Light conversion module, manufacturing method thereof and display

Abstract

The invention discloses a light conversion module, a manufacturing method thereof and a display. The display comprises a light conversion module and a light emitting module. The light conversion module comprises a color pixel layer, an inorganic retaining wall structure and a plurality of optical filters. The inorganic retaining wall structure is arranged on the color pixel layer and comprises a plurality of through holes. And the optical filters are respectively arranged at the bottoms of the plurality of through holes. The upper surface of the inorganic retaining wall structure is higher than the upper surface of each optical filter. Therefore, the height of the inorganic retaining wall structure of the light conversion module provided by the invention has a preferable shielding effect, so that the contrast ratio of a display is improved.

Description

Technical Field

[0001] The present application relates to the field of light conversion, and in particular to a light conversion module with a retaining wall, a method for manufacturing the light conversion module, and a display with the light conversion module. Background Art

[0002] In recent years, the light-emitting modules of displays have gradually adopted micro light-emitting diodes. In order to overcome the color mixing problem of the three primary colors of RGB, barriers are used between pixels to prevent light crosstalk between sub-pixels of different colors.

[0003] However, the existing barrier wall is made of black photoresist and formed by a photolithography process. Since black photoresist is not easy to expose, the height of the barrier wall is limited and cannot effectively block the light crosstalk (i.e., crosstalk phenomenon) from adjacent sub-pixels of different colors. How to improve the process to increase the height of the barrier wall and overcome the above defects has become one of the important issues that the industry wants to solve. Summary of the invention

[0004] The technical problem to be solved by the present application is to provide a light conversion module and a manufacturing method thereof, and a display in view of the deficiencies of the prior art, wherein the height of the inorganic retaining wall structure of the light conversion module has an optimal shielding effect to improve the contrast of the display.

[0005] In order to solve the above-mentioned technical problems, one of the technical solutions adopted in the present application is to provide a light conversion module, which is suitable for a light-emitting module with multiple light-emitting components, including: a color pixel layer, having multiple first color sub-pixel areas, multiple second color sub-pixel areas and multiple third color sub-pixel areas, and the color pixel layer includes multiple first color conversion parts respectively located in the multiple first color sub-pixel areas, multiple second color conversion parts respectively located in the multiple second color sub-pixel areas and multiple light-transmitting parts respectively located in the multiple third color sub-pixel areas; an inorganic retaining wall structure, arranged on the color pixel layer and including multiple through holes, the multiple through holes respectively correspond to the multiple first color sub-pixel areas, the multiple second color sub-pixel areas and the multiple third color sub-pixel areas; and multiple filters, respectively arranged in the multiple through holes, and each of the filters is located at the bottom of the corresponding through hole; wherein the upper surface of the inorganic retaining wall structure is higher than the upper surface of each of the filters.

[0006] Furthermore, a width of each of the color filters in the first direction is greater than a width of a corresponding first color conversion portion, second color conversion portion or light-transmitting portion in the first direction.

[0007] Furthermore, the upper surface of each of the filters is no higher than half of the height of the plurality of through holes.

[0008] Furthermore, each of the plurality of through holes includes: a first portion having a first width in a first direction; and a second portion disposed below the first portion and adjacent to the color pixel layer, for accommodating a corresponding plurality of the filters, the second portion having a second width in the first direction that is greater than the first width.

[0009] Furthermore, a first light absorbing layer is disposed around the plurality of first color conversion portions, the plurality of first color conversion portions, and the plurality of light-transmitting portions to define a corresponding plurality of openings.

[0010] Furthermore, the second width of the second portion in the first direction is greater than or equal to the corresponding width of the opening in the first direction.

[0011] Furthermore, an adhesive layer is disposed below the color pixel layer.

[0012] Furthermore, the plurality of first color conversion portions include a red conversion substance, and the plurality of second color conversion portions include a green conversion substance.

[0013] Furthermore, the red conversion material includes red quantum dots, and the green conversion material includes green quantum dots.

[0014] Furthermore, the multiple filters corresponding to the multiple first color sub-pixel areas are red filters, the multiple filters corresponding to the multiple second color sub-pixel areas are green filters, and the multiple filters corresponding to the multiple third color sub-pixel areas are blue filters.

[0015] Furthermore, the upper surface of the inorganic retaining wall structure has grinding marks.

[0016] Furthermore, the inorganic retaining wall structure is made of silicon or silicon carbide.

[0017] Furthermore, each of the plurality of light-transmitting portions includes light-scattering particles.

[0018] In order to solve the above-mentioned technical problems, another technical solution adopted in the present application is a display, comprising: the aforementioned light conversion module; a light-emitting module, arranged on a light incident side of the light conversion module, wherein the light-emitting module comprises: a circuit substrate and a plurality of light-emitting components, arranged on the circuit substrate.

[0019] Furthermore, the light-emitting module also includes a second light-absorbing layer, which is arranged around the plurality of light-emitting components to define a corresponding plurality of light-emitting areas, and the width of each of the plurality of first color conversion parts, the second color conversion parts and the plurality of light-transmitting parts in the first direction is greater than or equal to the width of each of the light-emitting areas in the first direction.

[0020] Furthermore, the plurality of light emitting components are a plurality of blue light emitting diode chips or white light emitting diode chips.

[0021] To further understand the features and technical contents of the present application, please refer to the following detailed description and drawings of the present application. However, the drawings provided are only for reference and illustration and are not intended to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a schematic diagram of a display according to an embodiment of the present application.

[0023] Figure 2 is a schematic diagram of a display according to an embodiment of the present application.

[0024] Figure 3 for Figure 2 Schematic diagram of the cross section taken along the section line II-II.

[0025] Figure 4 This is a process flow chart of the light conversion module of this application.

[0026] Figure 5 It is a cross-sectional schematic diagram of forming a through hole in an embodiment of the present application.

[0027] Figure 6 It is a cross-sectional schematic diagram of forming a filter in an embodiment of the present application.

[0028] Figure 7 It is a cross-sectional schematic diagram of forming a first light absorbing layer in an embodiment of the present application.

[0029] Figure 8 Schematic diagram of a cross-section of a color pixel layer formed in an embodiment of the present application.

[0030] Fig. 9 A schematic cross-sectional view of a thinned substrate in an embodiment of the present application.

[0031] Fig.10 A cross-sectional schematic diagram of the process of opening a hole in a thinned substrate in an embodiment of the present application. DETAILED DESCRIPTION

[0032] The following is an explanation of the implementation methods of the "light conversion module, its manufacturing method, and display" disclosed in this application through specific examples. Those skilled in the art can understand the advantages and effects of this application from the contents disclosed in this specification. This application can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this application. In addition, the drawings of this application are only simple schematic illustrations and are not depicted according to actual dimensions. It is stated in advance. The following implementation methods will further explain the relevant technical contents of this application in detail, but the disclosed contents are not intended to limit the scope of protection of this application.

[0033] It should be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" used herein may include any one or more combinations of the associated listed items depending on the actual situation.

[0034] Figure 1 is a schematic diagram of a display according to an embodiment of the present application. Figure 2 is a schematic diagram of a display according to an embodiment of the present application. Figure 3 for Figure 1 Schematic diagram of the cross section taken along the section line II-II. Figures 1 to 3 As shown, the display 1 of the present application includes a light conversion module 10 and a light emitting module 20. The light emitting module 20 is arranged on the light incident side of the light conversion module 10. The light conversion module 10 has a plurality of pixel areas PX and an inorganic retaining wall structure 120. Each pixel area PX includes a first color sub-pixel area RSPX, a second color sub-pixel area GSPX, and a third color sub-pixel area BSPX. In the present embodiment, the first color sub-pixel area RSPX is a red sub-pixel area, the second color sub-pixel area GSPX is a green sub-pixel area, and the third color sub-pixel area BSPX is a blue sub-pixel area. The display 1 has a plurality of pixel areas arranged in an array, and each pixel area PX includes sub-pixel areas of different colors. The pixel area PX of the present embodiment has sub-pixel areas of red, blue, and green, but the pixel area of ​​the present application can also be composed of four colors of red, blue, green, and white, that is, it has four sub-pixel areas, and the present application does not particularly limit the colors in the pixel area.

[0035] Figure 1 is a schematic diagram of a display according to an embodiment of the present application. Figure 2 is a schematic diagram of a display according to an embodiment of the present application. Figure 3 for Figure 1 Schematic diagram of the cross section taken along the section line II-II. Figures 1 to 3 As shown, the display 1 of the present application includes a light conversion module 10 and a light emitting module 20. The light emitting module 20 is arranged on the light incident side of the light conversion module 10. The light conversion module 10 has a plurality of pixel areas PX and an inorganic retaining wall structure 120. Each pixel area PX includes a first color sub-pixel area RSPX, a second color sub-pixel area GSPX, and a third color sub-pixel area BSPX. In the present embodiment, the first color sub-pixel area RSPX is a red sub-pixel area, the second color sub-pixel area GSPX is a green sub-pixel area, and the third color sub-pixel area BSPX is a blue sub-pixel area. The display 1 has a plurality of pixel areas arranged in an array, and each pixel area PX includes sub-pixel areas of different colors. The pixel area PX of the present embodiment has sub-pixel areas of red, blue, and green, but the pixel area of ​​the present application can also be composed of four colors of red, blue, green, and white, that is, it has four sub-pixel areas, and the present application does not particularly limit the colors in the pixel area.

[0036] The inorganic retaining wall structure 120 surrounds each sub-pixel region and defines a plurality of through holes 121. In the embodiment of the present application, the through holes 121 have a plurality of different widths. Figure 2 and Figure 3 As shown, on the light-emitting side of the display 1, that is, the top surface of the inorganic retaining wall structure 120, each through hole 121 has a first width W1 in the first direction D1. On the light-entering side of the inorganic retaining wall structure 120, each through hole 121 has a second width W2 in the first direction D1, and the first width W1 is smaller than the second width W2. In detail, in the plane formed by the first direction D1 and the second direction D2, the shape of the through holes in the inorganic retaining wall structure 120 is a rounded rectangle, but the top surface cross-sectional area of ​​each through hole 121 on the light-emitting side of the inorganic retaining wall structure 120 is smaller than the cross-sectional area of ​​the light-entering side of the inorganic retaining wall structure 120. The through hole 121 in this embodiment may include two parts with different widths, however, in the embodiment of the present application, each through hole 121 of the inorganic retaining wall structure 120 may be designed with more than two different widths as required.

[0037] The inorganic retaining wall structure 120 of this embodiment is formed by wafer thinning and drilling. The wafer material is silicon or silicon carbide, and the new Mohs hardness of silicon carbide is 13. After the thinning process, the upper surface of the inorganic retaining wall structure 120 will have the grinding traces of the wafer. The height of the inorganic retaining wall structure 120 made by grinding the silicon wafer has a preferred shielding effect to improve the contrast of the display.

[0038] like Figure 3As shown, the light conversion module 10 includes a color pixel layer 110, an inorganic retaining wall structure 120 and a filter 130. The stacking relationship of each component in the light conversion module 10 is as follows: the inorganic retaining wall structure 120 is disposed on the color pixel layer 110 and includes a plurality of through holes 121, and the filter 130 is disposed at the bottom of the plurality of through holes 121. In the embodiment of the present application, since the material of the inorganic retaining wall structure 120 is a silicon wafer, the upper surface S1 of the inorganic retaining wall structure 120 is higher than the upper surface S2 of each filter 130, which can effectively block the light crosstalk (i.e., crosstalk phenomenon) from adjacent sub-pixels of different colors.

[0039] In addition, the light emitting module 20 includes a circuit substrate 210 and a plurality of light emitting components 220. An adhesive layer 150 is disposed at the bottom of the light conversion module 10, and the adhesive layer 150 allows the light conversion module 10 to be bonded to the light emitting module 20 to form the display 1. The light emitting component 220 in this embodiment is a micron-sized light emitting diode (micro LED), and the present application does not particularly limit the type of the light emitting component 220.

[0040] like Figure 2 , 3 As shown, the sub-pixel regions adjacent to the pixel region PX along the first direction D1 of this embodiment all present different colors. Therefore, when the light emitted by the light-emitting component 220 corresponding to each sub-pixel region passes through the color pixel layer 110 and the filter 130 in each sub-pixel region in sequence, the inorganic retaining wall structure 120 disposed around the sub-pixel region can effectively block the light crosstalk from adjacent sub-pixels of different colors.

[0041] Specifically, if Figure 3 As shown, a plurality of color pixel layers 110 are distributed in a plurality of pixel regions. The color pixel layer 110 includes a first color conversion portion 111, a second color conversion portion 112, and a light-transmitting portion 113. The present application does not particularly limit the color of the light emitted by the light-emitting component 220, which may be, for example, a blue light-emitting diode. For example, in the present embodiment, the first color sub-pixel region RSPX is a red sub-pixel region, the second color sub-pixel region GSPX is a green sub-pixel region, and the third color sub-pixel region BSPX is a blue sub-pixel region. The first color conversion portion 111 includes a red conversion substance, such as a red quantum dot. The second color conversion portion 112 includes a green conversion substance, such as a green quantum dot. The red or green quantum dots can change the blue wavelength emitted by the light-emitting module. In detail, the red quantum dots are excited by the incident blue wavelength and converted into a red wavelength, and the green quantum dots are excited by the incident blue wavelength and converted into a green wavelength. The quantum dot material can effectively improve the luminous efficiency of red and green.

[0042] In addition, when the light-emitting component 220 is a blue light-emitting diode, the three-color sub-pixel area (i.e., the blue sub-pixel area BSPX) does not need to convert the light color, so the corresponding color pixel layer 110 uses the light-transmitting portion 113. In this embodiment, a white photoresist with light-scattering particles is selected to form the light-transmitting portion 113. When the blue light emitted by the light-emitting component 220 passes through the light-transmitting portion 113, the light-scattering particles in the light-transmitting portion 113 will scatter the blue light so that the uniformity of the emitted blue light is the same as the uniformity of the red light and the green light. However, the light-transmitting portion 113 can also be vacant or composed of a transparent material, and the present application does not particularly limit the type of the light-transmitting portion 113.

[0043] like Figure 3 As shown, there is a filter 130 between the inorganic retaining wall structure 120 and the color pixel layer 110. In this embodiment, the first color sub-pixel region RSPX is a red filter 131, the second color sub-pixel region GSPX is a green filter 132, and the third color sub-pixel region BSPX is a blue filter 133. The filter 130 is disposed in the second portion 1212 of the inorganic retaining wall structure 120. This filters the light band other than the desired color to improve the color purity of the emitted light.

[0044] In each sub-pixel region, the first light absorption layer 140 surrounds the color pixel layer 110 to prevent light from penetrating the color pixel layer 110 and causing crosstalk. Specifically, the inorganic barrier wall structure 120 covers the first light absorption layer 140 and partially covers the filter 130. The first light absorption layer 140 surrounds the color pixel layer 110 and defines an aperture AP. Each through hole 121 in the inorganic barrier wall structure 120 includes a first portion 1211 having a first width W1 and a second portion 1212 having a second width W2. The second portion 1212 is disposed below the first portion 1211 and adjacent to the color pixel layer 110. That is, the first portion 1211 of the through hole 121 is connected to the second portion 1212 along the third direction D3 and penetrates the inorganic barrier wall structure 120. In this embodiment, the through hole 121 has different widths in the first direction D1. In each through hole 121, the second width W2 of the second portion 1212 is greater than the first width W1 of the first portion 1211. In a conventional light conversion module, the filter layer and the quantum dot layer have similar sizes and are aligned. When the manufacturing machine and the light conversion module 10 are aligned, an offset occurs, causing the filter layer to only partially overlap the quantum dot layer, thereby causing uneven light output from the display 1. In this embodiment, because the width of the color pixel layer 110 located under the through hole 121 in the first direction D1 is smaller than the width of the filter 130, the allowable deviation value of the alignment of the two is increased. In other words, when the color pixel layer 110 is formed on the filter 130 and is offset, this offset is within the allowable deviation value, which can still ensure uniform light output from the display 1.

[0045] like Figures 1 to 3 As shown, a second light absorbing layer 230 is disposed on the circuit substrate 210 of the light emitting module 20 of this embodiment. The second light absorbing layer 230 surrounds the light emitting component 220 and defines a light emitting area EL. Figure 1 As shown, on the plane formed by the first direction D1 and the second direction D2, since the cross-sectional area CA1 of the color filter 130 is larger than the cross-sectional area CA2 of the color pixel layer 110, Figure 1 The cross-sectional area of ​​the middle filter 130 is represented by the area surrounded by the dotted line. Figure 1 The cross-sectional area of ​​the light-emitting region EL is not indicated. Figure 2 The width of the middle filter 130 is greater than the width of the light emitting area EL, and the cross-sectional area CA1 of the filter 130 is greater than the cross-sectional area CA3 of the light emitting area EL. Therefore, when the light conversion module 10 and the light emitting module 20 are assembled, the allowable deviation of the alignment between the two becomes larger. In other words, when the light conversion module 10 and the light emitting module 20 are offset when assembled, the offset is within the allowable deviation value, and it can still be ensured that the light emitted by the light emitting module 20 will be converted or absorbed by the color pixel layer 110.

[0046] In this embodiment, the filter 130 has a height H1, and the through hole 121 has a height H2, and the height H1 is substantially less than or equal to a predetermined ratio of the height H2. That is, when the lower surface of the filter 130 is flush with the bottom of the through hole 121, the upper surface of the filter 130 is not higher than a predetermined ratio of the height H2 of the through hole 121, so that the light emitted by the light-emitting module 20 and passing through the upper surface of the filter 130 can be blocked by the inorganic retaining wall structure 120, thereby further reducing the crosstalk between adjacent pixels. In a preferred embodiment, the height H1 is less than or equal to one-half of the height H2.

[0047] In this embodiment, the first light absorbing layer 140 and the second light absorbing layer 230 are both black matrices, and the black matrix includes organic materials, inorganic materials or metals. The light absorbing material can prevent crosstalk between adjacent pixels.

[0048] Next, a method for manufacturing the light conversion module 10 of this embodiment will be described. Figure 4 This is a process flow chart of the light conversion module 10 of the present application. Figures 5 to 10 Schematic diagram of the cross-section of each process step of the embodiment of the present application. Figure 4 as well as Figures 5 to 10 The present invention provides a method for manufacturing a light conversion module 10, which includes at least the following steps:

[0049] Step S1: forming a plurality of grooves G on a substrate S.

[0050] Figure 5 Schematic diagram of forming multiple through holes in the embodiment of the present application. Figure 4 As shown, a groove G is formed in each sub-pixel region on one side of the substrate S. The formed groove G is the second portion 1212 of the through hole 121 of the inorganic retaining wall structure 120 in the light conversion module 10. In this embodiment, the substrate S can be formed of an opaque material, such as silicon or silicided carbon, and the groove G is formed by a photolithography process. In this embodiment, the thickness of the substrate S is about 700 μm, and the average height of the groove G is about 10 μm.

[0051] Step S2: forming a plurality of filters 130 in the plurality of grooves G respectively.

[0052] Figure 6 FIG. 1 is a cross-sectional schematic diagram of a filter formed in an embodiment of the present application. Figure 6As shown, filters 130 of different colors are sequentially formed in the groove G by photolithography. A red filter 131 is formed in the groove G corresponding to the first color sub-pixel region RSPX, a green filter 132 is formed in the groove G corresponding to the second color sub-pixel region GSPX, and a blue filter 133 is formed in the groove G corresponding to the third color sub-pixel region BSPX. Moreover, the surfaces of the filters 130 of each color are aligned with the surface of the substrate S, that is, the second portion 1212 of the through hole 121 is filled with the filter 130, and the smooth surface is conducive to the subsequent coating film formation thereon.

[0053] Step S3 : forming a color pixel layer 110 on the color filter 130 .

[0054] Figure 8 Schematic diagram of a cross section of forming a color pixel layer in an embodiment of the present application. A color pixel layer 110 is formed on the color filter 130, and the color pixel layer 110 includes a plurality of color conversion parts or light-transmitting parts of different colors. The present application does not particularly limit the number and color of sub-pixels and color conversion parts.

[0055] Step S3 further includes step S31.

[0056] Step S31 : forming a first light absorption layer 140 to define the position of the color pixel layer 110 .

[0057] Figure 7 FIG. 1 is a cross-sectional schematic diagram of forming the first light absorbing layer in the embodiment of the present application. Figure 7 As shown, the first light absorption layer 140 is located on the surface of the substrate S, and overlaps with the inorganic retaining wall structure 120 and the filter 130. More precisely, in each sub-pixel area, the first light absorption layer 140 can completely cover the inorganic retaining wall structure 120, but only partially overlaps with the filter 130. In addition, the portion of the first light absorption layer 140 that does not cover the filter 130 is defined as an opening AP. The first light absorption layer 140 is formed by a photolithography process. The first light absorption layer 140 can avoid crosstalk between adjacent pixels. Moreover, in this embodiment, the color pixel layer 110 and the first light absorption layer 140 have the same thickness, which is approximately in the range of 5μm-10μm. Therefore, the surface of the light conversion module 10 is flat, so that the light conversion module 10 is easy to combine with the light-emitting module in subsequent processes.

[0058] Step S4 : performing a hole-opening process on the substrate S to extend the plurality of grooves G and form a plurality of through holes penetrating the substrate, so as to form an inorganic retaining wall structure 120 .

[0059] Step S4 also includes step S41 and step S42. Step S41 is as follows: Figure 8 Step S42 is as shown. Fig. 9 shown.

[0060] Step S41: performing a thinning process on the substrate S to grind the substrate S to a predetermined thickness.

[0061] Fig. 9 FIG. 1 is a cross-sectional schematic diagram of a substrate thinning process in an embodiment of the present application. Fig. 9 As shown, a protective layer TAP is firstly attached to the surface of the substrate S having the color pixel layer 110. The protective layer TAP is a grinding tape (Back grinding tape, BGtape). Since the grinding tape has the property of resisting the strong acid and alkali solution in the etching process, it can protect the components of the light conversion module 10 from being damaged by the strong acid and alkali. Then, the substrate S with the grinding tape attached is transferred to the grinding machine table to grind the other surface of the substrate S without any components. The substrate S is ground until the predetermined thickness TH is reached and then stopped. Figure 8 As shown, the thickness TH of the substrate S after grinding is reduced. In this embodiment, the thickness TH of the substrate S is reduced from 700 μm to only 50 μm. However, the above embodiment is only an example, and the thickness of the substrate S is not particularly limited in this application. Since the manufacturing method of this embodiment adopts wafer grinding, that is, the thickness TH of the substrate S decreases as the grinding external force deepens, and the supporting force will be worse if the thickness TH of the substrate S is too thin, the thickness TH is limited to a minimum value, and the thickness of the inorganic retaining wall structure 120 is equal to the thickness TH of the substrate S after grinding. Therefore, the inorganic retaining wall structure 120 formed by wafer grinding is only limited to a minimum value. Therefore, the thickness TH of the inorganic retaining wall structure 120 can be designed according to the requirements of this application. That is to say, the thickness of the inorganic retaining wall structure 120 formed by the manufacturing method of this application is not limited to a maximum value.

[0062] Step S42 : performing a hole-opening process on the substrate S to extend the through hole 121 and form an inorganic retaining wall structure 120 .

[0063] Fig.10 It is a cross-sectional schematic diagram of the hole-opening process of the substrate S after the thickness is thinned in the embodiment of the present application. First, a photoresist is coated on the surface of the substrate S where no components are set, and then the photoresist is patterned by exposure and development. The portion of the surface of the substrate S where the photoresist is not coated defines the first width W1 of the through hole 121 in the inorganic retaining wall structure 120. Then, the substrate S is etched, and the etching end point is the upper surface of the filter 130 in the groove G of the substrate S. At this time, the photoresist is first removed, and then the grinding tape is irradiated with ultraviolet light to facilitate the peeling of the grinding tape from the substrate S. Then, as Fig.10 As shown, an adhesive layer 150 is formed on the surface of the substrate S having the components. The adhesive layer 150 is used to adhere the light emitting module 20 and the light conversion module 10 .

[0064] Advantageous Effects of the Invention

[0065] One of the beneficial effects of the present application is that in the light conversion module, display and manufacturing method thereof provided in the present application, the height of the inorganic retaining wall structure can have a preferred shielding effect to improve the contrast of the display through the technical means of "the inorganic retaining wall structure includes multiple through holes", "the through holes correspond to multiple first color sub-pixel areas, multiple second color sub-pixel areas and multiple third color sub-pixel areas respectively", "a filter is arranged at the bottom of the multiple through holes" and "the upper surface of the inorganic retaining wall structure is higher than the upper surface of each of the filters".

[0066] The contents disclosed above are only preferred feasible embodiments of the present application, and are not intended to limit the protection scope of the claims of the present application. Therefore, all equivalent technical changes made using the contents of the present application specification and drawings are included in the protection scope of the claims of the present application.

Claims

1. A light conversion module, applicable to a light emitting module having a plurality of light emitting components, characterized in that: The optical conversion module comprises: a color pixel layer having a plurality of first color sub-pixel regions, a plurality of second color sub-pixel regions, and a plurality of third color sub-pixel regions, wherein the color pixel layer comprises a plurality of first color conversion portions respectively located in the plurality of first color sub-pixel regions, a plurality of second color conversion portions respectively located in the plurality of second color sub-pixel regions, and a plurality of light-transmitting portions respectively located in the plurality of third color sub-pixel regions; an inorganic retaining wall structure, disposed on the color pixel layer and comprising a plurality of through holes, wherein the plurality of through holes respectively correspond to a plurality of first color sub-pixel regions, a plurality of second color sub-pixel regions, and a plurality of third color sub-pixel regions; and A plurality of filters are respectively disposed in the plurality of through holes, and each of the filters is located at the bottom of the corresponding through hole; Wherein, the upper surface of the inorganic retaining wall structure is higher than the upper surface of each of the filters.

2. The optical conversion module according to claim 1, characterized in that: The width of each of the color filters in the first direction is greater than the width of the corresponding first color conversion portion, the second color conversion portion or the light-transmitting portion in the first direction.

3. The optical conversion module according to claim 1, characterized in that: The upper surface of each of the filters is no higher than half of the height of the plurality of through holes.

4. The optical conversion module according to claim 1, characterized in that: Each of the plurality of through holes comprises: a first portion having a first width in a first direction; and A second portion is disposed below the first portion and adjacent to the color pixel layer, and is used to accommodate a corresponding plurality of the color filters. The second portion has a second width in the first direction that is greater than the first width.

5. The optical conversion module according to claim 4, characterized in that: The light conversion module further includes a first light absorbing layer disposed around the plurality of first color conversion portions, the plurality of first color conversion portions and the plurality of light-transmitting portions to define a corresponding plurality of openings.

6. The optical conversion module according to claim 5, characterized in that: The second width of the second portion in the first direction is greater than or equal to a corresponding width of the opening in the first direction.

7. The optical conversion module according to claim 1, characterized in that: The light conversion module further includes an adhesive layer disposed below the color pixel layer.

8. The optical conversion module according to claim 1, characterized in that: The plurality of first color conversion regions include a red conversion material, and the plurality of second color conversion regions include a green conversion material.

9. The optical conversion module according to claim 8, characterized in that: The red conversion material includes red quantum dots, and the green conversion material includes green quantum dots.

10. The optical conversion module according to claim 8, characterized in that: The filters corresponding to the first color sub-pixel regions are red filters, the filters corresponding to the second color sub-pixel regions are green filters, and the filters corresponding to the third color sub-pixel regions are blue filters.

11. The optical conversion module according to claim 1, characterized in that: The upper surface of the inorganic retaining wall structure has grinding marks.

12. The optical conversion module according to claim 1, characterized in that: The inorganic retaining wall structure is made of silicon or silicon carbide.

13. The optical conversion module according to claim 1, characterized in that: Each of the plurality of light-transmitting portions includes light-scattering particles.

14. A display, characterized in that: The display comprises: The optical conversion module according to any one of claims 1 to 13; a light emitting module, disposed on a light incident side of the light conversion module, Wherein, the light emitting module comprises: a circuit substrate; and A plurality of light-emitting components are arranged on the circuit substrate.

15. The display according to claim 14, characterized in that The light-emitting module also includes a second light-absorbing layer, which is arranged around the plurality of light-emitting components to define a corresponding plurality of light-emitting areas, and a width of each of the plurality of first color conversion portions, the second color conversion portions and the plurality of light-transmitting portions in the first direction is greater than or equal to a width of each of the light-emitting areas in the first direction.

16. The display according to claim 14, characterized in that The plurality of light emitting components are a plurality of blue light emitting diode chips or white light emitting diode chips.

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