to 1045°C, 1020°C to 1040°C, 1025°C to 1030°C, etc.; the reaction time is 30min to 90min, for example, 35min to 85min, 40min to 80min, 45min to 75min, 50min to 70min, 55min to 65min, etc. In this way, it is beneficial to fully deposit the graphene coating layer 40 on the surface of the conductive metal.

[0066] In some embodiments, before the first carrier gas and the first carbon source gas are introduced, the method for preparing the conductor 30 further includes winding the conductive metal into a spiral shape, and then introducing the first carrier gas and the first carbon source gas.

[0067] It can be understood that the winding density of the conductive metal and the inner diameter of the spiral structure can be adjusted accordingly as needed to increase the deposition amount of the graphene coating layer 40 .

[0068] In some embodiments, the diameter of the conductor 30 is 0.02 mm to 0.2 mm.

[0069] In some embodiments, the method for preparing the composite conductor further comprises:

[0070] S12. Pour a molten metal on the conductor 30. The molten metal connects the first conductive metal, the second conductive metal, ... the Nth conductive metal to form one or more of the first conductive layers.

[0071] It should be noted that the first conductive metal, the second conductive metal, . . . the Nth conductive metal have a certain orientation. When the molten metal is poured on the surface of the conductor 30, the first conductive metal, the second conductive metal, . . . the Nth conductive metal extend in the same direction.

[0072] In some embodiments, before pouring the molten metal, the temperature of the conductor 30 may be 300° C. to 600° C., for example, 320° C. to 580° C., 350° C. to 550° C., 380° C. to 520° C., 400° C. to 500° C., 420° C. to 470° C., etc. In this way, the stability of the conductive metal and the graphene coating layer 40 can be ensured.

[0073] In some embodiments, the first conductive metal, the second conductive metal, ... the Nth conductive metal are arranged adjacent to each other along the first direction, and together with the corresponding first graphene coating layer, the second graphene coating layer, ... the Nth graphene coating layer, form a bundle conductor 30. Further, in some embodiments, the outer diameter of the bundle conductor 30 is 1 mm to 20 mm, for example, 2 mm to 18 mm, 3 mm to 17 mm, 4 mm to 16 mm, 5 mm to 15 mm, 8 mm to 10 mm, etc.

[0074] In other embodiments, the first conductive metal, the second conductive metal...the Nth conductive metal are arranged in parallel and at intervals along the first direction, and together with the corresponding first graphene coating layer, the second graphene coating layer...the Nth graphene coating layer form an array conductor 30.

[0075] In some embodiments, the metal melt is one or more of a copper melt, a copper alloy melt, a silver melt, and a silver alloy melt. It should be noted that the metal of the metal melt is consistent with the metal of the conductive metal.

[0076] In some embodiments, the thickness of the composite conductor is 0.02 mm to 20 mm, for example, 6 mm to 18 mm, 7 mm to 17 mm, 8 mm to 16 mm, 10 mm to 15 mm, 12 mm to 14 mm, etc.

[0077] In some embodiments, the temperature of the molten metal is 1200°C to 1300°C, for example, 1210°C to 1280°C, 1220°C to 1270°C, 1230°C to 1260°C, 1240°C to 1250°C, etc.

[0078] In some embodiments, a direction of pouring the molten metal onto the conductor 30 is parallel to the first direction.

[0079] In some other embodiments, the direction of pouring the molten metal into the conductor 30 is perpendicular to the first direction.

[0080] It can be understood that the direction perpendicular to the first direction is the extension direction of the conductor 30, and the surface of the conductive metal contains a graphene coating layer 40. By pouring the metal melt along the extension direction of the conductor 30 and preparing the graphene deposition layer 50 again, the graphene coating layer 40 intersects with the graphene deposition layer 50, which is conducive to the formation of continuous graphene and the uniform distribution of graphene in the composite conductor, thereby increasing the content of graphene and improving the conductivity of the composite conductor.

[0081] In some embodiments, the process of pouring the conductor 30 also includes a first cooling process.

[0082] In some embodiments, the first temperature reduction includes introducing a first cooling gas.

[0083] In some embodiments, the first cooling gas includes one or more of nitrogen, helium, neon, argon, krypton, xenon, and radon.

[0084] In some embodiments, the temperature of the first cooling gas is 900° C. to 1000° C., for example, 910° C. to 990° C., 920° C. to 980° C., 930° C. to 970° C., 940° C. to 960° C., 950° C. to 955° C., etc. The volume flow rate of the first cooling gas is 300 sccm to 400 sccm, for example, 300 sccm to 400 sccm, 310 sccm to 390 sccm, 320 sccm to 380 sccm, 330 sccm to 370 sccm, 340 sccm to 360 sccm, 350 sccm to 355 sccm, etc. The time for passing the first cooling gas is 20s to 80s, for example, 25s to 75s, 30s to 70s, 35s to 65s, 40s to 60s, 50s to 55s, etc. In this way, it is possible to prevent the temperature of the metal melt from being too high and damaging the uniform, orderly, continuous and stable structure of the graphene coating layer 40 in the conductor 30 .

[0085] In some embodiments, the first cooling includes placing in a cooling liquid. The cooling liquid may be water.

[0086] S13, preparing a first graphene deposition layer on the surface of the first conductive layer to form a first conductor 30, thereby obtaining a composite conductor.

[0087] The preparation method of the composite conductor provided in the present application, the conductor 30 includes a conductive metal and a graphene coating layer 40, a metal melt is poured in a parallel arrangement direction perpendicular to the conductive metal, and a graphene deposition layer 50 is prepared to obtain a composite conductor. The graphene deposition layer 50 is connected to the graphene coating layer 40, which can improve the continuity of graphene in the composite conductor, increase the content of graphene in the composite conductor, promote the uniform distribution of graphene in the composite conductor, and help the graphene to fully play the role of improving the performance of the composite conductor, improve the electrical conductivity and thermal conductivity of the composite conductor, and adopt the method of pouring metal melt, which can reduce the damage of the subsequent extrusion process to the uniform, orderly and continuous distribution structure of graphene, and the preparation method has low production cost, simple processing operation, is applicable to conductive metals of various shapes, and can be widely promoted and applied.

[0088] In some embodiments, preparing the first graphene deposition layer includes: introducing a second carrier gas and a second carbon source gas into a surface of the first conductive layer to grow the first graphene deposition layer.

[0089] In some embodiments, the second carrier gas includes one or more of hydrogen, argon, helium, neon, krypton, xenon, radon, and nitrogen.

[0090] In some embodiments, the volume flow rate of the second carrier gas is 200 sccm to 1000 sccm, for example, 250 sccm to 850 sccm, 300 sccm to 800 sccm, 350 sccm to 750 sccm, 400 sccm to 700 sccm, 500 sccm to 600 sccm, etc.

[0091] In some embodiments, the second carbon source gas includes one or more of methane, ethane, ethylene, and acetylene.

[0092] In some embodiments, the volume flow rate of the second carbon source gas is 20 sccm to 50 sccm, for example, 26 sccm to 48 sccm, 28 sccm to 46 sccm, 30 sccm to 45 sccm, 32 sccm to 42 sccm, 35 sccm to 40 sccm, etc.

[0093] In some embodiments, the temperature of the second carrier gas and the second carbon source gas is 1000°C to 1080°C, for example, 1005°C to 1075°C, 1010°C to 1070°C, 1020°C to 1060°C, 1030°C to 1050°C, 1040°C to 1045°C, etc.

[0094] In some embodiments, the time for introducing the second carrier gas and the second carbon source gas is 3 min to 10 min, for example, 4 min to 9 min, 5 min to 8 min, 6 min to 7 min, etc.

[0095] It can be understood that the temperature range, volume range and introduction time range of the second carrier gas and the second carbon source gas provided are conducive to the formation of large-lattice, uniformly ordered second graphene on the surface of the first conductive layer.

[0096] In some embodiments, the number of layers of the first graphene deposition layer is 1 to 10 layers, for example, 4 to 7 layers, 5 to 6 layers, etc. Further, the thickness of a single layer of graphene can be 0.334 nm. In other words, the thickness of the second graphene can be 0.334 nm to 3.34 nm.

[0097] In some embodiments, after preparing the first graphene deposition layer, the first conductor 30 is further subjected to a second cooling process to obtain a composite conductor.

[0098] In some embodiments, the second temperature reduction includes introducing a second cooling gas.

[0099] In some embodiments, the second cooling gas includes one or more of nitrogen, helium, neon, argon, krypton, xenon, and radon.

[0100] In some embodiments, the temperature of the second cooling gas is 500° C. to 600° C., for example, 510° C. to 590° C., 520° C. to 580° C., 530° C. to 570° C., 540° C. to 560° C., 550° C. to 555° C., etc. The time for passing the second cooling gas is 10s to 30s, for example, 12s to 28s, 15s to 26s, 16s to 25s, 18s to 24s, 20s to 22s, etc.

[0101] In some embodiments, the second cooling includes placing in a cooling liquid. The cooling liquid may be water.

[0102] In some embodiments, after forming the first conductive layer and the first conductor 30, the process further includes pouring molten metal on the first conductor 30, the molten metal connects one or more of the first conductive metal, the second conductive metal...the Nth conductive metal to form a second conductive layer, preparing a second graphene deposition layer on the surface of the second conductive layer to form a second conductor 30...pouring molten metal on the N-1th conductor 30 to form an Nth conductive layer, preparing an Nth graphene deposition layer on the surface of the Nth conductive layer to form an Nth conductor 30, the composite conductor includes the first conductor 30, the second conductor 30...the Nth conductor 30, wherein N is an integer ≥2.

[0103] It can be understood that the first graphene deposition layer, the second graphene deposition layer...the Nth graphene deposition layer constitute the graphene deposition layer 50.

[0104] In some embodiments, one or more of the first graphene coating layer, the second graphene coating layer, ... the Nth graphene coating layer is connected to one or more of the first graphene deposition layer, the second graphene deposition layer, ... the Nth graphene deposition layer.

[0105] In some embodiments, the thickness of the first conductive layer, the second conductive layer, ... the Nth conductive layer are respectively 0.01 mm to 0.2 mm, for example, 0.02 mm to 0.14 mm, 0.03 mm to 0.13 mm, 0.04 mm to 0.12 mm, 0.05 mm to 0.1 mm, 0.06 mm to 0.08 mm, etc.

[0106] In some embodiments, the number of layers of the first graphene deposition layer, the second graphene deposition layer, ... the Nth graphene deposition layer is 1 to 10 layers respectively.

[0107] It should be noted that the above steps are repeated on the surface of the first conductor 30 to form the second conductor 30, the third conductor 30, etc. It can be understood that after the first conductor 30 is formed, before the metal melt is poured on the surface of the first conductor 30, the first conductor 30 is subjected to a second cooling, which can avoid the first poured metal melt from melting when pouring the second metal melt. If the first poured metal melts, it is easy to cause the first graphene deposition layer to agglomerate, thereby failing to effectively improve the electrical conductivity and thermal conductivity of the conductive metal. By cooling and pouring the metal melt multiple times and growing graphene, a three-dimensional continuous and interconnected graphene structure can be formed, which promotes the use of the beneficial properties of graphene.

[0108] The solution provided in this application prepares a composite conductor by pouring a metal melt on the surface of the conductor 30. By controlling the pouring amount and temperature of the metal melt, graphene is grown layer by layer on the surface of the metal melt, thereby achieving uniform mixing of the metal melt and the graphene. This can not only avoid the agglomeration of graphene and achieve uniform and orderly distribution of graphene in the metal melt, but also control the amount of graphene added. Repeatedly pouring the metal melt and depositing and growing graphene can obtain a composite conductor with high conductivity.

[0109] Second, see Figures 2 to 4The embodiment of the present application also provides a device for preparing a composite conductor, including: a mold 10, the mold 10 contains a conductor 30, the conductor 30 includes a conductive metal and a graphene coating layer 40 bonded to the surface of the conductive metal; the conductive metal includes a first conductive metal, a second conductive metal...Nth conductive metal, N is an integer ≥2, and the first conductive metal, the second conductive metal...Nth conductive metal are arranged along a first direction; the graphene coating layer 40 includes a first graphene coating layer, a second graphene coating layer...Nth graphene coating layer respectively corresponding to the first conductive metal, the second conductive metal...Nth conductive metal.

[0110] In some embodiments, the mold 10 is in the shape of a cube or a cylinder. In other embodiments, the mold 10 can also be a polyhedron with other three-dimensional structures.

[0111] In some embodiments, the material of the mold 10 is one or more of graphite and quartz.

[0112] In some embodiments, the mold 10 has a liquid injection port 20 for pouring the molten metal. It is understood that the liquid injection port 20 is arranged on the top wall or the side wall of the mold 10 near the top wall.

[0113] In some embodiments, one end of the conductor 30 is fixedly connected to the bottom wall of the mold 10. In this way, the problem of uneven distribution of graphene caused by displacement of the conductor 30 after the metal melt is injected can be avoided.

[0114] Furthermore, the density of the first conductive metal, the second conductive metal, and the Nth conductive metal in the longitudinal section of the mold 10 is 10 2 Pieces / cm 2 ~10 5 Pieces / cm 2 , for example, it can be 10 3 Pieces / cm 2 , 10 4 Pieces / cm 2 wait.

[0115] In some other embodiments, two ends of the conductor 30 are fixedly connected to the side walls of the mold 10 .

[0116] Furthermore, the density of the first conductive metal, the second conductive metal, ... the Nth conductive metal in the cross section of the mold 10 is 10 2 Pieces / cm 2 ~10 5 Pieces / cm 2 , for example, it can be 10 3 Pieces / cm 2 , 10 4 Pieces / cm 2 wait.

[0117] In some embodiments, the preparation device further includes a ventilation cooling pipe for introducing cooling gas or cooling liquid, and the ventilation cooling pipe is connected to the bottom wall and / or side wall of the mold 10 .

[0118] It can be understood that when the composite conductor is prepared using the preparation device provided by the present application, the molten metal can be poured multiple times until the mold 10 is full.

[0119] Third, see Figures 5 and 6 The embodiment of the present application also provides a composite conductor, which is prepared by the above-mentioned preparation method or prepared by the above-mentioned preparation device.

[0120] It should be noted that Figure 6 The graphene deposition layer 50 in the figure is solid. In order to facilitate understanding of the relationship between it and the graphene coating layer 40, only the edge line is drawn. The graphene coating layer 40 is interspersed in the graphene deposition layer 50, and the graphene coating layer 40 and the graphene deposition layer 50 form a continuous graphene structure.

[0121] In some embodiments, the composite conductor includes a first metal layer, a first graphene deposition layer, a second metal layer, a second graphene deposition layer, ... an Nth metal layer, and an Nth graphene deposition layer that are stacked, and the first metal layer, the second metal layer, ... the Nth metal layer are respectively obtained by cooling the metal melt poured for the first time, the second time, ... the Nth time;

[0122] The composite conductor also includes a conductor 30 interspersed in the first metal layer, the first graphene deposition layer, the second metal layer, the second graphene deposition layer...the Nth metal layer, the Nth graphene deposition layer along a direction perpendicular to the stacking direction, and the first graphene coating layer, the second graphene coating layer...the Nth graphene coating layer in the conductor 30 are interconnected with the first graphene deposition layer, the second graphene deposition layer...the Nth graphene deposition layer to form a continuous graphene structure.

[0123] In some other embodiments, the composite conductor includes a first metal layer, a first graphene deposition layer, a second metal layer, a second graphene deposition layer, ... an Nth metal layer, and an Nth graphene deposition layer which are stacked, and the first metal layer, the second metal layer, ... the Nth metal layer are respectively obtained by cooling the metal melt poured for the first time, the second time, ... the Nth time;

[0124] The composite conductor also includes a conductor 30 interspersed in the first metal layer, the second metal layer,...the Nth metal layer along a direction parallel to the stacking direction, and one or more of the first graphene coating layer, the second graphene coating layer,...the Nth graphene coating layer in the conductor 30 are interspersed in one or more of the first graphene deposition layer, the second graphene deposition layer,...the Nth graphene deposition layer.

[0125] It can be understood that the first graphene coating layer, the second graphene coating layer...the Nth graphene coating layer constitute a graphene coating layer 40, and the first graphene deposition layer, the second graphene deposition layer...the Nth graphene deposition layer constitute a graphene deposition layer 50.

[0126] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0127] Example 1

[0128] This embodiment provides a composite conductor, and the preparation method thereof is as follows:

[0129] A copper wire with a diameter of 0.1 mm is provided, the copper wire is wound onto a quartz rod, 200 sccm of argon, 300 sccm of hydrogen and 30 sccm of methane are introduced, and the control time is 40 minutes, and a graphene coating layer is grown on the surface of the copper wire, the number of layers of the graphene coating layer is 6, and a copper conductor is obtained;

[0130] A cubic mold is provided, wherein a liquid injection port is provided on the top of the cubic mold, and ventilation cooling pipes are provided on the bottom and side walls, and the temperature of the cubic mold is 400° C. 2000 copper conductors are arranged closely to obtain a bundled copper conductor with an outer diameter of 5 mm, and the bundled copper conductor is placed in the cubic mold along the height direction of the cubic mold, and one end of the bundled copper conductor is fixed on the bottom wall of the cubic mold;

[0131] Inject molten copper into the cubic mold, control the depth of the copper liquid to be 20 μm, and obtain a first conductive layer. When injecting the copper liquid, simultaneously introduce 900° C. helium from the bottom and sidewall ventilation cooling pipes of the cubic mold, the volume flow rate of the helium is 350 sccm, and the time of introducing the helium is 40 s; then introduce 400 sccm of argon, 200 sccm of hydrogen and 30 sccm of methane on the surface of the first conductive layer, the temperature of the argon, hydrogen and methane is 1050° C., grow a first graphene deposition layer on the surface of the first conductive layer, the number of layers of the first graphene deposition layer is 5, and stop after 3 minutes; introduce 550° C. nitrogen from the bottom and sidewall ventilation cooling pipes of the mold again, and the time of introducing the nitrogen is 20 s;

[0132] The above steps are repeated several times until the cubic mold is filled with copper liquid. After cooling, a composite conductor is obtained.

[0133] Example 2

[0134] This embodiment provides a composite conductor, and the preparation method thereof is as follows:

[0135] A copper wire with a diameter of 0.1 mm is provided, the copper wire is wound onto a quartz rod, 200 sccm of argon, 300 sccm of hydrogen and 30 sccm of methane are introduced, and the control time is 40 minutes, and a graphene coating layer is grown on the surface of the copper wire, the number of layers of the graphene coating layer is 3 layers, and a copper conductor is obtained;

[0136] A cylindrical mold is provided, the cylindrical mold is placed vertically along its axial direction, a liquid injection port is provided on the top, ventilation cooling pipes are provided on the bottom and side walls, and the temperature of the cylindrical mold is 400° C. 2000 copper conductors are arranged closely to obtain a bundled copper conductor with an outer diameter of 5 mm, and the bundled copper conductor is placed in the cylindrical mold along the axial direction of the cylindrical mold, and one end of the bundled copper conductor is fixed on the bottom wall of the cylindrical mold;

[0137] Inject molten copper into the cylindrical mold, control the depth of the copper liquid to be 100 μm, and obtain a first conductive layer. When injecting the copper liquid, simultaneously introduce 900° C. helium from the bottom and sidewall ventilation cooling pipes of the cubic mold, the volume flow rate of the helium is 350 sccm, and the time of introducing the helium is 40 s; then introduce 100 sccm of argon, 200 sccm of hydrogen and 30 sccm of methane on the surface of the first conductive layer, the temperature of the argon, hydrogen and methane is 1050° C., grow a first graphene deposition layer on the surface of the first conductive layer, the number of layers of the first graphene deposition layer is 8, and stop after 3 minutes; introduce 550° C. argon from the bottom and sidewall ventilation cooling pipes of the mold again, and the time of introducing the argon is 20 s;

[0138] The above steps are repeated several times until the cylindrical mold is filled with copper liquid. After cooling, a composite conductor is obtained.

[0139] Example 3

[0140] This embodiment provides a composite conductor, and the preparation method thereof is as follows:

[0141] A copper tube with a diameter of 0.1 mm is provided, 200 sccm of argon, 300 sccm of hydrogen and 30 sccm of methane are introduced into the surface of the copper wire for a control time of 40 minutes, a graphene coating layer is grown on the surface of the copper tube, the number of layers of the graphene coating layer is 5, and a copper conductor is obtained;

[0142] A cubic mold is provided, wherein a liquid injection port is provided on the top of the cubic mold, and ventilation cooling pipes are provided on the bottom and side walls, and the temperature of the cubic mold is 400° C. 500 copper conductors are evenly spaced by using a jack template to obtain an array conductor, and the array conductor is placed in the cubic mold along the height direction of the cubic mold, and one end of the array conductor is fixed on the bottom wall of the cubic mold;

[0143] Inject molten copper into the cubic mold, control the depth of the copper liquid to be 150 μm, and obtain a first conductive layer. When injecting the copper liquid, simultaneously introduce 950° C. helium from the bottom and sidewall ventilation cooling pipes of the cubic mold, the volume flow rate of the helium is 350 sccm, and the time of introducing the helium is 40 s; then introduce 400 sccm of argon, 200 sccm of hydrogen and 30 sccm of methane on the surface of the first conductive layer, the temperature of the argon, hydrogen and methane is 1080° C., grow a first graphene deposition layer on the surface of the first conductive layer, the number of layers of the first graphene deposition layer is 7, and stop after 5 minutes; again introduce 600° C. helium from the bottom and sidewall ventilation cooling pipes of the mold, and the time of introducing nitrogen is 30 s;

[0144] The above steps are repeated several times until the cubic mold is filled with copper liquid. After cooling, a composite conductor is obtained.

[0145] Example 4

[0146] This embodiment provides a composite conductor, and the preparation method thereof is as follows:

[0147] A copper-silver alloy wire with a diameter of 0.2 mm is provided, the copper-silver alloy wire is wound onto a quartz rod, 200 sccm of argon, 300 sccm of hydrogen and 30 sccm of ethylene are introduced for a control time of 90 minutes, a graphene coating layer is grown on the surface of the copper-silver alloy wire, the number of layers of the graphene coating layer is 3, and a copper-silver alloy conductor is obtained;

[0148] A cubic mold is provided, wherein a liquid injection port is provided at the middle upper part of the side wall of the cubic mold, and ventilation cooling pipes are provided at the bottom and the side wall, and the temperature of the cubic mold is 400° C. 2000 copper-silver alloy conductors are arranged closely to obtain a bundle of copper-silver alloy conductors with an outer diameter of 2 mm, and the bundle of copper-silver alloy conductors is placed in the cubic mold along the height direction of the cubic mold, and one end of the bundle of copper-silver alloy conductors is fixed to the bottom wall of the cubic mold;

[0149] Inject molten copper-silver alloy liquid into the cubic mold, control the depth of the copper-silver alloy liquid to be 20 μm, and obtain a first conductive layer. When injecting the copper liquid, simultaneously introduce 900° C. helium from the ventilation cooling pipes on the bottom and side walls of the cubic mold, the volume flow rate of the helium is 350 sccm, and the time for introducing the helium is 40 s; then introduce 100 sccm of argon, 500 sccm of hydrogen and 20 sccm of methane on the surface of the first conductive layer, the temperature of the argon, hydrogen and methane is 1000° C., grow a first graphene deposition layer on the surface of the first conductive layer, the number of layers of the first graphene deposition layer is 5, and stop after 4 minutes; again introduce 550° C. nitrogen from the ventilation cooling pipes on the bottom and side walls of the mold, and the time for introducing the nitrogen is 22 s;

[0150] The above steps are repeated several times until the cubic mold is filled with copper-silver alloy liquid, and after cooling, a composite conductor is obtained.

[0151] Example 5

[0152] This embodiment provides a composite conductor, and the preparation method thereof is as follows:

[0153] A silver ribbon with a diameter of 0.1 mm is provided, the silver ribbon is wound onto a quartz rod, 200 sccm of argon, 300 sccm of hydrogen and 30 sccm of methane are introduced, and the control time is 40 minutes, and a graphene coating layer is grown on the surface of the silver ribbon, the number of layers of the graphene coating layer is 6, and a silver conductor is obtained;

[0154] A cubic mold is provided, wherein a liquid injection port is provided on the top of the cubic mold, and ventilation cooling pipes are provided on the bottom and side walls, and the temperature of the cubic mold is 4600° C. 2000 silver conductors are arranged closely to obtain a bundle of silver conductors with an outer diameter of 5 mm, and the bundle of silver conductors is placed in the cubic mold along the height direction of the cubic mold, and one end of the bundle of silver conductors is fixed on the bottom wall of the cubic mold;

[0155] Inject molten silver liquid into the cubic mold, control the depth of the silver liquid to be 110 μm, obtain a first conductive layer, and simultaneously introduce 900° C. helium from the bottom and sidewall ventilation cooling pipes of the cubic mold when injecting copper liquid, the volume flow rate of the helium is 360 sccm, and the time of introducing the helium is 40 s; then introduce 400 sccm of argon, 200 sccm of hydrogen and 30 sccm of methane on the surface of the first conductive layer, the temperature of the argon, hydrogen and methane is 1050° C., grow a first graphene deposition layer on the surface of the first conductive layer, the number of layers of the first graphene deposition layer is 5, and stop after 3 minutes; introduce 550° C. nitrogen from the bottom and sidewall ventilation cooling pipes of the mold again, and the time of introducing the nitrogen is 20 s;

[0156] The above steps are repeated several times until the cubic mold is filled with silver liquid. After cooling, a composite conductor is obtained.

[0157] Example 6

[0158] This embodiment provides a composite conductor, and the preparation method thereof is as follows:

[0159] A silver wire with a diameter of 0.1 mm is provided, the silver wire is wound onto a quartz rod, the quartz rod is taken out, two ends of the spiral silver wire are fixed on a rack, 200 sccm of argon, 300 sccm of nitrogen and 30 sccm of acetylene are introduced, and the control time is 40 minutes, and a graphene coating layer is grown on the surface of the silver wire, the number of layers of the graphene coating layer is 6, and a silver conductor is obtained;

[0160] A cubic mold is provided, wherein a liquid injection port is provided on the top of the cubic mold, and ventilation cooling pipes are provided on the bottom and side walls, and the temperature of the cubic mold is 600° C. 2000 silver conductors are arranged closely to obtain a bundle of silver conductors with an outer diameter of 5 mm, and the bundle of silver conductors is placed in the cubic mold along the height direction of the cubic mold, and one end of the bundle of silver conductors is fixed on the bottom wall of the cubic mold;

[0161] Inject molten silver liquid into the cubic mold, control the depth of the silver liquid to be 20 μm, obtain a first conductive layer, while injecting the silver liquid, introduce 900° C. helium from the bottom and sidewall ventilation cooling pipes of the cubic mold, the volume flow rate of the helium is 350 sccm, and the time of introducing the helium is 40 s; then introduce 400 sccm of argon, 200 sccm of hydrogen and 30 sccm of methane on the surface of the first conductive layer, the temperature of the argon, hydrogen and methane is 1050° C., grow a first graphene deposition layer on the surface of the first conductive layer, the number of layers of the first graphene deposition layer is 5, and stop after 3 minutes; introduce 550° C. nitrogen from the bottom and sidewall ventilation cooling pipes of the mold again, and the time of introducing the nitrogen is 20 s;

[0162] The above steps are repeated several times until the cubic mold is filled with silver liquid. After cooling, a composite conductor is obtained.

[0163] Comparative Example 1

[0164] This embodiment provides a composite conductor, and the preparation method thereof is as follows:

[0165] A cubic mold is provided, 15 μm copper liquid is injected, graphene is deposited on the surface of the copper liquid, 10 μm copper liquid is injected again, graphene is deposited on the surface of the copper liquid, and a composite conductor is obtained.

[0166] Comparative Example 2

[0167] This embodiment provides a composite conductor, and the preparation method thereof is as follows:

[0168] A molten copper solution is provided, and graphene is added and mixed to obtain a composite conductor.

[0169] Comparative Example 3

[0170] This embodiment provides a composite conductor, and the preparation method thereof is as follows:

[0171] A copper wire with a diameter of 0.2 mm is provided, 200 sccm of argon, 300 sccm of hydrogen and 30 sccm of ethylene are introduced into the surface of the copper wire for a controlled time of 65 minutes, graphene is grown on the surface of the copper wire, the number of graphene layers is 5, and a composite conductor is obtained.

[0172] Comparative Example 4

[0173] This embodiment provides a composite conductor, and the preparation method thereof is as follows:

[0174] A molten silver solution is provided, and graphene is added and mixed to obtain a composite conductor.

[0175] Comparative Example 5

[0176] This embodiment provides a composite conductor, and the preparation method thereof is as follows:

[0177] A silver wire with a diameter of 0.2 mm is provided, 200 sccm of argon, 300 sccm of hydrogen and 30 sccm of ethylene are introduced into the surface of the silver wire for a controlled time of 65 minutes, graphene is grown on the surface of the silver wire, the number of graphene layers is 5, and a composite conductor is obtained.

[0178] The thermal conductivity and electrical conductivity of the composite conductors of Examples 1 to 6 and Comparative Examples 1 to 3 were measured. The test method for electrical conductivity was based on T / CSTM00591-2022, and the test method for thermal conductivity was based on GB / T22588-2008. The results are shown in Table 1.

[0179] Table 1

[0180]

[0181]

[0182] It can be seen from Table 1 that whether it is copper, silver or copper-silver alloy, the electrical conductivity and thermal conductivity of the composite conductors in Examples 1 to 6 are significantly improved compared with the comparative example. This is because the molten metal is poured on the metal containing graphene and the graphene is grown again, which increases the content of graphene, promotes the continuous and uniform distribution of graphene, reduces the damage to the graphene structure caused by processes such as extrusion, and thus improves the electrical conductivity and thermal conductivity of the composite conductor.

[0183] The composite conductor and its preparation method and preparation device provided in the embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for preparing a composite conductor, characterized in that: include: A conductor is provided, the conductor comprising a conductive metal and a graphene coating layer bonded to a surface of the conductive metal; the conductive metal comprises a first conductive metal, a second conductive metal, ... an Nth conductive metal arranged along a first direction, wherein N is an integer ≥ 2; the graphene coating layer comprises a first graphene coating layer, a second graphene coating layer, ... an Nth graphene coating layer respectively corresponding to coating the first conductive metal, the second conductive metal, ... the Nth conductive metal; pouring a molten metal on the conductor, wherein the molten metal connects one or more of the first conductive metal, the second conductive metal, ... the Nth conductive metal to form a first conductive layer; A first graphene deposition layer is prepared on the surface of the first conductive layer to form a first conductor to obtain a composite conductor.

2. The preparation method according to claim 1, characterized in that The first conductive metal, the second conductive metal, and the Nth conductive metal are in the shape of a tube, a rod, a belt, a sheet, or a wire, and have an outer diameter or thickness of 0.003 mm to 0.2 mm, and are made of one or more of copper, silver, a copper alloy, and a silver alloy; The material of the metal melt is one or more of copper melt, copper alloy melt, silver melt, and silver alloy melt; the temperature is 1000° C. to 1300° C.; The number of layers of the first graphene coating layer, the second graphene coating layer, ... the Nth graphene coating layer are 1 to 10 layers respectively.

3. The preparation method according to claim 1, characterized in that: The direction of pouring the molten metal onto the conductor is parallel to the first direction, or perpendicular to the first direction.

4. The preparation method according to claim 1, characterized in that: After forming the first conductive layer and the first conductor, the method further includes pouring a molten metal on the first conductor, the molten metal connects one or more of the first conductive metal, the second conductive metal...the Nth conductive metal to form a second conductive layer, preparing a second graphene deposition layer on the surface of the second conductive layer to form a second conductor...pouring a molten metal on the N-1th conductor to form an Nth conductive layer, preparing an Nth graphene deposition layer on the surface of the Nth conductive layer to form an Nth conductor, the composite conductor includes the first conductor, the second conductor...the Nth conductor, wherein N is an integer ≥2.

5. The preparation method according to claim 4, characterized in that: One or more of the first graphene coating layer, the second graphene coating layer, ... the Nth graphene coating layer are connected to one or more of the first graphene deposition layer, the second graphene deposition layer, ... the Nth graphene deposition layer.

6. The preparation method according to claim 4, characterized in that: The thicknesses of the first conductive layer, the second conductive layer...the Nth conductive layer are respectively 0.01 mm to 0.2 mm; the number of layers of the first graphene deposition layer, the second graphene deposition layer...the Nth graphene deposition layer are respectively 1 to 10 layers.

7. The preparation method according to claim 1, characterized in that: The thickness of the composite conductor is 0.02 mm to 20 mm.

8. The preparation method according to claim 1, characterized in that: The first conductive metal, the second conductive metal...the Nth conductive metal are arranged closely along the first direction, and form a bundle conductor with the corresponding first graphene coating layer, the second graphene coating layer...the Nth graphene coating layer; the outer diameter of the bundle conductor is 1mm to 20mm.

9. The preparation method according to claim 1, characterized in that: The first conductive metal, the second conductive metal, ... the Nth conductive metal are arranged at intervals along the first direction, and form an array conductor with the corresponding first graphene coating layer, the second graphene coating layer, ... the Nth graphene coating layer.

10. The preparation method according to claim 1, characterized in that: The process of pouring the conductor also includes a first cooling process.

11. The preparation method according to claim 10, characterized in that: The first cooling comprises introducing a first cooling gas; the first cooling gas comprises one or more of nitrogen, helium, neon, argon, krypton, xenon, and radon; the temperature of the first cooling gas is 900° C. to 1000° C., and the volume flow rate is 300 sccm to 400 sccm; the time for introducing the first cooling gas is 20s to 80s; or The first cooling includes placing in a cooling liquid.

12. The preparation method according to claim 1, characterized in that: After preparing the first graphene deposition layer, the method further includes performing a second cooling process to obtain a composite conductor.

13. The preparation method according to claim 12, characterized in that: The second cooling includes introducing a second cooling gas; the second cooling gas includes one or more of nitrogen, helium, neon, argon, krypton, xenon, and radon; the temperature of the second cooling gas is 500° C. to 600° C.; the time for introducing the second cooling gas is 10s to 30s; or The second cooling includes placing in a cooling liquid.

14. A preparation device for a composite conductor, applied to the preparation method according to any one of claims 1 to 13, characterized in that: It comprises a mold, wherein the mold contains a conductor, wherein the conductor comprises a conductive metal and a graphene coating layer bonded to the surface of the conductive metal; the conductive metal comprises a first conductive metal, a second conductive metal...an Nth conductive metal, wherein N is an integer ≥ 2, and the first conductive metal, the second conductive metal...an Nth conductive metal are arranged along a first direction; and the graphene coating layer comprises a first graphene coating layer, a second graphene coating layer...an Nth graphene coating layer respectively coating the first conductive metal, the second conductive metal...an Nth conductive metal.

15. The preparation device according to claim 14, characterized in that: One end of the conductor is fixedly connected to the bottom wall of the mold; the density of the first conductive metal, the second conductive metal, and the Nth conductive metal in the longitudinal section of the mold is 10 2 Pieces / cm 2 ~10 5 Pieces / cm 2 ;or The two ends of the conductor are fixedly connected to the side wall of the mold; the density of the first conductive metal, the second conductive metal, and the Nth conductive metal in the cross section of the mold is 10 2 Pieces / cm 2 ~10 5 Pieces / cm 2 .

16. The preparation device according to claim 14, characterized in that: The mold has a liquid injection port, and the liquid injection port is arranged on the top wall and / or side wall of the mold near the top wall.

17. The preparation device according to claim 14, characterized in that: The preparation device also includes a ventilation cooling pipe for introducing cooling gas or cooling liquid, and the ventilation cooling pipe is connected to the bottom wall and / or side wall of the mold.

18. A composite conductor, characterized in that: The composite conductor is prepared by the preparation method according to any one of claims 1 to 13, or prepared by the preparation device according to any one of claims 14 to 17.

19. The composite conductor according to claim 18, wherein: The composite conductor comprises a first metal layer, a first graphene deposition layer, a second metal layer, a second graphene deposition layer, ... an Nth metal layer, and an Nth graphene deposition layer which are stacked, wherein the first metal layer, the second metal layer, ... the Nth metal layer are respectively obtained by cooling the metal melt poured for the first time, the second time, ... the Nth time; The composite conductor also includes a conductor interspersed in the first metal layer, the first graphene deposition layer, the second metal layer, the second graphene deposition layer...the Nth metal layer, the Nth graphene deposition layer along a direction perpendicular to the stacking direction, and the first graphene coating layer, the second graphene coating layer...the Nth graphene coating layer in the conductor are interconnected with the first graphene deposition layer, the second graphene deposition layer...the Nth graphene deposition layer to form a continuous graphene structure.

20. The composite conductor of claim 18, wherein: The composite conductor comprises a first metal layer, a first graphene deposition layer, a second metal layer, a second graphene deposition layer, ... an Nth metal layer, and an Nth graphene deposition layer which are stacked, wherein the first metal layer, the second metal layer, ... the Nth metal layer are respectively obtained by cooling the metal melt poured for the first time, the second time, ... the Nth time; The composite conductor also includes a conductor interspersed in the first metal layer, the second metal layer,...the Nth metal layer along a direction parallel to the stacking direction, and one or more of the first graphene coating layer, the second graphene coating layer...the Nth graphene coating layer in the conductor is interspersed in one or more of the first graphene deposition layer, the second graphene deposition layer...the Nth graphene deposition layer.

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