Transfer type low-temperature plasma material processing device

Abstract

The invention provides a transfer type low-temperature plasma material processing device, which comprises a plasma generating device, a material fixing and conveying device, an atmosphere supply device and a water cooling device, and is characterized in that the plasma generating device comprises a first high-voltage electrode tube and a second high-voltage electrode tube which are arranged at an interval; the two groups of high-voltage power supplies provide bipolar high-voltage electricity for the two high-voltage electrode tubes; the material fixing and conveying device and the plasma generating device can move relatively, when the electrode plates are far away from the plasma generating device, low-temperature plasmas are generated between the bipolar electrode assemblies, and when the electrode plates and the plasma generating device are distributed up and down, the low-temperature plasmas are transferred from the bipolar electrode assemblies to the surface of a to-be-treated material. The method is used for material surface treatment. The water cooling device is used for cooling the electrode tube, and the atmosphere supply device is used for providing atmosphere to generate directional free radicals. The device is simple in structure, uniform in plasma generation and transfer, low in treatment temperature and high in practicability, and a power supply does not need to be frequently turned on and off in the treatment process.

Description

Technical field:

[0001] The invention belongs to the technical field of low-temperature plasma material processing, and in particular relates to a transfer-type low-temperature plasma material processing device. Background technology:

[0002] As an important interactive input device, touch screens have been widely used in many fields. Compared with traditional rigid touch screens, flexible touch screens have higher flexibility, better drop resistance, lower power consumption and wider viewing angles. They have broad application prospects in smart phones, tablets, wearable devices and various new devices that may appear in the future. In the lamination process of flexible touch screens, PET materials are involved as an intermediate layer or protective layer, which can provide a certain degree of transparency and hardness support for the touch screen without affecting the display effect of the touch screen. At the same time, PET materials can also be used in combination with other materials to improve the overall performance and user experience of the touch screen.

[0003] In the production process of touch screens, the various layers of materials of the flexible touch screen need to be bonded together with optical glue to form a whole. The PET material will go through a series of treatments and bonding processes to ensure that it is tightly bonded to other components of the touch screen (such as the glass substrate, conductive layer, etc.). In this process, the PET material needs to be surface treated to improve the adhesion performance. The initial surface energy of PET material is relatively low. Currently, low-temperature plasma is usually used to modify the surface of the material to increase the surface energy of the material and enhance the bonding strength.

[0004] The various PET materials currently used are not pure PET. In order to meet the requirements of various touch screen performance, more and more functional composite PET materials have appeared, with lower surface energy and greater processing difficulty. The initial surface energy of conventional PET materials is about 40-44 dynes / cm, and the initial surface energy of composite PET materials is as low as 34 dynes / cm. In order to adapt to more stringent weather resistance, density and uniformity, the requirements to be achieved after treatment are higher, and the surface energy is usually required to be ≥50 dynes / cm to meet the bonding requirements. In addition, more and more processes have added test requirements for water drop contact angles, requiring that the water drop contact angles of various specifications must be <45°. In some bonding process requirements, PET material films cannot be processed in the form of rolls, but must be processed in the form of sheets after being cut by a circular knife machine. Since the sheets have no tensile tension, they are easily affected by temperature and warped during processing. In addition, the process is usually double-layer or multi-layer material, and the heat shrinkage of each layer is different, which is more sensitive to temperature. In addition, due to the constraints of the on-site production line, the PET sheet base must use a metal base, which has fine holes for adsorbing sheets and feeding and unloading materials. It must also adapt to the fixed base of the large panel. The size of the material to be processed is different from the size of the base. Therefore, when plasma treatment is used, the ideal dual-dielectric barrier uniform discharge structure cannot be achieved, and the uniformity and density of the processed material are greatly affected. On the one hand, the low-voltage base cannot always appear in the discharge low-voltage area, and the high-low voltage discharge structure is sometimes absent during the material transmission process, and it needs to be constantly switched on and off. The power is too large at the moment of starting, which greatly shortens the power life and the stability of the initial and final stages of the treatment. On the other hand, when the area of ​​the processed material is different, the area with material is similar to the dual-dielectric barrier discharge mode, which is a filamentary discharge and relatively uniform. The area without material belongs to the single dielectric barrier discharge mode, which is a streamer discharge, with thicker discharge filaments, and different areas of uniform discharge. The processing uniformity is poor and the parameters are difficult to control. Conventional coil and sheet DBD plasma modification equipment cannot meet the current demanding process requirements.

[0005] In order to solve the above problems, it is necessary to develop an efficient low-temperature plasma sheet processing device with better processing uniformity, no need to frequently turn the power on and off during the processing, low processing temperature, and less influence by single and double dielectrics. Summary of the invention:

[0006] The object of the present invention is to provide a transfer type low temperature plasma material processing device.

[0007] The present invention adopts the following technical solutions:

[0008] The invention provides a transfer type low temperature plasma material processing device, comprising a plasma generating device and a material fixing and conveying device; the plasma generating device is connected to a bipolar high voltage power supply system, comprising a bipolar electrode assembly, the bipolar electrode assembly comprising a first high voltage electrode tube and a second high voltage electrode tube arranged at intervals, the first power supply and the second power supply of the bipolar high voltage power supply system are respectively connected to the first high voltage electrode tube and the second high voltage electrode tube to provide bipolar high voltage electricity for the bipolar electrode assembly; the material fixing and conveying device and the plasma generating device can move relative to each other, the material fixing and conveying device comprises an electrode plate, and the material to be processed is loaded on a side of the electrode plate facing the plasma generating device; when the electrode plate is away from the plasma generating device, low temperature plasma is generated between the first high voltage electrode tube and the second high voltage electrode tube, and when the electrode plate and the plasma generating device are distributed up and down, the low temperature plasma is transferred from between the bipolar electrode assemblies to the surface of the material to be processed, and becomes plasma for material surface processing.

[0009] Furthermore, an atmosphere supply device is provided; the atmosphere supply device comprises a gas supply device and a plurality of gas pipelines; the gas inlet end of the gas pipeline is connected to the gas supply device, the gas outlet end corresponds to the position of the plasma generating device, and the outlet gas of the gas pipeline flows between the bipolar electrode assembly and the material fixing and conveying device.

[0010] Furthermore, a flow equalizer plate is provided; the flow equalizer plate is distributed between the gas pipeline and the bipolar electrode assembly, and a plurality of evenly distributed flow equalizer holes are provided on the flow equalizer plate.

[0011] Furthermore, the gas supply device includes a gas generator / gas cylinder, a pressure gauge, a flow meter, a solenoid valve, an air pipe and an air pipe joint; the gas generator / gas cylinder is connected to the gas pipeline through the air pipe and the air pipe joint; the pressure gauge, flow meter and solenoid valve are installed on the gas generator / gas cylinder.

[0012] Furthermore, a water cooling device is provided, which includes a water supply device, a water pipe and a circulating water pool; in the bipolar electrode assembly, the first high-voltage electrode tube and the second high-voltage electrode tube are installed in opposite directions, and water pipe joints are provided at both ends of the first high-voltage electrode tube and the second high-voltage electrode tube, and each group of first high-voltage electrode tubes and second high-voltage electrode tubes are connected in series end to end through the water pipe in sequence; the water supply device is connected to the high-voltage end of the first electrode tube, the circulating water pool is connected to the low-pressure end of the last electrode tube, and the circulating water pool is connected to the water supply device.

[0013] Furthermore, the water supply device includes a water pump and a deionized water machine; the water pump is connected to a circulating water pool, the water pump outlet is connected to the deionized water machine, and the pure water outlet of the deionized water machine is connected to the water pipe joint of the electrode tube; the circulating water pool is provided with a water level monitoring device and a temperature monitoring device, and the water is automatically replenished and drained by a tap water pipe.

[0014] Furthermore, a cover shell and an insulating frame are provided; the insulating frame is fixedly arranged inside the cover shell, and includes a top plate and two side support plates; the bipolar electrode assembly is fixed between the two groups of support plates; the flow equalizer plate is fixedly arranged between the two groups of support plates, and the flow equalizer plate is distributed between the gas pipeline and the bipolar electrode assembly.

[0015] Furthermore, a partition is fixedly arranged between the two groups of support plates, and the two ends of the partition are respectively fixedly connected to the two groups of support plates, and the partition is distributed above the flow equalizer plate; the partition is provided with through holes corresponding to the number and position of the gas pipelines, and the gas pipelines pass through the corresponding through holes and extend to the flow equalizer plate.

[0016] Furthermore, two sets of power supply mounting plates are fixedly provided on the side wall of the cover shell, on which the first power supply and the second power supply are fixedly installed respectively; the first power supply is connected to the high voltage end of the first high voltage electrode tube through the power-carrying copper sheet, and the second power supply is connected to the high voltage end of the second high voltage electrode tube through the power-carrying copper sheet.

[0017] Furthermore, the first high-voltage electrode tube and the second high-voltage electrode tube have the same structure, both comprising: a ceramic tube, a metal electrode, two groups of lined aluminum tubes, two groups of sealing gaskets, two groups of compression sleeves and two groups of sealing plugs; the metal electrode is arranged inside the ceramic tube, and the two groups of lined aluminum tubes are symmetrically fixed on both sides of the metal electrode; the sealing gasket and the compression sleeve are arranged between the lined aluminum tube and the ceramic tube, and the compression sleeve is distributed on the outside of the sealing gasket; the two groups of sealing plugs are respectively inserted into the two ends of the first high-voltage electrode tube / the second high-voltage electrode tube, and are compressed and fixed with the compression sleeve; the end of the lined aluminum tube away from the metal electrode passes through the sealing plug and is fixedly connected to the water pipe joint; the high-voltage end of the first high-voltage electrode tube / the second high-voltage electrode tube is provided with a high-voltage joint.

[0018] Beneficial effects of the present invention:

[0019] (1) In the present invention, the sheet conveying device and the plasma generating device can move relative to each other. The plasma generating device can be moved to different fixed conveying devices for the processed materials as needed to process and modify the processed materials attached to the electrode plate. The operation is convenient and the practicability is strong.

[0020] (2) In the present invention, the plasma generating device is a bipolar electrode assembly. When the material fixing and conveying device is away from the plasma generating device, discharge occurs between the first high-voltage electrode tube and the second high-voltage electrode tube. When the material fixing and conveying device and the plasma generating device are arranged up and down, low-temperature plasma is transferred from between the bipolar electrode assemblies to the surface of the material to be treated, and becomes a plasma for material surface treatment, and plasma treatment is performed on the surface of the product. When the electrode plate is removed, the low-temperature plasma is transferred back between the first high-voltage electrode tube and the second high-voltage electrode tube. Such a bipolar electrode discharge structure has the advantages of low unipolar high-voltage voltage, high bipolar high-voltage voltage, stable discharge, good treatment effect, etc., and does not require frequent switch start-up;

[0021] (3) The present invention is provided with a water cooling device, which can dissipate heat from the high-voltage electrode tube to avoid deformation of the treated material due to excessive temperature;

[0022] (4) The present invention is provided with a cover shell and an insulating frame, which provide support for the plasma generating device, the atmosphere supply device and the water cooling device, and has a compact structure and is easy to move. Description of the drawings:

[0023] Figure 1 It is a cross-sectional view of an embodiment of the present invention;

[0024] Figure 2 This is an internal distribution diagram of an embodiment of the present invention;

[0025] Figure 3 This is a cross-sectional view of a high voltage electrode tube according to an embodiment of the present invention;

[0026] Figure 4 This is a schematic diagram of the installation of a plasma generating device according to an embodiment of the present invention;

[0027] Figure 5 A bottom view of an embodiment of the present invention;

[0028] Figure 6 This is a comparison of the water drop contact angle of the material before and after treatment;

[0029] Figure 7 It is a schematic diagram of plasma when the material fixing conveying device carrying the material to be processed of the present invention has not reached below the bipolar electrode;

[0030] Figure 8 It is a schematic diagram of plasma when a portion of the material fixing conveying device carrying the material to be processed of the present invention reaches below the bipolar electrode;

[0031] Fig. 9 It is a schematic diagram of plasma when the material fixing conveying device carrying the material to be processed of the present invention completely reaches below the bipolar electrode;

[0032] Fig.10It is a schematic diagram of plasma when the material fixing conveying device carrying the material to be processed gradually leaves from under the bipolar electrode of the present invention;

[0033] The symbols in the accompanying drawings are:

[0034] 1. First high-voltage electrode tube; 2. Second high-voltage electrode tube; 3. First power supply; 4. Second power supply; 5. Gas pipeline; 6. Flow equalizer; 7. Cover; 8. Insulation frame; 9. Support plate; 10. Partition; 11. Ceramic tube; 12. Metal electrode; 13. Lined aluminum tube; 14. Sealing gasket; 15. Compression sleeve; 16. Sealing plug; 17. Water pipe joint; 18. High-voltage joint; 19. Material fixing and conveying device; 20. Material to be processed. Specific implementation method:

[0035] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0036] Example 1

[0037] Reference Figures 1 to 5 This embodiment provides a transfer-type low-temperature plasma material processing device, including a plasma generating device and a material fixing and conveying device.

[0038] The plasma generating device is connected to a bipolar high-voltage power supply system, including a bipolar electrode assembly, the bipolar electrode assembly including 6 groups of electrode tubes, including 3 groups of first high-voltage electrode tubes 1 and 3 groups of second high-voltage electrode tubes 2 (equidistantly distributed, with a spacing of 1 to 3 mm) arranged at intervals, and the first power supply 3 and the second power supply 4 of the bipolar high-voltage power supply system are respectively connected to the high-voltage connectors of the first high-voltage electrode tube 1 and the second high-voltage electrode tube 2 to provide bipolar high voltage electricity for the bipolar electrode assembly. The first power supply 3 and the second power supply 4 are respectively a positive high-voltage power supply and a negative high-voltage power supply.

[0039] The material fixing and conveying device is a mechanism for providing movement for the material to be processed and can move relative to the plasma generating device. The material fixing and conveying device comprises an electrode plate, and the material to be processed is loaded on a side of the electrode plate facing the plasma generating device.

[0040] When the electrode plate is away from the plasma generator, discharge occurs between the first high-voltage electrode tube 1 and the second high-voltage electrode tube 2; when the electrode plate and the plasma generator are arranged up and down, low-temperature plasma is transferred from between the bipolar electrode assemblies to the surface of the material to be treated, becoming plasma for material surface treatment, and plasma treatment is performed on the surface of the product; when the electrode plate is removed, the low-temperature plasma is transferred back between the first high-voltage electrode tube 1 and the second high-voltage electrode tube 2. Such a bipolar electrode discharge structure has the advantages of low unipolar high voltage, high bipolar high voltage, stable discharge, and good treatment effect.

[0041] In this embodiment, the material fixed conveyor can repeatedly and reliably move the material to be processed to the vicinity of the bipolar high-voltage electrode tube of the plasma generator at a certain speed and away from it, and in this process, the surface of the product is processed. Generally, the material fixed conveyor can use a linear track or a conveyor belt.

[0042] The principle of this device:

[0043] Figures 7-10 It represents the relative movement process between the plasma generating device and the material fixing and conveying device, and the arrow represents the moving direction of the material fixing and conveying device.

[0044] like Figure 7 As shown, when the material fixed conveyor (equivalent to 0 potential) carrying the material to be processed does not reach the bottom of the bipolar electrode, the plasma is only generated between the bipolar electrodes in parallel. In the figure, V1 and V2 are excitation electric fields with opposite phases, and at this moment the bipolar electrode impedance is equivalent to Z1.

[0045] like Figure 8 As shown, when the material fixed conveying device (equivalent to 0 potential) carrying the material to be processed gradually moves to the bottom of the bipolar electrode, the plasma gradually transfers from between the bipolar electrodes to the material, thereby achieving the purpose of processing the material.

[0046] like Fig. 9 As shown, when the material fixed conveyor device (equivalent to 0 potential) carrying the material to be processed completely reaches the bottom of the bipolar electrode, plasma is only generated between the bipolar electrode and the electrode plate of the material fixed conveyor device, and the surface of the material can be processed. In the figure, V1 and V2 are excitation electric fields with opposite phases. At this moment, the impedance of the bipolar electrode is equivalent to Z2. When |V1|=|V2|, Z2=Z1 / n, and n is the number of electrodes.

[0047] like Fig.10 As shown, when the material fixing conveyor (equivalent to 0 potential) carrying the material to be processed gradually leaves the area below the bipolar electrode, the plasma gradually transfers from between the bipolar electrode and the electrode plate of the material fixing conveyor back to between the bipolar electrodes.

[0048] Example 2

[0049] The main structure of this embodiment is the same as that of Embodiment 1, except that an atmosphere supply device is also provided in this embodiment.

[0050] Specifically, refer to Figures 1-2 The atmosphere supply device includes a gas supply device and 9 gas pipelines 5 with the same flow rate, and the 9 gas pipelines 5 are evenly distributed; the gas inlet end of the gas pipeline 5 is connected to the gas supply device, and the gas outlet end corresponds to the position of the plasma generating device, and the outlet flow of the gas pipeline 5 flows between the bipolar electrode assembly and the material fixing and conveying device.

[0051] In this embodiment, a flow equalizer plate 6 is further provided, and the flow equalizer plate 6 is distributed between the gas pipeline 5 and the bipolar electrode assembly, and a plurality of evenly distributed flow equalizer holes are provided on the flow equalizer plate 6. After the gas in the gas pipeline 5 passes through the flow equalizer plate 6 with densely distributed small holes, the input atmosphere becomes uniform and stable, so that the external input atmosphere is evenly distributed on the plane of the high-voltage motor tube and stably ejected.

[0052] In this embodiment, the gas supply device includes a nitrogen generator / nitrogen cylinder, a pressure gauge, a flow meter, a solenoid valve, a gas pipe and a gas pipe joint; the gas generator / gas cylinder is connected to the gas pipeline 5 through the gas pipe and the gas pipe joint; the pressure gauge, flow meter and solenoid valve are installed on the gas generator / gas cylinder. The gas source is connected to the gas pipeline 5 after passing through the pressure gauge, flow meter and solenoid valve, and finally flows between the bipolar electrode assembly and the material fixing and conveying device. The gas pressure is guaranteed to be 0.5-1.2MPa, and the flow rate is determined according to the actual electrode size. Assuming a width of 600mm, the flow rate needs to be 300-600L / min.

[0053] Example 3

[0054] The main structure of this embodiment is the same as that of Embodiment 2, except that a water cooling device is also provided in this embodiment.

[0055] Specifically, refer to Figures 1-2 The water cooling device includes a water supply device, a water pipe and a circulating water pool; in the bipolar electrode assembly, the first high-voltage electrode tube 1 and the second high-voltage electrode tube 2 are installed in opposite directions, and water pipe joints are respectively provided at both ends of the first high-voltage electrode tube 1 and the second high-voltage electrode tube 2. Each group of first high-voltage electrode tubes 1 and second high-voltage electrode tubes 2 are sequentially connected in series through the water pipe to form a series cooling water path; the water supply device is connected to the high-pressure end water inlet of the first electrode tube, the circulating water pool is connected to the low-pressure end water outlet of the last electrode tube, and the circulating water pool is connected to the water supply device.

[0056] In this embodiment, the water supply device includes a water pump and a deionized water machine. The water pump is connected to the circulating water pool, the water pump outlet is connected to the deionized water machine, and the pure water outlet of the deionized water machine is connected to the water inlet of the inner cooling pipe of the high-voltage electrode tube through a water pipe joint; the circulating water pool is equipped with a water level monitoring device and a temperature monitoring device, and the water is automatically replenished and drained by the tap water pipe. The system water temperature is controlled at <=55℃, and the water pool size and the specifications of the deionized water machine can be calculated according to indicators such as electrode size and power.

[0057] Example 4

[0058] The main structure of this embodiment is the same as that of Embodiment 3, except that a cover shell 7 and an insulating frame 8 are further provided in this embodiment.

[0059] Specifically, refer to Figures 1-2 and Figure 4 The insulating frame 8 is fixedly arranged inside the cover shell 7, including a top plate and support plates 9 on both sides; the bipolar electrode assembly is fixed between the two groups of support plates 9; the flow equalizer plate 6 is fixedly arranged between the two groups of support plates 9, and the flow equalizer plate 6 is distributed between the gas pipeline 5 and the bipolar electrode assembly.

[0060] In this embodiment, a partition 10 is fixedly arranged between the two groups of support plates 9, and the two ends of the partition 10 are respectively fixedly connected to the two groups of support plates 9, and the partition 10 is distributed above the flow equalizer plate 6. The partition 10 is provided with through holes corresponding to the number and position of the gas pipeline 5, and the gas pipeline 5 passes through the corresponding through holes and extends to the flow equalizer plate 6.

[0061] In this embodiment, two sets of power supply mounting plates are fixedly provided on the side wall of the cover shell 7, on which the first power supply 3 and the second power supply 4 are fixedly installed respectively. The first power supply 3 is connected to the high voltage end of the first high voltage electrode tube 1 through a powered copper sheet, and the second power supply 4 is connected to the high voltage end of the second high voltage electrode tube 2 through a powered copper sheet.

[0062] Example 5

[0063] The main structure of this embodiment is the same as that of Embodiment 4, except that: this embodiment limits the structures of the first high-voltage electrode tube 1 and the second high-voltage electrode tube 2 .

[0064] Specifically, refer to Figure 3 The first high-voltage electrode tube 1 and the second high-voltage electrode tube 2 have the same structure, and both include: a ceramic tube 11 (outer diameter 25 mm), a metal electrode 12 (stainless steel spring), two groups of lined aluminum tubes 13, two groups of sealing gaskets 14, two groups of compression sleeves 15 and two groups of sealing plugs 16.

[0065] The metal electrode 12 is arranged inside the ceramic tube 11, and two groups of lined aluminum tubes 13 are symmetrically fixed on both sides of the metal electrode 12; the sealing gasket 14 and the compression sleeve 15 are arranged between the lined aluminum tube 13 and the ceramic tube 11, and the compression sleeve 15 is distributed on the outside of the sealing gasket 14; the two groups of sealing plugs 16 are respectively inserted into the two ends of the first high-voltage electrode tube 1 / the second high-voltage electrode tube 2, and are compressed and fixed with the compression sleeve 15; the end of the lined aluminum tube 13 away from the metal electrode 12 passes through the sealing plug 16 and is fixedly connected to the water pipe joint 17; a high-voltage joint 18 is arranged at the sealing plug 16 at the high-voltage end of the first high-voltage electrode tube 1 / the second high-voltage electrode tube 2. Therefore, on the one hand, the entire high-voltage electrode tube can be connected to high voltage at the high-voltage end to provide high voltage electricity to the metal electrode in the ceramic tube; on the other hand, water pipes can be connected to the sealing plugs at both ends to form a water path with one inlet and one outlet for cooling water.

[0066] The length of the high-voltage electrode tube is determined by the width of the product to be processed, and the length of the metal electrode needs to be about 20 mm greater than the width of the product to be processed. When several high-voltage electrode tubes are arranged side by side with equal spacing and opposite directions, the water inlet and outlet of each electrode are also connected end to end with a hose to form a cooling water path connected in series by the high-voltage electrodes.

[0067] The application programs of this device are:

[0068] The water cooling device is turned on in advance to provide cooling water to the high-voltage electrode tube, and then the discharge atmosphere is input to the plasma reaction device. The airflow is evenly ejected from the gaps between the parallel high-voltage electrode tubes to form a discharge atmosphere. At this time, the bipolar high-voltage power supply system inputs bipolar high-voltage energy to the plasma reaction device, and a stable plasma discharge phenomenon is generated between the high-voltage electrode tubes of different polarities in the bipolar electrode assembly. At the same time, the input atmosphere forms directional free radicals at the same time.

[0069] When the material fixing and conveying device moves the material to be processed to the vicinity of the high-voltage electrode tube, the plasma between the high-voltage electrode tubes is transferred to the nearby surface of the material to be processed, thereby performing process gas plasma treatment on the surface of the material to be processed.

[0070] When the material holding conveyor removes the material to be processed, the plasma is transferred back between the high-voltage electrode tubes.

[0071] In automatic mode, repeat the above steps in sequence. If water flow, air pressure or air flow is abnormal, there will be an alarm prompt. One-key shutdown will first turn off the power, then the air, and finally the water.

[0072] After testing, the device was used to process PET functional film, with a power supply voltage of 380V, a working current controlled at ≤5.0A, a processing speed of 2-5m / min, a processing temperature of <45°C, and distilled water was used to detect the water drop contact angle. Figure 6 As shown, the water drop contact angle of the treated PET functional film is less than 45°, which meets the processing requirements of the PET functional film.

[0073] The above are only preferred implementations of the present invention. The protection scope of the present invention is not limited to the above embodiments. All technical solutions under the concept of the present invention belong to the protection scope of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications without departing from the principle of the present invention should be regarded as the protection scope of the present invention.

Claims

1. A transfer type low temperature plasma material processing device, characterized in that: It includes a plasma generating device and a material fixing and conveying device; The plasma generating device is connected to a bipolar high-voltage power supply system, and comprises a bipolar electrode assembly, wherein the bipolar electrode assembly comprises a first high-voltage electrode tube (1) and a second high-voltage electrode tube (2) arranged at intervals, and a first power supply (3) and a second power supply (4) of the bipolar high-voltage power supply system are respectively connected to the first high-voltage electrode tube (1) and the second high-voltage electrode tube (2) to provide bipolar high-voltage electricity for the bipolar electrode assembly; The material fixing and conveying device and the plasma generating device are capable of relative movement, the material fixing and conveying device comprises an electrode plate, and the material to be processed is loaded on a side of the electrode plate facing the plasma generating device; When the electrode plate is away from the plasma generating device, low-temperature plasma is generated between the first high-voltage electrode tube (1) and the second high-voltage electrode tube (2); when the electrode plate and the plasma generating device are arranged up and down, the low-temperature plasma is transferred from between the bipolar electrode assemblies to the surface of the material to be processed, and becomes plasma used for material surface processing.

2. The transfer type low temperature plasma material processing device according to claim 1, characterized in that: An atmosphere supply device is also provided; The atmosphere supply device comprises an air supply device and a plurality of groups of gas delivery pipelines (5); The air inlet end of the air delivery pipeline (5) is connected to the air supply device, and the air outlet end corresponds to the position of the plasma generating device. The outlet gas of the air delivery pipeline (5) flows between the bipolar electrode assembly and the material fixing and conveying device.

3. The transfer type low temperature plasma material processing device according to claim 2, characterized in that: A flow equalizer plate (6) is also provided; The flow equalizing plate (6) is distributed between the gas transmission pipeline (5) and the bipolar electrode assembly, and a plurality of evenly distributed flow equalizing holes are provided on the flow equalizing plate (6).

4. The transfer type low temperature plasma material processing device according to claim 2, characterized in that: The gas supply device includes a gas generator / gas cylinder, a pressure gauge, a flow meter, a solenoid valve, a gas pipe and a gas pipe joint; The gas generator / gas cylinder is connected to the gas pipeline (5) via a gas pipe and a gas pipe joint; The pressure gauge, flow meter and solenoid valve are installed on the gas generator / gas cylinder.

5. The transfer type low temperature plasma material processing device according to claim 1, characterized in that: A water cooling device is also provided, and the water cooling device includes a water supply device, a water delivery pipe and a circulating water pool; In the bipolar electrode assembly, the first high-voltage electrode tube (1) and the second high-voltage electrode tube (2) are installed in opposite directions, and water pipe joints are respectively provided at both ends of the first high-voltage electrode tube (1) and the second high-voltage electrode tube (2), and each group of the first high-voltage electrode tube (1) and the second high-voltage electrode tube (2) are sequentially connected in series end to end through a water pipe; The water supply device is connected to the high-pressure end of the first electrode tube, the circulating water pool is connected to the low-pressure end of the last electrode tube, and the circulating water pool is connected to the water supply device.

6. The transfer type low temperature plasma material processing device according to claim 5, characterized in that: The water supply device includes a water pump and a deionized water machine; The water pump is connected to the circulating water pool, the water pump outlet is connected to the deionized water machine, and the pure water outlet of the deionized water machine is connected to the water pipe joint of the electrode tube; The circulating water pool is provided with water level monitoring equipment and temperature monitoring equipment, and is automatically filled and drained by a tap water pipe.

7. The transfer type low temperature plasma material processing device according to claim 3, characterized in that: A cover shell (7) and an insulating frame (8) are also provided; The insulating frame (8) is fixedly arranged inside the housing (7), and comprises a top plate and two side support plates (9); the bipolar electrode assembly is fixed between the two groups of support plates (9); The flow equalizer plate (6) is fixedly arranged between the two groups of support plates (9), and the flow equalizer plate (6) is distributed between the gas transmission pipeline (5) and the bipolar electrode assembly.

8. The transfer type low temperature plasma material processing device according to claim 7, characterized in that: A partition plate (10) is fixedly arranged between the two groups of support plates (9), the two ends of the partition plate (10) are respectively fixedly connected to the two groups of support plates (9), and the partition plate (10) is distributed above the flow equalizing plate (6); The partition plate (10) is provided with through holes corresponding in number and position to the gas pipeline (5), and the gas pipeline (5) passes through the corresponding through holes and extends to the flow equalizer plate (6).

9. The transfer type low temperature plasma material processing device according to claim 7, characterized in that: Two sets of power supply mounting plates are fixedly arranged on the side wall of the housing (7), and are respectively fixedly mounted with a first power supply (3) and a second power supply (4); the first power supply (3) is connected to the high voltage end of the first high voltage electrode tube (1) via a current-carrying copper sheet, and the second power supply (4) is connected to the high voltage end of the second high voltage electrode tube (2) via a current-carrying copper sheet.

10. The transfer type low temperature plasma material processing device according to claim 1, characterized in that: The first high-voltage electrode tube (1) and the second high-voltage electrode tube (2) have the same structure, and both comprise: a ceramic tube (11), a metal electrode (12), two groups of lined aluminum tubes (13), two groups of sealing gaskets (14), two groups of compression sleeves (15), and two groups of sealing plugs (16); The metal electrode (12) is arranged inside the ceramic tube (11), and two groups of inner-lined aluminum tubes (13) are symmetrically fixed on both sides of the metal electrode (12); the sealing gasket (14) and the compression sleeve (15) are arranged between the inner-lined aluminum tube (13) and the ceramic tube (11), and the compression sleeve (15) is distributed outside the sealing gasket (14); the two groups of sealing plugs (16) are respectively inserted into the two ends of the first high-voltage electrode tube (1) / the second high-voltage electrode tube (2), and are compressed and fixed with the compression sleeve (15); One end of the lined aluminum tube (13) away from the metal electrode (12) passes through a sealing plug (16) and is fixedly connected to a water pipe joint (17); a high-voltage joint (18) is provided at the high-voltage end of the first high-voltage electrode tube (1) / the second high-voltage electrode tube (2).

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