Ion grinding device

Abstract

The invention provides an ion polishing apparatus capable of improving reproducibility of ion distribution. An ion polishing device is provided with: an ion source (1); a sample stage (2) on which a sample (4) to be processed by irradiation with a non-focused ion beam from the ion source (1) is placed; and a drive means (8) that is disposed between the ion source (1) and the sample stage (2), moves a linear ion beam measurement member (7) extending in the first direction in a second direction orthogonal to the first direction, and irradiates the sample stage (2) with the ion beam in a state where the ion beam is output from the ion source (1) under the first irradiation condition. An ion beam measuring member (7) is moved by a driving means (8) within an irradiation range of an ion beam, and an ion beam current flowing through the ion beam measuring member (7) is measured by irradiating the ion beam to the ion beam measuring member (7).

Description

[0001] This application is a divisional application of the patent application filed on February 20, 2021, with application number 201880096759.0 and invention name “Ion Milling Device”. Technical Field

[0002] The present invention relates to an ion milling apparatus. Background Art

[0003] Patent document 1 discloses an ion milling device, which generates plasma in an ion source and extracts ions, irradiates the extracted ions, and processes a substrate or the like. The ion milling device discloses, for example, processing a 4-inch (Φ100) substrate, and in order to obtain a uniform or desired large-aperture ion beam, controls the distribution of the extracted ion beam by electrically controlling the plasma distribution in the ion source. As an example of a control method, it is disclosed that the distribution state of the ion beam is measured using a Faraday cup, and the voltage applied to the plasma control electrode is adjusted according to the measurement result.

[0004] Prior Art Literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2002-216653 Summary of the invention

[0007] Problems to be solved by the invention

[0008] An ion milling device is a device used to irradiate a sample (such as metal, semiconductor, glass, ceramic, etc.) with an unfocused ion beam, and to cause atoms on the sample surface to fly off without stress through the sputtering phenomenon, thereby grinding the surface or cross-section. Among the ion milling devices, there is a device that serves as a pretreatment device for observing the surface or cross-section of a sample based on a scanning electron microscope (SEM: Scanning Electron Microscope) or a transmission electron microscope (TEM: Transmission Electron Microscope). For the ion generating source for such a pretreatment device, the effective Penning method is often used to miniaturize the structure.

[0009] The ion beam from the Penning type ion source irradiates the sample in a non-convergent state, so the ion distribution near the ion beam irradiation point of the sample has the characteristic that the ion density is the highest in the center and the ion density decreases from the center to the outside. On the other hand, in order to accurately observe the structure and composition, especially in surface observation using an electron microscope, the sample surface needs to be smoothly ground. Therefore, the ion beam is irradiated at a low incident angle while the sample is rotated. As a result, a wide and smooth processing surface can be obtained for the peripheral range including the part to be observed. Since the ion density is directly linked to the processing speed (grinding rate) of the sample, the characteristics of the ion distribution have a great influence on the processing shape of the sample processing surface.

[0010] Regarding the Penning type ion source, it is known that the ions generated and ejected from its structure cause wear of the internal structural parts. In addition, as a result of processing the sample, the tiny particles generated and floating from the processed surface adhere to the ion generating source, especially the ion ejection port, and become the cause of contamination. Due to these factors, if the ion milling device is continued to be used, the characteristics of the ion beam will change, and there is a situation where the reproducibility of the processed shape of the sample processing surface is reduced. In the case of electron microscope observation for the purpose of mass production process management, it is required to perform the same processing on multiple samples, so the reduction in the reproducibility of the processed shape of the ion milling device may lead to a reduction in the accuracy of defect detection.

[0011] In view of such problems, the present invention provides an ion beam adjustment method of an ion milling device suitable for performing a pre-processing process for observing the surface or cross-section of a sample, and an ion milling device capable of adjusting ion beam irradiation conditions.

[0012] Means for solving problems

[0013] An ion milling device according to one embodiment of the present invention comprises: an ion source; a sample stage on which a sample to be processed by irradiating an unfocused ion beam from the ion source is placed; a driving unit which is arranged between the ion source and the sample stage and which moves a linear ion beam measuring component extending in a first direction in a second direction orthogonal to the first direction; and a control unit which, in a state where an ion beam is output from the ion source under a first irradiation condition, moves the ion beam measuring component within an irradiation range of the ion beam via the driving unit and measures the ion beam current flowing through the ion beam measuring component by irradiating the ion beam onto the ion beam measuring component.

[0014] In addition, as another embodiment of the present invention, an ion grinding device includes: a sample chamber; an ion source position adjustment mechanism, which is arranged in the sample chamber; an ion source, which is installed in the sample chamber via the ion source position adjustment mechanism; a sample stage, which carries a sample to be processed by irradiating an unfocused ion beam from the ion source; and a control unit, which calculates an adjustment value of a first irradiation condition based on an ion distribution when an ion beam is irradiated from the ion source to the sample under the first irradiation condition, wherein the ion source is a Penning-type ion source, and the parameters for calculating the adjustment value of the first adjustment condition include at least one of a discharge voltage of the ion source, a gas flow rate of the ion source, and a distance between the ion source and the sample.

[0015] Effects of the Invention

[0016] The reproducibility of ion distribution in an ion milling device can be improved.

[0017] Other issues and novel features will become clear from the description of this specification and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a structural example of an ion milling device (schematic diagram).

[0019] Figure 2 It is a diagram showing the structure of a Penning type ion source.

[0020] Figure 3 This is a structural example of a drive unit.

[0021] Figure 4 It is a schematic diagram (top view) showing the state of measuring the ion beam current.

[0022] Figure 5A This is the result of measuring the ion beam current using the ion beam measuring unit.

[0023] Figure 5B It is a diagram showing the adjustable range of the ion beam.

[0024] Figure 6 This is a block diagram related to ion distribution adjustment of an ion beam.

[0025] Figure 7 This is a flowchart for obtaining ion beam current distribution and adjusting ion beam irradiation conditions.

[0026] Figure 8 is a schematic diagram of the ion beam current distribution. DETAILED DESCRIPTION

[0027] Hereinafter, embodiments of the present invention will be described based on the drawings.

[0028] Figure 1This is a diagram (schematic diagram) showing the main parts of the ion milling device of an embodiment of the present invention from above (with the vertical direction being the Y direction). An ion source 1 is set in a sample chamber 6 capable of maintaining a vacuum state, a sample stage 2 is set with a sample 4 as a processing object, a sample stage rotation drive source 3 rotates the sample stage 2 in the R direction with the rotation center R0 as the axis, an ion beam measurement component 7 is arranged close to the sample mounting surface of the sample stage 2, a drive unit 8 reciprocates the ion beam measurement component 7 in the X direction, and a sample protection baffle 9 is set between the ion beam measurement component 7 and the sample mounting surface of the sample stage 2.

[0029] The ion beam from the ion source 1 irradiates the sample 4 placed on the sample mounting surface of the sample stage 2 while diffusing radially with the ion beam center B0 as the center. When processing the sample 4, it is necessary to adjust it so that the rotation center R0 and the ion beam center B0 are consistent. In order to facilitate such adjustment, the ion source 1 is installed on the sample chamber 6 via an ion source position adjustment mechanism 5 that adjusts the position along the X direction, the Y direction, and the Z direction. Thus, the position of the ion beam center R0 of the ion source 1, specifically the position on the XY plane (including the plane in the X direction and the Y direction) and the action distance (the position in the Z direction, specifically refers to the distance from the ion beam emission position of the ion source 1 to the sample stage 2) can be adjusted.

[0030] The sample stage 2 has a rotation center R0 extending in the Z direction, a pitch axis T0 extending in the X direction and intersecting with the rotation center R0 on the sample mounting surface of the sample stage 2, and the sample stage 2 can be tilted around the pitch axis T0. The figure shows a state in which the sample mounting surface of the sample stage 2 and the ion source 1 are directly opposite, in which the ion beam measurement component 7 and the drive unit 8 are arranged just in front of the sample mounting surface of the sample stage 2 from the perspective of the ion source. The ion beam measurement component 7 and the drive unit 8 can be arranged between the ion source 1 and the sample stage 2, but it is desirable to arrange them as close to the sample 4 as possible so as to more accurately infer the state of the ion beam acting on the sample 4.

[0031] The ion beam measuring component 7 will be described in detail later. It is a conductive component that outputs the ion beam current flowing by irradiating the ion beam from the ion source 1 to the ion beam measuring component 7 through the ion beam current detection wiring 37 to the control unit outside the sample chamber 6, and detects the ion distribution emitted from the ion source 1 as the current amount.

[0032] In the drawings, the driving unit 8 and the sample protection baffle 9 are shown as mechanisms separate from the sample stage 2 , but both or either one of them may be attached as a mechanism of the sample stage 2 .

[0033] Figure 2The structure example of the ion source 1 used in the ion milling device is shown. Here, a Penning type ion source is used as the ion source 1. The Penning type ion source includes: an anode 12, which is arranged in the ion source and is applied with a discharge voltage; and a first cathode 10 and a second cathode 11, which generate a potential difference with the anode 12 and generate electrons by the potential difference between the anode and the cathode. The generated electrons are affected by the magnetic field generated by the permanent magnet 13 and float and stay in the inside of the ion source 1. On the other hand, the ion source 1 is provided with a gas introduction hole 14 for introducing an inert gas from the outside, and argon gas is introduced as the inert gas. If argon gas is introduced into the ion source in which electrons are generated, argon atoms collide with the electrons to generate argon ions. The argon ions are induced by the accelerating electrode 15 to which an accelerating voltage is applied, and are ejected from the inside of the ion source through the ion ejection port 16 toward the processing object.

[0034] If the sample is processed by a Penning type ion source, the structural components inside the ion source may wear out, or tiny particles scattered from the sample may adhere to the ion ejection port 16, thereby changing the ion distribution released by the ion source. The wear and contamination of the structural components inside the ion source can be eliminated by regular replacement and cleaning of components, but it does not guarantee that the ion distribution of the ion beam irradiated by the ion source will be the same as before maintenance. In the case where the ion milling device requires high-precision reproducibility of the processed shape of the sample, it is necessary to confirm whether the ion distribution of the ion beam reproduces the desired ion distribution after the replacement operation and cleaning operation, and adjust the irradiation conditions of the ion source 1 according to the confirmation result.

[0035] In this regard, in the ion milling device of this embodiment, an ion beam measuring component 7 is set on the sample stage 2 or near it. While the ion beam measuring component 7 is driven in the X direction by the driving unit 8, the ion beam current is measured, thereby estimating the ion distribution of the non-focused ion beam irradiated from the ion source 1 to the sample.

[0036] Figure 3The present invention shows a structural example of a driving unit 8 for driving an ion beam measuring component 7. In the figure, a top view of the driving unit 8 and a cross-sectional view in a state where the ion beam measuring component 7 is fixed to the base 35 of the driving unit 8 are shown. The ion beam measuring component 7 is fixed to the driving unit 8 by a fixing component 36 of the base 35. The fixing component 36 is an insulator, and the ion beam measuring component 7 and the ion beam current detection wiring 37 are insulated from other structural components by the fixing component 36. The base 35 can reciprocate in the X direction by a driving mechanism. The driving mechanism of this example includes a motor 30, a bevel gear 31, a gear 32, and a track component 33. The bevel gear 31 and the gear 32 arranged on the driving shaft of the motor 30 transmit drive to the track component 33 arranged along the moving direction (X direction) of the base 35, thereby enabling the base 35 to reciprocate in the X direction. In addition, the motor 30 does not need to be specially arranged in the driving unit 8, and can also be used as a sample stage rotation driving source 3 for rotating the sample stage 2.

[0037] The ion beam measuring component 7 is put into a processed state by irradiating the ion beam from the ion source 1 during the measurement of the ion beam current. Since it is a component that is consumed for each measurement, it is suitable for components with low sputtering yield that are difficult to be processed by ions. In addition, a linear component is used as the ion beam measuring component 7, and the ion beam measuring component 7 moves in the irradiation range of the non-convergent ion beam, thereby grasping the ion distribution. This means that the diameter of the ion beam measuring component 7 determines the spatial resolution of the ion distribution that can be measured. Therefore, it is preferred that the diameter of the ion beam measuring component 7 is preferably a diameter smaller than the half-value width of the ion beam during processing. For example, a linear material of graphite carbon having a diameter of more than 0.2 mm and less than 0.5 mm can be used. In order to suppress the irregular behavior of ions caused by ion collision with the ion beam measuring component 7, the cross-sectional shape of the ion beam measuring component 7 is preferably circular. In addition to the linear material of graphite carbon, a linear material of tungsten can also be used. The ion beam measuring component 7 can be disassembled relative to the drive unit 8, and when the ion beam measuring component 7 is consumed by the ion beam, it is replaced with a new ion beam measuring component.

[0038] Figure 4This is a schematic diagram (top view) showing the situation of measuring the ion beam current in the ion milling device of this embodiment. An ion source 1, a sample table 2 facing the ion source 1, and an ion beam measuring component 7 are shown. The ion beam irradiated from the ion source 1 is non-focused, so the area 41 represented by the dotted line moves while diffusing radially. The ion beam measuring component 7 measures the ion beam current along the sample mounting surface 40 of the sample table 2 while moving the entire area of ​​the ion beam irradiation range in the X direction, for example, from the coordinate X0 to the coordinate X5. In this embodiment, an example of the ion beam measuring component 7 moving in the X direction is shown, but the ion beam irradiated from the ion source 1 diffuses in the X direction and the Y direction with the ion beam center B0 as the center, so the longitudinal direction of the ion beam measuring component 7 is set to the X direction, and the ion beam current is measured along the sample mounting surface 40 of the sample table 2. At the same time, a driving unit is formed to move the entire ion beam irradiation range in the Y direction, so that the ion beam current can be measured.

[0039] Figure 5A In the ion milling apparatus of this embodiment, the coordinates X0 to X5 (see Figure 4 ) is the result of measuring the ion beam current using the ion beam measuring component 7. As shown in the figure, the relationship between the beam measurement position and the ion beam current (herein referred to as "ion beam current distribution") is regarded as the distribution of ions irradiated from the ion source 1 to the sample 4. (A) is the distance D1 between the ion source and the sample, and (B) is the ion beam current measurement result when the distance D2 between the ion source and the sample (D2>D1). Furthermore, the multiple ion beam current distributions in (A) and (B) are the measurement results obtained by changing the discharge voltage of the ion source 1 (the discharge voltage is (A))(B) and is measured by changing the same way). In addition, the vertical axis is the ion beam current, but (A) and (B) are both expressed as values ​​obtained by standardization with a common reference.

[0040] Thus, by changing the distance from the ion source 1 to the sample, the ion distribution changes. In addition, even if the distance from the ion source 1 to the sample is the same, by changing the discharge voltage, the ion distribution changes.

[0041] Figure 5B The graph shown is made as Figure 5AThe two graphs shown are overlapped and displayed, and region 50 is a region sandwiched by the maximum and minimum values ​​of all the distributions contained in the two graphs. That is, it can be said that region 50 is a region where the ion distribution can be adjusted by adjusting two parameters, namely, the distance D between the ion source and the sample and the discharge voltage. In this embodiment, the ion distribution irradiated from the ion source 1 to the sample 4 is grasped by using the ion beam current distribution measured by the ion beam measuring component 7, and the irradiation conditions of the ion source 1 are adjusted so that the shape of the ion beam current distribution is close to the desired state, thereby improving the reproducibility of the processing shape of the sample by the ion milling device. Specifically, the distance from the ion source to the sample, the discharge voltage, and the gas flow rate are adjusted in the irradiation conditions of the ion source 1.

[0042] Figure 6 A block diagram related to ion distribution adjustment of an ion beam is shown. As an ion source 1, an Figure 2 The Penning ion source shown in FIG. Argon gas is introduced into the ion source 1 from the pipe 17 to generate argon ions for processing.

[0043] The discharge voltage V applied to the ion source 1 d and the accelerating voltage V a Generated by the power supply unit 60. In addition, the power supply unit 60 has an ammeter, the ammeter 61 measures the discharge current, and the ammeter 62 measures the ion beam current that flows when ions from the ion source 1 collide with the ion beam measurement unit 7. The discharge voltage V d and acceleration voltage V a The value of is set by the control unit 63.

[0044] In addition, the ion source 1 is fixed to the ion source position adjustment mechanism 5 , and the position of the ion source 1 can be independently moved in the X direction, the Y direction, and the Z direction.

[0045] The sample protection baffle 9 is disposed between the drive unit 8 and the sample 4, and can be moved up and down in the Y direction under the control of the control unit 63. A motor or a solenoid can be used as a driving source for the sample protection baffle 9, and in order to implement movement control, it is preferred to have a sensor for detecting the up and down movement position of the baffle. The sample protection baffle 9 is provided to prevent the sample 4 from being irradiated with unnecessary ion beams when the sample 4 is placed on the sample stage 2 to obtain the ion beam current distribution.

[0046] The power supply unit 60, the ion source position adjustment mechanism 5, the drive unit 8, the sample protection baffle 9, the sample stage 2, and the sample stage rotation drive source 3 are connected to the control unit 63, and the control unit 63 performs the acquisition of the ion beam current distribution, the adjustment of the ion beam irradiation conditions, and the processing of the sample. Furthermore, the control unit 63 is connected to the display unit 64, which functions as a user interface from the operator to the control unit 63, and also displays the sensor data indicating the operating state of the ion milling device collected by the control unit 63. For example, as the sensor data displayed on the display unit 64, the discharge voltage value V d , discharge current value, discharge voltage value V a , ion beam current value, etc.

[0047] exist Figure 6 In the ion milling apparatus shown, the Figure 7 The following describes a method of acquiring an ion beam current curve and adjusting ion beam irradiation conditions by the control unit 63 .

[0048] Step S701: The control unit 63 controls the driving unit 8 to move the ion beam measuring component 7 to the origin position in the X direction. Here, for simplicity of description, the origin position in the X direction is determined to coincide with the outermost position of the ion beam irradiation range. The method of obtaining the origin position is not limited to this.

[0049] Step S702: The control unit 63 performs movement control on the sample protection baffle 9 to move the sample protection baffle 9 to the beam shielding position.

[0050] Step S703: The control unit 63 controls the power supply unit 60, etc., to output an ion beam from the ion source 1 according to the ion beam irradiation conditions maintained as the current settings. The current settings refer to the ion beam irradiation conditions determined as the processing conditions of the sample 4. Usually, the acceleration voltage, discharge voltage, and gas flow rate of the ion source 1 when processing the sample 4 are determined.

[0051] Step S704: After the output of the ion beam starts, the control unit 63 controls the driving unit 8 to start the movement of the ion beam measuring component 7 in the X direction. Figure 4 As described in , the moving direction is from the outermost position (the origin position in the X direction) of the ion beam irradiation range toward the other end of the irradiation range. The control unit 63 manages the current position of the moved ion beam measuring unit 7 in the X direction.

[0052] Step S705: The ammeter 62 starts measuring the beam current flowing through the beam measuring unit 7 and the beam current detection wiring 37 by irradiating the beam measuring unit 7 with the ion beam from the ion source 1. The control unit 63 acquires and stores the beam current detection value digitized by the ammeter 62.

[0053] Step S706: The control unit 63 displays the acquired ion beam current value as the current detection result on the display unit 64. The display format is preferably Figure 5A The beam measurement position-ion beam current amount curve graph (ion beam current distribution) is shown. In addition, the current detection result can also be displayed on a host PC connected to the ion milling device via a LAN or serial line (not shown).

[0054] Step S707: The control unit 63 checks the current position of the ion beam measuring component 7 moved by the driving unit 8 in the X direction, and if not completed, repeats steps S704 to S706 until the ion beam measuring component 7 is completely moved in the entire ion beam irradiation range.

[0055] Step S708 : When confirming in step S707 that the ion beam measuring unit 7 has completed the movement of the entire ion beam irradiation range, the control unit 63 ends the movement of the ion beam measuring unit 7 .

[0056] Step S709: The control unit 63 calculates the adjustment amount based on the ion beam current measurement result. The comparison object of the adjustment amount uses the ion beam current measurement result that is similarly measured when determining the processing conditions suitable for processing the sample 4 and stored in the control unit 63, or the ion beam current measurement result measured last time. The operator can pre-set which comparison object to use. If the reference ion beam current distribution (reference ion distribution) used as the comparison object is ideally equal to the ion beam current distribution (ion distribution) obtained as the ion beam current measurement result measured this time, or the ion beam irradiation conditions are adjusted in an approximate manner, the reproducibility of the processing shape of the sample of the ion milling device can be improved. The degree of approximation can be determined depending on the degree of reproducibility of the sample processing shape required.

[0057] However, in this embodiment, the ion distribution is observed only by the ion beam current, so the acceleration voltage V a will not change. Because if the acceleration voltage V is changed a , even with the same ion beam current, the processing speed (polishing rate) of the sample will vary greatly. That is, the adjustment in this embodiment is based on the premise that the processing time used is not an adjustment object.

[0058] Figure 8A schematic diagram of the ion beam current distribution is shown. As a simple method for making the shape of the ion beam current distribution consistent, a method for adjusting the representative value of the shape of the ion beam current distribution so that its peak value P and half-value width HW (the extension of the ion beam current distribution where the ion beam current amount becomes half of the peak value P) are the same is described. This is because if the two values ​​are consistent, it can be evaluated that the shape of the ion beam current distribution is roughly the same. The parameters of the adjusted ion beam irradiation conditions are the discharge voltage of the ion source 1, the gas flow rate, and the distance D between the ion source 1 and the sample 4 (or the sample mounting surface of the sample stage 2 is roughly the same and is therefore represented by the sample 4).

[0059] By changing the distance between the ion source 1 and the sample 4, Figure 5A As shown, the peak value P can be adjusted mainly. In addition, by increasing the discharge voltage V d The diffusion of argon ions generated in the ion source 1 can be suppressed, and as a result, the half-value width HW can be adjusted. Similarly, when the gas flow rate increases, the diffusion of argon ions generated in the ion source 1 can be suppressed, and as a result, the half-value width HW can be adjusted. In this way, by adjusting the distance between the ion source 1 and the sample 4 and the discharge voltage V d Any value of the gas flow rate can make the ion beam current distribution close to the desired shape. Figure 5B As shown, by adjusting the distance between the ion source 1 and the sample 4 and the discharge voltage V d , a wider adjustment area can be obtained.

[0060] Here, an example of calculating the adjustment amount using the peak value P and half-value width HW of the ion beam current distribution is described, but more feature quantities of the distribution shape may be extracted for adjustment. For example, feature quantities related to the symmetry of the distribution shape may be extracted for adjustment.

[0061] Step S710: Based on the adjustment amount calculated in step S709, the ion beam irradiation conditions are adjusted. Specifically, the control unit 63 adjusts the distance between the ion source 1 and the sample 4 based on the control of the ion source position adjustment mechanism 5, and the discharge voltage V of the ion source 1 based on the control of the power supply unit 60. d One or more controls are executed based on the calculation result of step S709 in the control of the gas flow rate supplied to the ion source by the control of and the control of the gas supply mechanism (not shown).

[0062] Step S711: After the adjustment in step S710, if the ion beam current distribution is measured again, the process is repeated from step S701. If the measurement is not performed again, the adjustment is terminated.

[0063] Step S712: The control unit 63 moves the sample protection baffle 9 to the light beam non-shielding position, and the adjustment is completed.

[0064] in addition, Figure 7 The flowchart is an example and can be modified in various ways. For example, in step S706, the ion beam current measurement result and the reference ion beam current distribution as the comparison object of the adjustment amount can also be displayed overlapped. Furthermore, in a case where the operator determines that adjustment is not necessary through the overlapping display, a step of terminating the adjustment of the ion beam can also be provided. In addition, in step S710, the control unit 63 implements the control of the distance between the ion source 1 and the sample 4, but for example, the control amount can also be displayed on the display unit 64, and the operator manually moves the position of the ion source 1 through the ion source position adjustment mechanism 5 to make adjustments.

[0065] The invention completed by the present inventors has been specifically described above based on the embodiments, but the present invention is not limited to the described embodiments, and various modifications can be made without departing from the gist of the invention. Figure 1 In the structure, a sample protection baffle is provided for placing the ion beam to irradiate the sample when acquiring the ion beam current distribution, but the sample protection baffle 9 may not be provided if the irradiation of the sample by the ion beam during this period can be ignored. In addition, in the embodiment, an ion grinding device for plane grinding is used as an example, but the present invention can also be applied to an ion grinding device for profile grinding. In the case of profile grinding, there is a difference in the configuration in which the rotation axis (swing axis) of the sample stage 2 extends in the Y direction, but the irradiation conditions of the ion beam can be adjusted by the same structure.

[0066] Description of Reference Numerals

[0067] 1: ion source, 2: sample stage, 3: sample stage rotation drive source, 4: sample, 5: ion source position adjustment mechanism, 6: sample chamber, 7: ion beam measurement component, 8: drive unit, 9: sample protection baffle, 10, 11: cathode, 12: anode, 13: permanent magnet, 14: gas introduction hole, 15: acceleration electrode, 16: ion ejection port, 17: piping, 30: motor, 31: bevel gear, 32: gear, 33: track component, 35: base, 36: fixing component, 37: ion beam current detection wiring, 40: sample mounting surface, 60: power supply unit, 61, 62: ammeter, 63: control unit, 64: display unit.

Claims

1. An ion milling device, characterized in that: The ion milling device has: Ion source; a sample stage on which a sample to be processed by irradiation with an unfocused ion beam from the ion source is placed; a driving unit disposed between the ion source and the sample stage and configured to move a linear ion beam measuring component extending in a first direction in a second direction orthogonal to the first direction; as well as Control Department, The control unit moves the ion beam measuring component within the irradiation range of the ion beam through the driving unit when the ion beam is output from the ion source under the first irradiation condition, measures the ion beam current flowing through the ion beam measuring component by irradiating the ion beam to the ion beam measuring component, and stores an ion beam current distribution indicating the relationship between the ion beam current and the position of the ion beam measuring component when the ion beam current is measured. The control unit obtains an adjustment value of the first irradiation condition based on the ion beam current distribution, The control unit compares the ion beam current distribution with a preset reference ion beam current distribution and obtains an adjustment value of the first irradiation condition. The ion milling apparatus includes a display unit that displays the ion beam current distribution and the reference ion beam current distribution in an overlapping manner.

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