Wafer surface treatment system and method and computer readable storage medium

Abstract

The invention provides a wafer surface treatment system and method and a computer readable storage medium, and the method comprises the steps: enabling a wafer to be borne on a supporting part at the bottom of a quick discharge groove, and enabling the wafer to be immersed below the liquid level of deionized water; discharging part of the deionized water in the quick discharging groove until the liquid level of the deionized water is not lower than the supporting piece; the first mechanical arm partially extends into the quick discharge groove, and the contact part on the first mechanical arm is not lower than the liquid level of the deionized water; enabling the contact part to be in contact with the wafer so as to enable the first mechanical arm to clamp the wafer; enabling the first mechanical arm to carry the wafer to move upwards at a relatively low first speed until the lower end of the wafer reaches the liquid level of the deionized water; and enabling the first mechanical arm to carry the wafer upwards at a second speed until the wafer is not lower than the notch of the quick arrangement groove. Through the treatment, the wafer can be fully stripped from the deionized water when being separated from the quick discharge groove, and the phenomenon that after the wafer is dried, a residual water film is dried at a fixed position within the 2mm range of the edge of the wafer to form pollutants is reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor production, and in particular relates to a wafer surface processing system and method, and a computer-readable storage medium. Background Art

[0002] A tank cleaning machine is a commonly used equipment in the wafer cleaning process. The last cleaning tank of a tank cleaning machine is generally a quick-drain tank. In the prior art, when cleaning the wafer in the quick-drain tank, the deionized water is quickly drained and the wafer is quickly pulled to a drying area. This working method can quickly drain the deionized water so that the deionized water is quickly peeled off from the surface of the wafer, and the wafer is quickly pulled, which can greatly shorten the process time and increase the machine capacity. However, the implementation of this method is prone to contamination after drying due to a small amount of water film remaining at the fixed position 01 within 2mm of the edge of the wafer 10 (specifically, near the contact position between the wafer and the support at the bottom of the quick-drain tank) (such as Figure 1 and Figure 2 shown). Summary of the invention

[0003] The object of the present invention is to provide a wafer surface processing system and method, and a computer-readable storage medium, aiming to improve the cleaning quality of the wafer and reduce the presence of contaminants on the wafer surface.

[0004] To achieve the above object, the present invention provides a wafer surface treatment method, comprising:

[0005] The wafer is placed on a support at the bottom of the quick discharge tank and submerged below the liquid level of deionized water;

[0006] Discharging part of the deionized water in the quick-drain tank so that the liquid level of the deionized water is not lower than the support member;

[0007] The first mechanical arm is partially extended into the quick discharge tank, and the contact portion of the first mechanical arm is not lower than the liquid level of the deionized water;

[0008] Making the contact portion contact the wafer so that the first robot arm clamps the wafer;

[0009] The first robot arm carries the wafer and moves upward at a first speed until the lower end of the wafer reaches the liquid surface of the deionized water; and,

[0010] The first robot arm carries the wafer and moves upward at a second speed until the wafer is not lower than a slot of the quick-release slot.

[0011] Optionally, the first speed is 0.8 mm / s to 2 mm / s, and the second speed is 150 mm / s to 253 mm / s.

[0012] Optionally, in the step of discharging part of the deionized water in the quick-drain tank so that the liquid level of the deionized water is not lower than the support member, the falling speed of the liquid level of the deionized water is 2 mm / s to 8 mm / s.

[0013] Optionally, the wafer surface treatment method further includes:

[0014] The wafer is transferred to a drying device for drying.

[0015] Optionally, the drying device comprises a box body and a negative pressure generating part, and the box body is connected to the negative pressure generating part;

[0016] The step of transferring the wafer to a drying device for drying comprises:

[0017] Transferring the wafer into the box;

[0018] The box body is evacuated by the negative pressure generating unit.

[0019] Optionally, the wafer surface treatment method further includes:

[0020] The second robot arm is moved along a preset path so that the second robot arm obtains the wafer to be cleaned from the upper wafer slot and moves the wafer to a plurality of cleaning slots corresponding to the second robot arm for cleaning;

[0021] The step of causing the second mechanical arm to move along a preset path comprises:

[0022] The preset path is divided into a plurality of different sections, and the movement speed of the second robot arm in each of the sections is controlled separately.

[0023] To achieve the above-mentioned purpose, the present invention also provides a computer-readable storage medium on which a program is stored. When the program is executed, at least part of the steps in the wafer surface processing method as described in any of the preceding items are executed.

[0024] To achieve the above-mentioned purpose, the present invention also provides a wafer surface processing system, which at least includes a cleaning device and a control unit, wherein the cleaning device includes a quick discharge slot and a first robotic arm, the bottom of the quick discharge slot is provided with a support member, and the slot wall of the quick discharge slot is also provided with a drain valve; the first robotic arm is arranged corresponding to the quick discharge slot and includes a contact portion; the control unit is communicatively connected with the first robotic arm and the drain valve, and is configured to perform at least some steps in the wafer surface processing method as described above.

[0025] Optionally, a drying device is also included, which includes a box body and a negative pressure generating part, and the negative pressure generating part is connected to the box body; the control unit is communicatively connected to the negative pressure generating part, and is configured to control the negative pressure generating part to vacuum the box body so as to dry the wafers accommodated in the box body.

[0026] Optionally, the cleaning device further comprises a film loading slot, a cleaning slot and a second mechanical arm, wherein the second mechanical arm is arranged corresponding to the film loading slot and the plurality of cleaning slots, and is configured to move between the film loading slot and the corresponding plurality of cleaning slots along a preset path;

[0027] The control unit is also communicatively connected to the second robotic arm, and is configured to divide the preset path into a plurality of different sections, and to control the movement speed of the second robotic arm in each of the sections separately, so that the second robotic arm moves at a corresponding movement speed in each of the sections.

[0028] Compared with the prior art, the wafer surface processing system and method, and the computer-readable storage medium of the present invention have the following advantages:

[0029] The wafer surface treatment method includes: placing the wafer on a support at the bottom of a quick discharge tank and immersing it below the liquid level of deionized water; draining part of the deionized water in the quick discharge tank so that the liquid level of the deionized water is not lower than the support; partially extending the first mechanical arm into the quick discharge tank so that the contact portion on the first mechanical arm is not lower than the liquid level of the deionized water; making the contact portion contact the wafer so that the first mechanical arm clamps the wafer; making the first mechanical arm carry the wafer and move upward at a first speed until the lower end of the wafer reaches the liquid level of the deionized water; and making the first mechanical arm carry the wafer and move upward at a second speed until the wafer is not lower than the notch of the quick discharge tank. In this way, the wafer can be fully peeled off from the deionized water when leaving the quick discharge tank, reducing or even avoiding the residual water film on the wafer, thereby reducing or even avoiding the phenomenon of forming pollutants due to the drying of the residual water film at a fixed position within 2mm of the wafer edge after subsequent wafer drying. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The accompanying drawings are used to better understand the present invention and do not constitute an improper limitation of the present invention.

[0031] Figure 1 It is an image of a single wafer processed by a wafer surface treatment method in the prior art under an electron microscope;

[0032] Figure 2 This is an electron microscope image of 25 stacked wafers that have been processed using a wafer surface treatment method in the prior art.

[0033] Figure 3 is a schematic structural diagram of a wafer surface processing system provided according to an embodiment of the present invention;

[0034] Figure 4 This is a flow chart of a wafer surface processing system according to an embodiment of the present invention performing super drainage and washing of a wafer;

[0035] Figure 5 is a schematic diagram of a wafer immersed below the level of a deionized liquid in a fast-discharge tank in a wafer surface treatment method provided by an embodiment of the present invention;

[0036] Figure 6 It is a schematic diagram of discharging part of the deionized water in the quick-drain tank so that the liquid level of the deionized water reaches a preset position in the wafer surface treatment method provided by one embodiment of the present invention;

[0037] Figure 7 It is a schematic diagram of a wafer surface processing method provided by an embodiment of the present invention, when a first robot arm partially extends into a quick discharge slot;

[0038] Figure 8 It is a schematic diagram of a wafer surface treatment method provided according to an embodiment of the present invention, in which a first robot arm carries a wafer and moves at a first speed until the lower end of the wafer reaches a preset position;

[0039] Fig. 9 It is a schematic diagram of a wafer surface treatment method provided by an embodiment of the present invention, in which a first robot arm carries a wafer and moves at a second speed until the wafer is not lower than a slot of a quick-displacement slot;

[0040] Fig.10 is an image of a single wafer processed by a wafer surface processing method provided by an embodiment of the present invention under an electron microscope;

[0041] Fig.11 is an image of 25 stacked wafers processed by a wafer surface processing method provided by an embodiment of the present invention under an electron microscope;

[0042] Fig.12 is a schematic diagram of drying a wafer in a wafer surface treatment method provided according to an embodiment of the present invention;

[0043] Fig.13 It is a schematic diagram of a second robot arm in a wafer surface treatment system provided by an embodiment of the present invention running at the same speed in each section, and a cleaning agent dripping onto a wafer when the second robot arm is at a wafer loading slot;

[0044] Fig.14It is a schematic diagram of the second robot arm acquiring the wafer at the upper wafer slot when the control unit in the wafer surface processing system provided according to one embodiment of the present invention respectively controls the movement speed of the second robot arm on each section of a preset path.

[0045] [Description of reference numerals is as follows]:

[0046] 10-wafer, 01-fixed position, 20-wafer surface treatment system, 100-cleaning device, 101-support, 102-robot arm body, 103-contact part, 110-upper film slot, 120-cleaning slot, 130-quick discharge slot, 140-first robot arm, 150-second robot arm, 160-third robot arm, 170-lower film slot, 200-control unit, 300-drying device, 310-box, 320-negative pressure generating part. DETAILED DESCRIPTION

[0047] The following is an explanation of the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in the present embodiment only illustrate the basic concept of the present invention in a schematic manner, and only the components related to the present invention are shown in the figure instead of being drawn according to the number, shape and size of the components in the actual implementation. The type, quantity and proportion of each component in the actual implementation can be a random change, and the component layout type may also be more complicated.

[0048] In addition, each embodiment of the following description has one or more technical features, but this does not mean that the user of the present invention must implement all the technical features in any embodiment at the same time, or can only implement part or all of the technical features in different embodiments separately. In other words, under the premise that implementation is possible, those skilled in the art can selectively implement part or all of the technical features in any embodiment according to the disclosure of the present invention and according to the design specifications or implementation requirements, or selectively implement a combination of part or all of the technical features in multiple embodiments, thereby increasing the flexibility of the implementation of the present invention.

[0049] As used in this specification, the singular forms "one", "an", and "the" include plural objects, and the plural form "a plurality" includes more than two objects, unless the content clearly indicates otherwise. As used in this specification, the term "or" is generally used in a sense that includes "and / or", unless the content clearly indicates otherwise, and the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection. It can be a mechanical connection or an electrical connection. It can be directly connected or indirectly connected through an intermediate medium, and it can be a connection between two elements or an interactive relationship between two elements. Relational terms such as the terms "first", "second", etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations, nor do they indicate or imply relative importance or implicitly indicate the number of technical features indicated. It should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0050] In order to make the purpose, advantages and features of the present invention more clear, the present invention is further described in detail below with reference to the accompanying drawings. It should be noted that the drawings are all in very simplified form and in non-precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. The same or similar reference numerals in the drawings represent the same or similar components.

[0051] Figure 3 FIG. 2 is a schematic diagram showing the structure of a wafer surface processing system 20 provided by some embodiments of the present invention. Figure 3 As shown, the wafer surface treatment system 20 includes a cleaning device 100. The cleaning device 100 includes at least one wafer loading slot 110, multiple cleaning slots 120, a quick-discharge slot 130, a first robot arm 140, and a second robot arm 150. The wafer loading slot 110, multiple cleaning slots 120, and the quick-discharge slot 130 are arranged in sequence, the first robot arm 140 is arranged at least corresponding to the quick-discharge slot 130, and the second robot arm 150 is arranged corresponding to the wafer loading slot 110 and multiple cleaning slots 120.

[0052] It can be understood that the bottom of the cleaning tank 120 and the quick discharge tank 130 are both provided with a support member 101 for carrying the wafer 10, and a drain valve (not shown in the figure) is also provided on the side wall or bottom wall of the quick discharge tank 130. The first robot 140 and the second robot 150 have basically the same structure, both including a robot body 102 and a plurality of contact parts 103 provided on the robot body 102. When all the contact parts 103 on the same robot body 102 are in contact with the wafer 10, the corresponding robot clamps the wafer 10 and can carry the wafer 10. The support member 101 includes but is not limited to rollers. The contact part 103 includes but is not limited to rollers.

[0053] The second robot arm 150 is used to move along a preset path to obtain the wafer 10 to be cleaned from the loading tank 110 and move the wafer 10 to be cleaned to the corresponding cleaning tank 120 for cleaning. The first robot arm 140 works at least when the wafer 10 is super-drained and rinsed.

[0054] Those skilled in the art know that each of the cleaning tanks 120 contains one of O3W cleaning agent (i.e., ozone aqueous solution with a predetermined concentration), HF cleaning agent, SC1 cleaning agent, SC2 cleaning agent, and deionized water as needed. The fast drain tank 130 is used to contain deionized water to perform the super drain flushing operation.

[0055] The wafer surface treatment system 20 further includes a control unit 200, which is at least in communication with the first robot arm 140 and the drain valve, and is configured to execute at least some steps in the super drain rinsing operation of the wafer 10. Figure 4 As shown, including:

[0056] Step S1, using any appropriate components and operations to transport the wafer 10 to the quick discharge tank 130, and the wafer 10 is supported on the support member 101 at the bottom of the quick discharge tank 130, so that the wafer 10 is immersed below the liquid level of the deionized water in the quick discharge tank 130 (such as Figure 5 In addition, the “suitable components” herein do not include the first robot arm 140.

[0057] Step S2: The control unit 200 controls the drain valve to open to drain part of the deionized water in the quick drain tank 130 until the liquid level of the deionized water reaches a preset position (such as Figure 6 The preset position is not lower than the support member 101, thereby preventing the support member 101 from being exposed to air and contaminated.

[0058] Step S3: The control unit 200 controls the first mechanical arm 140 to move and partially extend into the quick release slot 130, and makes the contact portion 103 of the first mechanical arm 140 not lower than the preset position (such as Figure 7 As shown). In this way, the portion of the first robot arm 140 that is in contact with the wafer 10 and the portion of the first robot arm 140 that is located above the wafer 10 are not in contact with the deionized water.

[0059] Step S4 , the control unit 200 controls the first robot arm 140 to move until all the contact portions 103 of the first robot arm 140 are in contact with the wafer 10 , so that the first robot arm 140 clamps the wafer 10 .

[0060] Step S5: The control unit 200 controls the first robot arm 140 to carry the wafer 10 and move upward at a first speed v1 until the lower end of the wafer 10 reaches the preset position (eg, Figure 8 shown).

[0061] Step S6, the control unit 200 controls the first robot arm 140 to carry the wafer 10 and move upward at a second speed v2 until the wafer 10 is not lower than the slot of the fast-discharge slot 130 (such as Fig. 9 shown).

[0062] In the above-mentioned super drainage and flushing operation, since the portion of the first robot 140 that is used to contact the wafer 10 and the portion of the first robot 140 that is located above the portion that is in contact with the wafer 10 are not in contact with deionized water, the first robot 140 will not introduce deionized water onto the surface of the wafer 10 when clamping the wafer 10. Moreover, in the step S5, the wafer 10 has enough time to be peeled off from the deionized water to avoid the presence of a water film after the wafer 10 is separated from the deionized water, thereby preventing contaminants (such as pollutants) from forming at the fixed position within 2 mm of the edge of the wafer 10 after subsequent drying (mainly near the contact position between the wafer 10 and the support 101 at the bottom of the quick drainage slot 130). Fig.10 and Fig.11 shown).

[0063] Preferably, the second speed v2 is greater than the first speed v1, so that the execution time of the step S6 can be shortened, thereby shortening the process time of the super drainage flushing and improving the machine capacity.

[0064] Optionally, the first speed v1 can be selected within a range of not less than 0.8 mm / s and not more than 2 mm / s, and the second speed v2 can be selected within a range of not less than 150 mm / s and not more than 253 mm / s.

[0065] In addition, when the deionized water in the quick discharge tank 130 is discharged, the falling speed of the liquid level of the deionized water is not less than 2 mm / s and not more than 8 mm / s.

[0066] In further improvements, return to reference Figure 3 Combined with Fig.12 The wafer surface treatment system 20 further includes a drying device 300, and the first robot arm 140 is also arranged corresponding to the drying device 300, and is configured to carry the wafer 10 to the drying device 300 for drying under the control of the control unit 200. Preferably, the drying device 300 is arranged on a side of the quick discharge tank 130 away from the cleaning tank 120.

[0067] Optionally, the drying device 300 includes a box 310 and a negative pressure generating unit 320. The box 310 is preferably arranged on a side of the quick discharge tank 130 away from the cleaning tank 120, and is used to accommodate the wafer 10. The negative pressure generating unit 320 is in communication with the quick discharge tank 130. The control unit 200 is also in communication connection with the negative pressure generating unit 320, and is configured to control the negative pressure generating unit 320 to generate negative pressure, so as to evacuate the box 310, and then dry the wafer 10 accommodated in the box 310. Compared with the traditional infrared lamp irradiation drying method, this drying method is more uniformly heated and free from metal contamination, further improves the cleanliness of the wafer 10, and also improves the drying speed. At the same time, the service life of this drying device 300 is longer, and the cavity opening operation when the infrared lamp is replaced is reduced. Those skilled in the art also know that the infrared drying method has the problem of uneven heating of the wafer, resulting in small-sized liquid stains remaining and inaccurate detection.

[0068] Next, the wafer surface processing system 20 is further described in detail through a specific example.

[0069] Continue to refer Figure 3 , the cleaning device 100 of the wafer surface processing system 20 may include ten cleaning tanks 120, and further include two third robotic arms 160. It can be understood that in other examples, the number of the cleaning tanks 120 may be more or less than ten, and the number of the third robotic arms 160 may be more or less than two, and the technical personnel in the field may modify the following description according to the actual number of the cleaning tanks 120 and the actual number of the third robotic arms 160 to adapt to the actual situation.

[0070] The ten cleaning tanks 120 are Figure 3 In the orientation shown, they are arranged in sequence from left to right. For the convenience of description, the ten cleaning tanks 120 are respectively referred to as cleaning tank a, second cleaning tank b, cleaning tank c, cleaning tank d, cleaning tank e, cleaning tank f, cleaning tank g, cleaning tank h, cleaning tank i, and cleaning tank j from left to right. In addition, the two third robotic arms 160 are also respectively referred to as third robotic arms a and third robotic arms b.

[0071] The loading slot 110 is preferably disposed on the left side of the cleaning slot a, and the quick discharge slot 130 is preferably disposed on the right side of the cleaning slot j.

[0072] The second robot arm 150 is also arranged corresponding to the cleaning tank a, the cleaning tank b, and the cleaning tank c, so that the second robot arm 150 can move the wafer 10 from the loading tank 110 to the cleaning tank a, the cleaning tank b, and the cleaning tank c in sequence.

[0073] The third robot arm a is disposed corresponding to the cleaning tank c, the cleaning tank d, the cleaning tank e, the cleaning tank f, and the cleaning tank g. Accordingly, the third robot arm a can sequentially carry the wafer 10 from the cleaning tank c to the cleaning tank d, the cleaning tank e, the cleaning tank f, and the cleaning tank g.

[0074] The third robot arm b is at least arranged corresponding to the cleaning tank g, the cleaning tank h, the cleaning tank i, and the cleaning tank j. Accordingly, the third robot arm b can at least carry the wafer 10 from the cleaning tank g to the cleaning tank h, the cleaning tank i, and the cleaning tank j in sequence. Further, the third robot arm b also corresponds to the fast-discharge tank 130, so that the third robot arm b can carry the wafer 10 from the cleaning tank j to the fast-discharge tank 130.

[0075] Therefore, the process of performing surface treatment on the wafer 10 by using the wafer surface treatment system 20 is as follows:

[0076] First, the second robot arm 150 is used to obtain the wafer 10 to be cleaned from the loading tank 110 , and the wafer 10 is sequentially transferred to the cleaning tank a, the cleaning tank b, and the cleaning tank c for cleaning.

[0077] Next, the third robot a is used to sequentially transfer the wafer 10 from the cleaning tank c to the cleaning tank d, the cleaning tank e, the cleaning tank f, and the cleaning tank g for cleaning.

[0078] Next, the third robot arm b is used to sequentially transfer the wafer 10 from the cleaning tank g to the cleaning tank h, the cleaning tank i, and the cleaning tank j for cleaning.

[0079] Next, the wafer is subjected to a super drainage and rinsing operation according to the aforementioned steps S1 to S6 . In the step S1 , the third robot arm b moves the wafer 10 to the quick drainage tank 130 .

[0080] Next, the control unit 200 controls the first robot arm 140 to carry the wafer 10 to the box 310 , and controls the negative pressure generating unit 320 to evacuate the box 310 .

[0081] It can be understood that the wafer surface treatment system 20 can also include a lower wafer slot 170, which is, for example, disposed on one side of the box body 310, and the first robot arm 140 can also be disposed corresponding to the lower wafer slot 170. In this way, after the wafer 10 is dried, the control unit 200 can also control the first robot arm 140 to move the wafer 10 to the lower wafer slot 170.

[0082] Furthermore, the control unit 200 is also connected to the second robotic arm 150 and the third robotic arm 160 for communication, and controls the movement of the second robotic arm 150 and the third robotic arm 160 .

[0083] As mentioned above, the second robot arm 150 moves along a preset path between the loading tank 110 and the corresponding cleaning tank 120 .

[0084] In some examples, the control unit 200 uniformly controls the movement speed of the second robot 150 at different positions of the preset path, so that the second robot 150 has a constant movement speed throughout the entire range of the preset path. In this case, the following situation is likely to occur: during the process of the second robot 150 moving from its corresponding cleaning tank 120 to the loading tank 110 to obtain the wafer 10 to be cleaned, the cleaning agent on the second robot 150 is not fully stripped off, resulting in a small amount of cleaning agent still remaining on it. In this way, when the second robot 150 arrives at the loading tank 110, the cleaning agent remaining on the second robot 150 drips in a vertical downward direction and adheres to the wafer 10 in the loading tank 110 (such as Fig.13 As shown in FIG. 1 , the cleaning agent attached to the wafer 10 may not be completely removed during the subsequent cleaning process. Thus, the cleaning agent that is not completely removed forms a linear contamination pattern after the wafer 10 is dried.

[0085] In view of this, in the embodiment of the present invention, the control unit 200 preferably divides the preset path into a plurality of different sections, and also controls the movement speed of the second robot arm 150 on each of the sections respectively, so as to allow the movement speed of the second robot arm 150 on each section to be reasonably adjusted according to actual conditions, thereby ensuring that when the second robot arm 150 arrives at the upper wafer slot 110, the cleaning agent thereon has been fully stripped off. In this way, when the second robot arm 150 arrives at the upper wafer slot 110 and obtains the wafer 10 to be cleaned, the cleaning agent will not drip from the second robot arm 150 and adhere to the wafer 10 (such as Fig.14 shown).

[0086] It can be understood that by controlling the movement of the second robotic arm 150 in each of the sections separately through the control unit 200, the movement speed of the second robotic arm 150 in each of the sections can be made the same, or the movement speed of the second robotic arm 150 in each of the sections can be at least partially different, depending on actual needs.

[0087] For example, in a non-limiting embodiment, the second robot arm 150 is provided corresponding to the three cleaning tanks 120, such as the cleaning tank a, the cleaning tank b, and the cleaning tank c. Thus, the preset path may be: moving from the loading tank 110 to the cleaning tank a in the horizontal direction → moving in the vertical direction at the cleaning tank a → moving from the cleaning tank a to the cleaning tank b in the horizontal direction → moving in the vertical direction at the cleaning tank b → moving from the cleaning tank b to the cleaning tank c in the horizontal direction → moving in the vertical direction at the cleaning tank c → moving from the cleaning tank c to the cleaning tank b in the horizontal direction → moving from the cleaning tank b to the cleaning tank a in the horizontal direction → moving from the cleaning tank a to the loading tank 110 in the horizontal direction → moving in the vertical direction at the loading tank 110.

[0088] Correspondingly, the control unit 200 can divide the preset path into the following ten sections: ① The first section: moving from the upper film slot 110 to the cleaning slot a in the horizontal direction; ② The second section: moving in the vertical direction at the cleaning slot a; ③ The third section: moving from the cleaning slot a to the cleaning slot b in the horizontal direction; ④ The fourth section: moving in the vertical direction at the cleaning slot b; ⑤ The fifth section: moving from the cleaning slot b to the cleaning slot c in the horizontal direction; ⑥ The sixth section: moving in the vertical direction at the cleaning slot c; ⑦ The seventh section: moving from the cleaning slot c to the cleaning slot b in the horizontal direction; ⑧ The eighth section is moving from the cleaning slot b to the cleaning slot a in the horizontal direction; ⑨ The ninth section: moving from the cleaning slot a to the upper film slot 110 in the horizontal direction; ⑩ The tenth section: moving in the vertical direction at the upper film slot 110.

[0089] Optionally, the control unit 200 controls the movement speed of the second robotic arm 150 in the ninth section to be lower than the movement speed in other sections, for example, controls the movement speed of the second robotic arm 150 in the ninth section to be 150 mm / s to 180 mm / s, and controls the movement speed of the second robotic arm 150 in other sections to be 280 mm / s to 310 mm / s.

[0090] Furthermore, an embodiment of the present invention also provides a wafer surface processing method, which is performed based on the aforementioned wafer surface processing system 20 and at least includes the aforementioned steps S1 to S6.

[0091] Optionally, the wafer surface treatment method further includes step S7, and the step S7 includes drying the wafer 10 taken out from the quick discharge slot 130, which may specifically include transporting the wafer 10 to the box 310 and allowing the negative pressure generating unit 320 to vacuum the box 310.

[0092] Optionally, the wafer surface treatment method further includes step S8, which includes controlling the second robot arm 150 to move along the preset path to obtain the wafer 10 to be cleaned from the wafer loading slot 110, and moving the wafer 10 to the cleaning slot 120 corresponding to the second robot arm 150 for cleaning. In step S8, the preset path is further divided into a plurality of different sections, and the movement speed of the second robot arm 150 in each section is controlled respectively, so that the second robot arm 150 moves at a corresponding speed on each section.

[0093] Furthermore, an embodiment of the present invention also provides a computer-readable storage medium, on which a program is stored. When the program is executed, at least some steps in the aforementioned wafer surface treatment method are executed, for example, step S2 to step S6 are executed, and step S1 can be further executed, and at least one of step S7 and step S8 can be further executed.

[0094] Although the present invention is disclosed as above, it is not limited thereto. Those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A wafer surface treatment method, characterized in that: include: The wafer is placed on a support at the bottom of the quick discharge tank and submerged below the liquid level of deionized water; Discharging part of the deionized water in the quick-drain tank so that the liquid level of the deionized water is not lower than the support member; The first mechanical arm is partially extended into the quick discharge tank, and the contact portion of the first mechanical arm is not lower than the liquid level of the deionized water; Making the contact portion contact the wafer so that the first robot arm clamps the wafer; The first robot arm carries the wafer and moves upward at a first speed until the lower end of the wafer reaches the liquid surface of the deionized water; as well as, The first robot arm carries the wafer and moves upward at a second speed until the wafer is not lower than a slot of the quick-release slot.

2. The wafer surface treatment method according to claim 1, characterized in that: The second speed is greater than the first speed; the first speed is 0.8 mm / s to 2 mm / s, and the second speed is 150 mm / s to 253 mm / s.

3. The wafer surface treatment method according to claim 1, characterized in that: In the step of discharging part of the deionized water in the quick-discharge tank so that the liquid level of the deionized water is not lower than the support member, the descending speed of the liquid level of the deionized water is 2 mm / s to 8 mm / s.

4. The wafer surface treatment method according to claim 1, characterized in that: The wafer surface treatment method further comprises: The wafer is transferred to a drying device for drying.

5. The wafer surface treatment method according to claim 4, characterized in that: The drying device comprises a box body and a negative pressure generating part, wherein the box body is connected to the negative pressure generating part; The step of transferring the wafer to a drying device for drying comprises: Transferring the wafer into the box; The box body is evacuated by the negative pressure generating unit.

6. The wafer surface treatment method according to any one of claims 1 to 5, characterized in that: The wafer surface treatment method further comprises: The second robot arm is moved along a preset path so that the second robot arm obtains the wafer to be cleaned from the upper wafer slot and moves the wafer to a plurality of cleaning slots corresponding to the second robot arm for cleaning; The step of causing the second mechanical arm to move along a preset path comprises: The preset path is divided into a plurality of different sections, and the movement speed of the second robot arm in each of the sections is controlled separately.

7. A computer-readable storage medium having a program stored thereon, characterized in that: When the program is executed, at least part of the steps in the wafer surface processing method according to any one of claims 1 to 6 are performed.

8. A wafer surface processing system, characterized in that: The method comprises at least a cleaning device and a control unit, wherein the cleaning device comprises a quick discharge tank and a first robot arm, a support is provided at the bottom of the quick discharge tank, and a drain valve is provided on the wall of the quick discharge tank; the first robot arm is arranged corresponding to the quick discharge tank and comprises a contact portion; the control unit is communicatively connected with the first robot arm and the drain valve, and is configured to perform at least some steps in the wafer surface treatment method as described in claim 1.

9. The wafer surface processing system according to claim 8, characterized in that: It also includes a drying device, which includes a box and a negative pressure generating part, and the negative pressure generating part is connected to the box; the control unit is communicatively connected to the negative pressure generating part, and is configured to control the negative pressure generating part to vacuum the box to dry the wafers accommodated in the box.

10. The wafer surface processing system according to claim 8, characterized in that: The cleaning device further comprises a film loading slot, a cleaning slot and a second mechanical arm, wherein the second mechanical arm is arranged corresponding to the film loading slot and the plurality of cleaning slots, and is configured to move between the film loading slot and the corresponding plurality of cleaning slots along a preset path; The control unit is also communicatively connected to the second robotic arm, and is configured to divide the preset path into a plurality of different sections, and to control the movement speed of the second robotic arm in each of the sections separately, so that the second robotic arm moves at a corresponding movement speed in each of the sections.

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