SiC-CVD uniform gas supply device and method

Abstract

The invention relates to the technical field of SiC-CVD gas supply devices, and discloses a SiC-CVD uniform gas supply device and method.A nozzle pipeline is installed in the middle of the top side of a furnace body, so that trepanning machining on the side face of the furnace body can be effectively reduced, the sealing performance of the furnace body is better, the stability and uniformity of the gas environment in a furnace chamber can be further improved, and the service life of the furnace chamber is prolonged. MTS gas is uniformly introduced to the periphery through the nozzle at the upper part of the nozzle pipeline, so that the gas is more uniformly distributed around the substrate, impurities on the substrate or the product can be blown to the two sides of the furnace chamber by utilizing gas flow, and purer silicon carbide with uniform thickness is obtained; the nozzles at the upper part of the nozzle pipeline adopt highly flexible holes in design, the openings of the nozzles incline upwards and are gradually enlarged from top to bottom, and the number of the nozzles and the holes are designed according to the space size of the furnace chamber and the accumulation of substrates, so that the uniformity of gas in the furnace chamber is ensured, the production efficiency is improved, and the thickness difference of obtained products is reduced.

Description

Technical Field

[0001] The invention relates to the technical field of SiC-CVD gas supply devices, and in particular to a SiC-CVD uniform gas supply device and method. Background Art

[0002] With the increasing use of SiC materials in the semiconductor industry, its SiC-CVD technology is also constantly developing and improving. Improving the growth rate and quality of products is the main development trend. In order to obtain high-quality raw materials for silicon carbide products, chemical vapor deposition technology is used in production to manufacture silicon carbide. Two or more gaseous raw materials are introduced into the furnace chamber, and a chemical reaction occurs on the surface of the substrate, thereby forming the required solid film or coating on the substrate, wherein the furnace chamber is mainly composed of a furnace bottom, a furnace shell, a furnace cover, etc. At present, in the process of producing silicon carbide products, in order to reduce costs and increase production, the substrate is stacked in the furnace chamber, occupying a large space, and the nozzle is installed in the reserved hole opened on the side of the furnace shell. Multiple nozzles are required to pass the MTS gas required for the deposition reaction into the furnace chamber, wherein the flow rate of each branch nozzle gas is controlled by a flow controller.

[0003] Affected by other structures outside the furnace shell (heater, temperature sensor, furnace body mounting bracket, cooling water inlet and outlet holes, etc.), it is difficult to keep the vent hole positions (for placing nozzle tubes) evenly arranged in the vertical or circumferential direction of the furnace shell through the reserved openings on the side, and due to structural restrictions, there should not be too many holes; and when the gas is blown to the middle of the furnace chamber through the nozzle, multiple airflows form a collision phenomenon, which makes it difficult for the gas to reach the center of the furnace chamber, and the reaction gas is close to the periphery of the furnace chamber, the density in the middle is low, and the MTS gas molecules introduced are not diffused evenly around the substrate, which finally causes differences in product thickness; when there are too many holes on the furnace body, the sealing performance deteriorates. For this reason, a device and method for uniform gas supply for SiC-CVD are proposed. Summary of the invention

[0004] The purpose of the present invention is to provide a device and method for uniform gas supply of SiC-CVD, so as to solve the problem mentioned in the background technology that it is difficult to keep the vent hole positions (for placing the nozzle tube) uniformly arranged in the vertical or circumferential direction of the furnace shell by reserving the openings on the side, and the number of holes should not be too many due to structural restrictions. When the gas is blown to the middle of the furnace chamber through the nozzle, multiple airflows form a counter-attack phenomenon, which makes it difficult for the gas to reach the center of the furnace chamber, and the reaction gas is close to the periphery of the furnace chamber, and the density in the middle is low, so that the MTS gas molecules introduced are not diffused uniformly around the substrate, and finally the product thickness is different, and the sealing performance is deteriorated when there are too many holes in the furnace body.

[0005] To achieve the above object, the present invention provides the following technical solutions: a device and method for uniform gas supply of SiC-CVD, comprising a furnace body, a gas supply mechanism, a collection mechanism and a temperature control mechanism, wherein the gas supply mechanism, the collection mechanism and the temperature control mechanism are all installed in cooperation with the furnace body;

[0006] The gas supply mechanism is used for supplying gas, and the gas supply mechanism includes a gas storage tank and a nozzle pipe. The nozzle pipe is connected and installed with the gas storage tank. The nozzle pipe is installed in the middle of the top side of the furnace body. The upper part of the nozzle pipe is evenly provided with gas supply nozzles in an inclined shape, and the opening of the gas supply nozzle gradually increases from top to bottom.

[0007] The collecting mechanism is used for collecting deposited materials, and comprises a substrate and a support column, wherein the substrate is stacked in layers and installed inside the furnace body through the support column;

[0008] The temperature control mechanism is used for heating and raising the temperature in the furnace chamber. The temperature control mechanism comprises a thermocouple temperature sensor and a heater. Both the thermocouple temperature sensor and the heater are installed inside the furnace body.

[0009] Preferably, the furnace body is divided into two layers, an inner layer and an outer layer. The furnace body is composed of a steel shell layer, and a heat-insulating layer is arranged on the inner side of the furnace body.

[0010] Preferably, a water guide bar is provided between the interlayers of the two steel shell layers, the water guide bar is evenly and fixedly installed between the interlayers of the steel shell layers, and a water inlet and a water outlet are respectively provided at both ends of the water guide bar.

[0011] Preferably, the nozzle pipe is fixedly passed through the upper center of the furnace body, the lower part of the nozzle pipe is located inside the furnace body, and the gas supply nozzle is evenly fixed and connected to the circumference of the nozzle pipe in a circular shape.

[0012] Preferably, the upper end of the nozzle pipe is connected to an air inlet pipe, and the upper end of the nozzle pipe is connected to the air outlet end of the air storage tank through the air inlet pipe. The upper part of the air inlet pipe is provided with an air storage tank ball valve and an air inlet ball valve.

[0013] Preferably, the gas tank ball valve is installed at the gas outlet pipe end of the gas tank, and the gas inlet ball valve is installed at the gas inlet pipe end of the nozzle pipe.

[0014] Preferably, an exhaust pipe is connected and installed in the middle of the bottom side of the furnace body, an exhaust ball valve is arranged on the upper part of the exhaust pipe, and the exhaust ball valve is installed at the exhaust opening end of the exhaust pipe.

[0015] Preferably, the substrate and the support column are both provided in plurality, the support column at the bottom is installed in an interlocking support with a support provided at the bottom of the furnace body, and the substrate is installed in an interlocking support between two adjacent support columns.

[0016] Preferably, the above-mentioned heaters and thermocouple temperature sensors are provided in plurality, and several of the heaters are supported and evenly fixed on the inner circumference of the furnace body by brackets. A protective cover is provided on the outside of the heater, and the protective cover is fixedly installed on the inside of the furnace body by the bracket. The protective cover shields the outside of the heater. The thermocouple temperature sensor is fixedly installed through the circumference of the furnace body, and the sensing end of the thermocouple temperature sensor is plugged and installed around the internal substrate of the furnace body.

[0017] The present invention also provides a method for using a SiC-CVD uniform gas supply device, comprising the following steps:

[0018] S1. Installing the substrate, placing the substrate and support columns required for the reaction into the furnace chamber of the furnace body;

[0019] S2, preheating preparation, after completing the installation of the substrate and the support column, the air in the furnace body and the furnace chamber is extracted from the exhaust pipe through the external vacuum system to make the furnace chamber in a vacuum state, creating high-quality conditions for the subsequent steps, and then the heater is turned on to allow the temperature in the furnace chamber to gradually and steadily rise to the temperature required for the SiC deposition reaction, completing the preheating preparation;

[0020] S3, charging reaction, after completing the preheating preparation, the inert gas is introduced into the furnace chamber, and the inert gas is introduced evenly through the nozzle pipe. By controlling the gas flow, the furnace chamber pressure is consistent with the atmospheric pressure, and then the MTS gas is evenly introduced into the center of the furnace chamber through the carefully designed nozzle pipe. The MTS gas passes through the nozzle on the upper part of the nozzle pipe and blows and diffuses from the center of the furnace chamber to the surroundings, which not only makes the gas more evenly distributed around the substrate, but also can use the airflow to blow the impurities on the substrate or product to both sides of the furnace chamber. The MTS gas decomposes after being heated to produce the required reaction products, which are deposited on the substrate and gradually accumulate to form a thin film. The exhaust ball valve needs to be opened while ventilating;

[0021] S4, exhaust and unloading. After the reaction precipitation is completed, close the ball valve of the gas storage tank, extract the waste gas in the furnace body through the exhaust equipment and the exhaust pipe, and then introduce inert gas into the furnace chamber to balance the air pressure. After that, take out the support column and substrate in the furnace body to complete the unloading work.

[0022] Compared with the prior art, the present invention adopts the above technical solution and has the following technical effects:

[0023] 1. The top-opening pipe installation method is adopted, and the nozzle pipe is introduced from the top of the furnace body, which can effectively reduce the opening processing on the side of the furnace body, reduce the risk of gas leakage, make the sealing of the furnace body better, and further improve the stability and uniformity of the gas environment in the furnace room, thereby improving product quality and optimizing energy efficiency.

[0024] 2. The nozzle pipe is set in the center of the furnace body. The MTS gas is evenly ventilated to the surroundings through the nozzle on the upper part of the nozzle pipe, which not only makes the gas more evenly distributed around the substrate, but also can use the airflow to blow the impurities on the substrate or product to both sides of the furnace chamber, so as to obtain purer silicon carbide with uniform thickness.

[0025] 3. The nozzle on the top of the nozzle pipe is designed with highly flexible openings. The side of the nozzle pipe is evenly distributed with nozzles in the vertical and circumferential directions. Due to the high density of MTS gas, the nozzle opening is tilted upward. The nozzle hole gradually increases from top to bottom, and the nozzle hole near the furnace top is the smallest. The number of nozzles and openings are designed according to the space size of the furnace chamber and the accumulation of substrates to ensure the uniformity of the gas in the furnace chamber, improve production efficiency, and reduce the difference in product thickness. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0027] Figure 1 It is a schematic diagram of the overall structure installation distribution of the present invention;

[0028] Figure 2 For the present invention Figure 1 Schematic diagram of the structure of the middle A area;

[0029] Figure 3 For the present invention Figure 1 Schematic diagram of the structure of area B.

[0030] Explanation of the accompanying drawings: 1. furnace body; 2. water guide strip; 3. gas storage tank; 4. nozzle pipe; 5. substrate; 6. thermocouple temperature sensor; 7. air inlet pipe; 8. insulation layer; 9. support column; 10. exhaust pipe; 11. heater; 12. gas storage tank ball valve; 13. air inlet ball valve; 14. exhaust ball valve; 15. water inlet; 16. water outlet; 17. protective cover. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the conditions under which this application can be implemented. Therefore, they have no substantive technical significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed in this application without affecting the effects and purposes that can be achieved by this application.

[0033] Example

[0034] See also Figure 1-3 The present invention provides a technical solution: a device and method for uniform gas supply for SiC-CVD, comprising a furnace body 1, a gas supply mechanism, a collection mechanism and a temperature control mechanism, as shown in the attached Figure 1 As shown, the furnace wall of the furnace body 1 adopts a composite sandwich structure. The furnace body 1 is divided into two layers, inner and outer, to ensure that the furnace chamber provides the environment required for the growth of silicon carbide and ensure its sealing. The inner and outer layers of the furnace body 1 are composed of a steel shell. The steel shell layer is a steel outer shell to ensure that the furnace body 1 has sufficient structural stability. The interior of the furnace body 1 is provided with an insulation layer 8, which is a high-temperature resistant composite insulation liner, and the material can be ceramic fiber or aluminum silicate. By covering and fixing the insulation material around the interior of the furnace body 1, it plays a role of insulation during production, thereby improving the stability of the temperature inside the furnace body 1.

[0035] In order to achieve rapid cooling of the furnace body 1, as shown in the attached Figure 1 As shown, a water guide bar 2 is arranged between the interlayers of the steel shell layer, and the water guide bar 2 is evenly and fixedly installed between the interlayers of the steel shell layer. The water guide bar 2 is installed between the inner and outer shells of the furnace body 1. In order to facilitate the passage of water, a water inlet 15 and a water outlet 16 are respectively arranged at both ends of the water guide bar 2. When the product reaction is completed, cooling water is allowed to pass through the water inlet 15 along the water guide bar 2 to the water outlet 16 to cool the furnace chamber.

[0036] The gas supply mechanism, the collection mechanism, and the temperature control mechanism are all installed in conjunction with the furnace body 1. Specifically, the gas supply mechanism is used to supply and introduce gas. The gas supply mechanism includes a gas storage tank 3 and a nozzle pipe 4. Figure 1As shown, the nozzle pipe 4 is installed in the middle of the top side of the furnace body 1, and the nozzle pipe 4 is fixedly passed through the upper center of the furnace body 1. The top opening type pipe installation method is adopted. The nozzle pipe 4 is introduced from the top of the furnace body 1, which can effectively reduce the opening processing on the side of the furnace body 1, reduce the risk of gas leakage, and make the furnace body 1 more sealed. The stability and uniformity of the gas environment in the furnace chamber can be further improved, and the quality of the product is improved and the energy efficiency is optimized. The lower part of the nozzle pipe 4 is located inside the furnace body 1, and the nozzle pipe 4 is arranged in the central position of the furnace body 1. The MTS gas is evenly ventilated to the surroundings through the nozzle on the upper part of the nozzle pipe 4, which not only makes the gas more evenly distributed around the substrate 5, but also can use the airflow to blow the impurities on the substrate 5 or the product to the two sides of the furnace chamber, so as to obtain purer silicon carbide with uniform thickness. In order to evenly introduce the gas, as shown in the attached figure Figure 2 As shown, gas supply nozzles are evenly arranged in an inclined shape on the upper part of the nozzle pipe 4. The gas supply nozzles are evenly fixed and connected in a circle and installed on the circumferential side of the nozzle pipe 4. The openings of the gas supply nozzles gradually become larger from top to bottom. The number of nozzles and the openings are designed according to the space size of the furnace chamber and the stacking of the substrates 5 to ensure the uniformity of the gas in the furnace chamber, improve the production efficiency, and reduce the differences in the thickness of the obtained products.

[0037] In order to facilitate gas communication, an air inlet pipe 7 is installed at the upper end of the nozzle pipe 4. The upper end of the nozzle pipe 4 is connected to the gas outlet end of the gas storage tank 3 through the air inlet pipe 7. The gas storage tank 3 is placed outside the furnace body 1 to provide the required gas for the crystal growth reaction in the furnace. In order to control the gas supply, as shown in the attached Figure 1 As shown, a gas tank ball valve 12 and an inlet ball valve 13 are provided at the upper part of the inlet pipe 7. The gas tank ball valve 12 is installed at the outlet pipe end of the gas tank 3, and is used for the gas supply connection control of the gas tank 3. The inlet ball valve 13 is installed at the inlet pipe end of the nozzle pipe 4, and is used for the air intake connection control of the nozzle pipe 4. In order to facilitate the discharge of the gas in the furnace body 1, an exhaust pipe 10 is installed in the middle part of the bottom side of the furnace body 1. In order to control the connection of the exhaust pipe 10, an exhaust ball valve 14 is provided at the upper part of the exhaust pipe 10. The exhaust ball valve 14 is installed at the exhaust opening end of the exhaust pipe 10.

[0038] The collecting mechanism is used for collecting material deposition, and the collecting mechanism includes a substrate 5 and a support column 9, as shown in the attached Figure 3 As shown, a plurality of substrates 5 and support columns 9 are provided, the bottommost support column 9 is embedded and supported by a support provided at the bottom of the furnace body 1, the substrate 5 is disc-shaped as a cornerstone for supporting the growth of silicon carbide, the substrate 5 is embedded and supported between two adjacent support columns 9, the support columns 9 serve as a bridge connecting the substrate 5 and the furnace body 1, ensuring the stability and uniform spacing of the substrate 5, and are installed at a suitable position in the furnace chamber, so that the substrate 5 is installed in a layered stacked state inside the furnace body 1, which can effectively increase the contact area between the substrate 5 and the silicon carbide gas.

[0039] The temperature control mechanism is used for heating and heating the furnace chamber. The temperature control mechanism includes a thermocouple temperature sensor 6 and a heater 11. The thermocouple temperature sensor 6 and the heater 11 are both installed inside the furnace body 1. The heater 11 and the thermocouple temperature sensor 6 are both provided with a plurality of Figure 1 As shown, several heaters 11 are evenly fixedly installed on the inner circumference of the furnace body 1 through the support of the bracket. They are installed inside the furnace body 1 by drilling holes on the side of the furnace body 1 to change the temperature of the reaction gas and the substrate 5 in the furnace chamber to create a suitable reaction environment for the reaction. In order to shield and protect the heater 11, a protective cover 17 is provided on the outside of the heater 11. The protective cover 17 is fixedly installed on the inside of the furnace body 1 through the bracket. The protective cover 17 shields the outside of the heater 11 to prevent objects from being deposited on the heater 11 and the upper part of the thermocouple temperature sensor 6 to affect heating and temperature measurement. In order to detect the temperature in the furnace body 1, the thermocouple temperature sensor 6 is fixedly installed on the circumference of the furnace body 1. The thermocouple temperature sensor 6 is placed at the position of the required measurement point through the reserved hole on the side of the furnace body 1. The sensing end of the thermocouple temperature sensor 6 is plugged and installed inside the furnace body 1 to detect the temperature distribution at various positions inside the furnace chamber.

[0040] Working principle or structural principle, when working, first load the substrate 5 and support column 9 required for the reaction into the furnace chamber of the furnace body 1, check the heater 11 and the thermocouple temperature sensor 6 after installation, complete the placement and installation of the substrate 5, and then extract the air in the furnace chamber of the furnace body 1 from the exhaust pipe 10 through the external vacuum system, so that the furnace chamber is in a vacuum state, creating high-quality conditions for subsequent steps, and then turn on the heater 11 to allow the temperature in the furnace chamber to gradually and steadily rise to the temperature required for the SiC deposition reaction, and then introduce inert gas into the furnace chamber. The inert gas is evenly introduced through the nozzle pipe 4, and the furnace chamber pressure is made consistent with the atmospheric pressure by controlling the gas flow rate, and then the MTS gas is The body is evenly introduced into the center of the furnace chamber through a well-designed nozzle pipe 4. The MTS gas is blown and diffused from the center of the furnace chamber to the surroundings through the nozzle on the upper part of the nozzle pipe 4, which not only makes the gas more evenly distributed around the substrate 5, but also can use the airflow to blow the impurities on the substrate 5 or the product to the two sides of the furnace chamber. The MTS gas is decomposed after being heated to produce the required reaction product, which is deposited on the substrate 5 and gradually accumulates to form a thin film to complete the processing operation. After the reaction precipitation is completed, the ball valve of the gas storage tank is closed, and the exhaust gas in the furnace body is extracted through the exhaust equipment and the exhaust pipe 10, and then inert gas is introduced into the furnace chamber to balance the air pressure. After that, the support column 9 and the substrate 5 in the furnace body 1 are taken out to complete the unloading work.

[0041] In summary, the top opening type pipeline installation method is adopted, and the nozzle pipeline 4 is introduced from the top of the furnace body 1, which can effectively reduce the opening processing on the side of the furnace body 1, reduce the risk of gas leakage, and make the sealing of the furnace body 1 better, which can further improve the stability and uniformity of the gas environment in the furnace chamber, improve the quality of the product and optimize energy efficiency. The nozzle pipeline 4 is arranged in the central position of the furnace body 1, and the MTS gas is evenly ventilated to the surrounding areas through the nozzle on the upper part of the nozzle pipeline 4, which not only makes the gas more evenly distributed around the substrate 5, but also can use the airflow to blow the impurities on the substrate 5 or the product to the two sides of the furnace chamber, so as to obtain purer silicon carbide with uniform thickness. The nozzle on the upper part of the nozzle pipeline 4 adopts highly flexible opening in design, and the side of the nozzle pipeline 4 is evenly distributed with nozzles arranged in the vertical and circumferential directions. The nozzle opening is tilted upward, the MTS gas density is relatively large, and the nozzle hole gradually increases from top to bottom. The nozzle hole close to the furnace top is the smallest. The number of nozzles and openings are designed according to the space size of the furnace chamber and the accumulation of the substrate 5 to ensure the uniformity of the gas in the furnace chamber, improve the production efficiency, and reduce the difference in the thickness of the obtained products.

[0042] The present invention also provides a method for using a SiC-CVD uniform gas supply device, comprising the following steps:

[0043] S1, substrate installation, loading the substrate 5 and support column 9 required for the reaction into the furnace chamber of the furnace body 1;

[0044] S2, preheating preparation, after the installation of the substrate 5 and the support column 9 is completed, the air in the furnace chamber of the furnace body 1 is extracted from the exhaust pipe 10 through the external vacuum system, so that the furnace chamber is in a vacuum state, creating high-quality conditions for the subsequent steps, and then the heater 11 is turned on to gradually and steadily increase the temperature in the furnace chamber to reach the temperature required for the SiC deposition reaction, completing the preheating preparation work;

[0045] S3, charging reaction, after completing the preheating preparation, the inert gas is introduced into the furnace chamber, and the inert gas is introduced evenly through the nozzle pipe 4. By controlling the gas flow rate, the furnace chamber pressure is made consistent with the atmospheric pressure, and then the MTS gas is evenly introduced into the center of the furnace chamber through the well-designed nozzle pipe 4. The MTS gas is blown and diffused from the center of the furnace chamber to the surroundings through the nozzle on the upper part of the nozzle pipe 4, which not only makes the gas more evenly distributed around the substrate 5, but also can use the airflow to blow the impurities on the substrate 5 or the product to the two sides of the furnace chamber. The MTS gas is decomposed after being heated to produce the desired reaction product, which is deposited on the substrate 5 and gradually accumulates to form a thin film;

[0046] S4, exhaust and unloading. After the reaction precipitation is completed, close the ball valve of the gas storage tank, extract the waste gas in the furnace body through the exhaust equipment and the exhaust pipe, and then introduce inert gas into the furnace chamber to balance the air pressure. After that, take out the support column 9 and the substrate 5 in the furnace body 1 to complete the unloading work.

[0047] It will be appreciated by those skilled in the art that the features described in the various embodiments and / or claims of the present invention may be combined and / or combined in various ways, even if such combinations and / or combinations are not explicitly described in the present invention. In particular, the features described in the various embodiments and / or claims of the present invention may be combined and / or combined in various ways without departing from the spirit and teachings of the present invention. All of these combinations and / or combinations fall within the scope of the present invention.

Claims

1. A SiC-CVD uniform gas supply device, comprising a furnace body (1), a gas supply mechanism, a collection mechanism and a temperature control mechanism, characterized in that: The gas supply mechanism, the collection mechanism, and the temperature control mechanism are all installed in coordination with the furnace body (1); The gas supply mechanism is used for supplying gas, and comprises a gas storage tank (3) and a nozzle pipe (4). The nozzle pipe (4) is connected and installed with the gas storage tank (3). The nozzle pipe (4) is installed at the middle of the top side of the furnace body (1). The upper part of the nozzle pipe (4) is evenly provided with gas supply nozzles in an inclined shape, and the opening of the gas supply nozzle gradually increases from top to bottom. The collecting mechanism is used for collecting deposited materials, and comprises a substrate (5) and a support column (9), wherein the substrate (5) is installed in a layered manner inside the furnace body (1) through the support column (9); The temperature control mechanism is used for heating and raising the temperature in the furnace chamber, and comprises a thermocouple temperature sensor (6) and a heater (11), and both the thermocouple temperature sensor (6) and the heater (11) are installed inside the furnace body (1).

2. The SiC-CVD uniform gas supply device according to claim 1, characterized in that: The furnace body (1) is divided into two inner and outer steel shell layers, and a heat-insulating layer (8) is provided inside the furnace body (1).

3. The SiC-CVD uniform gas supply device according to claim 2, characterized in that: A water guide bar (2) is arranged between the interlayers of the two steel shell layers. The water guide bar (2) is evenly and fixedly installed between the interlayers of the steel shell layers. A water inlet (15) and a water outlet (16) are respectively arranged at two ends of the water guide bar (2).

4. The SiC-CVD uniform gas supply device according to claim 1, characterized in that: The nozzle pipe (4) is fixedly passed through the upper center of the furnace body (1), the lower part of the nozzle pipe (4) is located inside the furnace body (1), and the gas supply nozzle is evenly fixed and connected to the circumferential side of the nozzle pipe (4) in a circular shape.

5. The SiC-CVD uniform gas supply device according to claim 4, characterized in that: The upper end of the nozzle pipe (4) is connected to an air inlet pipe (7), and the upper end of the nozzle pipe (4) is connected to an air outlet end of a gas storage tank (3) through the air inlet pipe (7). An air storage tank ball valve (12) and an air inlet ball valve (13) are provided on the upper part of the air inlet pipe (7).

6. The SiC-CVD uniform gas supply device according to claim 5, characterized in that: The gas tank ball valve (12) is installed at the gas outlet pipe end of the gas tank (3), and the gas inlet ball valve (13) is installed at the gas inlet pipe end of the nozzle pipe (4).

7. The SiC-CVD uniform gas supply device according to claim 6, characterized in that: An exhaust pipe (10) is connected and installed in the middle of the bottom side of the furnace body (1), and an exhaust ball valve (14) is arranged on the upper part of the exhaust pipe (10). The exhaust ball valve (14) is installed at the exhaust opening end of the exhaust pipe (10).

8. The SiC-CVD uniform gas supply device according to claim 1, characterized in that: A plurality of substrates (5) and support columns (9) are provided, the support column (9) at the bottom is mounted in a support engagement with a support provided at the bottom of the furnace body (1), and the substrate (5) is mounted in a support engagement between two adjacent support columns (9).

9. The SiC-CVD uniform gas supply device according to claim 1, characterized in that: A plurality of the heaters (11) and the thermocouple temperature sensors (6) are provided, and a plurality of the heaters (11) are evenly fixedly installed on the inner circumference of the furnace body (1) through the support, and a protective cover (17) is provided on the outside of the heater (11), and the protective cover (17) is fixedly installed on the inside of the furnace body (1) through the support, and the protective cover (17) shields the outside of the heater (11), and the thermocouple temperature sensors (6) are fixedly installed through the circumference of the furnace body (1), and the sensing end of the thermocouple temperature sensor (6) is plugged and installed inside the furnace body (1).

10. A method for using a SiC-CVD uniform gas supply device according to any one of claims 1 to 9, characterized in that: The following steps are involved: S1, substrate installation, loading the substrate (5) and support column (9) required for the reaction into the furnace chamber of the furnace body (1); S2, preheating preparation, after completing the installation of the substrate (5) and the support column (9), the air in the furnace chamber of the furnace body (1) is extracted from the exhaust pipe (10) through the external vacuum system, so that the furnace chamber is in a vacuum state, creating high-quality conditions for subsequent steps, and then the heater (11) is turned on to allow the temperature in the furnace chamber to gradually and steadily rise to the temperature required for the SiC deposition reaction, completing the preheating preparation work; S3, inflation reaction, after completing the preheating preparation work, the inert gas is introduced into the furnace chamber, and the inert gas is introduced evenly through the nozzle pipe (4). By controlling the gas flow rate, the furnace chamber pressure is made consistent with the atmospheric pressure. Then, the MTS gas is evenly introduced into the center of the furnace chamber through the carefully designed nozzle pipe (4). The MTS gas is blown and diffused from the center of the furnace chamber to the surroundings through the nozzle on the upper part of the nozzle pipe (4). Not only does it make the gas more evenly distributed around the substrate (5), but it can also use the airflow to blow impurities on the substrate (5) or the product to both sides of the furnace chamber. The MTS gas decomposes after being heated to produce the desired reaction product, which is deposited on the substrate (5) and gradually accumulates to form a thin film. During the ventilation, the exhaust ball valve (14) must also be opened; S4, exhaust and unloading. After the reaction precipitation is completed, close the ball valve (12) of the gas storage tank, extract the waste gas in the furnace body (1) through the exhaust equipment and the exhaust pipe (10), and then introduce inert gas into the furnace chamber to balance the air pressure. After that, take out the support column (9) and the substrate (5) in the furnace body (1), and complete the unloading work.

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