Packaging adapter plate, preparation method thereof and packaging structure

Abstract

The invention provides a packaging adapter plate, a preparation method thereof and a packaging structure, and the preparation method comprises the steps: providing a first substrate and a second substrate, bonding the first substrate and the second substrate, obtaining a bonding structure with a micro-channel through hole through a patterned groove formed in the bonding surface of the first substrate and the second substrate, and then, carrying out the packaging of the micro-channel through hole through the patterned groove in the bonding surface of the first substrate and the second substrate. And forming a blind hole in the bonding structure, and finally, forming a metal conductive column in the bonding structure, thereby meeting the electrical connection requirement of the packaging adapter plate. The micro-channel through holes are formed in the packaging adapter plate in an embedded mode in a bonding mode, flowing heat dissipation fluid can be contained through the micro-channel through holes, a transverse heat conduction channel is provided for the packaging adapter plate, the heat conduction capacity of a follow-up packaging structure is effectively improved, and the stability and reliability of the packaging structure are further improved.

Description

Technical Field

[0001] The present application relates to the technical field related to semiconductor packaging, and in particular to a packaging adapter board and a preparation method and a packaging structure thereof. Background Art

[0002] As people's requirements for the performance of electronic products continue to increase, semiconductor packaging structures are developing in the direction of miniaturization, high density, multi-function and systematization. The existing packaging structure is to directly connect the chip vertically on the substrate through an adapter plate. In this case, the method of further reducing the feature size of the integrated circuit and the line width of the interconnection line to improve performance is limited by the physical properties of the material and the equipment process. The traditional Moore's Law has been difficult to continue to develop.

[0003] At present, advanced packaging methods include: Wafer Level Chip Scale Packaging (WLCSP), Fan-Out Wafer Level Package (FOWLP), Flip Chip, Package on Package (POP), etc. Usually, the chip is flipped on the upper surface of the passive adapter, and then mounted on the substrate through the pads or solder balls on the lower surface of the adapter to form a packaging structure. As the chip technology node continues to shrink, the power density of the chip continues to increase, especially the application of vertical through-hole adapter technology in 2.5D / 3D integrated packaging, the heat dissipation problem is becoming more and more important.

[0004] Therefore, how to provide a packaging adapter plate and its preparation method and packaging structure to improve the heat dissipation problem of 2.5D / 3D integrated packaging and improve the stability and reliability of the packaging structure has become a research focus for technical personnel in this field. Summary of the invention

[0005] The purpose of the present application is to provide a packaging adapter plate and its preparation method and packaging structure, which effectively improves the integration of the product, realizes the multifunctionality of the product, and has the advantages of good heat dissipation, high product reliability, small packaging volume, low production cost and high product yield.

[0006] In a first aspect, an embodiment of the present application provides a method for preparing a package adapter plate, which includes:

[0007] Providing a first substrate and a second substrate, wherein the surfaces of the first substrate and the second substrate are provided with patterned grooves;

[0008] Bonding the first substrate and the second substrate to each other to form a bonding structure with a microfluidic through hole, wherein the microfluidic through hole is formed by combining grooves on the surfaces of the first substrate and the second substrate;

[0009] A plurality of blind holes are formed in the bonding structure, wherein the blind holes avoid the microfluidic channel through holes and vertically extend from the upper surface of the bonding structure to one side of the lower surface;

[0010] Filling the blind hole with metal material to form a metal conductive column;

[0011] A thinning process is adopted to thin one side of the lower surface of the bonding structure to form a lower thinning surface, and the lower thinning surface reveals the lower end surface of the metal conductive column.

[0012] In a possible implementation manner, the first substrate and the second substrate are silicon substrates, and the surface groove patterns of the first substrate and the second substrate are the same.

[0013] In a possible embodiment, before the step of forming a plurality of blind holes in the bonding structure, the step further includes thinning one side of the upper surface of the bonding structure using a thinning process to form an upper thinning surface, and the blind holes vertically extend from the upper thinning surface to one side of the lower surface of the bonding structure.

[0014] In a possible implementation manner, the upper thinned surface is located above the microfluidic channel through hole and maintains a preset distance from the microfluidic channel through hole.

[0015] In a possible implementation, before the step of filling the blind hole with metal material to form a metal conductive column, an insulating layer and a diffusion barrier layer are sequentially formed on the bottom wall and side wall of the blind hole, and the metal conductive column is formed on the diffusion barrier layer.

[0016] In a possible implementation manner, the microfluidic through hole includes at least an inlet end and an outlet end penetrating through the side wall surface of the bonding structure.

[0017] In a second aspect, the present application further provides a packaging adapter board, including:

[0018] substrate;

[0019] A microfluidic through hole is arranged in the substrate, and the microfluidic through hole at least includes an inlet end and an outlet end penetrating through the side wall surface of the substrate;

[0020] The metal conductive column is arranged in the substrate and vertically penetrates the substrate avoiding the micro-channel through hole.

[0021] In a possible implementation manner, the metal conductive pillar includes a copper conductive pillar.

[0022] In a possible implementation, the structure of the microchannel through hole includes a linear, spoiler column or serpentine microchannel structure, and the vertical depth of the microchannel through hole and the inlet and outlet ends is less than the thickness of the substrate.

[0023] In a third aspect, the present application further provides a packaging structure, comprising the packaging adapter plate according to any one of claims 7 to 9, and further comprising:

[0024] A substrate, used for carrying the packaging adapter plate and electrically connected to the bottom end of the metal conductive column;

[0025] A wiring layer, arranged on the package adapter board, wherein metal wiring is arranged in the wiring layer, and the metal wiring is electrically connected to the top of the metal conductive column;

[0026] A chip stacking layer is arranged on the wiring layer. A plurality of chips are arranged in the chip stacking layer. The chips are electrically connected to the metal wiring.

[0027] Compared with the prior art, the present invention has at least the following beneficial effects:

[0028] The present application provides a packaging adapter plate and a preparation method and packaging structure thereof. The preparation method provides a first substrate and a second substrate, and then the first substrate and the second substrate are bonded to each other, and a bonding structure with microchannel through holes is obtained by using patterned grooves arranged on the bonding surfaces of the first substrate and the second substrate. Then, a blind hole is formed in the bonding structure, and finally, a metal conductive column is formed in the bonding structure to meet the electrical connection requirements of the packaging adapter plate. The present application forms microchannel through holes embedded in the packaging adapter plate by bonding, and the microchannel through holes can accommodate the flowing heat dissipation fluid, providing a stable lateral heat conduction channel for the packaging adapter plate, effectively improving the heat conduction capacity of the subsequent packaging structure, and further increasing the stability and reliability of the packaging structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0030] Figure 1 The present invention is a flowchart of a method for preparing a packaging adapter plate according to an embodiment of the present application.

[0031] Figure 2 to Figure 13 It is a structural schematic diagram of a packaging adapter board preparation process according to different embodiments of the present application.

[0032] Fig.14 It is a structural schematic diagram of a packaging structure according to an embodiment of the present application.

[0033] Illustration Description:

[0034] 10 silicon substrate; 100' bonding structure; 100 package adapter; 1001 upper thinning surface; 1002 lower thinning surface; 101 groove; 102 edge protrusion; 103 middle protrusion; 104 spoiler column; 110 first substrate; 120 second substrate; 130 microchannel through hole; 131 inlet end; 132 outlet end; 140 blind hole; 150 metal conductive column; 200 substrate; 300 wiring layer; 400 chip stacking layer; 410 chip. DETAILED DESCRIPTION

[0035] The following describes the implementation of the present application through specific embodiments, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. The present application can also be implemented or operated through other different specific implementations, and the details in the present application can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application.

[0036] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be internal communication between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances. In addition, the terms "first" and "second" are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0037] In the existing integrated packaging structure, the chip stacking layer 400 mainly relies on the packaging cover and heat sink structure above for heat dissipation. The heat dissipation path below the chip stacking layer 400 is mainly composed of low thermal conductivity materials such as bottom filling material and silicon substrate, so the thermal resistance below the chip stacking layer 400 is relatively large. As the chip performance and power increase, the heat generated by the chip stacking layer 400 will further increase, and top heat dissipation alone can no longer meet the performance and heat dissipation requirements of the existing 2.5D / 3D integrated packaging structure.

[0038] Based on the above analysis, the present application provides a packaging adapter plate and a preparation method and a packaging structure thereof. By embedding a microchannel through hole 130 inside the packaging adapter plate, the packaging adapter plate is endowed with the ability to actively dissipate heat, which is capable of conducting divergent heat conduction of the heat generated by the chip, thereby solving the problem of a single heat dissipation direction of the middle layer chipset of the existing stacked chips, and realizing the lateral conduction of the heat of the chip from the inside of the packaging adapter plate, thereby better improving the heat dissipation capacity of the 2.5D / 3D integrated packaging structure, and improving the product stability and reliability of the packaging structure. This will be explained in conjunction with specific embodiments below.

[0039] According to one aspect of the present application, see Figure 1 , a method for preparing a packaging adapter plate is provided.

[0040] First, referring to 3, step S1 is performed to provide a first substrate 110 and a second substrate 120, wherein the surfaces of the first substrate 110 and the second substrate 120 are provided with patterned grooves 101.

[0041] In one embodiment, the first substrate 110 and the second substrate 120 both have a planarized surface, and the materials used include silicon, glass or other substrate materials, and the surfaces of the first substrate 110 and the second substrate 120 are further provided with patterned grooves 101, and the patterned shapes of the grooves 101 include straight lines, S-shaped or folded lines, etc. Figure 2-3 In a specific embodiment, two silicon substrates 10 of the same size can be provided in advance, and then a common etching process is performed on the surfaces of the two silicon substrates 10 to form grooves 101 of preset size and pattern, that is, to form a first substrate 110 and a second substrate 120. The shape and size of the grooves 101 on the first substrate 110 and the second substrate 120 are exactly the same, so as to establish a foundation for the subsequent bonding of the first substrate 110 and the second substrate 120 to form a complete microfluidic through hole 130.

[0042] In one embodiment, see Figure 3 , Figure 4 for Figure 3 A schematic diagram of the top view of the first substrate 110 and / or the second substrate 120, in the process of etching and forming, the groove 101 should avoid the edge of the silicon substrate 10, the staggered groove 101 pattern forms a ring-shaped edge protrusion 102 at the edge of the silicon substrate 10, and a plurality of middle protrusions 103 separated by the groove 101 pattern, and the plurality of middle protrusions 103 and the edge protrusion 102 together constitute the side wall surface. Further, the groove 101 should also include a plurality of openings extending through the edge protrusion 102, and the plurality of openings are interconnected through the groove 101.

[0043] Furthermore, the etching depth of the groove 101 should be less than the thickness of the silicon substrate 10 so that the groove 101 is only formed on one side of the silicon substrate 10 and its bottom can have a complete bottom wall surface to avoid etching through the upper and lower surfaces of the silicon substrate 10 .

[0044] Next, step S2 is performed to bond the first substrate 110 and the second substrate 120 to each other to form a bonding structure 100 ′ with micro-channel through holes 130 .

[0045] In one embodiment, see Figure 5 and Figure 6 The first substrate 110 and the second substrate 120 are bonded to each other by a bonding process, with the surface of the side with the groove 101 being the bonding surface, so that the groove 101 formed on the first substrate 110 can be combined with the groove 101 on the second substrate 120 to form a microchannel through hole 130. The microchannel through hole 130 is used to provide a flow channel for the heat dissipation fluid (such as circulating water flow, etc.) to flow horizontally through the bonding structure 100', so that the heat of the subsequent chip can be transversely heat-conducted through the heat dissipation fluid, which plays a role in reducing the heat of the packaging adapter 100, which is conducive to improving the stability and reliability of the packaging product.

[0046] In one embodiment, the bonding process may be silicon-silicon bonding, or polymer bonding, etc. In a specific embodiment, the edge protrusions 102 and the middle protrusions 103 of the first substrate 110 and the second substrate 120 may correspond to each other and abut against each other, and the first substrate 110 and the second substrate 120 may be bonded to each other by a melt bonding process to form a bonding structure 100', and the grooves 101 of the first substrate 110 and the second substrate 120 may be combined to form a microfluidic through hole 130, and the middle protrusions 103 and the edge protrusions 102 may jointly constitute the through hole sidewalls of the microfluidic through hole.

[0047] In one embodiment, see Figure 6 and 7 , Figure 7 for Figure 6Schematic diagram of the cross-sectional structure of the bonding structure 100' taken along the cutting line AA. The grooves 101 of the first substrate 110 and the second substrate 120 extend through the plurality of openings formed by the edge protrusions 102 and are combined with each other, forming an inlet end 131 and an outlet end 132 of the microfluidic through hole 130 on the side wall of the bonding structure 100'. In a specific embodiment, the microfluidic through hole 130 includes two opposite inlet ends 131 and two opposite outlet ends 132, and the inlet end 131 and the outlet end 132 are respectively located in the middle of different side walls of the bonding structure 100'. The heat dissipation fluid enters the bonding structure 100' from the inlet end 131 of the microfluidic through hole 130, fills the inside of the microfluidic through hole 130, and then flows out through the outlet end 132 of the microfluidic through hole 130, so as to realize the dynamic flow of the heat dissipation fluid in the bonding structure 100', and play a role in continuously absorbing and reducing the heat of the packaging adapter board 100.

[0048] In one embodiment, the microchannel through hole 130 in the bonding structure 100' can be a linear, spoiler column type, serpentine or other microchannel structure. In a specific embodiment, the middle protrusions 103 of the first substrate 110 and the second substrate 120 correspond one to one, abut and bond to each other to form a plurality of columnar spoiler columns 104. After the heat dissipation fluid enters the microchannel through hole 130 from the inlet end 131, the spoiler column 104 can divert the heat dissipation fluid, so that the inflow pressure of the heat dissipation fluid at the inlet end 131 is quickly reduced, and the pressure bearing capacity of the microchannel through hole 130 is improved. At the same time, the heat dissipation fluid only diverted by the diversion column can increase the flow speed of the heat dissipation fluid in the bonding structure 100', and improve the thermal conductivity of the heat dissipation fluid in the microchannel through hole 130. Furthermore, the guide column can also increase the coverage area of ​​the microchannel through hole 130 in the bonding structure 100 ′, thereby increasing the flow coverage area of ​​the heat dissipation fluid in the microchannel through hole 130 and improving the heat dissipation efficiency of the packaging adapter plate 100 .

[0049] Then, step S3 is performed to form a plurality of blind holes 140 in the bonding structure 100 ′.

[0050] In one embodiment, see Figure 8 and Fig. 9, the blind hole 140 includes a first end and a second end relative to each other, wherein the first end is located on the upper surface of the bonding structure 100', and the second end extends to the lower surface of the bonding structure 100' and maintains a preset distance with the lower surface of the bonding structure 100'. At the same time, the extension path of the blind hole 140 from the first end to the second end should avoid the microchannel through hole 130 to avoid the risk of the subsequently formed metal conductive column 150 contacting the heat dissipation fluid in the microchannel through hole 130 and causing a short circuit connection in the packaging adapter 100. In a specific embodiment, the setting position of the blind hole 140 corresponds to the setting position of the guide column, that is, the blind hole 140 can be formed in the guide column, which can prevent the blind hole 140 from being connected to the microchannel through hole 130 during the formation process.

[0051] In one embodiment, before the blind hole 140 is formed, the step of thinning the upper surface of the bonding structure 100' to form an upper thinned surface 1001 is also included, until the upper thinned surface 1001 maintains a preset distance with the microchannel through hole 130, and the blind hole 140 vertically extends from the upper thinned surface 1001 to one side of the lower surface of the bonding structure 100'. By reducing the thickness of the bonding structure 100' through the thinning process, the distance between the subsequent chip and the microchannel through hole 130 in the vertical direction is also reduced, which is conducive to improving the ability of the chip to conduct heat through the packaging adapter 100.

[0052] In one embodiment, the blind holes 140 are all formed in one process, and the punching process of the one-time forming process includes etching, laser punching and mechanical punching, preferably laser punching. The forming methods of the blind holes 140 can be the same or different, and preferably the same method is used for forming. In a specific embodiment, during the laser drilling process, the positioning device provided by the laser equipment can be used to first determine the opening position, and then the hole is punched, or a mask with a defined opening area can be used for laser irradiation drilling. If the opening position is defined by a mask, the opening position of the mask should correspond to the position of the middle protrusion 103 formed by etching on the silicon substrate 10.

[0053] Furthermore, during the laser drilling process, the size of the blind hole 140 can be controlled by precisely controlling the size of the laser beam, so that small-sized aperture processing can be achieved, and thus it can be suitable for chip packaging. In addition, during the laser irradiation and drilling process of the same blind hole 140, the size of the blind hole 140 can also be adjusted by adjusting the size of the laser beam to meet the size requirements of different parts of the blind hole 140. After the preparation of each blind hole 140 is completed, the bonding structure 100' is also cleaned to remove processing residues, and / or surface polishing is performed to make each blind hole 140 have a smooth and flat surface.

[0054] Next, step S4 is performed to fill the blind hole 140 with metal material to form a metal conductive column 150 .

[0055] In one embodiment, see Figure 10-11 , Fig.11 for Fig.10 Schematic diagram of the top view of the bonding structure 100'. The metal material is filled in the blind hole 140 at one time to form the metal conductive column 150, and the top of the metal conductive column 150 is flush with the first end of the blind hole 140, that is, the top surface of the metal conductive column 150 is exposed on one side of the upper thinning surface 1001. In order to ensure the formation quality of the metal conductive column 150, the inside of the blind hole 140 can be filled at one time by electroplating, chemical plating or liquid metal filling, and then the surface is flattened so that the top surface of the formed metal conductive column 150 is flush with the upper thinning surface 1001.

[0056] In one embodiment, before the step of completing the filling of the metal material in the blind hole 140, it also includes the step of forming an insulating layer and a diffusion barrier layer in sequence on the bottom and sidewall of the blind hole 140 (not shown in the figure) in advance, so as to avoid the subsequent formation of the metal conductive column 150 directly contacting the silicon substrate 10, causing the metal elements in the metal material to diffuse into the silicon substrate 10, affecting the stability of the subsequent electrical connection between the chip and the packaging adapter 100. In a specific embodiment, molten liquid metal can be injected into each blind hole 140, and in order to further improve the filling quality, the bonding structure 100' can be rotated during the liquid metal filling process to accelerate the liquid metal to flow into the blind hole 140, avoiding defects such as holes during the filling process. The filling process of this step is set to be carried out under a vacuum or inert gas atmosphere, which can avoid oxidation contamination of the metal material. The metal material layer to be filled can be a common metal interconnection material such as copper, aluminum, tungsten, etc., and copper is preferably used as the material of the metal conductive column 150. In another embodiment, a metal seed layer may be formed on the diffusion barrier layer in the blind hole 140 in advance, and then the metal conductive column 150 may be formed in the blind hole 140 by electroplating or chemical plating. During the metal filling process, the bonding structure 100' may be heated to prevent the metal material from being locally cooled and affecting the filling quality. Finally, after the metal conductive column 150 is formed, the top of the metal conductive column 150 is mechanically ground so that the top of the metal conductive column 150 does not exceed the first end of the blind hole 140 and is flush with the upper thinning surface 1001.

[0057] Finally, step S5 is performed to thin one side of the lower surface of the bonding structure 100 ′ using a thinning process to form a lower thinned surface 1002 , until the lower thinned surface 1002 exposes the lower end surface of the metal conductive column 150 .

[0058] In one embodiment, see Figure 12-13 , Fig.12 for Fig.11The schematic diagram of the cross-sectional structure of the packaging adapter board 100 taken along the cutting line BB in the figure shows that after the metal conductive column 150 is formed, it should also include a step of thinning one side of the lower surface of the bonding structure 100' until the bottom end surface of the metal conductive column 150 is exposed, thereby obtaining the packaging adapter board 100 with the microchannel through hole 130, and the metal conductive column 150 can penetrate the upper and lower surfaces of the packaging adapter board 100, which not only provides a conductive channel for the subsequent electrical connection between the chip and the packaging substrate 200, but also provides a heat dissipation channel for lateral heat conduction for the chip, thereby further improving the thermal stability of the packaging product. In a specific embodiment, during the process of thinning the lower surface of the bonding structure 100' and before exposing the bottom surface of the metal conductive column 150, the silicon substrate 10 near the bottom of the metal conductive column 150 is also modified by ion implantation, and the modification is to a material property in which the metal elements of the metal conductive column 150 are difficult to diffuse, so as to avoid the metal elements in the metal conductive column 150 diffusing into the nearby silicon substrate 10 during the subsequent process of continuous thinning and exposing the bottom surface of the metal conductive column 150, thereby effectively improving the electrical properties and reliability of the subsequent packaging structure.

[0059] In the second aspect, the present application also provides a packaging adapter board, see Figure 12-13 The package adapter plate 100 is prepared by the preparation method of the package adapter plate 100, and specifically includes a substrate, in which a microchannel through hole 130 and a metal conductive column 150 are provided. The microchannel through hole 130 is arranged between the upper surface (i.e., the upper thinning surface 1001) and the lower surface (i.e., the lower thinning surface 1002) of the substrate, and at least includes an inlet end 131 and an outlet end 132 that penetrate the side wall surface of the substrate to penetrate and conduct the substrate along the cross-sectional direction, and a plurality of spoiler columns 104 are spaced out in the substrate. The metal conductive column 150 is arranged in the spoiler column 104 to avoid the location area where the microchannel through hole 130 is located, and the extension direction penetrates the upper surface and the lower surface of the substrate to ensure the subsequent electrical connection between the chip and the base 200.

[0060] By etching a microchannel through hole 130 that penetrates the cross section inside the substrate, and forming an inlet end 131 and an outlet end 132 on the side wall of the substrate, a circulation channel is provided for the heat dissipation fluid to penetrate the package adapter plate 100 laterally along the microchannel through hole 130, so that the heat of the subsequent chip can be transversely heat-conducted through the heat dissipation fluid, which plays a role in quickly reducing the heat of the package adapter plate 100, which is beneficial to improving the stability and reliability of the packaged product. The metal conductive column 150 is set in the spoiler column 104, so that the microchannel through hole 130 can be avoided, and the risk of the metal conductive column 150 contacting the heat dissipation fluid in the microchannel through hole 130 inside the substrate and causing a short circuit inside the package adapter plate 100 is avoided. At the same time, the pattern morphology of the microchannel through hole 130 in the substrate can also be appropriately adjusted according to the setting density and line width of the metal conductive column 150, so as to adjust the position of the chip inside the packaged product and improve the integration of the chip inside the packaged product.

[0061] In one embodiment, the microchannel through hole 130 in the substrate can be a linear, spoiler column, serpentine or other microchannel structure, and the depth of the microchannel through hole 130 and its inlet end 131 and outlet end 132 is less than the thickness of the substrate. The heat dissipation fluid only flows into the packaging adapter plate 100 through the inlet end 131 and flows out from the outlet end 132. After the heat dissipation fluid enters the microchannel through hole 130 from the inlet end 131, the spoiler column 104 can divert the heat dissipation fluid, so that the inflow pressure of the heat dissipation fluid at the inlet end 131 is quickly reduced, and the pressure bearing capacity of the microchannel through hole 130 is improved. At the same time, the heat dissipation of the heat dissipation fluid only by the guide column can increase the flow speed of the heat dissipation fluid in the bonding structure 100', and improve the thermal conductivity of the heat dissipation fluid in the microchannel through hole 130. Furthermore, the guide column can also increase the coverage area of ​​the microchannel through hole 130 in the bonding structure 100 ′, thereby increasing the flow coverage area of ​​the heat dissipation fluid in the microchannel through hole 130 and improving the heat dissipation efficiency of the packaging adapter plate 100 .

[0062] In one embodiment, the metal conductive pillar 150 is made of commonly used metal interconnection materials such as copper, aluminum, and tungsten, and copper is preferably used as the material of the metal conductive pillar 150 .

[0063] In a third aspect, the present application also provides a packaging structure, see Fig.14, the packaging structure includes a substrate 200, a wiring layer 300, a chip stacking layer 400, and the above-mentioned packaging adapter board 100. Among them, the packaging adapter board 100 is arranged on the substrate 200, and the substrate 200 is electrically connected to the bottom end of the metal conductive column 150 through the solder ball. The wiring layer 300 is arranged on the packaging adapter board 100, and the metal wire inside it is electrically connected to the top of the metal conductive column 150. The wiring layer 300 can be a single wiring layer or a multiple wiring layer. The chip stacking layer 400 is arranged on the wiring layer 300, and a plurality of chips 410 are arranged inside it. Each chip 410 can be the same or different, and is electrically connected to the metal wire in the wiring layer 300 through the solder ball.

[0064] The present application provides a packaging adapter plate and a preparation method and packaging structure thereof. The preparation method provides a first substrate and a second substrate, and then the first substrate and the second substrate are bonded to each other, and a bonding structure with microchannel through holes is obtained by using patterned grooves arranged on the bonding surfaces of the first substrate and the second substrate. Then, a blind hole is formed in the bonding structure, and finally, a metal conductive column is formed in the bonding structure to meet the electrical connection requirements of the packaging adapter plate. The present application forms microchannel through holes embedded in the packaging adapter plate by bonding, and the microchannel through holes can accommodate the flowing heat dissipation fluid to provide a lateral heat conduction channel for the packaging adapter plate, which effectively improves the heat conduction capacity of the subsequent packaging structure and further increases the stability and reliability of the packaging structure.

[0065] The above is only a preferred implementation of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and substitutions can be made without departing from the technical principles of the present application. These improvements and substitutions should also be regarded as the scope of protection of the present application.

Claims

1. A method for preparing a packaging adapter plate, characterized in that: include: Providing a first substrate and a second substrate, wherein the surfaces of the first substrate and the second substrate are provided with patterned grooves; Bonding the first substrate and the second substrate to each other to form a bonding structure with a microfluidic through hole, wherein the microfluidic through hole is formed by combining grooves on the surfaces of the first substrate and the second substrate; A plurality of blind holes are formed in the bonding structure, wherein the blind holes avoid the microfluidic channel through holes and vertically extend from the upper surface of the bonding structure to one side of the lower surface; Filling the blind hole with metal material to form a metal conductive column; A thinning process is adopted to thin one side of the lower surface of the bonding structure to form a lower thinning surface, and the lower thinning surface reveals the lower end surface of the metal conductive column.

2. The preparation method according to claim 1, characterized in that: The first substrate and the second substrate are silicon substrates, and the surface groove patterns of the first substrate and the second substrate are the same.

3. The preparation method according to claim 1, characterized in that: Before the step of forming a plurality of blind holes in the bonding structure, the method further includes thinning one side of the upper surface of the bonding structure by a thinning process to form an upper thinning surface, wherein the blind holes vertically extend from the upper thinning surface to one side of the lower surface of the bonding structure.

4. The preparation method according to claim 3, characterized in that: The upper thinning surface is located above the microfluidic channel through hole and maintains a preset distance from the microfluidic channel through hole.

5. The preparation method according to claim 1, characterized in that: Before the step of filling the blind hole with metal material to form a metal conductive column, the method further includes sequentially forming an insulating layer and a diffusion barrier layer on the bottom wall and side wall of the blind hole, and the metal conductive column is formed on the diffusion barrier layer.

6. The preparation method according to claim 1, characterized in that: The microchannel through hole at least includes an inlet end and an outlet end penetrating through the side wall surface of the bonding structure.

7. A packaging adapter board, characterized in that: include: substrate; A microfluidic through hole is arranged in the substrate, and the microfluidic through hole at least includes an inlet end and an outlet end penetrating through the side wall surface of the substrate; The metal conductive column is arranged in the substrate and vertically penetrates the substrate avoiding the micro-channel through hole.

8. The packaging adapter board according to claim 7, characterized in that: The metal conductive pillars include copper conductive pillars.

9. The packaging adapter board according to claim 7, characterized in that: The structure of the microchannel through hole includes a linear, spoiler column or serpentine microchannel structure, and the vertical depth of the microchannel through hole and the inlet end and the outlet end is less than the thickness of the substrate.

10. A packaging structure, characterized in that: The package adapter board according to any one of claims 7 to 9 further comprises: A substrate, used for carrying the packaging adapter plate and electrically connected to the bottom end of the metal conductive column; A wiring layer, arranged on the package adapter board, wherein metal wiring is arranged in the wiring layer, and the metal wiring is electrically connected to the top of the metal conductive column; A chip stacking layer is arranged on the wiring layer. A plurality of chips are arranged in the chip stacking layer. The chips are electrically connected to the metal wiring.

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