Novel single crystal inspection method

Abstract

The invention belongs to the technical field of single crystal production, and relates to a novel single crystal inspection method which comprises the following steps: acquiring single crystal information, and starting a detection model; driving a dimension machine to carry out dimension detection, and recording a dimension measurement value; comparing the dimension measurement value with the dimension target value, if the requirement is met, determining that the dimension is qualified, otherwise, determining that the dimension is unqualified; driving an appearance machine to carry out appearance detection on the single crystals with qualified sizes and the single crystals with unqualified sizes, and recording appearance measurement values; comparing the appearance measurement value with an appearance target value, if the requirement is met, determining that the appearance is qualified, otherwise, determining that the appearance is unqualified; the single crystals with qualified sizes and qualified appearances continue to be subjected to the next process; the dimension machine and the appearance machine are both in linear connection with the detection model. The method has the beneficial effects that the measurement-related parameters are included in the detection model, the size detection and the appearance detection are sequentially performed on the single crystal, meanwhile, the comparison result is rapidly output, the detection steps are simplified, the detection accuracy is improved, and time and labor are saved.

Description

Technical Field

[0001] The invention belongs to the technical field of single crystal production and relates to a novel single crystal inspection method. Background Art

[0002] With the increasingly fierce competition in the new energy industry and the rapid development of the photovoltaic market, cost reduction and efficiency improvement have become the development trend of the industry, and at the same time, higher requirements have been placed on the efficiency of single crystal inspection. At present, single crystal inspection is mainly based on manual inspection. Each inspection line is fully staffed, the density of personnel is large, and there are safety hazards on site; the level of personnel is uneven, and inspectors need regular training. During inspection, they need to operate the mechanical arm to assist in clamping the single crystal for appearance and size inspection. The steps are cumbersome and there are errors in the use of inspection tools by personnel, which is time-consuming and laborious. Therefore, a new single crystal inspection method is needed to solve the above technical problems. Summary of the invention

[0003] In order to solve the above-mentioned technical problems, the present invention provides a new single crystal inspection method, which simplifies the inspection steps, controls the inspection cost, and improves the inspection efficiency.

[0004] The technical solution adopted by the present invention is: a new single crystal inspection method, characterized in that it includes the following steps:

[0005] Obtain single crystal information and start the detection model;

[0006] Drive the dimension machine to perform dimension inspection and record the dimension measurement value;

[0007] Compare the size measurement value with the size target value, calculate the difference between the two, and if the difference meets the requirement, the size is qualified, otherwise, the size is unqualified;

[0008] driving the appearance machine to perform appearance inspection on the single crystals with qualified size and the single crystals with unqualified size, and recording the appearance measurement values;

[0009] Compare the appearance measurement value with the appearance target value, calculate the similarity between the two, and if the requirements are met, the appearance is qualified, otherwise, the appearance is unqualified;

[0010] The single crystals with qualified size and appearance continue to match the support packaging process;

[0011] The dimensioning machine and the appearance machine are both linearly connected to the detection model.

[0012] Furthermore, the size measurement values ​​include the diameter, side length and arc length of the head, middle and tail measurement positions of the single crystal.

[0013] Furthermore, if all the differences meet a first safety threshold, the size is qualified; otherwise, the size is unqualified.

[0014] Furthermore, the first safety threshold is 0-0.06 mm.

[0015] Furthermore, the appearance measurement values ​​include primary indicators, secondary indicators and tertiary indicators, and their priorities are primary indicators>secondary indicators>tertiary indicators. When the similarities all meet the second safety threshold, the appearance is qualified, otherwise the appearance is unqualified.

[0016] Furthermore, the second safety threshold is 98% to 100%.

[0017] Furthermore, the single crystals that fail to meet the requirements in appearance and / or size enter a review inspection line for re-inspection.

[0018] Furthermore, the single crystal after re-testing meets both qualified appearance and qualified size, and continues to match the support packaging process.

[0019] Furthermore, the single crystal after re-testing cannot simultaneously meet the requirements of qualified appearance and qualified size, and is sent for secondary processing.

[0020] Furthermore, before obtaining the single crystal information, the accuracy of the sizing machine is verified by a verification rod.

[0021] The present invention relates to a novel single crystal inspection method, in which a detection model is set and connected to a dimension machine and an appearance machine, and parameters related to the measurement process are incorporated into the detection model. The single crystal is sequentially dimensioned and inspected for appearance, while the measured value is recorded, and the measured value is quickly compared with the target value in the system, and the comparison result is output, which simplifies the inspection steps and improves the accuracy of the inspection, saves time and effort, reduces the labor intensity of manual inspection, greatly improves the inspection efficiency, and avoids losses caused by manual errors to the greatest extent. In addition, single crystal inspection has a unified standard process, which reduces safety hazards at the inspection site. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a flow chart of an embodiment provided by the present invention. DETAILED DESCRIPTION

[0023] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments.

[0024] The present invention provides a novel single crystal inspection method, which is characterized by comprising the following steps:

[0025] Obtain single crystal information and start the detection model;

[0026] Drive the dimension machine to perform dimension inspection and record the dimension measurement value;

[0027] Compare the size measurement value with the size target value, calculate the difference between the two, if it meets the requirement, the size is qualified, otherwise it is unqualified;

[0028] Drive the appearance machine to perform appearance inspection on single crystals with qualified or unqualified sizes, and record the appearance measurement values;

[0029] Compare the appearance measurement value with the appearance target value and calculate the similarity between the two. If the requirements are met, the appearance is qualified, otherwise it is unqualified.

[0030] The single crystals with qualified size and appearance will continue to match the support packaging process;

[0031] The size machine and appearance machine are linearly connected to the inspection model. By performing size inspection and appearance inspection on the single crystal in turn, and synchronizing the data to the inspection model in real time, the inspection model receives the data information and processes it quickly to output the comparison results, which simplifies the inspection steps and improves the accuracy of the inspection, saving time and effort, while reducing the labor intensity of manual inspection, greatly improving the inspection efficiency, and avoiding losses caused by manual errors to the greatest extent. In addition, the inspection of single crystals has a unified standard process, which reduces safety hazards at the inspection site.

[0032] Preferably, the detection model is linearly connected to the centralized control unit. Information in the appearance detection and size detection process is synchronized to the centralized control unit, which is convenient for unified management and improves the accuracy and efficiency of the inspection.

[0033] Preferably, the size measurements include diameter, side length and arc length at the head, middle and tail measurement locations of the single crystal.

[0034] Preferably, all the differences meet the first safety threshold, which means the size is qualified, otherwise the size is unqualified. In this embodiment, when performing size detection, the diameter, side length and arc length of the head, middle and tail of the single crystal are measured by the size machine, a total of 9 parameters, the measurement position of the head is 50 mm from the head, and the measurement position of the tail is 50 mm from the tail. After multiple measurements, the maximum and minimum values ​​of each parameter are selected, a total of 18 items, and uploaded to the detection model. These 18 parameters are compared with the corresponding size target values ​​until all the differences meet the first safety threshold, then the size is qualified, otherwise the size is unqualified.

[0035] Preferably, the first safety threshold is 0-0.06 mm.

[0036] Preferably, the appearance measurement values ​​include primary indicators, secondary indicators and tertiary indicators, and their priorities are primary indicators>secondary indicators>tertiary indicators. When the similarities all meet the second safety threshold, the appearance is qualified, otherwise the appearance is unqualified. In this embodiment, the detection priority is primary indicators, secondary indicators and tertiary indicators. The primary indicators include chipping, line marks, gray skin and cracks. The secondary indicators include seams, watermarks, grinding wheel marks, edge chipping, knife marks, scratches, reverse knife marks, unpolished, color difference, bright spots and offset printing. The tertiary indicators include bright spots, collapsed edges, crystal gray skin, square rod gray skin, yin and yang surfaces, outer circle feel and plane feel, a total of 22 parameters. During actual measurement, the similarity between the measured values ​​of all appearance indicators and their corresponding target values ​​meets the second safety threshold, that is, the appearance is qualified, otherwise the appearance is unqualified.

[0037] Preferably, the second safety threshold is 98% to 100%.

[0038] Preferably, single crystals with unqualified appearance and / or unqualified size enter the review inspection line for re-inspection. In this embodiment, size inspection is performed first, and appearance inspection is required regardless of whether the inspection result is qualified or unqualified, so as to facilitate secondary processing in the later stage.

[0039] Preferably, the single crystal after re-inspection meets both qualified appearance and qualified size, and continues to match the support packaging process.

[0040] Preferably, if the single crystal after re-inspection fails to meet both the appearance and size requirements, it is sent for secondary processing.

[0041] Preferably, before obtaining the single crystal information, the accuracy of the dimensioning machine is verified by a verification rod. If the error between the detection data of the dimensioning machine and the actual data of the verification rod is ≤0.02mm, the dimension inspection and appearance inspection can be performed in sequence. If the error between the detection data of the dimensioning machine and the actual data of the verification rod is found to be greater than 0.02mm, the dimensioning machine needs to be calibrated first.

[0042] Embodiment 1:

[0043] Taking G12 single crystal as an example, its diameter is 294.9~295.2mm, side length is 210.05~210.25mm, arc length is 0.98~1.84mm. When testing, Figure 1 As shown, firstly, the accuracy of the dimensioning machine is verified by using a test rod prepared in advance, and then the detection model is started after obtaining the single crystal information.

[0044] The sizing machine is driven to perform multiple size inspections on the single crystal and record the size measurement values, including 9 parameters at the head, middle and tail. The maximum and minimum values ​​of each parameter are then uploaded to the inspection model. The above 18 values ​​are compared with their corresponding size target values, and the difference is calculated. If the difference is ≤0.06mm, the size is qualified, otherwise it is unqualified.

[0045] The appearance machine is driven to perform appearance inspection on both single crystals with qualified and unqualified sizes, and the appearance measurement values ​​are recorded, with a total of 22 parameters; the above 22 parameters are compared with their corresponding appearance target values, and the similarity between the two is calculated. If the similarity is ≥98%, it is a qualified product in appearance, and continues to match the support packaging process. Single crystals that contain unqualified appearance, unqualified size, or both unqualified enter the review inspection line for re-inspection. If the results after re-inspection meet both qualified size and qualified appearance, continue to match the support packaging process, otherwise send it to secondary processing.

[0046] The present invention relates to a novel single crystal inspection method, in which a detection model is set and connected to a dimension machine and an appearance machine, and parameters related to the measurement process are incorporated into the detection model. The single crystal is sequentially dimensioned and inspected for appearance, while the measured value is recorded, and the measured value is quickly compared with the target value in the system, and the comparison result is output, which simplifies the inspection steps and improves the accuracy of the inspection, saves time and effort, reduces the labor intensity of manual inspection, greatly improves the inspection efficiency, and avoids losses caused by manual errors to the greatest extent. In addition, single crystal inspection has a unified standard process, which reduces safety hazards at the inspection site.

[0047] The embodiments of the present invention are described in detail above, but the contents described are only preferred embodiments of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A novel single crystal inspection method, characterized in that: The steps include: Obtain single crystal information and start the detection model; Drive the dimension machine to perform dimension inspection and record the dimension measurement value; Compare the size measurement value with the size target value, calculate the difference between the two, and if the difference meets the requirement, the size is qualified, otherwise, the size is unqualified; driving the appearance machine to perform appearance inspection on the single crystals with qualified size and the single crystals with unqualified size, and recording the appearance measurement values; Compare the appearance measurement value with the appearance target value, calculate the similarity between the two, and if the requirements are met, the appearance is qualified, otherwise, the appearance is unqualified; The single crystals with qualified size and appearance continue to match the support packaging process; The dimensioning machine and the appearance machine are both linearly connected to the detection model.

2. The novel single crystal inspection method according to claim 1, characterized in that: The dimension measurements include diameters, side lengths, and arc lengths at the head, middle, and tail measurement locations of the single crystal.

3. The novel single crystal inspection method according to claim 2, characterized in that: If all the differences meet the first safety threshold, the size is qualified; otherwise, the size is unqualified.

4. The novel single crystal inspection method according to claim 3, characterized in that: The first safety threshold is 0-0.06 mm.

5. The novel single crystal inspection method according to any one of claims 1 to 4, characterized in that: The appearance measurement values ​​include primary indicators, secondary indicators and tertiary indicators, and their priorities are primary indicators>secondary indicators>tertiary indicators. When the similarities all meet the second safety threshold, the appearance is qualified, otherwise the appearance is unqualified.

6. The novel single crystal inspection method according to claim 5, characterized in that: The second safety threshold is 98% to 100%.

7. The novel single crystal inspection method according to claim 5, characterized in that: The single crystals that fail to meet the requirements in appearance and / or size enter the review inspection line for re-inspection.

8. The novel single crystal inspection method according to claim 7, characterized in that: After re-testing, the single crystal meets both the appearance and size requirements and continues to match the support packaging process.

9. The novel single crystal inspection method according to claim 7, characterized in that: After re-testing, the single crystal cannot meet both the qualified appearance and qualified size requirements and is sent for secondary processing.

10. The novel single crystal inspection method according to any one of claims 6 to 9, characterized in that: Before obtaining the single crystal information, the accuracy of the sizer is verified by a verification rod.

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