Method of forming semiconductor structure, semiconductor structure and computer program product

Abstract

A method of forming a semiconductor structure includes disposing a substrate on a substrate support disposed within a chamber apparatus of a semiconductor processing system; flowing a boron-containing precursor to the chamber device at a first boron-containing precursor mass flow rate; and depositing a first portion of the first SiGe: B layer using a boron-containing precursor. Increasing the mass flow rate of the boron-containing precursor to an intermediate boron-containing precursor flow rate; depositing a second portion of the first SiGe: B layer using a boron-containing precursor; further increasing the mass flow rate of the boron-containing precursor to the chamber device to a second boron-containing precursor mass flow rate; and depositing a second SiGe: B layer onto the first SiGe: B layer using a boron-containing precursor, an increase in mass flow of the boron-containing precursor to an intermediate boron-containing precursor mass flow limiting a boron concentration at an interface of the first SiGe: B layer and the second SiGe: B layer defined between the first SiGe: B layer and the second SiGe: B layer to be less than a boron concentration within the second SiGe: B layer. Semiconductor processing systems and related computer program products are also provided.

Description

Technical Field

[0001] The present disclosure relates generally to forming semiconductor structures. More particularly, the present disclosure relates to forming semiconductor structures and related computer program products during the fabrication of semiconductor devices. Background Art

[0002] For example, during the manufacture of semiconductor devices, material layers are typically deposited onto a substrate. Material layer deposition is typically accomplished by heating the substrate to a desired deposition pressure and exposing the substrate to a material layer precursor under selected environmental conditions to allow the material layer to be deposited onto the substrate. Once the material layer develops the desired property or properties, the substrate is typically sent for further processing to be suitable for the device being manufactured.

[0003] In some material layer deposition methods, deposition may require exposing the substrate to more than one material layer precursor. In the case where the precursors include components with disparate binding affinities and / or migration tendencies (e.g., boron), countermeasures may be required to offset the disparate affinities and migration tendencies, such as by stopping the deposition of one layer before depositing a capping layer. While generally satisfactory, deposition processes employing such countermeasures may prolong the deposition process.

[0004] Such systems and methods have been generally accepted for their intended purposes. However, there remains a need for improved methods of forming semiconductor structures, semiconductor processing systems, and related computer program products. The present disclosure provides a solution to this need. Summary of the invention

[0005] A method for forming a semiconductor processing system is provided. The method includes: placing a substrate on a substrate support arranged in a chamber device of the semiconductor processing system; flowing a boron-containing precursor to the chamber device at a first boron-containing precursor mass flow rate; and depositing a first portion of a first SiGe:B layer using the boron-containing precursor. Increasing the mass flow rate of the boron-containing precursor to an intermediate boron-containing precursor flow rate; depositing a second portion of the first SiGe:B layer using the boron-containing precursor; further increasing the mass flow rate of the boron-containing precursor to the chamber device to a second boron-containing precursor mass flow rate; and depositing a second SiGe:B layer onto the first SiGe:B layer using the boron-containing precursor, the increase in the mass flow rate of the boron-containing precursor to the intermediate boron-containing precursor mass flow rate limiting the boron concentration at the interface of the first SiGe:B layer and the second SiGe:B layer defined between the first SiGe:B layer and the second SiGe:B layer to be less than the boron concentration in the second SiGe:B layer.

[0006] In addition to or instead of one or more of the features described above, other examples of the method may include forming a first portion of the first SiGe:B layer during a first partial deposition interval, forming a second portion of the first SiGe:B layer during a second partial deposition interval, and the second partial deposition interval is shorter than the first partial deposition interval.

[0007] In addition to or in lieu of one or more of the above features, other examples of the method may include a mass flow rate of the first SiGe:B layer intermediate boron-containing precursor between about 110% and about 200% of the mass flow rate of the first boron-containing precursor of the first SiGe:B layer. The method may include a mass flow rate of the second boron-containing precursor of the first SiGe:B layer between about 150% and about 250% of the mass flow rate of the first SiGe:B layer intermediate boron-containing precursor.

[0008] In addition to or in lieu of one or more of the features described above, other examples of the method may include the second partial deposition interval being between about 10% and about 40% of the first partial deposition interval.

[0009] In addition to or in lieu of one or more of the features described above, other examples of the method may include that the mass flow rate of the boron-containing precursor may be substantially constant during the first portion of the deposition interval.

[0010] In addition to or in lieu of one or more of the features described above, other examples of the method may include that the mass flow rate of the boron-containing precursor may be gradually increased during the second portion of the deposition interval.

[0011] In addition to or in lieu of one or more of the features described above, other examples of the method may include flowing a silicon-containing precursor to a chamber device during deposition of a first portion of a first SiGe:B layer; flowing a germanium-containing precursor to a chamber device during deposition of a first portion of a first SiGe:B layer; and increasing a ratio of a germanium-containing precursor mass flow rate (and / or mass) to a silicon-containing precursor mass flow rate (and / or mass) during deposition of a second portion of the first SiGe:B layer.

[0012] In addition to or in lieu of one or more of the features described above, other examples of the method may include: increasing the ratio of a germanium-containing precursor to a silicon-containing precursor flowing to the chamber device during deposition of the second portion of the SiGe:B layer includes: flowing the germanium-containing precursor to the chamber device at a first germanium-containing precursor mass flow rate during deposition of the first portion of the first SiGe:B layer; increasing the first germanium-containing precursor mass flow rate to a second germanium-containing precursor mass flow rate during deposition of the second portion of the first SiGe:B layer; and flowing the germanium-containing precursor to the chamber device at the second germanium-containing precursor mass flow rate during deposition of the second SiGe:B layer.

[0013] In addition to or in lieu of one or more of the features described above, other examples of the method can include that the second germanium-containing precursor mass flow rate can be between about 150% and about 400% of the first germanium-containing precursor mass flow rate.

[0014] In addition to or in lieu of one or more of the features described above, other examples of the method may include that the second germanium-containing precursor mass flow rate may be maintained substantially constant during deposition of the second SiGe:B layer.

[0015] In addition to or in lieu of one or more of the features described above, other examples of the method may include that during definition of the interface between the first SiGe:B layer and the second SiGe:B layer, a mass flow rate of the germanium-containing precursor may be maintained substantially constant.

[0016] In addition to or in lieu of one or more of the features described above, other examples of the method may include increasing the ratio of the germanium-containing precursor to the silicon-containing precursor flowing to the chamber device during deposition of the second portion of the SiGe:B layer may include: during deposition of the first portion of the first SiGe:B layer, flowing the silicon-containing precursor to the chamber device at a first silicon-containing precursor mass flow rate; during deposition of the second portion of the first SiGe:B layer, increasing the first silicon-containing precursor mass flow rate to a second silicon-containing precursor mass flow rate; and during deposition of the second SiGe:B layer, flowing the silicon-containing precursor to the chamber device at the second silicon-containing precursor mass flow rate.

[0017] In addition to or in lieu of one or more of the features described above, other examples of the method can include that the second silicon-containing precursor mass flow rate can be between about 105% and about 125% of the first silicon-containing precursor mass flow rate.

[0018] In addition to or instead of one or more of the features described above, other examples of the method may include maintaining a constant mass flow rate of a first silicon-containing precursor flowing to a chamber device during definition of a first SiGe:B layer and a second SiGe:B layer interface between the first SiGe:B layer and the second SiGe:B layer.

[0019] In addition to or in lieu of one or more of the features described above, other examples of the method may include flowing the etchant to the chamber device at a first etchant mass flow rate during deposition of a first portion of the first SiGe:B layer; increasing the flow rate of the etchant to a second etchant mass flow rate during deposition of a second portion of the first SiGe:B layer; and flowing the etchant to the chamber device at the second etchant mass flow rate during deposition of the second SiGe:B layer.

[0020] In addition to or as an alternative to one or more of the features described above, other examples of the method can include the second etchant mass flow rate being between about 150% and about 600% of the first etchant mass flow rate.

[0021] In addition to or instead of one or more of the features described above, other examples of the method may include depositing the first SiGe:B layer and the second SiGe:B layer continuously and without interruption.

[0022] In addition to one or more of the above features, or as an alternative, other examples of the method may include a substrate having a trench defined in an upper surface of the substrate. The method may also include depositing a silicon germanium (SiGe) layer onto a lower surface and sidewalls defining the trench, and depositing a first SiGe:B layer onto the SiGe layer.

[0023] In addition to or instead of one or more of the features described above, other examples of the method may include a first SiGe:B layer being deposited within the trench and onto the SiGe layer, a second SiGe:B layer protruding above the upper surface of the substrate, and the method further comprising depositing a boron-doped silicon layer onto the second SiGe:B layer.

[0024] In addition to or in lieu of one or more of the features described above, other examples of the method may include depositing a SiGe interlayer onto the second SiGe:B layer. It is contemplated that a boron-doped silicon (Si:B) layer may be deposited onto the SiGe interlayer.

[0025] In addition to or in lieu of one or more of the features described above, other examples of the method may include depositing a SiGe intermediate layer by stopping the flow of a boron-containing precursor and simultaneously reducing the flow of a germanium-containing precursor to the chamber, and thereafter continuing to flow the germanium-containing precursor to the chamber before resuming the flow of the boron-containing precursor to the chamber. The flow of an etchant to the chamber may be reduced while reducing the flow of the germanium-containing precursor, and the etchant flows at a reduced flow rate until the boron-containing precursor resumes flowing to the chamber.

[0026] A semiconductor structure is provided. The semiconductor structure is formed by the above method for forming a semiconductor structure, the second SiGe:B layer has a greater thickness than the first SiGe:B layer, the second SiGe:B layer has a greater germanium concentration than the first SiGe:B layer, and the second SiGe:B layer has a greater boron concentration than the first SiGe:B layer.

[0027] In addition to or in lieu of one or more of the features described above, other examples of semiconductor structures may include a first SiGe:B layer and a second SiGe:B layer defining a first SiGe:B layer and second SiGe:B layer interface therebetween, and during a method in which the second SiGe:B layer is continuously and uninterruptedly deposited onto the first SiGe:B layer, a boron concentration at the interface between the first SiGe:B layer and the second SiGe:B layer is less than a boron concentration in the second SiGe:B layer.

[0028] In addition to or in lieu of one or more of the features described above, other examples of semiconductor structures may include the second SiGe:B layer having a boron concentration and a second SiGe layer thickness. The second SiGe:boron concentration may be substantially uniform throughout the second SiGe:B layer thickness.

[0029] In addition to or in lieu of one or more of the features described above, other examples of semiconductor structures may include a first SiGe:B layer having a first portion and an overlying second portion, the boron concentration may be substantially uniform within the thickness of the first portion of the first SiGe:B layer, and the boron concentration may be substantially uniform over the thickness of the second portion of the second SiGe:B layer.

[0030] In addition to or in lieu of one or more of the above features, other examples of semiconductor structures may include a SiGe interlayer may be deposited onto the second SiGe:B layer, and a boron-doped silicon (Si:B) layer may be deposited onto the second SiGe:B layer. The SiGe interlayer may consist of or consist essentially of SiGe. The SiGe interlayer may have a greater germanium concentration than the second SiGe:B layer. The Si:B layer may consist of or consist essentially of boron-doped silicon.

[0031] A computer program product is provided. The computer program product includes a non-transitory machine-readable medium having instructions, which, when read by a processor, cause the processor to: place a substrate on a substrate support disposed in a chamber device of a semiconductor processing system; flow a boron-containing precursor to the chamber device at a first boron-containing precursor mass flow rate; deposit a first portion of a first SiGe:B layer using the boron-containing precursor; increase the mass flow rate of the boron-containing precursor to an intermediate boron-containing precursor flow rate; deposit a second portion of the first SiGe:B layer using the boron-containing precursor; further increase the mass flow rate of the boron-containing precursor to the chamber device to a second boron-containing precursor mass flow rate; and deposit a second SiGe:B layer onto the first SiGe:B layer using the boron-containing precursor, such that the increase in the mass flow rate of the boron-containing precursor to the intermediate boron-containing precursor mass flow rate limits the boron concentration at the interface of the first SiGe:B layer and the second SiGe:B layer defined between the first SiGe:B layer and the second SiGe:B layer to be less than the boron concentration in the second SiGe:B layer.

[0032] The present invention summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the examples of the following disclosure. The present invention summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] These and other features, aspects and advantages of the present invention disclosed herein are described below with reference to the accompanying drawings of certain embodiments, which are intended to illustrate rather than to limit the present invention.

[0034] Figure 1 is a schematic diagram of a semiconductor processing system showing precursors flowing from a precursor delivery apparatus to a chamber apparatus to form a semiconductor structure on a substrate located within the chamber apparatus;

[0035] Figure 2 and Figure 3 According to the example of this disclosure Figure 1 A partial schematic diagram of a semiconductor processing system showing a precursor delivery apparatus and a chamber apparatus according to an example of the present disclosure;

[0036] Figure 4 According to the example of this disclosure Figure 1 A cross-sectional side view of a semiconductor structure of FIG. 1 , showing the semiconductor structure formed within a trench defined within an upper surface of a substrate;

[0037] Figures 5 to 10 According to the example of this disclosure Figure 1 sequential views of a portion of a substrate sequentially illustrating semiconductor structures formed within trenches defined within an upper surface of the substrate;

[0038] Fig.11 is forming Figure 1 a graph of precursor and etchant mass flow rates during the formation of a semiconductor structure of the present invention, comparatively illustrating changes in precursor mass flow rates to limit boron accumulation at an interface defined between a first boron-doped silicon germanium layer and a second boron-doped silicon germanium layer; and

[0039] Figures 12 to 16 is used Figure 1 A block diagram of a method of fabricating a semiconductor structure using a semiconductor processing system of the present invention is shown, illustrating operations of the method according to illustrative and non-limiting examples of the method.

[0040] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the relative sizes of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0041] Reference will now be made to the drawings, wherein like reference numerals represent similar structural features or aspects of the subject disclosure. For purposes of explanation and illustration, and not limitation, a partial view of an example of a semiconductor processing system according to the present disclosure is shown in FIG. Figure 1 , and is generally indicated by the reference numeral 100. Figure 2-16 Other examples of semiconductor processing systems, semiconductor structures, and methods of manufacturing semiconductor structures or aspects thereof according to the present disclosure are provided in, as will be described. The systems and methods of the present disclosure can be used to form semiconductor structures including boron-doped silicon germanium (SiGe:B) layers, such as in semiconductor devices using boron-doped SiGe:B layers to control electrical properties within semiconductor devices having three-dimensional device architectures, three-dimensional device structures such as gate-all-around (GAA) and three-dimensional dynamic random access memory (3D DRAM) semiconductor devices, but the present disclosure is generally not limited to any particular semiconductor device structure or particular application of a semiconductor structure having a SiGe:B layer.

[0042] refer to Figure 1 , a semiconductor processing system 100 is shown. The semiconductor processing system 100 generally includes a precursor supply device 102, a chamber device 104, an exhaust device 106, and a controller 108. The precursor supply device 102 is connected to the chamber device 104 and is configured to provide a flow of precursor 10 to the chamber device 104. The chamber device 104 is connected to the exhaust device 106, which is configured to expose the substrate 2 located in the chamber device 104 to the precursor 10 to form a semiconductor structure 200. The exhaust device 106 is connected to the chamber device 104 and is configured to transfer the flow of residual precursor and / or reaction product 12 to the external environment 14 outside the chamber device 104, and in this regard may include one or more of a vacuum pump and / or an abatement device such as a scrubber. The controller 108 is operably connected to the semiconductor processing system 100 (e.g., to one or more of the precursor delivery apparatus, the chamber apparatus 104, and the exhaust apparatus 106), such as via a wired or wireless link 110, and is configured to form the semiconductor structure 200, such as using a computer program product 300 having instructions recorded thereon to cause the semiconductor processing system 100 to perform a method 400 for manufacturing a semiconductor structure (e.g., Fig. 9 The operation of (as shown) will be described.

[0043] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that may be modified or on which a device, circuit, or film may be formed. The substrate may be continuous or non-continuous; rigid or flexible; solid or porous; and combinations thereof. The substrate may be in any form, such as (but not limited to) a powder, a plate, or a workpiece. Plate-like substrates may include wafers of various shapes and sizes, including, for example, 300 mm wafers.

[0044] The substrate may be formed of a semiconductor material, including, for example, silicon (Si), silicon germanium (SiGe), silicon oxide (SiO 2 ), gallium arsenide (GaAs), gallium nitride (GaN), and silicon carbide (SiC). The substrate may include a pattern or may be a blanket substrate without a pattern. For example, a substrate in powder form may be used in drug manufacturing. The porous substrate may include one or more polymers. Examples of workpieces may include medical devices (such as stents and syringes), jewelry, tool equipment, components for battery manufacturing (such as anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0045] The continuous substrate can extend beyond the boundaries of the treatment chamber where the deposition process occurs. In some processes, the continuous substrate can be moved through the treatment chamber so that the process continues until the end of the substrate is reached. A continuous substrate can be provided from a continuous substrate feed system to allow the continuous substrate to be manufactured and output in any suitable form. Non-limiting examples of continuous substrates may include thin sheets, nonwoven films, rolls, foils, nets, flexible materials, bundled continuous filaments or fibers (e.g., ceramic fibers or polymer fibers). The continuous substrate may also include a carrier or thin sheet on which one or more non-continuous substrates are mounted.

[0046] Reference Figure 2 , a precursor supply device 102 according to an example of the present disclosure is shown. In the example shown, the precursor supply device 102 includes a silicon-containing precursor source 112, a germanium-containing precursor source 114, and a boron-containing precursor source 116. As shown and described herein, the precursor supply device 102 also includes a diluent / carrier gas source 118 and an etchant source 120. In some examples, the precursor supply device 102 can be as shown and described in U.S. Patent No. 11,053,591 issued to Ma et al. on July 6, 2021, the contents of which are incorporated herein by reference in their entirety. Although shown and described herein as having certain elements and a particular arrangement, it should be understood and appreciated that the precursor supply arrangement 102 may include other elements and / or exclude elements shown and described in other examples herein, and / or have a different arrangement in other examples, and still be within the scope of the present disclosure.

[0047] The silicon-containing precursor source 112 includes a silicon-containing precursor 16 and is connected to the chamber device 104, for example, via a silicon-containing precursor supply valve 122, and is configured to flow the silicon-containing precursor 16 to the chamber device 104. The silicon-containing precursor supply valve 122 can be operably associated with the controller 108, can include a mass flow controller (MFC) device, and can cooperate with one or more of a mass flow meter and a diverter valve to flow the silicon-containing precursor 16 to the chamber device 104. In some examples, the silicon-containing precursor 16 can include a non-chlorinated silicon-containing precursor. Non-limiting examples of suitable silicon-containing precursors include silane (SiH 4 ), disilane (S2 H 6 ) and trisilane (Si 3 H 8 According to some examples, the silicon-containing precursor 16 may include a chlorinated silicon-containing precursor. Non-limiting examples of chlorinated silicon-containing precursors include dichlorosilane (H 2 SiCl 2 ) and trichlorosilane (HCl 3 In view of the present disclosure, those skilled in the art will appreciate that other silicon-containing precursors and mixtures of the above silicon-containing precursors may be used and still be within the scope of the present disclosure.

[0048] The germanium-containing precursor source 114 includes a germanium-containing precursor 18 and is connected to the chamber device 104, for example, through a germanium-containing precursor supply valve 124, and is configured to flow the germanium-containing precursor 18 to the chamber device 104. The germanium-containing precursor supply valve 124 can be operably associated with the controller 108, can include an MFC device, and can cooperate with one or more of a mass flow meter and a diverter valve to flow the germanium-containing precursor 18 to the chamber device 104. In some examples, the germanium-containing precursor 18 can include germanium ethane (GeH 4 ), digermane (Ge 2 H 6 ), trigermane (Ge 3 H 8 ) or germanium silane (GeH 6 According to some examples, the germanium-containing precursor 18 may include a halogenated germanium-containing precursor, such as germanium bromide (GeBr 4 ) and germanium tetrachloride (GeCl 4 ). In view of the present disclosure, one skilled in the art will appreciate that the germanium-containing precursor 18 may include other germanium-containing precursors and / or mixtures including one or more of the foregoing germanium-containing precursors and still be within the scope of the present disclosure.

[0049] The boron-containing precursor source 116 includes a boron-containing precursor 20 and is connected to the chamber device 104, for example, through a boron-containing precursor supply valve 126, and is configured to flow the boron-containing precursor 20 to the chamber device 104. The boron-containing precursor supply valve 126 is operably associated with the controller 108, and may include an MFC device, and may cooperate with one or more of a mass flow meter and a diverter valve to flow the boron-containing precursor 20 to the chamber device 104. In some examples, the boron-containing precursor 20 may include diborane (B 2 H 6 According to some examples, the boron-containing precursor 20 may include boron trichloride (BCl 3 ). In view of the present disclosure, those skilled in the art will appreciate that the boron-containing precursor 20 may include other boron-containing precursors and / or mixtures including one or more of the foregoing boron-containing precursors and still be within the scope of the present disclosure.

[0050] The diluent / carrier gas source 118 includes the diluent / carrier gas 22 and is connected to the chamber device 104, for example, through the diluent / carrier gas supply valve 128, and is configured to flow the diluent / carrier gas 22 to the chamber device 104. In this regard, the diluent / carrier gas supply valve 128 can be operably associated with the controller 108, can be incorporated into the MFC device, and can cooperate with one or more of the mass flow meter and the diverter valve to flow the diluent / carrier gas 22 to the chamber device 104. On the other hand, the diluent / carrier gas source 118 can be configured to mix the diluent / carrier gas 22 with one or more of the silicon-containing precursor 16, the germanium-containing precursor 18, and the boron-containing precursor 20 to flow (and thereby deliver) to the chamber device 104 together with one or more of the aforementioned precursors. In some examples, the diluent / carrier gas 22 can include a rare gas, such as argon (Ar), helium (He), and krypton (Kr). According to some examples, the diluent / carrier gas 22 can include nitrogen (N 2 ), hydrogen (H 2 ) or a mixture including one or more of the foregoing diluents / carrier gases. In view of the present disclosure, those skilled in the art will appreciate that other diluents / carrier gases, or mixtures of the above gases including other diluents / carrier gases, may be used and still be within the scope of the present disclosure.

[0051] The etchant source 120 includes the etchant 24 and is connected to the chamber device 104, for example, via an etchant supply valve 130, and is configured to flow the etchant 24 to the chamber device 104. In this regard, the etchant supply valve 130 can be operatively associated with the controller 108, can be incorporated into the MFC device, and can cooperate with one or more of a mass flow meter and a diverter valve to flow the etchant 24 to the chamber device 104. On the other hand, the etchant source 120 can be configured to mix the etchant 24 with one or more of the silicon-containing precursor 16, the germanium-containing precursor 18, and the boron-containing precursor 20 to co-flow the etchant 24 with one or more of the foregoing precursors to the chamber device 104. In some examples, the etchant can include a halide-containing material, such as chlorine (Cl 2 ) and / or hydrochloric acid (HCl). In view of the present disclosure, those skilled in the art will understand that other etchants may be employed and still be within the scope of the present disclosure.

[0052] refer to Figure 3, shows a chamber apparatus 104 and a controller 108 according to an example of the present disclosure. In the example shown, the chamber apparatus 104 has a single wafer cross-flow apparatus and in this regard includes a chamber body 132, an injection flange 134, and an exhaust flange 136. On the other hand, the chamber apparatus 104 may also include an upper heater element array 138, a lower heater element array 140, a partition 142, a substrate support 144, a support member 146, an axis member 148, and a lift and rotation module 150. Although shown and described herein as including certain elements and having a specific arrangement, it should be understood and appreciated that the chamber apparatus 104 may have a different arrangement or include additional elements and / or exclude the elements shown and described herein and still be within the scope of the present disclosure.

[0053] The chamber body 132 is formed of a transparent material 152 (e.g., transmitting electromagnetic radiation within the infrared band), and has an upper wall 154, a lower wall 156, a first side wall 158, and a second side wall 160. The upper wall 154 extends between an injection end 162 and a longitudinally opposite discharge end 164 of the chamber body 132. The lower wall 156 is separated from the upper wall 154 by an interior 166 of the chamber body 132, extends between the injection end 162 and the discharge end 164 of the chamber body 132, and is connected to the upper wall 154 by the first side wall 158 and the second side wall 160. In some examples, the transparent material 152 may include a ceramic material, such as quartz, fused silica, and sapphire. According to some examples, the chamber body 132 may include a plurality of external ribs extending around the outside of the chamber body 132 and longitudinally spaced from each other between the injection end 162 and the discharge end 164 of the chamber body 132. Although shown and described herein as having a generally planar shape, it should be understood and appreciated that either (or both) of the upper wall 154 and the lower wall 156 may define an arcuate profile and / or have a generally dome-like shape and still be within the scope of the present disclosure.

[0054] The injection flange 134 is adjacent to the injection end 162 of the chamber body 132 and couples the precursor supply 102 to the chamber body 132. The injection flange 134 is also configured to receive the precursor supplied by the precursor supply 102 ( Figure 1 The precursor 10 provided by the chamber 132 is delivered to the interior 166 of the chamber body 132, for example, to provide lateral (left-right) mass flow control of the precursor 10. The exhaust flange 136 is adjacent to the exhaust end 164 of the chamber body 132, connects the chamber body 132 to the exhaust device 106, and is configured to deliver residual precursor and / or reaction product 12 released by the chamber device 104 during the formation of the semiconductor structure 200 to the exhaust device 106 ( Figure 1 shown).

[0055] The upper heater element array 138 is supported above the upper wall 154 of the chamber body 132 and is configured to transfer heat into the interior 166 of the chamber body 132 through the upper wall 154 of the chamber body 132, for example, using electromagnetic radiation in the infrared band transmitted by the transparent material 152 forming the upper wall 154 of the chamber body 132 to radiate heat into the interior 166 of the chamber body 132. The lower heater element array 140 is similar to the upper heater element array 138, but is additionally supported below the lower wall 156 of the chamber body 132 and is configured to transfer heat into the interior 166 of the chamber body 132 through the lower wall 156 of the chamber body 132. In some examples, the upper heater element array 138 may include a plurality of upper linear lamps, the lower heater element array 140 may include a plurality of lower linear lamps, and the plurality of lower linear lamps may be orthogonal relative to the plurality of upper linear lamps. According to certain examples, a plurality of upper linear lights may extend transversely between the first side wall 158 and the second side wall 160, with the plurality of linear lights longitudinally spaced apart from one another between the injection end 162 and the discharge end 164 of the chamber body 132. It is also contemplated that a plurality of upper linear lights may extend longitudinally between the injection end 162 and the discharge end 164 of the chamber body 132, and be laterally spaced apart from one another between the first side wall 158 and the second side wall 160, and still be within the scope of the present disclosure. In view of the present disclosure, one skilled in the art will appreciate that either (or both) of the upper heater element array 138 and the lower heater element array 140 may include bulb or spotlight type heater elements, and still be within the scope of the present disclosure.

[0056] The partition 142 is formed of an opaque material 168 (e.g., a material that is opaque to electromagnetic radiation within the infrared band), is fixed within the interior 166 of the chamber body 132, and divides the interior 166 of the chamber body 132 into an upper chamber 170 and a lower chamber 172. The partition 142 further defines a hole 174, which in turn fluidically couples the upper chamber 170 of the interior 166 of the chamber body 132 to the lower chamber 172. The substrate support 144 is supported to rotate R about a rotation axis 176 extending through the hole 174, is at least partially disposed within the hole 174, and is configured to support the substrate 2 during the formation of the semiconductor structure 200 onto the substrate 2. In this regard, it is contemplated that the substrate support 144 can be formed of an opaque material (e.g., the opaque material 168) and optically coupled to at least one of the upper heater element array 138 and the lower heater element array 140 through the upper wall 154 and the lower wall 156 of the chamber body 132, respectively. In certain examples, opaque material 168 may include carbon-containing materials and / or silicon carbide.

[0057] The support member 146 is disposed within the lower chamber 172 of the chamber body 132 along a rotation axis 176, is rotationally fixed relative to the substrate support 144, and couples the substrate support 144 to the shaft member 148. The shaft member 148 is rotationally fixed relative to the support member 146, extends through the lower wall 156 of the chamber body 132 and into the environment outside the chamber body 132, and couples the substrate support 144 to the lift and rotation module 150 through the support member 146. The lift and rotation module 150 is operably connected to the substrate support 144 and is configured to rotate the substrate support 144 about the rotation axis 176 during the formation of the semiconductor structure 200 on the substrate 2. The lift and rotation module 150 may be further configured to, for example, cooperate with the gate valve 178 and the substrate transfer robot 180 to place a substrate (e.g., substrate 2) on and remove it from the substrate support 144. In some examples, either (or both) support member 146 and shaft member 148 may be formed from a transparent material, such as transparent material 152 .

[0058] In the illustrated example, the controller 108 includes a device interface 182, a processor 184, a user interface 186, and a memory 188. The device interface 182 couples the controller 108 to one or more of the precursor supply 102, the chamber 104, and the exhaust 106, for example, via a wired or wireless link 110. The processor 184 is configured to communicate with the device interface 182 and the memory 188, and is operably connected to the user interface 186, for example, to receive input and / or provide user output therethrough. The memory 188 includes a non-transitory machine-readable medium having a plurality of program modules 190 recorded thereon, which, when read by the processor 184, cause the processor 184 to perform certain operations. Among these operations is a method 400 (e.g., of manufacturing a semiconductor structure (e.g., semiconductor structure 200) Fig. 9 Although shown and described herein as including certain elements and having a particular arrangement in the illustrated example, it should be understood and appreciated that the controller 108 may include additional elements and / or exclude elements shown and described herein, or have a different architecture (e.g., a distributed computing architecture), and still be within the scope of the present disclosure.

[0059] refer to Figure 4, a semiconductor structure 200 is shown. In the example shown, the semiconductor structure 200 covers the substrate 2 and includes a silicon germanium (SiGe) layer 202, a first boron-doped silicon germanium (SiGe:B) layer 204, and a second SiGe:B layer 206. The semiconductor structure 200 also includes a SiGe intermediate layer 240, a boron-doped silicon (Si:B) layer 208, a channel 210, and a gate 212. The substrate 2 defines a trench 6 within the upper surface 4 of the substrate 2. The trench 6 has a bottom 8 and sidewalls 3, extends into the bulk material forming the substrate 2, and is at least partially defined by a silicon (Si)-containing material. It is contemplated that the trench 210 covers the upper surface 4 of the substrate 2 and is laterally offset from the trench 6. It is also contemplated that the gate 212 overlies (e.g., is deposited onto) the channel 210, is also laterally offset from the trench 6, and is configured to cooperate with the channel 210 within a semiconductor device including the semiconductor structure 200, such as a fin field effect transistor (finFET) semiconductor device, a GAA semiconductor device, or a 3D DRAM semiconductor device.

[0060] The SiGe layer 202 is arranged (e.g., formed or deposited) within the trench 6, covering the bottom 8 and sidewalls 3 of the trench 6, and can be conformally deposited on the bottom 8 and sidewalls 3 of the trench 6. In some examples, the SiGe layer 202 can have a SiGe layer germanium concentration 214 between about 5% and about 20%, such as between about 5% and about 10%, or between about 10% and about 15%, or even between about 15% and about 20%. According to some examples, the SiGe layer 202 can have a SiGe layer thickness 216 between about 50 angstroms and about 450 angstroms, such as between about 50 angstroms and about 200 angstroms, or between about 200 angstroms and about 350 angstroms, or even between about 350 angstroms and about 600 angstroms. It is contemplated that the SiGe layer 202 can be epitaxial (e.g., single crystalline), and the silicon-containing material defines the trench 6. It is also contemplated that SiGe layer 202 may consist of or consist essentially of silicon germanium, and that SiGe layer 202 may be compositionally uniform or compositionally graded.

[0061] The first SiGe:B layer 204 can be arranged (e.g., formed or deposited) within the trench 6, covering the SiGe layer 202, and conformally deposited onto the SiGe layer 202. In some examples, the first SiGe:B layer 204 can have a first SiGe:B layer germanium concentration 218 between about 15% and about 35%. For example, the first SiGe:B layer germanium concentration 218 can be between about 15% and about 25%, or between about 25% and about 35%, or even between about 35% and about 45%. According to some examples, the first SiGe:B layer 204 can have a first SiGe:B layer germanium concentration 218 between about 5e 18 Atoms / cubic centimeter (cm 3 ) and about 1e 20 Atom / cm3 In this regard, the first SiGe:B layer may have a first SiGe:B boron concentration 220 of about 5e 18 Atom / cm 3 and about 5e 19 Atom / cm 3 Between, or about 5e 19 Atom / cm 3 and about 1e 20 Atom / cm 3 between, or even around 1e 20 Atom / cm 3 and about 5e 20 Atom / cm 3 It is contemplated that the first SiGe:B layer 204 may have a first SiGe:B layer thickness 222 between about 200 angstroms and about 500 angstroms, such as between about 200 angstroms and about 350 angstroms, or between about 350 angstroms and about 500 angstroms, or even between about 500 angstroms and about 650 angstroms. It is also contemplated that the first SiGe:B layer 204 may be epitaxial (e.g., single crystalline), a silicon germanium material forms the SiGe layer 202, the first SiGe:B layer 204 may consist of or consist essentially of a boron-doped silicon germanium material, and the first SiGe layer may be compositionally uniform or compositionally graded in terms of one (or both) of a germanium concentration and a boron concentration.

[0062] The second SiGe:B layer 206 is at least partially disposed within the trench 6, covers the first SiGe:B layer 204, and can be conformally deposited onto the first SiGe:B layer 204. The second SiGe:B layer 206 can further protrude from the trench 6 and above the upper surface 4 of the substrate 2, and laterally separate the channel 210 from the channel of the adjacent semiconductor device. The second SiGe:B layer 206 can further separate the channel 210 from the channel of the adjacent semiconductor device (at least partially) and protrude from the trench 6 in the opposite direction to the channel 210. In some examples, the second SiGe:B layer 206 can have a second SiGe:B layer germanium concentration 224 between about 30% and about 75%, for example, between about 30% and about 45%, or between about 45% and about 60%, or even between about 60% and about 75% germanium. According to some examples, the second SiGe:B layer 206 can have a second SiGe:B layer boron concentration 226. The second SiGe:B boron concentration layer may be approximately 1e 19 Atom / cm 3 and about 5e 20 Atom / cm 3 between, for example, about 1e 19 Atom / cm 3 and about 5e 19Atom / cm 3 Between, or about 5e 19 Atom / cm 3 and about 1e 20 Atom / cm 3 between, or even around 1e 20 Atom / cm 3 and about 5e 20 Atom / cm 3 . It is contemplated that the second SiGe:B layer 206 may have a second SiGe:B layer thickness 228 between about 300 angstroms and about 900 angstroms. In this regard, the second SiGe:B layer thickness 228 may be between about 300 angstroms and about 500 angstroms, or between about 500 angstroms and about 700 angstroms, or even between about 700 angstroms and about 900 angstroms. It is also contemplated that the second SiGe:B layer 206 may be epitaxial (e.g., single crystalline), the boron-doped silicon germanium material forming the first SiGe:B layer 204, and the second SiGe:B layer 206 may consist of or consist essentially of a boron-doped silicon germanium material that is compositionally different from the first SiGe:B layer 204.

[0063] The SiGe interlayer 240 covers the second SiGe:B layer 206 and can be conformally deposited onto the second SiGe:B layer 206. In some examples of the present disclosure, the SiGe interlayer 240 can be substantially free of boron. According to some examples, the SiGe interlayer 240 can consist of or consist essentially of SiGe. It is contemplated that the thickness of the SiGe interlayer 240 can be less than the thickness of the second SiGe:B layer 206. It is also contemplated that the thickness of the SiGe interlayer 240 can be less than the thickness of the SiB layer 208.

[0064] The Si:B layer 208 covers the second SiGe:B layer 206, and may also cover the SiGe intermediate layer 240, and may be conformally deposited onto the second SiGe:B layer 206. In this regard, the Si:B layer 208 may be at least partially arranged (e.g., formed or deposited) above the trench 6, and the SiGe:B layer 208 that laterally separates (at least partially) the gate 212 from the gate includes a semiconductor device adjacent to the gate 212. In some examples, the Si:B layer 208 may have a thickness of about 1e. 20 Atom / cm 3 and about 1e 22 Atom / cm 3 For example, the boron concentration 230 of the Si:B layer can be between about 1e 20 Atom / cm 3 and about 5e 20 Atom / cm 3 Between, or about 5e 20 Atom / cm3 and about 1e 21 Atom / cm 3 between, or even around 1e 21 Atom / cm 3 and about 5e 21 Atom / cm 3 According to some examples, the Si:B layer 208 can have a Si:B layer thickness 232, such as a Si:B layer thickness 232 between about 25 angstroms and about 250 angstroms. In this regard, the Si:B layer thickness 232 can be between about 25 angstroms and about 100 angstroms, or between about 100 angstroms and about 175 angstroms, or even between about 175 angstroms and about 250 angstroms. It is contemplated that the Si:B layer 208 can be epitaxial (e.g., single crystalline), with the boron-doped silicon germanium material forming the second SiGe:B layer 206. It is also contemplated that the Si:B layer 208 can consist of or consist essentially of a boron-doped silicon material.

[0065] In some examples, the second SiGe:B layer thickness 228 can be greater than the first SiGe:B layer thickness 222. The first SiGe:B layer thickness 222 can be greater than the SiGe layer thickness 216, and the Si:B layer thickness 232 can be less than the second SiGe:B layer thickness 228. According to some examples, the second SiGe:B layer germanium concentration 224 can be greater than the first SiGe:B layer germanium concentration 218. The first SiGe:B layer germanium concentration 218 can be greater than the SiGe layer germanium concentration 214. It is also contemplated that according to some examples, the second SiGe:B layer boron concentration 226 can be greater than the first SiGe:B layer boron concentration 220, and the Si:B layer boron concentration 230 can be greater than the second SiGe:B layer boron concentration 226. In view of this disclosure, those skilled in the art will appreciate that the semiconductor structure 200 having these compositions can exert suitable compressive stress on the channel 210, so that a semiconductor device formed using the semiconductor structure 200 has favorable characteristics (e.g., channel resistivity and / or device speed).

[0066] As described above, in some deposition processes, layer components having a greater binding affinity at the deposited growth plane than other layer components may cause concentration variations within the semiconductor structure formed by the layer. In this regard, applicants have recognized that, without countermeasures, boron may accumulate at the first SiGe:B layer and the second SiGe:B layer interface 234 defined between the first SiGe:B layer 204 and the second SiGe:B layer 206. Without being bound by a particular theory or mode of operation, applicants believe that available boron atoms residing in the process environment will compete (and thereby preferentially bind) to semiconductor structures such as semiconductor structure 200 compared to available germanium and silicon atoms, potentially causing boron to accumulate at the first SiGe:B layer and the second SiGe:B layer interface 234 and change the electrical properties of semiconductor structure 200. To avoid such boron aggregation, and to ensure that the boron concentration at the interface 234 of the first SiGe:B layer and the second SiGe:B layer does not exceed the boron concentration of the second SiGe:B layer, the semiconductor structure 200 is formed by staggering increases in the flow rate of the boron-containing precursor 20 between a first boron-containing precursor mass flow rate used to deposit the first SiGe:B layer 204 and a second boron-containing precursor mass flow rate used to form the second SiGe:B layer 206, wherein the boron-containing precursor mass flow rate is staggered to an intermediate boron-containing precursor mass flow rate during the deposition of the first SiGe:B layer 204. The staggered increases throttle the amount of available boron atoms at the growth face of the semiconductor structure 200 during the formation of the first SiGe:B layer 204, ensuring that the available boron atoms do not exceed the increased (relatively) available germanium atoms provided to the growth face to begin deposition of the second SiGe:B layer 206. Advantageously, the staggered increases avoid the need to stop deposition of the first SiGe:B layer 204 before the second SiGe:B layer 206. Further advantageously, the staggered addition gradually changes the composition of the first SiGe:B layer 204, wherein the first SiGe:B layer 204 has a first portion 236 defining the SiGe layer 202 and a second portion 238 covering the first portion 236 and defining the second SiGe:B layer 206, thereby limiting the stress at the interface 234 between the first SiGe:B layer and the second SiGe:B layer.

[0067] refer to Figure 5-10 , shows a semiconductor structure 200 sequentially formed according to method 300 during a continuous process, for example, wherein in order to control the interface 234 ( Figure 4 As shown in Figure 2, boron accumulates at the position where the precursor flow does not stop. Figure 5 As shown, forming the semiconductor structure 200 begins by placing a substrate in a semiconductor processing system, such as the semiconductor processing system 100 (eg, Figure 1 In this regard, the gate valve 178 ( Figure 3 ) can be opened so that the substrate transfer robot 180 ( Figure 3 As shown in FIG. 1 , the end effector can be pushed into the substrate 2 and into the upper chamber 170 ( Figure 3 ), to a position above the substrate support 144. The lifting and rotation module 150 can then place the substrate 2 on the upper surface of the substrate support 144, for example using a plurality of lifting pins slidably received within the substrate support 144, and then remove the end effector from the upper chamber 170 and the chamber body 132. It is contemplated that the gate valve 178 is then closed, the pressure within the interior 166 is driven to a predetermined SiGe layer deposition pressure, the substrate is heated to a predetermined SiGe deposition temperature, and the substrate 2 is rotated about the rotation axis 176 (as shown). Figure 3 ). The driving pressure within the interior 166 of the chamber body 132 can be determined using the pressure included in the exhaust device 106 ( Figure 1 ) is achieved by, for example, combining the chamber device 104 ( Figure 1 Heating the substrate 2 to a predetermined SiGe layer deposition temperature can be accomplished radiatively, for example, using an upper heater element array 138 (such as Figure 3 ) and / or lower heater element array 140 (as shown Figure 3 The lifting and rotating module 150 (as shown) can be used. Figure 3 As shown) is used to realize the rotation of the substrate 2 around the rotation axis 176.

[0068] The SiGe layer 202 may be deposited by flowing a silicon-containing precursor 16 and a germanium-containing precursor 18 into the chamber assembly 104 ( Figure 3 It is contemplated that the injection flange 134 delivers the silicon-containing precursor 16 and the germanium-containing precursor 18 to the chamber body 132, and when the substrate 2 rotates around the rotation axis 176 ( Figure 3 ), the chamber body 132 causes the silicon-containing precursor 16 and the germanium-containing precursor 18 to flow over the upper surface 4 of the substrate 2, thereby exposing the substrate 2 to the silicon-containing precursor 16 and the germanium-containing precursor 18. In view of the present disclosure, those skilled in the art will understand that exposing the substrate 2 to the silicon-containing precursor 16 and the germanium-containing precursor 18 results in a SiGe layer 202 being deposited on the substrate 2 based on a predetermined SiGe layer deposition temperature, a predetermined SiGe layer deposition pressure, the mass flow rates of the silicon-containing precursor 16 and the germanium-containing precursor 18, and the duration of exposure of the substrate 2 to the silicon-containing precursor 16 and the germanium-containing precursor 18.

[0069] In some examples, the predetermined SiGe layer deposition pressure may be between about 0.1 Torr and about 760 Torr. In this regard, the SiGe layer deposition pressure may be between about 0.1 Torr and about 10 Torr, or between about 10 Torr and about 50 Torr, or even between about 50 Torr and about 760 Torr. According to some examples, the predetermined SiGe layer deposition temperature may be between about 400 degrees Celsius and about 1000 degrees Celsius. For example, the predetermined SiGe layer deposition temperature may be between about 400 degrees Celsius and about 600 degrees Celsius, or between about 600 degrees Celsius and about 800 degrees Celsius, or even between about 800 degrees Celsius and about 1000 degrees Celsius. It is contemplated that the SiGe layer deposition interval may be between about 5 seconds and about 30 seconds, for example, between about 5 seconds and about 15 seconds, or between about 15 seconds and about 25 seconds, or even between about 25 seconds and about 35 seconds. It is also contemplated that either (or both) the silicon-containing precursor 16 and the germanium-containing precursor 18 are mixed with the diluent / carrier gas 22 , and the etchant 24 may co-flow with the silicon-containing precursor 16 and the germanium-containing precursor 18 through the upper chamber 170 of the chamber body 132 .

[0070] like Figure 6 and 7 As shown, the deposition of the first SiGe:B layer 204 can be performed by flowing (e.g., simultaneously) a silicon-containing precursor 16, a germanium-containing precursor 18, and a boron-containing precursor 20 into the chamber device 104 ( Figure 3 In this regard, it is conceivable that the precursor supply device 102 ( Figure 2 176 ) flows the silicon-containing precursor 16 to the chamber device 104 at a first SiGe:B layer silicon-containing precursor mass flow rate, the precursor supply device 102 flows the germanium-containing precursor 18 to the chamber device 104 at a first SiGe:B layer germanium-containing precursor mass flow rate, and the precursor supply device 102 flows the boron-containing precursor 20 to the chamber device 104 at a first SiGe:B layer first boron-containing precursor mass flow rate. It can be envisioned that the injection flange 134 delivers the silicon-containing precursor 16, the germanium-containing precursor 18, and the boron-containing precursor 20 to the chamber body 132; and when the substrate 2 rotates about the rotation axis 176, the chamber body 132 in turn exposes the upper surface 4 of the substrate 2 to the silicon-containing precursor 16, the germanium-containing precursor 18, and the boron-containing precursor 20 (as shown in FIG. Figure 3). In view of the present disclosure, it will be understood by those skilled in the art that exposure of substrate 2 to silicon-containing precursor 16, germanium-containing precursor 18, and boron-containing precursor results in deposition of first SiGe layer 204 onto SiGe layer 202 according to a predetermined first SiGe:B layer deposition temperature; a predetermined first SiGe:B layer deposition pressure; a first SiGe:B layer silicon-containing precursor mass flow rate, a first SiGe:B layer germanium-containing precursor mass flow rate, and a first SiGe:B layer boron-containing precursor mass flow rate; and a predetermined first SiGe:B layer deposition interval duration, during which substrate 2 (and thus SiGe layer 202) is exposed to silicon-containing precursor 16, germanium-containing precursor 18, and boron-containing precursor 20.

[0071] In some examples, the predetermined first SiGe:B layer deposition pressure may be between about 0.1 Torr and about 760 Torr. In this regard, the predetermined first SiGe:B layer deposition pressure may be between about 0.1 Torr and about 10 Torr, or between about 10 Torr and about 50 Torr, or even between about 50 Torr and about 760 Torr. According to some examples, the predetermined first SiGe:B layer deposition temperature may be between about 400 degrees Celsius and about 1000 degrees Celsius. For example, the predetermined first SiGe:B layer deposition temperature may be between about 400 degrees Celsius and about 600 degrees Celsius, or between about 600 degrees Celsius and about 800 degrees Celsius, or even between about 800 degrees Celsius and about 1000 degrees Celsius. It is contemplated that the predetermined first SiGe:B layer deposition interval may be between about 50 seconds and about 450 seconds, such as between about 50 seconds and about 200 seconds, or between about 200 seconds and about 350 seconds, or even between about 350 seconds and about 500 seconds. It is also contemplated that during the deposition of the first SiGe:B layer 204, one or more of the silicon-containing precursor 16, the germanium-containing precursor 18, and the boron-containing precursor 20 may be flowed to the chamber device 104 ( Figure 1 It is also contemplated that during deposition of the first SiGe:B layer 204, the etchant 24 may co-flow with one or more of the silicon-containing precursor 16, the germanium-containing precursor 18, and the boron-containing precursor 20 through the chamber body 132 ( Figure 3 The upper chamber 170 (shown in Figure 3 ). It is also contemplated that the first SiGe:B layer 204 may be deposited continuously and without interruption, such as between the completion of deposition of the SiGe layer 202 and the start of deposition of the second SiGe:B layer 206.

[0072] like Figure 8 As shown, the deposition of the second SiGe:B layer 206 may be performed by flowing a silicon-containing precursor 16, a germanium-containing precursor 18, and a boron-containing precursor 20 into the chamber assembly 104 (eg, Figure 3 In this regard, it is conceivable that the precursor supply device 102 ( Figure 2176 ) flows the silicon-containing precursor 16, the germanium-containing precursor 18, and the boron-containing precursor 20 to the chamber device 104. The silicon-containing precursor 16 can flow to the chamber device 104 at a second SiGe:B layer silicon-containing precursor mass flow rate, the germanium-containing precursor 18 can flow to the chamber device 104 at a second SiGe:B layer germanium mass flow rate, and the boron-containing precursor 20 flows to the chamber device 104 at a second SiGe:B layer boron-containing precursor flow rate. It is contemplated that the injection flange 134 delivers the silicon-containing precursor 16, the germanium-containing precursor 18, and the boron-containing precursor 20 to the chamber body 132, and when the substrate 2 rotates about the rotation axis 176 (as shown in FIG. Figure 3 ), the chamber body 132 in turn exposes the upper surface 4 of the substrate 2 to the silicon-containing precursor 16, the germanium-containing precursor 18, and the boron-containing precursor 20. In view of the present disclosure, those skilled in the art will understand that according to a predetermined second SiGe:B layer deposition temperature; a predetermined second SiGe:B layer deposition pressure; a second SiGe:B layer silicon-containing precursor mass flow rate, a second SiGe:B layer germanium-containing precursor mass flow rate, and a second SiGe:B layer boron-containing precursor mass flow rate; and a predetermined second SiGe:B layer deposition interval duration, exposing the substrate 2 to the silicon-containing precursor 16, the germanium-containing precursor 18, and the boron-containing precursor results in the second SiGe:B layer 206 being deposited on the first SiGe:B layer 204.

[0073] In some examples, the predetermined second SiGe:B layer deposition pressure may be between about 0.1 Torr and about 760 Torr. In this regard, the second predetermined SiGe:B layer deposition pressure may be between about 0.1 Torr and about 10 Torr, or between about 10 Torr and about 50 Torr, or even between about 50 Torr and about 760 Torr. According to some examples, the predetermined second SiGe:B layer deposition temperature may be between about 400 degrees Celsius and about 1000 degrees Celsius. For example, the predetermined second SiGe:B layer deposition temperature may be between about 400 degrees Celsius and about 600 degrees Celsius, or between about 600 degrees Celsius and about 800 degrees Celsius, or even between about 800 degrees Celsius and about 1000 degrees Celsius. It is contemplated that the predetermined second SiGe:B layer deposition interval may be between about 100 seconds and about 400 seconds, such as between about 100 seconds and about 200 seconds, or between about 200 seconds and about 300 seconds, or even between about 300 seconds and about 400 seconds. It is also contemplated that during deposition of the second SiGe:B layer 206, one or more of the silicon-containing precursor 16, the germanium-containing precursor 18, and the boron-containing precursor 20 may be continuously flowing to the chamber device 104 ( Figure 1 It is also contemplated that during deposition of the second SiGe:B layer 206, the etchant 24 may co-flow with one or more of the silicon-containing precursor 16, the germanium-containing precursor 18, and the boron-containing precursor 20 through the chamber body 132 ( Figure 3 The upper chamber 170 (shown in Figure 3In some examples, the second SiGe:B layer 206 may be deposited continuously and without interruption, such as between the completion of the deposition of the first SiGe:B layer 204 and the start of the deposition of the Si:B layer 208 (or the definition of the interface 234 between the first SiGe:B layer and the second SiGe:B layer).

[0074] like Fig. 9 and 10 As shown, the deposition of Si:B layer 208 can be performed by flowing silicon-containing precursor 16 and boron-containing precursor 20 into chamber assembly 104 (e.g., Figure 3 In this regard, it is conceivable that the precursor supply device 102 ( Figure 2 As shown, the silicon-containing precursor 16 can flow to the chamber device 104 at a Si:B layer silicon-containing precursor mass flow rate, and the boron-containing precursor 20 can flow to the chamber device 104 at a Si:B layer boron-containing precursor mass flow rate. It is contemplated that the injection flange 134 delivers the silicon-containing precursor 16 and the boron-containing precursor 20 received from the precursor supply device 102 to the chamber body 132, and when the substrate 2 rotates about the rotation axis 176 (as shown in FIG. Figure 3 ), the chamber body 132 in turn exposes the second SiGe:B layer 206 to the silicon-containing precursor 16 and the boron-containing precursor 20. In view of the present disclosure, those skilled in the art will appreciate that, based on a predetermined Si:B layer deposition temperature; a predetermined Si:B layer deposition pressure; a Si:B layer silicon-containing precursor mass flow rate and a Si:B layer boron-containing precursor mass flow rate; and a duration of a Si:B layer deposition interval, exposing the second SiGe:B layer 206 to the silicon-containing precursor 16 and the boron-containing precursor 20 results in a Si:B layer 208 being deposited on the second SiGe:B layer 206.

[0075] In some examples, the predetermined Si:B layer deposition pressure may be between about 0.1 Torr and about 760 Torr. In this regard, the predetermined Si:B layer deposition pressure may be between about 0.1 Torr and about 10 Torr, or between about 10 Torr and about 50 Torr, or even between about 50 Torr and about 760 Torr. According to some examples, the predetermined Si:B layer deposition temperature may be between about 400 degrees Celsius and about 1000 degrees Celsius. For example, the predetermined Si:B layer deposition temperature may be between about 400 degrees Celsius and about 600 degrees Celsius, or between about 600 degrees Celsius and about 800 degrees Celsius, or even between about 800 degrees Celsius and about 1000 degrees Celsius. It is contemplated that the predetermined Si:B layer deposition interval may be between about 100 seconds and about 400 seconds, for example, between about 100 seconds and about 200 seconds, or between about 200 seconds and about 300 seconds, or even between about 300 seconds and about 400 seconds. It is also contemplated that during deposition of the Si:B layer 208, one or more of the silicon-containing precursor 16 and the boron-containing precursor 20 may flow into the chamber assembly 104 ( Figure 1It is also contemplated that during deposition of the Si:B layer 208, the etchant 24 may co-flow with one or more of the silicon-containing precursor 16 and the boron-containing precursor 20 through the chamber body 132 ( Figure 3 The upper chamber 170 (shown) Figure 3 shown).

[0076] refer to Fig.11 And continue to refer to Figure 6 and 7 It can be envisioned that the boron-containing precursor 20 flows into the chamber device 104 ( Figure 3 104 ) is deposited with a first portion 236 of the first SiGe:B layer 204. It is also contemplated that thereafter (and during the deposition of the first SiGe:B layer 204) the mass flow rate of the boron-containing precursor 20 is increased to the first SiGe:B boron layer intermediate boron-containing precursor flow rate, and the boron-containing precursor 20 flowing to the chamber apparatus 104 at the first SiGe:B layer intermediate boron-containing precursor flow rate is used to deposit a second portion 238 of the first SiGe:B layer 204. It is also contemplated that the mass flow rate of the boron-containing precursor 20 flowing to the chamber apparatus 104 is further increased to the first SiGe:B layer second boron-containing precursor mass flow rate, and the second SiGe:B layer 206 is deposited onto the first SiGe:B layer 204 using the boron-containing precursor 20 flowing to the chamber apparatus 104 at the first SiGe:B layer second boron-containing precursor mass flow rate. Advantageously, increasing the mass flow rate of the boron-containing precursor 20 into the middle of the first SiGe:B layer limits the boron concentration at the first SiGe:B layer and the second SiGe:B layer interface 234 defined between the first SiGe:B layer and the second SiGe:B layer to be less than the boron concentration within the second SiGe:B layer 206, thereby ensuring the reliability of semiconductor devices formed using the semiconductor structure 200.

[0077] like Fig.11As shown, the first portion 236 of the first SiGe:B layer 204 can be formed during the first SiGe:B layer first portion deposition interval A, and the second portion 238 of the first SiGe:B layer 204 can be formed during the first SiGe:B layer second portion deposition interval B. It is contemplated that the first SiGe:B layer second portion deposition interval can be shorter than the first SiGe:B layer first portion deposition interval. In this regard, the first SiGe:B layer second portion deposition interval can be between about 10% and about 40% of the first SiGe:B layer first portion deposition interval, for example, between about 10% and about 20% of the first SiGe:B layer first portion deposition interval, or between 20% and about 30%, or even between about 30% and about 40%. It is also contemplated that the second SiGe:B layer second portion deposition interval can be longer than the first SiGe:B layer first portion deposition interval. For example, the first SiGe:B layer second portion deposition interval can be between about 110% and about 140% of the first SiGe:B layer first portion deposition interval, for example, between about 110% and about 120% of the first SiGe:B layer first portion deposition interval, or between 120% and about 130%, or even between about 130% and about 140%. The first SiGe:B layer boron-containing precursor mass flow rate can be substantially constant during the first SiGe:B layer first portion deposition interval. The first SiGe:B layer boron-containing precursor mass flow rate can be substantially constant during the first SiGe:B layer second portion deposition interval. In a further example, the first SiGe:B layer boron-containing precursor mass flow rate can gradually increase during the first SiGe:B layer second portion deposition interval.

[0078] In some examples, the mass flow rate of the boron-containing precursor 20 may be increased only during the first SiGe:B layer second portion deposition interval B. In this regard, the mass flow rate of the first SiGe:B layer intermediate boron-containing precursor may be between about 110% and about 200% of the mass flow rate of the first boron-containing precursor of the first SiGe:B layer. According to some examples, the first SiGe:B layer and the second SiGe:B layer interface 234 (e.g., Figure 4During the deposition interval B of the second portion of the first SiGe:B layer, the mass flow rate of the boron-containing precursor 20 can be increased. For example, the mass flow rate of the boron-containing precursor 20 can be gradually increased from the mass flow rate of the boron-containing precursor in the middle of the first SiGe:B layer to the mass flow rate of the second boron-containing precursor in the first SiGe:B layer. In this regard, the second boron-containing precursor in the first SiGe:B layer can be between about 150% and about 250% of the mass flow rate of the boron-containing precursor in the middle of the first SiGe:B layer. Advantageously, this allows the mass flow rates of the silicon-containing precursor 16 and the germanium-containing precursor 18 to be tilted during the first SiGe:B second partial deposition interval B to compensate for the tilt of the mass flow rate of the boron-containing precursor 20 during the first SiGe:B second partial deposition interval B (limiting or eliminating the boron concentration at the interface 234 of the first SiGe:B layer and the second SiGe:B layer), while allowing the composition of the first SiGe:B layer 204 to remain substantially uniform throughout the thickness of the SiGe:B layer 204.

[0079] In some examples, during deposition of the second portion 238 of the first SiGe:B layer 204, e.g., during the first SiGe:B layer second portion deposition interval, the ratio of the germanium-containing precursor 18 to the silicon-containing precursor 16 can be increased. The ratio increase can be achieved by flowing the germanium-containing precursor 18 to the chamber device 104 at a first SiGe:B layer first germanium-containing precursor mass flow rate of 100 wt % during deposition of the first portion 236 of the first SiGe:B layer 204. Figure 1), during the deposition of the second portion 238 of the first SiGe:B layer 204, the mass flow rate of the germanium-containing precursor 18 is increased from the first SiGe:B layer first germanium-containing precursor mass flow rate to the first SiGe:B layer second germanium-containing precursor mass flow rate, and during the deposition of the second portion 238 of the second SiGe:B layer 206, the germanium-containing precursor 18 is flowed to the chamber arrangement 104 at the first SiGe:B layer second germanium-containing precursor mass flow rate. In this regard, the first SiGe:B layer second germanium-containing precursor mass flow rate can be between about 150% and about 400% of the first SiGe:B layer first germanium-containing precursor mass flow rate, such as between about 150% and about 250% of the first SiGe:B layer first germanium-containing precursor mass flow rate, or between about 250% and about 350%, or even between about 350% and about 400%. It is contemplated that during the deposition of the second SiGe:B layer 206, the first SiGe:B layer germanium-containing precursor mass flow rate can remain substantially constant. It is also contemplated that the mass flow rate of the germanium-containing precursor 18 may be maintained constant during the definition of the first SiGe:B layer and the second SiGe:B layer interface 234, for example by gradually increasing the mass flow rate of the germanium-containing precursor 18 at the end of the first SiGe:B layer second portion deposition interval. In view of the present disclosure, those skilled in the art will appreciate that the mass flow rates of the first SiGe:B layer and the second germanium-containing precursor within these ranges may ensure continuous growth of the first SiGe:B layer 204 and the second SiGe:B layer 206 (and / or during the definition of the first SiGe:B layer and the second SiGe:B layer interface 234) by throttling the available germanium atoms at the growth face of the semiconductor structure 200 (in an amount sufficient to offset the increase in the number of boron atoms at the growth face of the semiconductor structure 200).

[0080] According to some examples, the rate increase can be achieved by flowing the silicon-containing precursor 16 to the chamber arrangement 104 at a first SiGe:B layer first silicon-containing precursor mass flow rate during deposition of the first portion 236 of the first SiGe:B layer 204 ( Figure 1), during deposition of the second portion 238 of the first SiGe:B layer 204, the mass flow rate of the silicon-containing precursor 16 is increased from the first SiGe:B layer first silicon-containing precursor mass flow rate to the first SiGe:B layer second silicon-containing precursor mass flow rate, and thereafter during deposition of the second portion 238 of the second SiGe:B layer 206, the silicon-containing precursor 16 is flowed to the chamber arrangement 104 at the first SiGe:B layer second silicon-containing precursor mass flow rate. In this regard, the first SiGe:B layer second silicon-containing precursor mass flow rate may be between about 105% and about 125% of the first SiGe:B layer first silicon-containing precursor mass flow rate, such as between about 105% and about 110% of the first SiGe:B layer first silicon-containing precursor mass flow rate, or between about 110% and about 120%, or even between about 120% and about 125%. It is contemplated that the mass flow rate of the first SiGe:B layer second silicon-containing precursor may be maintained substantially constant during deposition of the second SiGe:B layer 206. It is also contemplated that the mass flow rate of the silicon-containing precursor 16 may be maintained substantially constant during definition of the first SiGe:B layer and the second SiGe:B layer interface 234, for example by gradually increasing the mass flow rate of the silicon-containing precursor 16 at the end of the first SiGe:B layer second portion deposition interval. In view of this disclosure, one skilled in the art will also appreciate that the mass flow rate of the first SiGe:B layer second silicon-containing precursor within these ranges may also ensure continuous growth of the first SiGe:B layer 204 and the second SiGe:B layer 206 (and / or during definition of the first SiGe:B layer and the second SiGe:B layer interface 234) by throttling the available silicon atoms at the growth face of the semiconductor structure 200 (in an amount sufficient to offset the increase in the number of boron atoms at the growth face of the semiconductor structure 200).

[0081] In some examples, during deposition of the first portion 236 of the first SiGe:B layer 204, the etchant 24 may flow to the chamber arrangement 104 at a first SiGe:B layer first etchant mass flow rate ( Figure 1). During deposition of the second portion 238 of the first SiGe:B layer 204, the mass flow rate of the etchant 24 can be increased to the first SiGe:B layer second etchant mass flow rate, and during deposition of the second SiGe:B layer 206, the etchant 24 flows to the chamber arrangement 104 at the first SiGe:B layer second etchant mass flow rate. In this regard, the first SiGe:B layer second etchant mass flow rate can be between about 150% and about 600% of the first SiGe:B layer first etchant mass flow rate, such as between about 150% and about 300% of the first SiGe:B layer first etchant mass flow rate, or between about 300% and about 450%, or even between about 450% and about 600%. In view of the present disclosure, those skilled in the art will appreciate that during deposition of the second portion 238 of the first SiGe:B layer 204 and / or deposition of the second SiGe:B layer 206, during the aforementioned increase in the ratio of the germanium-containing precursor 18 provided to the chamber apparatus 104, during the first SiGe:B layer second portion deposition interval, and / or during deposition of the second SiGe:B layer, the first SiGe:B layer second etchant mass flow rate can continue to select for deposition.

[0082] In some examples, before depositing the Si:B layer 208, a SiGe intermediate layer 240 (eg, Figure 4 ) is deposited onto the second SiGe:B layer 206. In this regard, it is contemplated that the flow of the boron-containing precursor 20 to the chamber assembly 104 ( Figure 1 ). The flow of the germanium-containing precursor 18 to the chamber arrangement 104 can be reduced as (e.g., simultaneously) the flow of the boron-containing precursor 20 to the chamber arrangement 104 is reduced (or completely stopped). The flow of the silicon-containing precursor 16 and the germanium-containing precursor 18 without the flow of the boron-containing precursor 20 can continue for a relatively short deposition interval, e.g., a shorter deposition interval than the second SiGe:B layer 206 and the Si:B layer 208, such that the thickness of the SiGe intermediate layer 240 is less than the thickness of the second SiGe:B layer 206 or even thinner than the Si:B layer 208. The deposition of Si:B can then be started by resuming the flow of the boron-containing precursor 20 to the chamber body 132, e.g., at a flow rate greater than that which flowed during the deposition of the second SiGe:B layer 206. Advantageously, the deposition of the intermediate SiGe layer 240 can promote the nucleation of the constituent precursors of the Si:B layer 208 on the semiconductor structure 200, for example by limiting (or eliminating) the relatively high germanium concentration (e.g., between 30% and approximately 60%) in the second SiGe:B layer 206, which would otherwise affect the nucleation of the constituent precursors of the Si:B layer 208 subsequently deposited on the semiconductor structure 200.

[0083] In some examples, during deposition of SiGe interlayer 240, etchant 24 may flow into chamber assembly 104 ( Figure 1 ). In this regard, the flow of the etchant 24 can be reduced as (e.g., simultaneously) the flow of the germanium-containing precursor 18 to the chamber arrangement 104 is reduced, and as (e.g., simultaneously) the flow of the boron-containing precursor 20 to the chamber arrangement 104 is stopped, e.g., to exclude substantially all of the boron from the SiGe intermediate layer 240. Advantageously, this can prevent boron from segregating at the interface of the second SiGe:B layer 206 and the Si:B layer 208, thereby preventing any effect of boron segregation at the interface of the second SiGe:B layer 206 and the Si:B layer 210 on the structure of the Si:B layer 201. Further advantageously, during the deposition of the second SiGe:B layer 206 and the Si:B layer 208, the flow of the etchant 24 can be less than the flow of the etchant 24 provided to the chamber arrangement 104, limiting the tendency of the etchant 24 to etch back the second SiGe:B layer 206, while maintaining the aforementioned beneficial avoidance of boron segregation at the interface of the second SiGe:B layer 206 and the Si:B layer 208.

[0084] refer to Figure 12-16 , showing the formation of a semiconductor structure such as semiconductor structure 200 ( Figure 1 As shown in FIG. Fig.12 As shown, method 300 includes placing a substrate on a substrate support disposed in a chamber arrangement of a semiconductor processing system, such as semiconductor processing system 100 ( Figure 1 The substrate 2 (shown) Figure 1 ), as shown in block 302. A SiGe layer is deposited on the substrate, for example, SiGe layer 202 (as shown in FIG. Figure 4 As shown), as shown in box 304; a first SiGe: B layer is deposited on the SiGe layer, for example, the first SiGe: B layer 204 (as shown Figure 4 and a second SiGe: B layer is deposited onto the first SiGe: B layer, for example, the second SiGe: B layer 206 (as shown in block 306); Figure 4 As shown in block 308. It is contemplated that a Si:B layer is deposited onto the second SiGe:B layer, for example Si:B layer 208 ( Figure 4 ), and a semiconductor device such as semiconductor device 200 ( Figure 1 The semiconductor structure is formed by a semiconductor conductor structure including a SiGe layer, a first SiGe:B layer, a second SiGe:B layer, and a Si:B layer, as shown in blocks 310 and 312. The semiconductor device formed using the semiconductor structure may be a finFET semiconductor device, a GAA semiconductor device, and / or a 3D DRAM semiconductor device formed by a semiconductor device, as shown in blocks 314-318. In some examples, the SiGe intermediate layer, such as the SiGe intermediate layer 240 ( Figure 4 ) may be deposited onto the second SiGe:B layer, and the Si:B layer may be deposited onto the SiGe intermediate layer, as shown in block 390 , and further as shown in block 310 .

[0085] like Fig.13 As shown, depositing 304 the SiGe layer may include flowing a silicon-containing precursor at a SiGe layer silicon-containing precursor mass flow rate and a germanium-containing precursor at a SiGe layer germanium-containing precursor mass flow rate to the chamber device, such as the silicon-containing precursor 16 (eg, Figure 2 ) and a germanium-containing precursor 18 (as Figure 2 ), as shown in blocks 320 and 322. Depositing 308 the second SiGe:B layer may include flowing a silicon-containing precursor at a second SiGe:B layer silicon-containing precursor mass flow rate, and flowing a germanium-containing precursor at a second SiGe:B layer germanium-containing precursor mass flow rate, as shown in blocks 324 and 326. Depositing the second SiGe:B layer 308 may also include flowing a boron-containing precursor, such as a boron-containing precursor 20 ( Figure 2 ) flows to the chamber device, as shown in block 328. Deposition 310 may include flowing a silicon-containing precursor and a boron-containing precursor to the chamber device at a Si:B layer silicon-containing mass flow rate and a Si:B layer boron-containing precursor mass flow rate, respectively, as shown in blocks 330 and 332.

[0086] like Fig.14 As shown, depositing 306 the first SiGe:B layer may include flowing a silicon-containing precursor to the chamber apparatus at a predetermined first SiGe:B layer silicon-containing precursor mass flow rate, as shown in block 334. Depositing 306 the first SiGe:B layer may include flowing a germanium-containing precursor to the chamber apparatus at a first SiGe:B layer first germanium-containing mass flow rate, as shown in block 336. It is contemplated that depositing 306 the first SiGe:B layer includes flowing a boron-containing precursor to the chamber apparatus. In this regard, it is contemplated that the boron-containing precursor initially flows to the chamber apparatus at a predetermined first SiGe:B layer first boron-containing precursor mass flow rate, as shown in block 338. It is also contemplated that thereafter the mass flow rate of the boron-containing precursor is increased to a first SiGe:B layer intermediate boron-containing precursor mass flow rate, as shown in block 340, and that upon completion of deposition of the first SiGe:B layer, the mass flow rate of the boron-containing precursor is increased from the first SiGe:B layer intermediate boron-containing precursor mass flow rate to a first SiGe:B layer second boron-containing precursor mass flow rate, as shown in block 342. Advantageously, the mass flow rate of the boron-containing precursor increases gradually from the first boron-containing precursor mass flow rate of the first SiGe:B layer to the boron-containing precursor mass flow rate in the middle of the first SiGe:B layer, and the increase in the mass flow rate of the boron-containing precursor to the second boron-containing precursor mass flow rate of the first SiGe:B layer can limit the boron concentration at the interface of the first SiGe:B layer and the second SiGe:B layer, for example, at the interface 234 between the first SiGe:B layer and the second SiGe:B layer ( Figure 4 ), as shown in block 344. In some examples of the present disclosure, the boron concentration at the interface can be less than the boron concentration within the second SiGe:B layer, such as during an operation in which the second SiGe:B layer is deposited immediately after the first SiGe:B layer is deposited and without interruption, limiting the time required to form the semiconductor structure.

[0087] Continue to refer Fig.12 It is contemplated that by depositing a first portion of a first SiGe layer, such as first portion 236 ( Figure 4 ), and then depositing a second portion of the first SiGe:B layer onto the first portion of the first SiGe:B layer, such as the second portion 238 ( Figure 4 ), to complete the deposition of the first SiGe:B layer, as shown in blocks 346 and 348. Referring again to Fig.13 , a first portion of the first SiGe:B layer may be deposited using a boron-containing precursor flowing to the chamber device at a first SiGe:B layer first boron-containing precursor mass flow rate, as shown in block 350; and a second portion of the first SiGe:B layer may be deposited using a boron-containing precursor flowing to the chamber device, while increasing the mass flow rate of the boron-containing precursor from the first SiGe:B layer first boron-containing precursor mass flow rate to the first SiGe:B layer intermediate boron-containing precursor mass flow rate, as shown in block 352. It is contemplated that the first portion of the first SiGe:B layer is deposited during the first portion deposition interval, and the second portion of the first SiGe:B layer is deposited during the second portion deposition interval, as shown in blocks 354 and 356. In some examples, the second portion deposition interval may be shorter than the first portion deposition interval. For example, the second portion deposition interval may be between about 10% and about 40% of the first portion deposition interval, also as shown in blocks 354 and 356. According to some examples, the second portion deposition interval may be longer than the first portion deposition interval. It is also contemplated that the second partial deposition interval may be substantially equal in duration to the first partial deposition interval and still be within the scope of the present disclosure.

[0088] like Fig.15As shown, depositing 352 the second portion of the first SiGe:B layer may include increasing the ratio of the mass flow rate of the germanium-containing precursor to the mass flow rate of the silicon-containing precursor, as shown in block 358. In certain examples of the present disclosure, the ratio increase may be achieved by flowing the germanium-containing precursor to the chamber device at the first SiGe:B layer first germanium-containing precursor mass flow rate during deposition of the first portion of the first SiGe:B layer, as shown in block 360, and thereafter increasing the mass flow rate of the germanium-containing precursor to the first SiGe:B layer second germanium-containing precursor mass flow rate at the beginning of (or gradually during) deposition of the second portion of the first SiGe:B layer, as shown in block 362. It is contemplated that the first portion of the first SiGe:B layer is deposited using the germanium-containing precursor flowing to the chamber device at the first SiGe:B layer first germanium-containing precursor mass flow rate, as shown in block 364. It is also contemplated that the second portion of the first SiGe:B layer is deposited using the germanium-containing precursor flowing to the chamber device at (or during gradually increasing thereof) the first SiGe:B layer second germanium-containing precursor mass flow rate, as shown in block 366. In certain examples of the present disclosure, the second germanium-containing precursor mass flow rate can be between about 150% and about 400% of the first germanium-containing precursor mass flow rate, which can limit (or entirely prevent) changes in boron concentration within the second portion of the first SiGe:B layer that would otherwise be associated with an increase in the boron-containing precursor mass flow rate from a first boron-containing precursor mass flow rate in the first SiGe:B layer to a boron-containing precursor mass flow rate in the middle of the first SiGe:B layer.

[0089] According to certain examples of the present disclosure, during deposition of the second portion of the SiGe:B layer, the increase 358 of the germanium-containing precursor relative to the silicon-containing precursor can be accompanied by an increase in the mass flow rate of the silicon-containing precursor to the chamber apparatus. In this regard, deposition of the first portion of the first SiGe:B layer can be accomplished while flowing the silicon-containing precursor at the first silicon-containing precursor mass flow rate, as shown in blocks 368 and 370, the mass flow rate of the silicon-containing precursor can thereafter be increased (e.g., according to a step function) to the first SiGe:B layer second silicon-containing precursor mass flow rate, and the second portion of the first SiGe:B layer is deposited using the silicon-containing precursor flowing to the chamber apparatus at the first SiGe:B layer second silicon-containing precursor mass flow rate, as shown in blocks 372 and 374. Advantageously, at the start of deposition of the second portion of the first SiGe:B layer, increasing the mass flow rate of either (or both) the germanium-containing precursor and the silicon-containing precursor can fill the upper chamber 170 (e.g., at the start of deposition of the second portion of the first SiGe:B layer) with a reserve of silicon and germanium atoms available for incorporation into the second portion of the SiGe:B layer. Figure 3 ), offsetting the effect of the tilted increase in available boron atoms (and their associated greater binding affinity) on the composition of the second portion of the first SiGe:B layer during the increase from the first boron-containing precursor of the first SiGe:B layer to the intermediate boron-containing precursor of the second SiGe:B layer.

[0090] like Fig.16As shown, it is contemplated that method 300 includes applying an etchant, such as etchant 24 (eg, Figure 2 In this regard, the etchant may be flowed to the chamber device during the deposition of the SiGe layer, for example, by co-flowing the etchant with either (or both) the silicon-containing precursor and the germanium-containing precursor, as shown in block 376. During the deposition of the first SiGe:B layer, the etchant may also be flowed to the chamber device, for example, by continuous co-flowing the etchant with either (or both) the silicon-containing precursor and the germanium-containing precursor and / or the boron-containing precursor, as shown in block 378. During the deposition of the second SiGe:B layer, the etchant may further be flowed to the chamber device, also by continuous co-flowing the etchant with either (or both) the silicon-containing precursor and the germanium-containing precursor and / or the boron-containing precursor, as shown in block 380. It is contemplated that during the deposition of the Si:B layer, the etchant may additionally be flowed to the chamber device, for example, by co-flowing the etchant with either (or both) the silicon-containing precursor and / or the boron-containing precursor, as shown in block 382. In view of the present disclosure, those skilled in the art will appreciate that flowing an etchant to a chamber arrangement during formation of a semiconductor structure may provide selectivity in the deposition of the above-mentioned layers, for example by removing portions of the dielectric surface deposited to the substrate, such as the trench 210 (e.g., Figure 4 ) and gate 212 (as shown Figure 4 amorphous material on the substrate) while allowing the above layers to be deposited onto the substrate.

[0091] In certain examples of the present disclosure, the mass flow rate of the etchant provided to the chamber device can be changed during the formation of the semiconductor structure. For example, during the first partial deposition of the first SiGe:B layer, the etchant can flow to the chamber device at a first SiGe:B layer first etchant mass flow rate, as shown in block 384, and during the second partial deposition of the second SiGe:B layer, the mass flow rate of the etchant is increased to a first SiGe:B layer second etchant mass flow rate, as shown in block 386. During the deposition of the second SiGe:B layer, the mass flow rate of the etchant to the chamber device can remain constant, such as during the deposition of the second SiGe:B layer, the mass flow rate remains at the first SiGe:B layer second etchant mass flow rate, as shown in block 388. For example, the flow rate of the etchant can be increased from the first SiGe:B layer first etchant mass flow rate to the first SiGe:B layer second etchant mass flow rate, which is between about 150% and about 600% of the first SiGe:B layer first etchant mass flow rate. Advantageously, increasing the mass flow rate of the etchant within these ranges can compensate for changes in the amorphous material composition that accompany changes in the above-described mass flow rates of one or more of the silicon-containing precursor, the germanium-containing precursor, and the boron-containing precursor, such that deposition on a substrate having exposed silicon surfaces and dielectric surfaces (e.g., on a patterned substrate) remains selective despite adjusting the mass flow rate as described above to limit an increase in boron concentration at the interface of the first SiGe:B layer and the second SiGe:B layer.

[0092] Although the present disclosure has been provided in the context of certain embodiments and examples, it will be understood by those skilled in the art that the present disclosure extends to other alternative embodiments and / or uses of embodiments beyond the specifically described embodiments and obvious modifications and equivalents thereof. In addition, although various variations of the embodiments of the present disclosure have been shown and described in detail, other modifications within the scope of the present disclosure will be apparent to those skilled in the art based on the present disclosure. It is also conceivable that various combinations or sub-combinations may be made to the specific features and aspects of the embodiments and still fall within the scope of the present disclosure. It should be understood that the various features and aspects of the disclosed embodiments may be combined or replaced with one another to form different modes of embodiments of the present disclosure. Therefore, the scope of the present disclosure should not be limited by the specific embodiments described above.

[0093] The headings provided herein, if any, are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed herein.

Claims

1. A method for manufacturing a semiconductor structure, comprising: placing a substrate on a substrate support disposed within a chamber arrangement of a semiconductor processing system; flowing a boron-containing precursor to the chamber device at a first boron-containing precursor mass flow rate; depositing a first portion of a first SiGe:B layer using a boron-containing precursor; increasing the mass flow rate of the boron-containing precursor to an intermediate boron-containing precursor flow rate; depositing a second portion of the first SiGe:B layer using a boron-containing precursor; further increasing the mass flow rate of the boron-containing precursor to the chamber assembly to a second boron-containing precursor mass flow rate; as well as depositing a second SiGe:B layer onto the first SiGe:B layer using a boron-containing precursor; Thus, the increase in the mass flow of the boron-containing precursor to the intermediate mass flow of the boron-containing precursor limits the boron concentration at the first SiGe:B layer and the second SiGe:B layer interface defined between the first SiGe:B layer and the second SiGe:B layer to be less than the boron concentration in the second SiGe:B layer.

2. The method according to claim 1, wherein: A first portion of the first SiGe:B layer is formed during a first partial deposition interval, wherein a second portion of the first SiGe:B layer is formed during a second partial deposition interval, and wherein the second partial deposition interval is shorter than the first partial deposition interval.

3. The method according to claim 2, wherein: The second partial deposition interval is between about 10% and about 40% of the first partial deposition interval.

4. The method according to claim 2, wherein: The mass flow rate of the boron-containing precursor is substantially constant during the first portion of the deposition interval.

5. The method according to claim 2, wherein: The mass flow rate of the boron-containing precursor is gradually increased during the second portion of the deposition interval.

6. The method according to claim 1, further comprising: flowing a silicon-containing precursor to a chamber arrangement during deposition of a first portion of the first SiGe:B layer; flowing a germanium-containing precursor to a chamber device during deposition of a first portion of the first SiGe:B layer; as well as During deposition of the second portion of the first SiGe:B layer, a ratio of a germanium-containing precursor mass flow rate to a silicon-containing precursor mass flow rate is increased.

7. The method according to claim 6, wherein: During deposition of the second portion of the SiGe:B layer, increasing the ratio of the germanium-containing precursor to the silicon-containing precursor flowing to the chamber apparatus comprises: flowing a germanium-containing precursor to a chamber device at a first germanium-containing precursor mass flow rate during deposition of a first portion of the first SiGe:B layer; During deposition of a second portion of the first SiGe:B layer, increasing a first germanium-containing precursor mass flow rate to a second germanium-containing precursor mass flow rate; and During deposition of the second SiGe:B layer, a germanium-containing precursor is flowed to the chamber apparatus at a second germanium-containing precursor mass flow rate.

8. The method according to claim 7, wherein: The second germanium-containing precursor mass flow rate is between 150% and 400% of the first germanium-containing precursor mass flow rate.

9. The method according to claim 7, wherein: During deposition of the second SiGe:B layer, the second germanium-containing precursor mass flow rate is maintained substantially constant.

10. The method according to claim 7, wherein: During the definition of the interface between the first SiGe:B layer and the second SiGe:B layer, the mass flow rate of the germanium-containing precursor is kept constant.

11. The method according to claim 6, wherein: During deposition of the second portion of the SiGe:B layer, increasing the ratio of the germanium-containing precursor to the silicon-containing precursor flowing to the chamber apparatus comprises: flowing a silicon-containing precursor to a chamber device at a first silicon-containing precursor mass flow rate during deposition of a first portion of the first SiGe:B layer; During deposition of a second portion of the first SiGe:B layer, increasing a first silicon-containing precursor mass flow rate to a second silicon-containing precursor mass flow rate; and During deposition of the second SiGe:B layer, a silicon-containing precursor is flowed to the chamber apparatus at a second silicon-containing precursor mass flow rate.

12. The method according to claim 11, wherein: The second silicon-containing precursor mass flow rate is between about 105% and about 125% of the first silicon-containing precursor mass flow rate.

13. The method according to claim 11, wherein: During definition of a first SiGe:B layer and a second SiGe:B layer interface between the first SiGe:B layer and the second SiGe:B layer, a mass flow rate of a first silicon-containing precursor flowing to the chamber apparatus is maintained constant.

14. The method according to claim 1, further comprising: flowing an etchant to the chamber device at a first etchant mass flow rate during deposition of a first portion of the first SiGe:B layer; During deposition of a second portion of the first SiGe:B layer, increasing the flow rate of the etchant to a second etchant mass flow rate; as well as During deposition of the second SiGe:B layer, an etchant is flowed to the chamber apparatus at a second etchant mass flow rate.

15. The method according to claim 14, wherein: The second etchant mass flow rate is between about 150% and about 600% of the first etchant mass flow rate.

16. The method according to claim 1, wherein: The first SiGe:B layer and the second SiGe:B layer are deposited continuously and without interruption.

17. The method according to claim 1, wherein: The substrate includes a trench defined in an upper surface of the substrate, and the method further includes depositing a silicon germanium (SiGe) layer onto a lower surface and sidewalls defining the trench.

18. The method according to claim 17, wherein: The first SiGe:B layer is deposited within the trench and onto the SiGe layer, wherein the second SiGe:B layer protrudes above an upper surface of the substrate, and wherein the method further comprises depositing a boron-doped silicon layer onto the second SiGe:B layer.

19. The method of claim 1, further comprising: Depositing a SiGe intermediate layer onto the second SiGe:B layer; as well as A Si:B layer is deposited onto the SiGe interlayer.

20. A semiconductor structure formed using the method of claim 1, wherein the second SiGe:B layer has a greater thickness than the first SiGe:B layer, wherein the second SiGe:B layer has a greater germanium concentration than the first SiGe:B layer, and wherein the second SiGe:B layer has a greater boron concentration than the first SiGe:B layer.

21. The semiconductor structure of claim 19, further comprising: a SiGe intermediate layer deposited onto the second SiGe:B layer; as well as A Si:B layer is deposited onto the SiGe interlayer.

22. A computer program product comprising a non-transitory machine-readable medium having instructions which, when read by a processor, cause the processor to: placing a substrate on a substrate support disposed within a chamber arrangement of a semiconductor processing system; flowing a boron-containing precursor to the chamber device at a first boron-containing precursor mass flow rate; depositing a first portion of a first SiGe:B layer using a boron-containing precursor; increasing the mass flow rate of the boron-containing precursor to an intermediate boron-containing precursor flow rate; depositing a second portion of the first SiGe:B layer using a boron-containing precursor; further increasing the mass flow rate of the boron-containing precursor to the chamber assembly to a second boron-containing precursor mass flow rate; as well as A second SiGe:B layer is deposited onto the first SiGe:B layer using a boron-containing precursor, whereby an increase in the mass flow rate of the boron-containing precursor to the intermediate mass flow rate of the boron-containing precursor limits the boron concentration at the interface between the first SiGe:B layer and the second SiGe:B layer defined between the first SiGe:B layer and the second SiGe:B layer to be less than the boron concentration within the second SiGe:B layer.

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