Method for manufacturing package structure

Abstract

A method for manufacturing a package structure is provided. The method includes providing a package structure including a first region and a second region different from the first region, wherein the package structure includes a package substrate having an active surface and a backside surface; and irradiating the package structure with a first light beam in a first direction from the active surface toward the backside surface, wherein the first light beam only irradiates the first region and does not irradiate the second region.

Description

Technical Field

[0001] The present disclosure generally relates to a method for manufacturing a package structure. Background Art

[0002] Based on its rapid heating characteristics, laser assisted bonding (LAB) is often used to replace the conventional reflow process in the melting of bumps, solder balls, pads and / or other electrical connection elements to achieve fine pitch flip chip bonding. However, due to the different thermal conductivities of different materials, LAB may damage materials, such as epoxy molding materials or substrates. In order to solve the aforementioned problems, an improved method for manufacturing semiconductor packages is needed. Summary of the invention

[0003] In one or more configurations, a method for manufacturing a packaging structure includes: providing a packaging structure including a first region and a second region different from the first region, wherein the packaging structure includes a packaging substrate having an active surface and a backside surface; and irradiating the packaging structure with a first light beam along a first direction from the active surface toward the backside surface, wherein the first light beam only irradiates the first region and does not irradiate the second region.

[0004] In one or more configurations, a method for manufacturing a packaging structure includes: providing a packaging structure including a first region and a second region different from the first region; irradiating the packaging structure along a first path; irradiating the packaging structure along a second path different from the first path; and shielding the first region without shielding the second region in the second path.

[0005] In one or more configurations, a method for manufacturing a packaging structure includes: providing a packaging structure including a first region and a light-transmitting region, wherein the light transmittance of the light-transmitting region is greater than the light transmittance of the first region; and irradiating the packaging structure with a light beam along a first direction, wherein the light beam overlaps with the first region but not with the light-transmitting region. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Aspects of the present disclosure are better understood from the following detailed description when read in light of the accompanying drawings.It should be noted that various features may not be drawn to scale and that the sizes of various features may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1A , Figure 1B , Figure 2A , Figure 2B , Figure 3 , Figure 4 , Figure 5 , Figure 6 and Figure 7Various stages of an exemplary method for manufacturing a package structure according to some configurations of the present disclosure are shown.

[0008] Fig. 8A , Figure 8B , Fig. 9 , Fig.10 , Fig.11 , Fig.12 and Fig.13 Various stages of an exemplary method for manufacturing a package structure according to some configurations of the present disclosure are shown. DETAILED DESCRIPTION

[0009] Figure 1A , Figure 1B , Figure 2A , Figure 2B , Figure 3 , Figure 4 , Figure 5 , Figure 6 and Figure 7 Various stages of an exemplary method for manufacturing a package structure according to some configurations of the present disclosure are shown.

[0010] A diagram showing various stages of an exemplary method for manufacturing a package structure Figure 1A and Figure 1B The processing apparatus 40 may include an upper structure 40A and a lower structure 40B. The upper structure 40A and the lower structure 40B may define a space 40S for accommodating one or more package structures (eg, package structures 1 and 1A) during the manufacturing process.

[0011] In some configurations, upper structure 40A includes a plurality of optical-transmissive regions and a plurality of shielding regions. The optical-transmissive regions may be or include regions having openings 60H1, 60H2, 60H3, 60H4, 60H5, and 60H6 (also referred to as "through holes"). The shielding regions may be or include shielding regions 60 and 60A (also referred to as "masks," "upper masks," or "top masks"). The masks (i.e., shielding regions 60 and 60A) may define openings 60H1, 60H2, 60H3, 60H4, 60H5, and 60H6. In some configurations, the upper structure 40A further includes a plurality of compression elements 720 and 720A (also referred to as "optical-transmissive compression elements") disposed in the light-transmitting region (or openings 60H1, 60H2, 60H3, 60H4, 60H5, and 60H6) and configured to reduce warpage of one or more package structures during manufacturing. In some configurations, the compression elements 720 and 720A are or include quartz blocks and / or quartz layers. The design (e.g., pattern, number, shape, etc.) of the light-transmitting region and the shielding region of the upper structure 40A can be changed according to actual needs and is not limited thereto.

[0012] In some configurations, the lower structure 40B is disposed below the upper structure 40A. In some configurations, the lower structure 40B includes a plurality of shielding regions 50 and 50A (also referred to as "masks", "lower masks", or "bottom masks") that do not vertically overlap with the shielding regions 60 and 60A. In some configurations, the lower structure 40B further includes a support member 710 (also referred to as a "light-transmitting support member") that is configured to guide one or more packaging structures to contact the upper structure 40A during manufacturing. In some configurations, the support member 710 includes a base layer 710B (also referred to as a "light-transmitting base layer") and a vacuum suction structure. In some configurations, the vacuum suction structure includes a plurality of vacuum suction channels 710H and 710HA (also referred to as "through holes") that penetrate the base layer 710B. In some configurations, the support member 710 is between the shielding areas 60 and 60A (or the upper mask) and the shielding areas 50 and 50A (or the lower mask), and is configured to reduce the warping of one or more packaging structures during manufacturing. In some configurations, the shielding areas 60 and 60A (or the upper mask) do not overlap vertically with the shielding areas 50 and 50A (or the lower mask). In some configurations, the vacuum suction channels 710H and 710HA do not overlap vertically with the shielding areas 50, 50A, 60 and 60A. In some configurations, each compression element 720 and 720A is disposed above each corresponding shielding area 50 and 50A. In some configurations, the compression element 720 includes compression elements 721, 722 and 723, each in the openings 60H1, 60H2 and 60H3, respectively. In some configurations, compression element 720A includes compression elements 724, 725, and 726, each in openings 60H4, 60H5, and 60H6, respectively. In some configurations, shielding region 50 includes shielding regions 510, 520, and 530, each under openings 60H1, 60H2, and 60H3, respectively. In some configurations, shielding region 50A includes shielding regions 540, 550, and 560, each under openings 60H4, 60H5, and 60H6, respectively. In some configurations, compression elements 721, 722, 723, 724, 725, and 726 are above shielding regions 510, 520, 530, 540, 550, and 560, respectively. In some configurations, reference Figure 1B , from a top view perspective, the edges of the respective shielding regions 510, 520, 530, 540, 550, and 560 are spaced apart from the edges of the respective corresponding openings 60H1, 60H2, 60H3, 60H4, 60H5, and 60H6. Figure 1B, from a top view perspective, the area of ​​each shielding area 510, 520, 530, 540, 550 and 560 is smaller than the area of ​​each corresponding opening 60H1, 60H2, 60H3, 60H4, 60H5 and 60H6. In some configurations, the support member 710 is or includes a quartz block and / or a quartz layer. In some configurations, the support member 710 is a single-piece block or layer. In some configurations, the support member 710 may include a plurality of parts separated or spaced apart from each other. The parts of the support member 710 may be configured to correspond to a plurality of packaging structures. For example, each of the plurality of parts of the support member 710 may be configured to correspond to each of the plurality of packaging structures. In some configurations, the lower structure 40B may further include a light-transmitting area that is within the range covered by the support member 710 and not covered by the shielding area 50 from a top view perspective. The design (eg, pattern, number, shape, etc.) of the light-transmitting area and the shielding area of ​​the lower structure 40B may be changed according to actual needs and is not limited thereto.

[0013] Hereinafter, the light-transmitting area may be configured to allow a light beam (e.g., an energy beam) having a predetermined wavelength or wavelength range to be transmitted. In some configurations, the light-transmitting area has a transmittance greater than about 90%, 95%, 97%, or 99% for the peak wavelength or wavelength range of the energy beam. The energy beam may be a laser beam, such as an NIR laser. The wavelength range of the energy beam may be in the infrared range (e.g., from about 705nm to about 2000nm). Hereinafter, the shielding area may be configured to shield or prevent the transmission of the energy beam having a predetermined wavelength or wavelength range. In some configurations, the shielding area has a transmittance of no more than about 10%, 5%, 3%, or 1% for the peak wavelength or wavelength range of the energy beam. The energy beam may be a laser beam, such as an NIR laser. The wavelength of the energy beam may be in the infrared range (e.g., from about 705nm to about 2000nm). The shielding area may be made of or include a metal material, such as aluminum (Al), steel, or other suitable metal materials configured to shield or prevent energy beams having the aforementioned wavelength range. The steel may be SK5 or any other suitable carbon tool steel. According to some configurations of the present disclosure, the shielding area is made of or includes a metal material having relatively high heat resistance and heat dissipation efficiency, and may block or reflect an energy beam (e.g., a laser beam).

[0014] Figure 2A and Figure 2B The various stages of an exemplary method for manufacturing a package structure are shown. Figure 2A and Figure 2B1 and 1A are respectively a cross-sectional view and a top view of one or more package structures (e.g., package structures 1 and 1A) that can be provided thereby. Package structures 1 and 1A can be placed in a processing device 40 or transported to the processing device. In some configurations, package structures 1 and 1A can each be placed in a carrier boat 31 or fixed to the carrier boat by a covering fixture 32. Package structures 1 and 1A can be transported to the processing device 40 by the carrier boat 31. Support member 710 can have one or more recesses 710R, which are configured to accommodate or receive the carrier boat 31. In some configurations, upper structure 40A (or shielding areas 60 and 60A) and lower structure 40B (or shielding areas 50 and 50A) are located on opposite sides of package structures 1 and 1A. In some configurations, package structures 1 and 1A can each include substrates 10 and 20 (or package substrates).

[0015] The substrate 10 may include, for example, a printed circuit board, for example, a paper-based copper foil laminate, a composite copper foil laminate, or a polymer-impregnated fiberglass-based copper foil laminate. The substrate 10 may include an interconnect structure, such as a plurality of conductive traces or through-holes. In some configurations, the substrate 10 includes a ceramic material or a metal plate. In some configurations, the substrate 10 may include an organic substrate or a lead frame. In some configurations, the substrate 10 may include a double-layer substrate including a core layer and a conductive material and / or structure disposed on the upper surface and the bottom surface of the substrate 10. The conductive material and / or structure may include a plurality of traces.

[0016] In some configurations, the substrate 10 includes a dielectric structure 100, a wiring structure 110 (also referred to as “RDL”) in the dielectric structure 100, dielectric layers 120 and 130 on opposite surfaces of the dielectric structure 100, and conductive pads 140 and 150 on opposite surfaces of the dielectric structure 100. In some configurations, the wiring structure 110 includes a plurality of wiring layers (or conductive layers), and the dielectric structure 100 may include a plurality of dielectric layers (not shown) disposed between the wiring layers of the wiring structure 110. In some configurations, the dielectric layer 120 defines one or more openings that expose a portion of an upper surface of the dielectric structure 100, and the conductive pad 140 is disposed on the exposed upper surface of the dielectric structure 100 and is electrically connected to the wiring structure 110. In some configurations, the conductive pad 150 is disposed on the bottom surface of the dielectric structure 100 and is electrically connected to the conductive pad 140 through the wiring structure 110, and the dielectric layer 130 covers the bottom surface of the dielectric structure 100 and a portion of the conductive pad 150. In some configurations, the dielectric layer 130 defines a plurality of openings, and a portion of the conductive pad 150 is exposed by the openings of the dielectric layer 130. In some configurations, the dielectric layer may independently include an organic material, a solder resist, PI, ABF, one or more molding materials, one or more pre-impregnated composite fibers (e.g., prepreg material), borophosphosilicate glass (BPSG), silicon oxide, silicon nitride, silicon oxynitride, undoped silicate glass (USG), any combination thereof, etc. The conductive layer and / or the pad may independently include a conductive material, such as a metal or a metal alloy. Examples include gold (Au), silver (Ag), aluminum (Al), copper (Cu), or alloys thereof.

[0017] In some configurations, the substrate 20 includes electronic components 210 and 210A, an encapsulant 220, a redistribution layer (RDL) 230, a connection element 240, and an underfill 250. The electronic components 210 and 210A may be or include semiconductor devices. In some configurations, the encapsulant 220 encapsulates the electronic components 210 and 210A, and the underfill 250 encapsulates the connection element 240. The substrate 20 may have an active surface adjacent to the RDL 230 and a backside surface adjacent to the electronic component 210. In some configurations, the electronic component 210 includes a substrate layer 211 (e.g., a silicon-based layer), a passivation layer 212 on a bottom surface of the substrate layer 211, a conductive pad 213 exposed through an opening of the passivation layer 212, and an under bump metallization (UBM) 214 on an exposed surface of the conductive pad 213. The electronic component 210 may be or include a passive die or an active die, such as an application specific integrated circuit (ASIC) or any other type of active die. The RDL 230 may electrically connect the substrate 10 to the substrate 20. In some configurations, the RDL 230 includes one or more dielectric layers, a plurality of conductive layers in the dielectric layers, and a plurality of conductive vias connecting adjacent conductive layers. The conductive layer may include conductive pads and / or conductive pillars adjacent to and exposed by the upper surface and / or bottom surface of the RDL 230. The conductive pads or conductive pillars of the RDL 230 may be electrically connected to the UBM 214 through the connecting element 240. In some configurations, the RDL 230 includes a conductive pad 231 electrically connected to the conductive pad 140 of the substrate 10. In some configurations, the electronic component 210A includes a plurality of dies 211A stacked and electrically connected to each other, an encapsulant 212A encapsulating the dies 211A, and a conductive pad 213A electrically connected to the connection element 240. The die 211A may include a top die exposed by the encapsulant 212A, a bottom die such as a logic die, and a plurality of memory dies stacked between the top die and the bottom die. In some configurations, the dielectric layer may independently include an organic material, a solder mask, PI, ABF, one or more molding materials, one or more pre-impregnated composite fibers (e.g., prepreg material), BPSG, silicon oxide, silicon nitride, silicon oxynitride, USG, any combination thereof, etc. The conductive layer, pad, via, and / or column may independently include a conductive material, such as a metal or a metal alloy. Examples include Au, Ag, Al, Cu, or alloys thereof. The encapsulant 220 and the underfill 250 may independently include epoxy resin with filler, molding materials (such as epoxy molding materials or other molding materials), polyimide, phenolic compounds or materials, materials with silicone dispersed therein, or combinations thereof. The connection element 240 may include a solder material.

[0018] In some configurations, the package structures 1 and 1A may each include different regions. For example, the first region may include a homogeneous material (e.g., a semiconductor substrate, such as substrate layer 211), and the second region may include a composite material (e.g., an encapsulant 220). The composite material may include a resin and a plurality of fillers. In some configurations, the light absorptivity of the first region may be greater than the light absorptivity of the second region. In some configurations, the material (e.g., a composite material) that may be included in the first region has a thermal decomposition temperature that is lower than the thermal decomposition temperature of the material (e.g., a homogeneous material) in the second region. The first region may be referred to as an opaque region or a semi-transparent region, and the second region may be referred to as a transparent region. The transmittance of the transparent region may be greater than the transmittance of the first region. The opaque region may include or correspond to an encapsulant, and the transparent region may include or correspond to an electronic component. In some configurations, the package structures 1 and 1A may each have a region R1 and a region R2 that is different from region R1. Region R1 may be referred to as an opaque region, and region R2 may be referred to as a transparent region. In some configurations, region R1 partially overlaps region R2. In some configurations, the overlapping region of region R1 and region R2 has a uniform or non-uniform width (e.g., width W1, W1', W2, and W2'), which is equal to or less than about 0.5 mm, for example, from about 0.3 mm to about 0.5 mm. Widths W1, W1', W2, and W2' may be the same or different. In some configurations, region R1 vertically overlaps with encapsulation 220. In some configurations, region R2 vertically overlaps with electronic components 210 and 210A. In some configurations, the vacuum suction structure of support member 710 (e.g., vacuum suction channels 710H and 710HA) does not vertically overlap with region R1 and region R2. In some configurations, each of packaging structures 1 and 1A may further include a plurality of first connecting elements 310 in region R1 and a plurality of connecting elements 320 in region R2. The connection elements 310 and 320 may be connected to the active surface of the substrate 20. In some configurations, the connection elements 310 and 320 may be or include one or more solder materials. The connection elements 310 and 320 may be or include solder joints, such as solder balls, solder bumps, etc. In some configurations, as shown in the enlarged block B, the substrate 10 and the substrate 20 are spaced apart from each other by a distance D1 defined by the maximum height of the connection elements 310 and / or 320. In some configurations, one or more of the connection elements 310 and 320 may be spaced apart from the conductive pad 140. In some configurations, one or more of the connection elements 310 and 320 may be misaligned with the corresponding conductive pad 140.

[0019] refer to Figure 3, the package structures 1 and 1A may be directed to contact the shielding regions 60 and 60A (or the upper mask). In some configurations, the package structures 1 and 1A are directed to contact the shielding regions 60 and 60A (or the upper mask) before irradiating the package structures 1 and 1A. In some configurations, the shielding regions 60 and 60A (or the upper mask) contact the encapsulant 220. In some configurations, the shielding regions 60 and 60A (or the upper mask) further cover or contact the peripheral portions of the electronic components 210 and 210A.

[0020] In some configurations, the upper surfaces of electronic components 210 and 210A are directed to contact compression element 720. In some configurations, compression element 720 is configured to at least allow the energy beam to pass through electronic components 210 and 210A, and also reduce warpage of package structures 1 and 1A. In some configurations, shielding regions 60 and 60A (or upper masks) further contact a portion (e.g., a peripheral portion) of the upper surface of electronic component 210 and a portion (e.g., a peripheral portion) of the upper surface of electronic component 210A. In some configurations, shielding regions 60 and 60A (or upper masks) are configured to reduce the amount of radiation reaching region R1.

[0021] In some configurations, the support member 710 is configured to guide the package structures 1 and 1A toward the mask structure (i.e., the upper structure 40A) of the processing device 40. In some configurations, the package structures 1 and 1A may be guided to contact the shielding regions 60 and 60A (or the upper mask) by pushing the package structures 1 and 1A toward the shielding regions 60 and 60A by the support member 710. In some configurations, the vacuum suction structure (e.g., the vacuum suction channels 710H and 710HA) of the support member 710 is configured to allow the support member 710 to adhere to the package structures 1 and 1A. The package structures 1 and 1A may adhere to the support member 710 by introducing vacuum into the vacuum suction channels 710H and 710HA. In some configurations, after the support 710 is adhered to the package structures 1 and 1A via vacuum suction, the support 710 is configured to further push the package structures 1 and 1A toward and contact the shielding regions 60 and 60A (or upper mask) of the upper structure 40A. In some configurations, the support 710 is configured to allow the energy beam to pass through and reach region R1.

[0022] refer to Figure 4, at least one of the package structures 1 and 1A may be irradiated by at least one light beam (e.g., energy beam L1). The package structure may be irradiated along a first path (e.g., a path irradiated by energy beam L1). In the first path, region R2 may be shielded while region R1 may not be shielded. In some configurations, the package structure 1 is irradiated by energy beam L1 from or along direction DR1 (i.e., from the outside of the support member 710 toward the substrate 10). Direction DR1 may be a direction from the active surface toward the back surface of the substrate 10. In some configurations, region R1 of the package structure 1 is irradiated by energy beam L1 from direction DR1. In some configurations, the package structure has a first surface and a second surface opposite to the first surface, and the energy beam L1 passes through a portion of the first surface of the package structure corresponding to region R1. In some configurations, the connecting element 310 is irradiated by energy beam L1 from direction DR1. In some configurations, the energy beam L1 passes through the wiring structure 110 to provide heat to region R1, so that the connecting element 310 may be melted or at least partially melted. In some configurations, the energy beam L1 provides heat to the wiring structure 110, and then the connecting element 310 in the region R1 can be heated by the heat transmitted from the wiring structure 110. In some configurations, the connecting element 310 contacts the conductive pad 140 and has an irregular shape. The connecting element 310 may have one or more curved sides. The connecting element 310 may have one or more recesses that are recessed toward the inner portion of the connecting element 310. A portion of the upper surface and side of the conductive pad 140 may be exposed by the connecting element 310. In some configurations, at this stage, the connecting element 320 in the region R2 is not heated by any energy beam, and therefore the shape of the connecting element 320 remains substantially unchanged. In some configurations, the distance D1 between the substrate 10 and the substrate 20 remains unchanged because the distance D1 is defined by the maximum height of the connecting element 320. In some configurations, the energy beam L1 may be applied to the package structure along a path (also referred to as a "first path") passing through the reflowable material (e.g., the connection element 310) to irradiate only the region R1 and not the region R2. In some configurations, in a top view perspective, the region R2 is within the footprint of the electronic components (e.g., the electronic components 210 and 210A) of the package structure. In some configurations, when the region R1 is irradiated with the energy beam L1, the region R2 is shielded by the lower mask and is not irradiated by the energy beam L1.

[0023] In some configurations, the processing equipment 40 is configured to reduce the amount of irradiation reaching region R2. In some configurations, the shielding region 50 (or the lower mask) defines a transmission region (also referred to as a "light-transmitting region") that is configured to allow the energy beam L1 to pass through and reach region R1 of the package structure 1. In some configurations, the support member 710 is configured to allow the energy beam L1 to pass through and reach region R1 of the package structure 1. In some configurations, the shielding region 50 (or the lower mask) is configured to reduce the amount of irradiation reaching region R2 of the package structure 1. In some configurations, the shielding region 50 (or the lower mask) is configured to reduce the amount of irradiation from the energy beam L1 that reaches region R2 of the package structure 1. In some configurations, the shielding region 50 (or the lower mask) is configured to block the irradiation of the energy beam L1 from reaching region R2 of the package structure 1. In some configurations, at least 80% of the area of ​​region R2 of the package structure 1 is not irradiated by the energy beam L1.

[0024] In some configurations, the shielding region 50A (or the lower mask) defines a transmission region (also referred to as a "light-transmitting region") that is configured to allow the energy beam L1' to pass through and reach region R1 of the package structure 1A. In some configurations, the support member 710 is configured to allow the energy beam L1' to pass through and reach region R1 of the package structure 1A. In some configurations, the shielding region 50A (or the lower mask) is configured to reduce the amount of irradiation reaching region R2 of the package structure 1A. In some configurations, the shielding region 50A (or the lower mask) is configured to reduce the amount of irradiation from the energy beam L1' that reaches region R2 of the package structure 1A. In some configurations, the shielding region 50A (or the lower mask) is configured to block the irradiation of the energy beam L1' from reaching region R2 of the package structure 1A. In some configurations, at least 80% of the area of ​​region R2 of the package structure 1A is not irradiated by the energy beam L1'.

[0025] In some configurations, region R1 of package structure 1 is irradiated by energy beam L1, and region R1 of package structure 1A is irradiated by energy beam L1'. In some configurations, region R1 of package structure 1 is irradiated by energy beam L1 before region R1 of package structure 1A is irradiated by energy beam L1'. In some configurations, region R1 of package structure 1A is irradiated by energy beam L1' after region R1 of package structure 1 is irradiated by energy beam L1. In some other configurations, energy beam L1' is not provided, and region R1 of package structure 1 and region R1 of package structure 1A are irradiated by a single energy beam L1 simultaneously or in the same operation. In some configurations, depending on the actual application, the irradiation time, irradiation power or other irradiation conditions of region R1 of package structure 1 and region R1 of package structure 1A may be the same or different.

[0026] refer to Figure 5, heat energy may be applied to at least one of the package structures 1 and 1A from or along a direction DR2 different from the direction DR1 using a heat source (e.g., a light beam, e.g., an energy beam L2). In some configurations, the direction DR1 is substantially opposite to the direction DR2 (i.e., the direction from the outside of the compression element 720 toward the substrate 20). In some configurations, heat energy may be applied to the region R2 of the package structure 1 from the direction DR2 using a heat source (e.g., an energy beam L2). In some configurations, heat energy may be applied to the connecting element 320 of the package structure 1 from the direction DR2 using a heat source (e.g., an energy beam L2). In some configurations, the heat source is or includes a light beam (e.g., an energy beam L2). The package structure may be irradiated along a second path (e.g., a path irradiated by the energy beam L2). In the second path, the region R1 may be shielded without shielding the region R2. The surface of the encapsulant 220 may be covered by an upper mask to shield the region R1. A portion of the electronic component 210 may be shielded in the second path. The step of shielding region R1 but not region R2 in the path is later than the step of shielding region R2 but not region R1 in the first path. In some configurations, the energy beam L2 is different from the energy beam L1. In some configurations, the connecting element 320 is irradiated by the energy beam L2 from the direction DR2. In some configurations, the energy beam L2 passes through a first portion of the second surface of the package structure corresponding to region R2 without passing through region R1. In some configurations, the second portion of the second surface of the package structure corresponding to region R1 is shielded when the energy beam L2 is irradiated. In some configurations, the energy beam L2 passes through the electronic components 210 and 210A to provide heat to the region R2, so that the connecting element 320 melts to bond the conductive pad of the substrate 20 to the conductive pad 140 of the substrate 10. In some configurations, the energy beam L2 provides heat to the electronic components 210 and 210A, and then the connecting element 320 in the region R2 can be heated by the heat transmitted from the electronic components 210 and 210A. In some configurations, the region R1 is not irradiated by the energy beam L2. In some configurations, the energy beam L2 does not pass through the encapsulant 220 of the substrate 20. In some configurations, the energy beam L2 is applied to the package structure along a path (also referred to as a "second path") that does not pass through the reflowable material (e.g., the connecting element 310) to irradiate only the region R2 without irradiating the region R1. In some configurations, when the region R2 is irradiated with the energy beam L2, the region R1 is shielded from being irradiated by the energy beam L2.

[0027] In some configurations, processing equipment 40 is configured to reduce the amount of radiation reaching region R1. In some configurations, processing equipment 40 is configured to reduce the amount of radiation reaching region R1 (also referred to as "first radiation amount") and the amount of radiation reaching region R2 from opposite sides of package structures 1 and 1A, respectively (also referred to as "second radiation amount"). In some configurations, shielding regions 50 and 50A (or lower masks) are configured to reduce the amount of radiation reaching region R2, and shielding regions 60 and 60A (or upper masks) are configured to reduce the amount of radiation reaching region R1.

[0028] In some configurations, the shielding region 60 (or upper mask) defines a transmission region (also referred to as a "light-transmitting region", such as openings 60H1, 60H2, and 60H3), which is configured to allow the energy beam L2 to pass through and reach region R2 of the package structure 1. In some configurations, the surface of the encapsulant 220 is covered with an upper mask to shield region R1 when region R2 is irradiated with the energy beam L2. In some configurations, the compression element 720 is configured to allow the energy beam L2 to pass through and reach region R2 of the package structure 1. In some configurations, the shielding region 60 (or upper mask) is configured to reduce the amount of irradiation reaching region R1 of the package structure 1. In some configurations, the shielding region 60 (or upper mask) is configured to reduce the amount of irradiation from the energy beam L2 that reaches region R1 of the package structure 1. In some configurations, the shielding region 60 (or upper mask) is configured to block the irradiation of the energy beam L2 from reaching region R1 of the package structure 1.

[0029] In some configurations, applying thermal energy (or heat) to region R2 of package structure 1 with energy beam L2 begins after irradiating region R1 of package structure 1 with energy beam L1. In some configurations, thermal energy (or heat) begins to be applied to region R2 when connection element 310 is deformed due to the heat of energy beam L1. In some configurations, thermal energy (or heat) begins to be applied to region R2 when the temperature of connection element 310 (or solder) is higher than about 100° C. and lower than the melting point of connection element 310 (or solder) (e.g., from about 150° C. to about 180° C.). In some configurations, the overlapping area of ​​region R1 and region R2 does not vertically overlap with encapsulant 220. In some configurations, the projection of the overlapping area of ​​region R1 and region R2 is completely within the range covered by electronic components 210 and 210A. In some configurations, the overlapping area of ​​region R1 and region R2 is irradiated by energy beam L1 from direction DR1 and heated by the heat source from direction DR2. In some configurations, the overlapping area of ​​the region R1 and the region R2 is irradiated with the energy beam L1 from the direction DR1, and the overlapping area of ​​the region R1 and the region R2 is irradiated with the energy beam L2 from the direction DR2. In some configurations, the step of applying thermal energy (or heat) to the region R2 of the package structure 1 with the energy beam L2 is stopped or completed substantially simultaneously with the step of irradiating the region R1 of the package structure 1 with the energy beam L1.

[0030] In some configurations, the step of irradiating a region R2 of the package structure with the energy beam L2 is performed later than the step of irradiating a region R1 of the package structure with the energy beam L1. In some configurations, the region R1 is within the coverage area of ​​the encapsulation 220 and partially overlaps with the coverage area of ​​the electronic component 210 in a top view perspective. In some configurations, the step of irradiating the package structure along the direction DR2 is performed later than the step of irradiating the package structure along the direction DR1. In some configurations, after the energy beam L1 starts to provide heat to the connecting element 310, the energy beam L2 starts to provide heat to the connecting element 320, and while the energy beam L2 provides heat to the connecting element 320, the energy beam L1 continues to provide heat to the connecting element 310. In some configurations, the connecting element 320 is deformed due to the heat of the energy beam L2. In some configurations, when the connecting element 320 is heated by the energy beam L2, the connecting element 310 is further deformed due to the heat provided by the energy beam L1. After both the connecting elements 310 and 320 melt due to heat and contact the conductive pad 140, the irradiation of the energy beam L1 and the energy beam L2 can be stopped, and the conductive pad of the substrate 20 is bonded to the conductive pad 140 of the substrate 10 through the connecting elements 310 and 320. In some configurations, before stopping the irradiation of the region R2 of the package structure with the energy beam L1, the irradiation of the region R2 of the package structure with the energy beam L2 is stopped. In some configurations, the step of stopping the irradiation of the package structure along the direction DR2 is earlier than the step of stopping the irradiation of the package structure along the direction DR1. In some configurations, when the temperature of the connecting elements 310 and 320 is equal to or exceeds the melting point of the connecting elements 310 and 320 (or solder) (for example, from about 260°C to about 280°C or 300°C), the irradiation of the energy beams L1 and L2 is stopped. According to some configurations of the present disclosure, the irradiation of energy beam L2 stops before the irradiation of energy beam L1 stops, and thus it is possible to prevent unnecessary excess heat from energy beam L2 from being transferred to the enclosure 220. Therefore, the enclosure 220 can be prevented from overheating.

[0031] In some configurations, the irradiation time of energy beam L1 is longer than the irradiation time of energy beam L2. In some configurations, the irradiation time of energy beam L2 is about 1.5 seconds to 2 seconds. In some configurations, the power density of energy beam L1 is less than the power density of energy beam L2. In some configurations, the power density of energy beam L1 is about 70% to about 80% of the power density of energy beam L2. According to some configurations of the present disclosure, by designing the aforementioned irradiation time and / or power density, the dielectric layer within the substrate 10 can be prevented from being damaged due to overheating from the energy beam L1, and thus the substrate 10 can be bonded to the substrate 20 by being irradiated by the energy beams L1 and L2 through the connecting elements 310 and 320 with an increased UPH and without overheating.

[0032] In some configurations, the connecting elements 310 and 320 may have an irregular shape. In some configurations, the connecting elements 310 and 320 may have one or more curved sides. The connecting elements 310 and 320 may have one or more convex sides. A portion of the upper surface and side of the conductive pad 140 may be exposed by the connecting element 310. A portion of the upper surface and side of the conductive pad 140 may be exposed by the connecting element 320. In some configurations, the distance D2 between the substrate 10 and the substrate 20 is reduced compared to the distance D1 between the substrate 10 and the substrate 20 before the region R2 is irradiated with the energy beam L2. Since both the connecting elements 310 and 320 are melted and softened, the substrates 10 and 20 can approach each other with a reduced distance D2 caused by the deformed connecting elements 310 and 320.

[0033] In some configurations, the shielding region 60A (or the upper mask) defines a transmission region (also referred to as a "light-transmitting region", such as openings 60H4, 60H5, and 60H6), which is configured to allow the energy beam L2' to pass through and reach region R2 of the package structure 1A. In some configurations, the compression element 720 is configured to allow the energy beam L2' to pass through and reach region R2 of the package structure 1A. In some configurations, the shielding region 60A (or the upper mask) is configured to reduce the amount of radiation reaching region R1 of the package structure 1A. In some configurations, the shielding region 60A (or the upper mask) is configured to reduce the amount of radiation from the energy beam L2' that reaches region R1 of the package structure 1A. In some configurations, the shielding region 60A (or the upper mask) is configured to block the radiation of the energy beam L2' from reaching region R1 of the package structure 1A.

[0034] The operation of irradiating the package structure 1A with energy beams L1' and L2' is the same or similar to the operation performed on the package structure 1 described herein, and therefore the description thereof is omitted here. In some configurations, the region R2 of the package structure 1 is irradiated by the energy beam L2, and the region R2 of the package structure 1A is irradiated by the energy beam L2'. In some configurations, the region R2 of the package structure 1 is irradiated by the energy beam L2 before the region R2 of the package structure 1A is irradiated by the energy beam L2'. In some configurations, the region R2 of the package structure 1A is irradiated by the energy beam L2' after the irradiation of the region R2 of the package structure 1 by the energy beam L2 is completed. In some other configurations, the energy beam L2' is not provided, and the region R2 of the package structure 1 and the region R2 of the package structure 1A are irradiated by a single energy beam L2 simultaneously or in the same operation. In some configurations, after the package structure 1 is irradiated by the energy beams L1 and L2, the package structure 1A is irradiated by the energy beams L1' and L2'. In some configurations, depending on the actual application, the irradiation time, irradiation power or other irradiation conditions of region R2 of package structure 1 and region R2 of package structure 1A may be the same or different. In some configurations, the order or sequence for performing irradiation with energy beams L1, L2, L1' and L2' may be changed depending on the actual application.

[0035] In some configurations, a laser device may be used to apply a light beam (e.g., energy beams L1 and L2). The laser device may include at least a laser head with a diffuser plate disposed thereon. The laser head may emit a highly localized beam, which then passes through the diffuser plate before reaching the packaging structure. The diffuser plate may diffuse the light intensity distribution of the highly localized beam and turn it into a beam that can provide a relatively large coverage of the packaging structure. The laser head with the diffuser plate may be turned on and moved to one or more predetermined positions or locations to apply a light beam (e.g., energy beams L1 and L2) to the packaging structure to irradiate an area of ​​the packaging structure.

[0036] refer to Figure 6 , the package structures 1 and 1A can be removed or moved away from the upper structure 40A. In some configurations, the package structures 1 and 1A are supported by and adhered to the support 710, and the support 710 is lowered to move the package structures 1 and 1A away from the upper structure 40A.

[0037] refer to Figure 7 , the package structures 1 and 1A may be removed or released from the support 710 and transported out of the processing device 40. In some configurations, the package structures 1 and 1A may be separated from the support 710 by, for example, stopping the introduction of vacuum by introducing gas into the vacuum suction channels 710H and 710HA.

[0038] In some other configurations, refer to Figure 4-5, the irradiation order of energy beam L1 and energy beam L2 can be switched, as long as the irradiation time of energy beam L1 is longer than that of energy beam L2.

[0039] In the case where the package structure includes solder between the substrate and the molded device including the device area and the encapsulant, the solder can be heated by laser energy to join the substrate to the molded device. However, the encapsulant may be easily damaged, degraded or brittle by the laser energy. If the laser beam originates from the outside of the molded device and passes through the device area of ​​the molded device without passing through the encapsulant, the encapsulant can be protected from damage by the heat from the laser beam. However, although the device area is joined to the substrate by the solder heated by the laser beam, the other solder under the encapsulant is not heated by the laser beam, and therefore the encapsulant is not joined to the substrate. On the other hand, if the laser beam originates from the outside of the substrate, the laser beam only passes through the substrate without passing through the encapsulant. Although the encapsulant can be protected from thermal damage, the equivalent thermal conductivity of the substrate is relatively low, the heat transfer through the substrate is relatively slow, and thus the units per hour (UPH) of the process are reduced, which can unfavorably increase the processing time. In order to increase the UPH, the solder can be heated from the opposite side of the package structure with a laser beam. However, the laser beam passing through the encapsulant may damage the molded device, and parts of the substrate and the device area of ​​the molded device may be overheated because the laser beam is irradiated from both sides of the package structure. The package structure may be damaged and the yield is reduced.

[0040] According to some configurations of the present disclosure, by irradiating different regions of the package structure with an energy beam from different directions, the connection elements can be uniformly heated, the package structure can be protected from overheating, and the UPH can be increased.

[0041] In addition, according to some configurations of the present disclosure, two different regions of the package structure that are almost not vertically overlapped are irradiated by energy beams from substantially opposite directions. Thus, the package structure can be heated uniformly, and both regions of the package structure can be protected from overheating. Therefore, UPH and yield can be increased.

[0042] In addition, according to some configurations of the present disclosure, one area shields the electronic components from being irradiated by the energy beam, and another area shields the encapsulation from being irradiated by another energy beam. Therefore, both the electronic components and the encapsulation can be protected from overheating, and thus the yield can be increased.

[0043] In addition, according to some configurations of the present disclosure, the shielding area (or upper mask) adjacent to the encapsulation further covers or contacts a portion (e.g., a peripheral portion) of the electronic component, for example, the overlapping area of ​​two different areas of the package structure does not vertically overlap with the encapsulation. Therefore, the encapsulation can be completely protected from being irradiated by energy beams from two directions, and thus the encapsulation can be protected from thermal damage.

[0044] Fig. 8A , Figure 8B , Fig. 9 , Fig.10 , Fig.11 , Fig.12 and Fig.13 Various stages of an exemplary method for manufacturing a package structure according to some configurations of the present disclosure are shown. To simplify the description and for the convenience of comparison between various embodiments of the present disclosure, similar components in the following examples are labeled with the same reference numerals and may not be redundantly described.

[0045] 1 shows various stages of an exemplary method for manufacturing a semiconductor package Fig. 8A and Figure 8B 4 and 5 are cross-sectional views and top views, respectively, of a processing device 40 that can be provided thereby. Figure 1A and 1B The processing device 40 shown in FIG. 4 includes an upper structure 40A and a lower structure 40B.

[0046] In some configurations, the upper structure 40A includes a plurality of light-transmitting regions and a plurality of shielding regions. The light-transmitting regions may be or include regions having openings 60H1 and 60H4 (also referred to as "through holes"). The shielding regions may be or include shielding regions 60 and 60A (also referred to as "masks," "upper masks," or "top masks"). The masks (i.e., shielding regions 60 and 60A) may define openings 60H1 and 60H4. In some configurations, the upper structure 40A further includes a plurality of compression elements 720 and 720A (also referred to as "light-transmitting compression elements") disposed within the light-transmitting regions (or openings 60H1 and 60H4) and configured to reduce warpage of one or more package structures during manufacturing. In some configurations, the compression elements 720 and 720A are or include quartz blocks and / or quartz layers. The design (eg, pattern, number, shape, etc.) of the light-transmitting area and the shielding area of ​​the upper structure 40A may be changed according to actual needs and is not limited thereto.

[0047] In some configurations, the lower structure 40B is disposed below the upper structure 40A. In some configurations, the lower structure 40B includes a plurality of shielding regions 50 and 50A (also referred to as "masks", "lower masks", or "bottom masks") that do not vertically overlap with the shielding regions 60 and 60A. In some configurations, the lower structure 40B further includes a support member 710 (also referred to as a "light-transmitting support member") that is configured to guide one or more packaging structures to contact the upper structure 40A during manufacturing. In some configurations, the support member 710 includes a base layer 710B (also referred to as a "light-transmitting base layer") and a vacuum suction structure. In some configurations, the vacuum suction structure includes a plurality of vacuum suction channels 710H and 710HA (also referred to as "through holes") that penetrate the base layer 710B. In some configurations, the support member 710 is between the shielding areas 60 and 60A (or the upper mask) and the shielding areas 50 and 50A (or the lower mask), and is configured to reduce warping of one or more packaging structures during manufacturing. In some configurations, the shielding areas 60 and 60A (or the upper mask) do not vertically overlap with the shielding areas 50 and 50A (or the lower mask). In some configurations, the vacuum suction channels 710H and 710HA do not vertically overlap with the shielding areas 50, 50A, 60 and 60A. In some configurations, each compression element 720 and 720A is disposed above each corresponding shielding area 50 and 50A. In some configurations, reference Figure 8B , from a top view perspective, the edges of the respective shielding regions 50 and 50A are spaced apart from the edges of the respective corresponding openings 60H1 and 60H4. Figure 8B , from a top view perspective, the area of ​​each shielding area 50 and 50A is smaller than the area of ​​each corresponding opening 60H1 and 60H4. In some configurations, the support member 710 is or includes a quartz block and / or a quartz layer. In some configurations, the support member 710 is a single-piece block or layer. In some configurations, the lower structure 40B may further include a light-transmitting area that is within the range covered by the support member 710 and not covered by the shielding area 50 from a top view perspective. The design (e.g., pattern, number, shape, etc.) of the light-transmitting area and the shielding area of ​​the lower structure 40B can be changed according to actual needs, and is not limited thereto.

[0048] refer to Fig. 9 , which can be executed similar to Figure 2A-2B The operations shown in , to provide one or more package structures (eg, package structures 1 and 1A). In some configurations, package structures 1 and 1A may each include substrates 10 and 20A.

[0049] In some configurations, the substrate 20A includes electronic components 210 and 280, an encapsulant 220, RDLs 230 and 270, a connecting element 240, and a conductive pillar 260. In some configurations, the encapsulant 220 encapsulates the electronic component 210, the connecting element 240, and the conductive pillar 260. In some configurations, the electronic component 210 includes a substrate layer 211 (e.g., a silicon-based layer), a passivation layer 212 on a bottom surface of the substrate layer 211, and a conductive pad 213 exposed through an opening of the passivation layer 212. The RDL 230 may electrically connect the substrate 10 with the substrate 20. The conductive pillar 260 may electrically connect the RDL 230 with the RDL 270. In some configurations, the RDL 270 includes one or more dielectric layers, a plurality of conductive layers in the dielectric layer, and a plurality of conductive vias connecting adjacent conductive layers. The conductive layer may include conductive pads and / or conductive pillars adjacent to and exposed by the upper surface and / or bottom surface of the RDL 270. The electronic component 280 may be electrically connected to the conductive pad 231 of the RDL 230 through a conductive bump or solder. The electronic component 280 may be or include an active die or a passive die, such as a resistor or any other type of passive die. The conductive layer, pad, via, and / or pillar may independently include a conductive material, such as a metal or a metal alloy. Examples include Au, Ag, Al, Cu, or alloys thereof.

[0050] In some configurations, each of the package structures 1 and 1A may have a region R1 and a region R2 different from region R1. In some configurations, region R1 partially overlaps with region R2. In some configurations, the overlapping area of ​​region R1 and region R2 has a uniform or non-uniform width (e.g., width W1 and W1'), which is equal to or less than about 0.5 mm, for example, from about 0.3 mm to about 0.5 mm. Widths W1 and W1' may be the same or different. In some configurations, region R1 vertically overlaps with encapsulation 220 and conductive pillars 260. In some configurations, region R2 vertically overlaps with electronic components 210 and 280. In some configurations, substrate 10 and substrate 20A are spaced apart from each other by a distance D1 defined by the maximum height of connecting elements 310 and / or 320.

[0051] refer to Fig.10 , which can be executed similar to Figure 3 20 , to guide package structures 1 and 1A to contact shielding regions 60 and 60A (or upper mask). In some configurations, shielding regions 60 and 60A (or upper mask) contact RDL 270. In some configurations, shielding regions 60 and 60A (or upper mask) further cover peripheral portions of electronic component 210. In some configurations, the upper surface of RDL 270 is guided to contact compression element 720 and shielding region 60.

[0052] refer to Fig.11 , which can be executed similar to Figure 4 In the operation shown in , at least one of the package structures 1 and 1A is irradiated from the direction DR1 with at least one energy beam (e.g., energy beam L1). In some configurations, the energy beam L1 provides heat to the wiring structure 110, and then the connecting element 310 in the zone R1 can be heated by the heat transmitted from the wiring structure 110. The connecting element 310 may have one or more curved sides. The connecting element 310 may have one or more recesses that are recessed toward the inner portion of the connecting element 310. A portion of the upper surface of the conductive pad 140 may be exposed by the connecting element 310. A portion of the softened connecting element 310 may be filled in the recess defined by the opening of the dielectric layer 120 above the upper surface of the conductive pad 140. In some configurations, depending on the actual application, the irradiation time, irradiation power or other irradiation conditions of the zone R1 of the package structure 1 and the zone R1 of the package structure 1A may be the same or different.

[0053] refer to Fig.12 , which can be executed similar to Figure 5 In the operation shown in , heat energy is applied to at least one of the package structures 1 and 1A from a direction DR2 different from the direction DR1 using a heat source (e.g., an energy beam L2). In some configurations, after the energy beam L1 starts to provide heat to the connection element 310, the energy beam L2 starts to provide heat to the connection element 320, and while the energy beam L2 provides heat to the connection element 320, the energy beam L1 keeps providing heat to the connection element 310. After both the connection elements 310 and 320 melt due to the heat and contact the conductive pad 140, the irradiation of the energy beam L1 and the energy beam L2 may be stopped, and the conductive pad of the substrate 20 is bonded to the conductive pad 140 of the substrate 10 through the connection elements 310 and 320. The connection elements 310 and 320 may have one or more convex sides. In some configurations, depending on the actual application, the irradiation time, irradiation power or other irradiation conditions of the region R2 of the package structure 1 and the region R2 of the package structure 1A may be the same or different. In some configurations, the order or sequence in which irradiation with energy beams L1 , L2 , L1 ′, and L2 ′ is performed may vary depending on the actual application.

[0054] refer to Fig.13 , which can be executed similar to Figure 6 and Figure 7 According to the operations shown in , the package structures 1 and 1A are removed or moved away from the upper structure 40A, the package structures 1 and 1A are removed or released from the support 710 , and the package structures 1 and 1A are transported out of the processing equipment 40 .

[0055] Unless otherwise specified, spatial descriptions such as "above", "below", "up", "left", "right", "lower", "top", "bottom", "vertical", "horizontal", "side", "above", "below", "upper", "above", "below", etc. are indicated relative to the orientation shown in the figure. It should be understood that the spatial descriptions used herein are for illustrative purposes only, and that embodiments of the structures described herein may be spatially configured in any orientation or manner, provided that the advantages of the embodiments of the present disclosure are not deviated by such configurations.

[0056] As used herein, the terms "approximately," "substantially," "generally," "about," and "about" are used to describe and explain minor variations. When used in conjunction with an event or circumstance, these terms may refer to instances where the event or circumstance occurred exactly as well as instances where the event or circumstance occurred very approximately. For example, when used in conjunction with a numerical value, these terms may refer to a range of variation of less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if a first numerical value is within a range of variation of less than or equal to ±10% of a second numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%, then the first numerical value may be considered to be "substantially" the same as or equal to the second numerical value. For example, "substantially" vertical can refer to an angular variation range of less than or equal to ±10° relative to 90°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.

[0057] If the displacement between the two surfaces is no more than 5 μm, no more than 2 μm, no more than 1 μm, or no more than 0.5 μm, then the two surfaces can be considered to be coplanar or substantially coplanar. If the displacement between the highest point and the lowest point of a surface is no more than 5 μm, no more than 2 μm, no more than 1 μm, or no more than 0.5 μm, then the surface can be considered to be substantially flat.

[0058] As used herein, the singular forms "a," "an," and "the" may include plural or plural referents unless the context clearly indicates otherwise.

[0059] As used herein, the terms "conductive," "electrically conductive," and "conductivity" refer to the ability to carry an electric current. Conductive materials are materials that present little or no resistance to the flow of electric current. One unit of measurement for conductivity is Siemens per meter (S / m). Typically, a conductive material is one that has a conductivity greater than about 10 4 S / m, for example at least 10 5 S / m or at least 10 6 S / m of a material. The conductivity of a material sometimes varies with temperature. Unless otherwise specified, the conductivity of a material is measured at room temperature.

[0060] In addition, amounts, ratios and other numerical values ​​are sometimes presented herein in a range format. It should be understood that such a range format is used for the sake of convenience and brevity, and should be flexibly construed to include not only the values ​​explicitly specified as the limits of the range, but also all individual values ​​or sub-ranges encompassed within the range, as if each value and sub-range were explicitly specified.

[0061] Although the present disclosure has been described and illustrated with reference to the specific embodiments of the present disclosure, these descriptions and illustrations are not restrictive. It should be understood by those skilled in the art that various changes may be made and equivalents may be replaced without departing from the true spirit and scope of the present disclosure as defined by the appended claims. The illustrations may not necessarily be drawn to scale. Due to manufacturing processes and tolerances, there may be differences between the process reproduction in the present disclosure and the actual equipment. There may be other embodiments that are not specifically described in the present disclosure. The description and drawings should be regarded as illustrative rather than restrictive. Modifications may be made to make specific situations, materials, material compositions, methods or processes suitable for the goals, spirit and scope of the present disclosure. All such modifications are deemed to be included within the scope of the appended claims. Although the disclosed method has been described herein with reference to specific operations performed in a specific order, it should be understood that these operations may be combined, subdivided or reordered to form equivalent methods without departing from the teachings of the present disclosure. Therefore, unless specifically indicated herein, the order and grouping of operations are not limitations of the present disclosure.

Claims

1. A method for manufacturing a packaging structure, comprising: providing a package structure including a first region and a second region different from the first region, wherein the package structure includes a package substrate having an active surface and a backside surface; as well as The package structure is irradiated with a first light beam along a first direction from the active surface toward the backside surface, wherein the first light beam irradiates only the first region and does not irradiate the second region. 2 . The method of claim 1 , further comprising irradiating the package structure along a second direction different from the first direction. 3 . The method of claim 2 , further comprising irradiating the package structure with a second light beam along the second direction, wherein the second light beam irradiates only the second region and does not irradiate the first region. 4 . The method of claim 2 , wherein the step of irradiating the package structure along the second direction is performed later than the step of irradiating the package structure along the first direction. 5 . The method of claim 4 , further comprising stopping irradiating the package structure along the second direction, wherein stopping irradiating the package structure along the second direction is earlier than stopping irradiating the package structure along the first direction. 6 . The method of claim 3 , wherein the packaging substrate comprises a semiconductor device and an encapsulant encapsulating the semiconductor device, and the second region is within a footprint of the semiconductor device in a top-view perspective. 7 . The method of claim 6 , wherein the first region is within a footprint of the encapsulant, and the first region partially overlaps the footprint of the semiconductor device in the top-view perspective.

8. The method of claim 1, wherein the second region comprises a homogeneous material and the first region comprises a composite material. 9 . The method according to claim 8 , wherein a light absorptivity of the first region is greater than a light absorptivity of the second region.

10. A method for manufacturing a packaging structure, comprising: providing a package structure comprising a first region and a second region different from the first region; irradiating the package structure along a first path; irradiating the package structure along a second path different from the first path; and The first region is shielded and the second region is not shielded in the second path. 11 . The method according to claim 10 , wherein the package structure comprises a semiconductor device and an encapsulant encapsulating the semiconductor device, the semiconductor device is in the second region, and the encapsulant is in the first region. 12 . The method of claim 11 , further comprising shielding a portion of the semiconductor device in the second path.

13. The method of claim 10, further comprising shielding the second region without shielding the first region in the first path. 14 . The method of claim 13 , wherein the step of shielding the first region and not shielding the second region in the second path is performed later than the step of shielding the second region and not shielding the first region in the first path. 15 . The method of claim 10 , wherein shielding the first region comprises covering a surface of an encapsulant of the package structure with an upper mask. 16 . The method of claim 15 , further comprising directing the package structure to contact the upper mask prior to irradiating the package structure.

17. A method for manufacturing a packaging structure, comprising: Providing a packaging structure comprising a first region and a light-transmitting region, wherein the light transmittance of the light-transmitting region is greater than the light transmittance of the first region; as well as The package structure is irradiated with a light beam along a first direction, wherein the light beam overlaps the first region but does not overlap the light-transmitting region. The method according to claim 17 , wherein the light absorptivity of the first region is greater than the light absorptivity of the light-transmitting region.

19. The method of claim 17, wherein the first region comprises a material having a thermal decomposition temperature lower than a thermal decomposition temperature of a material of the light-transmitting region.

20. The method of claim 17, further comprising shielding the light-transmissive region of the package structure.

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