Semiconductor device
By setting a widening end and expansion section in the glue output channel of the semiconductor device, the problem of abnormal airtightness of the semiconductor device is solved, and more complete packaging glue filling and higher airtightness are achieved.
Patent Information
- Application Number
- CN202411463135.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-18
- Publication Date
- 2025-02-25
- Estimated Expiration
- 2044-10-18
AI Technical Summary
Existing semiconductor devices prepared in metal cermet packaging often detect abnormal airtightness during airtightness detection.
By setting a widened end and corresponding expansion sections in the rubber outlet channel, the fluidity of the packaging glue in the rubber outlet channel is improved, and the rubber outlet channel is fully filled, and the airtightness of the semiconductor device is improved.
The overflow effect of the packaging glue through the rubber outlet channel is improved, so that the packaging glue can fill the rubber outlet channel more fully during the overflow process, thereby improving the airtightness of the semiconductor device.
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Figure CN119517856A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor packaging technology, and in particular to a semiconductor device. Background Art
[0002] Metal ceramic packaging has good heat dissipation and insulation properties and is often used to prepare semiconductor devices. Generally, the semiconductor device prepared by metal ceramic packaging includes a tube shell, a conductive pin, a tube core, a cover plate and a packaging glue. Among them, the tube shell is provided with a receiving groove, and the end surface of the side wall of the receiving groove extending around the opening of the receiving groove is formed into a first annular end surface. A plurality of conductive pins are arranged on the first annular end surface and are distributed around the opening of the receiving groove. The tube core is arranged in the receiving groove. The cover plate is arranged on the receiving groove; the packaging glue is arranged between the conductive pin and the cover plate and between the spaced conductive pins.
[0003] However, the existing semiconductor device products prepared by metal ceramic packaging often have abnormal airtightness when the airtightness of the products is tested. Therefore, how to improve the airtightness of semiconductor devices is still a technical problem that needs to be solved urgently by those skilled in the art. Summary of the invention
[0004] In view of this, in order to solve the above technical problems, the present application provides a semiconductor device.
[0005] To achieve the above object, the present application provides a semiconductor device, which includes: The tube shell is provided with a receiving groove, and the receiving groove is provided with a tube core; the end surface of the side wall of the receiving groove extending around the opening of the receiving groove is formed into a first annular end surface; A plurality of conductive pins are arranged on the first annular end surface and are spaced apart around the opening of the accommodating groove; two adjacent edges of two adjacent conductive pins are spaced apart to form a glue outlet channel; and a cover plate and packaging glue, wherein the cover plate is arranged on the containing groove, and the packaging glue is arranged between the conductive pin and the cover plate and in the glue outlet channel; Among them, the two ends of the glue outlet channel along the length direction of the glue outlet channel are respectively the first glue outlet end and the second glue outlet end; the first glue outlet end and / or the second glue outlet end are formed as widened ends; the glue outlet channel is formed with an expansion section corresponding to the widened end, and the expansion section is connected to the corresponding widened end; and along the direction toward the corresponding widened end, the width of the expansion section gradually expands.
[0006] Beneficial effect: Different from the prior art, the present application can improve the fluidity of the packaging glue in the glue outlet channel during the preparation of semiconductor devices by setting a widened end and a corresponding expansion section in the glue outlet channel, thereby improving the overflow effect of the packaging glue through the glue outlet channel, so that the packaging glue can more fully fill the glue outlet channel during the overflow process, thereby improving the airtightness of the semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Figure 1 is a schematic cross-sectional structure diagram of a semiconductor device according to Embodiment 1 of the present application; Figure 2 yes Figure 1 A schematic diagram of the annotation of the first area and the second area; Figure 3 It is a schematic diagram of an assembly structure of a tube shell, a welding pad layer and a conductive pin of a semiconductor device according to a first embodiment of the present application from one perspective; Figure 4 It is a schematic diagram of the assembly structure of the tube shell, welding pad layer and conductive pins of the semiconductor device of the first embodiment of the present application from another perspective; Figure 5 yes Figure 4 A magnified schematic diagram of the middle area A; Figure 6 yes Figure 4 Schematic diagram of the marking area where the glue outlet channel is located. Figure 6 The area where the middle glue outlet channel is located is the pattern-filled area; Figure 7 yes Figure 4 Schematic diagram of the area where the Zhongyi expansion section is located. Figure 7 The area where the middle expansion segment is located is the pattern-filled area; Figure 8 yes Figure 4 A schematic diagram showing the area where another expansion section is located. Figure 8 The area where the middle expansion segment is located is the pattern-filled area; Fig. 9 yes Figure 4 Schematic diagram of the area where the central connecting part is located. Fig. 9 The area where the middle connected part is located is the pattern filling area; Fig.10 yes Figure 4 A schematic diagram of identification of the first endpoint and the second endpoint; Fig.11 yes Figure 4 Dimensioning diagram of Fig.12 is a schematic diagram of a partial structure of a semiconductor device according to Embodiment 3 of the present application; Fig.13 is a schematic diagram of a partial structure of a semiconductor device according to a fourth embodiment of the present application; Fig.14 is a schematic diagram of a partial structure of a first semiconductor device; Fig.15 is a packaging effect diagram of a first semiconductor device; Fig.16 is a packaging effect diagram of a second semiconductor device; Semiconductor device 1; tube shell 10; accommodating groove 11; heat sink plate 12; ceramic insulating ring 13; first annular end face 14; inner ring edge 14-1; outer ring edge 14-2; groove 15; second annular end face 16; cavity 17; conductive pin 20; connecting portion 21; extension portion 22; protruding end 23; tube core 30; cover plate 40; packaging glue 50; bonding wire 60; welding pad 70; first gap 71; glue outlet channel 100; first glue outlet end 110; connecting portion 120; connecting port 120a; connecting section 1 20b; second glue outlet end 130; widened end 140; expansion section 150; first expansion section 150a; second expansion section 150b; first edge 200; second edge 300; expansion edge 41; first endpoint B1; second endpoint B2; connecting edge 42; first region P1; second region P2; first distance d1; length d2 of expansion section; first length s1; first width w1; second width w2; third width w3; fourth width w4; first semiconductor device 1a; second semiconductor device 1b. DETAILED DESCRIPTION
[0008] In order to enable those skilled in the art to better understand the technical solution of the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described implementation methods are only part of the implementation methods of the present application, rather than all the implementation methods. Based on the implementation methods in the present application, all other implementation methods obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present application.
[0009] The inventors have found that in the existing semiconductor devices prepared by metal ceramic packaging, the sealing between two adjacent conductive pins is poor, resulting in the problem of abnormal airtightness often being detected when performing airtightness testing on the semiconductor devices. In order to solve the above technical problems, the inventors of this application propose the following embodiments.
[0010] It should be noted that, for any values x1 and x2, if x2>x1, then x1~x2 in the following text means not less than x1 and not greater than x2.
[0011] Embodiment 1 See also Figure 1-Figure 10 The semiconductor device 1 of the present embodiment includes a tube shell 10 , a tube core 30 , a conductive pin 20 , a cover plate 40 and a packaging adhesive 50 .
[0012] The tube shell 10 is provided with a receiving groove 11, and the receiving groove 11 is provided with a tube core 30. The end surface of the side wall of the receiving groove 11 extending around the opening of the receiving groove 11 is formed into a first annular end surface 14. A plurality of conductive pins 20 are arranged on the first annular end surface 14 and are distributed around the opening of the receiving groove 11. The two adjacent edges of two adjacent conductive pins 20 are spaced apart to form a glue outlet channel 100. The cover plate 40 is covered on the receiving groove 11. The packaging glue 50 is arranged between the conductive pins 20 and the cover plate 40 and in the glue outlet channel 100.
[0013] The two ends of the glue outlet channel 100 along the length direction of the glue outlet channel 100 are respectively a first glue outlet end 110 and a second glue outlet end 130. The first glue outlet end 110 and / or the second glue outlet end 130 are formed as a widened end 140. The glue outlet channel 100 is formed with an expansion section 150 corresponding to the widened end 140, and the expansion section 150 is connected to the corresponding widened end 140. And along the direction toward the corresponding widened end 140, the width of the expansion section 150 gradually increases.
[0014] In the above manner, during the preparation of the semiconductor device 1, the encapsulation glue 50 still has fluidity when the cover plate 40 is pressed against the tube shell 10. The present embodiment can improve the fluidity of the encapsulation glue 50 in the glue outlet channel 100 by widening the end 140, thereby improving the overflow effect of the encapsulation glue 50 through the glue outlet channel 100, so that the encapsulation glue 50 can more fully fill the glue outlet channel 100 during the overflow process, thereby improving the airtightness of the semiconductor device 1.
[0015] Optionally, looking down at the first annular end face 14 from the side of the conductive pin 20 facing away from the first annular end face 14, the ring shape of the first annular end face 14 can be a rectangular ring, an elliptical ring, a circular ring, a triangular ring, a fan-shaped ring, a trapezoidal ring, or other regular or irregular ring shapes.
[0016] For ease of explanation, the following description is made by taking the first annular end surface 14 as an example of a rectangular ring. At this time, when looking down at the receiving groove 11 from the side of the conductive pin 20 facing away from the first annular end surface 14, the opening of the receiving groove 11 is rectangular. Among them, the plurality of conductive pins 20 can be distributed in the first annular end surface 14 at the two opposite sides of the rectangular opening of the receiving groove 11, but is not limited thereto.
[0017] It can be understood that after the encapsulation glue 50 flows into the glue outlet channel 100, as the cover plate 40 continues to be pressed against the tube shell 10, the encapsulation glue 50 between the cover plate 40 and the first annular end face 14 is squeezed, and part of the encapsulation glue 50 will flow out through the glue outlet channel 100, and in this process, the encapsulation glue 50 can more fully fill the glue outlet channel 100. It should be noted that in the subsequent process of preparing the semiconductor device 1, the fluid encapsulation glue 50 will solidify and then form a non-fluid encapsulation glue 50, so that the encapsulation glue 50 in the finally prepared semiconductor device 1 is the encapsulation glue 50 after solidification.
[0018] Alternatively, if Figure 1-Figure 10 As shown, the semiconductor device 1 includes a bonding wire 60 , and a groove 15 is provided on one side of the cover plate 40 facing the receiving groove 11 . The end surface of the side wall of the groove 15 extending around the opening of the groove 15 is formed into a second annular end surface 16 .
[0019] The first annular end face 14 has an inner ring edge 14-1 close to the receiving groove 11 and an outer ring edge 14-2 away from the receiving groove 11. The portion of the conductive pin 20 covering the first annular end face 14 has a first area P1 close to the inner ring edge 14-1 and a second area P2 away from the inner ring edge 14-1. The groove 15 is connected to the receiving groove 11 to form a cavity 17. The second annular end face 16 is arranged corresponding to the first annular end face 14 and covers the second area P2 of the conductive pin 20, and the first area P1 of the conductive pin 20 is located in the cavity 17. The die 30 is bonded to the first area P1 of the conductive pin 20 through the bonding wire 60.
[0020] In the above manner, the bonding wire 60, the tube core 30 and the first area P1 of the conductive pin 20 are all located in the cavity, and the position between the first annular end surface 14 and the second annular end surface 16 is sealed by the packaging glue 50 between the second area P2 of the conductive pin 20 and the second annular end surface 16 and the packaging glue 50 in the glue outlet channel 100. In this way, when the cover plate 40 is pressed against the tube shell 10, the second annular end surface 16 can avoid the bonding wire 60, so that the bonding wire 60 can be prevented from being broken by the second annular end surface 16.
[0021] It should be noted that, in the process of preparing the semiconductor device 1, before the cover plate 40 is pressed against the tube shell 10, the packaging glue 50 is arranged on the second annular end surface 16 of the cover plate 40 in a circular continuous distribution manner. When the cover plate 40 is pressed against the tube shell 10, the packaging glue 50 distributed on the second annular end surface 16 contacts the second area P2 and avoids the first area P1.
[0022] By way of example and not limitation, Figure 1-Figure 11 As shown, the width of the widened end 140 is the second width w2, and the second width w2 is 0.5-5 mm.
[0023] It should be noted that the above method has at least the following two beneficial effects. On the one hand, since the second width is not greater than 5 mm, after the second area P2 of the connection part 21 contacts the packaging glue 50, the connection part 21 still has a first area P1 sufficient for bonding with the bonding wire 60. On the other hand, since the second width is not less than 0.5 mm, during the preparation of the semiconductor device 1, when the cover plate 40 is pressed against the tube shell 10, the packaging glue 50 in the glue outlet channel 100 is more likely to flow out through the corresponding widened end 140 under the guidance of the expansion section 150, so that the packaging glue 50 is fully filled in the glue outlet channel, so that the packaging glue 50 has better sealing performance after solidification. Preferably, the second width w2 is 1~2 mm.
[0024] Optionally, the die 30 includes, but is not limited to, active components or passive components. Active components include, but are not limited to, one or more of transistors, microprocessors, memories, and radio frequency chips. Passive components include, but are not limited to, one or more of capacitors, inductors, and resistors.
[0025] Alternatively, if Figure 1-Figure 10 As shown, two adjacent edges of two adjacent conductive pins 20 are respectively a first edge 200 and a second edge 300 .
[0026] The first edge 200 and the second edge 300 are both formed with an expansion edge 41, wherein the edges of the expansion section 150 on both sides separated by the width direction of the glue outlet channel 100 are formed by the expansion edges 41 of the first edge 200 and the second edge 300. In the above manner, during the process of manufacturing the semiconductor device 1, the packaging glue 50 flowing into the glue outlet channel 100 can be guided by the expansion edge 41 to adapt to the width change of the expansion section 150 and fill the expansion section 150.
[0027] Alternatively, if Figure 1-Figure 10 As shown, the expansion edge 41 includes any one of a bevel edge and a curved edge or a combination of both, so that the width of the expansion section 150 gradually increases in a direction toward the corresponding widened end 140 .
[0028] By way of example and not limitation, in a first example, the expansion edge 41 may be a beveled edge. In a second example, the expansion edge 41 may be a curved edge. Alternatively, in the second example, the curved edge used as the expansion edge 41 may be an arc edge. Alternatively, in the second example, the curved edge used as the expansion edge 41 may be other curved edges other than arcs. In a third example, the expansion edge 41 may be a combination of a beveled edge and a curved edge.
[0029] Alternatively, if Figure 1-Figure 11As shown, the length of the glue outlet channel 100 is a first length s1, and the first length s1 is 1-2 mm. For example but not limitation, the first length s1 includes but is not limited to 1.00 mm, 1.50 mm or 2.00 mm.
[0030] It should be noted that the above method has at least the following two beneficial effects. On the one hand, since the first length s1 is not greater than 2 mm, the volume of the encapsulation glue 50 required to fill the glue outlet channel 100 is reduced. In this way, the amount of encapsulation glue 50 used can be reduced, and the reduction in the amount of encapsulation glue 50 used is conducive to reducing the difficulty of the packaging process. On the other hand, since the first length s1 is not less than 1 mm, after the second area P2 of the connecting portion 21 contacts the encapsulation glue 50, the connecting portion 21 still has a first area P1 sufficient for bonding with the bonding wire 60.
[0031] Further, the first length s1 is 1.25-1.45 mm. By way of example and not limitation, the first length s1 includes but is not limited to 1.25 mm, 1.35 mm or 1.45 mm.
[0032] like Figure 1-Figure 11 As shown, from one end of the expansion segment 150 away from the corresponding widened end 140 to one end of the expansion segment 150 close to the corresponding widened end 140 , the expansion edge 41 sequentially connects the first endpoint B1 and the second endpoint B2 .
[0033] The distance between the first end point B1 and the second end point B2 along the width direction of the glue outlet channel 100 is a first distance d1, and the first distance d1 is not greater than 1 mm.
[0034] Through the above method, at least the following two beneficial effects are achieved. On the one hand, since the first distance d1 is not greater than 1 mm, the volume of the packaging glue 50 required to fill the glue outlet channel 100 is reduced. In this way, the amount of packaging glue 50 used can be reduced, and the reduction in the amount of packaging glue 50 used is conducive to reducing the difficulty of the packaging process. On the other hand, since the first distance d1 is not greater than 1 mm, after the second area P2 of the connecting portion 21 contacts the packaging glue 50, the connecting portion 21 still has a first area P1 sufficient for bonding with the bonding wire 60.
[0035] Alternatively, if Figure 1-Figure 11 As shown, the length d2 of the expansion section 150 is the distance between the first end point B1 and the second end point B2 along the length direction of the glue outlet channel 100. The ratio of the first distance d1 to the length d2 of the expansion section 150 is a second ratio, and the second ratio is 1:3-2:1.
[0036] It should be noted that, considering that the first length s1 of the glue outlet channel 100 is limited, if the second ratio is too large, it is easy to cause the first distance d1 to be too small, making it difficult for the packaging glue 50 in the glue outlet channel 100 to flow out of the widened end 140. Preferably, the second ratio is 1:2 to 1:1. Furthermore, the second ratio is 1:2 to 1:1.1. For example, the second ratio includes but is not limited to 1:1.2.
[0037] Optionally, combined Figure 1-Figure 9 , see Figure 10-11 As shown, the ratio of the length d2 of the expansion section 150 to the first length s1 is a first ratio, and the first ratio is not less than 0.2.
[0038] In the above manner, since the first ratio is not less than 0.2, when the first length s1 of the glue outlet channel 100 is limited, the expansion section 150 has a sufficient length to facilitate the packaging glue 50 to flow out from the widened end 140 when the cover plate 40 is pressed against the tube shell 10 during the preparation of the semiconductor device 1.
[0039] Optionally, combined Figure 1-Figure 9 , see Figure 10-11 As shown, the width of the end of the expansion section 150 away from the corresponding widened end 140 is the first width w1, and the first width w1 is not less than 0.1 mm. It should be noted that if the first width w1 is less than 0.1 mm, when the cover plate 40 is pressed against the tube shell 10 during the preparation of the semiconductor device 1, it is not conducive to the circulation of the packaging glue 50.
[0040] Optionally, combined Figure 1-Figure 9 , see Figure 10-11 As shown, the first width w1 is not greater than 2 mm. It should be noted that if the first width w1 is greater than 2 mm, the amount of the encapsulation glue 50 used increases in order to allow the encapsulation glue 50 to fill the glue outlet channel 100. In the process of preparing the semiconductor device 1, when the cover plate 40 is pressed against the tube shell 10, the amount of the encapsulation glue 50 sandwiched between the second annular end face 16 and the first annular end face 14 increases, resulting in an increase in the difficulty of the encapsulation process. Preferably, the first width w1 can be 0.3 mm to 2 mm.
[0041] Optionally, in order to arrange more conductive pins 20 on the first annular end surface 14 or to achieve miniaturization of the semiconductor device 1 , the first width w1 may be 0.3 mm to 0.5 mm.
[0042] Alternatively, if Figure 1-Figure 10 As shown, the conductive pin 20 includes a connecting portion 21 and an extending portion 22; the connecting portion 21 is disposed on the first annular end surface 14, and the extending portion 22 extends from the connecting portion 21 to a side of the outer ring edge 14-2 away from the inner ring edge 14-1.
[0043] The first area P1 and the second area P2 are located at the connecting portion 21. Both ends of the connecting portion 21 along the direction around the receiving groove 11 are respectively formed as protruding ends 23 protruding relative to the extending portion 22 along the direction around the receiving groove 11. The two opposite edges of the two opposite protruding ends 23 of two adjacent conductive pins 20 constitute the glue outlet channel 100.
[0044] In the above manner, the two edges of the two protruding ends 23 of two adjacent conductive pins 20 are used to form the glue outlet channel 100, which can greatly reduce the length of the glue outlet channel 100, thereby facilitating the improvement of the fluidity of the packaging glue 50 in the glue outlet channel 100 during the preparation of the semiconductor device 1. The protruding ends 23 increase the overall length of the connecting portion 21 in the direction around the receiving groove 11, so that the first area P1 of the connecting portion 21 has a sufficient length to be used as the connection position of the bonding wire 60, thereby increasing the area of the conductive pin 20 that can be used for connecting with the bonding wire 60.
[0045] Alternatively, if Figure 1-Figure 10 As shown, the tube shell 10 includes a heat sink plate 12 and a ceramic insulating ring 13, and the ceramic insulating ring 13 is disposed on the heat sink plate 12 to enclose the receiving groove 11. The first annular end surface 14 is the end surface of the ceramic insulating ring 13 extending around the opening of the receiving groove 11.
[0046] The tube shell 10 assembly includes a welding pad 70, and a welding pad 70 is disposed between each conductive pin 20 and the first annular end surface 14. In this way, at least the following two technical effects are achieved.
[0047] Firstly, the conductive pin 20 is welded to the ceramic insulating ring 13 through the welding pad 70 to enhance the connection strength between the conductive pin 20 and the ceramic insulating ring 13. Secondly, the heat sink 12 can conduct the heat in the die 30 in time and expand the heat outside the semiconductor device 1.
[0048] Optionally, the welding pad layer 70 includes but is not limited to a molybdenum layer. Figure 1-Figure 11 As shown, the welding pads 70 under the two adjacent conductive pins 20 are spaced apart to form a first gap 71, and the side of the first gap 71 facing away from the first annular end surface 14 is connected to the glue outlet channel 100. The width of the first gap 71 is the third width w3, and the third width w3 is not greater than the first width w1. Preferably, the third width w3 is less than the first width w1, and the first width w1 is less than the second width w2.
[0049] Alternatively, if Figure 1-Figure 11 As shown, the third width may be 0.1-2 mm. Further, The third width w3 may be 0.3-0.5 mm. In this way, adjacent welding pads 70 can be insulated and separated, and the packaging glue 50 is also helpful to fill the first gap 71. By way of example and not limitation, the third width w3 includes but is not limited to 0.3 mm, 0.4 mm or 0.5 mm.
[0050] Embodiment 2 See also Figure 1-Figure 11 As shown, the first embodiment is further limited to obtain the second embodiment. The same points between the second embodiment and the first embodiment are not repeated here. The second embodiment is further limited as compared with the first embodiment as follows.
[0051] Alternatively, if Figure 1-Figure 11 As shown, the glue outlet channel 100 is formed with a connecting portion 120, and one end of the expansion section 150 away from the corresponding widened end 140 is connected to the connecting portion 120. The width of the connecting portion 120 is the fourth width w4, and the width of the widened end 140 is the second width w2, and the fourth width w4 is smaller than the second width w2.
[0052] In the above manner, during the process of manufacturing the semiconductor device 1, as the cover plate 40 is pressed against the tube shell 10, the fluid packaging glue 50 is squeezed, so that the packaging glue 50 continues to flow into the glue outlet channel 100, and as the packaging glue 50 continues to flow into the glue outlet channel 100, under the guidance of the expansion edge 41, the packaging glue 50 in the glue outlet channel 100 flows from the connecting portion 120 to the widened end 140, so that the packaging glue 50 is more fully filled in the connecting portion 120, the expansion section 150 and the widened end 140.
[0053] Alternatively, if Figure 1-Figure 11 As shown, the fourth width w4 is equal to the first width w1. In this way, during the process of manufacturing the semiconductor device 1, as the cover plate 40 is pressed against the tube shell 10, the packaging glue 50 can smoothly transition from the connecting portion 120 to the expansion section 150.
[0054] Alternatively, if Figure 1-Figure 11 As shown, the first glue outlet end 110 faces the inner ring edge, and the second glue outlet end 130 faces the outer ring edge. The first glue outlet end 110 and the second glue outlet end 130 are both formed as widened ends 140. The expansion section 150 corresponding to the widened end 140 of the first glue outlet end 110 is the first expansion section 150a. The expansion section 150 corresponding to the widened end 140 of the second glue outlet end 130 is the second expansion section 150b. The first expansion section 150a and the second expansion section 150b are arranged at intervals, and the connecting portion 120 is located between the first expansion section 150a and the second expansion section 150b, and the connecting portion 120 is formed as a connecting section 120b, and the connecting section 120b connects the first expansion section 150a and the second expansion section 150 respectively.
[0055] In the above manner, the first glue outlet end 110 and the second glue outlet end 130 are respectively formed as widened ends 140. In the process of processing and preparing the semiconductor device 1, as the encapsulation glue 50 continues to flow into the glue outlet channel 100, the encapsulation glue 50 in the glue outlet channel 100 can simultaneously achieve the first flow and the second flow. The first flow includes flowing from the connecting section 120b to the first glue outlet end 110 under the guidance of the expansion edge 41 of the first expansion section 150a. The second flow includes flowing from the connecting section 120b to the second glue outlet end 130 under the guidance of the expansion edge 41 of the second expansion section 150b. Thereby, the encapsulation glue 50 is more fully filled in the connecting section 120b, the first expansion section 150a, the widened end 140 of the first glue outlet end 110, the second expansion section 150b, and the widened end 140 of the second glue outlet end 130.
[0056] It should be noted that the width of the connecting portion 120 is the width of the connecting section 120 b , that is, the width of the connecting section 120 b is the fourth width w4 .
[0057] Alternatively, if Figure 1-Figure 11 As shown, the first edge 200 and the second edge 300 are both formed with a connecting edge 42. The edges of the connecting section 120b on both sides separated along the width direction of the glue outlet channel 100 are composed of the connecting edges 42 of the first edge 200 and the second edge 300. The connecting edge 42 of the first edge 200 can be arranged in parallel with the connecting edge 42 of the second edge 300.
[0058] In the above manner, since the connecting edge 42 of the first edge 200 and the connecting edge 42 of the second edge 300 are arranged in parallel, the width of each part of the connecting section 120b is equal along the length direction of the glue outlet channel 100, so that the packaging glue 50 flowing into the connecting section 120b can be more evenly diverted to achieve the first flow and the second flow. The first flow includes flowing from the connecting section 120b to the first glue outlet end 110 under the guidance of the expansion edge 41 of the first expansion section 150a. The second flow includes flowing from the connecting section 120b to the second glue outlet end 130 under the guidance of the expansion edge 41 of the second expansion section 150b.
[0059] Alternatively, if Figure 1-Figure 11 As shown, in order to facilitate the flow of the packaging glue 50 in the glue outlet channel 100 , the expansion edge 41 of any one of the first edge 200 and the second edge 300 smoothly transitions to the connection edge 42 .
[0060] Embodiment 3 contrast Figure 1-Figure 11 , see Fig.12 , Embodiment 3 is obtained by modifying Embodiment 2. The similarities between Embodiment 3 and Embodiment 2 are not repeated here. Embodiment 3 is different from Embodiment 2 as follows.
[0061] Optionally, compare Figure 1-Figure 11 , see Fig.12 As shown, the first expansion section 150a is directly connected to the second expansion section 150b, the connecting portion 120 is located between the first expansion section 150a and the second expansion section 150b, and the connecting portion 120 is formed as a connecting port 120a at the connecting point of the first expansion section 150a and the second expansion section 150b. The connecting port 120a connects the first expansion section 150a and the second expansion section 150b respectively.
[0062] It should be noted that the width of the communication portion 120 is the width of the communication opening 120 a , that is, the width of the communication opening 120 a is the fourth width w4 .
[0063] Embodiment 4 contrast Figure 1-Figure 11 , see Fig.13 , Embodiment 4 is obtained by modifying Embodiment 1. The similarities between Embodiment 4 and Embodiment 1 are not repeated here. Embodiment 4 is different from Embodiment 1 as follows.
[0064] The first glue outlet end 110 faces the inner ring edge 14 - 1 , and the second glue outlet end 130 faces the outer ring edge 14 - 2 . The first glue outlet end 110 does not form a widened end 140 , and the second glue outlet end 130 does not form a widened end 140 .
[0065] In the above manner, during the process of preparing the semiconductor device 1, when the cover plate 40 is pressed against the tube shell 10, under the guidance of the expansion section 150 corresponding to the widened end 140 of the second glue outlet end 130, the proportion of the packaging glue 50 with fluidity in the glue outlet channel 100 that can be diverted to achieve the third flow is reduced, so that the proportion of the packaging glue 50 with fluidity in the glue outlet channel 100 that can be diverted to achieve the fourth flow is increased. The third flow includes flowing toward the first glue outlet end 110. The fourth flow includes flowing toward the second glue outlet end 130. In this way, during the process of preparing the semiconductor device 1, when the cover plate 40 is pressed against the tube shell 10, the proportion of the packaging glue 50 in the glue outlet channel 100 flowing into the accommodating groove 11 is reduced, and the proportion flowing out from the second glue outlet end 130 is increased, so as to enhance the filling and sealing effect of the packaging glue 50 on the expansion section 150 corresponding to the widened end 140 of the second glue outlet end 130 and the widened end 140 of the second glue outlet end 130.
[0066] Optionally, compare Figure 1-Figure 11 , see Fig.13, the expansion section 150 corresponding to the widened end 140 of the second glue outlet end 130 is the second expansion section 150b. Along the direction toward the widened end 140 of the second glue outlet end 130, the second expansion section 150b extends from the first glue outlet end 110 to the second glue outlet end 130. In this way, the filling and sealing effect of the encapsulation glue 50 on the second expansion section 150b and the widened end 140 of the second glue outlet end 130 can be greatly enhanced.
[0067] Control experiment Take a first semiconductor device 1a and a second semiconductor device 1b, wherein the first semiconductor device 1a is a semiconductor device in the prior art, and the second semiconductor device 1b is the semiconductor device 1 described above in this embodiment. For example, the second semiconductor device 1b is the semiconductor device 1 described in the second embodiment described above in this embodiment. The similarities between the first semiconductor device 1a and the second semiconductor device 1b are not repeated here. The difference between the first semiconductor device 1a and the second semiconductor device 1b is that, compared Figure 5-Figure 9 , see Fig.14 As shown, the glue outlet channel 100 of the first semiconductor device 1a does not form a widened end 140. Fig.15 and Fig.16 .
[0068] like Fig.15 As shown, the packaging glue 50 and the ceramic insulating ring 13 in the glue outlet channel 100 of the first semiconductor device 1a have obvious stratification. Fig.15 As shown in the dotted circle in the middle. The glue outlet channel 100 of the first semiconductor device 1a has obvious unfilled parts on both sides along the width direction of the glue outlet channel 100. Fig.15 As shown in the dotted circle. Fig.16 As shown, there is no obvious delamination between the packaging glue 50 and the ceramic insulating ring 13 in the glue outlet channel 100 of the second semiconductor device 1 b , and there is no obvious unfilled portion on both sides of the glue outlet channel 100 along the width direction of the glue outlet channel 100 .
[0069] Obviously, the widened end 140 of the semiconductor device 1 of this embodiment can improve the fluidity of the packaging glue 50, thereby improving the overflow effect of the packaging glue 50 through the glue outlet channel 100, so that the packaging glue 50 can more fully fill the glue outlet channel 100 during the overflow process, thereby improving the airtightness of the semiconductor device 1.
[0070] The above are only implementation methods of this embodiment, and are not intended to limit the patent scope of this embodiment. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this embodiment, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of this embodiment.
Claims
1. A semiconductor device, characterized in that: The semiconductor device comprises: The tube shell is provided with a receiving groove, wherein the receiving groove is provided with a tube core; the end surface of the side wall of the receiving groove extending around the opening of the receiving groove is formed into a first annular end surface; A plurality of conductive pins are arranged on the first annular end surface and are spaced apart around the opening of the accommodating groove; two adjacent edges of two adjacent conductive pins are spaced apart to form a glue outlet channel; and a cover plate and packaging glue, wherein the cover plate is arranged on the containing groove, and the packaging glue is arranged between the conductive pin and the cover plate and in the glue outlet channel; Among them, the two ends of the glue outlet channel along the length direction of the glue outlet channel are respectively a first glue outlet end and a second glue outlet end; the first glue outlet end and / or the second glue outlet end are formed as widened ends; the glue outlet channel is formed with an expansion section corresponding to the widened end, and the expansion section is connected to the corresponding widened end; and along the direction toward the corresponding widened end, the width of the expansion section gradually expands.
2. The semiconductor device according to claim 1, wherein: The length of the glue outlet channel is a first length, the ratio of the length of the expansion section to the first length is a first ratio, and the first ratio is not less than 0.
2.
3. The semiconductor device according to claim 2, characterized in that The first length is 1.00-2 mm.
4. The semiconductor device according to claim 1, wherein: The width of an end of the expansion section away from the corresponding widened end is a first width, and the first width is not less than 0.1 mm.
5. The semiconductor device according to claim 4, characterized in that The first width is no greater than 2 mm.
6. The semiconductor device according to claim 5, characterized in that The width of the widened end is the second width, and the second width is 0.5-5 mm.
7. The semiconductor device according to claim 1, wherein: The first annular end surface has an inner ring edge close to the containing groove and an outer ring edge away from the containing groove; the first glue outlet end faces the inner ring edge, and the second glue outlet end faces the outer ring edge; Wherein, the first glue outlet end does not form the widened end, and the second glue outlet end forms the widened end.
8. The semiconductor device according to claim 7, characterized in that The expansion section corresponding to the widened end of the second glue outlet end is a second expansion section; along the direction toward the widened end of the second glue outlet end, the second expansion section extends from the first glue outlet end to the second glue outlet end.
9. The semiconductor device according to claim 1, wherein: The first annular end surface has an inner ring edge close to the containing groove and an outer ring edge away from the containing groove; the first glue outlet end faces the inner ring edge, and the second glue outlet end faces the outer ring edge; Wherein, the first glue outlet end and the second glue outlet end are both formed as the widened end; the expansion section corresponding to the widened end of the first glue outlet end is the first expansion section; the expansion section corresponding to the widened end of the second glue outlet end is the second expansion section; the first expansion section is directly connected with the second expansion section, so that a connecting port is formed in the glue outlet channel at the connecting point of the first expansion section and the second expansion section, and the connecting port connects the first expansion section and the second expansion section respectively.
10. The semiconductor device according to claim 1, wherein: The glue outlet channel is formed with a connecting section, and one end of the expansion section away from the corresponding widened end is connected to the connecting section; the width of the connecting section is the fourth width, the width of the widened end is the second width, and the fourth width is smaller than the second width.
11. The semiconductor device according to claim 10, characterized in that The first annular end surface has an inner ring edge close to the containing groove and an outer ring edge away from the containing groove; the first glue outlet end faces the inner ring edge, and the second glue outlet end faces the outer ring edge; Wherein, the first glue outlet end and the second glue outlet end are both formed as the widened end; the expansion section corresponding to the widened end of the first glue outlet end is the first expansion section; the expansion section corresponding to the widened end of the second glue outlet end is the second expansion section; the first expansion section and the second expansion section are arranged at intervals, and the connecting section is located between the first expansion section and the second expansion section, and respectively connects the first expansion section and the second expansion section.
12. The semiconductor device according to claim 1, wherein: Two adjacent edges of two adjacent conductive pins are respectively a first edge and a second edge; Both the first edge and the second edge are formed with expansion edges, wherein the edges on both sides of the expansion section separated along the width direction of the glue outlet channel are composed of the expansion edges of the first edge and the second edge; the expansion edge includes any one or a combination of two of a bevel edge and a curved edge, so that the wide end of the expansion section gradually expands in the direction toward the corresponding widened end.
13. The semiconductor device according to claim 12, characterized in that The glue outlet channel is formed with a connecting section, and one end of the expansion section away from the corresponding widened end is connected to the connecting section; the width of the connecting section is the fourth width, the width of the widened end is the second width, and the fourth width is smaller than the second width; the first edge and the second edge are both formed with a connecting edge; Wherein, the edges of the connecting section on both sides separated by the width direction of the glue outlet channel are composed of the connecting edges of the first edge and the second edge; the connecting edge of the first edge and the connecting edge of the second edge are arranged in parallel.
14. The semiconductor device according to claim 13, characterized in that In any one of the first edge and the second edge, the expansion edge smoothly transitions to the connection edge.
15. The semiconductor device according to claim 12, characterized in that From an end of the expansion section away from the corresponding widened end to an end of the expansion section close to the corresponding widened end, the expansion edge sequentially connects a first end point and a second end point; Wherein, the distance between the first end point and the second end point along the width direction of the glue outlet channel is a first distance, and the first distance is not greater than 1 mm.
16. The semiconductor device according to claim 12, wherein: From an end of the expansion section away from the corresponding widened end to an end of the expansion section close to the corresponding widened end, the expansion edge sequentially connects a first end point and a second end point; Among them, the distance between the first endpoint and the second endpoint along the width direction of the glue outlet channel is a first distance, and the length of the expansion section is the distance between the first endpoint and the second endpoint along the length direction of the glue outlet channel; the ratio of the first distance to the length of the expansion section is a second ratio, and the second ratio is 1:3~2:
1.
17. The semiconductor device according to claim 1, wherein: The semiconductor device includes a bonding wire; a groove is provided on one side of the cover plate facing the accommodating groove, and an end surface of a side wall of the groove extending around an opening of the groove is formed into a second annular end surface; Among them, the first annular end face has an inner ring edge close to the accommodating groove and an outer ring edge away from the accommodating groove; the part of the conductive pin covering the first annular end face has a first area close to the inner ring edge and a second area away from the inner ring edge; the groove is connected to the accommodating groove to form a cavity; the second annular end face is arranged corresponding to the first annular end face and covers the second area of the conductive pin, and the first area of the conductive pin is located in the cavity; the tube core is bonded to the first area of the conductive pin through the bonding wire.
18. The semiconductor device according to claim 17, characterized in that The conductive pin comprises a connecting portion and an extending portion; the connecting portion is arranged on the first annular end surface, and the extending portion extends from the connecting portion to a side of the outer ring edge away from the inner ring edge; Wherein, the first area and the second area are located in the connecting part; the two ends of the connecting part along the direction surrounding the accommodating groove are respectively formed as protruding ends protruding relative to the extending part along the direction surrounding the accommodating groove; the two opposite edges of the two protruding ends of two adjacent conductive pins constitute the glue outlet channel.
19. The semiconductor device according to claim 1, wherein: The tube shell includes a heat sink plate and a ceramic insulating ring, wherein the ceramic insulating ring is arranged on the heat sink plate to enclose the accommodating groove; the first annular end surface is the end surface of the ceramic insulating ring extending around the opening of the accommodating groove; Among them, the tube shell assembly includes a welding pad layer, and the welding pad layer is arranged between each of the conductive pins and the first annular end face; the welding pad layers under the two adjacent conductive pins are spaced to form a first gap; the first gap is connected to the glue outlet channel on the side facing away from the first annular end face; the width of the end of the expansion section away from the corresponding widened end is the first width, and the width of the first gap is the third width; the third width is not greater than the first width, and the third width is 0.1~2mm.
Citation Information
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