Packaging structure of intelligent power module, driving circuit and electronic product

Abstract

The invention provides a packaging structure of an intelligent power module, a driving circuit and an electronic product. The packaging structure comprises a packaging body, a first base island, a second base island, a third base island, a driving chip, a first power tube and a second power tube, the driving chip, the first power tube and the second power tube are respectively arranged on the first base island, the second base island and the third base island, the driving chip, the first power tube and the second power tube form a half-bridge driving structure, and each signal end is connected with a corresponding chip pin; wherein the first base island and the second base island are arranged on the same side of the third base island and are sequentially arranged along the side edge of the third base island, and the projection of the first base island, the projection of the second base island and the projection of the third base island on the side edge are partially or completely overlapped. The original structure and pin functions of the intelligent power module are reserved, the size of the module is greatly reduced, and the intelligent power module has the advantages of small size, good heat dissipation, high power and the like, and is suitable for realizing the design of a corresponding miniaturized circuit board.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor devices, and in particular to a packaging structure, a driving circuit and an electronic product of an intelligent power module. Background Art

[0002] Intelligent Power Modules (IPMs) are power devices and driver ICs packaged together, and also integrate undervoltage, overcurrent, and overheating protection functions. Even in the case of overload, overtemperature or other improper use, the IPM will not be damaged, and the reliability, heat dissipation and anti-interference capabilities of the entire system solution are strong, and the peripheral circuit structure is simple, which is more advantageous than traditional discrete devices. Power field effect transistors (Power MOSFETs) are often used as power switching devices for IPMs due to their high input impedance, low drive power, no secondary breakdown problems, high switching frequency, good thermal stability and strong radiation resistance, and are gradually entering the consumer, industrial and automotive fields. Bridge circuits are widely used in the field of motor control, such as half-bridge circuits, full-bridge circuits and three-phase drive circuits, while low-power IPMs usually use two complementary conduction switches to form a half-bridge circuit.

[0003] With the popularity of miniaturized electrical appliances today, the requirements for IPM size are getting higher and higher. How to further reduce the size of IPM so that it is suitable for small household appliances such as fans, hair dryers and air purifiers has become one of the urgent problems to be solved by technicians in this field.

[0004] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a packaging structure, a driving circuit and an electronic product of an intelligent power module, so as to solve the problem that the IPM in the prior art is large in size and not suitable for small household appliances.

[0006] To achieve the above-mentioned object and other related objects, the present invention provides a packaging structure of an intelligent power module, wherein the packaging structure of the intelligent power module at least comprises:

[0007] A package body, a first base island, a second base island, a third base island, a driver chip, a first power tube and a second power tube arranged in the package body;

[0008] The driving chip is arranged on the first base island, the first power tube is arranged on the second base island, and the second power tube is arranged on the third base island. The driving chip, the first power tube and the second power tube form a half-bridge driving structure, and each signal end is connected to a corresponding chip pin;

[0009] Among them, the first base island and the second base island are arranged on the same side of the third base island, and are arranged in sequence along the side of the third base island, the projections of the first base island and the third base island on the side partially or completely overlap, and the projections of the second base island and the third base island on the side partially or completely overlap.

[0010] Optionally, the third base island is aligned with one end of the second base island, and the other end of the third base island is located on one side of the first base island.

[0011] More optionally, the spacing between the first base island, the second base island and the third base island is set to 0.15mm-0.2mm.

[0012] Optionally, the first power tube is an upper bridge arm power tube, and the second power tube is a lower bridge arm power tube; or the first power tube is a lower bridge arm power tube, and the second power tube is an upper bridge arm power tube;

[0013] The power supply terminal, the driving signal input terminal, the common ground terminal and the protection terminal of the driving chip are respectively connected to the corresponding chip pins through leads;

[0014] The drain at the bottom of the upper bridge arm power tube is electrically connected to the corresponding base island and the DC positive pin of the chip; the gate of the upper bridge arm power tube is connected to the high-side drive signal output end of the driver chip through a lead; the source of the upper bridge arm power tube is connected to the high-side floating end of the driver chip through a lead, and is also connected to the source of the lower bridge arm power tube or the high-side floating pin of the chip through a lead;

[0015] The drain at the bottom of the lower bridge arm power tube is electrically connected to the corresponding base island and the high-side floating pin of the chip; the gate of the lower bridge arm power tube is connected to the low-side drive signal output end of the driving chip through a lead, and the source of the lower bridge arm power tube is connected to the DC negative pin of the chip through a lead.

[0016] More optionally, the first base island is electrically connected to a common ground pin of the chip.

[0017] More optionally, the power supply end of the driver chip includes a high-side floating power supply end and a low-side power supply end, the drive signal input end of the driver chip includes a high-side drive signal input end and a low-side drive signal input end, and the protection end of the driver chip is a temperature output end.

[0018] More optionally, the bottom of the driving chip is attached to the first base island via a non-conductive film.

[0019] More optionally, the upper surface of the first base island is plated with silver and has a rough surface.

[0020] More optionally, the spacing between the low-voltage pins of the chip is set to 0.25 mm-0.3 mm respectively; the spacing between the low-voltage pin and the high-voltage pin of the chip is not less than 1 mm.

[0021] More optionally, the packaging structure of the intelligent power module adopts a QFN packaging form.

[0022] More optionally, the size of the packaging structure of the intelligent power module is less than 7 mm*7 mm.

[0023] In order to achieve the above-mentioned object and other related objects, the present invention further provides a driving circuit, which includes: two or three groups of packaging structures of the above-mentioned intelligent power modules.

[0024] In order to achieve the above-mentioned object and other related objects, the present invention further provides an electronic product, which at least includes: the packaging structure of the above-mentioned intelligent power module.

[0025] As described above, the packaging structure, driving circuit and electronic product of the intelligent power module of the present invention have the following beneficial effects:

[0026] 1. The packaging structure of the intelligent power module of the present invention is a half-bridge circuit structure, and the half-bridge circuit structure is one of the most widely used circuit structures in inverter, drive and other circuits. Therefore, the packaging structure of the intelligent power module of the present invention has a simple circuit structure, a small size, a low development cost, is suitable for integration, and can maximize benefits.

[0027] 2. The packaging structure, driving circuit and electronic product of the intelligent power module of the present invention optimize the internal structure of the package body, and the chip distribution inside the packaging cavity is more compact, thereby reducing the development cost.

[0028] 3. The packaging structure, drive circuit and electronic product of the intelligent power module of the present invention improve the chip mounting method of the drive chip, greatly reduce the chip drop rate, and greatly improve the product reliability.

[0029] 4. The packaging structure, driving circuit and electronic products of the invented intelligent power module not only retain the original pin functions, but also integrate temperature monitoring and undervoltage protection functions. Under normal working conditions, they monitor the working environment temperature and working voltage, and can automatically cut off power and alarm when the temperature or voltage is abnormal, thereby ensuring the safe use of household appliances. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1A three-dimensional schematic diagram of the back side of a package showing a half-bridge circuit structure of a QFN package.

[0031] Figure 2 A three-dimensional schematic diagram of the front side of a package showing a half-bridge circuit structure of a QFN package.

[0032] Figure 3 Shown is a schematic diagram of the internal structure of the packaging structure of the intelligent power module of the present invention.

[0033] Figure 4 Shown is a circuit schematic diagram of the packaging structure of the intelligent power module of the present invention.

[0034] Component number description

[0035] 1 Half-bridge circuit structure of QFN package

[0036] 11 MOS tube base island

[0037] 12 MOS tube base island

[0038] 13 Driver chip base island

[0039] 2 Intelligent Power Module Packaging Structure

[0040] 21 First Base Island

[0041] 22 Second Base Island

[0042] 23 Third Base Island DETAILED DESCRIPTION

[0043] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0044] See also Figure 1 to Figure 4 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0045] The QFN (Quad Flat No-leads Package) package has good electrical and thermal performance, and is smaller and lighter than the traditional SOP (Small Out-Line Package), DIP (dual in-line package) and SIP (System In a Package) packages. Figure 1 , 2 The figure shows a half-bridge circuit structure 1 of a QFN package, wherein the base islands 11 and 12 of the two MOS tubes have the same structure and size and are arranged side by side against the first frame of the chip; the base island 13 of the driver chip is located on the side of the base islands 11 and 12 of the two MOS tubes away from the first frame; the size of the half-bridge circuit structure of the QFN package is still limited to a certain extent, and therefore, it cannot better meet the volume requirements of small household appliances for IPM.

[0046] Based on the above reasons, the present invention provides a packaging structure of an intelligent power module, which effectively saves the internal space of the package and further reduces the size of the IPM by reasonably setting the positions of the base island and the chip inside the package.

[0047] like Figure 3 As shown, the present invention provides a packaging structure 2 of an intelligent power module, and the packaging structure 2 of the intelligent power module includes:

[0048] A package body (not shown in the figure), a first base island 21, a second base island 22, a third base island 23, a driver chip IC, a first power tube Q1 and a second power tube Q2 are arranged in the package body. The driver chip IC is arranged on the first base island 21, the first power tube Q1 is arranged on the second base island 22, and the second power tube Q2 is arranged on the third base island 23. The driver chip IC, the first power tube Q1 and the second power tube Q2 form a half-bridge driving structure, and each signal end is connected to a corresponding chip pin; wherein the first base island 21 and the second base island 22 are arranged on the same side of the third base island 23, and are arranged in sequence along the side of the third base island 23, the first base island 21 and the third base island 23 partially or completely overlap in projection on the side, and the second base island 22 and the third base island 23 partially or completely overlap in projection on the side.

[0049] Specifically, the first base island 21 and the second base island 22 are arranged inside the packaging structure 2 of the intelligent power module and are located in the first area; the third base island 23 is arranged inside the packaging structure 2 of the intelligent power module and is located in the second area; the first area and the second area are distributed along the first direction (left and right). The first base island 21 and the second base island 22 are laid in the first area and distributed along the second direction (perpendicular to the first direction); the spacing between the first base island 21 and the second base island 22 is set to 0.15mm-0.2mm, including but not limited to 0.16mm, 0.165mm, 0.17mm, 0.175mm, 0.18mm, 0.85mm, 0.19mm, in this example, it is set to 0.15mm; the size of the second base island 22 is larger than the size of the first base island 21, and in this example, the side length of the second base island 22 in the second direction is larger than the side length of the first base island 21 in the second direction. The third base island 23 is laid in the second area, and the side length of the third base island 23 in the second direction is greater than the side length of the first base island 21 and the second base island 21 in the second direction; in this example, the third base island 23 is aligned with one end of the second base island 22 (in the first direction), and the other end of the third base island 23 is located on one side of the first base island 21 (that is, the projection of the other end of the third base island 23 along the first direction falls into the projection of the first base island 21 along the first direction). In actual use, the third base island 23 can also be aligned with one end of the first base island 21, and the chip pin position can be adaptively adjusted; the spacing between the third base island 23 and the first base island 21 and the second base island 22 is set to 0.15mm-0.2mm, including but not limited to 0.16mm, 0.165mm, 0.17mm, 0.175mm, 0.18mm, 0.85mm, 0.19mm, and in this example, it is set to 0.15mm. In the present invention, the second base island and the third base island are designed asymmetrically, and the staggered distribution of the three base islands saves the space inside the package, thereby reducing the size of the package structure.

[0050] Specifically, the first base island 21 may also be provided with an extension portion, which is located in the second area and distributed along the second direction with the third base island 23; the extension portion can be used to realize the electrical connection between the chip pin and the first base island 21, and can also be used for heat dissipation. The specific structure is set according to actual use and will not be described here one by one.

[0051] It should be noted that the first power tube Q1 and the second power tube Q2 are the upper bridge arm power tube and the lower bridge arm power tube, respectively, and the corresponding relationship is interchangeable (that is, the base island size corresponding to the upper bridge arm power tube is larger, or the base island size corresponding to the lower bridge arm power tube is larger, either is acceptable). That is to say, the first power tube Q1 is the upper bridge arm power tube, and the second power tube Q2 is the lower bridge arm power tube; or the first power tube Q1 is the lower bridge arm power tube, and the second power tube Q2 is the upper bridge arm power tube; in this embodiment, the first power tube Q1 is the upper bridge arm power tube, and the second power tube Q2 is the lower bridge arm power tube as an example for explanation. When the corresponding relationship is interchanged, the connection relationship can be adaptively adjusted, and no further details are given here. In addition, the first power tube Q1 and the second power tube Q2 can be any type of power tube, including but not limited to IGBT and MOSFET. In this example, MOSFET is used.

[0052] Specifically, Figure 4 As shown, in the present embodiment, in the half-bridge driving structure, the high-side driving signal output end of the driving chip IC is connected to the gate of the first power tube Q1, the low-side driving signal output end of the driving chip IC is connected to the gate of the second power tube Q2, the drain of the first power tube Q1 is used as the DC positive end, the source of the first power tube Q1 is connected to the drain of the second power tube Q2 and serves as the high-side floating end, and the source of the second power tube Q2 is used as the DC negative end. The ports of the driver chip IC can be set according to actual needs. As an example, the driver chip IC also includes a high-side floating power supply terminal VB, a low-side power supply terminal VCC, a high-side drive signal input terminal HIN, a low-side drive signal input terminal LIN, a common ground terminal COM, a temperature output terminal VTS (for temperature protection and undervoltage protection) and a high-side floating ground terminal VS. The high-side floating ground terminal VS of the driver chip IC is connected to the source of the first power tube Q1 and the drain of the first power tube Q2; a bootstrap diode is also arranged between the high-side floating power supply terminal VB and the low-side power supply terminal VCC. The bootstrap diode can be arranged outside the packaging structure 2 of the intelligent power module, or inside the packaging structure 2 of the intelligent power module, or integrated in the driver chip IC.

[0053] Specifically, Figure 3As shown, in this embodiment, the packaging structure 2 of the intelligent power module is provided with 18 chip pins, wherein chip pin 1 is the low-side power pin VCC of the chip, chip pin 2 is the high-side drive signal input pin HIN of the chip, chip pin 3 is the low-side drive signal input pin LIN of the chip, chip pins 4 and 5 are the common ground pins COM of the chip (and connected to the first base island 21 in this example), chip pin 6 is the temperature output pin VTS of the chip, chip pins 7, 8, and 9 are the DC negative pins PGND of the chip, chip pins 10, 11, 12, and 13 are the high-side floating pins VS of the chip (and connected to the third base island 23 in this example), and chip pins 14, 15, 16, and 17 are the DC positive pins P of the chip (and connected to the second base island 22 in this example). In this embodiment, the width of each pin of the chip is set to 0.25 mm to 0.35 mm, and as an example, it is set to 0.3 mm. The spacing of each low-voltage pin of the chip is set to 0.25mm-0.3mm, including but not limited to 0.26mm, 0.27mm, 0.28mm, and 0.29mm, wherein the low-side power pin VCC, the high-side drive signal input pin HIN, the low-side drive signal input pin LIN, the common ground pin COM, the temperature output pin VTS, the high-side floating ground pin VS, and the DC positive terminal pin P are all low-voltage pins. The common ground pin COM, the high-side floating ground pin VS, and the DC positive terminal pin P all correspond to multiple pins, and the spacing between the multiple pins is set to 0.25mm-0.3mm, and is set to 0.25mm in this example. The spacing between the low voltage pin and the high voltage pin of the chip is not less than 1mm, including but not limited to 1.1mm, 1.2mm, 1.3mm, 1.4mm, 1.5mm. In this example, the low voltage pin closest to the high voltage pin (high side floating power pin VB) is the low side power pin VCC, and the spacing between the high side floating power pin VB and the low side power pin VCC is not less than 1mm. In this example, the low side power pin VCC, the high side drive signal input pin HIN, the low side drive signal input pin LIN, the common ground pin COM and the temperature output pin VTS are arranged on the first side close to the driver chip IC, the high side floating ground pin VS and the DC positive terminal pin P are arranged on the second side opposite to the first side, and the DC negative terminal pin PGND and the high side floating power pin VB are respectively arranged at positions that meet the design requirements; in actual use, the position of each pin can be set according to the specific position of the base island and the lead relationship (try not to wind or cross the wires), as long as the electrical requirements are met, and this embodiment is not limited thereto.

[0054] like Figure 3As shown, in the present embodiment, there is no lead-out electrode at the bottom of the driver chip IC, so the bottom of the driver chip IC is insulated from the first base island 21, and all methods that can fix the driver chip IC on the first base island 21 are applicable, including but not limited to silver paste patch. Since the base islands are too close to each other, in order to avoid the silver paste overflowing to the back of the first base island during silver paste patching to cause chip contamination and cause product appearance abnormality or short circuit, in the present example, the driver chip IC is attached to the first base island 21 through a non-conductive film (DAF); further, in order to avoid chip falling, the upper surface of the first base island 21 is silver-plated (when the common ground terminal COM of the driver chip IC is connected to the first base island 21 through a lead and then electrically connected to the common ground pin COM of the chip, the surface silver plating can make the driver chip IC and the common ground pin COM of the chip better electrically connected), and it is a rough surface, thereby reducing the chip falling rate of the driver chip IC and improving product reliability. In this embodiment, the distance from the driver chip IC to the boundary of the first base island 21 is set to be not less than 0.1mm, including but not limited to 0.13mm, 0.15mm, 0.16mm, 0.18mm, and 0.2mm. The low-side power supply terminal VCC of the driver chip IC is connected to the low-side power supply pin VCC of the chip through a lead wire, the high-side drive signal input terminal HIN is connected to the high-side drive signal input pin HIN of the chip through a lead wire, the low-side drive signal input terminal LIN is connected to the low-side drive signal input pin LIN of the chip through a lead wire, the common ground terminal COM is connected to the common ground pin COM of the chip through a lead wire, and the temperature output terminal VTS is connected to the temperature output pin VTS of the chip through a lead wire.

[0055] like Figure 3As shown, the bottom of the first power tube Q1 and the second power tube Q2 are provided with a drain lead electrode D, and the top is provided with a source lead electrode S and a gate lead electrode G. The drain of the first power tube Q1 is electrically connected to the second base island 22 through a conductive glue, and further electrically connected to the DC positive terminal pin P of the chip; the drain of the second power tube Q2 is electrically connected to the third base island 23 through a conductive glue, and further electrically connected to the high-side floating pin VS of the chip; any method that can electrically connect the bottom electrodes of the first power tube Q1 and the second power tube Q2 to the corresponding base island and fix the first power tube Q1 and the second power tube Q2 is applicable, and is not limited to this embodiment. In this embodiment, the distance from the first power tube Q1 to the boundary of the second base island 22 is set to 0.3mm-0.5mm, including but not limited to 0.31mm, 0.35mm, 0.4mm, 0.45mm, 0.47mm; the distance from the second power tube Q2 to the boundary of the third base island 23 is set to 0.2mm-0.3mm, including but not limited to 0.24mm, 0.25mm, 0.28mm, 0.29mm. The gate of the first power tube Q1 is connected to the high-side drive signal output terminal HO of the driver chip IC through a lead; the source of the first power tube Q1 is connected to the high-side floating ground terminal VS of the driver chip IC through a lead, and is also connected to the source of the second power tube Q2 or the high-side floating ground pin VS of the chip through a lead. The gate of the second power tube Q2 is connected to the low-side drive signal output terminal LO of the driver chip IC through a lead, and the source of the second power tube Q2 is connected to the DC negative terminal pin PGND of the chip through a lead.

[0056] Specifically, Figure 3 As shown, in this embodiment, the packaging structure 2 of the intelligent power module adopts the QFN packaging form, that is, each pin is bent to the bottom and there is no extension part. Finally, the size of the packaging structure 2 of the intelligent power module of the present invention can be less than 7mm*7mm, thereby meeting the use requirements of small household appliances; as an example, the size of the packaging structure 2 of the intelligent power module is set to 5mm*6mm to obtain a base island area that meets the heat dissipation requirements. If the size of the packaging structure 2 of the intelligent power module is further reduced, the heat dissipation effect may be affected. As an example, the packaging structure 2 of the intelligent power module of the present invention is a 500V~600V half-bridge power MOSFET.

[0057] The present invention also provides a driving circuit, which includes: two or three groups of packaging structures 2 of the intelligent power module of the present invention; two groups of half-bridge structures constitute a driving circuit of a full-bridge structure, and three groups of half-bridge structures constitute a driving circuit of a three-phase full-bridge structure, which are not described one by one here.

[0058] The present invention also provides an electronic product, which at least includes the packaging structure 2 of the intelligent power module of the present invention; it is applicable to any occasion requiring a half-bridge structure, and the electronic product includes but is not limited to small household appliances such as hair dryers, fans, and air purifiers, which are not described in detail here.

[0059] In the present invention, the QFN package size is further reduced, the internal structure is more compact and reasonable, and the undervoltage protection and temperature monitoring functions (based on the temperature output end of the driver chip) are integrated. The packaging structure of the intelligent power module of the present invention not only has a high power density, but also has excellent protection functions and heat dissipation performance as well as a small packaging appearance, so that it can better meet and be suitable for miniaturized household appliances with high requirements on space and heat dissipation capabilities.

[0060] In summary, the present invention provides a packaging structure, a driving circuit and an electronic product of an intelligent power module, comprising: a packaging body, a first base island, a second base island, a third base island, a driving chip, a first power tube and a second power tube arranged in the packaging body; the driving chip is arranged on the first base island, the first power tube is arranged on the second base island, and the second power tube is arranged on the third base island, the driving chip, the first power tube and the second power tube constitute a half-bridge driving structure, and each signal end is connected to a corresponding chip pin; wherein the first base island and the second base island are arranged on the same side of the third base island, and are arranged in sequence along the side of the third base island, the first base island and the third base island partially or completely overlap in projection on the side, and the second base island and the third base island partially or completely overlap in projection on the side. The packaging structure, driving circuit and electronic product of the intelligent power module of the present invention retain the original structure and pin function of the intelligent power module, and also greatly reduce the size of the module, with the advantages of small size, good heat dissipation and high power, suitable for realizing the design of its corresponding miniaturized circuit board, and can be applied to small household appliances such as electric fans and hair dryers. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0061] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A packaging structure of an intelligent power module, characterized in that: The packaging structure of the intelligent power module at least includes: A package body, a first base island, a second base island, a third base island, a driver chip, a first power tube and a second power tube arranged in the package body; The driving chip is arranged on the first base island, the first power tube is arranged on the second base island, and the second power tube is arranged on the third base island. The driving chip, the first power tube and the second power tube form a half-bridge driving structure, and each signal end is connected to a corresponding chip pin; Among them, the first base island and the second base island are arranged on the same side of the third base island, and are arranged in sequence along the side of the third base island, the projections of the first base island and the third base island on the side partially or completely overlap, and the projections of the second base island and the third base island on the side partially or completely overlap.

2. The packaging structure of the intelligent power module according to claim 1, characterized in that: The third base island is aligned with one end of the second base island, and the other end of the third base island is located at one side of the first base island.

3. The packaging structure of the intelligent power module according to claim 1 or 2, characterized in that: The spacing between the first base island, the second base island and the third base island is set to 0.15mm-0.2mm.

4. The packaging structure of the intelligent power module according to claim 1, characterized in that: The first power tube is an upper bridge arm power tube, and the second power tube is a lower bridge arm power tube; or the first power tube is a lower bridge arm power tube, and the second power tube is an upper bridge arm power tube; The power supply terminal, the driving signal input terminal, the common ground terminal and the protection terminal of the driving chip are respectively connected to the corresponding chip pins through leads; The drain at the bottom of the upper bridge arm power tube is electrically connected to the corresponding base island and the DC positive pin of the chip; the gate of the upper bridge arm power tube is connected to the high-side drive signal output end of the driver chip through a lead; the source of the upper bridge arm power tube is connected to the high-side floating end of the driver chip through a lead, and is also connected to the source of the lower bridge arm power tube or the high-side floating pin of the chip through a lead; The drain at the bottom of the lower bridge arm power tube is electrically connected to the corresponding base island and the high-side floating pin of the chip; the gate of the lower bridge arm power tube is connected to the low-side drive signal output end of the driving chip through a lead, and the source of the lower bridge arm power tube is connected to the DC negative pin of the chip through a lead.

5. The packaging structure of the intelligent power module according to claim 4, characterized in that: The first base island is electrically connected to a common ground pin of the chip.

6. The packaging structure of the intelligent power module according to claim 4, characterized in that: The power supply end of the driver chip includes a high-side floating power supply end and a low-side power supply end, the drive signal input end of the driver chip includes a high-side drive signal input end and a low-side drive signal input end, and the protection end of the driver chip is a temperature output end.

7. The packaging structure of the intelligent power module according to claim 1, characterized in that: The bottom of the driving chip is attached to the first base island through a non-conductive film.

8. The packaging structure of the intelligent power module according to claim 7, characterized in that: The upper surface of the first base island is plated with silver and has a rough surface.

9. The packaging structure of the intelligent power module according to claim 1, characterized in that: The spacing between the low-voltage pins of the chip is set to 0.25mm-0.3mm respectively; the spacing between the low-voltage pin and the high-voltage pin of the chip is not less than 1mm.

10. The packaging structure of the intelligent power module according to any one of claims 1 to 9, characterized in that: The packaging structure of the intelligent power module adopts the QFN packaging form.

11. The packaging structure of the intelligent power module according to claim 10, characterized in that: The size of the packaging structure of the intelligent power module is less than 7 mm*7 mm.

12. A driving circuit, characterized in that: The driving circuit includes: two or three groups of packaging structures of the intelligent power module according to any one of claims 1 to 11.

13. An electronic product, characterized in that: The electronic product at least comprises: a packaging structure of the intelligent power module according to any one of claims 1-11.

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