Calibration assembly and semiconductor processing device
By calibrating components to detect and adjust the position of the wafer in the semiconductor process device, the problem of uneven cutting edges in the prior art is solved, and more efficient production effect and factory efficiency are achieved.
Patent Information
- Application Number
- CN202411524379.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-29
- Publication Date
- 2025-02-28
AI Technical Summary
In the existing semiconductor process, the wafer edge cutting process cannot accurately define the position of the wafer, resulting in uneven edge cutting widths, affecting the production effect.
A calibration component is provided that by transmitting and receiving a calibration beam, detecting energy losses, adjusting the wafer position so that the actual energy losses are less than a preset value, thereby ensuring that the wafer is in a preset position.
The consistent placement position is achieved every time the wafer edge is cut, improving the wafer production effect and factory work efficiency.
Smart Images
Figure CN119542228A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a calibration component and a semiconductor process device including the calibration component. Background Art
[0002] In the semiconductor manufacturing process, a wafer edge cutting process is often required to remove undesirable defects or flaws on the edge of the wafer, making its edge smoother and more regular, thereby improving the consistency and stability of the wafer and facilitating subsequent processing and packaging.
[0003] At present, the wafer edge cutting process uses CCD (charge coupled device) equipment to measure the diameter of the wafer and determine the position of the wafer at the same time, thereby adjusting the feed displacement of the cutting tool. However, this positioning method not only has a large error in calculating the wafer diameter, but also cannot limit the specific placement of the wafer, that is, it cannot guarantee that the area where the edge of the wafer is cut is the same each time. When multiple wafer cutting steps are required, the width of the wafer cut edge will be uneven, thus affecting the wafer manufacturing effect. Summary of the invention
[0004] The present application provides a calibration component and a semiconductor process device, wherein the calibration component can quickly locate the placement position of a wafer each time an edge cut is performed, thereby improving the manufacturing effect of the wafer.
[0005] To solve the above technical problems, the first aspect of the present application provides a calibration component for calibrating and adjusting the position of a wafer to be processed in a semiconductor process device on a processing platform, comprising: a transmitting device for transmitting a calibration beam, wherein the calibration beam is used to limit a preset wafer position of the processing platform; a receiving device for receiving the calibration beam and detecting the energy of the calibration beam when it is received to obtain an actual energy loss of the calibration beam, and comparing the actual energy loss of the calibration beam with the preset energy loss, and adjusting the position of the wafer to be processed on the processing platform so that the actual energy loss of the calibration beam is less than the preset energy loss, thereby calibrating the wafer to be processed to be within the range of the preset wafer position of the processing platform.
[0006] In some embodiments, the calibration component further includes: at least two reflection devices for changing the path of the calibration light beam so that the calibration light beam forms a closed figure, and the closed figure defines a preset wafer position of the processing platform.
[0007] In some embodiments, the inscribed circle of the closed figure formed by the calibration light beam is a preset wafer position of the processing platform.
[0008] In some embodiments, the diameter of the inscribed circle of the closed figure formed by the calibration light beam is the maximum diameter of the wafer to be processed.
[0009] In some embodiments, the diameter of the inscribed circle of the closed figure formed by the calibration light beam is 299.95 mm-300.04 mm.
[0010] In some embodiments, the preset energy loss of the calibration light beam is 0.3%-0.8%.
[0011] In some embodiments, the reflecting device is a mirror, the calibration assembly includes two mirrors, and the shape formed by the calibration light beam after being reflected by the mirrors is a triangle.
[0012] In some embodiments, the angles formed by the incident light and the reflected light of the calibration light beam reflected by the mirror and the mirror are both 60°, and the shape formed by the calibration light beam after being reflected by the mirror is an equilateral triangle.
[0013] In some embodiments, the center of the preset wafer position of the processing platform coincides with the center of the processing platform.
[0014] In order to solve the above technical problem, the second aspect of the present application further provides a semiconductor process device, including any calibration component as described above.
[0015] The present application provides a calibration component for calibrating and adjusting the position of a wafer to be processed on a processing platform in a semiconductor process device, comprising: a transmitting device for transmitting a calibration beam, the calibration beam being used to define a preset wafer position of the processing platform; a receiving device for receiving the calibration beam and detecting the energy of the calibration beam when it is received to obtain the actual energy loss of the calibration beam, comparing the actual energy loss of the calibration beam with the preset energy loss, and adjusting the position of the wafer to be processed on the processing platform so that the actual energy loss of the calibration beam is less than the preset energy loss, thereby calibrating the wafer to be processed to be within the range of the preset wafer position of the processing platform. In this way, the placement position of the wafer can be quickly positioned to be the same each time the edge is cut, thereby improving the wafer manufacturing effect and the factory's work efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. Among them:
[0017] Figure 1 A partial structural schematic diagram of a semiconductor process device provided in some embodiments of the present application;
[0018] Figure 2 It is a schematic diagram of a structure in which a wafer to be processed is cut twice in steps in the prior art;
[0019] Figure 3 A schematic diagram of the structure of a calibration component provided in some embodiments of the present application;
[0020] Figure 4 A schematic diagram of the structure of a calibration component provided in some embodiments of the present application that has multiple groups of transmitting devices and receiving devices. DETAILED DESCRIPTION
[0021] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0022] The terms "first" and "second" in this application are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0023] All directional indications in the embodiments of the present application (such as up, down, left, right, front, back, top, bottom...) are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.
[0024] In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products or devices.
[0025] Unless otherwise defined, the term “substantially” mentioned in this application, with respect to numerical quantities or quantitative relationships, can be understood as a range of approximately ±15% of a certain numerical value.
[0026] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.
[0027] See also Figure 1 , Figure 1 A partial structural schematic diagram of a semiconductor process device provided for some embodiments of the present application. The semiconductor process device 10 includes a processing platform 100 and a cutting device 200. In some embodiments, the semiconductor process device 10 is a wafer edge cutting device; in other embodiments, the semiconductor process device 10 can also be other semiconductor process devices that require calibration and adjustment of the placement position of the wafer 20 to be processed. The wafer 20 to be processed is placed on the processing platform 100, and the cutting device 200 is used to cut the edge of the wafer 20 to be processed once or in multiple steps.
[0028] See also Figure 1 and Figure 2 , Figure 2 It is a schematic diagram of the structure of performing two step-by-step cutting of the wafer to be processed in the prior art. At present, the semiconductor process device 10 calculates the average value of multiple fitting data through the CCD (charge coupled device) device to obtain the diameter of the wafer to be processed 20 and judges the position of the wafer to be processed 20 on the processing platform 100, thereby adjusting the feed displacement of the cutting tool 200. However, this CCD device fitting measurement method not only has a large measurement error for the diameter of the wafer to be processed 20, but also cannot limit the position of the wafer to be processed 20 placed on the processing platform 100 to be the same each time it is cut, resulting in the cutting range of the wafer to be processed 200 being different each time, which in turn causes uneven cutting edges of the wafer to be processed 20. Figure 2As shown, when the wafer 20 to be processed needs to be cut twice in steps, the positions of the wafer 20 to be processed placed on the processing platform 100 are different twice, and the CCD device needs to be fitted and measured separately. However, the data of the two fittings of the CCD device are different, resulting in different ranges of the cutting tool 200 cutting the wafer 20 to be processed twice, that is, the first cutting path 210a of the cutting tool 200 and the second cutting path 210b of the cutting tool 200 are different relative to the wafer 20 to be processed, which leads to the area 21 of the wafer 20 to be processed not being cut during the second cutting, which will cause the cutting edge width of the wafer 20 to be processed to be uneven, affecting the manufacturing effect of the wafer 20 to be processed. For example, when the wafer 20 to be processed is an image sensor, if the cutting edge width of the wafer 20 to be processed is uneven, it will cause electrons to enter the photodiode area, generate dark current, and affect the white pixel performance.
[0029] In order to solve the above technical problems, the present application provides a calibration component 300 for calibrating and adjusting the position of the wafer 20 to be processed in the semiconductor process device 10 on the processing platform 100. Figure 3 , Figure 3A schematic diagram of the structure of the calibration component provided for some embodiments of the present application. The calibration component 300 includes a transmitter 310 and a receiver 320. The transmitter 310 is used to transmit a calibration beam 330, and the calibration beam 330 is used to define a preset wafer position 110 of the processing platform 100. In some embodiments, the transmitter 310 is a laser transmitter, and the calibration beam 330 is a laser; in other embodiments, the transmitter 310 can also be set as other beam transmitters, which is not limited here. The receiver 320 is used to receive the calibration beam 330 and detect the energy of the calibration beam 330 when it is received, so as to obtain the actual energy loss of the calibration beam 330. The wafer 20 to be processed is placed on the processing platform 100. When the wafer 20 to be processed is not located in the preset wafer position 110 of the processing platform 100, the calibration beam 330 emitted by the transmitting device 310 will be partially or completely blocked by the wafer 20 to be processed, resulting in a large energy loss, and even causing the receiving device 320 to fail to receive the residual calibration beam 330; when the wafer 20 to be processed is located in the preset wafer position 110 of the processing platform 100, the calibration beam 330 will not be blocked by the wafer 20 to be processed, and will not generate energy loss, or will only generate a small energy loss. Therefore, a preset energy loss is set, and the preset energy loss is the maximum energy loss allowed to be generated by the calibration beam 330 when the wafer 20 to be processed is placed in the preset wafer position 110 of the processing platform 100. The actual energy loss of the calibration beam 330 is compared with the preset energy loss, and the position of the wafer 20 to be processed on the processing platform 100 is adjusted at the same time. When the actual energy loss of the calibration beam 330 is less than the preset energy loss, the wafer 20 to be processed can be regarded as being located within the range of the preset wafer position 110 of the processing platform 100. In this way, when the position of the calibration beam 330 emitted by the emitting device 310 is not changed, the preset wafer position 110 of the processing platform 100 is fixed, so that the position of the wafer 20 to be processed placed on the processing platform 100 is the same when the edge cutting is performed step by step, that is, the cutting path 210 of the set cutting device 200 is the same each time the wafer is cut, so that the area of the wafer 20 to be processed for multiple edge cuttings is also the same, thereby avoiding uneven cutting of the wafer 20 to be processed, improving the manufacturing effect of the wafer 20 to be processed, and improving the work efficiency of the factory.
[0030] See also Figure 3In some embodiments, the receiving device 320 is provided with a first display screen 321 and a second display screen 322. The first display screen 321 is used to display the first energy value of the calibration beam 330 when it is emitted by the emitting device 310, and the second display screen 322 is used to display the second energy value of the calibration beam 330 when it is received by the receiving device 320, so that the actual energy loss of the calibration beam 330 can be calculated by the first energy value and the second energy value. In some embodiments, the preset energy loss of the calibration beam 330 is 0.3%-0.8%. Among them, the optimal value of the preset energy loss of the calibration beam 330 is 0.5%. That is, when the actual energy loss of the calibration beam 330 detected by the emitting device 310 is less than 0.5%, the wafer 20 to be processed is calibrated and adjusted within the range of the preset wafer position 110 of the processing platform 100. In other embodiments, the receiving device 320 can also directly display the actual energy loss value of the calibration beam 330, which can more intuitively determine whether the wafer 20 to be processed is located within the preset wafer position 110 of the processing platform 100.
[0031] Continue to see Figure 3 In some embodiments, in order to improve the accuracy of calibrating and adjusting the wafer 20 to be processed to the preset wafer position 110 of the processing platform 100, the calibration assembly 300 further includes at least two reflecting devices 340, and the reflecting devices 340 are used to change the path of the calibration beam 330 so that the calibration beam 330 forms a closed figure, and the closed figure defines the preset wafer position 110 of the processing platform 100. In some embodiments, since the shape of the wafer 20 to be processed is circular, the inscribed circle of the closed figure formed by the calibration beam 330 is set to be the preset wafer position 110 of the processing platform 100. In some embodiments, in order to further improve the accuracy of calibrating and adjusting the wafer 20 to be processed to the preset wafer position 110 of the processing platform 100, the diameter of the inscribed circle of the closed figure formed by the calibration beam 330, that is, the diameter of the preset wafer position 110 of the processing platform 100 is set to be the maximum value of the diameter of the wafer 20 to be processed, thereby making the preset wafer position 110 of the processing platform 100 the only position of the wafer 20 to be processed located on the processing platform 100. In some embodiments, the diameter of the inscribed circle of the closed figure formed by the calibration beam 330, that is, the preset wafer position 110 of the processing platform 100, is 299.95 mm-300.04 mm. Among them, the optimal value of the diameter of the inscribed circle of the closed figure formed by the calibration beam 330, that is, the preset wafer position 110 of the processing platform 100, is 300.02 mm.
[0032] In some embodiments, the reflective device 340 is configured as a mirror 340a, and the calibration assembly 300 includes two mirrors 340a, such as Figure 3As shown, the calibration beam 330 is reflected by the mirror 340a to form a triangle, and the inscribed circle of the triangle is the preset wafer position 110 of the processing platform 100. Figure 3 In some embodiments, the angle α formed by the incident light reflected by the calibration beam 330 through the mirror 340a and the mirror 340a, and the angle β formed by the reflected light reflected by the calibration beam 330 through the mirror 340a and the mirror 340a are both 60°, so that the figure formed by the calibration beam 330 after being reflected by the mirror 340a is an equilateral triangle. In other embodiments, other numbers of mirrors 340a may be provided so that the figure formed by the calibration beam 330 after being reflected by the mirror 340a is other polygons. At the same time, according to different requirements, the angle formed by the incident light and the reflected light of the calibration beam 330 through the mirror 340a and the mirror 340a may be set to other angles. For example, the calibration component 300 may be provided with three mirrors 340a, so that the figure formed by the calibration beam 330 after being reflected by the three mirrors 340a is a quadrilateral, and the inscribed circle of the quadrilateral is the preset wafer position 110 of the processing platform 100. Furthermore, the angle α formed by the incident light of the calibration beam 330 reflected by the mirror 340a and the mirror 340a, and the angle β formed by the reflected light of the calibration beam 330 reflected by the mirror 340a and the mirror 340a can be set to 45°, so that the shape formed by the calibration beam 330 after being reflected by the mirror 340a is a square.
[0033] See also Figure 4 , Figure 4 A schematic diagram of the structure of a calibration component provided in some embodiments of the present application having multiple groups of transmitting devices and receiving devices. In some embodiments, the calibration component 300 may be provided with multiple groups of transmitting devices 310 and receiving devices 320 to respectively transmit, receive and detect the energy of the calibration beam 330. The multiple calibration beams 330 emitted by the multiple transmitting devices 310 form a closed figure. Similarly, the inscribed circle of the closed figure is the preset wafer position 110 of the processing platform 100. At this time, a smaller preset energy loss of the calibration beam 330 may be set. For example, the preset energy loss of the calibration beam 330 is set to 0.3%. That is, when the receiving device 320 detects that the actual energy loss of the calibration beam 330 is less than 0.3%, the wafer 20 to be processed is calibrated and adjusted to the preset wafer position 110 of the processing platform 100. Figure 4As shown, in some embodiments, the calibration component 300 may be provided with three groups of emitting devices 310 and receiving devices 320, and the closed figure formed by the three calibration beams 330 emitted by the three emitting devices 310 is a triangle, and the inscribed circle of the triangle is the preset wafer position 110 of the processing platform 100. In other embodiments, the calibration component 300 may also be provided with other numbers of emitting devices 310 and receiving devices 320. For example, the calibration component 300 may be provided with four groups of emitting devices 310 and receiving devices 320, and the closed figure formed by the four calibration beams 330 emitted by the four emitting devices 310 is a quadrilateral, and the inscribed circle of the quadrilateral is the preset wafer position 110 of the processing platform 100. In some embodiments, the angle at which the emitting device 310 emits the calibration beam 330 may also be changed according to different requirements. Therefore, the actual energy loss of the calibration beam 330 on different sides of the preset wafer position 110 of the processing platform 100 can be detected by multiple receiving devices 320, so that the offset direction of the wafer 20 to be processed when it is located on the processing platform 100 can be more intuitively determined, and the wafer 20 to be processed can be adjusted more quickly within the preset wafer position 110 of the processing platform 100.
[0034] In some embodiments, the center of the preset wafer position 110 of the processing platform 100 coincides with the center of the processing platform 100. Thus, the center of the calibrated and adjusted wafer 20 to be processed and the center of the processing platform 100 can be located on the same vertical line. In other embodiments, the center of the preset wafer position 110 of the processing platform 100 can also be set to other positions, as long as the preset wafer position 110 of the processing platform 100 remains unchanged so that the area of the wafer 20 to be processed for the step-by-step multiple cutting process is the same.
[0035] The present application provides a calibration component 300, which is used to calibrate and adjust the position of the wafer 20 to be processed in the semiconductor process device 10 on the processing platform 100, including: a transmitting device 310, which is used to transmit a calibration beam 330, and the calibration beam 330 is used to define the preset wafer position 110 of the processing platform 100; a receiving device 320, which is used to receive the calibration beam 330 and detect the energy of the calibration beam 330 when it is received, so as to obtain the actual energy loss of the calibration beam 330, compare the actual energy loss of the calibration beam 330 with the preset energy loss, and adjust the position of the wafer 20 to be processed on the processing platform 100 so that the actual energy loss of the calibration beam 330 is less than the preset energy loss, thereby calibrating the wafer 20 to be processed to be within the range of the preset wafer position 110 of the processing platform 100. In this way, the placement position of the wafer 20 to be processed can be quickly positioned to be the same when performing the step-by-step multiple edge cutting process, thereby improving the wafer manufacturing effect and improving the factory's work efficiency.
[0036] The above are only implementation methods of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.
Claims
1. A calibration component for calibrating and adjusting the position of a wafer to be processed on a processing platform in a semiconductor process device, characterized in that: include: An emitting device, used for emitting a calibration light beam, wherein the calibration light beam is used for defining a preset wafer position of the processing platform; A receiving device is used to receive the calibration beam and detect the energy of the calibration beam when it is received to obtain the actual energy loss of the calibration beam, compare the actual energy loss of the calibration beam with the preset energy loss, and adjust the position of the wafer to be processed on the processing platform so that the actual energy loss of the calibration beam is less than the preset energy loss, thereby calibrating the wafer to be processed to be within the range of the preset wafer position of the processing platform.
2. The calibration assembly according to claim 1, characterized in that Also includes: At least two reflecting devices are used to change the path of the calibration light beam so that the calibration light beam forms a closed figure, and the closed figure defines a preset wafer position of the processing platform.
3. The calibration assembly according to claim 2, characterized in that The inscribed circle of the closed figure formed by the calibration light beam is the preset wafer position of the processing platform.
4. The calibration assembly according to claim 3, characterized in that The diameter of the inscribed circle of the closed figure formed by the calibration light beam is the maximum diameter of the wafer to be processed.
5. The calibration assembly according to claim 4, characterized in that The diameter of the inscribed circle of the closed figure formed by the calibration light beam is 299.95mm-300.04mm.
6. The calibration assembly according to claim 1, characterized in that The preset energy loss of the calibration light beam is 0.3%-0.8%.
7. The calibration assembly according to claim 2, characterized in that The reflecting device is a mirror, the calibration component includes two mirrors, and the shape formed by the calibration light beam after being reflected by the mirrors is a triangle.
8. The calibration assembly according to claim 7, characterized in that The angles formed by the incident light and the reflected light of the calibration light beam reflected by the mirror and the mirror are both 60°, and the figure formed by the calibration light beam after being reflected by the mirror is an equilateral triangle.
9. The calibration assembly according to claim 1, characterized in that The center of the preset wafer position of the processing platform coincides with the center of the processing platform.
10. A semiconductor process device, characterized in that: Comprising a calibration component as described in any one of claims 1-9.