Wafer lifting mechanism, processing device and method of semiconductor device, and storage medium

Abstract

The invention provides a wafer lifting mechanism, a processing apparatus and a processing method of a semiconductor device, and a storage medium. The wafer lifting mechanism comprises a supporting seat, a plurality of ejector rods and a controller. The supporting seat is arranged below the heating disc, and a plurality of supporting pieces are arranged on the supporting seat. And a plurality of transverse voltage-controlled drivers arranged in the horizontal direction are arranged in the supporting piece. The first ends of the ejector rods upwards penetrate through the ejector rod through holes of the heating disc and are limited above the heating disc by the protruding parts located at the first ends, and the second ends of the ejector rods are located below the heating disc and are aligned with the corresponding supporting pieces. The controller is configured to determine the transverse offset of the wafer and the heating disc; lifting the supporting seat to enable each supporting piece to be respectively in contact with the second end of the corresponding ejector rod, and supporting and driving the wafer to ascend through the first end of the supporting piece; and adjusting the driving voltage of the transverse voltage-controlled driver in the corresponding direction according to the transverse offset so as to perform centering adjustment of the wafer and the heating disc.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and in particular to a wafer lifting mechanism, a semiconductor device processing device, a semiconductor device processing method, and a computer-readable storage medium. Background Art

[0002] During the semiconductor manufacturing process, the wafer needs to be precisely docked with the heating plate to ensure the stability and efficiency of the process. However, in actual operation, due to manufacturing errors in semiconductor processing equipment, deformation of the wafer, and possible slight unevenness on the surface of the heating plate, the placement of the wafer on the heating plate often occurs eccentricity, resulting in uneven contact between the wafer and the heating plate, thus affecting the effect of the processing and the quality of the product. In traditional semiconductor processing equipment, the wafer is usually supported and positioned by fixed lifting pins. However, the support method of fixed lifting pins cannot effectively compensate for the slight position deviation of the wafer on the heating plate caused by eccentricity or uneven force.

[0003] In order to overcome the above-mentioned defects in the prior art, there is an urgent need in the art for an improved wafer lifting mechanism for performing centering adjustment between the wafer and the heating plate to improve the efficiency and accuracy of the semiconductor device processing technology. Summary of the invention

[0004] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0005] In order to overcome the above-mentioned defects in the prior art, the present invention provides a wafer lifting mechanism, a semiconductor device processing device, a semiconductor device processing method and a computer-readable storage medium, which can be used to adjust the centering of the wafer and the heating plate by setting an automatic return pin and a lateral pressure-controlled driver for steppingly adjusting the wafer position, so as to improve the efficiency and accuracy of the semiconductor device processing technology.

[0006] Specifically, the wafer lifting mechanism provided according to the first aspect of the present invention includes a support seat, a plurality of push rods and a controller. The support seat is arranged below the heating plate, and a plurality of support members are arranged thereon. The support member is provided with a transverse pressure-controlled driver arranged along a plurality of horizontal directions. The first ends of the plurality of push rods pass upward through the push rod through holes of the heating plate, and are limited to be located above the heating plate by the raised portion located at the first end, while the second ends thereof are located below the heating plate and aligned with the corresponding support members. The controller is configured to: determine the transverse offset between the wafer and the heating plate; lift the support seat so that each of the support members contacts the second end of the corresponding push rod respectively, and supports and drives the wafer to rise via its first end; and adjust the driving voltage of the transverse pressure-controlled driver in the corresponding direction according to the transverse offset, so as to adjust the centering of the wafer and the heating plate.

[0007] Further, in some embodiments of the present invention, the lateral voltage-controlled driver includes a first deformation layer, a second deformation layer and an insulating layer. The first deformation layer is arranged along a preset X direction, and is used to deform along the X direction according to the first driving voltage received. The second deformation layer is arranged along a preset Y direction, and is used to deform along the Y direction according to the second driving voltage received. The insulating layer is arranged between the first deformation layer and the second deformation layer to isolate the first driving voltage from the second driving voltage.

[0008] Furthermore, in some embodiments of the present invention, the support member further includes a support rod and a support head. The support rod is connected to the support seat and lifts the lateral pressure-controlled driver to a preset height. The support head is installed on the support rod via the lateral pressure-controlled driver to contact and support the corresponding push rod. A limiting hole is provided on the support head for inserting the second end of the push rod to prevent the push rod from lateral displacement relative to the support head.

[0009] Further, in some embodiments of the present invention, the step of adjusting the driving voltage of the lateral voltage-controlled driver in the corresponding direction according to the lateral offset to perform centering adjustment between the wafer and the heating disk includes: splitting the lateral offset to obtain a first lateral displacement component along the X direction and a second lateral displacement component along the Y direction; determining a corresponding first driving voltage and a corresponding second driving voltage according to the first lateral displacement component and the second lateral displacement component, respectively; and providing the first driving voltage to the first deformation layer and providing the second driving voltage to the second deformation layer to perform centering adjustment between the wafer and the heating disk.

[0010] Further, in some embodiments of the present invention, the inner wall of each of the ejector pin through holes maintains an adjustment gap with the corresponding ejector pin. The step of adjusting the drive voltage of the lateral voltage-controlled driver in the corresponding direction according to the lateral offset to adjust the centering of the wafer and the heating plate includes: comparing the lateral offset with the adjustment gap; in response to the lateral offset being less than the adjustment gap, determining the drive voltage of the lateral voltage-controlled driver in the corresponding direction according to the lateral offset; and in response to the lateral offset being greater than or equal to the adjustment gap, determining the drive voltage of the lateral voltage-controlled driver in the corresponding direction according to the adjustment gap.

[0011] Furthermore, in some embodiments of the present invention, the controller is also configured to: after performing the centering adjustment between the wafer and the heating plate, lower the support seat so that each of the support members is separated from the second end of the corresponding push rod, and each of the push rods falls back to place the wafer back on the upper surface of the heating plate.

[0012] Furthermore, in some embodiments of the present invention, the upper end of each of the ejector pin vias is configured as an inwardly recessed slope structure, and / or the lower end of each of the protruding portions is configured as an inwardly protruding slope structure, so as to achieve automatic alignment with the corresponding ejector pin via after each of the ejector pins falls back. The step of adjusting the driving voltage of the lateral voltage-controlled driver in the corresponding direction according to the lateral offset to adjust the centering of the wafer and the heating plate also includes: in response to the lowering of the support seat, determining the lateral offset of the wafer and the heating plate again; and in response to the lateral offset being greater than a preset error threshold, lifting the support seat again and adjusting the driving voltage of the lateral voltage-controlled driver in the corresponding direction to adjust the centering of the wafer and the heating plate.

[0013] In addition, the processing device of the semiconductor device provided in the second aspect of the present invention comprises a process chamber and a wafer lifting mechanism as provided in the first aspect of the present invention. The process chamber is provided with a heating plate for carrying and heating a wafer to perform a processing process on it. The wafer lifting mechanism is used to lift the wafer and perform centering adjustment between the wafer and the heating plate.

[0014] In addition, the processing method of the above-mentioned semiconductor device provided according to the third aspect of the present invention includes the following steps: lifting the support seat of the wafer lifting mechanism provided by the first aspect of the present invention, contacting and supporting the second ends of multiple push rods through its multiple support members, so as to obtain the wafer to be processed through the first ends of the multiple push rods; determining the lateral offset between the wafer and the heating plate; according to the lateral offset, adjusting the driving voltage of the lateral voltage-controlled driver of the multiple support members in the corresponding direction to perform the centering adjustment of the wafer and the heating plate; in response to the completion of the centering adjustment, lowering the support seat to make each of the support members detach from the second end of the corresponding push rod, and make each of the push rods fall back to place the wafer back on the upper surface of the heating plate; and heating the wafer via the heating plate to process it.

[0015] Further, in some embodiments of the present invention, the step of adjusting the driving voltage of the lateral voltage-controlled drivers of the multiple supports in corresponding directions according to the lateral offset to perform alignment adjustment of the wafer and the heating plate includes: comparing the lateral offset with the adjustment gap; and in response to the lateral offset being smaller than the adjustment gap, determining the driving voltage of the lateral voltage-controlled driver in the corresponding direction according to the lateral offset.

[0016] Further, in some embodiments of the present invention, the step of adjusting the driving voltage of the lateral voltage-controlled drivers of the multiple support members in the corresponding direction according to the lateral offset to perform the centering adjustment of the wafer and the heating disk also includes: in response to the lateral offset being greater than or equal to the adjustment gap, determining the driving voltage of the lateral voltage-controlled driver in the corresponding direction according to the adjustment gap to perform the first step of centering adjustment of the wafer and the heating disk; in response to completion of the first step of centering adjustment, lowering the support seat to disengage each of the support members from the second end of the corresponding push rod, and causing each of the push rods to fall back to place the wafer back on the upper surface of the heating disk, and realizing automatic centering of each of the push rods and the corresponding push rod vias via the ramp structure; determining the lateral offset of the wafer and the heating disk again; and in response to the lateral offset being greater than a preset error threshold, lifting the support seat again and adjusting the driving voltage of the lateral voltage-controlled driver in the corresponding direction to perform the second step of centering adjustment of the wafer and the heating disk.

[0017] In addition, the computer-readable storage medium provided in the fourth aspect of the present invention stores computer instructions, which, when executed by a processor, implement the method for processing a semiconductor device provided in the third aspect of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0019] Figure 1 A schematic structural diagram of a wafer lifting mechanism provided according to some embodiments of the present invention is shown.

[0020] Figure 2 A cross-sectional schematic diagram of a wafer lifting mechanism provided according to some embodiments of the present invention is shown.

[0021] Figure 3 A schematic structural diagram of a sensor on a support base provided according to some embodiments of the present invention is shown.

[0022] Figure 4 A schematic cross-sectional view of a support rod provided according to some embodiments of the present invention is shown.

[0023] Figure 5 A schematic structural diagram of a lateral voltage-controlled driver provided according to some embodiments of the present invention is shown.

[0024] Figure 6 A schematic cross-sectional view of a support rod provided according to some embodiments of the present invention is shown.

[0025] Figure 7 A schematic flow chart of a method for processing a semiconductor device according to some embodiments of the present invention is shown.

[0026] Figure 8 A schematic diagram showing the offset between a wafer and a heating plate provided according to some embodiments of the present invention is shown.

[0027] Fig. 9 A schematic diagram showing the lateral offset between the center of a wafer and the center of a heating plate provided according to some embodiments of the present invention is shown.

[0028] Fig.10 A schematic flow chart of a wafer leveling method provided according to some embodiments of the present invention is shown.

[0029] Fig.11 A schematic diagram showing the spatial coordinates of a wafer lifting structure provided according to some embodiments of the present invention is shown.

[0030] Fig.12 A schematic diagram of the plane coordinates of a wafer lifting structure provided according to some embodiments of the present invention is shown.

[0031] Fig.13A schematic diagram of wafer leveling according to some embodiments of the present invention is shown. DETAILED DESCRIPTION

[0032] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0033] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0034] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0035] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0036] As mentioned above, in actual operation, due to manufacturing errors of semiconductor processing equipment, deformation of the wafer, and possible slight unevenness on the surface of the heating plate, the placement of the wafer on the heating plate often causes eccentricity, resulting in uneven contact between the wafer and the heating plate, thus affecting the effect of the processing and the quality of the product. In traditional semiconductor processing equipment, the wafer is usually supported and positioned by fixed lifting pins. However, the support method of fixed lifting pins cannot effectively compensate for the slight position deviation of the wafer on the heating plate caused by eccentricity or uneven force.

[0037] In order to overcome the above-mentioned defects in the prior art, the present invention provides a wafer lifting mechanism, a semiconductor device processing device, a semiconductor device processing method and a computer-readable storage medium, which can be used to adjust the centering of the wafer and the heating plate by setting an automatic return pin and a lateral pressure-controlled driver for steppingly adjusting the wafer position, so as to improve the efficiency and accuracy of the semiconductor device processing technology.

[0038] In some non-limiting embodiments, the wafer lifting mechanism provided in the first aspect of the present invention can be configured in the processing device of the semiconductor device provided in the second aspect of the present invention for implementation. Specifically, the processing device of the semiconductor device provided in the second aspect of the present invention includes a process chamber and the wafer lifting mechanism provided in the first aspect of the present invention. Here, a heating plate is configured in the process chamber for carrying and heating the wafer to perform a processing process on it. The wafer lifting mechanism is used to lift the wafer and perform centering adjustment between the wafer and the heating plate.

[0039] Please refer to the reference for details Figure 1 to Figure 3 . Figure 1 A schematic structural diagram of a wafer lifting mechanism provided according to some embodiments of the present invention is shown. Figure 2 A cross-sectional schematic diagram of a wafer lifting mechanism provided according to some embodiments of the present invention is shown. Figure 3 A schematic structural diagram of a sensor on a support base provided according to some embodiments of the present invention is shown.

[0040] exist Figure 1 and Figure 2 In the illustrated embodiment, the wafer lifting mechanism provided by the first aspect of the present invention includes a support seat 11 and a plurality of push rods 12. Here, the support seat 11 is arranged below the heating plate 13, and a plurality of support members 111 are arranged thereon. Here, a lateral pressure-controlled driver 112 arranged along a plurality of horizontal directions is arranged in the support member 111. The first ends of the plurality of push rods 12 pass upward through the push rod through holes of the heating plate 13, and are limited above the heating plate 13 by the raised portion at the first end, while the second ends thereof are located below the heating plate 13 and aligned with the corresponding support members 111.

[0041] Please refer to the following for further reference Figure 4 and Figure 5 . Figure 4 A schematic cross-sectional view of a support rod provided according to some embodiments of the present invention is shown. Figure 5 A schematic structural diagram of a lateral voltage-controlled driver provided according to some embodiments of the present invention is shown.

[0042] exist Figure 4 and Figure 5 In the illustrated embodiment, the lateral voltage-controlled driver 112 includes a first deformable layer 51, a second deformable layer 52, and an insulating layer 53. Here, the first deformable layer 51 is arranged along a preset X direction, and is used to deform along the X direction according to the first driving voltage received. The second deformable layer 52 is arranged along a preset Y direction, and is used to deform along the Y direction according to the second driving voltage received. The insulating layer 53 is arranged between the first deformable layer 51 and the second deformable layer 52 to isolate the first driving voltage from the second driving voltage.

[0043] Those skilled in the art will understand that Figure 5 The embodiments shown in which the first deformation layer 51 and the second deformation layer 52 are respectively arranged along the preset X direction and the preset Y direction are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, but are not intended to limit the scope of protection of the present invention.

[0044] Optionally, in other embodiments, those skilled in the art may further provide deformation layers along three directions with an angle of 120° in the lateral voltage-controlled driver 112 to enable the lateral voltage-controlled driver 112 to deform along three directions with an angle of 120°.

[0045] Please continue to refer to Figure 2 , Figure 3 and Figure 6 . Figure 6 A schematic cross-sectional view of a support rod provided according to some embodiments of the present invention is shown.

[0046] exist Figure 2 , Figure 3 and Figure 6 In the illustrated embodiment, the support member 111 further includes a support rod and a support head. The support rod is connected to the support seat 11 and lifts the transverse pressure-controlled driver 112 to a preset height. The support head is installed on the support rod via the transverse pressure-controlled driver 112 to contact and support the corresponding ejector rod, wherein a limiting hole is provided on the support head for inserting the second end of the ejector rod 12 to prevent the ejector rod 12 from lateral displacement relative to the support head.

[0047] Further, in Figure 6In the illustrated embodiment, the inner wall of each ejector pin through hole maintains an adjustment gap with the corresponding ejector pin 12. Here, the upper end of each ejector pin through hole is configured as an inwardly concave slope structure, and / or the lower end of each protrusion is configured as an inwardly protruding slope structure, so as to achieve automatic centering between each ejector pin and the corresponding ejector pin through hole after each ejector pin falls back.

[0048] In this way, the wafer lifting mechanism provided in the first aspect of the present invention can achieve a wide range of wafer centering adjustment while avoiding radial shaking of the push rod caused by excessive gaps by setting an automatically returning push rod and a lateral pressure-controlled driver 112 for step-by-step adjustment of the position of the wafer 14.

[0049] In addition, in some preferred embodiments, at least three sensors are provided on the support base 11. The second ends of the at least three push rods 12 are located below the heating plate 13, and contact the corresponding sensors when the support base 11 rises, so as to support and drive the wafer 14 to rise via the first ends under the drive of the support base 11.

[0050] In addition, in some non-limiting embodiments, the wafer lifting mechanism provided in the first aspect of the present invention includes a memory and a controller. Here, the memory includes but is not limited to the computer-readable storage medium provided in the fourth aspect, on which computer instructions are stored. The controller is connected to the memory and is configured to execute the computer instructions stored in the memory to implement the semiconductor device processing method provided in the third aspect of the present invention.

[0051] The working principle of the above-mentioned wafer lifting mechanism will be described below in conjunction with some embodiments of the processing methods of semiconductor devices. Those skilled in the art will understand that the embodiments of the processing methods of these semiconductor devices are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than limiting all functions or all working modes of the wafer lifting mechanism. Similarly, the wafer lifting mechanism is also only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on the execution subject and execution order of each step in the processing methods of these semiconductor devices.

[0052] Please refer to Figure 7 to Figure 9 . Figure 7 A schematic flow chart of a method for processing a semiconductor device according to some embodiments of the present invention is shown. Figure 8 A schematic diagram showing the offset between a wafer and a heating plate provided according to some embodiments of the present invention is shown. Fig. 9 A schematic diagram showing the lateral offset between the center of a wafer and the center of a heating plate provided according to some embodiments of the present invention is shown.

[0053] like Figure 7As shown, the controller can first lift the support base 11 of the above-mentioned wafer lifting mechanism provided in the first aspect of the present invention, and contact and support the second ends of the multiple ejector rods 12 through its multiple support members 111 to obtain the wafer 14 to be processed through the first ends of the multiple ejector rods 12.

[0054] Afterwards, if Figure 8 and Fig. 9 As shown, the controller can determine the lateral offset between the wafer 14 and the heating plate 13.

[0055] Thereafter, the controller may adjust the driving voltage of the lateral voltage-controlled drivers 112 of the plurality of support members 111 in the corresponding direction according to the lateral offset, so as to adjust the centering of the wafer 14 and the heating plate 13 .

[0056] Specifically, the controller may first compare the lateral offset with the size of the adjustment gap between the inner wall of each push rod through hole and the corresponding push rod. Then, in response to the lateral offset being smaller than the adjustment gap, the controller may determine the driving voltage of the lateral voltage-controlled driver in the corresponding direction according to the lateral offset.

[0057] In this way, the wafer lifting mechanism provided in the first aspect of the present invention can complete the centering adjustment of the wafer 14 and the heating plate 13 through a single lateral offset when the lateral offset is small.

[0058] Thereafter, in response to the lateral offset being greater than or equal to the adjustment gap, the controller may determine the driving voltage of the lateral voltage-controlled driver in the corresponding direction according to the adjustment gap to perform the first step of centering adjustment between the wafer and the heating plate.

[0059] Afterwards, in response to completing the first step of centering adjustment, the controller can lower the support seat to disengage each support member from the second end of the corresponding push rod, and make each push rod fall back to place the wafer back on the upper surface of the heating plate, and realize automatic centering of each push rod and the corresponding push rod through hole through the ramp structure.

[0060] Thereafter, in response to the lowering of the support base, the controller may again determine the lateral offset between the wafer and the heating plate.

[0061] Thereafter, in response to the lateral offset being greater than a preset error threshold, the controller may lift the support base again and adjust the driving voltage of the lateral voltage-controlled driver in the corresponding direction to perform a second step of centering adjustment between the wafer and the heating plate.

[0062] This cycle is repeated until the lateral offset is less than or equal to the error threshold specified by the processing technology. In this way, the wafer lifting mechanism provided by the first aspect of the present invention can complete the centering adjustment of the wafer 14 and the heating plate 13 through multiple lateral offsets when the lateral offset is large.

[0063] Thereafter, in response to the completion of the centering adjustment, the controller may lower the support seat 11 to disengage each support member 111 from the second end of the corresponding ejector pin 12 , and to cause each ejector pin 12 to fall back to place the wafer 14 back onto the upper surface of the heating plate 13 .

[0064] Thereafter, the controller may heat the wafer 14 via the heating plate 13 to process it.

[0065] In addition, in some preferred embodiments, the above-mentioned wafer lifting mechanism provided by the first aspect of the present invention can record the time when each sensor contacts the corresponding push rod 12, and combined with the rising speed of the support base 11, it can be used to control the lifting and lowering of the wafer 14 in real time and accurately level the wafer 14, so as to improve the efficiency and accuracy of the semiconductor device processing technology.

[0066] Please refer to Fig.10 . Fig.10 A schematic flow chart of a wafer leveling method provided according to some embodiments of the present invention is shown.

[0067] like Fig.10 As shown, during the rising process of the support base 11 of the wafer lifting mechanism provided by the first aspect of the present invention, the controller can record the time when at least three sensors thereon contact the corresponding ejector pins 12. Afterwards, the controller can determine the height of each sensor according to the time when each sensor contacts the corresponding ejector pin 12 and the rising speed of the support base 11.

[0068] Specifically, the controller may first record the first moment T1 when the support base 11 starts to rise from an initial position where it does not contact the push rods 12 .

[0069] Afterwards, the controller can drive the support base 11 to rise at a constant speed v.

[0070] Afterwards, in response to any sensor contacting the corresponding ejector rod 12, the controller may record the corresponding second moment T2 and determine the time t2 at which the sensor i contacts the corresponding ejector rod 12. i =T2-T1.

[0071] After that, the controller can calculate the time t of each sensor i contacting the corresponding push rod. i , and the speed v of the support base 11 rising, determine the height z of each sensor i i =H–v×t i Here, H is the distance from the initial position to the second end of each push rod 12.

[0072] Thereafter, the controller may level the wafer 14 and the heating plate 13 according to the heights of the sensors.

[0073] Specifically, in some preferred embodiments, the at least three sensors are respectively arranged on the support base 11 via corresponding vertical pressure-controlled drivers (e.g., PZT drivers arranged along the vertical direction). In response to the heating plate 13 acquiring the wafer 14 to be processed each time, the vertical pressure-controlled drivers 112 corresponding to each sensor are used to perform height compensation for leveling the wafer 14 according to the height of each sensor.

[0074] Furthermore, in the process of leveling the wafer 14 and the heating plate 13, the controller may first determine a reference height from the heights of the sensors and define the corresponding sensor as the first sensor. Afterwards, the controller may respectively determine the corresponding voltage adjustment amount according to the difference between the second heights of the remaining second sensors and the reference height. Afterwards, the controller may adjust the driving voltage of the second vertical voltage-controlled driver corresponding to each second sensor according to each voltage adjustment amount to compensate for the leveling height.

[0075] In this way, the wafer lifting mechanism provided in the first aspect of the present invention does not need to adjust the support base 11 itself, but only needs to adjust the height of the sensor to achieve leveling of the heating plate 11. Therefore, it has higher real-time performance and is more suitable for online adjustment during the lifting process.

[0076] Those skilled in the art will understand that the above-mentioned embodiments of setting the vertical pressure-controlled driver on the support seat 11 are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concepts of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit the scope of protection of the present invention.

[0077] Optionally, in other embodiments, those skilled in the art may also dispose a vertical pressure-controlled driver on each push rod 12 .

[0078] Furthermore, in some embodiments, the controller may use the minimum height as the reference height of the sensor. Specifically, the controller may define the last sensor that contacts the corresponding push rod as the first sensor, the time when the sensor contacts the corresponding push rod as the reference time t0, and the difference between the remaining second sensors and the reference height is represented by Δz i =v×(t0-t i ).

[0079] Those skilled in the art will appreciate that the above-mentioned embodiments using the minimum height as the reference height of the sensor are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concepts of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit the scope of protection of the present invention.

[0080] Optionally, in other embodiments, those skilled in the art may also select the maximum height, or any intermediate height as the reference height of the sensor.

[0081] In addition, Figure 2 In the illustrated embodiment, a pipeline extending in the vertical direction is provided inside the vertical pressure-controlled driver. The data line of the sensor reaches the bottom of the support seat 11 through the pipeline and is led out of the process chamber together with the control line of the vertical pressure-controlled driver to connect to the controller 10.

[0082] In addition, in some preferred embodiments, the above-mentioned wafer lifting mechanism provided in the first aspect of the present invention can also use a leveling unit to perform offline leveling after replacing the heating plate, and use a vertical voltage-controlled driver to perform online fine-tuning after each acquisition of the wafer 14, so as to compensate for the slight tilt of the heating plate 13 caused by factors such as the wafer 14 being not placed in the center and the uneven weight of the wafer 14, thereby further improving the processing accuracy of the wafer 14.

[0083] Specifically, a leveling unit for driving the support base 11 to tilt in multiple directions is provided on the support base 11. In response to the operation of replacing the heating plate, the controller 10 can perform leveling angle compensation on the support base 11 according to the height of each sensor via the leveling unit.

[0084] Furthermore, in the process of leveling the wafer 14 and the heating plate 13, the controller 10 can first determine the spatial coordinates of each sensor according to the height of each sensor and its installation position on the support base 11. Afterwards, the controller 10 can fit the plane equation of the plane where each sensor is located according to the spatial coordinates of each sensor, and determine the inclination angle of the plane relative to the plane where the heating plate 13 is located according to the plane equation. Afterwards, the controller 10 can drive the leveling unit according to the inclination angle to perform angle compensation for leveling the support base 11.

[0085] Please refer to the following for further reference Figure 11 to Figure 13 . Fig.11 A schematic diagram showing the spatial coordinates of a wafer lifting structure provided according to some embodiments of the present invention is shown. Fig.12 A schematic diagram of the plane coordinates of a wafer lifting structure provided according to some embodiments of the present invention is shown. Fig.13 A schematic diagram of wafer leveling according to some embodiments of the present invention is shown.

[0086] like Figure 11 to Figure 13 As shown, the wafer lifting mechanism provided by the first aspect of the present invention includes three push rods 12, and three sensors are correspondingly arranged on the support seat 11. Each push rod 12 and each sensor are arranged at an angle of 120° around the center of the heating plate 13 and the support seat 11. Here, the spatial coordinates of each sensor 111 are expressed as P1(0,-r,z1),

[0087] like Fig.12 As shown, the plane equation of the plane where each sensor is located is expressed as Ax+By+Cz+D=0, where: The inclination angle between the plane where each sensor is located and the horizontal plane where the heating plate 13 is located is expressed as

[0088] Furthermore, in some optional embodiments, the sensor is a pressure sensor, which transmits a sensing signal of contact with the corresponding ejector pin to the controller in response to the pressure being greater than a preset threshold.

[0089] In summary, the wafer lifting mechanism, semiconductor device processing device, semiconductor device processing method and computer-readable storage medium provided by the present invention can be used to adjust the centering of the wafer and the heating plate by setting an automatic return pin and a lateral pressure-controlled driver for step-by-step adjustment of the wafer position, so as to improve the efficiency and accuracy of the semiconductor device processing technology. In addition, by recording the time when each sensor contacts the corresponding ejector pin and combining the rising speed of the support seat, it can be used to level the wafer in real time and accurately during the process of controlling the wafer lifting, so as to further improve the efficiency and accuracy of the semiconductor device processing technology.

[0090] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0091] Although the controller 10 described in the above embodiment can be implemented by a combination of software and hardware. However, it is understood that the controller 10 can also be implemented in software and hardware. For hardware implementation, the controller 10 can be implemented in one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, other electronic devices for performing the above functions, or a selection combination of the above devices. For software implementation, the controller 10 can be implemented by independent software modules such as procedures and functions running on a general-purpose chip, each of which performs one or more functions and operations described herein.

[0092] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in a RAM memory, a flash memory, a ROM memory, an EPROM memory, an EEPROM memory, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor so that the processor can read and write information from / to the storage medium. In an alternative, a storage medium may be integrated into a processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and the storage medium may reside in a user terminal as discrete components.

[0093] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented as a computer program product in software, each function may be stored on or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Storage media may be any available medium that can be accessed by a computer. As an example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, disk storage or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, a server, or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of the medium. Disk and disc as used herein include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, wherein disk often reproduces data magnetically, while disc reproduces data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0094] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A wafer lifting mechanism, characterized in that: include: A support seat is arranged below the heating plate, and is provided with a plurality of support members, wherein the support members are provided with transverse pressure-controlled drivers arranged along a plurality of horizontal directions; a plurality of push rods, wherein the first ends of the push rods pass upward through the push rod through holes of the heating plate and are limited by the protrusions located at the first ends to be located above the heating plate, and the second ends of the push rods are located below the heating plate and aligned with the corresponding support members; and The controller is configured to: determine the lateral offset between the wafer and the heating plate; lift the support seat so that each of the support members contacts the second end of the corresponding push rod, and supports and drives the wafer to rise via its first end; and adjust the driving voltage of the lateral voltage-controlled driver in the corresponding direction according to the lateral offset to adjust the centering of the wafer and the heating plate.

2. The wafer lifting mechanism according to claim 1, characterized in that: The lateral voltage-controlled driver comprises: A first deformation layer is arranged along a preset X direction, and is used for deforming along the X direction according to a first driving voltage received; A second deformation layer is arranged along a preset Y direction, and is used for deforming along the Y direction according to a second driving voltage received; and The insulating layer is disposed between the first deformable layer and the second deformable layer to isolate the first driving voltage from the second driving voltage.

3. The wafer lifting mechanism according to claim 2, characterized in that: The support member also includes: A support rod connected to the support seat and lifting the lateral pressure-controlled actuator to a preset height; and The support head is installed on the support rod via the lateral pressure-controlled driver to contact and support the corresponding push rod, wherein a limiting hole is provided on the support head for inserting the second end of the push rod to prevent the push rod from lateral displacement relative to the support head.

4. The wafer lifting mechanism according to claim 2, characterized in that: The step of adjusting the driving voltage of the lateral voltage-controlled driver in a corresponding direction according to the lateral offset to adjust the centering of the wafer and the heating plate comprises: Splitting the lateral offset to obtain a first lateral displacement component along the X direction and a second lateral displacement component along the Y direction; Determining a corresponding first driving voltage and a corresponding second driving voltage according to the first lateral displacement component and the second lateral displacement component respectively; and The first driving voltage is provided to the first deformation layer, and the second driving voltage is provided to the second deformation layer, so as to adjust the centering of the wafer and the heating plate.

5. The wafer lifting mechanism according to claim 1, characterized in that: The inner wall of each of the ejector pin through holes maintains an adjustment gap with the corresponding ejector pin, and the step of adjusting the driving voltage of the lateral voltage-controlled driver in the corresponding direction according to the lateral offset to adjust the centering of the wafer and the heating plate includes: comparing the lateral offset with the size of the adjustment gap; In response to the lateral offset being smaller than the adjustment gap, determining a driving voltage of the lateral voltage-controlled driver in a corresponding direction according to the lateral offset; and In response to the lateral offset being greater than or equal to the adjustment gap, a driving voltage of the lateral voltage-controlled driver with respect to a corresponding direction is determined according to the adjustment gap.

6. The wafer lifting mechanism according to claim 5, characterized in that: The controller is also configured to: After the wafer and the heating plate are aligned, the support seat is lowered to separate each support member from the second end of the corresponding push rod, and each push rod is dropped back to place the wafer back on the upper surface of the heating plate.

7. The wafer lifting mechanism according to claim 6, characterized in that: The upper end of each of the ejector pin through holes is configured as an inwardly recessed slope structure, and / or the lower end of each of the protruding portions is configured as an inwardly protruding slope structure, so that each of the ejector pins can be automatically aligned with the corresponding ejector pin through hole after it falls back, and the step of adjusting the driving voltage of the lateral voltage-controlled driver in the corresponding direction according to the lateral offset to adjust the centering of the wafer and the heating plate also includes: In response to the lowering of the support base, re-determining the lateral offset of the wafer from the heating plate; and In response to the lateral offset being greater than a preset error threshold, the support base is lifted again, and the driving voltage of the lateral voltage-controlled driver in the corresponding direction is adjusted to perform centering adjustment between the wafer and the heating plate.

8. A semiconductor device processing device, characterized in that: include: A process chamber is provided with a heating plate for carrying and heating the wafer to perform a processing process on it; as well as The wafer lifting mechanism according to any one of claims 1 to 7 is used to lift the wafer and perform centering adjustment between the wafer and the heating plate.

9. A method for processing a semiconductor device, characterized in that: The following steps are involved: Lifting the support base of the wafer lifting mechanism according to any one of claims 1 to 7, contacting and supporting the second ends of the plurality of ejector pins via the plurality of support members thereof, so as to obtain the wafer to be processed via the first ends of the plurality of ejector pins; Determining a lateral offset between the wafer and the heating plate; According to the lateral offset, adjusting the driving voltage of the lateral voltage-controlled drivers of the plurality of support members in corresponding directions to perform centering adjustment between the wafer and the heating plate; In response to completing the centering adjustment, lowering the support seat to separate each of the support members from the second end of the corresponding ejector pin, and causing each of the ejector pins to fall back to place the wafer back on the upper surface of the heating plate; as well as The wafer is heated via the heating plate to process the wafer.

10. The processing method according to claim 9, characterized in that: The step of adjusting the driving voltage of the lateral voltage-controlled drivers of the plurality of support members in corresponding directions according to the lateral offset to adjust the centering of the wafer and the heating plate comprises: comparing the lateral offset with the size of the adjustment gap; and In response to the lateral offset being smaller than the adjustment gap, a driving voltage of the lateral voltage-controlled driver with respect to a corresponding direction is determined according to the lateral offset.

11. The processing method according to claim 10, characterized in that: The step of adjusting the driving voltage of the lateral voltage-controlled drivers of the plurality of support members in corresponding directions according to the lateral offset to adjust the centering of the wafer and the heating plate also includes: In response to the lateral offset being greater than or equal to the adjustment gap, determining the driving voltage of the lateral voltage-controlled driver in a corresponding direction according to the adjustment gap, so as to perform a first step of centering adjustment between the wafer and the heating plate; In response to the completion of the first step of centering adjustment, the support seat is lowered to separate each support member from the second end of the corresponding ejector pin, and each ejector pin is dropped back to place the wafer back on the upper surface of the heating plate, and each ejector pin is automatically aligned with the corresponding ejector pin through hole via the ramp structure; re-determining the lateral offset between the wafer and the heating plate; and In response to the lateral offset being greater than a preset error threshold, the support base is lifted again, and the driving voltage of the lateral voltage-controlled driver in the corresponding direction is adjusted to perform a second step of centering adjustment between the wafer and the heating plate.

12. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the semiconductor device processing method according to any one of claims 9 to 11 is implemented.

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