State determination method, substrate processing apparatus, and program

Abstract

The invention provides a state determination method, a substrate processing apparatus and a program, which can determine the shaking state of a substrate with high precision when the substrate is separated. A state determination method in a substrate processing apparatus includes: a step of capturing a moving image including a first state in which a substrate is held by electrostatic adsorption to a second state in which the electrostatic adsorption of the substrate is released and the substrate is raised by a lift pin after a destaticizing process; detecting the position of the corner of the substrate on the basis of a first image in a first state included in the moving image; tracking the position of the corner of the substrate on the basis of a plurality of images captured in time series after the first image; a step for calculating the amount of change in the height direction of the tracked position of the corner of the substrate; breaking the shaking degree of the substrate based on the variable quantity; and outputting a warning according to the determined degree of shake of the substrate.

Description

Technical Field

[0001] The present invention relates to a state judgment method, a substrate processing device and a program. Background Art

[0002] Patent document 1 discloses a measurement method for calculating the residual charge amount of a wafer before the wafer is detached from an electrostatic chuck. In the measurement method disclosed in Patent document 1, a substrate placed on a mounting table in a processing container is electrostatically adsorbed by an electrostatic chuck, and after processing is performed using plasma generated from a gas by applying high-frequency power, the substrate is vibrated by moving a pin supporting the substrate up and down, and the residual charge amount of the substrate is calculated based on the induced current of the adsorption electrode.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-107265 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a technology capable of accurately determining the shaking state of a substrate when the substrate is detached from an electrostatic chuck.

[0008] Technical solutions for solving technical problems

[0009] According to one aspect of the present invention, there is provided a state judgment method performed in a substrate processing device, the substrate processing device comprising: a processing container; a loading table, which loads the substrate in the processing container; an electrostatic suction cup, which is arranged on the loading table and electrostatically adsorbs the substrate; a lifting pin, which lifts and lowers the substrate relative to the loading table; and a photographing unit, which photographs the substrate, the state judgment method comprising: step (a), photographing a dynamic image, the dynamic image including a first state in which the substrate is held on the electrostatic suction cup due to electrostatic adsorption, to a state in which the electrostatic adsorption of the substrate is released and the substrate is subjected to a static elimination treatment; A second state in which the substrate is raised by means of lifting pins; a step (b) of detecting the position of the corner of the substrate based on a first image captured in the first state and included in the dynamic image; a step (c) of tracking the position of the corner of the substrate based on a plurality of images captured in a time series after the first image and included in the dynamic image; a step (d) of calculating the amount of change in the position of the tracked corner of the substrate in the height direction; a step (e) of determining the degree of shaking of the substrate based on the amount of change; and a step (f) of outputting a warning based on the determined degree of shaking of the substrate.

[0010] Effects of the Invention

[0011] According to one aspect, the shaking state of a substrate when the substrate is detached from an electrostatic chuck can be determined with high accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic cross-sectional view showing an example of a substrate processing apparatus according to one embodiment.

[0013] Figure 2 This is a block diagram showing an example of the hardware configuration of a control device according to one embodiment.

[0014] Figure 3 This is a block diagram showing an example of the functional configuration of a control device according to one embodiment.

[0015] Figure 4 This is a flowchart showing an example of a state determination method according to one embodiment.

[0016] Figure 5 This is a flowchart showing an example of a shake detection process according to one embodiment.

[0017] Figure 6 It is an explanatory diagram of detection of a substrate corner.

[0018] Figure 7 This is an explanatory diagram of the selection of the corner of the substrate.

[0019] Figure 8 This is an explanatory diagram of tracking the corner of a substrate.

[0020] Fig. 9 This is an explanatory diagram of the determination of shake detection.

[0021] Fig.10 This is a diagram showing the flow of substrate processing, static electricity removal processing, and cleaning processing in a substrate processing apparatus.

[0022] Description of Reference Numerals

[0023] G substrate

[0024] 10. Processing container

[0025] 12 Upper chamber

[0026] 13 Lower chamber

[0027] 25 Camera (shooting unit)

[0028] 30 sprinkler heads

[0029] 50 Gas exhaust section

[0030] 60 loading platform

[0031] 65 adsorption electrode

[0032] 66 Electrostatic chuck

[0033] 74 power supply line

[0034] 75 DC Power Supply

[0035] 78 lifting pin

[0036] 90 Control Device

[0037] 91 Shooting Control Unit

[0038] 92 dynamic image storage unit

[0039] 93 Shake detection unit

[0040] 931 Angle Detection Unit

[0041] 932 Angle Tracking Department

[0042] 933 Difference Calculation Department

[0043] 934 Judgment Department

[0044] 94 Output

[0045] 95 substrate processing department

[0046] 100 substrate processing devices. DETAILED DESCRIPTION

[0047] Hereinafter, the mode for carrying out the present invention will be described with reference to the accompanying drawings. In each of the drawings, the same components are denoted by the same reference numerals, and duplicate descriptions may be omitted.

[0048] In a substrate processing apparatus, a DC voltage is applied to an electrode of an electrostatic chuck to adsorb a substrate to the electrostatic chuck, and after the substrate is processed, a static elimination process is performed to generate a plasma for static elimination to remove residual charges when the substrate is detached from the electrostatic chuck. At this time, if static elimination is insufficient, when the substrate is lifted by the lifting pins, there is a possibility that the substrate may be cracked or insulation may be broken due to ESD (Electro Static Discharge).

[0049] In one example of a substrate shaking detection method, the side of a rectangular substrate is detected based on a dynamic image captured by a camera connected to a processing container. The side is approximated as a straight line, and the change in the height direction of the straight line near the corner of the substrate is calculated, thereby detecting the shaking of the substrate.

[0050] However, when the edge of the substrate is approximated as a straight line, the height of the point in the center of the straight line is used as a reference. Therefore, the substrate deflection will cause the substrate shaking to be estimated to be smaller, and the substrate shaking cannot be accurately detected due to the substrate deflection. In addition, the straight line formed by the substrate pattern may be erroneously detected, which has a negative impact on the analysis results.

[0051] One embodiment of the present invention proposes a technology that uses the corners of the substrate rather than the sides of the substrate as feature points for detecting the shaking of the substrate based on a dynamic image obtained by shooting a substrate in a processing container, and tracks the detected corners. The dynamic image includes at least: a state where the substrate is held on a stage (electrostatic suction cup) due to electrostatic adsorption, to a state where the electrostatic adsorption of the substrate is released and the substrate is raised by lift pins after a static elimination treatment using plasma. In this embodiment, the change in the position of the corner of the substrate determined according to the dynamic image in the height direction is extracted, and the degree of shaking of the substrate is judged based on the change. Then, a warning is output based on the judged degree of shaking of the substrate. In this way, the shaking state of the substrate when the substrate is detached from the stage (electrostatic suction cup) can be judged with high precision.

[0052] [Substrate processing device]

[0053] Figure 1 It is a cross-sectional schematic diagram showing an example of a substrate processing device of the present embodiment. The substrate processing device 100 is an inductively coupled plasma (ICP) processing device that performs various substrate processing methods on a substrate G (hereinafter referred to as "substrate") that is rectangular when viewed from above for FPD (Flat Panel Display). Glass is mainly used as the material of the substrate, and transparent synthetic resins are sometimes used depending on the application. Here, the substrate processing includes etching processing, film forming processing using CVD (Chemical Vapor Deposition) method, etc. As an FPD, a liquid crystal display (LCD) is given as an example. It can also be electroluminescence (EL), plasma display panel (PDP), etc. The substrate G includes a supporting substrate in addition to the form of a circuit pattern formed on its surface. In addition, the plane size of the substrate for FPD has been large-scaled with the passage of generations. The planar dimensions of the substrate G processed by the substrate processing apparatus 100 range from about 1500 mm×1800 mm for the sixth generation to about 3000 mm×3400 mm for the 10.5th generation. The thickness of the substrate G is about 0.2 mm to several mm.

[0054] The substrate processing apparatus 100 includes a rectangular parallelepiped box-shaped processing container 10, a mounting table 60 having a rectangular outer shape when viewed from above and disposed in the processing container 10 for mounting the substrate G, and a control device 90. The processing container 10 may also be in a cylindrical box shape or an elliptical cylindrical box shape, and in this form, the mounting table 60 is also circular or elliptical, and the substrate G mounted on the mounting table 60 is also circular.

[0055] The processing container 10 is divided into two spaces, upper and lower, by a dielectric plate 11. The upper space, i.e., the antenna room, is formed by an upper chamber 12, and the lower space, i.e., the processing chamber S, is formed by a lower chamber 13. The processing container 10 is formed of a metal such as aluminum, and the dielectric plate 11 is formed of ceramics such as alumina (Al2O3) or quartz.

[0056] In the processing container 10, a rectangular ring-shaped support frame 14 is provided at a position that is a boundary between the lower chamber 13 and the upper chamber 12 so as to protrude into the processing container 10, and a dielectric plate 11 is placed on the support frame 14. The processing container 10 is grounded via a grounding wire 13e.

[0057] A delivery port 13b for delivering the substrate G to and from the lower chamber 13 is provided on the side wall 13a of the lower chamber 13, and the delivery port 13b can be opened and closed by a gate 20. The lower chamber 13 is adjacent to a conveying chamber (not shown) having a conveying mechanism built therein, and the gate 20 is controlled to open and close, and the substrate G is delivered to and from the conveying mechanism through the delivery port 13b.

[0058] An observation port 13c made of a light-transmitting quartz or other member is provided on the side wall 13a of the lower chamber 13. A camera 25 as an example of a photographing unit is connected to the outside of the observation port 13c. The camera 25 is a digital camera capable of photographing dynamic images. The camera 25 is arranged to photograph the substrate G placed on the mounting table 60 from the side in a horizontal direction through the observation port 13c.

[0059] In the case where one camera 25 cannot take the entire substrate G into its viewing angle, multiple observation ports 13c and cameras 25 are provided so that any part of the entire substrate G is taken into the viewing angle of a certain camera 25. For example, two cameras 25 may be provided, the first camera 25 photographing the substrate G from a direction orthogonal to a first side surface of the substrate G, and the second camera 25 photographing the substrate G from a direction orthogonal to a second side surface adjacent to the first side surface. The recording format of the dynamic image taken by the camera 25 is not limited, and for example, a dynamic image at 25 frames per second (fps) may be recorded.

[0060] A plurality of exhaust ports 13f are provided on the bottom plate 13d of the lower chamber 13. A gas exhaust pipe 51 is connected to the exhaust port 13f, and the gas exhaust pipe 51 is connected to an exhaust device 53 via a pressure control valve 52. The gas exhaust pipe 51, the pressure control valve 52, and the exhaust device 53 form a gas exhaust section 50. The exhaust device 53 has a vacuum pump such as a turbomolecular pump, and can reduce the pressure in the lower chamber 13 to a predetermined pressure during the process.

[0061] A support beam for supporting the dielectric plate 11 is provided on the lower surface of the dielectric plate 11, and the support beam also serves as a shower head 30. The shower head 30 is formed of a metal such as aluminum, and a surface treatment based on anodization can be performed. A gas flow path 31 extending in the horizontal direction is formed in the shower head 30. The gas flow path 31 is connected to a gas release hole 32 extending downward and facing the processing chamber S located below the shower head 30.

[0062] A gas introduction pipe 45 connected to the gas flow path 31 is connected from the upper surface of the dielectric plate 11 to the shower head 30 (support beam). The gas introduction pipe 45 airtightly penetrates the supply port 12b opened in the top 12a of the upper chamber 12, and is connected to the processing gas supply source 44 via the gas supply pipe 41 airtightly combined with the gas introduction pipe 45. An opening and closing valve 42 and a flow controller 43 such as a mass flow controller are provided at a midway position of the gas supply pipe 41. The gas introduction pipe 45, the gas supply pipe 41, the opening and closing valve 42, the flow controller 43 and the processing gas supply source 44 form a processing gas supply unit 40. The processing gas supplied from the processing gas supply unit 40 is supplied to the shower head 30 via the gas supply pipe 41 and the gas introduction pipe 45, and is released into the processing chamber S via the gas flow path 31 and the gas release hole 32.

[0063] A high frequency antenna 15 is provided in the upper chamber 12 forming the antenna chamber. The high frequency antenna 15 is formed by winding an antenna wire 15a formed of a conductive metal such as copper in a loop or spiral shape. For example, multiple loop-shaped antenna wires 15a may be provided.

[0064] A power supply component 16 extending upward from the upper chamber 12 is connected to the terminal of the antenna wire 15a, and a power supply line 17 is connected to the upper end of the power supply component 16. The power supply line 17 is connected to a high-frequency power supply 19 via a matching device 18 for impedance matching. By supplying a high-frequency power of, for example, 13.56 MHz to the high-frequency antenna 15 from the high-frequency power supply 19, an induced electric field is formed in the lower chamber 13. By utilizing this induced electric field, the processing gas supplied from the shower head 30 to the processing chamber S is plasmatized to generate an inductively coupled plasma, and ions, neutral radicals, etc. in the plasma are provided to the substrate G. The high-frequency power supply 19 is a generation source for generating plasma, and the high-frequency power supply 73 connected to the stage 60 is a bias source for attracting the generated ions and giving them kinetic energy. In this way, plasma is generated by inductive coupling at the ion generation source, and a bias source composed of another power supply is connected to the stage 60 to control the ion energy. As a result, the generation of plasma and the control of ion energy can be performed independently, thereby improving the degree of freedom of the process.

[0065] The mounting table 60 has a substrate 63 and an electrostatic chuck 66 formed on the upper surface 63a of the substrate 63. The top view shape of the substrate 63 is rectangular, and has a plane size of the same degree as the substrate G mounted on the mounting table 60, the length of the long side is about 1800mm to 3400mm, and the length of the short side can be set to a size of about 1500mm to 3000mm. Relative to the plane size, the thickness of the substrate 63 can be, for example, about 50mm to 100mm. The substrate 63 is formed of stainless steel, aluminum, aluminum alloy, etc. A temperature regulating medium flow path 62a is provided on the substrate 63 in a manner that covers the entire area of ​​the rectangular plane. In addition, the temperature regulating medium flow path 62a can also be provided on the electrostatic chuck 66, for example. In addition, the substrate 63 may not be a single body formed by one component as shown in the example, but may be formed by a laminate of two components.

[0066] At both ends of the temperature regulating medium flow path 62a, there are connected a delivery pipe 62b for supplying a temperature regulating medium to the temperature regulating medium flow path 62a, and a return pipe 62c for discharging the temperature regulating medium that has been circulated and heated in the temperature regulating medium flow path 62a. The delivery pipe 62b and the return pipe 62c are respectively connected to the delivery flow path 82 and the return flow path 83, and the delivery flow path 82 and the return flow path 83 are connected to the cooler 81. The cooler 81 has a main body for controlling the temperature of the temperature regulating medium and releasing the flow rate, and a pump (not shown) for pressurizing the temperature regulating medium. In addition, a cooling medium is applied as a temperature regulating medium, and the cooling medium can be applied to Galden (registered trademark), Fluorinert (registered trademark), etc. The temperature regulation method of the example in the figure is a method of circulating the temperature regulating medium in the substrate 63, but it can also be a method of using a built-in heater in the substrate 63 and using the heater to regulate the temperature, or it can be a method of using both the temperature regulating medium and the heater to regulate the temperature. In addition, it is also possible to replace the heater and circulate the high-temperature temperature regulating medium to carry out temperature regulation accompanied by heating. The heater as a resistor is formed of tungsten, molybdenum, or a compound of any of these metals and aluminum oxide, titanium, etc. In the example shown in the figure, the temperature control medium flow path 62a is formed in the substrate 63, but the electrostatic chuck 66 may also have a temperature control medium flow path.

[0067] On the bottom plate 13d of the lower chamber 13, a box-shaped base 68 formed of an insulating material and having a step portion on the inside is fixed, and the mounting table 60 can be mounted on the step portion of the base 68. An electrostatic chuck 66 capable of directly mounting the substrate G is formed on the upper surface of the substrate 63. The electrostatic chuck 66 has a ceramic layer 64, which is a dielectric coating formed by spraying ceramics such as alumina, and an adsorption electrode 65, which is a conductive layer buried inside the ceramic layer 64 and has an electrostatic adsorption function. The adsorption electrode 65 is connected to the DC power supply 75 via a power supply line 74 and a switch 76. When the switch 76 is turned on by the control device 90, a DC voltage is applied from the DC power supply 75 to the adsorption electrode 65 to generate a Coulomb force. Under the action of this Coulomb force, the substrate G is electrostatically adsorbed on the electrostatic chuck 66 and is held in a state of being mounted on the upper surface of the substrate 63. In addition, when the switch 76 is turned off and the switch 77 located on the static electricity removal line branched from the power supply line 74 is turned on during static electricity removal, the charge accumulated in the adsorption electrode 65 flows to the ground through the static electricity removal line. In this way, the mounting table 60 forms a lower electrode for mounting the substrate G. In addition, instead of connecting the static electricity removal line branched from the power supply line 74 to the ground, a DC power supply (not shown) that applies a DC voltage of opposite polarity to the adsorption electrode 65 may be provided, and by turning on the switch 77 between the DC power supply and the adsorption electrode, the charge accumulated in the adsorption electrode 65 flows to the ground.

[0068] A temperature sensor such as a thermocouple is provided on the substrate 63, and monitoring information of the temperature sensor is immediately transmitted to the control device 90. The control device 90 performs temperature control of the substrate 63 and the substrate G based on the transmitted temperature monitoring information. More specifically, the temperature and flow rate of the temperature control medium supplied from the cooler 81 to the conveying flow path 82 are adjusted by the control device 90. Thus, the temperature control of the mounting table 60 is performed by circulating the temperature control medium after temperature control and flow rate control in the temperature control medium flow path 62a. In addition, a temperature sensor such as a thermocouple may be provided on the electrostatic chuck 66, for example.

[0069] A rectangular frame-shaped focus ring 69 is placed on the outer periphery of electrostatic chuck 66 and substrate 63 and on the upper surface of base 68. The upper surface of focus ring 69 is set lower than the upper surface of electrostatic chuck 66. Focus ring 69 is made of ceramic such as alumina or quartz.

[0070] A power supply component 70 is connected to the lower surface of the substrate 63. A power supply line 71 is connected to the lower end of the power supply component 70, and the power supply line 71 is connected to a high-frequency power supply 73 as a bias source via a matching device 72 for impedance matching. By supplying a high-frequency power of, for example, 3.2 MHz from the high-frequency power supply 73 to the mounting table 60, ions generated by the high-frequency power supply 19, which is a generation source for plasma generation, can be attracted to the substrate G. Therefore, in the plasma etching process, the etching rate and the etching selectivity can be improved at the same time.

[0071] A plurality of, for example, twelve lift pins 78 are provided inside the mounting table 60 for lifting and lowering the substrate G in order to transfer the substrate G to and from an external transport arm (not shown). Figure 1 6 and 7. The plurality of lift pins 78 pass through the mounting table 60 and move up and down under the power of the motor transmitted through the connecting member. A bottom bellows (not shown) is provided in the through hole of the lift pin 78 that passes through the outside of the processing container to maintain the airtightness between the vacuum side and the atmosphere side in the processing container.

[0072] [Hardware structure of the control device]

[0073] Figure 2 1 is a block diagram showing an example of the hardware structure of the control device 90 of this embodiment. Figure 2As shown, the control device 90 includes a CPU (Central Processing Unit) 500, a RAM (Random Access Memory) 501, a ROM (Read Only Memory) 502, an auxiliary storage device 503, a communication interface (I / F) 504, an input / output interface (I / F) 505, and a medium interface (I / F) 506.

[0074] The CPU 500 operates and controls each unit based on a program stored in the ROM 502 or the auxiliary storage device 503. The ROM 502 stores a boot program executed by the CPU 500 when the control device 90 is activated, a program depending on the hardware of the control device 90, and the like.

[0075] The auxiliary storage device 503 is, for example, a HDD (Hard Disk Drive) or an SSD (Solid State Drive). The auxiliary storage device 503 stores programs executed by the CPU 500 and data used by the programs. The CPU 500 reads the programs from the auxiliary storage device 503 and loads them into the RAM 501, and executes the loaded programs.

[0076] The communication I / F 504 communicates with each part of the substrate processing apparatus 100 via a communication line such as a LAN (Local Area Network). The communication I / F 504 receives data from each part of the substrate processing apparatus 100 via the communication line and sends it to the CPU 500, and sends data generated by the CPU 500 to each part of the substrate processing apparatus 100 via the communication line.

[0077] The CPU 500 controls input devices such as a keyboard and output devices such as a display via the input / output I / F 505. The CPU 500 acquires a signal input from the input device via the input / output I / F 505 and transmits the signal to the CPU 500. In addition, the CPU 500 outputs generated data to the output device via the input / output I / F 505.

[0078] The medium I / F 506 reads the program or data stored in the recording medium 507 and stores it in the auxiliary storage device 503. The recording medium 507 is, for example, an optical recording medium such as a DVD (Digital Versatile Disc) or a PD (Phasechange rewritable disk), an optical magnetic recording medium such as an MO (Magneto-Optical disk), a magnetic tape medium, a magnetic recording medium, or a semiconductor memory.

[0079] The CPU 500 of the control device 90 reads the program to be loaded into the RAM 501 from the recording medium 507 and stores it in the auxiliary storage device 503 . However, as another example, the program may be acquired from another device via a communication line and stored in the auxiliary storage device 503 .

[0080] The control device 90 controls the operation of each component of the substrate processing device 100, such as the cooler 81, the high frequency power supply 19, 73, the DC power supply 75, the processing gas supply unit 40, the gas exhaust unit 50, and the camera 25. The CPU 500 performs a predetermined process according to a plan (process plan) stored in the storage area of ​​the RAM 501 or the ROM 502. The control information of the substrate processing device 100 for the process conditions is set in the plan. The control information includes, for example, gas flow rate, pressure in the processing container 10, temperature in the processing container 10, temperature of the substrate 63, process time, etc.

[0081] The program applied by the recipe and the control device 90 may be stored on, for example, a hard disk, an optical disk, a magneto-optical disk, etc. In addition, the recipe, etc. may be placed in the control device 90 and read out in a state of being stored in a removable computer-readable recording medium such as a CD-ROM, a DVD, a memory card, etc.

[0082] [Functional structure of control device]

[0083] Figure 3 1 is a block diagram showing an example of the functional structure of the control device 90 of the present embodiment. Figure 3 As shown, the control device 90 of the present embodiment includes a shooting control unit 91 , a dynamic image storage unit 92 , a shake detection unit 93 , an output unit 94 , and a substrate processing unit 95 .

[0084] The imaging control unit 91, the shake detection unit 93, the output unit 94, and the substrate processing unit 95 are configured by, for example, Figure 2 The CPU 500 shown in FIG. 1 executes a program loaded into the RAM 501. The dynamic image storage unit 92 is composed of, for example, Figure 2 The RAM 501 or the secondary storage device 503 shown is implemented.

[0085] The imaging control unit 91 controls the camera 25 to image the substrate G placed on the mounting table 60. The imaging control unit 91 stores the moving image captured by the camera 25 in the moving image storage unit 92.

[0086] The shooting control unit 91 controls the camera 25 to shoot a dynamic image (hereinafter also referred to as a "substrate dynamic image"), which includes a state in which the substrate G is held on the mounting table 60 (electrostatic suction cup 66) due to electrostatic adsorption in the processing container 10 (hereinafter also referred to as the "first state"), to a state in which the electrostatic adsorption of the substrate G is released and the substrate G is raised by the lifting pins 78 after being subjected to a destaticization treatment using plasma (hereinafter also referred to as the "second state").

[0087] The moving image storage unit 92 stores the substrate moving image captured by the camera 25. The substrate moving image is stored in association with information indicating the time when the substrate G starts to rise by the lift pins 78 and the time when the rise ends.

[0088] The shaking detection unit 93 detects the shaking degree of the substrate. The shaking detection unit 93 includes an angle detection unit 931, an angle tracking unit 932, a difference calculation unit 933, and a judgment unit 934. The angle detection unit 931 detects the position of the corner of the substrate based on the first image captured in the first state included in the substrate dynamic image. The angle detection unit 931 detects the corner of the substrate closest to the camera 25 while starting the shaking detection of the substrate.

[0089] The corner detection unit 931 may extract a plurality of frame images from the substrate dynamic image continuously or at predetermined intervals in a time series, take the earliest frame of the plurality of frame images as the first image, and detect the position of the corner of the substrate based on the earliest frame.

[0090] The corner tracking unit 932 tracks the position of the corner of the substrate based on a plurality of images captured in time series after the first image included in the substrate dynamic image. The corner tracking unit 932 tracks the position of the detected corner and acquires the height of the corner of the substrate.

[0091] The corner tracking unit 932 may sequentially track the position of the corner of the substrate in each frame image subsequent to the first image among the plurality of frame images.

[0092] The difference calculation unit 933 calculates the change in the height direction (Y coordinate) of the position of the corner of the substrate tracked. The determination unit 934 determines the degree of substrate shaking based on the change. For example, the difference calculation unit 933 may detect the difference in the Y coordinate between adjacent frames in each frame image of the substrate dynamic image as the substrate shaking.

[0093] The output unit 94 outputs a warning when the amount of change in the Y coordinate exceeds a predetermined threshold value. The warning is for notifying that the determined degree of fluctuation of the substrate may exceed a normal range.

[0094] The substrate processing unit 95 performs substrate processing such as film formation and etching on the substrate. The substrate processing is performed in a state where the substrate G is electrostatically attracted to the mounting table 60 by the electrostatic chuck 66 .

[0095] [Processing flow of the status judgment method]

[0096] Figure 4 1 is a flowchart showing an example of the state determination method of the present embodiment. The state determination method of the present embodiment is executed by the control device 90 .

[0097] In step S1, the imaging control unit 91 captures a dynamic image (substrate dynamic image) of the substrate G placed on the stage 60 by controlling the camera 25. The imaging control unit 91 controls to capture a substrate dynamic image that records the ascending process of the substrate G, wherein the substrate dynamic image includes a first state in which the substrate G is held on the stage 60 (electrostatic chuck 66) by electrostatic adsorption, and a second state in which the electrostatic adsorption of the substrate G is released and the substrate G is ascended by the lift pins 78 after being subjected to a destaticizing process using plasma.

[0098] The substrate dynamic image captured by the camera 25 may include other states as long as it includes the first state to the second state. For example, the imaging control unit 91 may capture images of a series of processes performed on the substrate G from the start to the end.

[0099] The imaging control unit 91 stores the substrate dynamic image captured by the camera 25 in the dynamic image storage unit 92. The imaging control unit 91 stores information indicating the time when the substrate G starts to rise by the lifting pins 78 after the static electricity removal process and the time when the rise ends in association with the substrate dynamic image. When the substrate G is captured by a plurality of cameras 25, the imaging control unit 91 stores a plurality of substrate dynamic images captured by each camera 25 in the dynamic image storage unit 92 in synchronization with the imaging time serving as a reference. The imaging time serving as a reference is, for example, the time when the substrate G starts to rise by the lifting pins 78.

[0100] In step S2, the jitter detection unit 93 reads the substrate dynamic image stored in the dynamic image storage unit 92. Then, a jitter detection process is performed to detect the up and down jitter of the substrate G caused by the rise of the lifting pins 78 based on the read substrate dynamic image. The details of the jitter detection process will be described based on Figure 5 To be described later.

[0101] The substrate dynamic image is a dynamic image of the substrate G lifted (pin-up) by the lifting pins, taken from the side in the horizontal direction. The substrate G has a size of at least 1800mm to 3400mm on the long side and 1500mm to 3000mm on the short side. On the other hand, the thickness is 0.2mm to several mm, so it is easy to deform and bend. The deformation and deflection produced change with the lifting of the lifting pins, which becomes the cause of the shaking of the substrate G. In the case of insufficient static electricity removal treatment, the substrate G is difficult to detach from the mounting table 60 due to the charge remaining on the mounting table 60, and the substrate G is further deformed and deflected when the lifting pins are lifted. Therefore, in the case of insufficient static electricity removal treatment, the shaking of the substrate G caused by the rise of the lifting pins 78 shown in the substrate dynamic image is different from that when the static electricity removal treatment is normally fully implemented.

[0102] (Shake detection processing)

[0103] Figure 5 This is a diagram showing the shake detection process of this embodiment ( Figure 4 The jitter detection process is performed by the jitter detection unit 93 and the output unit 94.

[0104] In step S2-1, the corner detection unit 931 of the shake detection unit 93 acquires the x-th frame (hereinafter also referred to as "target frame") from the base film dynamic image. Here, x is a positive integer. The target frame is an example of a first image included in the dynamic image.

[0105] In step S2-2, the corner detection unit 931 detects the corner of the substrate G from the x-th frame. The corner detection unit 931 detects the corner closest to the camera 25 among the four corners of the substrate. When two or more corners of the four different corners of the substrate are detected, the corner detection unit 931 may determine one corner from the four different corners of the substrate, or may perform the processing after step S2-3 for each of the two or more different corners detected. In addition, the corner detection unit 931 may detect the corner of the substrate G after converting the x-th frame into grayscale or dividing it.

[0106] The corner detection method can use, for example, Harris corner detector, etc., to define the points where the pixel values ​​change significantly as the corner points of the image feature points for all nearby pixels, and perform corner detection. However, the corner detection method is not limited to this. Figure 6 In the example of , the corner detection unit 931 detects image feature points such as B1, B2, B3, ... which are candidates for corners.

[0107] In step S2-3, the corner detection unit 931 selects the corners within the predetermined area. That is, the corners outside the predetermined area are deleted. Figure 7In the example shown in FIG. 1 , the corner detection unit 931 selects a corner B1 within a predetermined area A for one corner of the substrate.

[0108] Regarding the predetermined area (e.g. Figure 7 An area of ​​a certain size is pre-specified in the area A), in which other corners in the processing container 10 will not be erroneously detected, and detection can be performed even if the substrate is placed on the mounting table 60 with a slight deviation.

[0109] In step S2-4, the corner tracking unit 932 tracks the position of the corner of the substrate based on a plurality of frames captured in time series after the xth frame included in the substrate dynamic image. For example, n frames from the x+1th to the x+nth frames captured in time series after the xth frame are acquired from the substrate dynamic image. Here, n is a predetermined positive integer, which is the number of predetermined frames used to track the position of the corner. In the present embodiment, n is, for example, 100.

[0110] The corner tracking unit 932 tracks the corner of the substrate G selected in S2-3 in time series for n frames from x+1 to x+n, and obtains the position (Y coordinate) in the height direction perpendicular to the mounting surface of the substrate G.

[0111] As a result, in the Figure 7 After Figure 8 In the example of FIG. 1 , as the substrate G rises due to the lifting pins, the corner tracking unit 932 tracks the corner B1 of the substrate G upward in the height direction indicated by the arrow T, and obtains the Y coordinate of the corner in each frame. The corner tracking method can use the Lucas-Kanade method, for example. However, the corner tracking method is not limited to this.

[0112] In step S2-5, the difference calculation unit 933 calculates the inter-frame difference (change amount) of the acquired Y coordinate. The inter-frame difference of the Y coordinate is detected as the magnitude of the substrate shake.

[0113] Fig. 9 An example of the result of calculating the inter-frame difference of the acquired Y coordinate is shown. Fig. 9 The horizontal axis represents time, and the vertical axis represents the Y coordinate (pixel). For ease of calculation, the value of the Y coordinate is set to increase in the descending direction. Therefore, the smaller the value of the Y coordinate (pixel) of the vertical axis, the higher the substrate G rises. In addition, regarding the unit of the height direction position, since the camera 25 is fixed and the distance between it and the object does not change, it is convenient to use pixels constituting the image to represent it, but a commonly used distance unit such as centimeters (cm) can also be used.

[0114] exist Fig. 9In the enlarged view of the enlarged portion C, the Y coordinate of the corner B1 gradually decreases while changing. That is, the substrate G rises while changing up and down. The inter-frame difference of the Y coordinate refers to the difference of the Y coordinate between adjacent frames. The maximum value of the inter-frame difference of the Y coordinate is the maximum value of the shaking of the substrate when the lifting pin is lifted. Therefore, the difference calculation unit 933 calculates the maximum value of the upward difference and the maximum value of the downward difference of the Y coordinate between adjacent frames of the position of the corner of the substrate tracked.

[0115] exist Fig. 9 In the example, the maximum value Max1 of the upward difference between adjacent frames of the Y coordinate is the maximum value of the Y coordinate when the substrate G shakes downward. In addition, the maximum value Max2 of the downward difference between adjacent frames of the Y coordinate is the maximum value of the Y coordinate when the substrate G shakes upward.

[0116] In step S2-6, the determination unit 934 determines whether the maximum value of the difference exceeds a predetermined threshold value. The determination unit 934 determines the maximum value Max1 of the upward difference (the maximum value when the substrate G is shaken downward, Fig. 9 In addition, the determination unit 934 determines whether the maximum value Max2 of the downward difference (the maximum value when the substrate G shakes upward, in Fig. 9 The first threshold and the second threshold are preset within a range of about 1 to 2 cm.

[0117] The determination unit 934 determines "yes" when it determines that the maximum value of the upward difference exceeds the predetermined first threshold value, or when it determines that the maximum value of the downward difference exceeds the predetermined second threshold value. In this case, in step S2-7, the output unit 94 ends the processing after outputting a warning.

[0118] In step S2-7, when the maximum value of the difference does not exceed the predetermined threshold, that is, when the determination unit 934 determines that the maximum value of the upward difference does not exceed the first threshold and the maximum value of the downward difference does not exceed the second threshold, the determination is "No". In this case, the process is terminated without outputting a warning.

[0119] Thus, when the shaking magnitude of the Y coordinate exceeds the threshold, it is determined that the shaking degree (magnitude) of the substrate exceeds the normal range, and a warning is output. Accordingly, the user can instruct the control device 90 to perform cleaning in the processing container 10. Thus, when the substrate is detached, cleaning can be performed before the substrate breaks or jumps.

[0120] Furthermore, in step 2-4, the corner tracking unit 932 tracks the position of the corner of the base sheet based on a plurality of frames captured in time series after the xth frame included in the base sheet dynamic image.

[0121] In this case, the maximum value of the upward difference and the maximum value of the downward difference may be calculated based on the difference in the height direction between the positions of the corners of the substrate of the frame images that are continuous in time series among the plurality of frame images.

[0122] Alternatively, the maximum value of the upward difference and the maximum value of the downward difference may be calculated based on the difference in the height direction between the positions of the corners of the substrate of the frame images spaced apart in time series among the plurality of frame images.

[0123] [Effect example]

[0124] Fig.10 The figure shows the flow of substrate processing, static electricity removal processing (static electricity removal start, static electricity removal end), and cleaning in the substrate processing apparatus 100 . Fig.10 The substrate processing shown on the left side of the dotted line represents the first to m-th substrate processing after cleaning is performed from top to bottom in the substrate processing apparatus 100 .

[0125] In the substrate processing apparatus 100, a DC voltage is applied to the adsorption electrode 65 of the electrostatic chuck 66 to adsorb the substrate to the electrostatic chuck 66, and substrate processing such as film formation is performed. Fig.10 In the static electricity removal process shown on the right side of the vertical dotted line, when the substrate G is detached from the electrostatic chuck 66 after the substrate treatment, plasma for static electricity removal is generated and the adsorption electrode 65 is grounded, for example. As a result, the substrate G is lifted by the lifting pins 78 in a state where the residual charge is removed. At this time, if the static electricity removal is insufficient, the substrate may be cracked, insulation breakdown may occur due to ESD (ElectroStatic Discharge), etc.

[0126] exist Fig.10 As shown, immediately after cleaning, there are no byproducts attached to the electrostatic chuck 66, and the substrate G can be completely desorbed by performing static electricity removal. At this time, the substrate G shakes less when the lift pins are lifted. When the number of substrates to be processed increases, byproducts (dirt) will adhere to the electrostatic chuck 66 during substrate processing. The byproducts are charged, and even if static electricity removal is performed, there will be residual charges, and the electrostatic chuck 66 will not completely release the adsorption of the substrate G. At this time, it can be considered that the substrate G is difficult to peel off from the electrostatic chuck 66, and the up and down shaking of the substrate G increases when the lift pins are lifted.

[0127] Furthermore, when the amount of byproducts (dirt) attached to the electrostatic chuck 66 increases, the adsorption of the substrate G to the electrostatic chuck 66 further deteriorates. That is, even if the static electricity removal process is performed, the static electricity cannot be fully removed, and the adsorption force of the electrostatic chuck 66 on the substrate G remains strong. At this time, the substrate G sometimes shakes up and down greatly when the lifting pins are lifted. As a result, the substrate G may break or jump up when the lifting pins are lifted.

[0128] In the state determination method of this embodiment, the degree of contamination of the electrostatic chuck 66 (the degree of adhesion of byproducts) can be indirectly predicted based on the magnitude of the up-and-down movement of the substrate G. Thus, the magnitude of the up-and-down movement of the substrate G is used as an indicator for cleaning the inside of the processing container 10 including the electrostatic chuck 66.

[0129] The magnitude of the up and down shaking of the substrate G can be determined by the difference in the Y coordinates between adjacent frames. Therefore, when the difference in the Y coordinates between adjacent frames exceeds a predetermined threshold, a warning is output to urge cleaning of the processing container 10 before the substrate G is broken. In this way, cleaning can be performed at an appropriate time, and damage to the substrate G when the lift pins are lifted can be avoided.

[0130] In addition, there is almost no lateral shaking of the substrate when the substrate is detached. Therefore, in the state judgment method of this embodiment, the difference in the Y coordinates between adjacent frames in the time series is compared with the threshold, and the degree of contamination of the electrostatic suction cup 66 is predicted based on the comparison result.

[0131] As described above, the state judgment method of this embodiment includes: step (a), capturing a dynamic image, the dynamic image including a first state in which the substrate is held on a mounting table (electrostatic suction cup) due to electrostatic adsorption, to a second state in which the electrostatic adsorption of the substrate is released and the substrate is raised by lifting pins after the static electricity removal treatment; step (b), detecting the position of the corner of the substrate based on a first image captured in the dynamic image of the first state; step (c), tracking the position of the corner of the substrate based on a plurality of images captured in a time series after the first image contained in the dynamic image; step (d), calculating the change in the position of the tracked corner of the substrate in the height direction; step (e), judging the degree of shake of the substrate based on the change; step (f), outputting a warning when the determined degree of shake of the substrate exceeds a predetermined threshold.

[0132] In the state judgment method of this embodiment, based on the dynamic image obtained and saved in step (a), that is, after step (a) is completed, steps (b) to (f) are performed. In addition, steps (b) to (f) can also be performed before step (a) is completed, that is, while continuing to shoot, the corner of the substrate is tracked in real time to judge the degree of shaking. Thus, based on the determined degree of shaking of the substrate, a warning can be output in real time before the static electricity removal of the substrate is completed or before the processing of the next substrate begins.

[0133] As described above, according to the state determination method executed by the substrate processing apparatus of the present embodiment, the shaking state of the substrate when the substrate is detached from the electrostatic chuck can be determined with high accuracy.

[0134] It should be understood that the state determination method, substrate processing device, and program of the embodiments disclosed herein are illustrative in all aspects and are not restrictive. The embodiments can be deformed and improved in various ways without departing from the claimed technical solution and its main purpose. The matters described in the above-mentioned multiple embodiments can adopt other structures within the scope of non-contradiction, and can be combined within the scope of non-contradiction.

[0135] The substrate processing device 100 of the present invention can also be applied to any type of device such as PE-ALD (Plasma Enhanced Atomic Layer Deposition), PE-CVD (Plasma Enhanced Chemical Vapor Deposition) and dry etching.

Claims

1. A state determination method executed in a substrate processing device, characterized in that: The substrate processing device comprises: Handling containers; a loading table for loading a substrate in the processing container; An electrostatic chuck, which is disposed on the mounting table and electrostatically adsorbs the substrate; Lifting pins that lift and lower the substrate relative to the stage; and a photographing unit, which photographs the substrate, The state determination method comprises: Step (a), capturing a dynamic image, wherein the dynamic image includes a first state in which the substrate is held on the electrostatic chuck due to electrostatic adsorption, and a second state in which the electrostatic adsorption of the substrate is released and the substrate is lifted by lift pins after a static electricity removal process; Step (b), detecting the position of the corner of the substrate based on a first image captured in the first state and included in the dynamic image; Step (c), tracking the position of the corner of the substrate based on a plurality of images captured in time series after the first image and included in the dynamic image; Step (d), calculating the change in the height direction of the tracked corner of the substrate; Step (e), determining the shaking degree of the substrate based on the change amount; and Step (f), outputting a warning based on the determined degree of shaking of the substrate.

2. The state determination method according to claim 1, characterized in that: In the step (d), as the shaking degree of the substrate, the maximum value of the upward change in the position of the corner of the substrate tracked in the height direction relative to the mounting surface of the substrate and the maximum value of the downward change in the height direction are calculated, In the step (f), a warning is output when the maximum value of the downward change amount exceeds a predetermined first threshold value or when the maximum value of the upward change amount exceeds a predetermined second threshold value.

3. The state determination method according to claim 2, characterized in that: In the step (b), a plurality of frame images are extracted from the dynamic image continuously in time series or at predetermined intervals in time series, and the position of the corner of the substrate is detected based on the first image among the plurality of frame images.

4. The state determination method according to claim 3, characterized in that: In the step (c), the position of the corner of the substrate is tracked sequentially in each of the frame images that follows the first image in time series among the plurality of frame images.

5. The state determination method according to claim 3 or 4, characterized in that: The maximum value of the upward change amount and the maximum value of the downward change amount are calculated based on the change amount in the height direction of the position of the corner of the substrate of the frame images separated by a predetermined interval in time series among the plurality of frame images.

6. The state determination method according to claim 3 or 4, characterized in that: The maximum value of the upward change amount and the maximum value of the downward change amount are calculated based on the change amount in the height direction of the position of the corner of the substrate of the frame images that are continuous in time series among the plurality of frame images.

7. The state determination method according to any one of claims 1 to 4, characterized in that: After the step (a) is completed, the steps (b) to (f) are performed.

8. The state determination method according to any one of claims 1 to 4, characterized in that: The steps (b) to (f) are performed before the step (a) is completed, and the warning is output before the processing of the next substrate is started based on the determined degree of shaking of the substrate.

9. The state determination method according to any one of claims 1 to 4, characterized in that: The substrate processing device is a flat panel display manufacturing device.

10. A substrate processing device, characterized in that: include: Handling containers; a loading table for loading a substrate in the processing container; An electrostatic chuck, which is disposed on the mounting table and electrostatically adsorbs the substrate; Lifting pins for lifting and lowering the substrate relative to the mounting table; A photographing unit, which photographs the substrate; and Control device, The control device comprises: a photographing control unit for photographing a dynamic image, the dynamic image including a first state in which the substrate is held on the electrostatic chuck by electrostatic adsorption, and a second state in which the electrostatic adsorption of the substrate is released and the substrate is lifted by the lift pins after a static electricity removal process; a corner detection unit configured to detect a position of a corner of the substrate based on a first image captured in the first state and included in the dynamic image; a corner tracking unit that tracks the position of the corner of the substrate based on a plurality of images captured in time series after the first image and included in the dynamic image; a difference calculation unit that calculates a change in the position of the tracked corner of the substrate in the height direction; a determination unit configured to determine a degree of shaking of the substrate based on the amount of change; and An output unit outputs a warning according to the determined degree of shaking of the substrate.

11. A program, characterized in that: The program is used to make the control device execute the following steps: Step (a), capturing a dynamic image, wherein the dynamic image includes a first state in which the substrate is held on the electrostatic chuck due to electrostatic adsorption, and a second state in which the electrostatic adsorption of the substrate is released and the substrate is lifted by the lifting pins after the static electricity removal process; Step (b), detecting the position of the corner of the substrate based on a first image captured in the first state and included in the dynamic image; Step (c), tracking the position of the corner of the substrate based on a plurality of images captured in time series after the first image and included in the dynamic image; Step (d), calculating the change in the height direction of the tracked corner of the substrate; Step (e), judging the shaking degree of the substrate based on the change amount; and Step (f), outputting a warning based on the determined degree of shaking of the substrate.

Images