Hot binding auxiliary device and hot binding method
By using thermal binding auxiliary devices, including positioning sockets and plug-ins, during the preparation of micro-light emitting diodes, the problem of difficult to ensure the thermal binding accuracy and quality between wafers and circuit substrates is solved, and more efficient thermal binding is achieved Effect.
Patent Information
- Application Number
- CN202411399205.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-09
- Publication Date
- 2025-02-21
AI Technical Summary
During the preparation of micro-light emitting diodes, the thermal binding accuracy and quality between the wafer and the circuit substrate are difficult to ensure, resulting in low yield and efficiency of thermal binding.
Provide a thermal binding auxiliary device, including positioning sockets and positioning plug-ins, by preparing positioning film layers on wafers and circuit substrates, forming a matrix-arranged socket unit and plug-in unit to ensure accurate docking of pads and grains and Bonding.
Through this auxiliary device, the accuracy and efficiency of thermal binding between the wafer and the circuit substrate are significantly improved, the stable connection between the pad and the grain is ensured, and the overall thermal binding yield is improved.
Smart Images
Figure CN119495685A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of semiconductor preparation, and in particular relates to a thermal binding auxiliary device and a thermal binding method. Background Art
[0002] Micro LED (Micro Light Emitting Diode) is a new type of semiconductor display device.
[0003] In the related art, when preparing micro-LEDs, it is necessary to thermally bond the wafer grains and the circuit substrate. In the thermal bonding process, the wafer grains and the pads of the circuit substrate are first positioned and docked. Then, the metal electrode solder between the grains and the pads is heated to melt, and the connection is solidified after cooling. Finally, glue is filled between the wafer and the circuit substrate.
[0004] Due to the small size and large number of crystals, higher requirements are placed on the binding accuracy and quality between the crystals and the circuit substrate. The above method is prone to inaccurate positioning and docking problems, resulting in low yield and efficiency of thermal binding. Summary of the invention
[0005] The embodiment of the present disclosure provides a thermal binding auxiliary device and a thermal binding method, which can improve the yield and efficiency of thermal binding. The technical solution is as follows:
[0006] In one aspect, an embodiment of the present disclosure provides a thermal binding auxiliary device, comprising: a positioning socket and a positioning plug-in;
[0007] The positioning socket comprises a plurality of socket units, each of which is arranged in a matrix, and each of which has a die receiving hole and a slot, wherein the slot is arranged around the die receiving hole;
[0008] The positioning plug-in includes a plurality of plug-in units, each of which is arranged in a matrix and corresponds one to one with the socket unit. The plug-in unit has a solder pad accommodating hole, and the plug-in unit is inserted into the corresponding slot so that the solder pad accommodating hole is opposite to the corresponding grain accommodating hole.
[0009] In one implementation of the present disclosure, the grain accommodating hole includes a first end and a second end, and the first end and the second end of the grain accommodating hole are respectively opposite ends of the grain accommodating hole in the axial direction, and the port orientation of the first end of the grain accommodating hole is consistent with the notch orientation of the slot, and the size of the first end of the grain accommodating hole is larger than the size of the second end of the grain accommodating hole.
[0010] In an implementation of the present disclosure, the size of the die accommodating hole gradually decreases in a direction from the first end to the second end of the die accommodating hole.
[0011] In an implementation of the present disclosure, the inner wall of the grain accommodating hole is a concave arc shape.
[0012] In an implementation of the present disclosure, the cross section of the slot is a rectangular frame, and the cross section of the plug-in unit is a rectangular frame.
[0013] In an implementation of the present disclosure, the depth of the slot is greater than the height of the plug-in unit, and the height of the plug-in unit is the dimension of the plug-in unit in its own plug-in direction.
[0014] In an implementation of the present disclosure, the depth of the slot is at least 1 μm greater than the height of the plug-in unit.
[0015] On the other hand, an embodiment of the present disclosure provides a thermal binding method, which is applied to the thermal binding auxiliary device described in the above aspect, and the thermal binding method includes:
[0016] Preparing a first positioning film layer on a side of the wafer to be transferred having the grains;
[0017] Patterning the first positioning film layer to form a positioning socket;
[0018] A second positioning film layer is prepared on one side of the circuit substrate having a pad;
[0019] Patterning the second positioning film layer to form a positioning plug-in;
[0020] The circuit substrate is placed relative to the wafer to be transferred, and the plug-in unit of the positioning plug-in is inserted into the corresponding slot of the positioning socket, so that the pad and the corresponding die are attached to each other;
[0021] The temperature is increased so that the pad and the die are bonded together.
[0022] In one implementation of the present disclosure, patterning the first positioning film layer to form a positioning socket includes:
[0023] The height of the positioning socket is 1-2 μm smaller than the thickness of the grain.
[0024] In an implementation of the present disclosure, after increasing the temperature, the thermal binding method further includes:
[0025] The metal electrode solder between the pad and the crystal grain melts, so that the positioning socket and the circuit substrate move toward each other until the positioning socket abuts against the circuit substrate.
[0026] The beneficial effects brought by the technical solution provided by the embodiments of the present disclosure include at least:
[0027] The thermal binding auxiliary device provided in the embodiment of the present disclosure is used to assist the thermal binding between the wafer and the circuit substrate. The thermal binding auxiliary device includes a positioning socket and a positioning plug-in, the positioning socket is arranged on the side of the wafer with the grain, and the positioning plug-in is arranged on the side of the circuit substrate with the pad. The positioning socket includes a plurality of socket units, each of which has a grain accommodating hole and a slot, and the grain accommodating hole is used to accommodate the grain on the wafer. The positioning plug-in includes a plurality of plug-in units, each of which has a pad accommodating hole, and the pad accommodating hole is used to accommodate the pad on the circuit substrate. When positioning and docking between the wafer and the circuit substrate, the positioning socket and the positioning plug-in move toward each other together with the wafer and the circuit substrate, and the plug-in unit will be inserted into the corresponding slot, so that the pad accommodating hole is opposite to the corresponding grain accommodating hole, so that the pad and the grain are opposite, thereby ensuring the accuracy of positioning and docking.
[0028] That is to say, the thermal binding auxiliary device provided by the embodiment of the present disclosure can effectively ensure the positioning and docking accuracy between the pad and the die, thereby improving the yield and efficiency of thermal binding. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0030] Figure 1 is a structural schematic diagram of a thermal binding auxiliary device provided by an embodiment of the present disclosure;
[0031] Figure 2 is a top view of a positioning socket provided by an embodiment of the present disclosure;
[0032] Figure 3 is a top view of a positioning plug-in provided in an embodiment of the present disclosure;
[0033] Figure 4 is a flow chart of a hot binding method provided by an embodiment of the present disclosure;
[0034] Figure 5 is a schematic diagram of preparing a positioning plug-in provided in an embodiment of the present disclosure;
[0035] Figure 6 is a schematic diagram of preparing a positioning socket provided in an embodiment of the present disclosure;
[0036] Figure 7is a schematic diagram of a thermal binding process provided by an embodiment of the present disclosure;
[0037] Figure 8 It is a schematic diagram of the thermal binding process provided by an embodiment of the present disclosure.
[0038] The symbols in the figure mean the following:
[0039] 10. Positioning socket;
[0040] 110, socket unit; 111, chip receiving hole; 112, slot;
[0041] 20. Positioning plug-in;
[0042] 210, plug-in unit; 211, pad receiving hole;
[0043] 100, wafer; 1100, grain;
[0044] 200. Circuit substrate; 2100. Solder pad.
[0045] The above drawings show clear embodiments of the present disclosure, which will be described in more detail below. These drawings and text descriptions are not intended to limit the scope of the present disclosure in any way, but to illustrate the concepts of the present disclosure to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION
[0046] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.
[0047] In order to better understand the thermal binding auxiliary device provided by the embodiment of the present disclosure, the micro light emitting diode in the related art and the thermal binding method of the micro light emitting diode are first introduced below.
[0048] Micro LED display screens have attracted much attention due to their unique properties such as high brightness, long life, and high resolution. The so-called micro LED display screen refers to the use of ultra-small micro LED vertical chips (chip size 3 to 20um), which can achieve a resolution of more than 2.5K and a brightness of hundreds of thousands or even millions of nits in a display area of less than 1 inch through thermal binding of specific integrated circuits. The above display screens can meet the needs of VR / AR, projection, and car lights, which have special requirements for brightness or resolution.
[0049] When preparing micro-LEDs, it is necessary to thermally bond the wafer grains and the circuit substrate, which is commonly known as die to wafer in the industry. The advantage of this thermal bonding is that the circuit substrate and the wafer can be set to the same type of substrate, such as sapphire or silicon. In the thermal bonding process, the wafer grains and the pads of the circuit substrate are first positioned and docked. Then, the metal electrode solder between the grains and the pads is heated to melt, and the connection is solidified after cooling. Then, glue is filled between the wafer and the circuit substrate. Finally, the epitaxial substrate of the wafer is removed by laser LLO.
[0050] Due to the small size and large number of crystal grains, higher requirements are placed on the binding accuracy and quality between the crystal grains and the circuit substrate. The above method is prone to inaccurate positioning and docking, resulting in low yield and efficiency of thermal binding. In addition, during the melting process of the metal electrode solder, the melted metal electrode solder is easy to flow. Once it flows into adjacent crystal grains, it will form a parallel connection, making it impossible to control the crystal grains individually.
[0051] In order to solve the above technical problems, the present disclosure provides a thermal binding auxiliary device. Figure 1 is a schematic diagram of the structure of the thermal binding auxiliary device, see Figure 1 In this embodiment, the thermal binding auxiliary device includes: a positioning socket 10 and a positioning plug-in 20.
[0052] Figure 2 To locate the top view of the socket 10, combine Figure 2 In this embodiment, the positioning socket 10 includes a plurality of socket units 110 , each of which is arranged in a matrix. The socket unit 110 has a die receiving hole 111 and a slot 112 , and the slot 112 is arranged around the die receiving hole 111 .
[0053] Figure 3 To locate the top view of the plug-in 20, combine Figure 3 In this embodiment, the positioning plug-in 20 includes a plurality of plug-in units 210, each plug-in unit 210 is arranged in a matrix, and the plug-in unit 210 corresponds to the socket unit 110 one by one, and the plug-in unit 210 has a solder pad accommodating hole 211, and the plug-in unit 210 is inserted into the corresponding slot 112 so that the solder pad accommodating hole 211 is opposite to the corresponding chip accommodating hole 111.
[0054] The thermal binding auxiliary device provided in the embodiment of the present disclosure is used to assist the thermal binding between the wafer 100 and the circuit substrate 200. The thermal binding auxiliary device includes a positioning socket 10 and a positioning plug-in 20. The positioning socket 10 is arranged on the side of the wafer 100 with the grain 1100, and the positioning plug-in 20 is arranged on the side of the circuit substrate 200 with the pad 2100. The positioning socket 10 includes a plurality of socket units 110, each of which has a grain accommodating hole 111 and a slot 112, and the grain accommodating hole 111 is used to accommodate the grain 1100 on the wafer 100. The positioning plug-in 20 includes a plurality of plug-in units 210, each of which has a pad accommodating hole 211, and the pad accommodating hole 211 is used to accommodate the pad 2100 on the circuit substrate 200. When positioning and docking the wafer 100 and the circuit substrate 200, the positioning socket 10 and the positioning plug-in 20 move toward each other together with the wafer 100 and the circuit substrate 200, and the plug-in unit 210 will be inserted into the corresponding slot 112, so that the pad accommodating hole 211 is opposite to the corresponding grain accommodating hole 111, thereby making the pad 2100 and the grain 1100 opposite to each other, thereby ensuring the accuracy of positioning and docking.
[0055] That is to say, the thermal binding auxiliary device provided by the embodiment of the present disclosure can effectively ensure the positioning and docking accuracy between the pad 2100 and the die 1100, thereby improving the yield and efficiency of thermal binding.
[0056] Continue to see Figure 1 In the present embodiment, the grain accommodating hole 111 includes a first end and a second end. The first end and the second end of the grain accommodating hole 111 are respectively opposite ends of the grain accommodating hole 111 in the axial direction, and the port orientation of the first end of the grain accommodating hole 111 is consistent with the notch orientation of the slot 112. The size of the first end of the grain accommodating hole 111 is greater than the size of the second end of the grain accommodating hole 111.
[0057] In the above implementation, the first end and the second end of the grain accommodating hole 111 are the two opposite ends of the grain accommodating hole 111 in the axial direction. Since the size of the first end of the grain accommodating hole 111 is larger than the size of the second end, the inner wall of the first end of the grain accommodating hole 111 will be away from the grain 1100, effectively avoiding the interference of the socket unit 110 on the grain 1100 when the grain 1100 is positioned and docked. In addition, since the inner wall of the first end of the grain accommodating hole 111 is away from the grain 1100, there is a certain space between the inner wall of the grain accommodating hole 111 and the grain 1100, which can accommodate the melted metal electrode solder, thereby avoiding the melted metal electrode solder from flowing to other adjacent grains 1100, causing unnecessary parallel connection.
[0058] In addition, the second end of the die accommodating hole 111 is smaller in size, which means that the size of the socket unit 110 at this part is larger, thereby ensuring the connection reliability between the socket unit 110 and the wafer 100 .
[0059] It is worth noting that, in the present embodiment, the size of the grain accommodating hole 111 is determined according to the shape of the cross section of the grain accommodating hole 111 (the cross section perpendicular to the axis of the grain accommodating hole 111). For example, if the cross section of the grain accommodating hole 111 is circular, the size of the grain accommodating hole 111 refers to the inner diameter of the grain accommodating hole 111. If the cross section of the grain accommodating hole 111 is rectangular, the size of the grain accommodating hole 111 refers to the diagonal length of the grain accommodating hole 111. Accordingly, the size of the first end of the grain accommodating hole 111 corresponds to the cross section at the first end of the grain accommodating hole 111, and the size of the second end of the grain accommodating hole 111 corresponds to the cross section at the second end of the grain accommodating hole 111.
[0060] Of course, in other embodiments, the size of the die receiving hole 111 can also be directly the area of the inner contour. Accordingly, the size of the first end of the die receiving hole 111 is the inner contour area of the cross section at the first end of the die receiving hole 111, and the size of the second end of the die receiving hole 111 is the inner contour area of the cross section at the second end of the die receiving hole 111. The present disclosure is not limited to this.
[0061] Exemplarily, in a direction from the first end to the second end of the die receiving hole 111 , the size of the die receiving hole 111 gradually decreases.
[0062] In the above implementation, the size of the die accommodating hole 111 is gradually changed, which can reduce the difficulty of preparing the die accommodating hole 111 on the one hand, and ensure the structural stability of the socket unit 110 on the other hand.
[0063] Exemplarily, the first end dimension of the die receiving hole 111 is the maximum dimension of the die receiving hole 111 in the axial direction, and the second end dimension of the die receiving hole 111 is the minimum dimension of the die receiving hole 111 in the axial direction.
[0064] In this embodiment, the inner wall of the die receiving hole 111 is in a concave arc shape.
[0065] In the above implementation, the inner wall of the accommodating hole is designed to be an inwardly concave arc, so that the size of the grain accommodating hole 111 decreases exponentially in the direction from the first end to the second end of the grain accommodating hole 111. In this way, the internal space of the grain accommodating hole 111 is increased as much as possible, which is beneficial for the grain accommodating hole 111 to accommodate the grain 1100 on the one hand, and also beneficial for the grain accommodating hole 111 to accommodate the melted metal electrode solder on the other hand.
[0066] In this embodiment, the depth of the slot 112 is greater than the height of the plug-in unit 210 , and the height of the plug-in unit 210 is the dimension of the plug-in unit 210 in its own plugging direction.
[0067] In the above implementation, the depth of the slot 112, that is, the dimension of the slot 112 in its own extension direction, corresponds in direction to the height of the plug-in unit 210. Since the depth of the slot 112 is greater than the height of the plug-in unit 210, the slot 112 provides sufficient insertion travel for the plug-in unit 210, so that when the plug-in unit 210 is inserted into the slot 112, the plug-in unit 210 will not interfere with the bottom of the slot 112. In this way, when the plug-in unit 210 is inserted into the slot 112, the socket unit 110 can abut against the circuit substrate 200, thereby playing a role in supporting the circuit substrate 200.
[0068] Exemplarily, the depth of the slot 112 is at least 1 μm greater than the height of the plug-in unit 210 .
[0069] In the above implementation, when the plug-in unit 210 is inserted into the slot 112 , the distance between the plug-in unit 210 and the bottom of the slot 112 is at least 1 μm, thereby effectively ensuring that the plug-in unit 210 will not interfere with the bottom of the slot 112 .
[0070] Of course, the depth of the slot 112 should not be too much greater than the height of the plug-in unit 210, otherwise it will easily lead to insufficient insertion depth of the plug-in unit 210 in the slot 112, affecting the insertion stability between the plug-in unit 210 and the slot 112 unit.
[0071] See again Figure 2 and Figure 3 In this embodiment, the cross section of the slot 112 is a rectangular frame, and the cross section of the plug-in unit 210 is a rectangular frame.
[0072] The shape of the die 1100 is usually rectangular, so correspondingly, the shape of the pad 2100 is also usually rectangular. In this way, the cross section of the die receiving hole 111 is rectangular, which can facilitate the receiving of the die 1100, the cross section of the slot 112 is a rectangular frame, which can facilitate the surrounding of the die receiving hole 111, the cross section of the pad receiving hole 211 is rectangular, which can facilitate the receiving of the pad 2100, and the cross section of the plug-in unit 210 is a rectangular frame, which can be matched and plugged into the slot 112, so that the plug-in unit 210 and the socket unit 110 are firmly assembled together.
[0073] Figure 4 A flowchart of a hot binding method provided in an embodiment of the present disclosure, combined with Figure 4In this embodiment, the thermal binding method is applied to Figure 1 The thermal binding auxiliary device shown, the thermal binding method includes:
[0074] Step 401 : Prepare a first positioning film layer on a side of the wafer 100 to be transferred having the die 1100 .
[0075] Exemplarily, a photosensitive adhesive is coated on a side of the wafer 100 to be transferred having the die 1100 to form a first positioning film layer.
[0076] Step 402: Patterning the first positioning film layer to form a positioning socket 10 (see Figure 5 ).
[0077] Exemplarily, the first positioning film layer is prepared into the positioning plug 20 through a yellow light process.
[0078] In the above implementation, the yellow light process includes an exposure process, a development process, an etching process (dry etching), a de-gumming process, and the like.
[0079] It is worth noting that the arrangement of the socket units 110 is related to the patterning result, and can be designed according to actual needs, such as a matrix arrangement, etc., and the present disclosure does not limit this. In addition, the shape of the socket units 110 is also related to the patterning result, and can be designed according to actual needs, such as a rectangular frame, etc., and the present disclosure does not limit this.
[0080] Exemplarily, the height of the positioning socket 10 is 1-2 μm smaller than the thickness of the die 1100 .
[0081] If the height of the positioning socket 10 is greater than the thickness of the die 1100, the positioning socket 10 will abut against the circuit substrate 200, and the die 1100 will not be able to fully contact the pad 2100 on the circuit substrate 200, resulting in poor bonding or even no bonding. Designing the dimensional relationship between the height of the positioning socket 10 and the thickness of the die 1100 within the above range can not only avoid the above problems, but also enable the positioning socket 10 to support the circuit substrate 200 after the metal electrode solder between the pad 2100 and the die 1100 melts.
[0082] Step 403 : preparing a second positioning film layer on the side of the circuit substrate 200 having the pad 2100 .
[0083] Exemplarily, a photosensitive adhesive is coated on one side of the circuit substrate 200 having the pad 2100 to form a second positioning film layer.
[0084] Step 404: Pattern the second positioning film layer to form a positioning plug 20 (see Figure 6 ).
[0085] Exemplarily, the second positioning film layer is prepared into the positioning plug 20 through a yellow light process.
[0086] In the above implementation, the yellow light process includes an exposure process, a development process, an etching process (dry etching), a de-gumming process, and the like.
[0087] It is worth noting that the arrangement of the plug-in unit 210 is related to the patterning result, and can be designed according to actual needs, such as a matrix arrangement, etc., and the present disclosure does not limit this. In addition, the shape of the plug-in unit 210 is also related to the patterning result, and can be designed according to actual needs, such as a rectangular frame, etc., and the present disclosure does not limit this.
[0088] Step 405: Place the circuit substrate 200 and the wafer 100 to be transferred relative to each other, and insert the plug-in unit 210 of the positioning plug-in 20 into the slot 112 of the corresponding positioning socket 10, so that the pad 2100 and the corresponding die 1100 are attached to each other (see Figure 7 ).
[0089] Since a positioning socket 10 is provided on one side of the wafer 100 to be transferred and a positioning plug-in 20 is provided on one side of the circuit substrate 200, when the wafer 100 and the circuit substrate 200 are positioned and docked, the positioning socket 10 and the positioning plug-in 20 move toward each other together with the wafer 100 and the circuit substrate 200, and the plug-in unit 210 will be inserted into the corresponding slot 112, so that the pad accommodating hole 211 is opposite to the corresponding grain accommodating hole 111, so that the pad 2100 and the grain 1100 are opposite, thereby ensuring the accuracy of positioning and docking.
[0090] That is to say, by providing the positioning socket 10 and the positioning plug-in 20 , the positioning and docking accuracy between the pad 2100 and the die 1100 can be effectively guaranteed, thereby improving the yield and efficiency of thermal binding.
[0091] Step 406: Raise the temperature to bond the pad 2100 and the die 1100 together (see Figure 8 ).
[0092] Since there is a certain space between the inner wall of the grain accommodating hole 111 and the grain 1100 , the space can accommodate the melted metal electrode solder, thereby preventing the melted metal electrode solder from flowing to other adjacent grains 1100 and causing unnecessary parallel connection.
[0093] In some examples, the die 1100 has a metal electrode solder of one of Au and Sn, and the pad 2100 has the other metal electrode solder of Au and Sn, and a stable AuSn alloy can be formed after bonding. After the temperature is increased, the metal electrode solder between the pad 2100 and the die 1100 melts, so that the positioning socket 10 and the circuit substrate 200 move toward each other until the positioning socket 10 and the circuit substrate 200 abut against each other.
[0094] In this way, the positioning socket 10 can be against the circuit substrate 200, thereby playing the role of supporting the circuit substrate 200. Under the support of the positioning socket 10, a greater bonding pressure can be applied during the bonding process to form an alloy, thereby preventing the circuit substrate 200 from warping and causing insufficient contact force in some areas. At the same time, the pressure on each grain 1100 can be basically the same, and there will be no cold solder joints caused by solder outflow or insufficient solder joints caused by insufficient pressure, thereby ensuring the quality of soldering.
[0095] In some other examples, the die 1100 has one metal electrode solder of Au and In, and the pad 2100 has another metal electrode solder of Au and In, which can form a stable AuIn alloy after bonding.
[0096] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by persons of ordinary skill in the field to which the present disclosure belongs. The words "first", "second", "third" and similar words used in the patent application specification and claims of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "one" do not indicate a quantity limitation, but indicate the existence of at least one. Words such as "include" or "comprise" and similar words mean that the elements or objects appearing before "include" or "comprise" include the elements or objects listed after "include" or "comprise" and their equivalents, and do not exclude other elements or objects. Words such as "connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
[0097] The above description is only an optional embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.
Claims
1. A thermal binding auxiliary device, characterized in that: include: A positioning socket (10) and a positioning plug-in (20); The positioning socket (10) comprises a plurality of socket units (110), each of the socket units (110) being arranged in a matrix, the socket units (110) having a die accommodating hole (111) and a slot (112), the slot (112) being arranged around the die accommodating hole (111); The positioning plug-in unit (20) comprises a plurality of plug-in units (210), each of the plug-in units (210) being arranged in a matrix, and the plug-in units (210) corresponding to the socket units (110) one by one, the plug-in units (210) having solder pad accommodating holes (211), and the plug-in units (210) being inserted into the corresponding slots (112) so that the solder pad accommodating holes (211) are opposite to the corresponding die accommodating holes (111).
2. The thermal binding auxiliary device according to claim 1, characterized in that: The grain accommodating hole (111) comprises a first end and a second end, the first end and the second end of the grain accommodating hole (111) are respectively opposite ends of the grain accommodating hole (111) in the axial direction, and the port orientation of the first end of the grain accommodating hole (111) is consistent with the notch orientation of the slot (112), and the size of the first end of the grain accommodating hole (111) is larger than the size of the second end of the grain accommodating hole (111).
3. The thermal binding auxiliary device according to claim 2, characterized in that: In the direction from the first end to the second end of the crystal grain accommodating hole (111), the size of the crystal grain accommodating hole (111) gradually decreases.
4. The thermal binding auxiliary device according to claim 2, characterized in that: The inner wall of the crystal grain accommodating hole (111) is in a concave arc shape.
5. The thermal binding auxiliary device according to claim 1, characterized in that: The cross section of the slot (112) is a rectangular frame, and the cross section of the plug-in unit (210) is a rectangular frame.
6. The thermal binding auxiliary device according to claim 1, characterized in that: The depth of the slot (112) is greater than the height of the plug-in unit (210), and the height of the plug-in unit (210) is the dimension of the plug-in unit (210) in its own plug-in direction.
7. The thermal binding auxiliary device according to claim 6, characterized in that: The depth of the slot (112) is at least 1 μm greater than the height of the plug-in unit (210).
8. A thermal binding method, characterized in that: Applicable to the thermal binding auxiliary device of claim 1, the thermal binding method comprises: Preparing a first positioning film layer on a side of the wafer (100) to be transferred having the grains (1100); Patterning the first positioning film layer to form a positioning socket (10); A second positioning film layer is prepared on one side of the circuit substrate (200) having the pad (2100); Patterning the second positioning film layer to form a positioning plug-in (20); The circuit substrate (200) and the wafer (100) to be transferred are placed in relative positions, and the plug-in unit (210) of the positioning plug-in (20) is plugged into the corresponding slot (112) of the positioning socket (10), so that the pad (2100) and the corresponding die (1100) are attached to each other; The temperature is increased so that the pad (2100) and the die (1100) are bonded together.
9. The thermal binding method according to claim 8, characterized in that: The first positioning film layer is patterned to form a positioning socket (10), comprising: The height of the positioning socket (10) is 1 to 2 μm less than the thickness of the crystal grain (1100).
10. The thermal binding method according to claim 8, characterized in that: After increasing the temperature, the thermal binding method further comprises: The metal electrode solder between the solder pad (2100) and the crystal grain (1100) melts, causing the positioning socket (10) and the circuit substrate (200) to move toward each other until the positioning socket (10) and the circuit substrate (200) abut against each other.