Self-adaptive driving control method suitable for H-bridge circuit

Abstract

The invention relates to a self-adaptive driving control method suitable for an H-bridge circuit. The method comprises the following steps: firstly, performing turn-off driving, and loading a target turn-off driving signal to a gate end of a target turn-off power tube based on turn-off information of the current target turn-off power tube so as to drive the target turn-off power tube to be gradually turned off based on the target turn-off driving signal; and when the turn-off information of the target turn-off power tube is at least in a pre-turn-off state, performing turn-on driving on a target turn-on power tube in the target turn-on bridge circuit tube group, and loading a target turn-on driving signal to the gate end of the current target turn-on power tube based on the turn-on state of the current target turn-on power tube so as to turn off the target turn-off power tube. And driving the current target conduction power tube to be gradually conducted based on the target conduction driving signal. Soft switching of the power tube in the H-bridge circuit is controlled, the working efficiency of the H-bridge circuit is improved, meanwhile, self-excitation resonance of the H-bridge circuit is prevented, and the dead time can change along with changes of external application conditions.

Description

Technical Field

[0001] The invention relates to a drive control method, in particular to an adaptive drive control method suitable for an H-bridge circuit. Background Art

[0002] H-bridge circuits are widely used in fields such as motor drive control. H-bridge circuits generally include several power tubes. By controlling the switching sequence and time of the power tubes in the H-bridge circuit, the speed and direction of the motor connected to the H-bridge circuit can be controlled. Generally, an H-bridge circuit generally includes at least two bridge arms, each of which includes a high-side power tube and a low-side power tube.

[0003] When the high-side power tube and the low-side power tube in the H-bridge circuit are driven and switched, due to the influence of parasitic capacitance, the switching of the high-side power tube / low-side power tube cannot be completed instantly, and there will be a certain delay, such as the high-side power tube slowly turns on and the low-side power tube slowly turns off. At this time, for the same bridge arm, the high-side power tube and the low-side power tube will be turned on at the same time. Although the simultaneous conduction time is short, due to the extremely small on-resistance of the power tube, a huge current will be generated, causing serious heating of the power tube and loss, which may even cause damage to the power tube in severe cases.

[0004] When designing a circuit, it is usually necessary to avoid the high-side power tube and the low-side power tube of the same bridge arm being turned on at the same time. Generally, a dead time can be added when the high-side power tube and the low-side power tube are switched, so that the low-side power tube is completely turned off before the high-side power tube is turned on, so as to avoid the problem of excessive current at the moment of switching.

[0005] At present, when driving and controlling the H-bridge circuit, a fixed dead time is mostly used. Specifically, a period of time is usually inserted between the corresponding gate control signals of the high-side power tube and the low-side power tube to ensure that the high-side power tube and the low-side power tube in the same bridge arm are alternately turned on to ensure the reliability of the H-bridge circuit. Since the ideal dead time will change with the changes in load conditions and input voltage levels, and the dead time required at different operating frequencies is also different, the traditional fixed dead time method cannot guarantee the universality under different usage conditions. Summary of the invention

[0006] The purpose of the present invention is to overcome the deficiencies in the prior art and provide an adaptive drive control method suitable for an H-bridge circuit, which controls the soft switching of a power tube in the H-bridge circuit, improves the working efficiency of the H-bridge circuit, and prevents the H-bridge circuit from self-resonating. The dead time can change with changes in external application conditions.

[0007] According to the technical solution provided by the present invention, an adaptive drive control method suitable for an H-bridge circuit is used to switch and control the working states of two bridge power tube groups in the H-bridge circuit, wherein any bridge power tube group includes a high-side power tube located in one bridge arm of the H-bridge circuit and a low-side power tube located in the other bridge arm of the H-bridge circuit;

[0008] For the H-bridge circuit, the bridge power tube group to be switched to the working state is used as the target on-bridge tube group, and the other bridge power tube group in the H-bridge circuit is used as the target off-bridge tube group.

[0009] When the H-bridge circuit is adaptively driven and controlled, the high-side power tube and the low-side power tube in the target on-bridge tube group are driven to the on state, and the high-side power tube and the low-side power tube in the target off-bridge tube group are driven to the off state, wherein the adaptive drive control method includes:

[0010] First, the high-side power tube and the low-side power tube in the target shutdown bridge tube group are driven to shut down, wherein, when any target shutdown power tube in the target shutdown bridge tube group is driven to shut down, the gate terminal voltage of the current target shutdown power tube is obtained, and the obtained gate terminal voltage is compared with a preset drive control reference voltage to determine the shutdown information of the current target shutdown power tube, and the target shutdown power tube is the high-side power tube or the low-side power tube in the target shutdown bridge tube group;

[0011] Based on the shutdown information of the current target shutdown power tube, a target shutdown drive signal in an approximately linear state is loaded to the gate end of the target shutdown power tube, so as to drive the target shutdown power tube to be gradually shut down based on the target shutdown drive signal until the target shutdown power tube is in a completely shut-down state;

[0012] The shutdown information of the target shutdown power tube includes at least a pre-shutdown state and a full shutdown state, wherein the target on-power tube in the target on-bridge tube group is driven to be on only when the shutdown information of the target shutdown power tube is at least the pre-shutdown state, and the target on-power tube and the target off-power tube are located on the same side bridge arm in the H-bridge circuit;

[0013] When the target conduction power tube is driven to conduct, the gate terminal voltage of the current target conduction power tube is obtained, and the obtained gate terminal voltage is compared with the preset drive control reference voltage of the target conduction power tube to determine the conduction state of the current target conduction power tube;

[0014] Based on the conduction state of the current target conduction power tube, a target conduction drive signal in an approximately linear state is loaded to the gate end of the current target conduction power tube, so as to drive the current target conduction power tube to gradually turn on based on the target conduction drive signal until the current target conduction power is in a fully conduction state.

[0015] When the same high-side power tube or low-side power tube is used as the target off-power tube and the target on-power tube respectively, the preset drive control reference voltage used by the target off-power tube is the same as the drive control reference voltage used by the target on-power tube;

[0016] In an H-bridge circuit, when the high-side power tube and the low-side power tube of the same bridge arm use different types of power tubes, the drive control reference voltage used by the high-side power tube is different from the drive control reference voltage used by the low-side power tube located in the same bridge arm.

[0017] Any driving control reference voltage includes at least a pre-control reference voltage and a plurality of driving acceleration reference voltages;

[0018] When adaptive driving control is performed on the target turn-off power tube and the target turn-on power tube located in the same side bridge arm, the following is obtained:

[0019] When driving the target shutdown power tube to shut down, before the gate terminal voltage of the target shutdown power tube matches the corresponding pre-control reference voltage, a target shutdown driving signal for accelerating the shutdown of the target shutdown power tube is generated based on the gate terminal voltage of the target shutdown power tube and the corresponding driving acceleration reference voltage, so as to drive the target shutdown power tube to shut down under the target shutdown driving signal until the gate terminal voltage of the target shutdown power tube matches the pre-control reference voltage;

[0020] After the gate terminal voltage of the target shutdown power tube matches the corresponding pre-control reference voltage, a corresponding target shutdown drive signal is generated based on the gate terminal voltage of the target shutdown power tube and the corresponding pre-control reference voltage to drive the target shutdown power tube under the current target shutdown drive signal until it is in a completely shutdown state, wherein,

[0021] After the gate terminal voltage of the target shutdown power tube matches the corresponding pre-control reference voltage, a power tube shutdown feedback signal in a valid state is generated, so as to indicate that the target shutdown power tube is in a pre-shutdown state based on the power tube feedback signal;

[0022] Based on the power tube shutdown feedback signal in the effective state, the target conduction power tube is driven to conduction based on the target drive conduction signal until the target conduction power tube is in a fully conduction state, wherein when the target conduction power tube is driven to conduction, the target drive conduction signal at least includes a target drive conduction first state signal, a target drive second state signal and a target conduction drive third state signal;

[0023] When the gate terminal voltage of the target on-power tube does not match the pre-control reference voltage, the target on-power tube is driven to be on with a target drive on first state signal;

[0024] When the gate terminal voltage of the target on-power tube matches the pre-control reference voltage, the target on-power tube is driven to conduction by a target drive second state signal, wherein the target drive second state signal is generated based on the gate terminal voltage of the target on-power tube and the drive acceleration reference signal;

[0025] When the gate terminal voltage of the target conduction power tube matches the driving acceleration driving signal as the accelerated cutoff, the target conduction power tube is driven to conduct with the target driving third state signal until the target conduction power tube is in a fully conducted state, wherein,

[0026] The driving capability of the target driving third state signal is the same as the driving capability of the target driving first state signal, and the driving capability of the target driving third state signal is smaller than the driving capability of the target driving second state signal.

[0027] Each bridge arm of the H-bridge circuit is configured with a corresponding bridge arm power tube driving circuit, so as to drive and control the high-side power tube and the low-side power tube in the connected bridge arm by using the bridge arm power tube driving circuit, wherein:

[0028] When the H-bridge circuit is adaptively driven and controlled, a valid on-control signal and a valid off-control signal are loaded to the bridge arm power tube driving circuit based on the target on-power tube and the target off-power tube.

[0029] The bridge arm power tube driving circuit first drives the target shutdown power tube to shut down under the shutdown control signal in the effective state.

[0030] When the gate voltage of the target shutdown power tube matches the pre-control reference voltage used by the target shutdown power tube, the bridge arm driving power tube circuit will turn on the target turn-on power tube belonging to the same side bridge arm under the conduction control signal in the effective state.

[0031] The bridge arm power tube driving circuit includes a high-side power tube driving circuit for driving and controlling the high-side power tube and a low-side power tube driving circuit for driving and controlling the low-side power tube, wherein:

[0032] When the high-side power tube is used as the target on-power tube, the low-side power tube belonging to the same side bridge arm is used as the target off-power tube. At this time, a conduction control signal in a valid state is loaded to the high-side power tube driving circuit, and a shutdown control signal in a valid state is loaded to the low-side power tube driving circuit;

[0033] Based on the shutdown control signal in an effective state, the low-side power tube driving circuit first drives the low-side power tube to shut down. When the gate terminal voltage of the low-side power tube matches the pre-control reference voltage used by the low-side power tube, the low-side power tube driving circuit loads the power tube shutdown feedback signal in an effective state to the high-side power tube driving circuit. Thereafter, under the power tube shutdown feedback signal in an effective state and the conduction control signal, the high-side power tube driving circuit loads the target conduction drive signal to the gate terminal of the high-side power tube to conduction drive the high-side power tube.

[0034] When the low-side power tube is used as the target on-power tube, the high-side power tube belonging to the same side bridge arm is used as the target off-power tube. At this time, a conduction control signal in a valid state is loaded to the low-side power tube driving circuit, and a shutdown control signal in a valid state is loaded to the high-side power tube driving circuit;

[0035] Based on the shutdown control signal in the effective state, the high-side power tube driving circuit first drives the high-side power tube to shut down. When the gate terminal voltage of the high-side power tube matches the pre-control reference voltage used by the high-side power tube, the high-side power tube driving circuit loads the power tube shutdown feedback signal in the effective state to the low-side power tube driving circuit. Thereafter, under the power tube shutdown feedback signal and the conduction control signal in the effective state, the low-side power tube driving circuit loads the target conduction drive signal to the gate terminal of the low-side power tube to conduct the low-side power tube.

[0036] The low-side power tube driving circuit includes a low-side gate voltage detection circuit and a low-side control driving signal generating circuit connected in sequence, wherein:

[0037] The low-side gate voltage detection circuit is used to compare the gate terminal voltage of the low-side power tube with the driving control reference voltage used by the low-side power tube to generate a low-side pre-control comparison signal and a plurality of low-side driving acceleration comparison signals, wherein the low-side pre-control comparison signal and all the low-side driving acceleration comparison signals are loaded into the low-side control driving signal generating circuit, and the low-side pre-control comparison signal is also loaded into the high-side power tube driving circuit.

[0038] Based on the low-side pre-control comparison signal, all low-side drive acceleration comparison signals, the low-side control signal and the high-side pre-control comparison signal loaded by the high-side power tube drive circuit, the low-side control drive signal generation circuit generates a corresponding low-side control drive signal, wherein,

[0039] The low-side control signal is an on-control signal in a valid state or an off-control signal in a valid state;

[0040] When the low-side control signal is a shutdown control signal in an effective state, when the gate terminal voltage of the low-side power tube matches the pre-control reference voltage, a power tube shutdown feedback signal in an effective state is formed based on the current low-side pre-control comparison signal, and a low-side shutdown drive signal for shutting down the low-side power tube is formed based on the low-side control drive signal;

[0041] When the low-side control signal is a conduction control signal in a valid state, a low-side conduction drive signal for conducting and driving the low-side power tube is formed based on the low-side control drive signal;

[0042] When at least one low-side driving acceleration comparison signal is in an effective state, the low-side control driving signal generating circuit generates a low-side control driving signal for accelerating the control driving of the low-side power tube.

[0043] The low-side control drive signal generating circuit comprises a low-side control circuit and a low-side control drive circuit, wherein:

[0044] The low-side control circuit is connected to the low-side gate voltage detection circuit and the low-side control drive circuit, and the low-side control drive circuit is connected to the gate terminal of the low-side power tube;

[0045] The low-side control circuit generates a low-side drive selection control signal based on the low-side pre-control comparison signal, all low-side drive acceleration comparison signals, the low-side control signal, and the high-side pre-control comparison signal loaded by the high-side power tube drive circuit;

[0046] Based on the low-side drive selection control signal, the low-side control drive circuit generates a low-side control drive signal of corresponding drive capability, and loads the low-side control drive signal to the gate terminal of the low-side power tube.

[0047] The low-side control driving circuit comprises a low-side driving basic branch and a plurality of low-side driving acceleration branches connected in parallel with the low-side driving basic branch, wherein:

[0048] The number of low-side driving acceleration branches is not less than the number of driving acceleration reference voltages;

[0049] When at least one low-side drive acceleration comparison signal is in a valid state, the low-side control drive circuit generates a corresponding low-side control drive signal based on the low-side drive basic branch and the corresponding low-side drive acceleration branch; otherwise, the low-side control drive circuit generates a corresponding low-side control drive signal based on the low-side drive basic branch.

[0050] The low-side driving basic branch includes a low-side basic branch pull-up portion and a low-side basic branch pull-down portion, and any low-side driving acceleration branch includes a low-side acceleration branch pull-up portion and a low-side acceleration branch pull-down portion, wherein,

[0051] The low-side basic branch pull-up portion or the low-side basic branch pull-down portion is selected to be in a working state through the low-side drive selection control signal to form a low-side basic branch drive portion.

[0052] When at least one driving acceleration comparison signal is in a valid state, the low-side acceleration branch pull-up part or the low-side acceleration branch pull-down part of the corresponding low-side driving acceleration branch is used as the low-side acceleration branch driving part, so as to utilize the low-side acceleration branch driving part and the low-side basic branch driving part to jointly drive and control the low-side power tube.

[0053] The low-side acceleration branch pull-up portion includes a low-side acceleration branch pull-up current source, and the low-side acceleration branch pull-down portion includes a low-side acceleration branch pull-down current source, wherein:

[0054] When the low-side acceleration branch pull-up portion or the low-side acceleration branch pull-down portion is configured as the low-side acceleration branch driving portion, the corresponding low-side acceleration branch pull-up current source and the low-side acceleration branch pull-down current source are used to accelerate the driving control of the low-side power tube;

[0055] The low-side control driving circuit is also adaptively connected to a low-side current regulating circuit for current regulation, so as to utilize the low-side current regulating circuit to regulate the low-side control driving signal loaded to the gate terminal of the low-side power tube.

[0056] The present invention has the advantages that when the target shutdown power tube is driven to shut down, the gate terminal voltage of the target shutdown power tube is compared with the driving control reference voltage to determine the shutdown state of the target shutdown power tube, and based on the gate terminal voltage of the target shutdown power tube and the current shutdown state of the target shutdown power tube, the target shutdown driving signal loaded to the target shutdown power tube is adjusted so that the target shutdown driving signal can be in an approximately linear state, so as to perform soft shutdown on the target shutdown power tube;

[0057] For the target on-power tube belonging to the same side bridge arm, after the target off-power tube is in the pre-off state, when the target on-power tube is driven to be on, the gate terminal voltage of the target on-power tube is compared with the drive control reference voltage to determine the on-state of the target on-power tube, and based on the gate terminal voltage of the target on-power tube and the current on-state of the target on-power tube, the target on-drive signal loaded to the target on-power tube is adjusted so that the target on-drive signal can be in an approximately linear state, so as to perform soft on-state on the target on-power tube;

[0058] The driving control of the H-bridge circuit can realize adaptive adjustment of the dead time of the H-bridge circuit, reduce the loss caused by the traditional fixed dead time, and enable the dead time of the power tube in the H-bridge circuit to be automatically adjusted to achieve better driving performance under different load currents and different operating frequencies. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] Figure 1 It is a structural block diagram of an embodiment of the present invention in which the bridge arm power tube driving circuit is connected and coordinated with the H-bridge circuit.

[0060] Figure 2 The figure is a schematic diagram of an embodiment of a low-side power tube driving circuit of the present invention.

[0061] Figure 3 The figure is a circuit diagram of an embodiment of a high-side current regulating circuit of the present invention.

[0062] Figure 4 The schematic diagram of a circuit of a pull-up signal generating unit of a low-side basic branch according to an embodiment of the present invention.

[0063] Figure 5 This is a circuit schematic diagram of an embodiment of the first generating unit of the pull-up signal of the low-side acceleration branch of the present invention.

[0064] Figure 6 This is a circuit diagram of an embodiment of the second generating unit of the pull-up signal of the low-side acceleration branch of the present invention.

[0065] Figure 7 The schematic diagram of a circuit of a low-side basic branch pull-down signal generating unit according to an embodiment of the present invention.

[0066] Figure 8 This is a circuit schematic diagram of an embodiment of the first generating unit of the low-side acceleration branch pull-down signal of the present invention.

[0067] Fig. 9 This is a circuit schematic diagram of an embodiment of the second generating unit of the low-side acceleration branch pull-down signal of the present invention.

[0068] Fig.10 The schematic circuit diagram of an embodiment of the high-side basic branch pull-up signal generating unit of the present invention is shown in FIG.

[0069] Fig.11 This is a circuit schematic diagram of an embodiment of the first generating unit of the pull-up signal of the high-side acceleration branch of the present invention.

[0070] Fig.12 A schematic diagram of an embodiment of a high-side power tube driving circuit of the present invention.

[0071] Fig.13 This is a circuit schematic diagram of an embodiment of the second generating unit of the pull-up signal of the high-side acceleration branch of the present invention.

[0072] Fig.14 The schematic diagram of a circuit of a high-side basic branch pull-down signal generating unit according to an embodiment of the present invention.

[0073] Fig.15This is a circuit schematic diagram of an embodiment of the first generating unit of the high-side acceleration branch pull-down signal of the present invention.

[0074] Fig.16 This is a circuit schematic diagram of an embodiment of the second generating unit of the high-side acceleration branch pull-down signal of the present invention.

[0075] Fig.17 This is a timing diagram of an embodiment of the present invention for driving and controlling a low-side power tube.

[0076] Fig.18 It is a schematic diagram of an embodiment of the present invention with different load currents and dead time.

[0077] Explanation of the accompanying drawings: 1-first bridge arm power tube driving circuit, 2-second bridge arm power tube driving circuit, 3-low-side gate voltage detection circuit, 4-low-side control circuit, 5-low-side driving circuit, 6-low-side current regulation circuit, 7-high-side gate voltage detection circuit, 8-high-side control circuit, 9-high-side driving circuit, 10-high-side current regulation circuit, 11-low-side voltage comparator, 12-low-side pull-up control unit, 13-low-side pull-down control unit, 14-high-side voltage comparator, 15-high-side pull-up control unit, 16-high-side pull-down control unit. DETAILED DESCRIPTION

[0078] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0079] In order to control the soft switch of the power tube in the H-bridge circuit, improve the working efficiency of the H-bridge circuit, and prevent the H-bridge circuit from self-resonating, the present invention provides an adaptive drive control method suitable for the H-bridge circuit, specifically, for switching and controlling the working states of two bridge power tube groups in the H-bridge circuit, wherein any bridge power tube group includes a high-side power tube located in one bridge arm of the H-bridge circuit and a low-side power tube located in the other bridge arm of the H-bridge circuit;

[0080] For the H-bridge circuit, the bridge power tube group to be switched to the working state is used as the target on-bridge tube group, and the other bridge power tube group in the H-bridge circuit is used as the target off-bridge tube group.

[0081] When the H-bridge circuit is adaptively driven and controlled, the high-side power tube and the low-side power tube in the target on-bridge tube group are driven to the on state, and the high-side power tube and the low-side power tube in the target off-bridge tube group are driven to the off state, wherein the adaptive drive control method includes:

[0082] First, the high-side power tube and the low-side power tube in the target shutdown bridge tube group are driven to shut down, wherein, when any target shutdown power tube in the target shutdown bridge tube group is driven to shut down, the gate terminal voltage of the current target shutdown power tube is obtained, and the obtained gate terminal voltage is compared with a preset drive control reference voltage to determine the shutdown information of the current target shutdown power tube, and the target shutdown power tube is the high-side power tube or the low-side power tube in the target shutdown bridge tube group;

[0083] Based on the shutdown information of the current target shutdown power tube, a target shutdown drive signal in an approximately linear state is loaded to the gate end of the target shutdown power tube, so as to drive the target shutdown power tube to be gradually shut down based on the target shutdown drive signal until the target shutdown power tube is in a completely shut-down state;

[0084] The shutdown information of the target shutdown power tube includes at least a pre-shutdown state and a full shutdown state, wherein the target on-power tube in the target on-bridge tube group is driven to be on only when the shutdown information of the target shutdown power tube is at least the pre-shutdown state, and the target on-power tube and the target off-power tube are located on the same side bridge arm in the H-bridge circuit;

[0085] When the target conduction power tube is driven to conduct, the gate terminal voltage of the current target conduction power tube is obtained, and the obtained gate terminal voltage is compared with the preset drive control reference voltage of the target conduction power tube to determine the conduction state of the current target conduction power tube;

[0086] Based on the conduction state of the current target conduction power tube, a target conduction drive signal in an approximately linear state is loaded to the gate end of the current target conduction power tube, so as to drive the current target conduction power tube to gradually turn on based on the target conduction drive signal until the current target conduction power is in a fully conduction state.

[0087] Generally, an H-bridge circuit includes at least two bridge arms, and each bridge arm includes at least a high-side power tube and a low-side power tube. The high-side power tube and the low-side power tube can be different types of power tubes or the same type of power tubes, such as a PMOS tube and an NMOS tube. The high-side power tube and the low-side power tube on the same side of the bridge arm can form a bridge arm output end on one side after being adapted and connected. Similarly, the high-side power tube and the low-side power tube on the other side of the bridge arm can form the other side of the bridge arm output end after being adapted and connected. The H-bridge circuit can be electrically connected to the load through the two side bridge arm output ends to control the operation of the load.

[0088] Figure 1, an embodiment in which the high-side power tube and the low-side power tube in the H-bridge circuit use different types of power tubes is shown. In the figure, the H-bridge circuit includes two bridge arms. In the figure, the PMOS tube PM1 and the NMOS tube NM1 are located in the bridge arm on the same side, and the PMOS tube PM2 and the NMOS tube NM2 are located in the bridge arm on the same side. The PMOS tube PM1 and the PMOS tube PM2 are respectively high-side power tubes, and the NMOS tube NM1 and the NMOS tube NM2 are respectively low-side power tubes. Specifically, the drain end of the PMOS tube PM1 and the drain end of the NMOS tube NM2 are connected to each other to form a side bridge arm output end OUT1, and the drain end of the PMOS tube PM2 and the drain end of the NMOS tube NM2 are connected to each other to form a side bridge arm output end OUT2. Figure 1 In the figure, M is the motor as the load. In addition, the source terminal of the PMOS tube PM1 and the source terminal of the PMOS tube PM2 are both connected to the power supply VSS, and the source terminal of the NMOS tube NM1 and the source terminal of the NMOS tube NM2 are both grounded.

[0089] right Figure 1 In the illustrated embodiment, the forward and reverse switching control of the motor can be realized. At this time, the PMOS tube PM1 and the NMOS tube NM2 need to work together, and the PMOS tube PM2 and the NMOS tube NM1 need to work together. When the forward and reverse switching control of the motor is performed, the power tubes working together should be turned on or off at the same time, such as the PMOS tube PM1 and the NMOS tube NM2 should be turned on or off at the same time, and the PMOS tube PM2 and the NMOS tube NM1 should be turned on or off at the same time. Take the switching of the motor from reverse to forward as an example: when the motor is reversed, the NMOS tube NM1 and the PMOS tube PM2 are turned on at the same time. When the motor is forward, the PMOS tube PM1 and the NMOS tube NM2 should be turned on at the same time, and the NMOS tube NM1 and the PMOS tube PM2 should be turned off at the same time.

[0090] It can be seen from the above description that when the present invention performs adaptive control on the H-bridge circuit, the working states of the two bridge power tube groups in the H-bridge circuit are mainly switched and controlled, that is, the power tubes in one H-bridge circuit can form two bridge power tube groups. Generally, one bridge power tube group includes a high-side power tube located in one bridge arm of the H-bridge circuit and a low-side power tube located in the other bridge arm of the H-bridge circuit, such as Figure 1 As described above, the PMOS transistor PM1 and the NMOS transistor NN2 form a bridge power transistor group, and the NMOS transistor NM1 and the PMOS transistor PM2 form another bridge power transistor group.

[0091] For the working status of the two bridge power tube groups, if one bridge power tube group is currently in the on working state and the other bridge power tube group is currently in the off non-working state, when the working state is switched, the bridge power tube group currently in the on working state needs to be switched to the off non-working state, and the bridge power tube group currently in the off non-working state needs to be switched to the on working state.

[0092] In specific implementation, when switching control is performed, it is necessary to determine the target on-bridge tube group and the target off-bridge tube group, wherein the target on-bridge tube group is the bridge power tube group that needs to be switched to the on working state, and the target off-bridge tube group is the bridge power tube group that needs to be switched to the off non-working state. Specifically, according to the state of the load, the target on-bridge tube group and the target off-bridge tube group can be determined by the commonly used technical means in the technical field. It can be seen from the above description that when the H-bridge circuit is adaptively driven and controlled, the high-side power tube and the low-side power tube in the target on-bridge tube group should be driven to the on state, and at the same time, the high-side power tube and the low-side power tube in the target off-bridge tube group should be driven to the off state.

[0093] In order to ensure the safety of the H-bridge single circuit, when the H-bridge circuit is adaptively controlled, the high-side power tube and the low-side power tube in the target shutdown bridge tube group should be shut down first. At this time, the high-side power tube and the low-side power tube in the target shutdown bridge tube group form the target shutdown power tube. Specifically, when each target shutdown power tube is shut down, the gate terminal voltage of the current target shutdown power tube should be obtained. If the target shutdown power tube is a high-side power tube, the gate terminal voltage of the high-side power tube should be obtained. If the target shutdown power tube is a low-side power tube, the gate terminal voltage of the low-side power tube should be obtained. For each target shutdown power tube, after obtaining the gate terminal voltage of the target shutdown power tube, the gate terminal voltage should be compared with the preset drive control reference voltage to determine the shutdown information of the current target shutdown power tube. It should be noted that the preset drive control reference voltage of the high-side power tube may be different from the preset drive control reference voltage of the low-side power tube.

[0094] By comparing the gate terminal voltage with the preset drive control voltage, the shutdown information of the target shutdown power tube can be determined, wherein the shutdown information specifically refers to the current shutdown state of the target shutdown power tube. Generally, the shutdown information may at least include a pre-shutdown state and a full shutdown state. For example, when the target shutdown power tube is a low-side power tube and the low-side power tube adopts an NMOS tube, the pre-shutdown state specifically refers to that the gate terminal voltage of the target shutdown power tube is lower than the threshold voltage of the target power tube. The full shutdown state generally refers to that the gate terminal voltage of the low-side power tube is 0V or near 0V, which is based on the situation that the low-side power tube can be completely shut down. When the target shutdown power tube is a high-side power tube, the shutdown information can refer to the corresponding description here and will not be repeated here.

[0095] In one embodiment of the present invention, when the target shutdown power tube is driven to shut down, the target shutdown drive signal loaded to the gate end of the target shutdown power tube should be adapted to the shutdown state of the target shutdown power tube. Specifically, a target shutdown drive signal in an approximately linear state can be loaded to the gate end of the target shutdown power tube to drive the target shutdown power tube to be gradually shut down based on the target shutdown drive signal until the target shutdown power tube is in a completely shutdown state.

[0096] Specifically, the target shutdown driving signal is in an approximately linear state, which specifically means that the target shutdown driving signal is in a straight line or an approximately straight line state. Fig.17 , when the target shutdown power tube is a low-side power tube and the low-side power tube is an NMOS tube, an embodiment of the target shutdown drive signal being in an approximately linear state is shown. The manner in which the target shutdown drive signal in an approximately linear state is loaded to the gate end of the target shutdown power tube will be specifically illustrated below. It can be understood that the soft shutdown of the target shutdown power tube can be achieved by the target shutdown drive signal in an approximately linear state.

[0097] It can be seen from the above description that when the target shutdown bridge tube group is driven and controlled, the two target shutdown power tubes in the target shutdown front rod group are driven and controlled at the same time. At this time, according to the shutdown information of each target shutdown power tube, a corresponding and approximately linear target shutdown drive signal is loaded to the gate end of each target shutdown power tube. Since the two target shutdown power tubes in the target shutdown bridge tube group are respectively formed by a high-side power tube and a low-side power tube, the shutdown information of each target shutdown power tube and the corresponding target shutdown drive signal should be different, and the specific should be based on the power tube that can adapt to the corresponding type.

[0098] As can be seen from the background technology, the high-side power tube and the low-side power tube of the same side bridge arm in the H-bridge circuit should not be turned on at the same time. Therefore, in order to avoid the high-side power tube and the low-side power tube of the same side bridge arm being turned on at the same time, in one embodiment of the present invention, when the target off-power tube is at least in the pre-off state, the target on-power tube belonging to the same side bridge arm is turned on and driven, such as Figure 1 In the embodiment shown in FIG, when the PMOS tube PM1 is used as the target shutdown power tube, the NMOS tube NM1 used as the target turn-on power tube will be turned on only when the PMOS tube PM1 is at least in the pre-shutdown state. At this time, the dead time can be adaptively adjusted, and the PMOS tube PM1 and the NMOS tube NM1 can be prevented from being in the on state at the same time.

[0099] During specific implementation, for the target on-state power tube that needs to be driven to be turned on, it is also necessary to obtain the gate terminal voltage of the target on-state power tube during the on-state driving, and compare the gate terminal voltage with the preset drive control reference voltage of the target on-state power tube to determine the on-state of the target on-state power tube; wherein, the target on-state power tube that needs to be driven to be turned on specifically refers to a power tube that belongs to the same side bridge arm as the target on-state power tube and the target off-state power tube is at least in the pre-off state; the on-state of the target on-state power tube specifically refers to the on-state of the target on-state power tube.

[0100] It should be noted that in an H-bridge circuit, when the high-side power tube and the low-side power tube of the same side bridge arm use different types of power tubes, the drive control reference voltage used by the high-side power tube should be different from the drive control reference voltage used by the low-side power tube located on the same side bridge arm.

[0101] After determining the conduction state of the target conduction power tube, a target conduction drive signal in an approximately linear state can be loaded to the gate end of the current target conduction power tube based on the conduction state of the current target conduction power tube, so as to drive the current target conduction power tube to be gradually turned on based on the target conduction drive signal until the current target conduction power is in a fully turned-on state, thereby achieving soft conduction of the target conduction power tube. Specifically, for the case where the target conduction drive signal is in an approximately linear state, reference can be made to the corresponding description of the above-mentioned target turn-off drive signal, which will not be repeated here.

[0102] From the above description, it can be seen that in the H-bridge circuit, during multiple drive controls, the same high-side power tube or low-side power tube will be used as the target off-power tube and the target on-power tube respectively, such as Figure 1 The PMOS tube PM1 in the circuit will be used as the target off-power tube in one drive control, and will be used as the target on-power tube in the next drive control. In specific implementation, when the target off-power tube and the target on-power tube correspond to the same power tube, the preset drive control reference voltage used by the target off-power tube is the same as the drive control reference voltage used by the target on-power tube.

[0103] In one embodiment of the present invention, any driving control reference voltage at least includes a pre-control reference voltage and a plurality of driving acceleration reference voltages;

[0104] When adaptive driving control is performed on the target turn-off power tube and the target turn-on power tube located in the same side bridge arm, the following is obtained:

[0105] When driving the target shutdown power tube to shut down, before the gate terminal voltage of the target shutdown power tube matches the corresponding pre-control reference voltage, a target shutdown driving signal for accelerating the shutdown of the target shutdown power tube is generated based on the gate terminal voltage of the target shutdown power tube and the corresponding driving acceleration reference voltage, so as to drive the target shutdown power tube to shut down under the target shutdown driving signal until the gate terminal voltage of the target shutdown power tube matches the pre-control reference voltage;

[0106] After the gate terminal voltage of the target shutdown power tube matches the corresponding pre-control reference voltage, a corresponding target shutdown drive signal is generated based on the gate terminal voltage of the target shutdown power tube and the corresponding pre-control reference voltage to drive the target shutdown power tube under the current target shutdown drive signal until it is in a completely shutdown state, wherein,

[0107] After the gate terminal voltage of the target shutdown power tube matches the corresponding pre-control reference voltage, a power tube shutdown feedback signal in a valid state is generated, so as to indicate that the target shutdown power tube is in a pre-shutdown state based on the power tube feedback signal;

[0108] Based on the power tube shutdown feedback signal in the effective state, the target conduction power tube is driven to conduction based on the target drive conduction signal until the target conduction power tube is in a fully conduction state, wherein when the target conduction power tube is driven to conduction, the target drive conduction signal at least includes a target drive conduction first state signal, a target drive second state signal and a target conduction drive third state signal;

[0109] When the gate terminal voltage of the target on-power tube does not match the pre-control reference voltage, the target on-power tube is driven to be on with a target drive on first state signal;

[0110] When the gate terminal voltage of the target on-power tube matches the pre-control reference voltage, the target on-power tube is driven to conduction by a target drive second state signal, wherein the target drive second state signal is generated based on the gate terminal voltage of the target on-power tube and the drive acceleration reference signal;

[0111] When the gate terminal voltage of the target conduction power tube matches the driving acceleration driving signal as the accelerated cutoff, the target conduction power tube is driven to conduct with the target driving third state signal until the target conduction power tube is in a fully conducted state, wherein,

[0112] The driving capability of the target driving third state signal is the same as the driving capability of the target driving first state signal, and the driving capability of the target driving third state signal is smaller than the driving capability of the target driving second state signal.

[0113] In a specific implementation, the drive control reference voltage may include at least one pre-control reference voltage and several drive acceleration reference voltages, wherein the pre-control reference voltage is related to the threshold voltage of each high-side power tube / low-side power tube. For example, the pre-control reference voltage may be 0.4 to 0.6 times the corresponding threshold voltage of the high-side power tube / low-side power tube. For example, when the threshold voltage of the low-side power tube using an NMOS tube is 1.2V, the corresponding control reference voltage may be 0.48V to 0.72V. Therefore, when forming a target turn-on power tube / target turn-off power tube, the corresponding pre-control reference voltage of the target turn-on power tube / target turn-off power tube may be determined accordingly.

[0114] The number of driving acceleration reference voltages in the driving control reference voltage and the specific value can be selected according to actual needs, specifically based on the ability to accelerate the shutdown drive of the target shutdown power tube and accelerate the conduction drive of the target conduction power tube. The case of the driving acceleration reference voltage will be illustrated below. It should be noted that the corresponding settings of the pre-control reference voltage and the driving acceleration reference voltage should be based on the ability to meet the adaptive control of the H-bridge circuit, that is, to achieve dead zone adaptive control, reduce dead zone time, achieve soft conduction of the target conduction power tube, and soft shutdown of the target shutdown power tube.

[0115] In order to form a target shutdown drive signal in an approximately linear state, in one embodiment of the present invention, when driving the target shutdown power tube to shut down, before the gate terminal voltage of the target shutdown power tube matches the corresponding pre-control reference voltage, a corresponding target shutdown drive signal can be generated based on the corresponding drive acceleration reference voltage. At this time, under the action of the current target shutdown drive signal, the shutdown of the target shutdown power tube can be accelerated until the gate terminal voltage of the target shutdown power tube matches the pre-control reference voltage.

[0116] In a specific implementation, the gate terminal voltage matches the pre-control reference voltage, which specifically means that the gate terminal voltage is consistent with the pre-control reference voltage, or the difference between the gate terminal voltage and the pre-control reference voltage is within an allowable numerical range, and the allowable numerical range can be selected according to actual needs. It can be seen that the gate terminal voltage does not match the corresponding pre-control reference voltage, which specifically means that the gate terminal voltage is not equal to the pre-control reference voltage, or the difference between the two exceeds the allowable numerical range. The matching situations in the present invention all express the same meaning, and can all refer to the description here.

[0117] When the gate terminal voltage of the target shutdown power tube matches the corresponding pre-control reference voltage, a corresponding target shutdown drive signal is generated based on the gate terminal voltage of the target shutdown power tube and the corresponding pre-control reference voltage, wherein the case of generating the target shutdown drive signal based on the gate terminal voltage and the pre-control reference voltage will be described in detail below. Thereafter, the target shutdown power tube is driven under the current target shutdown drive signal until it is in a completely shut-down state.

[0118] In addition, after the gate terminal voltage of the target shutdown power tube matches the corresponding pre-control reference voltage, it can be determined that the target shutdown power tube is in the pre-shutdown state, and at the same time, a power tube shutdown feedback signal in an effective state is generated, so that the target on power tube belonging to the same side bridge arm is turned on based on the power tube shutdown feedback signal in an effective state. When the target shutdown power tube is completely turned off, it can be determined that the target shutdown power tube is in a completely off state.

[0119] It should be noted that when the target shutdown power tube is driven to shut down, before the gate terminal voltage matches the pre-control reference voltage, the shutdown drive of the target shutdown power tube is accelerated based on the driving acceleration reference voltage. After the gate terminal voltage matches the pre-control reference voltage, the corresponding target shutdown drive signal is generated only under the gate terminal voltage and the pre-control reference voltage. At this time, the above-mentioned target shutdown drive signal in the approximate linear state can be formed.

[0120] It can be seen from the above description that only when the gate terminal voltage of the target off power tube matches the corresponding pre-control reference voltage and a power tube off feedback signal in an effective state is generated, the target on power tube belonging to the same side bridge arm will be turned on and driven. When the target on power tube is turned on and driven, in order to form a target on drive signal in an approximately linear state, the target drive on signal at least includes a target drive on first state signal, a target drive second state signal and a target on drive third state signal, wherein the driving capability of the target drive third state signal is the same as the driving capability of the target drive first state signal, and the driving capability of the target drive third state signal is less than the driving capability of the target drive second state signal, that is, the target drive second state signal can speed up the on drive of the target on power tube, and the target drive on first state signal, the target drive second state signal and the target on drive third state signal can be described by the following corresponding examples.

[0121] In one embodiment of the present invention, a corresponding bridge arm power tube driving circuit is configured for each bridge arm of the H-bridge circuit, so that the bridge arm power tube driving circuit is used to drive and control the high-side power tube and the low-side power tube in the connected bridge arm, wherein:

[0122] When the H-bridge circuit is adaptively driven and controlled, a valid on-control signal and a valid off-control signal are loaded to the bridge arm power tube driving circuit based on the target on-power tube and the target off-power tube.

[0123] The bridge arm power tube driving circuit first drives the target shutdown power tube to shut down under the shutdown control signal in the effective state.

[0124] When the gate voltage of the target shutdown power tube matches the pre-control reference voltage used by the target shutdown power tube, the bridge arm driving power tube circuit will turn on the target turn-on power tube belonging to the same side bridge arm under the conduction control signal in the effective state.

[0125] In order to realize adaptive drive control of the H-bridge circuit, a corresponding bridge arm power tube drive circuit should be set for each bridge arm of the H-bridge circuit. Figure 1 An embodiment of an H-bridge circuit and two bridge arm power tube driving circuits are adaptively connected. In the figure, the two bridge arm power tube driving circuits are respectively a first bridge arm power tube driving circuit 1 and a second bridge arm power tube driving circuit 2. The first bridge arm power tube driving circuit 1 and the second bridge arm power tube driving circuit 2 can generally adopt the same form. The first bridge arm power tube driving circuit 1 and the second bridge arm power tube driving circuit 2 are independent of each other. Among them, the first bridge arm power tube driving circuit 1 is adaptively connected to the left bridge arm of the H-bridge circuit, and the second bridge arm power tube driving circuit 2 is adaptively connected to the right bridge arm of the H-bridge circuit. At this time, the first bridge arm power tube driving circuit 1 can be used to perform corresponding drive control on the PMOS tube PM1 and the NMOS tube NM1 in the H-bridge circuit, and the second bridge arm power tube driving circuit 2 can be used to perform corresponding drive control on the PMOS tube PM2 and the NMOS tube NM2 in the H-bridge circuit.

[0126] In specific implementation, when performing adaptive control, a conduction control signal in a valid state and a shutdown control signal in a valid state should be loaded to each bridge arm power tube driving circuit. For example, when the first bridge arm power tube driving circuit 1 is used to drive and control the PMOS tube PM1 and the NMOS tube NM1, a conduction control signal in a valid state and a shutdown control signal in a valid state should be loaded into the bridge arm power tube driving circuit 1. The conduction control signal and the shutdown control signal are in a valid state, which specifically means that the corresponding level state meets the preset driving control purpose. For example, when the conduction control signal is in a valid state, the corresponding high-side power tube or low-side power tube should be turned on.

[0127] It should be noted that the effective on-control signal and the effective off-control signal should correspond to the on- and off-purposes of the power tube in the bridge arm corresponding to the bridge arm power tube driving circuit. Figure 1 In the embodiment shown in , when the on-control signal in the effective state corresponds to the PMOS tube PM1, the off-control signal in the effective state should correspond to the NMOS tube NM1. At this time, the PMOS tube PM1 can be driven on, and the NMOS tube NM1 can be driven off. At this time, the PMOS tube PM1 serves as the target on-power tube, and the NMOS tube NM1 serves as the target off-power tube. For other corresponding situations, please refer to the description here.

[0128] It can be seen from the above description that when the NMOS tube NM1 is the target off-power tube, the PMOS tube PM1 should be the target on-power tube; when the PMOS tube PM1 is driven to be on, the NMOS tube NM1 should be driven to be off first. When the gate terminal voltage of the NMOS tube NM1 matches the control reference voltage of the NMOS tube NM1, a power tube off feedback signal in a valid state is generated. At the same time, the PMOS tube NM1 can be driven to be on only under the on-control signal in a valid state.

[0129] In one embodiment of the present invention, the bridge arm power tube driving circuit includes a high-side power tube driving circuit for driving and controlling the high-side power tube and a low-side power tube driving circuit for driving and controlling the low-side power tube, wherein:

[0130] When the high-side power tube is used as the target on-power tube, the low-side power tube belonging to the same side bridge arm is used as the target off-power tube. At this time, a conduction control signal in a valid state is loaded to the high-side power tube driving circuit, and a shutdown control signal in a valid state is loaded to the low-side power tube driving circuit;

[0131] Based on the shutdown control signal in an effective state, the low-side power tube driving circuit first drives the low-side power tube to shut down. When the gate terminal voltage of the low-side power tube matches the pre-control reference voltage used by the low-side power tube, the low-side power tube driving circuit loads the power tube shutdown feedback signal in an effective state to the high-side power tube driving circuit. Thereafter, under the power tube shutdown feedback signal in an effective state and the conduction control signal, the high-side power tube driving circuit loads the target conduction drive signal to the gate terminal of the high-side power tube to conduction drive the high-side power tube.

[0132] When the low-side power tube is used as the target on-power tube, the high-side power tube belonging to the same side bridge arm is used as the target off-power tube. At this time, a conduction control signal in a valid state is loaded to the low-side power tube driving circuit, and a shutdown control signal in a valid state is loaded to the high-side power tube driving circuit;

[0133] Based on the shutdown control signal in the effective state, the high-side power tube driving circuit first drives the high-side power tube to shut down. When the gate terminal voltage of the high-side power tube matches the pre-control reference voltage used by the high-side power tube, the high-side power tube driving circuit loads the power tube shutdown feedback signal in the effective state to the low-side power tube driving circuit. Thereafter, under the power tube shutdown feedback signal and the conduction control signal in the effective state, the low-side power tube driving circuit loads the target conduction drive signal to the gate terminal of the low-side power tube to conduct the low-side power tube.

[0134] It can be seen from the above description that a bridge arm power tube driving circuit is correspondingly connected to one side of the bridge arm of the H-bridge circuit, and one side of the bridge arm of each H-bridge circuit will include a high-side power tube and a low-side power tube at the same time. Therefore, in order to be able to drive and control the high-side power tube and the low-side power tube, the bridge arm power tube driving circuit should include a high-side power tube driving circuit and a low-side power tube driving circuit. At this time, the high-side power tube driving circuit is adaptively connected to the gate end of the high-side power tube in the connected side bridge arm, and the low-side power tube driving circuit is adaptively connected to the gate end of the low-side power tube in the connected side bridge arm.

[0135] Generally, an external controller can load a high-side control signal to the high-side power tube drive circuit and a low-side control signal to the low-side power tube drive circuit, wherein the high-side control signal and the low-side control signal can be digital signals. For example, when the low-side control signal is at a high level, the low-side control signal can be recognized as a conduction control signal in a valid state; when the low-side control signal is at a low level, the low-side control signal can be considered as a shutdown control signal in a valid state; similarly, based on the level state of the high-side control signal, a conduction control signal in a valid state or a shutdown control signal in a valid state corresponding to the high-side power tube can be generated.

[0136] It should be noted that when the target on-power tube is driven to be on, the on-control signal always remains in a valid state until the target on-power tube becomes the target off-power tube. If the low-side power tube is used as the target on-power tube, the low-side control signal should be high and maintained until the low-side power tube is turned off. Then the low-side control signal should be changed to a low level and maintained until the low-side power tube is driven to be on again.

[0137] The specific manner and process of driving and controlling the high-side power tube by the high-side power tube driving circuit and driving and controlling the low-side power tube by the low-side power tube driving circuit are described in detail below.

[0138] In one embodiment of the present invention, the low-side power tube driving circuit includes a low-side gate voltage detection circuit 3 and a low-side control driving signal generating circuit connected in sequence, wherein:

[0139] The low-side gate voltage detection circuit 3 is used to compare the gate terminal voltage of the low-side power tube with the driving control reference voltage used by the low-side power tube to generate a low-side pre-control comparison signal and a plurality of low-side driving acceleration comparison signals, wherein the low-side pre-control comparison signal and all the low-side driving acceleration comparison signals are loaded into the low-side control driving signal generating circuit, and the low-side pre-control comparison signal is also loaded into the high-side power tube driving circuit.

[0140] Based on the low-side pre-control comparison signal, all low-side drive acceleration comparison signals, the low-side control signal and the high-side pre-control comparison signal loaded by the high-side power tube drive circuit, the low-side control drive signal generation circuit generates a corresponding low-side control drive signal, wherein,

[0141] The low-side control signal is an on-control signal in a valid state or an off-control signal in a valid state;

[0142] When the low-side control signal is a shutdown control signal in an effective state, when the gate terminal voltage of the low-side power tube matches the pre-control reference voltage, a power tube shutdown feedback signal in an effective state is formed based on the current low-side pre-control comparison signal, and a low-side shutdown drive signal for shutting down the low-side power tube is formed based on the low-side control drive signal;

[0143] When the low-side control signal is a conduction control signal in a valid state, a low-side conduction drive signal for conducting and driving the low-side power tube is formed based on the low-side control drive signal;

[0144] When at least one low-side driving acceleration comparison signal is in an effective state, the low-side control driving signal generating circuit generates a low-side control driving signal for accelerating the control driving of the low-side power tube.

[0145] Figure 1 An embodiment of a low-side power tube driving circuit is shown in the figure. In the figure, the low-side power tube driving circuit at least includes a low-side gate voltage detection circuit 3 and a low-side control drive signal generating circuit, wherein the low-side gate voltage detection circuit 3 is connected to the gate terminal of the low-side power tube so as to obtain the gate terminal voltage of the low-side power terminal. Thereafter, the gate terminal voltage of the low-side power tube is compared with the drive control reference voltage. It can be seen from the above description that the drive control reference voltage may include a pre-control reference voltage and several drive acceleration reference voltages. When performing voltage comparison, the gate terminal voltage is compared with the pre-control reference voltage and the drive acceleration reference voltage at the same time, wherein after the gate terminal voltage is compared with the pre-control reference voltage, a corresponding low-side pre-control comparison signal can be generated, and after the gate terminal voltage is compared with the drive acceleration reference voltage, a corresponding low-side drive acceleration comparison signal can be generated.

[0146] It should be noted that the low-side pre-control comparison signal can represent the magnitude relationship between the gate terminal voltage and the pre-control reference voltage. The low-side pre-control comparison signal is generally a digital signal. If the gate terminal voltage is greater than the pre-control reference voltage, the low-side pre-control comparison signal can be a high level, otherwise, the low-side pre-control comparison signal is a low level signal; similarly, the low-side drive acceleration comparison signal can represent the magnitude between the gate terminal voltage and the corresponding drive acceleration reference voltage. The situation of the low-side drive acceleration comparison signal can refer to the description of the low-side pre-control comparison signal. It can be seen from the above description that the pre-control reference voltage and the drive acceleration reference voltage here are related to the low-side power tube. Therefore, according to the low-side pre-control comparison signal and the low-side drive acceleration comparison signal, the on state or off state of the current low-side power tube can be determined.

[0147] During specific implementation, the low-side gate voltage detection circuit 3 will simultaneously output a low-side pre-control comparison signal and a plurality of low-side drive acceleration comparison signals. When the gate terminal voltage of the low-side power tube is different, the corresponding level states of the low-side pre-control comparison signal and the low-side drive acceleration comparison signal are different, thereby determining whether the low-side pre-control comparison signal and the low-side drive acceleration comparison signal are in a valid state, wherein the low-side pre-control comparison signal and the low-side drive acceleration comparison signal at a high level can be regarded as a valid state, and correspondingly, the low-level state is regarded as an invalid state. Specifically, the low-side gate voltage detection circuit 3 will load the low-side pre-control comparison signal and all the low-side drive acceleration comparison signals to the low-side control drive signal generation circuit.

[0148] In addition, the low-side gate voltage detection circuit 3 also loads the low-side pre-control comparison signal to the high-side power tube drive circuit. Figure 2 An embodiment of the low-side gate voltage detection circuit 3 is shown in the figure. In the figure, the low-side gate voltage detection circuit 3 at least includes a low-side voltage comparator 11. The low-side voltage comparator 11 can be used to compare the pre-control reference voltage and the low-side drive acceleration comparison signal with the gate terminal voltage of the low-side power tube. In the figure, V1 can be a pre-control reference voltage, V2 can be a drive acceleration reference voltage, and V3 can be another drive acceleration reference voltage. Figure 2 AO2 is the gate voltage of the low-side power tube.

[0149] It can be understood that the voltage values ​​corresponding to the driving acceleration reference voltage V2 and the driving acceleration reference voltage V3 should be different. Therefore, Figure 2 An embodiment in which the driving control reference voltage includes a pre-control reference voltage and two driving acceleration reference voltages is shown in FIG. In a specific implementation, the driving acceleration reference voltage V2 may be 1.5 to 2 times the threshold voltage of the low-side power tube, and the driving acceleration reference voltage V3 may be 0.7 to 0.8 times the operating voltage of the low-side power tube. Figure 2The operating voltage of the low-side power tube can be provided by the power supply VSS, and the operating voltage provided by the power supply VSS can be 5V.

[0150] Figure 2 In the illustrated embodiment, the low-side voltage comparator 11 has at least three output terminals, so as to respectively output corresponding low-side pre-control comparison signals and two low-side drive acceleration comparison signals using the three output terminals. Figure 2 In the figure, C1 can be a low-side prediction control comparison signal, C2 can be a low-side drive acceleration comparison signal, and C3 can be another low-side drive acceleration comparison signal, wherein the low-side drive acceleration comparison signal C2 represents the comparison state between the gate terminal voltage of the low-side power tube and the drive acceleration reference voltage V2, and the low-side drive acceleration comparison signal C3 represents the comparison state between the gate terminal voltage of the low-side power tube and the drive acceleration reference voltage V3.

[0151] In specific implementation, the three output ends of the low-side voltage comparator 11 are all connected to the low-side control drive signal generating circuit, so that the low-side pre-control comparison signal C1, the low-side drive acceleration comparison signal C2, and the low-side drive acceleration comparison signal C3 are simultaneously loaded to the low-side control drive signal generating circuit. At the same time, the output end of the low-side voltage comparator 11 outputting the low-side pre-control comparison signal C1 is also connected to the high-side power tube driving circuit, so that the low-side prediction control comparison signal C1 is simultaneously loaded to the high-side power tube driving circuit, that is, the high-side power tube driving circuit will always receive the low-side pre-control comparison signal C1, but when the low-side and control comparison signal C1 is at a high level, the high-side power tube driving circuit can determine that the low-side power tube is at least in a pre-shutdown state. In addition, the low-side voltage comparator 11 can adopt an existing commonly used form, specifically based on the ability to achieve the above-mentioned voltage comparison.

[0152] The low-side control drive signal generating circuit, in addition to receiving the above-mentioned low-side prediction control comparison signal C1, low-side drive acceleration comparison signal C2, and low-side drive acceleration comparison signal C3, also includes a low-side control signal and a high-side pre-control comparison signal loaded by the high-side power tube drive circuit. It can be seen from the above description that the low-side control signal can be loaded externally, and the low-side control signal can be a conduction control signal in an effective state or a shutdown control signal in an effective state. The high-side pre-control comparison signal can be generated in the same way as the low-side pre-control comparison signal C1, that is, in the high-side power tube drive circuit, it is generated based on the comparison between the gate terminal voltage of the high-side power tube and the pre-control reference voltage of the high-side power tube. The specific method of generating the public test pre-control comparison signal can refer to the corresponding description of the above-mentioned low-side pre-control comparison signal.

[0153] The low-side control drive signal generating circuit is connected to the gate terminal of the low-side power tube, and can generate a corresponding low-side control drive signal, and load the generated low-side control drive signal to the gate terminal of the low-side power tube. The type of the low-side control drive signal is generally related to the type of the low-side control signal. For example, when the low-side control signal is a shutdown control signal in an effective state, the low-side power tube is configured as a target shutdown power tube, and at this time, the low-side shutdown drive signal is the above-mentioned target shutdown drive signal; when the low-side control signal is a conduction control signal in an effective state, at this time, the low-side power tube is configured as a target conduction power tube, and the low-side conduction drive signal is the above-mentioned target conduction drive signal.

[0154] Further, when the low-side control signal is a shutdown control signal in a valid state, and the gate terminal voltage of the low-side power tube matches the pre-control reference voltage, a power tube shutdown feedback signal in a valid state is formed based on the current low-side pre-control comparison signal, that is, at this time, the level state of the low-side pre-control comparison signal C1 is a valid level state. It can be seen from the above description that at this time, the level state of the low-side pre-control comparison signal can be changed from a low level to a high level, and then the power tube shutdown feedback signal is also in a high level state.

[0155] It should be noted that when the low-side drive acceleration comparison signal is in an effective state, it means that the low-side drive acceleration comparison signal is in an effective level state. For example, when the high level state is an effective level state, the low-side drive acceleration comparison signal is in an effective state. When the low-side drive acceleration comparison signal is in an effective state, the low-side drive acceleration comparison signal is in a high level state. Figure 2 In the embodiment shown in , both the low-side drive acceleration comparison signal C2 and the low-side drive acceleration comparison signal C3 can be high level valid. When the low-side drive acceleration comparison signal C2 is in a valid state, the gate terminal voltage of the low-side power tube is greater than the drive acceleration reference voltage V2. Similarly, when the low-side drive acceleration comparison signal C3 is in a valid state, the gate terminal voltage of the low-side power tube is greater than the drive acceleration reference voltage V3.

[0156] In one embodiment of the present invention, when at least one low-side drive acceleration comparison signal is in a valid state, the low-side control drive signal generating circuit generates a low-side control drive signal that can be used to accelerate the control drive of the low-side power tube, that is, at this time the low-side control drive signal can accelerate the conduction or shutdown of the low-side power tube. The specific method of accelerating the drive control of the low-side power tube will be illustrated below.

[0157] In one embodiment of the present invention, the low-side control drive signal generating circuit includes a low-side control circuit 4 and a low-side control drive circuit 5, wherein:

[0158] The low-side control circuit 4 is connected to the low-side gate voltage detection circuit 3 and the low-side control drive circuit 5, and the low-side control drive circuit 5 is connected to the gate terminal of the low-side power tube;

[0159] The low-side control circuit 4 generates a low-side drive selection control signal based on the low-side pre-control comparison signal, all low-side drive acceleration comparison signals, the low-side control signal, and the high-side pre-control comparison signal loaded by the high-side power tube drive circuit;

[0160] Based on the low-side drive selection control signal, the low-side control drive circuit 5 generates a low-side control drive signal of corresponding drive capability, and loads the low-side control drive signal to the gate terminal of the low-side power tube.

[0161] Figure 1 An embodiment of a low-side control drive signal generating circuit consisting of a low-side control circuit 4 and a low-side control drive circuit 5 is shown. At this time, the low-side pre-control comparison signal, all low-side drive acceleration comparison signals, the low-side control signal and the high-side pre-control comparison signal loaded by the high-side power tube drive circuit are loaded into the low-side control circuit 4, and a low-side drive selection control signal is generated; based on the low-side drive selection control signal, the low-side control drive circuit 5 generates a corresponding low-side control drive signal.

[0162] In one embodiment of the present invention, the low-side control driving circuit 5 includes a low-side driving basic branch and a plurality of low-side driving acceleration branches connected in parallel with the low-side driving basic branch, wherein:

[0163] The number of low-side driving acceleration branches is not less than the number of driving acceleration reference voltages;

[0164] When at least one low-side drive acceleration comparison signal is in a valid state, the low-side control drive circuit 5 generates a corresponding low-side control drive signal based on the low-side drive basic branch and the corresponding low-side drive acceleration branch; otherwise, the low-side control drive circuit generates a corresponding low-side control drive signal based on the low-side drive basic branch.

[0165] Specifically, the number of low-side drive acceleration branches is generally consistent with the number of drive acceleration reference voltages, such as Figure 2 It is shown in the figure that when the drive control reference voltage includes two drive acceleration reference voltages, the low-side control drive circuit 5 should include at least two low-side drive acceleration branches, and the low-side drive acceleration branch and the low-side drive basic branch are connected in parallel with each other. Under normal circumstances, at least the low-side drive basic branch can be used to drive and control the low-side power tube. When at least one low-side drive acceleration comparison signal is in a valid state, based on the low-side drive basic branch and the corresponding low-side drive acceleration branch, the low-side control drive circuit 5 generates a corresponding low-side control drive signal.

[0166] Since the number of low-side drive acceleration branches is consistent with the number of drive acceleration reference voltages, when at least one low-side drive acceleration comparison signal is in a valid state, the corresponding low-side drive acceleration branch can be selected through the low-side control branch 4, and the selected low-side drive acceleration branch can jointly drive and control the low-side power tube with the low-side drive basic branch, that is, the corresponding working state of the low-side drive acceleration branch should be selected and controlled based on the level state of the low-side drive acceleration comparison signal.

[0167] It can be understood that when there is a low-side drive acceleration branch that is selected to be in a working state, the driving capability of the low-side power tube can be improved. For example, when the low-side power tube is driven to be turned off, the shutdown of the low-side power tube can be accelerated; and when the low-side power tube is driven to be turned on, the above-mentioned target drive second state signal can be generated.

[0168] In one embodiment of the present invention, the low-side driving basic branch includes a low-side basic branch pull-up portion and a low-side basic branch pull-down portion, and any low-side driving acceleration branch includes a low-side acceleration branch pull-up portion and a low-side acceleration branch pull-down portion, wherein:

[0169] The low-side basic branch pull-up portion or the low-side basic branch pull-down portion is selected to be in a working state through the low-side drive selection control signal to form a low-side basic branch drive portion.

[0170] When at least one driving acceleration comparison signal is in a valid state, the low-side acceleration branch pull-up part or the low-side acceleration branch pull-down part of the corresponding low-side driving acceleration branch is used as the low-side acceleration branch driving part, so as to utilize the low-side acceleration branch driving part and the low-side basic branch driving part to jointly drive and control the low-side power tube.

[0171] It can be known from the above description that the driving control of the low-side power tube can be to drive the low-side power tube to turn on or turn off. Therefore, in order to meet the driving control purpose of the low-side power tube, the low-side driving basic branch should include a low-side basic branch pull-up part and a low-side basic branch pull-down part, wherein the gate terminal voltage of the low-side power tube can be pulled up by the low-side basic branch pull-up part to drive the low-side power tube to turn on, and the gate terminal voltage of the low-side power tube can be pulled down by the low-side basic branch pull-down part to drive the low-side power tube to turn off. When working, the low-side basic branch pull-up part and the low-side basic branch pull-down part will not be in the working state at the same time.

[0172] It can be understood that any low-side driving acceleration branch should also include a low-side driving acceleration branch pull-up portion and a low-side driving branch pull-down portion. The corresponding working principle of the low-side driving acceleration branch can refer to the corresponding description of the low-side driving basic branch.

[0173] When the low-side power tube is driven and controlled, at least the low-side basic branch pull-up portion or the low-side basic branch pull-down portion is selected to be in a working state through the low-side drive selection control signal to form a low-side basic branch driving portion. In addition, when at least one driving acceleration comparison signal is in a valid state, the low-side acceleration branch pull-up portion or the low-side acceleration branch pull-down portion of the corresponding low-side driving acceleration branch is used as the low-side acceleration branch driving portion, so that the low-side power tube is driven and controlled by the low-side acceleration branch driving portion and the low-side basic branch driving portion, thereby accelerating the driving control of the low-side power tube.

[0174] In one embodiment of the present invention, the low-side acceleration branch pull-up portion includes a low-side acceleration branch pull-up current source, and the low-side acceleration branch pull-down portion includes a low-side acceleration branch pull-down current source, wherein:

[0175] When the low-side acceleration branch pull-up portion or the low-side acceleration branch pull-down portion is configured as the low-side acceleration branch driving portion, the corresponding low-side acceleration branch pull-up current source and the low-side acceleration branch pull-down current source are used to accelerate the driving control of the low-side power tube;

[0176] The low-side control driving circuit 5 is also adaptively connected to a low-side current regulating circuit 6 for current regulation, so as to utilize the low-side current regulating circuit 6 to regulate the low-side control driving signal loaded to the gate terminal of the low-side power tube.

[0177] It should be noted that the power tube will have a Miller platform during the switching process, that is, within a period of time, the gate voltage of the power tube does not change, and the gate voltage is a platform. In specific implementation, the pull-up part of the low-side acceleration branch and the pull-down part of the low-side acceleration branch can both use a current source method to drive and control the low-side power tube, and use a current source to charge and discharge the parasitic capacitance of the low-side power tube. The gate voltage of the low-side power tube will not change during this process due to the existence of the Miller platform. Therefore, a current source drive control method is adopted, and the parasitic capacitance of the low-side power tube is charged by the current source to reduce the Miller platform effect of the low-side power tube, so that the gate voltage loaded to the low-side power tube is approximately linear, the switching speed of the low-side power tube is increased, and the circuit efficiency is improved while preventing the circuit from self-resonance. It can be understood that the gate voltage of the low-side power tube is approximately linear, that is, the target turn-off drive signal / target turn-on drive signal loaded to the gate end of the low-side power tube is approximately linear.

[0178] In addition, in order to regulate the current, the low-side control driving circuit 5 can also be connected to the low-side current regulating circuit 6, that is, the low-side current regulating circuit 6 can be used to further realize current regulation, and the driving control of the low-side power tube can be further adjusted.

[0179] Figure 2An embodiment of a low-side control driving circuit 5 is shown in the figure. In the figure, the low-side control driving circuit 5 includes a low-side driving basic branch and two low-side driving acceleration branches. Specifically, the pull-up portion of the low-side basic branch includes a PMOS tube PM3, wherein the source terminal of the PMOS tube PM3 is connected to the power supply VSS through the resistor R1, the drain terminal of the PMOS tube PM3 is connected to the gate terminal of the low-side power tube and the pull-down portion of the low-side basic branch, and the gate terminal of the PMOS tube PM3 is connected to the low-side control circuit 4. Figure 2 In the embodiment, the gate terminal of the PMOS tube PM3 receives the pull-up control signal NUP1 output by the low-side control circuit 4. When the pull-up control signal NUP1 is at a low level, the pull-up portion of the low-side basic branch is in a working state to form a low-side basic branch driving portion. At this time, Figure 2 When the pull-up control signal NUP1 is at a high level, the pull-up portion of the low-side basic branch is in a non-working state.

[0180] The low-side basic branch pull-down portion includes an NMOS tube NM3, wherein the source terminal of the NMOS tube NM3 is grounded through a resistor R2, the drain terminal of the NMOS tube NM3 is connected to the drain terminal of the PMOS tube PM3 and the gate terminal of the low-side power tube, and the gate terminal of the NMOS tube NM3 is connected to the low-side control circuit 4. Figure 2 In the embodiment, the gate terminal of the NMOS tube NM3 receives the pull-down control signal NDW1 output by the low-side control circuit 4. When the pull-down control signal NDW1 is at a high level, the low-side basic branch pull-down portion is in a working state to form a low-side basic branch pull-down portion. At this time, Figure 2 The low-side power tube in the circuit is turned off. When the pull-down control signal NDW1 is at a low level, the pull-down part of the low-side memory branch is in a non-working state. Figure 2 The low-side power tube in the circuit is the NMOS tube NM1.

[0181] Figure 2 The pull-up portion of the low-side acceleration branch of the first low-side driving acceleration branch includes a PMOS tube PM4, the source terminal of the PMOS tube PM4 is connected to the output terminal of the pull-up current source ISET1 of the low-side acceleration branch, the drain terminal of the PMOS tube PM4 is connected to the gate terminal of the low-side power tube, and the gate terminal of the PMOS tube PM4 receives the pull-up control signal NUP2 output by the low-side control circuit 4; when the pull-up control signal NUP2 is at a low level, the current low-side acceleration branch pull-up portion is in a working state, otherwise, the current low-side acceleration branch pull-up portion is in a non-working state. It can be understood that when the current low-side acceleration branch pull-up portion is in a working state, the pull-up current can be provided by the low-side acceleration branch pull-up current source ISET1, thereby accelerating the conduction drive of the low-side power tube.

[0182] The low-side acceleration branch pull-down portion of the first low-side driving acceleration branch includes an NMOS tube NM4, wherein the source terminal of the NMOS tube NM4 is connected to the low-side acceleration branch pull-down current source ISET3, the drain terminal of the NMOS tube NM4 is connected to the drain electrode of the PMOS tube PM4 and the gate terminal of the low-side power tube, and the gate terminal of the NMOS tube NM4 receives the pull-down control signal NDW2 output by the low-side control branch 4, when the pull-down control signal NDW2 is a high level, the current low-side acceleration branch pull-down portion is in a working state, otherwise, the current low-side acceleration branch pull-down portion is in a non-working state. It can be understood that when the current low-side acceleration branch pull-down portion is in operation, the pull-down current can be provided by the low-side acceleration branch pull-down current source ISET3, thereby accelerating the shutdown drive of the low-side power tube.

[0183] Figure 2 The pull-up portion of the low-side acceleration branch of the second low-side driving acceleration branch includes a PMOS tube PM5, a source terminal of the PMOS tube PM5 is connected to the output terminal of the low-side acceleration branch pull-up current source ISET2, a drain terminal of the PMOS tube PM5 is connected to the gate terminal of the low-side power tube, and the gate terminal of the PMOS tube PM5 receives the pull-up control signal NUP3 output by the low-side control circuit 4; when the pull-up control signal NUP3 is at a low level, the current low-side acceleration branch pull-up portion is in a working state, otherwise, the current low-side acceleration branch pull-up portion is in a non-working state.

[0184] The low-side acceleration branch pull-down portion of the second low-side drive acceleration branch includes an NMOS tube NM5, wherein the source end of the NMOS tube NM5 is connected to the low-side acceleration branch pull-down current source ISET4, the drain end of the NMOS tube NM5 is connected to the drain electrode of the PMOS tube PM5 and the gate end of the low-side power tube, and the gate end of the NMOS tube NM5 receives the pull-down control signal NDW3 output by the low-side control branch 4. When the pull-down control signal NDW3 is at a high level, the current low-side acceleration branch pull-down portion is in a working state, otherwise, the current low-side acceleration branch pull-down portion is in a non-working state.

[0185] It should be noted that the pull-up part and the pull-down part of the low-side acceleration branch in the second low-side driving acceleration branch accelerate the conduction drive and shutdown drive of the low-side power tube. Please refer to the description of the first low-side driving acceleration branch, and no further details will be given here.

[0186] It can be seen from the above description that when the low-side power tube is driven to be turned on, a target drive first state signal and a target drive third state signal can be generated through the low-side basic branch pull-up portion; based on the low-side basic branch pull-up portion, and the low-side acceleration branch pull-up portion of the first low-side drive acceleration branch and / or the low-side acceleration branch pull-up portion of the second low-side drive acceleration branch, a target drive second state signal can be generated. It can be seen that the driving capability of the target drive second state signal is greater than the corresponding driving capability of the target drive first state signal and the target drive third state signal, which can also accelerate the conduction drive of the low-side power tube.

[0187] It can be seen from this that when the low-side power tube is turned on and driven, the low-side drive selection control signal loaded into the low-side control drive circuit 5 is at least the pull-up control signal NUP1; when it is necessary to accelerate the turn-on drive of the low-side power tube, it should also include the pull-up control signal NUP2 and / or the pull-up control signal NUP3.

[0188] It can be understood that when the low-side power tube needs to be driven to shut down, a corresponding target shutdown drive signal can be generated based on the low-side basic branch pull-down part. When the low-side acceleration branch pull-down part of the first low-side drive acceleration branch and / or the low-side acceleration branch pull-down part of the second low-side drive acceleration branch are selected to be in a working state, a target shutdown drive signal for accelerating the shutdown drive of the low-side power tube can be generated.

[0189] It can be seen from this that when the low-side power tube is driven to shut down, the low-side drive selection control signal loaded into the low-side control drive circuit 5 is at least the pull-down control signal NDW1; when it is necessary to accelerate the shutdown drive of the low-side power tube, it should also include the pull-down control signal NDW2 and / or the pull-down control signal NDW3.

[0190] In order to generate the required low-side drive selection control signal, Figure 2 An embodiment of the low-side control circuit 4 is shown in the figure. In the figure, the low-side control circuit 4 includes a low-side pull-up control unit 12 and a low-side pull-down control unit 13. The low-side pull-up control unit 12 can generate a low-side drive selection control signal required for turning on the low-side power tube. Figure 2 The signals loaded into the low-side pull-up control unit 12 include the high-side pre-control comparison signal B1, the low-side prediction control comparison signal C1, the low-side drive acceleration comparison signal C2, the low-side drive acceleration comparison signal C3 and the low-side control signal AIN2. The low-side pull-down unit 13 can generate the low-side drive selection control signal required for shutting down the low-side power tube. Figure 2In the embodiment, the signals loaded into the low-side pull-down control unit 13 include the low-side prediction control comparison signal C1, the low-side driving acceleration comparison signal C2, the low-side driving acceleration comparison signal C3 and the low-side control signal AIN2.

[0191] Figure 4 FIG. 2 shows an embodiment in which the low-side pull-up control unit 12 generates the pull-up control signal NUP1. In the figure, the low-side control signal AIN2 and the high-side pre-control comparison signal B1 are loaded to the two input ends of the NAND gate U2, and the pull-up control signal NUP1 can be output through the output end of the NAND gate U2.

[0192] Figure 5 An embodiment of the low-side pull-up control unit 12 generating the pull-up control signal NUP2 is shown in the figure. In the figure, the low-side control signal AIN2, the high-side pre-control comparison signal B1, the low-side prediction control comparison signal C1 and the inverted low-side drive acceleration comparison signal C3 are loaded to the corresponding output end of the NAND gate U3, and the pull-up control signal NUP2 can be output through the output end of the NAND gate U3.

[0193] Figure 6 An embodiment of the low-side pull-up control unit 12 generating the pull-up control signal NUP3 is shown in the figure. In the figure, the low-side control signal AIN2, the high-side pre-control comparison signal B1, the low-side prediction control comparison signal C1 and the inverted low-side drive acceleration comparison signal C2 are loaded to the corresponding output end of the NAND gate U4, and the pull-up control signal NUP4 can be output through the output end of the NAND gate U4.

[0194] Figure 7 FIG. 4 shows an embodiment in which the low-side pull-down unit 13 generates the pull-down control signal NDW1 . In the figure, the low-side control signal AIN2 can output the pull-down control signal NDW1 through the inverter INV1 . Figure 8 An embodiment of the low-side pull-down unit 13 generating the pull-down control signal NDW2 is shown in the figure. In the figure, the inverted low-side control signal AIN2, the low-side prediction control comparison signal C1 and the inverted low-side drive acceleration comparison signal C3 are loaded to the corresponding input terminals of the AND gate U5, and the pull-down control signal NDW2 can be output through the output terminal of the AND gate U5. Fig. 9 An embodiment of the low-side pull-down unit 13 generating the pull-down control signal NDW3 is shown in the figure. In the figure, the inverted low-side control signal AIN2, the low-side prediction control comparison signal C1 and the inverted low-side drive acceleration comparison signal C2 are loaded to the corresponding input terminals of the AND gate U6, and the pull-down control signal NDW3 can be output through the output terminal of the AND gate U6.

[0195] Combine the following Figure 2 and Fig.17The process of driving and controlling the low-side power tube (NMO tube NM1) is specifically described. Specifically,

[0196] When the low-side power tube needs to be turned on, the high-side power tube (PMOS tube PM1) belonging to the same side bridge arm needs to be turned off at the same time. At this time, the low-side power tube is used as the target turn-on power tube, and the high-side power tube of the same side bridge arm is used as the target turn-off power tube, and the low-side control signal AIN2 should be a high level in an effective state, and the high-side control signal AIN1 is also in a high level state. At this time, the high-side power tube starts to turn off under the high-side control signal AIN1. Since the low-side power tube is not turned on at this time, the gate terminal voltage AO2 of the low-side power tube is 0, and the low-side prediction control comparison signal C1, the low-side drive acceleration comparison signal C2, and the low-side drive acceleration comparison signal C3 output by the low-side voltage comparator 11 are all low levels. Figures 4 to 6 It can be seen that the pull-up control signals NUP1 to NUP3 are all at high level, and the low-side basic branch pull-up portion and all the low-side acceleration branch pull-up portions are in a non-operating state.

[0197] In the high-side power tube shutdown driving process, when the gate terminal voltage AO1 of the high-side power tube matches the pre-control reference voltage of the high-side power tube, the high-side pre-control comparison signal B1 becomes a high level. At this time, the high-side power tube driving circuit loads the power tube shutdown feedback signal in a valid state into the low-side control circuit 4. Figure 4 It can be seen that the pull-up control signal NUP1 becomes a low level, and the low-level pull-up control signal NPU1 is used to make the pull-up part of the low-side basic branch in a working state. Under the action of the power supply VSS and the resistor R1, the gate terminal voltage AO2 of the low-side power tube begins to rise. When the gate terminal voltage AO2 is less than the pre-control reference voltage V1, the low-side prediction control comparison signal C1, the low-side drive acceleration comparison signal C2, and the low-side drive acceleration comparison signal C3 are all kept at a low level, then Figure 5 and Figure 6 It can be seen that the pull-up control signal NUP2 and the pull-up control signal NUP3 are both kept at a high level, and the pull-up parts of the two low-side acceleration branches are both in a non-working state. It can be understood that at this time, a target drive first state signal can be formed.

[0198] When the gate terminal voltage AO2 of the low-side power tube rises and matches the pre-control reference voltage V1, the low-side predictive control comparison signal C1 output by the low-side voltage comparator 11 is high, while the low-side drive acceleration comparison signal C2 and the low-side drive acceleration comparison signal C3 are both kept at low levels. Figure 5 and Figure 6It can be seen that the pull-up control signal NUP2 and the pull-up control signal NUP3 both change from a high level to a low level, and the pull-up parts of the two low-side acceleration branches are in a working state, so as to accelerate the gate terminal voltage AO2 of the low-side power tube to rise rapidly under the action of the pull-up current source ISET1 of the low-side acceleration branch and the pull-up current source ISET2 of the low-side acceleration branch.

[0199] When the gate voltage AO2 of the low-side power tube rises to the driving acceleration reference voltage V2, the low-side prediction control comparison signal C1 and the low-side driving acceleration comparison signal C2 output by the low-side voltage comparator 11 are both high level, and the low-side driving acceleration comparison signal C3 is still low level. Figure 6 The pull-up control signal NUP3 changes from a low level to a high level, and the low-side acceleration branch pull-up portion where the low-side acceleration branch pull-up current source ISET2 is located switches from a working state to a non-working state.

[0200] When the gate terminal voltage AO2 of the low-side power tube rises to the driving acceleration reference voltage V3, the low-side prediction control comparison signal C1, the low-side driving acceleration comparison signal C2 and the low-side driving acceleration comparison signal C3 output by the low-side voltage comparator 11 are all high level. Figure 5 and Figure 6 It can be seen that at this time, the pull-up control signal NUP2 will change from a low level to a high level, and the pull-up control signal NUP3 will remain at a high level, then the pull-up portion of the low-side acceleration branch where the pull-up current source ISET1 of the low-side acceleration branch is located will switch from a working state to a non-working state. At this time, only the pull-up portion of the low-side basic branch is used to pull up the low-side power tube until the low-side power tube is in a fully on state.

[0201] It can be understood that before the pull-up control signal NUP2 becomes a high level, a target drive second state signal for driving the low-side power tube can be formed. After the pull-up control signal NUP2 becomes a high level, a target drive third state signal for driving the low-side power tube can be formed. Further, based on the target drive first state signal, the target drive second state signal, and the target drive third state signal, a target conduction drive signal in an approximately linear state can be obtained.

[0202] When working, the pull-up part of the low-side basic branch maintains the pull-up drive for the low-side power tube until the low-side control signal AIN2 changes from a high level to a low level, that is, when the low-side power tube needs to be turned off, the pull-up drive for the low-side power tube is stopped. Specifically, when the low-side control signal AIN2 changes to a low level, Figure 2 It can be seen that when the pull-up control signal NUP1 is at a high level, the pull-up portion of the low-side basic branch is switched from a working state to a non-working state.

[0203] When the low-side power tube (NMOS tube NM1) needs to be turned off, the low-side power tube is used as the target turn-off power tube, and the high-side power tube belonging to the same side bridge arm is used as the target turn-on power tube. Figure 7 It can be seen that since the low-side control signal AIN2 should be changed from a high level to a low level, at this time, the pull-down control signal NDW1 is a high level, the low-side basic branch pull-down part is in a working state, and the gate terminal voltage AO2 of the low-side power tube is pulled down by the low-side basic branch pull-down part, that is, the gate terminal voltage AO2 of the low-side power tube begins to decrease. When the low-side power tube is initially turned off, the gate terminal voltage AO2 will be greater than the driving acceleration reference voltage V3, and also greater than the driving acceleration reference voltage V2 and the pre-control reference voltage V1. Therefore, the low-side predictive control comparison signal C1, the low-side driving acceleration comparison signal C2, and the low-side driving acceleration comparison signal C3 output by the low-side voltage comparator 11 are all high levels. Figure 8 and Fig. 9 It can be seen that the pull-down control signal NDW2 and the pull-down control signal NDW3 are both at low levels, and the two low-side acceleration branch pull-down parts are in a non-working state, that is, only the low-side basic branch pull-down part is used to shut down the low-side power tube.

[0204] When the gate terminal voltage AO2 of the low-side power tube drops below the driving acceleration reference voltage V3, the low-side prediction control comparison signal C1 and the low-side driving acceleration comparison signal C2 output by the low-side voltage comparator 11 remain at a high level, and the output low-side driving acceleration comparison signal C3 is a low level. At this time, the pull-down control signal NDW1 and the pull-down control signal NDW2 are both high levels, and the low-side reference branch pull-down part and the low-side acceleration branch pull-down part where the low-side acceleration branch pull-down current source ISET3 is located are both in a working state. The low-side control driving signal formed at this time can accelerate the drop of the gate terminal voltage AO2 of the low-side power tube, and can also accelerate the shutdown of the driving low-side power tube.

[0205] When the gate terminal voltage AO2 of the low-side power tube drops below the driving acceleration reference voltage V2, the low-side prediction control comparison signal C1 output by the low-side voltage comparator 11 is at a low level, and the low-side driving acceleration comparison signal C2 and the low-side driving acceleration comparison signal C3 are both at a high level. At this time, the pull-down control signal NDW1~pull-down control signal NDW3 are all at a high level, and the low-side basic branch pull-down part and the two low-side acceleration branch pull-down parts are all in a working state, so as to further accelerate the drop of the gate terminal voltage AO2 of the low-side power tube, and thus further accelerate the shutdown of the driving low-side power tube.

[0206] When the gate terminal voltage AO2 of the low-side power tube drops and matches the pre-control reference voltage V1, the low-side prediction control comparison signal C1, the low-side drive acceleration comparison signal C2 and the low-side drive acceleration comparison signal C3 output by the low-side voltage comparator 11 are all low levels, and the pull-down control signal NDW2~pull-down control signal NDW3 are all low levels, and the pull-down control signal NDW1 is a high level. At this time, only the low-side basic branch pull-down part is used to shut down the low-side power tube until the low-side power tube is in a completely shut-down state. Of course, during the shutdown process of the low-side power tube, the low-side basic branch pull-down part is still in a working state.

[0207] It can be seen from the above description that when the gate terminal voltage AO2 of the low-side power tube drops to match the pre-control reference voltage V1, the low-side predictive control comparison signal C1 at this time can be used as a power tube shutdown feedback signal in an effective state, and fed back to the high-side power tube drive circuit, so that the high-side power tube drive circuit can turn on the high-side power tube (PMOS tube PM1).

[0208] Figure 3 FIG. 6 shows an embodiment of a low-side current regulating circuit 6. In the figure, the low-side current regulating circuit 6 includes an operational amplifier U1, a common-phase terminal reference voltage VREF of the operational amplifier U1, and an inverting terminal resistor R S One end and the resistor R DT One end of the resistor R DT The other end of the resistor RS is grounded, the other end of the resistor RS is connected to the source end of the NMOS tube NM6, the gate end of the NMOS tube NM6 is connected to the gate end of the operational amplifier U1, the drain end of the NMOS tube NM6 is connected to the drain end of the PMOS tube PM6, the gate end of the PMOS tube PM6 and the gate end of the PMOS tube PM7, the drain end of the PMOS tube PM7 is connected to the current source ISET5, and the source end of the PMOS tube PM6 and the source end of the PMOS tube PM7 are both connected to the power supply VS.

[0209] In specific implementation, the resistor R DT It can be a variable resistor, by adjusting the resistance R DT The resistance value can adjust the current of the low-side current regulating circuit 6, and can further adjust the current of the pull-up current source and the pull-down current source when they are working accordingly. For example, when the low-side current regulating circuit 6 is used to further adjust the current of the pull-up current source in the low-side control driving circuit 5 when it is working, the drain end of the PMOS tube PM7 can be connected to the corresponding source end of the PMOS tube PM4 and the PMOS tube PM4; when adjusting the current of the pull-down current source when it is working accordingly, please refer to the description here, and no examples will be given here one by one.

[0210] Figure 1 A schematic diagram of an embodiment of a high-side power tube driving circuit is also shown in FIG. Figure 1 In the embodiment, the high-side power tube driving circuit includes a high-side gate voltage detection circuit 7, a high-side control circuit 8, a high-side control driving circuit 9 and a high-side current regulating circuit 10. The high-side gate voltage detection circuit 7 can realize the comparison between the gate terminal voltage AO1 of the high-side power tube and the driving control reference voltage. Fig.12 An embodiment of the high-side gate voltage detection circuit 7 is shown in FIG. Fig.12 In the embodiment, the high-side gate voltage detection circuit 7 includes a high-side voltage comparator 14 .

[0211] Fig.12 In the figure, A01 is the gate voltage of the high-side power tube, V10 is the pre-control reference voltage corresponding to the high-side power tube, V20 is a driving acceleration reference voltage, and V30 is another driving acceleration reference voltage. As can be seen from the above description, the pre-control reference voltage V10 can be VSS-(0.4~0.6)*Vth, the driving acceleration reference voltage V20 can be VSS-(1.5~2)*Vth, and the driving acceleration reference voltage V30 can be VSS-(0.7~0.8)*VSS. Figure 1 In the figure, VSS is the working power supply of the H-bridge circuit, and Vth is the threshold voltage of the high-side power tube.

[0212] Fig.12 In the illustrated embodiment, the high-side voltage comparator 14 has at least three output terminals, so as to respectively output corresponding low-side pre-control comparison signals and two low-side drive acceleration comparison signals using the three output terminals. Fig.12 In the figure, B1 can be a high-side prediction control comparison signal, B2 can be a high-side drive acceleration comparison signal, and B3 can be another high-side drive acceleration comparison signal, wherein the high-side drive acceleration comparison signal B2 represents the comparison state between the high-side power tube gate terminal voltage and the drive acceleration reference voltage V20, and the high-side drive acceleration comparison signal B3 represents the comparison state between the high-side power tube gate terminal voltage and the drive acceleration reference voltage V30. Figure 1 , Figure 2 As can be seen from the above description, the high-side prediction control comparison signal B1 should be fed back to the low-side power tube driving circuit.

[0213] Fig.12 Also shown is an embodiment of the high-side control drive circuit 9. As can be seen from the figure, the high-side control drive circuit 9 includes a high-side drive branch and two high-side drive acceleration branches, wherein the high-side drive branch includes a high-side basic branch pull-up portion and a high-side basic branch pull-down portion, and each high-side drive acceleration branch includes a high-side acceleration branch pull-up portion and a corresponding high-side acceleration branch pull-down portion.

[0214] Fig.12The high-side basic pull-up portion includes a PMOS tube PM8, wherein the source terminal of the PMOS tube PM8 is connected to the power supply VSS through a resistor R3, the drain terminal of the PMOS tube PM8 is connected to the gate terminal of the high-side power tube and the high-side basic branch pull-down portion, and the gate terminal of the PMOS tube PM8 is connected to the high-side control circuit 8. Fig.12 In the embodiment, the gate terminal of the PMOS transistor PM8 receives the pull-up control signal PUP1 output by the high-side control circuit 8.

[0215] Fig.12 The high-side basic branch pull-down portion includes an NMOS tube NM7, wherein the source terminal of the NMOS tube NM7 is grounded through a resistor R4, the drain terminal of the NMOS tube NM7 is connected to the drain terminal of the PMOS tube PM8 and the gate terminal of the high-side power tube, and the gate terminal of the NMOS tube NM7 is connected to the high-side control circuit 8. Fig.12 In the embodiment, the gate terminal of the NMOS transistor NM7 receives the pull-down control signal PDW1 output by the high-side control circuit 8 .

[0216] Fig.12 The high-side acceleration branch pull-up portion of the first high-side driving acceleration branch includes a PMOS tube PM9, the source terminal of the PMOS tube PM9 is connected to the output terminal of the high-side acceleration branch pull-up current source ISET6, the drain terminal of the PMOS tube PM9 is connected to the gate terminal of the high-side power tube, and the gate terminal of the PMOS tube PM9 receives the pull-up control signal PUP2 output by the high-side control circuit 8. The high-side acceleration branch pull-down portion of the first high-side driving acceleration branch includes an NMOS tube NM8, wherein the source terminal of the NMOS tube NM8 is connected to the high-side acceleration branch pull-down current source ISET8, the drain terminal of the NMOS tube NM8 is connected to the drain electrode of the PMOS tube PM9 and the gate terminal of the high-side power tube, and the gate terminal of the NMOS tube NM8 receives the pull-down control signal PDW2 output by the high-side control branch 8.

[0217] Fig.12 The high-side acceleration branch pull-up portion of the second high-side driving acceleration branch includes a PMOS tube PM10, the source terminal of the PMOS tube PM10 is connected to the output terminal of the high-side acceleration branch pull-up current source ISET7, the drain terminal of the PMOS tube PM10 is connected to the gate terminal of the high-side power tube, and the gate terminal of the PMOS tube PM10 receives the pull-up control signal PUP3 output by the high-side control circuit 8. The high-side acceleration branch pull-down portion of the second high-side driving acceleration branch includes an NMOS tube NM9, wherein the source terminal of the NMOS tube NM9 is connected to the high-side acceleration branch pull-down current source ISET9, the drain terminal of the NMOS tube NM9 is connected to the drain electrode of the PMOS tube PM10 and the gate terminal of the high-side power tube, and the gate terminal of the NMOS tube NM9 receives the pull-down control signal PDW3 output by the low-high-side control branch 8.

[0218] Depend on Fig.12 As can be seen from the above description, the high-side control driving circuit 9 and the low-side control driving circuit 5 adopt the same structural form. Therefore, the specific working principle of the high-side control driving circuit 9 can refer to the corresponding description of the low-side control driving circuit 5, which will not be repeated here. When the high-side control driving circuit 9 adopts the above form, the high-side control circuit 8 can adopt the same structural form as the low-side control circuit 4. When the same structural form as the low-side control circuit 4 is adopted, the high-side control circuit 8 can include a high-side pull-up control unit 15 and a high-side pull-down control unit 16.

[0219] Fig.12 In the embodiment, the signals loaded into the high-side pull-up control unit 15 include the low-side pre-control comparison signal C1, the high-side predictive control comparison signal B1, the high-side driving acceleration comparison signal B2, the high-side driving acceleration comparison signal B3 and the high-side control signal AIN1. Fig.12 In the embodiment, the signals loaded into the high-side pull-down control unit 16 include the high-side prediction control comparison signal B1, the high-side driving acceleration comparison signal B2, the high-side driving acceleration comparison signal B3 and the high-side control signal AIN1.

[0220] Fig.10 FIG. 4 shows an embodiment in which the high-side pull-up control unit 15 generates the pull-up control signal PUP1 . In the figure, the high-side control signal AIN1 is output as the pull-up control signal PUP1 via the inverter INV2 . Fig.11 An embodiment of the high-side pull-up control unit 15 generating the pull-up control signal PUP2 is shown in the figure. In the figure, the high-side control signal AIN1, the inverted high-side pre-control comparison signal B1 and the high-side drive acceleration comparison signal B3 are loaded to the corresponding output end of the NAND gate U7, and the pull-up control signal PUP2 can be output through the output end of the NAND gate U7.

[0221] Fig.13 An embodiment of the high-side pull-up control unit 15 generating the pull-up control signal PUP3 is shown in the figure. In the figure, the high-side control signal AIN1, the inverted low-side pre-control comparison signal B1, and the high-side drive acceleration comparison signal B2 are loaded to the corresponding output end of the NAND gate U8, and the pull-up control signal PUP3 can be output through the output end of the NAND gate U8.

[0222] Fig.14 , an embodiment of the high-side pull-down unit 16 generating the pull-down control signal PDW1 is shown. In the figure, the inverted high-side control signal AIN1 and the inverted low-side pre-control comparison signal C1 can output the pull-down control signal PDW1 through the AND gate U9. Fig.15An embodiment of the high-side pull-down unit 16 generating the pull-down control signal PDW2 is shown in the figure. In the figure, the inverted high-side control signal AIN1, the inverted low-side pre-control comparison signal C1, the inverted high-side prediction control comparison signal B1 and the high-side drive acceleration comparison signal B3 are loaded to the corresponding input terminals of the AND gate U10, and the pull-down control signal PDW2 can be output through the output terminal of the AND gate U10. Fig.16 An embodiment of the high-side pull-down unit 13 generating the pull-down control signal PDW3 is shown in the figure. In the figure, the inverted high-side control signal AIN1, the inverted low-side pre-control comparison signal C1, the inverted high-side prediction control comparison signal B2 and the high-side drive acceleration comparison signal B3 are loaded to the corresponding input terminals of the AND gate U11, and the pull-down control signal PDW3 can be output through the output terminal of the AND gate U11.

[0223] It can be seen from the above description that the high-side power tube and the low-side power tube use different types of power tubes. The high-side power tube driving circuit drives the high-side power tube to perform shutdown driving and conduction driving. For the above description of the low-side power tube performing corresponding drive control on the low-side power tube, no further details are given here. In addition, the high-side current regulating circuit 10 can adopt the same form as the above-mentioned low-side current regulating circuit 6. At this time, the situation of the high-side current regulating circuit 10 can refer to the corresponding description of the above-mentioned low-side current regulating circuit 6, and no further details are given here.

[0224] Fig.18 An embodiment of the corresponding relationship between the load current size and the dead time of the H-bridge circuit is shown in the figure. It can be seen from the figure that the load current size will affect the rate of change of the corresponding gate terminal voltage of the target on-power tube and the target off-power tube of the H-bridge circuit, and the time when the gate terminal voltage reaches the pre-control reference voltage will also change. In the figure, I1, I2, and I3 are the corresponding load currents, and t1, t2, and t3 are the times when the dead zone occurs under the corresponding load current. The present invention adaptively controls the drive control of the target off-power tube and the target on-power tube by driving the control reference voltage to achieve adaptive adjustment of the dead zone, thereby making the drive control of the H-bridge circuit adaptable to different load conditions.

[0225] Since there is a Miller platform during the switching process of the power tube, a current source is used in the low-side acceleration drive branch / high-side acceleration drive branch of the present invention for acceleration driving, and the parasitic capacitance of the power tube is charged and discharged by the current source, while the gate terminal voltage of the power tube does not change during this process. Therefore, a driving control method using a current source is adopted, so that the gate terminal voltage loaded to the power tube is approximately linear, and the charging speed can be accelerated to better overcome the influence of the Miller platform, thereby improving the switching speed of the power tube, and preventing the circuit from self-resonance while improving the circuit efficiency.

[0226] The charging speed of the corresponding current source can be further adjusted through the high-side current regulating circuit 10 and the low-side current regulating circuit 6, and the power-on speed can be controlled more flexibly, and the adaptive dead time can be controlled between 0.2us and 2us.

[0227] Compared with the prior art, the present invention can reduce the loss caused by the traditional fixed dead time through the adaptive adjustment of the dead time of the H-bridge circuit, so that the dead time of the power tube in the H-bridge circuit can be automatically adjusted to achieve better driving performance under different load currents and different operating frequencies.

Claims

1. An adaptive drive control method suitable for an H-bridge circuit, characterized in that: Used to switch and control the working states of two bridge power tube groups in an H-bridge circuit, wherein any bridge power tube group includes a high-side power tube located in one bridge arm of the H-bridge circuit and a low-side power tube located in the other bridge arm of the H-bridge circuit; For the H-bridge circuit, the bridge power tube group to be switched to the working state is used as the target on-bridge tube group, and the other bridge power tube group in the H-bridge circuit is used as the target off-bridge tube group. When the H-bridge circuit is adaptively driven and controlled, the high-side power tube and the low-side power tube in the target on-bridge tube group are driven to the on state, and the high-side power tube and the low-side power tube in the target off-bridge tube group are driven to the off state, wherein the adaptive drive control method includes: First, the high-side power tube and the low-side power tube in the target shutdown bridge tube group are driven to shut down, wherein, when any target shutdown power tube in the target shutdown bridge tube group is driven to shut down, the gate terminal voltage of the current target shutdown power tube is obtained, and the obtained gate terminal voltage is compared with a preset drive control reference voltage to determine the shutdown information of the current target shutdown power tube, and the target shutdown power tube is the high-side power tube or the low-side power tube in the target shutdown bridge tube group; Based on the shutdown information of the current target shutdown power tube, a target shutdown drive signal in an approximately linear state is loaded to the gate end of the target shutdown power tube, so as to drive the target shutdown power tube to be gradually shut down based on the target shutdown drive signal until the target shutdown power tube is in a completely shut-down state; The shutdown information of the target shutdown power tube includes at least a pre-shutdown state and a full shutdown state, wherein the target on-power tube in the target on-bridge tube group is driven to be on only when the shutdown information of the target shutdown power tube is at least the pre-shutdown state, and the target on-power tube and the target off-power tube are located on the same side bridge arm in the H-bridge circuit; When the target conduction power tube is driven to conduct, the gate terminal voltage of the current target conduction power tube is obtained, and the obtained gate terminal voltage is compared with the preset drive control reference voltage of the target conduction power tube to determine the conduction state of the current target conduction power tube; Based on the conduction state of the current target conduction power tube, a target conduction drive signal in an approximately linear state is loaded to the gate end of the current target conduction power tube, so as to drive the current target conduction power tube to gradually turn on based on the target conduction drive signal until the current target conduction power is in a fully conduction state.

2. The adaptive drive control method suitable for an H-bridge circuit according to claim 1, characterized in that: When the same high-side power tube or low-side power tube is used as the target off-power tube and the target on-power tube respectively, the preset drive control reference voltage used by the target off-power tube is the same as the drive control reference voltage used by the target on-power tube; In an H-bridge circuit, when the high-side power tube and the low-side power tube of the same bridge arm use different types of power tubes, the drive control reference voltage used by the high-side power tube is different from the drive control reference voltage used by the low-side power tube located in the same bridge arm.

3. The adaptive drive control method suitable for an H-bridge circuit according to claim 1 or 2, characterized in that: Any driving control reference voltage includes at least a pre-control reference voltage and a plurality of driving acceleration reference voltages; When adaptive driving control is performed on the target turn-off power tube and the target turn-on power tube located in the same side bridge arm, the following is obtained: When driving the target shutdown power tube to shut down, before the gate terminal voltage of the target shutdown power tube matches the corresponding pre-control reference voltage, a target shutdown driving signal for accelerating the shutdown of the target shutdown power tube is generated based on the gate terminal voltage of the target shutdown power tube and the corresponding driving acceleration reference voltage, so as to drive the target shutdown power tube to shut down under the target shutdown driving signal until the gate terminal voltage of the target shutdown power tube matches the pre-control reference voltage; After the gate terminal voltage of the target shutdown power tube matches the corresponding pre-control reference voltage, a corresponding target shutdown drive signal is generated based on the gate terminal voltage of the target shutdown power tube and the corresponding pre-control reference voltage to drive the target shutdown power tube under the current target shutdown drive signal until it is in a completely shutdown state, wherein, After the gate terminal voltage of the target shutdown power tube matches the corresponding pre-control reference voltage, a power tube shutdown feedback signal in a valid state is generated, so as to indicate that the target shutdown power tube is in a pre-shutdown state based on the power tube feedback signal; Based on the power tube shutdown feedback signal in the effective state, the target conduction power tube is driven to conduction based on the target drive conduction signal until the target conduction power tube is in a fully conduction state, wherein when the target conduction power tube is driven to conduction, the target drive conduction signal at least includes a target drive conduction first state signal, a target drive second state signal and a target conduction drive third state signal; When the gate terminal voltage of the target on-power tube does not match the pre-control reference voltage, the target on-power tube is driven to be on with a target drive on first state signal; When the gate terminal voltage of the target on-power tube matches the pre-control reference voltage, the target on-power tube is driven to conduction by a target drive second state signal, wherein the target drive second state signal is generated based on the gate terminal voltage of the target on-power tube and the drive acceleration reference signal; When the gate terminal voltage of the target conduction power tube matches the driving acceleration driving signal as the accelerated cutoff, the target conduction power tube is driven to conduct with the target driving third state signal until the target conduction power tube is in a fully conducted state, wherein, The driving capability of the target driving third state signal is the same as the driving capability of the target driving first state signal, and the driving capability of the target driving third state signal is smaller than the driving capability of the target driving second state signal.

4. The adaptive drive control method suitable for an H-bridge circuit according to claim 3, characterized in that: Each bridge arm of the H-bridge circuit is configured with a corresponding bridge arm power tube driving circuit, so as to drive and control the high-side power tube and the low-side power tube in the connected bridge arm by using the bridge arm power tube driving circuit, wherein: When the H-bridge circuit is adaptively driven and controlled, a valid on-control signal and a valid off-control signal are loaded to the bridge arm power tube driving circuit based on the target on-power tube and the target off-power tube. The bridge arm power tube driving circuit first drives the target shutdown power tube to shut down under the shutdown control signal in the effective state. When the gate voltage of the target shutdown power tube matches the pre-control reference voltage used by the target shutdown power tube, the bridge arm driving power tube circuit will turn on the target turn-on power tube belonging to the same side bridge arm under the conduction control signal in the effective state.

5. The adaptive drive control method suitable for an H-bridge circuit according to claim 4, characterized in that: The bridge arm power tube driving circuit includes a high-side power tube driving circuit for driving and controlling the high-side power tube and a low-side power tube driving circuit for driving and controlling the low-side power tube, wherein: When the high-side power tube is used as the target on-power tube, the low-side power tube belonging to the same side bridge arm is used as the target off-power tube. At this time, a conduction control signal in a valid state is loaded to the high-side power tube driving circuit, and a shutdown control signal in a valid state is loaded to the low-side power tube driving circuit; Based on the shutdown control signal in an effective state, the low-side power tube driving circuit first drives the low-side power tube to shut down. When the gate terminal voltage of the low-side power tube matches the pre-control reference voltage used by the low-side power tube, the low-side power tube driving circuit loads the power tube shutdown feedback signal in an effective state to the high-side power tube driving circuit. Thereafter, under the power tube shutdown feedback signal in an effective state and the conduction control signal, the high-side power tube driving circuit loads the target conduction drive signal to the gate terminal of the high-side power tube to conduction drive the high-side power tube. When the low-side power tube is used as the target on-power tube, the high-side power tube belonging to the same side bridge arm is used as the target off-power tube. At this time, a conduction control signal in a valid state is loaded to the low-side power tube driving circuit, and a shutdown control signal in a valid state is loaded to the high-side power tube driving circuit; Based on the shutdown control signal in the effective state, the high-side power tube driving circuit first drives the high-side power tube to shut down. When the gate terminal voltage of the high-side power tube matches the pre-control reference voltage used by the high-side power tube, the high-side power tube driving circuit loads the power tube shutdown feedback signal in the effective state to the low-side power tube driving circuit. Thereafter, under the power tube shutdown feedback signal and the conduction control signal in the effective state, the low-side power tube driving circuit loads the target conduction drive signal to the gate terminal of the low-side power tube to conduct the low-side power tube.

6. The adaptive drive control method suitable for an H-bridge circuit according to claim 5, characterized in that: The low-side power tube driving circuit includes a low-side gate voltage detection circuit and a low-side control driving signal generating circuit connected in sequence, wherein: The low-side gate voltage detection circuit is used to compare the gate terminal voltage of the low-side power tube with the driving control reference voltage used by the low-side power tube to generate a low-side pre-control comparison signal and a plurality of low-side driving acceleration comparison signals, wherein the low-side pre-control comparison signal and all the low-side driving acceleration comparison signals are loaded into the low-side control driving signal generating circuit, and the low-side pre-control comparison signal is also loaded into the high-side power tube driving circuit. Based on the low-side pre-control comparison signal, all low-side drive acceleration comparison signals, the low-side control signal and the high-side pre-control comparison signal loaded by the high-side power tube drive circuit, the low-side control drive signal generation circuit generates a corresponding low-side control drive signal, wherein, The low-side control signal is an on-control signal in a valid state or an off-control signal in a valid state; When the low-side control signal is a shutdown control signal in an effective state, when the gate terminal voltage of the low-side power tube matches the pre-control reference voltage, a power tube shutdown feedback signal in an effective state is formed based on the current low-side pre-control comparison signal, and a low-side shutdown drive signal for shutting down the low-side power tube is formed based on the low-side control drive signal; When the low-side control signal is a conduction control signal in a valid state, a low-side conduction drive signal for conducting and driving the low-side power tube is formed based on the low-side control drive signal; When at least one low-side driving acceleration comparison signal is in an effective state, the low-side control driving signal generating circuit generates a low-side control driving signal for accelerating the control driving of the low-side power tube.

7. The adaptive drive control method suitable for an H-bridge circuit according to claim 6, characterized in that: The low-side control drive signal generating circuit comprises a low-side control circuit and a low-side control drive circuit, wherein: The low-side control circuit is connected to the low-side gate voltage detection circuit and the low-side control drive circuit, and the low-side control drive circuit is connected to the gate terminal of the low-side power tube; The low-side control circuit generates a low-side drive selection control signal based on the low-side pre-control comparison signal, all low-side drive acceleration comparison signals, the low-side control signal, and the high-side pre-control comparison signal loaded by the high-side power tube drive circuit; Based on the low-side drive selection control signal, the low-side control drive circuit generates a low-side control drive signal of corresponding drive capability, and loads the low-side control drive signal to the gate terminal of the low-side power tube.

8. The adaptive drive control method suitable for an H-bridge circuit according to claim 7, characterized in that: The low-side control driving circuit comprises a low-side driving basic branch and a plurality of low-side driving acceleration branches connected in parallel with the low-side driving basic branch, wherein: The number of low-side driving acceleration branches is not less than the number of driving acceleration reference voltages; When at least one low-side drive acceleration comparison signal is in a valid state, the low-side control drive circuit generates a corresponding low-side control drive signal based on the low-side drive basic branch and the corresponding low-side drive acceleration branch; otherwise, the low-side control drive circuit generates a corresponding low-side control drive signal based on the low-side drive basic branch.

9. The adaptive drive control method suitable for an H-bridge circuit according to claim 8, characterized in that: The low-side driving basic branch includes a low-side basic branch pull-up portion and a low-side basic branch pull-down portion, and any low-side driving acceleration branch includes a low-side acceleration branch pull-up portion and a low-side acceleration branch pull-down portion, wherein, The low-side basic branch pull-up portion or the low-side basic branch pull-down portion is selected to be in a working state through the low-side drive selection control signal to form a low-side basic branch drive portion. When at least one driving acceleration comparison signal is in a valid state, the low-side acceleration branch pull-up part or the low-side acceleration branch pull-down part of the corresponding low-side driving acceleration branch is used as the low-side acceleration branch driving part, so as to utilize the low-side acceleration branch driving part and the low-side basic branch driving part to jointly drive and control the low-side power tube.

10. The adaptive drive control method suitable for an H-bridge circuit according to claim 9, characterized in that: The low-side acceleration branch pull-up portion includes a low-side acceleration branch pull-up current source, and the low-side acceleration branch pull-down portion includes a low-side acceleration branch pull-down current source, wherein: When the low-side acceleration branch pull-up portion or the low-side acceleration branch pull-down portion is configured as the low-side acceleration branch driving portion, the corresponding low-side acceleration branch pull-up current source and the low-side acceleration branch pull-down current source are used to accelerate the driving control of the low-side power tube; The low-side control driving circuit is also adaptively connected to a low-side current regulating circuit for current regulation, so as to utilize the low-side current regulating circuit to regulate the low-side control driving signal loaded to the gate terminal of the low-side power tube.

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